JP5214528B2 - Plasma processing apparatus and plasma processing method - Google Patents

Description

  The present invention relates to a plasma processing apparatus and a plasma processing method.

  Conventionally, in the manufacture of semiconductor devices such as solar cells, plasma processing apparatuses are widely used for performing plasma processing such as film formation.

  For example, when plasma processing such as film formation is performed on a substrate (a plasma processing object), the substrate is disposed between the upper electrode and the lower electrode of the plasma processing apparatus, and a high-frequency voltage is applied to the upper electrode. As a result, the plasma processing gas enters a plasma state, and a film made of a reaction product is formed on the surface of the substrate. At this time, the reaction product adheres not only to the surface of the substrate but also to the inner surface (inner wall) of the plasma chamber and the surfaces of the upper electrode and the lower electrode. The reaction product is deposited every time the plasma treatment is performed, and may be peeled off from the inner surface (inner wall) of the plasma chamber, the surfaces of the upper electrode and the lower electrode, or the like due to internal stress or the like. In this case, a part of the peeled reaction product adheres to the surface of the substrate and adversely affects the plasma treatment. For this reason, it is necessary to periodically remove reaction products adhering to the inner surface (inner wall) of the plasma chamber and the surfaces of the upper electrode and the lower electrode.

  Moreover, in order to improve the processing capability of plasma processing and reduce the manufacturing cost of products, a plasma processing apparatus mainly uses a batch processing method in which a plurality of substrates are subjected to plasma processing at the same time. When plasma processing is performed on a plurality of substrates at the same time, it is desirable that the upper electrode and the lower electrode are integrally formed in order to improve the uniformity of the plasma processing. However, if the upper electrode and the lower electrode are formed integrally, the upper electrode and the lower electrode are increased in size. In particular, when the upper electrode is increased in size, it is difficult to remove the upper electrode from the plasma processing apparatus, so that there is a disadvantage that the maintainability when removing the reaction product is lowered.

  In order to eliminate this inconvenience, a split-type electrode is used that combines a plurality of electrode parts to function as one upper electrode.

  FIG. 6 is a schematic view showing the structure of a conventional plasma processing apparatus. As shown in FIG. 6, a plasma processing apparatus 101 according to a conventional example includes a plasma chamber 102, and an upper electrode 110 and a lower electrode 120 disposed in the plasma chamber 102.

  A gas supply unit 103 is connected to the upper electrode 110 via a gas supply pipe 104, and a plasma processing gas is supplied from the gas supply unit 103 to an internal space S <b> 101 described later of the upper electrode 110. In addition, a high frequency power source 105 is electrically connected to the upper electrode 110.

  The upper electrode 110 includes an upper electrode plate 111 to which the gas supply pipe 104 and the high frequency power source 105 are connected, an intermediate plate 112, and a plurality of shower electrodes 113.

  In the intermediate plate 112, a plurality of openings 112a are formed at positions corresponding to the plurality of shower electrodes 113, respectively.

  The plurality of shower electrodes 113 are electrically connected to the upper electrode plate 111 via the intermediate plate 112, and a high frequency voltage is also applied to the plurality of shower electrodes 113. In addition, the shower electrode 113 is formed with a plurality of gas ejection holes 113 a penetrating in the thickness direction of the shower electrode 113.

  The upper electrode plate 111, the intermediate plate 112, and the shower electrode 113 form a plurality of internal spaces S101 in the upper electrode 110.

  The lower electrode 120 is grounded. The lower electrode 120 includes a heater 121, and the lower electrode 120 is maintained at a predetermined temperature.

  In the plasma processing apparatus 101, a tray 131 on which a plurality of substrates 130 are placed is disposed on the lower electrode 120, and a high frequency voltage is applied to the upper electrode 110 to perform plasma processing on the substrate 130.

