JP5053930B2 - Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same - Google Patents

Description

  The present invention relates to an epoxy resin composition for semiconductor encapsulation used for encapsulating semiconductors in electrical / electronic components, general-purpose semiconductor devices, optical semiconductor devices, and the like, and a semiconductor device using the same.

Conventionally, epoxy that can be mass-produced as a sealing material for semiconductors in electrical / electronic parts, general-purpose semiconductor devices, optical semiconductor devices, etc. in terms of adhesion, moisture resistance, electrical insulation, heat resistance, transparency, etc. A resin composition is used (see, for example, Patent Document 1-2). In recent years, as semiconductors have advanced in functionality, semiconductor devices having a finer PKG structure have been developed. As a result, wires have become thinner and longer, and a resin composition having a reduced viscosity is required as a sealing material. . However, such a low-viscosity resin composition has a problem in that the sealing material causes blocking because the melting point decreases as the viscosity decreases. To solve this problem, at present, the sealing material is managed at an appropriate temperature and humidity so that blocking does not occur, and when blocking occurs, it is actually re-pulverized by human hands.
JP 2008-74930 A JP 2007-169493 A

  Since the blocking problem significantly deteriorates the powder processability and workability of the sealing material, it makes development of a low-viscosity resin composition difficult from the viewpoint of stable productivity.

  This invention is made | formed in view of the situation as mentioned above, and makes it a subject to provide the epoxy resin composition for semiconductor sealing excellent in the low viscosity and the blocking resistance, and a semiconductor device using the same. .

  The present invention is characterized by the following in order to solve the above problems.

  1stly, the epoxy resin composition for semiconductor sealing of this invention is an epoxy resin composition for semiconductor sealing which contains an epoxy resin, a hardening | curing agent, and an inorganic filler as an essential component, The said epoxy resin is following Formula ( 1)

In look-containing bisphenol F type epoxy resin having a structure represented, the bisphenol F type epoxy resin is blended in an amount of 2 to 15% by weight relative to the epoxy resin composition the total amount, and the epoxy resin the total amount in a proportion of 25 to 100 wt%, wherein the curing agent is characterized in containing Mukoto a phenol novolak resin and biphenyl aralkyl resin.

  Second, as a semiconductor device, a semiconductor element is sealed with a cured body of the first semiconductor sealing epoxy resin composition.

  According to the first invention, in the epoxy resin composition for semiconductor encapsulation containing an epoxy resin, a curing agent and an inorganic filler as essential components, the epoxy resin has a structure represented by the formula (1). By including a bisphenol F-type epoxy resin, blocking can be suppressed while realizing a low viscosity. As a result, the powder processability and workability become easier, and the moldability is high, and the productivity can be effectively improved.

  The remarkable effects as described above are practically realized as the semiconductor device according to the second aspect of the present invention, and even a semiconductor device having a finer and longer wire can be obtained with good quality.

  The present invention has the features as described above, and the best mode for carrying out the present invention will be described below.

  The epoxy resin composition for semiconductor encapsulation of the present invention (hereinafter also simply referred to as “epoxy resin composition”) contains an epoxy resin, a curing agent and an inorganic filler as essential components.

  The epoxy resin used in the present invention contains a bisphenol F-type epoxy resin having a structure represented by the formula (1) as an essential component, thereby realizing a low viscosity of the epoxy resin composition and further blocking. Can be suppressed. The bisphenol F type epoxy resin having the structure represented by the formula (1) may be a commercially available product or a synthesized one. In the examples described later, YSLV-80XY manufactured by Toto Kasei Co., Ltd. is used. .

  The said epoxy resin is mix | blended, for example in the ratio of 2-15 mass% with respect to the epoxy resin composition whole quantity, especially 6-15 mass%. The bisphenol F-type epoxy resin having the structure represented by the above formula (1) is used together with other epoxy resins as the entire epoxy resin in the epoxy resin composition or as a part thereof, for example, 25 It is contained at a ratio of ˜100% by mass. When the bisphenol F type epoxy resin having the structure represented by the formula (1) is too small, the effect of the bisphenol F type epoxy resin cannot be sufficiently exhibited, and the viscosity of the epoxy resin composition is reduced or blocked. It may not be possible to suppress it.

