JP4942581B2 - X-ray mask manufacturing method - Google Patents

Description

  The present invention relates to an X-ray mask manufacturing method for manufacturing a high-contrast X-ray mask, and more particularly to an X-ray mask manufacturing method capable of manufacturing a high-accuracy high-contrast X-ray mask while suppressing the manufacturing period and manufacturing cost. Is.

  Conventionally, an X-ray lithography technique is known as a processing method for a three-dimensional microstructure. In this X-ray lithography technology, since an X-ray is exposed to an object through an X-ray mask, a thick X-ray absorber (thickness of about 10 to 20 μm) is used to improve the processing accuracy of the object. It is important to manufacture an X-ray mask having the following (hereinafter referred to as “high contrast X-ray mask”).

  As one of the manufacturing methods of this high contrast X-ray mask, there is a method of using a low contrast X-ray mask (X-ray absorber thickness of about 1 to 2 μm) as an intermediate mask. Specifically, a low-contrast intermediate mask is placed on the object, and a high-contrast X-ray mask is manufactured by X-ray exposure through the intermediate mask. Such an intermediate mask is manufactured by forming a shallow pattern on the material by electron beam lithography and forming a deep pattern by reactive ion etching (RIE) or the like.

  However, in such a method, since the intermediate mask is independent of the target object (material on which the high-contrast X-ray mask is formed), precise placement on the target object is required. Further, due to insufficient strength of the intermediate mask, thermal deformation is likely to occur in the intermediate mask during X-ray exposure. That is, the accuracy of the high contrast X-ray mask may be reduced due to the occurrence of misalignment or pattern distortion. In addition, the manufacturing cost of the intermediate mask having a pattern of submicron (0.1 μm) unit is high, and there is also a problem that the manufacturing period is long.

  For this reason, a method for manufacturing a high-contrast X-ray mask without using an intermediate mask independent of the object has been proposed. For example, Patent Document 1 discloses a technique for manufacturing a high-contrast X-ray mask by repeating an X-ray absorber plating process on a resist pattern formed on an X-ray transmission film.

  Patent Document 2 discloses that a thin film pattern of an X-ray absorber is formed on one side of a support film and a thick film resist is formed on the other side, and then the thick film resist is irradiated with X-rays from the thin film pattern side. A technique for manufacturing a high-contrast X-ray mask by embedding an X-ray absorber in a deep groove pattern formed in (1) is disclosed.

JP-A-5-152194 JP-A-8-273998

  However, in the technique of Patent Document 1, the cross-sectional shape of the X-ray absorber formed by repeating the plating process is not perpendicular to the X-ray transmission film. Therefore, the pattern accuracy of the formed X-ray absorber may be reduced. For this reason, there exists a problem that the precision of the manufactured high contrast X-ray mask falls.

  In the technique of Patent Document 2, since the support film itself on which the thin film pattern and the thick film resist are formed is thin and not rigid, the support film may be thermally deformed during X-ray exposure. Therefore, the exposed portions of the thick resist that are exposed in parallel in a thermally deformed state are not parallel to each other at room temperature. That is, like the method using an intermediate mask independent of the object, there is a possibility that pattern distortion may occur, and there is a problem that the accuracy of the manufactured high contrast X-ray mask is lowered.

  Therefore, how to manufacture a high-accuracy high-contrast X-ray mask while suppressing the manufacturing cost and the manufacturing period is a big problem.

  The present invention has been made to solve the above-described problems caused by the prior art, and an X-ray mask manufacturing method capable of manufacturing a high-precision high-contrast X-ray mask while suppressing manufacturing cost and manufacturing period. The purpose is to provide.

  In order to solve the above-described problems and achieve the object, the present invention is an X-ray mask manufacturing method for manufacturing a high-contrast X-ray mask, which comprises an X-ray resist layer and a first plating seed layer on a substrate. A laminated substrate in which a line mask forming layer is laminated, and an intermediate mask forming layer made up of a second plating seed layer and a UV resist layer that also serves as a UV light shielding for the X-ray mask forming layer is laminated on the X-ray mask forming layer And the high contrast X-ray mask is formed on the X-ray mask forming layer by using an intermediate mask formed on the intermediate mask forming layer.

