JP5005854B2 - Electrochemical devices - Google Patents
Electrochemical devices Download PDFInfo
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- JP5005854B2 JP5005854B2 JP2000620150A JP2000620150A JP5005854B2 JP 5005854 B2 JP5005854 B2 JP 5005854B2 JP 2000620150 A JP2000620150 A JP 2000620150A JP 2000620150 A JP2000620150 A JP 2000620150A JP 5005854 B2 JP5005854 B2 JP 5005854B2
- Authority
- JP
- Japan
- Prior art keywords
- nickel
- target
- layer
- oxide
- nickel oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 64
- 239000010410 layer Substances 0.000 claims description 57
- 229910000480 nickel oxide Inorganic materials 0.000 claims description 44
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 claims description 43
- 229910052759 nickel Inorganic materials 0.000 claims description 26
- 239000000463 material Substances 0.000 claims description 23
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 150000002500 ions Chemical class 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 229910052715 tantalum Inorganic materials 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 230000005291 magnetic effect Effects 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052741 iridium Inorganic materials 0.000 claims description 4
- 229910052727 yttrium Inorganic materials 0.000 claims description 4
- 229910000676 Si alloy Inorganic materials 0.000 claims description 3
- 229910052770 Uranium Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 230000003647 oxidation Effects 0.000 claims description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 3
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 229910001362 Ta alloys Inorganic materials 0.000 claims description 2
- 229910000946 Y alloy Inorganic materials 0.000 claims description 2
- 229910001297 Zn alloy Inorganic materials 0.000 claims description 2
- 229910052790 beryllium Inorganic materials 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 239000002346 layers by function Substances 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 1
- 229910000943 NiAl Inorganic materials 0.000 claims 1
- 229910005883 NiSi Inorganic materials 0.000 claims 1
- 229910003962 NiZn Inorganic materials 0.000 claims 1
- 241000849798 Nita Species 0.000 claims 1
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims 1
- 239000000654 additive Substances 0.000 description 20
- 230000000996 additive effect Effects 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 11
- 239000002184 metal Substances 0.000 description 11
- 238000003780 insertion Methods 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 7
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- 239000003792 electrolyte Substances 0.000 description 7
- 230000037431 insertion Effects 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 239000005357 flat glass Substances 0.000 description 6
- 230000036571 hydration Effects 0.000 description 5
- 238000006703 hydration reaction Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 230000005307 ferromagnetism Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 229910052744 lithium Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 150000001340 alkali metals Chemical class 0.000 description 2
- 150000001450 anions Chemical class 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 229910052792 caesium Inorganic materials 0.000 description 2
- 150000001768 cations Chemical class 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 238000004040 coloring Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002322 conducting polymer Substances 0.000 description 2
- 229920001940 conductive polymer Polymers 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052701 rubidium Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910001930 tungsten oxide Inorganic materials 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910052720 vanadium Inorganic materials 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NCXOIRPOXSUZHL-UHFFFAOYSA-N [Si].[Ca].[Na] Chemical compound [Si].[Ca].[Na] NCXOIRPOXSUZHL-UHFFFAOYSA-N 0.000 description 1
