JP5064938B2 - Manufacturing method of semiconductor device - Google Patents

Description

  The present invention relates to a method for manufacturing a semiconductor element having an external connection terminal exposed on the surface thereof.

  Generally, a semiconductor element is packaged using a ceramic or a mold resin. In this case, a substantially rectangular semiconductor substrate on which a plurality of elements are formed, generally called a semiconductor chip, is connected to a plurality of external terminals arranged so as to face each side of the substantially square shape by a gold wire or the like. Is done. A part of the semiconductor chip, the gold wire, and the external terminal is covered with ceramic or mold resin.

  In such a structure, when the size of the semiconductor chip is increased, the plurality of external terminals are arranged around the enlarged semiconductor chip, and thus the outer shape thereof must be enlarged. Also, when the number of external terminals increases, the external terminals must be enlarged because the pitch of the external terminals is limited.

In such a case, it was difficult to improve the mounting density.
In addition, there are the following as prior art documents related to the present invention.
JP-A-10-79362 Japanese Patent Laid-Open No. 5-291352 Japanese Patent Laid-Open No. 4-15939 JP-A-6-77233 JP-A-1-276748

  The present invention provides a method for manufacturing a semiconductor element capable of suppressing an increase in the outer shape and improving the mounting density even when the size of a semiconductor chip is increased or the number of external terminals is increased. The purpose is to provide.

According to a first aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: a semiconductor wafer having a plurality of substantially rectangular semiconductor chip regions; and an element body formed in the semiconductor chip region and including an element electrode; Preparing a semiconductor wafer including a groove formed along the groove, a first insulating film formed inside the groove, covering the element body and exposing the element electrode, and at least a first insulation Forming a second insulating film covering the layer and extending to the inside of the trench, and forming the second insulating film, and then forming an external connection terminal electrically connected to the device electrode And a step of separating the individual semiconductor elements by separating the outside from the grooves formed along the outer periphery of the semiconductor chip region after forming the external connection terminals.

  Here, the first insulating film is, for example, the insulating film 2, and the second insulating film is, for example, the protective film 5.

According to a second aspect of the present invention, there is provided a method for manufacturing a semiconductor device, comprising: preparing a semiconductor wafer having a plurality of substantially rectangular semiconductor chip regions and a peripheral region surrounding the semiconductor chip region; and a device electrode in the semiconductor chip region. A step of forming an element body, a step of forming a groove in the peripheral region along the outer periphery of the semiconductor chip region, a step of forming a first insulating film exposing a part of the element electrode in the element body region, Forming a wiring for an electrode extending to the external connection terminal extraction region on the semiconductor chip region on the element electrode and the first insulating film exposed from the first insulating film, and a first insulation on the wiring for the electrode Forming a second insulating film on the film and in the trench; and forming an external connection terminal for electrically connecting the electrode wiring and the external device after the step of forming the second insulating film; After forming the external connection terminal And a step of separating into individual semiconductor devices by separating in the peripheral region outside the grooves formed along the outer periphery second insulating film is not formed in the semiconductor chip regions.

  Here, the first insulating film is, for example, the insulating film 2, and the second insulating film is, for example, the protective film 5.

  In the present invention, the external connection terminals 4 are formed so as to be exposed above the protective film 5 covering the surface of the semiconductor chip. Therefore, even when the size of the semiconductor chip is increased, the external connection means is arranged on the surface. Therefore, it is possible to suppress an increase in the outer shape due to the external connection terminals arranged around the conventional semiconductor chip.

  Further, even when the number of external connection terminals increases, the external connection terminals are arranged on the surface of the semiconductor chip, so that the arrangement of the external connection terminals can be relaxed, and an increase in the outer shape can be suppressed.

  In the present invention, since the groove 6 is formed along the outer periphery of the semiconductor substrate and the protective film 5 is formed inside and above the groove, the distance between the element body and the outside becomes long, and the semiconductor substrate 1 It is possible to prevent the external atmosphere from entering from the interface between the protective film 5 and the protective film 5, and to prevent damage to the protective film 5 due to thermal stress. Further, since the contact area between the semiconductor substrate and the protective film is increased by the groove 6, mechanical stress at the time of cutting can be alleviated.

  Furthermore, since the surface of the semiconductor chip is covered with the protective film 5, no further mounting with ceramic or mold resin is required, and the size of the outer shape can be reduced and the mounting density can be improved.

  In the first invention, since the element electrode 7 and the external connection terminal 4 are connected using the electrode wiring 3, the external connection terminal 4 is arbitrarily placed at an arbitrary position within the semiconductor chip surface. Thus, the outer shape can be miniaturized and the mounting density can be improved.

  (First Embodiment) FIG. 1A is a view showing a first embodiment of the present invention, and FIG. 1B is a plan view of a groove portion of FIG.

  First, the structure of the semiconductor element with external connection terminals will be described.

  Reference numeral 1 denotes a substantially rectangular semiconductor substrate, and an element body is formed in or on the semiconductor substrate 1. An element electrode 7 is formed on the element body, and an electrode wiring 3 extending to the external connection terminal extraction region A is formed on the element electrode 7. An external connection terminal 4 is formed in the external connection terminal extraction region A on the electrode wiring 3.

