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JP5108909B2 - Backside foreign matter detection method, backside foreign matter detection device, and coating device - Google Patents
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JP5108909B2 - Backside foreign matter detection method, backside foreign matter detection device, and coating device - Google Patents

Backside foreign matter detection method, backside foreign matter detection device, and coating device Download PDF

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JP5108909B2
JP5108909B2 JP2010055467A JP2010055467A JP5108909B2 JP 5108909 B2 JP5108909 B2 JP 5108909B2 JP 2010055467 A JP2010055467 A JP 2010055467A JP 2010055467 A JP2010055467 A JP 2010055467A JP 5108909 B2 JP5108909 B2 JP 5108909B2
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substrate
foreign matter
received light
light
slit nozzle
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JP2011192697A (en
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慶崇 大塚
寿史 稲益
貴生 高木
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Tokyo Electron Ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C5/00Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work
    • B05C5/02Apparatus in which liquid or other fluent material is projected, poured or allowed to flow on to the surface of the work the liquid or other fluent material being discharged through an outlet orifice by pressure, e.g. from an outlet device in contact or almost in contact, with the work
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05BSPRAYING APPARATUS; ATOMISING APPARATUS; NOZZLES
    • B05B1/00Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means
    • B05B1/02Nozzles, spray heads or other outlets, with or without auxiliary devices such as valves, heating means designed to produce a jet, spray, or other discharge of particular shape or nature, e.g. in single drops, or having an outlet of particular shape
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C13/00Means for manipulating or holding work, e.g. for separate articles
    • B05C13/02Means for manipulating or holding work, e.g. for separate articles for particular articles
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B05SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05CAPPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05C21/00Accessories or implements for use in connection with applying liquids or other fluent materials to surfaces, not provided for in groups B05C1/00 - B05C19/00
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84Systems specially adapted for particular applications
    • G01N21/88Investigating the presence of flaws or contamination

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  • General Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
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  • Biochemistry (AREA)
  • Immunology (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Pathology (AREA)
  • Coating Apparatus (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
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Description

本発明は、浮上ステージ上で被処理基板に処理液を塗布する塗布装置に係わり、特に基板の裏面に付着している望ましくない異物を検出するための裏面異物検出方法および裏面異物検出装置に関する。   The present invention relates to a coating apparatus that applies a processing liquid to a substrate to be processed on a floating stage, and more particularly, to a backside foreign matter detection method and a backside foreign matter detection device for detecting undesirable foreign matter adhering to the backside of a substrate.

LCD等のフラットパネルディスプレイ(FPD)の製造プロセスにおけるフォトリソグラフィー工程には、スリット状の吐出口を有する長尺形のスリットノズルを用いて被処理基板(ガラス基板等)上にレジスト液を塗布するスピンレスの塗布法がよく用いられている。   In a photolithography process in a manufacturing process of a flat panel display (FPD) such as an LCD, a resist solution is applied onto a substrate to be processed (such as a glass substrate) using a long slit nozzle having a slit-like discharge port. A spinless coating method is often used.

このようなスピンレス塗布法の一形式として、基板を支持するためのステージに基板浮上機構を組み込み、この浮上ステージ上で基板を空中に浮かせて水平な一方向(ステージ長手方向)に搬送し、搬送途中の所定位置でステージ上方に設置したスリットノズルより直下を通過する基板に向けてレジスト液を帯状に吐出させることにより、基板上の一端から他端までレジスト液を塗布するようにした浮上方式が知られている。   As one form of such a spinless coating method, a substrate floating mechanism is incorporated in the stage for supporting the substrate, and the substrate is floated in the air on this floating stage and conveyed in one horizontal direction (stage longitudinal direction). There is a levitation method in which the resist solution is applied from one end to the other end on the substrate by discharging the resist solution in a strip shape toward the substrate that passes directly below the slit nozzle installed above the stage at a predetermined position in the middle. Are known.

かかる浮上方式のスピンレス塗布法において、基板上にレジスト液の塗布膜を設定通りの膜厚で均一に形成するには、スリットノズルの吐出口と基板との間に設ける通常100μm前後の微小なギャップを精確に設定値またはその付近に維持することが要求される。   In such a levitation-type spinless coating method, in order to uniformly form a resist solution coating film on a substrate with a set film thickness, a small gap of usually about 100 μm provided between the discharge port of the slit nozzle and the substrate is used. Is accurately maintained at or near the setpoint.

この要求条件を満たすために、浮上方式のスピンレス塗布法を採用するレジスト塗布装置は、浮上ステージの略全域に高圧または正圧の気体たとえばエアを噴出する噴出口を所定の密度で多数設けるだけでなく、浮上ステージ上でスリットノズルの直下およびその前後のエリアとして設定される塗布領域には、負圧でエアを吸い込む吸引口を噴出口に混在させている。そして、該塗布領域内では、そこを通過する基板に対して、噴出口より加えられる垂直上向きの圧力と吸引口より加えられる垂直下向きの圧力とのバランスをとって、基板に与える浮上圧力を精細に制御し、基板の浮上高を設定値(通常50μm以下)に合わせるようにしている(たとえば特許文献1)。   In order to satisfy this requirement, a resist coating apparatus that employs a levitation-type spinless coating method simply provides a large number of jet nozzles for jetting high-pressure or positive-pressure gas, such as air, at a predetermined density over substantially the entire surface of the levitation stage. Rather, a suction port for sucking air at a negative pressure is mixed in the ejection port in the application region set as the area immediately below and before and behind the slit nozzle on the floating stage. In the application region, the floating pressure applied to the substrate is finely balanced by balancing the vertical upward pressure applied from the jet port and the vertical downward pressure applied from the suction port with respect to the substrate passing therethrough. The flying height of the substrate is adjusted to a set value (usually 50 μm or less) (for example, Patent Document 1).

特開2007−190483JP2007-190483A

上記のような浮上方式のスピンレス塗布法においても、他のスピンレス塗布法と同様に、塗布処理を受ける直前の基板に異物が付着していることがあり、スリットノズルの先端(吐出口)に異物または基板の上面が擦ると、スリットノズルが損傷を受けることがある。スリットノズルの吐出口に少しでも傷が付くと、帯状吐出流が不均一になって、塗布膜の膜質低下に直結する。スリットノズルは非常に高価であり、その部品交換を低コストで簡便に行えるものではないので、基板に付着する異物の早期検出は重要な課題となっている。   In the above-described spin-less spin coating method, as with other spinless coating methods, foreign matter may adhere to the substrate immediately before being subjected to the coating process, and foreign matter may be present at the tip (discharge port) of the slit nozzle. Or, when the upper surface of the substrate is rubbed, the slit nozzle may be damaged. If even a slight damage is made to the discharge port of the slit nozzle, the belt-like discharge flow becomes non-uniform, which directly leads to the deterioration of the film quality of the coating film. Since the slit nozzle is very expensive and it is not possible to easily replace the parts at a low cost, early detection of foreign matters adhering to the substrate is an important issue.

基板上の異物には、基板の表面(上面)に付着する表面異物と、基板の裏面(下面)に付着する裏面異物の2種類がある。このうち、表面異物は、基板の上面を掠めるように光ビームを横断させる光センサを用いて、光ビームの遮光分または受光量減少分の大きさから有害な(つまり、スリットノズルを直接擦って傷を付けるおそれのある)異物を容易に検出できる。したがって、従来の異物検出装置で対応することができる。   There are two types of foreign matter on the substrate: front foreign matter that adheres to the front surface (upper surface) of the substrate and back foreign matter that adheres to the rear surface (lower surface) of the substrate. Among these, the surface foreign matter is harmful from the size of the light beam that is blocked or reduced by using the optical sensor that crosses the light beam so as to give up the upper surface of the substrate (that is, by directly rubbing the slit nozzle). It can easily detect foreign objects that may cause scratches. Therefore, it can be handled by a conventional foreign object detection device.

しかし、裏面異物は、浮上方式のスピンレス塗布法においては、やっかいなものになっている。すなわち、基板をステージに載置して吸着固定する方式のスピンレス塗布法であれば、裏面異物による基板の盛り上がりを表面異物と同視して、上記のような光ビームの遮光分または受光量減少分を所定のしきい値にかけて、有害な(つまり、スリットノズルに基板の上面を擦らせて傷を付けるおそれのある)異物を容易に検出することができる。   However, the backside foreign matter is troublesome in the floating spinless coating method. In other words, if the spinless coating method uses a substrate placed on a stage and is fixed by suction, the rise of the substrate due to the foreign material on the back surface is regarded as a foreign material on the surface, and the light beam is blocked or the received light amount is reduced as described above. Can be easily detected for harmful foreign matters (that is, there is a possibility of scratching the slit nozzle by rubbing the upper surface of the substrate).

ところが、浮上方式のスピンレス塗布法では、基板の浮上搬送による基板のぶれや周囲の振動に起因するノイズ成分が光センサの出力信号に殆ど1に近いSN比で混じるため、光ビームの遮光分または受光量減少分を所定のしきい値にかける従来技術の技法によっては、有害な(スリットノズルに基板の上面を擦らせて傷を付けるおそれのある)裏面異物を精度良く抽出(検出)することはできない。   However, in the spinless coating method of the floating system, noise components due to the shaking of the substrate due to the floating transportation of the substrate and the surrounding vibration are mixed in the output signal of the optical sensor with an S / N ratio close to 1, so Accurate extraction (detection) of harmful backside foreign matter (which may cause scratches by rubbing the top surface of the substrate against the slit nozzle), depending on the prior art technique of reducing the amount of received light to a predetermined threshold I can't.

本発明は、上記のような従来技術の問題点を解決するものであり、浮上方式のスピンレス塗布法においてスリットノズルに基板の上面を擦らせて傷を付けるおそれのある有害な裏面異物を精度よく確実に検出できる裏面異物検出方法、裏面異物検出装置およびこれを用いる塗布装置を提供する。   The present invention solves the above-described problems of the prior art, and accurately removes harmful backside foreign matters that may be scratched by rubbing the top surface of the substrate against the slit nozzle in the floating spinless coating method. Provided are a backside foreign matter detection method, a backside foreign matter detection device, and a coating apparatus using the backside foreign matter detection method capable of reliably detecting.

本発明の第1の観点における裏面異物検出方法は、多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板上に処理液を供給して前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出方法であって、前記浮上ステージを挟んでその両側に対向して配置される投光部と受光部との間で、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を取得する第1の工程と、前記受光量信号に基づいて、前記光ビーム受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビーム受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害裏面異物を検出した旨の警報信号を発生する第2の工程とを有し、前記基準サイズは、高さ方向における基準の受光量減少ピーク値と、横方向における基準の直径サイズとを含む。
本発明の第1の観点における裏面異物検出装置は、多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板に向けて処理液を供給して、前記基板上に前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出装置であって、前記浮上ステージを挟んでその両側に対向して配置される投光部および受光部を有し、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを前記投光部と前記受光部との間で送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を出力する光センサと、前記光センサより出力される前記受光量信号に基づいて、前記光ビームの受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビームの受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害な裏面異物を検出した旨の警報信号を発生する信号処理部とを有し、前記基準サイズは、高さ方向における基準の受光量減少ピーク値と横方向における基準の直径サイズとを含む。
上記第1の観点における裏面異物検出方法または裏面異物検出装置においては、光センサより得られる光ビームの受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、光ビームの受光量の波形の中に、高さ方向における基準の受光量減少ピーク値と横方向における基準の直径サイズとを含む所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、有害な裏面異物を検出した旨の警報信号を発生する。このことにより、受光量信号に含まれるノイズ成分の影響を受けずに、当該逆さ山形プロファイルの元になっている裏面異物がスリットノズルに対して有害な(つまり、スリットノズルに基板の上面を擦らせて傷を付けるおそれのある)異物であるか否かを的確に判別することができる。
The first back surface foreign matter detection method that put the aspect of the present invention is to be processed to pass through the floating region of the floating stage in which a number of ejection ports and a plurality of suction ports arranged in a mixed manner at a predetermined floating height In a coating apparatus for transporting a substrate and supplying a processing liquid onto the substrate passing below a slit nozzle disposed above the floating region to form a coating film of the processing liquid, on the back surface of the substrate A backside foreign matter detection method for detecting a backside foreign matter that is attached and harmful to the slit nozzle at a position upstream of the slit nozzle in the substrate transport direction, on both sides of the levitation stage Between the light projecting unit and the light receiving unit disposed to face each other, a light beam horizontally passing across the upper surface of the substrate passing through the floating region is transmitted and received, and the light beam is received from the light receiving unit. Receiving quantity A first step of obtaining a quantity signal, on the basis of the received light amount signal, a profile waveform of the light receiving amount of the light beam is inverted chevron on the time axis to be monitored, the light receiving amount of the waveform of the light beam upon detecting a magnitude inverted chevron profile that exceeds a predetermined reference size in, it has a second step of generating an alarm signal indicative of the detection of the harmful backside foreign matter, the reference size, The reference light reception amount decrease peak value in the height direction and the reference diameter size in the horizontal direction are included.
The backside foreign matter detection apparatus according to the first aspect of the present invention provides a substrate to be processed so as to pass at a predetermined flying height through a floating region of a floating stage provided with a large number of ejection ports and a large number of suction ports. In a coating apparatus for transporting and supplying a processing liquid toward the substrate passing under a slit nozzle disposed above the floating region, and forming a coating film of the processing liquid on the substrate, A backside foreign matter detection device for detecting a backside foreign matter adhering to the backside of a substrate and harmful to the slit nozzle at a position upstream of the slit nozzle in the substrate transport direction, sandwiching the floating stage And having a light projecting portion and a light receiving portion arranged to face both sides of the light projecting portion and the light receiving portion. Sent and received between The light sensor outputs a received light amount signal representing the received light amount of the light beam from the light receiving unit, and the received light amount waveform of the light beam is a time axis based on the received light amount signal output from the light sensor. The above-mentioned profile having an inverted chevron is monitored, and when the inverted chevron profile with a size exceeding a predetermined reference size is detected in the waveform of the received light amount of the light beam, the harmful backside foreign matter is detected. The reference size includes a reference received light amount decrease peak value in the height direction and a reference diameter size in the horizontal direction.
The Oite the back surface foreign substance detecting method or backside foreign matter detecting device of the first aspect, the profile received light amount of the waveform of the light beams obtained from the optical sensor is inverted chevron on the time axis to be monitored, the light beam It is detrimental when detecting an inverted chevron profile with a size exceeding the specified reference size including the reference received light amount decrease peak value in the height direction and the reference diameter size in the horizontal direction in the received light amount waveform. An alarm signal indicating that a foreign object on the back surface has been detected is generated. As a result, the backside foreign material that is the basis of the inverted chevron profile is harmful to the slit nozzle without being affected by the noise component included in the received light amount signal (that is, the upper surface of the substrate is rubbed against the slit nozzle). It is possible to accurately determine whether or not the foreign object is likely to be damaged.

