JP4973752B2 - Electronic device package manufacturing method and electronic device manufacturing method - Google Patents

Description

The present invention relates to a method for manufacturing an electrode for probe contact of an electronic device that can eliminate the inconvenience in the work of measuring characteristics of various electronic devices using the probe apparatus and the data input work of IC components using the probe apparatus .

In the mobile communications market, an increasing number of manufacturers are promoting modularization of parts groups for each function, taking into account the mounting properties, maintenance and handling characteristics of various electrical components, and the commonality of parts between devices. . Further, along with modularization, there is a strong demand for downsizing and cost reduction.
In particular, there is an increasing tendency toward modularization of circuit components that have established functions and hardware configurations, such as a reference oscillation circuit, a PLL circuit, and a synthesizer circuit, and that require high stability and high performance. Furthermore, there is an advantage that a shield structure can be easily established by packaging these parts as a module.

Examples of surface mounting electronic components constructed by modularizing and packaging a plurality of related components include piezoelectric vibrators, piezoelectric oscillators, SAW devices, etc., but these functions are maintained at a high level. However, in order to achieve further miniaturization, for example, a two-story structure module as shown in FIG. 6 is employed.
6A is a plan view showing a conventional configuration of a surface-mount type piezoelectric device (quartz oscillator) as a two-story structure type (H type) module, and FIG. 6B is a schematic longitudinal sectional view. ) Is a bottom view thereof. This crystal oscillator A is made of crystal vibration by means of a conductive adhesive 104a on an element mounting pad 104 provided in a space (upper surface side recess) 101a formed by a ceramic container (package) 101 and a metal lid 102. A crystal resonator 100 to which an element (piezoelectric element) 103 is connected, a crystal resonator element 103 in which excitation electrodes 103b are formed on both front and back surfaces of the crystal substrate 103a, and a container (package) 105 bonded to the bottom surface of the crystal resonator 100. A bottom structure (IC component unit) 107 in which an IC component 106 constituting an oscillation circuit, a temperature compensation circuit, etc. is bare-chip mounted on an IC component mounting electrode 105c provided on a ceiling surface in a void (lower side recess) 105a. It is equipped with. When this crystal oscillator A is mounted on a printed circuit board, soldering is performed using mounting terminals 105b provided on the bottom surface of the container 105 (for example, Patent Document 1).

In this crystal oscillator A, two monitor electrodes (probe contact electrodes) 110 for adjusting the frequency (frequency measurement) of the crystal resonator element while checking the characteristics of the crystal resonator element 103 are shown in FIG. ) As shown in (c), it is arranged at a position near one edge in the longitudinal direction of the ceiling surface of the void 105a and is concealed by the IC component when the IC component is mounted (Patent Documents 1 and 2). In the adjustment work, before mounting the IC component, the two probe pins (contact members) 120 are brought into contact with the monitor electrode 110 and energized to confirm the frequency output by exciting the crystal resonator element. When there is an error between the frequency and the actual frequency, adjustment is made by a technique such as increasing or decreasing the thickness of the excitation electrode film on the crystal resonator element.

The procedure for assembling this crystal oscillator A is as follows. First, after the crystal resonator element 103 is mounted in the container body 101, the two monitor electrodes 11 in the space 105a of the container 105 are placed.
The adjustment of the crystal resonator element is performed while checking the characteristics of the crystal resonator element 103 by bringing the probe pin 120 into contact with zero. After the adjustment is completed, the upper surface side recess 101 a is sealed with the metal lid 102. Next, the IC component mounting electrode 105 in the void 105a
IC component 106 is flip-chip mounted on c.

By the way, when each terminal of the IC component 106 is flip-chip connected to each IC component mounting electrode 105c using the conductor bump, ultrasonic vibration energy applied to the conductor bump is transmitted to the IC component mounting electrode 105c without being lost. Therefore, the IC component mounting electrode 105c needs to be compressed and hardened in advance so that the connection can be made satisfactorily.
5c and the monitor electrode 110 are formed of the same material at the same time.
Is also hard. That is, when the IC component mounting electrode 105c and the monitor electrode 110 are formed on the ceiling surface of the void 105a made of ceramic, paste-like tungsten is printed on the ceramic (green sheet) surface and then pressed by a pressing means. After being cured, it is fired together with the ceramic to make it hard and smooth.

