JP5017008B2 - Semiconductor manufacturing method and manufacturing apparatus - Google Patents

Description

  The present invention relates to a semiconductor manufacturing method and a manufacturing apparatus, and more particularly to a technique effective when applied to a prober.

As a prober device, a wafer is placed on a chuck disposed in an outer box, and a cylindrical electromagnetic shield box having an open top surface is disposed in the outer box. And a structure in which a sealed space surrounding the chuck and the wafer is formed by the side surface and the bottom surface of the electromagnetic shield box. A tester head is arranged on the upper surface of the outer box, a probe card is arranged on the tester head, a part of the upper surface of the outer box is opened, and the probe needle of the probe card is It protrudes into the outer box through the opening (see, for example, Patent Document 1).
JP 2000-183120 A (FIG. 1)

  In the diode wafer test process in the diode manufacturing process, the demand for low-capacity and narrow-deviation products has been increasing in recent years.

  For example, the demand trend of variable capacitance diodes was mainly for TV tuners from 1980 to 1990, and the measured capacitance value at that time was several pF to 500 pF, and the measurement specification range was several pF.

  After that, because it is used in VCO (Voltage Controlled Oscillator) and SHF (Super High Frequency) tuners, etc., the capacity has been reduced by supporting high frequency of several G (giga) Hz, and the measurement spec range is It decreased from 1 pF to 0.3 pF, and further to about 0.05 pF. Recently, the growth of mobile communication devices has been large, and in order to realize no adjustment rather than cost reduction, the demand for narrow deviation products has increased, and VCO VC diodes (Variable Capacitance Diodes), PIN (P- Intrinsic-n) diodes are the mainstream.

  As the capacity measurement spec range is increasing from several pF to 0.05 pF year by year, the measurement error of capacity measurement has come to affect the yield.

  Hereinafter, problems of the prober 100 of the comparative example of FIG. 16 examined by the present inventors will be described.

  Since the prober 100 of the comparative example shown in FIG. 16 is a type that corresponds to the probe card 101 exchanged for each chip size, the scanner board 103 (holding substrate) opens and closes with respect to the shield plate 102 of the prober 100. is there.

  Further, a gap S is formed between the probe card 101 and the shield plate 102 of the prober 100 in order to loosely adjust the horizontal measurement positions of the probe card 101 and the wafer 104. As a result, when the capacitance measurement is performed, the gap S is not shielded, so that the stray capacitance is added to the measurement value, and as a result, the capacitance measurement value is shifted.

  That is, if there is an unshielded portion in the prober measurement system, there is a problem that when the capacitance measurement is performed, the capacitance measurement value shifts and exceeds the measurement specification range.

  In the prober device described in Patent Document 1 (Japanese Patent Laid-Open No. 2000-183120), the upper surface of the outer box 1 made of an electromagnetic shield is disposed between the wafer 9 and the probe card 4. However, in an actual prober, there is only a gap of about 1 to 2 mm between the wafer and the probe card.

  This is because when the probe needle 5 is set up vertically as shown in Patent Document 1, the pressure from the probe needle 5 increases with respect to the element surface of the wafer 9, and the probe needle 5 moves smoothly on the element surface. This is because the probe needle 5 cannot be set up vertically and the probe needle actually needs to be provided at an angle. In other words, in order to prevent the occurrence of the problem, it is necessary to provide the probe needles obliquely, and as a result, the gap between the wafer and the probe card is about 1 to 2 mm.

  Therefore, the upper surface of the outer box 1 is arranged in the gap of about 1 to 2 mm as shown in Patent Document 1 when warping or deformation of the upper surface of the outer box 1 comes into contact with the surface of the wafer. In view of adverse effects on the surface of the wafer (destruction of the surface, etc.), it is substantially difficult.

  An object of the present invention is to provide a technique capable of improving yield by improving measurement accuracy of capacitance measurement and minute current measurement.

  The above and other objects and novel features of the present invention will be apparent from the description of this specification and the accompanying drawings.

