JP4949135B2 - Laser heating apparatus for vacuum chamber and apparatus for vacuum process - Google Patents

Description

  The present invention relates to a laser heating apparatus that realizes high-temperature heating of a sample installed in a vacuum chamber under an ultra-high vacuum, and a vacuum including the laser heating apparatus and the vacuum chamber. The present invention relates to a process device. Examples of the vacuum process apparatus of the present invention include a crystal growth apparatus for growing a crystal on a substrate and a film formation apparatus for forming a thin film on the substrate, and particularly a molecular beam epitaxy apparatus.

  In a vacuum process, when heating a substrate or the like installed in a vacuum chamber under ultra-high vacuum, a resistance heating method, an infrared heating method, or the like is widely used. However, such a method has a limit in heating the sample to about 800 ° C. at most. By using a heater with a large heat capacity, a high temperature of about 1000 ° C. can be obtained, but in this case, the area around the heater is also heated, and the degree of vacuum is deteriorated by the outgas of the peripheral part and the heater itself. As the degree of vacuum deteriorates, there is a problem that impurities are mixed into the sample on the substrate and the characteristics and quality of the sample are deteriorated.

  On the other hand, as disclosed in Patent Document 1, a method of heating a sample by guiding infrared radiation from an infrared lamp with a quartz rod is proposed. In this method, the sample can be heated to about 1200 ° C. by using the infrared rays radiated from the infrared lamp efficiently guided to the quartz rod.

Further, as disclosed in Patent Document 2, a heating method using a laser beam guided by an optical fiber as a heat source has been proposed. It is known that a high temperature of about 1200 ° C. can be obtained even by using this method. Further, since this method uses laser light, it is also known that a minute region of a sample can be heated.
JP 2001-15248 A Japanese Patent No. 3268443 JP 2002-53947 A JP 2003-96559 A JP 2004-35958 A

However, the conventional techniques disclosed in Patent Documents 1 and 2 have the following problems.
In the heating method described in Patent Document 1, it is necessary to guide an infrared lamp outside the vacuum chamber with a quartz rod, and the quartz rod is inserted from the atmosphere side to the vacuum side through an O-ring or the like. When such a vacuum seal is used, a sufficient degree of vacuum cannot be obtained. Further, since the infrared lamp has a short life, it is not preferable from the viewpoint of cost and maintainability.

Since the laser heating apparatus described in Patent Document 2 uses laser light as a heat source, the problem of life and maintainability is solved. However, in this heating method, since the entire sample holder is heated by laser light, the outgas from the sample holder deteriorates the degree of vacuum. In addition, since the vacuum chamber is equipped with an optical fiber vacuum introduction part and a stage for laser beam irradiation position alignment, there is a problem that a sufficient degree of vacuum cannot be obtained due to the influence of outgas from the movable part. .
In order to grow a high-quality crystal such as a semiconductor crystal, 1.0 × 10 ⁻⁹ Torr or less, preferably 1.0 × 10 ⁻¹⁰ Torr, in a state where a raw material or gas for vapor deposition is not supplied. The following ultra-high vacuum is required. If crystal growth is performed in a state where the degree of vacuum has deteriorated due to the occurrence of outgas or the like, impurities are mixed into the crystal and the quality of the crystal or thin film is degraded. Therefore, in the infrared lamp heating apparatus and the laser heating apparatus as described above, the degree of vacuum is deteriorated by outgas from the heater, the substrate holder, and the movable part, and it is difficult to obtain a sufficient crystal quality.
The degree of vacuum described in the previous section refers to the degree of vacuum in a state where a raw material or gas for vapor deposition is not supplied, and the degree of vacuum described below also follows this.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a laser heating apparatus capable of heating a sample to a high temperature in an ultra-high vacuum atmosphere and a vacuum process apparatus including the same.

In order to achieve the above object, the present invention provides a sample holder having a stepped hole attached in a vacuum chamber, a light transmission window provided in a vacuum chamber wall near the sample holder, and an outside of the vacuum chamber. A metal body is placed on the back surface of the sample that is dropped and held in the hole of the sample holder, the metal body is heated by a laser, and the sample is heated by heat conduction from the metal body In addition, a laser heating apparatus for a vacuum chamber is provided in which the emission end of the laser light source is movable and the laser light irradiation position can be changed while the laser light source body is fixed .

