JP5046529B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a flexible semiconductor device and a method for manufacturing the semiconductor device.

  In recent years, a technique for providing an integrated circuit formed of a transistor or the like on a flexible substrate such as plastic has been attracting attention. A semiconductor device formed by providing an integrated circuit over a flexible substrate can achieve weight reduction and cost reduction as compared with the case where a substrate such as a semiconductor substrate or a glass substrate is used. In addition, since a flexible semiconductor device can be bent, application to various fields and places is expected.

  However, when physical force (external force) such as bending is applied from the outside to a semiconductor device formed by providing an integrated circuit including an element such as a transistor over a flexible substrate, the semiconductor device Due to the generated stress, an element such as a transistor included in the semiconductor device may be damaged, and the characteristics of the element such as a transistor may be affected.

  In view of the above problems, an object of the present invention is to provide a semiconductor device having flexibility and resistance to physical changes such as bending, and a method for manufacturing the semiconductor device.

  In order to achieve the above object, the present invention takes the following measures.

  A semiconductor device of the present invention includes a semiconductor film provided over a flexible substrate, a gate electrode provided over the semiconductor film via a gate insulating film, and an interlayer insulating film provided over the gate electrode. And a refracting portion provided between the plurality of transistors. The refracting portion can be provided, for example, by forming a space such as an opening in the interlayer insulating film. Note that a refraction part is a strain (a change in the shape or volume of an object) that is selectively greater than other parts in the semiconductor device when a physical force such as bending is applied to the semiconductor device. The part that occurs.

  As another structure of the semiconductor device of the present invention, a semiconductor film provided over a flexible substrate, a gate electrode provided over the semiconductor film with a gate insulating film interposed therebetween, and a gate electrode are provided. A material having a plurality of transistors each having an interlayer insulating film and a refracting portion provided between the plurality of transistors, wherein the refracting portion is a substance having an elastic modulus lower than that of the interlayer insulating film in an opening provided in the interlayer insulating film It is characterized by being filled. In the present invention, a material having a glass transition point lower than that of the interlayer insulating film or a material having plasticity can be provided as the material filling the opening.

  In the above structure, a thin film transistor (TFT), a field effect transistor (FET) in which a channel region is provided in a single crystal semiconductor film, an organic transistor, or the like can be used as the transistor. In addition, when a semiconductor device includes an element such as a diode or a capacitor, not limited to a transistor, a refractive portion can be provided between these elements.

  In the method for manufacturing a semiconductor device of the present invention, a peeling layer is formed over a first substrate, a first insulating film is formed over the peeling layer, a thin film transistor is formed over the first insulating film, and the thin film transistor is covered. A second insulating film is formed, a conductive film electrically connected to the thin film transistor is formed over the second insulating film, and a third insulating film is formed so as to cover the second insulating film and the conductive film Then, a first opening is selectively formed in the second insulating film and the third insulating film, and a substance having a lower elastic modulus than the second insulating film and the third insulating film is formed in the first opening. A second opening is selectively formed in the first insulating film, the second insulating film, and the third insulating film to expose the peeling layer, and an adhesive surface is provided on the surface of the third insulating film. The film is adhered, the release layer and the first substrate are peeled off from the first insulating film, and the first insulation is formed on the second substrate. It is characterized in that to fix the. In the above structure, a material having a glass transition point lower than that of the second insulating film and the third insulating film instead of the material having a lower elastic modulus than that of the second insulating film and the third insulating film in the first opening. Or a plastic material can be provided.

  Further, as another method for manufacturing the semiconductor device of the present invention, a plurality of integrated circuits including transistors are attached to a substrate on which a conductive film pattern is formed so as to be electrically connected to the conductive film pattern, An insulating film is formed so as to cover the plurality of integrated circuits, and a recess is formed in the insulating film positioned between the plurality of integrated circuits. In addition, after forming a recess in the insulating film, a material having a lower elastic modulus than the insulating film, a material having a glass transition point lower than that of the insulating film, a material having plasticity than the insulating film, or the like can be provided in the recess.

  As another method for manufacturing a semiconductor device of the present invention, a plurality of integrated circuits including transistors are provided over a substrate, a conductive film that electrically connects the plurality of integrated circuits is formed, and the plurality of integrated circuits is formed. An insulating film is formed so as to cover, and a recess is formed in the insulating film located between the plurality of integrated circuits. In addition, after forming a recess in the insulating film, a material having a lower elastic modulus than the insulating film, a material having a glass transition point lower than that of the insulating film, a material having plasticity than the insulating film, or the like can be provided in the recess. The conductive film for electrically connecting the integrated circuits can be formed by a printing method such as a droplet discharge method or screen printing. Note that the droplet discharge method is a method in which droplets (also referred to as dots) of a composition containing a material having conductivity, insulation, or the like are selectively discharged (jetted) to be formed at an arbitrary place. Depending on the method, it is also called an inkjet method.

  When forming a semiconductor device having a plurality of integrated circuits provided over a flexible substrate, by forming a refractive portion between a plurality of integrated circuits or between elements such as transistors included in the integrated circuits. Even when an external force such as bending is applied to the semiconductor device, since the bending is selectively caused in the refracted part, the stress applied to the element such as a transistor is reduced, and the element such as the transistor is damaged Can be reduced. Further, it is possible to prevent the characteristics of elements such as transistors from being affected. Further, by selectively providing a refracting portion inside the semiconductor device, the semiconductor device can be bent with a smaller force.

  Embodiments of the present invention will be described below with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that modes and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the description of the embodiments below. Note that in the structures of the present invention described below, the same reference numerals may be used in common in different drawings.

(Embodiment 1)
In this embodiment mode, a structural example of a semiconductor device of the present invention will be described with reference to the drawings.

  Generally, when a stress is applied to an object, a change in shape and volume (also referred to as “strain”) of the object occurs. When a stress is applied to a semiconductor device including an integrated circuit provided over a flexible substrate by a physical force such as bending, an element such as a transistor included in the integrated circuit is distorted and damaged. This may affect the characteristics of the elements. Therefore, in the semiconductor device 150 described in this embodiment, a refractive portion 153 is provided between integrated circuits 152a to 152d provided over a flexible substrate such as plastic (FIG. 1A). . The refraction part 153 may be provided in any manner as long as it is between the integrated circuits 152a to 152d. For example, the refraction part is provided with the integrated circuit 152a, the integrated circuit 152b, the integrated circuit 152c, and the integrated circuit as shown in FIG. It may be provided so as to be continuously arranged between 152d, or may be provided so as to be partially arranged between the integrated circuit 152a and the integrated circuit 152b or between the integrated circuit 152c and the integrated circuit 152d.

  Note that the refraction part is a strain that is selectively greater than other parts in the semiconductor device when a physical force such as bending is applied to the semiconductor device (change in the shape or volume of the object). This refers to the part where this occurs. For example, when a refractive part is provided in a certain part of the semiconductor device and the semiconductor device is bent, stress is generated inside the semiconductor device, but distortion caused by the stress is selectively generated in the refractive part. The semiconductor device bends due to refraction. In addition, by selectively providing a refracting portion inside the semiconductor device, a large distortion is selectively generated in the refracting portion, so that the radius of curvature is reduced with a weaker force than when the refracting portion is not provided. It can be bent. Therefore, stress applied to an element such as a transistor provided in the integrated circuit can be reduced, and the element such as the transistor can be prevented from being damaged.

  The refracting portion 153 is provided by forming a material that is more easily bent than the other portions. Note that in this specification, a substance provided in a refractive portion is sometimes referred to as a refractive substance for convenience.

  The substance provided in the refracting part may be any substance that has a property of bending more easily than the substance provided in the part other than the refracting part. For example, an elastic substance or a plastic substance can be used. Note that in the case of using a substance exhibiting elasticity, the elastic modulus (stress / strain ratio) of the substance provided in the refraction portion is set to be lower than the elastic modulus of the substance provided in the other region. Further, in the case of using a plastic material, it is preferable that the material provided in the refracting portion is provided so as to be more plastic than the material provided in other regions. Here, the term “elasticity” refers to the property that an object whose shape or volume has been changed by an external force is restored to its original state when the force is removed. The plasticity here refers to the property of being easily deformed by an external force and leaving strain even after the force is removed.

  As the substance exhibiting elasticity, a substance having a high elasticity limit is preferable. For example, a substance such as rubber that has a property of deforming greatly when a force is applied and returning to the original shape when the force is removed can be used. Specifically, a polymer compound exhibiting rubber elasticity can be used. In addition, it is also possible to use a polymer compound or the like that exhibits the property (viscoelasticity) having both elasticity and viscosity.

  As a material having plasticity, an insulator such as a polymer compound that has a property of being easily deformed by an external force and remaining strained even when the force is removed can be used. In addition, a metal such as Au, Ag, Al, or Cu that exhibits ductility or malleability can be used. Therefore, in the present invention, when a plastic material is provided in the refracting portion, when the semiconductor device is bent by applying a physical force, it is kept bent even after the physical force is removed. can do.

  In the case of using an organic compound such as a polymer having a glass transition temperature in the refractive part, the glass transition point of the substance provided in the refractive part is set lower than the glass transition point of the substance provided in another region. A substance with a low glass transition point has higher viscoelasticity than a substance with a high glass transition point. Therefore, when a substance with a low glass transition point and a substance with a high glass transition point are provided, stress is applied. A large strain is selectively generated in a material having a low glass transition point. Thus, by changing the glass transition point, the refracted portion and other regions can be provided with the same substance.

  In addition, the substance provided in the refractive portion may be provided so as to have a lower hardness than the substance provided in other regions. Further, a protective film made of a material having high hardness may be provided above a region that does not want to bend including a transistor or the like. In addition, what is necessary is just to evaluate the hardness of a substance by a Vickers hardness test.

  In addition, since a large strain is selectively generated when stress is applied, it is preferable to provide a material having high bending resistance in the refraction portion. In the case of using an elastic body, it is preferable to use a substance having a high elastic limit. By using a material having a high bending resistance, the resistance of the semiconductor device can be improved.

