JP5059486B2 - Manufacturing method of module with built-in components - Google Patents

Description

The present invention relates to a method for producing a component built-modules in which electronic components are built.

  With recent downsizing, thinning, and high functionality of electronic devices, there is a demand for higher density mounting of electronic components mounted on printed circuit boards and higher functionality of circuit boards mounted with electronic components. It is getting stronger and stronger.

  Under such circumstances, a component built-in module has been proposed in which an electronic component is embedded in a built-in layer formed of an electrical insulating material including at least an inorganic filler and a thermosetting resin, and a circuit board is provided on at least one side (for example, , See Patent Document 1).

  In a component built-in module, an active component (for example, a semiconductor element) or a passive component (for example, a capacitor) mounted on the surface of a printed board is usually embedded in a built-in layer and three-dimensionally mounted.

  The basic configuration of the component built-in module will be described with reference to FIG.

  In the component built-in module 100, a semiconductor element 102 that is an active element and a chip component 103 that is a passive component are built in a built-in layer 101 made of an electrical insulating material. For example, the semiconductor element 102 is flip-chip mounted on the wiring pattern 104 of the circuit board 105. The built-in layer 101 is formed from a mixture containing at least an inorganic filler and a thermosetting resin. Circuit boards 105 provided with wiring patterns 104 are provided on both surfaces of the built-in layer 101.

  Although FIG. 7A illustrates a case where the circuit board 105 is provided on both sides, the circuit board 105 may be disposed only on one side. The electrical connection between the wiring patterns 104 at both ends of the built-in layer 101 is made by an inner via 106 made of a conductive resin.

With the above configuration, the area of the substrate can be reduced. In addition, since the degree of freedom for arranging electronic components is higher than in the case of surface mounting, improvement of high frequency characteristics can be expected by optimizing the wiring between the electronic components.
Japanese Patent No. 3547423

  However, in consideration of actual use, when the component built-in module 100 is not used, the temperature of the component built-in module 100 is about 25 ° C. which is room temperature, but when the semiconductor element 102 is driven, heat is generated, and the component built-in module 100 The temperature rises from 40 ° C to 120 ° C. Therefore, the component built-in module 100 is repeatedly exposed to a thermal history between 25 ° C. and 40 to 120 ° C. according to ON / OFF.

  FIG. 7A shows a state where the component built-in module 100 is at room temperature (about 25 ° C.). When the temperature rises from this state, the built-in layer 101 and the circuit board 105 are thermally expanded. For example, when the thermal expansion coefficient of the built-in layer 101 is larger than the thermal expansion coefficient of the circuit board 105, the built-in layer 101 tends to expand more than the circuit board 105 as shown in FIG. However, since the component that is to be expanded in the lateral direction in the circuit board 105 is actually restricted, the built-in layer 101 cannot expand sufficiently in the horizontal direction and greatly expands in the vertical direction (see arrow Z ′) (FIG. 7). (C)).

  At this time, a large force acts on the connection portions 107a, b, and c between the wiring pattern 104 and the inner via 106, the chip component 103, and the semiconductor element 102 in the direction of separating the connection (FIG. 7C). ).

  Therefore, when the thermal history between 25 ° C. and 40 to 120 ° C. is repeated, peeling of the connecting portion of the inner via 106, the chip component 103, and the semiconductor element 102 may occur, which adversely affects the quality of the connecting portion. Is affected.

The present invention is, considering the above problems of the conventional component built-in module, the quality of the connection portion and has an object to provide a method for producing better parts built modules.

In order to achieve the above object, the first present invention provides:
A mounting step of mounting electronic components on the wiring pattern of the first substrate;
A through hole is formed in a built-in layer that is formed of a mixture including an inorganic filler and an uncured thermosetting resin, and has a thermal expansion coefficient that is equal to or lower than the thermal expansion coefficient of the first substrate. An inner via forming step of filling the conductive resin and forming an inner via;
The first substrate is disposed so that the surface on which the electronic component is mounted faces one surface of the built-in layer, and the thermal expansion coefficient of the built-in layer after curing is set on the other surface of the built-in layer. Manufacture of a component built-in module comprising a second substrate having the above thermal expansion coefficient, and a heating / pressurizing step for heating and pressurizing the first substrate, the built-in layer, and the second substrate. method der is,
The thermal expansion coefficient of the conductive resin is larger than that of the built-in layer, the first substrate, and the second substrate,
In the heating / pressurizing step, the conductive resin is expanded from the built-in layer, and is a method for manufacturing a component built-in module that contacts and joins the wiring pattern of the first substrate.

The second aspect of the present invention is
The conductive resin is a method of manufacturing a component built-in module according to the first aspect of the present invention, which includes a thermosetting resin and copper powder.

The third aspect of the present invention
The said thermosetting resin is a manufacturing method of the component built-in module of 2nd this invention which is a liquid epoxy resin.

