JP4945503B2 - Probe microscope, insulation failure inspection device, insulation failure inspection method - Google Patents

Description

  The present invention relates to a method and an apparatus for detecting an insulation failure of a sample made of an insulator or a dielectric and a conductor. In particular, the present invention relates to a probe microscope or an inspection apparatus using the same.

  In recent years, the multi-functionalization of semiconductor integrated circuit devices has progressed, and it has been promoted to create a plurality of circuits on one semiconductor chip. Further, in order to reduce the manufacturing cost of the semiconductor integrated circuit device, it has been promoted to miniaturize semiconductor elements and wirings, to reduce the area of the semiconductor chip, and to increase the number of obtained chips per semiconductor wafer. . Such an electronic device has a configuration in which an insulator or a dielectric and a conductor are stacked or adjacent to each other at a minute interval. In the junction between the insulator or dielectric and the conductor, migration may occur due to the combined action of the surrounding environment and the material, which may cause a short circuit of the electronic circuit. Migration evaluation is important in evaluating the reliability of electronic devices.

  As a conventional insulation evaluation method, there is HAST (Highly Accelerated Temperature and Humidity Stress Test) (Non-Patent Document 1). The wiring substrate is left in the test chamber at a constant temperature, humidity, and constant pressure, and voltage is continuously applied between the two conductors. A voltage is applied between the same conductors, the current flowing at that time is detected, and an insulation resistance is obtained. Alternatively, an insulation resistance is obtained by sandwiching a known resistance between the same conductors and measuring the voltage therebetween. Evaluation is based on the time when insulation resistance decreases and insulation failure occurs. This is a life test that can be evaluated for a short period of time.

  Further, there is a steady temperature and humidity test (Patent Document 2) as an environmental test method for printed wiring boards. The wiring substrate is left in the test chamber at a constant temperature and humidity, and voltage is continuously applied between the two conductors. A voltage is applied between the same conductors, and the current flowing at that time is detected and used as an insulation resistance. Alternatively, an insulation resistance is obtained by sandwiching a known resistance between the same conductors and measuring the voltage therebetween. Evaluation is based on the time when insulation resistance decreases and insulation failure occurs.

Japan Electronic Circuits Association, JPCA Standard, Printed Wiring Board Environmental Test Method, JPCA-ET08-2007 Japan Electronic Circuits Association, JPCA Standard, Printed Circuit Board Environmental Test Method, JPCA-ET02-04-2007

  In any of the above-described conventional methods, in any of the test methods, the defective portion is taken out from the test tank after the test is completed, and appearance observation using a stereomicroscope or SEM observation is performed to confirm the occurrence of migration. Therefore, it is difficult to observe the location where migration has occurred on the spot.

  Accordingly, an object of the present invention is to provide a method and an apparatus for evaluating the insulation reliability of an electronic device material in which an insulator or a dielectric and a conductor are adjacent or laminated, based on the above-described conventional technology. It is another object of the present invention to provide a probe microscope capable of investigating the location where a sample having fine wiring or the like is destroyed and the cause of the destruction.

  A feature of the present invention for solving the above-described problems resides in a probe microscope having a voltage application device that applies a voltage between two desired points in a sample. In particular, it has two voltage application devices, one is a voltage application device that applies a voltage between the probe and an electrode disposed through the sample, and the other is a desired two points in the sample. Used as a voltage application device for applying a voltage between them.

  Further, a measurement environment control device for applying these voltages while controlling the measurement environment of the sample to a specific environment may be provided. The measurement environment control device can be variably controlled in the atmosphere, vacuum, liquid, gas, or humidity. Although the kind of gas is not specifically limited, For example, nitrogen gas, hydrogen gas, oxygen gas, dry air, argon gas, or these mixed gas can be used. During the constant humidity, the humidity or the constant temperature and humidity device that creates a gas atmosphere with a constant humidity while stirring the air or the aforementioned gas in water is provided. In addition, the ambient temperature can be variably controlled to a specific temperature from a low temperature to a high temperature. Further, the internal pressure of the atmospheric gas can be variably controlled from a low pressure to an increased pressure. As a result, migration is generated by applying a voltage between two desired points of the conductor in a specific temperature and / or humidity atmosphere, and the current flowing between the probe and the electrode is detected. It is possible to specify the migration occurrence location.