  Next, a schematic diagram of a cross-sectional structure between a and b in FIG. 1A is illustrated in FIG.

  In FIG. 1B, a semiconductor device 150 includes integrated circuits 152a to 152d provided over a flexible substrate 151. Here, the integrated circuits 152a to 152d are insulating films 154 and 156 to 158, respectively. In this case, the transistor 155 and the element formation layer 180 including the refractive material 163 are included. More specifically, the transistor 155 is provided over the flexible substrate 151 with the insulating film 154 interposed therebetween, the insulating films 156 to 158 are provided so as to cover the transistor 155, and the insulating films 156 to 158 are formed. A refractive material 163 is provided in the opening 131.

  As the substrate 151, a flexible film-like substrate can be used. For example, a film made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, paper made of a fibrous material, base material A laminated film of a film (polyester, polyamide, inorganic vapor deposition film, paper, etc.) and an adhesive synthetic resin film (acrylic synthetic resin, epoxy synthetic resin, etc.) can be used. Alternatively, a flexible metal substrate may be used. For example, a stainless steel substrate can be used.

  The integrated circuits 152a to 152d have elements such as transistors and diodes. For example, various diodes such as a variable capacitance diode, a Schottky diode, or a tunnel diode can be applied as the diode. In the present invention, various kinds of integrated circuits such as a CPU, a memory, or a microprocessor can be provided by using these transistors, diodes, and the like.

  As the insulating film 154, an insulating film containing oxygen or nitrogen, such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y), or the like It is possible to provide a single layer structure or a stacked structure of these. For example, in the case where the insulating film 154 is provided with a two-layer structure, a silicon nitride oxide film may be provided as a first insulating film and a silicon oxynitride film may be provided as a second insulating film. When the insulating film 154 is provided with a three-layer structure instead of the two-layer structure, a silicon oxynitride film is provided as the first insulating film and a silicon nitride oxide film is provided as the second insulating film. A silicon oxynitride film may be provided as a third-layer insulating film.

  As the insulating film 156, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y) is formed by sputtering, plasma CVD, or the like. A single-layer structure of a film containing oxygen such as oxygen or nitrogen, a film containing carbon such as DLC (diamond-like carbon), or a stacked structure thereof can be used.

  As the insulating films 157 and 158, oxygen or nitrogen such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), or silicon nitride oxide (SiNxOy) (x> y) is used. In addition to insulating films and carbon-containing films such as DLC (diamond-like carbon), other single layers or laminated layers of organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, and acrylic, and siloxane materials It can be provided in a structure.

  As the transistor 155, for example, a thin film transistor (TFT) may be provided, or a field effect transistor (FET) in which the substrate is formed as a channel on a semiconductor substrate such as Si, or a channel region may be organic. An organic TFT formed of a compound material may be provided. In addition, the transistor 155 can provide various kinds of integrated circuits such as a CPU, a memory, or a microprocessor. Here, an example is shown in which a thin film transistor including a CMOS circuit in which an n-channel semiconductor and a p-channel semiconductor are combined is provided as the transistor 155. Further, an impurity region (including a source region, a drain region, and an LDD region) is provided in the semiconductor film, and an insulating film (side wall) is provided so as to be in contact with the side surface of the gate electrode. Further, although an example in which an LDD is formed in an n-channel semiconductor film and an LDD is not provided in a p-channel semiconductor film is shown, of course, a p-channel semiconductor film is similar to an n-channel semiconductor film. An LDD region may be provided on the substrate. Further, a silicide layer of nickel, molybdenum, cobalt, or the like may be provided in one or both of the source region, the drain region, and the gate electrode. When a thin film transistor or an organic TFT is provided, the semiconductor film is provided in an island shape, so that even when an external force such as bending is applied to the semiconductor device, the stress applied to the semiconductor film can be reduced to prevent damage or the like. it can.

  Here, as the refractive material 163, a material that is easily bent as compared with a stacked body of the insulating film 157 and the insulating film 158 or a stacked body of the insulating films 156 to 158 is provided. For example, polyethylene, vinyl acetate, ethylene vinyl acetate, polystyrene, polyurethane, polypropylene, polyvinyl fluoride, vinyl chloride, polyester, polyamide, polyimide, organic materials such as Au, Ag, Cu, Al, etc. A metal or the like can be used. In the case of using the above material, the elastic modulus is lower than that of the material used for the insulating film 156, the insulating film 157, and the insulating film 158. In the case where a high molecular compound is used as the refractive material 163, the refractive index 163 is provided so that the glass transition point is lower than that of the material used for the insulating film 156, the insulating film 157, and the insulating film 158. The material used for the refractive material 163 may be formed using the same material as at least one of the insulating films 156 to 158, and in this case, the material used for at least one of the insulating films 156 to 158 is refracted. Each of the materials used as the substance 163 is formed to have a different glass transition point so that the glass transition point of the material used as the refractive substance 163 is lower than the glass transition point of the material used for at least one of the insulating films 156 to 158. Provided. For example, when an organic material is used for the insulating film 156, the insulating film 157, or the insulating film 158, the glass transition point of the organic material provided for the insulating film 156, the insulating film 157, or the insulating film 158 is provided so as to be higher than room temperature. The glass transition point of the organic material used as 163 can be provided to be lower than room temperature.

  In FIG. 1B, the example in which the refractive portion 153 is provided by filling the opening 131 formed with the insulating films 156 to 158 with the refractive material 163 is shown; however, instead of providing the refractive material 163, insulation is provided. The refractive portion 153 can also be provided by making a cut in the film 156, 157 or 158, or by forming a space 160 without providing anything in the opening (FIG. 1C). In this manner, by providing a cut or a space in a part or all of the stacked body of the insulating films 156 to 158, when stress is applied to the semiconductor device, the stress is concentrated on the cut or the space and the transistor or the like is concentrated. The applied stress can be reduced.

  In FIG. 1, the refractive portion 153 is provided between the integrated circuits 152a to 152d having various functions such as a CPU and a memory provided on the substrate 151. However, the structure is not limited to this, and stress is applied. It can be placed anywhere except where you want to avoid. For example, it can be provided in the region of the integrated circuits 152a to 152d. An example of this case is shown in FIG.

  FIG. 2A shows a case where the integrated circuits 152a to 152d are each divided into a plurality of blocks and a refracting portion is provided between the blocks. More specifically, taking the integrated circuit 152b as an example, the integrated circuit 152b is divided into six regions 161a to 161f, and a strain is selectively applied when stress is applied between the blocks 161a to 161f. The resulting refraction portions 162a, 162b, 162c, etc. are provided. The refracting portions 162a to 162c provided between the blocks are provided to avoid the transistors.

  A schematic diagram of a cross-sectional structure between cd in FIG. 2A is shown in FIG.

  A transistor 155 included in each region of the blocks 161a to 161c is provided over a flexible substrate 151 with an insulating film 154 interposed therebetween, and insulating films 156 to 158 are provided so as to cover the transistor 155, and the insulating films 156 to 156 Refractive materials 164a and 164b are provided in openings 132a and 132b formed in 158, respectively. The opening 132a is provided between the blocks 161a and 161b, and the opening 132b is provided between the blocks 161b and 161c.

  In addition, as shown in FIG. 2C, instead of providing the refractive materials 164a and 164b, the insulating films 156, 157 and 158 are cut, or spaces 165a and 165b are provided without providing anything in the openings. A structure is also possible.

  Note that the refractive portion can be provided between the transistors.

  As described above, by providing the semiconductor device with a refractive portion, when the semiconductor device is bent, the refractive portion is selectively strained and bent, so that an element such as a transistor provided in a region other than the refractive portion is bent. Damage or the like can be prevented. Further, when a semiconductor device is bent so as to have a certain radius of curvature, a semiconductor device provided with a refracted portion can be bent by applying a smaller force than a semiconductor device provided with no refracted portion. The stress applied to can be reduced.

(Embodiment 2)
In this embodiment, an example of a method for manufacturing a semiconductor device of the present invention will be described with reference to drawings.

  In this embodiment, after providing an element formation layer including an element such as a transistor on a substrate having rigidity such as glass, the element formation layer is separated from the substrate having rigidity using a peeling method. An example in which a semiconductor device is manufactured by providing an element formation layer over a flexible substrate is described.

  Here, an example is shown in which the element formation layer 180 is peeled from the substrate 170 after the twelve element formation layers 180 are provided over the separation substrate 171 over one substrate 170 (FIG. 3A).

  First, a peeling layer 171 is formed over the substrate 170, and an element formation layer including an insulating film 154, a thin film transistor (TFT) 175, an insulating film 156, an insulating film 157, a conductive film 194, and an insulating film 158 is formed over the peeling layer 171. 180 is formed (FIG. 4A). Specifically, a thin film transistor 175 is formed over the separation layer 171 with an insulating film 154 interposed therebetween, insulating films 156 and 157 are formed so as to cover the transistor, and connected to the impurity region of the thin film transistor 175 over the insulating film 157. A conductive film 194 is formed as described above, and an insulating film 158 is formed so as to cover the conductive film 194. Further, an insulating film may be formed as a base film between the substrate 170 and the separation layer 171. By providing an insulating film between the substrate 170 and the separation layer 171, contamination or the like from the substrate 170 to the separation layer 171 can be prevented.

  Next, openings 172a and 172b are provided by selectively removing the insulating films 156 to 158 (FIG. 4B). The openings 172a and 172b may be provided in any shape such as a linear shape or a circular shape, and are provided in a portion where the transistor 175 is avoided. The openings 172a and 172b can be provided by a photolithography method or laser light irradiation.

  Next, refractive materials 173a and 173b are provided in the openings 172a and 172b, respectively (FIG. 4C).

