JP5237306B2 - Semiconductor integrated circuit device and method for manufacturing semiconductor integrated circuit device - Google Patents

Description

  The present invention relates to a semiconductor integrated circuit device and a method for manufacturing the semiconductor integrated circuit device, and more particularly to a semiconductor integrated circuit device and a method for manufacturing the semiconductor integrated circuit device that can effectively cool a transistor of the semiconductor integrated circuit.

  As a mounting method for cooling a transistor of a semiconductor integrated circuit, a resin as described in Japanese Patent Application Laid-Open No. 07-235620 “Semiconductor device and manufacturing method thereof and mounting structure and mounting method thereof” is enclosed. However, the conventional cooling mounting methods represented by Patent Document 1 are sufficient because all the mounting methods are methods for indirectly cooling the semiconductor substrate. The cooling effect is not obtained.

Japanese Patent Application Laid-Open No. 07-235620

  The present invention has been made to solve the above-described problems, and by directly cooling a portion near a transistor on a semiconductor substrate, the cooling effect of the transistor is improved and the operation as a semiconductor integrated circuit is improved. An object of the present invention is to provide a semiconductor integrated circuit device and a method for manufacturing the semiconductor integrated circuit device that improve the stability.

  The present invention comprises the following technical means in order to solve the above-mentioned problems.

  According to a first technical means, a via hole is formed in a semiconductor substrate, a metal having thermal conductivity is embedded in the via hole, and both the front and back surfaces of the semiconductor substrate have thermal conductivity so as to contact the embedded metal. A semiconductor integrated circuit device having a structure in which a metal is attached and the metal attached to both the front and back surfaces of the semiconductor substrate is in contact with a package or a lid.

  According to a second technical means, a via hole is formed in a semiconductor substrate, a metal having thermal conductivity is embedded in the via hole, and both the front and back surfaces of the semiconductor substrate have thermal conductivity so as to contact the embedded metal. A metal is attached, the metal attached to the surface of the semiconductor substrate is brought into contact with the package and the lid, and the metal attached to the back surface of the semiconductor substrate is separated from the flip-chip mounted electrode and is brought into contact with the package A semiconductor integrated circuit device having the structure described above is provided.

  According to a third technical means, in the semiconductor integrated circuit device according to the first or second technical means, another material having a large cooling effect is used instead of each metal.

  According to a fourth technical means, in the semiconductor integrated circuit device according to the third technical means, a carbon or resin material is used as the other material used instead of the metal.

  According to a fifth technical means, after forming an integrated circuit on a semiconductor substrate, a first step of forming a via hole, a second step of burying a metal having thermal conductivity in the formed via hole, and the embedded step A third step of attaching a metal having thermal conductivity to both front and back surfaces of the semiconductor substrate so as to contact the metal; a fourth step of bringing the metal attached to the back surface of the semiconductor substrate into contact with a package; And a fifth step of bringing the metal attached to the surface of the semiconductor substrate into contact with a lid and the package.

  According to a sixth technical means, after forming an integrated circuit on a semiconductor substrate, a first step of forming a via hole, a second step of burying a metal having thermal conductivity in the formed via hole, and the embedded step A third step of attaching a metal having thermal conductivity to both the front and back surfaces of the via hole so as to contact the metal, and separating the metal attached to the back surface of the semiconductor substrate from the flip chip mounted electrode, A method of manufacturing a semiconductor integrated circuit device comprising at least a fourth step of contacting with a package and a fifth step of contacting the metal attached to the surface of the semiconductor substrate with a lid and the package. And

  A seventh technical means is the method for manufacturing a semiconductor integrated circuit device according to the sixth technical means, wherein, as the fourth step, the metal attached to the back surface of the semiconductor substrate is brought into contact with the package. Flip chip bonding is performed.

  According to an eighth technical means, in the method for manufacturing a semiconductor integrated circuit device according to any one of the fifth to seventh technical means, instead of the metals used in the second and third steps, Another material having a large cooling effect is used.

