JP5240782B2 - Continuous film deposition system - Google Patents

Description

  The present invention relates to a continuous film forming apparatus capable of continuously forming a film such as a functional thin film on a surface of a belt-shaped substrate such as a film or sheet by various film forming methods.

  A base material (film forming material) consisting of a long film or sheet made of plastic or inorganic material is continuously run in a vacuum chamber, and various functional thin films are formed on the surface by sputtering or vapor deposition. There is a continuous film forming apparatus for forming a film. This type of continuous film deposition equipment is used for maintenance such as replacement and maintenance of evaporation sources that supply coating materials for each batch process, replacement and cleaning of masks that define film formation areas, supply and replacement of substrates, and paper feeding. It is necessary to perform setup work.

  Japanese Patent Application Laid-Open No. 2008-31492 (Patent Document 1) proposes a continuous film forming apparatus that can easily perform such operations and requires less installation space. As shown in FIG. 11, this apparatus has a rectangular frame-shaped chamber body 2 in which a front wall 51 and a rear wall 52 are connected by an upper surface wall 53 and a lower surface wall 54 and open on both sides, and the chamber body 2. Is formed with a vacuum chamber 1 provided with side doors 3L and 3R that can be freely opened and closed by a hinge mechanism or a parallel movement mechanism, and a substrate S can be wound around and transported inside the vacuum chamber 1. A roll 4, an unwinding roll 5 that supplies the substrate S to the film forming roll 4, and a winding roll 6 that winds the substrate after film formation are provided. Sputter evaporation sources 7L and 7R for supplying and depositing film forming particles from the side on the base material wound around the film forming roll 4 are detachably attached to the side doors 3L and 3R.

  The unwinding roll 5 and the winding roll 6 each have a cylindrical bobbin detachably attached to a roll shaft, and a base coil in which an untreated base material is wound on the bobbin of the unwinding roll 5. The base material on which the film is formed is wound around the bobbin of the winding roll 6. In the vacuum chamber 1, the upstream side guide rolls 81 and 82 for supplying the substrate S unwound from the unwinding roll 5 to the film forming roll 4 and the film forming on the film forming roll 4 are formed. Downstream guide rolls 83 and 84 are provided for guiding the formed base material to the take-up roll 6.

  The film forming roll 4 and the guide rolls 81 to 84 are rotatably supported by a back wall and a front wall constituting the chamber body, and the unwinding roll 5 and the winding roll 6 are connected to the front wall 51. It is detachably and rotatably supported by a rotation drive unit provided on the back wall 52. The film forming roll 4 is rotationally driven by a motor and conveys the wound base material, and the unwinding roll 5 and the winding roll 6 are detected by load cells attached to predetermined guide rolls 82 and 83. The rotational torque is controlled so as to be a predetermined tension based on the substrate tension. The vacuum chamber 1 is provided with an evacuation device (not shown) such as a vacuum pump for evacuating the inside of the vacuum chamber 1 above the back wall 52, and a sputter for supplying a sputter gas such as an Ar gas so that the supply can be stopped. A gas supply unit (not shown) is provided.

  In order to form a sputter film on the surface of the substrate, the substrate S unwound from the unwinding roll 5 is wound around the film forming roll 4 via the upstream guide rolls 81 and 82, and further the downstream guide roll 83. , 84 so as to be wound on the winding roll 6. Then, after the vacuum chamber 1 is evacuated, a sputtering gas is supplied so as to have a predetermined gas pressure, and the film forming roll is fed while the substrate S is transported from the unwinding roll 5 to the winding roll 6. 4, film formation particles emitted from the left and right sputter evaporation sources 7 </ b> L and 7 </ b> R are deposited on the surface of the base material S to form a film, and the base material S after film formation is wound up by the take-up roll 6.

  According to the continuous film forming apparatus, after forming the base material, the left and right side doors 7L and 7R are largely opened from the chamber body 2 without removing the film forming roll 4 and the guide roll in the chamber body 2. The unwinding roll 5 and the winding roll 6 can be taken out, and bobbin replacement work and paper passing work can be easily performed. Further, not only maintenance inside the chamber but also replacement and maintenance of the sputter evaporation sources 7L and 7R can be easily performed in a small space. Such a continuous film forming apparatus configured such that the left and right side doors can be freely opened and closed is referred to as a continuous film forming apparatus of both sides open type.