On the other hand, the tip of the probe pin 120 that abuts the monitor electrode has a structure in which a relatively soft metal material such as beryllium copper is plated with gold. Not only the gold-plated layer but also the beryllium copper part wears out, the contact resistance between the probe pin tip and the monitor electrode changes, and the continuity deteriorates, making it impossible to accurately measure the characteristics of the crystal resonator element. Was. For this reason, the probe pin must be frequently replaced, which causes a reduction in production efficiency.

Such a problem is not limited to the monitor electrode in the surface mount type piezoelectric oscillator, but also in the electrode (formed on the outer surface of the package) used to input data to the IC component by contacting the probe. Has occurred. In addition, a mounting terminal formed on the bottom of the package is used to monitor the frequency of the packaged surface-mount type crystal unit. Similarly, when the probe is brought into contact with the mounting terminal, the probe is similarly used. The problem of wear and tear has arisen. Further, a similar problem occurs with the monitor electrode provided on the outer surface of the package in order to monitor the characteristics of the SAW resonator.
Further, the same problem occurs when the probe is brought into contact with the electrodes for measuring various characteristics and the electrodes for data input in the surface mount type electronic devices other than the piezoelectric device.

JP 2000-278047 A Japanese Patent No. 3406845 Japanese Patent No. 3451018 JP 2004-320420 A

As described above, in the conventional surface mount type electronic device, the electrode (probe contact electrode) used for measuring the characteristics of the elements mounted on the package or writing data to the IC component is hard. In this case, there is a problem that the metal material constituting the probe tip that is in contact with the electrode is scraped and worn out in a short period of time, resulting in deterioration of continuity. It was.
The present invention has been made in view of the above, and solves the problem that the probe loses durability in a short time due to the hardened probe contact electrode against which the probe abuts. It is an object of the present invention to provide a method for manufacturing an electrode for probe contact of an electronic device that can be used for a long period of time and can improve productivity.

In order to solve the above problems, the present invention is a method of manufacturing an electrode for probe contact of an electronic device that is formed on a package surface of the electronic device and is in contact with a probe of a probe device,
Forming a lower metal layer which is cured by pressing on the package surface with a pressing means;
Forming a non-pressurized upper metal layer on the lower metal layer. In the present invention, while the lower metal layer is pressed and cured, the upper metal layer is not pressurized, so that a softer upper metal layer can be easily formed than the lower metal layer. .

The present invention is characterized in that the upper metal layer is thinner than the lower metal layer. In the present invention, the upper metal layer of the probe contact electrode is thinly formed to suppress the height of the probe contact electrode, for example, at the mounting position of the IC component mounted on the IC component mounting electrode via a bump or the like. Even when a deviation occurs, the IC component can be prevented from contacting the probe contact electrode.

The present invention is characterized in that the upper metal layer is thicker than the lower metal layer. In the present invention, the upper metal layer of the probe contact electrode is formed thick so that the height of the probe contact electrode is higher than that of the other electrodes, so that even if the probe diameter is larger than the probe contact electrode, Can be prevented from contacting other electrodes or the like. Further, since the upper metal layer made of a soft conductive material is formed thick, wear on the probe side can be suppressed, and the probe can be used for a long time.

Further, the present invention is characterized in that the upper metal layer and the lower metal layer are solidified by firing together with the package. According to the present invention, since the metal layer can be formed together with the firing of the package, it is easy to form the metal layer.
In the present invention, the material of the metal layer is tungsten or molybdenum. According to the present invention, by using tungsten or molybdenum as the material of the metal layer,
It becomes possible to form a metal layer with firing of the ceramic package.

(A) (b) and (c) are principal part top views which show the structure of the surface mount-type crystal oscillator (piezoelectric oscillator) as an example of the electronic device provided with the electrode for probe contact which concerns on one Embodiment of this invention, It is a longitudinal cross-sectional view and a bottom view. 6 is a view showing a state in which a small diameter probe having a tip surface area narrower than the surface area of the monitor electrode is in contact with the surface of the monitor electrode 110. FIG. It is the figure which showed the state which contacted the surface of the monitor electrode with the large diameter probe whose area of a front-end | tip part is larger than the monitor electrode area. It is a longitudinal cross-sectional view which shows the structure of the electrode for probe contact which concerns on other embodiment of this invention. (A) (b) And (c) is sectional drawing which shows a part of assembly procedure of the crystal oscillator as an electronic device provided with the electrode for probe contacts of this invention. (A) is a top view which shows the conventional structure of the surface mount type piezoelectric device (crystal oscillator) as a two-story structure type (H type) module, (b) is a longitudinal cross-sectional schematic diagram, (c) is the bottom view.

