JP5144697B2 - Susceptor, epitaxial wafer manufacturing apparatus, and epitaxial wafer manufacturing method - Google Patents

Description

  The present invention relates to a susceptor, an epitaxial wafer manufacturing apparatus, and an epitaxial wafer manufacturing method.

In recent years, with the high integration of semiconductor elements, it has become important to reduce crystal defects in semiconductors, particularly crystal defects in and near the surface. For this reason, the demand for the epitaxial wafer which vapor-phase-grown the epitaxial film excellent in crystallinity on the surface of the substrate wafer is increasing year by year.
In such an epitaxial wafer, a substrate wafer having a high gettering effect, that is, a substrate wafer containing a dopant in a high concentration (substrate wafers such as p + and p ++ types) is often used.
However, when such a substrate wafer is used, the substrate wafer is heated by irradiating the substrate wafer with an infrared lamp light or the like when vapor-phase-growing the epitaxial film. The phenomenon of diffusion and release into the gas phase, and the so-called auto-doping phenomenon that the released dopant is taken into the epitaxial film occurs. For this reason, there is a problem that the dopant concentration varies in the plane of the epitaxial film, the resistivity of the outer peripheral portion of the epitaxial film is lowered, and the resistivity distribution in the plane is not uniformed.

In order to avoid such a problem, a technique related to the structure of a susceptor on which a substrate wafer is placed when an epitaxial wafer is manufactured has been proposed (see, for example, Patent Document 1 or Patent Document 2).
The susceptor described in Patent Document 1 or Patent Document 2 has a through-hole formed from the mounting surface of the substrate wafer to the back surface facing the mounting surface. By forming a through hole in the susceptor in this way, when the epitaxial film is grown in a vapor phase, the dopant diffused outward from the back surface of the substrate wafer and released into the vapor phase passes through the through hole of the susceptor. Released from the bottom side. For this reason, it can suppress that a dopant goes around to the surface side of a substrate wafer, and generation | occurrence | production of the auto dope phenomenon is suppressed.

JP 2003-229370 A JP 2003-197532 A

In the susceptor described in Patent Document 1 or Patent Document 2, when the epitaxial film is grown in a vapor phase, infrared lamp light or the like is directly irradiated to a part of the back surface of the substrate wafer through the through hole. For this reason, on the back side of the substrate wafer, the temperature difference between the irradiated part of infrared lamp light and the non-irradiated part becomes large, slip dislocation is likely to occur in the substrate wafer, and the thickness uniformity in the epitaxial wafer is ensured. Hard to do.
Therefore, when manufacturing an epitaxial wafer, there exists a problem that it is difficult to maintain the reliability of an epitaxial wafer.

  An object of the present invention is to provide a susceptor, an epitaxial wafer manufacturing apparatus, and an epitaxial wafer manufacturing method capable of suppressing the occurrence of an autodoping phenomenon and ensuring the reliability of the epitaxial wafer when manufacturing an epitaxial wafer. is there.

The susceptor of the present invention is a susceptor on which the substrate wafer is placed when an epitaxial wafer is manufactured by vapor-phase growth of an epitaxial film on the surface of the substrate wafer, and when the substrate wafer is placed. And a space formed between the substrate wafer and the susceptor and the outside of the susceptor. The communication path includes an opening facing the space and an outside of the susceptor. The side surface of the susceptor is formed in a stepped shape in which the cross-sectional area is reduced from the upper side to the lower side, and the stepped portion is formed so as not to interfere with the thickness direction of the susceptor. And the communication path is formed in the stepped portion and communicates the space and the outside of the susceptor.
The above-mentioned cross-sectional area means a cross-sectional area when the susceptor is cut along a horizontal plane.
According to the present invention, since at least one communication path communicates the space portion and the outside of the susceptor, when the epitaxial film is vapor-phase grown, it is diffused outward from the back surface of the substrate wafer and released into the space portion. The dopant can be released to the outside of the susceptor via the communication path. For this reason, it can suppress that a dopant wraps around to the surface side of a substrate wafer, suppresses generation | occurrence | production of an auto dope phenomenon efficiently, and can manufacture the epitaxial wafer with a uniform in-plane resistivity distribution.
Further, the communication path is formed so that the opening facing the space and the opening facing the outside of the susceptor do not interfere planarly in the thickness direction of the susceptor. That is, the communication path is formed so that the opening facing the outside of the susceptor is not visible from the opening facing the space portion in plan view in the thickness direction of the susceptor. A part of the back surface of the substrate wafer is not directly irradiated. For this reason, the temperature of the whole back surface of the substrate wafer can be made uniform, and an epitaxial wafer having a uniform thickness can be produced without causing slip dislocation in the substrate wafer.

Further, since the communication path is formed in the side surface portion of the susceptor, the dopant is satisfactorily released from the space portion to the outside of the susceptor via the communication path, and the occurrence of the auto-doping phenomenon can be efficiently suppressed.
By the way, when the communication path is formed on the lower surface portion of the susceptor, for example, infrared lamp light or the like is not directly irradiated to the communication path, so that the formation part where the communication path is formed and the non-formation part where the communication path is not formed Temperature difference is likely to occur. For this reason, in the susceptor, thermal stress is applied in the in-plane direction, and there is a possibility that deformation or destruction may occur depending on the size of the communication path and / or the formation position.
According to the present invention, the communication path is formed in the side surface portion of the susceptor, that is, not formed in the lower surface portion, so that a temperature difference does not occur in the lower surface portion of the susceptor. Therefore, the susceptor is not deformed or broken by the above-described thermal stress, and the substrate wafer can be favorably supported when the epitaxial wafer is produced, and the epitaxial wafer can be favorably produced.

Here, it is preferable that the step portion is formed in a tapered shape in which a cross-sectional area increases as it goes downward.
The above-mentioned cross-sectional area means a cross-sectional area when the susceptor is cut along a horizontal plane.

The manufacturing apparatus of the present invention is an epitaxial wafer manufacturing apparatus for manufacturing an epitaxial wafer by vapor-phase-growing an epitaxial film on the surface of a substrate wafer, wherein the susceptor described above and the susceptor are installed therein, and the substrate A reaction vessel capable of supplying a reaction gas for vapor-phase growth of an epitaxial film on the surface of the wafer; and a heating device for heating the substrate wafer during vapor-phase growth of the epitaxial film. It is characterized by.
According to the present invention, the manufacturing apparatus includes the above-described susceptor, reaction vessel, and heating device, and thus can enjoy the same operations and effects as the above-described susceptor.

