JP5196809B2 - Memory system - Google Patents

Description

  The present invention relates to a case where a plurality of different types of non-volatile memories are used in a device incorporating a non-volatile memory that is electrically erasable and can retain stored data contents even when the power is turned off. It relates to the memory system.

  An EEPROM, which is a non-volatile memory, is generally used together with a microcomputer (hereinafter referred to as a microcomputer) to construct a memory system in the apparatus. By using this EEPROM, the individual adjustment data of the device is written to the EEPROM as needed to improve the processing performance. Another nonvolatile memory is a flash ROM, which has recently become popular for use as an internal memory of a microcomputer.

  Conventionally, a mask ROM built-in microcomputer incorporating a mask ROM that is inexpensive and cannot be rewritten is combined with an external EEPROM. However, recently, flash ROM built-in microcomputers with built-in flash ROM have become cheaper and the price difference from mask ROM built-in microcomputers has been reduced.

  Devices that do not use an external EEPROM have also been developed by using a microcomputer with a built-in flash ROM. By writing control adjustment data in the flash ROM built in the microcomputer with built-in flash ROM instead of writing in the external EEPROM, there is no need to use an external EEPROM, and the price is reduced by the IC price. The price of can also be lowered.

  It is known that an external EEPROM that is normally used and a flash ROM built in a microcomputer are limited in the number of times of rewriting. In recent years, the number of external EEPROM is about 1 million times, and the performance guarantee of about 100 times is practical for a flash ROM. If the flash ROM is continuously used beyond this number of rewrites, the stored data may be erased, and handling is necessary.

  Considering that these nonvolatile memories have a limit on the number of times of rewriting, Patent Document 1 provides a plurality of sockets into which an EEPROM can be inserted, and when the number of times of rewriting reaches the limit, data is copied across the other. It is disclosed that it is used.

JP-A-5-232759

  As described above, there is a limit to the number of times the nonvolatile memory can be rewritten, and some devices may exceed this limit. In this case, it is necessary to store the adjustment data using an external memory having a rewrite count of 1 million times, but this has a demerit that the cost is increased.

  An example of a device that exceeds this rewrite limit is an optical device such as an interchangeable lens of a digital single lens reflex camera. Unlike general home appliances, this type of optical equipment is often used outdoors, and in order to maintain performance even in various environments, adjustments are made in response to external environmental changes such as ambient temperature and humidity. Data is stored in a non-volatile memory. In addition, if an automatic adjustment mechanism that matches the frequency of use of the optical device is included, the number of times the memory is rewritten by correcting the adjustment data stored in the nonvolatile memory according to the user's usage environment and frequency of use. Will change.

  In other words, even with the exact same optical equipment, there are cases where the number of rewrites is large / small depending on the use state of the user, but the manufacturer needs to consider commercialization assuming a case where the number of rewrites is large. . For this reason, it is necessary to mount an external EEPROM having a large number of rewrites, but the cost is increased due to this.

  Patent Document 1 describes the content itself in terms of both the number of rewrites and the cost, but it is described that the same type of EEPROM memory is used, and one EEPROM is always mounted in the device. Is assumed. Note that Patent Document 1 does not describe any specific method such as an EEPROM selection method or usage.

  In the conventional optical apparatus, the external EEPROM has a limit of 1 million times of rewriting, so the number of times of rewriting itself hardly causes a problem. However, as described above, when a microcomputer with built-in flash ROM is used in an optical device, the number of rewrites is only about 100 times, and there are cases where the number of rewrites is insufficient. For this reason, it is necessary to use an external EEPROM, which is another nonvolatile memory, even though the nonvolatile memory in the microcomputer is used. In other words, it is considered that a new usage method when these nonvolatile memories are used is necessary to reduce the product price in an apparatus such as an optical apparatus corresponding to environmental changes.

  An object of the present invention is to solve the above-described problems and provide a memory system that can be used without considering the number of times of rewriting of a nonvolatile memory.

In order to achieve the above object, the technical feature of the memory system according to the present invention is that in the memory system of an optical apparatus capable of incorporating a plurality of different types of nonvolatile memories, the types of the incorporated nonvolatile memories are as follows. If the determination means determines that a plurality of different types of non-volatile memories are mounted by the determination means , the storage means that stores in advance the priority order for using the nonvolatile memory, and the storage means a control means for controlling said optical apparatus in accordance with the stored priority nonvolatile memory information is selected in accordance with the said determining means, said priority non-volatile memory that is chosen by ranking read data is to nonvolatile memories selected according to the priority order is determined whether or not the external in response to the read data

According to the memory system of the present invention, it is possible to obtain an optimal price in accordance with the use frequency and use environment of the user in an optical apparatus compatible with a plurality of different types of nonvolatile memories. When the number of times of rewriting of the nonvolatile memory exceeds the limit, it is possible to prompt the user to add the nonvolatile memory by issuing some warning. In addition, if the user determines that there is no significant problem in performance even with the current adjustment data, it is possible to continue using the memory without adding a memory. Furthermore, since the manufacturer is not only replacing the memory but only performing additional work, the working time can be reduced and the work cost can be reduced accordingly.

