JP5178177B2 - Method and apparatus for manufacturing optical processing substrate - Google Patents

Description

  The present invention relates to a method and an apparatus for manufacturing an optical processing substrate, and more particularly, a boundary region between partial regions when irradiation with a processing light spot is repeated for each partial region obtained by dividing the region desired to be optically processed on the substrate. However, the present invention relates to a method and an apparatus for manufacturing an optical processing substrate capable of performing optical processing equivalent to the central portion of the partial region.

Conventionally, one of the partial areas is irradiated with a laser beam spot smaller than the partial area obtained by dividing the area of the substrate to be laser annealed into a plurality of partial areas, and then the edge of the laser light spot is also present in the boundary area between adjacent partial areas. There is known a laser annealing treatment apparatus for manufacturing a laser annealing substrate by irradiating a laser beam spot to an adjacent partial region while adjusting the position so as to hit, and repeating this in order (see, for example, Patent Document 1).
On the other hand, a method for manufacturing a compound semiconductor device is known in which an annealing process is performed by irradiating an annealed semiconductor layer with energy waves, detecting the wavelength and spectrum of the generated fluorescence (see, for example, Patent Document 2).
Also, a polysilicon thin film crystallinity evaluation apparatus is known that irradiates a polysilicon thin film sample with excitation light, detects the spectrum of photoluminescence light generated in the thin film sample, and evaluates the crystallization state from the spectrum. (For example, refer to Patent Document 3).
Japanese Unexamined Patent Publication No. 09-219379 (FIG. 9) Japanese Patent Laying-Open No. 2005-033188 (FIGS. 3 and 4) Japanese Patent Laying-Open No. 2007-255893 (FIG. 4)

In the conventional laser annealing treatment apparatus described above, in order to perform crystallization and activation equivalent to the central part of the partial area where the laser light intensity is uniform even in the boundary area where the laser light intensity is not uniform, the laser light intensity in the boundary area is reduced. An intensity distribution adjuster to be adjusted was provided.
However, the intensity distribution adjuster installed in a fixed manner has a problem that it cannot cope with a positional change of the boundary region due to a positional deviation of the substrate or a thermal deformation, a thickness change or a composition change of the processing target film.
On the other hand, the conventional method for manufacturing a compound semiconductor device and the polysilicon thin film crystallinity evaluation apparatus have not been configured to cope with the positional shift of the boundary region due to the positional deviation of the substrate or thermal deformation.
Therefore, an object of the present invention is to optically process the boundary region in the same way as the central portion of the partial region even if there is a positional variation of the boundary region due to a substrate displacement or thermal deformation, and a change in the thickness or composition of the film to be processed. An object of the present invention is to provide a method and an apparatus for manufacturing an optical processing substrate.

In a first aspect, the present invention irradiates one of the partial areas with a processing light spot smaller than a partial area obtained by dividing the area of the substrate to be optically processed into a plurality of areas, and then irradiates a boundary area between adjacent partial areas. In the method of manufacturing an optical processing substrate in which the processing light spot is irradiated to an adjacent partial region while adjusting the position so that the end of the processing light spot hits, and the optical processing substrate is manufactured by repeating this in order. A method of manufacturing a light processing substrate, comprising: irradiating a region with excitation light and detecting fluorescence to measure a degree of light processing in the boundary region; and adjusting a position of the processing light spot based on the measurement result I will provide a.
In the manufacturing method of the optical processing substrate according to the first aspect, the boundary region between the irradiated partial region and the non-irradiated partial region is irradiated with excitation light, and the generated fluorescence is detected, and the optical processing of the boundary region is performed. Measure. The extent of the optical processing of the boundary region reflects the positional variation of the boundary region due to the positional deviation of the substrate and thermal deformation, and the thickness change and composition change of the processing target film. For this reason, if light irradiation is performed on an unirradiated partial area adjacent to an already irradiated partial area while adjusting the position of the processed light spot according to the degree of optical processing of the measured boundary area, the processed light spot on the boundary area By re-irradiating with the end of the light, it is possible to appropriately correct the degree of total light processing on the boundary region. Therefore, even if there is a change in the position of the boundary region due to the displacement of the substrate or thermal deformation and a change in the thickness or composition of the film to be processed, the total optical processing equivalent to the central portion of the partial region can be performed in the boundary region. .

