JP5229215B2 - マイクロチップの製造方法 - Google Patents
マイクロチップの製造方法 Download PDFInfo
- Publication number
- JP5229215B2 JP5229215B2 JP2009502511A JP2009502511A JP5229215B2 JP 5229215 B2 JP5229215 B2 JP 5229215B2 JP 2009502511 A JP2009502511 A JP 2009502511A JP 2009502511 A JP2009502511 A JP 2009502511A JP 5229215 B2 JP5229215 B2 JP 5229215B2
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- JP
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- Prior art keywords
- microchip
- channel groove
- film
- substrates
- functional film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- B—PERFORMING OPERATIONS; TRANSPORTING
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Description
11、21、51、61、81、91 流路用溝
12、13、22、23、41 SiO2膜
30 マイクロチップ
31 微細流路
40 粘着部材
70 台
100 基板
この発明の第1実施形態に係るマイクロチップの製造方法について図1を参照して説明する。図1は、この発明の第1実施形態に係るマイクロチップの製造方法を説明するためのマイクロチップ基板の断面図である。
(機能性膜の形成)
次いで、マイクロチップ基板10、20の流路用溝11が形成されている面に機能性膜を形成する。以下説明するマイクロチップ基板10、20に機能性膜を形成する機能性膜形成工程が、本発明における第1工程として機能する。ここでは、形成する機能性膜の1例としてSiO2を主成分とし、親水性機能を有するSiO2膜12を形成する場合について説明する。
なお、機能性膜は、無機材料又は有機材料を用いることができる。
(機能性膜形成工程におけるSiO2膜の形成)
SiO2膜12、22は、例えば、蒸着、スパッタリング、CVD、又は塗布によって形成することができ、その成膜方法は特に限定されない。塗布、スパッタリング、又はCVDによる成膜方法が、流路用溝11、21の内面、特に流路用溝11、21の垂直壁面に密着性の良好なSiO2膜を形成できるため、より好ましい方法である。
(塗布によるSiO2膜の形成)
例えば、塗布によってSiO2膜12、22を形成する場合、硬化後にSiO2の膜となる塗布溶液をマイクロチップ基板10の表面に塗布し、その後、塗布溶液を硬化させることで、マイクロチップ基板10、20の表面にSiO2膜12、22を形成することができる。
(スパッタリングによるSiO2膜の形成)
マイクロチップ基板へのSiO2膜12、22の形成は、スパッタリングにより実施することができる。例えば、シンクロン製スパッタリング装置(装置名:RAS−1100C)を使用して、アルゴンガス流量が250sccm、酸素ガス流量が120sccm、RF出力が4.5kW、成膜レートが0.4nm/secの条件で、SiO2膜12、22を200nm成膜することができる。
(CVDによるSiO2膜の形成)
また、マイクロチップ基板へのSiO2膜12、22の形成は、CVDにより、TEOS(Tetra Ethoxy Silane)、TMOS(Tetra Mthoxy Silane)など、シリコンを含む液体ソースを気化させ、プラズマ空間中で分解、酸化させることで実施することができる。例えば、サムコ社製CVD装置(装置名:PD−270ST)を使用して、TEOS流量が12sccm、酸素ガス流量が400sccm、RF出力が300W、圧力が50Pa、成膜レートが3nm/secの条件で、SiO2膜12、22を200nmすることができる。
形成される機能性膜であるSiO2膜12、22の膜厚は、流路用溝11、21の内面がすべてSiO2で覆われること、流路用溝11、21への密着性が確保できること、流路用溝11、21を塞いでしまわないことなどを考慮して決定する。塗布によってSiO2膜を形成する場合は、塗布溶液の特性、種類に応じて膜厚を調整する。例えば、膜厚は、10nm乃至3μmの範囲内の値であることが好ましく、10nm乃至2μmの範囲内の値であることがより好ましい。また、スパッタリングやCVDによってSiO2膜を形成する場合であって、緻密なSiO2膜を形成する場合、SiO2膜の内部応力が増加する傾向にあるため、膜厚は、10nm乃至1μmの範囲内の値であることが好ましく、10nm乃至200nmの範囲内の値であることがより好ましい。
