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JP4947864B2 - High temperature-substrate coating method and apparatus by sputtering - Google Patents
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JP4947864B2 - High temperature-substrate coating method and apparatus by sputtering - Google Patents

High temperature-substrate coating method and apparatus by sputtering Download PDF

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Publication number
JP4947864B2
JP4947864B2 JP2001503712A JP2001503712A JP4947864B2 JP 4947864 B2 JP4947864 B2 JP 4947864B2 JP 2001503712 A JP2001503712 A JP 2001503712A JP 2001503712 A JP2001503712 A JP 2001503712A JP 4947864 B2 JP4947864 B2 JP 4947864B2
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Prior art keywords
substrate
case
sputtering
holder
opening
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JP2003502497A (en
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クリューガー、ウルズス
シリング、ヴォルフガング
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Siemens AG
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/541Heating or cooling of the substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0408Processes for depositing or forming copper oxide superconductor layers by sputtering

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physical Vapour Deposition (AREA)

Description

【0001】
本発明はスパッタリングによる高温‐基板コーティング方法に関する。この方法では、ケース内で移動可能な形で配置されている基板ホルダに基板を取り付けた後に加熱が行われ、基板ホルダを移動させながらターゲット装置を用いてスパッタリングが行われる。
【0002】
このような方法はドイツ特許公開公報第4104592A1号から公知である。この公知の方法を実施するには、ケース内に回転盤として形成された基板ホルダを備えた装置が用いられる。回転盤の下には基板を加熱するための装置があり、この基板はコーティングの前に回転盤の上に取り付けられる。コーティングすべき側面を有する基板の反対側には、基板を十分に加熱した後にスパッタリングを行うターゲットがある。この場合、スパッタリングは、均一な層を達成するために回転盤を回転させながら行われるが、その理由は、ターゲットが回転盤の中心軸の遊び空隙の外になるように調整され、基板に対して斜めに走行するように配置されているからである。公知の方法ないし公知の装置では基板は片側しかコーティングされない。基板のもう一方の側面もコーティングすべき場合には、基板を回転盤上へ逆向きに置いて2回目のスパッタリング工程を実施する必要がある。
【0003】
本発明の課題は、冒頭に挙げた種類の方法を用いてより経済的に基板の両側面のコーティングをただ1回のスパッタリング工程で行えるようにこの方法をさらに改良することにある。
【0004】
この課題を解決するために、本発明によれば冒頭に挙げた種類の方法では基板の両側に自由にアクセスでき、かつ、基板ホルダを動かす際、これら両側で基板ホルダを取り囲むケースの互いに向き合う開口部の傍を基板が通過するように、少なくとも1つの基板が基板ホルダに取り付けられている。加熱はケースからの輻射加熱により行われ、スパッタリングは、2つのターゲットから成りケースの外で開口部の前に存在するターゲット装置を用いて行われる。この場合、基板とはたとえば1回の作業工程で両側にコーティングされるただ1枚のウエーハを意味するだけでなく、たとえば2枚のウエーハがそれぞれ1回の作業工程で片面のみにコーティングすべき場合には、2枚のウエーハから成る複合基板をも意味する。
【0005】
本発明による方法の主要な利点は、ただ1回のプロセスないし工程で基板の両側面をコーティングでき、その結果、公知の方法と比べて著しく経済的にコーティングを行うことができることにある。その場合、一般に2つのターゲットから成るターゲット装置のみを使用するので、追加費用がかなり少なくて済む。更に別の主要な利点は、ただ1回のスパッタリング工程が必要となるだけなので、同種のターゲットを使用すれば両側の層の品質が同一となることである。
【0006】
本発明による方法では、基板ホルダの移動を種々の仕方で行うことができる。少なくとも1つの基板を有する基板ホルダが並進的に振動しながら開口部の傍を通過するようにすると有利である。本発明による方法のこの実施形態では、使用されるターゲットがケース内でかなり細長い開口部を許容する場合、基板ホルダ上の複数の基板はいずれも同時に両側のコーティングが可能となる。
【0007】
本発明による方法では、基板ホルダがケース開口部の傍を通過中に基板温度が不変に保たれるような振動数で通過する場合に特に良好な結果が達成される。
【0008】
本発明による方法のその他の有利な実施形態では、少なくとも1つの基板を有する基板ホルダは回転運動により開口部の傍を通過する。本発明による方法のこの実施形態の利点は特に、本方法に必要な装置が比較的簡単に形成可能であることにある。
【0009】
本発明による方法の上述の実施形態では、基板ホルダがケース開口部の傍を通過中に基板温度が不変に保たれるような回転数で回転すると有利である。
【0010】
本発明による方法では、輻射加熱を種々の仕方で生じさせることができる。輻射加熱用に電気加熱装置を用いれば費用および制御性の点で特に有利と考えられる。
【0011】
上述のドイツ特許公開公報第4104592A1号からは、基板加熱、ケース内で移動可能な状態に保たれている基板ホルダを備えたケースおよびターゲット装置を有する、スパッタリングを用いた高温‐基板コーティング用の装置も公知である。
【0012】
