JP4952339B2 - Vacuum container, method of using vacuum container, and storage medium - Google Patents

Description

  The present invention relates to a technique for preventing contamination of a substrate when the substrate is processed or transported in a vacuum atmosphere.

  Examples of vacuum processing for performing processing on a substrate in a vacuum atmosphere include PVD (Physical Vapor Deposition) processing, CVD (Chemical Vapor Deposition) processing, etching processing, and the like. As an apparatus for performing such processing, for example, the above-described CVD apparatus will be described. A CVD apparatus 100 shown in FIG. 13 includes a mounting table 103 for mounting a substrate 102 and a vacuum pump 104 for evacuating the processing container 101 in a processing container 101 in a vacuum atmosphere. A heater and an electrostatic chuck (not shown) are embedded in the mounting table 103, and after reducing the pressure in the processing container 101, the processing gas is supplied from a gas shower head 105 provided on the top wall of the processing container 101. Then, the processing gas is decomposed on the substrate 102 by the heater of the mounting table 103 to form, for example, a metal film. The top wall of the processing container 101 is a substantially disk-shaped member, and is, for example, an O-ring 107 that is a resin sealing member housed in a groove 106 provided on the upper end surface of the side wall of the processing container 101. In addition, it is configured to be in airtight contact with the side wall of the processing vessel 101.

  At this time, since the degree of vacuum in the processing container 101 is very high (because the pressure is very low), the pressure difference between the inside and outside of the processing container 101 causes a gap between the side wall and the top wall of the processing container 101 and the O-ring 107. However, it is inevitable that a gas such as air from the outside slightly enters. Such a gas diffuses into the processing container 101 and, for example, collides with the inner wall of the processing container 101 or the surface of the substrate 102 and is then discharged from the lower side of the processing container 101 to the outside. This gas is oxygen gas, nitrogen gas, moisture, organic matter, and the like. When the gas collides with the surface of the substrate 102, the substrate 102 is contaminated. A malfunction such as an increase in the resistance value occurs. Such substrate contamination (deterioration due to substrate oxidation or the like is also treated as contamination) occurs not only in the processing container 101 but also in a vacuum transfer container.

  Patent Document 1 describes a technique in which a getter pump is provided in a vacuum chamber in order to suppress deterioration in film quality due to residual gas. However, problems with the gas flowing in from the outside of the vacuum chamber are studied. Not.

JP-A-2001-234326 ((0016) to (0017), FIG. 1)

  The present invention has been made under such circumstances. The purpose of the present invention is to process gas from the outside with respect to the substrate located in the vacuum vessel when processing or transporting the substrate in a vacuum atmosphere. An object of the present invention is to provide a vacuum vessel and a method of using the same that can suppress contamination of the substrate due to intrusion.

The present invention includes a cylindrical portion having an open upper surface, a ceiling wall portion provided so as to close the upper surface of the cylindrical portion, and an upper edge portion of the cylindrical portion and a peripheral edge portion of the ceiling wall portion. A container that is provided to hermetically seal the space and is formed of an O-ring formed in a ring shape along the circumferential direction of the cylindrical portion, and forms a vacuum chamber for performing vacuum processing on the substrate The body,
A mounting portion provided in the container body, for mounting the substrate, and a vacuum exhaust port for evacuating the container body;
A gas shower head provided on the top wall portion so as to face the mounting portion, and discharging a processing gas to the substrate in a shower shape;
The annular portion is formed annularly along the circumferential direction of the cylindrical portion at a radially outer position of the cylindrical portion than the gas discharge region of the gas shower head, and the gap between the cylindrical portion and the ceiling wall portion It is made of metal for adsorbing outgas entering the container body from the outside of the container body through the gap. The collector,
It is provided on the opposite side to the corner portion side of the collector, and includes a heating unit for heating the collector .

The vacuum treatment is a plasma treatment, and a plasma shield for protecting the collector from plasma may be provided on the substrate side of the collector .