  The other epoxy resin used together with the bisphenol F-type epoxy resin having the structure represented by the formula (1) may be various epoxy resins generally used for semiconductor encapsulation, and is not particularly limited. For example, biphenyl type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol type epoxy resin other than bisphenol F type epoxy resin having the structure represented by the above formula (1), stilbene type epoxy resin, triphenolmethane Type epoxy resin, phenol aralkyl type epoxy resin, naphthol type epoxy resin, naphthalene type epoxy resin and the like. These are not limited to one type, and a plurality of types may be used in combination. In particular, from the viewpoint of blocking resistance, it is desirable to use a biphenyl aralkyl type epoxy resin in combination.

  The curing agent used in the present invention is not particularly limited as long as it is a resin having a phenolic hydroxyl group that reacts with an epoxy resin. Specific examples include various polyhydric phenol compounds and naphthol compounds such as phenol novolak resins, cresol novolak resins, phenol aralkyl resins, biphenyl aralkyl resins, and naphthol skeleton-containing phenol resins such as naphthol aralkyl resins. These are not limited to one type, and a plurality of types may be used in combination. The content of the resin having a phenolic hydroxyl group is not particularly limited. For example, the equivalent ratio of the epoxy resin to the resin having a phenolic hydroxyl group (OH equivalent / epoxy equivalent) is in the range of 0.5 to 1.5, preferably It can mix | blend so that it may become the range of 0.8-1.2. If the equivalent ratio is outside the range of 0.5 to 1.5, the curing characteristics of the epoxy resin composition may be reduced, or the moisture resistance of the cured product after molding may be reduced.

  The inorganic filler used in the present invention is not particularly limited as long as it is generally used for semiconductor encapsulation. Examples thereof include fused silica, crystalline silica, alumina, silicon nitride, and aluminum nitride. Although content of an inorganic filler is not specifically limited, For example, it can be 80-93 mass% with respect to the epoxy resin composition whole quantity. This effectively reduces the hygroscopicity of the epoxy resin composition and improves the reflow crack resistance. If the amount of the inorganic filler is too small, characteristics such as thermal conductivity and coefficient of thermal expansion may be deteriorated. On the other hand, if it is excessive, fluidity and mold filling property during molding may be deteriorated.

  Moreover, in order for the epoxy resin composition of this invention to accelerate | stimulate the hardening reaction of an epoxy resin, it is desirable to contain a hardening accelerator. The curing accelerator is not particularly limited as long as it accelerates the reaction between the epoxy group and the phenolic hydroxyl group. Examples thereof include organic phosphines such as tetraphenylphosphonium / tetraphenylborate and triphenylphosphine, tertiary amines such as diazabicycloundecene, and imidazoles such as 2-methylimidazole and 2-phenylimidazole. These are not limited to one type, and a plurality of types may be used in combination.

  Furthermore, the epoxy resin composition of this invention can mix | blend components other than the above in the range which does not impair the effect of this invention. For example, aminosilanes such as γ-aminopropyltriethoxysilane and N-phenyl-γ-aminopropyltrimethoxysilane, mercaptosilanes such as γ-mercaptopropyltrimethoxysilane, and glycids such as γ-glycidoxypropyltrimethoxysilane Examples include silane coupling agents such as xysilane, flame retardants such as antimony trioxide, colorants such as carbon black, and silicone flexible agents. Moreover, mold release agents, such as carnauba wax, fatty acid amide, stearic acid, montanic acid, fatty acid ester, and carboxyl group-containing polyolefin, may be blended.

  The epoxy resin composition for semiconductor encapsulation of the present invention as described above includes an epoxy resin containing a bisphenol F type epoxy resin having a structure represented by the above formula (1), a curing agent and an inorganic filler, and further if necessary. It can be prepared by blending various additives, uniformly mixing them with a mixer or blender, and then kneading them with a heating roll or kneader. Here, the blending order of the above components is not particularly limited. Further, the kneaded product can be cooled and solidified as necessary, pulverized into pellets or powder, or tableted and used. The epoxy resin composition for semiconductor encapsulation such as pellets, powders and tablets obtained here is excellent in blocking resistance.

  And a semiconductor device can be produced by carrying out sealing molding using the epoxy resin composition for semiconductor sealing prepared in this way. For example, a lead frame on which a semiconductor element such as an IC is mounted is set in a transfer molding die, and transfer molding is performed to manufacture a semiconductor device in which the semiconductor element is sealed with an epoxy resin composition for semiconductor sealing.

  Hereinafter, an example is shown and an embodiment of this invention is described in more detail. Of course, the present invention is not limited to the following examples, and it goes without saying that various aspects are possible in detail.