  The present invention is also an X-ray mask manufacturing method for manufacturing a high-contrast X-ray mask, wherein an X-ray mask forming layer comprising a first plating seed layer and an X-ray resist layer is laminated on a substrate, and the X A laminating step of laminating a second plating seed layer also serving as a UV light shielding for the X-ray mask forming layer and an intermediate mask forming layer made of a UV resist layer on the line mask forming layer; and the X-ray mask in the laminating step A UV lithography process including UV exposure for the UV resist layer through a UV mask disposed on the intermediate mask forming layer side of the substrate on which the forming layer and the intermediate mask forming layer are laminated, and the second plating seed layer An intermediate mask forming step of forming an intermediate mask on the intermediate mask forming layer by a plating process on the intermediate mask forming step; An X-ray lithography process including an X-ray exposure for the X-ray resist layer through the intermediate mask formed on the intermediate mask formation layer and a plating process for the first plating seed layer are performed on the X-ray mask formation layer. An X-ray mask forming step of forming the high-contrast X-ray mask.

  In the present invention, the X-ray mask forming step further includes an intermediate mask removing step of removing the intermediate mask after the X-ray exposure.

  Also, in the present invention according to the above invention, the X-ray mask forming step includes a substrate removal step of removing the substrate after the plating process on the first plating seed layer, the membrane supporting the plating pattern, and the attachment of the frame. Is further included.

  According to the present invention, an X-ray mask forming layer composed of a first plating seed layer and an X-ray resist layer is laminated on a substrate, and the UV ray shielding function for the X-ray mask forming layer is provided on the X-ray mask forming layer. A laminated substrate on which an intermediate mask forming layer composed of a second plating seed layer also serving as a UV resist layer is prepared, and a high contrast X-ray is applied to the X-ray mask forming layer by using the intermediate mask formed on the intermediate mask forming layer. A mask was formed. That is, by forming the intermediate mask and the high-contrast X-ray mask on the substrate having a strength that prevents thermal deformation of the material forming each mask, it is not necessary to arrange the manufactured intermediate mask on the target object. When the mask is subjected to X-ray exposure, thermal deformation of the intermediate mask and the object can be prevented. Therefore, it is possible to produce a high-precision high-contrast X-ray mask while suppressing the production period and production cost.

  Further, according to the present invention, an X-ray mask forming layer comprising a first plating seed layer and an X-ray resist layer is laminated on a substrate, and UV shielding for the X-ray mask forming layer is performed on the X-ray mask forming layer. A UV mask disposed on the intermediate mask forming layer side of the substrate on which the X-ray mask forming layer and the intermediate mask forming layer are stacked by laminating an intermediate mask forming layer comprising a second plating seed layer and a UV resist layer that also serve as a role An intermediate mask is formed on the intermediate mask forming layer by a UV lithography process including UV exposure on the UV resist layer through and a plating process on the second plating seed layer, and the intermediate mask is formed on the intermediate mask forming layer. X-ray lithography process including X-ray exposure on the X-ray resist layer and plating process on the first plating seed layer. It was to form a high contrast X-ray mask to click forming layer.

  That is, a material for forming an intermediate mask and a high-contrast X-ray mask is laminated in advance on a substrate having a strength that prevents thermal deformation of the material forming each mask, and UV exposure, X By executing a series of mask forming processes such as line exposure, a high contrast X-ray mask as an object can be reliably manufactured. Moreover, it is not necessary to arrange the manufactured intermediate mask on the target object, and thermal deformation of the intermediate mask and the target object can be prevented during X-ray exposure of the intermediate mask. Therefore, it is possible to produce a high-precision high-contrast X-ray mask while suppressing the production period and production cost.

  According to the present invention, since the intermediate mask is removed after the X-ray exposure, the removal of the unnecessary intermediate mask is incorporated as one of a series of manufacturing procedures, so that the high contrast X-ray mask is obtained. There is an effect that can be manufactured reliably and easily.

