JP5240302B2 - Vapor processing equipment - Google Patents

Description

  The present invention relates to a gas phase processing apparatus, and more particularly to a gas phase processing apparatus including a susceptor that holds an object to be processed.

  A semiconductor manufacturing apparatus having a susceptor for holding a substrate is widely used. As such a semiconductor manufacturing apparatus, for example, there is a chemical vapor deposition (CVD) apparatus having a growth chamber and a preliminary chamber. The growth chamber is a chamber in which vapor phase growth is performed on the substrate, and a gas for that purpose is flowed. The spare chamber is generally provided with a susceptor on which a substrate is placed, a susceptor rotation mechanism, and a heater, and a purge gas is allowed to flow therethrough. For example, according to Japanese Patent Application Laid-Open No. 2010-199382, a semiconductor manufacturing apparatus is installed on a reaction tube having an opening, a susceptor installed inside the opening, a heater for heating the susceptor, and an outer periphery of the susceptor. And a frame rotatable with the susceptor, and a susceptor support for supporting the frame.

JP 2010-199382 A

  In the semiconductor manufacturing apparatus described above, there is a difference in the degree of thermal expansion between the susceptor support (susceptor guide) that becomes high as the susceptor is heated and the reaction tube (chamber as a growth chamber) that is at a lower temperature. Arise. For example, when epitaxial growth of a GaN film is performed, the susceptor is heated to a high temperature of about 1000 ° C., so the difference in the degree of thermal expansion becomes significant. Therefore, if the susceptor guide and the chamber are constrained to each other, the apparatus may be distorted due to the generation of thermal stress. As one method for preventing the two from being restrained from each other, a method of providing a gap between the susceptor guide and the chamber is conceivable.

  However, the gap may generate at least one of inflow of gas from the outside to the inside of the growth chamber and outflow of gas from the inside of the growth chamber to the outside. In that case, the atmosphere in the growth chamber may be disturbed. Specifically, the pressure in the growth chamber may be disturbed, or the impurity gas may be mixed into the atmosphere in the growth chamber. This impurity gas is, for example, a gas caused by a purge gas that flows into the spare chamber or moisture remaining in the spare chamber.

  The above-mentioned disturbance of the atmosphere can be a problem particularly when the semiconductor manufacturing apparatus is used for epitaxial film formation by vapor phase growth. Specifically, the in-plane distribution of the obtained thin film may deteriorate, or the concentration of impurities may increase. In particular, when an impurity gas caused by moisture flows into the growth chamber, oxygen atoms are taken in, which can adversely affect the physical properties of the thin film. Further, when the raw material gas used as the raw material of the thin film is corrosive like ammonia, the mechanism provided in the preliminary chamber may be corroded by the outflow of the raw material gas into the preliminary chamber.

  As described above, in the conventional technique, at least one of inflow of gas from the outside to the inside of the chamber and outflow of gas from the inside to the outside of the chamber is likely to occur through the gap between the susceptor guide and the chamber. It was. As a result, the atmosphere in the chamber may be disturbed. The present invention has been made in view of this problem, and an object of the present invention is to provide a vapor phase processing apparatus capable of stabilizing the atmosphere in the chamber.

  The vapor phase processing apparatus of the present invention includes a susceptor, a chamber, a gas introduction unit, a heater, a susceptor guide, and first and second ring units. The susceptor holds a processing object. The chamber is provided with a hole that surrounds the susceptor at an interval. The gas introduction unit introduces a gas for performing a vapor phase process on the object to be processed into the chamber. The heater is configured to heat the susceptor to one temperature. The susceptor guide is disposed outside the chamber, rotatably holds the susceptor, and has a first outer peripheral surface. The first ring portion is attached to the chamber so as to surround the hole portion, and has a first inner peripheral surface. The second ring portion has a second outer peripheral surface facing the first inner peripheral surface and a second inner peripheral surface facing the first outer peripheral surface, and is attached to the susceptor guide. Made from porous metal.