  In the above-mentioned continuous film forming apparatus, a flat plate sword electrode provided with a flat plate target is used as a sputter evaporation source, but as a flat plate electrode provided with a target, JP-A-5-295536 ( As described in Patent Document 2), a central magnet and an outer peripheral magnet are provided so as to surround the central magnet along the length direction, and a magnetic field (race track-like magnetic field) spanning a mountain-shaped magnetic field line between both magnets is provided. An electrode with a built-in magnetic field generating mechanism can be used. Such an electrode is called a “magnetron electrode”, and a high frequency voltage, a direct current voltage or a pulsed voltage is applied to the electrode as a cathode to form a discharge plasma (magnetron discharge plasma) trapped by the magnetic field. it can. A sputter evaporation source having a sputtering target on a magnetron electrode is called a “magnetron sputter evaporation source”. Also, using a pair of magnetron sputter evaporation sources, connect the electrode of one evaporation source to one output end of the AC sputtering power source and the other evaporation source electrode to the other output end, The method of applying and sputtering is called “dual magnetron sputtering”. According to this method, the discharge when forming the insulating film by reactive sputtering can be stabilized for a long time.

  In addition, the electrode of the sputter evaporation source has a cylindrical appearance and has a built-in magnetic field generation mechanism that forms a racetrack-like magnetic field that captures the discharge plasma along the length (rotation axis) direction, and the outer peripheral wall is freely rotatable A rotating cylindrical electrode (referred to as “rotary magnetron electrode”) is described in Japanese Patent Publication No. 2002-52966 (Patent Document 3). A sputtering evaporation source having a cylindrical target on the outer periphery of the electrode is called a “rotary magnetron sputtering evaporation source”, and a high frequency voltage, a direct current voltage or a pulsed voltage is supplied to sputter the cylindrical target. Film formation with a high utilization rate can be performed. Further, dual magnetron sputtering can be performed by connecting an electrode of each evaporation source to a different output end of an AC sputtering power source using a pair of rotary magnetron sputtering evaporation sources and applying an AC voltage.

  On the other hand, as a film forming method, a plasma CVD method is known in addition to the above sputtering method, and a continuous film forming apparatus to which this plasma CVD method is applied is described in Japanese Patent No. 2587507 (Patent Document 4). This continuous film forming apparatus is provided with a pair of rotating cylindrical electrodes (sometimes referred to as “electrode rolls”) each provided with a transport roll in parallel, and a film wound around the opposing surface of the transport roll of each electrode While transporting the base material, discharge plasma is generated between the transport rolls of the rotating cylindrical electrode, and a raw material gas (reactive gas) is supplied thereto, which is wound around the transport roll by the dissociated raw material gas (active molecular species). The applied substrate surface is formed into a film. The discharge plasma is formed by connecting each electrode to a different output terminal of a plasma power source and applying an alternating voltage. In the case of the plasma CVD method, an insulating material such as a film is used as the base material.

  Another continuous film forming apparatus to which the plasma CVD method is applied is described in JP-T-2005-504880 (Patent Document 5). This continuous film forming apparatus is provided with a pair of rotating cylindrical electrodes having a built-in magnetic field generating mechanism for forming a magnetic field through which magnetic lines of force pass between the rolls, and a film base wound around the opposite surface of the transport roll of each electrode. Discharge plasma (Penning discharge plasma) trapped in the magnetic field between the electrode rolls by connecting both electrodes to one pole of the plasma power supply and applying an AC voltage of several tens to several hundreds kHz while conveying the material ), And using this, the source gas is dissociated to form a film.

  Another continuous film forming apparatus to which the plasma CVD method is applied is described in Japanese Patent Application Laid-Open No. 2008-196001 (Patent Document 6). This apparatus is provided with a pair of rotating cylindrical electrodes having a built-in magnetic field generating mechanism for forming a racetrack-like magnetic field in parallel, and each film substrate wound around the opposite surface of the transport roll of each electrode, Each electrode is connected to a different output end of the plasma power source, an alternating voltage of several tens to several hundreds kHz is applied to generate discharge plasma (magnetron discharge plasma), and this is used to dissociate the source gas and form a film Is.

JP 2008-31492 A JP-A-5-295536 Japanese National Patent Publication No. 2002-52966 Japanese Patent No. 2587507 JP-T-2005-504880 JP 2008-196001 A

  As shown in the paragraphs 0003 to 0007 above, the double-side open type continuous film forming apparatus is suitable as a relatively small apparatus because it is excellent in space efficiency and maintainability, and is used for small-scale experimental research and research and development. Suitable for. However, when used in such applications, there are limitations on the film deposition techniques that can be applied depending on the evaporation source attached in the vacuum chamber, and there is a lack of variations in film deposition techniques. For example, when sputtering is applied as physical vapor deposition, in the case illustrated in FIG. 11, a planar magnetron sputtering evaporation source can be used as an evaporation source provided on the side door, but a more efficient rotary magnetron sputtering evaporation source is used. There is a disadvantage that the plasma CVD method cannot be used for chemical vapor deposition.

  The present invention has been made in view of such a problem, and an object thereof is to provide a continuous film forming apparatus to which various film forming methods can be applied.