(機能性膜の剥離)
次いで、前記機能性膜が形成された面における前記流路用溝以外の面に形成された機能性膜を剥離する。第1実施形態における機能性膜の剥離は、粘着部材を使用して剥離する機能性膜剥離工程にてなされ、この機能性膜剥離工程が本発明における第2工程として機能する。以下、説明する。
(機能性膜剥離工程における機能性膜の剥離)
機能性膜剥離工程にて機能製膜の剥離を実行することにより、図1(c)に示すように、マイクロチップ基板10の流路用溝11の内面に形成されたSiO2膜以外のSiO2膜を、粘着部材によって剥離、除去され、流路用溝11の内面のSiO2膜は残存される。同様に、マイクロチップ基板20の流路用溝21の内面に形成されたSiO2膜以外のSiO2膜を、粘着部材によって剥離、除去され、流路用溝21の内面のSiO2膜は残存される。
ここで、機能性膜剥離工程における粘着部材によるSiO2膜の剥離について、図2を参照して説明する。図2は、この発明の第1実施形態に係るマイクロチップの製造方法のうち、機能性膜の剥離工程を説明するためのマイクロチップ基板の断面図である。
(接合)
そして、マイクロチップ基板10については流路用溝11が形成された面を内側にし、マイクロチップ基板20については流路用溝21が形成された面を内側にし、流路用溝11と流路用溝21の位置を合わせてマイクロチップ基板10、20を重ねて、接合する。この、流路用溝が形成された面を内側にして2つの樹脂製基板を接合する接合工程が、本発明における第3工程として機能する。
流路用溝11と流路用溝21は、対向させたときに互いに合致するパターンに形成されており、流路用溝11と流路用溝21の位置合わせを行ってマイクロチップ基板10、20を接合することで、流路用溝11と流路用溝21によって微細流路31が形成される。これにより、図1(d)に示すように、内部に微細流路31が形成されたマイクロチップ30が形成される。微細流路31の内面は、SiO2膜13、23にて、全面が覆われている。
(機能性膜剥離工程における基板の接合)
マイクロチップ基板10とマイクロチップ基板20の接合は、レーザ溶着、超音波溶着、又は熱圧着によって行われる。レーザ溶着、超音波溶着、及び熱圧着は、公知の方法を採用することができる。例えば、レーザ溶着については特開2005−74796号公報に記載の方法を採用し、超音波溶着については特開2005−77239号公報に記載の方法を採用し、熱圧着については特開2005−77218号公報に記載の方法を採用することができる。これらの方法は1例であり、他の公知技術を用いても良い。
このように、マイクロチップ基板10、20の接合面からはSiO2膜が除去されており、接合面の樹脂同士が接触するので、樹脂を溶融させてマイクロチップ基板10、20を接合する接合方法が適用できる。すなわち、レーザ溶着、超音波溶着、又は熱圧着によって接合することができるため、接着剤などの物質を介さずにマイクロチップ基板10、20を接合することができる。そのことにより、微細流路31の内部に接着剤などの物質が染み出すおそれがない。
(変形例)
次に、上述した第1実施形態に係るマイクロチップの製造方法の変形例について説明する。第1実施形態では、マイクロチップ基板10、20の両基板に流路用溝を形成し、両基板にSiO2膜を形成するものであった。変形例では、表面に流路用溝が形成されたマイクロチップ基板と、平板状のマイクロチップ基板とを接合することでマイクロチップを製造する方法を説明する。
[第2の実施の形態]
次に、この発明の第2実施形態に係るマイクロチップの製造方法について、図3乃至図5を参照して説明する。図3乃至図5は、この発明の第2実施形態に係るマイクロチップの製造方法を説明するためのマイクロチップ基板の断面図である。
(実施例)
実施例では、第1実施形態に係るマイクロチップの製造方法の具体例について説明する。
(マイクロチップ基板の作製)
射出成形機で透明樹脂材料の環状ポリオレフィン樹脂(日本ゼオン社製、ゼオノア)を成形し、外形寸法が50mm×50mm×1mmの板状部材に幅50μm、深さ50μmの複数の流路用溝と、内径2mmの複数の貫通孔で構成される流路側マイクロチップ基板を作製した。この流路側マイクロチップ基板が、上記第1実施形態における流路用溝11が形成されたマイクロチップ基板10に相当する。
(SiO2膜の形成)
