JP4922752B2 - Perforated support plate - Google Patents
Perforated support plate Download PDFInfo
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- JP4922752B2 JP4922752B2 JP2006355508A JP2006355508A JP4922752B2 JP 4922752 B2 JP4922752 B2 JP 4922752B2 JP 2006355508 A JP2006355508 A JP 2006355508A JP 2006355508 A JP2006355508 A JP 2006355508A JP 4922752 B2 JP4922752 B2 JP 4922752B2
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- support plate
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- perforated support
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
- H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
- H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
- H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P72/04—Apparatus for manufacture or treatment
- H10P72/0442—Apparatus for placing on an insulating substrate, e.g. tape
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1062—Prior to assembly
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/17—Surface bonding means and/or assemblymeans with work feeding or handling means
- Y10T156/1798—Surface bonding means and/or assemblymeans with work feeding or handling means with liquid adhesive or adhesive activator applying means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49998—Work holding
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Packaging Frangible Articles (AREA)
Description
本発明は、ウエハを支持するためのサポートプレートに関し、特に、貫通孔のあるサポートプレート(本明細書において「孔あきサポートプレート」と呼ぶことにする)に関する。 The present invention relates to a support plate for supporting a wafer, and more particularly to a support plate having a through hole (hereinafter referred to as a “perforated support plate”).
近年、ICチップの集積化・小パッケージ化の要求が厳しくなるにつれ、ウエハを薄化する開発が注目されている。ウエハはある程度薄化されると、面強度の低下に伴い面全体に撓みが発生し、取り扱う際に他の支持部材によるサポートが必要になる。そのため、ある程度薄化される予定のウエハは、予め上記支持部材としてのガラス製又は鉄−ニッケル合金製等のサポートプレートを貼り付けて面強度を補強してから取り扱われる。ウエハに対するサポートプレートの貼り合わせは、ウエハとサポートプレートの間に粘着性を有する物質(例えば接着剤等)を介在させることにより行われる。また、ウエハからのサポートプレートの剥離は、上記物質を溶解液で溶かすことにより行われる。この溶解液は、ウエハとサポートプレートとが溶解液中に浸けられることにより上記物質へ導かれる。 In recent years, as the demand for integration and small packaging of IC chips becomes strict, development for thinning wafers has attracted attention. When the wafer is thinned to some extent, the entire surface is warped as the surface strength is reduced, and support by another support member is required when handling the wafer. For this reason, a wafer to be thinned to some extent is handled after a support plate made of glass or iron-nickel alloy or the like as the support member is attached in advance to reinforce the surface strength. Bonding of the support plate to the wafer is performed by interposing an adhesive substance (for example, an adhesive) between the wafer and the support plate. The support plate is peeled from the wafer by dissolving the substance with a solution. This solution is guided to the substance by immersing the wafer and the support plate in the solution.
昨今では、上記物質に短時間で溶解液を反応させるために、上記サポートプレートとして、溶解液をウエハとの間に導く多数の微小な貫通孔をサポートプレートの厚み方向に設けたもの即ち孔あきサポートプレートが広く使用されている。この貫通孔は、また特にガラス製のサポートプレートにおいて、後に貫通できるように一部だけガラス物質を残し、未貫通状態にした構造のものもある。このような多数の貫通孔は、ウエハを貼り合わせる全範囲に渡って略均等に高い密度でサポートプレートに設けられている。 Nowadays, in order to react the solution with the substance in a short time, the support plate is provided with a number of minute through holes in the thickness direction of the support plate that lead the solution to the wafer. Support plates are widely used. In some cases, the through-holes have a structure in which a glass substance is left in a non-penetrated state so that it can be penetrated later, particularly in a glass support plate. Such a large number of through holes are provided in the support plate at a substantially uniform high density over the entire range where the wafers are bonded together.
なお、貫通孔を備えた鉄−ニッケル合金製のサポートプレートの構成については、特許文献1に開示されている。
薄化されるウエハの面強度を補強するため、ガラス製のサポートプレートにおいては0.7mm厚のものが使用されている。
上記0.7mm厚のガラス製のサポートプレートであって、溶解液を通すための多数の貫通孔が空いているものにおいては、貫通孔の全ては、孔あきサポートプレートのエッジとその近傍領域とを残す略全ての領域に、高い密度で均等に設けられている。そのため、この貫通孔を通じて溶解液がウエハとの貼り合わせ面全体に効率よく導かれるようになり、ウエハと孔あきサポートプレートの間に介在させた粘着性を有する物質をすばやく反応させて、ウエハと孔あきサポートプレートとを短時間で剥離することが可能になる。
In order to reinforce the surface strength of the wafer to be thinned, a glass support plate having a thickness of 0.7 mm is used.
In the 0.7 mm-thick glass support plate having a large number of through-holes through which the solution is passed, all of the through-holes are formed on the edge of the perforated support plate and the vicinity thereof. Are substantially uniformly provided at a high density in almost all regions where the mark is left. For this reason, the solution can be efficiently guided to the entire bonding surface with the wafer through the through-hole, and the adhesive substance interposed between the wafer and the perforated support plate can be quickly reacted to react with the wafer. The perforated support plate can be peeled off in a short time.
しかし、昨今では、ウエハが300mm以上に大径化してきており、これに伴い孔あきサポートプレートも300mm以上の大径化が要求されてきている。孔あきサポートプレートは、溶解液を通すための貫通孔のない普通のサポートプレートに比べ、貫通孔の分だけ基材の構成物質が欠如しており、剛性が低い。これまでの小径の孔あきサポートプレートにおいては、ある一定の強度を確保することができたが、300mm以上に大径化した孔あきサポートプレートにおいては、0.7mm厚では、剛性の不足により上記のある一定の強度が確保されなくなり、撓みが発生する。即ち、従来の孔あきサポートプレートは、大径化すると撓みが生じてウエハの撓みが抑えられなくなるという問題があった。 However, in recent years, the diameter of the wafer has been increased to 300 mm or more, and accordingly, the diameter of the perforated support plate is also required to be increased to 300 mm or more. The perforated support plate lacks the constituent material of the base material by the amount of the through-hole and is less rigid than the ordinary support plate without the through-hole for allowing the solution to pass therethrough. With a small-diameter perforated support plate so far, a certain level of strength could be ensured. However, with a perforated support plate having a diameter of 300 mm or more, 0.7 mm thick, A certain level of strength is not ensured, and bending occurs. That is, the conventional perforated support plate has a problem that when the diameter is increased, the deflection occurs, and the deflection of the wafer cannot be suppressed.