The continuous film forming apparatus of the present invention forms a film by supplying film forming particles to the surface of a substrate transported in a vacuum, and is supported in a vacuum chamber and rotatably in the vacuum chamber. A film forming roll capable of winding and transporting the base material, an unwinding roll for supplying the base material, a winding roll for winding the base material after film formation, and the film forming roll. And a pair of rotating cylindrical electrodes are arranged in parallel with the film-forming roll, and the vacuum chamber includes a front wall and a back wall, and a chamber body having a side opening. A side door for closing the side opening of the chamber body so that the side opening is openable and closable, the film forming source being attached to the side door, the film forming roll, the unwinding roll, the winding roll, and a pair of rotating cylindrical electrodes The front wall and back wall Those provided so as to be rotatably supported.

  According to this continuous film forming apparatus, the substrate wound around the film forming roll can be formed by the film forming source disposed opposite to the film forming roll, and further provided separately from the film forming source. Various types of sputtering, film formation by plasma CVD, and modification by plasma irradiation can be performed using the pair of rotating cylindrical electrodes.

Furthermore, according to this apparatus, by opening the side door, the film forming source, the unwinding roll and the winding roll can be easily replaced and maintained in a small space, and the inside of the vacuum chamber can be easily maintained. be able to.

  Further, in the continuous film forming apparatus, at least one of the pair of rotating cylindrical electrodes includes a cylindrical target, and the cylindrical shape is wound while a substrate is wound around the film forming roll. The target can be evaporated to form a film on the substrate surface. Thereby, not only the film forming source provided so as to face the film forming roll but also the substrate wound around the film forming roll is sputtered using the rotating cylindrical electrode provided with the cylindrical target as the sputter evaporation source. Can do.

  In the continuous film forming apparatus, each of the pair of rotating cylindrical electrodes includes a transporting roll for winding and transporting the substrate, and the transporting roll for the one rotating cylindrical electrode and the transporting roll for the other rotating cylindrical electrode. A path changing roll for guiding the base material on the opposite surface of the substrate, a plasma power source for forming discharge plasma between the base material wound around the transport roll of the rotating cylindrical electrode and the raw material for the discharge plasma Discharge formed between the conveying rolls of the rotating cylindrical electrode while providing a raw material gas supply device for supplying gas and winding the substrate around the opposite surface of the conveying roll of the rotating cylindrical electrode by the path changing roll Plasma treatment can be performed on the substrate surface by plasma. By adopting such a configuration, the transfer route of the substrate is changed by the route change roll, and while using the rotating cylindrical electrode as the substrate transfer means like the film forming roll, discharge plasma is generated between the transfer rolls, As a result, plasma treatment, that is, reforming by plasma irradiation and dissociation of the source gas can be performed to form a film by plasma CVD.

  In this case, a cylindrical target exchangeable with a transport roll provided in at least one of the pair of rotating cylindrical electrodes can be provided. Or the rotation cylindrical electrode provided with the cylindrical target exchangeable with at least one rotation cylindrical electrode of a pair of rotation cylindrical electrodes provided with the said conveyance roll can be provided. By adopting such a configuration, the substrate is wound by the discharge plasma formed between the conveying rolls of the rotating cylindrical electrode while the substrate is wound around the opposite surface of the conveying roll of the rotating cylindrical electrode and conveyed by the path changing roll. Plasma treatment is performed on the surface, and the transport roll provided in the at least one rotary cylindrical electrode is replaced with the cylindrical target, or at least one of the pair of rotary cylindrical electrodes provided with the transport roll is rotated. The cylindrical electrode is replaced with a rotating cylindrical electrode provided with the cylindrical target, and the cylindrical target is evaporated while the substrate is wound around and transported to the film forming roll to form a film on the surface of the substrate. it can. Thus, in addition to plasma processing such as film formation by plasma CVD, the transport roll is replaced with a cylindrical target as needed, or at least one of the rotating cylindrical electrodes provided with the transport roll is provided with a cylindrical target. By exchanging with the rotating cylindrical electrode, sputtering can be performed using the rotating cylindrical electrode as a rotary sputtering evaporation source, and various film forming methods and reforming methods can be properly used in one apparatus.

  In the case of an apparatus configuration capable of performing film formation by plasma CVD as described above, a partition wall that divides a facing space between the pair of rotating cylindrical electrodes is detachably provided, and the facing space partitioned by the partition wall It is possible to provide a vacuum exhaust device for exhausting the air. By providing the partition wall, the facing space where the discharge plasma is generated can be separated from other regions, and the facing space can be efficiently evacuated. In addition, the concentration control of the source gas supplied to the facing space becomes easy, and the productivity is improved.

