JP4982664B2 - Electronic device apparatus and manufacturing method thereof - Google Patents

Description

  The present invention relates to an electronic device device, and more particularly to an electronic device device in which a chip is not destroyed by solder and a method for manufacturing the same.

  As shown in FIG. 1, the conventional light emitting diode device 100 includes a first lead frame 110, a second lead frame 120, a chip 130, and a package 140. The first lead frame 110 includes a solder region 111 and a wire bonding region 112. The second lead frame 120 includes a solder region 121, a wire bonding region 122, and a die bonding region 123.

  The chip 130 is mounted on the die bonding region 123 of the second lead frame 120, and the wire bonding region 112 of the first lead frame 110 and the second lead frame 120 are formed by a wire bonding method (that is, two conductive wires 150). The wire bonding regions 122 are electrically connected to each other.

  The chip 130, the wire bonding region 112 of the first lead frame 110, and the wire bonding region 122 of the second lead frame 120 are covered with a package 140 formed by a molding method.

  However, the conventional light-emitting diode device 100 is manufactured as a small electronic component using high-tech manufacturing process technology. When mounting (mounting) the solder 170 in a molten state, the solder 170 may enter from the slit 160 between the package 140 and the lead frames 110 and 120, and the solder 170 may damage the chip 130 or the conductive wire 150. The occurrence of mounting defects due to this is a problem.

  An object of the present invention is to provide an electronic device apparatus and a method for manufacturing the same that can prevent a solder material from entering inside and causing damage at the time of mounting, thereby reducing a defect rate.

  An electronic device device of the present invention includes a first lead frame having a solder region and a wire bonding region, and a first separation portion formed between the solder region and the wire bonding region, a solder region, and a wire. A second lead frame having a bonding region and a die bonding region, wherein a second separation portion is formed between the solder region and the wire bonding region; and the die bonding region of the second lead frame And a chip electrically connected to each of the wire bonding regions of the first lead frame and the second lead frame.

  The first separation portion is a recess formed by etching the first lead frame by a laser processing method, and the second separation portion is etched by the laser processing method. The oxidizable layer is exposed on the bottom surface of each recess.

  The semiconductor device further includes a package that covers the chip and the wire bonding regions.

  In addition, the first lead frame further includes a first antioxidant layer and a second antioxidant layer, and the oxidizable layer is interposed between the first antioxidant layer and the second antioxidant layer. The first antioxidant layer is a metal plating layer, the second antioxidant layer is a nickel plating layer, and the oxidizable layer is a copper plating layer.

  Further, the second lead frame further includes a first antioxidant layer and a second antioxidant layer, and the oxidizable layer is interposed between the first antioxidant layer and the second antioxidant layer. The first antioxidant layer is a metal plating layer, the second antioxidant layer is a nickel plating layer, and the oxidizable layer is a copper plating layer.

  In the method for manufacturing an electronic device device of the present invention, a step A for preparing a first lead frame and a second lead frame, a chip is mounted on a die bonding region of the second lead frame, Step B for electrically connecting to each wire bonding region of the first lead frame and the second lead frame, Step C for covering the chip and each wire bonding region with a package by a molding method, and the first Forming a separation portion at a location adjacent to the package of each of the lead frame and the second lead frame.

  In addition, each of the antioxidant layer formed on the surface of the first lead frame and the antioxidant layer formed on the surface of the second lead frame is etched by a laser processing method to form the separation portion, An oxidizable layer made of a copper plating layer formed under the antioxidant layer is exposed on a lower surface of the separation part.

  In the electronic device device of the present invention, the separation portion is formed at a location adjacent to the package of the lead frame and has a two solder mask structure. The penetration of the solder material can be stopped at the separation recess, and the solder can be prevented from entering the chip and the wire bonding in the package. Thereby, the defective rate at the time of mounting can be reduced.

  As shown in FIGS. 2 and 3, the electronic device apparatus according to the embodiment of the present invention includes a first lead frame 200, a second lead frame 300, a chip 400, and a package 500.