上記の問題を回避するために、従来は、300mm以上の大径の孔あきサポートプレートとして、1mm厚のガラス製の板状基材を0.8mmにまで薄く加工したものを使用していた。しかし、このような場合には、1mm厚の板状基材を0.8mm厚になるまで薄く削るなどの加工が必要であり、0.7mm厚のガラス製の板状基材をそのまま使用する場合に比べて作業工程が増加するという問題があった。その上、300mm以上の大径の孔あきサポートプレートとそれよりも小径の孔あきサポートプレートとでは厚みが異なる。そのため、孔あきポートプレートを扱う装置(例えば、貼り合わせ装置、剥離装置等)ごとに、異なる厚みをもつ孔あきサポートプレートを取り扱えるように各厚みに対応する部品をそれぞれ設ける等の必要があり、部品点数が増加する又は装置が大型化する等の問題があった。 In order to avoid the above problem, conventionally, a 1 mm-thick glass plate-like substrate thinned to 0.8 mm was used as a large-diameter perforated support plate having a diameter of 300 mm or more. However, in such a case, processing such as thinly cutting a 1 mm-thick plate-like substrate until it becomes 0.8 mm thick is necessary, and a 0.7 mm-thick glass plate-like substrate is used as it is. There was a problem that the number of work steps increased compared to the case. In addition, the thickness of the support plate having a large diameter of 300 mm or more is different from that of the support plate having a small diameter. Therefore, it is necessary to provide components corresponding to each thickness so that a perforated support plate having a different thickness can be handled for each device (for example, a bonding device, a peeling device, etc.) that handles a perforated port plate. There have been problems such as an increase in the number of parts and an increase in the size of the apparatus.
本発明は、上記問題に鑑みてなされたもので、剛性を高めた孔あきサポートプレートを提供することを目的とする。 The present invention has been made in view of the above problems, and an object thereof is to provide a perforated support plate having increased rigidity.
本発明は上記課題を解決するために以下のように構成する。
ウエハを接着層を挟んで面サポートするための孔あきサポートプレートであって、板状基材に形成した、幾何学模様の線からなる撓み防止用孔無し領域である撓み防止用の補強部を備え、前記幾何学模様は、複数の同心円、放射状に延びた線、又は同一図形の繰り返しによって構成される。
In order to solve the above problems, the present invention is configured as follows.
A perforated support plate for supporting a surface of a wafer with an adhesive layer interposed therebetween, and a reinforcing portion for preventing deflection, which is a region having no holes for preventing deflection formed of a line of a geometric pattern, formed on a plate-like substrate. The geometric pattern includes a plurality of concentric circles, radially extending lines, or repetition of the same figure.
また、ウエハを接着層を挟んで面サポートするための孔あきサポートプレートであって、Also, a perforated support plate for supporting the wafer with the adhesive layer interposed therebetween,
板状基材に形成した、幾何学模様の線からなる撓み防止用孔無し領域である撓み防止用の補強部を備え、前記幾何学模様の線幅は1mm以下である。A reinforcing portion for preventing bending, which is a region without a hole for preventing bending formed of a line of a geometric pattern, formed on a plate-like substrate is provided, and the line width of the geometric pattern is 1 mm or less.
また、上記孔あきサポートプレートには、更に真空吸着装置に対応する吸着用未開口領域を設けてもよい。
また、上記孔あきサポートプレートは、径が略300mmであり且つ厚みが0.7mm以下であることが好ましい。
The perforated support plate may further be provided with an unopened suction area corresponding to a vacuum suction device.
The perforated support plate preferably has a diameter of about 300 mm and a thickness of 0.7 mm or less.
本発明においては、撓み防止用の補強部を備えるようにしたので、孔あきサポートプレートの剛性を高めることができる。
また、上記撓み防止用の補強部を板状基材に、幾何学模様の線からなる撓み防止用孔無し領域として設けるようにした場合は、孔あきサポートプレートの厚みを板状基材の厚みに合わせることができる。
In the present invention, since the reinforcing portion for preventing deflection is provided, the rigidity of the perforated support plate can be increased.
In addition, in the case where the reinforcing portion for preventing bending is provided on the plate-like base material as a region having no holes for preventing bending made of a geometric pattern line, the thickness of the perforated support plate is set to the thickness of the plate-like base material. Can be adapted to
また、上記幾何学模様が、複数の同心円、放射状に延びた線、又は同一図形の繰り返しにより構成される場合は、孔あきサポートプレートの広範囲に渡って効率よく面強度を上げることができる。 In addition, when the geometric pattern is constituted by a plurality of concentric circles, radially extending lines, or repetition of the same figure, the surface strength can be efficiently increased over a wide range of the perforated support plate.
また、上記幾何学模様の線幅を1mm以下とすることにより、貫通孔のピッチと撓み防止用の補強部を介して隣り合う貫通孔のピッチとの差が狭まる。そのため、撓み防止用の補強部を設けたことによるウエハと孔あきサポートプレートの剥離時間の増大を、小さく抑えることができる。 Further, by setting the line width of the geometric pattern to 1 mm or less, the difference between the pitch of the through holes and the pitch of the adjacent through holes via the reinforcing portion for preventing deflection is narrowed. Therefore, the increase in the peeling time between the wafer and the perforated support plate due to the provision of the reinforcing portion for preventing the bending can be suppressed to a small level.