  As the voltage application device, any one of a pulse method and a floating method can be selected, and application conditions can be controlled by a combination thereof. Both the pulse method and the floating method can be applied to the voltage application device such as the applied time interval, pause time, voltage value control, voltage direction, that is, positive / negative selection, cycle test, and other condition control. .

  In the probe microscope of the present invention, when observing a sample in which a conductor and an insulator and / or dielectric are laminated or adjacent to each other, the insulator and / or dielectric is brought into contact with an electrode, and a desired two of conductors are obtained. It is used as an insulation failure inspection device characterized by having a step of applying a voltage between points and a step of detecting a current flowing between the probe and the electrode by applying a voltage between the probe and the electrode. You can also.

  Applied voltage switching means for setting / switching between which conductors a voltage is applied when there are two or more conductors that are stacked with insulators and / or dielectrics in the sample or adjacent to each other Can be provided. For example, a control unit having a switching mechanism that can be connected to a plurality of conductors and select a conductor to which a voltage is applied can be provided. When insulators and / or dielectrics and conductors are stacked in a sample, for example, in a build-up substrate, etc., a conductor in which terminals are connected to a plurality of conductors to make the voltage polarity positive The conductor to be negative can be selected. This control unit has a mechanism capable of selecting a conductor to be connected to the electrode. Thus, it is not necessary to separately connect the conductor connected to the electrode and the conductor applying a voltage in the sample. It is also possible to select the same conductor to be connected to the electrode and the conductor to apply a voltage in the sample.

  The insulation failure inspection apparatus of the present invention includes a mechanism similar to that of a probe microscope. That is, a voltage application device that applies a voltage between the probe and the electrode, a means for obtaining a surface shape image of the sample, a means for creating a profile by comparing the surface shape image from the resistance, and a defect content of the sample from the profile And a voltage application device that applies a voltage between two desired points in the sample, and identifies a defective portion while applying a voltage between the two desired points in the sample.

  An atomic force microscope (AFM) can be used for the inspection apparatus of the present invention. An atomic force microscope (AFM) is a device that measures a shape image while bringing a probe into contact with the surface, and scans a minute probe in parallel with the sample surface, and at the same time follows the irregularities of the sample surface. In this way, the probe is moved in the direction perpendicular to the sample surface, and the minute structure on the sample surface is observed. Simultaneously with the shape measurement, by applying a voltage between the probe and the electrode and detecting a current flowing between the probe and the electrode, it is possible to measure the resistance at an arbitrary position of the sample.

  Such a surface shape measurement device such as AFM is equipped with a voltage application device that applies a voltage between two desired points in the sample, thereby applying a bias voltage between two conductors in the material to generate migration. The migration property of the electronic device material is evaluated.

  In the portion where migration occurs, a local drop in resistance occurs. In order to specify the location where the migration has occurred, a voltage is applied between the probe and the electrode, the current flowing between the probe and the electrode is detected, and a two-dimensional mapping is performed as a current image. If the shape image and the current image are superimposed, the location where the migration has occurred can be specified. Furthermore, a defective portion can be displayed by providing a specific threshold value for the current and mapping a portion where a current value equal to or greater than the threshold value flows as a migration image. Further, the degree of failure can be estimated by obtaining the area of the defective portion or the integrated current amount.

  According to the sample evaluation method of the present invention, any voltage of the sample is detected by applying a voltage between the probe and the electrode and detecting a current flowing between the probe and the electrode by the probe microscope or the insulation defect inspection apparatus. This is a method of observing defects and migration resistance of a sample by measuring the resistance at a location. ADVANTAGE OF THE INVENTION According to this invention, the method which can detect the generation | occurrence | production location of a migration and the test | inspection method of an insulation defect can be provided, and the insulation reliability of an electronic device etc. can be aimed at.

  According to the present invention, it is possible to detect the occurrence of migration of electronic device material. Moreover, an insulation defect inspection apparatus can be provided.

  Hereinafter, the present invention will be described with specific examples.