<Examples 1-5 and Comparative Examples 1-4>
Each component is blended in the blending amounts shown in Table 1, mixed for 30 minutes with a blender, homogenized, kneaded and melted with two rolls heated to 80 ° C., extruded, cooled, and then adjusted to a predetermined particle size with a pulverizer. The pulverized epoxy resin composition for semiconductor encapsulation was obtained by pulverization.

In addition, as a compounding material of the epoxy resin composition in Table 1, the following were used.
Epoxy resin 1: Bisphenol F-type epoxy resin having the structure represented by the above formula (1) (Tosuto Kasei Co., Ltd. YSLV-80XY)
Epoxy resin 2: biphenyl type epoxy resin (Japan Epoxy Resin Co., Ltd. YX4000H)
Epoxy resin 3: biphenyl type epoxy resin (Japan Epoxy Resin Co., Ltd. YL-6121H)
Epoxy resin 4: bisphenol A type epoxy resin (Japan Epoxy Resin Co., Ltd. YL-6810)
Hardener 1: Phenol novolac resin (DL92 manufactured by Meiwa Kasei Co., Ltd.)
Curing agent 2: Phenol novolac resin (DL65 manufactured by Meiwa Kasei Co., Ltd.)
Curing agent 3: biphenyl aralkyl resin (Maywa Kasei Co., Ltd. MEH7851SS)
Inorganic filler: fused silica (manufactured by Denki Kagaku Kogyo Co., Ltd., FB940)
Coupling agent: Shin-Etsu Chemical Co., Ltd., KBM8020
Mold release agent: Carnauba wax (F1-100, manufactured by Dainichi Chemical Co., Ltd.)
Colorant: Carbon Black (MA600MJ manufactured by Mitsubishi Chemical Corporation)
Curing accelerator 1: KXM manufactured by Meiwa Kasei Co., Ltd.
Curing accelerator 2: Shikoku Kasei Co., Ltd. 2P4MHZ
The evaluation method of the above-mentioned powdery epoxy resin composition for encapsulating a semiconductor is as follows.
<Measurement of slit viscosity (Pa · s)>
The slit viscosity was measured using a rectangular viscometer (manufactured by Matsushita Electric Works Co., Ltd.). Pressure sensors S ₁ and S ₂ are provided on the upstream side and the downstream side of the long slit of width W and thickness D (distance L between sensors), the mold temperature is set to 175 ° C., injection pressure: 10 MPa, injection speed Q: 1.3 mm / s, the pot holding time under conditions of 10s by implanting the semiconductor encapsulating epoxy resin composition into the slit from the upstream of the pressure sensor S ₁ was allowed to pass through the slit, by the pressure sensor S _1, S ₂ The pressure loss ΔP was measured, and the slit viscosity η (Pa · s) was determined from the following formula.

ΔP = (12η / WD ³ ) QL
<Evaluation of blocking properties>
3 kg of the above-mentioned powdery epoxy resin composition for encapsulating semiconductors is allowed to stand in an environment of 25 ° C. (with silica gel) for 24 hours, and then the blocking amount is measured to block the total amount of the epoxy resin composition for semiconductor encapsulation used in the test. The blocking rate (%) was determined from the amount.

  The results are shown in Table 1.

  As seen in Table 1, an epoxy resin composition for semiconductor encapsulation containing an epoxy resin containing a bisphenol F-type epoxy resin having a structure represented by the formula (1), a curing agent and an inorganic filler as essential components ( Examples 1 to 5) were confirmed to have low viscosity and excellent blocking resistance.

  On the other hand, the epoxy resin composition for semiconductor encapsulation that does not use the bisphenol F-type epoxy resin having the structure represented by the formula (1) (Comparative Examples 1 to 4) is at least one of low viscosity and blocking resistance. It was confirmed that either could not be realized.

Claims (2)

In the epoxy resin composition for semiconductor encapsulation containing an epoxy resin, a curing agent and an inorganic filler as essential components, the epoxy resin has the following formula (1):

In look-containing bisphenol F type epoxy resin having a structure represented, the bisphenol F type epoxy resin is blended in an amount of 2 to 15% by weight relative to the epoxy resin composition the total amount, and the epoxy resin the total amount in a proportion of 25 to 100 wt%, wherein the curing agent is a semiconductor encapsulating epoxy resin composition characterized contains Mukoto a phenol novolak resin and biphenyl aralkyl resin.   A semiconductor device, wherein a semiconductor element is sealed with a cured body of the epoxy resin composition for semiconductor sealing according to claim 1.