また、吸着用未開口領域を設けることにより、真空吸着装置を利用した場合における吸着性も良くなる。
特に径が300mm以上の0.7mm厚の孔あきサポートプレートにおいては、剛性が高められることにより撓みの発生を抑えることができるようになり、孔あきサポートプレートとしての利用性が高まる。
Further, by providing the non-opening area for adsorption, the adsorptivity when using a vacuum adsorption apparatus is improved.
In particular, in a perforated support plate having a diameter of 300 mm or more and a thickness of 0.7 mm, the occurrence of bending can be suppressed by increasing the rigidity, and the usability as a perforated support plate is increased.
以下、本発明を実施するための最良の形態について、図面を参照しながら詳細に説明する。
(第一の実施の形態)
図1及び図2は、第一の実施の形態における本発明の孔あきサポートプレートの説明図である。図1(a)は、上記孔あきサポートプレートの斜視図、同図(b)は、上記孔あきサポートプレートの平面図である。また、図2(a)は、図1(b)における点線A部分の拡大図であり、同2(b)は、同図(a)のB−B´線における断面図である。
Hereinafter, the best mode for carrying out the present invention will be described in detail with reference to the drawings.
(First embodiment)
FIG.1 and FIG.2 is explanatory drawing of the perforated support plate of this invention in 1st embodiment. FIG. 1A is a perspective view of the perforated support plate, and FIG. 1B is a plan view of the perforated support plate. 2A is an enlarged view of a dotted line A portion in FIG. 1B, and FIG. 2B is a cross-sectional view taken along line BB ′ of FIG.
図1(a)及び(b)の孔あきサポートプレート1は、0.7mm厚の板状のガラス材料を径300mmの円形に加工した板状基材10に、全面に約0.4mm径の多数の貫通孔(同図において点で示したもの)12を空けたものである。 A perforated support plate 1 shown in FIGS. 1 (a) and 1 (b) is formed on a plate-like substrate 10 obtained by processing a plate-like glass material having a thickness of 0.7 mm into a circle having a diameter of 300 mm. A number of through-holes (shown by dots in the figure) 12 are opened.
貫通孔12は、エッチング等により板状基材10の片面又は両面から厚み方向へガラス物質を除去するなどして形成されたものである。この貫通孔12は、ウエハ(図示せず)と貼り合わせる側の面(同図(b)に示されている板状基材10の面)に向けて液体を導く通路として利用される。この液体としては、ウエハと板状基材10との間(同図(b)に示されている板状基材10の面上)に介在してウエハと板状基材10とを貼り合わせる図示しない粘着部材(例えば接着剤等)の溶解液が利用される。この溶解液は、ウエハを薄化した後に板状基材10を剥離する際に使用されるものであるため、貫通孔12は、板状基材10の剥離時に貫通されていればよい。以下の説明において、貫通孔12は、板状基材10を厚み方向に貫通した孔とするが、板状基材を剥離する直前に貫通させることができるように、ガラス物質の一部を残して未貫通状態にしておいてもよい。 The through-hole 12 is formed by removing the glass material in the thickness direction from one or both sides of the plate-like substrate 10 by etching or the like. The through-hole 12 is used as a passage for guiding the liquid toward the surface (the surface of the plate-like substrate 10 shown in FIG. 5B) on the side to be bonded to the wafer (not shown). As this liquid, the wafer and the plate-like substrate 10 are bonded together by being interposed between the wafer and the plate-like substrate 10 (on the surface of the plate-like substrate 10 shown in FIG. 5B). A solution of an adhesive member (not shown) such as an adhesive is used. Since this solution is used when the plate-like substrate 10 is peeled after the wafer is thinned, the through hole 12 only needs to be penetrated when the plate-like substrate 10 is peeled off. In the following description, the through-hole 12 is a hole penetrating the plate-like substrate 10 in the thickness direction, but leaves a part of the glass substance so that the plate-like substrate can be penetrated immediately before peeling. May be left unpenetrated.
孔あきサポートプレート1においては更に板状基材10が、円の繰り返しによって構成された幾何学模様の線の部位14において貫通孔を有しない構造となっている。
上記の幾何学模様の線の部位14のより詳しい構造は、図2(a)の部分拡大図及び同図(b)の断面図に示した如くである。即ち、図2(a)に示すように、板状基材10上には略均等に高い密度で多数の貫通孔(同図(a)の黒い点)12が設けられているが、幾何学模様の線の部位(同図(a)の白い太線)14においては上記貫通孔が設けられていない。また、同図(b)に示すように、領域12´においては、板状基材10の上面10Aから下面10B(厚み方向)に貫通した多数の貫通孔12が設けられており、それぞれの貫通孔12(同図(b)の黒く縦縞で示された部分)の位置においてガラス物質が完全に除去されているが、円の繰り返しによる幾何学模様の線の部位14においては貫通孔がないため、板状基材10を構成しているガラス物質がそのまま残っている。
In the perforated support plate 1, the plate-like base material 10 has a structure that does not have a through-hole in a line portion 14 of a geometric pattern formed by repeating circles.
A more detailed structure of the geometric pattern line portion 14 is as shown in the partially enlarged view of FIG. 2A and the cross-sectional view of FIG. That is, as shown in FIG. 2 (a), a large number of through holes (black dots in FIG. 2 (a)) 12 are provided on the plate-like substrate 10 with a substantially equal density. The through-hole is not provided in the part of the pattern line (white thick line in FIG. 1A) 14. Further, as shown in FIG. 4B, in the region 12 ′, a large number of through holes 12 penetrating from the upper surface 10A to the lower surface 10B (thickness direction) of the plate-like base material 10 are provided. The glass material is completely removed at the position of the hole 12 (the portion indicated by black vertical stripes in FIG. 5B), but there is no through hole in the line portion 14 of the geometric pattern due to repeated circles. The glass material constituting the plate-like substrate 10 remains as it is.