本発明の第2の観点における裏面異物検出方法は、多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板上に処理液を供給して前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出方法であって、前記浮上ステージを挟んでその両側に対向して配置される投光部と受光部との間で、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を取得する第1の工程と、前記受光量信号に基づいて、前記光ビームの受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビームの受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害な裏面異物を検出した旨の警報信号を発生する第2の工程とを有し、前記浮上高と前記スリットノズルと前記基板との間の塗布ギャップとを足し合わせた値を基準にして、前記有害な裏面異物としての高さ方向のサイズの下限値を設定する。According to a second aspect of the present invention, there is provided a backside foreign object detection method in which a substrate to be processed is passed at a predetermined flying height through a floating area of a floating stage provided with a large number of jet outlets and a large number of suction ports. In a coating apparatus that forms a coating film of the processing liquid by supplying a processing liquid onto the substrate that is transported and passes below a slit nozzle that is disposed above the floating region, and adheres to the back surface of the substrate. A foreign matter detection method for detecting a foreign matter that is harmful to the slit nozzle at a position upstream of the slit nozzle in the substrate transport direction, facing both sides of the levitation stage. Between the light projecting unit and the light receiving unit arranged in a horizontal direction, the light beam horizontally passing across the upper surface of the substrate passing through the floating region is transmitted and received, and the amount of light beam received from the light receiving unit is Receiving A first step of acquiring a quantity signal, and a profile of the light receiving quantity of the light beam, which is an inverted mountain shape on the time axis, based on the received light quantity signal, and monitoring the received light quantity waveform of the light beam A second step of generating an alarm signal indicating that the harmful backside foreign object has been detected when an inverted chevron profile having a size exceeding a predetermined reference size is detected, and the flying height and the The lower limit value of the size in the height direction as the harmful backside foreign matter is set on the basis of a value obtained by adding the application gap between the slit nozzle and the substrate.
本発明の第2の観点における裏面異物検出装置は、多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板に向けて処理液を供給して、前記基板上に前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出装置であって、前記浮上ステージを挟んでその両側に対向して配置される投光部および受光部を有し、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを前記投光部と前記受光部との間で送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を出力する光センサと、前記光センサより出力される前記受光量信号に基づいて、前記光ビームの受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビームの受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害な裏面異物を検出した旨の警報信号を発生する信号処理部とを有し、前記浮上高と前記スリットノズルと前記基板との間の塗布ギャップとを足し合わせた値を基準にして、前記有害な裏面異物としての高さ方向サイズの下限値が設定されている。The backside foreign object detection device according to the second aspect of the present invention provides a substrate to be processed so as to pass through a floating region of a floating stage provided with a large number of jet ports and a large number of suction ports at a predetermined flying height. In a coating apparatus for transporting and supplying a processing liquid toward the substrate passing under a slit nozzle disposed above the floating region, and forming a coating film of the processing liquid on the substrate, A backside foreign matter detection device for detecting a backside foreign matter adhering to the backside of a substrate and harmful to the slit nozzle at a position upstream of the slit nozzle in the substrate transport direction, sandwiching the floating stage And having a light projecting portion and a light receiving portion arranged to face both sides of the light projecting portion and the light receiving portion. Sent and received between The light sensor outputs a received light amount signal representing the received light amount of the light beam from the light receiving unit, and the received light amount waveform of the light beam is a time axis based on the received light amount signal output from the light sensor. The above-mentioned profile having an inverted chevron is monitored, and when the inverted chevron profile with a size exceeding a predetermined reference size is detected in the waveform of the received light amount of the light beam, the harmful backside foreign matter is detected. A signal processing unit that generates an alarm signal, and the height as the harmful backside foreign matter on the basis of a value obtained by adding the flying height and the coating gap between the slit nozzle and the substrate. The lower limit value of the direction size is set.
上記第2の観点における裏面異物検出方法または裏面異物検出装置においては、光センサより得られる光ビームの受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、ビームの受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、有害な裏面異物を検出した旨の警報信号を発生する。ここで、有害な裏面異物としての高さ方向のサイズの下限値は、浮上ステージ上の基板の浮上高と塗布ギャップとを足し合わせた値を基準にして設定される。このことにより、受光量信号に含まれるノイズ成分の影響を受けずに、当該逆さ山形プロファイルの元になっている裏面異物がスリットノズルに対して有害な(つまり、スリットノズルに基板の上面を擦らせて傷を付けるおそれのある)異物であるか否かを的確に判別することができる。In the backside foreign object detection method or backside foreign object detection device according to the second aspect, a profile in which the waveform of the light reception amount of the light beam obtained from the optical sensor is inverted on the time axis is monitored, and the amount of light reception of the beam is monitored. When an inverted chevron profile having a size exceeding a predetermined reference size is detected in the waveform, an alarm signal indicating that a harmful backside foreign object has been detected is generated. Here, the lower limit of the size in the height direction as a harmful backside foreign material is set based on a value obtained by adding the flying height of the substrate on the flying stage and the coating gap. As a result, the backside foreign material that is the basis of the inverted chevron profile is harmful to the slit nozzle without being affected by the noise component included in the received light amount signal (that is, the upper surface of the substrate is rubbed against the slit nozzle). It is possible to accurately determine whether or not the foreign object is likely to be damaged.

本発明の第3の観点における裏面異物検出方法は、多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板上に処理液を供給して前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出方法であって、前記浮上ステージを挟んでその両側に対向して配置される投光部と受光部との間で、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を取得する第1の工程と、前記受光量信号に基づいて、前記光ビームの受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビームの受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害な裏面異物を検出した旨の警報信号を発生する第2の工程とを有し、前記第2の工程は、時間軸上に所定の間隔を置いて設定される複数の抽出点で所定の受光量基準値に対する前記光ビームの受光量の減少分を求める第3の工程と、前記複数の抽出点よりそれぞれ得られた受光量減少分を積算する第4の工程と、前記受光量減少分の積算値を所定のしきい値と比較して、前記積算値が前記しきい値を超えたときに、前記光ビームの受光量の波形の中に前記基準サイズを超える大きさの逆さ山形プロファイルが含まれていると判定する第5の工程とを含む。According to a third aspect of the present invention, there is provided a backside foreign object detection method in which a substrate to be processed is passed through a floating area of a floating stage provided with a large number of jet outlets and a large number of suction ports at a predetermined flying height. In a coating apparatus that forms a coating film of the processing liquid by supplying a processing liquid onto the substrate that is transported and passes below a slit nozzle that is disposed above the floating region, and adheres to the back surface of the substrate. A foreign matter detection method for detecting a foreign matter that is harmful to the slit nozzle at a position upstream of the slit nozzle in the substrate transport direction, facing both sides of the levitation stage. Between the light projecting unit and the light receiving unit arranged in a horizontal direction, the light beam horizontally passing across the upper surface of the substrate passing through the floating region is transmitted and received, and the amount of light beam received from the light receiving unit is Receiving A first step of acquiring a quantity signal, and a profile of the light receiving quantity of the light beam, which is an inverted mountain shape on the time axis, based on the received light quantity signal, and monitoring the received light quantity waveform of the light beam A second step of generating an alarm signal indicating that the harmful backside foreign matter has been detected when an inverted chevron profile having a size exceeding a predetermined reference size is detected. Is a third step of obtaining a decrease in the received light amount of the light beam with respect to a predetermined received light amount reference value at a plurality of extraction points set at predetermined intervals on the time axis, and from the plurality of extracted points A fourth step of integrating the obtained received light amount decrease, and comparing the integrated value of the received light amount decrease with a predetermined threshold, and when the integrated value exceeds the threshold, The reference size in the waveform of the received light amount of the light beam Than including the size of the fifth step determines that contains inverted chevron profile.
本発明の第3の観点における裏面異物検出装置は、多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板に向けて処理液を供給して、前記基板上に前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出装置であって、前記浮上ステージを挟んでその両側に対向して配置される投光部および受光部を有し、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを前記投光部と前記受光部との間で送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を出力する光センサと、前記光センサより出力される前記受光量信号に基づいて、前記光ビームの受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビームの受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害な裏面異物を検出した旨の警報信号を発生する信号処理部とを有し、前記信号処理部は、時間軸上に所定の間隔を置いて設定される複数の抽出点で所定の受光量基準値に対する前記光ビームの受光量の減少分を求める第1の演算部と、前記複数の抽出点よりそれぞれ得られた受光量減少分を積算する第2の演算部と、前記受光量減少分の積算値を所定のしきい値と比較して、前記積算値が前記しきい値を超えたときに、前記光ビームの受光量の波形の中に前記基準サイズを超える大きさの逆さ山形プロファイルが含まれていると判定する第3の演算部とを含む。The backside foreign object detection device according to the third aspect of the present invention is configured to pass the substrate to be processed so as to pass through a floating area of a floating stage provided with a large number of jet ports and a large number of suction ports in a mixed manner. In a coating apparatus for transporting and supplying a processing liquid toward the substrate passing under a slit nozzle disposed above the floating region, and forming a coating film of the processing liquid on the substrate, A backside foreign matter detection device for detecting a backside foreign matter adhering to the backside of a substrate and harmful to the slit nozzle at a position upstream of the slit nozzle in the substrate transport direction, sandwiching the floating stage And having a light projecting portion and a light receiving portion arranged to face both sides of the light projecting portion and the light receiving portion. Sent and received between The light sensor outputs a received light amount signal representing the received light amount of the light beam from the light receiving unit, and the received light amount waveform of the light beam is a time axis based on the received light amount signal output from the light sensor. The above-mentioned profile having an inverted chevron is monitored, and when the inverted chevron profile with a size exceeding a predetermined reference size is detected in the waveform of the received light amount of the light beam, the harmful backside foreign matter is detected. A signal processing unit that generates an alarm signal, and the signal processing unit receives the light beam with respect to a predetermined received light amount reference value at a plurality of extraction points set at predetermined intervals on a time axis. A first calculation unit for obtaining a decrease in the amount of light; a second calculation unit for integrating the decrease in the amount of received light obtained from each of the plurality of extraction points; and an integrated value for the decrease in the amount of received light. Compared to the value There when it exceeds the threshold value, and a said light beam 3 determines that the magnitude of inverted chevron profile of exceeding the reference size in a received light amount of the waveform is included in the calculation unit.
上記第3の観点における裏面異物検出方法または裏面異物検出装置においては、光センサより得られる光ビームの受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、光ビームの受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、有害な裏面異物を検出した旨の警報信号を発生する。具体的には、時間軸上に所定の間隔を置いて設定される複数の抽出点で所定の受光量基準値に対する光ビームの受光量の減少分を求め、それら複数の抽出点よりそれぞれ得られた受光量減少分を積算する。そして、受光量減少分の積算値を所定のしきい値と比較して、積算値がしきい値を超えたときに、光ビームの受光量の波形の中に基準サイズを超える大きさの逆さ山形プロファイルが含まれていると判定する。このことにより、受光量信号に含まれるノイズ成分の影響を受けずに、当該逆さ山形プロファイルの元になっている裏面異物がスリットノズルに対して有害な(つまり、スリットノズルに基板の上面を擦らせて傷を付けるおそれのある)異物であるか否かを的確に判別することができる。In the backside foreign object detection method or the backside foreign object detection device according to the third aspect, the light reception amount of the light beam is targeted for monitoring a profile in which the waveform of the light reception amount of the light beam obtained from the optical sensor is inverted on the time axis. When an inverted chevron profile with a size exceeding a predetermined reference size is detected in the waveform, an alarm signal indicating that a harmful backside foreign object has been detected is generated. Specifically, a decrease in the amount of received light beam with respect to a predetermined light reception amount reference value is obtained at a plurality of extraction points set at predetermined intervals on the time axis, and obtained from each of the plurality of extraction points. Accumulate the decrease in received light amount. Then, the integrated value for the decrease in received light amount is compared with a predetermined threshold value, and when the integrated value exceeds the threshold value, the inverse of the size exceeding the reference size in the received light amount waveform of the light beam. It is determined that the Yamagata profile is included. As a result, the backside foreign material that is the basis of the inverted chevron profile is harmful to the slit nozzle without being affected by the noise component included in the received light amount signal (that is, the upper surface of the substrate is rubbed against the slit nozzle). It is possible to accurately determine whether or not the foreign object is likely to be damaged.
本発明の第4の観点における裏面異物検出方法は、多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板上に処理液を供給して前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出方法であって、前記浮上ステージを挟んでその両側に対向して配置される投光部と受光部との間で、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を取得する第1の工程と、前記受光量信号に基づいて、前記光ビームの受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビームの受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害な裏面異物を検出した旨の警報信号を発生する第2の工程とを有し、前記第2の工程において、時間軸上で前記光ビームの受光量の波形に前記基準サイズまたはそれより一回り小さなサイズを有する逆さ山形プロファイルのモデルパターンを定規として当てて、前記モデルパターン内で時間軸上に所定の間隔を置いて設定される複数の比較箇所で前記モデルパターンを上回る大きさの逆さ山形プロファイルが見つかれば、それは前記基準サイズを超える大きさの逆さ山形プロファイルであると判定する。According to a fourth aspect of the present invention, there is provided a backside foreign object detection method in which a substrate to be processed is passed through a floating area of a floating stage provided with a large number of jet outlets and a large number of suction ports in a mixed manner. In a coating apparatus that forms a coating film of the processing liquid by supplying a processing liquid onto the substrate that is transported and passes below a slit nozzle that is disposed above the floating region, and adheres to the back surface of the substrate. A foreign matter detection method for detecting a foreign matter that is harmful to the slit nozzle at a position upstream of the slit nozzle in the substrate transport direction, facing both sides of the levitation stage. Between the light projecting unit and the light receiving unit arranged in a horizontal direction, the light beam horizontally passing across the upper surface of the substrate passing through the floating region is transmitted and received, and the amount of light beam received from the light receiving unit is Receiving A first step of acquiring a quantity signal, and a profile of the light receiving quantity of the light beam, which is an inverted mountain shape on the time axis, based on the received light quantity signal, and monitoring the received light quantity waveform of the light beam A second step of generating an alarm signal indicating that the harmful backside foreign matter has been detected when an inverted chevron profile having a size exceeding a predetermined reference size is detected. The model pattern of the inverted chevron profile having the reference size or a size slightly smaller than the reference size is applied as a ruler to the received light amount waveform of the light beam on the time axis, and a predetermined pattern on the time axis within the model pattern. If an inverted chevron profile with a size exceeding the model pattern is found at a plurality of comparative points set at intervals, it is an inverse of the size exceeding the reference size. Determined to be in the form profile.
本発明の第4の観点における裏面異物検出装置は、多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板に向けて処理液を供給して、前記基板上に前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出装置であって、前記浮上ステージを挟んでその両側に対向して配置される投光部および受光部を有し、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを前記投光部と前記受光部との間で送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を出力する光センサと、前記光センサより出力される前記受光量信号に基づいて、前記光ビームの受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビームの受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害な裏面異物を検出した旨の警報信号を発生する信号処理部とを有し、前記信号処理部は、時間軸上で前記光ビームの受光量の波形に前記基準サイズまたはそれより一回り小さなサイズを有する逆さ山形プロファイルのモデルパターンを定規として当てて、前記モデルパターン内で時間軸上に所定の間隔を置いて設定される複数の比較箇所で前記モデルパターンを上回る大きさの逆さ山形プロファイルが見つかれば、それは前記基準サイズを超える大きさの逆さ山形プロファイルであると判定する演算部を有する。According to a fourth aspect of the present invention, there is provided a backside foreign object detection device that allows a substrate to be processed to pass through a floating region of a floating stage provided with a mixture of a large number of ejection ports and a large number of suction ports at a predetermined flying height. In a coating apparatus for transporting and supplying a processing liquid toward the substrate passing under a slit nozzle disposed above the floating region, and forming a coating film of the processing liquid on the substrate, A backside foreign matter detection device for detecting a backside foreign matter adhering to the backside of a substrate and harmful to the slit nozzle at a position upstream of the slit nozzle in the substrate transport direction, sandwiching the floating stage And having a light projecting portion and a light receiving portion arranged to face both sides of the light projecting portion and the light receiving portion. Sent and received between The light sensor outputs a received light amount signal representing the received light amount of the light beam from the light receiving unit, and the received light amount waveform of the light beam is a time axis based on the received light amount signal output from the light sensor. The above-mentioned profile having an inverted chevron is monitored, and when the inverted chevron profile with a size exceeding a predetermined reference size is detected in the waveform of the received light amount of the light beam, the harmful backside foreign matter is detected. A signal processing unit that generates an alarm signal of the above-mentioned, and the signal processing unit has a model of an inverted chevron profile having a size of the reference size or one size smaller than the reference size in the waveform of the amount of received light beam on the time axis By applying a pattern as a ruler, upside-down mountains with a size larger than the model pattern at a plurality of comparison points set at predetermined intervals on the time axis in the model pattern If you find the profile, which has a determining operation unit to be inverted chevron profile of magnitude greater than the reference size.
上記第4の観点における裏面異物検出方法または裏面異物検出装置においては、光センサより得られる光ビームの受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、光ビームの受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、有害な裏面異物を検出した旨の警報信号を発生する。具体的には、時間軸上で光ビームの受光量の波形に基準サイズまたはそれより一回り小さなサイズを有する逆さ山形プロファイルのモデルパターンを定規として当てて、モデルパターン内で時間軸上に所定の間隔を置いて設定される複数の比較箇所でモデルパターンを上回る大きさの逆さ山形プロファイルが見つかれば、それは基準サイズを超える大きさの逆さ山形プロファイルであると判定する。このことにより、受光量信号に含まれるノイズ成分の影響を受けずに、当該逆さ山形プロファイルの元になっている裏面異物がスリットノズルに対して有害な(つまり、スリットノズルに基板の上面を擦らせて傷を付けるおそれのある)異物であるか否かを的確に判別することができる。In the backside foreign matter detection method or the backside foreign matter detection device according to the fourth aspect, a profile in which the waveform of the light reception amount of the light beam obtained from the optical sensor is inverted upside down on the time axis is monitored, and the light reception amount of the light beam When an inverted chevron profile with a size exceeding a predetermined reference size is detected in the waveform, an alarm signal indicating that a harmful backside foreign object has been detected is generated. Specifically, a model pattern of an inverted chevron profile having a reference size or a size slightly smaller than the reference size is applied as a ruler to the received light amount waveform on the time axis, and a predetermined pattern on the time axis within the model pattern. If an inverted chevron profile having a size exceeding the model pattern is found at a plurality of comparison points set at intervals, it is determined that the inverted chevron profile has a size exceeding the reference size. As a result, the backside foreign material that is the basis of the inverted chevron profile is harmful to the slit nozzle without being affected by the noise component included in the received light amount signal (that is, the upper surface of the substrate is rubbed against the slit nozzle). It is possible to accurately determine whether or not the foreign object is likely to be damaged.