- 230000002745 absorbent Effects 0.000 description 1
- 239000002250 absorbent Substances 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- HTXDPTMKBJXEOW-UHFFFAOYSA-N dioxoiridium Chemical compound O=[Ir]=O HTXDPTMKBJXEOW-UHFFFAOYSA-N 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000006713 insertion reaction Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000037427 ion transport Effects 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 229910000457 iridium oxide Inorganic materials 0.000 description 1
- DCYOBGZUOMKFPA-UHFFFAOYSA-N iron(2+);iron(3+);octadecacyanide Chemical compound [Fe+2].[Fe+2].[Fe+2].[Fe+3].[Fe+3].[Fe+3].[Fe+3].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-].N#[C-] DCYOBGZUOMKFPA-UHFFFAOYSA-N 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000012078 proton-conducting electrolyte Substances 0.000 description 1
- 229960003351 prussian blue Drugs 0.000 description 1
- 239000013225 prussian blue Substances 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/085—Oxides of iron group metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/15—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect
- G02F1/1514—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material
- G02F1/1523—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on an electrochromic effect characterised by the electrochromic material, e.g. by the electrodeposited material comprising inorganic material
- G02F1/1524—Transition metal compounds
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Materials Engineering (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Nonlinear Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electrochromic Elements, Electrophoresis, Or Variable Reflection Or Absorption Elements (AREA)
- Physical Vapour Deposition (AREA)
Description
【0001】
本発明電気化学デバイス、および特にエレクトロクロミック窓ガラスもしくは鏡型で可変の光学的および/またはエネルギー的特性を有する電気的に制御しうる系に関する。
【0002】
公知の態様で、エレクトロクロミックシステムは、イオンおよび電子を可逆的に、かつ同時に挿入しうるエレクトロクロミック物質からの層からなり、挿入および脱挿入状態に相当するその酸化状態は、明らかな着色をし、その状態の1つは他よりも大きい光透過を示し、挿入および脱挿入反応は適切な電気供給により制御される。通常酸化タングステンにもとづくエレクトロクロミック物質は、透明な電気伝導層のような電子源およびイオン伝導電解質のようなイオン(カチオンもしくはアニオン)源と接触して置かれなければならない。
【0003】
さらに、少くとも何百回ものスイッチング操作を確実にするために、エレクトロクロミック物質層はイオンを可逆的に挿入しうる対電極と組合わされなければならず、エレクトロクロミック物質と対称的であるので、巨視的には電解質はイオンの単一媒体のようにみえる。
対電極は、中間色層、または少くとも透明もしくはエレクトロクロミック層が発色状態にあるときわずかに着色するのみである層、からなる。酸化タングステンは陰極発色物質である、すなわちその発色状態はもっとも還元された状態に相当する、ので、酸化ニッケルもしくは酸化イリジウムにもとづく陽極エレクトロクロミック物質は、対電極として使用されるのが一般的である。酸化状態で光学的に中性である物質、たとえば酸化セリウム、もしくは電子伝導ポリマー(ポリアニリン等)のような有機物質、またはプルシアンブルー、を使用することも提案されている。
【0004】
このような系の記述は、たとえばヨーロッパ特許EP338876,EP408427,EP575207およびEP628849にみられる。
これらの系は、使用する電解質の種類により2つのカテゴリーに、現在、分類されうる。
・電解質はポリマーもしくはゲルの形態であり、たとえばヨーロッパ特許EP253713およびEP670346に開示されるようなプロトン伝導ポリマー、または特許EP382623,EP518754もしくはEP532408に開示されるようなリチウムイオン伝達ポリマーである。
【0005】
・電解質は、イオンを伝導するが電子的に絶縁性である無機層であり、このような系は「全固体」(“all−solid”)エレクトロクロミック系といわれる。「全固体」エレクトロクロミック系の記述について、ヨーロッパ特許出願EP867752およびEP831360が参照されうる。
本発明は、そのようなエレクトロクロミック系の1部を形成しうる酸化ニッケルにもとづく陽極エレクトロクロミック物質層を得ることに特に向けられる。
【0006】
上述のように、酸化ニッケルはそのような特性を有することが知られており、特に特許EP373020に記載されている。
しかし、この物質は弱点を有する:ある問題が、標準的な真空蒸着法、磁場アシスト反応性陰極スパッタにより薄層の形態でそれを得るのに生じる:ニッケルは強磁性であるので、標準ニッケルターゲットおよび標準磁石を用いると、ターゲットの表面にあらわれる磁場は弱く、低い堆積速度および平凡なターゲット活用に帰着する。
【0007】
この種類の物質も特許出願WO98/14824で検討された:エレクトロクロミック鏡への使用において、検討は、バナジウム、クロム、マンガン、鉄もしくはコバルトのようなもう1つの金属で合金化された酸化ニッケルについて実施され、この組成の変化は鏡の機能を改良し、そして特にもっと均一な色釈を与えると述べられている。
【0008】
しかしながら、このように他の金属を酸化ニッケルに導入することは、酸化ニッケルの光学的およびエレクトロクロミック特性に関して危険を伴うようにみえる。このように、たとえばバナジウムおよびクロムの導入は、その酸化物は可視領域で吸収し、酸化ニッケルをもっと吸収剤にしやすく、したがって消色状態で全体として活性系の光透過値を低下させやすくなるというおそれがありうる。同様に、マンガン、鉄およびコバルトの導入は、層、そして全体として活性系の耐久性を低下させやすくなりうる。
【0009】
本発明の目的は、このようにこれらの弱点を、特に、陽極エレクトロクロミック特性を有する酸化ニッケルを製造する新規な方法を提案することにより改善することであり、この製造法は、特に、実施するのにより速く、もっと経済的に実行可能であり、もっと簡単であり、他に酸化ニッケルの望ましい機能性を損うこともない。「機能性」(“functionality”)は、安定性、エレクトロクロミック系、特にH+伝導性、もしくはLi+ 伝導型および「全固体」型、の耐久性ならびに薄層におけるときの消色状態での透明度に特に向けられる。
