JP4983181B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for manufacturing a semiconductor device having flip chip mounting.

  As electronic devices become smaller and thinner, there is an increasing demand for high-density mounting of electronic components. In particular, in the mounting of a semiconductor substrate related to an electronic component or the like, the semiconductor substrate is directly mounted on a circuit board via bump electrodes arranged in an array on the surface instead of a bonding method by wire bonding, and the semiconductor substrate Flip chip mounting is used in which bonding is performed with a sealing resin injected between the circuit board and the circuit board.

  In recent years, in this flip chip mounting, as the density of a semiconductor substrate is increased, the interval between a plurality of arranged bump electrodes has been reduced. For this reason, voids and bubbles are generated in the sealing resin injected after mounting, and therefore, when thermal stress is applied, pressure fluctuation occurs and the electrode joint is destroyed. As a result, there arises a problem that the bondability between the semiconductor substrate and the circuit board is lowered. As described above, since the interval between the bump electrodes is reduced, it is difficult to densely fill the sealing resin between the semiconductor substrate and the circuit substrate.

  In order to overcome these problems, a method has been proposed in which a sealing resin layer is formed in advance on the semiconductor substrate side or the circuit substrate side, and the bump electrodes of the semiconductor substrate and the circuit substrate are bonded together. For example, a method of collectively performing contact bonding of conductive particles and sealing resin sealing using an adhesive sheet containing conductive particles, or bump electrodes formed on a semiconductor substrate and a circuit substrate, There is a method of mounting by forming a sealing resin sheet mainly composed of an epoxy resin. However, in such a method, particularly when the above-mentioned epoxy resin is used, when the mounting is performed, the sealing resin is sandwiched between the bump electrodes facing each other, which tends to cause poor conduction. For this purpose, it has been attempted to perform flip chip mounting by exposing the electrode from the sealing resin by cutting or polishing to ensure contact between the bump electrode and the circuit board (for example, see Patent Document 1). ).

On the other hand, in order to further shorten the process time and to enable mounting on both sides of the circuit board, a process that can perform flip chip mounting on a plurality of semiconductor elements at the same time has been devised. Has been. For example, the semiconductor element and the circuit board are temporarily temporarily fixed by the adhesive force of the sealing resin, and then the sealing resin is cured and melted and bonded together by pressing the temporarily fixed semiconductor element and the circuit board. (For example, refer to Patent Document 2). In this case as well, in order to ensure electrical continuity between the bump electrode and the circuit board, the electrode is exposed from the sealing resin by cutting or polishing in the same manner as in Patent Document 1, so that the bump electrode and the circuit board are securely connected. Attempts have been made to perform flip chip mounting in contact with a circuit board.
Japanese Patent Laid-Open No. 2005-12098 JP 2000-3922 A

  However, forming a sealing resin layer in advance on a semiconductor substrate provided with a bump electrode and planarizing the surface of the sealing resin layer and the surface of the bump electrode by cutting or polishing has the following problems. There was a point.

FIG. 12 shows a conventional example of a semiconductor substrate and a circuit board, and FIG. 13 shows a conventional example of a mounted semiconductor substrate and a circuit board.
The semiconductor substrate and the circuit board 100 are configured by a pair of a semiconductor substrate 110 on which electrodes are formed and a circuit board 120 on which electrodes are formed. The semiconductor substrate 110 on which the electrodes are formed is configured by forming a plurality of bump electrodes 102 on the semiconductor substrate 101. Similarly, the circuit board 120 on which the electrodes are formed is configured by forming a plurality of bump electrodes 112 on the circuit board 111.

  That is, when the sealing resin layer is not formed, even if the heights of the bump electrodes 102 and 112 formed on the semiconductor substrate 101 and the circuit substrate 111 vary, the semiconductor substrate 101 and the circuit substrate 111 As shown in FIG. 13, the bump electrodes 102 and 112 are deformed, so that the influence of the height variation is absorbed and no contact occurs.