  According to this vapor phase processing apparatus, since the second ring portion is made of a porous metal body, the second ring portion is pressed against the first ring portion due to the thermal expansion of the susceptor guide. The second ring portion is easily compressed and deformed. Due to this deformation, the force exerted by the second ring portion on the first ring portion is reduced, so that the occurrence of distortion in the portion other than the second ring portion of the device is suppressed. That is, even if the second ring portion is pressed against the first ring portion as the susceptor guide is thermally expanded, there is no significant adverse effect on the apparatus. Therefore, since it is not necessary to always keep a gap between the first and second ring portions, the first and second ring portions are arranged very close to each other or arranged so as to be in contact with each other. be able to. Thereby, since the flow of the gas which passes between between the 1st and 2nd ring parts can be controlled, the atmosphere in a chamber can be stabilized.

  Preferably, the first inner peripheral surface of the first ring portion and the second outer peripheral surface of the second ring portion are in contact with each other when the temperature of the susceptor is one temperature. Thereby, when processing the process target object hold | maintained at the susceptor heated to one temperature, the atmosphere of a chamber is stabilized more reliably.

  Preferably, the second outer peripheral surface of the second ring portion is configured to press the first inner peripheral surface of the first ring portion by thermal expansion when the temperature of the susceptor is one temperature. . Thereby, when processing the process target object hold | maintained at the susceptor heated to one temperature, the atmosphere of a chamber is stabilized more reliably.

  Preferably, the first inner peripheral surface of the first ring portion and the second outer peripheral surface of the second ring portion are in contact with each other when the susceptor is at room temperature. Thereby, the flow of gas passing between the first and second ring portions can be suppressed until the susceptor is heated to one temperature.

  Preferably, the first outer peripheral surface of the susceptor guide is configured to press the second inner peripheral surface of the second ring portion by thermal expansion when the temperature of the susceptor is one temperature. Thereby, when processing the processing object held by the susceptor heated to one temperature, the second ring portion is deformed outward, that is, toward the first ring portion. And the gap between the second ring part is reduced or removed. Thereby, since the flow of the gas which passes between between the 1st and 2nd ring parts can be controlled, the atmosphere in a chamber can be stabilized.

  Preferably, the pore diameter of the metal porous body is 0.5 mm or more and 1 mm or less. When the pore diameter is 0.5 mm or more, the porous metal body can be sufficiently deformed. Moreover, when the hole diameter is 1 mm or less, gas leakage through the holes of the porous body can be suppressed.

  Preferably, the second ring portion includes a first portion having a first density and a second portion having a second density higher than the first density. As a result, the ease of deformation of the second ring portion is ensured by the first portion, and at the same time, the portion requiring airtightness is made the second portion, so that it can pass through the hole of the metal porous body. Gas leakage can be suppressed.

  Preferably, the second portion of the second ring portion has a surface as a second outer peripheral surface of the second ring portion. Thereby, the surface which opposes the internal peripheral surface of a 1st ring part of a 2nd ring part is comprised by the part which has a high density. Thereby, since the flow of the gas which passes between between the 1st and 2nd ring parts can be controlled, the atmosphere in a chamber can be stabilized.

  Preferably, the second portion of the second ring portion has a portion in contact with the susceptor guide. Thereby, since the flow of the gas passing between the second ring portion and the susceptor guide can be suppressed, the atmosphere in the chamber can be stabilized.

  Preferably, the metal porous body contains at least one of nickel, chromium, iron, copper, stainless steel, manganese, molybdenum, tungsten, titanium, and aluminum.

  According to the present invention, as described above, the atmosphere in the chamber can be stabilized.