【0010】
本発明の主題は、陰極スパッタ装置、好適には、特に、薄層として対応する金属酸化物を得るために酸素の存在下で反応性雰囲気の磁場アシスト装置、の本質的に金属のターゲットであるのが第1であり、該ターゲットは主にニッケルを含み、その強磁性を減少もしくは消去さえするために少くとも1つの他の副次元素を混合されるが、同時にこのターゲットから得られる混合された酸化ニッケルの光学的および/または電気化学的特性をできるかぎり維持する。
【0011】
特に、このように本発明は、ターゲットに選択された元素を注意深く添加することにより、機能性を劣化させることなく、はるかに高速で、ターゲットとしてもっと良好な経済的実施可能な、酸化ニッケルにもとづく層を反応性スパッタによって得ることを可能にするという有利な調和をもたらす。製造効率の増大による最大の効果はニッケルの強磁性を十分に消去することにより達成されるが、添加される元素の化学的性質およびターゲットに配合されるこの元素の量を適切に変更することにより単に強磁性を減少するように選択されうる。
【0012】
一般に、このもしくはこれらの副次元素の混合物の割合は、組み合わされるニッケルと副次元素とに対して20原子%以下、好ましくは特に18%以下、そしてたとえば3%〜15%である。
本発明の目的に関しては、「酸化ニッケル」は、様々の程度に水和および/または水酸化および/またはプロトン化(および任意に窒化物処理されうる。同様に、ニッケルと酸素の化学量論は一般に、Ni/O比で1〜1/2の範囲で変わりうる。しかし、ニッケルは一般に主として+2の酸化状態にあると考えられうる。
【0013】
異なる変形もターゲットの化学的性質に関して可能であり、これらは代わりのもしくは累加的な変形である。
第1の変形は、その酸化物が陽極発色を有するエレクトロクロミック物質である金属である副次元素(簡単のために以下「添加物」で示す)にある。それは特に次の金属の少くとも1つであってもよい:Ir,Ru,Rh。理想的には、さらに、イリジウムの場合がもっとも好適であり,対応する酸化物は酸化ニッケルと同一もしくは近接した作動電圧範囲を有する:酸化ニッケルの機能性を妨害するどころか、添加物は酸化ニッケルをそのままに保持することが可能でありそして可逆的なイオン挿入能力を増加させることさえできる。この場合、酸化ニッケルの比較的厚い層と同一レベルの光学的/エネルギー的変更をなお保持するのに、層の厚さを減少することが期待さえしうる。
【0014】
第2の変形は、その酸化物が陰極発色を有するエレクトロクロミック物質である金属である添加物にある。それは特に次の金属の少くとも1つであってもよい:Mo,W,Re,Sn,In,Bi。このような物質をこのように酸化ニッケルに導入することは矛盾して、妨害に帰着するようにみえるかもしれない。実際に、上述の金属の酸化物は、陽極エレクトロクロミック物質として使用される酸化ニッケルにより達成される電位をはるかに超える作動電圧範囲で陰イオン挿入能力を有することが見出されている。したがって、酸化ニッケルにおける酸化形態で有効に見出されているこれらの添加物は、酸化ニッケルが電圧に置かれることにより色彩変動を受けるとき、不活性で、無色のままである:これらの添加物は活性系が機能し、消色状態でその光透過レベルを減少しないとき、中和される。一方、それらの存在は、全体として層のイオン挿入能力を減少させやすく、したがって必要ならば、この現象のために償うべき厚さを少し増加させることは可能であり、この大きさは続くすべての変形に対しても考えられうる。
【0015】
第3の変形は、その水和および/または水酸化酸化物がプロトン伝導体である金属、アルカリ土類金属もしくは半導体から得られる添加物にある。それは特に、次の元素の少くとも1つであってもよい:Ta,Zn,Zr,Al,Si,Sb,U,Be,Mg,Ca,Y。酸化形態のこれらの物質は著しいエレクトロクロミック特性を有してはいない。一方、それらはエレクトロクロミック系において、プロトン伝導電解質として役立つことができる物質として役立つ能力が知られている:それらは酸化ニッケルのエレクトロクロミック特性を本来促進しないが、それらはともかくその機能性に負の影響を与えず、酸化ニッケルに望まれうる水酸化/水和の安定性を促進しやすい。いうまでもなく、この変形は、プロトンH+ の可逆的挿入により機能するエレクトロクロミック系に本質的に向けられることが注目されるべきである。
【0016】
第4の変形は、その酸化物が吸湿性である元素である添加物にあり、この特徴は、エレクトロクロミック系がイオン、もっとも好ましくはプロトンのようなカチオン、の挿入/脱挿入による1つの機能であるときに有利である。これらの添加物は、通常アルカリ金属、特にLi,Na,K,Rb,Csである。酸化ニッケル中に酸化形態にあると、これらの物質は、エレクトロクロミック系において陽極エレクトロクロミック物質として作用するとき、最も特に酸化ニッケルが水和/水酸化されているときに、層に含まれる水の保持をきっとおそらく促進することにより、酸化ニッケルの安定性を改良することがわかる。
【0017】
本発明ターゲットの好適な態様は、合金Ni/Si,Ni/Al,Ni/Sn,Ni/W,Ni/Zn,Ni/TaおよびNi/Yであり、最初の3つの合金は製造するのに比較的安価である。合金ターゲットは真空蒸着の分野で知られている方法、たとえば合金となるべき金属粉末の高温焼結により製造される。考えられる合金全体に対するある添加物の原子比についての指摘が下記になされ、その割合はターゲットの強磁性が十分に消去されるように調節される:
・Ni/W合金について、約7原子%のタングステンWを供給することが必要である。
【0018】
・Ni/Zn合金について、約18原子%の亜鉛Znを供給することが必要である。
・Ni/Ta合金について、約9原子%のタンタルTaを供給することが必要である。
・Ni/Sn合金について、約8原子%のスズSnを供給することが必要である。
【0019】
・Ni/Si合金について、約10原子%のケイ素Siを供給することが必要である。
・Ni/Y合金について、約3原子%のイットリウムYを供給することが必要である。
しかしながら、上述のとおり、たとえばターゲットの製造コストを制限するために、および/または得られるニッケル合金酸化物の機能性の減少を制限するために、十分にその強磁性を消去するのに必要であるよりも少ない量の添加物をニッケルに添加することも選択されうる。
【0020】
本発明の主題は、さらに、ニッケル合金酸化物にもとづく薄層の製造方法であり、それは任意に水和および/または水酸化および/またはプロトン化および/または窒化物処理されており、そして上述のターゲットからの、酸化性の反応性雰囲気中で磁場アシスト陰極スパッタの方法を用いる。
さらに、本発明の主題は、該酸化物にもとづく薄層のような陽極エレクトロクロミック物質のこの製造方法の使用である。
【0021】
さらに、本発明の主題は、H+,Li+およびOH- のようなイオンならびに電子を可逆的に、かつ同時に挿入しうる、少くとも1つの電気化学的活性層を含む機能層を積層にしたものを備える少くとも1つのキャリア基体からなる電気化学デバイスであり、該層は該酸化物にもとづく。
この酸化物は、その組成が上で概説された4つの変形で明らかにされたターゲットから得られる。さらに、一般的にはターゲットの合金中のニッケルに対する添加物の原子比が、考慮中のターゲットから得られる酸化物層におけるニッケルに対する添加物の原子比の範囲内であるのが通常であることが注目されうる。
【0022】
ニッケルターゲットへの本発明による添加物の添加は当該のターゲットから得られる酸化物層の構造に影響することがわかった。添加物の存在は酸化ニッケルの結晶化を嫌うようにみえる:主として無定形である層は、このように得られるが、小さい結晶「粒」を有することが、最も特に、W,Si及びLi型の添加物について確められた。これらの形状を球と近似すると、これらの粒は通常50nm未満、特に少くとも2〜3nmの径を有する。標準酸化ニッケルの場合よりも大きい無定形相および/または小さい結晶粒を有するのが有利である。なぜなら、酸化ニッケルのエレクトロクロミック特性を活用するエレクトロクロミック装置で活性なのは、結晶部分よりも、むしろ、とりわけ層の無定形部分であるからである。本発明による層は、したがってシート間にLi型のインターカレーション化合物を有するシート構造を有するのではなく、むしろ均一に粒として分布する全体的な無定形構造を有する。
【0023】