本発明の塗布装置は、多数の噴出口と多数の吸引口とが混在して設けられた第1の浮上領域を有する浮上ステージと、前記浮上ステージ上で空中に浮く前記基板を保持して前記第1の浮上領域を通過するように搬送する搬送機構と、前記第1の浮上領域の上方に配置されるスリットノズルを有し、前記第1の浮上領域を通過する前記基板上に前記スリットノズルより処理液を供給する処理液供給部と、基板搬送方向において前記スリットノズルより上流側の位置で、前記第1の浮上領域を通過する前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を検出するための本発明の裏面異物検出装置とを有する。   The coating apparatus according to the present invention includes a levitation stage having a first levitation region provided with a mixture of a large number of ejection openings and a large number of suction ports, and the substrate floating in the air on the levitation stage. The slit nozzle is provided on the substrate passing through the first floating region, and having a transport mechanism for transporting the first floating region and a slit nozzle disposed above the first floating region. A treatment liquid supply unit for supplying a treatment liquid, and a substrate upstream of the slit nozzle in the substrate transport direction, attached to the back surface of the substrate passing through the first floating region, and It has the backside foreign matter detection device of the present invention for detecting harmful backside foreign matter.

本発明の裏面異物検出方法または裏面異物検出装置によれば、上記のような構成および作用により、浮上方式のスピンレス塗布法においてスリットノズルに基板の上面を擦らせて傷を付けるおそれのある有害な裏面異物を精度よく確実に検出することができる。   According to the backside foreign matter detection method or the backside foreign matter detection device of the present invention, the above-described configuration and operation are harmful because there is a risk of scratching the slit nozzle by rubbing the top surface of the substrate in the spin-less spin coating method. It is possible to accurately detect the backside foreign matter with high accuracy.

また、本発明の塗布装置によれば、本発明の裏面検出装置を備えることにより、スリットノズルの損傷を確実に防止することができるだけでなく、裏面異物に起因した塗布処理動作の不必要な中断を回避できるので、メンテナンスコストの低減と塗布処理効率の向上をはかることができる。   In addition, according to the coating apparatus of the present invention, by providing the back surface detection apparatus of the present invention, it is possible not only to reliably prevent the slit nozzle from being damaged, but also unnecessary interruption of the coating processing operation caused by the back surface foreign matter. Therefore, the maintenance cost can be reduced and the coating processing efficiency can be improved.

本発明の裏面異物検出方法または裏面異物検出装置の適用可能なレジスト塗布装置の主要な構成を示す略平面図である。It is a schematic plan view showing a main configuration of a resist coating apparatus to which the backside foreign matter detection method or backside foreign matter detection device of the present invention can be applied. 上記レジスト塗布装置における塗布処理動作を模式的に示す正面図である。It is a front view which shows typically the coating treatment operation | movement in the said resist coating device. 上記レジスト塗布装置において裏面異物が問題になるときの葉面を説明するための図である。It is a figure for demonstrating the leaf surface when a back surface foreign material becomes a problem in the said resist coating device. 上記レジスト塗布装置において裏面異物が問題になるときの葉面を説明するための図である。It is a figure for demonstrating the leaf surface when a back surface foreign material becomes a problem in the said resist coating device. 上記レジスト塗布装置における裏面異物検出装置の作用を説明するための図である。It is a figure for demonstrating the effect | action of the back surface foreign material detection apparatus in the said resist coating apparatus. 実施形態における裏面異物検出装置の構成を示すブロック図である。It is a block diagram which shows the structure of the back surface foreign material detection apparatus in embodiment. 実施形態の裏面異物検出装置における光センサの配置構成を示す側面図である。It is a side view which shows the arrangement configuration of the optical sensor in the back surface foreign material detection apparatus of embodiment. 裏面異物による基板の盛り上がりと上記光センサの作用を示す部分拡大正面図である。It is a partial enlarged front view which shows the rise of the board | substrate by a back surface foreign material, and the effect | action of the said optical sensor. 上記光センサにおいて得られる光ビーム受光量の波形を示す図である。It is a figure which shows the waveform of the light beam received light quantity obtained in the said optical sensor. 上記裏面異物検出装置におけるA/D変換器の作用を示す図である。It is a figure which shows the effect | action of the A / D converter in the said back surface foreign material detection apparatus. 上記裏面異物検出装置の信号処理部における演算部の構成を示すブロック図である。It is a block diagram which shows the structure of the calculating part in the signal processing part of the said back surface foreign material detection apparatus. 上記信号処理部の演算部に含まれるサンプル値抽出部の作用を説明するための図である。It is a figure for demonstrating the effect | action of the sample value extraction part contained in the calculating part of the said signal processing part. 上記信号処理部の演算部に含まれる減少分演算部および積算部の作用を説明するための図である。It is a figure for demonstrating the effect | action of the reduction | decrease calculating part contained in the calculating part of the said signal processing part, and an integrating | accumulating part. 上記信号処理部の作用(適用例)を示す図である。It is a figure which shows the effect | action (application example) of the said signal processing part. 一変形例における信号処理部の構成を示すブロック図である。It is a block diagram which shows the structure of the signal processing part in one modification. 上記変形例による信号処理部の作用(適用例)を示す図である。It is a figure which shows the effect | action (application example) of the signal processing part by the said modification.

以下、添付図を参照して、本発明の好適な実施形態を説明する。   Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

図1に、本発明の裏面異物検出方法または裏面異物検出装置を適用できるレジスト塗布装置の主要な構成を示す。   FIG. 1 shows the main configuration of a resist coating apparatus to which the backside foreign matter detection method or backside foreign matter detection apparatus of the present invention can be applied.

このレジスト塗布装置は、浮上方式のスピンレス塗布法を採用しており、図1に示すように、被処理基板たとえばFPD用のガラス基板Gを気体の圧力によって空中に浮かす浮上ステージ10と、この浮上ステージ10上で空中に浮いている基板Gを浮上ステージ長手方向(X方向)に搬送する搬送機構12と、浮上ステージ10上を搬送される基板Gの上面にレジスト液を供給するスリットノズル14とを備えている。   This resist coating apparatus employs a levitation spinless coating method, and as shown in FIG. 1, a levitation stage 10 that floats a substrate to be processed, such as a glass substrate G for FPD, in the air by gas pressure, and the levitation A transport mechanism 12 for transporting the substrate G floating in the air on the stage 10 in the longitudinal direction (X direction) of the floating stage; a slit nozzle 14 for supplying a resist solution to the upper surface of the substrate G transported on the floating stage 10; It has.

浮上ステージ10の上面は、基板搬送方向(X方向)に沿って3つの領域つまり搬入領域MIN、塗布領域MCOTおよび搬出領域MOUTに区画されている。このうち、搬入領域MINおよび搬出領域MOUTには、噴出口16のみが所定の密度で多数設けられており、塗布領域MCOTには噴出口16と吸引口18とが所定の密度で多数混在して設けられている。 The upper surface of the levitation stage 10 is divided into three regions, that is, a carry-in region M IN , a coating region M COT, and a carry-out region M OUT along the substrate transfer direction (X direction). Among these, only a large number of jet nozzles 16 are provided in the carry-in area M IN and the carry-out area M OUT with a predetermined density, and many jet nozzles 16 and suction ports 18 are provided with a predetermined density in the coating area M COT. It is provided in a mixed manner.

搬入領域MINには、塗布処理前の基板Gを前段の外部装置からソータ機構(図示せず)により平流し搬送で、あるいは搬送ロボット(図示せず)からの受け渡しで搬入するための基板搬入部(図示せず)が設けられている。搬出領域MOUTには、塗布処理の済んだ基板Gを後段の外部装置へソータ機構(図示せず)により平流しの搬送で、あるいは搬送ロボット(図示せず)への受け渡しで搬出するための基板搬出部(図示せず)が設けられている。 Into the carry-in area MIN , a substrate G for carrying the substrate G before the coating treatment from the external device in the previous stage by a flat flow by a sorter mechanism (not shown) or by delivery from a transfer robot (not shown) A portion (not shown) is provided. In the carry-out area M OUT , the substrate G that has been subjected to the coating process is carried out to a subsequent external device by a flat flow by a sorter mechanism (not shown) or by delivery to a transfer robot (not shown). A substrate carry-out unit (not shown) is provided.

塗布領域MCOTには、ステージ上方に、スリットノズル14が昇降移動可能に設けられるとともに、塗布処理の合間にスリットノズル14をリフレッシュするノズルリフレッシュ部24が基板搬送方向(X方向)と平行に水平移動可能に設けられている。 In the coating region M COT , the slit nozzle 14 is provided above the stage so as to be movable up and down, and a nozzle refresh unit 24 that refreshes the slit nozzle 14 between coating processes is parallel to the substrate transport direction (X direction). It is provided to be movable.