It is sectional drawing which shows schematically the structure of the CVD apparatus as a gaseous-phase processing apparatus in Embodiment 1 of this invention. FIG. 2 is a partially enlarged view of FIG. 1. It is a top view which shows roughly the structure of the 1st ring part which the apparatus of FIG. 1 has. It is a top view which shows roughly the structure of the 2nd ring part which the apparatus of FIG. 1 has. FIG. 3 is a partially enlarged view showing a state in which a susceptor included in the apparatus of FIG. 1 is displaced in the same field of view as FIG. 2. It is sectional drawing which shows schematically the 1st process of the formation method of the thin film in Embodiment 1 of this invention. FIG. 7 is a partially enlarged view of FIG. 6. It is a partial cross section figure which shows schematically the 2nd process of the formation method of the thin film in Embodiment 1 of this invention. It is sectional drawing which shows schematically the 3rd process of the formation method of the thin film in Embodiment 1 of this invention. It is a partial cross section figure which shows schematically the 4th process of the formation method of the thin film in Embodiment 1 of this invention. It is a partial cross section figure which shows schematically the 5th process of the formation method of the thin film in Embodiment 1 of this invention. It is a partial cross section figure which shows schematically the 6th process of the formation method of the thin film in Embodiment 1 of this invention. It is sectional drawing which shows schematically the structure of the 2nd ring part which the CVD apparatus as a vapor phase processing apparatus in Embodiment 2 of this invention has. It is sectional drawing which shows the modification of the 2nd ring part of FIG. 13 roughly.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
1 to 4, a CVD apparatus 100 (vapor phase processing apparatus) of the present embodiment includes a susceptor 3, a growth chamber 5 (chamber), a heater 7, a gas introduction unit 9, and a gas discharge. Part 11, rotating shaft 17, joint 19, motor 20, susceptor guide 21, gantry 22, susceptor holder 23, ring part 31 (first ring part), ring part 32 (second part Ring portion), a spare chamber 35, and a drive unit 40.

  The growth chamber 5 is provided with a hole HL that surrounds the susceptor 3 with a space therebetween. In addition, a gas introduction unit 9 and a gas discharge unit 11 are connected to the growth chamber 5. The gas introduction part 9 is a part for introducing a source gas having a desired flow rate into the growth chamber 5. The gas discharge part 11 is a part for discharging used gas from the growth chamber 5. The preliminary chamber 35 is provided adjacent to the growth chamber 5 (adjacent to the lower side of the growth chamber 5 in FIG. 1).

  The susceptor 3 has a holding surface RP that holds a processing object such as a substrate. This holding is performed, for example, by placing the processing object on the holding surface RP. In the present embodiment, a susceptor holder 23 having an annular shape in plan view is fixed to the outer periphery of the susceptor 3 having a circular shape in plan view. The susceptor 3 is arranged to receive a rotational force (arrow AR). For this purpose, the susceptor 3 is connected to the motor 20 via the rotating shaft 17 and the joint 19, for example.

  The heater 7 is configured to be able to heat the susceptor 3 to a set temperature (one temperature) higher than room temperature in order to heat the process symmetrical object. The set temperature is specifically 900 ° C. or higher, for example, about 1000 ° C.

  The susceptor guide 21 is disposed in the preliminary chamber 35, that is, outside the growth chamber 5, and has an outer peripheral surface SO1 (first outer peripheral surface). In the present embodiment, the outer periphery of the susceptor 3 to which the susceptor holder 23 is fixed is rotatably held by a susceptor guide 21 having an annular shape in plan view. That is, the susceptor guide 21 holds the susceptor 3 rotatably. Specifically, the susceptor guide 21 and the susceptor holder 23 constitute a bearing. In order to allow the susceptor holder 23 to rotate without resistance with respect to the susceptor guide 21, a rolling element 29 may be provided between the two. Since the susceptor guide 21 is attached to the susceptor 3 heated to a high temperature, the susceptor guide 21 is made of a material suitable for use at a high temperature. An example of such a material is BN (boron nitride).

  The ring portion 31 is attached to the growth chamber 5 so as to surround the hole portion HL, and has an annular shape having an inner peripheral surface SI1 (first inner peripheral surface). In the present embodiment, the ring portion 31 is made of Ni (nickel). Ring portion 31 may be made of Mo (molybdenum), SiC (silicon carbide), or C (carbon). The ring portion 31 may be made of Inconel (trademark).

  The ring portion 32 includes an outer peripheral surface SO2 (second outer peripheral surface) facing the inner peripheral surface SI1 of the ring portion 31, and an inner peripheral surface SI2 (second inner peripheral surface) facing the outer peripheral surface SO1 of the susceptor guide 21. And has an annular shape. The ring portion 32 is attached to the susceptor guide 21. The ring part 32 is made of a metal porous body. The metal porous body is a material having a large number of pores inside. The pore diameter is preferably 0.5 mm or more and 1 mm or less. For example, Celmet (registered trademark) can be used as the porous metal body.

  Preferably, the ring portion 32 has a hook-like shape and has a hook portion PM extending inward. In this case, the ring portion 32 is attached to the susceptor guide 21 by hooking the hook portion PM to the shoulder portion SD (upper right corner portion in FIG. 2) of the susceptor guide 21.