  Further, according to the present invention, since the substrate is removed after the plating process for the first plating seed layer and the membrane and the frame for supporting the plating pattern are attached, the removal of the unnecessary substrate is a series of manufacture. By incorporating it as one of the procedures, it is possible to produce a high contrast X-ray mask reliably and easily.

  Exemplary embodiments of an X-ray mask manufacturing method according to the present invention will be described below in detail with reference to the accompanying drawings.

  First, characteristic points of the X-ray mask manufacturing method according to the present embodiment will be described with reference to FIG. FIG. 1 is a diagram showing characteristics of the X-ray mask manufacturing method according to the present embodiment. As shown in the figure, in the X-ray mask manufacturing method according to the present embodiment, a laminating process 1 in which an X-ray mask forming layer and an intermediate mask forming layer are stacked on a substrate, and an intermediate mask is formed on the intermediate mask forming layer. It consists of an intermediate mask forming step 2 and an X-ray mask forming step 3 for forming a high contrast X-ray mask on the X-ray mask forming layer.

  The stacking step 1 is a step of manufacturing a stacked substrate by stacking an X-ray mask forming layer and an intermediate mask forming layer on a substrate such as a Si (silicon) substrate. The X-ray mask forming layer includes an X-ray resist layer on which a pattern is formed by X-ray exposure, and the intermediate mask forming layer includes a UV resist layer on which a pattern is formed by UV (ultraviolet) exposure.

  In the following description, the substrate direction in the laminated substrate is referred to as “substrate side”, and the intermediate mask formation layer direction is referred to as “exposure side”. Note that UV (ultraviolet) exposure and X-ray exposure are performed from the exposure side toward the substrate side.

  In the X-ray mask manufacturing method according to the present embodiment, by using the stacked substrate manufactured in the stacking step 1, the intermediate mask and the high contrast X-ray mask for forming the high contrast X-ray mask are used as the same stacked substrate. It was decided to form on top. For this reason, it is not necessary to arrange a separately manufactured intermediate mask on the material of the high contrast X-ray mask.

  Therefore, misalignment due to the intermediate mask arrangement can be prevented. Further, since the intermediate mask and the high-contrast X-ray mask are formed on a substrate having a strength that prevents thermal deformation due to X-ray exposure, the intermediate mask and the high-contrast X-ray mask can prevent high-precision deformation by preventing thermal deformation. A contrast X-ray mask can be manufactured.

  In the intermediate mask forming step 2, the laminated substrate manufactured in the laminating step 1 is subjected to UV exposure using a UV mask having a micron unit (1 μm) or submicron unit (0.1 μm) pattern to form an intermediate mask. A step of forming an intermediate mask in the layer;

  Specifically, this intermediate mask is formed by plating an X-ray absorber on the opening of the pattern transferred to the UV resist by UV exposure and development. For example, Au (gold) is used as the X-ray absorber. The plating thickness of the intermediate mask is about 1 μm. Thus, in the X-ray mask manufacturing method according to the present embodiment, the intermediate mask is formed immediately above the X-ray mask formation layer.

  The X-ray mask forming step 3 is a step of forming a high-contrast X-ray mask on the X-ray mask forming layer by performing X-ray exposure on the intermediate mask formed in the intermediate mask forming step 2.

  Specifically, in the X-ray mask forming step 3, the X-ray is strong enough to be absorbed by 1 μm-thick Au (gold) in the intermediate mask and to expose, for example, a 15 μm-thick X-ray resist layer. Strength is adjusted. Then, the absorber pattern of the high contrast X-ray mask is formed by plating the X-ray absorber on the opening portion of the pattern transferred to the X-ray resist layer through the intermediate mask. The intermediate mask is removed when the X-ray resist layer is developed. Then, a membrane that supports the absorber pattern is applied to the absorber pattern of the formed X-ray mask, and after attaching the frame, the substrate is removed to complete a high-contrast X-ray mask.