  Incidentally, in the plasma processing apparatus 101 as described above, it is necessary to provide a gap S102 between the shower electrode 113 and the adjacent shower electrode 113. This is due to the following reason. That is, when the heater 121 built in the lower electrode 120 is energized, the temperature in the plasma chamber 102 is raised, but the temperature of the upper electrode plate 111, the intermediate plate 112, and the shower electrode 113 is raised during or immediately after the temperature rise. Distribution is not constant. For this reason, when the gap S102 is not provided between the adjacent shower electrodes 113, the shower electrode 113 may expand to press the adjacent shower electrode 113. In this case, stress may be generated in the shower electrode 113, the intermediate plate 112, and the upper electrode plate 111, and the shower electrode 113, the intermediate plate 112, and the upper electrode plate 111 may be deformed. For this reason, it is necessary to provide a gap S102 between the shower electrode 113 and the adjacent shower electrode 113.

  As described above, a structure in which a plurality of shower electrodes are provided on the upper electrode is disclosed in, for example, Patent Document 1.

JP 2008-106304 A

  However, when a gap S102 is provided between adjacent shower electrodes 113 as in the conventional plasma processing apparatus 101 shown in FIG. 6, the shower electrode 113 to which a high frequency voltage is applied and the grounded lower electrode 120 are provided. The plasma discharge generated between the gap S102 and the gap S102 is nonuniform between the peripheral portion of the gap S102 and the portion other than the periphery of the gap S102. For this reason, there is a problem that the plasma processing to the substrate (plasma processing object) 130 becomes non-uniform.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to improve the maintainability and improve the uniformity and processing capability of plasma processing. An apparatus and a plasma processing method are provided.

  In order to achieve the above object, a plasma processing apparatus according to a first aspect of the present invention comprises one electrode and the other electrode arranged to face each other at a predetermined distance from the one electrode, and the one electrode includes a plurality of electrodes. Including a plurality of shower electrodes having gas ejection holes and a first electrode portion disposed on the surface on the other electrode side of the shower electrode, and a gap is formed between the plurality of shower electrodes, The 1 electrode part is arrange | positioned so that the other electrode side of the clearance gap formed between several shower electrodes may be covered.

  In the plasma processing apparatus according to the first aspect, as described above, by providing a plurality of shower electrodes on one electrode, it is possible to suppress an increase in the size of each shower electrode. It can suppress that it becomes difficult to remove from. Thereby, the maintainability at the time of removing a reaction product can be improved.

  In the plasma processing apparatus according to the first aspect, as described above, by providing a plurality of shower electrodes on one electrode, it is possible to increase the size of one electrode while suppressing the increase in size of each shower electrode. it can. As a result, a plurality of plasma processing objects (substrates and the like) can be subjected to plasma processing at the same time, so that the processing capability of plasma processing can be improved.

  In the plasma processing apparatus according to the first aspect, as described above, the first electrode portion is provided on one electrode, and the first electrode portion is disposed on the other electrode side of the gap formed between the plurality of shower electrodes. To cover. Thereby, it is possible to suppress the plasma discharge generated between the one electrode and the other electrode from becoming nonuniform between the peripheral portion of the gap and the portion other than the periphery of the gap. As a result, plasma processing uniformity can be improved.

  Further, in the plasma processing apparatus according to the first aspect, as described above, by forming gaps between the plurality of shower electrodes, it is caused by expansion of the shower electrode during or immediately after the temperature increase of one electrode. And it can suppress that a shower electrode presses the shower electrode which adjoins. Thereby, since it can suppress that a stress generate | occur | produces in a shower electrode etc., it can suppress that a shower electrode etc. deform | transform.

  In the plasma processing apparatus according to the first aspect, preferably, the first electrode portion has a thickness smaller than that of the shower electrode. With this configuration, the step between the surface on the other electrode side of the first electrode portion and the surface on the other electrode side of the shower electrode can be reduced, so that plasma discharge generated between one electrode and the other electrode can be achieved. However, it can suppress that it becomes nonuniform in the peripheral part of a 1st electrode part, and parts other than the periphery of a 1st electrode part. As a result, the uniformity of plasma processing can be further improved.