FIG. 14 shows a conventional example of a flattened semiconductor substrate and a circuit board, and FIG. 15 shows a conventional example of a flattened semiconductor substrate and a circuit board.
The semiconductor substrate and the circuit substrate 200 are configured by a pair of a sealed semiconductor substrate 210 and a sealed circuit substrate 220. The sealed semiconductor substrate 210 is configured by forming a plurality of bump electrodes 202 on the semiconductor substrate 201 and forming a sealing resin 203 so as to fill the space between the bump electrodes 202. Similarly, the sealed circuit board 220 is configured by forming a plurality of bump electrodes 212 on the circuit board 211 and forming a sealing resin 213 so as to fill the space between the bump electrodes 212. ing.

  On the other hand, when the sealing resin layer is formed in this way, as shown in FIGS. 14 and 15, the sealed semiconductor substrate 210 flattened by cutting or polishing and the sealed circuit board 220 are used. When flip-chip bonding is performed, the entire surface of the sealed semiconductor substrate 210 and the sealed circuit board 220 needs to be deformed. Therefore, the parallelism of the bonding apparatus or the sealed semiconductor substrate 210 or the sealing is required. One-sided contact appears remarkably due to variations in the thickness of the circuit board 220 formed.

  Therefore, in order to easily deform the sealing resin layer, a method of joining at a temperature at which the viscosity of the sealing resin is lowered during flip chip mounting is conceivable. However, at this temperature, the sealing resin flows out onto the exposed electrode because the sealing resin is pushed out from the first bonded location. It is sandwiched between them, and conduction failure occurs. Further, when the sealing resin is pressurized in a state where it easily flows, voids are likely to occur due to the effects of uneven pressure and variations in the thickness of the circuit board. When such voids remain in the joint, there is a problem that the pressure of the void increases due to the application of thermal stress and the electrode joint is destroyed as described above.

  Also, when a flattened semiconductor substrate and a circuit board are temporarily fixed by bonding, and a plurality of temporarily fixed semiconductor substrates and circuit boards are simultaneously bonded to a pressure device such as a uniaxial metal press to pressurize them. In addition, since the semiconductor substrate and the circuit board have variations in thickness, the influence per one piece becomes more remarkable due to the influence of the variations.

  On the other hand, for example, in the case of performing fusion bonding using tin-silver (Sn-Ag) solder as the bonding of the bump electrodes, the melting point of the solder is around 220 ° C. In addition, when performing solid phase diffusion using a plating bump electrode such as gold (Au) or copper (Cu), a high temperature of 200 ° C. or higher is generally required. However, when the temperature of the sealing resin is increased to a temperature at which solid phase diffusion progresses, the curing does not start immediately but the viscosity decreases once and then the curing gradually progresses. That is, since the sealing resin has fluidity, there is another problem that it is likely to be sandwiched between the bump electrodes facing each other.

  The present invention has been made in view of these points, and an object of the present invention is to provide a method for manufacturing a highly reliable semiconductor device capable of reliably achieving the bonding between a semiconductor substrate and a circuit board. .

In the present invention, in order to solve the above-mentioned problem, as shown in the flowchart of FIG. 1, in a method of manufacturing a semiconductor device having a flip chip structure, each surface of a semiconductor substrate and a circuit substrate constituting a pair of substrates is respectively provided. A step of embedding between the formed electrodes with an insulating material (S11), and a step of temporarily fixing the semiconductor substrate by tilting the semiconductor substrate with respect to the circuit substrate at a first temperature at which the insulating material exhibits adhesiveness (S12). ), A step (S13) of evacuating the inside of the apparatus on which a plurality of temporarily fixed substrates placed, which can be evacuated with a pump, using a pump, and a plurality of temporarily fixed substrates Applying pressure evenly to the surface of the substrate to bond the pair of substrates, maintaining the pressure, and curing the bonded insulating material at a second temperature at which the insulating material is cured (S14); Each other is solid Diffused by the third temperature that expression or electrodes to each other to melt the a step (S15) of forming a metal bonding between the bonded electrodes, the method of manufacturing a semiconductor device characterized by having a are provided.

