JP4957992B2 - Magnetron sputtering apparatus and film forming method using the same - Google Patents

Description

  The present invention relates to a magnetron sputtering apparatus in which a magnetic field forming unit is small and simplified, and a film forming method using the same.

  Sputtering is a general technique for forming a thin film of metal or the like on the surface of glass, ceramics, plastics, metals, or other materials. Sputtering apparatuses that perform such processes are optical information recording media, semiconductor devices, and electrical / electronic components. It is widely used as a film forming apparatus in various fields as well as electrode films such as electrode films and functional films.

  Among such sputtering apparatuses, a magnetron sputtering apparatus that generates a magnetic field on a target and forms a high-density region (erosion) of plasma in the vicinity of the target by this magnetic field is excellent in film forming efficiency and has a high film forming speed. Therefore, it has become the mainstream of recent sputtering apparatuses.

  Here, an outline of a configuration of a general magnetron sputtering apparatus will be described with reference to FIG. A vacuum pump 10 is connected to the vacuum chamber 10 of the magnetron sputtering apparatus shown in FIG. 6 to introduce an exhaust port 11 for exhausting the gas in the vacuum chamber 10, an inert gas such as argon, a predetermined mixed gas, or the like. It has a gas introduction path 12 for this purpose.

  One side of the vacuum chamber 10 is provided with an anode electrode 14 having a work holding part to which a work 13 such as a substrate can be attached. A cathode electrode 16 is disposed at a position facing the anode electrode 14. The cathode electrode 16 is supported by the cathode housing 16 a having the magnetic field forming unit 20 and the target 15 can be placed on a flat holding surface on the cathode electrode 16.

  The cathode housing 16a is fixed to the cathode shield portion 10a of the vacuum chamber 10 via an insulating material (not shown). At this time, the target 15 installed on the cathode electrode 16 is exposed toward the inside of the vacuum chamber 10 from the opening of the cathode shield part 10a. In addition, a power source 19 is connected to the cathode electrode 16 via the cathode housing 16a, and the anode electrode 14 is grounded via the vacuum chamber 10, so that a voltage can be applied between both electrodes. .

  When the target 15 is a disk, the magnetic field forming unit 20 in the cathode housing 16a fixes a columnar permanent magnet 22 at the center of the disk-shaped yoke material and an annular permanent magnet 23 around it. Form. The polarities of the permanent magnets 22 and 23 at this time are such that the north pole of the central permanent magnet 22 is on the target 15 side and the south pole of the surrounding permanent magnet 23 is on the target 15 side. Then, the magnetic field forming unit 20 is disposed close to the cathode electrode 16 so that the magnetic field generated by the permanent magnets 22 and 23 leaks onto the surface of the target 15. 6 schematically represents the lines of magnetic force generated by the magnetic field forming unit 20. Further, the cathode housing 16a may be given a function of cooling the target 15 by flowing the cooling water 8 into the cathode housing 16a.

  In order to operate the magnetron sputtering apparatus to form a predetermined thin film on the surface of the work 13, first, the predetermined work 13 is set on the anode electrode 14 and the predetermined target 15 is set on the cathode electrode 16. Next, after the air in the vacuum chamber 10 is exhausted through the exhaust port 11, a predetermined gas is introduced from the gas introduction path 12, thereby making the inside of the vacuum chamber 10 a low pressure discharge gas atmosphere. Next, predetermined power is supplied from the power source 19 to the cathode electrode 16. Thereby, glow discharge is generated between the cathode electrode 16 and the anode electrode 14, and plasma is generated in the vacuum chamber 10. The generated plasma is confined and converged on the surface of the target 15 by the magnetic field from the magnetic field forming unit 20, and forms an erosion where the plasma density is locally high. The positive ions in the plasma are attracted toward the cathode electrode 16 that is the cathode, and collide with the surface of the target 15 disposed on the cathode electrode 16. By this collision, atoms of the target 15 are ejected, and a predetermined thin film is formed on the surface of the work 13 by adhering and depositing on the surface of the work 13 held on the anode electrode 14 side. In the magnetron sputtering apparatus, since a high-density region (erosion) of plasma is formed on the surface of the target 15 as described above, positive ions in the plasma can be efficiently collided with the target 15. For this reason, the magnetron sputtering apparatus is excellent in film forming efficiency and has a high film forming speed.

  As an example of the magnetron sputtering apparatus as described above, in the device disclosed in [Patent Document 1] below, a magnetic field forming unit having a special structure is designed, and a strong toroidal magnetic field is formed on the surface of the target to form a film formation efficiency. Is further improved.

