JP4919606B2 - Abrasive cloth and method for producing the abrasive cloth - Google Patents
Abrasive cloth and method for producing the abrasive cloth Download PDFInfo
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- JP4919606B2 JP4919606B2 JP2005047589A JP2005047589A JP4919606B2 JP 4919606 B2 JP4919606 B2 JP 4919606B2 JP 2005047589 A JP2005047589 A JP 2005047589A JP 2005047589 A JP2005047589 A JP 2005047589A JP 4919606 B2 JP4919606 B2 JP 4919606B2
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- 239000004744 fabric Substances 0.000 title claims description 83
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000005498 polishing Methods 0.000 claims description 92
- 238000010438 heat treatment Methods 0.000 claims description 51
- 238000011282 treatment Methods 0.000 claims description 27
- 239000000463 material Substances 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 7
- 239000004745 nonwoven fabric Substances 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 3
- 238000011284 combination treatment Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 27
- 239000004065 semiconductor Substances 0.000 description 19
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 14
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 12
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 9
- 239000011148 porous material Substances 0.000 description 8
- 230000003746 surface roughness Effects 0.000 description 8
- 238000005470 impregnation Methods 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000006073 displacement reaction Methods 0.000 description 6
- 230000008569 process Effects 0.000 description 5
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- YMWUJEATGCHHMB-UHFFFAOYSA-N Dichloromethane Chemical compound ClCCl YMWUJEATGCHHMB-UHFFFAOYSA-N 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 239000013067 intermediate product Substances 0.000 description 3
- 230000000704 physical effect Effects 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 229920000728 polyester Polymers 0.000 description 3
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- 229920001410 Microfiber Polymers 0.000 description 2
- 239000004721 Polyphenylene oxide Substances 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- KIQKWYUGPPFMBV-UHFFFAOYSA-N diisocyanatomethane Chemical compound O=C=NCN=C=O KIQKWYUGPPFMBV-UHFFFAOYSA-N 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000003658 microfiber Substances 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000015271 coagulation Effects 0.000 description 1
- 238000005345 coagulation Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- DYFXGORUJGZJCA-UHFFFAOYSA-N phenylmethanediamine Chemical compound NC(N)C1=CC=CC=C1 DYFXGORUJGZJCA-UHFFFAOYSA-N 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
本発明は、シリコン、ガリウム砒素、インジウム燐、その他の半導体基板、半導体ウエハ、各種基板、ガラス、ＬＣＤ、ディスクなど、各種の研磨対象物の表面を研磨する際に用いる研磨布とその製造方法に関するものである。 The present invention relates to a polishing cloth used for polishing the surface of various objects to be polished such as silicon, gallium arsenide, indium phosphide, other semiconductor substrates, semiconductor wafers, various substrates, glass, LCDs, disks, and the like, and a method for manufacturing the same. Is.
研磨対象物の一つである半導体ウエハにおいて、その一般的な研磨工程では、研磨布を下定盤側に保持し研磨対象物である半導体ウエハを上定盤側に保持し研磨布と半導体ウエハとの両者間に研磨スラリーを供給しつつ当該両者を加圧した状態で相対摺動させることにより行われている（特許文献１参照）。 In a semiconductor wafer that is one of the objects to be polished, in a general polishing process, the polishing cloth is held on the lower surface plate side, and the semiconductor wafer that is the object to be polished is held on the upper surface plate side. This is carried out by supplying a polishing slurry between the two and sliding them relative to each other in a pressurized state (see Patent Document 1).
近年の半導体デバイスの一層の高集積化に伴ない、無欠陥の積層配線の構築および歩留まり向上のために、その基礎となる半導体ウエハの高平坦性の要求が益々増大してきている。このような要求の増大化に対しては半導体ウエハの研磨工程における半導体ウエハのロールオフの低減が重要な課題となってきている。 With the further higher integration of semiconductor devices in recent years, there has been an increasing demand for high flatness of a semiconductor wafer serving as a basis for the construction of defect-free multilayer wiring and the improvement of yield. For such an increase in demand, reduction of roll-off of the semiconductor wafer in the semiconductor wafer polishing process has become an important issue.