  According to a ninth technical means, in the method of manufacturing a semiconductor integrated circuit device according to the eighth technical means, a carbon or resin material is used as the other material used instead of the metal.

A tenth technical means is the method for manufacturing a semiconductor integrated circuit device according to any one of the fifth to ninth technical means, wherein the via hole masks any one of resist, SiO ₂ , SiN, Ni, or Ti. As described above, it is characterized in that it is formed by reactive ion etching using any one of chlorine, bromine and iodine gases.

  According to the semiconductor integrated circuit device and the method for manufacturing the semiconductor integrated circuit device of the present invention, since the structure capable of directly cooling a portion close to the transistor on the semiconductor substrate is employed, the following effects can be achieved. Can do.

  The first effect is that it is possible to manufacture a semiconductor integrated circuit module that can operate stably up to the high frequency band of the submillimeter wave band (30 to 300 GHz).

  The second effect is that a semiconductor integrated circuit module that can operate stably even with a transistor having a high power density can be manufactured.

It is a schematic diagram showing an example of a cross-sectional structure of a semiconductor integrated circuit device according to the present invention. It is a schematic diagram showing an example of a cross-sectional structure of a semiconductor integrated circuit device when a flip chip mounting method is applied as a method for manufacturing a semiconductor integrated circuit device according to the present invention.

  Hereinafter, preferred embodiments of a semiconductor integrated circuit device and a method for manufacturing the semiconductor integrated circuit device according to the present invention will be described in detail with reference to the drawings.

(Features of the present invention)
Prior to the description of the embodiments of the present invention, an outline of the features of the present invention will be described first. The present invention makes it possible to directly cool a portion of an integrated circuit on a semiconductor substrate that is close to the transistor, thereby improving the cooling effect of the semiconductor substrate, and thus improving the cooling effect of the transistor. The main feature is that the operation can be stabilized.

  More specifically, a via hole is formed in the semiconductor substrate, and a metal having thermal conductivity is embedded in the via hole (that is, a metal having thermal conductivity is embedded in the via hole penetrating the semiconductor wafer). A feature is that a metal having thermal conductivity is attached to both the front and back surfaces so as to be in contact with the metal embedded in the via hole, and the attached metal is brought into contact with a package or a lid to be mounted.

(Embodiment of the present invention)
Next, an example of a method for manufacturing a semiconductor integrated circuit device according to the present invention will be described with reference to FIG. FIG. 1 is a schematic diagram showing an example of a cross-sectional structure of a semiconductor integrated circuit device according to the present invention.

  As shown in the cross-sectional structure of FIG. 1, in the present semiconductor integrated circuit device, via holes 2 are formed in a plurality of predetermined positions on the semiconductor substrate 1 as appropriate positions for directly cooling the vicinity of the transistors of the integrated circuit. The via holes 2 thus formed are filled with a metal 3 having thermal conductivity. Further, the metal 4 and 5 are attached to both the front and back surfaces of the semiconductor substrate 1 so as to contact the metal 3 embedded in each via hole 2, and the metal 4 attached to the front surface side is brought into contact with the package 6 and the lid 7. The metal 5 attached to is brought into contact with the package 6.

  Also, an example of a cross-sectional structure of a semiconductor integrated circuit in the case of adopting flip chip mounting (FTA) in which electrodes are directly formed on a chip and bonded in order to reduce size, thickness and density Is shown in FIG. FIG. 2 is a schematic diagram showing an example of a cross-sectional structure of a semiconductor integrated circuit device when a flip chip mounting method is applied as a method for manufacturing a semiconductor integrated circuit device according to the present invention.

  As shown in the cross-sectional structure of FIG. 2, even when the flip chip mounting method is applied, as in the case of FIG. 1, the semiconductor substrate 1 has an appropriate position for directly cooling the vicinity of the transistor of the integrated circuit. Via holes 2 are formed at a plurality of predetermined positions, and a metal 3 having thermal conductivity is buried in each formed via hole 2. Furthermore, the metal 4 and 5 which has thermal conductivity are attached to both the front and back surfaces of the semiconductor substrate 1 so as to contact the metal 3 embedded in each via hole 2, and the metal 4 attached to the front side is attached to the package 6 and the lid 7. The metal 5 attached to the back side is brought into contact with the package 6 separately from the electrode 8.

