JP4923922B2 - Extreme ultraviolet exposure mask, manufacturing method thereof, and semiconductor integrated circuit manufacturing method using the same - Google Patents

Description

  The present invention relates to an extreme ultraviolet exposure mask used in a photolithography process using extreme ultraviolet exposure in a semiconductor manufacturing process, a manufacturing method thereof, and a semiconductor integrated circuit manufacturing including a pattern transfer process using the mask. Regarding the method.

  The miniaturization technology of semiconductor integrated circuits is constantly progressing, and the wavelength of light used in the photolithographic technology for miniaturization is gradually becoming shorter. As the light source, the KrF excimer laser (wavelength 248 nm) that has been used so far is switched to the ArF excimer laser (wavelength 193 nm), and immersion exposure technology using an ArF excimer laser is used as the next generation technology. Yes.

  However, even with immersion exposure using an ArF excimer laser, it is not easy to produce a device having a line width of 32 nm or less that will be required in the future. In addition, there is a problem of an exposure apparatus and a resist to apply immersion exposure using an ArF excimer laser as a lithography technique for manufacturing a device having a line width of 32 nm or less. Therefore, research and development of EUV lithography using extreme ultraviolet (Extreme Ultra Violet, hereinafter abbreviated as “EUV”) having a wavelength of 10 to 15 nm shorter than that of excimer laser light is being advanced.

  Since the EUV light has a short wavelength as described above, the refractive index of the substance is almost the value of vacuum, and the difference in light absorption between the materials is also small. For this reason, when performing EUV exposure, it is not possible to use a refractive optical system exposure system that uses a transmission type mask, which has been used conventionally, and a reflection optical system exposure system is required. Is required.

  A reflection mask for general EUV exposure that has been developed so far (hereinafter referred to as “EUV exposure mask”) is formed on a Si wafer or a glass substrate on a highly reflective region having a high reflectance and on a highly reflective region. This is a structure in which a low-reflection region (absorption region) patterned is formed. The high reflection region is a portion where a multilayer film in which, for example, about 40 layers of two layers of Mo and Si are laminated is exposed to exposure light, and the low reflection region is a metallic film such as Ta provided on the multilayer film. (Absorbing film) is obtained by pattern formation. The high reflection region is formed by a multilayer film in which two kinds of films are alternately laminated, and the two kinds of films are configured so that the difference in refractive index between the two is large while the absorption of each is as small as possible. As a result, in the part where the multilayer film is not covered with the absorption film (high reflection region), a slight reflection component from each interface interferes and strengthens, and the EUV light close to normal incidence has a relatively high reflectance. Can be obtained.

  Here, in order to protect the multilayer film, the uppermost layer (layer close to the absorption film) of the multilayer film may be called a capping film. The capping film may be separately formed using a material having high transparency with respect to EUV light. Here, a laminated film that forms a highly reflective region including the capping film is referred to as a multilayer film.

In a conventional general EUV exposure mask, a buffer (buffer) film made of a SiO ₂ film or a Cr film is disposed between a multilayer film that forms a highly reflective region and a metallic film that forms an absorbing region. Yes. The buffer film is a film having a function of reducing damage to the multilayer film when the absorption film is patterned and defects are corrected. This buffer film is usually peeled after patterning of the absorption film so that the reflectivity of the multilayer film does not decrease, but if the transparency to EUV light is high, a mask for EUV exposure that leaves without peeling is also proposed (Patent Document 1). With the latter type of EUV exposure mask, the EUV light transparency of the buffer film does not decrease even after the subsequent process. Therefore, when the EUV light is actually exposed, the EUV reflectance of the high reflection region decreases. Therefore, it is necessary to develop a mask process and a structure that does not affect the transfer performance.

JP 2004-260056 A

  By the way, when the absorption film is patterned, a part of the absorption film that is originally removed may be left without being removed, thereby causing a defect in the absorption film pattern. As one of the methods for correcting such an absorption film pattern, there is a method in which a focused ion beam is irradiated to a defective portion to scrape and correct the absorption film remaining in the defective portion. However, in the case of an EUV exposure mask of a type that leaves a buffer film, if this focused ion beam correction is performed, ions are implanted into the buffer film, and the EUV light transparency is lowered, and the ion-implanted buffer film is covered. There is a problem that the focused ion beam correction cannot be used because the EUV reflectance of the portion is lowered.