  For example, Au (gold) is used as the X-ray absorber. The plating thickness is about 10 μm. Further, the X-ray resist is removed after Au (gold) plating, and a polyimide (membrane material) is applied after the X-ray resist is removed to protect the Au (gold) pattern.

  As described above, since the intermediate mask forming step 2 and the X-ray mask forming step 3 are performed on the laminated substrate on which the materials are previously laminated, the high-contrast X-ray mask that is the final target is reliably and easily manufactured. be able to.

  Next, the process flow of the X-ray mask manufacturing method according to the present embodiment will be described in more detail with reference to FIGS. FIG. 2 is a flowchart showing an outline of the X-ray mask manufacturing method according to the present embodiment.

  As shown in the figure, a laminating process 1 is performed in which an X-ray mask forming layer and an intermediate mask forming layer are stacked on a substrate such as a Si (silicon) substrate (step S101). Subsequently, an intermediate mask forming process 2 is performed in which an intermediate mask is formed on the intermediate mask forming layer on the substrate by UV lithography using a UV mask and plating (Step S102). Then, an X-ray mask formation step 3 is performed in which an X-ray mask (high contrast X-ray mask) absorber pattern is formed on the X-ray mask formation layer on the substrate by an X-ray lithography process and a plating process using an intermediate mask. (Step S103). In the X-ray mask forming step 3 in step S103, a membrane supporting the absorber pattern is applied to the absorber pattern of the formed X-ray mask, and the substrate is removed after attaching the frame. A process is included.

  As described above, the materials of the intermediate mask and the high-contrast X-ray mask are laminated on a substrate having a strength that prevents the materials from being thermally deformed, and the intermediate mask and the high-contrast X-ray mask are placed in the laminated substrate. Therefore, it is possible to manufacture a high-contrast high-contrast X-ray mask while suppressing the manufacturing period and manufacturing cost.

  Next, the configuration of the multilayer substrate used in the X-ray mask manufacturing method according to the present embodiment will be described with reference to FIG. FIG. 3 is a diagram illustrating the configuration of the multilayer substrate 10. As shown in the figure, the laminated substrate 10 is formed by sequentially laminating a plating seed layer A12, an X-ray resist layer 13, a plating seed layer B14, and a UV (ultraviolet) negative resist layer 15 on a Si (silicon) substrate 11. It is formed. The plating seed layer A12 includes a Cr (chrome) layer 12a and a Pd (palladium) layer 12b, and the plating seed layer B14 includes a Cr (chrome) layer 14a and a Pd (palladium) layer 14b.

  3 and FIG. 1, the Si substrate 11 in FIG. 3 is the substrate in FIG. 1, and the plating seed layer A12 and the X-ray resist layer 13 in FIG. 3 are the X-ray mask formation layers in FIG. The plating seed layer B14 and the UV negative resist layer 15 in FIG. 3 correspond to the intermediate mask forming layer in FIG.

  The Si substrate 11 is a substrate for laminating the plating seed layer A12 to the UV negative resist layer 15, and has a strength to prevent the plating seed layer A12 to the UV negative resist layer 15 from being thermally deformed by X-ray exposure. ing. In this embodiment, Si (silicon) is used as the material of the substrate. However, as long as the substrate has a smooth surface, a substrate made of another material may be used. For example, a glass substrate or a metal substrate using a process-matched metal can be used.

  The plating seed layer A12 is formed by a sputtering film forming method, and is obtained by forming the Cr layer 12a with a thickness of 1000 to 10000 mm and subsequently forming the Pd layer 12b with a thickness of 100 to 1000 mm. Here, the Cr layer 12a is a layer for obtaining adhesion with the Si substrate 11, and the Pd layer 12b is a seed layer for Au (gold) plating described later.

  In this embodiment, the plating seed layer A12 is a combination of Pd (palladium) / Cr (chrome), but other combinations may be used. For example, Pt (platinum) / Cr (chrome), Ni (nickel) / Cr (chrome), Au (gold) / Cr (chrome), Pd (palladium) / Ti (titanium), Pt (platinum) / Ti (titanium) ), Ni (nickel) / Ti (titanium), Au (gold) / Ti (titanium), and the like can be used.