  The inventors of the present application examined the migration resistance by leaving the sample in high temperature and high humidity and applying a bias voltage between two desired points in the sample. In particular, if the starting point at which migration occurs can be observed in-situ, it can be specified whether it is due to the presence of impurities derived from the sample, due to the design, or due to the composition of the material. If these are known, it is possible to optimize the composition of the electronic device material, the additive compounding ratio, the process conditions, the design, and the like. As a result, for example, inspection methods for semiconductor wiring boards and printed wiring boards, solder inspection methods, plating inspection methods, via processing inspection methods, electric wire inspection methods, composites of conductors and insulators, or dielectrics It can be used for inspection methods of materials, and as a result, it can contribute to further high reliability of electronic devices and electronic device materials. The inventors of the present application paid attention to a scanning probe microscope.

  A probe microscope having a probe and an electrode arranged via a sample, and a measuring device for detecting a current flowing in the sample between the probe and the electrode by applying a voltage between the probe and the electrode, Apply voltage between two points. At this time, migration occurs by raising the ambient environmental temperature, raising the humidity, raising the water vapor pressure, or exposing to such an environment for a long time. By detecting the location where the migration has occurred, the cause of the insulation failure can be identified. For example, when migration is concentrated on a specific additive, the additive is a cause of insulation failure. In addition, when migration occurs due to a wiring width interval or a design, the migration is concentrated at a specific design or at a specific wiring interval. Further, when the cause is the size of the conductor or the dispersion interval, the migration is concentrated on the conductor of a specific size and the dispersion distance of the specific interval. The occurrence rate of the migration starting point depending on the test time may be evaluated to give superiority or inferiority of the insulating property. In addition, the superiority or inferiority of the insulating property can be determined by the magnitude of the flowing current value. Conventionally, dismantling was performed when the insulation resistance was lowered, and the appearance was inspected. Therefore, it was impossible to know where the migration started, that is, the starting point. In the present invention, it is possible to continuously observe before the occurrence of migration until it gradually begins to occur, and it is possible to quantitatively diagnose insulation failure from the analysis of the current image. In this way, it can be used as an inspection apparatus for determining the insulation reliability of electronic devices and electronic device materials.

  The insulation failure inspection method of the present invention can also be applied to LSI wiring boards, printed wiring boards, and the like. The demand for higher functionality and higher performance of electronic devices has affected the design of printed wiring boards, making it difficult to guarantee insulation reliability. Among the forms of migration, CAF (Conductive Anodic Filaments) is considered that the design of the through-hole, the material of the core base material, the processing conditions of the through-through hole, etc. affect the insulation. In a motherboard represented by a rigid printed wiring board and an evaluation board for burn-in, there is a possibility that a problem occurs in insulation between through-hole walls due to an increase in socket mounting density. In addition, the occurrence of migration varies depending on the type of electronic device material such as plating, solder, flux, element body, and package material. In particular, it is considered that the occurrence of migration changes due to the Pb-free.

  In addition, as a package required for mounting FPD (Flat Panel Display) driver ICs, FPC (Flexible Printed Circuit), which has features such as easy multi-output and high degree of design freedom for the mounted electronic devices, etc. Is often used. FPC includes a two-layer structure of TCP (Tape Carrier Package) and COF (Chip on Film). In particular, the phenomenon of COF is complicated with respect to the insulation reliability of the substrate. The insulation failure inspection method of the present invention can be applied to such products.

  In addition, as electronic devices become more sophisticated, materials in which minute size particles or fiber conductors are dispersed in an insulator or dielectric have been developed for various applications. The insulation failure inspection method of the present invention can also be applied to a sample having a matrix structure in which such insulators or dielectrics and conductors are stacked or adjacent to each other at a minute interval. For example, a heat radiating resin, a heat resistant resin, a conductive resin, or a film thereof. In such a material, it is necessary for the insulator or the dielectric to continue to maintain the insulation reliability even in a severe use environment.

  Electric wires, underwater cables, and the like have an adjacent structure of a conductor and an insulator in which the surface of the cable is coated with an insulating film. These cables can be used under special circumstances such as the surrounding environment being underwater, high temperature, or electric field action. As a result, a water tree (a kind of migration) is generated, which causes troubles such as short circuit and discharge. The insulation failure inspection method of the present invention can be applied to such a cable.

  Hereinafter, the embodiments will be described in detail with reference to the drawings.

  In Example 1, a first embodiment of an inspection apparatus that detects an insulation failure of a sample using mainly the mechanism of a scanning probe microscope will be described. FIG. 1 is a diagram illustrating this example.