  According to the present invention, it is possible to prevent a substantial decrease in reflectivity in the highly reflective region due to ion implantation into the buffer film, and thus to correct defects by a focused ion beam even in a type of EUV exposure mask that leaves the buffer film without peeling. A mask for EUV exposure that can be used, and a pattern forming method using the mask.

Invention includes a substrate and a multilayer film that reflects EUV light formed on one surface of the substrate, the buffer layer having transparency to EUV light formed on the multilayer film according to claim 1 of the present invention And an extreme ultraviolet exposure mask having a patterned absorption film formed on the buffer film, and after patterning the absorption film, the absorption film is not patterned and the remaining pattern defects are focused. A portion of the buffer film that is corrected by an ion beam and the ion concentration on the surface of the buffer film adjacent to the pattern defect portion is 5 × 10 ²⁰ (atoms / cm ³ ) or more , or the focusing The reflectance of the modified portion of the buffer film modified by the ion beam is lower than the reflectance of the unmodified portion of the buffer film not modified by the focused ion beam by 5% or more. The kick thickness of the modified portion of the buffer layer is obtained by a method for producing extreme ultraviolet exposure mask characterized by Limak thinning by the unmodified portion of the buffer film.

According to a third aspect of the present invention, an extreme ultraviolet exposure mask manufactured by the method for manufacturing an extreme ultraviolet exposure mask according to any one of the first and second aspects is installed in an exposure apparatus, and exposure is performed by a lithography method. This is a method for manufacturing a semiconductor integrated circuit, wherein transfer is performed.

  ADVANTAGE OF THE INVENTION According to this invention, the defect correction by a focused ion beam is attained about the type of EUV exposure mask of the type with which a buffer film is not peeled but remains on a highly reflective area | region.

  Hereinafter, the present invention will be described in detail with reference to the drawings. In the present specification, the same members are denoted by the same reference numerals, and description thereof is omitted or simplified.

  FIG. 1 is a schematic view showing a cross section of an EUV exposure mask 10 according to one embodiment of the present invention. The EUV exposure mask 10 has a configuration in which a multilayer film 2, a buffer film 3, and an absorption film 4 are laminated in this order on a substrate 1. The multilayer film 2 reflects EUV light and covers the entire surface (upper surface) on one side of the substrate 1 with a substantially uniform film thickness. The multilayer film 2 of the present embodiment is configured by alternately stacking two types of films. Specifically, the multilayer film 2 is configured by stacking 40 pairs of two types of films of Mo film and Si film. However, in the present invention, the configuration of the multilayer film 2 is not limited to this, and any film that reflects EUV light can be used.

  The buffer film 3 is made of a material having transparency to EUV light and covers the entire multilayer film 2. On the other hand, the absorption film 4 is patterned, and the multilayer film 2 and the buffer film 3 covering the multilayer film 2 have a portion covered with the absorption film 4 and a portion not covered with the absorption film 4. Since the buffer film 3 is transparent to the EUV light, the multilayer film 2 and the buffer film 3 on the substrate 1 where the buffer film 3 is not covered with the absorption film 3 are highly reflective to reflect the EUV light when the EUV light is exposed. The portion where the multilayer film 2 and the buffer film 3 are covered with the absorption film 4 becomes the low reflection area, that is, the absorption area A.

Although the buffer film 3 of this embodiment is made of ZrSi ₂ , the structure is not particularly limited as long as the material and thickness do not hinder the reflection of the multilayer film 2 with respect to EUV light. For example, as described in Patent Document 1, a film whose material and thickness are specified so that the extinction coefficient with respect to the EUV exposure wavelength is in the range of 0.001 to 0.015 is preferably used as the buffer film. Can be used. The thickness of the buffer film 3 is originally substantially uniform (for example, 30 nm or less, particularly 3 to 10 nm), but in the present invention, as indicated by reference numeral 5, a part thinner than the other part (hereinafter referred to as “film”). Thin part ").

  The thin film portion 5 is a portion processed in order to make the reflectance of the high reflection region R uniform with respect to the defect correction generated in the pattern of the absorption film 4 in the manufacturing process of the EUV exposure mask 10 described later. is there. Hereinafter, the reason for forming the thin film portion 5 will be described in detail with reference to FIGS.