ここで、幾何学模様の線の部位14の寸法と貫通孔12の寸法の一例を挙げると次の如くである。即ち、幾何学模様の線は約1mm幅、円の内径29mm、及び円の外径31mmであり、また、貫通孔12は約0.4mm径、約0.6mmピッチで設けられている。上記幾何学模様の線は、上記のように所定の線幅を有しており、図2(a)に示すようにその部位14において、貫通孔12が設けられている領域を島状に分断する。 Here, an example of the dimension of the line portion 14 of the geometric pattern and the dimension of the through hole 12 is as follows. That is, the geometric pattern line is about 1 mm wide, the inner diameter of the circle is 29 mm, and the outer diameter of the circle is 31 mm, and the through holes 12 are provided with a diameter of about 0.4 mm and a pitch of about 0.6 mm. The line of the geometric pattern has a predetermined line width as described above. As shown in FIG. 2A, the region where the through hole 12 is provided is divided into islands at the portion 14 thereof. To do.
上記の数値構成においては、300mm径及び0.7mm厚のガラス製の孔あきの板状基材であっても撓みは発生しない。これは、幾何学模様の線の部位14に残ったガラス物質が、各貫通孔12を囲むガラス物質と一体のものであり、板状基材10の剛性を高めるように作用し、板状基材10の撓みを防止する補強部として機能するためである。そこで、本明細書では、板状基材10に形成された上記幾何学模様の線の部位14の領域を「補強部」又は「撓み防止用孔無し領域」と呼んでいる。 In the above numerical configuration, even a 300 mm diameter and 0.7 mm thick glass perforated plate base material does not bend. This is because the glass material remaining in the line portion 14 of the geometric pattern is integrated with the glass material surrounding each through-hole 12 and acts to increase the rigidity of the plate-like base material 10. This is because it functions as a reinforcing portion that prevents the bending of the material 10. Therefore, in this specification, the region of the line portion 14 of the geometric pattern formed on the plate-like base material 10 is referred to as a “reinforcing portion” or “a region without a deflection preventing hole”.
なお、貫通孔12の径の大きさ及び配置は、ウエハと板状基材10の間の貼り合わせ精度と、ウエハから板状基材10を剥離する際の剥離時間と密接に関係する。そのため、補強部を設ける場合においては、所要の撓み防止効果を保持しながら上記剥離時間が延びないように注意を払う必要がある。現段階では、上記剥離時間が延びることを抑えるには、補強部の線幅を1mm以下に設定するとよいことが分かっている。 Note that the size and arrangement of the diameters of the through holes 12 are closely related to the bonding accuracy between the wafer and the plate-like substrate 10 and the peeling time when the plate-like substrate 10 is peeled from the wafer. Therefore, when providing a reinforcement part, it is necessary to pay attention so as not to extend the peeling time while maintaining a required bending prevention effect. At the present stage, it has been found that the line width of the reinforcing portion may be set to 1 mm or less in order to suppress the extension of the peeling time.
なお、上記補強部及び貫通孔には、ここでは一枚の板状基材10に形成されているため、双方を同時に形成することができる。即ち、貫通孔12が形成される位置が開口し且つ補強部となる領域が開口していないレジストマスクをフォトリソグラフィ工程を通じて板状基材上に積層し、ドライエッチング等の異方性エッチングにより上記開口部を通じて上記板状基材に貫通孔を空け、次いで、板状基材上のレジストマスクを除去するなどして形成できる。この場合、最後にレジストマスクを除去した位置に残った、幾何学模様の線で示される1mm以下の領域が、補強部となる。 In addition, since the said reinforcement part and the through-hole are formed in the sheet-like base material 10 here, both can be formed simultaneously. That is, a resist mask in which a position where the through-hole 12 is formed is opened and a region serving as a reinforcing portion is not opened is laminated on a plate-like substrate through a photolithography process, and the above-mentioned is performed by anisotropic etching such as dry etching. It can be formed by opening a through hole in the plate-like substrate through the opening and then removing the resist mask on the plate-like substrate. In this case, an area of 1 mm or less, which is indicated by a line of the geometric pattern, remaining at the position where the resist mask was last removed becomes a reinforcing portion.
また、以上においては、板状基材に形成された補強部即ち「撓み防止用孔無し領域」について説明したが、「撓み防止用孔無し領域」に限らず、他の形態で「補強部」を設けてもよい。例えば、上記幾何学模様の線により示される範囲外を開口又は複数の貫通孔を設けた別体の補強板を準備して、この補強板を、全面に貫通孔が空けられたガラス製の板状基材に貼り合わせるなどして設けても、剛性を高めることができる。 In the above description, the reinforcing portion formed on the plate-like base material, that is, the “region without a hole for bending prevention” has been described. However, the “reinforcing portion” is not limited to the “region without a hole for bending prevention”, but in other forms. May be provided. For example, a separate reinforcing plate provided with an opening or a plurality of through holes outside the range indicated by the lines of the geometric pattern is prepared, and this reinforcing plate is made of a glass plate having through holes in the entire surface. Even if it is provided by bonding to a shaped substrate, the rigidity can be increased.
以上に示したように、第一の実施の形態においては、ガラス製の板状基材において円形の幾何学模様の線の部位を未貫通にして、その部位を補強部にした。
上記のように、補強部を、上記板状基材上において円形の幾何学模様にして配置したことにより、広範囲に渡って効率よく面強度を上げることができるようになった。
As described above, in the first embodiment, the portion of the circular geometric pattern line is not penetrated in the glass plate-like base material, and the portion is used as the reinforcing portion.
As described above, by arranging the reinforcing portion in a circular geometric pattern on the plate-like base material, the surface strength can be efficiently increased over a wide range.