The fourth aspect of the present invention is
A mounting step of mounting electronic components on at least one wiring pattern of the substrate and the release carrier;
A through hole is formed in a built-in layer that is formed of a mixture containing an inorganic filler and an uncured thermosetting resin, and has a thermal expansion coefficient equal to or lower than the thermal expansion coefficient of the substrate, and the conductive resin is formed in the through hole. And forming an inner via, and forming an inner via,
The one of the substrate and the release carrier, to a plane that electronic components are mounted, one surface of the internal layer is arranged so as to face the other surface of the internal layer, the base Ita及 And the other of the release carriers, a heating / pressurizing step for heating and pressurizing the substrate, the built-in layer and the release carrier;
And a peeling process for peeling the release carrier.

According to the present invention, it is the quality of the connection portion to provide a method for producing better parts built modules.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following drawings, components having substantially the same function are denoted by the same reference numerals for the sake of brevity.

(Embodiment 1)
The component built-in module 1 according to the first embodiment of the present invention will be described with reference to FIGS. 1 and 2A and 2B. FIG. 1 is a front cross-sectional view schematically showing the configuration of the component built-in module 1 of the first embodiment. 2A and 2B are front sectional views for explaining the component built-in module 1 of the first embodiment.

  As shown in FIG. 1, the component built-in module 1 according to the present embodiment includes a built-in layer 11 formed of an electrical insulating material, and circuit boards 15 provided on both sides thereof. The built-in layer 11 is formed of an electrical insulating material that is a mixture containing at least an inorganic filler and a thermosetting resin. The circuit board 15 may be a printed board such as a build-up board, a glass epoxy board, an ALIVH board, a polyimide board, or a liquid crystal polymer board, or a board formed from a mixture of an inorganic filler and a thermosetting resin. .

  In the component built-in module 1 of the present embodiment, a semiconductor element 12 that is an active element and, for example, a chip component 13 that is a passive component are built in a built-in layer 11 made of an electrical insulating material. Examples of the chip component 13 include a chip inductor, a chip resistor, and a chip capacitor. The semiconductor element 12 is flip-chip mounted on the wiring pattern 14 of the circuit board 15, and a sealing resin 18 is filled between the semiconductor element 12 and the circuit board 15. In addition, the electrical connection between the wiring patterns 14 on both ends of the built-in layer 11 is made by the inner via 16 filled with the conductive resin 161. FIG. 1 also shows a connection portion 17a between the wiring pattern 14 and the inner via 16, a connection portion 17b between the wiring pattern 14 and the inner via 16, and a connection portion 17c between the wiring pattern 14 and the chip component 13. ing.

  Next, the thermal expansion coefficients of the built-in layer 11 and the circuit board 15 of the component built-in module 1 of the first embodiment will be described.

  In the first embodiment, the built-in layer 11 and the circuit are configured so that the thermal expansion coefficient (at room temperature) of the built-in layer 11 is equal to or less than the thermal expansion coefficient of the circuit board 15 so as to satisfy the following (formula 1). The material of the substrate 15 is adjusted. Since the thermal expansion coefficient changes depending on the temperature, the following description will be made with reference to the thermal expansion coefficient at room temperature, 25 ° C. (room temperature).

Thermal expansion coefficient of built-in layer 11 at 25 ° C. ≦ Coefficient of thermal expansion of circuit board 15 at 25 ° C. (Equation 1)
The thermal expansion coefficient of the built-in layer 11 can be adjusted, for example, by changing the type, size, shape, and addition amount of the inorganic filler contained in the built-in layer 11. In addition, examples of the inorganic filler include Al ₂ O ₃ , MgO, BN, AlN, and SiO ₂ . Among these, SiO ₂ is more preferable because it has a large effect of reducing the thermal expansion coefficient. As the size of the inorganic filler, it is preferable that the average particle size is 0.1 μm to 40 μm, and the shape may be spherical, needle-like, or irregular. The addition amount of the inorganic filler is preferably 70 to 95% by weight with respect to the built-in layer 11. In addition, the effect which lowers | hangs a thermal expansion coefficient becomes large, so that there is much addition amount of an inorganic filler.

  In addition, the thermal expansion coefficient of the built-in layer 11 can be adjusted by changing the type of the thermosetting resin of the built-in layer 11. As the thermosetting resin, for example, an epoxy resin, a phenol resin, a cyanate resin, a polyphenylene ether resin, or a mixture thereof can be used.

  In consideration of actual use, when the component built-in module 1 is not operated, the component built-in module reaches a room temperature of 25 ° C., and when the semiconductor element 12 is driven, the temperature of the component built-in module rises to 40 ° C. to 120 ° C. To do.

  Therefore, the component module is repeatedly exposed to a thermal history between 25 ° C. and 40 to 120 ° C. as the component built-in module is turned on and off.

  First, the case where the thermal expansion coefficient of the built-in layer 11 is smaller than the thermal expansion coefficient of the circuit board 15 will be described, and then the case where the internal layer 11 and the circuit board 15 have the same thermal expansion coefficient will be described.

  FIG. 1 shows a state where the component built-in module is at room temperature (25 ° C.). When the temperature rises due to driving of the semiconductor element 12, the built-in layer 11 and the circuit board 15 are thermally expanded.