  The X-ray resist layer 13 is a layer for forming a high contrast X-ray mask. The material of the X-ray resist layer 13 is preferably KMPR (registered trademark), which is a negative resist manufactured by Kayaku Microchem.

  The plating seed layer B14 is formed by a sputtering film forming method, and is obtained by forming the Cr layer 14a with a thickness of 500 to 2000 mm, and subsequently forming the Pd layer 14b with a thickness of 100 to 1000 mm. Here, the Cr layer 14a is a layer for obtaining adhesion with the X-ray resist layer 13, and the Pd layer 14b is a seed layer for Au (gold) plating described later. The plating seed layer B14 also serves as a light shielding layer that shields the X-ray resist layer 13 from UV exposure.

  In this embodiment, the plating seed layer B14 is a combination of Pd (palladium) / Cr (chrome), but other combinations may be used. For example, Pt (platinum) / Cr (chrome), Ni (nickel) / Cr (chrome), Au (gold) / Cr (chrome), Pd (palladium) / Ti (titanium), Pt (platinum) / Ti (titanium) ), Ni (nickel) / Ti (titanium), Au (gold) / Ti (titanium), and the like can be used.

  The UV negative resist layer 15 is a layer for forming an intermediate mask. As a material of the UV negative resist layer 15, AZ (registered trademark) 5200 series manufactured by AZ Electronic Materials is suitable. In this embodiment, a negative resist is used, but this is because a negative resist is more likely to form a fine pattern. However, when an inverted UV mask is used, a positive resist may be used.

  Next, the detailed procedure of the intermediate mask forming step 2 for forming the intermediate mask on the intermediate mask forming layer (plating seed layer B14 and UV negative resist layer 15) of the multilayer substrate 10 described with reference to FIG. 5 will be described. 4 and 5 are views showing an intermediate mask formation step 2 and 1 thereof.

  As shown in FIGS. 4 and 5, the intermediate mask forming step 2 includes “(2) UV exposure” and “(3) development after“ (1) film formation ”corresponding to the stacking step 1. ”,“ (4) Au plating ”,“ (5) resist removal ”and“ (6) plating seed layer B etching ”in order, the intermediate mask formation layer (plating seed layer B14 and UV negative resist) A step of forming an intermediate mask in layer 15).

  As shown in “(1) Deposition of each layer” in FIG. 4, when the laminated substrate 10 is manufactured in the lamination step 1, as shown in “(2) UV exposure” in FIG. 4, Cr (chrome) UV exposure is performed through the UV mask on which the pattern is formed. Specifically, UV (ultraviolet) is irradiated from the exposure side of the laminated substrate 10 using a mask alignment apparatus, and only the UV negative resist layer 15 is exposed to UV (ultraviolet). At this time, since UV (ultraviolet rays) is blocked by the metal film of the plating seed layer B14, the underlying X-ray resist layer 13 is not exposed.

  Subsequently, as shown in “(3) Development” in FIG. 4, the UV negative resist layer 15 is developed. Specifically, development is performed so that only the photosensitive portion of the UV negative resist layer 15 remains as a pattern. The UV negative resist layer 15 is formed to be thicker than the thickness of the Au layer 21 shown in “(4) Au plating” of FIG.

  Then, as shown in “(4) Au plating” in FIG. 4, Au (gold) plating with a thickness of about 1 μm is performed on the opening of the UV negative resist layer 15 to form the Au layer 21. It is important that the thickness of the Au layer 21 be a thickness that can sufficiently absorb X-rays when the X-ray resist layer 13 described later is exposed to X-rays.

  Subsequently, as shown in “(5) Resist removal” in FIG. 5, the UV negative resist in the UV negative resist layer 15 that has become unnecessary is removed, and “(6) plating seed layer B etching” in FIG. As shown, the Cr (chrome) layer 14a and the Pd (palladium) layer 14b are etched using the pattern of the Au layer 21 as a mask.

