JP5084656B2 - Development processing method and development processing apparatus - Google Patents

Description

  The present invention relates to a development processing method and a development processing apparatus that perform cleaning by supplying a cleaning liquid after developing an exposed substrate.

  In general, in the manufacture of semiconductor devices, a photoresist is coated on a substrate such as a semiconductor wafer, a resist film formed thereby is exposed according to a predetermined circuit pattern, and the exposure pattern is developed. A circuit pattern is formed on the resist film. In such a photolithography process, a system is generally used in which an exposure apparatus is connected to a coating / developing apparatus for coating and developing a resist.

  In a general development process, a cleaning process is performed in order to remove the dissolved resist together with the developer from the substrate surface.

  As a conventional method of this type of cleaning treatment, a cleaning liquid is supplied to the center of the substrate, the liquid film is expanded by the centrifugal force, and the dissolved material and the developer are removed from the substrate by being placed on the liquid flow. The method is known.

As another cleaning method, an inert gas nozzle positioned on the central side above the substrate and a cleaning liquid supply nozzle positioned on the outer peripheral side above the substrate are rotated while rotating the substrate around the vertical axis while holding the substrate horizontally. A method (apparatus) is known in which the cleaning liquid film on the surface of the substrate is simultaneously removed in the radial direction from the center to the outer periphery of the substrate to be removed by spraying inert gas and dried (see, for example, Patent Document 1).
Japanese Patent No. 3322853 (Claims, FIG. 2)

  However, in the former, that is, the spin cleaning method, the dissolved product cannot be sufficiently removed, and the remaining dissolved product appears as a development defect. For this reason, spin cleaning is carried out for a long time, which is a major factor in reducing the throughput. Further, there is a concern that even if the resist material is washed for a long time due to the high water repellency, the dissolved product remains, and sufficient washing cannot be performed.

  On the other hand, in the latter technique, that is, in the technique described in Patent Document 1, an inert gas nozzle located on the upper center side of the substrate and a cleaning liquid supply nozzle located on the outer circumference side above the substrate are arranged in the radial direction from the center of the substrate to the outer circumference. Since the cleaning liquid and the inert gas are supplied to the substrate while being moved simultaneously, the cleaning time can be shortened as compared with the above-described spin cleaning. However, in the technique described in Patent Document 1, when the inert gas is supplied (jetted) to the side of the center of the cleaning liquid supplied (discharged) from the cleaning liquid supply nozzle and moved to the outer peripheral edge of the substrate, There is a problem in that droplets are scattered and defects that become dry stripes occur.

  The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a development processing method and a development processing apparatus capable of shortening the cleaning and drying time and removing defects of dry stripes.

  In order to solve the above-described problems, a development processing method of the present invention is a development processing method in which a developer is supplied to the surface of an exposed substrate for development, and then a cleaning solution is supplied to the surface of the substrate for cleaning. In the first development processing method, the cleaning liquid is supplied from the cleaning liquid supply nozzle from above the central portion of the substrate while rotating the substrate holding portion holding the substrate horizontally around the vertical axis, and at the same time adjacent to the cleaning liquid supply nozzle. The airflow generated by the rotation of the substrate is guided and diffused by the airflow induction diffusing portion to the cleaning liquid film, and the diameter of the cleaning liquid supply nozzle and the airflow induction diffusing portion is made parallel from the central portion of the substrate toward the outer peripheral edge of the substrate. The substrate is cleaned and dried by simultaneously moving in the direction.

  In the second development processing method of the present invention, the cleaning liquid is supplied from the cleaning liquid supply nozzle from above the central portion of the substrate while rotating the substrate holding portion holding the substrate horizontally around the vertical axis, and at the same time, the cleaning liquid supply nozzle The inert gas is guided and diffused into the liquid film by an air flow induction diffusing section adjacent to each other and an inert gas nozzle that guides an air flow of the inert gas to the liquid film of the cleaning liquid in cooperation with the air flow induction diffusing section. The substrate is cleaned and dried by simultaneously moving the supply nozzle, the airflow induction diffusing unit and the inert gas nozzle in the radial direction from the center of the substrate toward the outer peripheral edge of the substrate. .

  In the second development processing method, before supplying the cleaning liquid from the cleaning liquid supply nozzle to the substrate surface and simultaneously supplying the inert gas from the inert gas nozzle, the inert gas is supplied from the auxiliary inert gas nozzle to the center of the substrate. Then, a dry zone is formed in the center of the substrate, and then the cleaning liquid is supplied from the cleaning liquid supply nozzle to the substrate surface, and at the same time, the inert gas is supplied from the inert gas nozzle.

  The first development processing apparatus of the present invention embodies the first development processing method of the present invention. After the development is performed by supplying a developing solution to the surface of the exposed substrate, In a development processing apparatus that supplies a cleaning liquid to a surface for cleaning, a substrate holding unit that holds the substrate horizontally, a rotation mechanism that rotates the substrate holding unit around a vertical axis, and a substrate surface that is positioned above the substrate. A cleaning liquid supply nozzle for supplying a cleaning liquid to the cleaning liquid supply nozzle, an airflow induction diffusing section that is adjacent to and parallel to the cleaning liquid supply nozzle and that induces and diffuses an airflow generated by rotation of the substrate into the liquid film of the cleaning liquid; A movement mechanism that holds the diffusion portions in parallel with each other and moves in a radial direction from the center of the substrate toward the outer periphery of the substrate, the rotation mechanism, the cleaning liquid supply nozzle, and the cleaning liquid supply source, An opening / closing valve interposed in the cleaning liquid supply pipe to be connected and a control means connected to the moving mechanism, and simultaneously supplying the cleaning liquid to the central portion of the substrate rotating around the vertical axis by the control means, While the airflow generated by the rotation of the substrate is guided and diffused into the liquid film of the cleaning liquid, the cleaning liquid supply nozzle and the airflow guiding and diffusing section are in a parallel state and are simultaneously moved in the radial direction from the center of the substrate toward the outer peripheral edge of the substrate. Then, the substrate is cleaned and dried (claim 4).

