JP5214031B2 - 半導体リソグラフィのための投影露光装置における振動減衰方法 - Google Patents
半導体リソグラフィのための投影露光装置における振動減衰方法 Download PDFInfo
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- JP5214031B2 JP5214031B2 JP2011526508A JP2011526508A JP5214031B2 JP 5214031 B2 JP5214031 B2 JP 5214031B2 JP 2011526508 A JP2011526508 A JP 2011526508A JP 2011526508 A JP2011526508 A JP 2011526508A JP 5214031 B2 JP5214031 B2 JP 5214031B2
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- assembly
- replaceable
- exposure apparatus
- replaceable assembly
- projection exposure
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
- H10P76/20—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials
- H10P76/204—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising organic materials of organic photoresist masks
- H10P76/2041—Photolithographic processes
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/709—Vibration, e.g. vibration detection, compensation, suppression or isolation
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/7085—Detection arrangement, e.g. detectors of apparatus alignment possibly mounted on wafers, exposure dose, photo-cleaning flux, stray light, thermal load
Landscapes
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Environmental & Geological Engineering (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Lens Barrels (AREA)
Description
Claims (12)
- 半導体リソグラフィのための投影露光装置(310)に用いる交換可能なアセンブリ(1)であって、
前記交換可能なアセンブリは、少なくとも1個の減衰素子(2)を備え、前記減衰素子(2)は、弾性要素(21)に連結した質量要素(20)を有することを特徴とする、交換可能なアセンブリ。 - 請求項1に記載の交換可能なアセンブリ(1)であって、前記交換可能なアセンブリ(1)は、さらに、少なくとも1個の光学素子(3)を備えることを特徴とする、交換可能なアセンブリ。
- 請求項1に記載の交換可能なアセンブリ(1)であって、前記減衰素子(2)がせん断運動を行うことができるように、前記弾性要素(21)を前記質量要素(20)に連結したことを特徴とする、交換可能なアセンブリ。
- 請求項1〜3のいずれか一項に記載の交換可能なアセンブリ(1)であって、前記質量要素(20)の質量は150g〜450gの範囲内であることを特徴とする、交換可能なアセンブリ。
- 請求項4に記載の交換可能なアセンブリ(1)であって、前記質量要素(20)の質量は、250g〜350gの範囲内であることを特徴とする、交換可能なアセンブリ。
- 請求項1〜5のいずれか一項に記載の交換可能なアセンブリ(1)であって、前記弾性要素(21)はフッ素エラストマから生成したことを特徴とする、交換可能なアセンブリ。
- 請求項1〜6のいずれか一項に記載の交換可能なアセンブリ(1)であって、前記減衰素子(2)には冷却デバイスを設けたことを特徴とする、交換可能なアセンブリ。
- 請求項7に記載の交換可能なアセンブリ(1)であって、前記冷却デバイスは、ガス冷却手段、液体冷却手段、またはヒートパイプであることを特徴とする、交換可能なアセンブリ。
- 請求項1〜8のいずれか一項に記載の交換可能なアセンブリ(1)であって、前記交換可能なアセンブリ(2)は挿入素子として実施することを特徴とする、交換可能なアセンブリ。
- 請求項1〜9のいずれか一項に記載の交換可能なアセンブリ(1)であって、前記減衰素子(2)は、周波数が10Hz〜800Hzの範囲にある振動を減衰するように設計したことを特徴とする、交換可能なアセンブリ。
- 半導体リソグラフィのための投影露光装置(310)であって、請求項1〜10のいずれか一項に記載の交換可能なアセンブリ(2)を少なくとも1個含んで構成されることを特徴とする、投影露光装置(310)。
- 請求項11に記載の半導体リソグラフィのための投影露光装置(310)であって、前記交換可能なアセンブリ(2)は挿入開口部に配置されることを特徴とする、投影露光装置。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102008047562.9 | 2008-09-16 | ||
| DE102008047562A DE102008047562B4 (de) | 2008-09-16 | 2008-09-16 | Vorrichtung zur Dämpfung von Schwingungen in Projektionsbelichtungsanlagen für die Halbleiterlithographie |
| PCT/EP2009/061917 WO2010031754A1 (en) | 2008-09-16 | 2009-09-15 | Vibration damping in projection exposure apparatuses for semiconductor lithography |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2012503305A JP2012503305A (ja) | 2012-02-02 |
| JP2012503305A5 JP2012503305A5 (ja) | 2012-11-01 |
| JP5214031B2 true JP5214031B2 (ja) | 2013-06-19 |
Family
ID=41228717
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2011526508A Active JP5214031B2 (ja) | 2008-09-16 | 2009-09-15 | 半導体リソグラフィのための投影露光装置における振動減衰方法 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8212992B2 (ja) |
| EP (1) | EP2326989B1 (ja) |
| JP (1) | JP5214031B2 (ja) |
| KR (1) | KR101608555B1 (ja) |
| CN (1) | CN102159996B (ja) |
| DE (1) | DE102008047562B4 (ja) |
| TW (1) | TWI610139B (ja) |
| WO (1) | WO2010031754A1 (ja) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2469340B1 (en) | 2010-12-21 | 2021-01-06 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE102015224743A1 (de) * | 2015-12-09 | 2016-10-20 | Carl Zeiss Smt Gmbh | Projektionsbelichtungsanlage für die Halbleiterlithographie mit einem pseudoelastischen Dämpfungselement |
| DE102020206591A1 (de) * | 2020-05-27 | 2021-12-02 | Carl Zeiss Smt Gmbh | Schwingungstilger und Verfahren zur Auslegung eines Schwingungstilgers sowie Projektionsbelichtungsanlage für die Halbleiterlithographie |
| US12000455B2 (en) * | 2022-03-10 | 2024-06-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Systems and methods for reducing vibration of apparatuses |