搬送機構12は、図1に示すように、浮上ステージ10を挟んでX方向に延びる一対のガイドレール26A,26Bと、これらのガイドレール26A,26Bに沿って往復移動可能な一対のスライダ28と、浮上ステージ10上で基板Gの両側端部を着脱可能に保持するようにスライダ28に設けられた吸着パッド等の基板保持部材(図示せず)とを備えており、直進移動機構(図示せず)によりスライダ28を基板搬送方向(X方向)に移動させることによって、浮上ステージ10上で搬入領域MINから塗布領域MCOTを通って搬出領域MOUTまで基板Gの浮上搬送を行うように構成されている。 As shown in FIG. 1, the transport mechanism 12 includes a pair of guide rails 26 </ b> A and 26 </ b> B that extend in the X direction with the levitation stage 10 interposed therebetween, and a pair of sliders 28 that can reciprocate along the guide rails 26 </ b> A and 26 </ b> B. And a substrate holding member (not shown) such as a suction pad provided on the slider 28 so as to detachably hold both side ends of the substrate G on the floating stage 10, and a linear movement mechanism (not shown). The slider G is moved in the substrate transport direction (X direction) to float and transport the substrate G from the loading area M IN through the coating area M COT to the unloading area M OUT on the floating stage 10. It is configured.

スリットノズル14は、浮上ステージ10の上方を基板搬送方向と直交する水平方向(Y方向)に横断し、その直下を通過する基板Gの上面(被処理面)に対してスリット状の吐出口よりレジスト液Rを帯状に吐出するようになっている。また、スリットノズル14は、浮上ステージ10をスリットノズル14と平行に(Y方向に)跨いで設置される門形フレーム30に取り付けられるたとえばボールネジ機構やガイド部材等を含むノズル昇降機構36により、このノズル14を支持するノズル支持部材38と一体に鉛直方向(Z方向)に移動(昇降)可能に構成されている。また、スリットノズル14は、レジスト液容器や送液ポンプ等からなるレジスト供給機構40(図2、図5)にレジスト供給管42を介して接続されている。   The slit nozzle 14 traverses the top of the levitation stage 10 in the horizontal direction (Y direction) orthogonal to the substrate transport direction, and passes from directly below the upper surface (processing surface) of the substrate G from a slit-like discharge port. The resist solution R is discharged in a strip shape. Further, the slit nozzle 14 is provided by a nozzle elevating mechanism 36 including, for example, a ball screw mechanism or a guide member, which is attached to a portal frame 30 installed across the floating stage 10 in parallel (in the Y direction) with the slit nozzle 14. The nozzle support member 38 that supports the nozzle 14 is configured to be movable (lifted / lowered) in the vertical direction (Z direction) integrally. The slit nozzle 14 is connected via a resist supply pipe 42 to a resist supply mechanism 40 (FIGS. 2 and 5) including a resist solution container and a liquid feed pump.

ここで、このレジスト塗布装置におけるレジスト塗布動作を説明する。先ず、前段の基板処理装置(図示せず)より基板Gがソータ機構または搬送ロボットを介して浮上ステージ10の搬入領域MINに搬入され、そこで待機していたスライダ28が基板Gを保持して受け取る。浮上ステージ10上で基板Gは噴出孔16より噴射されるエアの圧力(揚力)によって空中に浮く。 Here, the resist coating operation in this resist coating apparatus will be described. First, the substrate G from the front of the substrate processing apparatus (not shown) is loaded into loading area M IN of floating stage 10 through the sorter mechanism or transport robot, where a slider 28 which has been waiting while holding the substrate G receive. On the levitation stage 10, the substrate G floats in the air by the pressure (lift) of air ejected from the ejection holes 16.

こうして基板Gが浮上ステージ10上で水平に浮上したまま搬送機構12により基板搬送方向(X方向)に搬送され、ステージ中央部の塗布領域MCOTを通過する際に、スリットノズル14が基板Gに向けてレジスト液Rを所定の流量で帯状に吐出することにより、図2に示すように基板Gの前端側から後端側へ向かって膜厚の均一なレジスト液の塗布膜RMが形成されていく。 In this way, the substrate G is transported in the substrate transport direction (X direction) by the transport mechanism 12 while horizontally floating on the floating stage 10, and the slit nozzle 14 is applied to the substrate G when passing through the coating region MCOT at the center of the stage. By discharging the resist solution R in a strip shape at a predetermined flow rate, a resist film coating RM having a uniform film thickness is formed from the front end side to the rear end side of the substrate G as shown in FIG. Go.

基板Gの後端がスリットノズル14の下を通過すると、基板一面にレジスト塗布膜RMが形成される。次いで、基板Gは、その後もスライダ28により浮上ステージ10上で浮上搬送され、浮上ステージ10の後端に設定された搬出領域MOUTよりソータ機構または搬送ロボットを介して後段のユニット(図示せず)へ送られる。 When the rear end of the substrate G passes under the slit nozzle 14, a resist coating film RM is formed on the entire surface of the substrate. Subsequently, the substrate G is then levitated and conveyed on the levitating stage 10 by the slider 28, and a rear stage unit (not shown) from the unloading area M OUT set at the rear end of the levitating stage 10 via a sorter mechanism or a conveying robot. ).

図2に示すように、浮上ステージ10の搬入領域MINおよび搬出領域MOUTにおける搬入用および搬出用の浮上高HIN,HOUTは、特に高い精度を必要とせず、たとえば250〜350μmの範囲内に保たれればよい。 As shown in FIG. 2, the flying heights H IN and H OUT for loading and unloading in the carry-in area M IN and the carry-out area M OUT of the levitation stage 10 do not require particularly high accuracy, for example, in the range of 250 to 350 μm. It only has to be kept inside.

これに対して、浮上ステージ10の塗布領域MCOTは、基板Gがここを通過する際に上方のスリットノズル14からレジスト液Rの供給を受ける場所である。塗布領域MCOTにおける浮上高HCOTは、スリットノズル14の下端(吐出口)と基板上面(被処理面)との間の塗布ギャップK(たとえば100μm)を規定する。 On the other hand, the coating area M COT of the levitation stage 10 is a place where the resist solution R is supplied from the upper slit nozzle 14 when the substrate G passes therethrough. Flying height H COT in the coating region M COT defines a coating gap K between the lower end of the slit nozzle 14 (discharge port) and the substrate upper surface (surface to be processed) (e.g. 100 [mu] m).

この塗布ギャップKはレジスト塗布膜RMの膜厚やレジスト消費量を左右する重要なパラメータであり、高い精度で一定に維持される必要がある。このことから、塗布領域MCOTのステージ上面には、基板Gを所望の浮上高HCOTで浮かせるために高圧または正圧の圧縮空気を噴き出す噴出口16と負圧で空気を吸い込む吸引口18とを混在させて設けている(図1)。そして、基板Gの塗布領域MCOT内を通過している部分に対して、噴出口16から高圧空気による垂直上向きの力を加えると同時に吸引口18より負圧吸引力による垂直下向きの力を加えて、相対抗する双方向の力のバランスを制御することで、塗布領域MCOTにおける浮上高HCOTを高い精度で設定値(たとえば40μm)付近に維持するようにしている。 The coating gap K is an important parameter that affects the film thickness of the resist coating film RM and the resist consumption, and needs to be kept constant with high accuracy. Therefore, on the upper surface of the stage in the coating region M COT , there are a jet port 16 for jetting high-pressure or positive-pressure compressed air and a suction port 18 for sucking air with negative pressure in order to float the substrate G at a desired flying height H COT. Are mixed (FIG. 1). Then, a vertical upward force due to high-pressure air is applied from the jet port 16 to the portion passing through the coating region MCOT of the substrate G, and simultaneously a vertical downward force due to a negative pressure suction force is applied from the suction port 18. Thus, by controlling the balance of the opposing forces, the flying height H COT in the coating region M COT is maintained near the set value (for example, 40 μm) with high accuracy.

なお、基板搬送方向(X方向)における塗布領域MCOTのサイズは、スリットノズル14の直下に上記のような狭い塗布ギャップKを安定に形成できるほどの余裕があればよく、通常は基板Gのサイズよりも小さくてよく、たとえば1/3〜1/4程度でよい。 Note that the size of the coating region M COT in the substrate transport direction (X direction) is sufficient if it has a margin enough to stably form the narrow coating gap K as described above immediately below the slit nozzle 14. The size may be smaller than the size, for example, about 1/3 to 1/4.

ここで、図2〜図4につき、このレジスト塗布装置において、基板Gの裏面に付着している異物が問題になる場面を説明する。   Here, with reference to FIGS. 2 to 4, a description will be given of a scene in which foreign matter adhering to the back surface of the substrate G becomes a problem in this resist coating apparatus.

例として、浮上ステージ10に搬入された基板Gの裏面に異物Qが付着していて、その異物Qの高さ方向のサイズHQが搬入領域MINの浮上高HIN(250〜350μm)よりも小さくて塗布領域MCOTの浮上高HCOT(40μm)よりも大きい場合を考える。 As an example, though the foreign matter Q is attached to the rear surface of the loaded wafer G in floating stage 10, from the flying height H IN size H Q in the height direction of the foreign matter Q is carried region M IN (250~350μm) Is smaller than the flying height H COT (40 μm) of the coating area M COT .

図2に示すように、この裏面異物Qが搬入領域MINに在る間は、基板Gは異物Qから何の影響も受けずにそのまま浮上搬送される。しかし、図3に示すように、この裏面異物Qは塗布領域MCOTに入ると基板Gの裏面と浮上ステージ10の上面との間に挟まり、それによって基板Gの上面が裏面異物Qの付着している箇所GQで盛り上がる。この盛り上がりGQの大きさ(上昇分)は、裏面異物Qの高さ方向のサイズHQと浮上高HCOT(40μm)との差分(HQ−HCOT)に相当する。したがって、この差分(HQ−HCOT)が塗布ギャップK(100μm)以上の大きさである場合は、つまり裏面異物Qの高さ方向のサイズHQが140μm以上である場合は、裏面異物Qがスリットノズル14の直下を通過する際に、その上方で基板Gの盛り上がり部分GQがスリットノズル14の吐出口を擦ることになる。そうなると、スリットノズル14の吐出口が損傷して、スリットノズル14は相当な確率で使い物にならなくなる。 As shown in FIG. 2, while the rear surface foreign matter Q is in carrying region M IN, the substrate G is directly levitation transportation without receiving any influence from the foreign matter Q. However, as shown in FIG. 3, when this back surface foreign substance Q enters the coating region M COT , it is sandwiched between the back surface of the substrate G and the top surface of the levitation stage 10, whereby the top surface of the substrate G adheres to the back surface foreign material Q. It rises in and are point G Q. The size of the rise G Q (the amount of increase) corresponds to the difference (H Q −H COT ) between the height direction size H Q of the backside foreign material Q and the flying height H COT (40 μm). Accordingly, when the difference (H Q −H COT ) is greater than or equal to the coating gap K (100 μm), that is, when the size H Q in the height direction of the back surface foreign material Q is 140 μm or more, the back surface foreign material Q Swells immediately above the slit nozzle 14, the raised portion G Q of the substrate G rubs the discharge port of the slit nozzle 14 above it. As a result, the discharge port of the slit nozzle 14 is damaged, and the slit nozzle 14 becomes unusable with a considerable probability.

この実施形態では、図5に示すように、本発明の裏面異物検出装置50を備えることより、後述するように、上記のような有害な(つまり、スリットノズル14に基板Gの上面を擦らせて傷を付けるおそれのある)裏面異物Qをスリットノズル14よりも基板搬送方向(X方向)の上流側で確実に検出することが可能である。そして、裏面異物検出装置50がそのような有害裏面異物Qを検出したときに発生する警報信号WSに応答して、主制御部52がノズル昇降機構36を通じてスリットノズル14を即時に上昇移動させることにより、スリットノズル14は基板Gの盛り上がり部分GQをかわす(摺接または衝突を避ける)ことができ、スリットノズル14の損傷が防止される。 In this embodiment, as shown in FIG. 5, by providing the back surface foreign object detection device 50 of the present invention, as described later, the above harmful (that is, the slit nozzle 14 rubs the upper surface of the substrate G). It is possible to reliably detect the backside foreign material Q (which may cause scratches) upstream of the slit nozzle 14 in the substrate transport direction (X direction). Then, in response to an alarm signal WS generated when the backside foreign object detection device 50 detects such a harmful backside foreign substance Q, the main control unit 52 immediately moves the slit nozzle 14 up and down through the nozzle lifting mechanism 36. Accordingly, the slit nozzle 14 dodge raised portion G Q of the substrate G (avoid sliding or collision) that can damage the slit nozzle 14 is prevented.

なお、上記警報信号WSに応答して、主制御部52が、レジスト供給機構40を制御してスリットノズル14のレジスト吐出動作を停止させるのが好ましく、さらには搬送機構12を制御して基板Gの搬送をいったん停止させてもよい。   In response to the alarm signal WS, the main controller 52 preferably controls the resist supply mechanism 40 to stop the resist discharge operation of the slit nozzle 14, and further controls the transport mechanism 12 to control the substrate G. You may stop conveyance of once.

また、この実施形態では、後述するように、有害裏面異物Qよりも高さ方向サイズの小さな実質的に無害の(つまり、スリットノズル14に基板Gの上面を擦らせるおそれのない)裏面異物qに対しては、裏面異物検出装置50が上記警報信号WSを発生しないようになっている。これによって、実行中の塗布処理動作を不必要に中断する事態を回避し、裏面異物に起因する装置稼働率の低下を極力避けるようにしている。   Further, in this embodiment, as will be described later, the backside foreign material q having a smaller size in the height direction than the harmful backside foreign material Q (that is, no risk of rubbing the upper surface of the substrate G against the slit nozzle 14). In contrast, the backside foreign object detection device 50 does not generate the alarm signal WS. As a result, a situation in which the coating treatment operation being performed is interrupted unnecessarily is avoided, and a reduction in the apparatus operating rate due to the foreign matter on the back surface is avoided as much as possible.

以下、図5〜図16につき、本発明の一実施形態における裏面異物検出装置50の構成および作用を詳細に説明する。   Hereinafter, the configuration and operation of the backside foreign object detection device 50 according to an embodiment of the present invention will be described in detail with reference to FIGS.