  In the component built-in module 1 according to the first embodiment, when the thermal expansion coefficient of the built-in layer 11 is smaller than the thermal expansion coefficient of the circuit board 15, as shown in the schematic diagram of FIG. Tends to expand more than the built-in layer 11. In FIG. 2A, the internal layer 11 and the circuit board 15 are separated and exaggerated for the sake of explanation.

  Then, the built-in layer 11 is pulled in the horizontal direction by the circuit board 15, and as shown in FIG. 2 (b), the built-in layer 11 tries to compress in the vertical direction (see arrow Z in FIG. 2 (b)). Power will work.

  The extension of the built-in layer 11 in the vertical direction (see arrow Z ′ in FIG. 7C) is a component that tends to spread up and down due to thermal expansion (see arrow Z ′ in FIG. 7C) and a component that compresses (see FIG. 7). 2 (b) (see arrow Z), the vertical expansion due to thermal expansion is smaller than in the conventional case. Furthermore, when the compression effect exceeds the thermal expansion, the component built-in module 1 contracts in the vertical direction (see arrow Z).

  Accordingly, the force acting in the direction of separating the connection portions 17a, b, and c between the wiring pattern 14 and the inner via 16, the semiconductor element 12, and the chip component 13 can be weakened, and the reliability of the connection portion can be further increased. It becomes possible to improve. Furthermore, when the compression effect exceeds thermal expansion, a force acts in a direction that helps the connection.

  As a result, the reliability of the inner via 16, the semiconductor element 12, and the connection parts 17a, b, and c of the chip component 13 is better than the conventional one even for a thermal history between 25 ° C. and 40-120 ° C. Can be obtained (see FIG. 2B).

  On the other hand, in the component built-in module 1 according to the first embodiment, even when the thermal expansion coefficient of the built-in layer 11 is the same as the thermal expansion coefficient of the circuit board 15, the force acting in the direction of separating the connection portions 17 a, b, and c Can be suppressed. However, it is more preferable that the thermal expansion coefficient of the built-in layer 11 is smaller than that of the circuit board 15 because a force may act in the direction of helping connection.

  The built-in layer 11 of the first embodiment is a composite sheet made of a resin material in which at least a thermosetting resin and an inorganic filler are mixed, but if necessary, a composite of an inorganic filler and a thermosetting resin. In addition, a coupling agent, a dispersing agent, a colorant, and a release agent can be added.

  As described above, in the present embodiment, the case where the circuit board 15 is provided on both surfaces of the built-in layer 11 is described. However, the circuit board 15 is provided only on one surface of the built-in layer 11. There may be.

  Next, examples will be described.

(Example)
The thermal expansion coefficient of the circuit board 15 of the component built-in module 1 according to the first embodiment is adjusted to 16 (ppm / ° C.), and the thermal expansion coefficient of the built-in layer 11 is adjusted to 12 (ppm / ° C.). The component built-in module of the example in which the thermal expansion coefficient of the conductive resin 161 is adjusted to 50 (ppm / ° C.) and the thermal expansion coefficient of the sealing resin 18 is adjusted to 30 (ppm / ° C.) is n = 30 samples. prepared. These component built-in modules were subjected to a durability test by exposing them to a thermal history of 20 to 125 ° C. As a method of exposing to a thermal history, a method of immersing the component built-in module 1 in a liquid at 20 ° C. and 125 ° C. for 5 minutes using a liquid bath thermal shock tester was used. In addition, assuming that it is exposed to a heat history once a day, a test of 8000 cycles was conducted in consideration of a safety factor in a 10-year operation guarantee.

  During the test, after 1000, 2000, and 4000 cycles, and after 8000 cycles after the end of the test, the change in resistance value at DC was measured for each of the connection portions 17a, 17b, and 17c. A component built-in module having a resistance value of 100% or more with respect to the initial resistance value was determined as defective.

(Comparative example)
On the other hand, as compared with the component built-in module of the above embodiment, n = 30 samples of the component built-in module in which the thermal expansion coefficient of the built-in layer 11 is adjusted to a value different from 24 (ppm / ° C.) are the same as described above. The test was conducted by exposing it to the heat history of. In the component built-in module of the comparative example, since the circuit board 15 has a thermal expansion coefficient of 16 (ppm / ° C.), the thermal expansion coefficient of the built-in layer 11 is larger than the thermal expansion coefficient of the circuit board 15.

  The results of the above examples and comparative examples are shown in (Table 1).

  As a result of (Table 1), the component built-in module in which the thermal expansion coefficient of the built-in layer 11 is 12 (ppm / ° C.) smaller than the thermal expansion coefficient 16 (ppm / ° C.) of the circuit board 15 is connected portion 17a. B, c were found to be reliable.

(Embodiment 2)
The component built-in module according to the second embodiment of the present invention has the same basic configuration as that of the component built-in module 1 according to the first embodiment. However, unlike the first embodiment, the built-in layer 11 and the inner via 16 have the same structure. The relationship of the thermal expansion coefficient of the conductive resin 161 is further defined.

