JP5133232B2 - Film forming apparatus and film forming method - Google Patents

Description

  The present invention relates to a film forming apparatus and a film forming method for forming a thin film by sputtering a target.

  As a technique for realizing high output in a tunnel magnetoresistive element, a technique for applying an MgO film to a tunnel insulating film constituting the magnetoresistive element is generally known, and a film forming apparatus for forming such an MgO film For example, a so-called sputtering apparatus is used in which a target made of MgO is sputtered and MgO particles scattered from the target are deposited on the substrate (for example, Patent Document 1).

  By the way, as a condition for realizing the high output as described above, a crystal orientation having a high (001) plane orientation is required for a pair of magnetic films sandwiching the MgO film. In order to cause the magnetic film to be expressed by annealing the magnetic film, the MgO film capable of controlling the crystal orientation of the magnetic film is required to have a crystal orientation with a high (001) plane orientation.

In order to realize this (001) orientation using the sputtering apparatus described above, first, the surface property of the substrate is required to be amorphous, and further against MgO particles incident on the surface of such a substrate. Therefore, there is a need for incident energy capable of achieving polycrystallization of the same particles and preferential orientation to the (001) plane.
JP2008-127615

  On the other hand, if the incident energy of the MgO particles described above becomes excessively high during the film formation process, excessive energy is supplied to the surface of the amorphous substrate, and such excessive energy causes the underlying surface Amorphousness is impaired. In addition, in the process of forming a thin film using the sputtering method described above, since the sputtering gas for sputtering the target is incident on the surface of the substrate as recoil particles from the target, the incident energy of these recoil particles is Even if it becomes excessive, the amorphousness of the underlying surface is impaired as described above. As a result, the information on the crystallized substrate surface is reflected on the MgO film deposited on the substrate surface, and the desired (001) orientation cannot be realized in the MgO film.

  These problems related to the crystal orientation of the MgO film are largely attributable to the incident energy of the sputtered particles. Therefore, the larger the variation of the incident energy, that is, the larger the size of the substrate that is the film formation target, the more obvious. To become. Further, as the damage to the thin film due to the plasma distribution in the sputtering apparatus, such as the incident energy of the sputtered particles as described above, in addition to the disorder of the orientation of the MgO film described above, for example, a YBCO film that is a superconducting material or a transparent An increase in resistance value related to an ITO film or the like as an electrode material is known.

  The present invention has been made to solve the above problems, and an object thereof is to provide a film forming apparatus and a film forming method for suppressing damage to a thin film caused by plasma generated in a film forming space. .

The invention according to claim 1 is a stage for supporting a disk-shaped substrate accommodated in a vacuum chamber so as to be rotatable in a circumferential direction of the substrate, a gas supply unit for supplying a sputtering gas into the vacuum chamber, In the vacuum chamber to which the sputtering gas is supplied, the target surface exposed in the vacuum chamber is provided in the vacuum chamber in a form inclined with respect to the surface of the substrate and supplied with power. A film forming apparatus for forming a thin film on a surface of the substrate by sputtering the target surface by supplying the electric power to the target while rotating the substrate in the circumferential direction, the surface of the substrate being a projection surface The erosion region on the target surface is disposed between the substrate and the target so as to cover a projection region that is a region projected in the normal direction of the target surface. And summarized in that with a suppressor for suppressing member incidence of the particles to the projection area Te.

  In the projection area on the surface of the substrate where the erosion area of the target is projected, generally, sputtered particles in a relatively high energy state are incident at a high frequency among particles constituting the plasma space. According to the first aspect of the present invention, in the process of forming the thin film using the sputtering method, the incidence of such sputtered particles on the projection region is suppressed by the suppressing member. Therefore, damage to the thin film due to the plasma generated in the film formation space can be suppressed. Moreover, although the projection area on the substrate surface is covered with such a restraining member, the substrate continues to rotate by the stage in the process of forming the thin film, so that the area not covered by the restraining member, that is, a relatively low energy state. An incident area of a certain sputtered particle can be widened on the substrate surface, and deterioration of film thickness uniformity due to the suppressing member can be suppressed.