In the manufacturing method of the present invention, a substrate wafer is placed on a susceptor, a reaction gas is supplied to the substrate wafer while heating the substrate wafer on the susceptor, and an epitaxial film is vapor-grown on the surface of the substrate wafer. An epitaxial wafer manufacturing method for manufacturing an epitaxial wafer, wherein the susceptor includes a space formed between the substrate wafer and the susceptor when the substrate wafer is placed, and an outside of the susceptor. The communication path is formed so that the opening facing the space and the opening facing the outside of the susceptor do not interfere in a planar manner in the thickness direction of the susceptor, The side surface of the susceptor is formed in a stepped shape in which the cross-sectional area decreases as it goes from the upper side to the lower side. The communication path is formed in the stepped portion, communicates the space portion and the outside of the susceptor, and supplies a reactive gas to the upper surface side of the susceptor when the epitaxial film is vapor-phase grown. A purge gas is supplied to the side surface and / or the lower surface side of the susceptor.
According to the present invention, when the epitaxial film is vapor-phase grown using the susceptor described above, the reactive gas is supplied to the upper surface side of the susceptor and the purge gas is supplied to the side surface and / or the lower surface side of the susceptor. The dopant that diffuses outward from the back surface of the wafer and is released into the space can be well released to the outside of the susceptor via the communication path, and can be easily guided to a location separated from the substrate wafer according to the purge gas flow. Can do. For this reason, it can suppress that a dopant wraps around to the surface side of a substrate wafer, and can manufacture an epitaxial wafer with a uniform in-plane resistivity distribution.
Further, by using the susceptor described above, the temperature of the back surface of the substrate wafer can be made uniform when the epitaxial film is vapor-phase grown, so that an epitaxial wafer having a uniform thickness can be obtained without causing slip dislocation in the substrate wafer. Can be manufactured.

Sectional drawing which shows typically the manufacturing apparatus of the epitaxial wafer which concerns on this invention. The figure which shows schematic structure of the susceptor in 1st Embodiment. The figure for demonstrating the manufacturing method of the epitaxial wafer in 1st Embodiment. The figure which shows schematic structure of the susceptor in 2nd Embodiment. The figure for demonstrating the distribution | circulation state of the purge gas in 2nd Embodiment. The figure which shows schematic structure of the susceptor in 3rd Embodiment. The figure for demonstrating the distribution | circulation state of the purge gas in 3rd Embodiment. The figure which shows schematic structure of the susceptor in 4th Embodiment. The figure which shows schematic structure of the susceptor in 5th Embodiment. The figure for demonstrating the distribution | circulation state of the purge gas in 5th Embodiment. The figure which shows the modification of 1st Embodiment and 2nd Embodiment. The figure which shows the modification of 1st Embodiment and 2nd Embodiment.

[First embodiment]
DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, a first embodiment of the invention will be described with reference to the drawings.
[Configuration of epitaxial wafer manufacturing equipment]
FIG. 1 is a cross-sectional view schematically showing an epitaxial wafer manufacturing apparatus 1 according to the present invention.
The manufacturing apparatus 1 is a single wafer manufacturing apparatus that manufactures an epitaxial wafer EPW by vapor-phase growth of an epitaxial film EP on a substrate wafer W. For example, the manufacturing apparatus 1 vapor-phases an epitaxial film EP (for example, a p-type epitaxial film) on a substrate wafer W (p + type or p ++ type silicon single crystal wafer) containing a dopant in a high concentration. It can be used as a manufacturing apparatus for growing epitaxial wafer EPW. In addition to being used as a manufacturing apparatus for producing an epitaxial wafer EPW by vapor-phase growth of a low-concentration epitaxial film EP on a substrate wafer W having a high dopant concentration, conversely, for example, p / p + type or n / You may utilize as a manufacturing apparatus which manufactures n <+> type epitaxial wafer EPW. As shown in FIG. 1, the manufacturing apparatus 1 includes a susceptor 2, a reaction vessel 3, and a heating device 4.
Although specifically described later, the susceptor 2 is a member on which the substrate wafer W is placed, and is installed inside the reaction vessel 3. As this susceptor 2, what coated the SiC film on the surface of the carbon base material is employable.

The reaction vessel 3 is configured such that the susceptor 2 is installed inside and a reaction gas and a purge gas can be supplied therein. Then, the reactive gas is supplied to the substrate wafer W placed on the susceptor 2, so that the epitaxial film EP is vapor-phase grown on the surface of the substrate wafer W. As shown in FIG. 1, the reaction vessel 3 includes an upper dome 31, a lower dome 32, a dome attachment body 33, and a susceptor support portion 34.
The upper dome 31 and the lower dome 32 are made of a translucent member such as quartz, and are formed in a substantially concave shape in which a substantially central portion in plan view is recessed outward from the inside of the reaction vessel 3.
The dome mounting body 33 is configured by a substantially cylindrical member that is open at the top and bottom, and supports the upper dome 31 and the lower dome 32 at the upper opening and the lower opening. Then, by attaching the upper dome 31 and the lower dome 32 to the dome attachment body 33, a reaction chamber 3A is formed inside the reaction vessel 3 as shown in FIG.
As shown in FIG. 1, the dome mounting body 33 is provided with a reaction gas supply pipe 331, a reaction gas discharge pipe 332, a purge gas supply pipe 333, and a purge gas discharge pipe 334 on its side surface. The reaction gas supply pipe 331, the reaction gas discharge pipe 332, the purge gas supply pipe 333, and the purge gas discharge pipe 334 are formed so as to communicate the reaction chamber 3A and the reaction vessel 3 outside.

The reaction gas supply pipe 331 and the reaction gas discharge pipe 332 are provided so as to face each other above the reaction vessel 3. In such a configuration, when the reaction gas is supplied from the outside of the reaction vessel 3 into the reaction chamber 3A via the reaction gas supply pipe 331, the surface of the substrate wafer W on the susceptor 2 supported by the susceptor support portion 34. The reaction gas flows horizontally, and the reaction gas and the like in the reaction chamber 3 </ b> A are discharged to the outside of the reaction vessel 3 through the reaction gas discharge pipe 332.
Here, as the reaction gas, a material gas mixed with a carrier gas in addition to a source gas for vapor phase growth of the epitaxial film EP can be employed. As the source gas, a gas corresponding to the epitaxial film EP to be vapor-grown may be employed. For example, a mixed reaction gas obtained by diluting SiHCl _{3 as} a silicon source and boron dopant source B ₂ H ₆ with hydrogen gas can be employed. . As the carrier gas, for example, a gas containing hydrogen can be used.