According to such a method for manufacturing a semiconductor device, an insulating material is embedded between electrodes formed on each surface of a semiconductor substrate and a circuit board constituting a pair of substrates, and the insulating material exhibits adhesiveness. At the first temperature, the semiconductor substrate is tilted with respect to the circuit board, temporarily fixed, and a plurality of temporarily fixed substrates are placed, and the inside of the apparatus capable of evacuating the inside with a pump is A pressure is applied evenly to the surfaces of a plurality of temporarily fixed substrates that are evacuated using a pump, to join the pair of substrates, to maintain the pressure, and to a second temperature at which the insulating material is cured. Thus, the bonded insulating material is cured, and a metal bond is formed between the bonded electrodes at a third temperature at which the electrodes exhibit solid phase diffusion or the electrodes melt.

  In the present invention, an insulating material is embedded between electrodes formed on each surface of a semiconductor substrate and a circuit board constituting a pair of substrates, and the semiconductor substrate is formed at a first temperature at which the insulating material exhibits adhesiveness. Tilt the substrate against the circuit board, temporarily fix it, evacuate the pair of temporarily fixed substrates, apply pressure evenly to the surfaces of the pair of temporarily fixed substrates, and join the pair of substrates Then, while maintaining the pressure, the bonded insulating material is cured at the second temperature at which the insulating material is cured, and the electrodes exhibit solid phase diffusion or at the third temperature at which the electrodes melt. A metal bond is formed between the bonded electrodes. By such a method for manufacturing a semiconductor device, the bonding reliability between flip-chip mounting electrodes of a semiconductor substrate and a circuit substrate is improved.

Hereinafter, the outline of the present invention will be described in detail with reference to the drawings.
First, an outline of the present invention will be described, and then an embodiment of the present invention will be described.

FIG. 1 is a flowchart showing the outline of the present invention.
In the present invention, flip-chip mounting is realized on the semiconductor substrate and the circuit board through the following steps S11 to S15.

[Step S11] A plurality of electrodes formed on the surfaces of the semiconductor substrate and the circuit board are embedded with an insulating resin. However, the electrode is exposed.
[Step S12] The semiconductor substrate and the circuit board covered with the insulating resin so that the electrodes are exposed are joined so that the electrodes and the insulating resins face each other. The insulating resin does not flow on the circuit board at any one of the four sides of the peripheral part of the semiconductor substrate in a state where the semiconductor substrate is tilted with respect to the circuit board at a temperature at which adhesiveness is exhibited without fluidization. Temporarily fix using adhesive force.

[Step S13] The outside air between the temporarily fixed semiconductor substrate and the circuit board is evacuated, and residual air between the semiconductor substrate and the circuit board is discharged.
[Step S14] The surfaces of the temporarily fixed semiconductor substrate and circuit substrate are uniformly pressurized. The insulating resin between the temporarily fixed semiconductor substrate and the circuit board is cured at a temperature at which the insulating resin is cured while maintaining a constant pressure by applying pressure.

[Step S15] The temporarily fixed electrodes of the semiconductor substrate and the circuit board are bonded together by metal bonding at a temperature at which the electrodes exhibit solid phase diffusion or the electrodes melt.
As described above, the pressure is applied to the semiconductor substrate and the circuit board that are bonded at a temperature lower than the temperature at which the insulating resin exhibits fluidity, and the semiconductor substrate and the circuit board are temporarily fixed by the adhesive force of the insulating resin. Insulating resin can be prevented from flowing into the formed electrodes. Furthermore, by vacuuming in a state of being temporarily fixed only at the outer peripheral portion of the semiconductor substrate, by pressurizing the semiconductor substrate and the circuit substrate temporarily fixed in a state in which residual air between the semiconductor substrate and the circuit substrate is discharged. , Suppress the formation of voids. Subsequently, by hardening the insulating resin while maintaining a constant pressure, the expansion of the insulating resin can be suppressed, and the inflow of the insulating resin to the electrode can be prevented. In addition, since the semiconductor substrate and the circuit board are pressed with a uniform pressure, it is possible to reliably bond the electrodes facing each other. Furthermore, after temporary fixing, when electrodes facing each other at a temperature at which solid phase diffusion occurs or the electrodes melt, metal electrodes are bonded between the electrodes, so that the electrodes can be reliably bonded to each other. It becomes possible.