  Further, the electrically connected element electrode 7, electrode wiring 3 and external connection terminal 4 are insulated from other elements and electrodes by the insulating film 2 and the protective film 5. Of course, the surface of the external connection terminal 4 is exposed above the protective film 5.

  A groove 6 is formed along the outer periphery of the semiconductor substrate 1 as shown in FIG.

  Next, a method for manufacturing the semiconductor element with external connection terminals will be described.

  A semiconductor wafer in which a plurality of substantially rectangular semiconductor substrates 1 having element bodies formed therein is formed is prepared inside or on the top, and grooves are formed by etching along the outer periphery of each semiconductor substrate 1 (FIG. 1 (b)).

  Next, the element electrode 7 is formed so as to be connected to the element body, and the insulating film 2 is formed on the element electrode 7. At this time, the insulating film 2 is not formed in the groove 6.

  Next, a contact hole reaching the device electrode 7 is formed on the insulating film 2 by etching, and patterning is performed so as to extend from the contact hole to the external connection terminal extraction region A.

  Next, a protective film 5 is formed on the groove 6, the insulating film 2, and the electrode wiring 3, and a contact hole reaching the electrode wiring 3 is formed in the external terminal extraction region A. The external connection terminal 4 is formed in the contact hole so that the surface thereof is exposed on the protective film 5.

  Thus, the external connection terminal 4 is connected to the electrode wiring 3 through the contact hole of the protective film 5, and the electrode wiring 3 extends on the insulating film 2 and is connected to the element electrode 7.

  Finally, each semiconductor substrate 1 shown in FIG.

  Thus, in the first embodiment of the present invention, the external connection terminal 4 is formed so as to be exposed on the upper portion of the protective film 5 covering the surface of the semiconductor chip, so that even when the size of the semiconductor chip is increased However, since the external connection terminals are arranged on the surface, it is possible to suppress an increase in the outer shape due to the arrangement of the external connection terminals around the conventional semiconductor chip.

  Further, even when the number of external connection terminals increases, the external connection terminals 4 are arranged on the surface of the semiconductor chip, so that the arrangement of the external connection terminals can be relaxed, and an increase in the outer shape can be suppressed. In particular, in the first embodiment of the present invention, since the element electrode 7 and the external connection terminal 4 are connected using the electrode wiring 3, the external connection terminal 4 is placed at a desired position on the surface of the semiconductor chip. The pitch of the external connection terminals 4 can be set as appropriate.

  FIG. 1C is a top view of a semiconductor chip in which the external connection terminals 4 are arranged in a matrix, and FIG. 1D is a cross-sectional view taken along line AA ′ in FIG.

  Thus, if the electrode wiring 3 is routed from each element electrode 7 so that the external connection terminals are arranged in a matrix, it is possible to cope with an increase in the number of external connection terminals without increasing the outer shape.

  In the first embodiment of the present invention, the groove 6 is formed along the outer periphery of the semiconductor substrate 1, and the protective film 5 is formed inside and above the groove. Therefore, the distance between the element body and the outside It is possible to prevent the external atmosphere from entering from the interface between the semiconductor substrate 1 and the protective film 5. Moreover, since the contact area between the semiconductor substrate 1 and the protective film 5 is increased by the groove 6, mechanical stress at the time of cutting can be alleviated.

  Further, since the surface of the semiconductor chip is covered with the protective film 5, further mounting with ceramic or mold resin is unnecessary, and the outer shape can be reduced and the mounting density can be improved.

(Second Embodiment) FIG. 2 is a diagram showing a second embodiment of the present invention.
The portions corresponding to those in FIG. 1A are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the semiconductor element with an external connection terminal in FIG. 2, the external connection terminal 4 is formed directly on the element electrode 7, and the electrode wiring 3 of the semiconductor element with an external connection terminal in FIG. 1 (a) is not formed.

  Thus, for example, when there is a space between the plurality of element electrodes 7, the external connection terminals 4 may be formed directly on the element electrodes 7 without using the electrode wiring 3.

  The manufacturing method of the semiconductor element with external connection terminals is the same as that of the first embodiment until the step of forming the insulating film 2. A protective film 5 is formed on the insulating film 2 and the groove 6.

  Next, a contact hole reaching the element electrode 7 is formed, and the external connection terminal 4 is formed in the contact hole so that the surface thereof is exposed on the protective film 5.

  In this case, the external connection terminal 4 is directly connected to the element electrode 7 through the contact hole.

  Finally, each semiconductor substrate 1 shown in FIG.

  As described above, in the second embodiment of the present invention, the external connection terminal 4 is formed so as to be exposed on the upper portion of the protective film 5 covering the surface of the semiconductor chip, so that even when the size of the semiconductor chip is increased. However, since the external connection terminals are arranged on the surface, it is possible to suppress an increase in the outer shape due to the arrangement of the external connection terminals around the conventional semiconductor chip.