The second development processing apparatus of the present invention embodies the second development processing method of the present invention. After developing by supplying a developer to the surface of the exposed substrate, In a development processing apparatus that supplies a cleaning liquid to the surface for cleaning, a substrate holding unit that holds the substrate horizontally,
A rotation mechanism that rotates the substrate holding unit around a vertical axis; a cleaning liquid supply nozzle that is located above the substrate and supplies a cleaning liquid to the substrate surface; an airflow induction diffusion unit adjacent to the cleaning liquid supply nozzle; and the airflow induction An inert gas nozzle that guides an inert gas stream to the liquid film of the cleaning liquid in cooperation with the diffusion section; and the cleaning liquid supply nozzle, the airflow induction diffusion section, and the inert gas nozzle are held in parallel with each other, and the center of the substrate A moving mechanism that moves in a radial direction from the portion toward the outer peripheral edge of the substrate, a first on-off valve provided in a cleaning liquid supply pipe that connects the rotating mechanism, the cleaning liquid supply nozzle, and a cleaning liquid supply source; A second opening / closing valve interposed in an inert gas supply pipe connecting the inert gas nozzle and the inert gas supply source, and a control means connected to the moving mechanism, the control means Accordingly, the cleaning liquid is supplied to the central portion of the substrate that rotates about the vertical axis, and at the same time, the airflow induction diffusing section and the inert gas nozzle cooperate to induce and diffuse the inert gas into the liquid film of the cleaning liquid. The substrate is cleaned and dried by simultaneously moving the supply nozzle, the airflow induction diffusing unit and the inert gas nozzle in the radial direction from the center of the substrate toward the outer peripheral edge of the substrate. (Claim 5).

  The invention described in claim 6 is the development processing apparatus according to claim 5, wherein the auxiliary inert gas supply nozzle adjacent to the cleaning liquid supply nozzle is moved to the center of the substrate. And a third on-off valve interposed in an inert gas supply pipe connecting the auxiliary inert gas supply nozzle and the inert gas supply source, and the moving mechanism and the first The control means is connected to the on-off valve 3, and the auxiliary inert gas nozzle is supplied by the control means before supplying the cleaning liquid to the substrate surface from the cleaning liquid supply nozzle and simultaneously supplying the inert gas from the inert gas nozzle. Further, an inert gas is supplied to the central portion of the substrate to form a dry region in the central portion of the substrate. After that, the cleaning liquid is supplied to the substrate surface from the cleaning liquid supply nozzle, and at the same time, the inert gas is supplied. An inert gas is supplied from a reactive gas nozzle.

  In the development processing apparatus of the present invention, the airflow induction diffusion portion can be formed in an arbitrary shape. For example, the airflow induction diffusion part may be formed of a flat plate member (claim 7).

  In addition, when an inert gas nozzle is used, the airflow induction diffusion portion may be formed by a plurality of members parallel to each other, and a supply port of the inert gas nozzle may be disposed in a gap between the members (claims). Item 8).

  When an inert gas nozzle is used, the airflow induction diffusion portion is formed by a substantially U-shaped member that houses the inert gas nozzle on the inner side (Claim 9), or at least a part of the inert gas nozzle is formed. It is formed by a member having a holding groove to be inserted (Claim 10), is formed by a member having a substantially arcuate cross section that accommodates the inert gas nozzle on the inner side (Claim 11), or the inert gas nozzle A first cross-section substantially arc-shaped portion that accommodates the first cross-section substantially arc-shaped portion, and a second cross-section substantially arc-shaped portion and a third cross-section substantially arc-shaped portion respectively connected to both ends of the first cross-section substantially arc-shaped portion; (Claim 12), or a member having wave-shaped irregularities continuous in the width direction on the back surface side with respect to the cleaning liquid supply nozzle side (Claim 13).

  In addition, the airflow induction diffusion part may be formed of a hollow member having a hollow chamber connected to an inert gas nozzle. In this case, a structure may be provided in which one side of the hollow member is provided with an inclined surface having a downward slope toward the supply port of the cleaning liquid supply nozzle, and a plurality of gas discharge ports are provided at the bottom of the hollow chamber. Further, the hollow member is formed in a flat box shape parallel to the cleaning liquid supply nozzle, and the inert gas nozzle is connected to a rear upper corner of the hollow liquid member in the moving direction of the cleaning liquid supply nozzle and the airflow induction diffusion unit, A slit-like gas discharge port connected to the bottom of the hollow chamber and the side wall ahead of the moving direction may be provided.

  According to the first, fourth, and seventh aspects of the present invention, the cleaning liquid is supplied from the cleaning liquid supply nozzle from above the central portion of the substrate that is held horizontally and rotates around the vertical axis, and at the same time, the airflow induction diffusion adjacent to the cleaning liquid supply nozzle By inducing and diffusing the air flow generated by the rotation of the substrate to the liquid film of the cleaning liquid by the unit, the liquid film can be thinned to form a dry region. In this state, the cleaning liquid supplied from the cleaning liquid supply nozzle is discharged (discharged) by simultaneously moving the cleaning liquid supply nozzle and the airflow guide diffusing portion in the radial direction from the central portion of the substrate toward the outer peripheral edge of the substrate. Can be prevented by the airflow induction diffusion unit, so that the substrate can be cleaned and dried without the droplets of the cleaning liquid being scattered in the drying region.

  According to the second, fifth, seventh, and ninth to thirteenth aspects, the cleaning liquid is supplied from the cleaning liquid supply nozzle from above the central portion of the substrate that is held horizontally and rotates about the vertical axis, and at the same time, The inert gas nozzle induces and diffuses the inert gas stream into the liquid film of the cleaning liquid in cooperation with the air flow induction diffusion unit, thereby thinning the liquid film and forming a dry area. can do. In this state, supply (discharge) from the cleaning liquid supply nozzle by simultaneously moving the cleaning liquid supply nozzle, the airflow induction diffusing section, and the inert gas nozzle in the radial direction from the center of the substrate toward the outer peripheral edge of the substrate. Since the airflow induction diffusion unit can prevent the cleaning liquid scattered to the drying area side, the substrate can be cleaned and dried without droplets of the cleaning liquid being scattered in the drying area.

  According to the third and sixth aspects of the present invention, before supplying the cleaning liquid from the cleaning liquid supply nozzle to the substrate surface and at the same time supplying the inert gas from the inert gas nozzle, the inert gas is supplied from the auxiliary inert gas nozzle to the center of the substrate. To form a dry region at the center of the substrate, and then supply the cleaning liquid from the cleaning liquid supply nozzle to the substrate surface and simultaneously supply the inert gas from the inert gas nozzle, thereby promoting the drying.