  In the plasma processing apparatus according to the first aspect, preferably, the one electrode further includes a second electrode portion disposed on the opposite side of the other electrode of the shower electrode, and the first electrode portion uses a screw, The first screw hole that is screwed to the second electrode portion or the shower electrode and into which the screw of the first electrode portion is inserted has an inner diameter larger than the screw diameter of the screw. If comprised in this way, it will move a 1st electrode part with respect to a screw, a 2nd electrode part, and a shower electrode only by the difference of the internal diameter of the 1st screw hole of a 1st electrode part, and the screw diameter of a screw. be able to. Thereby, it is possible to suppress the occurrence of stress in the shower electrode, the first electrode portion, or the like due to the expansion of the shower electrode, the first electrode portion, or the like, during or immediately after the temperature increase of the one electrode. As a result, it is possible to easily suppress deformation of the shower electrode, the first electrode portion, and the like.

  In the plasma processing apparatus according to the first aspect, preferably, the one electrode further includes a second electrode portion disposed on the opposite side of the other electrode of the shower electrode, and the shower electrode is a second electrode using a screw. The second screw hole that is screwed to the electrode portion and into which the screw of the shower electrode is inserted has an inner diameter larger than the screw diameter of the screw. According to this structure, the shower electrode can be moved relative to the screw and the second electrode portion by the difference between the inner diameter of the second screw hole of the shower electrode and the screw diameter of the screw. Thereby, it is possible to suppress the generation of stress in the shower electrode or the second electrode part due to the expansion of the shower electrode or the second electrode part during or immediately after the temperature increase of the one electrode. As a result, it is possible to easily suppress deformation of the shower electrode and the second electrode portion.

  In the plasma processing apparatus according to the first aspect, preferably, the one electrode further includes a second electrode portion disposed on a side opposite to the other electrode of the shower electrode, and the first electrode portion includes the shower electrode, Screwed to the two electrode part. If comprised in this way, a 1st electrode part and a shower electrode can be attached simultaneously, or can be removed simultaneously, Therefore Maintenance property can be improved more.

  In the plasma processing apparatus according to the first aspect, preferably, the one electrode is an electrode plate disposed on the opposite side of the shower electrode from the other electrode, and an intermediate portion disposed between the electrode plate and the shower electrode and having an opening. And a board. If comprised in this way, the member (electrode plate and intermediate plate) arrange | positioned on the opposite side to the other electrode of a shower electrode will enlarge compared with the case where an electrode plate and an intermediate plate are formed with one member. Can be suppressed. Thereby, maintainability can be improved more.

  A plasma processing method according to a second aspect of the present invention is a plasma processing method using the plasma processing apparatus having the above-described configuration, and a step of arranging a plurality of plasma processing objects between one electrode and the other electrode; And applying a voltage to at least one of the one electrode and the other electrode to simultaneously perform plasma processing on a plurality of plasma processing objects. With this configuration, it is possible to simultaneously perform plasma processing on a plurality of plasma processing objects using a plasma processing apparatus capable of improving maintainability and improving plasma processing uniformity and processing capability. it can. Thereby, productivity can be improved, improving the quality of a plasma processing target object.

  As described above, according to the present invention, it is possible to easily obtain a plasma processing apparatus and a plasma processing method capable of improving maintainability and improving plasma processing uniformity and processing capability.

It is the schematic which showed the structure of the plasma processing apparatus by one Embodiment of this invention. FIG. 2 is an exploded perspective view illustrating a structure of an upper electrode of the plasma processing apparatus according to the embodiment of the present invention illustrated in FIG. 1. It is sectional drawing which showed the structure of the upper electrode of the plasma processing apparatus by one Embodiment of this invention shown in FIG. It is the expanded sectional view which showed the structure of the upper electrode of the plasma processing apparatus by one Embodiment of this invention shown in FIG. It is the expanded sectional view which showed the structure of the upper electrode of the plasma processing apparatus by the modification of this invention. It is the schematic which showed the structure of the plasma processing apparatus by a conventional example.

