JP5113674B2 - Infrared detection sensor - Google Patents
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- JP5113674B2 JP5113674B2 JP2008221106A JP2008221106A JP5113674B2 JP 5113674 B2 JP5113674 B2 JP 5113674B2 JP 2008221106 A JP2008221106 A JP 2008221106A JP 2008221106 A JP2008221106 A JP 2008221106A JP 5113674 B2 JP5113674 B2 JP 5113674B2
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Description
本発明は、赤外線を熱に変換する赤外線吸収層を有し、該赤外線吸収層によって赤外線から変換された熱により気体が膨張することを用いて赤外線を検出する赤外線検出センサに関する。 The present invention relates to an infrared detection sensor that has an infrared absorption layer that converts infrared rays into heat, and detects infrared rays by using a gas that is expanded by heat converted from infrared rays by the infrared absorption layer.
前述の赤外線検出センサとして、特許文献１に記載の放射エネルギーを検出する装置が知られている。特許文献１に記載の装置は、内部に気体が存在する筒状の筐体と、筐体の一方側の開口部を閉塞するエネルギー吸収膜と、筐体の他方側の開口部を閉塞する薄膜とを備えている。 As the above-mentioned infrared detection sensor, a device for detecting radiant energy described in Patent Document 1 is known. The apparatus described in Patent Document 1 includes a cylindrical casing in which gas is present, an energy absorption film that closes an opening on one side of the casing, and a thin film that closes an opening on the other side of the casing. And.
特許文献１に記載の装置において、エネルギー吸収膜が赤外線等を吸収すると、赤外線等が熱に変換され、該熱により筐体の内部に存在する気体が昇温し、該気体の圧力が上昇する。気体の圧力が上昇すると、筐体の外側に向いた力が薄膜に加わり、筐体の外側へ押し出されるように薄膜が撓む。赤外線等の吸収によって薄膜が撓むため、特許文献１に記載の装置は、薄膜の撓み量に基づいて赤外線等を検出することが可能である。
ところで、赤外線検出センサには、小型化の要請が従来からある。特許文献１に記載の装置を小型化するためには、筐体の開口部及び薄膜の面積を小さくする必要がある。しかし、薄膜は、通常、筐体の他方の開口部を区画する部位全体において筐体に固着されている。このため、薄膜の面積を小さくすると、薄膜は撓み難くなり、赤外線を精度良く検出することができなくなる。よって、特許文献１に記載の装置を小型することは困難である。 Incidentally, there has been a demand for downsizing of the infrared detection sensor. In order to reduce the size of the device described in Patent Document 1, it is necessary to reduce the area of the opening of the housing and the thin film. However, the thin film is usually fixed to the casing in the entire region that defines the other opening of the casing. For this reason, if the area of the thin film is reduced, the thin film is difficult to bend and infrared rays cannot be detected with high accuracy. Therefore, it is difficult to reduce the size of the device described in Patent Document 1.
そこで、本発明は、赤外線を精度良く検出することができ、且つ、コンパクトな赤外線検出センサを提供する。 Therefore, the present invention provides a compact infrared detection sensor that can detect infrared rays with high accuracy.
本発明は、内部に気体が存在する筐体、前記筐体の内部に配置され吸収した赤外線を熱に変換する赤外線吸収層、及び、前記筐体に設けられ前記筐体の内部と外部とを連通させる開口部を具備する赤外線吸収部と、前記開口部の少なくとも一部を閉塞するように、一部のみが前記筐体に固着され、前記筐体への固着部を支点として撓むことが可能な片持ち梁部材又は両持ち梁部材とを備える赤外線検出センサであって、前記筐体は、赤外線を透過可能な入射部と、前記片持ち梁部材又は前記両持ち梁部材に対向する底面とを有し、前記赤外線吸収層は、前記入射部に対向して配置され、前記片持ち梁部材又は前記両持ち梁部材は、前記入射部に対し前記赤外線吸収層より下方に離間して位置し、前記赤外線吸収層に対して平行に設けられ、前記片持ち梁部材又は前記両持ち梁部材に設けられた第１電極と、前記第１電極に対向するように前記筐体の底面に設けられた第２電極と、前記第１電極と前記第２電極との間の静電容量に基づいて、前記片持ち梁部材又は前記両持ち梁部材の撓み量を検出する撓み量検出手段と、該撓み量検出手段が検出した撓み量に基づいて、赤外線を検出する赤外線検出手段とを更に備えることを特徴とする赤外線検出センサを提供する。 The present invention includes a housing in which gas is present, an infrared absorbing layer that is disposed inside the housing and converts absorbed infrared light into heat, and an inside and outside of the housing provided in the housing. Only a part of the infrared absorbing part having an opening to be communicated and the part fixed to the casing so as to close at least part of the opening, and the part fixed to the casing may be bent as a fulcrum. An infrared detection sensor comprising a possible cantilever member or a cantilever member , wherein the housing includes an incident portion capable of transmitting infrared rays, and a bottom surface facing the cantilever member or the cantilever member The infrared absorption layer is disposed to face the incident portion, and the cantilever member or the both-end supported beam member is positioned below the infrared absorption layer with respect to the incident portion. And provided in parallel to the infrared absorption layer, A first electrode provided on the cantilever member or the cantilever member; a second electrode provided on a bottom surface of the housing so as to face the first electrode; the first electrode and the second electrode; Deflection amount detecting means for detecting a bend amount of the cantilever member or the both-end supported beam member based on the capacitance between the electrodes, and an infrared ray based on the bend amount detected by the bend amount detection means. An infrared detection sensor is provided , further comprising an infrared detection means for detecting .
本発明に係る赤外線検出センサは、内部に気体が存在する筐体と、筐体の内部に配置され吸収した赤外線を熱に変換する赤外線吸収層とを具備する。赤外線吸収層の赤外線吸収量が増加すると、これに伴ない赤外線吸収層によって変換される熱量も増加する。赤外線吸収層によって変換される熱量が増加すると、筐体の内部に存在する気体が熱伝達によって昇温し、該気体の圧力が上昇することになる。
筐体には、筐体の内部と外部とを連通させる開口部が設けられている。この開口部は、片持ち梁部材又は両持ち梁部材によって少なくとも一部が閉塞されている。前述のように、筐体の内部に存在する気体の圧力が上昇すると、圧力が上昇した分だけ片持ち梁部材又は両持ち梁部材を筐体の外部に押圧する力が増加することになる。
片持ち梁部材及び両持ち梁部材は、一部のみが筐体に固着され、筐体への固着部を支点として撓むことが可能な構成とされている。このため、前述のように、筐体の内部に存在する気体の圧力が上昇して片持ち梁部材又は両持ち梁部材を筐体の外部に押圧する力が増加すると、片持ち梁部材又は両持ち梁部材は、筐体への固着部を支点として筐体の外部に向けて撓むことになる。
The infrared detection sensor according to the present invention includes a housing in which gas is present and an infrared absorption layer that is disposed inside the housing and converts absorbed infrared light into heat. When the infrared absorption amount of the infrared absorption layer increases, the amount of heat converted by the infrared absorption layer increases accordingly. When the amount of heat converted by the infrared absorption layer increases, the temperature of the gas existing inside the casing rises due to heat transfer, and the pressure of the gas increases.
The housing is provided with an opening that allows communication between the inside and the outside of the housing. The opening is at least partially closed by a cantilever member or a double-supported beam member. As described above, when the pressure of the gas existing inside the housing increases, the force that presses the cantilever member or both cantilever members to the outside of the housing increases by the amount of the increased pressure.
Only a part of the cantilever member and the double-supported beam member is fixed to the housing, and the cantilever member and the double-supported beam member can be bent using the fixing portion to the housing as a fulcrum. For this reason, as described above, when the pressure of the gas existing inside the casing rises and the force that presses the cantilever member or the cantilever member toward the outside of the casing increases, the cantilever member or both The cantilever member bends toward the outside of the casing with the fixing portion to the casing as a fulcrum.