  The present invention relates to a sealing member that seals the sealing member itself or a region facing the sealing member from the surface of the substrate on the mounting portion among the parts that seal the members constituting the vacuum vessel body with the sealing member. Since the collector is provided in the region facing the seal part (seal member) to adsorb the gas that has entered from the seal part, contamination of the substrate can be suppressed.

  A first embodiment in which a vacuum container of the present invention is applied to a vacuum processing apparatus will be described with reference to FIG. FIG. 1 is a cross-sectional view showing an example of a CVD apparatus 2 for forming a copper film, for example. The CVD apparatus 2 includes a container body 20 (vacuum chamber) made of, for example, aluminum. The container body 20 has a so-called mushroom in which an upper large diameter cylindrical portion 20a and a lower small diameter cylindrical portion 20b are connected in series. It is formed into a shape. In the container body 20, for example, a stage 21 that is a mounting portion for horizontally mounting a semiconductor substrate (hereinafter referred to as “wafer” W) is provided. The stage 21 is a bottom portion of the small-diameter cylindrical portion 20 b. It is supported by the support member 22.

  In the stage 21, a heater 21 a serving as a heating means for the wafer W and an electrostatic chuck (not shown) for attracting the wafer W are provided. Further, the stage 21 includes, for example, three elevating pins 23 (only two are shown for convenience) for elevating the wafer W and transferring the wafer W to / from a second transfer means 78 described later. It is provided so as to be able to project and retract with respect to the surface. The elevating pins 23 are connected to an elevating mechanism 25 outside the container body 20 via a support member 24. One end of an exhaust pipe 26 is connected to the bottom of the container body 20 as an exhaust port, and a vacuum pump 27 serving as a vacuum exhaust means is connected to the other end of the exhaust pipe 26. A transfer port 28 that is opened and closed by a gate valve G is formed on the side wall of the large-diameter cylindrical portion 20 a of the container body 20.

A gas shower head 32 is provided at the center of the top wall 31 of the container body 20 so as to face the stage 21. A gas supply port 37 for supplying a gas flowing through the gas shower head 32 to the wafer W is opened on the lower surface of the gas shower head 32. Further, a gas supply path 41 for supplying a processing gas is connected to the upper surface of the gas shower head 32.
A ring-shaped groove 42 is formed on the upper end surface of the wall surface of the container body 20, and a seal member 43, for example, a resin O-ring inserted into the groove 42, is interposed between the container body 20 and the container body 20. By pressing the upper end surface which is a member of the wall surface and the top wall portion 31 with a bolt or the like, the part is hermetically sealed. Note that the seal member 43 is actually crushed by the pressing force and the part is in close contact, but is shown schematically for convenience of illustration.

  Further, as shown in FIG. 2, a substantially ring-shaped collection body 44 made of a metal such as zirconium is provided on the lower side of the top wall portion 31, and this collection body 44 is disposed around the gas shower head 32. For example, it is configured to be supported by the top wall portion 31 by support members 45 provided at four locations in the circumferential direction (peripheral portion of the top wall portion 31). Further, as shown in FIG. 3, the collector 44 is formed so as to spread outward from the upper surface toward the lower surface so that the side surface (inclined portion) of the collector 44 faces the above-described seal member 43. Furthermore, it is provided between the wafer W and the seal member 43 (at a position visible from the surface of the wafer W). As a material constituting the collector 44, for example, a hydrogen storage alloy such as Ti, Mn, or Ni may be used in addition to the above-described zirconium.

As shown in FIGS. 2 and 3, the collector 44 has a heating portion 46 in which a heater as a heating means is embedded on its inner peripheral side, and as shown in FIG. It is connected. 2 and 3, the support member 45, the power source 46a, and the gas shower head 32 are omitted. Further, for simplification of illustration, the groove 42 is omitted in FIG.
As will be described later, when the inside of the container body 20 is depressurized, the collector 44 is formed between the upper end surface of the side wall of the container body 20 and the top wall portion 31 (seal member) due to a pressure difference between the inside and outside of the container body 20. In order to adsorb an external atmosphere such as air, moisture, organic matter, or an outgas component (O, F, C, etc.) released from a sealing material such as an O-ring. belongs to.