  Further, in the invention disclosed in [Patent Document 2] below, as shown in FIG. 7, the magnetic field forming unit 20 (first magnet and second magnet in Patent Document 2) smaller than the size of the target 15 is supported by the support base 25. A mechanism for fixing the magnetic field forming unit 20 eccentrically about the center O1 of the support base 25 is provided. With this mechanism, the invention disclosed in [Patent Document 2] makes it possible to change the erosion formation position, and prevents the target 15 from being locally cut, thereby improving the utilization efficiency of the target 15. it can.

Japanese Utility Model Publication No. 05-20303

Japanese Patent Laid-Open No. 05-179441

  As described above, the magnetron sputtering apparatus must generate a sufficient magnetic field on the surface of the target 15 in order to cause erosion. In order to form a magnetic field sufficient to cause erosion on the surface of the target 15, in addition to disposing the magnetic field forming part close to the target 15, FeNdB (iron, neodymium, boron), It is preferable to use an expensive rare earth magnet such as CoSm (cobalt samarium).

  However, the yoke-type magnetic field forming unit 20 used in the devices and inventions disclosed in [Patent Document 1] and [Patent Document 2] requires two or more permanent magnets to be used. Use of a magnet or the like leads to an increase in cost, and thus an inexpensive magnetic field forming unit is desired instead.

  In many cases, a cooling unit that cools the target 15 by flowing cooling water is provided in the cathode housing 16a under the cathode electrode 16 on which the target 15 is installed. Therefore, in order to place the magnetic field forming unit close to the target 15, it is necessary to install the magnetic field forming unit in the cooling unit, that is, in the cooling water. However, when the magnetic field forming unit is installed in the cooling water, as in the device disclosed in [Patent Document 1], if the magnetic field forming unit 20 is large, there is a case where a sufficient amount of water sufficient to cool the target 15 cannot be secured. . Further, when a mechanism for driving the magnet portion is provided as in the invention disclosed in [Patent Document 2], the seal of the seal portion is worn due to long-term friction of the drive shaft portion, and cooling water leaks. Therefore, the improvement is desired.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a magnetron sputtering apparatus using a magnetic field forming unit having a simple structure with a low cost and a film forming method using the same.

The present invention
In magnetron sputtering equipment,
A vacuum chamber 10;
A cathode electrode 16 provided in the vacuum chamber 10 and having a flat holding surface for holding a target 15 made of a predetermined material;
An anode electrode 14 disposed opposite to the holding surface with a predetermined gap;
A magnetic field forming portion 30 provided on the opposite side of the cathode electrode 16 from the anode electrode 14 to form a predetermined magnetic field;
Have
The magnetic field forming unit 30 includes a magnet having a magnetic axis along a direction substantially orthogonal to the holding surface, and is generated from one magnetic pole of the magnet when the target 15 is held by the holding surface. The above problem is solved by providing a magnetron sputtering apparatus in which magnetic field lines are arranged to pass through the target 15 and converge to the other magnetic pole of the magnet.

Further, moving means for moving the magnetic field forming unit 30 along the holding surface while maintaining the direction of the magnetic axis,
The above-mentioned problems are solved by providing the magnetron sputtering apparatus described above.

  The magnetron sputtering apparatus according to claim 1, wherein a cooling water channel 8c through which the cooling water 8 flows is provided on the opposite side of the cathode electrode 16 from the anode electrode 14 so as to surround the magnetic field forming unit 30. By providing, the above-mentioned problems are solved.

Further, a moving means for moving the magnetic field forming unit 30 along the direction of separating from and contacting the holding surface,
The above-mentioned problems are solved by providing the magnetron sputtering apparatus described above.

Furthermore, it is a film forming method using any of the above magnetron sputtering devices,
The anode electrode 14 has a work holding part for holding the work 13 on the cathode electrode 16 side,
By providing a film forming method using a magnetron sputtering apparatus that forms the predetermined material on the surface of the work 13 from the target 15 in a state where the work 13 is held by the work holding unit. Resolve.