  In addition, when the partition is provided, a shield gas supply device for supplying a shield gas for shielding the partition to an external space partitioned outside the partition in the vacuum chamber can be provided. Thereby, when performing film formation by plasma CVD using a rotating cylindrical electrode, it is possible to prevent the source gas used for plasma CVD from flowing into the external space of the partition wall, and the film formation roll and sputter evaporation in the external space can be prevented. It is possible to prevent the film from adhering to the source or the like.

  In the continuous film forming apparatus, a pair of rotating cylindrical electrodes can be provided with a magnetic field generation mechanism inside. By providing such a magnetic field generation mechanism, each rotating cylindrical electrode can be used as an electrode for forming magnetron discharge plasma or an electrode for forming Penning discharge plasma, and the film formation efficiency can be improved.

  According to the continuous film forming apparatus of the present invention, a pair of rotating cylindrical electrodes are provided below the film forming roll separately from the film forming source disposed opposite to the film forming roll. Separately or simultaneously, various sputtering, surface modification by plasma irradiation, and film formation by plasma CVD can be performed using a pair of rotating cylindrical electrodes. For this reason, various processes can be performed with one apparatus, and it can use suitably as an apparatus for experiment and research.

It is front notch sectional drawing of the continuous film-forming apparatus which concerns on 1st Embodiment. It is a cross-sectional explanatory view showing a sputtering state by magnetron discharge plasma using a rotary magnetron sputtering evaporation source in which a cylindrical target is attached to each of a pair of rotating cylindrical electrodes. It is sectional explanatory drawing which shows the sputter | spatter state by Penning discharge plasma using the rotary sputter | spatter evaporation source which attached the cylindrical target to a pair of rotating cylindrical electrodes, respectively. It is front notch sectional drawing of the continuous film-forming apparatus which concerns on 2nd Embodiment. It is sectional explanatory drawing which shows the film-forming state by Penning discharge plasma which used a pair of rotating cylindrical electrode as a base material conveyance means and discharge electrode. It is sectional explanatory drawing which shows the film-forming state by a magnetron discharge plasma which used a pair of rotation cylindrical electrode as a base material conveyance means and discharge electrode. It is front notch sectional drawing which shows the other usage type of the continuous film-forming apparatus of 2nd Embodiment. It is front notch sectional drawing which shows the other usage pattern of the continuous film-forming apparatus of 2nd Embodiment. It is sectional explanatory drawing of the rotating cylindrical electrode used as a rotary sputter | spatter evaporation source. It is a section explanatory view of a rotation cylindrical electrode provided with a conveyance roll used for plasma treatment. It is front notch sectional drawing of the conventional continuous film-forming apparatus.

  Hereinafter, a continuous film forming apparatus according to an embodiment of the present invention will be described with reference to the drawings. Note that members having the same functions as those of the conventional continuous film forming apparatus are denoted by the same reference numerals, description thereof is omitted or simplified, and differences will be mainly described.

  As shown in FIG. 1, the continuous film forming apparatus according to the first embodiment includes a pretreatment ion source 31 for irradiating the substrate S before film formation on the side door 3 </ b> L of the vacuum chamber 1. A guide roll 80 is provided on the upper part of the vacuum chamber 1 so as to convey the base material S so as to face this. Further, the lower surface wall 54 of the vacuum chamber 1 is provided with an exhaust port 33 that is normally closed by the opening / closing lid 32. By providing the exhaust port 33, in addition to the vacuum exhaust device provided in the upper part of the vacuum chamber 1, if necessary, another vacuum exhaust device is connected to the exhaust port 33 so that vacuum exhaust is performed from below. be able to.

  A pair of upper and lower sputter evaporation sources 71 and 72 are attached to the left side door 3L, and one sputter evaporation source 73 is detachably attached to the right side door 3R as a film formation source. These sputter evaporation sources are flat magnetron sputter evaporation sources. The pair of upper and lower sputter evaporation sources 71 and 72 on the left is connected to the output terminal of the sputtering power source, and an AC voltage is applied to each evaporation source electrode. Thereby, dual magnetron sputtering is performed. The sputter evaporation source 73 on the right side is used as a cathode electrode, and a high frequency voltage, a direct current voltage or a pulsed direct current voltage is applied to perform magnetron sputtering.