  In the component built-in module 1 of the second embodiment, in addition to the first embodiment, the thermal expansion coefficient of the built-in layer 11 at room temperature is the conductive resin in the inner via 16 so as to satisfy the formula (2). The material forming the built-in layer 11 and the conductive resin 161 is adjusted so as to be smaller than the thermal expansion coefficient of 161. As the conductive resin 161, a material obtained by kneading a thermosetting resin such as an epoxy resin, a phenol resin, or a cyanate resin using gold, silver, or copper powder as a conductive material can be used. In particular, copper is effective because it has good conductivity and less migration. In addition, a thermosetting resin and a liquid epoxy resin are stable in terms of heat resistance. The difference in coefficient of thermal expansion can be adjusted by the material and amount of the inorganic filler to be mixed. For example, fused silica (thermal expansion coefficient: 0.5 ppm / ° C.) can be added to the built-in layer 11, and copper powder (thermal expansion coefficient: 16 ppm / ° C.) can be added to the conductive resin 161. This addition amount can be about 50% by volume.

Thermal expansion coefficient of the built-in layer 11 at 25 ° C. ≦ thermal expansion coefficient of the conductive resin 161 in the inner via 16 at 25 ° C. (Expression 2)

Next, a case where the thermal expansion coefficient of the built-in layer 11 is smaller than the thermal expansion coefficient of the conductive resin 161 in the inner via 16 will be described, and then, the thermal expansion coefficient of the built-in layer 11 and the conductive resin 161 is equal. Will be described.

  When the temperature of the component built-in module 1 rises from room temperature (25 ° C.), the conductive resin 161 filled in the built-in layer 11 and the inner via 16 thermally expands.

  At this time, when the thermal expansion coefficient of the built-in layer 11 is smaller than the thermal expansion coefficient of the conductive resin 161, the conductive resin 161 expands in the vertical direction from the built-in layer 11 and tries to contact the wiring pattern 14. To do.

  As a result, even with respect to a thermal history between 25 ° C. and 40 to 120 ° C., better reliability can be obtained for the connecting portion 17a of the inner via 16 than in the past (see FIG. 1).

  On the other hand, when the thermal expansion coefficient of the built-in layer 11 is the same as the thermal expansion coefficient of the conductive resin 161 in the inner via 16, the same amount of the conductive resin 161 as that of the built-in layer 11 is also thermally expanded. On the other hand, a force for separating is not applied and good reliability can be obtained. However, it is more preferable that the coefficient of thermal expansion of the conductive resin 161 in the inner via 16 is larger than that in the built-in layer 11 because the force acts in the direction of assisting contact between the inner via 16 and the connection portion 17 a of the wiring pattern 14.

(Embodiment 3)
The component built-in module according to the third embodiment of the present invention has the same basic configuration as the component built-in module 1 according to the first embodiment, but unlike the first embodiment, the built-in layer 11 and the sealing resin 18 are different. The relationship of the thermal expansion coefficient is further defined.

  In the third embodiment, in addition to the first embodiment, the component built-in module 1 has a thermal expansion coefficient of the built-in layer 11 at room temperature equal to or lower than that of the sealing resin 18 so as to satisfy Equation (3). As described above, the material for forming the built-in layer 11 and the sealing resin 18 is adjusted.

Thermal expansion coefficient of built-in layer 11 at 25 ° C. ≦ Coefficient of thermal expansion of sealing resin 18 at 25 ° C. (Equation 3)

Next, the case where the thermal expansion coefficient of the internal layer 11 is smaller than the thermal expansion coefficient of the sealing resin 18 will be described, and then the case where the internal layer 11 and the sealing resin 18 have the same thermal expansion coefficient will be described.

  When the temperature of the component built-in module 1 rises from room temperature (25 ° C.), the built-in layer 11 and the sealing resin 18 are thermally expanded.

  At this time, when the thermal expansion coefficient of the built-in layer 11 is smaller than the thermal expansion coefficient of the sealing resin 18, the sealing resin 18 tends to expand in the longitudinal direction from the built-in layer 11. The thermal expansion of the stop resin 18 is suppressed.

  For this reason, the force for separating the contact of the connection portion 17b of the semiconductor element 12 is reduced, and the connection portion 17b of the semiconductor element 12 can be compared with the conventional structure even for a thermal history between 25 ° C. and 40 to 120 ° C. Good reliability can be obtained (see FIG. 1).

  On the other hand, even when the thermal expansion coefficient of the built-in layer 11 is the same as the thermal expansion coefficient of the sealing resin 18, the sealing resin also thermally expands by the same amount as the built-in layer 11. Therefore, good reliability can be obtained.

  However, when the thermal expansion coefficient of the built-in layer 11 is smaller than that of the sealing resin 18, since the expansion of the sealing resin in the vertical direction due to heat is relatively suppressed, the force to pull away from the connection portion 17b. Can be reduced, and good reliability can be obtained.

Further, the thermal expansion coefficient of the sealing resin 18 can be adjusted by changing the type, size, shape, and amount of the inorganic filler contained in the sealing resin 18, for example. Examples of the inorganic filler include Al ₂ O ₃ , MgO, BN, AlN, and SiO ₂ .