一方、赤外線吸収層の赤外線吸収量が減少すると、これに伴ない赤外線吸収層によって変換される熱量も減少する。赤外線吸収層によって変換される熱量が減少すると、筐体の内部に存在する気体への熱伝達が減少することによって該気体が降温し、該気体の圧力が降下することになる。筐体の内部に存在する気体の圧力が降下すると、圧力が降下した分だけ片持ち梁部材又は両持ち梁部材を筐体の外部に押圧する力が減少することになる。片持ち梁部材又は両持ち梁部材を外部に押圧する力が減少すると、片持ち梁部材又は両持ち梁部材の撓み量が小さくなる。 On the other hand, when the infrared absorption amount of the infrared absorption layer is reduced, the amount of heat converted by the infrared absorption layer is also reduced. When the amount of heat converted by the infrared absorbing layer is reduced, the heat transfer to the gas existing inside the housing is reduced, whereby the temperature of the gas is lowered and the pressure of the gas is lowered. When the pressure of the gas existing inside the housing is lowered, the force for pressing the cantilever member or the both-end supported beam member to the outside of the housing is reduced by the amount of the pressure drop. When the force pressing the cantilever member or the cantilever member to the outside decreases, the amount of bending of the cantilever member or the cantilever member decreases.
このように、片持ち梁部材及び両持ち梁部材の撓み量は、赤外線吸収層の赤外線吸収量に応じて変化するので、片持ち梁部材及び両持ち梁部材の撓み量に基づいて、赤外線を検出すること（赤外線が赤外線吸収層に吸収されたか否かや、赤外線吸収層の赤外線吸収量を検出すること等）が可能である。 In this way, the amount of bending of the cantilever member and the cantilever member changes depending on the amount of infrared absorption of the infrared absorption layer, so that the infrared ray is generated based on the amount of bending of the cantilever member and the cantilever member. It is possible to detect (whether or not infrared rays are absorbed by the infrared absorption layer, or the amount of infrared rays absorbed by the infrared absorption layer).
仮に特許文献１に係る薄膜のように、本発明に係る片持ち梁部材を筐体の開口部を区画する部位全体において筐体に固着した場合と、本発明に係る片持ち梁部材とでは、それぞれの片持ち梁部材を筐体の外部に押圧する力が同じように変化したときの撓み量の変化は、本発明に係る片持ち梁部材の方が大きい。同様に、仮に特許文献１に係る薄膜のように、本発明に係る両持ち梁部材を筐体の開口部を区画する部位全体において筐体に固着した場合と、本発明に係る両持ち梁部材とでは、それぞれの両持ち梁部材を筐体の外部に押圧する力が同じように変化したときの撓み量の変化は、本発明に係る両持ち梁部材の方が大きい。換言すれば、赤外線吸収層の赤外線吸収量の変化に対する撓み量の変化は、本発明に係る片持ち梁部材及び両持ち梁部材の方が大きい。即ち、撓み量で検出できる赤外線吸収量の分解能は、本発明に係る片持ち梁部材及び両持ち梁部材の方が高い。よって、片持ち梁部材又は両持ち梁部材を備えた本発明に係る赤外線検出センサは、該片持ち梁部材又は該両持ち梁部材と同一面積の薄膜を備えた赤外線検出センサよりも赤外線を精度良く検出することができる。よって、本発明は、赤外線を精度良く検出すること可能であり、且つ、コンパクトな赤外線検出センサを提供することができる。また、赤外線検出センサがコンパクトであれば、赤外線検出センサの製造方法にはＭＥＭＳ（Micro Electro Mechanical Systems）技術を用いた製造方法が適する。ＭＥＭＳ技術を用いた製造方法によれば、１枚のウエハ上に多数の赤外線検出センサを同時に製作することができるので、赤外線検出センサを大量生産することが可能である。よって、本発明は、赤外線を精度良く検出すること可能であり、且つ、コンパクトであると共に、量産性に優れた赤外線検出センサを提供することができる。
また、第１電極と第２電極との間の静電容量は、第１電極と第２電極との距離に依存する。第１電極は片持ち梁部材又は両持ち梁部材に設けられ、第２電極は筐体に設けられているため、第１電極と第２電極との間の距離は片持ち梁部材又は両持ち梁部材の撓み量によって変動する。よって、第１電極と第２電極との間の静電容量に基づいて片持ち梁部材又は両持ち梁部材の撓み量を検出することができる。
さらに、上述のように、片持ち梁部材及び両持ち梁部材の撓み量は赤外線吸収層の赤外線吸収量に応じて変化するので、片持ち梁部材又は両持ち梁部材の撓み量に基づいて、赤外線吸収層の赤外線吸収量を検出することができる。
このように、第１電極と第２電極との間の静電容量に基づいて片持ち梁部材又は両持ち梁部材の撓み量を検出でき、片持ち梁部材又は両持ち梁部材の撓み量に基づいて赤外線吸収層の赤外線吸収量を検出できるため、片持ち梁部材又は両持ち梁部材の撓み量を検出し、検出した撓み量に基づいて赤外線を検出することができる。
As in the case of the thin film according to Patent Document 1, when the cantilever member according to the present invention is fixed to the housing in the entire region that defines the opening of the housing, and the cantilever member according to the present invention, The cantilever member according to the present invention has a greater change in the amount of bending when the force that presses each cantilever member to the outside of the housing changes in the same manner. Similarly, as in the case of the thin film according to Patent Document 1, the case where the doubly supported beam member according to the present invention is fixed to the casing in the entire region that defines the opening of the casing, and the cantilever member according to the present invention Then, the change in the amount of deflection when the force for pressing the both cantilever members to the outside of the housing changes in the same way is larger in the both-end supported beam members according to the present invention. In other words, the change in the amount of bending with respect to the change in the infrared absorption amount of the infrared absorption layer is larger in the cantilever member and the both-end beam member according to the present invention. That is, the resolution of the infrared absorption amount that can be detected by the deflection amount is higher for the cantilever member and the both-end beam member according to the present invention. Therefore, the infrared detection sensor according to the present invention including the cantilever member or the cantilever member is more accurate than the infrared detection sensor including the thin film having the same area as the cantilever member or the both cantilever member. It can be detected well. Therefore, the present invention can detect infrared rays with high accuracy and provide a compact infrared detection sensor. If the infrared detection sensor is compact, a manufacturing method using MEMS (Micro Electro Mechanical Systems) technology is suitable for the manufacturing method of the infrared detection sensor. According to the manufacturing method using the MEMS technology, since a large number of infrared detection sensors can be simultaneously manufactured on one wafer, the infrared detection sensors can be mass-produced. Therefore, the present invention can provide an infrared detection sensor that can detect infrared rays with high accuracy and is compact and excellent in mass productivity.
Further, the capacitance between the first electrode and the second electrode depends on the distance between the first electrode and the second electrode. Since the first electrode is provided on the cantilever member or the cantilever member, and the second electrode is provided on the housing, the distance between the first electrode and the second electrode is determined by the cantilever member or the cantilever member. It varies depending on the amount of deflection of the beam member. Therefore, the deflection amount of the cantilever member or the cantilever member can be detected based on the capacitance between the first electrode and the second electrode.
In addition, as described above, the amount of bending of the cantilever member and the both-sided beam member changes according to the amount of infrared absorption of the infrared absorption layer, so based on the amount of bending of the cantilever member or the cantilever member, The infrared absorption amount of the infrared absorption layer can be detected.
In this way, the amount of bending of the cantilever member or the cantilever member can be detected based on the capacitance between the first electrode and the second electrode, and the amount of bending of the cantilever member or the cantilever member can be detected. Since the infrared absorption amount of the infrared absorption layer can be detected based on this, it is possible to detect the amount of bending of the cantilever member or the cantilever member, and to detect infrared rays based on the detected amount of bending.
好ましくは、前記赤外線検出センサは、前記赤外線吸収部と前記片持ち梁部材又は前記両持ち梁部材とを複数備えることが好ましい。 Preferably, the infrared detection sensor includes a plurality of the infrared absorbing portions and the cantilever member or the both-end supported beam members.
かかる赤外線検出センサにおける各赤外線吸収部の赤外線吸収層に波長の異なる赤外線を吸収させることで、波長の異なる複数の赤外線を検出することができる。よって、かかる赤外線検出センサは、波長の異なる赤外線を検出することによってガスの成分を分析するガス分析等に好適である。 A plurality of infrared rays having different wavelengths can be detected by causing the infrared absorption layer of each infrared absorption portion in the infrared detection sensor to absorb infrared rays having different wavelengths. Therefore, the infrared detection sensor is suitable for gas analysis that analyzes gas components by detecting infrared rays having different wavelengths.