  Of the inventions disclosed in this application, the outline of typical ones will be briefly described as follows.

  That is, the present invention prepares (a) a probe card provided with a plurality of probe needles, and a holding substrate that holds the probe card and has wiring for transmitting a measurement signal to the probe needles. And (b) placing a semiconductor wafer having electrodes formed on the main surface and the back surface facing the main surface on a stage with the main surface facing upward. And (c) disposing the probe card in the opening of the first shield plate having the opening so as to face the semiconductor wafer through the probe card held by the holding substrate; And a step of contacting the probe needle with the electrode of the semiconductor wafer and transmitting a predetermined signal from the holding substrate to the probe needle to measure the capacity of the semiconductor wafer or measure a minute current. Further, in the step (d), the opening of the probe card and the first shield plate is formed by a ring-shaped second shield plate that is conductively connected to the probe card and protrudes from the outer periphery of the probe card. The capacitance measurement or the minute current measurement is performed by closing the gap with the part.

  In addition, the present invention supports a probe card provided with a plurality of probe needles, a holding substrate having a wiring for holding the probe card and transmitting a measurement signal to the probe needle, and a semiconductor wafer. And a stage. Furthermore, a first shield plate having an opening through which the probe card held by the holding substrate can pass, and a ring-like shape that is conductively connected to the probe card and protrudes from the outer periphery of the probe card And a second shield plate. Furthermore, after passing the probe card through the opening of the first shield plate and placing the probe card facing the main surface of the semiconductor wafer placed on the stage, the probe needle contacts the electrode of the semiconductor wafer. When the predetermined signal is transmitted from the holding substrate to the probe needle to measure the capacity of the semiconductor wafer or the minute current measurement, the second shield plate sets the gap between the probe card and the opening of the first shield plate. Measurement is performed in a closed state.

  Of the inventions disclosed in the present application, effects obtained by typical ones will be briefly described as follows.

  In a prober, the ring-shaped second shield plate that protrudes from the outer periphery of the probe card closes the gap between the probe card and the opening of the first shield plate, and the capacitance measurement or the minute current measurement is performed. Since the numerical value of the stray capacitance added to the constant value can be reduced, the measurement accuracy of the capacitance measurement and the minute current measurement can be improved and the yield can be improved.

  In the following embodiments, the description of the same or similar parts will not be repeated in principle unless particularly necessary.

  Further, in the following embodiment, when it is necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments, but they are not irrelevant to each other unless otherwise specified. The other part or all of the modifications, details, supplementary explanations, and the like are related.

  Also, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), particularly when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and it may be more or less than the specific number.

  Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Note that components having the same function are denoted by the same reference symbols throughout the drawings for describing the embodiments, and the repetitive description thereof will be omitted.

(Embodiment)
FIG. 1 is a schematic configuration diagram showing an example of the structure of a semiconductor manufacturing apparatus (prober) according to an embodiment of the present invention. FIG. 2 is an external perspective view showing an example of the structure of a semiconductor wafer whose capacitance is measured by the prober shown in FIG. 3 is a block diagram showing an example of the movable state of the scanner board provided in the prober shown in FIG. 1, and FIG. 4 is a sectional view showing an example of the open / close state of the scanner board in the prober shown in FIG. 5 is a plan view showing an example of the structure of a shield ring (second shield plate) provided in the prober shown in FIG. 1, and FIG. 6 shows a structure cut along the line AA shown in FIG. FIG. 7 is a conceptual view of measurement showing an example of a method for measuring stray capacitance in the embodiment of the present invention, FIG. 8 is a result diagram showing measurement results of stray capacitance measured by the prober shown in FIG. These are the result figures which show the measurement result of the stray capacitance measured with the prober of the comparative example. Further, FIG. 10 is a schematic configuration diagram showing a structure of a main part of a semiconductor manufacturing apparatus (prober) according to a modification of the embodiment of the present invention, and FIG. 11 is an example of a structure of a shield ring provided in the prober shown in FIG. FIG. 12 is a schematic configuration diagram showing the structure of the main part of a semiconductor manufacturing apparatus (prober) according to another modification of the embodiment of the present invention, and FIG. 13 is a shield provided in the prober shown in FIG. It is a perspective view which shows an example of the structure of a ring. FIG. 14 is a plan view showing an example of the manufacturing method of the shield ring shown in FIG. 13, and FIG. 15 is a perspective view showing the individual structure of the shield ring shown in FIG.