  FIG. 2 is a schematic cross-sectional view showing a reflection state of EUV light in the EUV exposure mask 10 after correcting the pattern defect of the absorption film 4 and before reducing the thickness of a part of the buffer film 3. FIG. 4 is a schematic cross-sectional view showing a reflection state of EUV light in an EUV exposure mask 10 in which a thin film portion 5 is formed by reducing a part of the thickness of the buffer film 3 after correcting the pattern defect of the absorption film 4. is there. In FIG. 2, the portion where the thin film portion 5 is formed later is a portion (hereinafter referred to as “corrected portion”) 5 ′ in which the pattern defect of the absorption film 4 is corrected, and is derived from the ion beam used at the time of correcting the pattern defect. Of ions.

  In the EUV exposure mask 10, EUV exposure light is reflected by the multilayer film 2 and the buffer film 3 in the high reflection region R. When the reflectance in the correction portion 5 ′ is R7 and the portion other than the correction portion 5 ′ (for example, the portion surrounded by a broken line in FIGS. 2 and 3; hereinafter, “uncorrected portion”) N is R3, R3 is It is obtained by the following formula.

(Formula 1)
Reflectivity R3 = multilayer film reflectivity + buffer film reflectivity

FIG. 4 is a graph showing the results obtained by calculating the value of the reflectance R3 when the thickness of the buffer film 3 is changed in the present embodiment. Here, since the interface of the multilayer film is calculated as an ideal interface without diffusion, it is about 5% higher than the reflectance actually obtained. As shown in FIG. 4, R3 gradually decreases while drawing a periodic pattern as the thickness of the buffer film 3 increases due to light absorption and a buffer effect by the buffer film 3. That is, R3 is larger and preferable as the thickness of the buffer film 3 is smaller. Incidentally, FIG. 4, but shows a variation of the R3 in the case where the film buffer layer 3 made of ZrSi _2, observed the same tendency may be composed buffer film 3 is a material other than ZrSi ₂ .

  On the other hand, ions are implanted into the correcting portion 5 ′ by irradiating with a focused ion beam in order to correct pattern defects of the absorption film 4. The correction unit 5 ′ is in the high reflection region R that reflects EUV light, and the reflectance R7 is the same as the reflectance R3 of the non-correction unit N that is the high reflection region R other than the correction unit 5 ′. This is the sum of the reflectance of the multilayer film 2 in the portion 5 ′ and the reflectance of the buffer film 3 in the correction portion 5 ′. However, since ions are implanted into the buffer film 3 in the correcting portion 5 ′, the reflectance R7 of the correcting portion 5 ′ is not the same as the reflectance R3 of the uncorrected portion N.

This point will be described in detail with reference to FIG. FIG. 5 is a graph showing the calculation result of the ion implantation distribution in the buffer film 3 when the pattern defect of the absorption film 4 is corrected using the focused ion beam. As the absorption film 4, a metal film made of Ta with a thickness of 100 nm is used, and the buffer film 3 is a film made of ZrSi ₂ . The focused ion beam was Ga ion acceleration voltage of 10 keV, and the dose was the dose when the Ta film with a thickness of 100 nm was actually corrected. Specifically, the dose was 0.012 (nC / μm ² ).

Since the atomic density of ZrSi ₂ is theoretically about 4.4 × 10 ²² (atoms / cm ³ ), the Ga ion concentration is about 4 × 10 ²⁰ (atoms / cm ³ ), that is, about 1% or less. It is considered that there is almost no decrease in the reflectance of the buffer film 3 due to the implantation of Ga ions. However, as shown in FIG. 5, the Ga ion concentration on the outermost surface of the buffer film 3 (at 0.1 μm on the horizontal axis in FIG. 5) is 1.02 × 10 ²¹ (atoms / cm ³ ). The Ga ion concentration at a depth of 10 nm (0.11 μm on the horizontal axis in FIG. 5) from the surface was 2.66 × 10 ²⁰ (atoms / cm ³ ). Therefore, it can be said that Ga ions having such a concentration as to affect the reflectivity exist above the ZrSi ₂ buffer film 3. Since the EUV light absorptivity of Ga is greater than that of Zr or Si, the reflectance R7 in the correction portion 5 ′ is smaller than the reflectance R3 of the uncorrected portion N, that is, R7 <R3.