そして、機能製膜形成工程にて流路側マイクロチップ基板とカバー側マイクロチップ基板の流路用溝が形成された面(接合面)に、CVD装置(サムコ社製、PD−270ST)を使用してSiO2膜を形成した。CVDの原料は、TEOS(Tetra Ethoxy Silane)を使用した。流量を12sccm、酸素ガス流量を400sccm、RF出力を300W、圧力を50Pa、成膜レートを3nm/secにて、SiO2膜を200nm形成した。CVD装置を使用することで、幅50μm、深さ50μmの流路用溝、幅50μm、深さ30μmの流路用溝の内部にもSiO2膜を均一に形成することができた。流路用溝内部のSiO2膜の厚さは130nmであった。
(剥離)
次いで、機能製膜剥離工程にて、粘着部材を用いて流路側マイクロチップ基板とカバー側マイクロチップ基板の流路用溝以外の表面に形成されたSiO2膜を剥離した。この実施例では、粘着部材として、ニチバン社製粘着テープNO405を用いた。使用した粘着部材の厚さは0.05mm、粘着力は4.00N/cm2、幅は50mmであった。
(接合)
そして、接合工程にて、流路側マイクロチップ基板とカバー側マイクロチップ基板の流路用溝を内側にし、両基板の流路用溝の位置を合わせて、レーザ溶着機にて、出力が5W、10mm/secの走査速度でスキャンすることで基板同士を接合した。
(評価)
以上の工程を経ることで、内面がSiO2膜で覆われた微細流路が形成されたマイクロチップを製造することができる。また、流路側マイクロチップ基板とカバー側マイクロチップ基板の接合面にはSiO2膜が残存しないため、樹脂同士を接触させることが可能になり、レーザ溶着によってマイクロチップ基板同士を接合することができた。この実施例によると、内面がSiO2膜で覆われた微細流路を有するマイクロチップを、容易に作製することができた。
Claims (11)
- 2つの樹脂製基板を有し、前記2つの樹脂製基板のうち少なくとも一方の樹脂製基板の表面に流路用溝が形成され、前記流路用溝が形成された面を内側にして接合されたマイクロチップの製造方法において、
前記流路用溝が形成された面に機能性膜を形成する第1工程と、
粘着部材を前記機能性膜が形成された面に前記流路用溝以外の面に接着した後、剥離する第2工程と、
前記第2工程後、前記流路用溝が形成された面を内側にして前記2つの樹脂製基板を接合する第3工程と
含むことを特徴とするマイクロチップの製造方法。 - 前記流路用溝は前記2つの樹脂製基板両方の表面にそれぞれ形成されており、前記第3工程では、前記2つの樹脂製基板に形成された流路用溝をそれぞれ内側にし、互いに流路用溝の位置合わせを行って接合することを特徴とする請求項1に記載のマイクロチップの製造方法。
- 前記機能性膜はSiO2膜であることを特徴とする請求項1又は2のいずれかに記載のマイクロチップの製造方法。
- 前記第1工程では、前記流路用溝が形成された面に前記機能性膜の塗布溶液を塗布し、硬化させることで前記機能性膜を形成することを特徴とする請求項1乃至3のいずれか1項に記載のマイクロチップの製造方法。
- 前記第1工程では、スパッタリングによって前記機能性膜を形成することを特徴とする請求項1乃至3のいずれか1項に記載のマイクロチップの製造方法。
- 前記第1工程では、CVDによって前記機能性膜を形成することを特徴とする請求項1乃至3のいずれか1項に記載のマイクロチップの製造方法。
- 前記第3工程では、前記流路用溝が形成された面を内側にし、前記2つの樹脂製基板の接合する面を溶融することで、前記2つの樹脂製基板を接合することを特徴とする請求項1乃至6のいずれか1項に記載のマイクロチップの製造方法。
- 前記第3工程では、前記流路用溝が形成された面を内側にし、前記2つの樹脂製基板を加熱することで前記接合する面を溶融させ、前記2つの樹脂製基板を加圧することで、前記2つの樹脂製基板を接合することを特徴とする請求項1乃至7のいずれか1項に記載のマイクロチップの製造方法。
- 前記第3工程では、前記流路用溝が形成された面を内側にし、前記2つの樹脂製基板に対して超音波を印加することで前記接合する面を溶融させ、前記2つの樹脂製基板を加圧することで、前記2つの樹脂製基板を接合することを特徴とする請求項1乃至7のいずれか1項に記載のマイクロチップの製造方法。
- 前記第3工程では、前記流路用溝が形成された面を内側にし、前記2つの樹脂製基板に対してレーザを照射することで前記接合する面を溶融させ、前記2つの樹脂製基板を加圧することで、前記2つの樹脂製基板を接合することを特徴とする請求項1乃至7のいずれか1項に記載のマイクロチップの製造方法。
- 前記粘着部材はシート状の形状を有することを特徴とする請求項1乃至10のいずれか1項に記載のマイクロチップの製造方法。
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| PCT/JP2008/052948 WO2008108178A1 (ja) | 2007-03-02 | 2008-02-21 | マイクロチップの製造方法 |
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| EP (1) | EP2116853A4 (ja) |
