JP5014223B2 - Method for manufacturing solar cell and method for manufacturing solar cell module - Google Patents

Description

  The present invention relates to a method for manufacturing a solar battery cell and a method for manufacturing a solar battery module.

  Conventionally, by depositing a film having a refractive index between the substrate and air on the light incident side of the substrate surface, and changing the refractive index intermittently or continuously from the atmosphere toward the substrate, It is already known that the light reflection (Fresnel reflection) can be reduced. Using this, a film closer to the refractive index of air than the cell surface or module is deposited on the light incident side of the solar cell or module, and the refractive index is continuously or intermittently changed from the substrate to the refractive index of the atmosphere. By changing, light reflection on the surface of the cell or module substrate can be reduced (light reflection prevention effect).

  It is preferable from the viewpoint of the reflectance reduction that the light reflection preventing effect is continuously reduced rather than the refractive index going from the base material to the atmosphere is intermittently reduced. As a method of forming such a film whose refractive index continuously changes, a method of introducing a concavo-convex structure by reactive ion etching (RIE) or chemical etching, or applying aerogel or particles to a substrate together with gas or liquid There is a method of producing a porous film having pore distribution by a technique such as jetting. By introducing such a stepped refractive index structure or an inclined refractive index structure, the reflectance can be reduced and the short-circuit current density of the solar cell can be increased.

  For example, there are Patent Document 1 and Patent Document 2. As a material for such an antireflection film, a silicon nitride film or magnesium fluoride that incorporates an optical interference effect is often used. In these concavo-convex structure or porous film, in order to prevent light scattering and to keep the light transmittance high, it is desirable that the period of the concavo-convex or the hole diameter be smaller than the wavelength of light that can be absorbed by the solar cell. Are known.

Japanese Patent Laid-Open No. 7-326784 JP 2005-249982 A

  However, when applying a porous film made of such a solution or dispersion as a raw material to a solar cell, the inventor of the present application applied the solution or the like on the solar cell substrate when producing an antireflection film. We found that the target characteristics deteriorated. Therefore, the inventor of the present application, as a result of earnest research to investigate the cause, the long-term reliability of the solar cell by the entry of fine particles, dispersion medium, raw material sol, etc. between the electrode and the solar cell substrate, The existence of the problem that the electrical characteristics deteriorate is clarified by the study of the present inventor. Here, the curve factor is a value obtained by dividing the maximum output power of the solar cell by the product of the short-circuit current and the open-circuit voltage. On the other hand, no method has been proposed for preventing the deterioration of electrical characteristics, particularly the deterioration of the fill factor, and the present invention has been reached in order to prevent such deterioration.

  The present invention has been made in view of the above, and reduces short circuit current by reducing light reflection by an antireflection film having a high light reflection reduction effect formed from a liquid phase while preventing deterioration of a fill factor. It aims at obtaining the manufacturing method of the photovoltaic cell which can manufacture the photovoltaic cell which was excellent in the solar cell characteristic which increased, and the manufacturing method of a photovoltaic module.

In order to solve the above-described problems and achieve the object, a method for manufacturing a photovoltaic cell according to the present invention includes a first reflection made of a silicon nitride film on the entire main surface of a semiconductor substrate having a PN junction. A first step of forming an anti-reflection film, a second step of forming an electrode by printing a paste containing aluminum powder or silver on the first anti-reflection film, and covering and sealing the electrode A third step of forming an electrode part protective layer only on the electrode; and a second antireflection having a refractive index lower than the refractive index of the surface of the semiconductor substrate on the semiconductor substrate on which the electrode part protective layer is formed And a fourth step of forming a film by applying a liquid containing a particle having a primary particle diameter of 5 nm to 300 nm and a solvent.

  According to this invention, while preventing deterioration of the fill factor, the short circuit current is increased by reducing the light reflection by the antireflection film having a high light reflection reduction effect formed from the liquid phase, and the solar cell characteristics are excellent. There is an effect that a solar battery cell is obtained.

  EMBODIMENT OF THE INVENTION Below, embodiment of the photovoltaic cell concerning this invention, its manufacturing method, a solar cell module, and its manufacturing method is described in detail based on drawing. In addition, this invention is not limited to the following description, In the range which does not deviate from the summary of this invention, it can change suitably.

Embodiment 1 FIG.
FIG. 1 is a cross-sectional view showing a schematic configuration of the solar battery cell according to the first embodiment of the present invention. The solar cell according to the first embodiment includes a semiconductor substrate 1 that is a solar battery substrate and has a pn junction, and a first antireflection film 2 formed on a surface (front surface) on the light receiving surface side of the semiconductor substrate 1. The back surface electrode 3 formed on the surface (back surface) opposite to the light receiving surface of the semiconductor substrate 1 and the surface (front surface) on the light receiving surface side of the semiconductor substrate 1 are surrounded by the first antireflection film 2. The electrode portion protective layer 5a (hereinafter referred to as electrode portion protection) formed so as to cover the light receiving surface side electrode 4, the first antireflection film 2 and the light receiving surface side electrode 4 and seal the light receiving surface side electrode 4. And a second antireflection film 6 formed on the electrode portion protective layer 5a so as to cover the electrode portion protective layer 5a. As the light-receiving surface side electrode 4, the bus electrode and grid electrode of a photovoltaic cell are included, In FIG. 1, sectional drawing in the cross section perpendicular | vertical to the longitudinal direction of a grid electrode is shown.

  The solar battery cell according to the first embodiment formed as described above includes the second antireflection film 6 formed of the antireflection film material made of the liquid phase, and the antireflection film material made of the liquid phase and the dispersion. The formation of defect levels due to the penetration of the liquid into the semiconductor substrate 1 is prevented, and the sun is excellent in short-circuit current and photoelectric conversion efficiency without reducing the fill factor, which is one of the output electrical characteristics of the solar cell. It is a battery cell.

Below, the manufacturing method of the photovoltaic cell concerning Embodiment 1 comprised as mentioned above is demonstrated with reference to FIGS. 2-1-FIGS. 2-5. FIGS. 2-1 to 2-5 are cross-sectional views for explaining the method for manufacturing the solar battery cell according to the first embodiment. First, a p-type polycrystalline silicon substrate is generated when a silicon substrate is cut out by immersing a p-type polycrystalline silicon substrate having a volume resistivity of 1 to 5 Ω · cm in a heated alkaline solution and etching the surface. Removed damage area near the surface. Then, after the surface is roughened using anisotropic etching with an alkaline solution in this way, the p-type polycrystalline silicon substrate is placed in a phosphorus oxychloride (POCl ₃ ) gas atmosphere at about 800 to 900 ° C. A semiconductor pn junction was formed on the surface of the p-type polycrystalline silicon substrate by heating at.