  The present invention will be described in detail based on the embodiments shown in the drawings.

  Embodiment 1 shows an interchangeable lens 1 in which a plurality of nonvolatile memories can be incorporated in an autofocus single-lens reflex camera, and FIG. 1 is a block circuit configuration diagram inside the interchangeable lens 1.

  The autofocus interchangeable lens 1 incorporates a lens microcomputer 2 that controls various units, actuators, sensors, and the like. The input terminal of the lens microcomputer 2 has a rotation amount detector 3, a voltage detector 4, and switch detection. The output of means 5 is connected. A motor unit 6, a diaphragm unit 7, and a camera shake correction unit 8 are connected to the output terminals of the lens microcomputer 2. In addition, the lens microcomputer 2 is connected to the communication interface 9 so that signals can be transmitted and received with each other, and an external EEPROM 10 is connected to the lens microcomputer 2.

  The lens microcomputer 2 includes a CPU core 11 that is a microprocessor, a RAM 12 that is a volatile memory, a flash ROM 13 that is a nonvolatile memory, and a peripheral peripheral 14. The flash ROM 13 is composed of erasable blocks 13a to 13h, and has peripheral peripherals 14 general-purpose I / O ports, timers, A / D converters, etc., and the CPU core 11 and peripheral functions can transmit and receive signals to and from each other. Yes.

  The motor unit 6 includes a motor for AF, the rotation amount detector 3 detects the rotation amount of the motor when the motor unit 6 performs an AF operation, and the aperture unit 7 adjusts the amount of light incident on the interchangeable lens 1. The voltage detector 4 detects the voltage applied to the lens microcomputer 2, and performs an operation for resetting the lens microcomputer 2 when the voltage is equal to or lower than a predetermined voltage. The correction unit 8 includes a vibration gyro and an actuator for performing camera shake correction. The communication interface 9 is fixed to a ring mount (not shown) for fixing the interchangeable lens 1 to the camera. In this embodiment, the communication interface 9 and the camera or an external device are electrically connected to perform communication. The switch detection means 5 represents various switches related to the interchangeable lens 1, and detects states of an AF mode changeover switch, a camera shake correction permission switch, and the like. The external EEPROM 10 is attached to the inside of the interchangeable lens 1, but the user purchases it with the memory itself removed at first.

  Further, each peripheral unit of the rotation amount detector 3 to the camera shake correction unit 8 is electrically connected to the lens microcomputer 2, and the lens microcomputer 2 executes processing according to a program.

  In the flash ROM 13, erasable blocks 13a to 13h are arranged. The memory capacity of each erasable block is 4K bytes for the erasable blocks 13a and 13b, 32K bytes for the erasable blocks 13c to 13h, and is about 200K bytes in total. In the erasable block 13a, control data and adjustment data for stably operating the peripheral units of the rotation amount detector 3 to the camera shake correction unit 8 of the interchangeable lens 1 are mainly written. The value of this adjustment data should be changed for each individual interchangeable lens 1, and each unit in the interchangeable lens 1 is measured by an external device (not shown), and the adjustment data can be erased. A write operation is being performed.

  FIG. 2 is an explanatory diagram of the internal memory arrangement of the RAM 12. The maximum memory capacity of the lens microcomputer 2 is 32 Kbytes, and addresses from H′FF0000 to H′FF7FFF (hexadecimal) are arranged.

  When the lens microcomputer 2 is turned on, the program stored in the flash ROM 13 is executed. First, it is determined whether or not the external EEPROM 10 is attached. If it is determined that the EEPROM 10 is not attached, all the data in the erasable block 13 a of the flash ROM 13 is transferred to the RAM 12. If it is determined that the EEPROM 10 is attached, all data in the EEPROM 10 is transferred to the RAM 12.

  In any case, the transfer destination RAM address is H'FF0000 to H'FF0FFF. This first determines which memory is to be used, and as a result, the data of the determined memory is transferred to the RAM 12, so that this determination need not be made thereafter. In other words, the processing speed of the program can be increased by always using the data in the RAM 12 in the subsequent programs.

  Next, the lens microcomputer 2 repeats the operation and processing using each unit of the rotation amount detector 3 to the camera shake correction unit 8 in accordance with an instruction command received from the communication interface 9 from a camera (not shown).

  For example, when the internal motor is driven to use the motor unit 6, the control data stores the cumulative number of times of driving the motor and switches the control. If the number of times the motor is driven is greater than a predetermined value, the load applied to the motor increases due to mechanical wear, and if the load increases with the same voltage, the rotation speed naturally decreases. In order to perform control in consideration of the load applied to the motor, the number of times of driving is written in the flash ROM 13 and the EEPROM 10 at a certain timing, so that the data can be stored even when the interchangeable lens 1 is turned off.

  Next, when power is supplied to the lens microcomputer 2, the lens microcomputer 2 is controlled by the stored number of times of driving. For example, when the number of times of driving becomes greater than a predetermined value, the applied voltage to the motor is set to a high value, so that the rotation speed of the motor does not change even when the load increases. The predetermined value being compared here refers to the adjustment data described above. Since the characteristics vary depending on the motor, it is necessary to change the value to be compared.