  Next, the element formation layer 180 is peeled from the substrate 170. Here, after the element formation layer 180 is selectively irradiated with laser light to form the opening 176, the element formation layer 180 is peeled from the substrate 170 using physical force. As another peeling method, after the opening 176 is formed and the peeling layer 171 is exposed, an etching agent is introduced into the opening 176 to remove the peeling layer 171 and then peel off ( FIG. 5 (A)). In this case, the peeling layer 171 may be completely removed or may be removed so as to leave a part of the peeling layer 171 by controlling the etching conditions. Here, the peeling layer 171 is removed so that a part of the peeling layer 171 remains. By performing the removal so as to leave a part of the separation layer 171, it is possible to prevent the element formation layer 180 from being completely separated from the substrate 170 even after the separation layer 171 is removed and being separated. Further, since the etching time can be shortened and the amount of the etching agent used can be reduced, the working efficiency can be improved and the cost can be reduced.

  Next, an adhesive film 177 is attached to the surface of the insulating film 158, and the element formation layer 180 is separated from the substrate 170 (FIG. 5B). Here, since the substrate 170 and the insulating film 154 in the element formation layer 180 are partially connected by the remaining separation layer, the element formation layer 180 is separated from the substrate 170 by physical means.

  Next, the element formation layer 180 is sealed with a flexible substrate 151 and a substrate 159 (FIGS. 3B and 5C). A specific example of sealing is shown in FIG. The surface of the element formation layer 180 on the side peeled off from the substrate 170 is adhered to the film-like substrate 151, the film 177 is peeled off, and then the surface of the element formation layer 180 on the side peeled off from the film 177 is attached to the film-like substrate 159. Adhering to and sealing. At this time, when a sealing roll 192 that performs one or both of heat treatment and pressure treatment, a supply roll 191 around which a film-like substrate 159 is wound, and a belt conveyor 190 are used, the substrates 151 and 159 are sequentially sealed. A semiconductor device can be formed. Next, the substrates 151 and 159 are cut by the cutting means 193.

  Through the above steps, a flexible semiconductor device can be provided (FIG. 6B). Note that the element formation layer 180 may not be sealed with the substrate 159 but may be completed when it is provided over the flexible substrate 151. Below, the material etc. which are used in the said process are demonstrated concretely.

  As the substrate 170, a glass substrate, a quartz substrate, a metal substrate, a semiconductor substrate, or a stainless substrate on which an insulating film is formed can be used. If such a substrate is used, the area and shape of the substrate are not greatly limited. Therefore, for example, if a substrate having a rectangular shape with one side of 1 meter or more is used, the productivity is remarkably improved. be able to. Such an advantage is a great advantage compared to the case of using a circular silicon substrate. In this embodiment mode, the peeled substrate 170 can be reused, so that a semiconductor device can be manufactured at lower cost. For example, even when a high-cost quartz substrate is used, there is an advantage that a semiconductor device can be manufactured at low cost by repeatedly using the quartz substrate.

  In the case where an insulating film is provided as a base film between the substrate 170 and the peeling layer 171, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) A single-layer structure of an insulating film containing oxygen or nitrogen such as (x> y) or a stacked structure thereof can be used. These insulating films can be formed using various CVD methods such as a sputtering method and a plasma CVD method.

As the separation layer 171, a metal film, a stacked structure of a metal film and a metal oxide film, a semiconductor film such as Si, a silicon oxide film, or the like can be used. As the metal film, tungsten (W), molybdenum (Mo), titanium (Ti), tantalum (Ta), niobium (Nd), nickel (Ni), cobalt (Co), zirconium (Zr), zinc (Zn), A film made of an element selected from ruthenium (Ru), rhodium (Rh), lead (Pd), osmium (Os), iridium (Ir), or an alloy material or compound material containing the element as a main component, It is formed by stacking. A film made of these materials can be formed by various CVD methods such as a sputtering method and a plasma CVD method. As a stacked structure of a metal film and a metal oxide film, after the metal film is formed, an oxide of the metal film is provided on the surface of the metal film by performing plasma treatment in an oxygen atmosphere and heat treatment in an oxygen atmosphere. be able to. For example, in the case where a tungsten film formed by a sputtering method is provided as the metal film, a metal oxide film made of tungsten oxide can be formed on the tungsten film surface by performing plasma treatment on the tungsten film. In this case, the oxide of tungsten is represented by WOx, X is 2 to 3, X is 2 (WO ₂ ), X is 2.5 (W ₂ O ₅ ), and X is In the case of 2.75 (W ₄ O ₁₁ ), X is 3 (WO ₃ ), and the like. In forming the tungsten oxide, there is no particular limitation on the value of X mentioned above, and it is preferable to determine which oxide is formed based on the etching rate or the like. In addition to the metal oxide film, metal nitride or metal oxynitride may be used. In this case, plasma treatment or heat treatment may be performed on the metal film in a nitrogen atmosphere or an N ₂ O atmosphere. As another method, a metal oxide film can be provided on the surface of the metal film by forming the insulating film 154 using a sputtering method in an oxygen atmosphere after forming the metal film. It is also possible to form a metal oxide film on the surface of the metal film by performing sputtering in an oxygen atmosphere after forming the metal film. In this case, the metal film and the metal oxide film can be provided with different metal elements. Note that these methods can also form metal nitride or metal oxynitride on the metal film by performing sputtering in a nitrogen atmosphere or in a nitrogen and oxygen atmosphere.

  The element formation layer 180 includes at least an insulating film 154, a thin film transistor 175, an insulating film 156, an insulating film 157, and an insulating film 158. The element formation layer 180 can provide various integrated circuits such as a CPU, a memory, or a microprocessor. In addition to the thin film transistor 175, the element formation layer 180 can take a form having an antenna. For example, an integrated circuit including a thin film transistor operates using an alternating voltage generated by an antenna, and can transmit to a reader / writer by modulating the alternating voltage applied to the antenna. Note that the antenna may be formed together with the thin film transistor, or may be formed separately from the thin film transistor and electrically connected later.

  As the insulating film 154, silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), silicon nitride oxide (SiNxOy) (x> y) is formed by sputtering or plasma CVD. It can be formed using a single layer structure of an insulating film containing oxygen or nitrogen, or a stacked structure thereof. For example, in the case where the insulating film 154 is provided with a two-layer structure, a silicon nitride oxide film may be formed as the first insulating film and a silicon oxynitride film may be formed as the second insulating film. In the case where the insulating film 154 has a three-layer structure, a silicon oxynitride film is formed as a first insulating film, a silicon nitride oxide film is formed as a second insulating film, and a third insulating film is formed. A silicon oxynitride film is preferably formed.

  The thin film transistor 175 may have any structure, for example, an impurity region (including a source region, a drain region, and an LDD region) may be formed, and a p-channel type, an n-channel type, or a p-channel type and an n-channel may be formed. Alternatively, a CMOS circuit in which types of semiconductors are combined may be provided. In addition, an insulating film (side wall) may be formed so as to be in contact with the side surface of the gate electrode provided above the semiconductor film, and nickel, molybdenum, or cobalt may be formed on one or both of the source region, the drain region, and the gate electrode. A silicide layer such as may be formed. As the semiconductor in the thin film transistor 175, an amorphous semiconductor or a crystalline semiconductor can be used; however, in the case where a thin film transistor with higher characteristics is used, the thin film transistor is preferably provided using a crystalline semiconductor. In this case, an amorphous semiconductor film is formed on the insulating film 154 by sputtering, LPCVD, plasma CVD, or the like, and then the amorphous semiconductor film is crystallized (laser crystallization, RTA or furnace annealing furnace). Crystallization method, thermal crystallization method using a metal element that promotes crystallization, thermal crystallization method using a metal element that promotes crystallization and laser crystallization method, etc.) A crystalline semiconductor film is formed.

  The insulating film 156 can be formed using a material similar to that described in the above embodiment.

  The insulating films 157 and 158 can be formed using a material similar to that described in the above embodiment. In particular, organic materials such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, and acrylic, and materials such as siloxane materials can be formed by using a spin coating method, a droplet discharge method, a printing method, or the like. In addition, the planarization and the processing time can be made more efficient. The insulating films 157 and 158 may be formed using the same material, or may be formed using different materials.

  As the conductive film 194, a single layer or a stacked structure including one kind of element selected from Al, Ni, C, W, Mo, Ti, Pt, Cu, Ta, Au, and Mn or an alloy containing a plurality of such elements is used. be able to. For example, as a conductive film made of an alloy containing a plurality of such elements, for example, an Al alloy containing C and Ti (Al-Ti-C), an Al alloy containing Ni (Al-Ni), and an Al alloy containing C and Ni An alloy (Al—Ni—C), an Al alloy containing C and Mn (Al—Mn—C), or the like can be used.

  The refractive materials 173a and 173b can be formed using a material similar to that of the refractive material 163 described in the above embodiment. The refractive materials 173a and 173b can be provided by using a droplet discharge method, a printing method such as screen printing, a spin coating method, or the like.

As the etchant, a gas or liquid containing a halide can be used. For example, ClF ₃ (chlorine trifluoride), NF ₃ (nitrogen trifluoride), BrF ₃ (bromine trifluoride), HF (fluorination) Hydrogen) can be used. Note that when HF is used, a silicon oxide film is used as a separation layer.

  As the film 177, a flexible film can be used, and a surface having an adhesive is provided on at least one surface. For example, a sheet material in which an adhesive is provided on a base film used as a base material such as polyester can be used. As the adhesive, a material made of a resin material containing an acrylic resin or the like or a synthetic rubber material can be used.

  As the substrates 151 and 159, flexible films can be used. For example, films made of polypropylene, polyester, vinyl, polyvinyl fluoride, vinyl chloride, paper made of a fibrous material, base film ( Polyester, polyamide, inorganic vapor deposition film, paper, etc.) and an adhesive synthetic resin film (acrylic synthetic resin, epoxy synthetic resin, etc.) can be used. In addition, the film is thermocompression-bonded to the object to be processed by heat treatment and pressure treatment, and when performing the heat treatment and pressure treatment, an adhesive layer provided on the outermost surface of the film, or A layer (not an adhesive layer) provided on the outermost layer is melted by heat treatment and bonded by pressure. Note that the element formation layer 180 may be sealed using the film 177 and the substrate 159.