  Note that the Pd (palladium) layer 14b / Cr (chrome) layer 14a has a thin thickness of, for example, 500 Å / 100 Å, so that X-ray absorption is small. Therefore, when there is no problem in the X-ray exposure on the X-ray resist layer 13, the etching process itself of the plating seed layer B14 can be omitted. The same applies to a combination of Pt (platinum) / Cr (chrome), Ni (nickel) / Cr (chrome), or the like.

  As described above, by performing “(2) UV exposure” to “(6) plating seed layer B etching” shown in FIGS. 4 to 5, intermediate mask formation layers (plating seed layer B 14 and UV negative resist layer 15 are formed. ) Is formed with an intermediate mask.

  Next, a detailed procedure of the X-ray mask forming step 3 for forming a high-contrast X-ray mask on the X-ray mask forming layer (plating seed layer A12 and X-ray resist layer 13) of the multilayer substrate 10 described with reference to FIG. Will be described with reference to FIGS. FIGS. 6 and 7 are views showing X-ray mask forming step 3 1 and 2.

  In addition, as shown in FIGS. 6 and 7, the X-ray mask forming step 3 includes “(7) X-ray exposure”, “(8) development”, “(9) Au plating”, “(10) resist”. The steps of “removal”, “(11) polyimide application”, “(12) frame adhesion” and “(13) plating seed layer A etching (substrate peeling)” are sequentially performed, so that the X-ray mask formation layer (plating seed) This is a step of forming a high contrast X-ray mask on the layer A12 and the X-ray resist layer 13).

  As shown in “(7) X-ray exposure” in FIG. 6, X-ray exposure is performed through the intermediate mask formed in the intermediate mask forming step 2. Specifically, X-rays obtained by a synchrotron radiation (SR) apparatus are irradiated from the exposure side of the laminated substrate 10 and the X-ray resist layer 13 is X-ray exposed. Note that since the intermediate mask is already formed immediately above the X-ray resist layer 13, it is not necessary to perform mask alignment as in the case of using an independent intermediate mask.

  Further, the X-ray intensity at the time of X-ray exposure is adjusted to an intensity at which the X-ray resist layer 13 can be patterned with good contrast. Specifically, the X-ray intensity is set such that the X-ray resist layer 13 is sufficiently exposed in the thickness direction and is sufficiently absorbed by the Au layer 21. For example, the LOWPASS beam (1 to 3.5 KeV) of the New Val beam line BL-2 is suitable.

  Subsequently, as shown in “(8) Development” in FIG. 6, the X-ray resist layer 13 is developed. Specifically, since KMPR (registered trademark) used as the material of the X-ray resist layer 13 is a negative resist, only the portion irradiated with X-rays by the development process remains. The X-ray resist layer 13 is formed so as to be thicker than the Au layer 22 shown in “(9) Au plating” of FIG.

  Then, as shown in “(9) Au plating” in FIG. 6, Au (gold) plating with a thickness of about 10 μm is performed on the opening of the X-ray resist layer 13 to form the Au layer 22. Subsequently, as shown in “(10) Resist removal” in FIG. 6, the X-ray resist of the X-ray resist layer 13 that is no longer necessary is removed, and as shown in “(11) Polyimide application” in FIG. 7. Next, polyimide that supports the pattern of the Au layer 22 is applied. In this embodiment, polyimide is used as the membrane material, but an epoxy resin may be used.

  Subsequently, as shown in “(12) Frame bonding” in FIG. 7, for example, the frame 32 made of stainless steel is peeled off in “(13) Plating seed layer A etching (substrate peeling)” in FIG. 7. It is fixed with an adhesive 31 or double-sided tape that is resistant to. As the adhesive 31, Araldite (registered trademark) or the like can be used.

  Then, as shown in “(13) Plating seed layer A etching (substrate peeling)” in FIG. 7, the plating seed layer A12 is etched. Specifically, the plating seed layer A12 is etched using a solution that can etch only the Cr layer 12a, only the Pd layer 12b, or both the Cr layer 12a and the Pd layer 12b of the plating seed layer A12, and the Si substrate 11 To peel off.