In the laser heating apparatus for a vacuum chamber of the present invention, the emission end of the laser light source is movable, and the laser light source main body is fixed and can be moved in parallel with the optical axis of the laser. Is preferred.

In the vacuum chamber laser heating apparatus of the present invention , a condensing lens is provided at an emission end of the laser light source, and the condensing lens is moved in parallel to the optical axis of the laser to change the focal position of the laser light. It is preferable to have a configuration that can be used.

The present invention also provides a vacuum process apparatus comprising a vacuum chamber and the vacuum chamber laser heating apparatus according to the present invention attached to the vacuum chamber.

In the vacuum process apparatus of the present invention, 1.0 × 10 10 at a temperature range of 100 ° C. to 1400 ° C. ^-9 It is preferable that an ultrahigh vacuum of Torr or less can be obtained.
In the vacuum process apparatus of the present invention, 1.0 × 10 10 at a temperature range of 1000 ° C. to 1400 ° C. ^-9 It is preferable that an ultrahigh vacuum of Torr or less can be obtained.

In the vacuum process apparatus of the present invention, it is preferable that an ultrahigh vacuum of 1.0 × 10 ⁻¹⁰ Torr or less is obtained in a temperature range of 100 ° C. to 1400 ° C.

The vacuum chamber laser heating device of the present invention is held by the sample holder attached to the vacuum chamber, a light transmission window provided on the vacuum chamber wall near the sample holder, and the sample holder through the light transmission window. Since the sample has a laser light source arranged outside the vacuum chamber so that the sample can be irradiated with laser light and has a heat source and a movable part outside the vacuum chamber, there is no outgas from the heat source and the movable part. A sample placed in an ultrahigh vacuum atmosphere of 0.0 × 10 ⁻¹⁰ Torr or less can be heated to a temperature of about 100 to 1400 ° C.
Further, since only the sample can be heated, there is no outgas from the sample holder or the like, and high temperature processing can be performed in an ultrahigh vacuum atmosphere of 1.0 × 10 ⁻¹⁰ Torr or less.

Since the vacuum process apparatus of the present invention includes the vacuum chamber and the vacuum chamber laser heating apparatus of the present invention, it is installed in an ultrahigh vacuum atmosphere of 1.0 × 10 ⁻¹⁰ Torr or less in the vacuum chamber. Since the sample can be irradiated with laser light and heated to a temperature of about 100 to 1400 ° C., crystals and thin films of excellent quality can be obtained.
In addition, since only the sample can be heated, there is no outgas from the sample holder and the like, and high temperature processing can be performed under an ultrahigh vacuum of 1.0 × 10 ⁻¹⁰ Torr or less, and impurities are extremely mixed. Less high quality crystals and thin films can be obtained.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a schematic configuration diagram showing an embodiment of a laser heating apparatus for a vacuum chamber and an apparatus for a vacuum process according to the present invention. The vacuum process apparatus according to this embodiment includes a vacuum chamber laser heating apparatus 1 according to the present invention and a vacuum chamber 2.

  In the present embodiment, the laser heating device 1 for a vacuum chamber includes a sample holder 3 attached in the vacuum chamber 2, a light transmission window 4 provided on a vacuum chamber wall near the sample holder 3, and the light transmission window. 4 includes a laser light source 6 disposed outside the vacuum chamber 2 so that the sample held by the sample holder can be irradiated with the laser beam 7, and has a heat source and a movable part outside the vacuum chamber 2.

  In the present embodiment, the sample holder 3 has a hole diameter into which the sample 5 can be inserted, a holder portion made of a thick plate or block in which a hole 3b having a step 3a is formed, and the holder portion on the vacuum chamber wall. It consists of a fixed base 3c. In this sample holder 3, the sample 5 is dropped into the hole 3b so that the sample 5 is engaged and held in the step 3a, and the back surface of the sample 5 is irradiated with the laser beam 7 condensed through the light transmission window 4. It is like that. Thereby, the sample holder 3 itself is not substantially heated, and only the sample 5 can be heated.

  In the present embodiment, the emission end of the laser light source 6 is movable, and is movable in a direction perpendicular to the laser optical axis and in a parallel direction. For this reason, adjustment of the laser irradiation position is easy, and the focal point of the laser beam can be easily adjusted by using a condensing lens or the like, so that local heating or whole heating of the sample can be selected.