周知されるように、ロールオフは、研磨工程時において半導体ウエハが研磨布の粘弾性により当該研磨布表面に沈み込んだ状態で研磨されたときに半導体ウエハ周辺部がふちだれする現象のことである。不織布タイプの研磨布は、半導体ウエハの研磨に多用されてきており、このロールオフを抑制し、当該ロールオフに起因した研磨品質の低下を抑制することが必要となっている。
本発明は、ロールオフを抑制し当該ロールオフに起因した研磨品質の低下を抑制することを解決すべき課題としている。 This invention makes it the problem which should be solved to suppress roll-off and to suppress the fall of the polishing quality resulting from the said roll-off.
本発明を完成するために、本出願人は、ロールオフの抑制に関して鋭意研究していた。不織布タイプの研磨布においては、その表面に多数の微小な繊維が起き上がった状態（毛羽立ちした状態）で不規則にかつ比較的高密度に層状（毛羽層と称する）に存在している。このような毛羽層は、研磨布の厚み方向での粘弾性特性や圧縮／回復の変位特性に影響を及ぼすものである。半導体ウエハが研磨布に対してロールオフした状態で研磨されている場合、研磨布表面の毛羽層は半導体ウエハから加圧される前は起立状態にあり、研磨布により加圧されている状態では倒伏状態にあり、加圧を解除されると、起立状態に回復する現象を発見した。このような現象により、半導体ウエハは、研磨布で研磨されるに際して、毛羽層が起立状態から倒伏状態に変化するために、ロールオフが増大し、このことが、半導体ウエハの研磨品質に大きく影響を及ぼしていることを見出すことができて、以下の本発明を完成することができるに至ったのである。 In order to complete the present invention, the applicant has been diligently studying the suppression of roll-off. In a non-woven fabric type abrasive cloth, a large number of minute fibers are raised on the surface (fuzzy state), and are present irregularly and relatively densely in a layered form (referred to as a fluff layer). Such a fluff layer affects the viscoelastic characteristics in the thickness direction of the polishing pad and the displacement characteristics of compression / recovery. When the semiconductor wafer is polished in a roll-off state with respect to the polishing cloth, the fluff layer on the surface of the polishing cloth is in an upright state before being pressed from the semiconductor wafer, I found a phenomenon that when I was in a lying state and released pressure, it recovered to a standing state. Due to this phenomenon, when a semiconductor wafer is polished with a polishing cloth, the fluff layer changes from a standing state to a lying state, and therefore roll-off increases, which greatly affects the polishing quality of the semiconductor wafer. As a result, the following invention can be completed.
（１）本発明による研磨布は、不織布研磨布用の基材表面の毛羽層が、該毛羽層単独で倒伏した状態に処理されていることを特徴とするものである。 (1) The polishing cloth according to the present invention is characterized in that the fluff layer on the surface of the base material for the nonwoven cloth polishing cloth is treated so as to fall down with the fluff layer alone .
上記処理の好ましい態様の一つは加圧処理である。 One preferred embodiment of the above treatment is a pressure treatment.
上記処理の好ましい態様の一つは加圧と加熱の併用処理である。 One of the preferred embodiments of the above treatment is a combined treatment of pressurization and heating.
本発明の研磨布によれば、毛羽層が倒伏状態に処理されているから、その起立状態と倒伏状態との高さの差の分、研磨対象物である例えば半導体ウエハの研磨布に対するロールオフを抑制することができ、研磨品質を向上することができるようになった。 According to the polishing cloth of the present invention, since the fluff layer is processed in the lying down state, the amount of the height difference between the standing state and the lying down state corresponds to the roll-off of the polishing object such as a semiconductor wafer against the polishing cloth. As a result, the polishing quality can be improved.
本発明の好ましい実施態様は、毛羽層が倒伏状態となっていることに加えて、その倒伏状態が基材への加圧により処理されていることである。加圧により倒伏状態に処理されていることにより、毛羽層を含め、基材全体が圧縮変形されにくく硬質化するために、毛羽層の倒伏状態と相まって、より一層、ロールオフを抑制することが可能となり、半導体ウエハ表面の高平坦研磨に大きく寄与することができる。 In a preferred embodiment of the present invention, in addition to the fluff layer being in a collapsed state, the collapsed state is treated by pressurizing the substrate. Since the entire base material, including the fluff layer, is hard to be compressed and deformed and hardened by being pressurized, it is possible to further suppress roll-off in combination with the fluff layer's lying state. This can greatly contribute to the highly flat polishing of the semiconductor wafer surface.