  Further, even when the number of external connection terminals increases, the external connection terminals are arranged on the surface of the semiconductor chip, so that the arrangement of the external connection terminals can be relaxed, and an increase in the outer shape can be suppressed.

  Compared to the first embodiment, since it is not necessary to form the electrode wiring 3, the configuration is simplified, and manufacturing in a short time and at a low cost is possible. As described above, such a configuration is suitable when there is a space between the plurality of element electrodes 7.

(Third Embodiment) FIG. 3 is a diagram showing a third embodiment of the present invention.
The portions corresponding to those in FIG. 1A are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the semiconductor element with external connection terminals in FIG. 3, a pin-type metal bar 34 is used as an external connection terminal, which is applied to a pin grid array (PGA) type. A copper material or the like is used for the metal rod 34.

  Since the manufacturing method of this semiconductor element with an external connection terminal is the same as that of the first embodiment, its detailed description is omitted.

(Fourth Embodiment) FIG. 4 is a diagram showing a fourth embodiment of the present invention.
The portions corresponding to those in FIG. 1A are denoted by the same reference numerals, and detailed description thereof is omitted.

  In the semiconductor element with an external connection terminal in FIG. 4, a socket 44 having an external connection recess 44 a is used as an external connection terminal. By connecting a wiring having a projection to the socket 44, an external element or an external A connection to the device is made.

  Since the manufacturing method of this semiconductor element with an external connection terminal is the same as that of the first embodiment, its detailed description is omitted.

The figure which shows the 1st Embodiment of this invention The figure which shows the 2nd Embodiment of this invention The figure which shows the 3rd Embodiment of this invention The figure which shows the 4th Embodiment of this invention

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Insulating film 3 Electrode wiring 4 External connection terminal 5 Protective film 6 Groove 7 Element electrode A External connection terminal extraction area 34 Metal rod 44 Socket 44a Recess

Claims (6)

A semiconductor wafer having a plurality of substantially rectangular semiconductor chip regions, the device body formed in the semiconductor chip region, including an element electrode, a groove formed along the outer periphery of the semiconductor chip region, and the groove Preparing the semiconductor wafer including a first insulating film formed on the inside of the substrate and covering the element body and exposing the element electrode;
Forming a second insulating film covering at least the first insulating layer and extending into the trench;
After the step of forming the second insulating film, forming an external connection terminal electrically connected to the element electrode;
Separating the individual semiconductor elements by separating the outside from the grooves formed along the outer periphery of the semiconductor chip region after forming the external connection terminals;
A method for manufacturing a semiconductor device, comprising: In the manufacturing method of the semiconductor device according to claim 1,
A method of manufacturing a semiconductor device, further comprising a step of forming electrode wiring on the device electrode and the first insulating film after the step of preparing the semiconductor wafer. Preparing a semiconductor wafer having a plurality of substantially rectangular semiconductor chip regions and a peripheral region surrounding the semiconductor chip regions;
Forming an element body including an element electrode in the semiconductor chip region;
Forming a groove in the peripheral region along an outer periphery of the semiconductor chip region;
Forming a first insulating film exposing a part of the device electrode in the device body region;
Forming an electrode wiring extending to the external connection terminal extraction region on the semiconductor chip region on the element electrode and the first insulating film exposed from the first insulating film;
Forming a second insulating film on the electrode wiring, on the first insulating film, and in the groove;
After the step of forming the second insulating film, forming an external connection terminal for electrically connecting the electrode wiring and an external device;
After forming the external connection terminals, the outside is separated from the groove formed along the outer periphery of the semiconductor chip region in the peripheral region where the second insulating film is not formed, so that individual semiconductor elements are separated. Process,
A method for manufacturing a semiconductor device, comprising: In the manufacturing method of the semiconductor device according to claim 3,
The step of forming the second insulating film includes the step of forming a second insulating film on the electrode wiring, on the first insulating film, and in the groove except on the electrode wiring located in the external terminal extraction region. Is a step of forming
The step of forming the external connection terminal is a step of forming an external connection terminal for electrically connecting the electrode wiring and an external device on the electrode wiring located in the external connection terminal extraction region. A method for manufacturing a semiconductor device. Preparing a semiconductor wafer having a plurality of substantially rectangular semiconductor chip regions and a peripheral region surrounding the semiconductor chip regions;
Forming an element body including an element electrode in the semiconductor chip region;
Forming a groove in the peripheral region along an outer periphery of the semiconductor chip region;
Forming a first insulating film exposing a part of the device electrode in the device body region;
Forming a second insulating film on the first insulating film and in the groove;
After the step of forming the second insulating film, forming an external connection terminal for electrically connecting the element electrode and an external device;
After forming the external connection terminals, the outside is separated from the groove formed along the outer periphery of the semiconductor chip region in the peripheral region where the second insulating film is not formed, so that individual semiconductor elements are separated. Process,
A method for manufacturing a semiconductor device, comprising: In the manufacturing method of the semiconductor device according to any one of claims 1 to 5,
The method of manufacturing a semiconductor device, wherein the first insulating film covers a little inside from a position where the groove is formed.

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