The magnetron sputtering apparatus and the film forming method using the same according to the present invention are configured as described above.
(1) The number of permanent magnets can be reduced, so that the cost can be reduced and the structure of the magnetic field forming unit can be simplified.
(2) Since the structure of the magnetic field forming unit is simple, even if the magnetic field forming unit is installed in the cooling water, the flow of the cooling water is not hindered and the cooling capacity of the cooling unit is not impaired.
(3) Since the magnetic field formed by the magnetic field forming unit is also generated outside the magnetic field forming unit, the magnetic field forming unit does not need to move below the outer edge of the target. Therefore, it is possible to provide a cooling unit in the space, and it is possible to achieve both the cooling of the target and the proximity of the magnetic field forming unit to the target without installing the magnetic field forming unit in the cooling water. As a result, the cost for waterproofing the cooling unit and the maintenance work for the magnetic field forming unit and the like can be reduced.
(4) The film forming method using the magnetron sputtering apparatus according to the present invention can efficiently form a good film while using a low-cost magnetron sputtering apparatus.

  An embodiment of a method for producing an optical information recording medium according to the present invention will be described with reference to the drawings. FIG. 1 is a schematic configuration diagram of a first embodiment of a magnetron sputtering apparatus according to the present invention. FIG. 2 is a schematic configuration diagram of a second embodiment of the magnetron sputtering apparatus according to the present invention. FIG. 3 is a schematic configuration diagram of a third embodiment of the magnetron sputtering apparatus according to the present invention. FIG. 4 is a schematic configuration diagram of a fourth embodiment of the magnetron sputtering apparatus according to the present invention. FIG. 5 is a view for explaining film formation by a magnetron sputtering apparatus according to the present invention. The portions other than those related to the magnetic field forming unit of each embodiment shown here are basically the same as those of the prior art shown in FIG. The same members as those in the prior art are denoted by the same reference numerals.

  In the magnetron sputtering apparatus according to the first embodiment of the present invention shown in FIG. 1, a magnetic field forming unit 30 made of one permanent magnet is installed close to the target 15 under the cathode electrode 16 in the cathode housing 16 a. At this time, the magnetic lines of force (broken lines in FIG. 1) generated by the magnetic field forming unit 30 are obtained by setting the magnetic axes of the magnets constituting the magnetic field forming unit 30 to be substantially the same direction as the direction perpendicular to the surface of the target 15. From the magnetic pole on the target 15 side of the magnetic field forming unit 30, it reaches the side of the magnetic field forming unit 30 through the surface of the target 15, and further from the side of the magnetic field forming unit 30 to the side opposite to the target 15 of the magnetic field forming unit 30. It converges to the magnetic pole. Due to the magnetic field from the magnetic field forming unit 30, the magnetron sputtering apparatus according to the present invention can form erosion on the target 15, and can form a thin film at a high film formation rate as in the conventional apparatus. Further, since the number of magnets used for the magnetic field forming unit 30 is small, the cost of the magnetic field forming unit 30 can be reduced.

  In FIG. 1 and FIGS. 2 to 5 described later, the N pole of the magnetic field forming unit 30 is the target 15 side, but the S pole may be the target 15 side. Further, in FIG. 1 and FIGS. 2 to 5 to be described later, an example in which the magnetic field forming unit 30 is a permanent magnet is shown. However, a magnet constituting the magnetic field forming unit 30 may be an electromagnet. If the magnetic field forming unit 30 is an electromagnet, the strength of the magnetic field for forming the erosion can be electrically controlled.

  The cathode housing 16a also serves as a cooling unit for the target 15. The cooling water 8 is supplied from the water supply pipe 8a into the cathode housing 16a and discharged from the drain port 8b, so that the inside of the cathode housing 16a is cooled with the cooling water 8. The target 15 is allowed to flow at a predetermined flow rate while being filled, and the target 15 is cooled via the cathode electrode 16.

  Even in such a case, the magnetic field forming unit 30 installed in the cathode housing 16a has a simple structure and does not have a concave portion or a large gap, so that a sufficient amount of the cooling water 8 can flow without stopping. The cooling ability of the cooling unit to the target 15 is not impaired.

  The magnetic field forming unit 30 is arranged close to the cathode electrode 16 between the cooling water channels provided under the outer edge of the target 15 as in a third embodiment to be described later, and the magnetic field forming unit 30 is not installed in the cooling water. It is also good.

  Furthermore, the shape of the end surface of the magnet used for the magnetic field forming unit 30 is preferably circular when the target 15 is circular, and similarly rectangular when the target 15 is square. However, it is not necessary to limit to this, It can be set as arbitrary shapes, such as a polygon, an ellipse, a rod shape, and a radial shape, and it is also possible to combine several shapes. If the shape of the end face of the magnet used for the magnetic field forming unit 30 is designed in consideration of the generated magnetic field, the magnetic field is biased outward, the magnetic field formation range is expanded or reduced to some extent, or a magnetic field is generated in a specific region. Thus, the erosion formation position can be controlled to some extent. In addition, when the end face shape and arrangement position of the magnetic field forming unit 30 are not circular, the erosion forming position is changed each time by changing the horizontal angle of the target 15 surface, etc. It is also possible to improve the utilization efficiency.