毛羽層の倒伏状態化が加圧により行われていると、毛羽層の倒伏状態によるロールオフの抑制に、さらに、基材の圧縮化により、ロールオフが抑制されるようになっている。換言すれば、本発明では、単に、基材を加圧圧縮して硬質化したものではなく、毛羽層を倒伏状態とすることを基材を加圧して行ったものであるから、半導体ウエハを研磨するときに半導体ウエハが研磨布にロールオフされにくくなり、ロールオフによる研磨品質の低下が抑制され、結果として、研磨品質が向上するものとなる。 When the fluff layer is in a collapsed state by pressurization, the roll-off is suppressed by suppressing the roll-off due to the fluff layer's collapsed state, and further by compressing the base material. In other words, in the present invention, since the base material is not simply hardened by pressing and compressing, but the fluff layer is put into a lying state by pressing the base material. When polishing, the semiconductor wafer is hardly rolled off to the polishing cloth, and the deterioration of the polishing quality due to the roll-off is suppressed, and as a result, the polishing quality is improved.
この場合、本発明のさらに好ましい実施形態として、毛羽層が加圧と加熱の併用により倒伏状態に処理される。 In this case, as a further preferred embodiment of the present invention, the fluff layer is treated in a lying state by a combination of pressurization and heating.
（２）本発明による研磨布の製造方法は、不織布研磨布用の基材を樹脂溶液に含浸してから加熱乾燥し、その加熱乾燥後に前記基材表面の毛羽層を、該毛羽層単独で倒伏した状態に加圧処理することを特徴とするものである。 (2) A method of manufacturing a polishing cloth according to the present invention, the substrate for non-woven abrasive cloth was heated and dried after impregnation with the resin solution, the fluff layer of the substrate surface after the heat drying, in fluff layer alone It is characterized by pressurizing in a lying state.
本発明の製造方法によれば、研磨布表面に樹脂溶融という物性変化を生じないので、表面側ポアが閉塞されずに済み、そのため、加圧処理後に研削処理を実施しなくて済み、加圧処理をした研磨布表面を、被研磨対象物に対する研磨面とすることができる構造を有するので、研磨布製造工程を簡略にすることができる。 According to the manufacturing method of the present invention, since the physical property change such as resin melting does not occur on the surface of the polishing cloth, the surface side pore does not need to be blocked. Therefore, it is not necessary to perform the grinding treatment after the pressure treatment. Since the surface of the processed polishing cloth can be used as a polishing surface for the object to be polished, the polishing cloth manufacturing process can be simplified.
本発明の好ましい実施態様として、加圧処理と加熱処理とを併用することである。 As a preferred embodiment of the present invention, a pressure treatment and a heat treatment are used in combination.
本発明の製造方法においては、加圧処理は１０〜８０ｋｇ／ｃｍ2の範囲で行うことが望ましい。１０ｋｇ／ｃｍ2未満の加圧では、倒伏状態の毛羽層が起立する率が高くなり、毛羽層を倒伏状態とする効果が低下する。一方、８０ｋｇ／ｃｍ2を超える加圧では、研磨布の厚み内のポアが潰される率が高くなって毛羽層の層厚みが大幅に減少し、弾力性を失う。 In the production method of the present invention, the pressure treatment is desirably performed in the range of 10 to 80 kg / cm 2 . When the pressure is less than 10 kg / cm 2, the rate of standing the fluff layer in the lying state increases, and the effect of bringing the fluff layer into the lying state decreases. On the other hand, when the pressure exceeds 80 kg / cm 2 , the rate of crushing the pores in the thickness of the polishing cloth is increased, the layer thickness of the fluff layer is significantly reduced, and elasticity is lost.