  A pair of rotating cylindrical electrodes 11, 12 are provided in parallel to the film forming roll 4 on the left and right at the lower part of the film forming roll 4 provided rotatably in the vacuum chamber 1. As shown in FIG. 9, the rotating cylindrical electrodes 11 and 12 are provided by a front side support member 25 having a drive shaft that is rotatably supported by a bearing provided on the front wall 51, and a bearing provided on the back wall 52. A back-side support member 26 having a driven shaft that is rotatably supported, and a cylindrical target 13 that is detachably concentrically held by these support members are provided. A rotary drive device 24 is detachably connected to the outer end portion of the drive shaft, and the rotary drive device 24 rotationally drives the cylindrical target 13 and supporting members 25 and 26 holding the cylindrical target integrally. The cylindrical target 13 includes a target body 21 and a backing tube 22 that backs up the target body 21. The target main body 21 may be detachably fixed to the backing tube 22 or may be integrated with these. The rotary drive mechanism may drive the pair of rotary cylindrical electrodes 11 and 12 in common, but may be provided for each electrode so that each rotary cylindrical electrode can be driven independently. The rotating cylindrical electrodes 11 and 12 may be provided with cooling channels through which a cooling medium such as cooling water flows, whereby the roll temperature can be controlled. The cooling medium may be supplied via the drive shaft of the front side support member 25.

  As described above, the rotating cylindrical electrodes 11 and 12 are provided with the cylindrical target 13 constituting the central outer peripheral wall thereof, and as shown in FIG. 2, a magnetic field generating mechanism for forming a racetrack magnetic field therein. 14 is provided. That is, these rotating cylindrical electrodes 11 and 12 are used as rotary magnetron electrodes. The pair of rotating cylindrical electrodes 11 and 12 are respectively connected to different output ends of the sputtering power source, and an alternating voltage of several tens kHz to several hundreds kHz is applied. Thereby, dual rotary magnetron sputtering is performed.

  As shown in FIG. 2, the magnetic field generation mechanism 14 has a linear central magnet along the direction of the central axis of the rotating cylindrical electrodes 11 and 12 and an outer peripheral magnet having different polarities so as to surround it. These are connected by a magnetic connecting member. The magnetic field generation mechanism 14 can be adjusted and held at a set position by a position adjustment holding mechanism (not shown) provided inside the roll. The magnetic field generating mechanism 14 forms a magnetic field line connecting the central magnet and the outer peripheral magnet through the target 13 in a mountain shape, and a racetrack magnetic field is formed along the axial direction of the cylindrical target 13. The discharge plasma P is trapped at the chevron portions of the magnetic lines of force, and a racetrack-shaped plasma ring is formed by the trapped discharge plasma (magnetron discharge plasma). As a result, when the cylindrical target 13 is rotated together with the outer peripheral walls of the rotating cylindrical electrodes 11 and 12 while the installation position of the magnetic field generating mechanism 14 is maintained, the outer peripheral surface is evenly consumed.

  The rotating cylindrical electrodes 11 and 12 are about 100 to 250 mmφ, preferably about 130 to 200 mm in consideration of the size of the magnetic field generating mechanism 14 housed inside and the size of the cylindrical target 13 that can be manufactured. Is good. The distance between the surface of the rotating cylindrical electrodes 11 and 12 or the cylindrical target 13 attached thereto and the surface of the film forming roll 4 is set to about 25 to 200 mm, preferably about 50 to 150 mm. .

  According to the continuous film forming apparatus of the first embodiment, sputtering is performed using a planar magnetron sputtering evaporation source provided on the side doors 3L and 3R or a rotary magnetron sputtering evaporation source using the rotating cylindrical electrodes 11 and 12 as electrodes. It can be performed. Moreover, the following various modifications can be applied and various sputtering can be provided.

  In the first embodiment, the magnetron sputtering evaporation source is provided on the side door. However, the film forming source provided on the side door may be a rotary magnetron sputtering evaporation source, or may be an arc evaporation source in addition to the sputtering evaporation source. . Further, a plasma CVD film forming mechanism such as an electrode for plasma generation or a raw material gas supply means can also be used.

  In the example shown in the figure, the atmosphere inside the vacuum chamber is a common atmosphere, but in order to improve the film formation quality, a partition partitioning the periphery of the sputter evaporation source using the left and right sputter evaporation sources as electrodes and the lower rotating cylindrical electrode as an electrode is provided. It may be provided and each region may be evacuated independently. In the illustrated example, an ion source is provided as a pretreatment device. However, the present invention is not limited to this, and an appropriate device can be provided, and a posttreatment device for post-processing a substrate after film formation and the characteristics of the substrate are measured. It is possible to appropriately mount a measuring device for the purpose.

  In the illustrated example, AC voltages having different polarities are applied to the rotating cylindrical electrode so as to perform dual magnetron sputtering. However, a DC voltage, a high-frequency voltage, and a pulsed voltage may be applied independently as the cathode electrodes. Thus, two rotary magnetron sputter evaporation sources can be used alone or simultaneously. Further, the magnetic field generation mechanism is not necessarily required and can be omitted. In the illustrated example, the rotating cylindrical electrode generates plasma on the side facing the film forming roll. However, a magnetic field is directed between the rotating cylindrical electrodes arranged opposite to each other, and plasma is generated at a position where the electrodes face each other. Alternatively, the film may be formed. Thus, film formation with little plasma irradiation on the substrate can be performed.