  Embodiments of the present invention will be described below with reference to the drawings.

  First, with reference to FIGS. 1-4, the structure of the plasma processing apparatus 1 by one Embodiment of this invention is demonstrated.

  The plasma processing apparatus 1 according to an embodiment of the present invention is used for manufacturing, for example, a solar cell. Further, as shown in FIG. 1, the plasma processing apparatus 1 includes a plasma chamber 2, and an upper electrode 10 and a lower electrode 20 disposed in the plasma chamber 2. The upper electrode 10 is an example of the “one electrode” in the present invention, and the lower electrode 20 is an example of the “other electrode” in the present invention.

  A pressure gauge 3 and an exhaust device 4 are attached to the plasma chamber 2. The pressure gauge 3 is provided for measuring the internal pressure of the plasma chamber 2. A control unit 5 is connected to the pressure gauge 3 and the exhaust device 4. The control unit 5 has a function of calculating the internal pressure of the plasma chamber 2 based on the output of the pressure gauge 3 and controlling the exhaust device 4 so that the internal pressure of the plasma chamber 2 becomes a predetermined value.

  A gas supply unit 6 made of a gas cylinder or the like is connected to the upper electrode 10 via a gas supply pipe 7, and a plasma processing gas is supplied from the gas supply unit 6 to an internal space S <b> 1 described later of the upper electrode 10. Is done. A high frequency power supply 8 is connected to the upper electrode 10.

  Here, in this embodiment, as shown in FIGS. 1 and 2, the upper electrode 10 includes a metal upper electrode plate 11, a metal intermediate plate 12, a plurality of metal shower electrodes 13, A plurality of flat plates 14 made of metal. The upper electrode plate 11 is an example of the “electrode plate” in the present invention, and the intermediate plate 12 is an example of the “second electrode portion” in the present invention. The flat plate 14 is an example of the “first electrode portion” in the present invention.

  The upper electrode plate 11 and the intermediate plate 12 are disposed on the upper side of the shower electrode 13 (on the side opposite to the lower electrode 20).

  Further, as shown in FIGS. 2 and 3, the upper electrode plate 11 has a plurality of attachment holes 11 a penetrating in the thickness direction (A direction) of the upper electrode plate 11. The gas supply pipe 7 (see FIG. 3) is attached to the attachment hole 11a.

  Further, as shown in FIG. 4, the upper electrode plate 11 is formed with a plurality of screw holes 11b to which the screws 30 are fixed. Further, as shown in FIG. 1, a high frequency power supply 8 is electrically connected to the upper electrode plate 11.

  As shown in FIGS. 1 and 2, the intermediate plate 12 is disposed between the upper electrode plate 11 and the shower electrode 13. The intermediate plate 12 has a plurality of openings 12a at positions corresponding to the plurality of shower electrodes 13, respectively.

  Further, as shown in FIGS. 2 and 4, the intermediate plate 12 has a plurality of screw holes 12 b penetrating in the thickness direction (A direction) of the intermediate plate 12. As shown in FIG. 4, the plurality of screw holes 12 b are formed at positions corresponding to the plurality of screw holes 11 b of the upper electrode plate 11. The intermediate plate 12 is screwed into the screw hole 11b of the upper electrode plate 11 by inserting the screw 30 into the screw hole 12b.

  Further, the screw hole 12 b is formed to have an inner diameter larger than the screw diameter of the screw 30. Accordingly, the intermediate plate 12 can move in the B direction and the C direction with respect to the screw 30 and the upper electrode plate 11 by the difference between the inner diameter of the screw hole 12 b and the screw diameter of the screw 30.

  Further, a plurality of screw holes 12c to which screws 31 or 32 (see FIG. 2) are fixed are formed on the lower surface of the intermediate plate 12.

  The shower electrode 13 is formed with a thickness of about 5 mm, for example. In addition, the thickness of the shower electrode 13 is not limited to about 5 mm. The shower electrode 13 has a substantially rectangular outer shape. That is, the side surface portion of the shower electrode 13 is not formed in an uneven shape.