好ましくは、前記片持ち梁部材又は前記両持ち梁部材は、厚みが５００ｎｍ以下であるシリコンで形成される構成とされる。 Preferably, the cantilever member or the cantilever member is made of silicon having a thickness of 500 nm or less.
このような構成にすることで、片持ち梁部材又は前記両持ち梁部材が非常に撓み易くなり、赤外線吸収層の赤外線吸収量に対する片持ち梁部材又は前記両持ち梁部材の撓み量の変化が大きくなり、ひいては、片持ち梁部材又は前記両持ち梁部材の撓み量で検出できる赤外線吸収層の赤外線吸収量の分解能が高くなる。よって、かかる好ましい構成によれば、赤外線をより精度良く検出することができる。 With such a configuration, the cantilever member or the cantilever member is very easy to bend, and the change in the amount of bending of the cantilever member or the cantilever member with respect to the infrared absorption amount of the infrared absorption layer is changed. As a result, the resolution of the infrared absorption amount of the infrared absorption layer that can be detected by the deflection amount of the cantilever member or the both-end support member is increased. Therefore, according to such a preferable configuration, infrared rays can be detected with higher accuracy.
好ましくは、赤外線検出センサは、前記赤外線吸収部と前記片持ち梁部材又は前記両持ち梁部材と一体的に形成され、前記赤外線吸収層に赤外線を断続的に入射させるチョッパを備えることができる。 Preferably, the infrared detection sensor may include a chopper that is integrally formed with the infrared absorbing portion and the cantilever member or the both-end supported beam member and that makes infrared rays incident on the infrared absorbing layer intermittently.
チョッパを備えることで、赤外線吸収層に赤外線が入射する度に、赤外線の検出をすることができる。 By providing the chopper, infrared rays can be detected each time the infrared rays are incident on the infrared absorption layer.
本発明は、赤外線を精度良く検出することができ、且つ、コンパクトな赤外線検出センサを提供することができる。 The present invention can detect infrared rays with high accuracy and provide a compact infrared detection sensor.
図１は、本実施形態に係る赤外線検出センサ１の模式図である。図１に示すように、赤外線検出センサ１は、赤外線吸収部２と片持ち梁部材３と備える。 FIG. 1 is a schematic diagram of an infrared detection sensor 1 according to the present embodiment. As shown in FIG. 1, the infrared detection sensor 1 includes an infrared absorption unit 2 and a cantilever member 3.
赤外線吸収部２は、内部に気体が存在する筐体２１と、筐体２１の内部に配置された赤外線吸収層２２と、筐体２１に設けられ該筐体２１の内部と外部とを連通させる開口部２３とを具備する。 The infrared absorption unit 2 communicates the housing 21 in which gas exists, the infrared absorption layer 22 disposed inside the housing 21, and the inside of the housing 21 and the outside provided in the housing 21. And an opening 23.
筐体２１の材質は、特に限定されないが、赤外線ＩＲを透過するシリコン等とすることができる。筐体２１は、外部から赤外線ＩＲを通過させて筐体２１の内部に赤外線ＩＲを入射させる入射部２１ａを有し、入射部２１ａの周囲の外面は赤外線ＩＲが透過できない遮光膜４で覆われている。 Although the material of the housing | casing 21 is not specifically limited, It can be set as the silicon | silicone etc. which permeate | transmit infrared IR. The casing 21 has an incident part 21a that allows infrared IR to pass through from the outside and makes the infrared IR incident inside the casing 21, and the outer surface around the incident part 21a is covered with a light-shielding film 4 that does not allow infrared IR to pass through. ing.
赤外線吸収層２２は、筐体２１の入射部２１ａを通過して、筐体２１の内部に入射した赤外線ＩＲを吸収する。赤外線吸収層２２は、吸収した赤外線ＩＲを熱に変換する。 The infrared absorption layer 22 absorbs infrared IR that has passed through the incident portion 21 a of the casing 21 and entered the casing 21. The infrared absorbing layer 22 converts the absorbed infrared IR into heat.
開口部２３は、筐体２１の入射部２１ａ以外の部位に形成されている。図１に示すように、例えば、開口部２３は、入射部２１ａ以外の部位であって、入射部２１ａと対向しない部位に形成することができる。開口部２３によって筐体２１の内部と連通する筐体２１の外部は、筐体２１及び第２筐体２５によって区画された空間部２４である。第２筐体２５は、赤外線ＩＲを透過するシリコン等で形成されている。第２筐体２５の外面は、遮光膜４で覆われている。尚、第２筐体２５は、筐体２１と一体的に形成することが可能である。開口部２３の形状は特に限定されるものでない。図２は、図１の矢印Ｘ方向から見た赤外線検出センサ１の開口部２３及び片持ち梁部材３の平面図を示す。図２に示すように、開口部２３は、例えば、矩形状に形成することができる。 The opening 23 is formed in a part other than the incident part 21 a of the housing 21. As shown in FIG. 1, for example, the opening 23 can be formed in a part other than the incident part 21 a and not opposed to the incident part 21 a. The outside of the housing 21 that communicates with the inside of the housing 21 through the opening 23 is a space 24 that is partitioned by the housing 21 and the second housing 25. The second casing 25 is formed of silicon or the like that transmits infrared IR. The outer surface of the second housing 25 is covered with the light shielding film 4. The second casing 25 can be formed integrally with the casing 21. The shape of the opening 23 is not particularly limited. FIG. 2 shows a plan view of the opening 23 and the cantilever member 3 of the infrared detection sensor 1 as seen from the direction of the arrow X in FIG. As shown in FIG. 2, the opening 23 can be formed in a rectangular shape, for example.
片持ち梁部材３は、一部が筐体２１に固着されている。具体的には、片持ち梁部材３は、所定方向の一方側の部位においてのみ筐体２１に固着されている。片持ち梁部材３の筐体２１に固着される部位（以下、「固着部」という）は、片持ち梁部材３のうち、開口部２３の所定方向の他方側の端部よりも、該所定方向の一方側に存在する部位である。例えば、図２に示すように、所定方向を図２の矢印Ｙ方向（紙面に沿った上下方向）とし、所定方向の他方側を紙面に沿った上方側とすれば、片持ち梁部材３の固着部は、開口部２３の上端部よりも下方側に存在する部位である。例えば、図２に示すように、片持ち梁部材３の形状が平面視矩形状である場合は、片持ち梁部材３の固着部は、片持ち梁部材３の下方を形成する一辺部３１とすることができる。 A part of the cantilever member 3 is fixed to the housing 21. Specifically, the cantilever member 3 is fixed to the housing 21 only at one site in a predetermined direction. The portion of the cantilever member 3 that is fixed to the casing 21 (hereinafter referred to as “fixed portion”) is more than the predetermined end of the cantilever member 3 on the other side in the predetermined direction of the opening 23. It is a site that exists on one side of the direction. For example, as shown in FIG. 2, if the predetermined direction is the arrow Y direction in FIG. 2 (up and down direction along the paper surface) and the other side of the predetermined direction is the upper side along the paper surface, the cantilever member 3 The fixing portion is a portion that is present below the upper end portion of the opening 23. For example, as shown in FIG. 2, when the shape of the cantilever member 3 is a rectangular shape in plan view, the fixing portion of the cantilever member 3 includes one side portion 31 that forms the lower side of the cantilever member 3. can do.
この片持ち梁部材３は、開口部２３の少なくとも一部を閉塞している。図２に示す片持ち梁部材３においては、開口部２３の一部、即ち、開口部２３のうち、片持ち梁部材３の周囲のコの字状の部位以外の部位を閉塞している。 The cantilever member 3 closes at least a part of the opening 23. In the cantilever member 3 shown in FIG. 2, a part of the opening 23, that is, a part other than the U-shaped part around the cantilever member 3 in the opening 23 is closed.