  According to a second aspect of the present invention, the projection region is a region that is biased radially outward of the substrate from the center of the substrate, and the suppression member covers the entire projection region with respect to the erosion region. The gist is that it is a plate material.

  According to invention of Claim 2, since the whole projection area | region is covered by the suppression member, the incidence of the charged particle to such projection area | region can be suppressed reliably. In addition, since the range of the projection area is deviated from the center of the substrate, sputtered particles from the target can be deposited over the entire substrate surface, although the entire projection area is covered by the suppressing member.

The gist of the invention described in claim 3 is that the suppression member is a plate member having an outer edge along a boundary between the projection region and the non-projection region.
According to the third aspect of the present invention, since the sputtered particles can be reliably incident on the non-projection area on the substrate surface, it becomes easier to ensure the film thickness uniformity of the thin film.

The invention according to claim 4 is characterized in that the potential of the suppressing member is a ground potential.
According to the fourth aspect of the present invention, since accumulation of charges due to charged particles, electrons, and the like from the plasma space can be avoided in the suppression member, it is possible to suppress instability of the plasma state caused by the suppression member.

The gist of the invention described in claim 5 is that the surface of the substrate is amorphous and the target is an MgO target.
According to the fifth aspect of the present invention, damage to the MgO film due to the plasma generated in the film formation space can be suppressed.

The invention according to claim 6 is the target surface exposed to the vacuum chamber by supplying a sputtering gas into the vacuum chamber while rotating the disk-shaped substrate accommodated in the vacuum chamber in the circumferential direction of the substrate. Forming a thin film on the surface of the substrate by supplying electric power to the target disposed in the vacuum chamber in a manner inclined with respect to the surface of the substrate and sputtering the target surface with the sputtering gas. A method of the present invention, wherein the erosion area of the target surface covers the projection area that is an area projected in the normal direction of the target surface with the surface of the substrate as a projection plane. The gist of the invention is to form the thin film while disposing a suppressing member and suppressing the incidence of particles into the projection region by the suppressing member.

  In the projection area on the surface of the substrate where the erosion area of the target is projected, generally, sputtered particles in a relatively high energy state are incident at a high frequency among particles constituting the plasma space. According to the sixth aspect of the present invention, in the process of forming a thin film using the sputtering method, the incidence of such sputtered particles on the projection region is suppressed by the suppressing member. Therefore, damage to the thin film due to the plasma generated in the film formation space can be suppressed. Moreover, although the projection area on the substrate surface is covered with such a restraining member, the substrate continues to rotate by the stage in the process of forming the thin film, so that the area not covered by the restraining member, that is, a relatively low energy state. An incident area of a certain sputtered particle can be widened on the substrate surface, and deterioration of film thickness uniformity due to the suppressing member can be suppressed.

The gist of the invention described in claim 7 is that the substrate surface is amorphous and the target is an MgO target.
According to the seventh aspect of the invention, damage to the MgO film due to the plasma generated in the film formation space can be suppressed.

  As described above, according to the present invention, it is possible to provide a film forming apparatus and a film forming method for suppressing damage to a thin film caused by plasma generated in a film forming space when the thin film is formed by sputtering. Can do.

  DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, an embodiment of the invention will be described with reference to the drawings. FIG. 1 is a side cross-sectional view schematically showing a cross-sectional structure of the film forming apparatus 10, and FIGS. 2A and 2B are diagrams showing the relationship between the erosion area and the shielding ring as a suppressing member in the film forming apparatus 10, respectively. It is the side view and top view which show typically.