  In the present embodiment, a semiconductor manufacturing method using a prober and the prober (semiconductor manufacturing apparatus) will be described. The prober 14 shown in FIG. 1 used in this embodiment is used to inspect the electrical characteristics of the semiconductor chip 2 formed on the semiconductor wafer 1. Here, the prober 14 mainly measures the capacitance of the diode wafer and the minute current. A case where measurement is performed will be described.

  The configuration of the prober 14 shown in FIG. 1 will be described. A probe card 3 provided with a plurality of probe needles 3a, and a holding unit that holds the probe card 3 and has wiring for transmitting measurement signals to the probe needles 3a. It has a scanner board 6 that is a substrate and a stage 5 that supports the semiconductor wafer 1. Further, a shield plate (first shield plate) 4 having an opening 4 a having a size capable of passing the probe card 3 held by the scanner board 6 is electrically connected to the probe card 3, and the probe card 3. And a shield ring 7 which is a ring-shaped second shield plate protruding from the outer periphery of the scanner board, and a scanner board inside a closed shield system 4 b including the probe card 3, the shield ring 7 and the shield plate 4. 6 is arranged.

  In the prober 14, when the capacity measurement or the minute current measurement of the semiconductor wafer 1 is performed, the prober 14 is first placed on the stage 5 through the probe card 3 held by the scanner board 6 in the opening 4 a of the shield plate 4. The probe card 3 is arranged to face the main surface 1a of the semiconductor wafer 1. Thereafter, the probe needle 3a is brought into contact with the electrode 2b of the semiconductor chip 2 shown in FIG. 2 on the main surface 1a of the semiconductor wafer 1, and a predetermined signal is transmitted from the scanner board 6 to the probe needle 3a to measure the capacity of the semiconductor wafer 1. Measure minute current.

  At that time, the prober 14 according to the present embodiment performs capacitance measurement or minute current measurement in a state where the gap S between the probe card 3 and the opening 4a of the shield plate 4 is closed by the shield ring 7, whereby the scanner board The measurement is performed by blocking the stray capacitance generated between the wiring system terminal on 6 and the wiring system terminal on the stage 5 with the shield ring 7.

  That is, the measurement is performed by completely blocking the stray capacitance generated between the scanner board 6 arranged inside the shield system 4b and the stage 5 arranged outside the shield system 4b by the shield ring 7. is there.

  The scanner board 6 supports the probe card 3 via the support portion 6a, and switches between capacitance measurement and DC (micro current) measurement by the changeover switch 6b shown in FIG. 16, and further switches the measurement pin. Is. Therefore, the probe card 3 is attached to the scanner board 6 via the support portion 6a.

  The prober 14 is connected to a controller 9 and a prober control unit 10. The controller 9 is electrically connected to the scanner board 6 and the stage 5 via a capacity meter / DC tester 8. The controller 9 controls, for example, switching between capacitance measurement and DC measurement, or switching between measurement pins. On the other hand, the prober control unit 10 controls the movement of the stage 5 in the XYZ directions. However, the controller 9 may have the control function of the prober control unit 10.

  Further, as shown in FIG. 3, the probe card 3 includes a probe card board 3b made of a printed board having wiring and a shielding metal plate 3c, and is provided with a plurality of probe needles 3a. . Further, when the probe card 3 is attached to the support portion 6a, the probe card 3 is attached so that the metal plate 3c is disposed on the stage 5 side and the probe card substrate 3b is disposed on the scanner board 6 side. Note that the inner peripheral edge of the shield ring 7 is interposed between the probe card substrate 3b and the metal plate 3c and is sandwiched between the probe card substrate 3b and the metal plate 3c. 3b and the metal plate 3c are screwed together.