  Further, according to the invention described in claim 8, the airflow induction diffusion part is formed by a plurality of members parallel to each other, and the supply port of the inert gas nozzle is disposed in the gap between the members. A region where the liquid film is thinned, that is, a dry region can be expanded by the amount of the inert gas.

  According to the fourteenth aspect of the present invention, an inclined surface having a downward slope toward the supply port of the cleaning liquid supply nozzle is provided on one side of the hollow member having the hollow portion, and a large number of gas discharge ports are provided at the bottom of the hollow chamber. By providing, after the inert gas supplied from the inert gas nozzle is once accumulated in the hollow chamber, it can be discharged from a large number of gas discharge ports provided at the bottom of the hollow chamber and sprayed onto the liquid film of the cleaning liquid.

  According to the invention of claim 15, the hollow member having the hollow portion is formed in a flat box shape parallel to the cleaning liquid supply nozzle, and the rear of the cleaning liquid supply nozzle and the airflow induction diffusion portion in the hollow member in the moving direction is formed. An inert gas nozzle is connected to the upper corner, and a slit-like gas discharge port connected to the bottom of the cavity chamber and the side wall ahead in the moving direction is provided, so that the inert gas supplied from the inert gas nozzle is temporarily supplied to the cavity chamber. After the accumulation, it can be discharged from the gas discharge port and sprayed onto the liquid film of the cleaning liquid. At this time, the inert gas nozzle is sprayed in the moving direction of the cleaning liquid supply nozzle and the airflow induction diffusion unit.

  According to this invention, since it is configured as described above, the following effects can be obtained.

  (1) According to the first, fourth, and seventh aspects of the present invention, the cleaning liquid is supplied from the upper part of the central portion of the rotating substrate from the cleaning liquid supply nozzle, and at the same time, the air flow generated by the rotation of the substrate by the air flow induction diffusion unit By inductively diffusing into the film, the liquid film can be thinned to form a dry region. In addition, the cleaning liquid supplied from the cleaning liquid supply nozzle is dried by simultaneously moving the cleaning liquid supply nozzle and the airflow guide diffusion part in the radial direction from the center of the substrate toward the outer peripheral edge of the substrate. Since scattering to the region side can be prevented by the airflow induction diffusion unit, the substrate can be cleaned and dried without the droplets of the cleaning liquid being scattered to the drying region. Therefore, the cleaning / drying time can be shortened, and the defect of dry stripes can be removed.

  (2) According to the invention described in claims 2, 5, 7, and 9 to 13, the cleaning liquid is supplied from the cleaning liquid supply nozzle from above the central portion of the rotating substrate, and at the same time, the air flow induction diffusion section and the air flow induction diffusion section By inducing and diffusing the inert gas into the liquid film by the inert gas nozzle that cooperates to induce an inert gas stream to the liquid film of the cleaning liquid, the liquid film can be thinned to form a dry region. In addition, the cleaning liquid supply nozzle, the airflow induction diffusing section, and the inert gas nozzle are arranged in parallel with each other and simultaneously moved in the radial direction from the central portion of the substrate toward the outer peripheral edge of the substrate, thereby being supplied (discharged) from the cleaning liquid supply nozzle. Since the scattering of the cleaning liquid toward the drying area can be prevented by the airflow induction diffusion unit, the substrate can be cleaned and dried without the droplets of the cleaning liquid being scattered in the drying area. Therefore, the cleaning / drying time can be shortened, and the defect of dry stripes can be removed.

  (3) According to the third and sixth aspects of the present invention, before supplying the cleaning liquid from the cleaning liquid supply nozzle to the substrate surface and at the same time supplying the inert gas from the inert gas nozzle, the auxiliary inert gas nozzle is placed at the center of the substrate. Since an inert gas is supplied to form a dry region in the center of the substrate, drying can be further promoted in addition to the above (2).

  (4) According to the invention described in claim 8, since the region where the liquid film is thinned by a large amount of inert gas, that is, the drying region can be expanded, in addition to the above (2) and (3), further drying It can be promoted.

  (5) According to the fourteenth aspect of the present invention, after the inert gas supplied from the inert gas nozzle is once stored in the hollow chamber, the cleaning liquid is discharged from a number of gas discharge ports provided at the bottom of the hollow chamber. In addition to the above (2) and (3), the induction diffusion region of the inert gas can be made uniform to promote drying.

  (6) According to the invention described in claim 15, after the inert gas supplied from the inert gas nozzle is once stored in the hollow chamber, it can be discharged from the gas discharge port and sprayed onto the liquid film of the cleaning liquid. Since the active gas nozzle is sprayed in the moving direction of the cleaning liquid supply nozzle and the airflow induction diffusion unit, in addition to the above (2) and (3), the induction diffusion region of the inert gas can be made uniform to promote drying. At the same time, it is possible to ensure a dry area on the center side of the substrate.

  The best mode of the present invention will be described below with reference to the accompanying drawings.

  FIG. 1 is a schematic plan view showing the entire processing system in which an exposure processing apparatus is connected to a coating / developing processing apparatus to which the developing processing apparatus according to the present invention is applied, and FIG. 2 is a schematic perspective view of the processing system.

  The processing system includes a carrier station 1 for carrying in and out a plurality of, for example, 25, semiconductor wafers W (hereinafter referred to as wafers W), which are substrates to be processed, and a carrier station 1 for taking in and out the carrier 10. A processing unit 2 that performs resist coating, development processing, and the like on the wafer W; an exposure unit 4 that performs immersion exposure on the surface of the wafer W in a state in which a liquid layer that transmits light is formed on the surface of the wafer W; An interface unit 3 connected to the exposure unit 4 and delivering the wafer W is provided.

  The carrier station 1 includes a mounting unit 11 on which a plurality of carriers 10 can be placed side by side, an opening / closing unit 12 provided on a front wall as viewed from the mounting unit 11, and a wafer from the carrier 10 via the opening / closing unit 12. Delivery means A1 for taking out W is provided.

  The interface unit 3 includes a first transfer chamber 3A and a second transfer chamber 3B that are provided between the processing unit 2 and the exposure unit 4 in the front-rear direction, and includes a first wafer transfer unit 30A and a second transfer chamber 3B, respectively. A second wafer transfer unit 30B is provided.