The purge gas supply pipe 333 and the purge gas discharge pipe 334 are provided so as to face the lower side of the reaction vessel 3. In such a configuration, as will be described in detail later, when the purge gas is supplied from the outside of the reaction vessel 3 into the reaction chamber 3A via the purge gas supply pipe 333, the inside of the susceptor 2 supported by the susceptor support portion 34. The purge gas circulated through the susceptor 2 and the purge gas in the reaction chamber 3A are discharged to the outside of the reaction vessel 3 through the purge gas discharge pipe 334.
Here, various types of purge gas can be employed, such as hydrogen gas.

The susceptor support portion 34 is made of a translucent member such as quartz, protrudes from the substantially central portion of the lower dome 32 of the reaction vessel 3 into the reaction chamber 3A, and installs the susceptor 2 in the reaction vessel 3 in a horizontal state. At the same time, the wafer is placed on the susceptor 2. The susceptor support portion 34 is configured to be rotatable about the rotation axis R, for example, under the control of an external control device (not shown). As shown in FIG. 1, the susceptor support portion 34 includes a susceptor support portion main body 341 and a wafer lifting / lowering portion 342.
The susceptor support body 341 includes a base 341A that protrudes into the reaction chamber 3A from a substantially central portion of the lower dome 32, and an inner surface of the dome mounting body 33 in the reaction chamber 3A from the upper end of the base 341A. And three extending portions 341B extending in the approaching direction. And the susceptor support part main body 341 has the front-end | tip part of the three extension parts 341B extended upwards, and supports the lower-surface outer-periphery edge part of the susceptor 2 by this front-end | tip part at three points. The susceptor support part main body 341 supports the susceptor 2 so that the susceptor 2 is installed in a horizontal state in the reaction chamber 3A.
Note that the shape of the susceptor support portion main body 341 is not limited to that described above, and three or more extension portions 341B may be formed, and the extension portion 341B is seen in a plan view extending radially from the upper end of the base portion 341A. You may form so that it may become circular shape.

The wafer elevating part 342 includes a base part 342A formed in a cylindrical shape so as to surround the base end part of the susceptor support part 34, and an inner side surface of the dome mounting body 33 in the reaction chamber 3A from the upper side end part of the base part 342A. And three pin-like members 342C that are attached to the tip portions of the three extending portions and extend upward.
The wafer elevating unit 342 is configured to be rotatable about the rotation axis R and is configured to be movable back and forth in the vertical direction with respect to the susceptor support unit main body 341. Then, as the wafer elevating part 342 moves back and forth in the vertical direction, the tip portion of the pin-shaped member 342C comes into contact with the substrate wafer W through a pin insertion hole described later of the susceptor 2, and the substrate wafer W is moved in the vertical direction. Move.
That is, in the manufacturing apparatus 1 of the present embodiment, the transfer method between the transfer jig (not shown) for carrying in and out of the wafer to the manufacturing apparatus 1 and the susceptor 2 supports the lower surface of the wafer with the pin-shaped member 342C. A wafer is transferred by moving the wafer lifting / lowering unit 342 back and forth.
Note that the wafer lifting / lowering unit 342 is omitted, and the wafer is transferred by the Bernoulli chuck method or the lifting / lowering method of the transfer jig as the transfer method between the transfer jig and the susceptor 2 for carrying the wafer in and out of the manufacturing apparatus 1. You may employ | adopt the type to mount.

  The heating device 4 is disposed on the upper side and the lower side of the reaction vessel 3, respectively, and the substrate wafer W placed on the susceptor 2 and the susceptor via the upper dome 31 and the lower dome 32 of the reaction vessel 3. 2 is heated by radiant heat, and the substrate wafer W is set to a predetermined temperature. As the heating device 4, for example, a halogen lamp or an infrared lamp can be employed.

[Structure of susceptor]
FIG. 2 is a diagram showing a schematic configuration of the susceptor 2. Specifically, FIG. 2A is a top view of the susceptor 2. FIG. 2B is a side view of the susceptor 2. FIG. 2C is a cross-sectional view taken along line AA in FIG.
As shown in FIG. 2, the susceptor 2 has a substantially disk shape in plan view, and is constituted by a hollow member having a hollow portion 21 (FIG. 2C) inside, and supports the substrate wafer W over the entire circumference. To do.
In the susceptor 2, a concave portion 22 having a circular shape in plan view corresponding to the outer shape of the substrate wafer W is formed on the upper surface of the susceptor 2, as shown in FIG. 2 (A) or 2 (C). The substrate wafer W is placed inside the recess 22.

As shown in FIG. 2 (A) or FIG. 2 (C), the concave portion 22 includes an annular first concave portion 221 that supports the entire outer peripheral edge portion of the back surface of the substrate wafer W, and a center side of the first concave portion 221. It is formed in a stepped shape having a second recess 222 having a circular shape in plan view located at the lower stage. When the substrate wafer W is supported by the first recess 221, the back surface of the substrate wafer W and the bottom surface of the second recess 222 are separated from each other, and the space portion 223 ( 3) is formed.
Further, as shown in FIG. 2 (A) or 2 (C), a plurality of first communication holes penetrated toward the hollow portion 21 along the outer periphery on the bottom surface of the second recess 222. 23 is formed. In the present embodiment, a total of twelve communication holes 23 are formed along the outer periphery. The number of the communication holes 23 is not limited to this, and it is sufficient that at least one communication hole 23 is formed. Further, the communication hole 23 is preferably formed by a hole smaller than a pin insertion hole 25 described later, for example, a hole having a diameter of 2 mm or less. Further, the plurality of communication holes 23 are preferably formed at equal intervals.