図１の一点鎖線で示すように、片持ち梁部材３は、筐体２１の内部に存在する気体の圧力に応じて、筐体２１への固着部を支点として撓む。即ち、図２に示す片持ち梁部材３では、一辺部３１を支点として撓む。具体的には、赤外線吸収層２２の赤外線吸収量が増加すると、これに伴ない赤外線吸収層２２によって変換される熱量も増加する。赤外線吸収層２２によって変換される熱量が増加すると、筐体２１の内部に存在する気体が熱伝達によって昇温し、該気体の圧力が上昇することになる。筐体２１の内部に存在する気体の圧力が上昇すると、圧力が上昇した分だけ片持ち梁部材３を筐体２１の外部に押圧する力が増加することになる。筐体２１の内部に存在する気体の圧力が上昇して片持ち梁部材３を筐体２１の外部に押圧する力が増加すると、片持ち梁部材３は、一辺部３１を支点として筐体２１の外部に向けて撓むことになる。このように、赤外線吸収層２２の赤外線吸収量が増加すると、片持ち梁部材３の撓み量Ｒ１（図１参照）が大きくなる。 As shown by the alternate long and short dash line in FIG. 1, the cantilever member 3 bends with the fixing portion to the housing 21 as a fulcrum according to the pressure of the gas existing inside the housing 21. That is, the cantilever member 3 shown in FIG. 2 bends with the one side 31 as a fulcrum. Specifically, when the infrared absorption amount of the infrared absorption layer 22 increases, the amount of heat converted by the infrared absorption layer 22 increases accordingly. When the amount of heat converted by the infrared absorption layer 22 increases, the temperature of the gas existing inside the casing 21 is raised by heat transfer, and the pressure of the gas increases. When the pressure of the gas existing inside the housing 21 increases, the force that presses the cantilever member 3 to the outside of the housing 21 increases by the amount of the increased pressure. When the pressure of the gas existing inside the casing 21 rises and the force for pressing the cantilever member 3 to the outside of the casing 21 increases, the cantilever member 3 has the one side 31 as a fulcrum. It will bend toward the outside of the. Thus, when the infrared absorption amount of the infrared absorption layer 22 increases, the deflection amount R1 (see FIG. 1) of the cantilever member 3 increases.
一方、赤外線吸収層２２の赤外線吸収量が減少すると、これに伴ない赤外線吸収層２２によって変換される熱量も減少する。赤外線吸収層２２によって変換される熱量が減少すると、筐体２１の内部に存在する気体への熱伝達が減少することによって該気体が降温し、該気体の圧力が降下することになる。筐体２１の内部に存在する気体の圧力が降下すると、圧力が降下した分だけ片持ち梁部材３を筐体２１の外部に押圧する力が減少することになる。片持ち梁部材３を外部に押圧する力が減少すると、片持ち梁部材３の撓み量が小さくなる。 On the other hand, when the infrared absorption amount of the infrared absorption layer 22 decreases, the amount of heat converted by the infrared absorption layer 22 decreases accordingly. When the amount of heat converted by the infrared absorption layer 22 decreases, the heat transfer to the gas existing inside the housing 21 decreases, so that the temperature of the gas decreases and the pressure of the gas decreases. When the pressure of the gas existing inside the housing 21 drops, the force that presses the cantilever member 3 to the outside of the housing 21 is reduced by the amount of the pressure drop. When the force that presses the cantilever member 3 outward decreases, the amount of bending of the cantilever member 3 decreases.
このように、赤外線吸収層２２の赤外線吸収量に応じて片持ち梁部材３の撓み量Ｒ１が変化する。よって、片持ち梁部材３の撓み量Ｒ１に基づいて赤外線ＩＲを検出すること（赤外線ＩＲが赤外線吸収層２２に吸収されたか否かや、赤外線吸収層２２の赤外線吸収量を検出すること等）が可能である。 Thus, the amount of bending R1 of the cantilever member 3 changes according to the infrared absorption amount of the infrared absorption layer 22. Therefore, infrared IR is detected based on the bending amount R1 of the cantilever member 3 (whether the infrared IR is absorbed by the infrared absorption layer 22, or the infrared absorption amount of the infrared absorption layer 22 is detected). Is possible.
尚、好ましくは、片持ち梁部材３の厚みは、５００ｎｍ以下とされる。このような厚みであれば、片持ち梁部材３が非常に撓み易く、赤外線吸収層２２の赤外線吸収量に対する片持ち梁部材３の撓み量Ｒ１の変化が大きくなり易い。赤外線吸収層２２の赤外線吸収量の変化に対する片持ち部材の撓み量Ｒ１の変化が大きければ大きいほど、赤外線吸収層２２の赤外線吸収量の分解能が高くなり、赤外線ＩＲを精度良く検出することができる。よって、片持ち梁部材３の厚みを５００ｎｍ以下とすれば、赤外線ＩＲの検出を精度良く行うことができる。尚、片持ち梁部材３の材質は、特に限定されないが、シリコン等とすることができる。 In addition, Preferably, the thickness of the cantilever member 3 is 500 nm or less. With such a thickness, the cantilever member 3 is very easy to bend, and the change in the bend amount R1 of the cantilever member 3 with respect to the infrared absorption amount of the infrared absorption layer 22 tends to be large. The greater the change in the amount of bending R1 of the cantilever member with respect to the change in the infrared absorption amount of the infrared absorption layer 22, the higher the resolution of the infrared absorption amount of the infrared absorption layer 22, and the infrared IR can be accurately detected. . Therefore, if the thickness of the cantilever member 3 is 500 nm or less, infrared IR can be detected with high accuracy. The material of the cantilever member 3 is not particularly limited, but can be silicon or the like.
図１に示すように、本実施形態に係る赤外線検出センサ１は、赤外線吸収部２及び片持ち梁部材３の他、片持ち梁部材３の撓み量Ｒ１を検出する撓み量検出手段７３と、撓み量検出手段７３が検出した撓み量Ｒ１に基づいて、赤外線ＩＲを検出する赤外線検出手段７４とを備える。 As shown in FIG. 1, the infrared detection sensor 1 according to the present embodiment includes a deflection amount detection unit 73 that detects a deflection amount R1 of the cantilever member 3 in addition to the infrared absorption unit 2 and the cantilever member 3; Infrared detection means 74 for detecting infrared IR based on the deflection amount R1 detected by the deflection amount detection means 73 is provided.
撓み量検出手段７３は、例えば、片持ち梁部材３に設けられた第１電極７１（図１参照）と、第１電極７１に対向するように筐体２１に設けられた第２電極７２（図１参照）との間の静電容量に基づいて、片持ち梁部材３の撓み量Ｒ１を検出する構成とすることができる。 The deflection amount detecting means 73 includes, for example, a first electrode 71 (see FIG. 1) provided on the cantilever member 3 and a second electrode 72 (provided on the casing 21 so as to face the first electrode 71). It can be set as the structure which detects the bending amount R1 of the cantilever member 3 based on the electrostatic capacitance between (refer FIG. 1).
第１電極７１は、片持ち梁部材３の撓み方向（片持ち梁部材３の厚み方向）に法線方向が略直交する面状に形成することができる。第１電極７１が設けられる片持ち梁部材３の部位は、例えば、片持ち梁部材３の内面（筐体２１の内部に面する面）とすることができる。第２電極７２は、片持ち梁部材３の撓み方向に法線方向が略直交する面状に形成することができる。第２電極７２が設けられる筐体２１の部位は、例えば、筐体２１の内面（筐体２１の内部に面する面）であって、且つ、片持ち梁部材３の撓み方向に第１電極７１と対向する部位とすることができる。 The first electrode 71 can be formed in a planar shape whose normal direction is substantially orthogonal to the bending direction of the cantilever member 3 (the thickness direction of the cantilever member 3). The part of the cantilever member 3 on which the first electrode 71 is provided can be, for example, the inner surface of the cantilever member 3 (the surface facing the inside of the housing 21). The second electrode 72 can be formed in a planar shape whose normal direction is substantially orthogonal to the bending direction of the cantilever member 3. The part of the housing 21 where the second electrode 72 is provided is, for example, the inner surface of the housing 21 (the surface facing the inside of the housing 21) and the first electrode in the bending direction of the cantilever member 3. It can be a part facing 71.