In a second aspect, the present invention provides the optical processing substrate manufacturing method according to the first aspect, wherein an edge of the processing light spot that hits the boundary region when the processing light spot is irradiated onto the unirradiated region is defined as the excitation light. A method for manufacturing an optical processing substrate is provided.
In the manufacturing method of the optical processing board | substrate by the said 2nd viewpoint, since the edge part of a processing light spot is utilized as excitation light, another excitation light source is unnecessary. Further, since the measurement of fluorescence and the irradiation of the processing light spot are performed simultaneously, the processing time can be shortened.

In a third aspect, the present invention is characterized in that in the method for manufacturing an optical processing substrate according to the first aspect, the boundary region is irradiated with the excitation light before the non-irradiated region is irradiated with the processing light spot. A method for manufacturing an optical processing substrate is provided.
In the optical processing substrate manufacturing method according to the third aspect, since the fluorescence measurement and the processing light spot irradiation are performed separately, an excitation light source different from the processing light source can be used. Further, since the processing light spot is irradiated after the fluorescence is measured, the position adjustment accuracy of the processing light spot can be improved.

In a fourth aspect, the present invention relates to a stage for holding a substrate and a process for irradiating the partial area with a processing light spot smaller than a partial area obtained by dividing the area of the substrate held on the stage into a plurality of areas to be optically processed. Light processing degree that measures the light processing degree of the boundary region by irradiating excitation light to the boundary region between the light irradiating means and the unirradiated partial region adjacent to the unirradiated partial region and detecting fluorescence Based on the measurement result and the measurement result, when there is no already irradiated partial area, the processing light spot is irradiated to one of the partial irradiation areas and then the edge of the processing light spot also hits the boundary area And a control means for controlling the irradiation of the processed light spot onto the unirradiated partial area while adjusting the position of the processed light spot. To.
In the optical processing substrate manufacturing apparatus according to the fourth aspect, the boundary region between the irradiated partial region and the non-irradiated partial region is irradiated with excitation light, and the generated fluorescence is detected, and the optical processing of the boundary region is performed. Measure. The extent of the optical processing of the boundary region reflects the positional variation of the boundary region due to the positional deviation of the substrate and thermal deformation, and the thickness change and composition change of the processing target film. For this reason, if light irradiation is performed on an unirradiated partial area adjacent to an already irradiated partial area while adjusting the position of the processed light spot according to the degree of optical processing of the measured boundary area, the processed light spot on the boundary area By re-irradiating with the end of the light, it is possible to appropriately correct the degree of total light processing on the boundary region. Therefore, even if there is a change in the position of the boundary region due to the displacement of the substrate or thermal deformation and a change in the thickness or composition of the film to be processed, the total optical processing equivalent to the central portion of the partial region can be performed in the boundary region. .

In a fifth aspect, the present invention relates to the optical processing substrate manufacturing apparatus according to the fourth aspect, wherein the optical processing degree measurement means hits the boundary region when irradiating a processing light spot to an unirradiated region. An optical processing substrate manufacturing apparatus is provided, wherein an end portion of a spot is used as the excitation light.
In the optical processing substrate manufacturing apparatus according to the fifth aspect, since the end of the processing light spot is used as the excitation light, a separate excitation light source is not required. Further, since the measurement of fluorescence and the irradiation of the processing light spot are performed simultaneously, the processing time can be shortened.

In a sixth aspect, the present invention provides the optical processing substrate manufacturing apparatus according to the fourth aspect, wherein the optical processing degree measuring means is configured to excite the boundary region before irradiating a non-irradiated region with a processing light spot. An apparatus for manufacturing an optical processing substrate, characterized by irradiating light.
In the method for manufacturing an optical processing substrate according to the sixth aspect, since the fluorescence measurement and the processing light spot irradiation are performed separately, an excitation light source different from the processing light source can be used. Further, since the processing light spot is irradiated after the fluorescence is measured, the position adjustment accuracy of the processing light spot can be improved.

  According to the optical processing substrate manufacturing method and apparatus of the present invention, even if there is a positional variation of the boundary region due to a displacement of the substrate or thermal deformation, a thickness change or a composition change of the film to be processed, It is possible to irradiate the processing light in the same manner as the part.