  In addition, since the motor is also used in the aperture unit 7 and the camera shake correction unit 8, control data and adjustment data are stored in different addresses of the flash ROM 13 and the EEPROM 10. These control data and adjustment data sometimes need to be rewritten as described above, but the nonvolatile memory has a limited number of rewrites as described in the prior art.

  It is expected that the cumulative number of times the motor is driven will change depending on the frequency of use by the user. One user may need 50 rewrites and another user may need 200 rewrites. In other words, considering the memory as a main component, in this case, the design concept of the interchangeable lens 1 needs to be considered at the worst value, and it is naturally considered that the external EEPROM 10 must be attached and manufactured. Therefore, even if the function is unnecessary for the user, the interchangeable lens 1 having a high price for the IC is purchased.

  In the present embodiment, the product is manufactured without attaching the external EEPROM 10, and adjustment data and control data are written in the built-in flash ROM 13, and nothing is necessary for a user who uses the interchangeable lens 1 less frequently. . In the case of a user who is frequently used, a warning is issued from the interchangeable lens 1 or the camera before the flash ROM is rewritten 100 times. The user can determine whether to make a repair request to the manufacturer or to leave it as it is based on the content of the warning. Even if it is left as it is, if the user does not care about the autofocus speed in the above-described example, there is no particular problem even if the user does not care about it.

  As described above, for example, “What caused the warning?” And “What is the malfunction when used as it is” are issued as warnings, and it is possible to leave it to the judgment of the user. Accordingly, the user can purchase a cheaper interchangeable lens 1 and can determine whether or not to repair the interchangeable lens 1 according to his / her use frequency and considering a performance difference. Further, since the contents of the repair are only attached to the EEPROM 10, the user can be charged, the number of repair days can be reduced, and the manufacturer can easily manage the inventory.

  FIG. 3 shows the internal structure of the communication interface 9. Three electrical signals are connected to the lens microcomputer 2 and connected to the mount side of the interchangeable lens 1 via the communication interface 9. These three signals are usually connected to a camera via a mount (not shown) for communication. Further, when the flash ROM 13 or the EEPROM 10 is rewritten, it is set to communicate with the lens microcomputer 2 using an external device.

  In FIG. 3, in the lens microcomputer 2, the communication interface 9 is set as a clock synchronous serial communication interface, the buffer 9a receives the output data Cout from the camera, and its output is connected to the input terminal Lin of the lens microcomputer 2. Yes. The buffer 9b receives the output data Lout from the lens microcomputer 2, and its output is connected to the input terminal Cin of the camera. The buffer 9c is a buffer capable of bidirectional communication, and normally receives a synchronous clock output Cclk from the camera, and its output is connected to the synchronous clock input terminal Lclk of the lens microcomputer 2.

  4 shows the waveforms of Cout, Cin, and Cclk of FIG. 3 observed from the mount side of the interchangeable lens 1. The lens microcomputer 2 is configured to output data to Lout at the fall of Cclk and read the camera data Cout with Lin at the rise of Cclk. Serial data is recognized on the basis of 8 bits, and communication itself is performed by communicating with each other by the number of data corresponding to an instruction command from a camera or an external device. When the lens microcomputer 2 receives all the serial data based on 8 bits, the lens microcomputer 2 switches the Cclk to the output terminal as shown by the waveform described as Busy, and performs the operation of temporarily lowering the output. At this time, the camera or the external device switches the inversion of the input / output direction of the buffer 9c and Cclk from the output terminal to the input terminal.

  By this operation, the lens microcomputer 2 processes the received data, and when the processing is completed, cancels the lowering of Cclk and switches to the input terminal. As a result, Cclk is pulled up to the power source and is therefore set to the high level. The camera or external device waits for this Cclk to be set to the high level, then switches Cclk to the output terminal, inverts the input / output direction of the buffer 9c, and transmits the next communication.

  FIG. 5 is a table in which the serial communication waveform of FIG. 4 is converted into hexadecimal data and the communication contents are shown in time series. Cout in (1) is camera command communication, and the instruction command from the camera is 10H. The lens microcomputer 2 recognizes this 10H as an instruction to write data to the flash ROM 13, or if there is an external EEPROM 10, and the number of data to be communicated is 3 bytes. Since Cin at this time changes depending on the previous communication, it is set to XXH (nonsense).

  (2) is data of the first byte of the instruction command 10H from the camera and represents data to be written to the flash ROM 13 (or EEPROM 10). Cin returns the last upper address of the flash ROM 13 (or EEPROM 10) because the instruction command from the camera is a write instruction to the flash ROM 13 (or EEPROM 10).

  (3) is the second byte data of the instruction command 10H from the camera and represents the upper address data to be written to the flash ROM 13 (or the EEPROM 10). Cin returns the last lower address of the flash ROM 13 (or EEPROM 10) because the instruction command from the camera is a write instruction.

  (4) is the third byte data of the instruction command 10H from the camera, and represents the lower address data of the flash ROM 13 (or EEPROM 10). Cin returns an instruction command from the camera as it is.