  In addition to dual magnetron sputtering, as shown in FIG. 3, the magnetic field lines that pass between the rolls so that the rotating cylindrical electrodes 11 and 12 pass through the surface of the cylindrical target 13 and preferably swell toward the film forming roll. A magnetic field generation mechanism 15 for generating a magnetic field is provided, both cylindrical rotating electrode rolls 11 and 12 are connected to a sputtering power supply 16 as cathode electrodes, and a DC voltage or an AC voltage is applied to capture the magnetic field between the electrode rolls. The generated Penning discharge plasma P can be generated, and sputtering can be performed. The magnetic field generating mechanism 15 is preferably provided with a position adjusting mechanism that adjusts and holds the setting position so that the bulge of the magnetic lines of force is variable. The shape of the magnetic lines of force may be a straight line that passes vertically between the centers of the electrode rolls.

  Next, a continuous film forming apparatus according to the second embodiment will be described with reference to the drawings. In the second embodiment, the base material S to be formed is preferably an electrically insulating plastic film or paper. This is because these insulating base materials do not conduct electricity, and therefore it is possible to prevent one rotating cylindrical electrode and the other rotating cylindrical electrode from being short-circuited through the base material. Note that members having the same functions as those of the conventional or the continuous film forming apparatus of the first embodiment are denoted by the same reference numerals, and description thereof will be omitted or simplified, and differences will be mainly described.

  As shown in FIG. 4, the continuous film forming apparatus according to the second embodiment uses a pair of rotating cylindrical electrodes 11 and 12 as substrate transport means and also as plasma generating electrodes. As shown in FIG. 10, the rotating cylindrical electrodes 11 and 12 are different from the rotating cylindrical electrode of FIG. 9 shown in the first embodiment in that a transport roll 23 is provided instead of the cylindrical target 13. In addition, the structural members other than the transport roll 23 and the cylindrical target 13, for example, the support members 25 and 26 on the front side and the back side can have a common structure in both embodiments. The width and inner diameter of the transport roll 23 may be formed to have substantially the same dimensions as those of the cylindrical target 13, and a magnetic field generating mechanism, a rotation driving device, a cooling unit, and the like provided therein can be shared.

  Moreover, in 2nd Embodiment, the path | route change rolls 91-96 for changing the conveyance path | route of the base material S from the film-forming roll 4 to the said rotation cylindrical electrode 11 and 12 are provided. The route change rolls 91 to 96 are detachably supported by a rotation support portion provided on the back wall 52 and the front wall 51. The base material S unwound from the unwinding roll 5 passes through the guide rolls 80, 81, 82 and the path changing rolls 91, 92, 93, and does not interfere with the film forming roll 4, and has a left rotating cylindrical shape. It is wound around the opposite surface side of the transport roll 23 of the electrode 11 and the transport roll 23 of the right rotating cylindrical electrode 12. Then, the right rotating cylindrical electrode 12 is wound around the surface facing the left rotating cylindrical electrode 11 via the path changing rolls 94 and 95, and the path changing roll 96 and the guide rolls 83 and 84 are attached. And is wound on a winding roll.

  In addition, a partition wall 35 that divides a region including the facing surfaces of the rotating cylindrical electrodes 11 and 12 is detachably provided on the chamber body 2. A gap is provided between the rotating cylindrical electrodes 11 and 12 and the partition wall 35 so that the base material S wound around the rotating cylindrical electrode transport roll passes therethrough. Similarly to the first embodiment, the lower surface wall 54 is provided with an exhaust port 33 so as to face the space between the transport rolls, and a vacuum exhaust device is connected to the exhaust port 33. Thereby, the space partitioned by the partition wall 35 can be easily evacuated from below.

  As shown in FIG. 5, the rotating cylindrical electrodes 11 and 12 are provided with a magnetic field generating mechanism 15 that generates magnetic lines of force that pass through the surface of the transport roll and pass between the transport rolls and attract each other. The cylindrical rotating electrode rolls 11 and 12 are both connected to one pole of the plasma power source 17 and an AC voltage of several tens to several hundreds kHz is applied, whereby a magnetic field region between the rotating cylindrical electrodes 11 and 12 is obtained. It is possible to form a discharge plasma P trapped in the above, that is, a Penning discharge plasma. In the space partitioned by the partition wall 35, a source gas supply unit 36 for supplying a source gas for plasma CVD is provided between the electrode rolls, and the source gas supply unit 36 is connected to a source gas supply unit (not shown). ing. The other electrode of the plasma power source 17 may be a wall surface of the chamber or may be provided as an independent electrode in the chamber.