  Next, this p-type polycrystalline silicon substrate was immersed in an aqueous hydrofluoric acid solution, and the phosphorous glass formed on the surface of the p-type polycrystalline silicon substrate was removed to obtain a semiconductor substrate 1 having a pn junction ( Fig. 2-1). A silicon nitride film was formed on the semiconductor substrate 1 by a plasma enhanced chemical vapor deposition (PECVD) method to obtain a first antireflection film 2 (FIG. 2-2). When the refractive index of this silicon nitride film (first antireflection film 2) was measured by an ellipsometer, it was about 2.3.

Next, a paste containing aluminum powder and silver was printed on the back surface and the light receiving surface of the semiconductor substrate 1, respectively, and then baked to form the back electrode 3 and the light receiving side electrode 4, thereby producing a solar cell ( Fig. 2-3). And the battery is actually operated using the solar battery cell thus produced, and the photovoltaic cell output characteristics include photoelectric conversion efficiency (%), fill factor (%), short circuit current density (mA / cm ² ). The open circuit voltage (V) was measured.

  Next, a methanol solution in which 13 parts by weight of zirconia particles are dispersed (primary particle size of 10 to 12 nanometers) is diluted 100 times with isopropanol to prepare a coating solution in which zirconia particles are aggregated (zirconia fine particle dispersion). Then, this is spray-coated on the silicon nitride film which is the first antireflection film 2 on the light receiving surface side and the light receiving surface side electrode 4, so that the first antireflection film 2 and the light receiving surface side electrode 4 are applied. The electrode part protective layer 5a which is a zirconia particle layer in which zirconia particles are aggregated is formed (FIG. 2-4). By using the spray coating method, film formation at low cost and high speed is possible, which is industrially advantageous. When the refractive index of this electrode part protective layer 5a was measured, it was about 1.6.

  The particle diameter of the zirconia particles used as the electrode part protective layer 5a is preferably a primary particle diameter of 5 nm to 300 nm. This is because, if the particle size is too large, light scattering occurs and light reflection increases, and if the particle size is too small, the particles cause a large aggregation of the secondary particle size and light scattering. This is because light reflection increases due to the occurrence of. At the same time, by using a transparent particle film as the electrode protection layer 5, it can function as an antireflection film for reducing Fresnel reflection by itself and can form an electrode protection film with low stress. The short circuit current of the solar cell can be increased while preventing the reduction of the fill factor due to. In addition, since the refractive index can be controlled by mixing porosity and particles, an optimal refractive index can be selected as the electrode portion protective layer that functions as an antireflection film. A porous layer having a pore diameter of 5 nm to 300 nm formed from a solution or a dispersion can also be used.

The degree of aggregation and the refractive index of the particles used for the electrode part protective layer 5a can be controlled by adding an acid or alkali solution to the particle dispersion used for forming the protective layer. On the electrode part protective layer 5a formed in this manner, a magnesium fluoride particle layer was formed as a second antireflection film 6 made of particles (FIG. 2-5), and a solar battery cell was produced ( Sample 1). The magnesium fluoride particle layer was formed by applying magnesium fluoride (MgF ₂ ) particles on the electrode part protective layer 5a to a thickness of about 100 nanometers by spin coating. The refractive index of this magnesium fluoride particle layer was measured and found to be about 1.2.

  The particle size of the particles used as the second antireflection film 6 is preferably 5 to 300 nanometers. This is because if the particle size of the particles becomes too large, light scattering occurs and light reflection increases, and if the particle size is too small, the particles aggregate and cause light scattering. This is because of the increase.

Using the solar cell of Sample 1 in which the second antireflection film 6 made of such magnesium fluoride particles was formed, the battery was actually operated, and the photoelectric conversion efficiency (%), curve, and solar cell output characteristics Factor (%), short-circuit current density (mA / cm ² ), and open circuit voltage (V) were measured. And the difference with the solar cell output characteristic of the photovoltaic cell before apply | coating the above-mentioned electrode part protective layer 5a and the 2nd antireflection film 6 is calculated | required, and the electrode part protective layer 5a and the 2nd antireflection film 6 are obtained. The effect on solar cell output characteristics was evaluated. Table 1 shows the difference in solar cell output characteristics before and after the formation of the electrode part protective layer a5 and the second antireflection film 6.

Further, as a solar cell of Sample 2, a solar cell was produced in the same manner as above except that 1 part by volume of hydrofluoric acid was added to the coating solution for forming the electrode part protective layer 5a. Thereby, the solar cell of Sample 2 having the electrode part protective layer 5a ′ containing hydrofluoric acid as the electrode part protective layer 5a and the second antireflection film 6 was obtained. In addition, before applying and forming the electrode portion protective layer (containing hydrofluoric acid) 5a ′ and the second antireflection film 6, as the solar cell output characteristics, photoelectric conversion efficiency (%), curve factor (%), Short-circuit current density (mA / cm ² ) and open circuit voltage (V) were measured.

Further, for the solar cell of Sample 2 provided with the electrode portion protective layer (containing hydrofluoric acid) 5a ′ made of such zirconia particles and the second antireflection film 6 made of magnesium fluoride particles, the electrode portion protection was performed. As solar cell output characteristics after coating and forming the layer (containing hydrofluoric acid) 5a ′ and the second antireflection film 6, photoelectric conversion efficiency (%), fill factor (%), short-circuit current density (mA / cm ² ) and open circuit voltage (V). Then, the difference in solar cell output characteristics before and after the electrode part protective layer (hydrofluoric acid-containing) 5a ′ and the second antireflection film 6 are formed by coating is obtained, and the electrode part protective layer (hydrofluoric acid-containing) 5a is obtained. 'And the influence of the second antireflection film 6 on the solar cell output characteristics was evaluated. Table 1 shows the difference in solar cell output characteristics before and after the formation of the electrode portion protective layer (containing hydrofluoric acid) 5a ′ and the second antireflection film 6.

Moreover, as a solar cell of sample 3 which is a comparative sample, an electrode part protective layer 5a is provided by a method except for the step of applying and forming electrode part protective layer 5a in the method for manufacturing the solar battery cell of sample 1 described above. First, a solar battery cell provided with the second antireflection film 6 was produced. In addition, before coating and forming the second antireflection film 6, as solar cell output characteristics, photoelectric conversion efficiency (%), fill factor (%), short-circuit current density (mA / cm ² ), open circuit voltage (V) Was measured.