  Further, as shown in FIG. 2, a plurality of shower electrodes 13 are provided in the B direction. Note that a plurality of shower electrodes 13 may be provided not only in the B direction but also in the C direction.

  Moreover, in this embodiment, the shower electrode 13 is arrange | positioned at predetermined intervals in the B direction from the shower electrode 13 which adjoins. That is, a gap S2 (see FIG. 1) is formed between the adjacent shower electrodes 13 in the surface direction (B direction) of the shower electrodes 13.

  Further, as shown in FIGS. 2 and 4, the shower electrode 13 includes a plurality (for example, several hundreds) of gas ejection holes 13a penetrating in the thickness direction (A direction) of the shower electrode 13 and a plurality of screw holes. 13b. The plurality of screw holes 13b are formed at positions corresponding to the plurality of screw holes 12c of the intermediate plate 12, respectively. The shower electrode 13 is screwed into the screw hole 12c (see FIG. 4) of the intermediate plate 12 by inserting the screw 31 or 32 (see FIG. 2) into the screw hole 13b. The screw hole 13b is an example of the “second screw hole” in the present invention.

  Moreover, in this embodiment, as shown in FIG. 4, the screw hole 13b is formed so that it may have an internal diameter larger than the screw diameter of the screws 31 and 32 (refer FIG. 2). Thus, the shower electrode 13 can move in the B direction and the C direction with respect to the screws 31 and 32 and the intermediate plate 12 by the difference between the inner diameter of the screw hole 13b and the screw diameter of the screw 31 or 32.

  As shown in FIG. 1, a plurality of internal spaces S <b> 1 are formed in the upper electrode 10 by the upper electrode plate 11, the intermediate plate 12 and the shower electrode 13. The plasma processing gas supplied to the internal space S1 is ejected from the plurality of gas ejection holes 13a of the shower electrode 13 to the lower electrode 20 side.

  The plurality of shower electrodes 13 are electrically connected to the upper electrode plate 11 via the intermediate plate 12, and a high frequency voltage is also applied to the plurality of shower electrodes 13.

  The flat plate 14 is smaller than the shower electrode 13, for example, has a thickness of about 1.5 mm. In addition, the thickness of the flat plate 14 is not limited to about 1.5 mm.

  Further, in the present embodiment, the flat plate 14 is on the lower surface (surface on the lower electrode 20 side) of the shower electrode 13 so as to cover the lower side (lower electrode 20 side) of the gap S2 between the adjacent shower electrodes 13. It arrange | positions so that it may closely_contact | adhere.

  Specifically, as shown in FIG. 4, the flat plate 14 is formed with a plurality of screw holes 14 a penetrating in the thickness direction (A direction) of the flat plate 14. The plurality of screw holes 14 a are formed at positions corresponding to the plurality of screw holes 12 c of the intermediate plate 12 and the plurality of screw holes 13 b of the shower electrode 13. The flat plate 14 is screwed to the screw hole 12c of the intermediate plate 12 together with the shower electrode 13 by inserting the screw 31 into the screw hole 14a. The screw hole 14a is an example of the “first screw hole” in the present invention.

  In the present embodiment, the screw hole 14 a is formed to have an inner diameter larger than the screw diameter of the screw 31. Accordingly, the flat plate 14 can move in the B direction and the C direction with respect to the screw 31, the intermediate plate 12 and the shower electrode 13 by the difference between the inner diameter of the screw hole 14 a and the screw diameter of the screw 31.

  The plurality of flat plates 14 are electrically connected to the shower electrode 13, and a high frequency voltage is also applied to the plurality of flat plates 14.

  3 and 4 show a structure in which the head of the screw 30 does not protrude downward from the lower surface (surface on the lower electrode 20 side) of the intermediate plate 12, the head of the screw 30 is intermediate. It may protrude downward from the lower surface of the plate 12. Similarly, the structure in which the head of the screw 31 does not protrude downward from the lower surface of the flat plate 14 (the surface on the lower electrode 20 side) is shown. You may protrude to the side.