In addition, the thermal expansion coefficient of the sealing resin 18 can be adjusted by changing the thermosetting resin of the sealing resin 18. As the thermosetting resin, for example, an epoxy resin, a phenol resin, a cyanate resin, a polyphenylene ether resin, or a mixture thereof can be appropriately selected and used.
(Embodiment 4)
The component built-in module according to the fourth embodiment of the present invention has the same basic configuration as the component built-in module according to the first embodiment, but unlike the first embodiment, the heat of the sealing resin 18 and the circuit board 15 is the same. The relationship of the expansion coefficient is further defined.

  In the component built-in module 1 of the fourth embodiment, in addition to the first embodiment, the thermal expansion coefficient of the sealing resin 18 at room temperature is less than or equal to the thermal expansion coefficient of the circuit board 15 so as to satisfy (Equation 4). The materials for forming the circuit board 15 and the sealing resin 18 are adjusted so that

Thermal expansion coefficient of sealing resin 18 at 25 ° C. ≦ Coefficient of thermal expansion of circuit board 15 at 25 ° C. (Expression 4)

Next, the case where the thermal expansion coefficient of the sealing resin 18 is smaller than the thermal expansion coefficient of the circuit board 15 will be described, and then the case where the thermal expansion coefficients of the sealing resin 18 and the circuit board 15 are equal will be described.

  When the temperature of the component built-in module rises from room temperature (25 ° C.), the sealing resin 18 and the circuit board 15 are thermally expanded.

  At this time, in the component built-in module 1 according to the fourth embodiment, when the thermal expansion coefficient of the sealing resin 18 is smaller than the thermal expansion coefficient of the circuit board 15, the circuit board 15 has the sealing resin 18. Try to expand more.

  For this reason, the sealing resin 18 is pulled sideways on the circuit board 15, and a force to compress the sealing resin 18 in the vertical direction (see arrow Z in FIG. 2B) acts. That is, a force acts in a direction that helps the connection of the connection portion 17 b of the semiconductor element 12.

  The expansion of the sealing resin 18 in the vertical direction (see arrow Z ′ in FIG. 7C) is a component that tends to expand vertically due to thermal expansion (see arrow Z ′ in FIG. 7C) and a component that compresses (see FIG. 7C). Due to the sum of the amount and the sum (see arrow Z in FIG. 2B), the elongation in the vertical direction is smaller than in the case of conventional thermal expansion alone. Further, when the compression effect exceeds the thermal expansion, it contracts in the vertical direction (see arrow Z).

  As a result, the connection portion 17b of the semiconductor element 12 can obtain better reliability than the prior art even for a thermal history between 25 ° C. and 40 to 120 ° C.

  On the other hand, in the component built-in module 1 according to the fourth embodiment, even when the thermal expansion coefficient of the sealing resin 18 is the same as the thermal expansion coefficient of the circuit board 15, it is possible to suppress the force acting in the direction of separating the connection portion 17 b. However, it is more preferable that the thermal expansion coefficient of the sealing resin 18 is smaller than that of the circuit board 15 because a force may act in the direction of assisting the connection in the connection portion 17b.

  In the fourth embodiment, the feature that the thermal expansion coefficient of the sealing resin 18 is smaller than the thermal expansion coefficient of the circuit board 15 is added to the component built-in module of the first embodiment. It may be added to the three component built-in modules 1. In this case, the relationship of the thermal expansion coefficient (room temperature 25 ° C.) at 25 ° C. of the circuit board 15, the sealing resin 18 and the built-in layer 11 satisfies the relationship shown in the following (formula 5).

Thermal expansion coefficient of the built-in layer 11 at 25 ° C. ≦ thermal expansion coefficient of the sealing resin 18 at 25 ° C. ≦ thermal expansion coefficient of the circuit board 15 at 25 ° C. (Equation 5)

(Embodiment 5)
The component built-in module according to the fifth embodiment of the present invention has the same basic configuration as the component built-in module according to the first embodiment. However, unlike the first embodiment, the glass transition between the circuit board 15 and the built-in layer 11 is as follows. It further defines the temperature relationship.

  In the component built-in module 1 of the fifth embodiment, in addition to the first embodiment, the glass transition temperature (Tg) of the built-in layer 11 satisfies the glass transition temperature (Tg) of the circuit board 15 so as to satisfy (Equation 6). It has been adjusted to be above.

Glass transition temperature of built-in layer ≧ Glass transition temperature of circuit board 15 (Equation 6)

First, the case where the glass transition temperature of the built-in layer 11 is higher than the glass transition temperature of the circuit board 15 will be described, and then the case where the glass transition temperature of the built-in layer 11 is equal to the glass transition temperature of the circuit board 15 will be described.

  When the component built-in module 1 is subjected to a reflow process, when the temperature rises from room temperature (25 ° C.) to 240 ° C., the built-in layer 11 and the circuit board 15 are thermally expanded. The resin has a higher coefficient of thermal expansion above the glass transition temperature.

  In the component built-in module 1 of the fifth embodiment, when the glass transition temperature of the built-in layer 11 is higher than the glass transition temperature of the circuit board 15, the circuit board 15 having a lower glass transition temperature than the built-in layer 11. Try to expand thermally.