Thus, according to the present invention, it is possible to realize a semiconductor device having a flip chip structure in which the bonding reliability between electrodes is improved.
Next, an embodiment will be described below with reference to FIGS.

First, bump electrodes formed on the surface of the semiconductor substrate are embedded using an insulating resin.
FIG. 2 is a schematic cross-sectional view of a semiconductor substrate in which bump electrodes are sealed with an insulating resin.
A plurality of bump electrodes 12 a are formed on the semiconductor substrate 11 using Cu as an electrode material. An insulating resin 13a, which is an epoxy adhesive, is applied between the plurality of bump electrodes 12a by a printing method, and the spaces between the bump electrodes 12a are embedded.

The bump electrode 12a on the semiconductor substrate 11 can be formed by, for example, an electrolytic plating method, an electroless plating method, a printing method, or a wire bump.
Further, when the space between the bump electrodes 12a is embedded with the insulating resin 13a, as shown in FIG. 2, when the insulating resin 13a is formed so as to cover the entire bump electrode 12a, a planarization process is performed as described below. By doing so, the bump electrode 12a can be exposed.

Next, the surface of the semiconductor substrate embedded with the insulating resin is planarized.
FIG. 3 is a schematic cross-sectional view of a semiconductor substrate in which the planarized bump electrodes are sealed with an insulating resin, and FIG. 4 is a cross-sectional view of the semiconductor substrate in which the planarized bump electrodes are sealed with an insulating resin. It is a schematic diagram.

  The sealed semiconductor substrate 10a is dried, for example, at a temperature of about 100 ° C. for about 30 minutes to be in a semi-cured state. It should be noted that the same effect can be obtained by pasting a semi-cured epoxy resin sheet on the semiconductor substrate 11 from the beginning instead of drying the applied insulating resin 13a to make it semi-cured. Can do.

  Then, the semi-cured sealed semiconductor substrate 10a is cut and flattened with a cutting tool 14 as shown in FIG. By cutting and flattening, not only the unevenness of the surface of the sealed semiconductor substrate 10a is reduced, but the bump electrode 12a buried in the insulating resin 13a is exposed. Note that planarization methods include CMP (Chemical Mechanical Polishing), grinding, and cutting. However, when flattening the semi-cured insulating resin and the bump electrode in this way, there is a problem of the insulating resin deterioration due to the use of a chemical solution in CMP, and grinding has a problem that the abrasive grains are buried in the insulating resin. Since cutting does not use chemicals or abrasive grains, these problems do not occur, and the bump electrode 12a is reliably exposed.

  Then, when the sealed semiconductor substrate 10a is cut and planarized, the sealed semiconductor substrate 10 is obtained as shown in FIG. The sealed semiconductor substrate 10 is configured by the exposed bump electrodes 12 and the insulating resin 13 embedded between the bump electrodes 12 on the semiconductor substrate 11.

Next, bump electrodes are formed on the surface of the circuit board, and after the formation, the space between the bump electrodes is filled with an insulating resin.
FIG. 5 is a schematic cross-sectional view of a circuit board in which a space between bump electrodes formed on the surface is embedded with an insulating resin.

  Unlike the sealed semiconductor substrate 10, the bump electrode 22 is formed on the circuit substrate 21 using the electrode material Sn. An insulating resin 23, which is an epoxy adhesive, is applied between the bump electrodes 22 by a printing method and embedded between the bump electrodes 22, so that a sealed circuit board 20 as shown in FIG. It is formed.

  The bump electrode 22 on the sealed circuit board 20 can be formed by, for example, an electrolytic plating method, an electroless plating method, a printing method, or a wire bump, similarly to the bump electrode 12a on the semiconductor substrate 11.