  Hereinafter, the present invention will be described in more detail with reference to embodiments shown in the drawings. Note that the present invention is not limited thereby.

FIG. 1 is a configuration explanatory diagram of an optical processing substrate manufacturing apparatus 100 according to the first embodiment.
This optical processing substrate manufacturing apparatus 100 is capable of moving in the x and y directions and rotating in the θ direction while holding the substrate P inside the irradiation chamber 1 which is a sealed space blocked from outside air and the inside of the irradiation chamber 1. Stage 2, a heater 3 for preheating the substrate P, a laser oscillator 4 that emits the light beam B, an attenuator 8 a that attenuates the light energy of the light beam B to an appropriate level, and the light of the light beam B A movable mirror 6 for adjusting the axial angle, an optical system 8b for shaping the form of the light beam B into a form of a processing light spot E suitable for irradiation, and the light beam B from the transparent window 1a of the irradiation chamber 1 A final mirror 8c that leads into the irradiation chamber 1, a sensor 5 that optically reads the mark M provided on the substrate P through the transparent window 1a and detects fluorescence generated on the substrate P through the transparent window 1a, a stage 2 and Movable mirror And a control unit 7 for scanning the substrate P while adjusting the irradiation position due to processing spots E based on the information read from the substrate P by controlling sensor 5 to 6.

  The stage 2 includes a vacuum chuck mechanism and holds the substrate P.

  The heater 3 is a lamp, for example, and preheats the substrate P to 500 ° C., for example.

  The laser oscillator 4 is, for example, a XeCl excimer laser oscillator that emits light having a wavelength of 308 nm. In addition to this, a laser oscillator that emits light with a wavelength of 1064 nm, which is a fundamental wave of a YAG laser that is a solid-state laser, a laser oscillator that emits light with a second harmonic wave wavelength of 532 nm, and a light with a third harmonic wave wavelength of 355 nm A laser oscillator that emits light may be used, or a light generator that generates light other than laser light may be used.

  The sensor 5 is a CCD camera, for example. A fluorescence distribution measuring device may be used in combination.

  The movable mirror 6 can be rotated in the xy plane by an actuator such as a motor to change the angle φ.

  The control device 7 is a microcomputer, for example.

  The optical system 8b includes a homogenizer group that homogenizes the spatial distribution of light energy and a lens group that shapes the light beam B into a line-shaped processed light spot E of, for example, 0.4 mm × 180 mm.

  The substrate P is obtained by, for example, laminating an electrode layer, an insulating layer, and a thin film phosphor on a glass substrate of 560 mm × 760 mm.

FIG. 2 is a plan view showing the substrate P at room temperature (25 ° C.).
A line mark M is provided by, for example, etching along the long side of the region on the substrate P that is not thermally deformed at room temperature (25 ° C.).
In addition, the region to be optically processed is divided into three partial regions, a first partial region A1, a second partial region A2, and a third partial region A3. The first partial region A1 and the second partial region A2 partially overlap at the boundary region. Further, the second partial region A2 and the third partial region A3 partially overlap at the boundary region.

As shown in FIG. 3, the substrate P is scanned in the y direction with the processing light spot E by moving the stage 2 in the y direction.
When the substrate P at room temperature as shown in FIG. 2 is preheated to, for example, 500 ° C., it thermally deforms as conceptually shown in FIG. Since this thermal deformation and positional deviation of the substrate P are detected as deformation or positional deviation of the mark M, the movable mirror 6 swings the optical axis of the light beam B to adjust the position of the processing light spot E in the x direction. The shape of the mark M is made to follow.

  FIG. 4 is a conceptual diagram showing a state immediately after the first partial region A1 is irradiated with light.

  As shown in FIG. 5, the processing light intensity Ep of the processing light spot E gradually decreases at the end portions. For this reason, the processing degree C1 of the first partial region A1 due to light irradiation also gradually decreases at the end portion.

  Next, as shown in FIG. 6, the second partial region A <b> 2 is scanned with the processing light spot E by moving the stage 2.