  As shown in FIG. 4, the first lead frame 200 includes a first antioxidant layer 210, a second antioxidant layer 220, a first antioxidant layer 210, and a second antioxidant layer 220. And an oxidizable layer 230 disposed therebetween. The first lead frame 200 has a solder region 240 and a wire bonding region 250, and a first separation part 260 is formed between the solder region 240 and the wire bonding region 250 so as to separate them. Yes. The first separation portion 260 is a recess formed by etching using a laser processing method, and the oxidizable layer 230 is exposed on the bottom surface of the recess.

  In the present embodiment, the first antioxidant layer 210 is a metal plating layer, the second antioxidant layer 220 is a nickel plating layer, and the oxidizable layer 230 is a copper plating layer.

  As shown in FIG. 4, the second lead frame 300 similarly includes a first antioxidant layer 310, a second antioxidant layer 320, a first antioxidant layer 310, and a second antioxidant layer. 320 and an oxidizable layer 330 disposed between the two layers. In addition, the second lead frame 300 has a solder region 340, a wire bonding region 350, and a die bonding region 360, and a second separation is provided between the solder region 340 and the wire bonding region 350 so as to separate them. A portion 370 is formed. The second separation portion 370 is a recess formed by etching using a laser processing method, and the oxidizable layer 330 is exposed on the bottom surface of the recess.

  In the present embodiment, the first antioxidant layer 310 is a metal plating layer, the second antioxidant layer 320 is a nickel plating layer, and the oxidizable layer 330 is a copper plating layer.

  The chip 400 is mounted on the die bonding region 360 of the second lead frame 300, and the wire bonding region 250 and the second lead frame 300 of the first lead frame 200 are attached by a wire bonding method (that is, two conductive wires 600). The wire bonding regions 350 are electrically connected to each other.

  The package 500 is formed by a molding method, and covers the chip 400, the wire bonding region 250 of the first lead frame 200, and the wire bonding region 350 of the second lead frame 300.

  The electronic device apparatus described above is mounted on a circuit board (not shown) by SMT (surface mounting technology). Separating portions 260 and 370 (that is, recesses) are formed at locations adjacent to the package 500 of the first lead frame 200 and the second lead frame 300, respectively. Therefore, in the soldering process of the lead frames 200 and 300, As shown in FIG. 5, the molten solder 700 is blocked by the separating portions 260 and 370, and is prevented from entering the wire bonding regions 250 and 350 in the package 500 without overflowing from the separating portions 260 and 370. The The bottom side of the grooves of the separation portions 260 and 370 is a copper plating layer (oxidizable layer), and since the exposed copper plating layer is oxidized by contacting with air, the prevention effect is high. Thereby, damage of the electronic device apparatus by solder is prevented.

  FIG. 6 is a flowchart showing the manufacturing process of the electronic device device of the present invention. This manufacturing process includes the following processes (A) to (D).

  Step (A): In step 901, the first lead frame 200 and the second lead frame 300 are prepared. At this stage, the separating portions 260 and 370 are not formed.

  Step (B): In step 902, the chip 400 is mounted on the die bonding area 360 of the second lead frame 300, and the chip 400 is attached to the wire bonding areas 250, 250 of the first lead frame 200 and the second lead frame 300. Each is electrically connected to 350. In this embodiment, the chip 400 is connected to the wire bonding regions 250 and 350 by a wire bonding method.

  Step (C): In step 903, the chip 400 and the wire bonding regions 250 and 350 are covered with the package 500 by a molding method.

  Step (D): In step 904, separation portions 260 and 370 are formed at locations adjacent to the respective packages 500 of the first lead frame 200 and the second lead frame 300, respectively. In this embodiment, the separation parts 260 and 370 are formed by a laser processing method.