Moreover, about the photovoltaic cell of the sample 3 provided with the 2nd antireflection film 6 without providing such an electrode part protective layer 5a, as a solar cell output characteristic after apply | coating and forming the 2nd antireflection film 6 , Photoelectric conversion efficiency (%), fill factor (%), short circuit current density (mA / cm ² ), and open circuit voltage (V) were measured. And the difference of the solar cell output characteristic before and after apply | coating formation of the 2nd antireflection film 6 was calculated | required, and the influence on the solar cell output characteristic of the 2nd antireflection film 6 was evaluated. The difference in solar cell output characteristics before and after the formation of the second antireflection film 6 is shown in Table 1.

  As can be seen from Table 1, in the solar cells of Sample 1, Sample 2, and Sample 3, the first antireflection film 2 and the second antireflection film are used regardless of the presence or absence of the electrode protection layers 5a and 5a ′. By forming 6, the short circuit current density was improved. On the other hand, in the solar cell of Sample 3 that does not include the zirconia particle layer as the electrode part protective layer 5a, it has been found for the first time that the fill factor is reduced by applying the second antireflection film 6. . This is because the fine particles and the solvent constituting the raw material of the antireflection film at the conduction part between the light receiving side electrode 4 and the solar cell base material (semiconductor substrate 1) where the silicon antinitride film as the first antireflection film 2 does not exist. This is because the dispersion medium reaches the solar cell base material (semiconductor substrate 1) and forms a defect rank in the solar cell base material (semiconductor substrate 1).

  Therefore, it is considered that the deterioration of the curve factor can be prevented by forming the electrode part protective layers 5a and a 'that do not allow the passage of the fine particles and the solvent in the light receiving side electrode 4 part. Actually, in the solar cell of Sample 1 in which a zirconia particle layer was introduced as the electrode part protective layer 5a, the fill factor was not decreased by application of the antireflection film, and only the short-circuit current density was increased. It was possible to improve the solar battery cell.

  Here, the agglomerated zirconia particles have a sufficiently large secondary particle size, so that they do not enter the solar cell base material (semiconductor substrate 1) and function as the electrode protective layers 5, 5a ′ without causing deterioration of the fill factor. ing. By using a particle layer as the electrode protective layers 5 and 5a ′, no stress is generated at the interface between the solar cell substrate (semiconductor substrate 1) and the electrode protective layers 5 and 5a ′, and a curve factor as compared with a uniform continuous film. There is an advantage that it is difficult to cause a decrease in the above. In addition, since the film can be formed at room temperature, it is possible to prevent the generation of stress due to the difference in temperature change and the expansion coefficient of the material. In this way, by using zirconia aggregated particles as the electrode part protective layers 5 and 5a ′, the electrode protective films 5 and 5a ′ having a low stress due to temperature changes during film formation and differences in the expansion coefficients of the films are formed. It is possible to prevent a decrease in the fill factor due to the formation of the electrode protective films 5 and 5a ′.

  Furthermore, since the refractive index of the zirconia particle layer is about 1.6 and has a refractive index between magnesium fluoride and the silicon nitride film, the zirconia particle layer is the electrode protective layer 5, 5a ′. At the same time, it also functions as an antireflection film for reducing Fresnel reflection, and the increase in short-circuit current density before and after the application of the second antireflection film 6 was increased as compared with the solar cell of sample 3 (sample 1). From this, it can be seen that the electrode protective layer alone functions as an antireflection film capable of increasing the short-circuit current without reducing the fill factor. And since the refractive index of electrode part protective layer 5, 5a 'can be controlled by mixing a porosity and particle | grains, the optimal refractive index can be selected as an electrode part protective layer which also functions as an antireflection film. Further, as can be seen from Table 1, it was found that the fill factor was further improved by adding hydrofluoric acid to the coating solution for forming the electrode protective layer (Sample 2).

  According to the manufacturing method of the solar battery cell according to the first embodiment as described above, the electrode part protective layer 5a or the electrode part protective layer (hydrofluoric acid-containing) 5a ′ formed of the zirconia particle layer which is an inorganic fine particle layer is provided. By forming on the light-receiving-side electrode 4 and sealing the light-receiving-side electrode 4, the anti-reflection film material or dispersion liquid in the liquid phase is produced in the subsequent process of manufacturing the solar battery cell so that the light-receiving-side electrode 4 and the semiconductor substrate Thus, a coating type antireflection film can be formed by preventing the formation of defect levels in the semiconductor substrate 1 due to penetration and penetration with respect to the semiconductor substrate 1. Thereby, in the comparison before and after the application of the second antireflection film 6, the short circuit current density and the photoelectric conversion efficiency can be improved without reducing the fill factor which is one of the output electric characteristics of the solar cell. A solar cell having a solar cell characteristic with an increased short circuit current by reducing light reflection while preventing deterioration of the solar cell characteristic, particularly deterioration of the fill factor, is produced. can do.

  In the above description, the case where a polycrystalline silicon substrate is used as an example of the solar cell substrate is described. However, the solar cell substrate is not limited to this, and single crystal silicon, gallium arsenide (GaAs), indium phosphide ( InP) or the like may be used as a substrate, and the antireflection film may be not only a single layer but also a multilayer structure in which different materials are stacked. In addition, as a method for applying the liquid phase to the solar battery cell, application with a brush or the like may be used.

  Moreover, in the above, although the case where the zirconia particle layer which the zirconia particle aggregated was used as an example of electrode part protective layer 5, 5a 'was demonstrated, the particle | grains used for electrode part protective layer 5, 5a' are limited to this. In addition to zirconia, titania, silicon oxide, indium oxide, tungsten oxide, magnesium oxide, yttrium oxide, tin oxide, antimony pentoxide, cesium oxide, barium titanate, strontium titanate, aluminum oxide, zinc oxide, Aggregates of fine particles of silicon carbide, magnesium fluoride, zinc sulfide, selenium sulfide, gallium nitride, aluminum nitride, and boron nitride, or a mixture of any combination of these fine particles can be used. By using such inorganic particles as the particles of the electrode portion protective layers 5 and 5a ', an electrode portion protective layer having high transparency can be formed, and the short circuit current can be improved.

Embodiment 2. FIG.
In the second embodiment, a sample is obtained in the same manner as the solar cell of the sample 1 of the first embodiment, except that an electrode portion protective layer (amorphous titania) 5b made of an amorphous titania layer is formed as the electrode portion protective layer 5. 4 solar cells were produced. In addition, since the structure of the photovoltaic cell of the sample 4 is the same as that of the sample 1, detailed description is abbreviate | omitted.