  Further, in another embodiment of the present invention shown in FIG. 2, a metal body 105 is disposed on the back surface of the sample 104 held by the sample holder 102, and the metal body 105 and the sample 104 generate heat conduction efficiently. Thus, the metal body 105 efficiently absorbs the laser light, and the sample 104 can be heated by heat conduction from the heated metal body 105.

  In the present embodiment, the laser light source 6 includes a laser light source main body such as a semiconductor laser, a light guide fiber that propagates laser light emitted from the laser light source main body, and a laser output from the output end of the light guide fiber. It is composed of a condensing lens that collects light. The laser light source body is not limited to a semiconductor laser, and for example, a carbon dioxide laser, a YAG laser, a fiber laser, or the like can be used.

  The laser light 7 emitted from the laser light source 6 is guided to the inside of the vacuum chamber 2 through the light transmission window 4 and irradiated to the back surface of the sample 5 held by the sample holder 3. The light transmission window 4 is made of a transparent material having a high transmittance with respect to the laser light 7 to be used. For example, quartz glass can be used. It is more preferable to provide an antireflection film suitable for the laser.

A vacuum exhaust port 8 connected to a vacuum pump system 9 is provided at an appropriate position of the vacuum chamber 2. As the vacuum pump system 9, it is sufficient that the inside of the vacuum chamber 2 can be maintained in a high vacuum atmosphere of 1.0 × 10 ⁻⁴ Torr or less, preferably 1.0 × 10 ⁻¹⁰ Torr or less. A conventionally known ultra-high vacuum pump or the like can be used.

The laser heating apparatus 1 for a vacuum chamber according to this embodiment includes a sample holder 3 attached in a vacuum chamber 2, a light transmission window 4 provided in the vicinity thereof, and a laser beam 7 applied to a sample 5 through the light transmission window 4. And a laser light source 6 disposed outside the vacuum chamber so as to be able to irradiate the light source, and has a structure having a heat source and a movable part outside the vacuum chamber, so that an ultrahigh vacuum atmosphere of 1.0 × 10 ⁻¹⁰ Torr or less The sample 5 placed below can be heated to a temperature of about 100 to 1400 ° C.
Further, since only the sample 5 can be heated, there is no outgas from the sample holder 3 or the like, and high temperature processing can be performed in an ultrahigh vacuum atmosphere of 1.0 × 10 ⁻¹⁰ Torr or less.
Further, by making the emission end of the laser light source 6 movable, alignment is possible without moving the position of the sample 5.

FIG. 3 is a schematic configuration diagram of a molecular beam epitaxy apparatus which is an example of the vacuum processing apparatus of the present invention.
The molecular beam epitaxy apparatus 10 includes a vacuum chamber 13 that is a film forming chamber, a shroud 14 that is disposed in the vacuum chamber 13 according to the shape of the inner wall of the vacuum chamber 13, and laser heating for a vacuum chamber according to the present invention. The apparatus 12 includes a plurality of molecular beam cells 16A and 16B inserted into the shroud 14.

  The vacuum chamber laser heating apparatus 12 used in the molecular beam epitaxy apparatus 10 uses the manipulator 11 that holds the substrate to be processed 15 in place of the sample holder 3 except that the vacuum shown in FIG. The same component as the chamber laser heating apparatus 1 is provided, and the manipulator 11 mounted in the shroud 14, the light transmission window 4 provided in the vicinity thereof, and the manipulator 11 are held through the light transmission window 4. And a laser light source 6 disposed outside the vacuum chamber 13 so as to be able to irradiate the substrate 15 with the laser beam 7.

  The manipulator 11 has a hole diameter into which the substrate 15 to be processed can be inserted, and a holder part made of a thick plate or block in which a hole 11b having a step 11a is formed, and a base part that fixes the holder part to a vacuum chamber wall 11c. The manipulator 11 drops the substrate to be processed 15 into the hole 11b, so that the substrate to be processed 15 is engaged with and held by the step 11a, and the laser beam condensed on the back surface of the substrate to be processed 15 through the light transmission window 4. 7 is irradiated. Thereby, the manipulator 11 itself is not substantially heated, and only the substrate to be processed 15 can be heated.