  Cout in (5) is camera command communication, and the instruction command from the camera is 00H. This 00H represents the status quo, the lens microcomputer 2 does not perform any particular operation, and Cin returns the instruction command from the camera as it is.

  Briefly explaining the above-described communication contents, an AAH data write instruction is issued from the camera to the flash ROM 13 (or EEPROM 10) at the address H'01FFH. At this time, since the erasable block 13a of the flash ROM 13 is a data area, the lens microcomputer 2 notifies the camera that the final address is H'0FFF. If the EEPROM 10 is attached, the program converts the write address for the EEPROM 10 using a program. Thereafter, data writing processing is performed on the designated area of the flash ROM 13 or the area of the EEPROM 10.

  In addition, the fact that the lens microcomputer 2 sends back the instruction command 10H from the camera in Cin of (4) and (5) indicates that the lens microcomputer 2 has definitely received 10H. If this is other than 10H, the lens microcomputer 2 has not received an instruction command from the camera for some reason, and the camera command data is sent from the beginning by performing communication error processing on the camera or external device side. It is possible to fix it.

  When the flash ROM 13 (or the EEPROM 10) is rewritten by communication from the external device described with reference to FIGS. 4 and 5, or when it is rewritten to update internal control data or adjustment data, rewriting at that time The number of times is updated at the same time. That is, the number of times of rewriting itself is also arranged as a part of data at a specific address in the area of the flash ROM 13 or the area of the EEPROM 10, and is counted each time rewriting is performed. The program in the lens microcomputer 2 stores the limit value of the number of rewrites.

  In the lens microcomputer 2, the flash ROM 13 is 100 times, and the EEPROM 10 is 1 million times. This program is arranged in the reset process and the rewrite process, and determines whether to use any limit value depending on whether or not the EEPROM 10 is attached.

  In this program, when it is determined that there is an abnormality approaching or exceeding the limit value of the number of rewrites, some kind of warning is issued. As a warning method, a sound generator is provided in the interchangeable lens 1 to make a sound warning, or the communication interface 9 is used so that the camera can display some warning display on the display unit.

  In addition, regarding the limitation on the number of times of rewriting of the nonvolatile memory described above, in general, the number of times of erasure is limited, not the number of times of rewriting. This is because, since erasing is performed by applying a high voltage to the memory itself at the time of erasing, the deterioration of the device due to the high voltage is set as the number of times of erasing.

  That is, in the description of the rewrite count restriction described above, if erasure is performed at the same time as rewrite, it can be determined that the same is achieved even if the rewrite count is counted. However, it is necessary to count the number of times of erasing if the control is such that only erasing is performed without erasing at the time of rewriting and erasing is performed when the erasing cannot be performed.

  FIG. 6 is an operation flowchart of the reset processing control sequence of the lens microcomputer 2.

  Step S100: When the interchangeable lens 1 is first attached to a camera (not shown), power is supplied from the camera to the interchangeable lens 1, and the lens microcomputer 2 operates with an oscillation circuit (not shown) oscillating with the supplied power. Start.

  Step S101: When the operation of the lens microcomputer 2 is started, the firmware stored after the erasable block 13b of the flash ROM 13 is started. The first processing by the firmware is from the reset processing of the lens microcomputer 2, and mainly the peripheral peripheral 14 in the lens microcomputer 2 is initialized and the RAM 12 is cleared.

  Step S102: As the next processing, the lens microcomputer 2 determines whether or not the external EEPROM 10 is attached. For this purpose, data reading processing of a predetermined address of the external EEPROM 10 is performed. Actually, serial reception processing of data in the EEPROM 10 is performed using a port connected to the EEPROM 10 of the lens microcomputer 2. If the read data is a hexadecimal number other than FFH, it is determined that the EEPROM 10 is attached, and the subsequent processing uses the data in the EEPROM 10.

  When the data read from the EEPROM 10 is hexadecimal FFH, the EEPROM 10 is not attached, or the data is FFH. Therefore, a process of writing a predetermined value at a predetermined address to the EEPROM 10 is performed. When the writing process ends, the data reading process at the address where the data is written is performed again. If the read data is equal to the data written earlier, it is determined that the EEPROM 10 is attached. If the read data is FFH, it is determined that the EEPROM 10 is not attached.

  Step S103: When the lens microcomputer 2 determines that the EEPROM 10 is attached, it transfers all the data in the EEPROM 10 to the addresses of H'FF0000 to H'FF0FFF in the RAM 12. The reason for transferring all the data to the RAM 12 is that it is troublesome to determine whether or not the EEPROM 10 is attached every time when using these data. By transferring these data to the RAM 12, when these data are used, they are always transferred only from the RAM 12, so that the above-described determination is not required, and the processing time of the program can be shortened.

  Step S104: When the lens microcomputer 2 determines that the EEPROM 10 is not attached, the subsequent processing uses the data in the flash ROM 13 and transfers the data in the erasable block 13a of the flash ROM 13 to the RAM 12. The reason for using the RAM 12 is the same reason as in Step S103.