As shown in FIG. 1, an exhaust system 12 that exhausts the internal space of the vacuum chamber 11 is connected to the vacuum chamber 11 in the film forming apparatus 10. The internal pressure can be reduced to, for example, 1 × 10 ⁻⁶ Pa or less. Further, a gas supply unit 13 that supplies rare gas argon (Ar), xenon (Xe), or krypton (Kr) to the inside of the vacuum chamber 11 is connected to the vacuum chamber 11 having the exhaust system 12. ing. The gas supply unit 13 supplies a rare gas to the inside of the vacuum chamber 11, and the exhaust system 12 described above exhausts the rare gas from the vacuum chamber 11, so that the inside of the vacuum chamber 11 has, for example, 10 mPa to 300 mPa. An atmosphere with noble gas can be formed.

A substrate stage 14 for holding a disk-shaped substrate S is mounted on the bottom inside the vacuum chamber 11 so as to be connected to the output shaft of the substrate stage rotating mechanism 15. As the substrate S in the present embodiment, for example, a Si wafer having a diameter of 8 inches, an AlTiC wafer, a glass wafer, or the like can be used, and a substrate whose surface is amorphous can be used. The substrate stage 14 receives the driving force of the substrate stage rotating mechanism 15 while maintaining the substrate S held on the substrate stage 14 at room temperature, and thereby rotates the substrate which is a normal line including the center of the substrate S. The substrate S is rotated along the circumferential direction of the substrate S with the axis A1 as the rotation center. The substrate stage 14 having such a configuration can uniformly disperse sputtered particles from one direction over the entire circumference of the substrate S, and can improve the uniformity of the deposit on the substrate S.

  Inside the vacuum chamber 11, an annular lower shielding plate 16 </ b> A that covers the periphery of the substrate stage 14 is disposed so as to be connected to the output shaft of the elevating mechanism 17. The lower shielding plate 16 </ b> A is lifted and lowered along the substrate rotation axis A <b> 1 of the substrate S by receiving the driving force of the lifting mechanism 17, and at the lowermost position (position shown in FIG. 1) around the substrate stage 14 and the vacuum chamber 11. The film formation species is shielded from the bottom, and deposition of the film formation species around the substrate stage 14 and the bottom of the vacuum chamber 11 is suppressed. Further, the lower shielding plate 16A is detached from the periphery of the substrate stage 14 at the uppermost position, and allows the substrate S to be carried in and out.

  Above the lower shielding plate 16 </ b> A, a cylindrical upper shielding plate 16 </ b> B that covers the upper side of the elevating mechanism 17 and tapers downward is arranged in a form fixed to the vacuum chamber 11. The upper shielding plate 16 </ b> B shields the film-forming species from the periphery of the elevating mechanism 17 and the inner wall of the vacuum chamber 11, and suppresses deposition of film-forming species on the periphery of the elevating mechanism 17 and the inner wall of the vacuum chamber 11.

  An annular cover ring CR is provided along the outer periphery of the substrate S on the radially inner side of the lower shielding plate 16A. When the lower shielding plate 16A is located at the lowest position, the cover ring CR is placed on the substrate stage. When the substrate stage 14 rotates from this state, the covering CR rotates together with the substrate S to suppress deposition of film forming species on the substrate stage 14. On the other hand, when the lower shielding plate 16A is lifted from the lowermost position to the uppermost position, the cover ring CR is detached from the substrate stage 14 while being placed on the upper surface of the lower shielding plate 16A. As a result, the substrate S can be placed on and removed from the substrate stage 14.

On the upper side of the vacuum chamber 11, a cathode 18 for generating plasma is mounted inside the vacuum chamber 11. The backing plate 19 of the cathode 18 is electrically connected to an external power source GE that outputs, for example, high frequency power of 13.56 MHz in a mode where the power density is 2.85 W / cm ² . Further, a target 20 formed in a disk shape that exposes the target surface 20 </ b> S that is an inner surface toward the inside of the vacuum chamber 11 is electrically connected to the substrate S side of the backing plate 19. The target 20 is mainly composed of constituent elements of a thin film formed on the substrate S. In this embodiment, an MgO target having a main component of MgO and a diameter of 5 inches is used.