  Each of the plurality of molecular beam cells 16A and 16B has an evaporation crucible (not shown) and a shutter (not shown) each containing a film forming material, and the tip thereof faces the film forming surface of the substrate 15 to be processed. It is inserted into the shroud 14 in the state where In these molecular beam cells 16A and 16B, the vapor of the film forming material can be emitted toward the substrate 15 by heating the evaporation crucible and opening the shutter. The released film forming material reaches the film forming surface of the substrate 15 to be processed, and a thin film is formed on the surface.

  Laser light 7 emitted from the laser light source 6 of the laser heating device 12 is directly irradiated onto the back surface of the substrate 15 to be processed through the transparent window 4. The laser light source 6 has a movable mechanism and can adjust the irradiation position with respect to the substrate 15 to be processed.

Since this molecular beam epitaxy apparatus 10 includes a vacuum chamber 13 and a vacuum chamber laser heating apparatus 12, the molecular beam epitaxy apparatus 10 is installed in an ultrahigh vacuum atmosphere of 1.0 × 10 ⁻¹⁰ Torr or less in the vacuum chamber 13. Since the processing substrate 15 can be irradiated with the laser beam 7 and heated to a temperature of about 100 to 1400 ° C., a thin film with excellent quality can be obtained.
Further, since only the substrate to be processed 15 can be heated, there is no outgas from the manipulator 11 as a sample holder, and high temperature processing can be performed in an ultrahigh vacuum atmosphere of 1.0 × 10 ⁻¹⁰ Torr or less. This makes it possible to obtain a high-quality thin film with very few impurities.

[Example 1]
A molecular beam epitaxy apparatus using the present invention will be described. FIG. 4 shows an outline of a laser heating molecular beam epitaxy apparatus. As a laser light source, a semiconductor laser 127 having a wavelength of 808 nm and an optical output of 140 W was used. Laser light emitted from the semiconductor laser 127 is guided to the lens unit via the optical fiber 128. Since the lens unit is held on a stage that is movable on three axes of the xyz axis, the emitted light from the lens unit can be moved in the xyz axis direction. In this embodiment, a collimating lens 129 that spreads the guided laser beam into a parallel light 130 of φ10 mm is used for the lens unit. The parallel light 130 of φ10 mm emitted from the lens unit enters the vacuum chamber 137 through a quartz transparent window 131 having an antireflection film having a reflectance of 0.1% or less with respect to light having a wavelength of 808 nm. Light is guided.

  The substrate to be processed 132 is placed in a sample holder having a stepped hole and introduced into the vacuum chamber 137. The substrate to be processed 132 is heated by the laser heating apparatus having the above-described configuration. In this embodiment, a substrate to be processed 132 of 10 mm × 10 mm was introduced. As described above, since the lens unit of the semiconductor laser 127 has a movable mechanism on the three axes of the xyz axis, the position of the target substrate 132 and the laser is adjusted using a visible light pilot laser or the like provided in the semiconductor laser 127. Is possible.

  In the substrate temperature measurement, the radiation thermometer 136 measures the radiant heat from the surface of the substrate 132 to be processed, and measures the temperature. In the vacuum chamber 137, the temperature of the substrate to be processed 132 is measured by a radiation thermometer 136 from a quartz transparent window 135 provided at a position where the substrate to be processed 132 can be seen. As the measurement wavelength of the radiation thermometer 136, a wavelength of 1550 nm that is transparent with respect to the quartz transparent window 135 to be measured was selected. By selecting a wavelength different from that of the laser light source as the measurement wavelength of the radiation thermometer 136, it becomes possible to accurately measure the radiant heat of only the substrate.

  The semiconductor laser 127 can control the output of the emitted laser light to 0 to 140 W by adjusting the input current in the range of 0 to 40A. That is, the substrate temperature can be controlled by adjusting the input current to the semiconductor laser 127.

In the configuration of the present embodiment described above, the substrate to be processed 132 can be heated to 1400 ° C. or higher. At this time, the degree of vacuum can be maintained at 1.0 × 10 ⁻¹⁰ Torr or less, enabling high-temperature processing in an ultra-high vacuum atmosphere, enabling high-purity processing, thin film manufacturing, and semiconductor crystal growth.