また、上記の製造方法における加圧処理は、加熱しながら行うことが好ましい。加熱を伴う加圧処理では、毛羽層は、熱の作用で倒伏状態に変形されて、起立状態となることを確実に防止することができる。このように加熱を伴う加圧処理が施された研磨布は、表面状態の改善がさらに進むので、一層ロールオフの低減と、ウエハ表面の平坦化に役立つ。 Moreover, it is preferable to perform the pressurization process in said manufacturing method, heating. In the pressurization process with heating, the fluff layer can be reliably prevented from being deformed into a lying state by the action of heat and becoming in an upright state. The polishing cloth subjected to the pressure treatment with heating in this way is further improved in the surface state, and thus helps to further reduce roll-off and planarize the wafer surface.
この場合、加熱は、基材に含浸される樹脂溶液の樹脂の軟化温度よりも低い温度、具体的には、１３０℃以下の温度で行うことが望ましい。樹脂の軟化温度以上の加熱温度では、研磨布の表面の樹脂が軟化、溶融してポアの開口を閉塞することになるので、この加熱の後には、ポアを開口するために、表面を研削する必要が生じる。 In this case, the heating is desirably performed at a temperature lower than the softening temperature of the resin of the resin solution impregnated in the base material, specifically, a temperature of 130 ° C. or lower. At a heating temperature equal to or higher than the softening temperature of the resin, the resin on the surface of the polishing cloth is softened and melted to close the opening of the pore. Therefore, after this heating, the surface is ground to open the pore. Need arises.
前記の加熱は、より好ましくは、３０℃〜１２０℃の範囲で行う。加熱処理の温度がこの範囲内であれば、表面状態の改善がより確実に達成できるばかりでなく、処理に要する時間が比較的短くて済む。 The heating is more preferably performed in the range of 30 ° C to 120 ° C. If the temperature of the heat treatment is within this range, not only can the surface state be improved more reliably, but the time required for the treatment can be relatively short.
上記のように加熱を伴う加圧処理、または加熱を伴わない加圧処理は、平板プレスのように、平坦なプレス面を有するプレス部材で行うことが好ましい。平板プレスのようなプレス部材では、プレス面全体が各部均等の圧力で研磨布に圧接するので、一度に研磨布の広い面積を一定の加圧力で加圧することができ、毛羽層が倒伏した、所望通りの表面状態の研磨布を、容易に製造することができる。 As described above, the pressure treatment with heating or the pressure treatment without heating is preferably performed with a press member having a flat press surface like a flat plate press. In a press member such as a flat plate press, the entire press surface is pressed against the polishing cloth with equal pressure on each part. A polishing cloth having a desired surface condition can be easily produced.
基材に含浸される樹脂溶液は、ウレタン樹脂溶液であることが好ましい。ウレタン樹脂を用いることによって、研磨布には、ウエハに研磨傷を発生させない適度な硬度と弾性とを与えることができる。 The resin solution impregnated in the substrate is preferably a urethane resin solution. By using the urethane resin, it is possible to give the polishing cloth appropriate hardness and elasticity that do not cause polishing scratches on the wafer.
本発明によれば、ロールオフを抑制して研磨対象物の研磨品質を向上することができる。 According to the present invention, it is possible to suppress the roll-off and improve the polishing quality of the object to be polished.
以下、添付した図面を参照して本発明の実施の形態に係る研磨布とその製造方法を詳細に説明する。図１は、研磨布の製造方法の工程図、図２は、製造方法内の加圧加熱工程図である。 Hereinafter, an abrasive cloth and a manufacturing method thereof according to an embodiment of the present invention will be described in detail with reference to the accompanying drawings. FIG. 1 is a process diagram of a method for producing an abrasive cloth, and FIG. 2 is a pressure heating process diagram in the production method.
図１に示すように、工程Ｓ１では、先ず、湿式のウレタン樹脂を、ジメチルホルムアミド（ＤＭＦ）などの溶媒に混合溶解させて、１次含浸溶液としてのウレタン樹脂溶液を作製する。工程Ｓ２では、フェルト等の不織布を用意し、これを上記ウレタン樹脂溶液に１次含浸する。 As shown in FIG. 1, in step S1, first, a wet urethane resin is mixed and dissolved in a solvent such as dimethylformamide (DMF) to prepare a urethane resin solution as a primary impregnation solution. In step S2, a nonwoven fabric such as felt is prepared, and this is primarily impregnated into the urethane resin solution.