  When only the Cr layer 12a is etched, the Pd layer 12b remains on the lower surface of the high-contrast X-ray mask, but the Pd layer 12b is thin and has a small amount of X-ray absorption. There is no problem in the function as a line mask.

  Next, modified examples of the intermediate mask forming step 2 and the X-ray mask forming step 3 described with reference to FIGS. 4 to 7 will be described with reference to FIGS. FIG. 8 and FIG. 9 are diagrams showing an X-ray mask forming step 3 and 1 when the intermediate mask forming step 2 is simplified. In the following description, portions different from the intermediate mask formation step 2 or the X-ray mask formation step 3 in FIGS. 4 to 7 will be mainly described, and description of common portions will be omitted or only a brief description. And

  8 and FIG. 9 omits “(5) resist removal” and “(6) plating seed layer B etching” in the intermediate mask formation step 2 shown in FIG. 4 and FIG. 4 shows an X-ray mask formation step 3 in the case where the laminated substrate 10 in the state shown in “(4) Au plating” is used as an intermediate mask.

  The X-ray mask forming step 3 ("(5A) X-ray exposure" to "(12A) plating seed etching (substrate peeling)") shown in FIGS. 8 and 9 is performed in the intermediate mask forming step shown in FIG. This is performed subsequent to “(4) Au plating” in 2.

  First, as shown in “(5A) X-ray exposure” in FIG. 8, X-ray exposure is performed on the laminated substrate 10 on which the Au layer 21 is formed (see “(4) Au plating” in FIG. 4). Is done. The X-ray exposure procedure is the same as “(7) X-ray exposure” in FIG.

  Subsequently, as shown in “(6A) Plating seed layer B etching” in FIG. 8, the plating seed layer B14 is etched. Specifically, the plating seed layer B14 is etched using a solution that can etch only the Cr layer 14a, only the Pd layer 14b, or both the Cr layer 14a and the Pd layer 14b of the plating seed layer B14, and the Au layer 21 To peel off. The X-ray resist layer 13 has an unexposed portion 13a formed by X-ray absorption by an intermediate mask in “(5A) X-ray exposure” in FIG.

  Then, as shown in “(7A) development” in FIG. 8, the X-ray resist layer 13 is developed. By this development processing, the unexposed portion 13a is removed. 8 and 9, "(8A) Au plating", "(9A) resist removal", "(10A) polyimide coating", "(11A) frame adhesion" and "(12A) plating seed layer A" Each procedure of “etching (substrate peeling)” is performed. These procedures are “(9) Au plating”, “(10) resist removal”, “(11) polyimide” shown in FIG. 6 and FIG. 7, respectively. Since it is the same as each procedure of “application”, “(12) frame adhesion”, and “(13) plating seed layer A etching (substrate peeling)”, the description is omitted.

  Note that the Pd layer 12b is left below the high-contrast X-ray mask shown in “(12A) plating seed layer A etching” in FIG. In this way, the process is more simplified when the Pd layer 12b is left than when the Pd layer 12b is removed. Even when the Pd layer 12b is left, there is a problem in the function as a high contrast X-ray mask because the Pd layer 12b is thin and the amount of X-ray absorption is small as described above. Absent.

  As described above, according to this embodiment, an X-ray mask forming layer made up of the first plating seed layer and the X-ray resist layer is laminated on the substrate, and the role of UV shielding is provided on the X-ray mask forming layer. An intermediate mask forming layer composed of a second plating seed layer also serving as a UV resist layer was stacked.

  Then, a UV lithography process including UV exposure for the UV resist layer through the UV mask disposed on the intermediate mask forming layer side of the substrate on which the X-ray mask forming layer and the intermediate mask forming layer are laminated, and the second plating seed An intermediate mask was formed on the intermediate mask forming layer by plating the layer.