[Example 2]
A molecular beam epitaxy apparatus using the present invention will be described. FIG. 5 shows an outline of a laser heating molecular beam epitaxy apparatus. As the laser light source, a semiconductor laser 139 having a wavelength of 808 nm and an optical output of 140 W was used. Laser light emitted from the semiconductor laser 139 is guided to the lens unit via the optical fiber 140. Since the lens unit is held on a stage that is movable on three axes of the xyz axis, the emitted light from the lens unit can be moved in the xyz axis direction. In the present embodiment, a collimating lens 141 that spreads the guided laser beam into parallel light 142 having a diameter of 10 mm is used for the lens unit. The parallel light 142 of φ10 mm emitted from the lens unit enters the vacuum chamber 150 through a quartz transparent window 143 having an antireflection film having a reflectance of 0.1% or less with respect to light having a wavelength of 808 nm. Light is guided.

  The substrate to be processed 144 is set on a sample holder having a stepped hole, and a metal body 145 is set on the back surface of the substrate to be processed 144. The metal body 145 is preferably made of a material that can efficiently absorb laser light, and preferably has a high degree of flatness so that heat conduction with the substrate to be processed 144 can be efficiently performed.

  The substrate to be processed 144 is heated by the laser heating apparatus having the above-described configuration. In this embodiment, a metal body 145 having the same size as the substrate to be processed 144 of 10 mm × 10 mm is introduced. As described above, since the lens unit of the semiconductor laser has a movable mechanism on three axes of the xyz axis, the position of the substrate to be processed 144 and the laser can be adjusted using a visible light pilot laser or the like provided in the semiconductor laser 139. Is possible.

  The substrate temperature is measured by measuring radiant heat from the surface of the substrate to be processed 144 using a radiation thermometer 149 and measuring the temperature. In the vacuum chamber 150, the temperature of the substrate to be processed 144 is measured by a radiation thermometer 149 from a quartz transparent window 148 provided at a position where the substrate to be processed 144 can be seen. As the measurement wavelength of the radiation thermometer 149, a wavelength of 1550 nm that is transparent with respect to the quartz transparent window 148 for measurement is selected. By selecting a wavelength different from that of the laser light source as the measurement wavelength of the radiation thermometer 149, it becomes possible to accurately measure the radiant heat of only the substrate.

  The semiconductor laser 139 can control the output of the emitted laser light to 0 to 140 W by adjusting the input current in the range of 0 to 40A. That is, the substrate temperature can be controlled by adjusting the input current to the semiconductor laser 139.

  FIG. 6 is a graph showing the relationship between the output of the semiconductor laser and the temperature of the substrate to be processed when the substrate to be processed 144 is heated with laser light in this embodiment. As shown in FIG. 6, the substrate to be processed 144 can be heated to 1400 ° C. or higher in the configuration of this embodiment described above.

At this time, even if the substrate temperature is raised to 1000 ° C., the degree of vacuum inside the chamber does not deteriorate, and the degree of vacuum of 1.0 × 10 ⁻⁹ Torr or less can be maintained (see Table 1 and FIG. 7). ). That is, an ultra-high vacuum process can be performed, and a process with less impurities can be realized. Further, since heat generation inside the chamber can be suppressed as much as possible, damage and distortion due to heat inside the chamber can also be suppressed.

  As shown in Table 1 and FIG. 7, in this example, a slight deterioration in the degree of vacuum is observed from about 1100 ° C., but the growth temperature is at most about 1000 ° C. in crystal growth of semiconductors and the like. By using the configuration, high-temperature processing can be performed under sufficiently high ultra-high vacuum.

In this embodiment, the degree of vacuum is 1.0 × 10 ⁻⁹ Torr or less, but the degree of vacuum is sufficient even in a process that requires impurity control such as semiconductor crystal growth, and the degree of vacuum is 1.0 × 10 ⁻¹⁰ Torr. Since there is no difference from the characteristics of the semiconductor crystal obtained below, it is not necessary to make the evacuation system complicated. Further, when the degree of vacuum is greater than 1.0 × 10 ⁻⁹ Torr, many impurities are taken into the semiconductor crystal and the characteristics of the semiconductor crystal are deteriorated.