Hereinafter, the present invention will be described in detail based on embodiments shown in the drawings.
FIGS. 1A, 1B, and 1C are plan views showing a configuration of a surface-mount type crystal oscillator (piezoelectric oscillator) as an example of an electronic device including a probe contact electrode according to an embodiment of the present invention. It is a figure, a longitudinal cross-sectional view, and a bottom view.
In addition, each component of the surface-mount type crystal oscillator as the measurement object will be described with the same reference numerals as in FIG.
The monitor electrode 110 as the probe contact electrode according to this embodiment is characterized in that at least the upper layer portion is made of a soft conductive material.
That is, the monitor electrode (probe contact electrode) 110 is a lower metal layer formed on the ceiling surface in the space (lower surface side recess) 105 a of the container (package) 105 to be joined to the bottom surface of the crystal unit 100. 1 and an upper metal layer (upper layer portion) 2 laminated on the lower metal layer 1 and made of a softer metal than the lower metal layer. The lower metal layer 1 is a metal layer cured by pressurization, and the upper metal layer 2 is a metal layer in an unpressurized state. As a specific material, for example, when the material of the package 105 is ceramic, the lower metal layer 1 is made of a hardened tungsten film or molybdenum film, and the upper metal layer 2 is a hard layer laminated on the lower metal layer. It is made of an unstructured tungsten film or molybdenum film. Further, a nickel film and a gold film are sequentially laminated on the upper metal layer surface and the exposed surface of the lower metal layer.

For example, when the material of the package 105 is a low temperature ceramic, the material of the lower metal layer 1 and the upper metal layer 2 is platinum, silver palladium alloy,
Copper may be used. Furthermore, when the lower metal layer 1 and the upper metal layer 2 are formed on a printed circuit board such as a glass epoxy resin, the material of the metal layer may be copper. Also in these cases, a nickel film and a gold film are sequentially laminated on the upper metal layer surface and the exposed surface of the lower metal layer.
Further, the material of the lower metal layer 1 and the material of the upper metal layer 2 may be different. Further, the upper layer portion need not be a metal and may be a soft material having conductivity.

In batch processing, the containers (packages) 101 and 105 are manufactured by laminating a plurality of ceramic sheets (green sheets) having a large area and then solidifying them by firing. During firing, the container and each metal part are formed by firing in a state where a paste-like metal film such as tungsten forming the wiring pattern and each metal layer 1 and 2 is disposed at a predetermined position between the ceramic sheets or on the ceramic sheet surface. Can be solidified simultaneously.

The lower metal layer 1 is a pressure metal layer obtained by pressurizing and hardening a paste-like tungsten film (paste-like metal layer) printed on the ceiling surface of the container 105 by a press means (press machine). As described above, the lower metal layer 1 is formed at the same time as the IC component mounting electrode (lower surface side internal pad) 105c disposed in another part of the ceiling surface of the space 105a.
The upper metal layer 2 is a paste-like tungsten film (non-pressurized metal layer) formed on the lower metal layer 1. The difference from the lower metal layer 1 is that no pressure is applied.

The metal layers 1 and 2 are solidified by firing together with the containers (packages) 101 and 105. After the metal films formed between the laminated ceramic sheets and on the ceramic sheet surface are solidified by firing, the hardness of the lower metal layer 1 that is a pressurized metal layer is the upper metal that is a non-pressurized metal layer. It is higher than layer 2. That is, the upper metal layer 2 is softer than the lower metal layer 1, and the upper metal layer 2 is made softer than the material constituting the tip of the probe that comes into contact. Examples of the material of the probe include those obtained by rhodium plating treatment on beryllium copper, those obtained by rhodium plating treatment on hard adjacent bronze, those obtained by rhodium plating treatment on SK-4, and those obtained by gold plating on a copper alloy.
Further, the surface area of the upper metal layer 2 is set to be equal to or slightly narrower than the surface area of the lower metal layer 1. However, when the area of the tip of the upper metal layer 2 is made smaller than the area of the lower metal layer 1,
If the surface area of the lower metal layer that protrudes from the peripheral edge (outer contour) of the upper metal layer is excessive, the tip of the probe that contacts the upper metal layer will accidentally contact the hard lower metal layer surface. Therefore, the dimensional relationship and the positional relationship between the two metal layers are set appropriately.
As described above, the upper metal layer 2 may be formed of a conductive resin or a paste-like metal.