  The amorphous titania layer as the electrode part protective layer 5b is formed by forming 4 parts by weight of a peroxy titanic acid solution instead of the zirconia fine particle dispersion as a precursor solution of the electrode part protective layer 5b after the back electrode 3 and the light receiving surface side electrode 4 are formed. Is diluted 5 times with isopropanol, sprayed onto the silicon nitride film, which is the first antireflection film 2 on the light-receiving surface side, and the light-receiving surface side electrode 4, and the solar cells are placed at 100 degrees on the hot plate. Formed by heating for 5 minutes.

In the solar cell of sample 4, as in the solar cell of sample 1, after the back electrode 3 and the light receiving side electrode 4 are formed, before the electrode portion protective layer 5b is formed, the solar cell output characteristics are Conversion efficiency (%), fill factor (%), short-circuit current density (mA / cm ² ), and open circuit voltage (V) were measured.

Moreover, about the solar cell of the sample 4 provided with the electrode part protective layer 5b of such an amorphous titania layer, it is as a solar cell output characteristic after apply | coating and forming the electrode part protective layer 5b and the 2nd antireflection film 6. The photoelectric conversion efficiency (%), the fill factor (%), the short-circuit current density (mA / cm ² ), and the open circuit voltage (V) were measured in the same manner as the solar cell of Sample 1.

  And the difference of the solar cell output characteristic of the photovoltaic cell before and after apply | coating formation of the above-mentioned electrode part protective layer 5b and the 2nd antireflection film 6 is calculated | required, and the electrode part protective layer 5b and the 2nd antireflection film 6 are obtained. The effect on solar cell output characteristics was evaluated. Table 2 shows the difference in solar cell output characteristics before and after the formation of the electrode portion protective layer 5b and the second antireflection film 6. As a comparative sample, Table 2 shows the difference in solar cell output characteristics before and after the formation of the second antireflection film 6 in the solar cell of Sample 3 produced in the first embodiment.

  As can be seen from Table 2, in the solar cell of Sample 4 in which an amorphous titania layer is formed as the electrode part protective layer 5b, the fill factor is not lowered by applying the second antireflection film 6, and the short circuit current density is reduced. Only an increase occurred, and it was possible to improve the solar cell of Sample 3 which is a comparative sample of solar cell characteristics.

  Furthermore, since the amorphous titania used this time has a refractive index of about 1.8 and has a refractive index between magnesium fluoride and the silicon nitride film, the amorphous titania layer is the electrode protective layer 5b at the same time. It also functions as an antireflection film for reducing Fresnel reflection, and the increase in the short-circuit current density before and after the formation of the second antireflection film 6 was larger than that of the solar cell of Sample 3. Furthermore, since the amorphous titania layer is higher in transparency than the zirconia particle layer in which the zirconia particles as the electrode portion protective layer 5a in the sample 1 are aggregated, as the solar cell output characteristics after the formation of the second antireflection film 6 In addition, it was possible to obtain a larger short-circuit current density than when the aggregate of zirconia particles was used as the electrode part protective layer 5.

  According to the method for manufacturing a photovoltaic cell according to the second embodiment as described above, the electrode portion protective layer 5b made of an amorphous titania layer is formed on the light receiving side electrode 4 to seal the light receiving surface side electrode 4. Due to the above, defects in the semiconductor substrate 1 caused by penetration and penetration of the antireflection film material or dispersion liquid in the liquid phase between the light receiving surface side electrode 4 and the semiconductor substrate 1 in the subsequent manufacturing process of the solar battery cell A coating-type antireflection film can be formed while preventing the formation of levels. By using an amorphous substance for the electrode part protective layer 5, it is possible to form an electrode part protective layer that is denser and has no increase in reflectance due to light scattering, and the short-circuit current can be improved. In addition, since the refractive index can be controlled by the density of the film, an optimum refractive index can be selected as the electrode part protective layer that functions as an antireflection film. Thereby, in the comparison before and after the coating formation of the second antireflection film 6, the short circuit current density and the photoelectric conversion efficiency are improved without reducing the fill factor which is one of the output electric characteristics of the solar cell. The solar cell has an unprecedented remarkable effect that it can be used, and has a solar cell characteristic with an increased short-circuit current by reducing light reflection while preventing deterioration of the solar cell characteristic, particularly deterioration of the fill factor. A cell can be made.

  In the above description, the case where amorphous titania is used as an example of the electrode part protective layer 5 made of amorphous is described. However, the amorphous substance used for the electrode part protective layer 5 is not limited to this, and zirconia, titania, Silicon oxide, indium oxide, tungsten oxide, magnesium oxide, yttrium oxide, tin oxide, antimony pentoxide, cesium oxide, barium titanate, strontium titanate, aluminum oxide, zinc oxide, silicon carbide, magnesium fluoride, zinc sulfide, sulfide One kind of amorphous film selected from the group consisting of selenium, gallium nitride, aluminum nitride and boron nitride, or two or more kinds of amorphous composite films selected from the above group can be used.

  Since the refractive index can be controlled by mixing these materials, an optimal refractive index can be selected as the electrode portion protective layer 5 that functions as an antireflection film. In addition, a film made of only each material or a mixed film of each material is laminated so that the refractive index approaches the refractive index of the solar cell surface from the refractive index of the environment around the solar cell as the refractive index goes to the solar cell side. By forming the laminated film, an electrode part protective layer that functions as an antireflection film can be formed.

Embodiment 3 FIG.
FIG. 3 is a cross-sectional view illustrating a schematic configuration of the solar battery cell of Sample 5 according to the third embodiment. In Embodiment 3, the solar cell of Sample 5 is produced in the same manner as the solar cell of Sample 1 except that the electrode portion protective layer 5c made of an ethylene vinyl acetate resin layer is formed as the electrode portion protective layer 5. did. In FIG. 3, members that are the same as those in Sample 1 are given the same reference numerals as in Sample 1 (FIG. 1), and detailed descriptions thereof are omitted.

  The ethylene vinyl acetate resin layer as the electrode protection layer 5c is formed by forming an ethylene vinyl acetate resin having a thickness of about 200 micrometers on the light receiving side electrode 4 instead of the zirconia fine particle layer after the back electrode 3 and the light receiving surface side electrode 4 are formed. The solar battery cells were placed on a hot plate and heated at 100 degrees for 10 minutes to soften them. Further, as shown in FIG. 3, the ethylene vinyl acetate resin layer was formed only on the light receiving surface side electrode 4 so as to cover the light receiving surface side electrode 4 and seal the light receiving surface side electrode 4.

In the solar cell of sample 5, as in the solar cell of sample 1, after the back electrode 3 and the light receiving side electrode 4 are formed, before the electrode portion protective layer 5c is formed, the solar cell output characteristics are Conversion efficiency (%), fill factor (%), short-circuit current density (mA / cm ² ), and open circuit voltage (V) were measured.