次に、凝固液中でウレタン樹脂を湿式凝固させ（工程Ｓ３）、洗浄して溶媒を除去した（工程Ｓ４）後、乾燥し（工程Ｓ５）、その後、表裏面を平面研削(バフ)する（工程Ｓ６）ことで、中間製品である多孔質の基材を得る。 Next, the urethane resin is wet-solidified in the coagulation liquid (step S3), washed to remove the solvent (step S4), dried (step S5), and then the front and back surfaces are ground (buffed) ( By step S6), a porous base material which is an intermediate product is obtained.
１次含浸溶液となるウレタン樹脂としては、ポリエステル系あるいはポリエーテル系、ポリカーボネート系など、従来の研磨布に含まれるのと同様のウレタン樹脂を用いることができ、異なる種類のウレタン樹脂をブレンドしてもよい。 As the urethane resin used as the primary impregnation solution, the same urethane resin as that contained in a conventional polishing cloth such as polyester, polyether or polycarbonate can be used. Also good.
不織布としては、例えば、ポリアミド系、ポリエステル系等の不織布を用いることができる。 As the nonwoven fabric, for example, a polyamide-based, polyester-based or the like nonwoven fabric can be used.
ウレタン樹脂を溶解させる溶媒としては、上述のジメチルホルムアミド（ＤＭＦ）の他、例えば、ジメチルスルホキシド、テトラヒドロフラン、ジメチルアセトアミド等の従来と同様の溶媒を用いることができる。 As a solvent for dissolving the urethane resin, in addition to the above-mentioned dimethylformamide (DMF), for example, a conventional solvent such as dimethylsulfoxide, tetrahydrofuran, dimethylacetamide and the like can be used.
上記のように、中間製品である基材が得られると、次に、乾式のウレタン樹脂をメチルエチルケトン（ＭＥＫ）などの溶媒に混合溶解させ（工程Ｓ７）、さらに硬化剤を添加して２次含浸溶液としてのウレタン樹脂溶液を作製し、このウレタン樹脂溶液に、上述のようにして得られた中間製品である基材を２次含浸し（工程Ｓ８）、こののち、加熱乾燥させて溶媒を除去するとともに、ウレタン樹脂を硬化させる（工程Ｓ９）。 As described above, once the intermediate product is obtained, the dry urethane resin is mixed and dissolved in a solvent such as methyl ethyl ketone (MEK) (step S7), and a curing agent is further added to perform secondary impregnation. A urethane resin solution is prepared as a solution, and the base material, which is an intermediate product obtained as described above, is secondarily impregnated in this urethane resin solution (step S8), and then the solvent is removed by heating and drying. In addition, the urethane resin is cured (step S9).
この場合、２次含浸溶液であるウレタン樹脂溶液としては、例えば、ポリエステル、あるいはポリエーテル系のＭＤＩ(メチレンジイソシアネート)あるいはＴＤＩ(トリレンジイソシアネート)末端を持つウレタンプレポリマー単体に、３，３’ジクロロ−４，４’ジアミノフェニルメタン等の有機アミン硬化剤を加えて、メチルエチルケトン等の溶剤に混合溶解させたものが挙げられる。 In this case, the urethane resin solution as the secondary impregnation solution may be, for example, a polyester or polyether-based urethane prepolymer having MDI (methylene diisocyanate) or TDI (tolylene diisocyanate) ends, and 3,3 ′ dichloromethane. An organic amine curing agent such as -4,4'diaminophenylmethane is added and mixed and dissolved in a solvent such as methyl ethyl ketone.