Further, in the susceptor 2, a plurality of second communication holes 24 penetrating toward the internal hollow portion 21 are formed on the lower side of the side surface as shown in FIG. 2 (B) or 2 (C). Is formed. In the present embodiment, a total of twelve communication holes 24 are formed on the entire circumference of the side surface. Note that the number of the communication holes 24 is not limited to the same as the communication holes 23, and it is sufficient that at least one communication hole 24 is formed. The plurality of communication holes 24 are preferably formed at equal intervals.
That is, in the above-described configuration, the communication holes 23 and 24 and the hollow portion 21 form a plurality of communication paths 20 that communicate the space 223 (see FIG. 3) and the outside of the susceptor 2. Further, the communication holes 23 and 24 are configured such that their openings do not interfere with each other in the thickness direction of the susceptor 2, unlike a conventional through-hole penetrating in the thickness direction of the susceptor. That is, when one communication hole of the communication holes 23 and 24 is viewed from the thickness direction of the susceptor 2, the other communication hole cannot be seen in plan view.

  Further, in this susceptor 2, the bottom surface of the second recess 222 and the lower surface of the susceptor 2 penetrate toward the hollow portion 21 inside as shown in FIG. 2 (A) or FIG. 2 (C), Three pin insertion holes 25 are formed through which the pin-like member 342C of the wafer elevating part 342 constituting the susceptor support part 34 can be inserted.

[Method of manufacturing epitaxial wafer]
Next, a manufacturing method of the epitaxial wafer EPW by the manufacturing apparatus 1 described above will be described.
FIG. 3 is a diagram for explaining a method of manufacturing the epitaxial wafer EPW.
First, the substrate wafer W is placed in the first recess 221 of the susceptor 2 by moving a transfer jig (not shown) and moving the pin-shaped member 342C of the wafer lifting / lowering part 342 forward and backward by the wafer transfer method described above. To do.
Next, the heating device 4 is driven to heat the substrate wafer W to a desired growth temperature.

Then, as shown below, the epitaxial film EP is vapor-phase grown on the substrate wafer W while rotating the susceptor support 34 around the rotation axis R.
That is, the reaction gas is horizontally supplied onto the surface of the substrate wafer W via the reaction gas supply pipe 331, and at least one communication hole 24 formed on the side surface of the susceptor 2 is provided via the purge gas supply pipe 333. The purge gas is introduced into the hollow portion 21 of the susceptor 2 through the via.
Specifically, by controlling the flow rate of the reactive gas and the flow rate of the purge gas, the reactive gas flow in which the reactive gas flows above the substrate wafer W as shown in FIG. 3 during the vapor phase growth of the epitaxial film EP. G1 is formed, and a purge gas flow G2 in which the purge gas flows through the lower side of the substrate wafer W, that is, inside the susceptor 2 is formed. By performing vapor phase growth in this way, an epitaxial film EP is formed on the surface of the substrate wafer W, and the epitaxial wafer EPW is manufactured.

  By the way, since the substrate wafer W is heated during the vapor phase growth of the epitaxial film EP, the dopant P contained in the substrate wafer W is diffused outward and released into the vapor phase. Further, since the reaction gas and the purge gas that are circulated during the vapor phase growth contain, for example, hydrogen, the substrate wafer W is slightly etched by this hydrogen and the dopant P is released into the vapor phase. Further, immediately before the vapor phase growth, for example, hydrogen chloride gas is allowed to flow on the surface of the substrate wafer W to perform the vapor phase etching to remove the natural oxide film on the surface of the substrate wafer W, so that the substrate wafer W is slightly etched. Thus, the dopant P is also released into the gas phase during the gas phase etching.

  The dopant P released from the back surface side of the substrate wafer W into the space portion 223 is hollowed through the communication hole 23 by the purge gas flow G2 flowing through the hollow portion 21 of the susceptor 2 as shown in FIG. It is drawn into the part 21. The dopant P drawn into the hollow portion 21 is temporarily accumulated in the hollow portion 21 and taken into the purge gas flow G2. The dopant P taken in the purge gas flow G2 flows out of the susceptor 2 through the other communication holes 24 except for the communication holes 24 through which the purge gas flows together with the purge gas of the purge gas flow G2, and through the purge gas discharge pipe 334. The reaction vessel 3 is discharged outside. That is, the dopant P released into the space 223 is released to the outside of the susceptor 2 through the plurality of communication paths 20.

  As described above, after manufacturing the epitaxial wafer EPW, the pin-shaped member 342C of the wafer lifting / lowering portion 342 is moved forward and backward, and the transfer jig (not shown) is moved to carry the epitaxial wafer EPW out of the reaction vessel 3.

The first embodiment described above has the following effects.
(1) Since the susceptor 2 has the space portion 223 and a plurality of communication passages 20 that communicate with the outside of the susceptor 2, when the epitaxial film EP is vapor-phase grown, the susceptor 2 moves outward from the back surface of the substrate wafer W. The dopant P diffused and released into the space portion 223 can be released to the outside of the susceptor 2 through the plurality of communication paths 20. For this reason, it can suppress that the dopant P goes around to the surface side of the substrate wafer W, and can suppress generation | occurrence | production of an auto dope phenomenon efficiently. Therefore, an epitaxial wafer EPW having a uniform in-plane resistivity distribution can be manufactured.

(2) Since the communication holes 23 and 24 are formed so as to penetrate the bottom surface of the second recess 222 and the side surface of the susceptor 2, the openings do not interfere with each other in the thickness direction of the susceptor 2. For this reason, the emitted light from the heating device 4 is not directly irradiated onto a part of the back surface of the substrate wafer W through the communication holes 23 and 24, and the temperature of the entire back surface of the substrate wafer W can be made uniform. Therefore, an epitaxial wafer EPW having a uniform thickness can be manufactured without causing slip dislocation in the substrate wafer W.

(3) Since the susceptor 2 is composed of a hollow member having a hollow portion 21 therein, when the epitaxial film EP is vapor-phase grown, it is diffused outward from the back surface of the substrate wafer W and released into the space portion 223. The dopant P to be formed can be temporarily accumulated in the hollow portion 21 through the communication hole 23. Further, since the communication hole 24 is formed to communicate the hollow portion 21 and the outside of the susceptor 2, the dopant P temporarily accumulated in the hollow portion 21 can be released to the outside of the susceptor 2. As described above, by temporarily storing the dopant P in the hollow portion 21, the amount of the dopant P that wraps around the surface side of the substrate wafer W can be reduced, and the occurrence of the auto-doping phenomenon can be more efficiently suppressed.