  Preferably, the metal porous body contains at least one of nickel, chromium, iron, copper, stainless steel, manganese, molybdenum, tungsten, titanium, and aluminum. More preferably, the metal porous body is a simple substance having any one element of nickel, chromium, iron, copper, stainless steel, manganese, molybdenum, tungsten, titanium, and aluminum, or an alloy having a plurality of elements. . In addition, when the gas introduce | transduced from a gas introduction part contains corrosive gas, such as ammonia, it is preferable to avoid use of copper and aluminum among the said elements.

  Preferably, ring portion 32 is configured to be easily cooled, and may be water-cooled, for example.

  A portion where the inner peripheral surface SI1 of the ring portion 31 and the outer peripheral surface SO2 of the ring portion 32 face each other extends in a direction intersecting the holding surface RP of the susceptor 3, and is preferably in a direction perpendicular to the holding surface RP (see FIG. (Middle, vertical direction).

  Preferably, inner peripheral surface SI1 of ring portion 31 and outer peripheral surface SO2 of ring portion 32 are in contact with each other when the temperature of susceptor 3 is a set temperature. More preferably, the outer peripheral surface SO2 of the ring portion 32 is configured to press the inner peripheral surface SI1 of the ring portion 31 by thermal expansion when the temperature of the susceptor 3 is a set temperature. More preferably, the inner peripheral surface SI1 of the ring portion 31 and the outer peripheral surface SO2 of the ring portion 32 are in contact with each other even when the susceptor 3 is at room temperature.

  Preferably, the outer peripheral surface SO1 of the susceptor guide 21 is configured to press the inner peripheral surface SI2 of the ring portion 32 by thermal expansion when the temperature of the susceptor 3 is a set temperature, as will be described later.

  Preferably, ring portion 31 has a protruding portion PL protruding inward (left side in FIG. 2). The projecting portion PL is disposed away from the ring portion 32, and is disposed so as to sandwich the ring portion 32 with the growth chamber 5 along the height direction (vertical direction in FIG. 2).

  The gas introduction unit 9 introduces a source gas into the growth chamber 5. The gas introduction unit 9 may have a mass flow for controlling the flow rate of the introduced gas. The gas discharge unit 11 discharges used gas from the growth chamber 5. The gas discharge part 11 may have a valve for adjusting the flow rate of the discharged gas.

  The drive unit 40 includes a portion that is driven in a direction (arrow AL) intersecting the holding surface RP, and is configured such that the susceptor guide 21 is displaced by driving this portion. For example, the drive unit 40 has a movable cylinder 41. The movable cylinder 41 displaces the susceptor guide 21 via the gantry 22.

Next, a method for using the CVD apparatus 100 will be described.
Referring to FIG. 1, when driving unit 40 is driven, movable cylinder 41 is displaced downward as shown by arrow AL.

  With reference to FIG. 5, the susceptor 3 is displaced from the position surrounded by the hole HL of the growth chamber 5 (FIG. 2) to a position suitable for carrying in the processing object. In the middle of this displacement, the ring portion 32 is placed on the protruding portion PL of the ring portion 31, and as a result, the ring portion 32 is removed from the susceptor guide 21.

  Further, referring to FIG. 6 and FIG. 7, after the substrate SBa as the object to be processed is placed on the susceptor 3, the movable cylinder 41 is displaced upward as indicated by the arrow AM. Thereby, the susceptor 3 on which the substrate SBa is placed is displaced to a position surrounded by the hole HL of the growth chamber 5. In the middle of this displacement, the ring portion 32 is attached to the susceptor guide 21 again.

  Next, the susceptor 3 is rotated by the motor 20. Further, the temperature of the susceptor 3 is heated to a set temperature using the heater 7. This set temperature is about 1000 ° C., for example. Thereby, the temperature of the substrate SBa is set to a temperature suitable for film formation.