また、円形の幾何学模様の補強部を板状基材の全面にわたって設けたことにより、板状基材全面の剛性を高めることができるようになった。300mm径及び0.7mm厚のガラス製の板状基材においては撓みの発生を防止することも可能になり、貼り付け装置及び剥離装置への利用性が上がった。この場合、300mm径よりも小径の0.7mm厚のものと厚みが同じであるため、例えば貼り合わせ装置、剥離装置等において構成を大幅に変更することなく、また、部品も大幅に増やすことなく、小径と大径の孔あきサポートプレートを同様に扱えるようにすることが可能になる。 Moreover, the rigidity of the whole surface of the plate-like substrate can be increased by providing the reinforcing portion of the circular geometric pattern over the entire surface of the plate-like substrate. In the plate-like substrate made of glass having a diameter of 300 mm and a thickness of 0.7 mm, it becomes possible to prevent the occurrence of bending, and the usability to the attaching device and the peeling device has been improved. In this case, since the thickness is the same as the 0.7 mm thickness smaller than the 300 mm diameter, for example, without significantly changing the configuration in the bonding apparatus, the peeling apparatus, etc., and without significantly increasing the number of parts. It becomes possible to handle the small-diameter and large-diameter perforated support plates in the same manner.
また、上記のように板状基材自体に補強部を構成したもの即ち「撓み防止用孔無し領域」を備えたものについては板状基材と補強部の厚みが同じであるため、孔あきサポートプレートを上記板状基材と同じ厚みにすることができるようになった。 In addition, the plate-like base material itself having a reinforcing portion, that is, the one having the “deflection-preventing hole-free region” has the same thickness as the plate-like base material and the reinforcing portion. The support plate can be made the same thickness as the plate-like substrate.
また、上記幾何学模様の線幅を1mm以下とすることにより、貫通孔のピッチと撓み防止用の補強部を介して隣り合う貫通孔のピッチとの差が狭まる。そのため、撓み防止用の補強部を設けたことによるウエハと孔あきサポートプレートの剥離時間の増大を、小さく抑えることができる。 Further, by setting the line width of the geometric pattern to 1 mm or less, the difference between the pitch of the through holes and the pitch of the adjacent through holes via the reinforcing portion for preventing deflection is narrowed. Therefore, the increase in the peeling time between the wafer and the perforated support plate due to the provision of the reinforcing portion for preventing the bending can be suppressed to a small level.
また、撓み防止用孔無し領域は貫通孔を空ける際に形成されるので、孔あきサポートプレートを製造する際の全体の工数は増加することは無い。
(第二の実施の形態)
第二の実施の形態においては、片面を真空吸着して保持するタイプの吸着装置において利用される孔あきサポートプレートについて示す。
In addition, since the no-deflection hole-free region is formed when the through-hole is formed, the overall man-hour for manufacturing the perforated support plate does not increase.
(Second embodiment)
In the second embodiment, a perforated support plate used in a suction device that holds a single surface by vacuum suction will be described.
図3(a)は、第二の実施の形態における孔あきサポートプレートの平面図、同図(b)は、同図(a)における点線C部分の拡大図である。なお、各図(a)及び(b)において図1(b)又は図2(a)と同一の構成のものには同一の番号を付した。 FIG. 3A is a plan view of a perforated support plate according to the second embodiment, and FIG. 3B is an enlarged view of a dotted line C portion in FIG. In addition, in each figure (a) and (b), the same number was attached | subjected to the thing of the same structure as FIG.1 (b) or FIG.2 (a).
以下では、第一の実施の形態と異なる点について、詳しく説明することにする。
図3(a)及び(b)の孔あきサポートプレート2は、第一の実施の形態で示したものと同様に、0.7mm厚のガラス製の板状基材10が300mm径に円形に加工されたもので、0.4mm径程度の複数の貫通孔12が全面に高い密度で空けられている。
Hereinafter, differences from the first embodiment will be described in detail.
The perforated support plate 2 in FIGS. 3A and 3B is similar to the one shown in the first embodiment in that a 0.7 mm-thick glass plate-like substrate 10 is circular with a diameter of 300 mm. A plurality of through-holes 12 having a diameter of about 0.4 mm are formed at a high density on the entire surface.
板状基材10には、更に、吸着用未開口領域20が形成されている。吸着用未開口領域20は、真空チャック等を備える真空吸着装置からの真空引きにより高い負圧がかかるように構成されたものである。そのため、吸着用未開口領域20は、真空吸着装置に設けられている吸着用の溝や孔の位置に合わせて設けられるものであり、真空吸着装置の設計に応じて配置や形状も決まってくる。吸着用未開口領域20は、同図(a)に示すようにここでは複数の同心円で示したように配置されている。なお、吸着用未開口領域20は、板状基材10の上下に空気が抜けないようにその領域において未貫通状態の構造を有していればよい。例えば、上下の面とも塞がれた構造、板状基材の厚み方向の一部に遮蔽部を有する構造等である。このように、吸着用未開口領域20は、貫通孔を有しないが、「補強部」とは形成する位置、形成する面積、機能、及び具体的な構造の面で全く異なる。 The plate-like base material 10 is further formed with an unopened area 20 for adsorption. The non-opening area 20 for suction is configured so that a high negative pressure is applied by evacuation from a vacuum suction apparatus including a vacuum chuck or the like. Therefore, the suction non-opening region 20 is provided in accordance with the position of the suction groove or hole provided in the vacuum suction device, and the arrangement and shape are determined according to the design of the vacuum suction device. . The non-opening area 20 for adsorption is arranged as shown by a plurality of concentric circles as shown in FIG. In addition, the adsorption | suction non-opening area | region 20 should just have the structure of the non-penetrating state in the area | region so that air may not escape up and down of the plate-shaped base material 10. FIG. For example, a structure in which both the upper and lower surfaces are closed, a structure having a shielding part in a part in the thickness direction of the plate-like substrate, and the like. As described above, the suction non-opening region 20 does not have a through hole, but is completely different from the “reinforcing portion” in terms of the position to be formed, the area to be formed, the function, and the specific structure.