Moreover, about the photovoltaic cell of the sample 5 provided with the electrode part protective layer 5c of such an ethylene vinyl acetate resin layer, the solar cell output after apply | coating and forming the electrode part protective layer 5c and the 2nd antireflection film 6 As characteristics, photoelectric conversion efficiency (%), fill factor (%), short-circuit current density (mA / cm ² ), and open-circuit voltage (V) were measured in the same manner as the solar cell of Sample 1.

  And the difference of the solar cell output characteristic of the photovoltaic cell before and after apply | coating formation of the above-mentioned electrode part protective layer 5c and the 2nd antireflection film 6 is calculated | required, and the electrode part protective layer 5c and the 2nd antireflection film 6 are calculated | required. The effect on solar cell output characteristics was evaluated. Table 3 shows the difference in solar cell output characteristics before and after the formation of the electrode portion protective layer 5c and the second antireflection film 6. As a comparative sample, Table 3 shows the difference in solar cell output characteristics before and after the formation of the second antireflection film 6 in the solar cell of Sample 3 produced in the first embodiment.

  As can be seen from Table 3, in the solar cell of Sample 5 in which the ethylene vinyl acetate resin layer was formed as the electrode portion protective layer 5c, the fill factor was not lowered by applying the second antireflection film 6, and the short circuit current was reduced. Only an increase in density occurred, and the solar cell of Sample 3 which is a comparative sample of solar cell characteristics could be improved.

  According to the method for manufacturing a photovoltaic cell according to the third embodiment as described above, the electrode portion protective layer 5c made of an ethylene vinyl acetate resin layer is formed on the light receiving side electrode 4, and the light receiving surface side electrode 4 is sealed. As a result, in the subsequent manufacturing process of the solar battery cell, the antireflection film material or dispersion liquid consisting of the liquid phase enters and penetrates between the light receiving surface side electrode 4 and the semiconductor substrate 1 and enters the semiconductor substrate 1. It is possible to form a coating type antireflection film while preventing the formation of defect levels in the film. Moreover, by using resin for the electrode protective layer 5, the electrode part protective layer 5 with high adhesiveness can be formed, and reliability can be improved. Thereby, in the comparison before and after the coating formation of the second antireflection film 6, the short circuit current density and the photoelectric conversion efficiency are improved without reducing the fill factor which is one of the output electric characteristics of the solar cell. The solar cell has an unprecedented remarkable effect that it can be used, and has a solar cell characteristic with an increased short-circuit current by reducing light reflection while preventing deterioration of the solar cell characteristic, particularly deterioration of the fill factor. A cell can be made.

  When the electrode part protective layer 5 is formed of resin, it is necessary to select a resin having a small shrinkage so as not to apply stress to the semiconductor substrate 1 during curing, and to produce a sufficiently thin resin layer. .

Embodiment 4 FIG.
In the fourth embodiment, the solar cell of sample 6 is the same as the solar cell of sample 1 except that the electrode portion protective layer 5d made of a silicone oil film that is a high boiling point solvent is formed as the electrode portion protective layer 5. A battery cell was produced. In addition, since the structure of the photovoltaic cell of the sample 6 is the same as that of the sample 1, detailed description is abbreviate | omitted.

  The film of silicone oil as the electrode portion protective layer 5d is formed by forming silicone oil (trade name: KF-99, Shin-Etsu Chemical Co., Ltd., refractive index: 1. 396) was applied to the light-receiving surface side of the semiconductor substrate 1 by spin coating.

In the solar cell of sample 6, as in the solar cell of sample 1, after forming the back electrode 3 and the light-receiving side electrode 4 and before forming the electrode part protective layer 5d, the photovoltaic cell output characteristics are Conversion efficiency (%), fill factor (%), short-circuit current density (mA / cm ² ), and open circuit voltage (V) were measured.

Moreover, about the solar cell of the sample 6 provided with the film | membrane of silicone oil as the electrode part protective layer 5d, as a solar cell output characteristic after apply | coating and forming the electrode part protective layer 5d and the 2nd antireflection film 6, a sample The photoelectric conversion efficiency (%), the fill factor (%), the short circuit current density (mA / cm ² ), and the open circuit voltage (V) were measured in the same manner as in the solar cell 1 of FIG.

  And the difference of the solar cell output characteristic of the photovoltaic cell before and after apply | coating formation of the above-mentioned electrode part protective layer 5d and the 2nd antireflection film 6 is calculated | required, and the electrode part protective layer 5d and the 2nd antireflection film 6 are obtained. The effect on solar cell output characteristics was evaluated. Table 4 shows the difference in solar cell output characteristics before and after the formation of the electrode protection layer 5d and the second antireflection film 6. As a comparative sample, Table 4 shows the difference in solar cell output characteristics before and after the formation of the second antireflection film 6 in the solar cell of Sample 3 produced in the first embodiment.

  As can be seen from Table 4, in the solar cell of Sample 6 in which a silicone oil film is formed as the electrode part protective layer 5d, the fill factor does not decrease by applying the second antireflection film 6, and the short circuit current density Only the increase of this occurred, and it was possible to improve the solar cell of Sample 3 which is a comparative sample of solar cell characteristics.

  According to the method for manufacturing a solar battery cell according to the fourth embodiment as described above, the electrode portion protective layer 5d made of a silicone oil film that is a high-boiling solvent is formed on the light-receiving side electrode 4 to receive the light-receiving surface-side electrode. By sealing 4, the liquid crystal antireflection film material or dispersion liquid penetrates between the light receiving surface side electrode 4 and the semiconductor substrate 1 and penetrates in the subsequent manufacturing process of the solar battery cell. A coating-type antireflection film can be formed by preventing the formation of defect levels in the semiconductor substrate 1. Moreover, by using a high boiling point solvent for the electrode protective layer 5, the electrode part protective layer 5 with high adhesion can be formed, and the reliability can be improved. Thereby, in the comparison before and after the coating formation of the second antireflection film 6, the short circuit current density and the photoelectric conversion efficiency are improved without reducing the fill factor which is one of the output electric characteristics of the solar cell. The solar cell has an unprecedented remarkable effect that it can be used, and has a solar cell characteristic with an increased short-circuit current by reducing light reflection while preventing deterioration of the solar cell characteristic, particularly deterioration of the fill factor. A cell can be made.