次に、２次含浸して加熱乾燥した基材の表面状態を改善するために、この実施の形態では、加圧および加熱の処理を行う（工程１０）。この加圧および加熱の処理は、図２に示すように、２次含浸して加熱乾燥した基材１を一対の平板状のプレス部材２，３で挟んで行う。各プレス部材２，３は、それぞれヒータ４，５を内蔵しており、これらのヒータ４，５の発熱により、挟まれた基材１を加熱することができる。 Next, in order to improve the surface state of the base material that has been secondarily impregnated and heat-dried, in this embodiment, pressure and heat treatment are performed (step 10). As shown in FIG. 2, this pressurizing and heating treatment is performed by sandwiching the base material 1 that has been secondarily impregnated and heat-dried between a pair of flat plate-like press members 2 and 3. Each press member 2, 3 has a built-in heater 4, 5, and the sandwiched substrate 1 can be heated by the heat generated by these heaters 4, 5.
この工程Ｓ１０での加圧加熱処理は、例えば、５０ｋｇ／ｃｍ2の加圧力、１００℃の温度で、約５分間行うが、これら条件は適宜変更可能である。 The pressure heat treatment in this step S10 is performed for about 5 minutes at a pressure of 50 kg / cm 2 and a temperature of 100 ° C., for example, but these conditions can be changed as appropriate.
この工程Ｓ１０での表面状態の改善とは、研磨布の表面を、ポアの開口が閉塞されずに、毛羽層を、該毛羽層単独で、すなわち、毛羽層のみで倒伏状態にすることで、このことを考慮すると、工程Ｓ１０の加圧加熱処理において、加圧は、１０〜８０ｋｇ／ｃｍ2の範囲で行うのが望ましい。また、加熱は、常温より高く、かつ、基材に含浸される樹脂溶液の樹脂の軟化温度よりも低い温度、具体的には、１５℃〜１３０℃の範囲の温度で行うのが望ましく、より望ましくは、３０℃〜１２０℃の範囲で行う。 The improvement of the surface state in this step S10 is that the surface of the polishing cloth is not blocked by the opening of the pore , and the fluff layer is in a lying state only with the fluff layer, that is, only the fluff layer . In consideration of this, it is desirable that the pressurization is performed in the range of 10 to 80 kg / cm 2 in the pressurization and heat treatment in step S10. Further, the heating is desirably performed at a temperature higher than normal temperature and lower than the softening temperature of the resin of the resin solution impregnated in the substrate, specifically, a temperature in the range of 15 ° C to 130 ° C. Desirably, it is performed in the range of 30 ° C to 120 ° C.
加圧加熱の時間は、加圧力の大きさや加熱温度の高低、基材等の材質に応じて変わるが、表面状態を安定させるには、１分以上とすることが望ましい。 The pressure heating time varies depending on the magnitude of the applied pressure, the level of the heating temperature, the material of the base material, etc., but is preferably 1 minute or longer in order to stabilize the surface state.
上記の加圧および加熱の工程Ｓ１０を経て、所定の厚みの最終製品である研磨布が得られる。本実施形態では、工程Ｓ１０が最終工程であって、該工程Ｓ１０で加圧加熱処理された表面がそのまま、半導体ウエハに対する研磨面となる。 A polishing cloth which is a final product having a predetermined thickness is obtained through the above-described pressurization and heating step S10. In the present embodiment, the step S10 is the final step, and the surface subjected to the pressure heat treatment in the step S10 is directly used as a polishing surface for the semiconductor wafer.
次に、上記製造方法により得られた研磨布の性状、特性を表１と、図３ないし図７の各図とにより説明する。 Next, the properties and characteristics of the polishing cloth obtained by the above manufacturing method will be described with reference to Table 1 and each of FIGS.
表１は、研磨布の物性を示すものである。同一の材料で構成された研磨布であって、上述のように加圧および加熱の処理を行ったものと、上記の加圧加熱処理を行っていないものとについて、表面粗さ等の物性を比較して示している。なお、加圧および加熱の処理の条件は、５０ｋｇ／ｃｍ2の加圧、１００℃の加熱である。 Table 1 shows the physical properties of the polishing cloth. A polishing cloth made of the same material, which has been subjected to pressure and heating treatments as described above, and those which have not been subjected to the above pressure and heat treatment, have physical properties such as surface roughness. Shown in comparison. The conditions for the pressurization and heating are 50 kg / cm 2 pressurization and 100 ° C. heating.