  The CVD apparatus 2 is provided with a control unit 11 composed of, for example, a computer, and this control unit 11 includes a data processing unit composed of a program, a memory, and a CPU. In this program, a command is incorporated so that a film forming process and transfer are performed on the wafer W by sending a control signal from the control unit 11 to each part of the CVD apparatus 2 and advancing each step described later. Further, for example, the memory includes an area in which values of processing parameters such as the temperature, holding time, gas flow rate, etc. of the wafer W and the collector 44 are written, and when the CPU executes each instruction of the program, A processing parameter is read out, and a control signal corresponding to the parameter value is sent to each part of the CVD apparatus 2. This program (including programs related to processing parameter input operations and display) is stored in the storage unit 12 such as a computer storage medium such as a flexible disk, a compact disk, an MO (magneto-optical disk), and a hard disk and installed in the control unit 11. The

  Next, an example using the above-described CVD apparatus 2 will be described with respect to the method of using the vacuum container of the present invention. First, the gate valve G is opened, the wafer W is placed on the stage 21 by a transfer arm (not shown), and the wafer W is sucked. Then, the gate valve G is closed, and the surface of the collector 44 is heated to a predetermined temperature, for example, 550 ° C. by the power source 46a. Here, when supplying the processing gas into the container body 20, for example, the inside of the container body 20 is once evacuated by the vacuum pump 27 (a butterfly valve (not shown) is fully opened), and the inside of the container body 20 has a predetermined degree of vacuum, for example, Evacuate to 6.65E-6Pa (5E-8 Torr). Thereafter, the power source 46a is turned off, and the temperature of the collector 44 is lowered to about room temperature. As the degree of vacuum in the container main body 20 increases, the pressure difference between the inside and outside of the container main body 20 increases, so as shown in FIG. 4, the space between the upper end surface of the side wall of the container main body 20 and the top wall portion 31 (seal An external atmosphere such as air (outgas such as oxygen, nitrogen or water) enters the container body 20 little by little from the periphery of the member 43. On the other hand, since the surface of the collector 44 is activated once by heating, that is, as described later, a large amount of pure metal zirconium is exposed on the surface, the activity (reactivity) of the collector 44. Further, since the side surface (surface) of the collector 44 is provided at a position facing (being close to) the seal member 43, the gas that has entered the container body 20 described above is trapped. It is adsorbed on the surface of the collection body 44 and further undergoes a chemical reaction with zirconium, and is taken into the collection body 44 as shown in FIG. That is, the collector 44 adsorbs gas (removes gas) and plays the role of a vacuum pump in a broad sense. It should be noted that deposits and the like adhering to the inner wall of the container main body 20 due to film formation are adsorbed together with the above gas when flowing into the collector 44.

  As described above, after the atmosphere in the container body 20 is exhausted by the vacuum pump 27 and the collector 44, the inside of the container body 20 is depressurized to a predetermined degree of vacuum, for example, 1.33E-4 Pa (1E-6 Torr). The processing gas containing, for example, an organic gas containing copper is supplied from the gas supply path 41, and the processing gas is decomposed on the wafer W by heating the wafer W to a predetermined temperature by the heater 21a and holding it for a predetermined time. Then, for example, a copper film is formed. During the film formation, the gas entering the container body 20 is adsorbed by the collector 44, and the processing gas is also slightly adsorbed. However, since the amount of the processing gas flowing in the vicinity of the collector 44 (the inner wall side of the container body 20) is extremely small, it does not particularly adversely affect the film formation and the gas adsorption of the collector 44.