第１電極７１と第２電極７２との間の静電容量は第１電極７１と第２電極７２との距離に依存し、この距離は片持ち梁部材の撓み量Ｒ１によって変動する。よって、第１電極７１と第２電極７２との間の静電容量から片持ち梁部材３の撓み量Ｒ１を検出することができる The capacitance between the first electrode 71 and the second electrode 72 depends on the distance between the first electrode 71 and the second electrode 72, and this distance varies depending on the deflection amount R1 of the cantilever member. Therefore, the deflection amount R1 of the cantilever member 3 can be detected from the capacitance between the first electrode 71 and the second electrode 72.
赤外線検出手段７４は、上述のように、撓み量検出手段７３が検出した撓み量Ｒ１に基づいて、赤外線ＩＲを検出する。片持ち梁部材３の撓み量Ｒ１は赤外線吸収層２２の赤外線吸収量に応じて変化するので、撓み量検出手段７３が検出した片持ち梁部材３の撓み量Ｒ１に基づいて、赤外線吸収層２２の赤外線吸収量を検出することができる。片持ち梁部材３の撓み量Ｒ１に基づく赤外線吸収層２２の赤外線吸収量の検出は、例えば、赤外線吸収層２２の赤外線吸収量と片持ち梁部材３の撓み量Ｒ１との関係を示す関数を赤外線検出手段７４に記憶させ、該関数を赤外線検出手段７４が用いることで行うことができる。赤外線吸収層２２の赤外線吸収量と片持ち梁部材３の撓み量Ｒ１との関係を示す関数は、例えば、赤外線吸収層２２の赤外線吸収量を変化させながら片持ち梁部材３の撓み量Ｒ１を実測することで求めることができる。 As described above, the infrared detection means 74 detects the infrared IR based on the deflection amount R1 detected by the deflection amount detection means 73. Since the deflection amount R1 of the cantilever member 3 changes according to the infrared absorption amount of the infrared absorption layer 22, the infrared absorption layer 22 is based on the deflection amount R1 of the cantilever member 3 detected by the deflection amount detection means 73. The amount of infrared absorption can be detected. The detection of the infrared absorption amount of the infrared absorption layer 22 based on the deflection amount R1 of the cantilever member 3 is, for example, a function indicating the relationship between the infrared absorption amount of the infrared absorption layer 22 and the deflection amount R1 of the cantilever member 3. The function can be performed by storing the function in the infrared detection means 74 and using the function by the infrared detection means 74. The function indicating the relationship between the infrared absorption amount of the infrared absorption layer 22 and the bending amount R1 of the cantilever member 3 is, for example, the bending amount R1 of the cantilever member 3 while changing the infrared absorption amount of the infrared absorption layer 22. It can be obtained by actual measurement.
尚、赤外線件検出手段７４は、片持ち梁部材３の撓み量Ｒ１に基づいて、赤外線吸収層２２に赤外線ＩＲが吸収されたか否かを検出してもよい。赤外線ＩＲが赤外線吸収層２２に吸収されたか否かは、撓み量検出手段７３が検出した片持ち梁部材３の撓み量Ｒ１が所定のしきい値を超えるか否かに基づいて検出することができる。このしきい値は、例えば、所定強度の赤外線ＩＲが赤外線吸収層２２に吸収されたときの片持ち梁部材３の撓み量Ｒ１を予め実測し、実測により得られた片持ち梁部材３の撓み量Ｒ１に基づいて決定することができる。 The infrared matter detection means 74 may detect whether or not the infrared IR is absorbed by the infrared absorption layer 22 based on the deflection amount R1 of the cantilever member 3. Whether or not the infrared IR is absorbed by the infrared absorption layer 22 can be detected based on whether or not the bending amount R1 of the cantilever member 3 detected by the bending amount detection means 73 exceeds a predetermined threshold value. it can. For example, the threshold value is obtained by measuring in advance the bending amount R1 of the cantilever member 3 when the infrared ray IR having a predetermined intensity is absorbed by the infrared absorption layer 22, and the bending of the cantilever member 3 obtained by actual measurement. It can be determined based on the quantity R1.
更に、図１に示すように、本実施形態に係る赤外線検出センサ１は、赤外線フィルタ５と、チョッパ６とを備える。 Furthermore, as shown in FIG. 1, the infrared detection sensor 1 according to the present embodiment includes an infrared filter 5 and a chopper 6.
赤外線フィルタ５は、筐体２１の外部に配置され、筐体２１の入射部２１ａに入射させる赤外線ＩＲの種類を限定する。このように、入射部２１ａに入射する赤外線ＩＲの種類が限定されることにより、本実施形態に係る赤外線検出センサ１は、特定の波長の赤外線ＩＲのみを検出することが可能とされている。 The infrared filter 5 is disposed outside the housing 21 and limits the type of infrared IR that is incident on the incident portion 21 a of the housing 21. Thus, by limiting the type of infrared IR incident on the incident portion 21a, the infrared detection sensor 1 according to the present embodiment can detect only the infrared IR having a specific wavelength.
チョッパ６は、筐体２１の入射部２１ａに赤外線ＩＲを断続的に入射させる。チョッパ６は、回転可能に支持された赤外線を透過しない遮光部６１を備える。遮光部６１は、回転方向（図１の矢印Ｙ方向）に沿って厚み方向に貫通する貫通孔６１が複数設けられている。遮光部６１は、モータ等によって回転駆動され、遮光部６１が回転することで、赤外線ＩＲが貫通孔６２を通過したり、遮光部６１で遮光されたりする。このように、赤外線ＩＲが貫通孔６２を通過したり、遮光部６１で遮光されたりすることで、赤外線吸収層２２における赤外線ＩＲの吸収が断続的に行われる。このように、チョッパ６を備えることで、赤外線ＩＲが貫通孔６２を通過する度に、赤外線ＩＲの検出をすることができる。 The chopper 6 makes the infrared IR incident on the incident portion 21 a of the housing 21 intermittently. The chopper 6 includes a light shielding portion 61 that is rotatably supported and does not transmit infrared rays. The light shielding portion 61 is provided with a plurality of through holes 61 that penetrate in the thickness direction along the rotation direction (the arrow Y direction in FIG. 1). The light shielding unit 61 is rotationally driven by a motor or the like, and the infrared light IR passes through the through hole 62 or is shielded by the light shielding unit 61 as the light shielding unit 61 rotates. As described above, the infrared IR is intermittently absorbed in the infrared absorption layer 22 by the infrared IR passing through the through hole 62 or being shielded by the light shielding portion 61. Thus, by providing the chopper 6, the infrared IR can be detected every time the infrared IR passes through the through hole 62.
次に、図２に示すような矩形状の片持ち梁部材３で開口部２３の一部（例えば、上述のように、片持ち梁部材３の周囲のコの字状の部位以外の部位）を閉塞した場合の片持ち梁部材３の撓み量Ｒ１と、図３（ａ）に示すように、筐体２１の開口部２３を区画する部位２１ｂ全体において筐体２１に固着された薄膜２６で開口部２３全体を閉塞した場合の薄膜２６の撓み量Ｒ２（図３（ｂ）参照）とについて説明する。尚、図２に示すように、片持ち梁部材３の縦方向寸法Ｌ１は０．２３ｍｍであり、横方向寸法Ｗ１は０．１ｍｍであり、面積は０．０２３ｍｍ２である。一方、図３（ａ）に示すように、薄膜２６の縦方向寸法Ｌ２及び横方向寸法Ｗ２は共に０．５ｍｍであり、面積は０．２５ｍｍ２である。 Next, a part of the opening 23 in the rectangular cantilever member 3 as shown in FIG. 2 (for example, a part other than the U-shaped part around the cantilever member 3 as described above). The amount of bending R1 of the cantilever member 3 when the tube is closed and the thin film 26 fixed to the housing 21 in the entire portion 21b that partitions the opening 23 of the housing 21 as shown in FIG. The amount of bending R2 (see FIG. 3B) of the thin film 26 when the entire opening 23 is closed will be described. In addition, as shown in FIG. 2, the vertical dimension L1 of the cantilever member 3 is 0.23 mm, the horizontal dimension W1 is 0.1 mm, and the area is 0.023 mm 2 . On the other hand, as shown in FIG. 3A, the longitudinal dimension L2 and the lateral dimension W2 of the thin film 26 are both 0.5 mm and the area is 0.25 mm 2 .