測定結果によれば、加圧加熱処理が未処理である研磨布に対して、処理済みの研磨布の表面粗さは、約２０％低くなっており、圧縮率は、約１０％低く、厚みは若干減少している。 According to the measurement results, the surface roughness of the treated polishing cloth is about 20% lower, the compression ratio is about 10% lower than the thickness of the polishing cloth that has not been subjected to pressure heat treatment. Has decreased slightly.
これは、加圧および加熱の処理により、研磨布表面の毛羽層が倒伏状態とされ、毛羽層を構成する微小繊維からなる、圧縮変形しやすい層が極めて薄くなったため、と考えられ、その様子を示すと、図３、図４および図５の通りである。 This is thought to be because the fluff layer on the surface of the polishing cloth was put into a lying state by the treatment of pressure and heating, and the layer easily formed by compressive deformation consisting of microfibers constituting the fluff layer became extremely thin. Is as shown in FIG. 3, FIG. 4 and FIG.
図３は、研磨布の表面の顕微鏡写真で、（Ａ）は、加圧加熱処理を施していない研磨布の表面を、（Ｂ）は、加圧加熱処理を施した研磨布の表面を、それぞれ倍率５０で示している。図４は、研磨布の断面の顕微鏡写真で、（Ａ）は、処理を施していない研磨布の断面を、（Ｂ）は、処理を施した研磨布の断面を、それぞれ倍率５０で示している。図５は、研磨布の断面を模式的に示す図で、（Ａ）は、処理を施していない研磨布の断面を、（Ｂ）は、処理を施した研磨布の断面を、それぞれ示している。 FIG. 3 is a photomicrograph of the surface of the polishing cloth, (A) is the surface of the polishing cloth that has not been subjected to pressure and heat treatment, (B) is the surface of the polishing cloth that has been subjected to pressure and heat treatment, Each is shown at a magnification of 50. 4A and 4B are micrographs of a cross-section of the polishing cloth. FIG. 4A shows a cross-section of the untreated abrasive cloth, and FIG. 4B shows a cross-section of the treated abrasive cloth at a magnification of 50, respectively. Yes. FIG. 5 is a diagram schematically showing a cross section of the polishing cloth, (A) shows a cross section of the untreated polishing cloth, and (B) shows a cross section of the treated polishing cloth. Yes.
図３および図４の各（Ａ）の写真において、研磨布の表面には多数の微小繊維が突出しているが、これらの毛羽層は、（Ｂ）の写真においては、研磨布表面に沿って倒伏状態とされて、表面は、凹凸が少ない状態となっているのが分かる。また、研磨布の表面側では、加圧加熱処理が未処理でも処理済みでも同じように、多数のポアが開口しており、処理済みでも表面側のポアの状態には、ほとんど変化がないのが分かる。これらの様子を、分かりやすく模式的に示したのが図５である。図５において、符号１は、２次含浸して加熱乾燥した基材を示し、１１は毛羽層を構成する微小な繊維、１２はポアを、それぞれ示している。 In each of the photographs (A) in FIG. 3 and FIG. 4, a large number of microfibers protrude from the surface of the polishing cloth. These fluff layers are along the surface of the polishing cloth in the photograph (B). It can be seen that the surface is in a state of few depressions and bumps. In addition, on the surface side of the polishing cloth, a large number of pores are opened as in the case where the pressure heat treatment is untreated or treated, and there is almost no change in the state of the pores on the surface side even after the treatment. I understand. FIG. 5 schematically shows these states in an easy-to-understand manner. In FIG. 5, the code | symbol 1 shows the base material which carried out secondary impregnation and heat-dried, 11 has shown the fine fiber which comprises a fluff layer, and 12 has shown the pore, respectively.
次に、図６は、研磨布の圧縮荷重に対する変位量を示す線図で、縦軸に荷重（Ｎ）をとり、横軸に変位量（ｍｍ）をとっている。加圧加熱処理を施していない研磨布と、加圧加熱処理を施した研磨布とのそれぞれについて、厚み方向に２０μｍの変位を与えるのに要する荷重を測定して、その結果を図６に示している。 Next, FIG. 6 is a diagram showing the amount of displacement of the polishing cloth against the compressive load, with the load (N) on the vertical axis and the amount of displacement (mm) on the horizontal axis. For each of the polishing cloth not subjected to pressure heat treatment and the polishing cloth subjected to pressure heat treatment, the load required to give a displacement of 20 μm in the thickness direction was measured, and the result is shown in FIG. ing.