その層は、任意に水和/水酸化および/または窒化物で処理される酸化ニッケルにもとづき、酸化ニッケルはIr,RuもしくはRhのような、その酸化物が陽極エレクトロクロミック物質である少くとも1つの添加物で合金化される(を混合される)か、またはたとえばMo,W,Re,Sn,InもしくはBiのような、その酸化物が陰極エレクトロクロミック物質である少くとも1つの金属で合金化されるか、またはTa,Zn,Zr,Al,Si,Sb,U,Mg,LaもしくはYのようなその水和および/または水酸化酸化物がプロトン導体である少くとも1つのアルカリ土類金属もしくは半導体で合金化される。最後に、酸化ニッケルは、その酸化物が吸湿性、たとえばLi,Na,K,RbもしくはCsのようなアルカリ金属である添加物で合金化されうる。
【0024】
ここで、「合金化される」(“alloyed”)という用語は、次の意味を有することが注目されるべきである:当該添加物は、酸化物形態の酸化ニッケルと組合わされる。この酸化物は酸化ニッケルの微小ドメインから形成されるマトリックスの形態であり得、その内部は当該添加物の酸化物にもとづく微小ドメインである。系はさらに、純混合酸化物であってもよく、そのニッケル原子は当該添加物の原子で置換されている。
【0025】
好適な態様はNiSixOy,NiAlxOy、NiSnxOy,NiWxOy,NiZnxOy,NaTaxOyおよびNiYxOyである。
さらに、得られる層は水和および/または水酸化および/またはプロトン化および/または窒化物処理されてもよく、層の水和、プロトン化および/または水酸化および/または窒化物処理の程度の制御は陰極スパッタ堆積パラメータを適切に調節することにより特に達成され、たとえば堆積の間、反応性雰囲気の組成を適合させることによる(特許EP831360において電解質層に特に期待されたように)。反応性雰囲気は、少くともその1つの原子が窒素である、ある量の分子を特に含みうる。
【0026】
最後に、さらに本発明の主題は、エレクトロクロミック窓ガラス(glazing)の1部を形成するためのこれらの電気化学デバイスの使用である。この窓ガラスは外部窓ガラスもしくは内部仕切りもしくは窓ガラスをはめたドアとして建物に備えられうる。さらに、それは、汽車、船、飛行機、乗用車もしくはトラックのような交通手段にサイドウィンドー、サンルーフ等として備えられ得る。さらに、それはディスプレイスクリーン窓ガラス、たとえばコンピューターもしくはテレビジョンのスクリーンもしくはタッチスクリーン、めがね、写真用品の対物レンズならびに太陽パネル保護に使用されうる。さらに、それは鏡、たとえば乗物のまぶしさ防止バックミラーをつくるためにも用いられうる(導電層の1つを十分に厚くすることにより、および/または不透明化コーティングを付可することにより)。それはさらに電池およびバッテリーのようなエネルギー貯蔵デバイスを製造するのに用いられうる。
【0027】
本発明の他の有利な詳細および特徴は種々の制限的でない態様から次に明らかになろう。
次の実施例はいわゆる「全固体」エレクトロクロミック窓ガラスである。
比較例1
窓ガラスは次の配列を有する:
【0028】
【化1】
・ガラス(1)は標準的な透明ケイ素−ナトリウム−カルシウム板ガラスである。
・フッ素ドープ酸化スズでつくられる層(2)はCVDによる公知の方法で得られる第1の透明導電層である。
【0029】
・NiOxHyでつくられる層(3)は、対電極、系の陽極エレクトロクロミック物質であり、約99.95原子%のニッケルを含むニッケルターゲットからAr/O2/H2反応性雰囲の存在下、陰極スパッタにより得られる;
・WO3でつくられる層(4)およびTa2O5 でつくられる層(5)は、電解質を形成するが、Wの、およびTaのターゲットから陰極スパッタにより公知の方法で堆積される(とくに特許EP867752の教示による);
・HxWO3 でつくられる層(6)は陰極エレクトロクロミック物質の層であり、タングステンターゲットから反応性スパッタにより公知の方法で堆積される;
・スズドープ酸化インジウムでつくられる層(7)は第2の透明導電層であり、インジウムおよびスズでつくられる合金ターゲットから陰極スパッタにより公知の方法で堆積される。
【0030】
この窓ガラスは、適切な方法で窓ガラスにわたって発生される電位差を変えることによって、1つのエレクトロクロミック層から他の層へのプロトン移動により機能する。
NiOxHyでつくられる層(3)は得るのが困難である。その堆積速度は4nm.m/分にすぎない。ターゲットは均一には被覆されない(被覆度は5%未満である)。
本発明による実施例2
これは、NiOxHyでつくられる層(3)を250nm厚さのNiSizOxHyでつくられる層3aで置き換えることにあり、Ni+Siに対するSi約10原子%の割合を有するNi/Si合金ターゲットからAr/O2/H2反応性雰囲気中で陰極スパッタにより得られる。
本発明による実施例3
これはNiOxHyでつくられる層(3)を250nm厚さのNiWzOxHyでつくられる層3bで置き換えることにあり、Ni+Wに対するW約7原子%の割合を有するNi+W合金ターゲットから上述のように得られる。下の表1は上の3つの実施例により得られる、酸化ニッケルにもとづく層の堆積速度を示し、これらの速度はnm.m/分(3.5w/cm2 での堆積)で表される:
【0031】
【表1】
上述の層で被覆されたガラスは、電圧発生器に公知の方法で連結される電力供給を備える。ついで、それらは1.25mm厚さのポリウレタンシートにより第1と同一の第2ガラスで積層される。
【0032】
3つの積層窓ガラス試料は、ついで、発色/消色サイクル(約−1.2Vの電圧を印加することにより発色、そして約0.8Vの電圧を印加することにより消色)に供された。窓ガラス試料が発色され(「発色」)、ついで消色される(「消色」)されるときに、光透過における測色系(L,a*,b*)のa*およびb*の光透過率TL (%)、ならびにエネルギー伝達率TE (%)(TL 測定に対する対照:発光体D65)が、ついで測定され、下の表2は3つの窓ガラス試料に関するすべてのこれらのデータを一緒にする:
【0033】
【表2】
これらのデータから、酸化ニッケルにもとづくエレクトロクロミック物質になされた変化はその性能に影響しないことを確かめることができる:
本発明による実施例2および3で達成される光透過率の範囲およびエネルギー伝達の範囲は比較例1のとほとんど同一であり、透過の測色状況は有意には変わっていない。一方、本発明による酸化ニッケルにもとづく層の堆積速度は、酸化ニッケルにもとづく標準的な層の堆積速度より少くとも5倍は高い。[0001]
The present invention relates to electrochemical devices, and in particular to electrochromic glazing or mirror-type electrically controllable systems with variable optical and / or energetic properties.
[0002]
In a known manner, an electrochromic system consists of a layer from an electrochromic material that can reversibly and simultaneously insert ions and electrons, whose oxidation state corresponding to the insertion and de-insertion states is clearly colored. One of the states exhibits greater light transmission than the other, and the insertion and de-insertion reactions are controlled by a suitable electrical supply. Electrochromic materials, usually based on tungsten oxide, must be placed in contact with an electron source such as a transparent electrically conductive layer and an ion (cation or anion) source such as an ion conducting electrolyte.
[0003]
Furthermore, in order to ensure at least hundreds of switching operations, the electrochromic material layer must be combined with a counter electrode that can reversibly insert ions, and is symmetrical with the electrochromic material, Macroscopically, the electrolyte looks like a single medium of ions.