  Also, in the sealed circuit board 20, when the insulating resin 23 is formed so as to cover the entire bump electrode 22, as described in the formation of the sealed semiconductor substrate 10, By planarizing the surface of the circuit board 20 and the surface of the bump electrode 22, the bump electrode 22 can be exposed. In the circuit board 20, the insulating resin 23 may be completely cured. In the case of complete curing, since the embedding of abrasive grains is reduced, the bump electrode can be exposed by flattening by grinding and polishing in addition to cutting.

  Also, when the sealed circuit board 20 needs to be flattened, such as when the entire bump electrode 22 is covered with the insulating resin 23, a solder used for forming the bump electrode instead of the flattening process. By applying the resist so that the level difference from the bump electrode is within 3 μm, the same effect as the planarization treatment can be obtained.

Next, the semiconductor substrate prepared as described above and the circuit board are bonded.
The process of mounting the sealed semiconductor substrate 10 and the sealed circuit board 20 is roughly divided into a “temporary fixing” process, a “resin curing” process, and a “metal bonding” process. Divided into three.

FIG. 6 is a schematic cross-sectional view of the temporarily fixed semiconductor substrate and circuit board.
The bump electrodes 12 and 22 and the insulating resins 13 and 23 are opposed to each other by “temporarily fixing” with a flip chip bonder. Here, the semiconductor substrate 11 is temporarily fixed while being inclined with respect to the circuit board 21. Subsequently, “resin curing” is performed using an equal pressure bonding apparatus, and then the uniform pressure bonding apparatus is used continuously, or the electrodes are “metal bonded” using a heating furnace or a reflow furnace.

FIG. 7 is a graph of temperature, pressure, and atmospheric pressure when bonding a semiconductor substrate and a circuit board.
In order to bond the semiconductor substrate and the circuit board, the three steps of “temporary fixing” processing, “resin curing” processing, and “metal bonding” processing are performed as shown in FIG. Performed according to pressure and pressure.

  In the “temporary fixing” process, the semiconductor substrate and the circuit board are temporarily fixed via an insulating resin. In the next “resin curing” process, the insulating resin is cured by applying pressure to the temporarily fixed semiconductor substrate and circuit substrate and heating them. In the final “metal bonding” process, metal bonding is formed between the bump electrodes. The flip chip bonding between the semiconductor substrate and the circuit board is completed by the three processes as described above.

FIG. 8 is a schematic cross-sectional view of a semiconductor substrate and a circuit board mounted on the uniform pressure bonding apparatus.
The uniform pressure bonding apparatus 40 includes heaters 41a and 41b, a pump 42, a flip chip bonder 43, and side walls 44a and 44b.

  The pump 42 can be evacuated by freely adjusting the atmospheric pressure in the uniform pressure bonding apparatus 40. The flip chip bonder 43 made of an elastic material can move up and down along the side walls 44a and 44b of the uniform pressure bonding apparatus 40, and is mounted and sealed in the uniform pressure bonding apparatus 40. It is possible to freely apply pressure to the semiconductor substrate 10 and the sealed circuit board 20.

The details of each step of the “temporary fixing” process, the “resin curing” process, and the “metal bonding” process will be described below.
First, the “temporary fixing” process will be described.

  As shown in FIG. 6, after the paired sealed semiconductor substrate 10 and the sealed circuit board 20 are aligned by the flip chip bonder 43, the sealed semiconductor substrate 10 and the sealed semiconductor substrate 10 are sealed. The bumps 12 and 22 and the insulating resins 13 and 23 are opposed to the circuit board 20 that has been made, and is temporarily fixed using the adhesiveness of the insulating resins 13 and 23. At this time, in order to temporarily fix only one of the four sides of the peripheral portion of the sealed semiconductor substrate 10, the sealed semiconductor substrate 10 is 1 μm from a position parallel to the sealed circuit substrate 20. Tilt about 2 μm.

  The temporary fixing temperature at this time is about 100 ° C. at which the insulating resins 13 and 23 of the semi-cured epoxy adhesive exhibit adhesiveness. And the pressure of the flip chip bonder 43 for temporary fixation shall be 0.01 MPa-1 MPa.

Next, the “resin curing” process will be described.
As shown in FIG. 8, a plurality of sealed semiconductor substrates 10 and a plurality of sealed circuit substrates 20 that are temporarily fixed by a flip chip bonder 43 are mounted in the equal pressure bonding apparatus 40.