  The target 20 described above is mounted in the vacuum chamber 11 such that the target surface 20S that is the inner surface thereof is inclined with respect to the surface of the substrate S. For example, the target normal A2 that is the normal of the target surface 20S and the substrate The oblique incident angle θ, which is an angle formed between the S and the substrate rotation axis A1, is, for example, 22 °. Moreover, it mounts in the vacuum chamber 11 in the form in which the distance between TS which is the distance between the center of the target surface 20S and the surface of the board | substrate S is set to 200 mm, for example.

  A magnetic circuit 21 is disposed on the opposite side of the target 20 with the backing plate 19 in between, and the magnetic circuit 21 operates in a state where high-frequency power from the external power supply GE is supplied to the backing plate 19. A magnetron magnetic field is formed on the target surface 20S of the target 20. Since the high-density plasma is generated in the vicinity of the target surface 20S of the target 20, the target surface 20S of the target 20 functions as a cathode, and the target surface 20S is sputtered by rare gas ions. At this time, an erosion region is formed on the target surface 20S of the target 20 as a region where the constituent elements are ejected. In the present embodiment, the entire target surface 20S is configured to be the erosion region due to the uniformity of plasma formed by the magnetic circuit 21.

  On the side of the substrate S with respect to the target 20, a shutter 22 formed in a dome shape that covers the upper side of the substrate S is disposed immediately above the substrate stage 14 in a form connected to the output shaft of the shutter rotation mechanism 23. In part of the shutter 22, an opening 22 </ b> H that is a through hole that allows the entire target surface 20 </ b> S of the target 20 to be exposed toward the substrate S is formed. The shutter 22 having such a configuration rotates around the substrate rotation axis A1 of the substrate S by receiving the driving force of the shutter rotation mechanism 23, and when high frequency power is supplied to the backing plate 19 as described above, The 20 target surfaces 20S and the opening 22H are fixed in a state of being opposed to each other so that the target 20 can be sputtered. Further, when high frequency power is not supplied to the backing plate 19, the shutter 22 is fixed in a state of covering the target surface 20S of the target 20, disabling sputtering on the target 20, and contamination on the target surface 20S is suppressed.

When the film forming process is started in the film forming apparatus 10 having such a configuration, the film forming apparatus 10 drives the exhaust system 12 to depressurize the inside of the vacuum chamber 11 to 1 × 10 ⁻⁶ Pa or less. By carrying the substrate S into the tank 11 and driving the gas supply unit 13, an atmosphere made of a rare gas having a pressure of 0.01 Pa to 0.02 Pa is formed. Subsequently, the film forming apparatus 10 drives the substrate stage rotation mechanism 15 to rotate the substrate S about the substrate rotation axis A1, and at the same time, drives the shutter rotation mechanism 23 to open the opening 22H of the shutter 22. The target surface 20S is opposed. Then, the film forming apparatus 10 drives the external power source GE to sputter the target 20, and the MgO film oriented in the (001) plane orientation on the surface of the amorphous substrate S has a film thickness of, for example, 5 nm to 20 nm. Form with.

  By the way, in the sputtering process as described above, it is natural that MgO particles that are constituent elements of the target 20 are scattered toward the substrate S. In addition to this, ions of rare gas reflected from the target surface 20S, Even sputtered particles made of a rare gas that recoils from the target surface 20S are scattered toward the substrate S. When such a sputtered particle is irradiated to the substrate S with excessive incident energy, the crystal growth of MgO deposited on the surface of the substrate S is hindered and deposited. MgO is physically etched by such particles, and the growth itself of the MgO film is inhibited.

  In the film forming apparatus 10 having the above-described configuration, since the distance between the target surface 20S and the surface of the substrate S is different in the plane of the substrate S, between the sputtered particles flying toward the surface of the substrate S The collision frequency also varies within the plane of the substrate S, and the incident energy of the sputtered particles described above also varies within the plane of the substrate S. As a result, on the surface of the substrate S where the distance from the target surface 20S becomes relatively short, the above-described incident energy becomes particularly high, and the orientation in the (001) plane direction required for the MgO film The film thickness of the MgO film itself is relatively greatly damaged, that is, damaged.