  Further, the semiconductor device of the present invention is not limited to the above structure, and can be provided in other structures. Specific examples thereof will be described with reference to FIGS.

  In the structure of the semiconductor device described above, an example in which the refractive portion is filled with a material that is easier to bend than the insulating films 156 to 158 is shown. However, as shown in FIG. 178b. The spaces 178a and 178b can be provided by a photolithography method, laser light irradiation, or the like. Moreover, you may form a notch etc. using a physical means.

  As described above, when an external force such as bending is applied to the semiconductor device by selectively removing the insulating films 156 to 158 to provide a space, the strain is selectively concentrated on the refracted portions provided in the spaces 178a and 178b. It becomes possible to make it. As a result, distortion due to stress applied to the transistor can be reduced, so that damage to the transistor and the like can be prevented. In addition, by providing the refractive portion in the space, the step of filling the material can be omitted, so that the efficiency of the manufacturing process can be achieved.

  Further, as shown in FIGS. 7B and 7C, as the refraction portion, refractive materials 181a and 181b may be provided so as to penetrate the element formation layer 180 (FIG. 7C). Alternatively, it may be provided inside the element formation layer without being penetrated (FIG. 7B). Each manufacturing process will be described with reference to FIGS.

  First, a manufacturing process of the semiconductor device illustrated in FIG. 7B is illustrated in FIGS.

  First, the separation layer 171 is formed over the substrate 170, and the insulating film 154, the thin film transistor 155, the insulating film 156, and the insulating film 157 are formed over the separation layer 171 (FIG. 8A).

  Next, in order to provide a conductive layer electrically connected to the impurity region of the semiconductor film of the thin film transistor 155, an opening 195 is selectively formed in the insulating film 156 and the insulating film 157 so that the semiconductor film of the thin film transistor 155 is exposed. . At this time, openings 182a and 182b are formed at the same time (FIG. 8B).

  Next, refractive materials 179a and 179b are provided in the openings 182a and 182b, and a conductive film 194 is provided in the openings 195 (FIG. 8C).

  Next, an insulating film 158 is formed so as to cover the conductive film 194, and an opening 183 is formed in the insulating films 154 and 156 to 158 to expose the peeling layer 171 (FIG. 8D).

  After that, the semiconductor device is completed by performing the same process as that shown in FIGS. 5B and 5C (FIG. 7B). By using the method illustrated in FIGS. 8A and 8B, the openings 182a and 182b can be provided at the same time as the opening 195, so that the manufacturing process can be simplified.

  Next, a manufacturing process of the semiconductor device illustrated in FIG. 7C is illustrated in FIGS.

  First, the separation layer 171 is formed over the substrate 170, and the element formation layer 180 including the insulating film 154, the thin film transistor (TFT) 155, the insulating film 156, the insulating film 157, the conductive film 194, and the insulating film 158 is formed over the separation layer 171. It is formed (FIG. 9A).

  Next, openings 184a, 184b, and 185 are provided by selectively removing the insulating films 154 and 156 to 158 (FIG. 9B). The openings 184a and 184b can be provided by a photolithography method or laser light irradiation.

  Next, refractive materials 181a and 181b are provided in the openings 184a and 184b (FIG. 9C).

  After that, the semiconductor device is completed in the same manner as the steps shown in FIGS. 5B and 5C, whereby the semiconductor device is completed (FIG. 7C). By using the method shown in FIG. 9, the manufacturing process can be simplified when the openings 184a, 184b, and 185 are provided at the same time. Further, by providing the refractive portion so as to penetrate the element formation layer 180, damage to the thin film transistor or the like can be effectively prevented even when a force such as bending is applied to the semiconductor device.

  In FIG. 9B, it is also possible to provide a refractive portion as a space without providing anything in the openings 184a and 184b. In this case, since the etching agent can be introduced also from the openings 184a and 184b, the peeling layer 171 can be efficiently removed.

  In FIG. 9, openings 186a, 186b, and 187 may be provided by removing the insulating films 154 and 156 to 158 and the peeling layer 171 (FIG. 10A). In this case, the refractive materials 188 a and 188 b provided in the openings 186 a and 186 b are connected to the substrate 170. Therefore, even when the separation layer 171 is completely removed, the substrate 170 and the element formation layer 180 are connected by the refractive materials 188a and 188b, and thus can be prevented from being separated. After that, the element formation layer 180 is peeled from the substrate 170 using physical means, and a semiconductor device can be manufactured by performing a sealing process.

  Alternatively, as illustrated in FIG. 29A, a protective film 196 may be provided in a region where the transistor 175 and the like are not desired to be bent. The protective film 196 is formed of a material that is more difficult to bend than a material (here, the refractive materials 173a and 173b) provided between the transistors. For example, as the protective film 196, a material having a higher elastic modulus than the refractive materials 173a and 173b, a material having a high glass transition point, a material having high hardness, or a material having no plasticity can be used. The protective film 196 can be provided not only above the transistor 175 but also below the transistor 175. The protective film 196 includes metals such as W, Ti, Mo, Ni, Ta, and Mn, thermosetting resins such as phenol resins, urea resins, melamine resins, unsaturated polyester resins, acrylic resins, epoxy resins, and silicon resins. Can be used. In addition, a material having high hardness such as so-called ceramics can be used. It is also possible to use the same material as the refractive materials 173a and 173b, but even in that case, a material having a higher elastic modulus than the material used for the refractive materials 173a and 173b, a material having a high glass transition point, and a hardness of It is made of high material or material that does not have plasticity.

  Further, as shown in FIG. 29B, in addition to the structure of FIG. 29A, a structure in which a recess 197 is provided in one or both of the substrate 151 and the substrate 159 where the protective film is not provided may be employed. Good. Note that FIG. 29B illustrates an example in which a protective film 196 is provided above and below the transistor. In addition, the protective film 196 in FIG. 29B may be provided using a material that is less likely to bend than a stacked body such as an insulating film in the portion 198 located between the transistors, and the portion 198 may be provided with a refractive material. In this manner, by providing a recess in the film-like substrate that seals the element formation layer, when stress is applied to the semiconductor device, stress is concentrated in the recess, so that the stress applied to the transistor is reduced and damage is prevented. can do.

  Note that in this embodiment, as a method for manufacturing a semiconductor device, after an element formation layer is provided over a rigid substrate such as glass, the element formation layer is peeled and provided over a flexible substrate. Although shown, the method for manufacturing the semiconductor device of the present invention is not limited to this. For example, after providing an element formation layer on a glass substrate or a semiconductor substrate such as Si, the glass substrate or the semiconductor substrate such as Si may be thinned by grinding or polishing. In this case, a flexible semiconductor device can be manufactured without peeling. Further, although an example in which a thin film transistor is provided as an element provided in an integrated circuit has been described, the present invention is not limited thereto, and a refractive portion can be similarly provided between a diode and a capacitor element even when a diode, a capacitor element, or the like is provided.

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 3)
In this embodiment, a structure different from that of the semiconductor device described in the above embodiment is described with reference to drawings.

  In an integrated circuit provided in a semiconductor device, when a transistor is arranged as a single unit or a state close to a single unit, breakdown due to static electricity or external stress is likely to occur. Therefore, as shown in FIG. 11, by providing a dummy pattern or a dummy transistor made of a semiconductor such as silicon or a metal around the transistor, the breakdown of the transistor due to static electricity or stress can be reduced. This will be described below with reference to FIG.

  FIG. 11A illustrates an example in which dummy transistors 252 a and 252 b are arranged adjacent to the source / drain direction of the transistor 251. FIG. 11B is a cross-sectional view taken along line gh in FIG. The dummy transistors 252a and 252b can be provided similarly to the transistor 251.

  In addition, as illustrated in FIG. 11C, dummy transistors 253a and 253b can be provided adjacent to each other in a direction perpendicular to the source / drain direction of the transistor 251. Needless to say, dummy transistors 254a to 254h may be provided on four sides of the transistor 251 as illustrated in FIG. In this manner, by providing a dummy transistor around a transistor that is arranged in a single or near-single state, the transistor 251 can be prevented from being destroyed by static electricity, stress, or the like.

  In addition, as illustrated in FIG. 11E, a dummy pattern 255 may be provided around the transistor 251 using a semiconductor, a metal, an insulating film, or the like. When the semiconductor device is bent, the dummy pattern 255 is selectively bent when the semiconductor device is bent by applying a material that is easily bent as described in the above embodiment mode, and thus the distortion generated in the transistor 251 is reduced. It is possible to suppress the breakdown of the transistor.

  Note that by providing the refraction portion described in the above embodiment in combination with the dummy transistor and the dummy pattern shown in FIG. 11, even when physical force such as bending is applied to the semiconductor device, It is possible to effectively prevent destruction of transistors and the like in the semiconductor device.

  In addition, by providing a transistor in consideration of strain caused by stress applied to the semiconductor device, breakdown of the transistor or the like can be effectively prevented. For example, in the case where the semiconductor device is provided so as to be attached to a curved surface, it is desirable that the curved bus line be aligned with the direction in which the carrier of the transistor moves (FIG. 19). By providing in this way, even when it bends so that it may have a curved surface drawn by movement of bus lines, such as a cone surface and a column surface, it can suppress that a transistor is influenced.

  In order to prevent destruction of elements such as transistors due to stress or the like, the ratio of the area of the active region (silicon island portion) of the elements such as transistors to the entire area should be 5 to 50%. preferable.

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 4)
An example different from the method for manufacturing the semiconductor device described in the above embodiment is described with reference to drawings.

  In this embodiment, an example in which an integrated circuit is attached to a substrate is described.

  As shown in FIG. 12A, integrated circuits 261a to 261d are provided by being attached to a substrate 260 (FIG. 12A). Integrated circuits 261 a to 261 d provided on the substrate 260 are electrically connected to each other through a wiring 262. FIG. 12B is a schematic diagram of a cross-sectional structure between i and j in FIG.