  As shown in FIG. 1, the lower electrode 20 is opposed to the upper electrode 10 at a predetermined distance and is grounded. In addition, a heater 21 is built in the lower electrode 20. The heater 21 is energized regardless of the presence or absence of a tray 41, which will be described later, and the temperature is adjusted so as to hold the tray 41 at about 500 ° C.

  Next, a plasma processing method using the plasma processing apparatus 1 according to one embodiment of the present invention will be described with reference to FIGS. 1 and 2.

  First, the main power supply (not shown) of the plasma processing apparatus 1 is turned on and the heater 21 of the lower electrode 20 is energized. Thereby, the lower electrode 20 and the upper electrode 10 are heated to a predetermined temperature. During the temperature increase or immediately after the temperature increase, the temperature distribution of the upper electrode plate 11, the intermediate plate 12, the shower electrode 13 and the flat plate 14 is not constant, so this state is maintained until a predetermined time elapses after the temperature increase. Hold.

  Then, a tray 41 on which a plurality of substrates 40 are placed is placed on the lower electrode 20 (between the upper electrode 10 and the lower electrode 20) by a transport unit (not shown). Thereby, the tray 41 is hold | maintained at about 500 degreeC. The substrate 40 is an example of the “plasma processing object” in the present invention.

  Thereafter, the gas for plasma processing is supplied from the gas supply unit 6 through the gas supply pipe 7 to the internal space S1 of the upper electrode 10 while adjusting the internal pressure of the plasma chamber 2 to a predetermined value by the exhaust device 4. Supply. As a result, the plasma processing gas is ejected from the plurality of gas ejection holes 13 a of the shower electrode 13 toward the lower electrode 20 and supplied into the plasma chamber 2.

  After the internal pressure of the plasma chamber 2 is stabilized at about 100 Pa, the high frequency power supply 8 is started to apply a high frequency voltage of about 13.56 MHz, for example, to the upper electrode plate 11 at about 1000 W. At this time, the high frequency voltage is also applied to the plurality of shower electrodes 13 and the plurality of flat plates 14. As a result, the plasma processing gas enters a plasma state, and a film made of a reaction product is formed on the surface of the substrate 40.

  Then, after a preset number of seconds elapses, the output of the high frequency power supply 8 is stopped. Thereafter, the supply of the plasma processing gas is stopped.

  In this way, film formation (plasma treatment) is simultaneously performed on the plurality of substrates 40.

  In the present embodiment, as described above, by providing a plurality of shower electrodes 13 on the upper electrode 10, it is possible to suppress an increase in the size of each shower electrode 13, making it difficult to remove the shower electrodes 13. Can be suppressed. Thereby, the maintainability of the plasma processing apparatus 1 at the time of removing a reaction product can be improved.

  In the present embodiment, as described above, by providing a plurality of shower electrodes 13 on the upper electrode 10, it is possible to increase the size of the upper electrode 10 while suppressing an increase in the size of each shower electrode 13. . Thereby, since the several board | substrate 40 can be simultaneously plasma-processed, the processing capacity of a plasma process can be improved.

  Further, in the present embodiment, as described above, the flat plate 14 is disposed so as to cover the lower side (lower electrode 20 side) of the gap S2 formed between the plurality of shower electrodes 13. Thereby, it is possible to prevent the plasma discharge generated between the upper electrode 10 and the lower electrode 20 from becoming nonuniform between the peripheral portion of the gap S2 and the portion other than the periphery of the gap S2. As a result, plasma processing uniformity can be improved.

  Further, in the present embodiment, as described above, by providing the gap S2 between the plurality of shower electrodes 13, due to the expansion of the shower electrode 13 during the temperature increase of the upper electrode 10 or immediately after the temperature increase. It is possible to suppress the shower electrode 13 from pressing the adjacent shower electrode 13. Thereby, since it can suppress that a stress generate | occur | produces in the shower electrode 13 etc., it can suppress that the shower electrode 13 etc. deform | transform.