  Step S105: The lens microcomputer 2 performs a process of reading the rewrite count data transferred to the RAM 12. When the EEPROM 10 is mounted, the read-out rewrite count data is compared with the million rewrite limit of the EEPROM 10. If the EEPROM 10 is not mounted, the read-out rewrite count data is compared with the 100 rewrite limit of the flash ROM 13. In any case, it is determined whether or not the number of rewrites is close to or exceeding the limit. In the case of the EEPROM 10, the limit on the number of rewrites is a very large value of 1 million times. It can be estimated that it does not exceed. Accordingly, when the EEPROM 10 is mounted, it may be determined that the number of rewrites is within the limit without comparing the number of rewrites with the rewrite limit.

  Step S106: When it is determined in step S105 that the limit is close to or exceeds the rewrite limit, a process for sounding a warning sound to a piezoelectric element or a speaker (not shown) embedded in the interchangeable lens 1 is executed. As another warning method, there is no problem in the process of transmitting the abnormality of the interchangeable lens 1 to the camera by the camera-lens communication through the communication interface 9 and displaying it on the liquid crystal of the camera. At this time, it is also possible to leave it to the user's judgment by displaying what kind of trouble may occur depending on the content of the abnormality.

  Step S107: All reset processes are terminated, and the process proceeds to the normal process of the interchangeable lens 1.

  FIG. 7 is a flowchart of the interrupt processing control sequence of the lens microcomputer 2.

  Step S200: This process is a process for analyzing an instruction command by serial communication from a camera or an external device, and is performed during Busy in FIG. When receiving the communication from the camera, the lens microcomputer 2 preferentially performs this interrupt process over other processes.

  Step S201: The lens microcomputer 2 determines whether the value received by serial communication from the camera or an external device is a command or data. As described with reference to FIG. 5, the command is an operation command from the camera, and various information for executing the operation command is used as data. For example, in FIG. 5, 10H requests the lens microcomputer 2 to write to the ROM by a command command, and 3-byte communication after this 10H command means that data reception is involved. That is, the lens microcomputer 2 performs the writing process to the flash ROM 13 or the EEPROM 10 after receiving 10H communication + 3 bytes of data.

  In the case of command communication, the process proceeds to step S202, and in the case of a data reception request after receiving a command previously, the process proceeds to step S206.

  Step S202: Since the determination in step S201 is command communication, the lens microcomputer 2 determines whether or not it is a drive request command for the interchangeable lens 1.

  Step S203: If it is a drive command for the interchangeable lens 1 in Step S202, lens drive for the motor unit 6 is started. When the drive start process of the interchangeable lens 1 is performed, the process proceeds to step S209 and the interrupt process is terminated.

  Step S204: Since the determination in step S201 is command communication, the lens microcomputer 2 determines whether or not it is an aperture drive request command.

  Step S205: If it is a stop drive command in Step S204, the stop drive for the stop unit 7 is started. When the drive start process of the aperture unit 7 is performed, the process proceeds to step S209, and the interrupt process is terminated. Originally, there are various other drive command commands such as camera shake correction and data transmission request commands, but the description is omitted because they are not related to this embodiment.

  Step S206: First, it is determined whether the received content is a command communication or a data request. If it is a command command, it is determined whether the received command is 10H. If it is 10H, it is stored that the next communication is reception of 3 bytes of data. Further, from the next communication, it is stored that the operation state is related to the flash ROM 13 or the EEPROM 10 in order to shift to the processing A of step S300 in FIG. If the communication command is other than 10H, the process proceeds to step S207.

  Further, when the received content is a data request, it is determined whether or not the operation state is related to the operation of the flash ROM 13 or the EEPROM 10. If the operation state is related to the operation of the flash ROM 13 or the EEPROM 10, the process proceeds to step A300 in FIG. 8; otherwise, the process proceeds to step S207.

  Step S207: Since the command communication is other than the drive request command for the interchangeable lens 1, the drive command for the aperture unit 7, and the write command for the flash ROM 13 or the EEPROM 10, the lens microcomputer 2 analyzes what the request command is from the communicated command. Do.

  Step S208: If it is a data reception request instead of command communication in Step S201, or a result of analysis in Step S207, a data reception request, a data transmission request, etc. are determined, and processing necessary for the next communication is performed. Do. In addition, since it is unrelated communication in a present Example, detailed description is abbreviate | omitted.

  Step S209: The serial communication interrupt process of the lens microcomputer 2 is terminated.

  FIG. 8 is an operation flowchart when the memory of the interrupt processing control sequence of the lens microcomputer 2 is in the operating state in step S206 of FIG.

  Steps S300 and S301: The lens microcomputer 2 determines how many times the current communication is data communication and the communication. If it is the first communication after the command communication, it represents the write data of the flash ROM 13 (or EEPROM 10), and the process proceeds to step S302.

  Step S302: The memory write data transmitted from the camera or the external device is stored in the RAM 12.

  Step S303: The lens microcomputer 2 determines whether or not the second communication after the command communication. Since the second time data represents an upper address for writing data to the flash ROM 13 (or EEPROM 10), the process proceeds to step S304.