  In FIG. 12B, terminal portions 272a and 272b of the integrated circuits 261a and 261b and the wiring 262 are electrically connected. Here, the terminal portions 272a and 272b are connected to the wiring 262 through conductive particles 267 included in the resin 266 functioning as an adhesive. As a transistor included in the integrated circuit, a thin film transistor (TFT), a field effect transistor (FET) provided with a channel region formed in a semiconductor substrate, an organic transistor, or the like can be used. Here, an example is shown in which a field-effect transistor 271 provided with a single crystal silicon substrate 270 as a channel region is used. By forming a channel region of a transistor using a semiconductor substrate such as single crystal silicon, a transistor having high characteristics can be formed.

  As shown in FIG. 12, in the case where a semiconductor device is formed by bonding integrated circuits 261a to 261d on a substrate 260, a method of providing integrated circuits 261a to 261d on a substrate 260 on which wirings 262 are provided in advance ( FIG. 13A) and a method of forming the wiring 262 after the integrated circuits 261a to 261d are provided over the substrate 260 (FIG. 13B). Each method will be described below with reference to the drawings.

  As shown in FIG. 13A, in the case where an integrated circuit is provided over a substrate on which wiring is formed in advance, a terminal portion provided in the integrated circuit and a wiring provided on the substrate are electrically connected. Paste together. Here, the wiring 262 formed in advance on the substrate 260 and the terminal portions 272a and 272b provided so as to be exposed to the integrated circuits 261a and 261b are electrically connected (FIG. 14A). Here, the terminal portions 272a and 272b and the wiring 262 are connected to each other through conductive particles 267 included in the resin 266 functioning as an adhesive (FIG. 14B).

  On the other hand, as shown in FIG. 13B, when wiring is formed after an integrated circuit is provided over a substrate, a terminal portion provided in the integrated circuit and a conductive film provided over the substrate are electrically connected. After bonding so as to be connected, a conductive film functioning as a wiring is formed. Here, after electrically connecting the conductive film 263 formed in advance on the substrate 260 and the terminal portions 272a and 272b provided so as to be exposed to the integrated circuits 261a and 261b (FIG. 15A), A conductive film 265 functioning as a wiring is formed by a printing method such as a droplet discharge method or screen printing (FIG. 15B). Note that here, by using the conductive film 263 formed in advance on the substrate 260 as an alignment marker, an integrated circuit can be accurately attached to the substrate 260. Note that the droplet discharge method is a method in which droplets (also referred to as dots) of a composition containing a material having conductivity, insulation, or the like are selectively discharged (jetted) to be formed at an arbitrary place. Depending on the method, it is also called an inkjet method.

  As the wiring 262, the conductive film 263, and the conductive film 265, gold (Au), silver (Ag), platinum (Pt), nickel (Ni), tungsten (W), chromium (Cr), molybdenum (Mo), iron (Fe) ), Cobalt (Co), copper (Cu), palladium (Pd), carbon (C), aluminum (Al), manganese (Mn), titanium (Ti), tantalum (Ta), etc. A single layer or a stacked structure including an alloy containing a plurality of the elements can be used.

  Further, in the case where the conductive film 265 is formed by a droplet discharge method, a screen printing method, or the like, a concave portion 273 is provided in a portion where the conductive film 265 functioning as a wiring is provided in advance on the substrate 260, so that it is more accurate. A conductive film 265 can be formed over the substrate 260 (FIGS. 16A and 16B). The recess 273 provided in the substrate 260 is made of a metal such as nickel (Ni), cobalt (Co), copper (Cu), iron (Fe), zinc (Zn), or the like having a wiring pattern on the substrate 260 or an alloy thereof. It can be provided by pressing a metal mold or a silicon-processed mold. In addition, a recess having a wiring pattern can be formed by irradiating the substrate 260 with laser light. In addition, by selectively irradiating a laser beam or the like, the surface of the substrate 260 is changed (hydrophilicity, hydrophobicity, etc.) so that the selectively ejected liquid droplets are landed. It is also possible.

  In addition, when the two conductive films 265 and 275 that function as wirings formed over the substrate 260 cross each other, the conductive films 265 and 275 cross each other so that the two conductive films are not electrically connected. An insulating film 274 is provided only on a portion where the liquid is discharged by a droplet discharge method (FIG. 16C). By forming an insulating film only at a portion where the conductive films intersect, material utilization efficiency and process efficiency can be achieved.

  Next, the case where a plurality of integrated circuits provided over the substrate 260 is sealed will be described with reference to FIGS.

  As shown in FIG. 17A, in the case where a plurality of integrated circuits is provided over the substrate 260, sealing is preferably performed so that the integrated circuit is not damaged by distortion caused by stress applied to the semiconductor device. For this reason, when a stress is applied to the semiconductor device, a refracting portion that selectively bends and bends is provided between the integrated circuit and the integrated circuit. Further, by providing a large number of finer integrated circuits, the number of refracted portions formed between the integrated circuits increases, so that damage to the integrated circuit can be prevented when the semiconductor device is bent. An example of a cross-sectional view taken along k-l in FIG. 17A is shown in FIGS.

  In FIG. 17B, a material 282 which is easily distorted due to selective distortion between the integrated circuits provided over the substrate 260 is provided, and a flexible film 281 is provided so as to cover the integrated circuits. ing. The material 282 may be bent more easily than the integrated circuit or the film 281. For example, a material having a lower elastic modulus than the integrated circuit or the film 281, a material exhibiting plasticity, a material having a glass transition temperature lower than that of the film 281, or the like can be used.

  In addition, as shown in FIG. 17C, when an integrated circuit is covered with a flexible film 281 or the like, sealing is performed so as to form a space 284 between the integrated circuits, so that refraction occurs between the integrated circuits. A portion can also be provided. Further, by providing the uneven pattern 283 on the substrate 260 in the refracted portion, it is possible to prevent the stress from being applied to the integrated circuit by concentrating the stress on the refracted portion and bending the semiconductor device. 17B and 17C, a protective film may be provided above the transistor before the film 281 is provided as shown in FIG.

  Note that although an example of a face-down type semiconductor device is described in this embodiment, it is needless to say that a face-up type semiconductor device can be used (FIG. 18A). Here, the conductive film 285 and the conductive film 265 are connected to each other by forming the conductive film 265 by using a droplet discharge method, a printing method, or the like after an integrated circuit including the conductive film 285 is attached to the substrate 260. Yes. In addition, a face-up type semiconductor device can be provided by mounting by a wire bonding method or the like.

  In this embodiment mode, an example in which a field effect transistor (FET) provided by forming a channel region in a semiconductor substrate is used as an integrated circuit is shown. However, the present invention is not limited thereto, and for example, a thin film transistor (TFT) is used. Is also possible (FIG. 18B). In this case, by providing the refractive portion 286 also between the thin film transistors 175 as shown in the above embodiment mode, when the semiconductor device is bent, the semiconductor device can be bent with a smaller force and the transistor can be prevented from being damaged.

  Note that this embodiment mode can be freely combined with the above embodiment modes.

(Embodiment 5)
In this embodiment, a semiconductor device capable of exchanging data without contact can be manufactured by providing an antenna in the flexible semiconductor device described in the above embodiment. A semiconductor device capable of exchanging data without contact is generally an RFID (Radio Frequency Identification) tag (also referred to as an IC tag, an IC chip, an RF tag (Radio Frequency), a wireless tag, an electronic tag, or a wireless chip). Sometimes called. An example of a semiconductor device capable of exchanging data without contact will be described below with reference to the drawings.

  2. Description of the Related Art Generally, a semiconductor device (hereinafter also referred to as an RFID tag) capable of exchanging data without contact has an integrated circuit and an antenna, and is connected to an external device (reader / writer) without contact via the antenna. ) Can exchange data with each other. Therefore, by providing a conductive film functioning as an antenna in the semiconductor device described in the above embodiment, a semiconductor device capable of exchanging data without contact can be manufactured. For example, the semiconductor device 150 illustrated in FIG. 1 can be provided with a conductive film functioning as an antenna. In this case, the integrated circuits 152a to 152d in FIG. 1 include, for example, at least one of a power supply circuit, a clock generation circuit, a demodulation circuit, a modulation circuit, a storage circuit, and a control circuit that controls other circuits. ing. Next, specific configuration examples provided with antennas are shown in FIGS.

  FIG. 20A illustrates an example in which the semiconductor device described in Embodiment 1 is provided with a conductive film 291 functioning as an antenna. The conductive film 291 can be provided by being formed over the insulating film 158 in FIG. 4 in Embodiment Mode 2. In addition, after the insulating film 292 is formed so as to cover the conductive film 291, an opening is formed in a portion to be a refractive portion, and the refractive materials 173 a and 173 b are filled in the opening.

  As the conductive film 291, copper (Cu), aluminum (Al), silver (Ag), gold (Au), chromium (Cr), molybdenum (Mo), titanium (Ti), tantalum (Ta), tungsten (W) In addition, a conductive material having one or more metals such as nickel (Ni) or a metal compound can be used. The insulating film 292 is an insulating film containing oxygen or nitrogen such as silicon oxide (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) (x> y), or silicon nitride oxide (SiNxOy) (x> y). A film, a film containing carbon such as DLC (diamond-like carbon), an organic material such as epoxy, polyimide, polyamide, polyvinylphenol, benzocyclobutene, acrylic, or a single layer or a laminated structure such as a siloxane material Can do.

  Needless to say, a semiconductor device capable of exchanging data without contact can be manufactured by providing a conductive film functioning as an antenna in the structure illustrated in FIGS.

  FIG. 20B illustrates an example in which an antenna substrate 294 provided with a conductive film 293 functioning as an antenna is attached to the element formation layer of the semiconductor device described in Embodiment 1. In this case, separately formed element formation layers and antenna substrates are used.