図４は、赤外線ＩＲを１０秒間赤外線吸収層２２に吸収させた場合における、赤外線ＩＲ吸収時の１０秒間及びその後の片持ち梁部材３の撓み量Ｒ１と薄膜２６の撓み量Ｒ２とを示す。図４（ａ）は片持ち梁部材３の撓み量Ｒ１を示し、図４（ｂ）は薄膜２６の撓み量Ｒ２を示す。尚、ここでは、赤外線ＩＲの光源として、供給する電力に応じて出射する赤外線ＩＲの強度を変化させる光源を用いた。図４（ａ）及び（ｂ）に示すように、光源に供給する電力を１．６ｍＷとした場合、片持ち梁部材３の最大撓み量Ｒ１は約１．４μｍと、薄膜２６の最大撓み量Ｒ２は約０．７μｍとみなすことができる。光源に供給する電力を１．０ｍＷとした場合、片持ち梁部材３の最大撓み量Ｒ１は約０．９μｍと、薄膜２６の最大撓み量Ｒ２は約０．４μｍとみなすことができる。光源に供給する電力を０．４ｍＷとした場合、片持ち梁部材３の最大撓み量Ｒ１は約０．５μｍと、薄膜２６の最大撓み量Ｒ２は約０．２５μｍとみなすことができる。 FIG. 4 shows the bending amount R1 of the cantilever member 3 and the bending amount R2 of the thin film 26 for 10 seconds and after that when absorbing the infrared IR in the infrared absorption layer 22 for 10 seconds. 4A shows the deflection amount R1 of the cantilever member 3, and FIG. 4B shows the deflection amount R2 of the thin film 26. FIG. Here, as the light source of the infrared IR, a light source that changes the intensity of the infrared IR emitted according to the supplied power is used. As shown in FIGS. 4A and 4B, when the power supplied to the light source is 1.6 mW, the maximum deflection R1 of the cantilever member 3 is about 1.4 μm, and the maximum deflection of the thin film 26. R2 can be considered to be about 0.7 μm. When the power supplied to the light source is 1.0 mW, the maximum deflection amount R1 of the cantilever member 3 can be regarded as about 0.9 μm, and the maximum deflection amount R2 of the thin film 26 can be regarded as about 0.4 μm. When the power supplied to the light source is 0.4 mW, the maximum deflection amount R1 of the cantilever member 3 can be regarded as about 0.5 μm, and the maximum deflection amount R2 of the thin film 26 can be regarded as about 0.25 μm.
以上のように、赤外線吸収層２２の赤外線吸収量の変化に対する撓み量の変化は、薄膜２６よりも片持ち梁部材３の方が大きい。赤外線吸収層２２の赤外線吸収量の変化に対する撓み量の変化が大きければ大きいほど、撓み量で検出できる赤外線吸収層２２の赤外線吸収量の分解能が高くなり、赤外線ＩＲを精度良く検出することができる。よって、片持ち梁部材３を用いた本実施形態に係る赤外線検出センサ１は、赤外線ＩＲを精度良く検出することができる。また、片持ち梁部材３は、面積（０．０２３ｍｍ２）が薄膜２６の面積（０．２５ｍｍ２）より小さいにもかかわらず、最大撓み量Ｒ１は薄膜２６の最大撓み量Ｒ２よりも大きい。よって、本実施形態に係る赤外線検出センサ１は、赤外線ＩＲを精度良く検出することができるとともに、コンパクトにすることができる。また、赤外線検出センサ１がコンパクトであれば、赤外線検出センサ１の製造方法にはＭＥＭＳ技術を用いた製造方法が適する。ＭＥＭＳ技術を用いた製造方法によれば、１枚のウエハ上に多数の赤外線検出センサ１を同時に製作することができるので、赤外線検出センサ１を大量生産することが可能である。よって、本実施形態に係る赤外線検出センサ１は、量産性に優れる。 As described above, the change in the amount of bending with respect to the change in the infrared absorption amount of the infrared absorption layer 22 is greater in the cantilever member 3 than in the thin film 26. The greater the change in the amount of deflection with respect to the change in the amount of infrared absorption of the infrared absorption layer 22, the higher the resolution of the infrared absorption amount of the infrared absorption layer 22 that can be detected by the amount of deflection, and the infrared IR can be detected accurately. . Therefore, the infrared detection sensor 1 according to the present embodiment using the cantilever member 3 can detect the infrared IR with high accuracy. Further, the cantilever member 3 has an area (0.023 mm 2) is the area of the thin film 26 (0.25 mm 2) Despite the smaller, the maximum deflection amount R1 is greater than the maximum deflection amount R2 of the thin film 26. Therefore, the infrared detection sensor 1 according to the present embodiment can detect the infrared IR with high accuracy and can be made compact. If the infrared detection sensor 1 is compact, a manufacturing method using the MEMS technology is suitable for the manufacturing method of the infrared detection sensor 1. According to the manufacturing method using the MEMS technology, since a large number of infrared detection sensors 1 can be simultaneously manufactured on one wafer, the infrared detection sensors 1 can be mass-produced. Therefore, the infrared detection sensor 1 according to the present embodiment is excellent in mass productivity.
また、本実施形態においては、開口部２３及び片持ち梁部材３が筐体２１の入射部２１ａと対向する部位以外の部位に配置されている。このため、赤外線吸収層２２を透過した赤外線ＩＲが片持ち梁部材３に照射されることを防ぐことができる。このため、赤外線ＩＲの照射により片持ち梁部材３の温度が上昇して、片持ち梁部材３の剛性が小さくなり、赤外線吸収量と撓み量Ｒ１との関係が変化し、赤外線の検出が正確に行えなくなることを防止することができる。 Further, in the present embodiment, the opening 23 and the cantilever member 3 are disposed at a portion other than the portion facing the incident portion 21 a of the housing 21. For this reason, it is possible to prevent the cantilever member 3 from being irradiated with the infrared IR transmitted through the infrared absorption layer 22. For this reason, the temperature of the cantilever member 3 rises due to the infrared IR irradiation, the rigidity of the cantilever member 3 decreases, the relationship between the infrared absorption amount and the deflection amount R1 changes, and the infrared detection is accurate. Can be prevented.
また、赤外線検出センサ１Ａは、以上のような赤外線吸収部２と片持ち梁部材３とをそれぞれ複数配列させた構成とすることも可能である。図５は、赤外線吸収部２と片持ち梁部材３とをそれぞれ複数配列させた赤外線検出センサ１Ａの平面図である。赤外線フィルタ５等によって、赤外線検出センサ１Ａにおける各赤外線吸収部２の赤外線吸収層２２に波長の異なる赤外線ＩＲを吸収させることで、赤外線検出センサ１Ａは、波長の異なる複数の赤外線ＩＲを検出することができる。よって、かかる赤外線検出センサ１Ａは、波長の異なる赤外線ＩＲを検出することによってガスの成分を分析するガス分析等に好適である。 In addition, the infrared detection sensor 1A may have a configuration in which a plurality of infrared absorbing portions 2 and cantilever members 3 as described above are arranged. FIG. 5 is a plan view of an infrared detection sensor 1A in which a plurality of infrared absorbing portions 2 and cantilever members 3 are arranged. The infrared detection sensor 1A detects a plurality of infrared IRs having different wavelengths by causing the infrared absorption layer 22 of each infrared absorption part 2 in the infrared detection sensor 1A to absorb infrared IRs having different wavelengths by the infrared filter 5 or the like. Can do. Therefore, the infrared detection sensor 1A is suitable for gas analysis or the like for analyzing gas components by detecting infrared IR having different wavelengths.