  As shown in FIG. 2, the diode wafer (semiconductor chip 2 on the semiconductor wafer 1) to be measured in the present embodiment has a vertical structure element, and the surface electrode 2b is provided on the main surface 2a side. The common electrode 2d is formed on the back surface 2c side. Each electrode may be a cathode on the main surface 2a side and an anode on the back surface 2c side, or vice versa.

  The prober 14 of this embodiment has a structure that can be changed to the corresponding probe card 3 by exchanging the type of the semiconductor wafer 1 (semiconductor chip 2).

  That is, when the probe card 3 is exchanged due to a change in product type, as shown in FIG. 4, first, the scanner board 6 is opened, and then the desired probe card 3 is exchanged. Accordingly, a circular opening 4 a having a slightly larger size than the probe card 3 is formed in the shield plate 4 so that the probe card 3 can be taken out of the shield plate 4. After the replacement of the probe card 3, the scanner board 6 is closed while passing the probe card 3 through the opening 4a again, and the probe card 3 is placed inside the shield plate 4.

  Furthermore, when measuring the capacitance and the minute current, it is necessary to adjust the horizontal position of the probe needle 3a.

  Therefore, in the prober 14 of the present embodiment, as shown in FIG. 3, the probe card 3 is taken out of the shield plate 4 (opening / closing the scanner board 6) and the probe card 3 is adjusted in the horizontal position. A gap S is formed between the probe card 3 and the opening 4 a of the shield plate 4.

  Next, the shield ring 7 attached to the probe card 3 will be described.

  As shown in FIGS. 5 and 6, the shield ring 7 is formed in a circular ring shape, and is formed of a copper plate having a plate thickness of, for example, about 0.3 to 0.4 mm. Au plating is formed on the surface so as to prevent the generation of rust. The shield ring 7 is formed with a convex portion 7a as shown in FIG. 6 in contact with the shield plate 4 at the periphery along the ring shape according to the shape of the circular opening 4a of the shield plate 4. .

  The convex portion 7 a is for bringing the shield ring 7 into contact with the shield plate 4. That is, on the shield ring 7, the convex portion 7 a is formed on the entire outer periphery so as to protrude toward the shield plate 4 when attached to the probe card 3.

  Furthermore, as shown in FIG. 5, the shield ring 7 is formed with a plurality of slits (cuts) 7b in the direction along the radial direction and over the entire circumference. The slit 7b is for giving the contact portion including the convex portion 7a of the shield ring 7 a degree of freedom, and for reducing the rigidity of the contact portion and increasing the degree of adhesion with the shield plate 4.

  Next, the semiconductor manufacturing method of the present embodiment will be described. The semiconductor manufacturing method uses a prober 14 shown in FIG.

  First, the probe card 3 provided with a plurality of probe needles 3a, the scanner board 6 holding the probe card 3 and having wiring for transmitting a measurement signal to the probe needles 3a, and the semiconductor wafer 1 can be supported. A prober 14 is prepared, which has a stage 5 and a shield plate 4 disposed between the stage 5 and the scanner board 6.

  Thereafter, the semiconductor wafer 1 (diode wafer) having electrodes (electrode 2b and common electrode 2d shown in FIG. 2) formed on the main surface 1a and the back surface 1b opposite to the main surface 1a is staged with the main surface 1a facing upward. 5 is mounted.

  On the other hand, the probe card 3 is disposed in the opening 4 a of the shield plate 4 so as to face the semiconductor wafer 1 through the probe card 3 held by the scanner board 6. Before placing the semiconductor wafer 1 on the stage 5, the probe card 3 may be arranged in advance so as to face the stage 5 in the same manner.