図5および図6に示すように、この実施形態における裏面異物検出装置50は、基板搬送方向(X方向)においてスリットノズル14の上流側に配置される光センサ54と、この光センサ54より出力される受光量信号ASに基づいて、基板Gに付着している有害裏面異物Qを所定の信号処理によって検出する信号処理部56とを有している。   As shown in FIGS. 5 and 6, the back surface foreign object detection device 50 in this embodiment includes an optical sensor 54 disposed on the upstream side of the slit nozzle 14 in the substrate transport direction (X direction), and an output from the optical sensor 54. And a signal processing unit 56 for detecting harmful backside foreign matter Q adhering to the substrate G by predetermined signal processing based on the received light amount signal AS.

光センサ54は、投光部58および受光部60を有する。図5および図7に示すように、投光部58および受光部60は、スリットノズル14から基板搬送方向(X方向)の上流側に適当な距離(たとえば60〜80mm)を隔てて浮上ステージ10(塗布領域MCOT)の両側に対向して配置される。 The optical sensor 54 includes a light projecting unit 58 and a light receiving unit 60. As shown in FIGS. 5 and 7, the light projecting unit 58 and the light receiving unit 60 are separated from the slit nozzle 14 by an appropriate distance (for example, 60 to 80 mm) upstream in the substrate transport direction (X direction). They are arranged opposite to both sides of (application region M COT ).

投光部58は、1個のLD(半導体レーザ)でもよいが、好ましくは多数のLDを縦横マトリクス状に配置してなる2次元LDアレイからなり、発光駆動回路(図示せず)より駆動電流の供給を受けて発光し、たとえば縦1mm・横5mmのビーム断面サイズを有する光ビームLBを出射する。この際、投光部58より出射された光ビームLBの下端部が基板Gの一側面で進路を断たれ、基板Gの上面よりも高い空間を水平に伝播するビーム部分だけが受光部60の受光面に到達するように、ビーム光路の高さ位置を設定または調整してよい。   The light projecting unit 58 may be a single LD (semiconductor laser), but is preferably a two-dimensional LD array in which a large number of LDs are arranged in a vertical and horizontal matrix, and a drive current from a light emission drive circuit (not shown). For example, and emits a light beam LB having a beam cross-sectional size of 1 mm in length and 5 mm in width. At this time, the lower end portion of the light beam LB emitted from the light projecting unit 58 is cut off on one side surface of the substrate G, and only the beam portion that propagates horizontally in a space higher than the upper surface of the substrate G is the light receiving unit 60. The height position of the beam optical path may be set or adjusted so as to reach the light receiving surface.

受光部60は、一定サイズ(たとえば縦1mm・横5mm)の全受光エリアの中に多数の受光セルを縦横マトリクス状に配置してなる2次元CCD(Charge-Coupled Device)からなり、一定サイクルの周期で、各々の受光セル毎に受光した光を光電変換してその受光量AEを表す信号電荷またはアナログの受光量信号ASを生成し、所定の転送方法で受光量信号ASを時系列でシリアルに出力するようになっている。   The light receiving unit 60 is composed of a two-dimensional CCD (Charge-Coupled Device) in which a large number of light receiving cells are arranged in a vertical and horizontal matrix within a total light receiving area of a certain size (for example, 1 mm in length and 5 mm in width). In a cycle, the light received in each light receiving cell is photoelectrically converted to generate a signal charge or analog light reception signal AS representing the light reception amount AE, and the light reception signal AS is serialized in time series by a predetermined transfer method. To output.

図8に示すように、有害裏面異物Q(または無害裏面異物q)が光センサ54を通過する時は、基板Gの盛り上がり部GQ(Gq)によって光ビームLBの遮光分が増大し、つまり受光部60における光ビームLBの受光量が減少し、受光量AEの波形には図9に示すように逆さ山状(すり鉢状)のプロファイルAEQ(AEq)が現れる。 As shown in FIG. 8, when the harmful backside foreign matter Q (or harmless backside foreign matter q) passes through the optical sensor 54, the light shielding portion of the light beam LB is increased by the raised portion GQ ( Gq ) of the substrate G, That is, the light receiving amount of the light beam LB in the light receiving unit 60 decreases, and an inverted mountain-shaped (mortar-shaped) profile AE Q (AE q ) appears in the waveform of the light receiving amount AE as shown in FIG.

図6において、信号処理部56は、アナログ−ディジタル(A/D)変換器62、受光量データメモリ64、演算部66、設定部68および出力部70を有している。このうち、受光量データメモリ64、演算部66、設定部68および出力部70は、たとえばマイクロコンピュータにより構成される。
In FIG. 6, the signal processing unit 56 includes an analog-digital (A / D) converter 62, a received light amount data memory 64, a calculation unit 66, a setting unit 68, and an output unit 70. Among these, the received light amount data memory 64, the calculation part 66, the setting part 68, and the output part 70 are comprised by the microcomputer, for example.

A/D変換器62は、図10に示すように、光センサ54(受光部60)からの受光量信号ASを所定の周期Δt(たとえば1.5msec)でディジタル信号つまり受光量データ・・A0,A1,A2,・・に変換する。受光量データメモリ64は、A/D変換器62より出力された受光量データ・・A0,A1,A2,・・を現時点から一定時間前までの分(一定データ量)だけ上書き方式で一時的に格納する。   As shown in FIG. 10, the A / D converter 62 converts the received light amount signal AS from the optical sensor 54 (light receiving unit 60) into a digital signal, that is, received light amount data... A0 with a predetermined period Δt (for example, 1.5 msec). , A1, A2,. The received light amount data memory 64 temporarily overwrites the received light amount data output from the A / D converter 62 by a part (a constant data amount) from the present time to a predetermined time before (A0, A1, A2,...). To store.

演算部66は、図11に示すように、サンプル値抽出部72、減少分演算部74、積算部76および判定部78を備えている。   As shown in FIG. 11, the calculation unit 66 includes a sample value extraction unit 72, a decrease calculation unit 74, an integration unit 76, and a determination unit 78.

図12につき、サンプル値抽出部72の作用を説明する。図中、[1],[2],[3],[4]は抽出点を表わす。サンプル値抽出部72は、受光量データメモリ64に格納されている受光量データの中から、一定時間(p*Δt)置きの複数(n)個たとえば4個の受光量データ(Ai-3p,Ai-2p,Ai-p,Ai)を抽出する。たとえば、p=10とすると、受光量データメモリ64に受光量データA30が格納された直後に、サンプル値抽出部72は、その受光量データA30と、それよりも10個分(10Δt分)前の受光量データA20と、さらにそれよりも10個分(10Δt分)前の受光量データA10と、さらにそれよりも10個分(10Δt分)前の受光量データA0とを同時に抽出する。   The operation of the sample value extraction unit 72 will be described with reference to FIG. In the figure, [1], [2], [3], and [4] represent extraction points. The sample value extraction unit 72 selects a plurality of (n), for example, four received light amount data (Ai-3p, A) at a predetermined time (p * Δt) from the received light amount data stored in the received light amount data memory 64. Ai-2p, Ai-p, Ai) are extracted. For example, if p = 10, immediately after the received light amount data A30 is stored in the received light amount data memory 64, the sample value extracting unit 72 will receive the received light amount data A30 and 10 (10Δt minutes) before that. The received light amount data A20, the received light amount data A10 for 10 (10Δt) before and the received light amount data A0 for 10 (10 Δt) before that are extracted simultaneously.

そして、受光量データA30の次の受光量データA31が受光量データメモリ64に格納されると、その直後にサンプル値抽出部72は上記と同様の仕方で一定時間(10Δt分)置きの4個の受光量データ(A1,A11,A21,A31)を抽出する。そして、受光量データA31の次の受光量データA32が受光量データメモリ64に格納されると、その直後にサンプル値抽出部72はやはり上記と同様の仕方で一定時間(10Δt分)置きの4個の受光量データ(A2,A12,A22,A32)を抽出するようになっている。   When the received light amount data A31 next to the received light amount data A30 is stored in the received light amount data memory 64, immediately after that, the sample value extracting unit 72 is set to four pieces every predetermined time (10 Δt minutes) in the same manner as described above. The received light amount data (A1, A11, A21, A31) is extracted. When the received light amount data A32 next to the received light amount data A31 is stored in the received light amount data memory 64, the sample value extraction unit 72 immediately after that, in the same manner as described above, every 4 time intervals (10 Δt minutes). The received light amount data (A2, A12, A22, A32) are extracted.

なお、サンプル値抽出部72で用いる抽出点の個数n(好ましくは3以上)および間隔pは、設定部68(図6)より与えられる。
Note that the number n (preferably 3 or more) of extraction points and the interval p used in the sample value extraction unit 72 are given from the setting unit 68 (FIG. 6).

図13につき、減少分演算部74の作用を説明する。減少分演算部74は、サンプル値抽出部72により抽出された4個の受光量データ(Ai-3p,Ai-2p,Ai-p,Ai)についてそれぞれ受光量減少分(δi-3p,δi-2p,δi-p,δi)を求める。ここで、δi-3p=N AE −Ai-3p,δi-2p=N AE −Ai-2p,δi-p= AE −Ai-p,δi=NAE−Aiであり、NAEは受光量基準値である。したがって、たとえば時間t30で得られる受光量減少分(δ0,δ10,δ20,δ30)は、δ0=NAE−A0,δ10=NAE−A10、δ20=NAE−A20,δ30=NAE−A30である。
The operation of the decrease calculation unit 74 will be described with reference to FIG. The decrease calculation unit 74 performs the received light amount decrease (δi-3p, δi−) for the four received light amount data (Ai-3p, Ai-2p, Ai-p, Ai) extracted by the sample value extraction unit 72, respectively. 2p, δi-p, δi). Here, a δi-3p = N AE -Ai- 3p, δi-2p = N AE -Ai-2p, δi-p = N AE -Ai-p, δi = N AE -Ai, N AE light receiving amount This is the reference value. Thus, for example, time received light amount decrease obtained by t30 (δ0, δ10, δ20, δ30) is, δ0 = N AE -A0, δ10 = N AE -A10, δ20 = N AE -A20, δ30 = N AE -A30 It is.

受光量基準値NAEは、好ましくは、基板搬送方向(X方向)において基板Gの先頭部分が光センサ54を通過した際に受光部60で得られた光ビーム受光量の値でよく、あるいは4個の抽出点[1],[2],[3],[4]の中で最も時間的に古いもの[4]よりも一定時間前(たとえば10msec)に受光部60で得られた光ビーム受光量の値に相当し、100%の値に設定される。 The received light amount reference value N AE is preferably a value of the received light beam amount obtained by the light receiving unit 60 when the leading portion of the substrate G passes through the optical sensor 54 in the substrate transport direction (X direction). Light obtained by the light receiving unit 60 at a fixed time (for example, 10 msec) before [4], which is the oldest among the four extraction points [1], [2], [3], and [4]. It corresponds to the value of the amount of received light and is set to 100%.

減少分演算部74は、受光量データ(A0,A10,A20,A30)を%表示で正規化して、受光量減少分(δ0,δ10,δ20,δ30)を%表示で求める。したがって、たとえば(A0,A10,A20,A30)=(100,98,95,97)のときは、(δ0,δ10,δ20,δ30)=(0,2,5,3)となる。
The decrease calculation unit 74 normalizes the received light amount data (A 0 , A 10 , A 20 , A 30 ) in% display and obtains the received light amount decrease (δ 0, δ 10, δ 20, δ 30) in% display. Therefore, for example, when (A 0 , A 10 , A 20 , A 30 ) = (100, 98, 95, 97), (δ 0, δ 10, δ 20 , δ 30 ) = (0, 2, 5, 3) Become.

積算部76は、減少分演算部74より一括的または1フレーム(枠)FLで出力される4個の受光量減少分(δi-3p,δi-2p,δi-p,δi)を乗算して、演算結果Iiを出力する。たとえば、減少分演算部74より出力された(δ0,δ10,δ20,δ30)が(0,2,5,3)の場合、0*2*5*3の乗算が行われ、演算結果として、Ii=0が出力される。   The accumulating unit 76 multiplies four received light amount reductions (δi−3p, δi−2p, δi−p, δi) output from the decrease calculation unit 74 collectively or in one frame (frame) FL. The operation result Ii is output. For example, when (δ0, δ10, δ20, δ30) output from the decrease calculation unit 74 is (0, 2, 5, 3), multiplication of 0 * 2 * 5 * 3 is performed, and the calculation result is Ii = 0 is output.

判定部78は、積算部76より出力される演算結果Iiを設定部68(図6)からの判定しきい値ISと比較して、それらの大小関係を判定し、Ii≦ISのときは判定出力信号Wをたとえば論理値Lとし、Ii>ISのときは判定出力信号Wをたとえば論理値Hとする。判定部78より論理値Hの判定出力信号Wが出力されると、出力部70(図6)より警報信号WSが出力されるようになっている。 The determination unit 78 compares the calculation result I i output from the integration unit 76 with the determination threshold value I S from the setting unit 68 (FIG. 6), determines the magnitude relationship between them, and I i ≦ I S For example, the determination output signal W is set to the logical value L, and when I i > I S , the determination output signal W is set to the logical value H, for example. When a determination output signal W having a logical value H is output from the determination unit 78, an alarm signal WS is output from the output unit 70 (FIG. 6).

上記のように、信号処理部56においては、サンプル値抽出部72および減少分演算部74により、時間軸上に所定の間隔(p*Δt)を置いて設定される複数(n)個たとえば4個の抽出点[1],[2], [3],[4]で所定の受光量基準値NAEに対する光ビーム受光量AEの減少分(δi-3p,δi-2p,δi-p,δi)を求める第1の演算が行われる。そして、積算部76により、それら複数の抽出点[1],[2], [3],[4]よりそれぞれ得られた受光量減少分(δi-3p,δi-2p,δi-p,δi)を乗算する第2の演算が行われる。最後に、判定部78において、受光量減少分の積算値Iiを所定のしきい値ISと比較して、積算値Iiが上記しきい値ISを超えたときに、論理値Hの判定結果Wを出す第3の演算が行われる。 As described above, in the signal processing unit 56, a plurality (n) of, for example, four (4), for example, set by the sample value extraction unit 72 and the decrease calculation unit 74 with a predetermined interval (p * Δt) on the time axis. number of extraction points [1], [2], [3], [4] the decrease in the light beam received light amount AE for a given amount of received light reference value N AE in (δi-3p, δi-2p , δi-p, A first calculation for obtaining δi) is performed. Then, the integration unit 76 reduces the received light amount (δi-3p, δi-2p, δi-p, δi) respectively obtained from the plurality of extraction points [1], [2], [3], [4]. ) Is performed. Finally, the determination unit 78 compares the integrated value I i corresponding to the decrease in the amount of received light with a predetermined threshold value I S, and when the integrated value I i exceeds the threshold value I S , the logical value H A third calculation for obtaining the determination result W is performed.