  Therefore, in the present invention, the buffer film of the correction unit 5 ′ is set so that the reflectance R7 in the correction unit 5 ′ is close to the reflectance R3 of the non-correction unit N in which ions derived from the ion beam do not exist. 3 is made thinner. The thin film portion 5 shown in FIG. 1 is formed by reducing the film thickness of the buffer film 3 positioned in the correction portion 5 ′, but the correction portion 5 ′ (that is, the thin film thickness) thus thinned is formed. The reflectance R8 in part 5) is improved. That is, since the transmittance of the buffer film 3 increases as the thickness of the buffer film 3 is reduced, the portion in which the thickness of the buffer film 3 is reduced is implanted even though the ions are implanted. The reflectance R8 due to the multilayer film 2 and the buffer film 3 in the portion is increased. That is, by controlling the film thickness of the buffer film 3, the reflectance R8 in the portion where the film thickness is reduced is made substantially equal to the reflectance R3 of the uncorrected portion N, whereby the reflectance of the entire high reflection region R is increased. It can be made uniform.

  The method of reducing the thickness of the correction portion 5 ′ of the buffer film 3 is such that it is used in an atomic force microscope (AFM) that is additionally corrected with a focused ion beam and processed with an electron beam in a reactive gas atmosphere. There are methods such as mechanical processing with fine needles and processing with laser light.

  Hereinafter, the manufacturing method of the EUV exposure mask according to the present invention will be described using the EUV exposure mask 10 described above with reference to FIG. 6 as an example.

  First, a substrate 1 is prepared, and an EUV reflective multilayer film 2 is formed so as to cover almost the entire surface of one side of the substrate 1. The material of the substrate 1 is not particularly limited, and for example, a transparent substrate made of glass or plastic, a silicon wafer, or the like can be used.

  The multilayer film 2 preferably has an EUV reflectance of 65% or more. Currently, a film in which about 40 layers of two-layer films in which a Mo film and a Si film are stacked is used. Such a multilayer film 2 is formed by alternately laminating a Mo film and a Si film on the substrate 1 by using a magnetron sputtering method, an ion beam sputtering method, or the like. The multilayer film used in the present invention is used. The structure, material, and manufacturing method of the film 2 are not limited to this.

  Although the uppermost layer of the multilayer film may be referred to as a “capping film” as described above, the multilayer film 2 of the EUV exposure mask 10 according to the above embodiment includes such a “capping layer”. . However, when the capping layer is made of a material different from the multilayer film, the capping layer may be distinguished from the multilayer film. In such a case, the buffer film 3 of the EUV exposure mask 10 is It may be considered as a film also serving as a capping layer.

Next, the buffer film 3 is formed to cover the multilayer film 2, and the absorption film 3 is further formed to cover the buffer film 3. As described above, the buffer film 3 can be formed using Zr, Y, Si, or the like as a material. Currently proposed buffer films for EUV exposure masks include, but are not limited to, ZrSi ₂ , CrN, and SiO ₂ films.

  As the absorption film 4, a film made of a metal material such as Ta, Ti, Al, for example, a TaBN film, a TiN film, an aluminum-copper alloy (Al—Cu) film or the like has been proposed, but the material and structure are particularly limited. Instead, a plurality of types of films may be stacked to form the absorption film 4. The buffer film 3 and the absorption film 4 may be formed by any film forming method, for example, a sputtering method, a plasma CVD method, a vapor deposition method, etc., like the multilayer film 2.

  After the absorption film 4 is formed on the buffer film 3, the absorption film 4 is patterned. The patterning method of the absorption film 4 is not particularly limited, and for example, a method of applying a resist on the absorption film 4 to form a resist pattern and etching the absorption film 4 using this as a mask can be employed. The resist material and the resist pattern drawing method may be appropriately selected in consideration of the material of the absorption film 4 and the buffer film 3, and the electron beam drawing method and light exposure can be employed, for example. The etching method of the absorption film 4 is not particularly limited, and dry etching such as reactive ion etching or wet etching may be appropriately selected and used depending on the material of the absorption film 4 and the like.

  After the absorption film 4 is patterned, the resist is peeled off with a peeling liquid, whereby the EUV exposure mask 10 is obtained. However, in the obtained EUV exposure mask 10, as shown in FIG. 6A, the portion of the absorption film 4 that should originally be removed by etching may not be removed and may remain as a defective portion 6. is there. Therefore, a defect inspection for checking the defect portion 6 is performed by a method such as irradiating the EUV exposure mask 10 with DUV reflected light.