| JP (1) | JP5229215B2 (ja) |
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| JPWO2008053720A1 (ja) * | 2006-10-31 | 2010-02-25 | コニカミノルタオプト株式会社 | マスター及びマイクロ反応器 |
| ES2706901T3 (es) * | 2009-01-06 | 2019-04-01 | Fujimori Kogyo Co Ltd | Conducto de vertido, método para producirlo y depósito para líquido dotado del conducto de vertido |
| CN102179831B (zh) * | 2011-04-06 | 2012-08-01 | 哈尔滨工业大学 | 一种微流控芯片的微沟道加工设备 |
| JP5733392B2 (ja) * | 2011-05-23 | 2015-06-10 | ウシオ電機株式会社 | 成形体の表面処理方法および環状オレフィン系樹脂を含む材料からなる成形体 |
| JP2016026904A (ja) * | 2012-12-07 | 2016-02-18 | アルプス電気株式会社 | 接合部材及び接合部材の製造方法 |
| CN103640211A (zh) * | 2013-12-23 | 2014-03-19 | 中国石油大学(华东) | 一种柔性材料辅助聚合物微结构超声波键合封装方法 |
| CN104925740B (zh) * | 2014-03-19 | 2017-06-16 | 中芯国际集成电路制造(上海)有限公司 | 一种利用激光退火改善热键合质量的方法 |
| JP6786930B2 (ja) * | 2015-07-31 | 2020-11-18 | 東レ株式会社 | 熱可塑性樹脂フィルムの製造方法 |
| CN107349976A (zh) * | 2016-05-10 | 2017-11-17 | 李榕生 | 一种试样驱动用附加件可快捷移除的梅毒诊断用装置 |
| JP2019093377A (ja) * | 2017-11-22 | 2019-06-20 | 株式会社エンプラス | 流体チップ、流体デバイスおよびそれらの製造方法 |
| KR101976082B1 (ko) * | 2018-01-25 | 2019-05-07 | (주)인텍바이오 | 진단 칩의 제작 방법 |
| JP7289718B2 (ja) * | 2019-05-13 | 2023-06-12 | 東京応化工業株式会社 | 流路デバイスの製造方法 |
| CN113874974B (zh) * | 2019-06-04 | 2025-02-25 | 三菱电机株式会社 | 接触件的制造方法、接触件以及断续器 |
| WO2022045355A1 (ja) * | 2020-08-31 | 2022-03-03 | 藤森工業株式会社 | 液体試料分析用マイクロチップの製造方法 |
| JP2024045877A (ja) * | 2022-09-22 | 2024-04-03 | Agc株式会社 | マイクロ流路デバイス |
| CN121398907A (zh) * | 2023-03-06 | 2026-01-23 | 悉尼大学 | 微流体装置及其形成方法 |
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| JP2004202336A (ja) * | 2002-12-25 | 2004-07-22 | Fuji Electric Systems Co Ltd | マイクロチャンネルチップ |
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| Publication number | Publication date |
|---|---|
| US20100012255A1 (en) | 2010-01-21 |
| KR20090117758A (ko) | 2009-11-12 |
| EP2116853A4 (en) | 2012-08-01 |
| CN101622542B (zh) | 2013-06-12 |
| EP2116853A1 (en) | 2009-11-11 |
| CN101622542A (zh) | 2010-01-06 |
| US7901527B2 (en) | 2011-03-08 |
| JPWO2008108178A1 (ja) | 2010-06-10 |
| WO2008108178A1 (ja) | 2008-09-12 |
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