本発明の更に別の課題は、この種の装置をこの装置によってただ1回のスパッタリング工程で基板の両側面にコーティング可能なように改良することにある。
【0013】
本発明によれば、この課題を解決するために基板ホルダは、基板の両側に自由にアクセスできる形で基板が保持されるような形態を有する基板保持装置を備えている。ケースの基板ホルダに向かい合う両側面には、基板ホルダの移動時に基板が開口部の傍を通過するような位置に開口部が存在する。ターゲット装置は、それぞれがケースの外で開口部の前にある2つのターゲットから成り、基板加熱はケースの輻射加熱により行われる。本発明による装置は特に、比較的簡単に基板のコーティングを1回の工程で基板の両側にコーティングできるという点で有利である。
【0014】
本発明による装置では、基板ホルダは種々の仕方で形成可能である。基板ホルダがケース内を移動するキャリッジであれば有利と考えられる。
【0015】
本発明による装置を製造するための費用に関しては、基板ホルダが回転盤であり、かつ基板ホルダの回転時に基板が開口部の傍を通過するような位置に、中心軸の外の少なくとも1つの領域に基板保持装置を有する場合が特に良好である。
【0016】
本発明による装置は輻射加熱用に種々の形成が可能であり、たとえばこの加熱はケースを任意の仕方で外部から加熱することによって保証される。ただし、安価に製造するという理由から、また、適正な温度管理を達成するためには輻射加熱器がケースの開口部を有する側の内側の各1個の加熱マットから成る場合が特に有利と考えられる。
【0017】
本発明による装置では、開口部はケースの互いに向かい合う側に種々の仕方で配置可能であり、たとえば開口部が直接向かい合うことも可能である。その場合開口部が対角線上で向かい合うようにすると特に有利である。というのは、このようにすれば、2つの開口部を通じての熱輻射によって基板の熱負荷の均等化が達成されるからである。
【0018】
本発明を図面に基づきさらに詳細に説明する。
【0019】
図1に見てとれるように、図示された装置1はケース2を有し、このケース内にはキャリッジ4上で基板3が二重矢印5の方向へ並進的に振動しながら往復移動することができる。基板ホルダのための駆動装置は図を簡単にするために示されていない。
【0020】
図1からは更に、ケース2がその互いに向かい合う側面6および7にそれぞれ1つの開口部8および9を有することが認められ、これらの開口部の傍を基板ホルダ4が基板3と共に並進的に振動しながら移動する際に通過する。開口部8および9の前には同様に略示された各ターゲット10ないし11が存在する。
【0021】
ケース側面6の内壁12およびケース側面7の内壁13上にはそれぞれ1つの加熱マット14ないし15があり、これらのマットは図示されていないが電気端子を装備され、電気加熱器であることを示している。これらの加熱マット14および15から熱輻射が発せられ、これにより、そのつど基板3が必要な温度まで加熱される。
【0022】
基板3が十分に加熱されると、ターゲット10および11が活性化し、本来のスパッタリング工程が開始する。この場合、基板3は基板ホルダ4と共にキャリッジ上で往復移動するが、基板3が開口部8および9の傍を通過するたびに著しい冷却が生じないように、すなわち温度が保たれるような振動数が選択される。
【0023】
図2から明白に見てとれるように、ケース2の側面6および7における開口部8および9は縦長の長方形を形成し、この長方形に相応する形状に形成されたターゲット10ないし11が存在する。基板が開口部8ないし9と比べてかなり小さい場合は、キャリッジと平行に複数個の基板を開口部8および9の傍を通過させることができる。
【0024】
図3および4による装置は図1および2による装置とは、基板ホルダが回転盤20として形成されている点が異なり、この回転盤に基板収容部21を用いて基板22が、基板の両側面23および24に自由にアクセスできる形で支持されている。特に図3に示すように、回転盤20は軸25上に支承されている。
【0025】
基板22を有する基板収容部21は、回転運動時に基板がケース壁28および29における開口部26ないし27の傍を通過するように回転盤20に配置される。これらの開口部26および27の前にターゲット30および31があり、これらのターゲットを用いて基板22の両側面23および24のコーティングが行われる。
【0026】
図4は、この実施例で開口部26および27が基板22の寸法に相応する円形であることを示している。
【図面の簡単な説明】
【図1】本発明の方法を実施するための装置の一実施例の断面図。
【図2】図1による実施例の平面図。
【図3】本発明による方法を実施するための装置の別の実施例の断面図。
【図4】この実施例の平面図。
【符号の説明】
1 装置全体
2 ケース
3 基板
4 キャリッジ
8 開口
9 開口
10 ターゲット
11 ターゲット
14 加熱マット
15 加熱マット
20 回転盤
21 基板収容部
22 基板
25 軸
26 開口
27 開口
30 ターゲット
31 ターゲット
[0001]
The present invention relates to a high temperature-substrate coating method by sputtering. In this method, heating is performed after the substrate is attached to the substrate holder that is arranged so as to be movable in the case, and sputtering is performed using the target device while moving the substrate holder.
[0002]
Such a method is known from German Offenlegungsschrift 410 4592 A1. In order to carry out this known method, an apparatus including a substrate holder formed as a turntable in a case is used. Below the turntable is a device for heating the substrate, which is mounted on the turntable before coating. On the opposite side of the substrate having the side to be coated is a target that performs sputtering after the substrate is fully heated. In this case, sputtering is performed while rotating the rotating disk to achieve a uniform layer, because the target is adjusted so that it is outside the play gap of the central axis of the rotating disk, and relative to the substrate. This is because they are arranged to run diagonally. In known methods or known devices, the substrate is only coated on one side. If the other side of the substrate is also to be coated, a second sputtering step must be performed with the substrate placed on the turntable in the reverse direction.