The counter electrode consists of an intermediate color layer, or a layer that is at least slightly colored when the transparent or electrochromic layer is in the colored state. Tungsten oxide is a cathode coloring material, that is, its coloring state corresponds to the most reduced state, so an anodic electrochromic material based on nickel oxide or iridium oxide is generally used as a counter electrode. . It has also been proposed to use substances that are optically neutral in the oxidized state, for example cerium oxide, or organic substances such as electron conducting polymers (polyaniline, etc.), or Prussian blue.
[0004]
A description of such a system can be found, for example, in European patents EP338876, EP408427, EP575207 and EP628849.
These systems can now be classified into two categories depending on the type of electrolyte used.
The electrolyte is in the form of a polymer or gel, for example a proton conducting polymer as disclosed in European patents EP253713 and EP670346, or a lithium ion transport polymer as disclosed in patents EP382623, EP518754 or EP532408.
[0005]
The electrolyte is an inorganic layer that conducts ions but is electronically insulative, and such a system is referred to as an “all-solid” electrochromic system. Reference can be made to European patent applications EP8677752 and EP831360 for a description of “all-solid” electrochromic systems.
The present invention is particularly directed to obtaining an anode electrochromic material layer based on nickel oxide that can form part of such an electrochromic system.
[0006]
As mentioned above, nickel oxide is known to have such properties and is described in particular in patent EP373020.
However, this material has weaknesses: a problem arises in obtaining it in the form of a thin layer by standard vacuum deposition methods, magnetic field assisted reactive cathodic sputtering: since nickel is ferromagnetic, a standard nickel target And with standard magnets, the magnetic field that appears on the surface of the target is weak, resulting in low deposition rates and mediocre target utilization.
[0007]
This type of material was also discussed in patent application WO 98/14824: For use in electrochromic mirrors, considerations have been made for nickel oxides alloyed with another metal such as vanadium, chromium, manganese, iron or cobalt. Implemented, this compositional change is stated to improve the function of the mirror and give a particularly uniform coloration.
[0008]
However, this introduction of other metals into nickel oxide seems dangerous with respect to the optical and electrochromic properties of nickel oxide. Thus, for example, the introduction of vanadium and chromium means that the oxide absorbs in the visible region, and nickel oxide is more likely to be an absorbent, and thus tends to reduce the light transmission value of the active system as a whole in the decolored state. There may be a fear. Similarly, the introduction of manganese, iron and cobalt can tend to reduce the durability of the layer, and overall the active system.
[0009]
The object of the present invention is thus to ameliorate these weaknesses, in particular by proposing a new method for producing nickel oxides having anodic electrochromic properties, which production method is implemented in particular. It is faster, more economically feasible, simpler, and does not otherwise detract from the desirable functionality of nickel oxide. “Functionality” means stability, durability of electrochromic systems, especially H + conductivity, or Li + conductivity and “all solid” types, and in the decolored state when in thin layers Specially directed to transparency.
[0010]
The subject of the present invention is an essentially metal target of a cathode sputtering device, preferably a magnetic field assist device in a reactive atmosphere in the presence of oxygen, in particular to obtain the corresponding metal oxide as a thin layer The target is primarily nickel and is mixed with at least one other sub- element to reduce or even eliminate its ferromagnetism, but at the same time the mixed obtained from this target Maintain the optical and / or electrochemical properties of the nickel oxide as much as possible.
[0011]
In particular, the present invention is thus based on nickel oxide, which is much faster and more economically feasible as a target without degrading functionality by carefully adding selected elements to the target. This provides an advantageous harmony that allows the layers to be obtained by reactive sputtering. The greatest effect of increasing production efficiency is achieved by sufficiently eliminating the ferromagnetism of nickel, but by appropriately changing the chemical nature of the added element and the amount of this element incorporated into the target. It can be chosen simply to reduce ferromagnetism.
[0012]
In general, the proportion of this or a mixture of these subelements is not more than 20 atomic%, preferably not more than 18%, and for example 3% to 15%, relative to the combined nickel and subelements .
For purposes of the present invention, “nickel oxide” can be hydrated and / or hydroxylated and / or protonated (and optionally nitrided to varying degrees. Similarly, the stoichiometry of nickel and oxygen is In general, the Ni / O ratio can vary from 1 to 1/2, but nickel can generally be considered primarily in the +2 oxidation state.
[0013]
Different variations are possible with respect to the target chemistry and these are alternative or progressive variations.
The first variation is in a subelement (hereinafter referred to as “additive” for simplicity) whose metal is an electrochromic material having an anodic color. It may in particular be at least one of the following metals: Ir, Ru, Rh. Ideally, in addition, iridium is most preferred, and the corresponding oxide has an operating voltage range that is the same as or close to that of nickel oxide: rather than interfering with the functionality of nickel oxide, the additive is nickel oxide. It can be kept intact and can even increase the reversible ion insertion capacity. In this case, it can even be expected to reduce the layer thickness while still retaining the same level of optical / energy change as the relatively thick layer of nickel oxide.
[0014]
The second variant resides in an additive whose oxide is a metal that is an electrochromic material having a cathodic color. It may in particular be at least one of the following metals: Mo, W, Re, Sn, In, Bi. Introducing such materials into nickel oxide in this way may seem contradictory and result in interference. Indeed, the metal oxides described above have been found to have anion insertion capability in the operating voltage range far exceeding the potential achieved by nickel oxide used as the anodic electrochromic material. Thus, these additives found effectively in the oxidized form in nickel oxide remain inert and colorless when the nickel oxide undergoes color variations due to being placed on voltage: these additives Is neutralized when the active system functions and does not reduce its light transmission level in the decolored state. On the other hand, their presence tends to reduce the ion insertion capacity of the layer as a whole, and therefore, if necessary, it is possible to slightly increase the thickness to be compensated for this phenomenon, and this magnitude is It can also be considered for deformation.
[0015]
The third variant is in an additive obtained from a metal, alkaline earth metal or semiconductor whose hydration and / or hydroxide oxide is the proton conductor. It may in particular be at least one of the following elements: Ta, Zn, Zr, Al, Si, Sb, U, Be, Mg, Ca, Y. These materials in oxidized form do not have significant electrochromic properties. On the other hand, they are known for their ability to serve as substances that can serve as proton conducting electrolytes in electrochromic systems: they do not inherently promote the electrochromic properties of nickel oxide, but they are negative for their functionality anyway. It has no effect and tends to promote the hydroxylation / hydration stability that can be desired for nickel oxide. Of course, it should be noted that this variation is essentially directed to an electrochromic system that functions by reversible insertion of proton H + .