FIG. 2 shows a state in which a small-diameter probe (probe pin) 120 having a tip surface area narrower than the surface area of the monitor electrode is in contact with the surface of the monitor electrode 110. The tip of the small-diameter probe 120 is not in contact with the hard lower metal layer 1, but is in contact with only the surface of the upper metal layer 2 that is softer than the probe tip, and the upper metal layer 2 is added at that time. Since it is deformed by pressure, it conducts in a state where the adhesion between the two is increased, and it is possible to suppress damage and wear of the probe. Therefore, since the upper metal layer 2 functions as a cushioning material in this way, the durability of the probe can be relatively increased, and it can be used over a long period of time.

Next, FIG. 3 shows a state where a large-diameter probe 120 having a tip portion area larger than the monitor electrode area is in contact with the surface of the monitor electrode. This is a case where the probe diameter is relatively increased as compared with the monitor electrode area as a result of the limit in reducing the diameter of the probe even though the monitor electrode 110 is reduced in area due to the miniaturization of the crystal oscillator. Assumed. In this case, even if a part of the tip of the probe 120 abuts in a state of protruding from the peripheral portion of the monitor electrode surface, the probe tip always comes into contact only with the upper metal layer 2. Therefore, the upper metal layer 2 exerts a buffering action while being deformed by the pressurization from the probe 120, and high conductivity can be secured by being in close contact with the upper metal layer 2. Therefore, the durability of the probe can be relatively improved while accurately measuring the frequency characteristics of the crystal resonator element.

In order to confirm that the measurement by bringing the probe into contact with the monitor electrode has been correctly completed, it is effective to visually check the deformation state of the upper metal layer 2, and the deformation state of the upper metal layer 2 is effective. If it is insufficient or the change state is biased, the measurement may not be performed correctly. Therefore, it is possible to determine whether the measurement is valid or invalid from the deformation state of the upper metal layer 2.

FIG. 4 is a longitudinal sectional view showing a configuration of a piezoelectric oscillator according to another embodiment of the present invention. In addition,
The same parts as those in FIG.
In the piezoelectric oscillator shown in FIG. 4, a monitor electrode 110 which is a probe contact electrode.
The upper electrode layer 2 that is the upper layer portion is made thinner than the lower electrode layer 1 that is the lower layer portion. Specifically, when the thickness of the lower metal layer 1 is about 10 to 25 μm,
The thickness of the upper metal layer 2 was about 10 ± 5 μm. With this configuration, the monitor electrode 1
10 (the height obtained by adding the thickness of the lower electrode layer 1 and the thickness of the upper electrode layer 2) is the height position of the IC component 106 mounted on the IC component mounting electrode 105c via a bump or the like. Can be lower. Accordingly, even when the IC component 106 is mounted on the IC component mounting electrode 105c via a bump or the like, even if the mounting position of the IC component 106 is displaced, the metal IC component 106 is prevented from contacting the monitor electrode 110. can do.

In the piezoelectric oscillator shown in FIG. 4, the upper electrode layer 2 of the monitor electrode 110 is thinner than the lower electrode layer 1, but conversely, the upper electrode layer 2 is thicker than the lower electrode layer 1. You may do it. That is, the height of the monitor electrode 110 may be formed higher than the IC component mounting electrode 105c. With this configuration, even when the diameter of the probe is larger than the monitor electrode 110, the probe can be prevented from coming into contact with the IC component mounting electrode 105c. Also,
When the upper electrode layer 2 made of a soft conductive material is formed thick, wear of the probe can be further suppressed, so that the probe can be used for a longer period of time.
In the present embodiment described so far, the upper electrode layer 2 of the monitor electrode 110 has been described as being softer than the lower electrode layer 1, but the upper electrode layer 2 of the monitor electrode 110 is softer than the probe. It is preferable to use the material. With such a configuration, the probe can be used for a longer period.