(4) At the time of vapor phase growth of the epitaxial film EP, the purge gas is introduced into the hollow portion 21 through at least one communication hole 24 formed on the side surface of the susceptor 2. The dopant P temporarily accumulated in the hollow portion 21 can be easily taken into the purge gas flow G2. Further, the dopant P taken in the purge gas flow G2 can be released to the outside of the susceptor 2 through the other communication holes 24 except for the communication holes 24 for introducing the purge gas into the hollow portion 21, so that the purge gas flow G2 flows. Therefore, it can be discharged out of the reaction vessel 3 through the purge gas discharge pipe 334. Therefore, the occurrence of the auto-doping phenomenon can be further effectively suppressed, and an epitaxial wafer EPW having a more uniform in-plane resistivity distribution can be manufactured.

(5) Since the communication hole 24 penetrates the side surface of the susceptor 2 and does not penetrate the lower surface of the susceptor 2, the lower surface of the susceptor 2 is uniformly irradiated with the emitted light from the heating device 4. Become. For this reason, a temperature difference does not occur on the lower surface of the susceptor 2. Therefore, the in-plane thermal stress generated on the lower surface of the susceptor 2 is not deformed or broken, so that the substrate wafer W can be well supported when the epitaxial wafer EPW is manufactured, and the epitaxial wafer EPW is manufactured well. it can.
(6) Since the susceptor 2 supports the substrate wafer W over the entire circumference, the occurrence of slip dislocations in the substrate wafer W can be effectively suppressed.

[Second Embodiment]
Next, 2nd Embodiment of this invention is described based on drawing.
In the following description, the same structure and the same members as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted or simplified.
FIG. 4 is a diagram showing a schematic configuration of the susceptor 2A in the second embodiment. Specifically, FIG. 4A is a top view of the susceptor 2A. FIG. 4B is a bottom view of the susceptor 2A. FIG. 4C is a cross-sectional view taken along line BB in FIG.
As shown in FIG. 4, the susceptor 2 </ b> A has a disk shape in plan view, and includes a hollow portion 21 and a concave portion 22 (first concave portion 221 and second concave portion 222) similar to the susceptor 2 described in the first embodiment. ), A plurality of communication holes 23 and three pin insertion holes 25, and supports the substrate wafer W over the entire circumference.
Further, in the susceptor 2A, as shown in FIG. 4B, the plurality of second communication holes 24A are formed at predetermined intervals along the outer periphery in the vicinity of the outer peripheral end portion of the lower surface. In the present embodiment, a total of twelve communication holes 24A are formed along the outer periphery. The number of communication holes 24A is not limited to this, and it is sufficient that at least one communication hole 24A is formed. Further, the plurality of communication holes 24A are preferably formed so as to be positioned on the outer peripheral side with respect to the size of the substrate wafer W, as shown in FIG.
That is, in the above-described configuration, the substrate wafer W and the second recess are supported by the first recess 221 by the communication holes 23 and 24A and the hollow portion 21 in substantially the same manner as in the first embodiment. A plurality of communication passages 20 </ b> A are formed to communicate with the space 223 (see FIG. 5) that is formed with 222 and the outside of the susceptor 2. Also, like the first embodiment, the communication holes 23 and 24A are different from the conventional through holes penetrating in the thickness direction of the susceptor, and the openings do not interfere with each other in the thickness direction of the susceptor 2A. It has become. That is, when one communication hole of the communication holes 23 and 24A and the other communication hole are viewed from the thickness direction of the susceptor 2, the other communication hole cannot be seen in plan view.

Next, a method for manufacturing the epitaxial wafer EPW in the second embodiment will be described. The manufacturing method of the epitaxial wafer EPW in the second embodiment can be performed in substantially the same manner as the manufacturing method described in the first embodiment, and only the flow state of the purge gas is different. Only the state will be described.
FIG. 5 is a diagram for explaining the flow state of the purge gas in the second embodiment.
At the time of vapor phase growth of the epitaxial film EP, as shown in FIG. 5, the reaction gas is horizontally supplied onto the surface of the substrate wafer W through the reaction gas supply pipe 331 to form the reaction gas flow G1, and the purge gas supply pipe A purge gas is supplied horizontally to the lower surface of the susceptor 2A via 333 to form a purge gas flow G3.

  At this time, as shown in FIG. 5, the dopant P released from the back surface side of the substrate wafer W into the space portion 223 is hollowed through the communication hole 23 by the purge gas flow G3 flowing below the susceptor 2A. 21 is drawn into. The dopant P attracted into the hollow portion 21 is temporarily accumulated in the hollow portion 21 and flows out of the hollow portion 21 through the communication hole 24A by the purge gas flow G3 flowing below the susceptor 2A. And is taken into the purge gas flow G3. The dopant P taken in the purge gas flow is discharged to the outside of the reaction vessel 3 through the purge gas discharge pipe 334 together with the purge gas of the purge gas flow G3. That is, the dopant P released into the space 223 is released to the outside of the susceptor 2A through the plurality of communication paths 20A.

According to the second embodiment described above, even when the susceptor 2A in which the communication hole 24A is formed on the lower surface is adopted, substantially the same effects as the above-described (1) to (4) and (6) of the first embodiment. Can be obtained. In addition to these effects, there are the following effects.
(7) Compared to the susceptor 2 described in the first embodiment, since the communication hole 24A is formed on the lower surface of the susceptor 2A, the total opening area of the communication hole 24A can be increased. Even when it is formed on the lower surface, it is possible to improve the discharge efficiency of the dopant P released from the hollow portion 21 to the outside of the susceptor 2A.

[Third embodiment]
Next, 3rd Embodiment of this invention is described based on drawing.
In the following description, the same structure and the same members as those in the first embodiment are denoted by the same reference numerals, and detailed description thereof is omitted or simplified.
FIG. 6 is a diagram showing a schematic configuration of a susceptor 2B in the third embodiment. Specifically, FIG. 6A is a top view of the susceptor 2B. FIG. 6B is a bottom view of the susceptor 2B. FIG. 6C is a cross-sectional view taken along line CC in FIG.
As shown in FIG. 6, the susceptor 2B has a disk shape in plan view and supports the substrate wafer W over the entire circumference. The side surface is formed in a stepped shape whose cross-sectional area decreases as it goes from the upper side to the lower side, and has a stepped portion 26. In addition, as shown in FIG. 6B or FIG. 6C, the stepped portion 26 is formed in a tapered shape whose cross-sectional area increases as it goes downward.