  For this reason, the built-in layer 11 is pulled sideways by the circuit board 15, and a force to compress in the vertical direction (see the arrow Z in FIG. 2B) acts more on the built-in layer 11. That is, a force acts in a direction that helps connection of the inner via 16, the semiconductor element 12, and the chip component 13.

  As a result, the connection portion 17a of the wiring pattern 14 and the inner via 16, the connection portion 17b of the semiconductor element 12, and the connection portion 17c of the chip component 13 are also conventionally applied to a thermal history between 25 ° C. and 240 ° C. Compared with this, good reliability can be obtained.

  On the other hand, in the component built-in module 1 of the fifth embodiment, even when the glass transition temperatures of the built-in layer 11 and the circuit board 15 are the same, the force acting in the direction of separating the connection portions 17a, b, c can be suppressed. However, it is more preferable that the glass transition temperature of the built-in layer 11 is higher than that of the circuit board 15 because a force may act in the direction of helping connection.

  In addition, as a method of adjusting the glass transition temperature of the internal layer 11, it can adjust by changing the main ingredient or hardening | curing agent of the thermosetting resin contained in the internal layer 11. FIG.

  Further, the case where the circuit board 15 is provided on both surfaces of the built-in layer 11 has been described. However, the circuit board 15 is provided only on the upper surface of the built-in layer 11 as in the component built-in module 2 shown in FIG. Alternatively, it may be provided on the lower surface of the built-in layer 11 as in the component built-in module 3 shown in FIG. 3B, and if it is provided on at least one side, the same effect can be exhibited.

  Further, the case where the built-in layer 11 has a single-stage structure has been described, but the same effect can be obtained even when the built-in layer 11 has two or more layers via the circuit board 15 as in the component built-in module 4 shown in FIG. Can be demonstrated.

  Furthermore, although the case where the built-in layer 11 has a single-stage configuration has been described, the same effect can be obtained even when there are two or more built-in layers 11 between the circuit boards 15 as in the component built-in module 5 shown in FIG. Demonstrate.

(Embodiment 6)
Below, the manufacturing method of the component built-in module in Embodiment 6 concerning this invention is demonstrated, mainly referring FIG. 4 (a) (b). The method for manufacturing the component built-in module according to the sixth embodiment corresponds to the method for manufacturing the component built-in module 1 according to the first embodiment. 4 (a) and 4 (b) are process cross-sectional views schematically showing the method for manufacturing the component built-in module according to the sixth embodiment of the present invention.

  First, as shown to Fig.4 (a), a through-hole is formed in the built-in layer 11 which processed the mixture of the inorganic filler and the uncured thermosetting resin into the sheet form, and further, the uncured state is formed in the through-hole. The inner via 16 is formed by filling the conductive resin 161. This step corresponds to an example of the inner via forming step of the present invention. Although not shown in FIG. 4A, a gap may be formed in advance in the built-in layer 11 where the semiconductor element 12 and the chip component 13 are built. The gap can be formed by a laser processing method, a die processing, or a punching processing.

  The built-in layer 11 is a paste-like kneaded material prepared by mixing an inorganic filler and a liquid thermosetting resin, or a paste prepared similarly by mixing a thermosetting resin whose viscosity is reduced with a solvent into an inorganic filler. It is formed by processing the kneaded material.

Here, the kind, size, shape of the inorganic filler contained in the built-in layer 11 is set so that the thermal expansion coefficient of the built-in layer 11 (at room temperature of 25 ° C.) is smaller than the thermal expansion coefficient of the circuit board 15. It is adjusted by changing the amount added. As the kind of the inorganic _filler, mention may be made of _{Al 2 O 3, MgO, BN} , AlN, and SiO _2. In addition, the inorganic filler preferably has an average particle size of 0.1 to 40 μm, and may have a spherical shape, a needle shape, an irregular shape, or the like. The addition amount of the inorganic filler is preferably 70 to 95% by weight with respect to the built-in layer 11. In addition, the thermal expansion coefficient of the built-in layer 11 can be adjusted by changing the thermosetting resin of the built-in layer 11. As the thermosetting resin, for example, an epoxy resin, a phenol resin, a cyanate resin, a polyphenylene ether resin, or a mixture thereof can be used.

  Next, the built-in layer 11 is obtained by molding the paste-like kneaded material to a constant thickness and heat-treating it. Note that this heat treatment has adhesiveness in a molded state when a liquid resin is used. Therefore, the heat treatment is performed in order to remove the adhesiveness while proceeding with a slight curing and maintaining flexibility in an uncured state. Is called. In the case of using a kneaded material in which a resin is dissolved with a solvent, the above-mentioned solvent is removed, and the adhesiveness is similarly removed while maintaining flexibility in an uncured state.

  A through hole is formed in the uncured built-in layer 11 produced in this way by a laser processing method, a processing by a mold, or a punching processing. In particular, in the laser processing method, a carbon dioxide laser or excimer laser is effective in terms of acceleration and fine processing.