As shown in FIG. 7, the end of the processing light spot E that irradiates the second partial region A2 overlaps the end of the first partial region A1, which is a boundary region with the second partial region A2. For this reason, the fluorescence of the fluorescence intensity Lp corresponding to the processing degree C1 of the first partial region A1 and the processing light intensity Ep of the processing light spot E is generated. This fluorescence is detected by the sensor 5, and the processing light spot E is adjusted in the x direction by moving the optical axis of the light beam B by the movable mirror 6 according to the pattern of the fluorescence intensity Lp. The degree to which the end of the irradiated processing light spot E overlaps the end of the first partial region A1 is controlled.
FIG. 7 conceptually shows a case where the overlap is appropriate, and the processing degree C1 of the first partial area A1 and the processing degree C2 of the second partial area A2 are uniformly connected.

  FIG. 8 conceptually shows a case where the overlap is insufficient, and it is possible to detect that the overlap is not appropriate from the pattern of the fluorescence intensity Lp which is smaller than when the overlap is appropriate. In this case, the processing degree C1 of the first partial area A1 and the processing degree C2 of the second partial area A2 are not uniformly connected.

FIG. 9 conceptually shows the case where the overlap is excessive, and it is possible to detect that the overlap is not appropriate from the pattern of the fluorescence intensity Lp which is larger than the case where the overlap is appropriate. In this case, the processing degree C1 of the first partial area A1 and the processing degree C2 of the second partial area A2 are not uniformly connected.
In the example of FIG. 9, the pattern of the fluorescence intensity Lp is larger than the case where the overlap is appropriate and the degree of processing in the boundary region is excessive, but conversely, the pattern of the fluorescence intensity Lp May become smaller, and the degree of processing in the boundary region may decrease.

  FIG. 10 is a conceptual diagram showing a state immediately after the second partial area A2 is irradiated with light.

  FIG. 11 is a conceptual diagram showing a state immediately after the third partial region A3 is irradiated with light.

FIG. 12 is a plan view showing the substrate P returned to room temperature (25 ° C.).
Light irradiation is correctly performed on the region to be light-treated.

According to the optical processing substrate manufacturing apparatus 100 of Example 1, the following effects are obtained.
(1) The irradiation position can be adjusted in accordance with the position variation of the boundary region due to the thermal deformation or displacement of the preheated substrate P and the thickness change or composition change of the processing target film. For this reason, it is possible to correctly irradiate light to a region where light processing is desired. Further, the amount of overlap between the partial areas does not become excessive or insufficient, and the light processing can be performed uniformly.
(2) Since the processing light spot E is moved in the x direction for adjusting the irradiation position, the adjustment accuracy can be easily increased as compared with the stage 2 in which the substrate P is moved in the x direction.
(3) The thin film phosphor formed on the glass substrate can be crystallized.

FIG. 13 is an explanatory diagram of a configuration of the optical processing substrate manufacturing apparatus 200 according to the second embodiment.
The optical processing substrate manufacturing apparatus 200 is basically the same as the optical processing substrate manufacturing apparatus 100 according to the first embodiment except that the optical processing substrate manufacturing apparatus 200 includes the excitation light lamp 10.

  The excitation light lamp 10 is, for example, a mercury lamp.

  As shown in FIGS. 14 and 15, the positional shift of the first partial region A1 with respect to the irradiation position of the excitation light spot H can be detected by a change in the pattern of the fluorescence intensity Lp.

According to the optical processing substrate manufacturing apparatus 200 of the second embodiment, the following effects can be obtained in addition to the effects of the first embodiment.
(4) Since the excitation light lamp 10 independent of the laser oscillator 4 can be used, before the processing light spot E is irradiated, the boundary region treatment degree and the positional variation of the boundary region due to the displacement, the thickness change of the processing target film, A change in composition can be detected in advance. Also, excitation light having different wavelengths can be used.

2 shows an example of a substrate that can be manufactured according to the present invention.
FIG. 16 shows a substrate P1 in which an electrode layer T, an insulating layer I, and a thin film phosphor L1 are stacked on a glass substrate G1, and the thin film phosphor L1 is crystallized by light treatment.

  FIG. 17 shows a substrate P2 in which an insulating layer I and a silicon thin film L2 are stacked on an alkali-free glass substrate G2, and the silicon thin film L2 is crystallized by optical processing.

  FIG. 18 shows a substrate P3 in which the B ion implantation region L3 of the single crystal silicon substrate G3 is activated by light treatment.

  The present invention can be used for, for example, uniformly processing a substrate.