As shown in FIG. 6A or 6C, the susceptor 2B includes a recess 22 (a first recess 221 and a second recess 222) as in the susceptor 2 described in the first embodiment. ) Is formed. In addition, three pin insertion holes 25 are formed so as to penetrate the front and back surfaces, similarly to the susceptor 2 described in the first embodiment.
In addition, as shown in FIG. 6, the susceptor 2 </ b> B is formed with a plurality of communication paths 20 </ b> B penetrating the bottom surface of the second recess 222 and the stepped portion 26.
One end of each communication path 20 </ b> B is formed on the outer peripheral side of the bottom surface of the second recess 222, and the other end is formed at the base end portion of the stepped portion 26. In the present embodiment, a total of twelve communication paths 20 </ b> B are formed along the outer periphery of the bottom surface of the second recess 222 and on the entire periphery of the stepped portion 26. Note that the number of communication paths 20B is not limited to this, and it is sufficient that at least one communication path 20B is formed. Further, the plurality of communication paths 20B are preferably formed at equal intervals. Furthermore, these communication paths 20B are formed so that one end side formed on the bottom surface of the second recess 222 is a hole smaller than the pin insertion hole 25, for example, a hole having a diameter of 2 mm or less. It is preferable that the other end formed in the part is formed to be a hole having a larger diameter than the one end. In particular, it is preferable that the other end side of the communication path 20B is formed to be a hole having a diameter close to the thickness of the susceptor 2B within a range where there is no problem in the strength of the susceptor 2B. The communication path 20B is preferably a through hole.
That is, in the configuration described above, a space formed by the substrate wafer W and the second recess 222 in a state where the substrate wafer W is supported by the first recess 221 by the communication path 20B, as in the first embodiment. The part 223 (see FIG. 7) communicates with the outside of the susceptor 2B. Similarly to the first embodiment, the communication path 20B is different from a conventional through-hole penetrating in the thickness direction of the susceptor, and has an opening formed on the bottom surface of the second recess 222 on the one end side and the other end. The opening formed in the stepped portion 26 on the side does not interfere in a planar manner in the thickness direction of the susceptor 2B. That is, the communication path 20B is configured such that the opening on the other end side cannot be seen in plan view when the opening on the other end side from the opening on the one end side is viewed from the thickness direction of the susceptor 2B.

Next, a method for manufacturing the epitaxial wafer EPW in the third embodiment will be described. The manufacturing method of the epitaxial wafer EPW in the third embodiment can be performed in substantially the same manner as the manufacturing method described in the third embodiment, and only the flow state of the purge gas is different. Only the state will be described.
FIG. 7 is a view for explaining the flow state of the purge gas in the third embodiment.
Similar to the first embodiment, by controlling the flow rate of the reactive gas and the flow rate of the purge gas, the vapor phase growth of the epitaxial film EP can be performed via the reactive gas supply pipe 331 as shown in FIG. A reaction gas is supplied horizontally on the surface of the substrate to form a reaction gas flow G1, and a purge gas is supplied to the side surface of the susceptor 2B through a purge gas supply pipe 333. Then, a part of the purge gas supplied to the side surface of the susceptor 2B circulates in the space 223 via at least one communication passage 20B formed on the purge gas supply pipe 333 side as shown in FIG. Circulates outside the susceptor 2B through the communication path 20B. Then, as shown in FIG. 7, a purge gas flow G4 is formed. Further, the other purge gas supplied to the side surface of the susceptor 2B flows along the lower surface of the susceptor 2B as shown in FIG. Then, as shown in FIG. 7, a purge gas flow G5 is formed.

At this time, as shown in FIG. 7, a part of the dopant P released from the back surface side of the substrate wafer W into the space portion 223 is taken into the purge gas flow G4 flowing through the space portion 223, and the purge gas flow G4 Together with the purge gas, it flows out of the susceptor 2B through the other communication passage 20B except the communication passage 20B through which the purge gas flows, and is discharged out of the reaction vessel 3 through the purge gas discharge pipe 334.
The other dopant P released from the back surface side of the substrate wafer W into the space 223 is not specifically shown, but purge gas is caused to flow in by a purge gas flow G5 flowing along the lower surface of the susceptor 2B. It is drawn to the outside of the susceptor 2B through the other communication path 20B excluding the communication path 20B. Then, together with the purge gas of the purge gas flow G5, it is discharged out of the reaction vessel 3 through the purge gas discharge pipe 334.

According to the above-described third embodiment, even when the susceptor 2B having no hollow portion 21 is employed, substantially the same as the above-described (1), (2), (5), and (6) of the first embodiment. The effect of can be obtained. In addition to these effects, there are the following effects.
(8) Since the communication path 20B is formed so as to penetrate the bottom surface of the second recess 222 and the stepped portion 26, the dopant P released from the stepped portion 26 side to the outside of the susceptor 2B via the communication path 20B The upper side of 2B has a structure that is less likely to go around to the surface side of the substrate wafer W. For this reason, generation | occurrence | production of an auto dope phenomenon can be suppressed further efficiently.

(9) At the time of vapor phase growth of the epitaxial film EP, the purge gas is introduced into the space portion 223 through at least one communication path 20B formed in the step portion 26 of the susceptor 2B. The dopant P diffused outward from the whole and released into the space 223 can be easily taken into the purge gas flow G4. Further, the dopant P taken into the purge gas flow G4 can be released to the outside of the susceptor 2B through the other communication passage 20B except the communication passage 20B through which the purge gas flows, and the purge gas is discharged according to the flow of the purge gas flow G4, G5. It can be discharged out of the reaction vessel 3 via the tube 334. Therefore, the dopant P released from the substrate wafer W into the space 223 can be quickly discharged out of the reaction vessel 3, and the remaining amount of dopant P in the reaction chamber 3A can be reduced.

[Fourth embodiment]
Next, 4th Embodiment of this invention is described based on drawing.
In the following description, the same structure and the same members as those in the third embodiment are denoted by the same reference numerals, and detailed description thereof is omitted or simplified.
FIG. 8 is a diagram showing a schematic configuration of a susceptor 2C in the fourth embodiment. Specifically, FIG. 8A is a top view of the susceptor 2C. FIG. 8B is a side view of the susceptor 2B. FIG. 8C is a cross-sectional view taken along the line DD in FIG.
The susceptor 2 </ b> C is the same as the susceptor 2 </ b> B described in the third embodiment except that the side surfaces are substantially flush with each other, and the same recess 22 (the first recess 221 and the second recess) as the susceptor 2 </ b> B. 222) and three pin insertion holes 25 and a plurality of communication paths 20B, and supports the substrate wafer W over the entire circumference.
Among these, the communication path 20B in the fourth embodiment penetrates the side surface of the susceptor 2C and the bottom surface of the second recess 222, and thus is more horizontal than the communication path 20B described in the third embodiment. The length dimension is longer.