In this embodiment, the degree of vacuum is 1.0 × 10 ⁻⁹ Torr or less. However, by optimizing the design of the metal body 145 and the configuration of the vacuum chamber 150, 1.0 × 10 ⁻¹⁰ Torr or less. Can be achieved. Further, the deterioration of the vacuum degree is due to the fact that the inside of the chamber is heated by the radiant heat from the substrate to be processed 144 because the substrate to be processed 144 has become high temperature, and the effect of the present invention does not reach. This problem can be improved by optimizing the internal structure of the chamber.

  In this embodiment, by using the metal body 145 on the back surface of the substrate to be processed 144, the substrate to be processed 144 that is transparent to the laser light can be heated, and by selecting an appropriate metal body 145, the metal substrate 145 can be efficiently used. Heating is possible.

[Example 3]
Another embodiment of the molecular beam epitaxy apparatus using the present invention will be described. FIG. 8 shows an outline of a laser heating molecular beam epitaxy apparatus of another embodiment. As the laser light source, a semiconductor laser 152 having a wavelength of 808 nm and an optical output of 140 W was used. Laser light emitted from the semiconductor laser 152 is guided to the lens unit via the optical fiber 153. Since the lens unit is held by the stage 156 that is movable along the three axes of the xyz axis, the emitted light from the lens unit can be moved in the xyz axis direction. In this embodiment, a condensing lens 154 that condenses the guided laser beam is used in the lens unit. Since the configuration of this embodiment includes the stage 156 that is movable in the z direction, the focused light 155 emitted from the lens unit can be adjusted in the z direction to change the focal position of the laser beam. The processing substrate 158 can be heated locally by condensing or heated by scattering.
Similarly to the first embodiment, the condensed light 155 is vacuum chamber 163 through a quartz transparent window 157 provided with antireflection films on both sides with a reflectance of 0.1% or less with respect to light having a wavelength of 808 nm. It is guided to the inside.

  The substrate to be processed 158 is set in a sample holder having a stepped hole and introduced into the vacuum chamber 163. The substrate 158 to be processed is heated by the laser heating apparatus having the above-described configuration.

  In the substrate temperature measurement, the radiation thermometer 162 measures the radiant heat from the surface of the substrate to be processed 158 to measure the temperature. In the vacuum chamber 163, the temperature of the substrate to be processed 158 is measured by the radiation thermometer 162 from the quartz transparent window 161 provided at a position where the substrate to be processed 158 can be seen. As the measurement wavelength of the radiation thermometer 162, a wavelength of 1550 nm transparent to the quartz transparent window 161 for measurement was selected. By selecting a wavelength different from that of the laser light source as the measurement wavelength of the radiation thermometer 162, it becomes possible to accurately measure the radiant heat of only the substrate.

  In the configuration of this embodiment described above, high-temperature processing in an ultra-high vacuum atmosphere is possible, and a mechanism for moving the condensing lens 154 in a direction parallel to the laser optical axis is provided. It can be easily changed, and local heating can be performed by condensing the laser beam, and the entire surface can be heated by scattered light.

  In the configuration of this embodiment described above, the laser beam can be condensed and the sample can be locally heated. Therefore, a temperature gradient is generated in the surface of the substrate to be processed 158, and various temperature conditions are realized with one sample. it can. In addition, since the stage movable in the z direction is provided, the lens unit can be easily moved, and the maintainability is improved.

[Comparative Example 1]
FIG. 9 shows an outline of a resistance heating molecular beam epitaxy apparatus of a tantalum (Ta) heater as an example of heating by a resistance heating apparatus which is a conventional technique. In FIG. 9, reference numeral 165 denotes a resistance heater, 166 denotes a substrate temperature measurement thermocouple, 167 denotes a substrate to be processed, 168 denotes a manipulator, 169 denotes a molecular beam cell, 170 denotes a vacuum chamber, and 171 denotes a liquid nitrogen shroud. In the resistance heating device, since the heater as a heat source is inside the vacuum chamber, the degree of vacuum in the chamber is deteriorated by the outgas from the heater itself. In this comparative example, generation of outgas started from 400 ° C., and outgas of 1.0 × 10 ⁻⁸ Torr was generated at about 900 ° C. (see Table 1 and FIG. 7).