  Thereafter, position adjustment is performed to align the probe needle 3 a with the position of the electrode 2 b on the main surface 1 a of the semiconductor wafer 1. That is, the horizontal position of the probe needle 3a is adjusted, and then a predetermined signal is transmitted from the scanner board 6 to the probe needle 3a in a state where the probe needle 3a is in contact with the electrode 2b of the semiconductor wafer 1. Electrical characteristic inspection such as capacitance measurement or minute current measurement is performed.

  At that time, the ring-shaped shield ring 7 that is conductively connected to the probe card 3 and protrudes from the outer periphery of the probe card 3 closes the gap S between the probe card 3 and the opening 4 a of the shield plate 4, thereby Perform characteristic inspection. In addition, as shown in FIG. 3, the said capacity | capacitance is in the state which made the convex part 7a of the shield ring 7 formed over the perimeter of the outer periphery according to the shape of the opening part 4a of the shield board 4 contact the shield board 4. It is preferable to perform electrical characteristics inspection such as measurement or measurement of the minute current.

  According to the semiconductor manufacturing method of the present embodiment and the prober (semiconductor manufacturing apparatus) used therein, the opening 4a of the probe card 3 and the shield plate 4 is formed by the ring-shaped shield ring 7 protruding from the outer periphery of the probe card 3. Thus, the numerical value of the stray capacitance that has been added to the actual measurement value can be reduced by performing the electrical characteristic inspection such as the capacitance measurement or the minute current measurement while closing the gap S.

  As a result, the yield can be improved by improving the measurement accuracy of capacitance measurement and minute current measurement.

  That is, with respect to the gap S between the probe card 3 and the opening 4 a of the shield plate 4, the stray capacitance generated between the terminal on the scanner board 6 and the terminal of the stage 5 is pushed to the outer periphery of the probe card 3. It can be blocked by the ring 7, and the value of stray capacitance generated during this period can be reduced.

  As a result, the yield can be improved by improving the measurement accuracy of capacitance measurement and minute current measurement.

  8 and 9 show the prober 14 having the structure shown in FIG. 1 of the present embodiment and the prober 100 of the comparative example shown in FIG. 16, and the semiconductor wafer 1 is placed on the stage 5 as shown in FIG. Only the stray capacitance is measured by the capacitance meter 11 in a state where it is not placed, and the measurement result is shown. The stray capacitance is measured over the entire region corresponding to the semiconductor wafer 1, and the gap (G) between the probe needle 3a and the stage 5 is G = 100 μm as capacitance correction. As a result, in the comparative example of FIG. 9, the range (L) of the capacitance measurement value is L = 11 fF, whereas the range (M) of the capacitance measurement value by the prober 14 of the present embodiment in FIG. = 5 fF, and by using the prober 14 of the present embodiment, the range of the capacitance measurement value can be reduced to ½ or less.

  Thereby, by using the prober 14 of the present embodiment, it is possible to improve the measurement accuracy of the capacity measurement and the minute current measurement of the semiconductor wafer 1.

  Further, as shown in FIG. 3, the convex portion 7 a is formed on the peripheral edge of the shield ring 7 in the ring shape according to the shape of the circular opening 4 a of the shield plate 4, The convex portion 7a can be brought into contact with the shield plate 4 over substantially the entire circumference.

  Thus, the stray capacitance generated between the terminal on the scanner board 6 and the terminal of the stage 5 through the gap S between the probe card 3 and the opening 4a of the shield plate 4 can be reliably blocked by the shield ring 7. It is possible to further improve the measurement accuracy of capacitance measurement and minute current measurement.

  As a result, it is possible to apply the prober 14 of this embodiment even in high frequency (for example, several gigahertz) measurement used in diode products.

  As shown in FIG. 5, the shield ring 7 is formed with a plurality of slits (cuts) 7b in the direction along the radial direction and over the entire circumference. Thereby, the contact part including the convex part 7a of the shield ring 7 is divided into a plurality of parts, so that the contact part can have a degree of freedom, and the rigidity of the contact part is lowered to be in close contact with the shield plate 4. The degree can be increased.