  The interval between the conveying rolls of the rotating cylindrical electrodes 11 and 12 may be about 20 to 100 mm, preferably about 30 to 70 mm. Also in the first embodiment, the distance between the electrode center axes may be set in the same manner as in the second embodiment. Further, the distance from the film forming roll may be set to 25 to 200 mm, preferably 50 to 150 mm as in the first embodiment. By providing this distance, the partition wall 33 and the path are formed below the film forming roll 4. Space for providing the change rolls 92, 93, 94, 95 can be secured.

  When discharge plasma P is formed between the rotating cylindrical electrodes 11 and 12 and the rotating cylindrical electrodes 11 and 12 are energized and rotated without supplying the raw material gas, they are wound around the opposing surfaces of the rolls. Plasma treatment can be performed on the substrate. In addition, by supplying the source gas to the discharge plasma region, efficient film formation by plasma CVD (referred to as “plasma treatment” in combination with this film formation and the plasma irradiation treatment) can be performed.

  In the above example, the magnetic field generation mechanism 15 is provided so that the magnetic lines of force penetrating the space between the transport rolls 23 and 23 of the rotating cylindrical electrodes 11 and 12 are formed. As the magnetic field generation mechanism, FIG. As shown, a magnetic field generating mechanism 14 that forms a racetrack-like magnetic field may be provided. When such a magnetic field is formed, the cylindrical rotary electrodes 11 and 12 are connected to different output ends of the plasma power source 17 and applied with an alternating voltage of 10 to several hundred kHz, so that they are captured in the mountain region of the lines of magnetic force. In addition, a magnetron discharge plasma can be formed, and film formation by plasma CVD can be performed more efficiently. The magnetic field generation mechanism may be provided as necessary, and discharge plasma can be formed between the electrode rolls without providing the magnetic field generation mechanism.

  According to the continuous film forming apparatus of the second embodiment, the pair of rotating cylindrical electrodes 11 and 12 are used as discharge electrodes, the discharge plasma P is formed between the transport rolls 23 and 23, and the source gas is supplied thereto. Therefore, it can be used as a plasma CVD apparatus. Of course, as in the usage mode shown in FIG. 7, the side doors 3 </ b> L, 3 </ b> R of the side doors 3 </ b> L, 3 </ b> R are stopped with the rotary cylindrical electrodes 11, 12 resting with the path changing rolls 91-96 and the partition walls 35 attached or removed. Sputtering can be performed using sputter evaporation sources 71, 72, 73.

  Further, as shown in FIG. 8, the path changing rolls 91 and 96 at the upper part of the film forming roll 4 are removed and attached to the lower part of the film forming roll 4, and the base material S together with the film forming roll 4 is rotated with the rotating cylindrical electrodes 11 and 96. 12 is wound around the opposite surface side, and the plasma treatment by the discharge plasma P formed between the rotating cylindrical electrodes 11 and 12 can be performed simultaneously with the sputtering by the sputtering evaporation source of the side doors 3L and 3R. Of course, the path changing rolls 91 to 96 and the partition wall 35 are removed, a base material is wound only on the film forming roll 4, and a cylindrical roll prepared separately for the transport roll 23 of at least one of the rotating cylindrical electrodes 11 and 12. If it is used as an electrode of a sputter evaporation source by exchanging with the target 13, it can be used as the apparatus of the first embodiment. Of course, a rotating cylindrical electrode provided with a cylindrical target is prepared separately, and this rotating cylindrical electrode is replaced with at least one of the pair of rotating cylindrical electrodes provided with the transport roll. Good. Thus, according to this continuous film-forming apparatus, various film-forming methods can be implemented by rearranging the path changing roll as necessary. Furthermore, by sharing the basic structure (excluding the transport roll), the arrangement, the rotation drive device, and the like of the rotating cylindrical electrodes 11 and 12 with the first embodiment, the device can be shared.

  In the said embodiment, although the partition 35 was provided so that the space between the cylindrical rotating electrode rolls 11 and 12 might be divided, a partition is not necessarily required. In this case, the evacuation may be performed only by the evacuation device connected to the exhaust port 33 of the lower surface wall 54 of the vacuum chamber. Further, in the case of providing a partition wall, a shield gas supply device can be provided that supplies the shield gas that shields the partition wall 35 to the external space inside the vacuum chamber 1 and outside the partition wall 35 so as to be able to stop supply. Inflow of the source gas used for plasma CVD into the external space can be prevented, and adhesion of a film to a film forming roll, a sputter evaporation source, or the like in the external space can be prevented. As the shielding gas, an inert gas such as Ar or a plasma processing gas such as oxygen gas that does not form a film can be used.