FIG. 9 is a schematic cross-sectional view of a semiconductor substrate and a circuit board mounted on a heated and pressurized uniform pressure bonding apparatus.
The “resin curing” process further includes two steps.

  First, in the uniform pressure bonding apparatus 40 on which the temporarily fixed sealed semiconductor substrate 10 and the sealed circuit board 20 are mounted, a temperature at which the insulating resins 13 and 23 do not flow, for example, about 100 ° C. The heaters 41a and 41b are used for adjustment, and the pump 42 is used to make a vacuum. Under these conditions, the temporarily fixed sealed semiconductor substrate 10 and the sealed circuit board 20 are subjected to a pressure of 0.3 MPa to several tens of MPa using a flip chip bonder 43 as shown in FIG. To maintain a constant pressure.

  Next, the temperature in the uniform pressure bonding apparatus 40 is adjusted and held at a temperature at which the insulating resins 13 and 23 are cured, for example, about 180 ° C. for about 10 minutes using the heaters 41a and 41b. , 23 is cured.

Finally, the “metal bonding” process will be described.
As shown in FIG. 9, along with the “resin hardening” process, solid phase diffusion occurs between the bump electrodes 12 and 22 between the Cu electrode and the Sn electrode, and an intermetallic compound of Cu and Sn (Cu ₆ Sn ₆ And Cu ₃ Sn).

  Furthermore, it cools to about 100 degreeC, hold | maintaining a pressure. Then, after the pressure and the atmospheric pressure are released, the bonded and sealed semiconductor substrate 10 and the sealed circuit board 20 are taken out from the uniform pressure bonding apparatus 40.

FIG. 10 is a schematic cross-sectional view of a bonded semiconductor substrate and circuit board being heated.
As shown in FIG. 10, the bonded and sealed semiconductor substrate 10 and the sealed circuit board 20 taken out from the uniform pressure bonding apparatus 40 are heated by an oven or the like at a temperature of 250 ° C. to 300 ° C. To do. When the bonded and sealed semiconductor substrate 10 and the sealed circuit board 20 are heated again, solid phase diffusion between the bump electrodes 12 and 22 further develops. As solid phase diffusion further progresses, phosphor bronze promotes a change from Cu ₆ Sn ₆ to Cu ₃ Sn, resulting in an electrode structure with less stress concentration, strengthening the bonding of bump electrodes 12 and 22, and a flip chip structure. A semiconductor device is completed.

  Therefore, as shown in the graph of FIG. 7, in the “temporary fixing” process, the temperature (temperature) at which the insulating resins 13 and 23 between the sealed semiconductor substrate 10 and the sealed circuit board 20 develop fluidity. A) Insulation resin to the exposed bump electrodes 12 and 22 by applying pressure (pressure X) and temporarily fixing the sealed semiconductor substrate 10 and the sealed circuit board 20 below. The inflow of 13, 23 can be prevented. Further, in the “temporary fixing” process, a vacuum is applied to the circuit substrate 20 that is sealed only on one of the four sides of the sealed semiconductor substrate 10 and then pressurized. The air remaining in the sealed semiconductor substrate 10 and the sealed circuit board 20 can be reliably discharged to prevent generation of voids. In the “resin curing” process, the pressure is continuously applied to maintain a constant pressure (pressure Y), and the insulating resins 13 and 23 are cured around the temperature (temperature B) at which the insulating resins 13 and 23 are cured. Therefore, the expansion of the insulating resins 13 and 23 can be suppressed, and the inflow of the insulating resins 13 and 23 to the exposed bump electrodes 12 and 22 can be prevented. In addition, since the pressure is applied by the uniform pressure by the flip chip bonder 43, the bonding between the bump electrodes 12 and 22 can be surely realized. Further, in the “metal bonding” process, after the “resin curing” process, a certain pressure (pressure Z) is applied, and at the temperature (temperature C) at which solid-phase diffusion of the bump electrodes 12 and 22 occurs or melts (temperature C). Metal bonding occurs between the electrodes 12 and 22, and the bonding between the bump electrodes 12 and 22 can be reliably realized.