[0003]
It is an object of the present invention to further improve this method so that it is possible to more economically coat both sides of the substrate with a single sputtering process using the method of the type mentioned at the beginning.
[0004]
To solve this problem, according to the present invention, the method of the type mentioned at the beginning allows free access to both sides of the substrate, and when the substrate holder is moved, the opposite sides of the case that surrounds the substrate holder on these sides. At least one substrate is attached to the substrate holder so that the substrate passes by the part. Heating is performed by radiant heating from the case, and sputtering is performed using a target device that is composed of two targets and exists in front of the opening outside the case. In this case, the substrate means not only a single wafer coated on both sides in a single work process, for example, but two wafers should be coated on only one side in a single work process, for example. Means a composite substrate composed of two wafers.
[0005]
The main advantage of the method according to the invention is that it is possible to coat both sides of the substrate in a single process, so that the coating can be carried out significantly more economically than known methods. In that case, generally only a target device consisting of two targets is used, so that the additional cost is considerably reduced. Yet another major advantage is that if only one sputtering step is required, the quality of the layers on both sides will be the same if the same type of target is used.
[0006]
In the method according to the invention, the substrate holder can be moved in various ways. It is advantageous if the substrate holder with at least one substrate passes by the opening with translational vibration. In this embodiment of the method according to the invention, if the target used allows a fairly elongated opening in the case, any of the plurality of substrates on the substrate holder can be coated on both sides simultaneously.
[0007]
The method according to the invention achieves particularly good results when the substrate holder passes at a frequency such that the substrate temperature remains unchanged while passing by the case opening.
[0008]
In another advantageous embodiment of the method according to the invention, the substrate holder with at least one substrate passes by the opening by a rotational movement. The advantage of this embodiment of the method according to the invention is in particular that the devices required for the method can be formed relatively easily.
[0009]
In the above-described embodiments of the method according to the invention, it is advantageous if the substrate holder is rotated at a speed such that the substrate temperature is kept unchanged while passing by the case opening.