  Thereafter, film formation is similarly performed on a predetermined number of wafers W. At this time, even when the collector 44 is not heated every time the wafer W is formed, when the gas adsorbed on the surface of the collector 44 increases, that is, when the gas adsorption capacity of the collector 44 has decreased (for example, During the maintenance of the CVD apparatus 2, as shown in FIG. 5B, the collector 44 may be heated. By heating, gases such as oxygen and nitrogen that have been taken in the vicinity of the surface of the collector 44 diffuse into the collector 44, and the concentration on the surface of the collector 44 decreases. Therefore, the gas adsorbing ability of the collector 44 is recovered, and the gas is adsorbed again as shown in FIG. After a plurality of uses, when the gas adsorption ability is not recovered by heating, the collector 44 itself is replaced.

  If the gas diffusion rate in the collector 44 is high depending on the characteristics of the material constituting the collector 44 or the type of gas, the collector 44 may not be heated or the collector 44 may be heated. However, the gas may be adsorbed. Further, in the collector 44, as described above, the adsorbed gas is taken in as zirconium oxide or zirconium nitride. However, in FIG. 5, for simplification of illustration, the gas is shown by element name. ing.

  According to the above-described embodiment, the seal member 43 itself or the region facing the seal member 43 is located from the surface of the wafer W on the stage 21 in the portion where the members constituting the container body 20 are sealed by the seal member 43. Since the collector 44 is provided in the region facing the seal part (seal member 43) with respect to the seal member 43 that can be seen, the gas that has entered from the seal part is adsorbed, so that contamination of the wafer W can be suppressed. it can. In addition, since the collector 44 is used to further reduce the pressure from the high degree of vacuum after the inside of the container body 20 is reduced by the vacuum pump 27, a desired high vacuum state can be quickly obtained. The required time is shortened and the throughput is improved.

  In the above example, the collection body 44 is provided along the entire circumference of the upper end surface of the side wall of the container body 20 corresponding to the seal member 43. The collection body 44 is provided along the circumferential direction. As long as it is provided, it does not necessarily have to be provided over the entire circumference. In addition, the heating section 46 is pasted on the inner peripheral surface of the roughly ring-shaped collector 44 that has a rectangular longitudinal cross-sectional shape and gradually increases from the upper surface toward the lower surface. As shown in FIG. 6, a collector 44 having a ring-shaped longitudinal section may be provided so as to surround a heating section 46 having a circular longitudinal section. Also in such a collector 44, the gas which enters into the container main body 20 from between the upper end surface of the side wall of the container main body 20 and the top wall part 31 can be adsorbed similarly to the above-described embodiment. In such a configuration, since the collection body 44 is formed so as to surround the heating unit 46, the distance between the collection body 44 and the seal member 43 is suppressed while suppressing a decrease in the area of the collection body 44 facing the seal member 43. Therefore, more gas can be adsorbed and the amount of gas flowing into the container body 20 (which cannot be captured by the collector 44) can be suppressed.

  As the above-mentioned CVD apparatus 2, the heater 21a in the stage 21 is used as an energy source for decomposing the processing gas. For example, the processing gas may be converted into plasma by supplying a high frequency or the like. Alternatively, the collector 44 may be protected from plasma. An example thereof will be described with reference to FIG.

  FIG. 7 shows, as a second embodiment, a CVD apparatus 3 in which a plasma generating means 48 composed of, for example, a high frequency power source or a matching device is connected to a gas shower head 32. The processing gas supplied into the inside is made into plasma. Further, a plasma shield 47 formed coaxially with the collection body 44 and having a lower end surface lower than the collection body 44 (to be close to the wafer W) is formed on the inner peripheral portion of the collection body 44 by the support member 47a. It is supported by the wall portion 31. As described above, the plasma shield 47 is for protecting the collector 44 from plasma of the processing gas. Although the container body 20 is grounded, it is omitted in the figure.

  In the CVD apparatus 3 having such a configuration, it is possible to suppress the deterioration of the collector 44 due to plasma and to adsorb the gas entering the container body 20 as in the CVD apparatus 2 described above. Also in this example, as shown in FIG. 6 described above, the vertical cross-sectional shape of the collector 44 may be a ring shape. Further, as an apparatus using such plasma, not only the CVD apparatus 3 but also a PVD apparatus or an etching apparatus, for example, may be used. The plasma shield 47 may be attached to the inner surface of the collector 44 (the inner surface of the heating unit 46).