  The inspection apparatus of the present embodiment includes a measurement environment control apparatus 1 for creating a constant environment, and an environment control cell 2 connected to the measurement environment control apparatus 1 and capable of holding a sample in the constant environment. On the vibration isolation table 3, the environmental control cell 2 and a moving mechanism (fine movement / coarse movement mechanism 4) for moving the position of the environmental control cell 2 are provided, and the sample heater 6 is connected via the sample table attachment 5. , An electrode 7 and a sample stage 8 are provided. The moving mechanism (fine movement / coarse movement mechanism 4) is capable of both coarse movement for greatly changing the position of the test cell and fine movement for fine adjustment.

  The sample 9 is installed on the sample table 8, and electrical connection is established between the sample table 8 and the electrode 7. An electrode 7 may be embedded in the sample stage 8. The sample 9 is electrically connected to the sample table 8 at a desired location. In general, a conductive paste is used for conduction, but the method is not limited by soldering or welding.

  The sample 9 is connected to two desired locations in the sample using the in-sample voltage plus terminal 15 and the in-sample voltage minus terminal 16. As a connection method, a conductive paste is used, but the method is not limited by soldering or welding. The in-sample voltage plus terminal 15 and the in-sample voltage minus terminal 16 are connected to an in-sample voltage application device 17 that applies a voltage between two desired points in the sample. It is preferable for migration evaluation that the applied voltage be in the range of 5 to 100V.

  The shape of the surface of the sample is measured by a method in which the tip of the cantilever 11 is brought into contact with the sample surface and the displacement of the spring of the cantilever 11 attached to the cantilever holder 10 is detected. The cantilever displacement detection optical system 12 irradiates the back surface of the cantilever 11 with laser light, reads the spring displacement of the cantilever 11 from the coordinate axis of the light reflected by a detection device such as a photodiode, and measures the uneven shape of the sample. Further, not only the shape but also the current is measured by bringing the tip of the cantilever 11 into contact with the sample surface. In this embodiment, the electrode 7 and the cantilever 11 are connected to the probe-electrode voltage application device 13, and the current that flows when a voltage is applied between the probe at the tip of the cantilever 11 and the electrode 7 is detected. Measure with the instrument 14. A potentiogalvano stud or the like may be used to apply a voltage between the cantilever and the electrode.

  In the environment control cell, the environment can be adjusted to provide the sample evaluation conditions. For example, in the case of electromigration evaluation, it may be in the air. In the case of evaluation of thermal migration, the temperature is controlled in a temperature range of 100 ° C. to 300 ° C. in vacuum, or in nitrogen or argon. In the case of evaluation of ion migration (also referred to as electrochemical migration), the temperature is controlled in a temperature range from 40 ° C. to 130 ° C. in a humidity atmosphere of 85% RH to 93% RH. The kind of gas at this time may be air, nitrogen or argon. In particular, under the HAST test conditions, the water vapor pressure is controlled from 0.12 MPa to 0.23 MPa. In the case of evaluation of ion migration (also referred to as electrochemical migration), the sample may be immersed in water. The water temperature at this time is controlled from room temperature to 85 ° C.

  FIG. 2 is a diagram showing an example of connection of the inspection apparatus of this example to a sample. An example of a migration evaluation method is shown below using FIG.

  (1) The sample to be inspected is a sample 9 having an insulator 19 sandwiched between two conductors 18a and 18b. The sample is placed on the sample stage 8 and fixed using silver paste. Further, the in-sample voltage plus terminal 15 and the in-sample voltage minus terminal 16 are bonded to the two conductors 18a and 18b using silver paste, respectively.

  (2) The measurement environment control apparatus 1 controls the measurement environment of the sample, and the ambient atmosphere is set to 130 ° C., 85% RH, and a water vapor pressure of 0.23 MPa in the air. Using the sample heater 6, the temperature of the sample stage 8 is controlled to 130 ° C.

  (3) A voltage of 100 V was applied between the conductor 18a and the conductor 18b using the in-sample voltage application device 17. The application method was a floating method, and a voltage of 100 V was continuously applied for 18 hours. As another example, there is a voltage application method in which the voltage is pulsed at intervals of 10 milliseconds and the cycle is repeated while resting for 10 minutes.

  (4) Although not shown, the in-sample voltage application device 17 may include an insulation resistor for measuring the insulation resistance, and the insulation resistance of the insulator 19 sandwiched between the two conductors 18a and 18b. May be measured.