  In the present embodiment, as described above, the flat plate 14 is formed to have a thickness smaller than that of the shower electrode 13, whereby the lower surface of the flat plate 14 (surface on the lower electrode 20 side) and the lower surface of the shower electrode 13 (lower electrode). The step with respect to the surface on the 20 side can be reduced. Thereby, it is possible to prevent the plasma discharge generated between the upper electrode 10 and the lower electrode 20 from becoming nonuniform between the peripheral portion of the flat plate 14 and the portion other than the peripheral portion of the flat plate 14. As a result, the uniformity of plasma processing can be further improved.

  In the present embodiment, as described above, the screw hole 14 a of the flat plate 14 is formed to have an inner diameter larger than the screw diameter of the screw 31, whereby the inner diameter of the screw hole 14 a of the flat plate 14 and the screw 31 of the screw 31 are formed. The flat plate 14 can be moved with respect to the screw 31, the intermediate plate 12, and the shower electrode 13 by the difference from the screw diameter. Thereby, it is possible to suppress the occurrence of stress on the shower electrode 13 and the flat plate 14 due to the expansion of the shower electrode 13 and the flat plate 14 during the temperature increase of the upper electrode 10 or immediately after the temperature increase. As a result, deformation of the shower electrode 13 and the flat plate 14 can be easily suppressed.

  In the present embodiment, as described above, the screw hole 13b of the shower electrode 13 is formed so as to have an inner diameter larger than the screw diameters of the screws 31 and 32, whereby the inner diameter of the screw hole 13b of the shower electrode 13 is formed. The shower electrode 13 can be moved relative to the screws 31, 32 and the intermediate plate 12 by the difference between the screw diameter of the screw 31 or 32. Thereby, it is possible to suppress the occurrence of stress on the shower electrode 13 and the intermediate plate 12 due to the expansion of the shower electrode 13 and the intermediate plate 12 during the temperature increase of the upper electrode 10 or immediately after the temperature increase. . As a result, deformation of the shower electrode 13 and the intermediate plate 12 can be easily suppressed.

  In the present embodiment, as described above, the flat plate 14 and the shower electrode 13 can be attached and detached simultaneously by screwing the flat plate 14 together with the shower electrode 13 to the intermediate plate 12. Thereby, the maintainability of the plasma processing apparatus 1 can be further improved.

  Further, in the present embodiment, as described above, the upper electrode plate 11 and the intermediate plate 12 are formed by separate members, as compared with the case where the upper electrode plate 11 and the intermediate plate 12 are formed by one member. Thus, it is possible to prevent the members (upper electrode plate 11 and intermediate plate 12) disposed on the upper side of the shower electrode 13 in the upper electrode 10 from increasing in size. Thereby, the maintainability of the plasma processing apparatus 1 can be further improved.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is shown not by the above description of the embodiments but by the scope of claims for patent, and further includes all modifications within the meaning and scope equivalent to the scope of claims for patent.

  For example, in the above-described embodiment, an example in which film formation is performed on a plasma processing object (substrate) is shown as an example of plasma processing. However, the present invention is not limited thereto, and film formation is performed on a plasma processing object (substrate). For example, plasma treatment such as surface modification or cleaning may be performed.

  Moreover, although the example which performs a plasma process to a board | substrate was shown in the said embodiment, this invention is not limited to this, You may perform a plasma process to plasma process target objects other than a board | substrate.

  Moreover, in the said embodiment, although the example which uses a plasma processing apparatus for manufacture of a solar cell was shown, this invention is not restricted to this, You may use a plasma processing apparatus for manufacture of semiconductor devices other than a solar cell. However, it may be used for manufacturing other than semiconductor devices.

  Moreover, in the said embodiment, although the example which formed the flat plate (1st electrode part) in the thickness smaller than a shower electrode was shown, this invention is not limited to this, A flat plate (1st electrode part) is used as a shower electrode. You may form in the above thickness.