  Subsequently, the X-ray mask forming layer has high contrast by an X-ray lithography process including an X-ray exposure to the X-ray resist layer through the intermediate mask formed on the intermediate mask forming layer and a plating process on the first plating seed layer. An X-ray mask was formed.

  Therefore, a material for forming an intermediate mask and a high-contrast X-ray mask is laminated in advance on a substrate having a strength that prevents thermal deformation of the material forming each mask, and UV exposure, X By executing a series of mask forming steps such as line exposure, a high-contrast X-ray mask that is an object can be reliably manufactured. Moreover, it is not necessary to arrange the manufactured intermediate mask on the target object, and thermal deformation of the intermediate mask and the target object can be prevented during X-ray exposure of the intermediate mask.

  As described above, the X-ray mask manufacturing method according to the present invention is useful for manufacturing a high-accuracy high-contrast X-ray mask while suppressing the manufacturing period and manufacturing cost. Suitable for the manufacture of contrast X-ray masks.

It is a figure which shows the characteristic of the X-ray mask manufacturing method based on a present Example. It is a flowchart which shows the outline | summary of the X-ray mask manufacturing method based on a present Example. It is a figure which shows the structure of a laminated substrate. It is a figure which shows the intermediate | middle mask formation process 1st. It is a figure which shows the intermediate | middle mask formation process 2nd. It is a figure which shows the X-ray mask formation process 1st. It is a figure which shows the X-ray mask formation process 2nd. It is a figure which shows the X-ray mask formation process 1 in the case of simplifying an intermediate mask formation process. It is a figure which shows the X-ray mask formation process 2 in the case of simplifying an intermediate mask formation process.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Lamination | stacking process 2 Intermediate | middle mask formation process 3 X-ray mask formation process 10 Laminated substrate 11 Si substrate 12 Plating seed layer A
12a Cr layer 12b Pd layer 13 X-ray resist layer 13a Unexposed portion 14 Plating seed layer B
14a Cr layer 14b Pd layer 15 UV negative resist layer 21 Au layer 22 Au layer 23 Polyimide 31 Adhesive 32 Frame

Claims (4)

An X-ray mask manufacturing method for manufacturing a high-contrast X-ray mask,
An X-ray mask forming layer composed of a first plating seed layer and an X-ray resist layer is laminated on the substrate, and a second plating that also serves as a UV light shielding for the X-ray mask forming layer on the X-ray mask forming layer A laminated substrate in which an intermediate mask forming layer composed of a seed layer and a UV resist layer is laminated is prepared, and the high contrast X-ray mask is applied to the X-ray mask forming layer by using the intermediate mask formed on the intermediate mask forming layer. An X-ray mask manufacturing method comprising forming the X-ray mask. An X-ray mask manufacturing method for manufacturing a high-contrast X-ray mask,
An X-ray mask forming layer composed of a first plating seed layer and an X-ray resist layer is laminated on the substrate, and a second plating that also serves as a UV light shielding for the X-ray mask forming layer on the X-ray mask forming layer A laminating step of laminating an intermediate mask forming layer composed of a seed layer and a UV resist layer;
UV lithography processing including UV exposure to the UV resist layer through a UV mask disposed on the intermediate mask forming layer side of the substrate on which the X-ray mask forming layer and the intermediate mask forming layer are stacked in the stacking step And an intermediate mask forming step of forming an intermediate mask on the intermediate mask forming layer by plating on the second plating seed layer;
In the intermediate mask formation step, the X-ray lithography process including X-ray exposure to the X-ray resist layer through the intermediate mask formed on the intermediate mask formation layer and the plating process on the first plating seed layer are performed. An X-ray mask manufacturing method comprising: forming an X-ray mask on the X-ray mask forming layer. The X-ray mask forming step includes
The X-ray mask manufacturing method according to claim 2, further comprising an intermediate mask removing step of removing the intermediate mask after the X-ray exposure. The X-ray mask forming step includes
4. The X-ray according to claim 2, further comprising a substrate removing step of removing the substrate after the plating process on the first plating seed layer, the membrane supporting the plating pattern, and the attachment of the frame. 5. Mask manufacturing method.

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