  Further, a processing unit 2 surrounded by a housing 20 is connected to the back side of the carrier station 1, and the processing unit 2 is a shelf unit in which heating / cooling units are sequentially arranged from the front side. Main transfer means A2 and A3 for transferring the wafer W between the units U1, U2 and U3 and the liquid processing units U4 and U5 are alternately arranged. The main transport means A2 and A3 include one surface portion on the shelf unit U1, U2 and U3 side arranged in the front-rear direction when viewed from the carrier station 1, and one surface portion on the right liquid processing unit U4 and U5 side which will be described later. And a space surrounded by a partition wall 21 composed of a rear surface portion forming one surface on the left side. Further, between the carrier station 1 and the processing unit 2 and between the processing unit 2 and the interface unit 3, a temperature / humidity provided with a temperature control device for the processing liquid used in each unit, a duct for temperature / humidity control, and the like. An adjustment unit 22 is arranged.

  The shelf units U1, U2, and U3 are configured such that various units for performing pre-processing and post-processing of the processing performed in the liquid processing units U4 and U5 are stacked in a plurality of stages, for example, 10 stages. A heating unit (HP) for heating (baking) the wafer W, a cooling unit (CPL) for cooling the wafer W, and the like are included. Further, as shown in FIG. 2, for example, the liquid processing units U4 and U5 include a bottom antireflection film coating unit (BCT) 23 for coating an antireflection film on a chemical solution storage unit such as a resist or a developer, and a coating unit ( COT) 24, a developing unit (DEV) 25 for supplying a developing solution to the wafer W and developing it, and the like are stacked in a plurality of stages, for example, five stages. The development processing apparatus 50 according to the present invention is provided in a development unit (DEV) 25.

<First Embodiment>
FIG. 3 is a schematic cross-sectional view showing a first embodiment of the development processing apparatus according to the present invention, and FIG. 4 is a schematic plan view of the development processing apparatus.

  As shown in FIGS. 3 and 4, the development processing apparatus 50 includes a substrate holding portion that sucks and holds the center portion on the back side of the wafer W in a casing 51 having a carry-in / out port 51 a for the wafer W and holds it horizontally. A spin chuck 40 is provided. A shutter 51b is disposed at the loading / unloading port 51a so as to be openable and closable.

  The spin chuck 40 is connected to a rotation mechanism 42 such as a servo motor via a shaft 41 and is configured to be rotatable while the wafer W is held by the rotation mechanism 42. The rotation mechanism 42 is electrically connected to a controller 60 that is a control means, and the number of rotations of the spin chuck 40 is controlled based on a control signal from the controller 60.

  A cup 43 is provided so as to surround the side of the wafer W held by the spin chuck 40. The cup 43 includes a cylindrical outer cup 43a and a cylindrical inner cup 43b whose upper side is inclined inward, and the outer cup 43a is connected to the lower end of the outer cup 43a by an elevating mechanism 44 such as a cylinder. The inner cup 32 is configured to be lifted and lowered by being pushed up by a step formed on the inner peripheral surface of the lower end side of the outer cup 43a. The elevating mechanism 44 is electrically connected to the controller 60, and is configured such that the outer cup 43a moves up and down based on a control signal from the controller 60.

  A circular plate 45 is provided on the lower side of the spin chuck 40, and a liquid receiving portion 46 whose cross section is formed in a concave shape is provided around the entire circumference of the circular plate 45. A drain discharge port 47 is formed on the bottom surface of the liquid receiving part 46, and the developer and the rinse liquid stored in the liquid receiving part 46 after falling off from the wafer W or being shaken off are stored via the drain discharge port 47. Discharged outside the device. A ring member 48 having a mountain cross section is provided outside the circular plate 45. Although not shown, elevating pins that are, for example, three substrate support pins penetrating the circular plate 45 are provided, and the wafer W is spin chucked by the cooperative action of the elevating pins and a substrate transfer means (not shown). 40.

  On the other hand, on the upper side of the wafer W held by the spin chuck 40, a developer supply nozzle 52 (hereinafter referred to as a developer) that can be moved up and down and horizontally so as to face the center of the surface of the wafer W through a gap. Nozzle 52). In this case, the developing nozzle 52 has a slit-like discharge port (not shown) for discharging (supplying) the developer in a strip shape. For example, the discharge ports are arranged such that the length direction thereof extends from the central portion of the wafer W to the outer peripheral portion. In addition, the discharge port may cross not only when extending along a straight line (radius) from the center portion of the wafer W to the outer peripheral portion but also with a slight angle with respect to the straight line.

  The developing nozzle 52 is supported on one end side of the nozzle arm 54A, and the other end side of the nozzle arm 54A is connected to a moving base 55A provided with a lifting mechanism (not shown). A nozzle moving mechanism 56A such as a ball screw or a timing belt is configured to be movable in the lateral direction along a guide member 57A extending in the X direction. With this configuration, by driving the nozzle moving mechanism 56A, the developing nozzle 52 moves along a straight line (radius) from the center of the wafer W toward the outer periphery.

  Note that a standby portion 59A of the developing nozzle 52 is provided on one outer side of the cup 43, and the nozzle tip portion of the developing nozzle 52 is cleaned by this standby portion 59A.

  A rinse that discharges (supplies) a rinsing liquid that is a cleaning liquid, such as pure water, on the upper side of the wafer W held by the spin chuck 40 so as to face the central portion of the surface of the wafer W via a gap. A nozzle 58 and an airflow induction diffusing portion 53 (hereinafter referred to as a diffuser 53) adjacent to the rinse nozzle 58 in parallel are provided so as to be movable up and down and horizontally. In this case, as shown in FIG. 5, the diffuser 53 is formed of a plate-like member that is inclined downward toward the discharge port side of the rinse nozzle 58, and the air flow A generated by the rotation of the wafer W is purified water. It is formed so as to be induced and diffused in the liquid film F of DIW.

  The rinse nozzle 58 and the diffuser 53 are held in parallel with each other on one end side of the nozzle arm 54B, and the other end side of the nozzle arm 54B is connected to a moving base 55B having a lifting mechanism (not shown). Further, the moving base 55B can be moved laterally along a guide member 57B extending in the X direction by a nozzle moving mechanism 56B such as a ball screw or a timing belt, that is, from the center of the wafer W toward the outer peripheral edge of the substrate. It is configured to be movable in the radial direction. A standby portion 59B of the rinse nozzle 58 is provided on one outer side of the cup 43.