図６に示す測定結果からは、厚み方向に同じ量の変位を与えるのに、処理を施したものは、処理を施さないものより、約１０％大きい荷重を必要とし、圧縮変形のしにくさ、硬度が増しているのが分かる。 From the measurement results shown in FIG. 6, it is necessary to apply a load about 10% larger than that without treatment to give the same amount of displacement in the thickness direction. It can be seen that the hardness has increased.
図７は、研磨布を用いて研磨したウエハの表面粗さ等の表面状態を示す図である。この図では、加圧加熱処理を施していない研磨布を用いた場合を規準として、加圧加熱処理を施した研磨布を用いた場合のウエハの表面粗さ（Ｒａ）と、ウエハ外周部分のＳＦＱＲ（Ｓｉｔｅ Ｆｒｏｎｔ Ｌｅａｓｔ ｓＱｕａｒｅｓ Ｒａｎｇｅ）とを、それぞれ相対値で示している。ＳＦＱＲは、ここでは、ウエハのロールオフの程度を示す数値として採用している。 FIG. 7 is a diagram illustrating a surface state such as a surface roughness of a wafer polished using a polishing cloth. In this figure, the surface roughness (Ra) of the wafer when the polishing cloth subjected to the pressure heating treatment is used, and the outer peripheral portion of the wafer, using the polishing cloth not subjected to the pressure heating treatment as a standard, are used. SFQR (Site Front Last sQuares Range) is shown as a relative value. SFQR is adopted here as a numerical value indicating the degree of wafer roll-off.
図７に示す測定結果からは、加圧加熱処理を施した研磨布を用いると、同処理をしていない研磨布を用いた場合に比べ、ウエハの表面粗さが約２０％低減されるとともに、ウエハ外周の平坦度（ＳＦＱＲ）が約４０％改善されており、ＳＦＱＲの改善で、ロールオフが減少していることが分かる。 From the measurement results shown in FIG. 7, using a polishing cloth subjected to pressure and heat treatment reduces the surface roughness of the wafer by about 20% compared to using a polishing cloth not subjected to the same treatment. The flatness (SFQR) of the wafer outer periphery is improved by about 40%, and it can be seen that the roll-off is reduced by the improvement of SFQR.
これは、研磨布表面の毛羽が寝かされて、毛羽層が極めて薄くなっているため、ウエハ外周での研磨量が減少し、ロールオフが減少したためと考えられる。また、研磨布の厚みが減少し、圧縮変形のしにくさ、硬質度が増すことで、研磨レートが上がり、その結果、表面粗さが小さくなったものと考えられる。 This is presumably because the fluff layer on the surface of the polishing cloth was laid down and the fluff layer was extremely thin, so that the polishing amount on the outer periphery of the wafer decreased and the roll-off decreased. In addition, it is considered that the polishing rate is increased by reducing the thickness of the polishing cloth, making it difficult to compress and deforming, and increasing the hardness, resulting in a reduction in surface roughness.
(他の実施の形態)
上述の実施の形態では、平板状のプレス部材を用いて加圧加熱処理を行ったけれども、一対の加熱可能のロールにより、加圧、加熱するようにしてもよい。また、上述の実施の形態では、基材の表裏両面を加熱したが、研磨面となる表面側のみを加熱してもよい。
(Other embodiments)
In the above-described embodiment, the pressure heating process is performed using a flat plate-shaped press member. However, pressure and heating may be performed by a pair of heatable rolls. Moreover, in the above-mentioned embodiment, although the front and back both surfaces of the base material were heated, you may heat only the surface side used as a grinding | polishing surface.
Ｓ１０ 加圧加熱工程
１ 基材（２次含浸済み）
２，３ プレス部材
S10 Pressure heating process 1 Base material (secondary impregnation completed)
2,3 Press members
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