ここで、判定部78が論理値Hの判定結果Wを出すということは、この裏面異物検出装置50が光ビーム受光量AEの波形の中に基準サイズを超える大きさの逆さ山形プロファイルが含まれていると判定したことを意味している。   Here, the fact that the determination unit 78 outputs the determination result W of the logical value H means that the reverse foreign object detection device 50 includes an inverted chevron profile whose size exceeds the reference size in the waveform of the light beam received light amount AE. Means that it is determined that

ここで、抽出点[1],[2], [3],[4]の先頭[1]から末尾[4]までの時間幅TSおよび上記しきい値ISは、有害裏面異物Qの高さ方向のサイズHQが下限値(つまり浮上高HCOTと塗布ギャップKとを足し合わせた値)のときに受光量AEの波形に現れる逆さ山形プロファイルの基準サイズ(直径サイズDQ、受光量減少ピーク値δQ)に応じて、最適または適度な値に設定される。 Here, the time width T S from the beginning [1] to the end [4] of the extraction points [1], [2], [3], and [4] and the threshold value I S The reference size (diameter size D Q , received light size) of the inverted chevron profile that appears in the waveform of the received light amount AE when the size H Q in the height direction is the lower limit value (that is, the value obtained by adding the flying height H COT and the coating gap K) The optimum or moderate value is set according to the amount decrease peak value δ Q ).

たとえば、基板Gの厚さTGが700μm、浮上高HCOTが40μm、塗布ギャップKが100μmの場合、高さ方向のサイズHQが140μmの有害裏面異物Qが基板Gの裏面に付着していると、基板Gの盛り上がり部GQがスリットノズル14の吐出口の高さになる。このとき、受光量AEの波形に現れる逆さ山形プロファイルの直径サイズは70μm、受光量減少ピーク値δQは7%である。これらの値(70μm,7%)は、実験から得られる。 For example, the thickness T G of the substrate G is 700 .mu.m, the flying height H COT is 40 [mu] m, if the coating gap K is 100 [mu] m, the size H Q in height direction adverse backside foreign matter Q of 140μm adhered to the back surface of the substrate G If so, the raised portion G Q of the substrate G becomes the height of the discharge port of the slit nozzle 14. At this time, the diameter size of the inverted chevron profile appearing in the waveform of the received light amount AE is 70 μm, and the received light amount decrease peak value δ Q is 7%. These values (70 μm, 7%) are obtained from experiments.

なお、基板搬送速度vは一定であるから、受光量信号ASまたは受光量AEの波形における時間軸tは一定の比例関係(X=vt)で基板搬送方向のX軸に置き換えることができる。   Since the substrate transport speed v is constant, the time axis t in the waveform of the received light amount signal AS or the received light amount AE can be replaced with the X axis in the substrate transport direction with a constant proportional relationship (X = vt).

したがって、理論的には、たとえば5%〜7%のしきい値にかければ、殆どの有害裏面異物Qを検出できるはずではある。しかし、実際には、光センサ54より出力される受光量信号ASには浮上搬送中の基板Gのゆれや光センサ54自体の振動等により殆ど1に近いSN比でノイズ成分が混じっているため、そのような判定法は有効ではない。   Therefore, theoretically, if a threshold value of, for example, 5% to 7% is applied, most harmful backside foreign matter Q should be detectable. However, in actuality, the received light amount signal AS output from the optical sensor 54 is mixed with a noise component with a signal-to-noise ratio close to 1 due to the fluctuation of the substrate G being floated and the vibration of the optical sensor 54 itself. Such a determination method is not effective.

そこで、この実施形態では、上記のように複数(n)個の抽出点[1],[2], [3],[4]よりそれぞれ得られる1フレームFLの受光量減少分(δi-3p,δi-2p,δi-p,δi)を乗算(または加算)し、その演算結果(積算値)Iiによって逆さ山形プロファイルの大きさを計るようにしている。 Therefore, in this embodiment, the received light amount decrease amount (δi−3p) of one frame FL obtained from the plurality (n) of extraction points [1], [2], [3], [4] as described above. , Δi-2p, δi-p, δi) are multiplied (or added), and the magnitude of the inverted chevron profile is measured by the calculation result (integrated value) I i .

この手法では、抽出点の全体時間幅TSが距離換算DTSで基準(下限)の直径サイズDQ(70μm)よりも適度(好ましくは1/2DQ<DTS<DQ)に小さいことが重要であり、たとえばDTS=60μmに設定される。これによって、逆さ山形プロファイルのうち、直径サイズがDTSよりも小さいものは、積算値Iiが常に零またはその付近の値をとるため、確実に有害裏面異物Qではないと判定することができる。また、逆さ山形プロファイルのうち、直径サイズがSよりも大きいものは、その逆さ山形プロファイルの大きさが積算値Iiに反映されるので、適度な値の上記しきい値ISによって有害裏面異物Qであることを確実に判別することができる。
In this method, the total time width T S of the extraction points is moderately smaller (preferably 1 / 2D Q <DT S <D Q ) than the reference (lower limit) diameter size D Q (70 μm) in the distance conversion DT S. Is important, for example, DT S = 60 μm. As a result, among the inverted chevron profiles, those whose diameter size is smaller than DT S always have the integrated value I i at or near zero, so that it can be determined that it is not the harmful backside foreign material Q. . Also, of the inverted chevron profile, what is greater than D T S diameter size, the magnitude of the inverted chevron profile is reflected in the integrated value I i, harmful by the threshold value I S moderate values It can be reliably determined that the foreign object Q is the back surface.

たとえば、上記のように高さ方向のサイズHQが140μmの最小有害裏面異物Qが基板Gの裏面に付着しているときに、受光量AEの波形に図14の(a)に示すような逆さ山形プロファイルが現れた場合、積算値Iiは1*4.5*6*2.5=67.5になる。この積算値Iiはノイズ成分の影響を殆ど受けない当該逆さ山形プロファイル固有の属性値である。したがって、上記しきい値ISをたとえば60に設定することで、当該裏面異物が有害裏面異物Qであることを的確かつ確実に判別することができる。 For example, when the minimum toxic backside foreign matter Q in the height direction size H Q as described above 140μm is attached to the rear surface of the substrate G, the waveform of the received light amount AE as shown in FIG. 14 (a) When the inverted chevron profile appears, the integrated value I i is 1 * 4.5 * 6 * 2.5 = 67.5. The integrated value I i is an attribute value unique to the inverted chevron profile that is hardly affected by the noise component. Therefore, by setting the threshold value IS to 60, for example, it is possible to accurately and surely determine that the backside foreign matter is the harmful backside foreign matter Q.

因みに、高さ方向のサイズHQが190μmの有害裏面異物Qが基板Gの裏面に付着している場合、受光量AEの波形には図14の(b)に示すような逆さ山形プロファイルが現れる。この場合、積算値Iiは8.5*9*5*2=675になり、上記しきい値IS(60)を優に超えるので、やはり確実に有害裏面異物Qであると判定することができる。 Incidentally, if the size H Q in the height direction harmful backside foreign matter Q of 190μm is attached to the rear surface of the substrate G, appears inverted chevron profile as shown in FIG. 14 (b) the waveform of the received light amount AE . In this case, the integrated value I i is 8.5 * 9 * 5 * 2 = 675, which is well above the threshold value I S (60). Can do.

また、高さ方向のサイズHQが100μmの実質的無害裏面異物qが基板Gの裏面に付着している場合、受光量AEの波形には図14の(c)に示すような逆さ山形プロファイルが現れる。この場合、積算値Iiは0*1*3*0.2=0になり、当該裏面異物が有害裏面異物Qではないと明確に判定することができる。 Further, when a substantially harmless back surface foreign substance q having a height size H Q of 100 μm is attached to the back surface of the substrate G, the waveform of the received light amount AE has an inverted chevron profile as shown in FIG. Appears. In this case, the integrated value I i is 0 * 1 * 3 * 0.2 = 0, and it can be clearly determined that the backside foreign matter is not the harmful backside foreign matter Q.

以上、本発明の好適な実施形態を説明したが、本発明は上述した実施形態に限定されるものではなく、その技術的思想の範囲内で種種の変形または変更が可能である。   The preferred embodiments of the present invention have been described above, but the present invention is not limited to the above-described embodiments, and various modifications or changes can be made within the scope of the technical idea.

たとえば、図15に示すように、信号処理部56の演算部66を、サンプル値抽出部72、パターン比較部80および判定部82で構成することができる。ここで、パターン比較部80は、図16に示すように、時間軸上で光ビーム受光量の波形に基準サイズ(基準直径サイズDQ、基準受光量減少ピーク値δQ)またはそれより一回り小さなサイズを有する逆さ山形プロファイルのモデルパターンMPを定規として当てて、複数箇所(たとえば5箇所)[1]〜[5]で逆さ山形プロファイルの受光量減少分(δi-4p,δi-3p,δi-2p,δi-p,δi)とモデルパターンMPとを比較して、その大小関係を+/−の2値で出力する。なお、モデルパターンMPのデータは設定部68(図6)より与えられる。 For example, as shown in FIG. 15, the calculation unit 66 of the signal processing unit 56 can be configured by a sample value extraction unit 72, a pattern comparison unit 80, and a determination unit 82. Here, as shown in FIG. 16, the pattern comparison unit 80 has a reference size (reference diameter size DQ, reference received light amount decrease peak value δ Q ) or slightly smaller than the waveform of the received light beam amount on the time axis. The model pattern MP of the inverted chevron profile having the size is applied as a ruler, and the received light amount decrease amount (δi-4p, δi-3p, δi-) at the plural chevron profiles (for example, five locations) [1] to [5] 2p, δi-p, δi) and the model pattern MP are compared, and the magnitude relationship is output as a binary value of +/−. The data of the model pattern MP is given from the setting unit 68 (FIG. 6).

たとえば、高さ方向のサイズHQが140μmの最小有害裏面異物Qが基板Gの裏面に付着しているときは、図16の(a)のようになり、比較箇所[1]〜[5]のすべてにおいて逆さ山形プロファイルの受光量減少分(δi-4p,δi-3p,δi-2p,δi-p,δi)がモデルパターンMPを上回っているので、パターン比較部80より(+,+,+,+,+)の比較結果出力が得られる。この場合、判定部82は、比較結果出力がすべて+なので、有害裏面異物Qが検出された旨の論理値Hの判定結果Wを出す。 For example, when the minimum harmful back foreign material Q having a height size H Q of 140 μm is attached to the back surface of the substrate G, it becomes as shown in FIG. 16 (a), and the comparison points [1] to [5] , The amount of decrease in received light amount (δi-4p, δi-3p, δi-2p, δi-p, δi) of the inverted chevron profile exceeds the model pattern MP, so that the pattern comparison unit 80 (+, +, +, +, +) Comparison result output is obtained. In this case, since all the comparison result outputs are +, the determination unit 82 outputs a determination result W of a logical value H indicating that the harmful backside foreign matter Q has been detected.

また、高さ方向のサイズHQが190μmの有害裏面異物Qが基板Gの裏面に付着している場合は、図16の(b)のようになり、やはり比較箇所[1]〜[5]のすべてにおいて逆さ山形プロファイルの受光量減少分(δi-4p,δi-3p,δi-2p,δi-p,δi)がモデルパターンMPを上回っているので、パターン比較部80より(+,+,+,+,+)の比較結果出力が得られ、判定部82は有害裏面異物Qが検出された旨の論理値Hの判定結果Wを出力する。 Further, when a harmful back foreign material Q having a size H Q of 190 μm in the height direction adheres to the back surface of the substrate G, it becomes as shown in FIG. 16 (b), and again comparison points [1] to [5] , The amount of decrease in received light amount (δi-4p, δi-3p, δi-2p, δi-p, δi) of the inverted chevron profile exceeds the model pattern MP, so that the pattern comparison unit 80 (+, +, +, +, +) Comparison result output is obtained, and the determination unit 82 outputs a determination result W of a logical value H indicating that the harmful backside foreign matter Q is detected.

しかし、高さ方向のサイズHQが100μmの実質的無害裏面異物qが基板Gの裏面に付着している場合は、図16の(c)のようになり、比較箇所[4],[5]では逆さ山形プロファイルの受光量減少分(δi-4p,δi-3p)がモデルパターンMPを上回っているものの、比較箇所[1],[2],[3]では逆さ山形プロファイルの受光量減少分(δi-2p,δi-p,δi)がモデルパターンMPを下回っている。この場合、パターン比較部80より(+,+,−,−,−)の比較結果出力が得られる。これにより、判定部82は、比較結果出力の一部が"−"であるから、有害裏面異物Qではない旨の論理値Lの判定結果Wを出力する。 However, when a substantially harmless back surface foreign material q having a size H Q of 100 μm in the height direction adheres to the back surface of the substrate G, it becomes as shown in FIG. ], The amount of light received by the inverted chevron profile (δi-4p, δi-3p) exceeds the model pattern MP, but at the comparison points [1], [2], and [3], the amount of light received by the inverted chevron profile is reduced. Minutes (δi−2p, δi-p, δi) are below the model pattern MP. In this case, the comparison result output of (+, +, −, −, −) is obtained from the pattern comparison unit 80. Accordingly, the determination unit 82 outputs the determination result W of the logical value L indicating that it is not the harmful backside foreign material Q because a part of the comparison result output is “−”.