  Next, FIG. 2 shows a second embodiment of the magnetron sputtering apparatus according to the present invention. The magnetron sputtering apparatus of the second embodiment has a shaft hole of a predetermined diameter at a position substantially the same as the center axis of the target 15 below the cathode housing 16a, and the rotary shaft 34 is movable in the shaft hole. Inserted. At this time, a waterproof measure such as packing (not shown) is applied to the shaft hole to prevent leakage of the cooling water 8 flowing in the cathode housing 16a.

  A base plate 32 is fixed to the upper end of the rotating shaft 34, and a permanent magnet that is the magnetic field forming unit 30 is installed on the base plate 32. At this time, the magnetic field forming unit 30 shifts the center of the magnetic field forming unit 30 from the center of the rotation shaft 34 and is installed at a position where the magnetic field lines A outside the magnetic field forming unit 30 are applied to the outer edge of the target 15.

  The lower end of the rotating shaft 34 is connected to a driving device 36 so as to be able to rotate. When the driving device 36 is operated, the rotating shaft 34 and the base plate 32 are rotated. When the base plate 32 rotates, the magnetic field forming unit 30 rotates eccentrically by a distance shifted from the center of the rotation shaft 34 so as to be substantially parallel to the surface of the target 15 under the cathode electrode 16. The position of the magnetic field formed on the surface of the target 15 is also rotated by the rotational movement of the magnetic field forming unit 30, and the erosion forming position is moved accordingly. For this reason, the position of the target 15 to be cut by collision with positive ions in the plasma is dispersed, and the utilization efficiency of the target 15 can be improved.

  Also in the second embodiment, as in the first embodiment, the structure of the magnetic field forming unit 30 can be simplified and the number of permanent magnets to be used can be reduced.

  2 shows an example in which the target 15 is circular, but when the target 15 has a square shape, the base plate 32 on which the magnetic field forming unit 30 is installed is moved in a direction parallel to the surface of the target 15. Alternatively, the use efficiency of the target 15 can be similarly improved by swinging.

  Next, the magnetron sputtering apparatus of the 3rd form which concerns on this invention is shown in FIG. In the magnetron sputtering apparatus of the third embodiment, the magnetic field forming unit 30 and its drive system and cooling unit are separated using the cathode housing 16b provided with the cooling water channel 8c through which the cooling water 8 flows in the lower part of the outer edge of the target 15. It is configured.

  Since the conventional yoke-type magnetic field forming unit 20 forms a magnetic field between the central permanent magnet 22 and the outer permanent magnet 23, erosion is formed in a region on the magnetic field forming unit 20. Therefore, in order to perform sputtering using the entire surface of the target 15 effectively, it is necessary to move the magnetic field forming unit 20 over the entire region under the target 15.

  However, in the magnetron sputtering apparatus according to the present invention, the lines of magnetic force generated from the magnetic pole surface (end face) of the magnetic field forming unit 30 pass outside the magnetic field forming unit 30, so erosion occurs on the magnetic pole surface of the magnetic field forming unit 30 on the target 15. It is also formed in the outer region. Therefore, in order to move the magnetic field forming unit 30 so that the erosion forming position does not deviate from the target 15, the moving range of the magnetic field forming unit 30 must be inside the outer edge of the target 15. Therefore, a space is generated in the lower part of the outer edge of the target 15 of the cathode housing. By providing the cooling water channel 8c of the cooling water 8 in this space, the cooling of the target 15 and the close arrangement of the magnetic field forming unit 30 to the target 15 can be achieved. It is possible to separate the magnetic field forming unit 30 and the cooling unit while achieving compatibility. As a result, the magnetic field forming unit 30 and its drive system can be installed separately from the cooling water 8, and in the magnetron sputtering apparatus of the third embodiment according to the present invention, in addition to the cost reduction accompanying the reduction in the number of permanent magnets. Further, waterproofing measures for the cooling unit and the structure can be greatly simplified, operation reliability of the magnetic field forming unit 30 and its drive system can be improved, and maintenance work for the magnetic field forming unit 30 and its drive system can be reduced.