  The developing nozzle 52 is connected to a developer supply source 71 via a developer supply pipe 70 provided with an on-off valve V. The rinse nozzle 58 is provided with a first open / close valve V1 in a pure water supply pipe 72 that connects the rinse nozzle 58 and a pure water supply source 73 as a cleaning liquid supply source.

  The nozzle moving mechanisms 56A and 56B and the on-off valves V and V1 are electrically connected to the controller 60. The horizontal movement and rinsing of the developing nozzle 52 are performed based on control signals stored in the controller 60 in advance. The nozzle 58 and the diffuser 53 are horizontally moved, and the on-off valves V and V1 are driven to open and close.

  Next, an operation mode of the development processing apparatus 50 configured as described above will be described. First, the nozzle moving mechanism 56A is driven to move the developing nozzle 52 to a position above the center of the wafer surface, and the developing solution is discharged (supplied) from the developing nozzle 52 onto the surface of the rotating wafer W. Is moved along a straight line (radius) from the central portion of the wafer W toward the outer peripheral portion, and development processing is performed. After this development processing, the nozzle moving mechanism 56B is driven to move the rinse nozzle 58 and the diffuser 53 to a position above the center of the wafer surface, and a rinse liquid, that is, pure water is discharged from the rinse nozzle 58 onto the surface of the rotating wafer W ( At the same time, the diffuser 53 induces and diffuses the airflow A generated by the rotation of the wafer W into the liquid film F of the pure water DIW. As a result, the developer containing the resist-dissolved component on the wafer surface is washed away by the pure water DIW discharged (supplied) from the rinse nozzle 58, and at the same time, the air current A induced and diffused by the diffuser 53 is applied to the liquid film F to obtain pure water. Promotes drying of DIW. Thereafter, the wafer W is rotated at a high speed by driving the rotation mechanism 42, for example, a rotation speed is set to 2000 rpm, and a spin drying process for shaking off the liquid on the wafer surface is performed.

  Next, a procedure for processing the wafer W using the coating / developing apparatus will be briefly described with reference to FIGS. Here, a case where a bottom antireflection film (BARC) is formed on the surface of the wafer W and a non-top coat resist is applied to the upper layer will be described. First, for example, when the carrier 10 containing 25 wafers W is placed on the placement unit 11, the lid of the carrier 10 is removed together with the opening / closing unit 12, and the wafer W is taken out by the delivery means A1. Then, the wafer W is delivered to the main transfer means A2 via a delivery unit (not shown) that forms one stage of the shelf unit U1, and is placed on the surface of the wafer W by a unit (BCT) 23 as a pretreatment of the coating treatment. An antireflection film (BARC) is formed. After that, the main transfer unit A2 transfers the wafer W to a heat treatment unit forming one shelf of the shelf units U1 to U3, pre-bake (CLHP), and after cooling, the main transfer unit A2 applies the wafer W to the coating unit (COT). Then, a non-top coat resist is applied to the entire surface of the wafer W in a thin film shape. After that, after being transported to the heat processing unit forming one shelf of the shelf units U1 to U3 by the main transport means A2, prebaked (CLHP), and further cooled, the interface unit 3 via the delivery unit of the shelf unit U3. It is conveyed to. In the interface unit 3, the first wafer transfer unit 30 </ b> A and the second wafer transfer unit 30 </ b> B of the first transfer chamber 3 </ b> A and the second transfer chamber 3 </ b> B are transferred to the exposure unit 4 and face the surface of the wafer W. Thus, exposure means (not shown) is arranged to perform immersion exposure. The wafer W that has been subjected to the immersion exposure is transported to the main transport means A3 through the reverse path and is transported into the developing unit (DEV) 25. As described above, the wafer W carried into the development unit (DEV) 25 is moved by the development processing apparatus 50 after the development processing, and the rinse nozzle 58 and the diffuser 53 are moved to a position above the center of the wafer surface to rotate. The pure water is discharged (supplied) from the rinse nozzle 58 onto the surface of W, and at the same time, the air flow A generated by the rotation of the wafer W is induced and diffused into the liquid film F of the pure water DIW by the diffuser 53 to be washed and dried. A predetermined resist pattern is formed.

  Thereafter, the wafer W is unloaded from the developing unit (DEV) 25 by the main transfer unit A3, and returned to the original carrier 10 on the mounting portion 11 via the main transfer unit A2 and the transfer unit A1, and a series of coating operations.・ End development processing.

  In the above embodiment, the case where the bottom antireflection film (BARC) is formed on the surface of the wafer W and the resist layer is formed on the surface has been described, but even in the case where the bottom antireflection film (BARC) is not provided, The same effect as the above embodiment can be obtained. The processing procedure in this case is processed in the order of resist coating process → pre-baking process → immersion exposure process → post-exposure baking process → developing process (developing process → cleaning / drying process).

Second Embodiment
FIG. 6 is a schematic cross-sectional view showing a second embodiment of the development processing apparatus according to the present invention, and FIG. 7 is a schematic plan view of the development processing apparatus.

  In the development processing apparatus 50A of the second embodiment, a diffuser 53 and an inert gas nozzle 80 which are adjacent to the rinse nozzle 58 and parallel to the rinse nozzle 58 are provided, and the diffuser 53 and the inert gas nozzle 80 cooperate with each other. Then, an inert gas discharged (supplied) from the inert gas nozzle 80, for example, nitrogen (N2) gas, is induced and diffused into the liquid film F of pure water DIW discharged (supplied) from the rinse nozzle 58, so that the drying zone D is formed. This is the case where it is formed.

  In this case, as shown in FIG. 8, the diffuser 53 is formed of a plate-like member that is inclined downward toward the discharge port side of the rinse nozzle 58. Further, the inert gas nozzle 80 (hereinafter referred to as N2 gas nozzle 80) is arranged in parallel with the diffuser 53 formed of a plate-like member (FIG. 8A), or is disposed horizontally. It has a structure {FIG. 8 (b)} in which N2 gas is discharged toward the diffuser 53 formed of a plate-like member.

  The N2 gas discharged (supplied) from the N2 gas nozzle 80 in cooperation with the diffuser 53 configured as described above and the N2 gas nozzle 80 is a liquid film F of pure water DIW discharged (supplied) from the rinse nozzle 58. To form a dry zone D.