本発明の塗布装置における処理液としては、レジスト液以外にも、たとえば層間絶縁材料、誘電体材料、配線材料等の塗布液も可能であり、各種薬液、現像液やリンス液等も可能である。本発明における被処理基板はLCD基板に限らず、他のフラットパネルディスプレイ用基板、半導体ウエハ、CD基板、フォトマスク、プリント基板等も可能である。本発明の裏面異物検出方法および裏面異物検出装置は、特に平流し方式の塗布装置に好適に適用できるが、平流し方式を採る他の種類の基板処理装置にも適用可能である。   As the treatment liquid in the coating apparatus of the present invention, in addition to the resist liquid, for example, a coating liquid such as an interlayer insulating material, a dielectric material, and a wiring material can be used, and various chemical liquids, developer liquids, rinse liquids, and the like are also possible. . The substrate to be processed in the present invention is not limited to an LCD substrate, and other flat panel display substrates, semiconductor wafers, CD substrates, photomasks, printed substrates and the like are also possible. The backside foreign matter detection method and backside foreign matter detection apparatus of the present invention can be suitably applied to a flat-flow type coating apparatus, but can also be applied to other types of substrate processing apparatuses that adopt a flat-flow type.

10 浮上ステージ
12 搬送機構
14 スリットノズル
16 噴出口
18 吸引口
40 レジスト供給機構
50 裏面異物検出装置
光センサ
信号処理部
DESCRIPTION OF SYMBOLS 10 Floating stage 12 Conveyance mechanism 14 Slit nozzle 16 Jet outlet 18 Suction port 40 Resist supply mechanism 50 Back surface foreign material detection apparatus 5 4 Optical sensor 5 6 Signal processing part

Claims (30)