  Moreover, although the above example demonstrated the case where the gas which penetrates in the container main body 20 from between the upper end surface of the side wall of the container main body 20 and the top wall part 31 was adsorbed, in addition to such a structure, the wafer W When a member for vacuum-sealing between the inside of the container body 20 and the outside is provided at a position that can be seen from the surface, gas enters the container body 20 from that location, so such a member. You may provide the collector 44 in the position which faces. Such an example will be described with reference to FIG.

  FIG. 8 shows a CVD apparatus 4 according to the third embodiment, and this CVD apparatus 4 includes a collector 44 having the same configuration as the collector 44 described above. The CVD apparatus 4 includes a detection head 51 for optically detecting the peripheral edge of the wafer W, for example. An opening 52 is opened on the side wall of the container body 20, and a drive shaft 53 that communicates from the outside of the container body 20 into the container body 20 is provided through the opening 52. The above-described detection head 51 is connected to one end side of the drive shaft 53 in the container main body 20, and the detection head 51 detects the peripheral edge of the wafer W on the other end side outside the container main body 20. Between the detection position and the retracted position close to the inner wall of the container body 20, a drive unit for moving the drive shaft 53 in the horizontal direction, and a CCD camera for processing signals detected by the detection head 51 Etc. are connected. Further, a seal member 43a for keeping the inside of the container main body 20 airtight is interposed between the detection device 54 and the outer wall of the container main body 20. The detection device 54 is sealed by a bolt or the like (not shown). It is brought into close contact with the outer wall of the container body 20 via the member 43a. The position of the seal member 43a is not particularly limited to the above position, and may be any position that keeps the container main body 20 airtight, that is, the oxygen or nitrogen gas described above from the opening 52 is the container main body 20. Any configuration that does not cause a risk of entering the inside may be used.

A ring-shaped collection body 44a is provided in the container body 20 at a position facing the seal member 43a, that is, so as to surround the drive shaft 53, and the collection body 44a is supported by the support member 45a. It is supported by the inner wall. Moreover, this collector 44a is provided with the heating means (not shown) connected to the power supply 46b similarly to the collector 44 described above.
In such a CVD apparatus 4, for example, after the wafer W is placed on the stage 21, the detection head 51 moves from the retracted position to the detection position, and detects the peripheral edge of the wafer W, whereby the wafer W After the position is detected, as described above, the inside of the container body 20 is decompressed and film formation is performed. Also at this time, the gas entering the container body 20 from between the upper end surface of the wall surface of the container body 20 and the top wall portion 31 is adsorbed by the collector 44. Further, the gas entering the container body 20 from the opening 52 is adsorbed by the collector 44a.

  As described above, even when the opening 52 is formed at a position visible from the surface of the wafer W on the wall surface of the container main body 20, the opening 52, that is, the sealing member 43a for vacuum-sealing the opening 52 is provided. By providing the collector 44a so as to face, the same effect as the above-described embodiment can be obtained.

  In forming the opening 52, the detection head 51 is connected to one end side of the drive shaft 53 that is movable in the horizontal direction in order to detect the peripheral edge of the wafer W, but the substrate is transported to the drive shaft 53 that can be rotated. A robot or the like may be connected. Further, when the drive shaft 53 performs an operation such as movement or rotation, the drive shaft 53 includes a lubricant such as grease made of organic matter for lubricating the operation of the drive shaft 53 in the detection device 54. Since the lubricant is applied, the lubricant may volatilize and enter the container body 20. However, the collector 44a can also adsorb a permeating component such as the lubricant. Even when the container main body 20 is provided with a drive mechanism and the drive shaft 53 extends from the drive mechanism, the seal member 43a between the container main body 20 and the drive mechanism is connected to the drive shaft 53 and the container main body 20. It corresponds to the seal member 43a provided between the constituent members.