Embodiment 5 FIG.
FIG. 4 is a cross-sectional view illustrating a schematic configuration of a solar battery cell of Sample 7 according to the fifth embodiment. The solar cell of the sample 7 includes a semiconductor substrate 1, a first antireflection film 2, a back electrode 3, a light receiving surface side electrode 4, and a second reflection formed on the first antireflection film 2. And a prevention film 6. In FIG. 4, members that are the same as those in Sample 1 are given the same reference numerals as in Sample 1 (FIG. 1), and detailed descriptions thereof are omitted.

  The solar cell according to the fifth embodiment formed as described above includes the second antireflection film 6 formed from the antireflection film material made of the liquid phase, and the antireflection film material made of the liquid phase and the dispersion. The formation of defect levels due to the penetration of the liquid into the semiconductor substrate 1 is prevented, and the sun is excellent in short-circuit current and photoelectric conversion efficiency without reducing the fill factor, which is one of the output electrical characteristics of the solar cell. It is a battery cell.

Next, a method for manufacturing a solar battery cell according to the fifth embodiment configured as described above will be described with reference to FIGS. 5A to 5C are cross-sectional views for explaining the method for manufacturing the solar battery cell according to the fifth embodiment. First, a p-type polycrystalline silicon substrate is generated when a silicon substrate is cut out by immersing a p-type polycrystalline silicon substrate having a volume resistivity of 1 to 5 Ω · cm in a heated alkaline solution and etching the surface. Removed damage area near the surface. Then, after the surface is roughened using anisotropic etching with an alkaline solution in this way, the p-type polycrystalline silicon substrate is placed in a phosphorus oxychloride (POCl ₃ ) gas atmosphere at about 800 to 900 ° C. A semiconductor pn junction was formed on the surface of the p-type polycrystalline silicon substrate by heating at.

  Next, this p-type polycrystalline silicon substrate was immersed in a hydrofluoric acid aqueous solution, and the phosphorous glass formed on the surface of the p-type polycrystalline silicon substrate was removed to obtain a semiconductor substrate 1 having a pn junction. A silicon nitride film was formed on the semiconductor substrate 1 by a plasma enhanced chemical vapor deposition (PECVD) method to obtain a first antireflection film 2. When the refractive index of this silicon nitride film (first antireflection film 2) was measured by an ellipsometer, it was about 2.3.

Next, a paste containing aluminum powder and silver was printed on the back surface and the light receiving surface of the semiconductor substrate 1, respectively, and then baked to form the back electrode 3 and the light receiving side electrode 4, thereby producing a solar cell ( Fig. 5-1). And the battery is actually operated using the solar battery cell thus produced, and the photovoltaic cell output characteristics include photoelectric conversion efficiency (%), fill factor (%), short circuit current density (mA / cm ² ). The open circuit voltage (V) was measured. The process up to here is the same as the method for manufacturing the solar battery cell of Sample 1.

  Next, the light-receiving surface side electrode 4 part of the produced photovoltaic cell was covered and protected with a masking tape as the electrode portion protective layer 5e, and the light-receiving surface side electrode 4 was sealed (FIG. 5-2). Then, 2 parts by weight of the titanium dioxide fine particle dispersion is diluted 10 times with water and sprayed as a second antireflection film on the silicon nitrided film which is the first antireflection film 2 on the light receiving surface side. Spray coating was performed by the method.

  Next, the isopropanol solution in which the zirconia particles are dispersed is spray-coated on the titanium dioxide fine particle layer prepared above by a spray method, and about 40 nanometers of zirconia is formed on the titanium dioxide fine particle layer as a second antireflection film. A particle layer was formed.

  Then, a solution in which the zirconia dispersion and magnesium fluoride are mixed at a volume ratio of 1: 2 is spray-applied on the solar battery cell by a spray method, and zirconia and zirconia are formed on the laminate of the titanium dioxide fine particle layer and the zirconia particle layer. A mixed layer with magnesium fluoride was formed. When the refractive index of the mixed layer of zirconia and magnesium fluoride was measured, the refractive index was about 1.4.

  Further, an isopropanol solution in which magnesium fluoride is dispersed is spray-applied on a solar battery cell by a spray method, and magnesium fluoride is deposited on a laminate of a titanium dioxide fine particle layer, a zirconia particle layer, and a mixed layer of zirconia and magnesium fluoride. A particle layer was formed. As a result, a second antireflection film 6 in which the titanium dioxide fine particle layer, the zirconia particle layer, the mixed layer of zirconia and magnesium fluoride, and the magnesium fluoride particle layer were laminated was obtained. By using the spray coating method for forming the second antireflection film 6, it is possible to form a film at low cost and at high speed, which is industrially advantageous.

After the formation of the second antireflection film 6, the masking tape, which is the electrode portion protective layer 5e attached to the light receiving surface side electrode 4 portion, was peeled off to obtain a solar cell of Sample 7 (FIG. 5-3). As for the solar cell output characteristics after coating and forming the second antireflection film 6 on the solar cell of sample 7, photoelectric conversion efficiency (%), fill factor (%), short circuit similarly to the solar cell of sample 1 The current density (mA / cm ² ) and the open circuit voltage (V) were measured.

  And the difference of the solar cell output characteristic of the photovoltaic cell before and after apply | coating formation of the above-mentioned 2nd antireflection film 6 is calculated | required, and the solar cell output characteristic of the electrode part protective layer 5e and the 2nd antireflection film 6 is calculated | required. The impact was evaluated. Table 5 shows the difference in solar cell output characteristics before and after the formation of the electrode portion protective layer 5e and the second antireflection film 6.

Further, as a comparative sample, the second antireflection film 6 was applied and formed in the same manner as described above except that the masking tape as the electrode portion protective layer 5e for protecting the light receiving surface side electrode 4 was not applied. A solar battery cell was produced. In addition, before coating and forming the second antireflection film 6, as solar cell output characteristics, photoelectric conversion efficiency (%), fill factor (%), short-circuit current density (mA / cm ² ), open circuit voltage (V) Was measured.

Moreover, about the photovoltaic cell of the sample 8, as a solar cell output characteristic after apply | coating and forming the 2nd antireflection film 6, photoelectric conversion efficiency (%), fill factor (%), short circuit current density (mA / cm < ² >). ) And the open circuit voltage (V) was measured. And the difference of the solar cell output characteristic before and after apply | coating formation of the 2nd antireflection film 6 was calculated | required, and the influence on the solar cell output characteristic of the 2nd antireflection film 6 was evaluated. Table 5 shows the difference in solar cell output characteristics before and after the formation of the second antireflection film 6.

  As can be seen from Table 5, in the solar cell of sample 7 in which the light-receiving surface side electrode 4 is protected by the masking tape as the electrode portion protective layer 5e before the second antireflection film 6 is applied, the second reflection is performed. By applying the prevention film 6, the fill factor did not decrease, only an increase in the short circuit current density occurred, and the solar cell of Sample 8 which is a comparative sample of solar cell characteristics could be improved.