  In place of the metal 3, 4 and 5 having thermal conductivity, other materials having thermal conductivity and a large cooling effect, such as carbon or resin, may be used.

  By using such a mounting method, it is possible to directly cool a portion on the semiconductor substrate 1 close to the transistor, thus improving the cooling effect of the transistor and stabilizing the operation of the semiconductor integrated circuit. Is possible. As a result, for example, a semiconductor integrated circuit module that operates stably up to the high frequency band of the submillimeter wave band (30 to 300 GHz) can be manufactured, and even a transistor with high power density operates stably. A semiconductor integrated circuit module can be manufactured.

  Next, several examples will be described as specific examples relating to the method of manufacturing the semiconductor integrated circuit device having the cross-sectional structure shown in FIGS.

This embodiment shows an example of a manufacturing method of the semiconductor integrated circuit device having the cross-sectional structure shown in FIG. After manufacturing a semiconductor integrated circuit on the InP substrate or GaAs substrate of the semiconductor substrate 1, as a first step, the via hole 2 of about 100 μm □ (or 100 μmφ) is directly cooled in the vicinity of the transistor of the semiconductor integrated circuit. Are formed at a plurality of predetermined positions. Here, in order to form the via hole 2, for example, reactive ion etching (reactive ion etching) using a gas such as chlorine, bromine, iodine or the like using a resist, SiO ₂ , SiN, Ni, or Ti as a mask. Ion Etching).

  Next, as a second step, a metal 3 having thermal conductivity is embedded in the formed via hole 2 by plating.

  Next, as a third step, the metals 4 and 5 are formed on the front and back of the semiconductor substrate 1 by plating or a lift-off method so as to contact the metal 3 embedded in the via hole 2.

  Next, as a fourth step, die bonding is performed so that the metal 5 attached on the back surface of the semiconductor substrate 1, that is, the metal 5 formed on the back surface of the metal 3 embedded in the via hole 2 comes into contact with the package 6.

  Thereafter, after wiring is formed on the integrated circuit on the semiconductor substrate 1 and the package 6 by wire bonding or the like, the metal 4 attached on the surface of the semiconductor substrate 1 to the package 6 and the lid 7 as a fifth step. That is, the sealing is performed by bringing the metal 4 formed on the surface of the metal 3 embedded in the via hole 2 into contact.

This embodiment shows an example of a method for manufacturing the semiconductor integrated circuit device having the cross-sectional structure shown in FIG. After the semiconductor integrated circuit is manufactured on the InP substrate or GaAs substrate of the semiconductor substrate 1, as in the case of the first embodiment, as a first step, a via hole 2 of about 100 μm □ (or 100 μmφ) is formed in the semiconductor integrated circuit. The vicinity of the transistor is formed at a plurality of predetermined positions as appropriate positions for direct cooling. Here, in order to form the via hole 2, as in the case of Example 1, for example, a gas such as chlorine, bromine, iodine, etc., using resist, SiO ₂ , SiN, Ni, Ti or the like as a mask. Reactive Ion Etching is used.

  Next, as in the case of Example 1, as a second step, a metal 3 having thermal conductivity is embedded in the formed via hole 2 by plating.

  Next, as in the case of the first embodiment, as a third step, the metals 4 and 5 are formed on the front and back surfaces of the semiconductor substrate 1 by plating or a lift-off method so as to come into contact with the metal 3 embedded in the via hole 2.

  Next, unlike the case of the first embodiment, as a fourth step, the metal 5 attached on the back surface of the semiconductor substrate 1, that is, the metal 5 formed on the back surface of the metal 3 embedded in the via hole 2 is flip-chip mounted. Flip chip bonding is performed so as to be separated from the electrode 8 and to come into contact with the package 6.