  Step S304: The memory write upper address data transmitted from the camera or the external device is stored in the RAM 12.

  Step S305: If it is the data communication of the memory write operation command and neither the first communication nor the second communication, it is determined that it is a lower address for writing data to the flash ROM 13 (or the EEPROM 10). As a result, the received data is stored in the RAM 12 as memory write lower address data transmitted unconditionally from the camera or the external device. In addition, since a series of communication processes for the memory writing operation is completed, the state where the operation state relating to the operation of the flash ROM 13 or the EEPROM 10 is stored is cancelled.

  Step S306: The lens microcomputer 2 determines the current memory state based on the result of determining whether the EEPROM 10 is attached in step S102 of the reset process of FIG.

  Step S307: If it is determined in step S306 that the EEPROM 10 is not attached, the address data and write data acquired in steps S301 to S305 are used to rewrite the data in the erasable block 13a of the flash ROM 13. At the same time, the stored number-of-rewrites data is incremented by +1 or -1, so that the operation for advancing the count is performed and then written to the flash ROM 13.

  Step S308: If it is determined in step S306 that the EEPROM 10 is attached, the EEPROM 10 is written using the address data and write data acquired in steps S301 to S305. Further, the address data acquired by communication at this time corresponds to the address data of the flash ROM 13, and therefore conversion processing to the address of the EEPROM 10 is performed. At the same time, the stored number-of-rewrites data is incremented by +1 or -1, so that the operation for advancing the count is performed and then written to the EEPROM 10.

  Step S309: When the EEPROM 10 is mounted, the lens microcomputer 2 compares the updated rewrite frequency data with 1 million rewrite limit. When the EEPROM 10 is not mounted, the read rewrite count data is compared with the rewrite limit 100 times. In any case, it is determined whether the number of rewrites is close to or exceeding the limit.

  Step S310: If it is determined in step S309 that the limit is near or exceeds the rewrite limit, a warning process is executed.

  Step S311: The process proceeds to step S209 in FIG. Steps S306 to S310 in FIG. 8 may be performed, for example, by the processing in steps S203 and S205 in FIG. This is because, as described above, when various control data or adjustment data of the interchangeable lens 1 needs to be updated, the flash ROM 13 and the EEPROM 10 are rewritten in a program using these data. . Regarding these processes, if steps S306 to S310 are considered as a subroutine, they can be easily accessed from other controls.

  In the first embodiment, two types of memories, the flash ROM 13 and the EEPROM 10, have been described. However, a non-contact IC tag is known as another memory means in recent years. For example, Patent Document 2 introduces an IC tag having solid identification information stored in an interchangeable lens.

  FIG. 9 is a block circuit configuration diagram inside the interchangeable lens 1 according to the second embodiment, which is almost the same as FIG. 1 according to the first embodiment, but the output of the IC tag reader 21 is connected to the lens microcomputer 2 with respect to FIG. ing. The IC tag reader 21 can read the data of the IC tag 22.

  In the processing of the IC tag reader 21 and the IC tag 22, the IC tag reader 21 first transmits a microwave band radio wave to the IC tag 22. The IC tag 22 in the interchangeable lens 1 has an antenna for transmitting and receiving radio waves, and operates by generating a power source by electromagnetic induction from the radio waves received by the antenna. Since the radio wave also serves as data transmission / reception, various control data and adjustment data stored in advance are output, and the output data is read by the IC tag reader 21 and transferred to the RAM 12.

  In the second embodiment, since there are a plurality of different types of memories, the lens microcomputer 2 confirms whether or not various memories are mounted in accordance with a preset priority order of used memories. In the second embodiment, the EEPROM 10 is selected as the highest priority, and then the IC tag 22 and the flash ROM 13 are selected. The reason why the EEPROM 10 is given the highest priority is that the rewrite frequency limit is large. As a usage, the flash ROM 13 is used first, and the IC tag 22 is used when the rewrite limit number is reached. This is because the communication method of the IC tag 22 is non-contact and it is only necessary that the IC tag 22 be disposed near the interchangeable lens 1, so that it is possible to deal with a new memory by simply attaching it to the exterior of the interchangeable lens 1. To use the EEPROM 10, the interchangeable lens 1 is disassembled and the EEPROM 10 is attached, which is a troublesome work.

  Next, when the IC tag 22 reaches the rewrite count limit, the attached IC tag 22 may be removed, and a new IC tag 22 may be attached, or the EEPROM 10 may be attached. This is because the EEPROM 10 has the highest number of rewrites, and therefore it may be better to attach the EEPROM 10 than the IC tag 22 when the same user exchanges it many times. When the memory for acquiring data from the flash ROM 13, the IC tag 22, and the EEPROM 10 is determined, all the data in the memory is transferred to the RAM 12.

  FIG. 10 is an operation flowchart of the reset processing control sequence of the lens microcomputer 2.

  Step S400: When the interchangeable lens 1 is first attached to a camera (not shown), power is supplied from the camera to the interchangeable lens 1, and the lens microcomputer 2 starts operating with the supplied power.