  The element formation layer and the antenna substrate are bonded to each other with a resin 295 that functions as an adhesive, and the conductive particles in which the conductive film 299 formed over the insulating film 158 and the conductive film 293 that functions as an antenna are included in the resin 295. It is electrically connected through H.296.

  As described above, the antenna may be provided by directly forming a conductive film functioning as an antenna on the element formation layer, or may be attached to the element formation layer after separately forming a conductive film functioning as an antenna on the antenna substrate. May be provided.

  FIG. 21 illustrates an example in which an antenna is provided in the semiconductor device described in Embodiment 4. Here, a semiconductor device capable of exchanging data without contact is manufactured by providing integrated circuits 261a to 261d over a substrate 260 provided with a conductive film 297 functioning as an antenna in advance (FIG. 21A). )). In this case, the integrated circuits 261a to 261d include, for example, at least one of a power supply circuit, a clock generation circuit, a demodulation circuit, a modulation circuit, a storage circuit, and a control circuit that controls other circuits.

  The conductive film 297 functioning as an antenna can be provided in a manner similar to that of the wiring 262. In this case, the conductive film 297 functioning as an antenna is connected to the integrated circuit in the same manner as in Embodiment Mode 4 in which the conductive film 298 and the terminal portion 272 of the integrated circuit are included in the resin 266 that functions as an adhesive. Can be performed through the conductive particles 267 (FIG. 21B).

  Note that as shown in FIG. 15, after the integrated circuits 261 a to 261 b are formed over the substrate 260, the conductive film 297 that functions as an antenna together with the conductive film to be a wiring is formed by a droplet discharge method, a printing method, or the like. It is also possible to do.

  Further, this embodiment mode is not limited to the configuration in FIGS. 20 and 21 described above, and any combination may be provided as long as an antenna is provided in the semiconductor device described in the above embodiment mode.

  Next, application examples of a semiconductor device capable of exchanging data without contact will be described below with reference to the drawings.

  The RFID tag 80 has a function of communicating data without contact, and includes a power supply circuit 81, a clock generation circuit 82, a data demodulation circuit 83, a data modulation circuit 84, a control circuit 85 that controls other circuits, a storage circuit 86, and An antenna 87 is provided (FIG. 22A). Note that the number of memory circuits is not limited to one, and a plurality of memory circuits may be used. An SRAM, a flash memory, a ROM, an FeRAM, or the like, or an organic compound layer using a memory element portion may be used.

  A signal transmitted as a radio wave from the reader / writer 88 is converted into an AC electrical signal by electromagnetic induction in the antenna 87. In the power supply circuit 81, a power supply voltage is generated using an AC electrical signal, and the power supply voltage is supplied to each circuit using a power supply wiring. The clock generation circuit 82 generates various clock signals based on the AC signal input from the antenna 87 and supplies the generated clock signal to the control circuit 85. The demodulation circuit 83 demodulates the AC electric signal and supplies it to the control circuit 85. The control circuit 85 performs various arithmetic processes according to the input signal. The storage circuit 86 stores programs and data used in the control circuit 85, and can also be used as a work area during arithmetic processing. Then, data is sent from the control circuit 85 to the modulation circuit 84, and load modulation can be applied to the antenna 87 from the modulation circuit 84 in accordance with the data. The reader / writer 88 can read the data as a result by receiving the load modulation applied to the antenna 87 by radio waves.

  The RFID tag may be of a type in which the power supply voltage is supplied to each circuit by radio waves without mounting the power source (battery), or the power source (battery) is mounted on each circuit by the radio waves and the power source (battery). The power supply voltage may be supplied.

  By using the structure described in any of the above embodiments, an RFID tag that can be bent can be manufactured; thus, it can be attached to an object having a curved surface.

  Next, an example of how the RFID tag having flexibility is used will be described. A reader / writer 320 is provided on the side surface of the portable terminal including the display portion 321, and an RFID tag 323 is provided on the side surface of the article 322 (FIG. 22B). When the reader / writer 320 is held over the RFID tag 323 included in the item 322, the information about the product such as the raw material and origin of the item 322, the inspection result for each production process, the history of the distribution process, and the description of the item 322 are displayed on the display unit 321. Is displayed. In addition, when the product 326 is conveyed by a belt conveyor, the product 326 can be inspected using the reader / writer 324 and the RFID tag 325 provided on the product 326 (FIG. 22C). In this way, by using RFID in the system, information can be easily acquired, and high functionality and high added value are realized. In addition, as described in the above embodiment, even when pasted on an object having a curved surface, a transistor or the like included in the RFID tag can be prevented from being damaged, and a highly reliable RFID tag can be provided. It becomes possible.

  As a signal transmission method in the semiconductor device capable of exchanging contactless data as described above, an electromagnetic coupling method, an electromagnetic induction method, a microwave method, or the like can be used. The transmission method may be appropriately selected by the practitioner in consideration of the intended use, and an optimal antenna may be provided according to the transmission method.

  For example, when an electromagnetic coupling method or an electromagnetic induction method (for example, 13.56 MHz band) is applied as a signal transmission method in a semiconductor device, the conductive film functioning as an antenna is used because electromagnetic induction due to a change in magnetic field density is used. Are formed in a ring shape (for example, a loop antenna) or a spiral shape (for example, a spiral antenna).

  In addition, when a microwave method (for example, UHF band (860 to 960 MHz band), 2.45 GHz band, or the like) is applied as a signal transmission method in a semiconductor device, the wavelength of an electromagnetic wave used for signal transmission is considered. The length of the conductive layer functioning as an antenna may be set as appropriate. For example, the conductive film functioning as an antenna may be linear (for example, a dipole antenna), flat (for example, a patch antenna), or ribbon type. It can be formed into a shape or the like. Further, the shape of the conductive film functioning as an antenna is not limited to a linear shape, and may be provided in a curved shape, a meandering shape, or a combination thereof in consideration of the wavelength of electromagnetic waves.

  Next, an example of a method for managing a product on which an RFID tag is mounted will be described with reference to the drawings.

  FIG. 30 is a block diagram showing an example of a set product order production management system. In the system shown in FIG. 30, when a plurality of individuals such as consumers order a set product, the management center of the set product procures the product from manufacturer A and manufacturer B according to the order data of the product, and then to the individual. An example of shipping a set product is shown. Here, for the sake of convenience, the case where individuals 1 to 3 order products is shown.

  Individuals 1 to 3 can browse the contents of set products provided by the management center via a network such as a LAN, and can order desired set products. Here, a combination of the product A and the product B is a set product. Note that the product A has a plurality of products a1, a2, a3... An, and the product B has a plurality of products b1, b2, b3. Individuals can combine desired products from the products A and B into set products.

  For example, when considering a set product composed of a product A (for example, tea set) and a product B (for example, tea leaf), the product A has a plurality of products a1, a2, a3,. Product B has a plurality of products b1, b2, b3... Bn with different types of tea leaves, and individuals 1 to 3 set a combination of products desired from product A and product B. To order as. Here, the individual 1 orders the set product 1 consisting of a combination of a1 and b1, the individual 2 orders the set product 2 consisting of a combination of a2 and b2, and the individual 3 orders the set product 3 consisting of a combination of a3 and b3. Shows when to do.

  When there is an order from the individuals 1 to 3, the management center orders the product from the manufacturer A and the manufacturer B according to the order data. The manufacturer A manufactures the products a1, a2, and a3 according to the order data A sent from the management center. Further, RFID tags are provided for each product according to the order data A when the product is manufactured. Similarly, manufacturer B manufactures products b1, b2, and b3 equipped with RFID tags in accordance with order data B sent from the management center. The identification number and the like of the RFID tag are allocated and managed in advance for products ordered by the management center. Thereafter, the product (a1, a2, a3) and the product (b1, b2, b3) each provided with an RFID tag are sent from the manufacturer A and the manufacturer B to the management center.

  In the management center, a set product 1 (a1 + b1), a set product 2 (a2 + b2), and a set product are obtained by combining products a1 to a3 and b1 to b3 according to the individual order product data. 3 (a3 + b3). Here, by using the RFID tags provided in a1 to a3 and b1 to b3, a plurality of products can be easily identified without confirming the contents and the like, and set products 1 to set products 3 can be obtained. it can. Thereafter, the management center sends the set product 1 to the set product 3 to the individual 1 to the individual 3, respectively.

  In this way, when combining a plurality of products into one set product, RFID tags are provided for the products to be combined in advance, so that even when ordering from different manufacturers, identification is performed using RFID tags. Therefore, it is possible to easily identify a plurality of products and to obtain a desired set product with less labor. In addition, by providing an RFID tag managed for a product to be manufactured in advance, loss or theft of the product during a period from manufacture to sale can be effectively suppressed, and the cost can be reduced. Further, by using a flexible RFID tag as shown in this embodiment mode, it can be provided for various products such as a product having a curved surface.

  In addition to the above, flexible RFID tags have a wide range of uses, and any product that can be used for production, management, etc. without contact and clarifying information such as the history of objects. Can be applied. For example, banknotes, coins, securities, certificate documents, bearer bonds, packaging containers, books, recording media, personal belongings, vehicles, foods, clothing, health supplies, daily necessities, chemicals, etc. It can be provided and used in an electronic device or the like. These examples will be described with reference to FIG.

  Banknotes and coins are money that circulates in the market, and include those that are used in the same way as money in a specific area (cash vouchers), commemorative coins, and the like. Securities refer to checks, securities, promissory notes, and the like (see FIG. 23A). The certificate refers to a driver's license, a resident card, etc. (see FIG. 23B). Bearer bonds refer to stamps, gift tickets, various gift certificates, and the like (see FIG. 23C). Packaging containers refer to wrapping paper for lunch boxes, plastic bottles, and the like (see FIG. 23D). Books refer to books, books, and the like (see FIG. 23E). The recording media refer to DVD software, video tapes, and the like (see FIG. 23F). The vehicles refer to vehicles such as bicycles, ships, and the like (see FIG. 23G). Personal belongings refer to bags, glasses, and the like (see FIG. 23H). Foods refer to food products, beverages, and the like. Clothing refers to clothing, footwear, and the like. Health supplies refer to medical equipment, health equipment, and the like. Livingware refers to furniture, lighting equipment, and the like. Chemicals refer to pharmaceuticals, agricultural chemicals, and the like. Electronic devices refer to liquid crystal display devices, EL display devices, television devices (TV receivers, flat-screen TV receivers), mobile phones, and the like.