  After the defect portion 6 in which the absorption film 4 remains is specified by the defect inspection, a defect correction process for removing the defect portion 6 is performed. As a method of removing the defect portion 6, a method of irradiating the defect portion 6 with a focused ion beam can be used. By using the focused ion beam in this way, fine defects can be corrected. On the other hand, as shown in FIG. 6B, ions are implanted into the portion of the buffer film 3 adjacent to the defect portion 6 in the lower layer direction. A portion (corrected portion) 5 'is produced.

Therefore, as a film thinning step, the EUV exposure mask 10 on which the film thin portion 5 is formed by reducing the film thickness of the buffer film 3 of the correction portion 5 ′ into which ions are implanted by the above-described method. Obtained (see FIG. 6C). The film thickness of the buffer film 3 of the correcting portion 5 ′ may be adjusted so that a reflectance equivalent to the reflectance R3 of the peripheral region (uncorrected portion N) where ions are not implanted is obtained. Such a film thinning process is preferably performed when the ion concentration derived from the focused ion beam in the correction unit 5 ′ exceeds 1% of the ion concentration derived from the buffer film material. More specifically, in the case where Ga ions are used as the ion source, the buffer of the correction unit 5 ′ is used when the ion concentration of the correction unit 5 ′ is 5 × 10 ²⁰ (atoms / cm ³ ) or more. The film 3 may be thin. Alternatively, the film thinning process is performed when the reflectivity R7 of the correction unit 5 ′ is 5% or more lower than the reflectivity R3 of the non-correction unit N, using the reflectivity at the correction unit 5 ′ as a guide. May be.

  The EUV exposure mask 10 obtained through the film thinning process has been subjected to pattern defect correction by a focused ion beam, and the entire highly reflective region R including a portion into which ions have been implanted at the time of pattern defect correction. It has almost uniform reflectivity. Therefore, by installing such an EUV exposure mask 10 in an exposure apparatus and transferring the pattern, a device on which an initially planned pattern is formed can be manufactured.

  In addition, although the said embodiment demonstrated the case where the defect part 6 produced in the part adjacent to a horizontal direction with respect to the pattern of the absorption film 4, this invention does not adjoin the defect part 6 to the absorption film 4, but this invention. It is also applicable when it occurs. That is, when the defect part 6 has arisen between the patterns drawn by the absorption film 4, the focused ion beam is irradiated to the defect part 6, and the buffer of the part adjacent to this defect part 6 below is carried out. By reducing the thickness of the film 3, the reflectance in the high reflection region can be made uniform. In other words, the portion (the correction portion 5 ′) where the thickness of the buffer film 3 is reduced is adjacent to the defect portion 6 in the downward direction in the vertical direction.

  Next, a method for manufacturing a semiconductor integrated circuit including a pattern transfer process using the EUV exposure mask according to the present invention will be described. The present invention can be applied to semiconductor integrated circuit manufacturing by a photolithography method using EUV light as an exposure light source.

  That is, in the method of the present invention, a substrate such as a silicon wafer coated with a resist is placed on a wafer stage, and the EUV exposure mask is installed in a reflective exposure apparatus configured by combining a reflecting mirror. Then, the EUV light is irradiated from the light source to the EUV exposure mask through the reflecting mirror, and the EUV light is reflected by the EUV exposure mask and irradiated to the resist-coated substrate. By this pattern transfer process, the circuit pattern is transferred onto the substrate. The substrate on which the circuit pattern has been transferred is etched on the photosensitive portion (or non-photosensitive portion) by development, and then the resist is peeled off. In this way, a semiconductor integrated circuit is manufactured by forming a thin film on a substrate and repeating the resist coating, pattern transfer, development, etching, and resist stripping processes for applying a resist on the thin film.

Examples will be described below. First, a glass substrate was prepared as a substrate, and a Mo film and a Si film were formed as a pair on the substrate by an ion beam sputtering method to form 40 pairs of multilayer films. On this multilayer film, ZrSi ₂ was deposited to a thickness of 10 nm as a buffer film by magnetron sputtering. Next, as an absorption film, a film containing Ta as a main component was formed to a thickness of 100 nm by magnetron sputtering to obtain a mask blank for EUV exposure.