  The rinse nozzle 58, the diffuser 53, and the N2 gas nozzle 80 are held in parallel with each other on one end side of the nozzle arm 54B, and the other end side of the nozzle arm 54B has a moving base 55B provided with a lifting mechanism (not shown). Furthermore, the moving base 55B can be moved laterally along a guide member 57B extending in the X direction by a nozzle moving mechanism 56B such as a ball screw or a timing belt, that is, from the center of the wafer W to the substrate. It is comprised so that it can move to radial direction toward the outer periphery. A standby portion 59B of the rinse nozzle 58 is provided on one outer side of the cup 43.

  The N2 gas nozzle 80 is connected to an N2 gas supply source 74 via an N2 gas supply pipe 75 provided with a second on-off valve V2.

  In the second embodiment, the other parts are the same as those in the first embodiment, so the same parts are denoted by the same reference numerals and description thereof is omitted.

  In the second embodiment, the nozzle moving mechanisms 56A and 56B and the on-off valves V, V1, and V2 are electrically connected to the controller 60, respectively, and are based on control signals stored in advance in the controller 60. The developing nozzle 52 is horizontally moved, the rinsing nozzle 58 and the diffuser 53 are horizontally moved, and the on-off valves V, V1, and V2 are driven to open and close.

  According to the development processing apparatus 50A of the second embodiment, after the development processing, the rinse nozzle 58, the diffuser 53, and the N2 gas nozzle 80 are moved to a position above the center of the wafer surface, and the surface of the rotating wafer W is moved from the rinse nozzle 58 to the surface. At the same time as the pure water is discharged (supplied), the diffuser 53 and the N2 gas nozzle 80 cooperate to discharge the N2 gas discharged (supplied) from the N2 gas nozzle 80 and the pure water DIW discharged (supplied) from the rinse nozzle 58. A dry zone D can be formed by induction diffusion into the liquid film F.

  In the above description, the case of the single plate-like diffuser 53 and the N2 gas nozzle 80 has been described. However, as shown in FIGS. 9A and 9B, the diffuser 53 </ b> A is arranged in parallel with a gap 76. (The drawing shows the case of three sheets) and the supply port (discharge port) 80a of the N2 gas nozzle 80 may be disposed in the gap 76 between the members. By comprising in this way, since supply_amount | feed_rate (discharge amount) of N2 gas can be increased, the drying area D can be expanded further and drying can be promoted.

  The diffuser 53 is not necessarily a plate-like member, and may have another shape. For example, a substantially U-shaped member 53a (see FIG. 10A) that houses the N2 gas nozzle 80 on the inner side, a member 53b that has a holding groove 53h into which at least a part of the N2 gas nozzle 80 is inserted {FIG. b)}, a substantially arcuate member 53c having a cross section that accommodates the N2 gas nozzle 80 on the inner side {see FIG. 10C}, and a first arcuate part 53i having a first cross section that accommodates the N2 gas nozzle 80 on the inner side; , A member 53d having a substantially W-shaped cross section having a second cross-sectional substantially arc-shaped portion 53j and a third cross-sectional substantially arc-shaped portion 53k respectively connected to both side ends of the first cross-sectional substantially arc-shaped portion 53i {FIG. (D) reference} or a member 53e {see FIG. 10 (e)} having a triangular wave-shaped uneven portion 53l continuous in the width direction on the back surface side with respect to the rinse nozzle 58 side.

  Further, as shown in FIG. 11, the airflow induction diffusing portion is formed by a hollow member 53f having a hollow chamber 53m connected to the N2 gas nozzle 80 and a gas discharge port 53 provided at the bottom 53n of the hollow chamber 53m. Also good. In this case, an inclined surface 53p having a downward slope toward the supply port 58a of the rinse nozzle 58 is provided on one side of the hollow member 53f, and a large number of gas discharge ports 53 are provided at the bottom 53n of the cavity chamber 53m.

  By configuring as described above, after the N2 gas supplied from the N2 gas nozzle 80 is once stored in the cavity chamber 53m, it can be discharged from the gas discharge port 53 and sprayed onto the liquid film F of pure water DIW. The induction diffusion region of the N2 gas can be made uniform to promote drying.

  Further, as shown in FIG. 12, the airflow induction diffusing portion may be formed by a hollow member 53g having a hollow chamber 53m connected to the N2 gas nozzle 80 and a gas discharge port 53a provided at the bottom 53n of the hollow chamber 53m. Good. In this case, the hollow member 53g is formed in a flat box shape parallel to the rinse nozzle 58, and the N2 gas nozzle 80 is connected to the rinse nozzle 58 in the hollow member 53g and the rear upper corner portion 53q in the moving direction of the airflow induction diffusion portion, A slit-like gas discharge port 53 s that is continuous with the bottom 53 n and the side wall 53 r ahead in the movement direction is provided.

  By configuring as described above, the N2 gas supplied from the N2 gas nozzle 80 can be temporarily stored in the cavity chamber 53m, and then discharged from the gas discharge port 53s and sprayed onto the liquid film F of pure water DIW. At this time, since the N2 gas is sprayed in the moving direction of the rinse nozzle 58 and the airflow induction diffusion unit, the N2 gas induction diffusion region can be made uniform to promote drying, and the drying region on the center side of the wafer W can be set. It can be surely secured.

<Third Embodiment>
FIG. 13 is a schematic sectional view showing an essential part of a third embodiment of the development processing apparatus according to the present invention. The third embodiment is a case where a dry region is formed in the center of the wafer W before pure water is supplied from the rinse nozzle 58 to the wafer surface and N2 gas is supplied from the N2 gas nozzle 80 at the same time.

  That is, the development processing apparatus 50B of the third embodiment includes an auxiliary N2 gas nozzle 80 that is an auxiliary inert gas supply nozzle adjacent to the rinse nozzle 58, and the moving mechanism that moves the auxiliary N2 gas nozzle 80A to the center of the wafer W. (Not shown in FIG. 13), and a third on-off valve V3 interposed in the N2 gas supply pipe connecting the auxiliary N2 gas nozzle 80A and the N2 gas supply source 74, and a moving mechanism and a first This is a case where the controller 60 is electrically connected to the three on-off valves V3. In the third embodiment, the other parts are the same as in the second embodiment, so the same parts are denoted by the same reference numerals and description thereof is omitted.

  According to the development processing apparatus 50B of the third embodiment configured as described above, the controller 60 supplies (discharges) pure water to the wafer surface from the rinse nozzle 58 and before supplying N2 gas from the N2 gas nozzle 80. Further, N2 gas is supplied from the auxiliary N2 gas nozzle 80A to the central portion of the wafer W to form a dry zone at the central portion of the wafer W, and then pure water is supplied (discharged) from the rinse nozzle 58 to the wafer surface. By supplying (discharging) N2 gas from the gas nozzle, drying can be promoted.