  Moreover, although the example which screwed the flat plate to the intermediate | middle board was shown in the said embodiment, this invention is not limited to this, You may screw a flat plate to a shower electrode.

  In the above embodiment, the flat plate is screwed to the intermediate plate together with the shower electrode. However, the present invention is not limited thereto, and the flat plate is screwed to the upper electrode plate together with the shower electrode and the intermediate plate. May be.

  In the above embodiment, an example in which the flat plate is attached to the intermediate plate using screws is shown. However, the present invention is not limited to this, and the flat plate may be attached to the intermediate plate or the shower electrode without using screws. Good.

  Moreover, in the said embodiment, although shown about the example which comprised the upper electrode plate and the intermediate | middle board by another member, this invention is not restricted to this, The part arrange | positioned above a shower electrode among upper electrodes ( The upper electrode plate and the intermediate plate) may be formed of one member.

  Further, in the above embodiment, an example in which the side surface portion of the shower electrode is not formed in an uneven shape has been shown. However, the present invention is not limited to this, and the shower electrode 53 is not limited thereto, as in the modification of the present invention shown in FIG. The side surface portion may be formed in an uneven shape. In this case, you may arrange | position so that the side part (part formed in the uneven | corrugated shape) of the adjacent shower electrode 53 may overlap in the thickness direction. And you may arrange | position the flat plate 54 on the lower surface of the shower electrode 53 so that the lower side of clearance gap S12 between adjacent shower electrodes 53 may be covered.

1 Plasma processing equipment 10 Upper electrode (one electrode)
11 Upper electrode plate (electrode plate)
12 Intermediate plate (second electrode part)
12a Opening 13, 53 Shower electrode 13a Gas ejection hole 13b Screw hole (second screw hole)
14, 54 Flat plate (first electrode part)
14a Screw hole (first screw hole)
20 Lower electrode (other electrode)
31, 32 Screw 40 Substrate (plasma processing object)
S2, S12 gap

Claims (7)

One electrode,
The other electrode disposed opposite to the one electrode at a predetermined distance,
The one electrode is
A plurality of shower electrodes having a plurality of gas ejection holes;
A first electrode portion disposed on the surface of the shower electrode on the other electrode side,
A gap is formed between the plurality of shower electrodes,
The plasma processing apparatus, wherein the first electrode portion is disposed so as to cover the other electrode side of the gap formed between the plurality of shower electrodes.   The plasma processing apparatus according to claim 1, wherein the first electrode portion has a smaller thickness than the shower electrode. The one electrode further includes a second electrode portion disposed on the opposite side of the other electrode of the shower electrode,
The first electrode part is screwed to the second electrode part or the shower electrode using a screw,
The plasma processing apparatus according to claim 1, wherein the first screw hole into which the screw of the first electrode portion is inserted has an inner diameter larger than a screw diameter of the screw. The one electrode further includes a second electrode portion disposed on the opposite side of the other electrode of the shower electrode,
The shower electrode is screwed to the second electrode portion using a screw,
The plasma processing apparatus according to claim 1, wherein the second screw hole into which the screw of the shower electrode is inserted has an inner diameter larger than a screw diameter of the screw. The one electrode further includes a second electrode portion disposed on the opposite side of the other electrode of the shower electrode,
The plasma processing apparatus according to claim 1, wherein the first electrode part is screwed to the second electrode part together with the shower electrode.   The one electrode further includes an electrode plate disposed on the opposite side of the shower electrode from the other electrode, and an intermediate plate disposed between the electrode plate and the shower electrode and having an opening. The plasma processing apparatus according to any one of claims 1 to 5. A plasma processing method using the plasma processing apparatus according to any one of claims 1 to 6,
Arranging a plurality of plasma processing objects between the one electrode and the other electrode;
And a step of simultaneously performing plasma processing on the plurality of plasma processing objects by applying a voltage to at least one of the one electrode and the other electrode.

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