  Next, the magnetron sputtering apparatus of the 4th form which concerns on this invention is shown in FIG. In addition, the magnetron sputtering apparatus of the 4th form which concerns on this invention enables the movement direction of the magnetic field formation part 30 to move to the direction perpendicular | vertical to the target 15 surface in addition to the direction parallel to the target 15 surface. FIG. 4 shows an example in which the above configuration is applied to the magnetron sputtering apparatus of the third embodiment, but this configuration can also be applied to the magnetron sputtering apparatus of the second embodiment.

  The drive device 36a of the magnetron sputtering apparatus of the fourth embodiment has a mechanism capable of rotating the connected rotating shaft 34 and moving the rotating shaft 34 in the axial direction, that is, in the vertical direction perpendicular to the surface of the target 15. is doing. Then, the driving device 36a rotates the rotating shaft 34 so as to move the magnetic field forming unit 30 parallel to the surface of the target 15 during film formation, thereby improving the utilization efficiency of the target 15.

  Further, when the thickness of the erosion formation position of the target 15 is shaved and thinned due to long-term use, the driving device 36a lowers the rotating shaft 34 by the shaved amount from the surface of the target 15 to the magnetic field forming unit 30. The distance is kept substantially constant. Thereby, according to the magnetron sputtering apparatus of the 4th form which concerns on this invention, the fluctuation | variation of the film-forming rate accompanying the thickness change of the target 15 is suppressed by adjusting the position of the magnetic field formation part 30 to an up-down direction. Is possible.

  When the target 15 is made of a magnetic material, the target 15 is in close contact with the cathode electrode 16 due to the magnetic force of the magnetic field forming unit 30, and it becomes difficult to remove the target 15 when the target 15 is replaced. In such a case, the driving device 36a greatly lowers the rotating shaft 34 to increase the distance between the magnetic field forming unit 30 and the target 15 and reduce the adhesion strength of the target 15 by the magnetic force of the magnetic field forming unit 30, thereby reducing the target 15. Can be easily removed.

  Next, a film forming method using the magnetron sputtering apparatus according to the present invention will be described with reference to FIG. 5 as an example of forming a conductive layer of an optical recording medium stamper using the magnetron sputtering apparatus of the fourth embodiment.

  The conductive layer of the optical recording medium stamper is formed by first forming a glass having a predetermined concavo-convex pattern spirally or concentrically formed on the anode electrode 14 in the vacuum chamber 10 on one side as a work by photolithography or the like. The substrate 13a is placed so that the concavo-convex pattern of the glass substrate 13a faces the cathode electrode 16 side. The cathode electrode 16 is provided with a target 15 made of Ni (nickel), which is a magnetic material having a thickness of about 4 mm.

  Next, after operating the vacuum pump connected to the exhaust port 11 to exhaust the air in the vacuum chamber 10, a predetermined flow rate of inert gas is introduced from the gas introduction path 12 to bring it into a low pressure state. Next, plasma is generated between the cathode electrode 16 and the anode electrode 14 by supplying predetermined power from the power source 19 to the cathode electrode 16. The generated plasma is confined and converged by the magnetic field formed by the magnetic field forming unit 30 on the target 15 to generate erosion. Mainly, positive ions in the erosion are attracted toward the cathode electrode 16 and collide with the target 15 to scatter Ni atoms. The Ni film is formed as a conductive layer by adhering and depositing the Ni atoms along the concavo-convex pattern of the glass substrate 13a held on the anode electrode 14 side.

  At this time, since the magnetic field forming unit 30 is rotated under the target 15 by the driving device 36a, the erosion forming position is moved accordingly. Therefore, the sputter positions on the surface of the target 15 are dispersed, and the utilization efficiency of the target 15 is improved.

  Further, the heat generated in the target 15 by sputtering is effectively cooled by the cooling water 8 flowing through the cooling water channel 8c provided in the cathode housing 16b, and the film formation efficiency is not reduced by the heat generation of the target 15.

  When the Ni film having a predetermined thickness is formed on the concave / convex pattern of the glass substrate 13a by the above procedure, the power supply from the power source 19 is stopped and the vacuum chamber 10 is set to normal pressure. Take out. The extracted glass substrate 13a is formed by using a Ni film on the concave / convex pattern as a conductive layer, forming a thick Ni layer on the conductive layer by electroforming or the like, and then peeling the Ni layer and the conductive layer from the glass substrate 13a. . The peeled Ni layer is subjected to backside polishing and inner / outer diameter processing, and then attached to a mold and used as an optical recording medium stamper for manufacturing an optical recording medium substrate.