  According to the method for manufacturing a photovoltaic cell according to the fifth embodiment as described above, by forming the electrode portion protective layer 5d made of masking tape on the light receiving side electrode 4 and sealing the light receiving surface side electrode 4 Then, in the subsequent manufacturing process of the solar battery cell, the defect state in the semiconductor substrate 1 caused by the penetration or penetration of the antireflection film material or dispersion liquid consisting of the liquid phase between the light receiving surface side electrode 4 and the semiconductor substrate 1 The coating-type antireflection film can be formed while preventing the formation of the positions. Thereby, in the comparison before and after the coating formation of the second antireflection film 6, the short circuit current density and the photoelectric conversion efficiency are improved without reducing the fill factor which is one of the output electric characteristics of the solar cell. A solar cell having a solar cell characteristic cell with an increased short-circuit current by reducing light reflection while preventing deterioration of solar cell characteristics, in particular, deterioration of fill factor A battery can be fabricated.

Embodiment 6 FIG.
FIG. 6 is a diagram illustrating a schematic configuration of a solar cell module of Sample 9 according to the sixth embodiment. The solar cell module of Sample 9 includes a semiconductor substrate 1, a first antireflection film 2, a back electrode 3, a light receiving surface side electrode 4, and a second reflection formed on the first antireflection film 2. A prevention film 6, a sealing material 7, a transparent substrate 8, and a protective substrate 9 are provided. In FIG. 6, members that are the same as those in Sample 1 are given the same reference numerals as in Sample 1 (FIG. 1), and detailed descriptions thereof are omitted.

  The solar cell module according to the sixth embodiment formed as described above includes the second antireflection film 6 formed from the antireflection film material made of the liquid phase, and the antireflection film material made of the liquid phase and the dispersion. The formation of defect levels due to the penetration of the liquid into the semiconductor substrate 1 is prevented, and the sun is excellent in short-circuit current and photoelectric conversion efficiency without reducing the fill factor, which is one of the output electrical characteristics of the solar cell. It is a battery module.

Next, a method for manufacturing a solar battery cell according to the sixth embodiment configured as described above will be described with reference to FIGS. First, a p-type polycrystalline silicon substrate is generated when a silicon substrate is cut out by immersing a p-type polycrystalline silicon substrate having a volume resistivity of 1 to 5 Ω · cm in a heated alkaline solution and etching the surface. Removed damage area near the surface. Then, after the surface is roughened using anisotropic etching with an alkaline solution in this way, the p-type polycrystalline silicon substrate is placed in a phosphorus oxychloride (POCl ₃ ) gas atmosphere at about 800 to 900 ° C. A semiconductor pn junction was formed on the surface of the p-type polycrystalline silicon substrate by heating at.

  Next, this p-type polycrystalline silicon substrate was immersed in a hydrofluoric acid aqueous solution, and the phosphorous glass formed on the surface of the p-type polycrystalline silicon substrate was removed to obtain a semiconductor substrate 1 having a pn junction. A silicon nitride film was formed on the semiconductor substrate 1 by a plasma enhanced chemical vapor deposition (PECVD) method to obtain a first antireflection film 2. When the refractive index of this silicon nitride film (first antireflection film 2) was measured by an ellipsometer, it was about 2.3.

  Next, a paste containing aluminum powder and silver was printed on the back surface and the light receiving surface of the semiconductor substrate 1, respectively, and then baked to form the back electrode 3 and the light receiving side electrode 4, thereby producing a solar cell ( Fig. 7-1).

  Next, the light receiving surface side electrode 4 portion of the produced solar battery cell was covered and protected with a masking tape as the electrode portion protective layer 5e, and the light receiving surface side electrode 4 was sealed (FIG. 7-2). Then, 2 parts by weight of the titanium dioxide fine particle dispersion is diluted 10 times with water and sprayed as a second antireflection film on the silicon nitrided film which is the first antireflection film 2 on the light receiving surface side. Spray coating was performed by the method.

  Next, the isopropanol solution in which the zirconia particles are dispersed is spray-coated on the titanium dioxide fine particle layer prepared above by a spray method, and about 40 nanometers of zirconia is formed on the titanium dioxide fine particle layer as a second antireflection film. A particle layer was formed. Up to this point, the method is the same as the method for manufacturing the solar cell of Sample 7.

  Thereby, the 2nd antireflection film 6 which is a coating type antireflection film formed by laminating a titanium dioxide fine particle layer and a zirconia particle layer was obtained.

  After the formation of the second antireflection film 6, the masking tape that is the electrode portion protective layer 5 e attached to the light receiving surface side electrode 4 is peeled off, and the sealing material is formed on the surface on which the second antireflection film 6 is formed. 7 is laminated in this order with a glass substrate as a transparent substrate 8 and a polyethylene terephthalate resin as a protective substrate 9 and an ethylene vinyl acetate resin film as a sealing material 7 on the back side. The solar cell module of Sample 9 was produced by stacking and arranging in this order and heating at 100 to 200 ° C. under vacuum while applying pressure from both the front and back surfaces (FIG. 7-3).

With respect to the solar cell module of Sample 9 thus manufactured, as the solar cell output characteristics, as in the solar cell of Sample 1, photoelectric conversion efficiency (%), fill factor (%), short-circuit current density (mA / cm ^2). ) And the open circuit voltage (V) was measured.

Further, as a comparative sample, a solar cell module of Sample 10 was produced in the same manner as Sample 9 except that the second antireflection film 6 formed by laminating the titanium dioxide fine particle layer and the zirconia particle layer was not formed. For the solar cell of Sample 8, photoelectric conversion efficiency (%), fill factor (%), short-circuit current density (mA / cm ² ), and open circuit voltage (V) were measured as solar cell output characteristics. The difference in solar cell characteristics between sample 10 and sample 9 is shown in Table 6.

  As can be seen from Table 6, the solar cell module of Sample 9 in which the light-receiving surface side electrode 4 is protected by the masking tape as the electrode portion protective layer 5e and the second antireflection film 6 which is a coating type antireflection film is applied and formed. Then, compared with the solar cell module of sample 10, the second antireflection film 6 is applied, so that the fill factor does not decrease, only an increase in the short-circuit current density occurs, and the solar cell module of sample 10 is improved. I was able to.