[0010]
In the method according to the invention, radiant heating can be generated in various ways. Use of an electric heating device for radiation heating is considered particularly advantageous in terms of cost and controllability.
[0011]
From the above-mentioned German Patent Publication No. 4104592 A1, an apparatus for high temperature-substrate coating using sputtering having a substrate heating, a case with a substrate holder kept in a movable state in the case and a target device Is also known.
[0012]
Yet another object of the present invention is to improve such an apparatus so that it can be coated on both sides of the substrate in a single sputtering process.
[0013]
According to the present invention, in order to solve this problem, the substrate holder includes a substrate holding device having a configuration in which the substrate is held in a form that allows free access to both sides of the substrate. On both side surfaces of the case facing the substrate holder, there are openings at positions where the substrate passes by the opening when the substrate holder is moved. The target device is composed of two targets each outside the case and in front of the opening, and the substrate is heated by radiant heating of the case. The device according to the invention is particularly advantageous in that it allows a relatively simple coating of the substrate on both sides of the substrate in a single step.
[0014]
In the device according to the invention, the substrate holder can be formed in various ways. It is considered advantageous if the substrate holder is a carriage that moves in the case.
[0015]
With regard to the costs for manufacturing the device according to the invention, at least one region outside the central axis is located such that the substrate holder is a turntable and the substrate passes by the opening when the substrate holder rotates. It is particularly preferable to have a substrate holding device.
[0016]
The device according to the invention can be formed in various ways for radiant heating, for example, this heating being ensured by externally heating the case in any way. However, for the reason of manufacturing at a low cost, and in order to achieve proper temperature control, it is particularly advantageous that the radiant heater is composed of one heating mat inside each side having the opening of the case. It is done.
[0017]
In the device according to the invention, the openings can be arranged in various ways on opposite sides of the case, for example the openings can be directly facing each other. In that case, it is particularly advantageous if the openings face each other diagonally. This is because, in this way, equalization of the thermal load on the substrate is achieved by thermal radiation through the two openings.
[0018]
The present invention will be described in more detail with reference to the drawings.
[0019]
As can be seen in FIG. 1, the illustrated device 1 has a case 2 in which a substrate 3 reciprocates on a carriage 4 while reciprocally oscillating in the direction of a double arrow 5. Can do. The drive for the substrate holder is not shown for the sake of simplicity.
[0020]
1 also shows that the case 2 has one opening 8 and 9 on its opposite sides 6 and 7 respectively, and the substrate holder 4 vibrates in translation along with the substrate 3 beside these openings. Pass while moving. In front of the openings 8 and 9 there are also targets 10 to 11 which are also schematically indicated.
[0021]
There are one heating mats 14 to 15 on the inner wall 12 of the case side surface 6 and the inner wall 13 of the case side surface 7, respectively. These mats are not shown, but are equipped with electrical terminals, indicating that they are electric heaters. ing. Thermal radiation is emitted from these heating mats 14 and 15, whereby the substrate 3 is heated to the required temperature each time.
[0022]
When the substrate 3 is sufficiently heated, the targets 10 and 11 are activated and the original sputtering process is started. In this case, the substrate 3 reciprocates on the carriage together with the substrate holder 4. However, the substrate 3 is vibrated so that no significant cooling occurs every time the substrate 3 passes by the openings 8 and 9, that is, the temperature is maintained. A number is selected.
[0023]
As can be clearly seen from FIG. 2, the openings 8 and 9 in the side surfaces 6 and 7 of the case 2 form a vertically long rectangle, and there are targets 10 to 11 formed in a shape corresponding to this rectangle. If the substrate is considerably smaller than the openings 8 to 9, a plurality of substrates can be passed by the openings 8 and 9 in parallel with the carriage.
[0024]
The apparatus according to FIGS. 3 and 4 differs from the apparatus according to FIGS. 1 and 2 in that the substrate holder is formed as a turntable 20. 23 and 24 are supported in a freely accessible manner. In particular, as shown in FIG. 3, the turntable 20 is supported on a shaft 25.
[0025]
The substrate accommodating portion 21 having the substrate 22 is disposed on the turntable 20 so that the substrate passes by the openings 26 to 27 in the case walls 28 and 29 during the rotational movement. In front of these openings 26 and 27 are targets 30 and 31, which are used to coat the side surfaces 23 and 24 of the substrate 22.