  Step S401: When the operation of the lens microcomputer 2 is started, the firmware stored after the erasable block 13b of the flash ROM 13 is started. The first processing by the firmware is from the reset processing of the lens microcomputer 2, and mainly initialization of the peripheral peripheral 14 inside the lens microcomputer 2, clearing of the RAM 12, and the like are performed.

  Step S402: As the next processing, the lens microcomputer 2 determines whether or not the external EEPROM 10 is attached. For this purpose, data reading processing of a predetermined address of the external EEPROM 10 is performed. Actually, serial reception processing of data in the EEPROM 10 is performed using a port connected to the EEPROM 10 of the lens microcomputer 2. If the read data is a hexadecimal number other than FFH, it is determined that the EEPROM 10 is attached, and the subsequent processing uses the data in the EEPROM 10.

  Further, when the data read from the EEPROM 10 is FFH in hexadecimal, it may be considered that the EEPROM 10 is not attached or the data is FFH. Therefore, a process of writing a predetermined value at a predetermined address to the EEPROM 10 is performed. When the writing process is completed, the data reading process at the address where the data is written is performed again. If the read data is equal to the previously written data, it is determined that the EEPROM 10 is attached. If the read data is FFH, it is determined that the EEPROM 10 is not attached.

  Step S403: When the lens microcomputer 2 determines that the EEPROM 10 is attached, the subsequent processing uses data in the EEPROM 10. Then, all the data in the EEPROM 10 is transferred to the addresses of H′FF0000 to H′FF0FFF in the RAM 12. The reason for transferring all the data to the RAM 12 is that it is troublesome to determine whether or not the EEPROM 10 is attached every time when using these data.

  Step S404: As the next processing, the lens microcomputer 2 determines whether or not the IC tag 22 is attached. For this purpose, the IC tag reader 21 is activated.

  Step S405: When the lens microcomputer 2 determines that the IC tag 22 is attached, in order to use the data in the IC tag 22, all the data in the IC tag 22 is transferred to the RAM 12. The reason for using the RAM 12 is the same reason as in step S403.

  Step S406: When the lens microcomputer 2 determines that the EEPROM 10 and the IC tag 22 are not attached, the subsequent processing uses the data in the flash ROM 13. Then, the data in the erasable block 13 a of the flash ROM 13 is transferred to the RAM 12. The reason for using the RAM 12 is the same reason as in step S403.

  Step S407: The lens microcomputer 2 performs a process of reading the rewrite count data transferred to the RAM 12. When the EEPROM 10 is mounted, the read rewrite count data is compared with the rewrite limit of 1 million times. If the EEPROM 10 is not attached, it is determined whether or not the IC tag 22 is attached. If it is attached, the read rewrite frequency data is compared with 10,000 times that is the rewrite limit of the IC tag 22. Do. When it is determined that the IC tag 22 is not attached, the read rewrite count data is compared with the rewrite limit of the flash ROM 13 which is 100 times. In any case, it is determined whether the number of rewrites is close to or exceeding the limit.

  Step S408: When it is determined in step S407 that the rewrite limit is close or exceeded, a process of sounding a warning sound with a piezoelectric element or a speaker is executed.

  Step S409: All reset processes are terminated, and the process proceeds to normal interchangeable lens processing.

  FIG. 11 is an operation flowchart relating to memory writing of the interrupt processing control sequence in the lens microcomputer 2.

  Steps S500 and S501: The lens microcomputer 2 determines how many times the current communication is data communication and the communication. If it is the first communication after the command communication, it represents the write data to the flash ROM 13 (or the EEPROM 10, the IC tag 22), and therefore the process proceeds to step S502.

  Step S502: The memory write data transmitted from the camera or the external device is stored in the RAM 12.

  Step S503: The lens microcomputer 2 determines whether or not the second communication after the command communication. Since the second data represents the upper address for writing data to the flash ROM 13 (or EEPROM 10, IC tag 22), the process proceeds to step S504.

  Step S504: The memory write upper address data transmitted from the camera or the external device is stored in the RAM 12.

  Step S505: If it is data communication of the memory write operation command and it is not the first or second communication, it is determined that the address is a lower address for writing data to the flash ROM 13 (or EEPROM 10, IC tag 22). As a result, the received data is stored in the RAM 12 as memory write lower address data transmitted unconditionally from the camera or the external device.

  In addition, since a series of communication processing for the memory writing operation is completed, the state where the operation state relating to the operation of the flash ROM 13 (or the EEPROM 10, the IC tag 22) is stored is cancelled.

  Step S506: The lens microcomputer 2 determines the current memory state based on the result of determining whether the EEPROM 10 is attached in step S402 of the reset process of FIG.

  Step S507: The lens microcomputer 2 determines the current memory state based on the determination result of whether or not the IC tag 22 is attached in step S404 of the reset process of FIG.

  Step S508: If it is determined in step S506 that the EEPROM 10 is attached, the EEPROM 10 is rewritten using the address data and the write data acquired in steps S501 to S505.