[0016]
The fourth variant is in an additive whose oxide is an element that is hygroscopic, this feature being one function by the insertion / deinsertion of an electrochromic system, most preferably a cation such as a proton. Is advantageous. These additives are usually alkali metals, in particular Li, Na, K, Rb, Cs. When in the oxidized form in nickel oxide, these materials act as anodic electrochromic materials in the electrochromic system, most particularly when the nickel oxide is hydrated / hydroxylated, the water contained in the layer. It can be seen that the stability of nickel oxide is improved by probably promoting retention.
[0017]
Preferred embodiments of the target of the present invention are the alloys Ni / Si, Ni / Al, Ni / Sn, Ni / W, Ni / Zn, Ni / Ta and Ni / Y, the first three alloys being manufactured. It is relatively inexpensive. The alloy target is produced by methods known in the field of vacuum deposition, for example by high temperature sintering of metal powders to be alloyed. Noted for atomic ratios of additives with respect to the entire conceivable alloy is made below, the ratio is adjusted so that the ferromagnetic targets are sufficiently erased:
• For Ni / W alloys, it is necessary to supply about 7 atomic percent tungsten W.
[0018]
• For Ni / Zn alloys, it is necessary to supply about 18 atomic percent zinc Zn.
• For Ni / Ta alloys, it is necessary to supply about 9 atomic% tantalum Ta.
• For Ni / Sn alloys, it is necessary to supply about 8 atomic percent tin Sn.
[0019]
• For Ni / Si alloys, it is necessary to supply about 10 atomic percent silicon Si.
It is necessary to supply about 3 atomic% yttrium Y for the Ni / Y alloy.
However, as described above, it is necessary to sufficiently erase its ferromagnetism, for example, to limit the manufacturing cost of the target and / or to limit the decrease in functionality of the resulting nickel alloy oxide. It may also be chosen to add lesser amounts of additive to the nickel.
[0020]
The subject of the invention is furthermore a method for the production of a thin layer based on nickel alloy oxide, which is optionally hydrated and / or hydroxylated and / or protonated and / or nitrided and A magnetic field assisted cathode sputtering method is used in an oxidizing reactive atmosphere from a target.
Furthermore, the subject of the present invention is the use of this method of manufacturing anodic electrochromic materials such as thin layers based on the oxide.
[0021]
Furthermore, the subject of the present invention is a stack of functional layers including at least one electrochemically active layer capable of reversibly and simultaneously inserting ions and electrons such as H +, Li + and OH− . An electrochemical device consisting of at least one carrier substrate comprising a layer based on the oxide.
This oxide is obtained from a target whose composition has been revealed in the four variants outlined above. In addition, the atomic ratio of the additive to nickel in the target alloy is generally within the range of the atomic ratio of the additive to nickel in the oxide layer obtained from the target under consideration. It can be noted.
[0022]
It has been found that the addition of the additive according to the present invention to the nickel target affects the structure of the oxide layer obtained from the target. The presence of the additive seems to dislike the crystallization of nickel oxide: a layer that is primarily amorphous can be obtained in this way, but it is most particularly W, Si and Li type to have small crystal “grains”. Was confirmed for the additives. Approximating these shapes to spheres, these grains usually have a diameter of less than 50 nm, in particular at least 2-3 nm. It is advantageous to have a larger amorphous phase and / or smaller grains than in standard nickel oxide. This is because the electrochromic device that utilizes the electrochromic properties of nickel oxide is particularly active in the amorphous part of the layer rather than the crystalline part. The layer according to the invention therefore does not have a sheet structure with Li-type intercalation compounds between the sheets, but rather an overall amorphous structure that is distributed uniformly as grains.
[0023]
The layer is based on nickel oxide optionally treated with hydration / hydration and / or nitride, the nickel oxide being at least 1 in which the oxide is an anodic electrochromic material, such as Ir, Ru or Rh. Alloyed with one additive or alloyed with at least one metal whose oxide is a cathodic electrochromic material, such as Mo, W, Re, Sn, In or Bi Or at least one alkaline earth whose hydrated and / or hydroxide oxides such as Ta, Zn, Zr, Al, Si, Sb, U, Mg, La or Y are proton conductors Alloyed with metal or semiconductor. Finally, nickel oxide can be alloyed with an additive whose oxide is hygroscopic, for example an alkali metal such as Li, Na, K, Rb or Cs.
[0024]
It should be noted here that the term “alloyed” has the following meaning: the additive is combined with nickel oxide in oxide form. The oxide may be in the form of a matrix formed from nickel oxide microdomains, the interior of which is a microdomain based on the oxide of the additive. The system may further be a pure mixed oxide, whose nickel atoms are replaced by atoms of the additive.
[0025]
Preferred embodiments are NiSixOy, NiAlxOy, NiSnxOy, NiWxOy, NiZnxOy, NaTaxOy and NiYxOy.
Furthermore, the resulting layer may be hydrated and / or hydroxylated and / or protonated and / or nitrided, to the extent of hydration, protonated and / or hydroxylated and / or nitrided of the layer. Control is achieved in particular by appropriately adjusting the cathode sputter deposition parameters, for example by adapting the composition of the reactive atmosphere during deposition (as specifically expected for the electrolyte layer in patent EP831360). The reactive atmosphere may specifically contain a certain amount of molecules, at least one atom of which is nitrogen.
[0026]
Finally, a further subject of the present invention is the use of these electrochemical devices to form part of an electrochromic glazing. This window glass can be provided in a building as an external window glass or an internal partition or a door fitted with a window glass. Furthermore, it can be provided as a side window, sunroof etc. in transportation means such as trains, ships, airplanes, passenger cars or trucks. In addition, it can be used for display screen panes, such as computer or television screens or touch screens, glasses, objectives for photographic articles and solar panel protection. It can also be used to make mirrors, such as vehicle anti-glare rearview mirrors (by making one of the conductive layers sufficiently thick and / or by applying an opacifying coating). It can also be used to manufacture batteries and energy storage devices such as batteries.
[0027]
Other advantageous details and features of the invention will now become apparent from various non-limiting embodiments.