  As can be seen from the above, in the manufacturing method of the present invention, the recess-shaped separation portions 260 and 270 are formed at locations adjacent to the package 500 of the lead frames 200 and 300 by the laser processing method, respectively, and two solder masks are formed. Forming a structure. Thus, when soldering the electronic device apparatus, molten solder is prevented from entering the chip 400 and the wire bonding regions 250 and 350 in the package 500, and the defect rate is reduced.

  In the present invention, preferred embodiments have been disclosed as described above, but these are not intended to limit the present invention in any way, and anyone who is familiar with the technology can make various modifications within the scope and spirit of the present invention. Changes and modifications can be made.

It is sectional drawing which shows the conventional light emitting diode apparatus. It is a perspective view which shows the electronic device apparatus by one Embodiment of this invention. It is sectional drawing which shows the electronic device apparatus by one Embodiment of this invention. FIG. 3 is a partially enlarged cross-sectional view showing a first lead frame or a second lead frame. FIG. 4 is a partially enlarged cross-sectional view showing a state where a solder material is added to FIG. 3. 3 is a flowchart showing a manufacturing process of an electronic device device according to an embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 100 Light emitting diode apparatus 110 1st lead frame 111 Solder area | region 112 Wire bonding area | region 120 2nd lead frame 121 Solder area | region 122 Wire bonding area | region 123 Die bonding area | region 130 Chip 140 Package 150 Conductor 160 Slit 170 Solder 200 1st lead frame 210 First Antioxidant Layer 220 Second Antioxidant Layer 230 Oxidizable Layer 240 Solder Region 250 Wire Bonding Region 260 First Separation Section 300 Second Lead Frame 310 First Antioxidant Layer 320 Second Antioxidant Layer 330 Oxidizable layer 340 Solder region 350 Wire bonding region 360 Die bonding region 370 Second separation portion 400 Chip 500 Package 600 Lead wire 700 Solder

Claims (3)

A first lead frame in which a first solder region, a first separation portion, and a first wire bonding region are disposed in this order;
A second lead frame in which a second solder region, a second separation portion, a second wire bonding region and a die bonding region are arranged in this order;
A chip mounted in the die bonding area and electrically connected to each of the first wire bonding area and the second wire bonding area;
Covering only the chip, the die bonding region, the first wire bonding region, and the second wire bonding region, the first separation portion, the second separation portion, the first solder region, and the first solder region A package that does not cover the solder area of 2;
Equipped with a,
The first separation part is an oxidizable layer formed on the first lead frame,
The second separation part is an oxidizable layer formed on the second lead frame,
Each of the first separation part and the second separation part is a recess,
The first lead frame includes a first antioxidant layer, a second antioxidant layer, and the oxidizable layer disposed between the first antioxidant layer and the second antioxidant layer. The first antioxidant layer is a metal plating layer, the second antioxidant layer is a nickel plating layer, and the oxidizable layer is a copper plating layer. Electronic device equipment. The second lead frame includes a first antioxidant layer, a second antioxidant layer, and the oxidizable layer disposed between the first antioxidant layer and the second antioxidant layer. The first antioxidant layer is a metal plating layer, the second antioxidant layer is a nickel plating layer, and the oxidizable layer is a copper plating layer. The electronic device apparatus according to claim 1 . Preparing a first lead frame and a second lead frame; and
A step of fixing a chip in a die bonding area of the second lead frame and electrically connecting the chip to the wire bonding area of the first lead frame and the second lead frame;
Covering the chip and the wire bonding area with a package by a molding method; and
Forming a separation portion at a location adjacent to the package of each of the first lead frame and the second lead frame,
Each of the first lead frame and the second lead frame includes a first antioxidant layer, a second antioxidant layer, and between the first antioxidant layer and the second antioxidant layer. And an oxidizable layer made of a copper plating layer arranged in
In the step D, the separation portion is formed by etching each of the second antioxidant layers of the first lead frame and the second lead frame by a laser processing method to expose the oxidizable layer. A method for manufacturing an electronic device device, comprising:

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