  As the conductive resin 161 of the inner via 16, a material obtained by kneading the same thermosetting resin as that of the built-in layer 11 using gold, silver, or copper powder as a conductive material can be used. In particular, copper is effective because it has good conductivity and less migration. A thermosetting resin is also effective because a liquid epoxy resin is stable in terms of heat resistance.

  On the other hand, a desired wiring pattern 14 is formed on the circuit board 15, and electronic components such as the semiconductor element 12 and the chip component 13 are mounted on the wiring pattern 14. This process corresponds to an example of the mounting process of the present invention.

  The circuit board 15 having the wiring pattern 14 on which the electronic component is mounted, the built-in layer 11 manufactured by the above-described method, and the circuit board 15 having the wiring pattern 14 separately manufactured are aligned.

  Next, the stacked components are heated and pressed with a press to embed the electronic component in the built-in layer 11. By heating and pressurizing, the built-in layer 11 is remelted and has a low viscosity, and the electronic component is embedded in the built-in layer 11. Furthermore, by continuing the heating and pressurization, the thermosetting resin of the built-in layer 11 and the thermosetting resin of the inner via 16 are completely cured. Thereby, the built-in layer 11 and the electronic component and the circuit board 15 are mechanically firmly bonded. The state heated and pressurized in this way is shown in FIG. This process corresponds to an example of the heating / pressurizing process of the present invention. Further, the inner via 16 becomes conductive by curing and is in a state of being electrically connected to the wiring pattern 14 (see FIG. 4B).

  The material of the component built-in module 1 manufactured in this way is adjusted so that the thermal expansion coefficient of the built-in layer 11 is equal to or less than the thermal expansion coefficient of the circuit board 15.

  Therefore, as described in the first embodiment, when the thermal expansion coefficient of the built-in layer 11 is smaller than the thermal expansion coefficient of the circuit board 15, the circuit board 15 tends to expand more than the built-in layer 11 when the temperature rises. And Accordingly, the built-in layer 11 is pulled sideways by the circuit board 15, and a force for compressing the built-in layer 11 in the vertical direction (see the arrow Z in FIG. 2B) acts.

  The extension of the built-in layer 11 in the vertical direction (see arrow Z ′ in FIG. 7C) is a component that tends to spread up and down due to thermal expansion (see arrow Z ′ in FIG. 7C) and a component that compresses (see FIG. 7). 2 (b) (see arrow Z), the vertical expansion due to thermal expansion is smaller than in the conventional case. Furthermore, when the compression effect exceeds the thermal expansion, the component built-in module 1 contracts in the vertical direction (see arrow Z).

  Accordingly, even for a thermal history between 25 ° C. and 40 to 120 ° C., the force acting in the direction of separating the inner via 16, the semiconductor element 12, and the connection parts 17 a, b, c of the chip component 13 is weakened. Thus, the reliability of the connection portion can be further improved.

  In this way, an electronic component and the inner via 16 are built in the built-in layer 11, and a highly reliable component built-in module can be manufactured.

  On the other hand, as in the first embodiment, in the component built-in module 1, even when the thermal expansion coefficient of the built-in layer 11 is the same as the thermal expansion coefficient of the circuit board 15, the connection portions 17a, b, and c are pulled away. The working force can be suppressed. However, it is more preferable that the thermal expansion coefficient of the built-in layer 11 is smaller than that of the circuit board 15 because a force may act in the direction of helping connection.

  A release carrier on which the wiring pattern 14 is formed may be used instead of the circuit board 15 on which the wiring pattern 14 is formed. FIGS. 5A to 5C are views for explaining a method of manufacturing a component built-in module when the release carrier 19 is used. The component built-in module manufactured by this manufacturing method is the component built-in module 2 shown in FIG.

  As shown in FIG. 5A, an electronic component is mounted on a release carrier 19 having a wiring pattern 14 instead of the circuit board 15 on which the electronic component is mounted. This process corresponds to an example of the mounting process of the present invention.

  The release carrier 19 is to be released after the wiring pattern 14 is transferred, and an organic film such as polyethylene or polyethylene terephthalate, or a metal foil such as copper can be used. The wiring pattern 14 can be formed by bonding a metal foil such as a copper foil to the release carrier 19 via an adhesive, or by further electrolytic plating on the metal foil. The wiring pattern 14 can be formed by using an existing processing technique such as a chemical etching method on the metal layer formed in this way.

  The release carrier 19 having the wiring pattern 14 on which the electronic component is mounted, the built-in layer 11, and the circuit board 15 having the wiring pattern 14 separately manufactured are aligned.

  Next, as shown in FIG. 5B, by pressing the aligned and overlaid, the electronic component is embedded in the built-in layer 11 by heating and pressurizing, and the built-in layer 11 is cured.

By applying heat and pressure, the built-in layer 11 is remelted and has a low viscosity, and the electronic component is embedded in the built-in layer 11. Furthermore, by continuing heating and pressurization, the thermosetting resin of the built-in layer 11 and the thermosetting resin of the inner via 16 are completely cured. Thereby, the built-in layer 11 and the electronic component, the release carrier, and the circuit board 15 are mechanically firmly bonded. In addition, the inner via 16 becomes conductive by curing and is electrically connected to the wiring pattern 14. Finally release carrier 19 Ru is peeled. FIG. 5C shows a state where the release carrier 19 is peeled off.