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a configuration explanatory view illustrating an optical processing substrate manufacturing apparatus according to a first embodiment. It is a top view which shows the board | substrate and partial area | region in room temperature. It is explanatory drawing of the condition which scans a 1st partial area | region with a process light spot. It is a conceptual diagram which shows the state of the board | substrate immediately after optically processing the 1st partial area | region. It is a conceptual diagram which shows the process degree of a 1st partial area | region. It is explanatory drawing of the condition which scans a 2nd partial area | region with a process light spot. It is a conceptual diagram which shows the case where the overlap with the 1st partial area | region of the process light spot irradiated to a 2nd partial boundary is appropriate. It is a conceptual diagram which shows the case where the overlap with the 1st partial area | region of the process light spot irradiated to a 2nd partial boundary is inadequate. It is a conceptual diagram which shows the case where the overlap with the 1st partial area | region of the process light spot irradiated to a 2nd partial boundary is excessive. It is a conceptual diagram which shows the state of the board | substrate immediately after carrying out light processing of the 2nd partial area | region. It is a conceptual diagram which shows the state of the board | substrate immediately after carrying out the optical process of the 3rd partial area | region. It is a conceptual diagram which shows the state of the board | substrate which returned to room temperature. FIG. 6 is a configuration explanatory view showing an optical processing substrate manufacturing apparatus according to a second embodiment. It is a conceptual diagram which shows the 1st example of the fluorescence intensity according to the excitation light intensity | strength and the process degree of the 1st partial region. It is a conceptual diagram which shows the 2nd example of the fluorescence intensity according to the excitation light intensity | strength and the process degree of a 1st partial area | region. It is sectional drawing which shows the 1st example of the board | substrate which can be manufactured by this invention. It is sectional drawing which shows the 2nd example of the board | substrate which can be manufactured by this invention. It is sectional drawing which shows the 3rd example of the board | substrate which can be manufactured by this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Irradiation chamber 1a Transparent window 2 Stage 3 Heater 4 Light generator 5 Sensor 6 Movable mirror 7 Control apparatus 100 Optical processing board manufacturing apparatus A1 1st partial area A2 2nd partial area A3 3rd partial area M mark P board | substrate

Claims (6)

Scanning the one of the partial area an area to be light treated substrate in small processing spot than plurality of divided partial areas, and then the end of the processing light spot strikes in the boundary area between adjacent partial regions In the optical processing substrate manufacturing method, an adjacent partial region is scanned with the processing light spot while the position is adjusted in this manner, and this processing is repeated in order to detect fluorescence by irradiating the boundary region with excitation light. And measuring the degree of light processing of the boundary region, and performing control to scan the adjacent partial region with the processing light spot while adjusting the position of the processing light spot based on the measurement result. A method for manufacturing an optical processing substrate. 2. The method of manufacturing an optical processing substrate according to claim 1, wherein an edge of the processing light spot that hits the boundary region is used as the excitation light when an unirradiated partial region is scanned with the processing light spot. A method for manufacturing an optical processing substrate. The method for manufacturing an optical processing substrate according to claim 1, wherein the excitation light is irradiated to the boundary region before an unirradiated partial region is scanned with the processing light spot. A stage for holding a substrate, a processing light irradiating means for scanning the partial area of the area to be light treatment of the substrate held on the stage with a small processing spot than plurality of divided partial regions, the unexposed regions regions an optical processing about measuring means for measuring the degree of light treatment of the boundary area by detecting fluorescence by irradiating with excitation light in the boundary region between the non-irradiated portion region of the irradiated portion adjacent regions, based on previous SL measurement result And a control means for controlling the unirradiated partial region to be scanned with the processing light spot while adjusting the position of the processing light spot. 5. The optical processing substrate manufacturing apparatus according to claim 4, wherein the optical processing degree measurement unit uses the excitation light to detect an end portion of the processing light spot that hits the boundary region when an unirradiated partial region is scanned with the processing light spot. An optical processing substrate manufacturing apparatus characterized by being used as: 5. The optical processing substrate manufacturing apparatus according to claim 4, wherein the optical processing degree measuring unit irradiates the boundary region with the excitation light before scanning an unirradiated partial region with the processing light spot. An optical processing substrate manufacturing apparatus.

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