形成する面積の点では、例えば、吸着用未開口領域20と撓み防止用孔無し領域14とは互いに線幅が異なる。同図(b)においては、撓み防止用孔無し領域14の線幅は吸着用未開口領域20の線幅よりも狭く形成されている。なお、それぞれの線幅を比較するために一例として数値データを挙げると、次の如くになる。即ち、各貫通孔12は約0.4mm径、約0.6mmピッチで設けられ、円の繰り返しによる幾何学模様の線14は約0.7mm幅、円の内径29.5mm、及び円の外径30mmで配置される。そして、上記吸着用未開口領域20を構成している同心円の線は各々、約1mm幅で設けられる。ただし、吸着用未開口領域20は、真空吸着装置の吸着溝又は吸着孔を塞ぐ大きさで設ける必要があるため、真空吸着装置の吸着溝又は吸着孔に合わせて線幅を最低でも0.5mm以上に広くとることが好ましい。 In terms of the area to be formed, for example, the suction non-opening region 20 and the deflection preventing holeless region 14 have different line widths. In FIG. 2B, the line width of the deflection preventing holeless region 14 is narrower than the line width of the suction non-opening region 20. In order to compare the line widths, numerical data is given as an example as follows. That is, each through-hole 12 is provided with a diameter of about 0.4 mm and a pitch of about 0.6 mm, and the geometric pattern line 14 by repeating the circle is about 0.7 mm wide, the inner diameter of the circle is 29.5 mm, and the outside of the circle. It is arranged with a diameter of 30 mm. And the line of the concentric circle which comprises the said non-opening area | region 20 for adsorption | suction is each provided about 1 mm wide. However, since the suction non-opening region 20 needs to be provided in a size that covers the suction groove or suction hole of the vacuum suction device, the line width should be at least 0.5 mm or more in accordance with the suction groove or suction hole of the vacuum suction device. It is preferable to take a wide range.
なお、第二の実施の形態においては、上記吸着用未開口領域20と上記撓み防止用孔無し領域14とが重なる部分(共通領域)が発生する。この共通領域においては真空吸着装置による吸着性を低下させずに板状基材を補強するという二つの目的を達成させる必要がある。そのため、上記共通領域は上記撓み防止用孔無し領域14として構成する。 In the second embodiment, a portion (common region) where the suction non-opening region 20 and the deflection preventing holeless region 14 overlap is generated. In this common region, it is necessary to achieve the two purposes of reinforcing the plate-like substrate without reducing the adsorptivity by the vacuum suction device. Therefore, the common area is configured as the deflection preventing holeless area 14.
なお、吸着用未開口領域20及び撓み防止用孔無し領域14は例えば次の如くに貫通孔12の形成工程と同時に形成することができる。即ち、貫通孔12が形成される位置が開口し且つ吸着用未開口領域20及び撓み防止用孔無し領域14に対応する位置が開口していないレジストマスクをフォトリソグラフィ工程を通じてガラス製の板状基材10上に積層し、ドライエッチング等の異方性エッチングにより板状基材10に上記開口部を通じて貫通孔を空け、次いで、板状基材10上のレジストマスクを除去する等して形成できる。この場合、最後にレジストマスクを除去した位置に残った領域のうちの、幾何学模様の線で示される例えば0.7mm以下の領域が撓み防止用孔無し領域14となり、同心円の線で示される例えば1mm以上の領域が吸着用未開口領域20となる。 The suction non-opening region 20 and the deflection preventing hole-free region 14 can be formed simultaneously with the formation process of the through-hole 12 as follows, for example. That is, a resist mask in which the position where the through-hole 12 is formed is opened and the position corresponding to the non-opening area 20 for adsorption and the area 14 without a hole for bending prevention is not opened is formed through a photolithography process. It can be formed by laminating on the material 10, making a through hole through the opening in the plate-like substrate 10 by anisotropic etching such as dry etching, and then removing the resist mask on the plate-like substrate 10. . In this case, of the region remaining at the position where the resist mask was finally removed, the region of 0.7 mm or less indicated by the geometric pattern line is the non-deflection holeless region 14 and is indicated by the concentric circle line, for example. An area of 1 mm or more becomes an unopened area 20 for suction.
以上に示したように、第二の実施の形態においては、第一の実施の形態に示した板状基材に更に吸着用未開口領域20を設けたものを示した。第二の実施の形態における孔あきサポートプレートは、吸着用未開口領域20が設けられているため、第一の実施の形態に示した孔あきサポートプレート1と比べると吸着性が向上している。また、特に、撓み防止用孔無し領域14には吸着用未開口領域20と重なる領域(共通領域)が含まれているが、その共通領域において貫通孔を構成していないため、第一の実施の形態における孔なしサポートプレート1と同様の効果も得ることができる。
(第三の実施の形態)
第三の実施の形態においては、第一及び第二の実施の形態において示した本発明の孔あきサポートプレートに構成されている補強部(特に撓み防止用孔無し領域)と、吸着用未開口領域の変形例を示す。ただし、以下において特に説明しないが「撓み防止用孔無し領域」と「吸着用未開口領域」のそれぞれは、第二の実施の形態に示した条件で設けられているものとする。
As described above, in the second embodiment, the plate-like base material shown in the first embodiment is further provided with the adsorption unopened region 20. Since the perforated support plate in the second embodiment is provided with the suction non-opening region 20, the adsorptivity is improved as compared with the perforated support plate 1 shown in the first embodiment. . In particular, the region 14 without bending for preventing deflection includes a region (common region) that overlaps with the non-opening region 20 for adsorption, but the common region does not constitute a through hole. The same effect as the support plate 1 without a hole in the form of can be obtained.