  In FIG. 13, the case where the N2 gas nozzle 80 and the auxiliary N2 gas nozzle 80A are connected to the N2 gas supply source 74 via the N2 gas supply pipe 75 has been described, but as shown in FIG. The auxiliary N2 gas nozzle 80A is connected from the N2 gas supply pipe 75 connecting the N2 gas supply source 74 via the branch pipe 77, and the second on-off valve Vt and the second on-off valve are connected to the branch portion of the N2 gas supply pipe 75 and the branch pipe 77. A switching valve V4 that also serves as the on-off valve V3 may be provided. A controller 60 is electrically connected to the switching valve V4, and the switching valve V4 is controlled to be switched based on a control signal from the controller 60.

  According to the development processing apparatus configured as described above, before the pure water is supplied (discharged) from the rinse nozzle 58 to the wafer surface and at the same time the N2 gas is supplied from the N2 gas nozzle 80, the switching valve is controlled by a control signal from the controller 60. V4 is switched to the auxiliary N2 gas nozzle 80A side, N2 gas is supplied from the auxiliary N2 gas nozzle 80A to the central portion of the wafer W to form a dry zone at the central portion of the wafer W, and then the control signal from the controller 60 generates the first signal. 1 is opened and the switching valve V4 is switched to the N2 gas nozzle 80 side to supply (discharge) pure water to the wafer surface from the rinse nozzle 58 and simultaneously supply (discharge) N2 gas from the N2 gas nozzle. , Drying can be promoted.

1 is a schematic plan view showing an entire processing system in which an exposure processing apparatus is connected to a coating / development processing apparatus to which a development processing apparatus according to the present invention is applied. It is a schematic perspective view of the said processing system. 1 is a schematic cross-sectional view showing a first embodiment of a development processing apparatus according to the present invention. 2 is a schematic plan view showing the development processing apparatus of the first embodiment. FIG. It is a schematic perspective view (a) which shows the rinse nozzle and diffuser in 1st Embodiment, and sectional drawing (b) which follows the II line | wire of (a). It is a schematic sectional drawing which shows 2nd Embodiment of the developing device which concerns on this invention. 2 is a schematic plan view showing the development processing apparatus of the first embodiment. FIG. It is a schematic side view which shows another example of the rinse nozzle, diffuser, and N2 gas nozzle in this invention. It is a schematic side view which shows another example of the rinse nozzle, diffuser, and N2 gas nozzle in this invention. It is a cross-sectional perspective view which shows another shape of the diffuser in this invention. It is the schematic perspective view (a) and schematic sectional drawing (b) at the time of forming the diffuser in this invention with a hollow member. It is the schematic perspective view (a) and schematic sectional drawing (b) at the time of forming the diffuser in this invention with another hollow member. It is a schematic sectional drawing which shows the principal part of 3rd Embodiment of the developing device which concerns on this invention. It is a schematic sectional drawing which shows another principal part of 3rd Embodiment.

Explanation of symbols

W Semiconductor wafer (substrate)
40 Spin chuck (substrate holder)
42 Rotating Mechanism 50, 50A, 50B Development Processing Device 52 Development Nozzle 53 Diffuser (Airflow Induction Diffusion Unit)
53a Cross-sectional substantially U-shaped member 53b Member having holding groove 53h Cross-sectional substantially arc-shaped member 53d Cross-sectional substantially mountain-shaped member 53e Member having wave-shaped uneven portion 53l Hollow member 53m Hollow portion 53n Bottom portion 53o Gas discharge port 53s Slit shape Gas discharge port 56A Nozzle moving mechanism 56B Nozzle moving mechanism 58 Rinse nozzle 58a Supply port 60 Controller (control means)
72 Pure water supply pipe (cleaning liquid supply pipe)
73 Pure water supply source (cleaning liquid supply source)
74 N2 gas supply source (inert gas supply source)
75 N2 gas supply pipe (inert gas supply pipe)
76 Clearance 80 N2 gas nozzle (inert gas nozzle)
80A auxiliary N2 gas nozzle (auxiliary inert gas supply nozzle)
V1 first on-off valve V2 second on-off valve V3 third on-off V4 valve switching valve (second on-off valve / third on-off valve)

Claims (15)