| DE102022214186A1 (de) * | 2022-12-21 | 2024-06-27 | Carl Zeiss Smt Gmbh | Optisches system und projektionsbelichtungsanlage |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030040818A1 (en) | 1994-01-27 | 2003-02-27 | Baruch Pletner | Method and device for vibration control |
| US6420819B1 (en) * | 1994-01-27 | 2002-07-16 | Active Control Experts, Inc. | Packaged strain actuator |
| JPH1089403A (ja) * | 1996-09-10 | 1998-04-07 | Nikon Corp | 防振装置 |
| DE19917104A1 (de) * | 1999-04-15 | 2000-10-26 | System 3R International Ab Vae | Halter zum exakten Positionieren eines Werkstückes |
| DE10062786A1 (de) * | 2000-12-15 | 2002-06-20 | Zeiss Carl | System zur Dämpfung von Schwingungen |
| TWI298427B (en) * | 2001-02-13 | 2008-07-01 | Asml Netherlands Bv | Damped mount for use in lithographic projection apparatus |
| DE10106605A1 (de) * | 2001-02-13 | 2002-08-22 | Zeiss Carl | System zur Beseitigung oder wenigstens Dämpfung von Schwingungen |
| DE10121346A1 (de) * | 2001-05-02 | 2002-11-07 | Zeiss Carl | Objektiv, insbesondere Projektionsobjektiv für die Halbleiter-Lithographie |
| DE10225266A1 (de) | 2001-12-19 | 2003-07-03 | Zeiss Carl Smt Ag | Abbildungseinrichtung in einer Projektionsbelichtungsanlage |
| EP1321822A1 (en) * | 2001-12-21 | 2003-06-25 | ASML Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| DE10229623A1 (de) * | 2002-06-28 | 2004-01-15 | Carl Zeiss Jena Gmbh | Baugruppe mit einer äußeren Fassung und einem optischen Element |
| US20040100007A1 (en) | 2002-11-21 | 2004-05-27 | Nikon Corporation | Vibration damping devices and methods |
| EP1457825A1 (en) * | 2003-03-11 | 2004-09-15 | ASML Netherlands B.V. | Lithographic apparatus, device manufacturing method and device manufactured thereby |
| JP4574206B2 (ja) * | 2003-04-25 | 2010-11-04 | キヤノン株式会社 | 駆動装置、それを用いた露光装置、デバイスの製造方法 |
| TW200507066A (en) * | 2003-07-25 | 2005-02-16 | Nikon Corp | Exposure apparatus |
| EP1846791A1 (en) * | 2005-02-11 | 2007-10-24 | Carl Zeiss SMT AG | Vibration damping for photolithographic lens mount |
| US7607543B2 (en) * | 2005-02-27 | 2009-10-27 | Entegris, Inc. | Reticle pod with isolation system |
| US20070097340A1 (en) * | 2005-10-31 | 2007-05-03 | Nikon Corporation | Active damper with counter mass to compensate for structural vibrations of a lithographic system |
| US7724351B2 (en) * | 2006-01-30 | 2010-05-25 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method and exchangeable optical element |
| JP5036259B2 (ja) * | 2006-09-14 | 2012-09-26 | キヤノン株式会社 | 除振装置、露光装置及びデバイス製造方法 |
| DE102006046200A1 (de) * | 2006-09-29 | 2008-04-03 | Carl Zeiss Smt Ag | Verfahren und Vorrichtung zur Positionierung eines Elements in einem optischen System |
| DE102006050835A1 (de) | 2006-10-27 | 2008-05-08 | Carl Zeiss Smt Ag | Verfahren und Vorrichtung zum Austausch von Objetkivteilen |
| US8044373B2 (en) * | 2007-06-14 | 2011-10-25 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
| JP5641878B2 (ja) | 2010-10-29 | 2014-12-17 | キヤノン株式会社 | 振動制御装置、リソグラフィー装置、および、物品の製造方法 |
-
2008
- 2008-09-16 DE DE102008047562A patent/DE102008047562B4/de active Active
-
2009
- 2009-09-15 EP EP09783010.3A patent/EP2326989B1/en not_active Not-in-force
- 2009-09-15 WO PCT/EP2009/061917 patent/WO2010031754A1/en not_active Ceased
- 2009-09-15 CN CN200980136165.9A patent/CN102159996B/zh active Active
- 2009-09-15 JP JP2011526508A patent/JP5214031B2/ja active Active
- 2009-09-15 KR KR1020117008600A patent/KR101608555B1/ko active Active
- 2009-09-16 TW TW098131174A patent/TWI610139B/zh active
-
2011
- 2011-03-11 US US13/045,697 patent/US8212992B2/en active Active
Also Published As
| Publication number | Publication date |
|---|---|
| US20110205507A1 (en) | 2011-08-25 |
| CN102159996A (zh) | 2011-08-17 |
| JP2012503305A (ja) | 2012-02-02 |
| DE102008047562A1 (de) | 2010-03-25 |
| TW201020692A (en) | 2010-06-01 |
| WO2010031754A1 (en) | 2010-03-25 |
| EP2326989B1 (en) | 2017-01-25 |
| KR101608555B1 (ko) | 2016-04-01 |
| CN102159996B (zh) | 2014-12-10 |
| TWI610139B (zh) | 2018-01-01 |
| DE102008047562B4 (de) | 2012-11-08 |
| EP2326989A1 (en) | 2011-06-01 |
| US8212992B2 (en) | 2012-07-03 |
| KR20110076929A (ko) | 2011-07-06 |
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