  Note that the manufacturing method of the epitaxial wafer EPW and the flow state of the purge gas in the fourth embodiment are substantially the same as the manufacturing method and the flow state described in the third embodiment, and a description thereof will be omitted.

According to the above-described fourth embodiment, substantially the same effects as the above-described (1), (2), (5), (6), and (9) of the third embodiment can be obtained. In addition to these effects, there are the following effects.
(10) Since the side surface of the susceptor 2C is substantially flush without having the step portion 26, the communication path 20B has a longer horizontal dimension than the communication path 20B described in the third embodiment. Can be formed. For this reason, the purge gas supplied from the purge gas supply pipe 333 can be easily introduced into the communication path 20B, that is, the flow rate of the purge gas flowing through the space 223 can be increased. Accordingly, the dopant P released from the substrate wafer W into the gas phase can be more easily taken into the purge gas flow G4, and can be quickly discharged outside the reaction vessel 3 in accordance with the purge gas flows G4 and G5. .

[Fifth Embodiment]
Next, a fifth embodiment of the present invention will be described with reference to the drawings.
In the following description, the same structure and the same members as those in the fourth embodiment are denoted by the same reference numerals, and detailed description thereof is omitted or simplified.
FIG. 9 is a diagram showing a schematic configuration of a susceptor 2D in the fifth embodiment. Specifically, FIG. 9A is a top view of the susceptor 2D. FIG. 9B is a side view of the susceptor 2D. FIG. 9C is a cross-sectional view taken along line EE in FIG.
The susceptor 2D is the same as the susceptor 2C described in the fourth embodiment except for the position where the communication path 20D is formed, and the same recess 22 (including the first recess 221 and the second recess 222) as the susceptor 2C, and A pin insertion hole 25 is provided to support the substrate wafer W over the entire circumference.
Among these, the thickness dimension between the bottom surface of the second recess 222 and the lower surface of the susceptor 2D in the fifth embodiment is the same as that of the second recess 222 described in the fourth embodiment, as shown in FIG. It is formed to be smaller than the thickness dimension between the bottom surface and the lower surface of the susceptor 2C.

As shown in FIG. 9, the plurality of communication paths 20 </ b> D are formed so as to penetrate the side wall of the second recess 222 and the side surface of the susceptor 2 </ b> D and to be continuous with the bottom surface of the second recess 222. In the present embodiment, a total of twelve communication paths 20D are formed along the side wall of the second recess 222 and the entire side surface of the susceptor 2D. The number of communication paths 20D is not limited to this, and it is sufficient that at least one communication path 20C is formed. The plurality of communication paths 20D are preferably formed at equal intervals. The plurality of communication paths 20D are preferably through holes.
That is, in the configuration described above, the space formed by the substrate wafer W and the second recess 222 in a state where the substrate wafer W is supported by the first recess 221 by the communication path 20D, as in the fourth embodiment. The portion 223 (see FIG. 10) communicates with the outside of the susceptor 2D. Similarly to the first embodiment, the communication path 20D is different from a conventional through-hole penetrating in the thickness direction of the susceptor, and has an opening formed on the side wall of the second recess 222 on the one end side and the other end. The opening formed on the side surface of the susceptor 2D on the side does not interfere with the thickness direction of the susceptor 2D in a planar manner. That is, the communication path 20D has a configuration in which the opening on the other end side cannot be seen in plan view when the opening on the other end side from the opening on the one end side is viewed from the thickness direction of the susceptor 2D.

Next, a method for manufacturing the epitaxial wafer EPW in the fifth embodiment will be described. The manufacturing method of the epitaxial wafer EPW in the fifth embodiment can be performed in substantially the same manner as the manufacturing method described in the fourth embodiment, and only the flow state of the purge gas is different. Only the state will be described.
FIG. 10 is a view for explaining the flow state of the purge gas in the fifth embodiment.
As in the first embodiment, by controlling the flow rate of the reactive gas and the flow rate of the purge gas, the substrate wafer is formed via the reactive gas supply pipe 331 during the vapor phase growth of the epitaxial film EP as shown in FIG. A reactive gas is supplied horizontally on the surface of W to form a reactive gas flow G1, and a purge gas is supplied to the side surface of the susceptor 2D through a purge gas supply pipe 333. As shown in FIG. 10, the purge gas supplied to the side surface of the susceptor 2D flows without bending in the space 223 via at least one communication path 20D formed on the purge gas supply pipe 333 side. It circulates outside the susceptor 2D via the communication path 20D. Then, as shown in FIG. 10, a purge gas flow G6 is formed.

  At this time, as shown in FIG. 10, the dopant P released from the back side of the substrate wafer W into the space portion 223 is taken into the purge gas flow G6 flowing through the space portion 223, and together with the purge gas of the purge gas flow G6, It flows out of the susceptor 2D through the other communication passages 20D except the communication passage 20D through which the purge gas flows, and is discharged out of the reaction vessel 3 through the purge gas discharge pipe 334.

According to the fifth embodiment described above, it is possible to obtain substantially the same effects as the above-described (1), (2), (5), (6), (9), and (10) of the fourth embodiment. . In addition to these effects, there are the following effects.
(11) Since the plurality of communication paths 20D are formed so as to penetrate the side wall of the second recess 222 and the side surface of the susceptor 2D and to be continuous with the bottom surface of the second recess 222, the communication path 20D Thus, the purge gas introduced into the space 223 can be smoothly circulated in the susceptor 2D without being bent. For this reason, the flow rate of the purge gas flow G6 does not change. Accordingly, the dopant P released from the substrate wafer W into the gas phase can be further easily taken into the purge gas flow G6, and can be quickly discharged outside the reaction vessel 3 in accordance with the flow of the purge gas flow G6. Further, the dopant P released from the substrate wafer W into the gas phase can be discharged outside the susceptor 2D without flowing out to the substrate wafer W side.

Although the present invention has been described with reference to preferred embodiments, the present invention is not limited to these embodiments, and various improvements and design changes can be made without departing from the scope of the present invention. It is.
In each of the embodiments described above, the mounting portion is configured by the concave portion 22. However, the configuration is not limited thereto, and a configuration in which the substrate wafer W is directly mounted on the upper surface without forming the first concave portion 221 may be adopted. Good. Even when such a configuration is adopted, the object of the present invention can be sufficiently achieved.