  Referring to FIG. 8, as a result of the heating, the susceptor guide 21 is thermally expanded, so that the outer peripheral surface SO1 of the susceptor guide 21 is displaced outward. Thereby, the outer peripheral surface SO1 of the susceptor guide 21 presses the inner peripheral surface SI2 of the ring portion 32. As a result, the outer peripheral surface SO2 of the ring portion 32 can reliably contact and be pressed against the inner peripheral surface SI1 of the ring portion 31. When the outer peripheral surface SO2 of the ring portion 32 is pressed against the inner peripheral surface SI1 of the ring portion 31, the ring portion 32 is compressed and deformed by being sandwiched between the susceptor guide 21 and the ring portion 31. When the outer peripheral surface SO2 of the ring portion 32 does not contact the inner peripheral surface of the ring portion 31, the gap between the outer peripheral surface SO2 of the ring portion 32 and the inner peripheral surface SI1 of the ring portion 31 is further reduced.

  Referring to FIG. 9, the source gas is then introduced from the gas introduction unit 9 into the growth chamber 5, and unnecessary gas in the growth chamber 5 is discharged from the gas discharge unit 11. As a result, the thin film FM is formed on the substrate SBa using the source gas as a source material. A purge gas may be flowed into the preliminary chamber 35 during film formation. When a GaN thin film is formed as the thin film FM, the source gas is, for example, a mixed gas containing ammonia, nitrogen, hydrogen, and an organic metal. As the purge gas, for example, nitrogen or nitrogen mixed with hydrogen can be used. After the formation of the thin film FM, the gas introduction unit 9 stops the introduction of the source gas.

  Referring to FIG. 10, the temperature of susceptor 3 is lowered from the set temperature. As a result, the temperature of the susceptor guide 21 also drops. As a result, since the susceptor 3 contracts, the outer peripheral surface SO1 of the susceptor guide 21 is displaced inward (left side in the figure). As a result, as the distance between the outer peripheral surface SO1 of the susceptor guide 21 and the inner peripheral surface SI1 of the ring portion 31 increases, the compressive stress of the ring portion 32 begins to be released. Further, when this interval further increases after the compression stress is released, a gap may be formed between the outer peripheral surface SO1 of the susceptor guide 21 and the inner peripheral surface SI2 of the ring portion 32. After the temperature of the susceptor 3 is sufficiently lowered, the movable cylinder 41 is displaced downward as indicated by an arrow AL. Next, the substrate SBa on which the thin film FM is formed is taken out.

  Referring to FIG. 11, after another substrate SBb is placed on susceptor 3, movable cylinder 41 is displaced upward as indicated by arrow AM. Next, the susceptor 3 is rotated by the motor 20. Further, the temperature of the susceptor 3 is heated again to the set temperature using the heater 7.

  Further, referring to FIG. 12, the susceptor guide 21 is thermally expanded again with the heating, whereby the outer peripheral surface SO <b> 1 of the susceptor guide 21 is pressed against the inner peripheral surface SI <b> 2 of the ring portion 32. Next, a thin film is formed on the substrate SBb by the same method as described above.

  According to the CVD apparatus 100 of the present embodiment, since the ring portion 32 is made of a porous metal body, the ring portion 32 is pressed against the ring portion 31 due to the thermal expansion of the susceptor guide 21. The part 32 is easily compressed and deformed. Due to this deformation, the force exerted by the ring portion 32 on the ring portion 31 is reduced, so that the occurrence of strain in portions other than the ring portion 32 in the CVD apparatus 100 is suppressed. That is, even if the ring portion 32 is pressed against the ring portion 31 as the susceptor guide 21 is thermally expanded, the CVD apparatus 100 is not greatly adversely affected. Therefore, even if a gap is not always secured between the ring portions 31 and 32, it is possible to avoid the occurrence of distortion that adversely affects the CVD apparatus 100. For this reason, the ring parts 31 and 32 can be arrange | positioned in the position very close to each other, or can be arrange | positioned so that it may contact. Thereby, since the flow of the gas through between the ring parts 31 and 32 can be suppressed, the atmosphere in the growth chamber 5 can be stabilized. Thereby, a higher quality thin film FM (FIG. 10) can be formed.

  Preferably, inner peripheral surface SI1 of ring portion 31 and outer peripheral surface SO2 of ring portion 32 are in contact with each other when the temperature of susceptor 3 is a set temperature. Thereby, when processing the substrates SBa and SBb held on the susceptor 3 heated to the set temperature, the atmosphere of the growth chamber 5 is more reliably stabilized.