  As a result, the shielding effect of the shield ring 7 can be further enhanced.

  Next, a shield ring (second shield plate) of a modification of the present embodiment will be described. The shield ring (second shield plate) 12 of the modification shown in FIGS. 10 and 11 is formed with a curved portion 12a curved outward at the outer periphery thereof, and similarly to the shield ring 7, A plurality of slits (cuts) 12b are formed in the direction along the radial direction and over the entire circumference.

  The curved portion 12a has a spring property by forming a plurality of slits (cuts) 12b over the entire circumference, and the curved portion 12a has a spring property, so that the opening 4a of the shield plate 4 is provided. The curved portion 12a can be reliably brought into contact with the inner peripheral wall.

  Therefore, also in the prober 14 of the modification shown in FIG. 10, the same shielding effect as the prober 14 shown in FIG. 3 can be obtained.

  Furthermore, since the plurality of slits 12b are formed in the direction along the ring-shaped radial direction and over the entire circumference, the curved portion 12a of the shield ring 12 is divided into a plurality of portions so that individual curves are obtained. The degree of freedom can be given to the part 12a, and the rigidity of the curved part 12a can be lowered to increase the degree of adhesion with the shield plate 4.

  In addition, since the shield ring 12 of a modification can be manufactured with less bending compared with the shield ring 7 shown in FIG. 5, the cost of the shield ring 12 can be reduced.

  Further, the shield ring (second shield plate) 13 of another modified example shown in FIGS. 12 to 15 includes a plurality of shield pieces 13a bent in an L shape one by one as shown in FIG. As shown in FIG. 12, it is folded and connected by soldering or the like and manufactured in a ring shape as shown in FIG. 13, and is arranged in a non-contact manner with the shield plate 4 as shown in FIG.

  Even in this case, since the gap S between the probe card 3 and the opening 4a of the shield plate 4 can be blocked by the shield ring 13, the stray capacitance generated between the terminal on the scanner board 6 and the terminal on the stage 5 is reduced. These can be blocked by the shield ring 13, and the numerical value of the stray capacitance generated during this period can be reduced.

  In addition, in the shield ring 13 of another modified example, in the manufacture, a plurality of shield pieces 13a that are bent in advance are simply connected by soldering or the like, compared with the shield ring 7 shown in FIG. Since the bending process can be reduced, the cost of the shield ring 13 can be reduced.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiments of the invention. However, the present invention is not limited to the embodiments of the invention, and various modifications can be made without departing from the scope of the invention. It goes without saying that it is possible.

  For example, as described in the above embodiment, the shield ring and the shield plate may or may not be in contact. That is, in electrical characteristic inspections such as semiconductor wafer capacity measurement and minute current measurement, it is only necessary that the shield ring is disposed so as to close (cover) the gap between the probe card and the opening of the shield plate. .

  The present invention is suitable for a prober apparatus.