The next example is a so-called “all-solid” electrochromic glazing.
Comparative Example 1
The window glass has the following arrangement:
[0028]
[Chemical 1]
Glass (1) is a standard transparent silicon-sodium-calcium plate glass.
The layer (2) made of fluorine-doped tin oxide is a first transparent conductive layer obtained by a known method by CVD.
[0029]
Layer (3) made of NiOxHy is a counter electrode, system anodic electrochromic material, from a nickel target containing about 99.95 atomic% nickel in the presence of an Ar / O 2 / H 2 reactive atmosphere Obtained by cathodic sputtering;
The layer (4) made of WO 3 and the layer (5) made of Ta 2 O 5 form an electrolyte but are deposited in a known manner by cathode sputtering from W and Ta targets (especially According to the teaching of patent EP8677752);
The layer (6) made of HxWO 3 is a layer of cathodic electrochromic material, deposited in a known manner by reactive sputtering from a tungsten target;
The layer (7) made of tin-doped indium oxide is the second transparent conductive layer and is deposited in a known manner by cathode sputtering from an alloy target made of indium and tin.
[0030]
This glazing functions by proton transfer from one electrochromic layer to another by changing the potential difference generated across the glazing in an appropriate manner.
The layer (3) made of NiOxHy is difficult to obtain. The deposition rate is 4 nm. Only m / min. The target is not uniformly coated (coverage is less than 5%).
Example 2 according to the invention
This is to replace the layer (3) made of NiOxHy with a layer 3a made of NiSizOxHy with a thickness of 250 nm, from an Ni / Si alloy target having a ratio of about 10 atomic% of Si to Ni + Si from Ar / O 2 / Obtained by cathode sputtering in an H 2 reactive atmosphere.
Example 3 according to the invention
This consists in replacing the layer (3) made of NiOxHy with a layer 3b made of NiWzOxHy with a thickness of 250 nm, obtained as described above from a Ni + W alloy target having a ratio of about 7 atomic% W to Ni + W. Table 1 below shows the deposition rates of the layers based on nickel oxide obtained by the above three examples, these rates being in nm. Expressed in m / min (deposition at 3.5 w / cm 2 ):
[0031]
[Table 1]
The glass coated with the above-mentioned layer comprises a power supply which is connected to the voltage generator in a known manner. They are then laminated with the same second glass as the first with a 1.25 mm thick polyurethane sheet.
[0032]
The three laminated glazing samples were then subjected to a color development / decoloring cycle (color development by applying a voltage of about -1.2V and color erasure by applying a voltage of about 0.8V). When a window glass sample is colored (“colored”) and then decolored (“decolored”), the colorimetric system (L, a * , b * ) of a * and b * in light transmission The light transmission T L (%), as well as the energy transfer rate T E (%) (control for T L measurement: illuminant D 65 ) was then measured, and Table 2 below shows all these for three pane samples. Put the data together:
[0033]
[Table 2]
From these data, it can be confirmed that changes made to the electrochromic material based on nickel oxide do not affect its performance:
The range of light transmittance and the range of energy transmission achieved in Examples 2 and 3 according to the present invention are almost the same as those of Comparative Example 1, and the colorimetric state of transmission is not significantly changed. On the other hand, the deposition rate of the layer based on nickel oxide according to the invention is at least five times higher than the deposition rate of a standard layer based on nickel oxide.
Claims (1)
(1)ニッケル系ターゲットがNi/Si合金ターゲットであり、ニッケル酸化物にもとづく層がNiSi x O y の形態である;
(2)ニッケル系ターゲットがNi/Al合金ターゲットであり、ニッケル酸化物にもとづく層がNiAl x O y の形態である;
(3)ニッケル系ターゲットがNi/Zn合金ターゲットであり、ニッケル酸化物にもとづく層がNiZn x O y の形態である;
(4)ニッケル系ターゲットがNi/Ta合金ターゲットであり、ニッケル酸化物にもとづく層がNiTa x O y の形態である;または
(5)ニッケル系ターゲットがNi/Y合金ターゲットであり、ニッケル酸化物にもとづく層がNiY x O y の形態である、電気化学デバイスの作製方法。A method for producing an electrochemical device comprising at least one carrier substrate comprising a stack of functional layers comprising at least one electrochemically active layer capable of reversibly and simultaneously inserting ions and electrons. The method includes magnetic field assisted cathode sputtering using a nickel-based target in an oxidation reactive atmosphere, and materials to be alloyed with nickel oxide include Ir, Ru, Rh, Mo, W, Re, Sn, In, and Bi. , Ta, Zn, Zr, Al, Si, Sb, U, Be, Mg, Ca and Y , where the layer based on the nickel-based target and nickel oxide is
(1) The nickel-based target is a Ni / Si alloy target and the layer based on nickel oxide is in the form of NiSi x O y ;
(2) The nickel-based target is a Ni / Al alloy target, and the layer based on nickel oxide is in the form of NiAl x O y ;
(3) The nickel-based target is a Ni / Zn alloy target and the layer based on nickel oxide is in the form of NiZn x O y ;
(4) Nickel-based target is a Ni / Ta alloy target, a layer based on nickel oxide is in the form of a NiTa x O y; or
(5) a nickel-based target is Ni / Y alloy target, a layer based on nickel oxide Ru form der of NiY x O y, a method for manufacturing an electrochemical device.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR99/06408 | 1999-05-20 | ||
| FR9906408A FR2793888B1 (en) | 1999-05-20 | 1999-05-20 | ELECTROCHEMICAL DEVICE |
| PCT/FR2000/001388 WO2000071777A1 (en) | 1999-05-20 | 2000-05-19 | Electrochemical device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003500534A JP2003500534A (en) | 2003-01-07 |
| JP2003500534A5 JP2003500534A5 (en) | 2007-07-19 |