  Preferably, the outer peripheral surface SO2 of the ring portion 32 is configured to press the inner peripheral surface SI1 of the ring portion 31 by thermal expansion when the temperature of the susceptor 3 is a set temperature. Thereby, when processing the substrates SBa and SBb held on the susceptor 3 heated to the set temperature, the atmosphere of the growth chamber 5 is more reliably stabilized.

  Preferably, inner peripheral surface SI1 of ring portion 31 and outer peripheral surface SO2 of ring portion 32 are in contact with each other when susceptor 3 is at room temperature. Thereby, the flow of the gas passing between the ring portions 31 and 32 can be suppressed until the susceptor 3 is heated to the set temperature.

  Preferably, the outer peripheral surface SO1 of the susceptor guide 21 is configured to press the inner peripheral surface SI2 of the ring portion 32 by thermal expansion when the temperature of the susceptor 3 is a set temperature. Accordingly, when the substrates SBa and SBb held on the susceptor 3 heated to the set temperature are processed, the ring portion 32 is deformed outward, that is, toward the ring portion 31, so that the ring portions 31 and 32 are formed. The gap between is reduced or removed. Thereby, since the flow of the gas through between the ring parts 31 and 32 can be suppressed, the atmosphere in the growth chamber 5 can be stabilized.

  Preferably, the pore diameter of the porous metal body of the ring portion 32 is not less than 0.5 mm and not more than 1 mm. When the pore diameter is 0.5 mm or more, the porous metal body can be sufficiently deformed. Moreover, when the hole diameter is 1 mm or less, gas leakage through the holes of the porous body can be suppressed.

(Embodiment 2)
Referring mainly to FIG. 12, the CVD apparatus of the present embodiment has a ring part 32 a instead of ring part 32 of CVD apparatus 100 of the first embodiment. The ring portion 32a includes a low density portion 32a1 (first portion) having a first density and a high density portion 32a2 (second portion) having a second density higher than the first density. In the present embodiment, high-density portion 32a2 has a surface as outer peripheral surface SO2 of ring portion 32a.

Preferably, the width (lateral dimension in FIG. 13) of the low density portion 32a1 between the inner peripheral surface SI2 and the outer peripheral surface SO2 is less than half of the width between the inner peripheral surface SI2 and the outer peripheral surface SO2. Preferably, the density of the low density portion 32a1 is 0.2 g / cm ³ or more and less than 0.5 g / cm ³ , and the density of the high density portion 32a2 is 0.5 g / cm ³ or more and 1.0 g / cm ^3. It is as follows. More preferably, the density of the low density portion 32a1 is not more than half the density of the high density portion 32a2.

  Since the configuration other than the above is substantially the same as the configuration of the first embodiment described above, the same or corresponding elements are denoted by the same reference numerals, and description thereof is not repeated.

  According to the present embodiment, the ring portion 32a includes the low density portion 32a1 having the first density and the high density portion 32a2 having the second density higher than the first density. As a result, the ease of deformation of the ring portion 32a is ensured by the low-density portion 32a1, and at the same time, the portion requiring airtightness is made the high-density portion 32a2, thereby allowing gas leakage through the hole of the metal porous body. Can be suppressed.

  Specifically, the high density portion 32a2 of the ring portion 32a has a surface as the outer peripheral surface SO2 of the ring portion 32a. Thereby, the surface which opposes inner peripheral surface SI1 (FIG. 2) of the ring part 31 of the ring part 32a is comprised by the part which has a high density. Thereby, since the flow of the gas passing between the ring parts 32a (FIG. 13) and 31 (FIG. 2) can be suppressed, the atmosphere in the growth chamber 5 can be stabilized.

  Referring mainly to FIG. 14, in the modification of the present embodiment, ring portion 32b is used instead of ring portion 32a described above. The ring portion 32b includes a low density portion 32b1 having a first density and a high density portion 32b2 having a second density higher than the first density. The high density portion 32b2 has a portion in contact with the susceptor guide 21 (FIG. 2). Thereby, since the flow of the gas passing between the ring portion 32b and the susceptor guide 21 can be suppressed, the atmosphere in the growth chamber 5 can be stabilized.