多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板上に処理液を供給して前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出方法であって、
前記浮上ステージを挟んでその両側に対向して配置される投光部と受光部との間で、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を取得する第1の工程と、
前記受光量信号に基づいて、前記光ビーム受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビーム受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害裏面異物を検出した旨の警報信号を発生する第2の工程と
を有し、
前記基準サイズは、高さ方向における基準の受光量減少ピーク値と、横方向における基準の直径サイズとを含む、裏面異物検出方法。
A slit nozzle that conveys a substrate to be processed so as to pass through a floating region of a floating stage provided with a mixture of a large number of jet nozzles and a large number of suction ports at a predetermined flying height, and is disposed above the floating region. In a coating apparatus for forming a coating film of the processing liquid by supplying a processing liquid onto the substrate that passes further below, the backside foreign matter attached to the back surface of the substrate and harmful to the slit nozzle A backside foreign matter detection method for detecting at a position upstream of the slit nozzle in the substrate transport direction,
Between the light projecting unit and the light receiving unit arranged to face both sides of the levitation stage, a light beam horizontally passing across the upper surface of the substrate passing through the levitation region is transmitted and received, A first step of obtaining a received light amount signal representing a received light amount of the light beam from the light receiving unit;
On the basis of the received light amount signal, a profile waveform of the light receiving amount of the light beam is inverted chevron on the time axis to be monitored, the size exceeding a predetermined reference size in amount of light received waveform of the light beam of when detecting the inverted chevron profile, it has a second step of generating an alarm signal indicative of the detection of the harmful backside foreign matter,
The backside foreign matter detection method , wherein the reference size includes a reference received light amount decrease peak value in a height direction and a reference diameter size in a horizontal direction .
前記基準の受光量減少ピーク値および前記基準の直径サイズは、前記基板の厚さ、前記浮上高および前記スリットノズルと前記基板との間の塗布ギャップに依存し、実験値を基に設定される、請求項1に記載の裏面異物検出方法。   The reference light reception amount decrease peak value and the reference diameter size depend on the thickness of the substrate, the flying height, and the coating gap between the slit nozzle and the substrate, and are set based on experimental values. The backside foreign matter detection method according to claim 1. 多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板上に処理液を供給して前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出方法であって、
前記浮上ステージを挟んでその両側に対向して配置される投光部と受光部との間で、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を取得する第1の工程と、
前記受光量信号に基づいて、前記光ビーム受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビーム受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害裏面異物を検出した旨の警報信号を発生する第2の工程と
を有し、
前記浮上高と前記スリットノズルと前記基板との間の塗布ギャップとを足し合わせた値を基準にして、前記有害な裏面異物としての高さ方向のサイズの下限値を設定する、裏面異物検出方法。
A slit nozzle that conveys a substrate to be processed so as to pass through a floating region of a floating stage provided with a mixture of a large number of jet nozzles and a large number of suction ports at a predetermined flying height, and is disposed above the floating region. In a coating apparatus for forming a coating film of the processing liquid by supplying a processing liquid onto the substrate that passes further below, the backside foreign matter attached to the back surface of the substrate and harmful to the slit nozzle A backside foreign matter detection method for detecting at a position upstream of the slit nozzle in the substrate transport direction,
Between the light projecting unit and the light receiving unit arranged to face both sides of the levitation stage, a light beam horizontally passing across the upper surface of the substrate passing through the levitation region is transmitted and received, A first step of obtaining a received light amount signal representing a received light amount of the light beam from the light receiving unit;
On the basis of the received light amount signal, a profile waveform of the light receiving amount of the light beam is inverted chevron on the time axis to be monitored, the size exceeding a predetermined reference size in amount of light received waveform of the light beam of when detecting the inverted chevron profile, it has a second step of generating an alarm signal indicative of the detection of the harmful backside foreign matter,
A backside foreign matter detection method for setting a lower limit value of the size in the height direction as the harmful backside foreign matter based on a value obtained by adding the flying height and a coating gap between the slit nozzle and the substrate. .
多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板上に処理液を供給して前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出方法であって、
前記浮上ステージを挟んでその両側に対向して配置される投光部と受光部との間で、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を取得する第1の工程と、
前記受光量信号に基づいて、前記光ビーム受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビーム受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害裏面異物を検出した旨の警報信号を発生する第2の工程と
を有し、
前記第2の工程は、
時間軸上に所定の間隔を置いて設定される複数の抽出点で所定の受光量基準値に対する前記光ビームの受光量の減少分を求める第3の工程と、
前記複数の抽出点よりそれぞれ得られた受光量減少分を積算する第4の工程と、
前記受光量減少分の積算値を所定のしきい値と比較して、前記積算値が前記しきい値を超えたときに、前記光ビームの受光量の波形の中に前記基準サイズを超える大きさの逆さ山形プロファイルが含まれていると判定する第5の工程と
を含む、裏面異物検出方法。
A slit nozzle that conveys a substrate to be processed so as to pass through a floating region of a floating stage provided with a mixture of a large number of jet nozzles and a large number of suction ports at a predetermined flying height, and is disposed above the floating region. In a coating apparatus for forming a coating film of the processing liquid by supplying a processing liquid onto the substrate that passes further below, the backside foreign matter attached to the back surface of the substrate and harmful to the slit nozzle A backside foreign matter detection method for detecting at a position upstream of the slit nozzle in the substrate transport direction,
Between the light projecting unit and the light receiving unit arranged to face both sides of the levitation stage, a light beam horizontally passing across the upper surface of the substrate passing through the levitation region is transmitted and received, A first step of obtaining a received light amount signal representing a received light amount of the light beam from the light receiving unit;
On the basis of the received light amount signal, a profile waveform of the light receiving amount of the light beam is inverted chevron on the time axis to be monitored, the size exceeding a predetermined reference size in amount of light received waveform of the light beam of when detecting the inverted chevron profile, it has a second step of generating an alarm signal indicative of the detection of the harmful backside foreign matter,
The second step includes
A third step of obtaining a decrease in the received light amount of the light beam with respect to a predetermined received light amount reference value at a plurality of extraction points set at predetermined intervals on the time axis;
A fourth step of integrating the received light amount decrease obtained from each of the plurality of extraction points;
The integrated value of the decrease in the amount of received light is compared with a predetermined threshold value, and when the integrated value exceeds the threshold value, the received light amount waveform of the light beam is larger than the reference size. A fifth step of determining that the inverted chevron profile is included;
A method for detecting foreign matter on the back surface.
前記第3の工程において前記光ビーム受光量の減少分をパーセント表示で求め、前記第4の工程において前記受光量減少分の積算を乗算によって行う、請求項に記載の裏面異物検出方法。 5. The backside foreign matter detection method according to claim 4 , wherein, in the third step, a decrease in the received light amount of the light beam is obtained by percentage display, and in the fourth step, the integration of the decrease in the received light amount is performed by multiplication. 前記受光量基準値は、基板搬送方向において前記基板の先頭部分が前記投光部および前記受光部を通過した際に前記受光部で得られた光ビーム受光量の値である、請求項または請求項に記載の裏面異物検出方法。 The received light quantity reference value is the value of the amount of light received obtained light beam by the light receiving portion when the head portion of the substrate in the substrate conveying direction has passed through the light projecting unit and the light receiving unit, according to claim 4 Or the back surface foreign material detection method of Claim 5 . 前記受光量基準値は、前記複数の抽出点の中で最も時間的に古いものよりも一定時間前に前記受光部で得られた光ビーム受光量の値である、請求項または請求項に記載の裏面異物検出方法。 The received light quantity reference value, which is a value of said received light amount of the most time-old light beam obtained by the light receiving portion before a predetermined time than among a plurality of sampled points, claim 4 or claim 5. The backside foreign matter detection method according to 5. 前記基準サイズは、高さ方向における基準の受光量減少ピーク値と、横方向における基準の直径サイズとを含む、請求項4〜7のいずれか一項に記載の裏面異物検出方法。The backside foreign matter detection method according to any one of claims 4 to 7, wherein the reference size includes a reference received light amount decrease peak value in a height direction and a reference diameter size in a horizontal direction. 前記複数の抽出点の先頭から末尾までの時間幅は、前記基準の直径サイズよりは小さくて、前記基準の直径サイズの半分よりは大きい、請求項に記載の裏面異物検出方法。 The backside foreign object detection method according to claim 8 , wherein a time width from the beginning to the end of the plurality of extraction points is smaller than the reference diameter size and larger than half of the reference diameter size. 前記複数の抽出点を3箇所以上設ける、請求項〜9のいずれか一項に記載の裏面異物検出方法。 The backside foreign matter detection method according to any one of claims 4 to 9, wherein the plurality of extraction points are provided at three or more locations. 多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板上に処理液を供給して前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出方法であって、
前記浮上ステージを挟んでその両側に対向して配置される投光部と受光部との間で、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を取得する第1の工程と、
前記受光量信号に基づいて、前記光ビーム受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビーム受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害裏面異物を検出した旨の警報信号を発生する第2の工程と
を有し、
前記第2の工程において、時間軸上で前記光ビームの受光量の波形に前記基準サイズまたはそれより一回り小さなサイズを有する逆さ山形プロファイルのモデルパターンを定規として当てて、前記モデルパターン内で時間軸上に所定の間隔を置いて設定される複数の比較箇所で前記モデルパターンを上回る大きさの逆さ山形プロファイルが見つかれば、それは前記基準サイズを超える大きさの逆さ山形プロファイルであると判定する、裏面異物検出方法。
A slit nozzle that conveys a substrate to be processed so as to pass through a floating region of a floating stage provided with a mixture of a large number of jet nozzles and a large number of suction ports at a predetermined flying height, and is disposed above the floating region. In a coating apparatus for forming a coating film of the processing liquid by supplying a processing liquid onto the substrate that passes further below, the backside foreign matter attached to the back surface of the substrate and harmful to the slit nozzle A backside foreign matter detection method for detecting at a position upstream of the slit nozzle in the substrate transport direction,
Between the light projecting unit and the light receiving unit arranged to face both sides of the levitation stage, a light beam horizontally passing across the upper surface of the substrate passing through the levitation region is transmitted and received, A first step of obtaining a received light amount signal representing a received light amount of the light beam from the light receiving unit;
On the basis of the received light amount signal, a profile waveform of the light receiving amount of the light beam is inverted chevron on the time axis to be monitored, the size exceeding a predetermined reference size in amount of light received waveform of the light beam of when detecting the inverted chevron profile, it has a second step of generating an alarm signal indicative of the detection of the harmful backside foreign matter,
In the second step, a model pattern of an inverted chevron profile having the reference size or a size slightly smaller than the reference size is applied to the waveform of the received light amount of the light beam on the time axis as a ruler. If an inverted chevron profile having a size exceeding the model pattern is found at a plurality of comparison points set at predetermined intervals on the axis, it is determined that the inverted chevron profile has a size exceeding the reference size. Backside foreign object detection method.
多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板に向けて処理液を供給して、前記基板上に前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出装置であって、
前記浮上ステージを挟んでその両側に対向して配置される投光部および受光部を有し、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを前記投光部と前記受光部との間で送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を出力する光センサと、
前記光センサより出力される前記受光量信号に基づいて、前記光ビーム受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビーム受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害裏面異物を検出した旨の警報信号を発生する信号処理部と
を有し、
前記基準サイズは、高さ方向における基準の受光量減少ピーク値と横方向における基準の直径サイズとを含む、裏面異物検出装置。
A slit nozzle that conveys a substrate to be processed so as to pass through a floating region of a floating stage provided with a mixture of a large number of jet nozzles and a large number of suction ports at a predetermined flying height, and is disposed above the floating region. In a coating apparatus for supplying a treatment liquid toward the substrate passing further below and forming a coating film of the treatment liquid on the substrate, the adhesion to the back surface of the substrate and the slit nozzle A backside foreign matter detection device for detecting harmful backside foreign matter at a position upstream of the slit nozzle in the substrate transport direction,
A light projecting unit and a light receiving unit disposed opposite to each other on both sides of the levitation stage, and a light beam traversing horizontally across the upper surface of the substrate passing through the levitation region; An optical sensor that transmits and receives light to and from the light receiving unit, and outputs a received light amount signal representing the received light amount of the light beam from the light receiving unit;
Based on the received light amount signal output from the optical sensor, a profile in which the waveform of the received light amount of the light beam has an inverted mountain shape on the time axis is monitored, and a predetermined amount of the received light amount waveform of the light beam is set as a monitoring target. of when detecting the magnitude inverted chevron profile of exceeding the reference size, it has a signal processing unit for generating an alarm signal indicative of the detection of the harmful backside foreign matter,
The backside foreign matter detection device, wherein the reference size includes a reference received light amount decrease peak value in a height direction and a reference diameter size in a horizontal direction.
前記信号処理部は、前記基板の厚さ、前記浮上高および前記スリットノズルと前記基板と間の塗布ギャップに依存して実験値に基づいて設定された前記基準の受光量減少ピーク値および前記基準の直径サイズを用いる、請求項12に記載の裏面異物検出装置。 The signal processing unit is configured to set the reference received light amount decrease peak value and the reference that are set based on experimental values depending on the thickness of the substrate, the flying height, and a coating gap between the slit nozzle and the substrate. The backside foreign object detection device according to claim 12 , wherein a diameter size of 10 mm is used. 多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板に向けて処理液を供給して、前記基板上に前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出装置であって、
前記浮上ステージを挟んでその両側に対向して配置される投光部および受光部を有し、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを前記投光部と前記受光部との間で送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を出力する光センサと、
前記光センサより出力される前記受光量信号に基づいて、前記光ビーム受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビーム受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害裏面異物を検出した旨の警報信号を発生する信号処理部と
を有し、
前記浮上高と前記スリットノズルと前記基板と間の塗布ギャップとを足し合わせた値を基準にして、前記有害な裏面異物としての高さ方向サイズの下限値が設定されている、裏面異物検出装置。
A slit nozzle that conveys a substrate to be processed so as to pass through a floating region of a floating stage provided with a mixture of a large number of jet nozzles and a large number of suction ports at a predetermined flying height, and is disposed above the floating region. In a coating apparatus for supplying a treatment liquid toward the substrate passing further below and forming a coating film of the treatment liquid on the substrate, the adhesion to the back surface of the substrate and the slit nozzle A backside foreign matter detection device for detecting harmful backside foreign matter at a position upstream of the slit nozzle in the substrate transport direction,
A light projecting unit and a light receiving unit disposed opposite to each other on both sides of the levitation stage, and a light beam traversing horizontally across the upper surface of the substrate passing through the levitation region; An optical sensor that transmits and receives light to and from the light receiving unit, and outputs a received light amount signal representing the received light amount of the light beam from the light receiving unit;
Based on the received light amount signal output from the optical sensor, a profile in which the waveform of the received light amount of the light beam has an inverted mountain shape on the time axis is monitored, and a predetermined amount of the received light amount waveform of the light beam is set as a monitoring target. of when detecting the magnitude inverted chevron profile of exceeding the reference size, it has a signal processing unit for generating an alarm signal indicative of the detection of the harmful backside foreign matter,
A backside foreign matter detection device in which a lower limit value of the size in the height direction as the harmful backside foreign matter is set on the basis of a value obtained by adding the flying height and a coating gap between the slit nozzle and the substrate. .
多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板に向けて処理液を供給して、前記基板上に前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出装置であって、
前記浮上ステージを挟んでその両側に対向して配置される投光部および受光部を有し、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを前記投光部と前記受光部との間で送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を出力する光センサと、
前記光センサより出力される前記受光量信号に基づいて、前記光ビーム受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビーム受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害裏面異物を検出した旨の警報信号を発生する信号処理部と
を有し、
前記信号処理部は、
時間軸上に所定の間隔を置いて設定される複数の抽出点で所定の受光量基準値に対する前記光ビームの受光量の減少分を求める第1の演算部と、
前記複数の抽出点よりそれぞれ得られた受光量減少分を積算する第2の演算部と、
前記受光量減少分の積算値を所定のしきい値と比較して、前記積算値が前記しきい値を超えたときに、前記光ビームの受光量の波形の中に前記基準サイズを超える大きさの逆さ山形プロファイルが含まれていると判定する第3の演算部と
を含む、裏面異物検出装置。
A slit nozzle that conveys a substrate to be processed so as to pass through a floating region of a floating stage provided with a mixture of a large number of jet nozzles and a large number of suction ports at a predetermined flying height, and is disposed above the floating region. In a coating apparatus for supplying a treatment liquid toward the substrate passing further below and forming a coating film of the treatment liquid on the substrate, the adhesion to the back surface of the substrate and the slit nozzle A backside foreign matter detection device for detecting harmful backside foreign matter at a position upstream of the slit nozzle in the substrate transport direction,
A light projecting unit and a light receiving unit disposed opposite to each other on both sides of the levitation stage, and a light beam traversing horizontally across the upper surface of the substrate passing through the levitation region; An optical sensor that transmits and receives light to and from the light receiving unit, and outputs a received light amount signal representing the received light amount of the light beam from the light receiving unit;
Based on the received light amount signal output from the optical sensor, a profile in which the waveform of the received light amount of the light beam has an inverted mountain shape on the time axis is monitored, and a predetermined amount of the received light amount waveform of the light beam is set as a monitoring target. of when detecting the magnitude inverted chevron profile of exceeding the reference size, it has a signal processing unit for generating an alarm signal indicative of the detection of the harmful backside foreign matter,
The signal processing unit
A first calculation unit for obtaining a decrease in the received light amount of the light beam with respect to a predetermined received light amount reference value at a plurality of extraction points set at predetermined intervals on the time axis;
A second calculation unit that integrates a decrease in received light amount respectively obtained from the plurality of extraction points;
The integrated value of the decrease in the amount of received light is compared with a predetermined threshold value, and when the integrated value exceeds the threshold value, the received light amount waveform of the light beam is larger than the reference size. A third calculation unit that determines that the inverted chevron profile is included;
A backside foreign object detection device including:
前記第1の演算部は前記光ビーム受光量の減少分をパーセント表示で求め、前記第2の演算部は前記受光量減少分の積算を乗算によって行う、請求項15に記載の裏面異物検出装置。 The backside foreign object detection according to claim 15 , wherein the first calculation unit obtains a decrease in the received light amount of the light beam as a percentage display, and the second calculation unit performs multiplication by multiplying the decrease in the received light amount. apparatus. 前記受光量基準値は、基板搬送方向において前記基板の先頭部分が前記投光部および前記受光部を通過した際に前記受光部で得られた光ビーム受光量の値である、請求項15または請求項16に記載の裏面異物検出装置。 The received light quantity reference value is the value of the amount of light received obtained light beam by the light receiving portion when the head portion of the substrate in the substrate conveying direction has passed through the light projecting unit and the light receiving unit, according to claim 15 Or the back surface foreign material detection apparatus of Claim 16 . 前記受光量基準値は、前記複数の抽出点の中で最も時間的に古いものよりも一定時間前に前記受光部で得られた光ビーム受光量の値である、請求項15または請求項16に記載の裏面異物検出装置。 The received light quantity reference value, which is a value of said received light amount of the most time-old light beam obtained by the light receiving portion before a predetermined time than among a plurality of sampled points, claim 15 or claim 16. A backside foreign matter detection device according to 16 . 前記基準サイズは、高さ方向における基準の受光量減少ピーク値と横方向における基準の直径サイズとを含む、請求項15〜18のいずれか一項に記載の裏面異物検出装置。The backside foreign object detection device according to any one of claims 15 to 18, wherein the reference size includes a reference light reception amount decrease peak value in a height direction and a reference diameter size in a horizontal direction. 前記複数の抽出点の先頭から末尾までの時間幅は、前記基準の直径サイズよりは小さくて、前記基準の直径サイズの半分よりは大きい、請求項19に記載の裏面異物検出装置。 The backside foreign object detection device according to claim 19 , wherein a time width from the beginning to the end of the plurality of extraction points is smaller than the reference diameter size and larger than half of the reference diameter size. 前記複数の抽出点を3箇所以上設ける、請求項15〜20のいずれか一項に記載の裏面異物検出装置。 The back surface foreign matter detection device according to any one of claims 15 to 20, wherein the plurality of extraction points are provided at three or more locations. 多数の噴出口と多数の吸引口とが混在して設けられた浮上ステージの浮上領域を所定の浮上高で通過するように被処理基板を搬送し、前記浮上領域の上方に配置されるスリットノズルよりその下を通過する前記基板に向けて処理液を供給して、前記基板上に前記処理液の塗布膜を形成する塗布装置において、前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を前記スリットノズルよりも基板搬送方向の上流側の位置で検出するための裏面異物検出装置であって、
前記浮上ステージを挟んでその両側に対向して配置される投光部および受光部を有し、前記浮上領域を通過する前記基板の上面を掠めて水平に横断する光ビームを前記投光部と前記受光部との間で送受させて、前記受光部より前記光ビームの受光量を表わす受光量信号を出力する光センサと、
前記光センサより出力される前記受光量信号に基づいて、前記光ビーム受光量の波形が時間軸上で逆さ山形になるプロファイルを監視対象とし、前記光ビーム受光量の波形の中に所定の基準サイズを超える大きさの逆さ山形プロファイルを検出したときに、前記有害裏面異物を検出した旨の警報信号を発生する信号処理部と
を有し、
前記信号処理部は、時間軸上で前記光ビーム受光量の波形に前記基準サイズまたはそれより一回り小さなサイズを有する逆さ山形プロファイルのモデルパターンを定規として当てて、前記モデルパターン内で時間軸上に所定の間隔を置いて設定される複数の比較箇所で前記モデルパターンを上回る大きさの逆さ山形プロファイルが見つかれば、それは前記基準サイズを超える大きさの逆さ山形プロファイルであると判定する演算部を有する、裏面異物検出装置。
A slit nozzle that conveys a substrate to be processed so as to pass through a floating region of a floating stage provided with a mixture of a large number of jet nozzles and a large number of suction ports at a predetermined flying height, and is disposed above the floating region. In a coating apparatus for supplying a treatment liquid toward the substrate passing further below and forming a coating film of the treatment liquid on the substrate, the adhesion to the back surface of the substrate and the slit nozzle A backside foreign matter detection device for detecting harmful backside foreign matter at a position upstream of the slit nozzle in the substrate transport direction,
A light projecting unit and a light receiving unit disposed opposite to each other on both sides of the levitation stage, and a light beam traversing horizontally across the upper surface of the substrate passing through the levitation region; An optical sensor that transmits and receives light to and from the light receiving unit, and outputs a received light amount signal representing the received light amount of the light beam from the light receiving unit;
Based on the received light amount signal output from the optical sensor, a profile in which the waveform of the received light amount of the light beam has an inverted mountain shape on the time axis is monitored, and a predetermined amount of the received light amount waveform of the light beam is set as a monitoring target. of when detecting the magnitude inverted chevron profile of exceeding the reference size, it has a signal processing unit for generating an alarm signal indicative of the detection of the harmful backside foreign matter,
Wherein the signal processing unit, by applying a model pattern of inverted chevron profile with the reference size or smaller size slightly than the amount of light received waveform of the light beam as a ruler on the time axis, a time axis in said model pattern If an inverted chevron profile with a size larger than the model pattern is found at a plurality of comparison points set at predetermined intervals above, an arithmetic unit that determines that the inverted chevron profile has a size exceeding the reference size A backside foreign matter detection device having:
多数の噴出口と多数の吸引口とが混在して設けられた第1の浮上領域を有する浮上ステージと、
前記浮上ステージ上で空中に浮く前記基板を保持して前記第1の浮上領域を通過するように搬送する搬送機構と、
前記第1の浮上領域の上方に配置されるスリットノズルを有し、前記第1の浮上領域を通過する前記基板上に前記スリットノズルより処理液を供給する処理液供給部と、
基板搬送方向において前記スリットノズルよりも上流側の位置で、前記第1の浮上領域を通過する前記基板の裏面に付着していて前記スリットノズルに対して有害な裏面異物を検出するための請求項12〜22のいずれか一項に記載の裏面異物検出装置と
を有する塗布装置。
A levitation stage having a first levitation region provided with a mixture of a large number of jet outlets and a large number of suction ports;
A transport mechanism that holds the substrate floating in the air on the levitation stage and transports the substrate so as to pass through the first levitation region;
A treatment liquid supply unit that has a slit nozzle disposed above the first floating region, and supplies a treatment liquid from the slit nozzle onto the substrate that passes through the first floating region;
Claims for detecting a foreign substance that is attached to the back surface of the substrate passing through the first floating region and harmful to the slit nozzle at a position upstream of the slit nozzle in the substrate transport direction. The coating apparatus which has a back surface foreign material detection apparatus as described in any one of 12-22.
前記スリットノズルを昇降移動させるための昇降機構を有し、前記裏面異物検出装置より発生された前記警報信号に応答して、前記昇降機構を通じて前記スリットノズルを上昇移動させる、請求項23に記載の塗布装置。   24. The apparatus according to claim 23, further comprising an elevating mechanism for moving the slit nozzle up and down, wherein the slit nozzle is moved up and down through the elevating mechanism in response to the alarm signal generated from the backside foreign object detection device. Coating device. 前記裏面異物検出装置より発生された前記警報信号に応答して、前記処理液供給部における処理液吐出動作を停止させる、請求項23または請求項24に記載の塗布装置。   The coating apparatus according to claim 23 or 24, wherein a processing liquid discharge operation in the processing liquid supply unit is stopped in response to the alarm signal generated from the backside foreign matter detection apparatus. 前記裏面異物検出装置より発生された前記警報信号に応答して、前記搬送機構における基板搬送動作を停止させる、請求項23〜25のいずれか一項に記載の塗布装置。   The coating apparatus according to any one of claims 23 to 25, wherein a substrate transport operation in the transport mechanism is stopped in response to the alarm signal generated by the back surface foreign matter detection device. 前記浮上ステージが、基板搬送方向において前記第1の浮上領域の上流側に前記基板を浮かせるための多数の噴出口を設けた第2の浮上領域を有する、請求項23〜26のいずれか一項に記載の塗布装置。   27. The levitation stage has a second levitation region provided with a plurality of jetting ports for suspending the substrate upstream of the first levitation region in the substrate transport direction. The coating apparatus as described in. 前記第2の浮上領域内に、前記基板を搬入するための搬入部が設けられる、請求項27に記載の塗布装置。   28. The coating apparatus according to claim 27, wherein a loading unit for loading the substrate is provided in the second floating region. 前記浮上ステージが、基板搬送方向において前記第1の浮上領域の下流側に前記基板を浮かせるための多数の噴出口を設けた第3の浮上領域を有する、請求項23〜28のいずれか一項に記載の塗布装置。   The said levitation | floating stage has a 3rd levitation | floating area | region which provided many jet nozzles for floating the said board | substrate in the downstream of the said 1st levitation | floating area in a board | substrate conveyance direction. The coating apparatus as described in. 前記第3の浮上領域内に、前記基板を搬出するための搬出部が設けられる、請求項29に記載の塗布装置。   30. The coating apparatus according to claim 29, wherein an unloading unit for unloading the substrate is provided in the third floating region.
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