  Forgery can be prevented by providing RFID tags on bills, coins, securities, certificates, bearer bonds, and the like. In addition, it is possible to improve the efficiency of inspection systems and rental store systems by providing RFID tags for personal items such as packaging containers, books, and recording media, foods, daily necessities, and electronic devices. it can. By providing RFID tags on vehicles, health supplies, medicines, etc., counterfeiting and theft can be prevented, and medicines can prevent mistakes in taking medicines. The RFID tag is provided by being attached to the surface of the article or embedded in the article. For example, a book may be embedded in paper, and a package made of an organic resin may be embedded in the organic resin. Even when the flexible RFID tag having the structure shown in the above embodiment mode is used and provided on paper or the like, the RFID tag is included in the RFID tag by using a semiconductor device. It is possible to prevent damage to the device.

  In this way, by providing RFID tags on packaging containers, recording media, personal items, foods, clothing, daily necessities, electronic devices, etc., it is possible to improve the efficiency of inspection systems and rental store systems. it can. In addition, forgery and theft can be prevented by providing an RFID tag in vehicles. Moreover, by embedding it in creatures such as animals, it is possible to easily identify individual creatures. For example, by embedding an RFID tag equipped with a sensor in a living creature such as livestock, it is possible to easily manage the current health condition such as the body temperature as well as the year of birth, gender or type.

  Note that this embodiment can be freely combined with the above embodiment.

(Embodiment 6)
In this embodiment, an example in which the semiconductor device described in any of the above embodiments is applied to a display device will be described with reference to drawings.

  Here, as an example, a display device in which a pixel region 401 and driver circuits 402 and 403 are provided over a flexible substrate 400 is illustrated (FIG. 24A).

  The pixel region 401 includes wirings 405a and 405b functioning as signal lines, wirings 406a and 406b functioning as power supply lines, wirings 405a, 405b, 406a and 406b, and wirings 423 functioning as scanning lines extending in the vertical direction. Thin film transistors (TFTs) 421 and 422 and a pixel portion 407 are provided so as to be surrounded by a wiring functioning as the signal line, a wiring functioning as a power supply line, and a wiring functioning as a scanning line. In addition, a refractive portion 404 is provided between the pixel portion and the pixel portion (FIG. 24B). By providing the refracting portion 404, when the display device is bent (when stress is applied to the display device), the refracting portion is selectively distorted, and the refracting portion 404 is selectively bent.

  Here, one of the source and drain regions of the TFT 421 is connected to the wiring 405b and the other is connected to the gate electrode of the TFT 422. One of the source and drain regions of the TFT 422 is connected to the wiring 406 b and the other is connected to the pixel portion 407. Further, a refractive portion 404 is provided between the wiring 406a and the wiring 405b.

  Next, FIG. 25 illustrates a cross-sectional structure between op in FIG.

  A TFT 422 is provided over the substrate 400, and one of the source and drain regions of the TFT 422 is connected to the wiring 406 b and the other is connected to the pixel portion 407. The pixel portion 407 includes a pixel electrode 411, a light emitting layer 412, and a counter electrode 413, and the other of the source and drain electrodes of the TFT 422 is connected to the pixel electrode 411. In addition, a refractive material 442 is provided in the opening 441 as a refractive portion 404 between the pixel portion. The refractive material 442 is provided by filling a material that is more easily bent than the stacked body of the insulating films 431 to 435 (FIG. 25A). For example, the refractive material 442 can be provided using a material having a lower elastic modulus than a stacked body of the insulating films 431 to 435, a material having plasticity, a material having a low glass transition point, or the like. Reference numeral 410 denotes a counter substrate.

  Note that the refractive material 442 is not limited to the above structure, and can be provided by removing any of the insulating films 431 to 435. For example, as shown in FIG. 25B, a refractive material 444 made of a material that is easier to bend than the stacked body of the insulating films 431 to 434 is provided in the opening 443 provided by removing the insulating films 431 to 434, and then, Alternatively, the insulating film 435 may be provided. Note that the openings 441 and 443 may be spaces without providing the refractive materials 442 and 444.

  Next, an example of a method for manufacturing the display device described above will be briefly described with reference to the drawings.

  First, a separation layer 171 is formed over the substrate 170, and over the separation layer 171, an insulating film 431, a transistor 422, insulating films 432 and 433, wirings 405a and 405b, wirings connected to the source or drain region of the transistor 422, An element formation layer 445 including the pixel electrode 411 and the insulating film 434 is formed (FIG. 26A). Specifically, a thin film transistor 422 is formed over the separation layer 171 with an insulating film 431 interposed therebetween, an insulating film 433 is formed so as to cover the transistor 422, and wirings 405 a and 405 b and a pixel electrode 411 are formed over the insulating film 433. Then, a conductive film connected to the impurity region of the thin film transistor 422 is formed, and an insulating film 434 is formed so as to cover an end portion of the pixel electrode 411.

  Next, the element formation layer 445 is peeled from the substrate 170. Here, the element formation layer 445 is selectively irradiated with laser light to form the openings 446a to 446c, and then the element formation layer 445 is peeled from the substrate 170 using physical force. As another separation method, the insulating films 431 to 434 are selectively removed to form openings 446a to 446c, so that the release layer 171 is exposed, and then an etching agent is introduced into the openings 446a to 446c. Thus, the peeling layer 171 is removed (FIG. 26B). Although the entire peeling layer 171 may be removed, here, the peeling is performed so that a part of the peeling layer 171 remains.

  Next, an adhesive film 177 is attached to the surface of the insulating film 434, and the element formation layer 445 is separated from the substrate 170 (FIG. 26C). Here, since the substrate 170 and the insulating film 431 in the element formation layer 445 are partly connected by the remaining separation layer, the element formation layer 445 is separated from the substrate 170 by physical means.

  Next, the surface of the element formation layer 445 that is peeled from the substrate 170 is bonded to the film-like substrate 151, and the film 177 is peeled off (FIG. 27A).

  Next, the light-emitting layer 412, the counter electrode 413, and the refractive materials 444a to 444c are selectively formed over the pixel electrode 411 (FIG. 27B). The formation of the light emitting layer 412 and the counter electrode 413 may be performed after the refractive materials 444a to 444c are formed or may be performed before the formation. Alternatively, the openings 446a to 446c may be spaces without providing the refractive materials 444a to 444c. The light-emitting layer 412 and the counter electrode 413 may be selectively formed using a droplet discharge method, or may be formed using a printing method such as screen printing or gravure printing. Here, the light emitting layer 412 and the counter electrode 413 are selectively formed by using a droplet discharge method. In the case of forming a display device capable of color display, light emitting layers that emit three colors of R, G, and B are selectively formed. In this manner, by forming the light-emitting layer using a droplet discharge method or a printing method, wasteful materials can be reduced, so that cost can be reduced.

  As the light-emitting layer 412, an organic compound material such as a low molecular weight material, a medium molecular weight material (including oligomers and dendrimers), or a high molecular weight material is formed as a single layer or a stacked structure, a vapor deposition method using a vapor deposition mask, or an inkjet method. It can be formed by a spin coating method or the like. In addition, the light-emitting layer 412 can be provided with a single layer or a stacked structure using an inorganic compound material. Generally, the former is called an organic EL element and the latter is called an inorganic EL element depending on whether the light emitting material used for the light emitting layer is an organic compound or an inorganic compound. May be.

  Inorganic EL elements are classified into a dispersion-type inorganic EL element and a thin-film inorganic EL element depending on the element structure. The former has a light emitting layer in which particles of a light emitting material are dispersed in a binder, and the latter has a light emitting layer made of a thin film of a fluorescent material. However, the mechanism is common, and light emission can be obtained by collision excitation of the base material or emission center by electrons accelerated by a high electric field. In this embodiment, when an inorganic EL element is used, either a dispersion-type inorganic EL element or a thin-film inorganic EL element may be applied.

  Next, after an insulating film 435 is formed so as to cover the counter electrode 413, sealing is performed by using the substrate 151 and the substrate 159 (FIG. 27C).

  Through the above steps, a flexible display device can be formed. Note that the display device illustrated in FIG. 25A is manufactured by forming the insulating films 435 in FIG. 27C without forming the refractive materials 444a to 444c in FIG. 27B. be able to.

  Note that here, as a method for manufacturing a display device, a method in which an element formation layer is provided over a substrate having flexibility such as glass after being provided with an element formation layer is described. The manufacturing method of the display device of the present invention is not limited to this. For example, after providing an element formation layer on a glass substrate or a semiconductor substrate such as Si, the glass substrate or the semiconductor substrate such as Si may be thinned by grinding or polishing. In this case, a flexible display device can be manufactured without peeling.

  Next, applications of a display device manufactured using the above-described flexible semiconductor device will be described with reference to drawings.

  FIG. 28A shows a display, which includes a main body 4101, a support base 4102, and a display portion 4103. The display portion 4103 is formed using a flexible substrate, and a lightweight and thin display can be realized. In addition, the display portion 4103 can be curved, and the display portion 4103 can be detached from the support base 4102 and hung on a wall. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4103, a circuit, or the like, a flexible display can be manufactured.

  FIG. 28B illustrates a large display that can be wound, which includes a main body 4201 and a display portion 4202. Since the main body 4201 and the display portion 4202 are formed using a flexible substrate, the display can be folded and rolled up and carried. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4202, a circuit, or the like, a flexible, lightweight, and thin large display can be manufactured. it can.

