JP5046572B2 - 一酸化ニオブ - Google Patents
一酸化ニオブ Download PDFInfo
- Publication number
- JP5046572B2 JP5046572B2 JP2006175411A JP2006175411A JP5046572B2 JP 5046572 B2 JP5046572 B2 JP 5046572B2 JP 2006175411 A JP2006175411 A JP 2006175411A JP 2006175411 A JP2006175411 A JP 2006175411A JP 5046572 B2 JP5046572 B2 JP 5046572B2
- Authority
- JP
- Japan
- Prior art keywords
- niobium
- niobium monoxide
- monoxide
- capacitor
- peak
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G33/00—Compounds of niobium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G9/00—Electrolytic capacitors, rectifiers, detectors, switching devices, light-sensitive or temperature-sensitive devices; Processes of their manufacture
- H01G9/004—Details
- H01G9/04—Electrodes or formation of dielectric layers thereon
- H01G9/048—Electrodes or formation of dielectric layers thereon characterised by their structure
- H01G9/052—Sintered electrodes
- H01G9/0525—Powder therefor
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
- C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/12—Surface area
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/14—Pore volume
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2006/00—Physical properties of inorganic compounds
- C01P2006/40—Electric properties
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Inorganic Chemistry (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Description
Claims (4)
- 粒子から構成された多孔質構造の一酸化ニオブであって、
X線回折による回折ピークのうち、(111)面に相当するピークまたは(200)面に相当するピークの半値幅が、0.21°〜1.0°であり、
(200)面に相当するピーク強度に対する、(111)面に相当するピーク強度Bの比B/Aが、0.80〜1.15である一酸化ニオブ。 - 比表面積(BET値)が2.0m2/g〜50.0m2/gである請求項1に記載の一酸化ニオブ。
- かさ体積に対する空間の割合を表す空隙率が、水銀圧入法によって測定した値で40%以上である請求項1または請求項2に記載の一酸化ニオブ。
- 熱分析による酸素含有量が14.0重量%〜15.3重量%である請求項1〜請求項3のいずれか1項に記載の一酸化ニオブ。
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006175411A JP5046572B2 (ja) | 2006-06-26 | 2006-06-26 | 一酸化ニオブ |
| BRPI0711243-2A BRPI0711243A2 (pt) | 2006-06-26 | 2007-06-26 | monóxido de nióbio |
| US12/303,127 US7988945B2 (en) | 2006-06-26 | 2007-06-26 | Niobium monoxide |
| DE112007001510T DE112007001510T5 (de) | 2006-06-26 | 2007-06-26 | Niobmonoxid |
| CNA2007800232793A CN101472844A (zh) | 2006-06-26 | 2007-06-26 | 一氧化铌 |
| PCT/JP2007/062774 WO2008001754A1 (en) | 2006-06-26 | 2007-06-26 | Niobium monoxide |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006175411A JP5046572B2 (ja) | 2006-06-26 | 2006-06-26 | 一酸化ニオブ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2008001582A JP2008001582A (ja) | 2008-01-10 |
| JP5046572B2 true JP5046572B2 (ja) | 2012-10-10 |
Family
ID=38845518
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006175411A Expired - Fee Related JP5046572B2 (ja) | 2006-06-26 | 2006-06-26 | 一酸化ニオブ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7988945B2 (ja) |
| JP (1) | JP5046572B2 (ja) |
| CN (1) | CN101472844A (ja) |
| BR (1) | BRPI0711243A2 (ja) |
| DE (1) | DE112007001510T5 (ja) |
| WO (1) | WO2008001754A1 (ja) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106673047B (zh) * | 2016-12-29 | 2018-05-08 | 中国科学院上海硅酸盐研究所 | 一种制备过渡金属一氧化物粉体、靶材和薄膜的方法 |
| CN110963529B (zh) * | 2018-09-30 | 2021-12-07 | 中国科学院上海硅酸盐研究所 | 一种纯相的铌的低价态氧化物纳米粉体及其制备方法和应用 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3305832B2 (ja) * | 1993-10-07 | 2002-07-24 | 三井金属鉱業株式会社 | 粒状酸化タンタルの製造方法 |
| US6391275B1 (en) * | 1998-09-16 | 2002-05-21 | Cabot Corporation | Methods to partially reduce a niobium metal oxide and oxygen reduced niobium oxides |
| KR100524166B1 (ko) * | 2001-05-15 | 2005-10-25 | 쇼와 덴코 가부시키가이샤 | 일산화 니오브분말, 일산화 니오브 소결체 및 일산화니오브 소결체를 사용한 콘덴서 |
| JP3907102B2 (ja) * | 2002-03-25 | 2007-04-18 | 三井金属鉱業株式会社 | 粒状酸化ニオブの製造方法 |
| JP4519431B2 (ja) * | 2003-08-26 | 2010-08-04 | 株式会社東芝 | 酸化膜形成用スパッタリングターゲットとそれを用いた酸化膜の製造方法 |
| BR0304252B1 (pt) * | 2003-09-25 | 2013-05-14 | processo de produÇço de pà de monàxido de niàbio, monàxido de niàbio, e, capacitor. | |
| JP4271060B2 (ja) * | 2004-03-01 | 2009-06-03 | 三井金属鉱業株式会社 | 酸化ニオブ粉末 |
| JP2006206428A (ja) * | 2004-12-27 | 2006-08-10 | Mitsui Mining & Smelting Co Ltd | ニオブ酸化物及びその製造方法 |
| JP4670097B2 (ja) * | 2005-04-27 | 2011-04-13 | Agcセラミックス株式会社 | ターゲットおよび該ターゲットによる高屈折率膜の製造方法 |
-
2006
- 2006-06-26 JP JP2006175411A patent/JP5046572B2/ja not_active Expired - Fee Related
-
2007
- 2007-06-26 BR BRPI0711243-2A patent/BRPI0711243A2/pt not_active IP Right Cessation
- 2007-06-26 CN CNA2007800232793A patent/CN101472844A/zh active Pending
- 2007-06-26 WO PCT/JP2007/062774 patent/WO2008001754A1/ja not_active Ceased
- 2007-06-26 US US12/303,127 patent/US7988945B2/en not_active Expired - Fee Related
- 2007-06-26 DE DE112007001510T patent/DE112007001510T5/de not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008001754A1 (en) | 2008-01-03 |
| BRPI0711243A2 (pt) | 2011-08-30 |
| CN101472844A (zh) | 2009-07-01 |
| US7988945B2 (en) | 2011-08-02 |
| DE112007001510T5 (de) | 2009-05-07 |
| JP2008001582A (ja) | 2008-01-10 |
| US20100267545A1 (en) | 2010-10-21 |
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