(Third embodiment)
In the third embodiment, a reinforcing portion (particularly a region without a deflection preventing hole) configured in the perforated support plate of the present invention shown in the first and second embodiments, and an unopened portion for suction The modification of an area | region is shown. However, although not specifically described below, it is assumed that each of the “deflection prevention hole-free region” and the “adsorption non-opening region” is provided under the conditions described in the second embodiment.
図4及び図5は、第一の実施の形態において示した補強部(又は第二の実施の形態において示した撓み防止用孔無し領域)の円形の幾何学模様の線の変形例である。
図4は、上記円形の幾何学模様の線を多角形の幾何学模様の線に変更した場合の例であり、六角形の繰り返しパターンによる幾何学模様の線30によって補強部(又は撓み防止用孔無し領域)を構成している。
FIG. 4 and FIG. 5 are modifications of the circular geometric pattern lines of the reinforcing portion shown in the first embodiment (or the region without a deflection preventing hole shown in the second embodiment).
FIG. 4 shows an example in which the circular geometric pattern line is changed to a polygonal geometric pattern line, and the reinforcing part (or the deflection preventing part) is formed by the geometric pattern line 30 having a hexagonal repeating pattern. Non-hole region).
図5は、上記円形の幾何学模様の線を複数の同心円の組み合わせによる幾何学模様の線に変更した場合の例であり、半径の異なる6つの同心円の線40によって補強部(又は撓み防止用孔無し領域)を構成している。 FIG. 5 shows an example in which the circular geometric pattern line is changed to a geometric pattern line formed by a combination of a plurality of concentric circles, and the reinforcing portion (or for preventing deflection) by six concentric circular lines 40 having different radii. Non-hole region).
図6から図8は、第二の実施の形態において示した吸着用未開口領域の同心円の形状を変形した例である。それぞれは、真空吸着装置に構成されている吸着用の溝や孔の位置に合わせて変形されたものである。 6 to 8 are examples in which the shape of the concentric circles of the unopened region for suction shown in the second embodiment is modified. Each of them is deformed in accordance with the positions of the suction grooves and holes formed in the vacuum suction device.
図6は、吸着用未開口領域を島状に設けた場合の例である。ここでは、同図に示すように、中心から等距離の4箇所の位置に楕円形の吸着用未開口領域50を設けている。
図7は、吸着用未開口領域を、互いに直行する2本の帯状の線60にして設けた場合の例である。
FIG. 6 shows an example in which the non-opening area for adsorption is provided in an island shape. Here, as shown in the figure, oval suction non-opening regions 50 are provided at four positions equidistant from the center.
FIG. 7 shows an example in which the non-opening area for adsorption is provided as two strip-like lines 60 that are orthogonal to each other.
図8は、吸着用未開口領域を、中心部を島状にして且つ外周部を同心円の線70にして設けた場合の例である。
なお、以上に示した補強部(又は撓み防止用孔無し領域)の模様は、一例である。そのため、上記補強部(又は撓み防止用孔無し領域)の模様をその他の幾何学模様の線で構成してもよい。例えば、円或いは多角形を一つだけ使用して上記幾何学模様の線を構成してもよい。
FIG. 8 shows an example in which the suction non-opening region is provided with an island shape at the center and a concentric line 70 at the outer periphery.
In addition, the pattern of the reinforcement part (or area | region without a hole for bending prevention) shown above is an example. Therefore, you may comprise the pattern of the said reinforcement part (or area | region without a hole for bending prevention) with the line of another geometric pattern. For example, the geometric pattern line may be formed by using only one circle or polygon.
また、以上に示した吸着用未開口領域の形状もまた、一例である。そのため、真空吸着装置に構成されている吸着用の溝や孔に合わせて、上記吸着用未開口領域の形状を適宜変形してもよい。 The shape of the non-opening area for adsorption shown above is also an example. Therefore, the shape of the non-opening area for suction may be appropriately changed in accordance with the suction groove or hole configured in the vacuum suction apparatus.
また、片面を真空吸着して保持するタイプの吸着装置において利用される孔あきサポートプレートにおいては、以上に示した各模様及び形状を任意に組み合わせて上記の撓み防止用孔無し領域の模様及び上記の吸着用未開口領域の形状をつくってもよい。 In addition, in the perforated support plate used in the suction device of the type that holds one surface by vacuum suction, the above-described pattern of the non-deflection hole and the above-mentioned pattern and shape are arbitrarily combined. The shape of the unopened region for adsorption may be formed.
以上のように、第三の実施の形態においては、様々な模様により補強部を構成できる。そのため、板状基材の材質や設計の上から、最適な模様を選択することができる。また、様々な模様、形状を組み合わせて撓み防止用孔無し領域の模様及び吸着用未開口領域の形状を構成できるため、吸着性が高く且つ剛性が高い孔あきサポートプレートを真空吸着装置の構成に応じて適宜選択することができる。 As described above, in the third embodiment, the reinforcing portion can be configured with various patterns. Therefore, an optimal pattern can be selected from the material and design of the plate-like substrate. In addition, since various patterns and shapes can be combined to form the pattern of the non-deflection hole-free area and the shape of the non-opening area for adsorption, a perforated support plate with high adsorption and rigidity can be used as a vacuum adsorption device. It can be appropriately selected depending on the case.
また、第一及び第二の実施の形態に示した効果も得られる。 Further, the effects shown in the first and second embodiments can also be obtained.
1 孔あきサポートプレート
10 ガラス製の板状基材
12 貫通孔
14 幾何学模様の線の部位
DESCRIPTION OF SYMBOLS 1 Perforated support plate 10 Glass plate-shaped base material 12 Through-hole 14 Geometric pattern line part
Claims (4)
板状基材に形成した、幾何学模様の線からなる撓み防止用孔無し領域である撓み防止用の補強部を備え、
前記幾何学模様は、複数の同心円、放射状に延びた線、又は同一図形の繰り返しによって構成されている、
ことを特徴とする孔あきサポートプレート。 A perforated support plate for supporting a wafer with a bonding layer interposed therebetween,
Provided with a reinforcing portion for preventing deflection, which is a region without a hole for preventing deflection formed of a line of a geometric pattern, formed on a plate-like substrate ,
The geometric pattern is constituted by a plurality of concentric circles, radially extending lines, or repetition of the same figure.