  Therefore, as shown in FIGS. 2A and 2B, in the film forming apparatus 10 described above, between the erosion region of the target surface 20S, which is the region where the sputtered particles scatter, and the surface of the substrate S, A shielding ring 30 which is a suppressing member for suppressing the sputtered particles from directly entering the surface of the substrate S is provided. The shielding ring 30 is made of a conductive annular plate disposed substantially parallel to the surface of the substrate S, and an annular ring portion 31 surrounding the outside of the substrate S is placed on the lower shielding plate 16A. It is arranged in a shape. By connecting this ring portion 31 to the vacuum chamber 11, the entire shielding ring 30 is electrically grounded.

The target surface 20S, which is the erosion region, is projected along the target normal line A2 with the surface of the substrate S as a projection surface, thereby virtually projecting the projection region SP, which is the projection image, onto the surface of the substrate S. Form. The projection region SP on the surface of the substrate S has an elliptical arc-shaped outer edge that is biased outward from the substrate rotation axis A1 in the radial direction of the substrate S. This projection area SP
In the middle of the projection space connecting the target surface 20S and the target surface 20S, the shielding portion 32 of the shielding ring 30 is arranged so as to cross the projection space. The shielding part 32 of the shielding ring 30 is formed in a flat plate shape extending from a part of the ring part 31 toward the substrate rotation axis A1, and the outer edge of the shielding part 32 is an elliptical arc shape along the outer peripheral surface of the projection space. Formed so as to cover the entire target surface 20S viewed from the projection area SP.

  In the sputtering process described above, most of the rare gas ions reflected from the target surface 20S and the rebounded rare gas fly along the target normal line A2. Of the sputtered particles scattered from the target surface 20S, particles having a low collision frequency, that is, particles in a relatively high energy state, continue to fly toward the surface of the substrate S in the projection space. According to the shielding ring 30 having the above-described configuration, since the particles in such a high energy state collide with and are reflected by the shielding portion 32 disposed in the middle of the projection space, the substrate S of the particles in the high energy state. Is prevented from entering the surface. Therefore, in the projection region SP in which the distance to the target surface 20S is relatively short, the incidence of ions reflected from the target surface 20S and recoiled particles can be suppressed, and the incident of such particles is accompanied. Damage can be suppressed.

  In addition, although the incidence of MgO particles is suppressed and the deposition rate of the MgO film is reduced with respect to the projection region SP, the substrate rotation axis A1 is used in the process of forming the MgO film. Since the substrate S continues to rotate around the center of the substrate S, the projection region SP, which is a region where the film forming speed is low, and the non-projection region, which is a region excluding the projection region SP, are periodically formed on the surface of the substrate S. Can be switched to. Therefore, since the non-projection area described above can be dispersed on the time axis over the entire surface of the substrate S, deterioration in film thickness uniformity due to shielding by the shielding part 32 can be suppressed. In addition, in the film forming apparatus 10 having the above-described configuration, the projection region SP is formed at a position that is deviated from the substrate rotation axis A1 to the outside in the radial direction of the substrate S. In other words, the MgO particles scattered from the target surface 20S can be deposited over the entire surface of the substrate S.

  Further, since the projection region SP described above is a projection of the erosion region, and the shielding portion 32 of the shielding ring 30 is formed in a shape along the projection region SP, the relative distance from the target surface 20S. The sputtered particles in a low energy state can be reliably incident on the non-projection region where the length of the film is relatively long. Therefore, it is possible to further ensure the film thickness uniformity of the MgO film. Further, since the potential of the shielding ring 30 is the ground potential, the accumulation of charges due to charged particles, electrons, etc. from the plasma space can be avoided in the shielding ring 30, and the plasma state caused by such shielding ring is unstable. Can also be suppressed.