  Further, the resistance heating device of the Ta heater mentioned in this comparative example has a maximum heating temperature of about 900 ° C. and cannot obtain a high temperature of 1000 ° C. or higher. In addition, since the heater is energized and the entire substrate holder is heated, not only the holder but also the heater itself and its surroundings are heated, not only worsening the degree of vacuum but also damaging the apparatus itself.

It is a schematic block diagram which shows one Embodiment of the laser heating apparatus of this invention, and the apparatus for vacuum processes. It is a schematic block diagram which shows another embodiment of the laser heating apparatus of this invention, and the apparatus for vacuum processes. It is a schematic block diagram of the molecular beam epitaxy apparatus which is an example of the apparatus for vacuum processes of this invention. 1 is a schematic configuration diagram of a laser heating molecular beam epitaxy apparatus manufactured in Example 1. FIG. 3 is a schematic configuration diagram of a laser heating molecular beam epitaxy apparatus manufactured in Example 2. FIG. It is a graph which shows the relationship between the semiconductor laser output in the apparatus of Example 2, and a to-be-processed substrate temperature. It is a graph which shows the relationship between the substrate temperature in each apparatus of Example 2 and Comparative Example 1, and a vacuum degree. 4 is a schematic configuration diagram of a laser heating molecular beam epitaxy apparatus manufactured in Example 3. FIG. 2 is a schematic configuration diagram of a resistance heating molecular beam epitaxy apparatus manufactured in Comparative Example 1. FIG.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1,12,100 ... Laser heating apparatus, 2,13,101,137,150,163,170 ... Vacuum chamber, 3,102 ... Sample holder, 4,103 ... Light transmission window, 5,104 ... Sample, 6, DESCRIPTION OF SYMBOLS 106 ... Laser light source 7,107 ... Laser beam 8,108 ... Vacuum exhaust port, 9,109 ... Vacuum pump system, 10 ... Molecular beam epitaxy device (vacuum process device), 11,133,146,159,168 ... Manipulator, 14, 138, 151, 164, 171 ... Liquid nitrogen shroud, 15, 132, 144, 158, 167 ... Substrate, 16A, 16B, 134, 147, 160, 169 ... Molecular beam cell, 105 ... Metal Body, 127, 139, 152 ... semiconductor laser, 128, 140, 153 ... optical fiber, 129, 141 ... collimating lens, 130, 1 2 ... Parallel light, 131, 143, 157 ... Quartz transparent window, 135, 148, 161 ... Quartz transparent window, 136, 149, 162 ... Radiation thermometer, 156 ... Stage, 165 ... Resistance heater, 166 ... Substrate temperature measurement Thermocouple for use.

Claims (7)

A sample holder having a stepped hole attached in the vacuum chamber, a light transmission window provided in a vacuum chamber wall near the sample holder, and a laser light source arranged outside the vacuum chamber,
A metal body is placed on the back of the sample held in the hole of the sample holder, the metal body is heated by a laser, and the sample is heated by heat conduction from the metal body,
In addition, the laser heating device for a vacuum chamber is characterized in that the emitting end of the laser light source is movable and the laser light irradiation position can be changed while the laser light source body is fixed . 2. The vacuum according to claim 1 , wherein an emission end of the laser light source is movable, and the laser light source main body is fixed and movable in parallel with the optical axis of the laser. Laser heating device for chamber. A condensing lens is provided at an emission end of the laser light source, and the condensing lens is movable in parallel with the optical axis of the laser to change the focal position of the laser light. The laser heating apparatus for a vacuum chamber according to claim 2. A vacuum chamber, apparatus for vacuum process and having a laser heating apparatus for a vacuum chamber according to any one of claims 1 to 3 attached to the vacuum chamber. The vacuum process apparatus according to claim 4 , wherein an ultrahigh vacuum of 1.0 × 10 ⁻⁹ Torr or less is obtained in a temperature range of 100 ° C. to 1400 ° C. 1.0 × 10 in the temperature range of 1000 ° C to 1400 ° C ^-9 The vacuum process apparatus according to claim 4, wherein an ultrahigh vacuum of Torr or less is obtained. The vacuum process apparatus according to claim 4 , wherein an ultrahigh vacuum of 1.0 × 10 ⁻¹⁰ Torr or less is obtained in a temperature range of 100 ° C. to 1400 ° C.

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