FIG. 5 is a cross-sectional view showing a part of the assembling procedure (procedure after frequency measurement) of a crystal oscillator as an example of an electronic device provided with a monitor electrode (probe contact electrode) according to an embodiment of the present invention.
The probe 120 connected to a probe device (measuring device body) (not shown) in FIG.
Measurement is performed by bringing the tip of the electrode into contact with the upper metal layer 2 constituting the upper layer portion of the monitor electrode 110. At this time, the upper metal layer 2 made of a metal softer than the probe tip is pressed to be in close contact with the probe tip while being deformed into a concave shape to ensure high conduction. Therefore, highly accurate measurement can be performed. Moreover, wear at the probe tip is greatly reduced.
(B) After the measurement is completed and the probe is retracted, the upper recess 101a is moved to the metal lid 1
02 and the IC component mounting electrode 105 provided on the ceiling surface of the lower recess 105a.
The state where the IC component 106 is flip-chip connected to c is shown.
(C) shows a completed state in which underfill (resin) 5 is filled in the lower recess 105a after the IC component is mounted.

In each of the above embodiments, the case where the probe contact electrode of the present invention is used as a monitor electrode of a crystal oscillator has been described. However, the IC component 1 mounted on the IC component mounting electrode 105c is described.
When a data input electrode (probe contact electrode) for inputting or rewriting data to 06 is provided at an appropriate position (for example, a side surface) of the container, the data input electrode Applying the probe contact electrode structure of the present invention to improve the durability of the probe,
Measurement accuracy can be improved by ensuring conductivity.

The monitor electrode and the data input electrode according to each embodiment of the present invention are applied not only to a piezoelectric oscillator such as a crystal oscillator but also to a monitor electrode provided in a piezoelectric device such as a crystal resonator or a SAW resonator. be able to. For example, in the case of a crystal resonator, a mounting terminal (terminal to be mounted on the motherboard on the device side) disposed on the bottom surface of the surface mounting package is used to measure the characteristics of the crystal resonator element (piezoelectric element). Although used as a monitor electrode (frequency measurement electrode), this mounting terminal may be composed of a hard lower metal layer and a soft upper metal layer. If it does so, degradation of the probe used in order to measure the characteristic etc. of the crystal oscillation element which is an electronic device can be suppressed, and it becomes possible to use a probe for a long period of time.

Furthermore, the probe contact electrode of the present invention is an electronic device other than a piezoelectric device, and includes an electrode used for measuring characteristics by contacting the probe and inputting data to an IC component or the like. Can be generally applied. If it does so, degradation of the probe used in order to measure the characteristic of electronic devices other than a piezoelectric device, or to input data into IC parts etc. can be controlled, and it becomes possible to use a probe for a long period of time.

DESCRIPTION OF SYMBOLS 1 ... Lower metal layer, 2 ... Upper metal layer, 100 ... Crystal oscillator, 101 ... Container main body (package), 101a ... Upper surface side recess, 102 ... Metal lid, 103 ... Quartz vibration element, 103a ...
Quartz substrate, 103b ... excitation electrode, 104 ... element mounting pad, 104a ... conductive adhesive,
105 ... Container (package), 105a ... Empty space, 105b ... Mounting terminal, 105c ... IC component mounting electrode, 106 ... IC component, 110 ... Monitor electrode (probe contact electrode), 120
…probe

Claims (8)

A method of manufacturing a package of an electronic device having a probe contact electrode on a surface with which a probe is abutted , comprising:
Forming a lower metal layer by pressurizing and curing the metal layer disposed on the package surface by a pressing means;
Forming a top-side metal layer on the lower metal layer,
Without applying pressure to the upper metal layer, the manufacture of the electronic device package which comprises a step of forming the probe contacting electrode by sintering and the upper metal layer and the lower metal layer Method. The method for manufacturing an electronic device package according to claim 1, wherein the upper metal layer is thinner than the lower metal layer. 2. The method for manufacturing an electronic device package according to claim 1, wherein the upper metal layer is thicker than the lower metal layer. 4. The method of manufacturing an electronic device package according to claim 1, wherein the upper metal layer and the lower metal layer are baked and solidified together with the package . 5. 5. The method of manufacturing an electronic device package according to claim 1, wherein a material of the upper metal layer and the lower metal layer is tungsten or molybdenum. 6.   Preparing a package manufactured by the method of manufacturing an electronic device package according to any one of claims 1 to 5,
  Mounting an electronic component in the package;
And a step of measuring a characteristic of the electronic component by bringing a probe into contact with the probe contact electrode.   Preparing a package manufactured by the method of manufacturing an electronic device package according to any one of claims 1 to 5,
  Mounting an IC component in the package;
And a step of inputting data to the IC component by bringing a probe into contact with the probe contact electrode. The method of manufacturing an electronic device according to claim 6, wherein the electronic device is a piezoelectric oscillator.

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