As described above, according to the above embodiment, the following effects can be obtained.
(1) According to the embodiment, the incidence of sputtered particles on the projection region SP is suppressed by the shielding part 32 of the shielding ring 30. Therefore, damage to the MgO film due to the plasma generated in the film forming space inside the vacuum chamber 11 is suppressed.

  (2) Although the projection region SP on the surface of the substrate S is covered with the shielding part 32, the substrate S continues to rotate by the substrate stage 14 in the process of forming the MgO film, so that the energy level is relatively low. Incidence of certain sputtered particles spreads over the entire surface of the substrate S. Therefore, the deterioration of the film thickness uniformity due to the shielding by the shielding part 32 can be suppressed.

(3) Furthermore, since the amorphous nature of the underlying surface is not impaired, high crystal orientation can be realized in the crystal growth of the MgO film.
(4) According to the above embodiment, since the entire projection area SP is covered by the shielding part 32, the incidence of charged particles on the projection area SP can be reliably suppressed. Moreover, since the range of the projection region SP is deviated from the center of the substrate S, the entire projection region SP is covered by the shielding part 32, but sputtered particles from the target 20 are deposited over the entire surface of the substrate S. be able to.

  (5) According to the above embodiment, since the sputtered particles having relatively low energy can be reliably incident on the non-projection region on the surface of the substrate S, the MgO film with reduced damage is applied to the entire surface of the substrate S. In addition, it can be formed more uniformly.

  (6) According to the above-described embodiment, since the potential of the shielding ring 30 is the ground potential, the accumulation of charges due to charged particles, electrons, etc. from the plasma space can be avoided in the shielding ring 30, and such shielding is possible. Instability of the plasma state caused by the ring 30 can also be suppressed.

In addition, the said embodiment can also be changed and implemented in the following forms.
In the above embodiment, the constituent element of the target is embodied as MgO, and the thin film is embodied as an MgO film. The thin film, which is a film-formed product, may be embodied as a YBCO film. Further, indium tin oxide (ITO) or tin oxide (ZnO) that is a transparent electrode material can be embodied as a constituent element of a target, and a thin film that is a film-formed product can be embodied as an ITO film or a ZnO film. According to such a form, it is possible to suppress the increase in resistance, which is damage from the incident particles described above, with respect to the superconducting thin film and the transparent electrode film formed by sputtering.

  In the above embodiment, the mode in which the potential of the shielding ring 30 serving as the suppressing member is the ground potential has been described. However, when there is no plasma instability due to the shielding ring 30, the potential of the shielding ring 30 is May be in the form of a floating potential. According to such a form, the freedom degree of the electrical structure regarding a suppression member can also be expanded.

  In the above embodiment, the outer edge of the shielding part 32 in the shielding ring 30 has been described along the outer peripheral surface of the projection space. However, the shielding part 32 may be configured in a rectangular plate shape by changing this. It is only necessary that the shielding portion 32 covers the entire erosion region viewed from the region SP.

  In the above embodiment, the projection area SP has been deviated radially outward from the substrate rotation axis A1. However, the present invention is not limited to this, and for example, the projection area SP has an elliptical shape including the substrate rotation axis A1. In other words, it may be an area of a projected image obtained by projecting the erosion area along the target normal A2 with the surface of the substrate S as the projection plane.

  In the above-described embodiment, the mode in which the entire target surface 20S is the erosion region has been described. Since the erosion region formed on the target surface 20S varies greatly depending on the mode such as the magnetron magnetic field formed by the magnetic circuit 21, for example, the erosion region is a part of the target surface 20S and the shape thereof is elliptical or An annular shape may be used, and any projection space in which such an erosion region is projected may be shielded by the shielding unit 32.