In the first embodiment and the second embodiment, the formation position and the number of the first communication holes 23 are not limited to the formation position and the number described in the first embodiment and the second embodiment.
For example, as shown in FIG. 11, the first communication hole 23 </ b> A may be formed uniformly over the entire bottom surface of the second recess 222. In FIG. 11, only some of the communication holes 23A are denoted by reference numerals. When the communication hole 23A is employed in the susceptor 2A of the second embodiment, the opening of the communication hole 23A and the opening of the second communication hole 24A formed on the lower surface of the susceptor 2A are the thickness of the susceptor 2A. The communication holes 24A may be formed over the entire lower surface of the susceptor 2A in the same manner as the communication holes 23A.
Further, for example, as shown in FIG. 12, a configuration in which the first communication hole 23B is formed on the entire bottom surface of the second recess 222, that is, only one communication hole 23B may be formed. FIG. 12A shows a configuration in which a communication hole 23B is adopted in the susceptor 2 of the first embodiment. FIG. 12B shows a configuration in which a communication hole 23B is adopted in the susceptor 2A of the second embodiment.
In the configuration shown in FIGS. 11 and 12 as described above, during the vapor phase growth of the epitaxial film EP, the dopant P which is diffused outward from substantially the entire back surface of the substrate wafer W and released into the vapor phase is satisfactorily hollow 21. Can be released.

  In the third to fifth embodiments, the communication paths 20B and 20D are configured such that the other ends of the communication paths 20B and 20D are formed on the side surfaces of the susceptors 2B, 2C and 2D. Not limited to this, a configuration formed on the lower surfaces of the susceptors 2B, 2C, and 2D may be employed in substantially the same manner as in the second embodiment. At this time, in the communication passages 20B and 20D, the opening on one end side formed in the recess 22 and the opening on the other end side formed on the lower surface do not interfere with each other in the thickness direction of the susceptors 2B, 2C and 2D. What is necessary is just to form.

  In the third embodiment, the step portion 26 is formed over the entire circumference of the side surface. However, the present invention is not limited to this, and the dopant P released from the step portion 26 side through the communication path 20B is the susceptor 2B. It is only necessary to prevent the upper side from going around to the surface side of the substrate wafer W, and the stepped portion 26 may be formed only in a portion where the communication path 20B is formed.

  In each embodiment, the manufacturing apparatus 1 is not limited to the structure and shape described in each embodiment. For example, in the manufacturing apparatus 1, the reaction gas discharge pipe 332 and the purge gas discharge pipe 334 are formed. However, the present invention is not limited to this, and only one discharge pipe is formed, and both the reaction gas and the purge gas are discharged collectively. You may employ | adopt the structure to do.

Although the best configuration for carrying out the present invention has been disclosed in the above description, the present invention is not limited to this. That is, the invention has been illustrated and described primarily with respect to particular embodiments, but may be configured for the above-described embodiments without departing from the scope and spirit of the invention. Various modifications can be made by those skilled in the art in terms of materials, quantity, and other detailed configurations.
Therefore, the description limited to the shape, material, etc. disclosed above is an example for easy understanding of the present invention, and does not limit the present invention. The description by the name of the member which remove | excluded the limitation of one part or all of such is included in this invention.

  The susceptor of the present invention is useful as a susceptor used in a manufacturing apparatus for manufacturing an epitaxial wafer because it can suppress the occurrence of an autodoping phenomenon and secure the reliability of the epitaxial wafer when manufacturing an epitaxial wafer.

DESCRIPTION OF SYMBOLS 1 ... Manufacturing apparatus 2, 2A, 2B, 2C, 2D ... Susceptor 3 ... Reaction container 4 ... Heating device 20, 20A, 20B, 20D ... Communication path 21 ... Hollow part 23 , 23A, 23B ... 1st communication hole 24, 24A ... 2nd communication hole 26 ... Step part 221 ... 1st recessed part 222 ... 2nd recessed part 223 ... Space part EP ... Epitaxial film EPW ... Epitaxial wafer W ... Substrate wafer

Claims (4)

A susceptor on which the substrate wafer is placed when producing an epitaxial wafer by vapor-phase growth of an epitaxial film on the surface of the substrate wafer,
Having at least one communication path that communicates the space formed between the substrate wafer and the susceptor and the outside of the susceptor when the substrate wafer is placed;
The communication path is formed so that the opening facing the space portion and the opening facing the outside of the susceptor do not interfere planarly in the thickness direction of the susceptor,
The side surface portion of the susceptor is formed in a stepped shape in which the cross-sectional area is reduced from the upper side toward the lower side, and has a step portion.
The susceptor is characterized in that the communication path is formed in the stepped portion and communicates the space and the outside of the susceptor. The susceptor according to claim 1,
The stepped portion is formed in a tapered shape whose cross-sectional area increases as it goes downward. An epitaxial wafer manufacturing apparatus for manufacturing an epitaxial wafer by vapor-phase growth of an epitaxial film on a surface of a substrate wafer,
The susceptor according to claim 1 or 2,
A reaction vessel in which the susceptor is installed and capable of supplying a reaction gas for vapor-phase growth of an epitaxial film on the surface of the substrate wafer;
An apparatus for manufacturing an epitaxial wafer, comprising: a heating device for heating the substrate wafer when the epitaxial film is vapor-phase grown. A substrate wafer is placed on a susceptor, a reaction gas is supplied to the substrate wafer while heating the substrate wafer on the susceptor, and an epitaxial film is grown on the surface of the substrate wafer to produce an epitaxial wafer. An epitaxial wafer manufacturing method comprising:
The susceptor has at least one communication path that communicates the space formed between the substrate wafer and the susceptor and the outside of the susceptor when the substrate wafer is placed;
The communication path is formed so that the opening facing the space portion and the opening facing the outside of the susceptor do not interfere planarly in the thickness direction of the susceptor,
The side surface portion of the susceptor is formed in a stepped shape in which the cross-sectional area is reduced from the upper side toward the lower side, and has a step portion.
The communication path is formed in the stepped portion, and communicates the space portion and the outside of the susceptor,
A method of manufacturing an epitaxial wafer, comprising: supplying a reactive gas to the upper surface side of the susceptor and supplying a purge gas to a side surface and / or a lower surface side of the susceptor when the epitaxial film is grown in a vapor phase.

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