  Further, the present invention is not limited to such an example. As shown in FIG. 9, for example, when the window 58 is provided for observing the inside of the container body 20 or measuring the temperature of the wafer W with an infrared sensor. The collector 44a may be further provided at a position visible from the surface of the wafer W in the container body 20 so as to face the seal member 59 for vacuum-sealing the window 58.

  In the above example, the collectors 44 and 44a are configured to chemically adsorb gas, but may be physically adsorbed. An example thereof will be described with reference to FIG.

  FIG. 10 shows a CVD apparatus 5 according to the fourth embodiment. Note that the overall configuration of the CVD apparatus 5 is the same as that of the above-described CVD apparatus 2, and is not shown. As in the first embodiment, a seal member 43 is provided in the container main body 20 of the CVD apparatus 5, and has the same shape as the collector 44 described above so as to face the seal member 43. A collector 44b is installed. The collector 44b is made of, for example, copper in order to increase the thermal conductivity, and the surface thereof is coated with, for example, chromium to prevent oxidation. good. Also, for example, four openings 55 are opened at equal intervals in the circumferential direction so as to face the inclined surface of the collector 44 b on the top wall 31 of the container body 20. The refrigerator 56 provided on the top surface of the top wall 31 and the collector 44b are connected by a shaft 57. Moreover, the refrigerator 56 is airtightly joined to the top wall portion 31 by the seal member 43b. The collector 44b is configured to be cooled to about 10 to 20 K (−263 to −253 ° C.) by the refrigerator 56 through the shaft 57, for example.

  Also in such a collector 44b, the gas that enters the container body 20 from between the upper end surface of the side wall of the container body 20 and the top wall portion 31 is adsorbed in the same manner as the collectors 44 and 44a described above. In this case, as described above, the gas is physically adsorbed on the collector 44b. That is, as shown in FIG. 11 (a), the gas that has entered the container body 20 is deprived of heat by the collector 44b as it gets closer to the collector 44b, and then the diffusion rate becomes slow, and then the liquid becomes solid. Adsorbed on the surface of the collector 44b. Since the gas adsorbed on the surface of the collector 44b is only physically adsorbed, it does not diffuse inside the collector 44b and remains on the surface. When a predetermined amount of gas is adsorbed and the gas adsorption capacity of the collector 44b is lowered, as shown in FIG. 11B, for example, during the maintenance of the CVD apparatus 5, the cooling of the collector 44b is stopped. By returning the collector 44b to room temperature and desorbing the gas from the surface of the collector 44b, the gas adsorbing ability is restored as shown in FIG.

  Also in this CVD apparatus 5, the same effect as the above-described CVD apparatus 2 can be obtained. Further, as described above, gas adsorption in the collector 44b is physical adsorption and is a reversible reaction. Therefore, the frequency of exchanging the collector 44b can be suppressed by repeating gas adsorption and desorption. The collector 44b may have a shape as shown in FIG. 6, or a plasma shield 47 shown in FIG. 7 may be added to the collector 44b. Further, the collector 44b may be installed at a position facing the seal member 43a shown in FIGS.

In the above embodiment, the vacuum container according to the present invention has been described as the container main body 20 on which film formation and etching are performed, but it may be a container that simply carries the wafer W. Examples thereof will be described below.
The above-described CVD apparatuses 2 to 5 are connected to a substrate processing apparatus 71 called a cluster tool or a multi-chamber shown in FIG. 12, for example. The substrate processing apparatus 71 includes a carrier chamber 72, a first transfer chamber 73, a load lock chamber 74, a second transfer chamber 75, a plurality of, for example, four CVD apparatuses 2, and a gate valve G for opening and closing each of these chambers. It has. The load lock chamber 74 is provided with a vacuum pump and a leak valve (not shown), between the inside of the first transfer chamber 73 which is atmospheric pressure and normal pressure, and the second transfer chamber 75 of vacuum atmosphere. The wafer W can be transferred. The first transfer chamber 73 and the second transfer chamber 75 are provided with a first transfer means 77 and a second transfer means 78, respectively. And the wafer W are transferred between the load lock chamber 74 and the CVD apparatus 2.
In the substrate processing apparatus 71, the wafer W is unloaded from the carrier chamber 72 to the first transfer chamber 73, loaded into the CVD apparatus 2 via the load lock chamber 74 and the second transfer chamber 75, and the above-described description. After the film formation is performed, the film is returned to the carrier chamber 72 through a path opposite to the carried-in path.