  In the component built-in module 2 manufactured in this way, the thermal expansion coefficient of the built-in layer 11 is equal to or less than the thermal expansion coefficient of the circuit board 15.

  When the thermal expansion coefficient of the built-in layer 11 is smaller than the thermal expansion coefficient of the circuit board 15, the circuit board 15 tends to expand from the built-in layer 11 as the temperature rises. Accordingly, the built-in layer 11 is pulled horizontally by the circuit board 15, and a force for compressing the built-in layer 11 in the vertical direction (see arrow Z) is applied.

  The extension of the built-in layer 11 in the vertical direction (see arrow Z ′ in FIG. 7C) is a component (FIG. 7C, arrow Z ′ component) that tends to spread up and down due to thermal expansion and a component that compresses (FIG. 5 ( c) (see arrow Z), the vertical elongation due to thermal expansion is smaller than in the conventional case. Furthermore, when the compression effect exceeds the thermal expansion, the component built-in module 2 contracts in the vertical direction (Z direction).

  As a result, even with respect to the thermal history between 25 ° C. and 40 to 120 ° C., better reliability is obtained for the connecting portions of the inner via 16, the semiconductor element 12, and the chip component 13 than in the past.

  In this way, an electronic component and the inner via 16 are built in the built-in layer 11, and a highly reliable component built-in module is manufactured. Even when the thermal expansion coefficient of the built-in layer 11 is the same as the thermal expansion coefficient of the circuit board 15, the force acting in the direction of separating the connection portions 17a, b, c can be suppressed as described above. However, it is more preferable that the thermal expansion coefficient of the built-in layer 11 is smaller than that of the circuit board 15 because a force may act in the direction of helping connection.

  5A to 5C, the electronic components such as the semiconductor element 12 and the chip component 13 are mounted on the release carrier 19, but the electronic components may be mounted on the circuit board 15.

  FIG. 6A is a front sectional view showing an example in which the release carrier 19 is used on the upper surface of the built-in layer 11 and electronic components are mounted on the circuit board 15. 6A. The component built-in module shown in FIG. 6B is manufactured by superposing, heating and pressurizing from the state of FIG. The component built-in module shown in FIG. 6B is the same as the component built-in module 3 shown in FIG.

  In the first embodiment, a component built-in module that satisfies (Equation 1) will be described. In the second to fifth embodiments, the components of the first embodiment are added with the conditions of equations (2) to (6), respectively. Although the module has been described, the present invention is not limited thereto, and the module may be a component built-in module that satisfies one or a plurality of appropriately selected expressions from Expressions (1) to (6). It may be a component built-in module that satisfies the requirements.

Method for manufacturing a component-embedded module of the present invention, the quality of the connection portion has a better effect can be used as a component built-in module or the like which is high-density mounting.

Front sectional configuration diagram of a component built-in module according to the first embodiment of the present invention (A) (b) Front sectional block diagram for demonstrating the component built-in module in Embodiment 1 concerning this invention (A)-(d) Front cross-section block diagram of the component built-in module of the modification in Embodiment 1 concerning this invention (A) (b) Front cross-section block diagram for demonstrating the manufacturing method of the component built-in module in Embodiment 6 concerning this invention (A)-(c) Front sectional block diagram for demonstrating the modification of the manufacturing method of the component built-in module in Embodiment 6 concerning this invention (A) (b) Front cross-section block diagram for demonstrating the modification of the manufacturing method of the component built-in module in Embodiment 6 concerning this invention (A)-(c) Front sectional block diagram for demonstrating the conventional component built-in module

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Component built-in module 11 Built-in layer 12 Semiconductor element 13 Chip component 14 Wiring pattern 15 Circuit board 16 Inner via | veer 17a, 17b, 17c Connection part 18 Sealing resin

Claims (3)

A mounting step of mounting electronic components on the wiring pattern of the first substrate;
A through hole is formed in a built-in layer that is formed of a mixture including an inorganic filler and an uncured thermosetting resin, and has a thermal expansion coefficient that is equal to or lower than the thermal expansion coefficient of the first substrate. An inner via forming step of filling the conductive resin and forming an inner via;
The first substrate is disposed so that the surface on which the electronic component is mounted faces one surface of the built-in layer, and the thermal expansion coefficient of the built-in layer after curing is set on the other surface of the built-in layer. Manufacture of a component built-in module comprising a second substrate having the above thermal expansion coefficient, and a heating / pressurizing step for heating and pressurizing the first substrate, the built-in layer, and the second substrate. method der is,
The thermal expansion coefficient of the conductive resin is larger than that of the built-in layer, the first substrate, and the second substrate,
A method of manufacturing a component built-in module in which the conductive resin is expanded from the built-in layer in the heating / pressurizing step, and contacts and is joined to the wiring pattern of the first substrate.   The method of manufacturing a component built-in module according to claim 1, wherein the conductive resin includes a thermosetting resin and copper powder.   The method for manufacturing a component built-in module according to claim 2, wherein the thermosetting resin is a liquid epoxy resin.

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