  According to the method for manufacturing a solar cell module according to Embodiment 6 as described above, when forming the second antireflection film 6 which is a coating type antireflection film, the electrode portion protective layer 5e made of a masking tape is formed. Since it is formed on the light receiving side electrode 4 and seals the light receiving surface side electrode 4, the antireflection film material or dispersion liquid consisting of the liquid phase is applied to the light receiving surface side electrode 4 and the semiconductor substrate 1 in the subsequent manufacturing process of the solar cell module. It is possible to form a coating-type antireflection film by preventing the formation of defect levels in the semiconductor substrate 1 due to penetration and penetration between the two. Thereby, in comparison with the solar cell module which does not form the second antireflection film 6 which is a coating type antireflection film, a short circuit is achieved without substantially reducing the fill factor which is one of the output electric characteristics of the solar cell. It has an unprecedented remarkable effect that current density and photoelectric conversion efficiency can be improved, and short-circuit current by reducing light reflection while preventing deterioration of solar cell characteristics, particularly deterioration of curve factor. A solar cell module having increased solar cell characteristics can be produced.

  In the first to sixth embodiments described above, the second antireflection film 6 includes zirconia, titania, silicon oxide, indium oxide, tungsten oxide, magnesium oxide, yttrium oxide, tin oxide, and antimony pentoxide. A kind of particles selected from the group consisting of cesium oxide, barium titanate, strontium titanate, aluminum oxide, zinc oxide, silicon carbide, magnesium fluoride, zinc sulfide, selenium sulfide, gallium nitride, aluminum nitride and boron nitride A first film comprising particles having a particle diameter of 5 to 300 nm, or a second film comprising a mixture of two or more kinds of particles selected from the above group and having a particle diameter of 5 to 300 nm Alternatively, a stacked film of the first film and / or the second film can be used. As a result, the second antireflection film 6 can be formed at low temperature and low impact, and the negative effect on the solar cell characteristics is small and the transparency is high, so that a large antireflection effect is obtained.

  In the first to sixth embodiments described above, the second antireflection film 6 includes zirconia, titania, silicon oxide, indium oxide, tungsten oxide, magnesium oxide, yttrium oxide, tin oxide, five elements. One selected from the group consisting of antimony oxide, cesium oxide, barium titanate, strontium titanate, aluminum oxide, zinc oxide, silicon carbide, magnesium fluoride, zinc sulfide, selenium sulfide, gallium nitride, aluminum nitride and boron nitride Or a laminated film of two or more kinds of amorphous films selected from the above group can be used. Thereby, the second antireflection film 6 can be formed at low temperature and low impact, and the adverse effect on the solar cell characteristics is small, and a highly transparent and highly reliable antireflection effect is obtained.

  As described above, the method for manufacturing a solar cell according to the present invention increases the short-circuit current by reducing the light reflection by the antireflection film formed from the antireflection film material made of a liquid phase. This is useful when forming excellent solar cells.

It is sectional drawing which shows schematic structure of the photovoltaic cell concerning Embodiment 1 of this invention. It is sectional drawing for demonstrating the manufacturing method of the photovoltaic cell concerning Embodiment 1 of this invention. It is sectional drawing for demonstrating the manufacturing method of the photovoltaic cell concerning Embodiment 1 of this invention. It is sectional drawing for demonstrating the manufacturing method of the photovoltaic cell concerning Embodiment 1 of this invention. It is sectional drawing for demonstrating the manufacturing method of the photovoltaic cell concerning Embodiment 1 of this invention. It is sectional drawing for demonstrating the manufacturing method of the photovoltaic cell concerning Embodiment 1 of this invention. It is sectional drawing which shows schematic structure of the photovoltaic cell concerning Embodiment 3 of this invention. It is sectional drawing which shows schematic structure of the photovoltaic cell concerning Embodiment 5 of this invention. It is sectional drawing for demonstrating the manufacturing method of the photovoltaic cell concerning Embodiment 5 of this invention. It is sectional drawing for demonstrating the manufacturing method of the photovoltaic cell concerning Embodiment 5 of this invention. It is sectional drawing for demonstrating the manufacturing method of the photovoltaic cell concerning Embodiment 5 of this invention. It is sectional drawing which shows schematic structure of the solar cell module concerning Embodiment 6 of this invention. It is sectional drawing for demonstrating the manufacturing method of the solar cell module concerning Embodiment 6 of this invention. It is sectional drawing for demonstrating the manufacturing method of the solar cell module concerning Embodiment 6 of this invention. It is sectional drawing for demonstrating the manufacturing method of the solar cell module concerning Embodiment 6 of this invention. It is sectional drawing for demonstrating the manufacturing method of the solar cell module concerning Embodiment 6 of this invention.

Explanation of symbols

1 Semiconductor substrate 2 First antireflection film 2
3 Back electrode 3
4 Light-receiving surface side electrode 5, 5a, 5b, 5c, 5d, 5e Electrode protection layer 6 Second antireflection film 7 Sealing material 8 Transparent substrate 9 Protection substrate

Claims (5)

A first step of forming a first antireflection film made of a silicon nitride film on the entire surface of one main surface side of the semiconductor substrate having a PN junction;
A second step of forming an electrode by printing a paste containing aluminum powder or silver on the first antireflection film, followed by baking ;
A third step of forming an electrode part protective layer covering and sealing the electrode only on the electrode;
A liquid containing a second antireflection film having a refractive index lower than the refractive index of the surface of the semiconductor substrate on the semiconductor substrate on which the electrode portion protective layer is formed, and particles having a primary particle diameter of 5 nm to 300 nm and a solvent. A fourth step of applying and forming
The manufacturing method of the photovoltaic cell characterized by including. The first step includes
Forming a silicon nitride film as the first antireflection film by a plasma-assisted chemical vapor deposition method ;
Method for manufacturing a solar cell according to claim 1, wherein the. The electrode part protective layer is made of a resin layer;
The manufacturing method of the photovoltaic cell of Claim 1 or 2 characterized by these. The second antireflection film comprises zirconia, titania, silicon oxide, indium oxide, tungsten oxide, magnesium oxide, yttrium oxide, tin oxide, antimony pentoxide, cesium oxide, barium titanate, strontium titanate, aluminum oxide, oxide 1st particle | grains which are a kind of particle | grains selected from the group which consists of zinc, silicon carbide, magnesium fluoride, zinc sulfide, selenium sulfide, gallium nitride, aluminum nitride, and boron nitride, and whose particle diameter is 5 nm-300 nm A second film comprising a film, or a mixture of two or more kinds of particles selected from the above group and having a particle diameter of 5 nm to 300 nm, or the first film and / or the second film Consisting of laminated films,
The manufacturing method of the photovoltaic cell as described in any one of Claims 1 thru | or 3 characterized by these. The manufacturing method of the solar cell module characterized by including the manufacturing method of the photovoltaic cell as described in any one of Claims 1 thru | or 4 .

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