  Thereafter, after wiring is formed on the integrated circuit and the package 6 on the semiconductor substrate 1 by wire bonding or the like, as in the case of the first embodiment, as a fifth step, the package 6 and the lid 7 are connected to the semiconductor substrate. Sealing is performed by contacting the metal 4 attached on the surface of 1, that is, the metal 4 formed on the surface of the metal 3 embedded in the via hole 2.

  In this embodiment, carbon having a large cooling effect is used in place of the metals 3, 4 and 5 in the first and second embodiments.

  In this embodiment, a resin having a large cooling effect is used in place of the metals 3, 4, and 5 in Embodiments 1 and 2 described above.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor substrate, 2 ... Via hole, 3 ... Metal, 4 ... Metal, 5 ... Metal, 6 ... Package, 7 ... Lid, 8 ... Electrode.

Claims (10)

  A via hole is formed in a semiconductor substrate, a metal having thermal conductivity is embedded in the via hole, and a metal having thermal conductivity is attached to both the front and back surfaces of the semiconductor substrate so as to contact the embedded metal, and the semiconductor substrate A semiconductor integrated circuit device having a structure in which the metal attached to both the front and back surfaces is in contact with a package or a lid.   A via hole is formed in a semiconductor substrate, a metal having thermal conductivity is embedded in the via hole, and a metal having thermal conductivity is attached to both the front and back surfaces of the semiconductor substrate so as to contact the embedded metal, and the semiconductor substrate A metal having thermal conductivity is attached to both front and back surfaces of the semiconductor substrate, the metal attached to the front surface of the semiconductor substrate is brought into contact with a package and a lid, and the metal attached to the back surface of the semiconductor substrate is flip-chip mounted. A semiconductor integrated circuit device having a structure in which is separated and brought into contact with the package.   3. The semiconductor integrated circuit device according to claim 1, wherein another material having a large cooling effect is used instead of each metal.   4. The semiconductor integrated circuit device according to claim 3, wherein a carbon or resin material is used as the other material used in place of the metal.   After forming an integrated circuit on a semiconductor substrate, a first step of forming a via hole, a second step of embedding a metal having thermal conductivity in the formed via hole, and a contact with the embedded metal, A third step of attaching a metal having thermal conductivity to both front and back surfaces of the semiconductor substrate; a fourth step of bringing the metal attached to the back surface of the semiconductor substrate into contact with a package; and attaching the metal to the surface of the semiconductor substrate. And a fifth step of bringing the metal into contact with the lid and the package. A method for manufacturing a semiconductor integrated circuit device, comprising:   After forming an integrated circuit on a semiconductor substrate, a first step of forming a via hole, a second step of embedding a metal having thermal conductivity in the formed via hole, and a contact with the embedded metal, A third step of attaching a metal having thermal conductivity to both the front and back surfaces of the via hole, and a fourth step of bringing the metal attached to the back surface of the semiconductor substrate into contact with the package while separating the metal from the flip chip mounted electrode. A method for manufacturing a semiconductor integrated circuit device, comprising at least a step and a fifth step of bringing the metal attached to the surface of the semiconductor substrate into contact with a lid and the package.   7. The method of manufacturing a semiconductor integrated circuit device according to claim 6, wherein, as the fourth step, flip chip bonding is performed to bring the metal attached to the back surface of the semiconductor substrate into contact with the package. A method for manufacturing a semiconductor integrated circuit device.   8. The method of manufacturing a semiconductor integrated circuit device according to claim 5, wherein another material having a large cooling effect is used in place of each of the metals used in the second and third steps. A method of manufacturing a semiconductor integrated circuit device.   9. The method of manufacturing a semiconductor integrated circuit device according to claim 8, wherein a carbon or resin material is used as the other material used instead of the metal. The method for manufacturing a semiconductor integrated circuit device according to any one of claims 5 to 9, wherein the via hole, resist, SiO 2, _SiN, one of Ni or Ti as a mask, chlorine, bromine system, the iodine A method of manufacturing a semiconductor integrated circuit device, wherein the method is formed by reactive ion etching using any gas.

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