[0026]
FIG. 4 shows that in this embodiment the openings 26 and 27 are circular corresponding to the dimensions of the substrate 22.
[Brief description of the drawings]
1 is a cross-sectional view of one embodiment of an apparatus for carrying out the method of the present invention.
FIG. 2 is a plan view of the embodiment according to FIG.
FIG. 3 is a cross-sectional view of another embodiment of an apparatus for carrying out the method according to the invention.
FIG. 4 is a plan view of this embodiment.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Whole apparatus 2 Case 3 Board | substrate 4 Carriage 8 Opening 9 Opening 10 Target 11 Target 14 Heating mat 15 Heating mat 20 Turntable 21 Substrate accommodating part 22 Substrate 25 Axis 26 Opening 27 Opening 30 Target 31 Target

Claims (7)

スパッタリングによる高温‐基板コーティングのため、ケース()内で移動可能な形で配置された基板ホルダ(4)に基板(3)を取り付けた後に加熱前記基板ホルダ(4)の移動下でターゲット(10,11)を用いたスパッタリングう、スパッタリングによる高温‐基板コーティング方法において、
少なくとも1つの前記基板(3)当該基板(3)の両側面(3a,3b)に自由にアクセスできる形で、かつ、これらの両側面(3a,3b)と共に、前記基板ホルダ(4)を取り囲む前記ケース()の互いに向かい合う壁(6,7)に設けられた開口部(8,9)の傍を通過する形で、前記基板ホルダ(4)に取り付け、
前記ケース()からの輻射加熱による加熱
前記少なくとも1つの基板(3)を有する前記基板ホルダ(4)を、前記ケース(2)内における進行と共に並進的に振動させながら前記開口部(8,9)の傍を通過させて行き、当該開口部(8,9)の傍らの通過の際に、前記ケース()の外あってかつ前記開口部(8,9)に対面する位置それぞれ配置した2つのターゲット(10,11)を有するターゲット装置によって、前記基板(3)の表面にスパッタリング
ことを特徴とする、スパッタリングによる高温‐基板コーティング方法。
Hot by sputtering - for substrate coating, have rows heating after attaching the substrate (3) on to case (2) the substrate is placed in a movable fashion in a holder (4), said substrate holder (4) cormorant rows sputtering using a target (10, 11) in the movement of a high temperature by sputtering - the substrate coating process,
At least one of said substrate (3), on both sides (3a, 3b) form free access to the said substrate (3), and these sides (3a, 3b) together with the substrate holder (4) in the form of passes by the opening provided in mutually facing walls (6,7) of the case surrounding the (2) (8,9), Replacing the substrate holder (4),
There line heating by radiant heat from the casing (2),
The substrate holder (4) having the at least one substrate (3) is passed along the opening (8, 9) while being translated in translation along with the progress in the case (2). upon passing beside the opening (8,9), two targets were arranged a outer side and at a position facing the opening (8,9) of the case (2) (10, 11 ) I by the target device having the features a row intends <br/> be sputtered to the surface of the substrate (3), the high temperature by sputtering - a substrate coating process.
前記基板ホルダ(4)の振動の振動数を前記開口部(8,9)の傍を通過中の前記基板(3)の基板温度が不変に保たれるような振動数に設定する
ことを特徴とする請求項1記載のスパッタリングによる高温‐基板コーティング方法。
The frequency of vibration of the substrate holder (4), a substrate temperature of the substrate (3) in past the said opening (8, 9) is set to the number of vibration as left unchanged <br A high temperature-substrate coating method by sputtering according to claim 1 characterized by the above-mentioned.
前記輻射加熱に、電気加熱器使用
ことを特徴とする請求項1または2記載のスパッタリングによる高温‐基板コーティング方法。
The radiation pressure heat hot due to sputtering of claim 1, wherein that you use an electric heater - substrate coating process.