  Preferably, the width (lateral dimension in FIG. 14) of the low density portion 32b1 between the inner peripheral surface SI2 and the outer peripheral surface SO2 is equal to or greater than 1/3 of the width between the inner peripheral surface SI2 and the outer peripheral surface SO2. 2 or less.

  In each of the above-described embodiments, the CVD apparatus has been described as the vapor processing apparatus. However, the vapor processing apparatus is not limited to the CVD apparatus, and a controlled atmosphere is applied to the heated object to be processed. Any apparatus that performs vapor phase processing in the inside may be used. Examples of such an apparatus include an annealing apparatus, a physical vapor deposition (PVD) apparatus, and an etching apparatus. In particular, when the apparatus has a susceptor that is heated to about 1000 ° C. or higher, the effect of suppressing distortion of the apparatus according to the present invention is obtained particularly remarkably.

  Further, the susceptor guide 21 is not necessarily configured to be displaceable. Further, the ring portion 32 is not necessarily removable from the susceptor guide 21.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

  3 susceptor, 5 growth chamber (chamber), 7 heater, 9 gas introduction part, 11 gas discharge part, 17 rotating shaft, 19 joint, 20 motor, 21 susceptor guide, 22 mount, 23 susceptor holder, 29 rolling element, 31 ring Part (first ring part), 32, 32a, 32b ring part (second ring part), 32a1, 32b1 low density part (first part), 32a2, 32b2 high density part (second part), SD shoulder, SI1 inner peripheral surface (first inner peripheral surface), SI2 inner peripheral surface (second inner peripheral surface), SO1 outer peripheral surface (first outer peripheral surface), SO2 outer peripheral surface (second outer peripheral surface) ), 35 preliminary chamber, 40 drive unit, 41 movable cylinder, 100 CVD apparatus (vapor phase processing apparatus), FM thin film, HL hole part, PL projecting part, PM hook part, RP holding surface, SBa, SBb base (Processing deal product).

Claims (10)

A susceptor that holds the object to be processed;
A chamber provided with a hole surrounding the susceptor at an interval;
A gas introduction part for introducing a gas for performing a gas phase treatment on the object to be processed into the chamber;
A heater configured to heat the susceptor to one temperature;
A susceptor guide disposed outside the chamber, rotatably holding the susceptor and having a first outer peripheral surface;
A first ring portion attached to the chamber so as to surround the hole portion and having a first inner peripheral surface;
A second outer peripheral surface opposite to the first inner peripheral surface and a second inner peripheral surface opposite to the first outer peripheral surface, attached to the susceptor guide, and made of a porous metal body And a second ring portion.   The first inner peripheral surface of the first ring portion and the second outer peripheral surface of the second ring portion are in contact with each other when the temperature of the susceptor is the one temperature. Item 2. The gas phase processing apparatus according to Item 1.   The second outer peripheral surface of the second ring portion is configured to press the first inner peripheral surface of the first ring portion by thermal expansion when the temperature of the susceptor is the one temperature. The gas phase processing apparatus according to claim 2, wherein   The first inner peripheral surface of the first ring portion and the second outer peripheral surface of the second ring portion are in contact with each other when the susceptor is at room temperature. Gas phase processing equipment.   The first outer peripheral surface of the susceptor guide is configured to press the second inner peripheral surface of the second ring portion by thermal expansion when the temperature of the susceptor is the one temperature. The gas-phase processing apparatus of any one of Claims 1-4.   The gas-phase processing apparatus according to any one of claims 1 to 5, wherein a pore diameter of the metal porous body is 0.5 mm or more and 1 mm or less.   The said 2nd ring part contains the 1st part which has 1st density, and the 2nd part which has 2nd density higher than said 1st density, The any one of Claims 1-6 2. A gas phase processing apparatus according to item 1.   The gas phase processing apparatus according to claim 7, wherein the second portion of the second ring portion has a surface as the second outer peripheral surface of the second ring portion.   The vapor phase processing apparatus according to claim 7 or 8, wherein the second portion of the second ring portion has a portion that contacts the susceptor guide.   The vapor phase treatment apparatus according to any one of claims 1 to 9, wherein the metal porous body contains at least one of nickel, chromium, iron, copper, stainless steel, manganese, molybdenum, tungsten, titanium, and aluminum. .

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