1 vacuum chamber, 2 chamber body, 3L, 3R side door,
4 film forming rolls, 5 unwinding rolls, 6 winding rolls,
11, 12 rotating cylindrical electrode, 13 cylindrical target,
14, 15 Magnetic field generation mechanism, 23 transport roll, 35 partition,
71-73 Sputter evaporation source, 91-96 Path change roll

Claims (7)

A continuous film forming apparatus that forms a film by supplying film forming particles to the surface of a substrate conveyed in vacuum,
A vacuum chamber;
A film forming roll that is rotatably supported in the vacuum chamber and can wrap and transport the substrate.
An unwinding roll for supplying the substrate and a winding roll for winding the substrate after film formation;
A film forming source disposed facing the film forming roll;
Furthermore, a pair of rotating cylindrical electrodes are arranged in parallel with the film-forming rolls,
The vacuum chamber includes a front wall and a back wall, and includes a chamber body having a side opening and a side door that opens and closes the side opening of the chamber body, and the film forming source is attached to the side door. is the film-forming roll, unwinding roll, take-up rolls and a pair of rotating cylindrical electrodes are provided so as to be rotatably supported on said front wall and the rear wall, continuous film forming apparatus. At least one rotating cylindrical electrode of the pair of rotating cylindrical electrodes includes a cylindrical target, and the cylindrical target is evaporated while the substrate is wound around and transported on the film forming roll. The continuous film forming apparatus according to claim 1, wherein the film is formed. Each of the pair of rotating cylindrical electrodes includes a transporting roll for winding and transporting the substrate, and guides the base material to the opposing surface of the transporting roll of the one rotating cylindrical electrode and the transporting roll of the other rotating cylindrical electrode. A plasma power source that provides a path change roll, forms a discharge plasma between substrates conveyed around the transport roll of the rotating cylindrical electrode, and a source gas supply device that supplies a source gas to the discharge plasma Provided,
Plasma treatment is performed on the surface of the base material by the discharge plasma formed between the transport rolls of the rotating cylindrical electrode while the base material is wound around and transported on the opposite surface of the transport roll of the rotating cylindrical electrode by the path changing roll. The continuous film-forming apparatus according to claim 1 . Each of the pair of rotating cylindrical electrodes includes a transporting roll for winding and transporting the substrate, and guides the base material to the opposing surface of the transporting roll of the one rotating cylindrical electrode and the transporting roll of the other rotating cylindrical electrode. A plasma power source that provides a path change roll, forms a discharge plasma between substrates conveyed around the transport roll of the rotating cylindrical electrode, and a source gas supply device that supplies a source gas to the discharge plasma A cylindrical target exchangeable with a transport roll provided in at least one of the pair of rotating cylindrical electrodes,
Plasma treatment is performed on the surface of the substrate by the discharge plasma formed between the conveyance rolls of the rotating cylindrical electrode while the substrate is wound around and conveyed on the opposite surface of the conveyance roller of the rotating cylindrical electrode by the path changing roll, Alternatively, the transport roll provided in the at least one rotating cylindrical electrode is replaced with the cylindrical target, and the cylindrical target is evaporated while being transported by winding the base material around the film forming roll to form a film on the surface of the base material. The continuous film forming apparatus according to claim 1 . Each of the pair of rotating cylindrical electrodes includes a transporting roll for winding and transporting the substrate, and guides the base material to the opposing surface of the transporting roll of the one rotating cylindrical electrode and the transporting roll of the other rotating cylindrical electrode. A plasma power source that provides a path change roll, forms a discharge plasma between substrates conveyed around the transport roll of the rotating cylindrical electrode, and a source gas supply device that supplies a source gas to the discharge plasma A rotating cylindrical electrode provided with a cylindrical target, which is replaceable with at least one rotating cylindrical electrode of the pair of rotating cylindrical electrodes provided with the transport roll;
Plasma treatment is performed on the surface of the substrate by the discharge plasma formed between the conveyance rolls of the rotating cylindrical electrode while the substrate is wound around and conveyed on the opposite surface of the conveyance roller of the rotating cylindrical electrode by the path changing roll, Alternatively, at least one of the pair of rotating cylindrical electrodes provided with the transport roll is replaced with a rotating cylindrical electrode provided with the cylindrical target, and a substrate is wound around the film forming roll. The continuous film forming apparatus according to claim 1, wherein the cylindrical target is evaporated while being transported to form a film on the surface of the substrate. Provided partition walls separating the opposing space between the pair of rotating cylindrical electrode detachably, a vacuum exhaust device for exhausting the opposing spaces partitioned by the partition wall is provided, any one of claims 3 to 5 1 The continuous film forming apparatus described in the item. The continuous film-forming apparatus according to claim 6 , further comprising a shield gas supply device that supplies a shield gas for shielding the partition wall to an external space partitioned outside the partition wall in the vacuum chamber so as to be able to stop supply.

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