  When the thickness of the erosion forming position of the target 15 is thinned by sputtering, the rotation shaft 34 is moved downward by that amount by the driving device 36a, so that the formation caused by the change in the thickness of the target 15 occurs. The fluctuation of the film rate can be suppressed. When the target 15 is replaced, if the target 15 is made of a magnetic material as in this example, the driving device 36a greatly lowers the rotating shaft 34. Thereby, the target 15 can be easily detached from the cathode electrode 16.

  In the case where a magnetic material is used for the target 15, the magnetic lines of force from the magnetic field forming part easily pass through the target 15, and the magnetic field hardly leaks onto the surface of the target 15. For this reason, it is necessary to use an expensive rare earth magnet or the like having a strong magnetic force for the magnetic field forming portion. Since the magnetic field forming unit 30 of the present invention uses only one permanent magnet as described above, the material cost does not increase significantly even if an expensive rare earth magnet or the like is used. When a magnetic material is used for the target 15, it is preferable to optimize the thickness of the target 15 according to the magnetic field forming unit 30.

  From the above, according to the magnetron sputtering apparatus according to the present invention, since the magnetic field forming unit 30 is constituted by one magnet, the structure is simplified, and at the same time, the number of magnets can be reduced and the cost can be reduced. it can. Moreover, since the magnetic field formation part 30 does not have a complicated structure, even if it installs in the cooling water 8, it does not disturb the flow of the cooling water 8 and does not impair the cooling capacity of the cooling part.

  Furthermore, since the magnetic field from the magnetic field forming unit 30 is also formed outside the magnetic field forming unit 30, the moving range of the magnetic field forming unit 30 is smaller than the diameter of the target 15. Therefore, it is possible to separate the magnetic field forming unit 30 and the cooling unit by installing the cooling unit in the space below the outer edge portion of the target 15, greatly simplifying the waterproofing measures and structure of the cooling unit, and forming the magnetic field The operation reliability of the unit 30 and its drive system can be improved, and the maintenance work of the magnetic field forming unit 30 and its drive system can be reduced.

It is a schematic block diagram of the 1st form of the magnetron sputtering apparatus which concerns on this invention. It is a schematic block diagram of the 2nd form of the magnetron sputtering device which concerns on this invention. It is a schematic block diagram of the 3rd form of the magnetron sputtering device which concerns on this invention. It is a schematic block diagram of the 4th form of the magnetron sputtering device which concerns on this invention. It is a figure explaining the film-forming by the magnetron sputtering apparatus which concerns on this invention. It is a schematic block diagram of the conventional magnetron sputtering apparatus. It is a schematic block diagram of the magnetic field formation part of the conventional magnetron sputtering apparatus.

Explanation of symbols

8c Cooling water channel
15 Target
16 Cathode electrode
16a, 16b cathode housing
30 Magnetic field generator
32 Base plate
34 Rotating shaft
36, 36a Drive device

Claims (5)

In magnetron sputtering equipment,
A vacuum chamber;
A cathode electrode provided in the vacuum chamber and having a flat holding surface for holding a target made of a predetermined material;
An anode electrode disposed opposite to the holding surface with a predetermined gap;
A magnetic field forming portion that is provided on the opposite side of the cathode electrode from the anode electrode and forms a predetermined magnetic field;
Have
The magnetic field forming unit includes a magnet having a magnetic axis along a direction substantially orthogonal to the holding surface, and magnetic lines of force generated from one magnetic pole of the magnet when the target is held by the holding surface. The magnetron sputtering apparatus is arranged so as to pass through the target and converge to the other magnetic pole of the magnet. Moving means for moving the magnetic field forming portion along the holding surface while maintaining the direction of the magnetic axis;
The magnetron sputtering apparatus according to claim 1, further comprising a magnetron sputtering apparatus. 3. The magnetron sputtering apparatus according to claim 1, wherein a cooling water channel through which cooling water flows is provided on the opposite side of the cathode electrode from the anode electrode so as to surround the magnetic field forming unit. Moving means for moving the magnetic field forming portion along a direction of separating from and contacting the holding surface;
The magnetron sputtering apparatus according to any one of claims 1 to 3, further comprising a magnetron sputtering apparatus. A film forming method using the magnetron sputtering apparatus according to any one of claims 1 to 4,
The anode electrode has a work holding part for holding a work on the cathode electrode side,
A film forming method using a magnetron sputtering apparatus that forms the predetermined material on the surface of the work from the target in a state where the work is held by the work holding unit.

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