また、図５に示すように、赤外線検出センサ１Ａにおいて、赤外線吸収部２及び片持ち梁部材３を一方向に複数配列させた構成とする場合、赤外線吸収部２の開口部２３及び片持ち梁部材３が千鳥状となるように配列してもよい。片持ち梁部材３の面積が大きいほど、撓み量Ｒ１が大きくなり易く、撓み量Ｒ１が大きければ、赤外線ＩＲを精度良く検出することができる。よって、赤外線ＩＲを精度良く検出する観点から、開口部２３及び片持ち梁部材３は、幅を大きくすることが好ましい。開口部２３及び片持ち梁部材３を千鳥状に配置することで、一方向に開口部２３及び片持ち梁部材３が連続することがなく、開口部２３及び片持ち梁部材３の面積を大きくしつつ、赤外線検出センサ１Ａが大型化することを抑えることができる。 As shown in FIG. 5, in the infrared detection sensor 1 </ b> A, when a plurality of infrared absorbing portions 2 and cantilever members 3 are arranged in one direction, the openings 23 and cantilevers of the infrared absorbing portion 2 are arranged. The members 3 may be arranged in a zigzag pattern. As the area of the cantilever member 3 is larger, the amount of bending R1 is likely to increase. If the amount of bending R1 is large, the infrared IR can be detected with high accuracy. Therefore, from the viewpoint of detecting infrared IR with high accuracy, it is preferable that the opening 23 and the cantilever member 3 have a large width. By arranging the openings 23 and the cantilever members 3 in a staggered manner, the openings 23 and the cantilever members 3 do not continue in one direction, and the areas of the openings 23 and the cantilever members 3 are increased. However, the increase in size of the infrared detection sensor 1A can be suppressed.
また、チョッパ６の構成は図１に示す構成に限定されるものでなく、例えば、図６に示すような構成であってもよい。図６（ａ）は、赤外線吸収部２と片持ち梁部材３とをそれぞれ３つ配列させた赤外線検出センサ１Ｂ（チョッパ６を除く）の平面図であり、図６（ｂ）は、図６（ａ）のＡ―Ａ断面に沿って赤外線検出センサ１Ｂを切断したときの赤外線検出センサ１Ｂ及びチョッパ６の斜視図である。図６に示すように、チョッパ６は、赤外線ＩＲを透過しない遮光部６３と、該遮光部６３を所定方向（図６（ａ）及び（ｂ）の矢印Ｚ方向）に往復運動させることで、赤外線ＩＲを断続的に赤外線吸収層２２に入射させる駆動部６４とを備える。遮光部６３の表面には赤外線ＩＲを反射するアルミ膜が貼着されている。駆動部６４は所定方向に往復運動する。駆動部６４が往復運動することで、遮光部６３が入射部２１ａの上方（図６（ｂ）の紙面上方）に位置する状態と、入射部２１ａの上方に位置しない状態とを繰り返す。このように、遮光部６３が入射部２１ａの上方に位置する状態と、入射部２１ａの上方に位置しない状態とを繰り返すことにより、赤外線ＩＲが断続的に赤外線吸収層２２に入射する。尚、駆動部６４の往復運動は、静電力を用いて行うことができる。静電力を用いて行う駆動部６４の往復運動は、例えば、特許第２６８２１８１号に記載の微小可動機械機構で行うことができる。また、チョッパ６は、赤外線吸収部２と片持ち梁部材３と一体的に形成してもよい。例えば、同一基板上に赤外線吸収部２と上述の微小可動機械機構とを形成し、赤外線吸収部２に片持ち梁部材３を、微小可動機械機構の可動電極と駆動部６４とが連結されるように微小可動機械機構にチョッパ６を形成する。このように、チョッパ６と、赤外線吸収部２と、片持ち梁部材３とが一体的に形成された赤外線検出センサ１Ｂは、ＭＥＭＳ技術を用いて同一の工程でチョッパ６と、赤外線吸収部２と、片持ち梁部材３とを製作することができる。 Further, the configuration of the chopper 6 is not limited to the configuration shown in FIG. 1, and may be a configuration as shown in FIG. 6, for example. 6A is a plan view of an infrared detection sensor 1B (excluding the chopper 6) in which three infrared absorbing portions 2 and three cantilever members 3 are arranged, and FIG. 6B is a plan view of FIG. It is a perspective view of infrared detection sensor 1B and chopper 6 when infrared detection sensor 1B is cut along an AA section of (a). As shown in FIG. 6, the chopper 6 reciprocates the light shielding part 63 that does not transmit the infrared IR and the light shielding part 63 in a predetermined direction (the arrow Z direction in FIGS. 6A and 6B). And a drive unit 64 that causes the infrared IR to be incident on the infrared absorption layer 22 intermittently. An aluminum film that reflects infrared IR is attached to the surface of the light shielding portion 63. The drive unit 64 reciprocates in a predetermined direction. As the drive unit 64 reciprocates, a state where the light shielding unit 63 is positioned above the incident unit 21a (above the paper surface in FIG. 6B) and a state where it is not positioned above the incident unit 21a are repeated. As described above, the IR IR is intermittently incident on the infrared absorption layer 22 by repeating the state where the light shielding portion 63 is positioned above the incident portion 21a and the state where the light shielding portion 63 is not positioned above the incident portion 21a. In addition, the reciprocating motion of the drive part 64 can be performed using an electrostatic force. The reciprocating motion of the drive unit 64 performed using the electrostatic force can be performed by, for example, a micro movable mechanical mechanism described in Japanese Patent No. 2682181. Further, the chopper 6 may be formed integrally with the infrared absorbing portion 2 and the cantilever member 3. For example, the infrared absorbing unit 2 and the above-described micro movable mechanical mechanism are formed on the same substrate, the cantilever member 3 is connected to the infrared absorbing unit 2, and the movable electrode of the micro movable mechanical mechanism and the driving unit 64 are connected. In this way, the chopper 6 is formed in the minute movable mechanical mechanism. As described above, the infrared detection sensor 1B in which the chopper 6, the infrared absorption unit 2, and the cantilever member 3 are integrally formed includes the chopper 6 and the infrared absorption unit 2 in the same process using the MEMS technology. And the cantilever member 3 can be manufactured.
上記においては、開口部２３の一部を閉塞する片持ち梁部材３について説明したが、片持ち梁部材３は、開口部２３全体を閉塞するものであってもよい。図７は、開口部２３全体を閉塞する片持ち梁部材３を説明する図である。図７（ａ）は、片持ち梁部材３と、開口部２３との平面図であり、図７（ｂ）は、片持ち梁部材３と開口部２３と開口部近傍２３の筐体２１との側面図である。 In the above description, the cantilever member 3 that closes a part of the opening 23 has been described. However, the cantilever member 3 may close the entire opening 23. FIG. 7 is a diagram illustrating the cantilever member 3 that closes the entire opening 23. 7A is a plan view of the cantilever member 3 and the opening 23, and FIG. 7B is a plan view of the cantilever member 3, the opening 23, and the casing 21 in the vicinity of the opening 23. FIG.
図７に示すように、片持ち梁部材３は、開口部２３全体を覆うように、筐体２１の開口部２３を区画する部位２１ｂ全体に跨って筐体２１の外面に載置されている。片持ち梁部材３は、開口部２３よりも所定方向（図７（ａ）の矢印Ｖ方向）の一方側の部位３２が筐体２１に固着されている。片持ち梁部材３は、筐体２１の内部に存在する気体の圧力が上昇すると、片持ち梁部材３を筐体２１の外部に押圧する力が増加し、片持ち梁部材３の筐体２１への固着部を支点として、図７（ｂ）の破線で示すように、片持ち梁部材３が筐体２１の外部に向けて撓む。 As shown in FIG. 7, the cantilever member 3 is placed on the outer surface of the housing 21 so as to cover the entire opening 21 of the housing 21 so as to cover the entire opening 23. . In the cantilever member 3, a portion 32 on one side of the opening 23 in a predetermined direction (the direction of arrow V in FIG. 7A) is fixed to the housing 21. In the cantilever member 3, when the pressure of the gas existing inside the casing 21 increases, the force for pressing the cantilever member 3 to the outside of the casing 21 increases, and the casing 21 of the cantilever member 3 is increased. The cantilever member 3 bends toward the outside of the casing 21 as indicated by a broken line in FIG.