Thus, according to the present invention, it is possible to realize a semiconductor device having a flip chip structure in which the bonding reliability between electrodes is improved.
FIG. 11 is a table of bonding conditions depending on combinations of resin and electrodes.

  In the present embodiment, an epoxy-based adhesive is used for the insulating resin and a Cu-Sn electrode is used for the bump electrode, and the semiconductor substrate and the circuit board are bonded under the conditions of the epoxy system, temperature, pressure, time, etc. of FIG. Bonding was performed.

  In addition to the materials mentioned in this embodiment, as shown in FIG. 11, for example, benzocyclobutene is used as the insulating resin, and Au—Sn base alloy is used as the bump electrode. Thus, even with the bonded semiconductor substrate and circuit board, the same effects as in the present embodiment can be obtained.

  In the present embodiment, the case where the semiconductor substrate and the circuit board are bonded to each other has been described as an example. However, the present embodiment can also be used for bonding between the semiconductor substrates or between the circuit boards. Can be obtained. On the other hand, when there is no description of the creation method, it is created using a known conventional method. In addition, as materials and bonding conditions for forming the insulating resin and electrodes, the materials and conditions described in the embodiment, or the materials and conditions shown in FIG. However, the same effect can be obtained even by combining material systems and conditions that can constitute the embodiment.

(Additional remark 1) In the manufacturing method of the semiconductor device which has a flip chip structure,
A step of embedding a gap between electrodes formed on each surface of a semiconductor substrate and a circuit board constituting a pair of substrates with an insulating material;
Tilting the semiconductor substrate with respect to the circuit board at a first temperature at which the insulating material exhibits adhesion;
Evacuating a plurality of the pair of temporarily fixed substrates;
Pressure is evenly applied to the surfaces of the pair of temporarily fixed substrates to bond the pair of substrates, and the pressure is maintained and the bonding is performed at a second temperature at which the insulating material is cured. Curing the insulating material;
Forming a metal bond between the bonded electrodes at a third temperature at which the electrodes exhibit solid phase diffusion or at which the electrodes melt;
A method for manufacturing a semiconductor device, comprising:

  (Supplementary note 2) The method of manufacturing a semiconductor device according to supplementary note 1, further comprising a step of planarizing a surface of the insulating material and a surface of the electrode after the step of filling the space between the electrodes with the insulating material. Method.

(Additional remark 3) The said planarization is performed by cutting, The manufacturing method of the semiconductor device of Additional remark 2 characterized by the above-mentioned.
(Additional remark 4) The manufacturing method of the semiconductor device of Additional remark 2 or 3 further having the process of semi-hardening the said insulating material before the process to planarize.

(Additional remark 5) The manufacturing method of the semiconductor device of any one of Additional remark 1 thru | or 4 using an epoxy-type adhesive agent or a benzocyclobutene-type adhesive agent for the said insulating material.
(Supplementary Note 6) The method for manufacturing a semiconductor device according to any one of Supplementary notes 1 to 5, wherein any one or two of gold, copper, tin, and a tin alloy is used for the electrode.

(Additional remark 7) The said electrode is formed on the said board | substrate using the electrolytic plating method, the electroless plating method, the printing method, or a wire bump, The manufacturing method of the semiconductor device of Additional remark 6 characterized by the above-mentioned.
(Additional remark 8) The manufacturing method of the semiconductor device of any one of Additional remark 1 thru | or 7 which performs the process of hardening the said insulating material in a vacuum.

(Additional remark 9) The manufacturing method of the semiconductor device of any one of Additional remark 1 thru | or 8 which performs the said temporary fixing process at 100 degreeC.
(Additional remark 10) The manufacturing method of the semiconductor device of any one of additional remark 1 thru | or 9 which performs the said temporary fixing process under the pressure of 0.01 Mpa to 1 Mpa.

  (Supplementary note 11) The method for manufacturing a semiconductor device according to supplementary note 5, wherein a step of curing the insulating material is performed at 120 ° C. to 200 ° C. when the epoxy adhesive is used as the insulating material.