  (5) Using the probe-electrode voltage application device 13, a voltage of 100 V is applied between the probe at the tip of the cantilever 11 and the electrode 7. The fine / coarse movement mechanism 4 measures the shape while moving between the probe at the tip of the cantilever 11 and the sample 9 in the horizontal (XY) direction and the vertical (Z) direction. Simultaneously with the shape measurement, the current flowing between the probe and the electrode 7 is measured by the current detector 14.

  (6) Two-dimensional mapping is performed as shape data as a shape image and current data as a current image. FIG. 3 is a shape image, and FIG. 4-A is a current image. The brighter the shape image, the higher the height in the Z direction. In the current image, the brighter the current flows. In particular, the current increases at the migration occurrence point. It is considered that at the location where the migration has occurred, by detecting the current flowing between the electrode and the probe, there is an influence of the deposit (conductor) deposited on the dielectric portion between the conductors. The brightly shown part (white point) in FIG. 4-A is where the current flows. The point indicated by a circle in the figure is the starting point of migration. By superimposing the current image with the shape image, it is possible to specify in more detail at which position the migration has occurred. FIG. 4-B is a superimposed image. The white spots are where the current flows, and the bright purple color of the back is high in shape and the dark purple color is low in shape. It can be seen that white spots are concentrated in the dark purple part, and current flows easily at low heights.

(7) From the current image, measure the integrated current density per screen or in a certain area. In FIG. 4, the integrated current density per screen was 26 pA / (nm) ² .

  (8) The insulation reliability is evaluated by plotting the integrated current value with the left time as the horizontal axis. FIG. 5 is a graph plotting the change over time of the integrated current value. A threshold value of integrated current density is set for each product, and those that reach the threshold value or more are selected as defective. Moreover, the location where migration has occurred can be identified.

  In addition to the example of connection to the sample of FIG. 2 as described above, FIGS. 6A, 6B, 6C, 6D, 6E, and 6F show the sample of this example. It is a figure which shows the example of a different connection to. FIG. 6A is an example of evaluating migration resistance in a wiring structure portion in an LSI, and is an example in which measurement is performed by connecting between wirings arranged alternately. FIG. 6B is an example of evaluating migration resistance in a printed circuit board, and is an example in which measurement is performed by connecting between a through-hole plating portion and an arbitrary wiring. FIG. 6C is an example of evaluating migration resistance in a conductive film, and is an example in which measurement is performed by connecting between minute arbitrary conductive materials dispersed in the film. FIG. 6D is an example of CAF resistance evaluation in a printed circuit board, and is an example in which measurement is performed by connecting between upper and lower plating layers. FIG. 6E is an example of evaluating migration resistance of an underwater cable, in which an electrically conductive tape is applied to the outer covering portion of the cable, and the measurement is performed by connecting the portion to the copper wire portion at the center of the cable. FIG. 6-f is an example of evaluation of migration resistance of COF, and is an example in which measurement is performed by connecting between copper patterns. Depending on the purpose, the connection method can be changed and the migration resistance can be observed.

  In Example 2, a second embodiment of an inspection apparatus that detects an insulation failure of a sample using mainly the mechanism of a scanning probe microscope will be described. FIG. 7 is a diagram illustrating this example.

  As in the first embodiment, the inspection apparatus according to the present embodiment includes a measurement environment control device 1 for creating a constant environment, and an environment control cell 2 connected to the measurement environment control device 2 that can hold the sample in the constant environment. On the vibration isolation table 3, the environmental control cell 2 and a moving mechanism (fine movement / coarse movement mechanism 4) for moving the position of the environmental control cell 2 are provided, and the sample heater 6 is connected via the sample table attachment 5. , An electrode 7 and a sample stage 8 are provided. The sample 9 is placed on the sample stage 8 and measures the shape and current by bringing the tip of the cantilever 11 attached to the cantilever holder 10 into contact with the sample surface. The sample stage 8 and the electrode 7 are electrically connected. The shape of the sample is measured by a method for detecting the displacement of the spring of the cantilever 11. The cantilever displacement detection optical system 12 irradiates the back surface of the cantilever 11 with laser light, reads the spring displacement of the cantilever 11 from the coordinate axis of the reflected light, and measures the uneven shape of the sample.