In the development processing method of supplying a cleaning solution to the surface of the substrate and performing cleaning after supplying the developer to the exposed surface of the substrate and performing development,
While supplying the cleaning liquid from the upper part of the central part of the substrate while rotating the substrate holding part that holds the substrate horizontally around the vertical axis, the airflow generated by the rotation of the substrate by the airflow induction diffusion part adjacent to the cleaning liquid supply nozzle Inductively diffuse into the liquid film of the cleaning solution,
The substrate is cleaned and dried by moving the cleaning liquid supply nozzle and the airflow guide diffusing portion in parallel in the radial direction from the center of the substrate toward the outer periphery of the substrate.
A development processing method characterized by the above. In the development processing method of supplying a cleaning solution to the surface of the substrate and performing cleaning after supplying the developer to the exposed surface of the substrate and performing development,
While supplying the cleaning liquid from the cleaning liquid supply nozzle from above the central part of the substrate while rotating the substrate holding part holding the substrate horizontally around the vertical axis, the air flow induction diffusion part adjacent to the cleaning liquid supply nozzle and the air flow induction diffusion respectively. The inert gas is guided and diffused into the liquid film by an inert gas nozzle that guides an air flow of the inert gas to the liquid film of the cleaning liquid in cooperation with the unit,
Cleaning and drying the substrate by simultaneously moving the cleaning liquid supply nozzle, the airflow induction diffusion unit, and the inert gas nozzle in the radial direction from the center of the substrate toward the outer periphery of the substrate;
A development processing method characterized by the above. The development processing method according to claim 2.
Before supplying the cleaning liquid to the substrate surface from the cleaning liquid supply nozzle and simultaneously supplying the inert gas from the inert gas nozzle, the inert gas is supplied from the auxiliary inert gas nozzle to the center of the substrate to provide a dry area at the center of the substrate. A development processing method comprising: forming, and thereafter supplying a cleaning liquid to the substrate surface from the cleaning liquid supply nozzle and simultaneously supplying an inert gas from an inert gas nozzle. In a development processing apparatus for supplying a developing solution to the exposed surface of the substrate and performing development, and then supplying a cleaning solution to the surface of the substrate for cleaning.
A substrate holder for horizontally holding the substrate;
A rotation mechanism for rotating the substrate holder around a vertical axis;
A cleaning liquid supply nozzle that is located above the substrate and supplies a cleaning liquid to the substrate surface;
An airflow induction diffusing section that is adjacent to the cleaning liquid supply nozzle in parallel and that induces and diffuses the airflow generated by the rotation of the substrate into the liquid film of the cleaning liquid;
A moving mechanism for holding the cleaning liquid supply nozzle and the airflow guide diffusion part in parallel with each other, and moving the cleaning liquid supply nozzle and the airflow guide diffusion part in a radial direction from the center of the substrate toward the outer peripheral edge of the substrate;
An opening / closing valve interposed in a cleaning liquid supply pipe connecting the cleaning liquid supply nozzle and the cleaning liquid supply source, and a control means connected to the moving mechanism;
The control means supplies the cleaning liquid to the central portion of the substrate that rotates about the vertical axis, and at the same time induces and diffuses the airflow generated by the rotation of the substrate into the liquid film of the cleaning liquid, A development processing apparatus, wherein the substrate is cleaned and dried by moving the substrate in parallel in the radial direction from the center of the substrate toward the outer peripheral edge of the substrate. In a development processing apparatus for supplying a developing solution to the exposed surface of the substrate and performing development, and then supplying a cleaning solution to the surface of the substrate for cleaning.
A substrate holder for horizontally holding the substrate;
A rotation mechanism for rotating the substrate holder around a vertical axis;
A cleaning liquid supply nozzle that is located above the substrate and supplies a cleaning liquid to the substrate surface;
An airflow induction diffusion part adjacent to the cleaning liquid supply nozzle;
An inert gas nozzle for guiding an inert gas stream to the liquid film of the cleaning liquid in cooperation with the airflow induction diffusion unit;
A moving mechanism that holds the cleaning liquid supply nozzle, the airflow induction diffusion unit, and the inert gas nozzle in parallel with each other and moves in a radial direction from the center of the substrate toward the outer periphery of the substrate;
A first on-off valve interposed in the cleaning liquid supply pipe connecting the rotating mechanism, the cleaning liquid supply nozzle and the cleaning liquid supply source; and an inert gas supply pipe connecting the inert gas nozzle and the inert gas supply source. A second on-off valve interposed in the control means and a control means connected to the moving mechanism,
The control means supplies the cleaning liquid to the central portion of the substrate that rotates about the vertical axis, and at the same time, the airflow induction diffusing section and the inert gas nozzle cooperate to induce and diffuse the inert gas into the liquid film of the cleaning liquid. Cleaning and drying the substrate by simultaneously moving the cleaning liquid supply nozzle, the airflow induction diffusing unit and the inert gas nozzle in the radial direction from the central part of the substrate toward the outer peripheral edge of the substrate. A development processing apparatus. The development processing apparatus according to claim 5.
An auxiliary inert gas supply nozzle adjacent to the cleaning liquid supply nozzle;
A moving mechanism for moving the auxiliary inert gas supply nozzle to the center of the substrate;
And further comprising a third on-off valve interposed in an inert gas supply pipe connecting the auxiliary inert gas supply nozzle and the inert gas supply source,
The control means is connected to the moving mechanism and the third on-off valve,
Before supplying the cleaning liquid from the cleaning liquid supply nozzle to the substrate surface by the control means and simultaneously supplying the inert gas from the inert gas nozzle, the substrate is supplied with the inert gas from the auxiliary inert gas nozzle to the center of the substrate. A development processing apparatus, wherein a dry region is formed in a central portion, and then an inert gas is supplied from the inert gas nozzle at the same time as the cleaning liquid is supplied to the substrate surface from the cleaning liquid supply nozzle. The development processing apparatus according to any one of claims 4 to 6,
A development processing apparatus, wherein the airflow induction diffusion part is a flat plate member. In the development processing apparatus according to claim 5 or 6,
The airflow induction diffusing section is a plurality of members parallel to each other with a gap, and a development processing apparatus having an inert gas nozzle supply port disposed in the gap between the members. In the development processing apparatus according to claim 5 or 6,
The development processing apparatus characterized in that the airflow induction diffusing portion is a substantially U-shaped member that houses an inert gas nozzle inward. In the development processing apparatus according to claim 5 or 6,
The developing apparatus according to claim 1, wherein the airflow guide diffusion part is a member having a holding groove into which at least a part of the inert gas nozzle is inserted. In the development processing apparatus according to claim 5 or 6,
The development processing apparatus according to claim 1, wherein the airflow guide diffusion part is a member having a substantially arcuate cross section for accommodating the inert gas nozzle on the inner side. In the development processing apparatus according to claim 5 or 6,
A first cross-section substantially arc-shaped portion in which the airflow induction diffusion portion accommodates the inert gas nozzle on the inner side; a second cross-section substantially arc-shaped portion that is continuous with both side ends of the first cross-section substantially arc-shaped portion; A development processing apparatus, wherein the development processing apparatus is a member having a third arcuate section in cross section. In the development processing apparatus according to claim 5 or 6,
The developing apparatus according to claim 1, wherein the airflow guide diffusion portion is a member having a wave-shaped uneven portion continuous in the width direction on the back surface side with respect to the cleaning liquid supply nozzle side. In the development processing apparatus according to claim 5 or 6,
The airflow induction diffusion part is formed by a hollow member having a hollow chamber connected to an inert gas nozzle, and the hollow member is provided with an inclined surface having a downward slope on one side thereof toward the supply port of the cleaning liquid supply nozzle, A development processing apparatus comprising a large number of gas discharge ports at the bottom of a hollow chamber. In the development processing apparatus according to claim 5 or 6,
The airflow induction diffusion part is formed by a hollow member having a hollow chamber connected to an inert gas nozzle, and the hollow member is formed in a flat box shape parallel to the cleaning liquid supply nozzle, and the cleaning liquid supply nozzle in the hollow member and The inert gas nozzle is connected to the rear upper corner in the moving direction of the airflow induction diffusing section, and a slit-like gas discharge port connected to the bottom of the hollow chamber and the side wall in the moving direction is provided. Development processing apparatus.

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