Perforated support plate characterized by that.
板状基材に形成した、幾何学模様の線からなる撓み防止用孔無し領域である撓み防止用の補強部を備え、
前記幾何学模様の線幅は1mm以下である、
ことを特徴とする孔あきサポートプレート。 A perforated support plate for supporting a wafer with a bonding layer interposed therebetween,
Provided with a reinforcing portion for preventing deflection, which is a region without a hole for preventing deflection formed of a line of a geometric pattern, formed on a plate-like substrate,
The line width of the geometric pattern is 1 mm or less,
Perforated support plate, characterized in that.
ことを特徴とする請求項1または2に記載の孔あきサポートプレート。 The support plate has an unopened area for suction;
The perforated support plate according to claim 1 or 2, wherein the support plate is perforated.
ことを特徴とする請求項1乃至3の内の何れか一つに記載の孔あきサポートプレート。 The diameter is approximately 300 mm and the thickness is 0.7 mm or less.
A perforated support plate according to any one of claims 1 to 3.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006355508A JP4922752B2 (en) | 2006-12-28 | 2006-12-28 | Perforated support plate |
| US12/448,499 US20090288780A1 (en) | 2006-12-28 | 2007-11-26 | Perforated support plate |
| PCT/JP2007/001295 WO2008081561A1 (en) | 2006-12-28 | 2007-11-26 | Perforated support plate |
| TW096149765A TWI456686B (en) | 2006-12-28 | 2007-12-24 | Perforated support plate |
| US13/939,524 US8882096B2 (en) | 2006-12-28 | 2013-07-11 | Perforated support plate |
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| Application Number | Priority Date | Filing Date | Title |
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| JP2006355508A JP4922752B2 (en) | 2006-12-28 | 2006-12-28 | Perforated support plate |
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| Publication Number | Publication Date |
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| JP2008166566A JP2008166566A (en) | 2008-07-17 |
| JP4922752B2 true JP4922752B2 (en) | 2012-04-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2006355508A Expired - Fee Related JP4922752B2 (en) | 2006-12-28 | 2006-12-28 | Perforated support plate |
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| Country | Link |
|---|---|
| US (2) | US20090288780A1 (en) |
| JP (1) | JP4922752B2 (en) |
| TW (1) | TWI456686B (en) |
| WO (1) | WO2008081561A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11348822B2 (en) | 2019-09-19 | 2022-05-31 | Kabushi Kaisha Toshiba | Support substrate, method for peeling off support substrate, and method for manufacturing semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5426855B2 (en) * | 2008-09-18 | 2014-02-26 | 東京応化工業株式会社 | Manufacturing method of glass substrate |
| JP5662664B2 (en) * | 2008-12-19 | 2015-02-04 | 東京応化工業株式会社 | Processed substrate and manufacturing method thereof |
| JP5695304B2 (en) * | 2009-06-09 | 2015-04-01 | 東京応化工業株式会社 | Support plate, manufacturing method thereof, substrate processing method |
| JP2016146429A (en) * | 2015-02-09 | 2016-08-12 | トヨタ自動車株式会社 | Manufacturing method of semiconductor device |
| WO2016142239A1 (en) | 2015-03-11 | 2016-09-15 | Nv Bekaert Sa | Carrier for temporary bonded wafers |
| JP6663442B2 (en) | 2015-03-11 | 2020-03-11 | エンベー ベカルト ソシエテ アノニムNV Bekaert SA | Temporarily bonded wafer carrier |
| WO2016142238A1 (en) | 2015-03-11 | 2016-09-15 | Nv Bekaert Sa | Carrier for temporary bonded wafers |
| WO2016142240A1 (en) | 2015-03-11 | 2016-09-15 | Nv Bekaert Sa | Carrier for temporary bonded wafers |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US5298337A (en) * | 1989-07-05 | 1994-03-29 | Alabama Cryogenic Engineering, Inc. | Perforated plates for cryogenic regenerators and method of fabrication |
| JP2000195878A (en) * | 1998-12-24 | 2000-07-14 | Toshiba Corp | Wafer transfer / fixing jig and semiconductor device manufacturing method |
| JP4447206B2 (en) * | 2002-10-18 | 2010-04-07 | 株式会社ディスコ | Semiconductor wafer protection unit and semiconductor wafer processing method |
| JP2005191550A (en) * | 2003-12-01 | 2005-07-14 | Tokyo Ohka Kogyo Co Ltd | Substrate pasting method |
| JP2006135272A (en) * | 2003-12-01 | 2006-05-25 | Tokyo Ohka Kogyo Co Ltd | Substrate support plate and support plate peeling method |
| US20060141412A1 (en) * | 2004-12-27 | 2006-06-29 | Masten James H | Burner plate and burner assembly |
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- 2006-12-28 JP JP2006355508A patent/JP4922752B2/en not_active Expired - Fee Related
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2007
- 2007-11-26 US US12/448,499 patent/US20090288780A1/en not_active Abandoned
- 2007-11-26 WO PCT/JP2007/001295 patent/WO2008081561A1/en not_active Ceased
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11348822B2 (en) | 2019-09-19 | 2022-05-31 | Kabushi Kaisha Toshiba | Support substrate, method for peeling off support substrate, and method for manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| US20130333833A1 (en) | 2013-12-19 |
| JP2008166566A (en) | 2008-07-17 |
| US20090288780A1 (en) | 2009-11-26 |
| TW200834807A (en) | 2008-08-16 |
| WO2008081561A1 (en) | 2008-07-10 |
| US8882096B2 (en) | 2014-11-11 |
| TWI456686B (en) | 2014-10-11 |
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