また、撓み量検出手段７３は、光学距離計から片持ち梁部材３までの距離を測定し、該距離に基づいて、片持ち梁部材３の撓み量Ｒ１を検出してもよい。光学距離計から片持ち梁部材３までの距離は、片持ち梁部材３の撓み量Ｒ１によって変動するため、該距離に基づいて、片持ち梁部材３の撓み量Ｒ１を検出することができる。光学距離計から片持ち梁部材３までの距離に基づいて、片持ち梁部材３の撓み量Ｒ１を検出する具体的な構成として、図８に示すように、片持ち梁部材３の撓み方向と直交する方向における片持ち梁部材３までの距離を測定する光学距離計７５を用いた構成を挙げることができる。図８に示すように、光学距離計７５は、例えば、筐体２１の外部に配置することができる。光学距離計７５から出射した光は、筐体２１を透過して、片持ち梁部材３ので反射して、光学距離計７５に入射する。尚、光学距離計７５が出射する光が筐体２１を透過し、片持ち梁部材３で反射できるように、光学距離計７５が出射する光には赤色レーザ光を、筐体２１の材質には、パイレックス（登録商標）ガラスを、片持ち梁部材３の材質にはシリコンを用いることができる。 Further, the deflection amount detecting means 73 may measure the distance from the optical distance meter to the cantilever member 3 and detect the deflection amount R1 of the cantilever member 3 based on the distance. Since the distance from the optical distance meter to the cantilever member 3 varies depending on the deflection amount R1 of the cantilever member 3, the deflection amount R1 of the cantilever member 3 can be detected based on the distance. As a specific configuration for detecting the bending amount R1 of the cantilever member 3 based on the distance from the optical distance meter to the cantilever member 3, as shown in FIG. The structure using the optical distance meter 75 which measures the distance to the cantilever member 3 in the orthogonal direction can be mentioned. As shown in FIG. 8, the optical distance meter 75 can be disposed outside the housing 21, for example. The light emitted from the optical distance meter 75 passes through the housing 21, is reflected by the cantilever member 3, and enters the optical distance meter 75. The light emitted from the optical distance meter 75 is made of red laser light as the material of the casing 21 so that the light emitted from the optical distance meter 75 can be transmitted through the casing 21 and reflected by the cantilever member 3. Can use Pyrex (registered trademark) glass and cantilever member 3 can be made of silicon.
尚、図９に示すように、本発明に係る赤外線検出センサは、片持ち梁部材に代えて両持ち梁部材８を備えてもよい。両持ち梁部材８は、片持ち梁部材と同様に、開口部２３の少なくとも一部を閉塞し、一部のみが筐体に固着されている。具体的には、両持ち梁部材８は、所定方向の一方側の部位と他方側の部位においてのみ筐体に固着されている。所定方向を図９の矢印Ｕ方向（紙面に沿った上下方向）とし、所定方向の他方側を紙面に沿った上方側とすれば、両持ち梁部材８の筐体に固着される部位（以下、「固着部」という）のうち、所定方向一方側の部位は、開口部２３の上端部よりも下方側に存在する部位となる。また、両持ち梁部材８の固着部のうち、所定方向他方側の部位は、所定方向一方側の固着部よりも上方側の部位であり、且つ、開口部２３の下端部よりも上方側に存在する部位である。例えば、図９に示すように、両持ち梁部材８の形状が平面視矩形状である場合は、両持ち梁部材８の固着部は、両持ち梁部材８の上方を形成する一辺部８１と下方を形成する一辺部８２とすることができる。 As shown in FIG. 9, the infrared detection sensor according to the present invention may include a cantilever member 8 instead of the cantilever member. Similarly to the cantilever member, the both-end supported beam member 8 closes at least a part of the opening 23 and only a part thereof is fixed to the casing. Specifically, the both-end supported beam member 8 is fixed to the housing only at one side portion and the other side portion in a predetermined direction. If the predetermined direction is the arrow U direction (up and down direction along the paper surface) in FIG. 9 and the other side of the predetermined direction is the upper side along the paper surface, the part (hereinafter referred to as “fixed”) to the casing of the doubly supported beam member 8 , A portion on one side in the predetermined direction is a portion existing below the upper end of the opening 23. Further, in the fixed portion of the both-end supported beam member 8, the portion on the other side in the predetermined direction is a portion on the upper side with respect to the fixed portion on the one side in the predetermined direction and above the lower end portion of the opening 23. It is a site that exists. For example, as shown in FIG. 9, when the shape of the both-end supported beam member 8 is a rectangular shape in plan view, the fixed portion of the both-end supported beam member 8 is one side portion 81 that forms the upper side of the both-end supported beam member 8. It can be set as the one side part 82 which forms a lower part.
両持ち梁部材８においても、片持ち梁部材と同様に、赤外線吸収層の赤外線吸収量の変化に対する撓み量の変化は薄膜よりも大きい。このため本発明に係る赤外線検出センサは、両持ち梁部材８を備えた場合であっても、赤外線を精度良く検出することができると共に、コンパクトにすることができる。また、両持ち梁部材８は、２箇所（所定方向一方側と他方側の部位）で筐体に固着されるため、振動等によって筐体から取り外れる恐れが小さい。よって、両持ち梁部材８を採用することで、赤外線検出センサの耐振動性等を向上させることができる。 Also in the cantilever member 8, the change in the amount of bending with respect to the change in the infrared absorption amount of the infrared absorption layer is larger than that in the thin film, as in the cantilever member. For this reason, the infrared detection sensor according to the present invention can detect infrared rays with high accuracy and can be made compact even when the double-supported beam member 8 is provided. Further, since the double-supported beam member 8 is fixed to the housing at two locations (one side on the predetermined direction and the other side in the predetermined direction), there is little possibility of being detached from the housing due to vibration or the like. Therefore, the vibration resistance of the infrared detection sensor can be improved by adopting the both-end supported beam member 8.
１、１Ａ…赤外線検出センサ、２…赤外線吸収部、２１…筐体、２２…赤外線吸収層、２３…開口部、３…片持ち梁部材、４…遮光膜、５…赤外線フィルタ、６…チョッパ、７１…第１電極、７２…第２電極、８…両持ち梁部材 DESCRIPTION OF SYMBOLS 1, 1A ... Infrared detection sensor, 2 ... Infrared absorption part, 21 ... Housing | casing, 22 ... Infrared absorption layer, 23 ... Opening part, 3 ... Cantilever member, 4 ... Light shielding film, 5 ... Infrared filter, 6 ... Chopper 71 ... 1st electrode, 72 ... 2nd electrode, 8 ... Both-ends support beam member
Claims (4)
前記開口部の少なくとも一部を閉塞するように、一部のみが前記筐体に固着され、前記筐体への固着部を支点として撓むことが可能な片持ち梁部材又は両持ち梁部材とを備える赤外線検出センサであって、
前記筐体は、赤外線を透過可能な入射部と、前記片持ち梁部材又は前記両持ち梁部材に対向する底面とを有し、
前記赤外線吸収層は、前記入射部に対向して配置され、
前記片持ち梁部材又は前記両持ち梁部材は、前記入射部に対し前記赤外線吸収層より下方に離間して位置し、前記赤外線吸収層に対して平行に設けられ、
前記片持ち梁部材又は前記両持ち梁部材に設けられた第１電極と、
前記第１電極に対向するように前記筐体の底面に設けられた第２電極と、
前記第１電極と前記第２電極との間の静電容量に基づいて、前記片持ち梁部材又は前記両持ち梁部材の撓み量を検出する撓み量検出手段と、
該撓み量検出手段が検出した撓み量に基づいて、赤外線を検出する赤外線検出手段とを更に備えることを特徴とする赤外線検出センサ。 A housing in which gas is present, an infrared absorbing layer that is disposed inside the housing and converts absorbed infrared light into heat, and an opening that is provided in the housing and allows communication between the inside and outside of the housing An infrared absorber comprising:
A cantilever member or a doubly supported beam member that is only partially fixed to the housing so as to close at least a portion of the opening, and can be bent using the fixing portion to the housing as a fulcrum; An infrared detection sensor comprising:
The housing includes an incident portion that can transmit infrared rays, and a bottom surface facing the cantilever member or the both-end supported beam member,
The infrared absorption layer is disposed to face the incident portion,
The cantilever member or the cantilever member is positioned below the infrared absorption layer with respect to the incident portion, and is provided in parallel to the infrared absorption layer,
A first electrode provided on the cantilever member or the cantilever member;
A second electrode provided on the bottom surface of the housing so as to face the first electrode;
Deflection amount detecting means for detecting a bend amount of the cantilever member or the both-end cantilever member based on the capacitance between the first electrode and the second electrode;
An infrared detection sensor further comprising infrared detection means for detecting infrared rays based on the deflection amount detected by the deflection amount detection means .
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