スパッタリングによる高温‐基板コーティングを行うための、ケース(2)と、前記ケース(2)内に設けられた基板加熱器と、基板(3)を前記ケース内で移動可能な形で支持る基板ホルダ(4)と、ターゲット(10,11)を有する、スパッタリングによる高温‐基板コーティング装置において、
前記基板ホルダ(4)前記基板(3)を当該基板(3)の両側面(3a,3b)に自由にアクセスできる状態で支持する基板収容部を有し、
前記基板ホルダ(4)と向かい合う前記ケースの2つの壁(6,7)に、開口部(8,9)が、その傍らを前記基板ホルダ(4)が移動する際に通過するような位置に設けられており、
前記ターゲット(10,11)が、前記ケース()の外あってかつ前記開口部(8,9)に対面する位置それぞれ配置されたターゲットであり、
前記基板加熱器(14,15)、前記ケース(内に輻射過熱を施す輻射加熱器(14,15)からなるものであり、
前記基板ホルダ(4)が、前記ケース(2)内を進行しつつ、当該進行と共に並進的に振動しながら前記開口部(8,9)の傍を通過し、当該通過の際に、前記ケース(2)の外側であってかつ前記開口部(8,9)に面する位置に配置された2つのターゲット(10,11)を含んだターゲット装置によって、前記基板(23)の表面にスパッタリングが施されるように設定されている
ことを特徴とするスパッタリングによる高温‐基板コーティング装置。
Hot by sputtering - a substrate for the substrate is coated, a case (2), a substrate heater provided in the inner case (2), supported movably form the substrate (3) within said case a holder (4), and a data Ge' preparative (10, 11), a high temperature by sputtering - the substrate coating apparatus,
Said substrate holder (4) has the sides (3a, 3b) board accommodating portion for supporting in a state freely accessible to the substrate (3) the substrate (3),
The two walls of the case facing the said substrate holder (4) (6,7), openings (8,9) is in a position such that the side the substrate holder (4) to pass through when moving Provided,
It said target (10, 11) is a target placed at a position facing the a outer side and the openings (8,9) of the case (2),
The substrate heater (14, 15) comprises a radiant heater (14, 15) that applies radiant overheating in the case ( 2 ) .
The substrate holder (4) passes through the opening (8, 9) while moving in the case (2) while being translated in translation, and the case (2) is passed along the case (2). Sputtering is performed on the surface of the substrate (23) by a target device including two targets (10, 11) arranged outside the (2) and facing the openings (8, 9). A high temperature-substrate coating apparatus by sputtering , characterized in that it is set to be applied .
前記基板ホルダ(4)が、前記ケース(2)内を移動するキャリッジである
ことを特徴とする請求項記載のスパッタリングによる高温‐基板コーティング装置。
It said substrate holder (4) is a high temperature by sputtering according to claim 4, characterized in that the carriage for moving the inner case (2) - a substrate coating apparatus.
前記輻射加熱器が、前記開口部(8,9)を有する前記ケース(2)の壁(6,7)の内側(12,13)に設けられた加熱マット(14,15)からなるものである
ことを特徴とする請求項4または5記載のスパッタリングによる高温‐基板コーティング装置。
But the radiant heater, comprising a wall heating mat provided inside (12, 13) of (6,7) (14,15) of said case (2) having the opening (8, 9) 6. The sputtering high temperature-substrate coating apparatus according to claim 4 or 5 .
前記開口部(8,9)が、前記基板ホルダ(4)の進行の軌道を挟んで対角線上に(または千鳥状に)向かい合うように、前記ケース(2)の1つの面とそれに対向する他の1つの面とにそれぞれ配置されている
ことを特徴とする請求項4から6うち1つに記載のスパッタリングによる高温‐基板コーティング装置。
The opening (8,9), diagonally across the trajectory of progression of the substrate holder (4) (or in a staggered manner) opposite case Migihitsuji, one surface opposite to that of said case (2) to other high temperature by sputtering according to one of claims 4 6, characterized in that they are respectively disposed on the one face - the substrate coating apparatus.
JP2001503712A 1999-06-16 2000-06-16 High temperature-substrate coating method and apparatus by sputtering Expired - Fee Related JP4947864B2 (en)

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DE19928319A DE19928319C1 (en) 1999-06-16 1999-06-16 Process and device for substrate coating by means of sputtering
DE19928319.2 1999-06-16
PCT/DE2000/001986 WO2000077274A1 (en) 1999-06-16 2000-06-16 Method and device for coating a substrate at a high temperature by means of sputtering

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