In the above embodiment, the mode in which the entire side of the target 20 viewed from the projection region SP is covered by the shielding portion 32 has been described. The part may be covered with the shielding part 32. Even in such a form, damage to the thin film can be suppressed to the extent that some of the particles incident on the surface of the substrate S from the projection space are shielded by the shielding portion 32.

  In the above embodiment, the shielding part 32 of the shielding ring 30 that is a restraining member is embodied in a flat plate shape, but this is changed to form, for example, a part or the whole of the shielding part 32 in a net shape. Also good. Even in such a form, damage to the thin film can be suppressed to the extent that some of the particles incident on the surface of the substrate S from the projection space are shielded by the shielding portion 32.

  In the above-described embodiment, the configuration in which the number of targets 20 mounted on one film forming apparatus 10 is set to one has been described, but even in the configuration in which a plurality of targets 20 are mounted on one film forming apparatus 10. Good.

  In the above embodiment, the sputtering gas is embodied as a rare gas such as Ar, Xe, or Kr. However, for example, the rare gas such as helium (He), neon (Ne), or a reaction can be changed. It is also possible to select appropriately according to the film formation target, the constituent elements of the target, such as nitrogen oxide (NO, NO 2) and carbon oxide (CO, CO 2), which are gases having the property.

1 is a side cross-sectional view schematically showing a cross-sectional structure of a film forming apparatus in an embodiment. (A) (b) The figure which shows typically the arrangement | positioning relationship between the erosion area | region and suppression member in this embodiment.

Explanation of symbols

  DESCRIPTION OF SYMBOLS S ... Substrate, SP ... Projection area, A1 ... Substrate rotation axis, A2 ... Target normal line, 10 ... Deposition device, 11 ... Vacuum chamber, 13 ... Gas supply unit, 14 ... Substrate stage, 18 ... Cathode, 19 ... Backing Plate, 20 ... target, 20S ... target surface, 30 ... shielding ring, 31 ... ring part, 32 ... shielding part.

Claims (7)

A stage that supports a disk-shaped substrate accommodated in a vacuum chamber so as to be rotatable in the circumferential direction of the substrate;
A gas supply unit for supplying a sputtering gas into the vacuum chamber;
A target surface that is exposed in the vacuum chamber and is provided in the vacuum chamber in a manner that the target surface is inclined with respect to the surface of the substrate;
A film forming apparatus that forms the thin film on the surface of the substrate by sputtering the target surface by supplying the power to the target while rotating the substrate in the circumferential direction in the vacuum chamber to which the sputtering gas is supplied. Because
The projection is arranged between the substrate and the target so that the erosion region of the target surface covers a projection region which is a region projected in the normal direction of the target surface with the surface of the substrate as a projection surface. A film forming apparatus comprising a suppressing member for suppressing incidence of particles into a region. The projected region is a region deviated radially outward of the substrate from the center of the substrate;
The film forming apparatus according to claim 1, wherein the suppressing member is a plate material that covers the entire projection area with respect to the erosion area. The film forming apparatus according to claim 1, wherein the suppressing member is a plate member having an outer edge along a boundary between the projection region and the non-projection region. The film forming apparatus according to claim 1, wherein a potential of the suppressing member is a ground potential. The surface of the substrate is amorphous;
The film forming apparatus according to claim 1, wherein the target is an MgO target. A sputtering gas is supplied into the vacuum chamber while rotating a disk-shaped substrate accommodated in the vacuum chamber in the circumferential direction of the substrate, and the target surface exposed in the vacuum chamber is inclined with respect to the surface of the substrate A film forming method for forming a thin film on the surface of the substrate by supplying power to the target disposed in the vacuum chamber and sputtering the target surface with the sputtering gas.
A suppression member is arranged between the substrate and the target so that the erosion region of the target surface covers the projection region, which is a region projected in the normal direction of the target surface, with the surface of the substrate being the projection surface. And forming the thin film while suppressing the incidence of particles on the projection region by the suppression member. The surface of the substrate is amorphous;
The film forming method according to claim 6, wherein the target is an MgO target.

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