  FIG. 28C illustrates a sheet type computer which includes a main body 4401, a display portion 4402, a keyboard 4403, a touch pad 4404, an external connection port 4405, a power plug 4406, and the like. The display portion 4402 is formed using a flexible substrate, and a lightweight and thin computer can be realized. Further, by providing a storage space in the power plug 4406, the display portion 2402 can be wound and stored. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4402, a circuit, or the like, a flexible, lightweight, and thin computer can be manufactured.

  FIG. 28D illustrates a display device having a large display portion of 20 to 80 inches, which includes a main body 4300, a keyboard 4301 which is an operation portion, a display portion 4302, a speaker 4303, and the like. In addition, the display portion 4302 is formed using a flexible substrate, and the keyboard 4301 can be detached and the main body 4300 can be folded and rolled up to be carried. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4302, a circuit, or the like, a flexible, lightweight, and thin large-sized display device can be manufactured. it can.

  FIG. 28E illustrates an electronic book which includes a main body 4501, a display portion 4502, operation keys 4503, and the like. A modem may be built in the main body 4501. The display portion 4502 is formed using a flexible substrate and can be bent. Further, the display portion 4502 can display moving images as well as still images such as characters. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4502, a circuit, or the like, a flexible, lightweight, and thin electronic book can be manufactured. .

  FIG. 28F illustrates an IC card, which includes a main body 4601, a display portion 4602, a connection terminal 4603, and the like. Since the display portion 4602 has a lightweight and thin sheet shape using a flexible substrate, the display portion 4602 can be attached to the surface of the card. In addition, when the IC card can receive data without contact, information acquired from the outside can be displayed on the display portion 4602. By using the flexible semiconductor device described in this embodiment mode or the above embodiment mode for the display portion 4602, a circuit, or the like, a flexible, lightweight, and thin IC card can be manufactured. .

  As described above, the application range of the present invention is extremely wide and can be used for electronic devices and information display means in various fields. Note that this embodiment mode can be freely combined with the above embodiment modes.

FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. FIG. 11 illustrates an example of a semiconductor device of the invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 11 illustrates an example in which a semiconductor device of the present invention is applied to a display device. FIG. 11 illustrates an example in which a semiconductor device of the present invention is applied to a display device. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. 4A and 4B illustrate an example of a method for manufacturing a semiconductor device of the present invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention. FIG. 11 illustrates an example of a semiconductor device of the invention. FIG. 13 illustrates an example of a usage pattern of a semiconductor device of the invention.

Explanation of symbols

131 opening 132a opening 132b opening 150 semiconductor device 151 substrate 152a integrated circuit 152b integrated circuit 152c integrated circuit 152d integrated circuit 153 refracted portion 154 insulating film 155 transistor 156 insulating film 157 insulating film 158 insulating film 159 substrate 161a block 161b block 161c Block 161d block 161e block 161f block 162a refracting portion 162b refracting portion 162c refracting portion 163 refracting material 164a refracting material 164b refracting material 165a space 165b space 170 substrate 171 release layer 172a opening 172b opening 173a refracting material 173b refraction material 175 thin film transistor 176 Part 177 Film 178a Space 178b Space 179a Refractive material 179b Refractive material 180 Element formation layer 81a refracting material 181b refracting material 182a opening 182b opening 183 opening 184a opening 184b opening 185 opening 186a opening 186b opening 187 opening 188a refraction material 188b refraction material 189a refraction material 189b refraction material 190 belt conveyor 191 supply Roll 192 Sealing roll 193 Cutting means 194 Conductive film 195 Opening 196 Protective film 197 Recess 198 Part 251 Transistor 252a Dummy transistor 252b Dummy transistor 253a Dummy transistor 253b Dummy transistor 254a Dummy transistor 254b Dummy transistor 254c Dummy transistor 254d Dummy transistor 254e Dummy transistor 254f Dummy transistor 254g Dummy transistor 2 54h dummy transistor 255 dummy pattern 260 substrate 261a integrated circuit 261b integrated circuit 261c integrated circuit 261d integrated circuit 262 wiring 263 conductive film 265 conductive film 266 resin 267 conductive particle 270 single crystal silicon substrate 271 field effect transistor 272 terminal unit 272a terminal unit 272b Terminal portion 273 Recess 274 Insulating film 275 Conductive film 281 Film 282 Material 283 Uneven pattern 284 Space 285 Conductive film 286 Refraction portion 291 Conductive film 292 Insulating film 293 Conductive film 294 Substrate 295 Resin 296 Conductive film 297 Conductive film 298 Conductive film 80 RFID
81 power supply circuit 82 clock generation circuit 83 data demodulation circuit 84 data modulation circuit 85 control circuit 86 storage circuit 87 antenna 88 reader / writer 320 reader / writer 321 display unit 322 product 323 RFID
325 RFID
326 Product 400 Substrate 401 Pixel area 402 Drive circuit 403 Drive circuit 404 Refraction portion 405a Wiring 405b Wiring 406a Wiring 406b Wiring 407 Pixel portion 410
411 Pixel electrode 412 Light emitting layer 413 Counter electrode 421 Thin film transistor 422 Thin film transistor 423 Wiring 431 Insulating film 432 Insulating film 433 Insulating film 434 Insulating film 435 Insulating film 441 Opening 442 Refractive substance 443 Opening 444 Refractive substance 444a Refraction substance 444c Refraction substance 444c Refraction Substance 445 Element formation layer 446a Opening portion 446b Opening portion 446c Opening portion 4101 Main body 4102 Support base 4103 Display portion 4201 Main body 4202 Display portion 4300 Main body 4301 Keyboard 4302 Display portion 4303 Speaker 4401 Main body 4402 Display portion 4403 Keyboard 4404 Touch pad 4405 External connection port 4406 Power plug 4501 Main body 4502 Display unit 4503 Operation key 4601 Main body 4602 Display unit 4603 Connection terminal

Claims (12)

Having a flexible substrate;
A first transistor on the substrate;
Having a second transistor on the substrate;
An insulating film on the first transistor and the second transistor;
The insulating film has an opening;
The opening is located between the first transistor and the second transistor;
Having a first metal in the opening;
Having a second metal on the insulating film;
The first transistor or the second transistor has a region overlapping with the second metal,
The first metal is any one of Au, Ag, Cu, or Al,
The semiconductor device, wherein the second metal is any one of W, Ti, Mo, Ni, Ta, or Mn. Having a flexible substrate;
Having a first circuit on the substrate;
Having a second circuit on the substrate;
An insulating film on the first circuit and the second circuit;
The insulating film has an opening;
The opening is located between the first circuit and the second circuit;
Having a first metal in the opening;
Having a second metal on the insulating film;
The first circuit or the second circuit has a region overlapping with the second metal,
The first metal is any one of Au, Ag, Cu, or Al,
The semiconductor device, wherein the second metal is any one of W, Ti, Mo, Ni, Ta, or Mn. In claim 1 or claim 2,
Having a third metal under the substrate;
The third metal has a region overlapping the second metal;
The semiconductor device, wherein the third metal is any one of W, Ti, Mo, Ni, Ta, or Mn. In any one of Claims 1 thru | or 3,
A plurality of recesses on the lower surface of the substrate;
The semiconductor device according to claim 1, wherein the opening has a region overlapping with the plurality of recesses. Have a film,
Having a first transistor on the film;
Having a second transistor on the film;
An insulating film on the first transistor and the second transistor;
The insulating film has an opening;
The opening is located between the first transistor and the second transistor;
Having a first metal in the opening;
Having a second metal on the insulating film;
The first transistor or the second transistor has a region overlapping with the second metal,
The first metal is any one of Au, Ag, Cu, or Al,
The semiconductor device, wherein the second metal is any one of W, Ti, Mo, Ni, Ta, or Mn. Have a film,
Having a first circuit on the film;
Having a second circuit on the film;
An insulating film on the first circuit and the second circuit;
The insulating film has an opening;
The opening is located between the first circuit and the second circuit;
Having a first metal in the opening;
Having a second metal on the insulating film;
The first circuit or the second circuit has a region overlapping with the second metal,
The first metal is any one of Au, Ag, Cu, or Al,
The semiconductor device, wherein the second metal is any one of W, Ti, Mo, Ni, Ta, or Mn. In claim 5 or claim 6,
Having a third metal under the film;
The third metal has a region overlapping the second metal;
The semiconductor device, wherein the third metal is any one of W, Ti, Mo, Ni, Ta, or Mn. In any one of Claim 5 thru | or 7,
A plurality of recesses on the lower surface of the film;
The semiconductor device according to claim 1, wherein the opening has a region overlapping with the plurality of recesses. Have a plastic substrate,
A first transistor on the plastic substrate;
A second transistor on the plastic substrate;
An insulating film on the first transistor and the second transistor;
The insulating film has an opening;
The opening is located between the first transistor and the second transistor;
Having a first metal in the opening;
Having a second metal on the insulating film;
The first transistor or the second transistor has a region overlapping with the second metal,
The first metal is any one of Au, Ag, Cu, or Al,
The semiconductor device, wherein the second metal is any one of W, Ti, Mo, Ni, Ta, or Mn. Have a plastic substrate,
Having a first circuit on the plastic substrate;
A second circuit on the plastic substrate;
An insulating film on the first circuit and the second circuit;
The insulating film has an opening;
The opening is located between the first circuit and the second circuit;
Having a first metal in the opening;
Having a second metal on the insulating film;
The first circuit or the second circuit has a region overlapping with the second metal,
The first metal is any one of Au, Ag, Cu, or Al,
The semiconductor device, wherein the second metal is any one of W, Ti, Mo, Ni, Ta, or Mn. In claim 9 or claim 10,
Having a third metal under the plastic substrate;
The third metal has a region overlapping the second metal;
The semiconductor device, wherein the third metal is any one of W, Ti, Mo, Ni, Ta, or Mn. In any one of Claims 9 to 11,
A plurality of recesses on the lower surface of the plastic substrate;
The semiconductor device according to claim 1, wherein the opening has a region overlapping with the plurality of recesses.

Images