  Thereafter, an electron beam resist was applied on the absorption film, and a resist pattern was formed by an electron beam drawing method. Using this resist pattern as a mask, the absorption film was patterned by reactive ion etching, and then the resist was peeled off. Thereafter, defect inspection was performed using the contrast by the DUV reflected light. Thereafter, defects were corrected by a focused ion beam while taking care not to damage the multilayer film. When the defect was corrected, the buffer film was processed to a halfway depth by reducing the acceleration voltage and further irradiating the defect-corrected portion with a focused ion beam to reduce the film thickness. The thickness of the buffer film was set to such a thickness as to compensate for the decrease in reflectivity caused by Ga ions being implanted into the buffer film during defect correction, specifically 7.1 nm. .

  As a result, the reflectance R3 due to the multilayer film and the buffer film in the high reflectance region where the defect was not corrected was 66.5%, whereas the defect was corrected and the thickness of the buffer film was further reduced (see FIG. The portion corresponding to 5 of 3) has a reflectivity R8 of 66.3%.

  Further, for the purpose of comparison, when the defect can be corrected, the irradiation of the focused ion beam is stopped, and a portion (the portion corresponding to 5 ′ in FIG. 2) in which the film thickness remains 10 nm is created. R7 was measured. As a result of the measurement, the reflectance R7 of the portion where the defect was corrected and the thickness of the buffer film was not reduced was 60.7%.

  As described above, according to the present invention, it is possible to avoid a decrease in the reflectance of the portion where the pattern defect of the absorption film is corrected by the focused ion beam, and it is possible to obtain an EUV exposure mask in which minute defects are also corrected by the focused ion beam. . For this reason, the pattern is transferred to the substrate using this EUV exposure mask, the photoresist layer in an unnecessary portion in the development process is removed, and a pattern of the etching resist layer is formed on the substrate. A pattern faithful to the photomask pattern can be transferred onto the substrate by etching the layer to be processed using this pattern as a mask and then removing the pattern of the etching resist layer.

  The present invention can be used for manufacturing a reflective mask for EUV exposure and a semiconductor integrated circuit using the same.

It is a schematic diagram which shows the cross section of the mask for EUV exposure concerning one Embodiment of this invention. It is a figure for demonstrating the reflectance in a manufacturing process about the EUV mask of this invention. It is a figure for demonstrating the reflectance in a manufacturing process about the EUV mask of this invention. It is the characteristic view which computed the reflectance of the high reflective area | region with respect to the buffer film thickness. It is the characteristic figure which calculated the ion concentration distribution injected into a buffer film at the time of defect correction by a focused ion beam. It is explanatory drawing which shows a part of manufacturing process of the EUV mask of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... substrate 2 ... multilayer film 3 ... buffer film 4 ... absorption film 5 ... thin film part 5 '... correction part 6 ... defect part 10 ... EUV (extreme ultraviolet) exposure mask A ... Absorption area N ... Uncorrected area R ... High reflection area

Claims (3)

A substrate, a multilayer film reflecting EUV light formed on one surface of the substrate, a buffer film having transparency with respect to EUV light formed on the multilayer film, and a patterning formed on the buffer film An extreme ultraviolet exposure mask having an absorbed film formed,
After patterning the absorption film, the pattern defect portion remaining without patterning the absorption film is corrected by a focused ion beam,
A portion of the buffer film, wherein the ion concentration on the surface of the buffer film adjacent to the pattern defect is 5 × 10 ²⁰ (atoms / cm ³ ) or more , or is corrected by the focused ion beam the reflectance of the modified portion of the buffer film, the thickness of the modified portion of the buffer layer in the lower portion at least 5% than the reflectance of the unmodified portion of the buffer film which is not modified by the focused ion beam, the buffer method for producing extreme ultraviolet exposure mask characterized by Limak thinning by the unmodified portion of the film. 2. The extreme ultraviolet exposure mask according to claim 1, wherein the EUV light reflectance of the correction portion of the buffer film is substantially equal to the EUV light reflectance of the non-correction portion of the buffer film. Production method. The semiconductor integrated circuit according to claim 1 or extreme ultraviolet exposure mask manufactured by the method for producing extreme ultraviolet exposure mask according to any one of 2 installed in an exposure apparatus, and performs exposure and transfer by lithography Manufacturing method.