| JP5005854B2 true JP5005854B2 (en) | 2012-08-22 |
Family
ID=9545804
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2000620150A Expired - Fee Related JP5005854B2 (en) | 1999-05-20 | 2000-05-19 | Electrochemical devices |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP1109945A1 (en) |
| JP (1) | JP5005854B2 (en) |
| KR (1) | KR100686611B1 (en) |
| FR (1) | FR2793888B1 (en) |
| WO (1) | WO2000071777A1 (en) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SE0103198D0 (en) * | 2001-09-26 | 2001-09-26 | Andris Azens | Electrochromic film and device comprising the same |
| FR2833107B1 (en) * | 2001-12-05 | 2004-02-20 | Saint Gobain | ELECTRODE OF ELECTROCHEMICAL / ELECTROCOMMANDABLE DEVICES |
| FR2835534B1 (en) | 2002-02-06 | 2004-12-24 | Saint Gobain | NON STOECHIOMETRIC CERAMIC TARGET NiOx |
| HUP0500069A2 (en) | 2002-02-20 | 2005-04-28 | Saint-Gobain Glass France | Glass pane with rigid element optionally incorporated in an overmoulded plastic part |
| US7372610B2 (en) | 2005-02-23 | 2008-05-13 | Sage Electrochromics, Inc. | Electrochromic devices and methods |
| FR2904704B1 (en) | 2006-08-04 | 2008-12-05 | Saint Gobain | ELECTROCHEMICAL DEVICE, AND / OR ELELCTROCOMMANDABLE OF THE GLAZING TYPE AND HAVING VARIABLE OPTICAL AND / OR ENERGY PROPERTIES |
| JP5233133B2 (en) * | 2007-03-06 | 2013-07-10 | 日産自動車株式会社 | Electrochromic film |
| JP5305137B2 (en) * | 2007-12-05 | 2013-10-02 | 日立金属株式会社 | Ni-W sintered target material for forming Ni alloy intermediate layer of perpendicular magnetic recording medium |
| DE102009025972B4 (en) | 2009-06-15 | 2018-12-27 | Sage Electrochromics, Inc. | Laminated glass pane and its use |
| CN107300819B (en) | 2011-07-21 | 2021-03-12 | Sage电致变色显示有限公司 | Electrochromic nickel oxides simultaneously doped with lithium and metal dopants |
| JP5965258B2 (en) * | 2012-09-10 | 2016-08-03 | 国立大学法人北見工業大学 | Electrochromic device and manufacturing method thereof |
| US8947759B2 (en) * | 2012-10-12 | 2015-02-03 | Sage Electrochromics, Inc. | Partially tinted clear state for improved color and solar-heat gain control of electrochromic devices |
| AT14157U1 (en) | 2013-12-20 | 2015-05-15 | Plansee Se | W-Ni-sputtering target |
| JP7486578B2 (en) | 2019-10-18 | 2024-05-17 | ビトロ フラット グラス エルエルシー | Electrochromic devices and methods of making and operating same |
| FR3140954A1 (en) | 2022-10-13 | 2024-04-19 | Saint-Gobain Glass France | ELECTROCHROMIC GLAZING |
| FR3140955B1 (en) | 2022-10-13 | 2024-10-18 | Saint Gobain | ELECTROCHROME GLAZING |
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| JPH02199429A (en) * | 1988-11-21 | 1990-08-07 | Saint Gobain Vitrage Internatl | Electrochromic assembly |
| JPH0728098A (en) * | 1993-07-14 | 1995-01-31 | Asahi Glass Co Ltd | Method and apparatus for manufacturing electrochromic light control body |
| JPH07321069A (en) * | 1994-05-26 | 1995-12-08 | Nec Corp | Method for manufacturing semiconductor integrated circuit device |
| JPH09152634A (en) * | 1995-03-03 | 1997-06-10 | Canon Inc | Electrochromic device and method of manufacturing the same |
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| JPH10195643A (en) * | 1996-12-26 | 1998-07-28 | Toshiba Corp | Sputter target, sputtering apparatus, semiconductor device and method for manufacturing the same |
| JPH10206902A (en) * | 1996-09-18 | 1998-08-07 | Saint Gobain Vitrage | Electrochemical device and its production |
| JPH10251848A (en) * | 1997-03-17 | 1998-09-22 | Japan Energy Corp | Sputtering target and film forming method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19640515A1 (en) * | 1996-10-01 | 1998-04-09 | Flachglas Ag | Electrochromic mirror and method for producing an electrochromic mirror |
-
1999
- 1999-05-20 FR FR9906408A patent/FR2793888B1/en not_active Expired - Fee Related
-
2000
- 2000-05-19 EP EP00931328A patent/EP1109945A1/en not_active Withdrawn
- 2000-05-19 WO PCT/FR2000/001388 patent/WO2000071777A1/en not_active Ceased
- 2000-05-19 KR KR1020017000771A patent/KR100686611B1/en not_active Expired - Fee Related
- 2000-05-19 JP JP2000620150A patent/JP5005854B2/en not_active Expired - Fee Related
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|---|---|---|---|---|
| JPS5424231A (en) * | 1977-07-25 | 1979-02-23 | Motorola Inc | Method and apparatus for magnetronnsputtering ferro magnetic materials |
| JPH02199429A (en) * | 1988-11-21 | 1990-08-07 | Saint Gobain Vitrage Internatl | Electrochromic assembly |
| JPH0728098A (en) * | 1993-07-14 | 1995-01-31 | Asahi Glass Co Ltd | Method and apparatus for manufacturing electrochromic light control body |
| JPH07321069A (en) * | 1994-05-26 | 1995-12-08 | Nec Corp | Method for manufacturing semiconductor integrated circuit device |
| JPH09152634A (en) * | 1995-03-03 | 1997-06-10 | Canon Inc | Electrochromic device and method of manufacturing the same |
| JPH09249962A (en) * | 1996-03-14 | 1997-09-22 | Toshiba Corp | Method of forming oxide thin film and oxide thin film |
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| JPH10206902A (en) * | 1996-09-18 | 1998-08-07 | Saint Gobain Vitrage | Electrochemical device and its production |
| JPH10195643A (en) * | 1996-12-26 | 1998-07-28 | Toshiba Corp | Sputter target, sputtering apparatus, semiconductor device and method for manufacturing the same |
| JPH10251848A (en) * | 1997-03-17 | 1998-09-22 | Japan Energy Corp | Sputtering target and film forming method |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010070985A (en) | 2001-07-28 |
| FR2793888B1 (en) | 2002-06-28 |
| KR100686611B1 (en) | 2007-02-23 |
| EP1109945A1 (en) | 2001-06-27 |
| FR2793888A1 (en) | 2000-11-24 |
| WO2000071777A1 (en) | 2000-11-30 |
| JP2003500534A (en) | 2003-01-07 |
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