  In the substrate processing apparatus 71, the second transfer chamber 75 and the load lock chamber 74 are also composed of a plurality of members, and these members are vacuum-sealed and the inside is decompressed. The collector 44 may be provided at a position facing the body and visible from the surface of the wafer W. In that case, the mounting unit in the claims refers to a mounting table (not shown) provided in the load lock chamber 74 or the second transfer means 78 in the second transfer chamber 75. The “position visible from the surface of the wafer W” in the second transfer chamber 75 means “from the surface of the wafer W when the wafer W is transferred by the second transfer means 78 in the second transfer chamber 75. "Visible position".

  As described above, in the present invention, by providing the collector 44 at a position facing the place where the impurity gas is generated (place entering the container body 20) and visible from the surface of the wafer W, the wafer W is provided. Inflow of impurities into the can be suppressed.

It is a longitudinal cross-sectional view which shows an example of the CVD apparatus to which the vacuum container of this invention was applied. It is a perspective view which shows an example of the collector provided in said CVD apparatus. It is a longitudinal cross-sectional view which shows an example of said collector. It is a longitudinal cross-sectional view which shows a mode that gas is chemisorbed in said collector. It is a longitudinal cross-sectional view which shows a mode that gas is chemisorbed in said collector. It is a longitudinal cross-sectional view which shows the other structural example of said collector. It is a longitudinal cross-sectional view which shows the other structural example of said CVD apparatus. It is a longitudinal cross-sectional view which shows the other structural example of said CVD apparatus. It is a longitudinal cross-sectional view which shows the other structural example of said CVD apparatus. It is a longitudinal cross-sectional view which shows the other structural example of said CVD apparatus. It is a longitudinal cross-sectional view which shows a mode that gas is physically adsorbed in said CVD apparatus. It is a horizontal sectional view which shows an example of the substrate processing apparatus provided with said CVD apparatus. It is a longitudinal cross-sectional view which shows an example of the conventional CVD apparatus.

Explanation of symbols

2 CVD apparatus 20 processing container 21 stage 26 exhaust pipe 27 vacuum pump 31 top wall part 42 groove 43 seal member 44 collector 46 heating part

Claims (2)

An airtight seal is formed between a cylindrical portion having an open upper surface, a ceiling wall portion provided so as to close the upper surface of the cylindrical portion, and an upper edge portion of the cylindrical portion and a peripheral edge portion of the ceiling wall portion. A container body that is provided for sealing and is formed in a ring shape along the circumferential direction of the cylindrical portion, and that forms a vacuum chamber for performing vacuum processing on the substrate ;
A mounting portion provided in the container body, for mounting the substrate, and a vacuum exhaust port for evacuating the container body;
A gas shower head provided on the top wall portion so as to face the mounting portion, and discharging a processing gas to the substrate in a shower shape;
The annular portion is formed annularly along the circumferential direction of the cylindrical portion at a radially outer position of the cylindrical portion than the gas discharge region of the gas shower head, and the gap between the cylindrical portion and the ceiling wall portion It is made of metal for adsorbing outgas entering the container body from the outside of the container body through the gap. The collector,
A vacuum vessel comprising: a heating unit provided on the opposite side of the collecting body from the corner portion side for heating the collecting body . 2. The vacuum container according to claim 1 , wherein the vacuum treatment is a plasma treatment, and a plasma shield is provided on the substrate side of the collector for protecting the collector from plasma.

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