  In this example, a plurality of in-sample voltage terminals 20 a, 20 b, 20 c, 20 d, a terminal connected to the cantilever, and a terminal connected to the electrode are connected to the control unit 21. The control unit 21 has a switching mechanism that selects two terminals, a terminal to which a positive polarity voltage is to be applied and a terminal to which a negative polarity voltage is to be applied, from among the in-sample voltage terminals 20a, 20b, 20c, and 20d. The selected two terminals of the control unit 21 are connected to the in-sample voltage application device 17. Furthermore, it is possible to select a terminal to which a voltage is to be applied to the terminal connected to the cantilever from the terminals connected to the in-sample voltage terminals 20a, 20b, 20c, and 20d and the electrode. These two terminals are connected to the probe-sample or interelectrode voltage application device 22 by the control unit 21. The current flowing when the voltage is applied is measured by the current detector 14.

  FIG. 8 is a diagram illustrating an example of connection to a sample when there are four conductors in the sample. Four conductors 18a, 18b, 18c and 18d are connected to the control unit. The connection method is the same as in the first embodiment. The sample 9 having the insulator 19 sandwiched between the four conductors 18a and 18b is placed on the sample stage 8 and bonded using silver paste. For example, when it is desired to apply a positive polarity voltage to the conductor 18a and a negative polarity voltage to the conductor 18d, these two may be selected. The selected conductors 18a and 18d are automatically connected to the in-sample voltage application device 17. Furthermore, when it is desired to measure the current flowing between the probe and the conductor 18c, the conductor 18c is selected. Then, it is automatically connected to the probe-sample or interelectrode voltage application device 22, and the current flowing between the probe and the conductor 18c can be measured by the current detector 14.

  Alternatively, the current flowing between the probe and the conductor 18c may be measured by applying a positive polarity voltage to the conductor 18a and a negative polarity voltage to the conductor 18b. Alternatively, the current flowing between the probe and the electrode may be measured by applying a positive polarity voltage to the conductor 18c and a negative polarity voltage to the conductor 18d.

  In either measurement method, the current increases at the migration start point between the two conductors, and the generation start point can be identified from the current image and the shape image. Moreover, the influence of the arrangement design between conductors can be clarified by measuring the integrated current density per screen or in a certain area.

[Comparative Example 1]
FIG. 9 is a schematic diagram (Comparative Example 1) showing a conventional scanning probe microscope. Similar to the first and second embodiments, the measurement environment control device 1 and the environment control cell 2 connected to the measurement environment control device 2 and capable of holding the sample in a constant environment are provided. On the vibration isolation table 3, the environmental control cell 2 and a moving mechanism (fine movement / coarse movement mechanism 4) for moving the position of the environmental control cell 2 are provided, and the sample heater 6 is connected via the sample table attachment 5. , An electrode 7 and a sample stage 8 are provided. The sample 9 is placed on the sample stage 8 and measures the shape and current by bringing the tip of the cantilever 11 attached to the cantilever holder 10 into contact with the sample surface. The sample stage 8 and the electrode 7 are electrically connected. The shape of the sample is measured by a method for detecting the displacement of the spring of the cantilever 11. The cantilever displacement detection optical system 12 irradiates the back surface of the cantilever 11 with laser light, reads the spring displacement of the cantilever 11 from the coordinate axis of the reflected light, and measures the uneven shape of the sample. On the other hand, the current is detected by connecting the electrode 7 and the cantilever 11 to the probe-electrode voltage application device 13 and applying a voltage between the probe at the tip of the cantilever 11 and the electrode 7. Measure with the instrument 14. However, the conventional scanning probe microscope does not include the in-sample voltage terminal and the in-sample voltage application device 17 for applying a voltage in the sample 9. For this reason, migration cannot be generated, and it is not possible to inspect a location where an insulation failure is likely to occur and the cause of the occurrence.