(Supplementary note 12) The method of manufacturing a semiconductor device according to supplementary note 6, wherein the step of forming the metal junction is performed at 300 ° C. when copper and tin are used for the electrode.
(Additional remark 13) The said equal pressure is 0.3 Mpa to 10 Mpa, The manufacturing method of the semiconductor device of any one of Additional remark 1 thru | or 12 characterized by the above-mentioned.

  (Additional remark 14) Said 2nd temperature is higher than said 1st temperature, Said 3rd temperature is higher than said 2nd temperature, Any one of Additional remark 1 thru | or 13 characterized by the above-mentioned. A method for manufacturing a semiconductor device.

It is a flowchart figure showing the outline | summary of this invention. It is a cross-sectional schematic diagram of the semiconductor substrate by which the bump electrode was sealed with the insulating resin. It is a cross-sectional schematic diagram of the semiconductor substrate by which the planarized bump electrode was sealed with insulating resin. It is a cross-sectional schematic diagram of the semiconductor substrate by which the planarized bump electrode was sealed with the insulating resin. It is a cross-sectional schematic diagram of a circuit board in which a space between bump electrodes formed on the surface is embedded with an insulating resin. It is a cross-sectional schematic diagram of the temporarily fixed semiconductor substrate and circuit board. It is a graph of temperature, pressure, and atmospheric pressure when bonding a semiconductor substrate and a circuit board. It is a cross-sectional schematic diagram of the semiconductor substrate and circuit board mounted in the equal pressure bonding apparatus. It is a cross-sectional schematic diagram of the semiconductor substrate and circuit board which are mounted in the uniform pressure bonding apparatus heated and pressurized. It is a cross-sectional schematic diagram of the joined semiconductor substrate and circuit board which are heated. It is a table | surface of the joining conditions by the combination of resin and an electrode. It is a conventional example of a semiconductor substrate and a circuit board. It is the prior art example of the mounted semiconductor substrate and circuit board. It is a conventional example of a flattened semiconductor substrate and circuit board. It is the prior art example of the semiconductor substrate and circuit board which were planarized and mounted.

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 Sealed semiconductor substrate 11 Semiconductor substrate 12 Bump electrode 13 Insulating resin 20 Sealed circuit board 21 Circuit board 22 Bump electrode 23 Insulating resin 40 Equal pressure bonding apparatus 41a, 41b Heater 42 Pump 43 Flip chip bonder 44a, 44b Side wall

Claims (5)

In a method for manufacturing a semiconductor device having a flip chip structure,
A step of embedding a gap between electrodes formed on each surface of a semiconductor substrate and a circuit board constituting a pair of substrates with an insulating material;
Tilting the semiconductor substrate with respect to the circuit board at a first temperature at which the insulating material exhibits adhesion;
A step of evacuating the inside of the apparatus that can be evacuated with a pump, on which a plurality of the temporarily fixed substrates are placed , and using the pump ;
Pressure is evenly applied to the surfaces of the pair of temporarily fixed substrates to bond the pair of substrates, and the pressure is maintained and the bonding is performed at a second temperature at which the insulating material is cured. Curing the insulating material;
Forming a metal bond between the bonded electrodes at a third temperature at which the electrodes exhibit solid phase diffusion or at which the electrodes melt;
A method for manufacturing a semiconductor device, comprising:   2. The method of manufacturing a semiconductor device according to claim 1, further comprising a step of planarizing a surface of the insulating material and a surface of the electrode after the step of filling the space between the electrodes with the insulating material.   3. The method of manufacturing a semiconductor device according to claim 1, wherein an epoxy adhesive or a benzocyclobutene adhesive is used as the insulating material.   4. The method of manufacturing a semiconductor device according to claim 1, wherein any one or two of gold, copper, tin, and a tin alloy is used for the electrode. 5. The method of manufacturing a semiconductor device according to claim 4, wherein the electrode is formed on the semiconductor substrate and the circuit substrate by using an electrolytic plating method, an electroless plating method, a printing method, or a wire bump.

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