  In addition, since the address data acquired by communication at this time corresponds to the address data of the flash ROM 13, the address data is converted into the address of the EEPROM 10. At the same time, an operation for advancing the count is performed by incrementing the stored rewrite count data by +1 or −1, and then writing to the EEPROM 10 is performed.

  Step S509: If it is determined in step S507 that the IC tag 22 is attached, the IC tag 22 is rewritten using the address data and write data acquired in steps S501 to S505. In addition, since the address data acquired by communication at this time corresponds to the address data of the flash ROM 13, the address data is converted to the address of the IC tag 22. At the same time, the stored number-of-rewrites data is incremented by +1 or −1 and the count is incremented, and then written to the IC tag 22.

  Step S510: If it is determined in step S507 that the IC tag 22 is not attached, the data in the erasable block 13a of the flash ROM 13 is rewritten using the address data and write data acquired in steps S501 to S505. Do. At the same time, the stored number-of-rewrites data is incremented by +1 or −1, and the count is incremented, and then written in the flash ROM 13.

  Step S511: The lens microcomputer 2 performs a process of reading out the rewrite count data simultaneously written in the RAM 12 in steps S508 to S510. When the EEPROM 10 is mounted, the read-out rewrite count data is compared with the million rewrite limit of the EEPROM 10.

  When the IC tag 22 is attached, the read IC tag rewrite frequency data is compared with 10,000 times which is the rewrite limit of the IC tag. When the IC tag 22 is not mounted, the read rewrite count data is compared with the rewrite limit of the flash ROM 13 100 times. In any case, it is determined whether the number of rewrites is close to or exceeding the limit.

  Step S512: If it is determined in step S511 that the limit is near or exceeds the rewrite limit, a warning process is executed.

  Step S513: The process proceeds to step S209 in FIG.

JP 2006-30859 A

  In the present invention, not only the memory system of the optical device of the embodiment but also an industrial device using a flash ROM microcomputer can be used to construct a similar configuration and system.

1 is a block circuit configuration diagram of Embodiment 1. FIG. It is explanatory drawing of arrangement | positioning of memory. It is explanatory drawing of a communication interface. It is explanatory drawing of a communication waveform. It is explanatory drawing of the content of communication. FIG. 6 is a flowchart of reset processing operation according to the first embodiment. FIG. 3 is a flowchart of interrupt processing according to the first embodiment. FIG. 6 is a flowchart of interrupt processing operations according to the first embodiment. 6 is a block circuit configuration diagram of Embodiment 2. FIG. FIG. 10 is a flowchart of reset processing operation according to the second embodiment. FIG. 10 is a flowchart of interrupt processing operations according to the second embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Interchangeable lens 2 Lens microcomputer 3 Rotation amount detector 4 Voltage detector 6 Motor unit 7 Aperture unit 8 Camera shake correction unit 9 Communication interface 10 EEPROM
11 CPU core 12 RAM
13 Flash ROM
13a to 13b Erasable block 14 Peripheral peripheral 21 IC tag reader 22 IC tag

Claims (9)

In a memory system of an optical device capable of incorporating a plurality of different types of nonvolatile memories,
A discriminating means for discriminating the type of the nonvolatile memory incorporated therein;
Storage means for storing the priority order of using the nonvolatile memory in advance ;
When a plurality of non-volatile memory of different types by the determining means is determined to have been attached, the optical instrument according to the information of the nonvolatile memory that is selected according to priority stored in said storage means Control means for controlling ,
The determining means reads data in a nonvolatile memory selected according to the priority order, and determines whether or not the nonvolatile memory selected according to the priority order is external according to the read data. And memory system. 2. The memory system according to claim 1, wherein when the read data is a hexadecimal number other than FFH, the determining unit determines that the nonvolatile memory selected according to the priority order is external. When the read data is hexadecimal FFH, the determination means writes the predetermined data to the nonvolatile memory selected according to the priority, reads the written data, and the read data is the write If the read-out data is different from the written data, the non-volatile memory selected according to the priority order is determined to be external. The memory system according to claim 2, wherein the memory system is determined not to be attached. The control means is a predetermined value in which the number of times of writing or erasing the cumulative driving number of the motor included in the optical device in the nonvolatile memory is set in the nonvolatile memory selected according to the priority order 4. The memory system according to claim 1, wherein a warning is output when the threshold is exceeded. 5. When the non-volatile memory selected according to the priority order is external, a warning is output regardless of the number of times the cumulative driving number of the motor has been written or erased to the non-volatile memory selected according to the priority order 5. The memory system according to claim 4, wherein the memory system is not. The control means increases the voltage applied to the motor when the cumulative number of driving times of the motor included in the optical device written in the nonvolatile memory is larger than a predetermined value set in the motor. The memory system according to any one of claims 1 to 3.   2. The memory system according to claim 1, further comprising means for detecting an abnormality of the nonvolatile memory, and outputting a warning when an abnormality of the nonvolatile memory selected according to the priority order is detected. The memory system according to claim 7 , wherein the abnormality of the nonvolatile memory is based on the number of rewrites of the nonvolatile memory. An optical apparatus comprising the memory system according to claim 1.

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