FIG. 3 is a diagram illustrating a configuration example of a scanning probe microscope according to Example 1. FIG. 6 is a diagram for explaining an example of connecting samples according to Example 1; 2 is a shape image according to Example 1; 2 is a current image according to Example 1; 2 is a superimposed image of a current image and a shape image according to the first embodiment. It is the figure which plotted the integrated current value with respect to the leaving time which concerns on Example 1. FIG. FIG. 6 is a diagram illustrating a connection example of another sample according to the first embodiment. FIG. 6 is a diagram illustrating a connection example of another sample according to the first embodiment. FIG. 6 is a diagram illustrating a connection example of another sample according to the first embodiment. FIG. 6 is a diagram illustrating a connection example of another sample according to the first embodiment. FIG. 6 is a diagram illustrating a connection example of another sample according to the first embodiment. FIG. 6 is a diagram illustrating a connection example of another sample according to the first embodiment. 6 is a diagram illustrating a configuration example of a scanning probe microscope according to Embodiment 2. FIG. 6 is a diagram for explaining an example of connecting samples according to Example 2. FIG. It is a figure explaining the structural example of the scanning probe microscope which concerns on the comparative example 1. FIG.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Measurement environment control apparatus 2 Environment control cell 3 Anti-vibration stand 4 Fine / coarse movement mechanism 5 Sample stand attachment 6 Sample heater 7 Electrode 8 Sample stand 9 Sample 10 Cantilever holder 11 Cantilever 12 Cantilever displacement detection optical system 13 Probe-electrode Inter-voltage application device 14 Current detector 15 In-sample voltage plus terminal 16 In-sample voltage minus terminal 17 In-sample voltage application device 18 Conductor 19 Insulator 20 In-sample voltage terminal 21 Control unit 22 Probe-sample or electrode voltage application apparatus

Claims (12)

A probe comprising: a probe; an electrode disposed through the probe and the sample; and a current detection device that detects a current flowing between the probe and the electrode by applying a voltage between the probe and the electrode. A microscope,
A probe microscope comprising: at least two voltage terminals for applying a voltage between two desired points of a sample; and a voltage applying device for applying a voltage between the voltage terminals. The probe microscope according to claim 1,
A probe microscope comprising an environmental control device for exposing a sample to a desired atmosphere. A probe microscope according to claim 2, wherein
The environment control device variably controls at least one of a component, humidity, temperature, and pressure of the atmosphere of the sample. The probe microscope according to any one of claims 1 to 3,
The voltage applying apparatus includes an applied voltage switching means for applying a voltage by switching a pulse method or a floating method. The probe microscope according to claim 4, wherein
The voltage application device performs an application condition control combined with a pulse method or a floating method. A test method for insulation failure of a sample made of a conductor and an insulator or dielectric,
Applying a voltage through an insulator between the desired two points of the conductor of the sample;
A method for inspecting insulation failure, wherein a voltage is applied between two desired points of the insulator of the sample, and a current flowing between the two points of the insulator is detected. The method for inspecting insulation failure according to claim 6,
Application of a voltage between two desired points of the conductor is a step of generating migration in a sample under an atmosphere controlled to a desired temperature and humidity.
Application of voltage between two desired points of the insulator is a step of identifying a migration occurrence location of the sample, and a method for inspecting insulation failure. A method for inspecting insulation failure according to claim 6 or 7,
The inspection method for defective insulation, wherein the sample is a sample in which a conductor and an insulator or a dielectric are laminated, or a sample in which the conductor and the insulator or dielectric are adjacent to each other. A probe, an electrode disposed through a sample at a position facing the probe, a current detection device that applies a voltage between the probe and the electrode and detects a current flowing between the probe and the electrode; And at least two voltage terminals for applying a voltage between desired two points of the conductor of the sample, and a voltage applying device for applying a voltage between the voltage terminals,
An inspection apparatus for defective insulation that observes a defective insulation of a sample in which a conductor and an insulator or a dielectric are laminated or adjacent to each other based on a current value of the current detection device. An inspection apparatus for defective insulation according to claim 9,
An inspection apparatus for defective insulation, comprising three or more voltage terminals, wherein the voltage application device has a switching mechanism for selecting at least two voltage terminals to which a voltage is applied.   The inspection device for insulation failure according to claim 9, further comprising a control unit that selects a conductor to which the voltage terminal is connected, and the control unit has a switching mechanism that selects a voltage terminal to which a voltage is applied. Insulation defect inspection device characterized by.   The inspection apparatus for defective insulation according to claim 9 or 11, wherein means for obtaining a surface shape image of the sample, means for creating a profile by comparing the detected current value and the surface shape image, An inspection apparatus for defective insulation, comprising: an evaluation unit that identifies a defective part and a defect content of a sample from the profile.

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