It is a composition schematic diagram showing an example of the structure of the semiconductor manufacturing device (prober) of an embodiment of the invention. It is an external appearance perspective view which shows an example of the structure of the semiconductor wafer in which capacity | capacitance measurement is performed by the prober shown in FIG. It is a block diagram which shows an example of the movable condition of the scanner board provided in the prober shown in FIG. It is sectional drawing which shows an example of the open / close state of the scanner board in the prober shown in FIG. It is a top view which shows an example of the structure of the shield ring (2nd shield board) provided in the prober shown in FIG. It is sectional drawing which shows the structure cut | disconnected along the AA line shown in FIG. It is a measurement conceptual diagram which shows an example of the measuring method of the stray capacitance in embodiment of this invention. It is a result figure which shows the measurement result of the stray capacitance measured with the prober shown in FIG. It is a result figure which shows the measurement result of the stray capacitance measured with the prober of the comparative example. It is the structure schematic which shows the structure of the principal part of the semiconductor manufacturing apparatus (prober) of the modification of embodiment of this invention. It is a perspective view which shows an example of the structure of the shield ring (2nd shield board) provided in the prober shown in FIG. It is a structure schematic which shows the structure of the principal part of the semiconductor manufacturing apparatus (prober) of the other modification of embodiment of this invention. It is a perspective view which shows an example of the structure of the shield ring (2nd shield board) provided in the prober shown in FIG. It is a top view which shows an example of the manufacturing method of the shield ring shown in FIG. FIG. 15 is a perspective view showing an individualized structure of the shield ring shown in FIG. 14. It is the structure schematic which shows the structure of the prober of a comparative example.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 1a Main surface 1b Back surface 2 Semiconductor chip 2a Main surface 2b Electrode 2c Back surface 2d Common electrode 3 Probe card 3a Probe needle 3b Probe card board 3c Metal plate 4 Shield plate (first shield plate)
4a Opening 4b Shield system 5 Stage 6 Scanner board (holding substrate)
6a Supporting part 6b Changeover switch 7 Shield ring (second shield plate)
7a Convex 7b Slit 8 Capacitance meter / DC tester 9 Controller 10 Prober control unit 11 Capacitance meter 12 Shield ring (second shield plate)
12a Curved portion 12b Slit 13 Shield ring (second shield plate)
13a shield piece 14 prober (semiconductor manufacturing equipment)
100 prober 101 probe card 102 shield plate 103 scanner board 104 wafer

Claims (5)

(A) preparing a probe card provided with a plurality of probe needles, and a holding substrate having a wiring for holding the probe card and transmitting a measurement signal to the probe needle;
(B) placing a semiconductor wafer having an electrode formed on a main surface and a back surface facing the main surface on a stage with the main surface facing upward;
(C) disposing the probe card in the opening of the first shield plate having the opening so as to face the semiconductor wafer through the probe card held by the holding substrate;
(D) contacting the probe needle with the electrode of the semiconductor wafer and transmitting a predetermined signal from the holding substrate to the probe needle to perform capacitance measurement or microcurrent measurement of the semiconductor wafer;
In the step (d), the probe card and the opening of the first shield plate are connected by the ring-shaped second shield plate that is conductively connected to the probe card and protrudes from the outer periphery of the probe card. A method for manufacturing a semiconductor, wherein the capacitance measurement or the minute current measurement is performed while closing a gap.   2. The semiconductor manufacturing method according to claim 1, wherein in the step (d), the second shield plate is brought into contact with the first shield plate in accordance with the shape of the opening of the first shield plate. A method for manufacturing a semiconductor, comprising performing capacitance measurement or measuring the minute current. A probe card provided with a plurality of probe needles;
A holding substrate having wiring for holding the probe card and transmitting a measurement signal to the probe needle;
A stage for supporting a semiconductor wafer;
A first shield plate having an opening through which the probe card held by the holding substrate can pass;
A ring-shaped second shield plate that is conductively connected to the probe card and protrudes from the outer periphery of the probe card;
After the probe card is disposed so as to face the main surface of the semiconductor wafer placed on the stage through the probe card held by the holding substrate in the opening of the first shield plate, the probe The second shield plate is used when measuring a capacitance or a minute current of the semiconductor wafer by transmitting a predetermined signal from the holding substrate to the probe needle by bringing the needle into contact with the electrode on the main surface of the semiconductor wafer. Thus, the capacitance measurement or the minute current measurement is performed in a state where a gap between the probe card and the opening of the first shield plate is closed.   4. The semiconductor manufacturing apparatus according to claim 3, wherein the second shield plate is formed with a convex portion or a curved portion that contacts the first shield plate according to a shape of the opening of the first shield plate. The semiconductor manufacturing apparatus characterized by the above-mentioned.   4. The semiconductor manufacturing apparatus according to claim 3, wherein a plurality of slits are formed in the ring-shaped second shield plate in a direction along the radial direction and over the entire circumference. Semiconductor manufacturing equipment.

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