JP5247239B2 - Emission part structure of vacuum evaporation system - Google Patents

Description

  The present invention relates to a discharge part structure of a vacuum evaporation apparatus that diffuses and discharges a deposition material from a discharge hole to form a uniform film thickness on a deposition material such as a substrate.

For example, in Patent Document 1, a plurality of discharge holes each having a plurality of discharge holes drilled at regular intervals are provided at the front ends of a plurality of transfer pipes connected to an evaporation source so as to face the vapor deposition surface of the glass substrate. The invention is disclosed, thereby ensuring a wide emission distribution range as compared with conventional point evaporation sources, and arranging the glass substrate and the emission holes close to each other, so that the deposition efficiency (utilization efficiency, deposition) Rate, also called yield).
JP 2002-249868 A

  However, in paragraph [0031] of Patent Document 1, the improvement in the adhesion efficiency is indicated by numerical values, but the arrangement of the discharge holes and the heating of the branch pipe are only described for the improvement of the film thickness uniformity. Absent. In recent years, a vapor deposition apparatus that can form a more uniform film thickness on a large-area substrate has been desired.

  SUMMARY OF THE INVENTION An object of the present invention is to solve the above-described problems and to provide a discharge part structure of a vacuum evaporation apparatus capable of more uniformly depositing a vapor deposition material discharged from a discharge hole on a deposition target material.

According to the first aspect of the present invention, there is provided a vacuum deposition apparatus in which a dispersion container into which an evaporated deposition material is introduced has a discharge hole for discharging the deposition material toward a deposition target disposed opposite to the dispersion container. The discharge portion structure of the discharge hole is smaller than the diameter of the discharge hole inlet surface from the discharge hole entrance surface to the deposition material side on the axial center of the discharge hole , and the larger the diameter is away from the inlet surface. An inverted reflecting member having a conical reflecting surface is provided, and assuming that the hole diameter of the inlet surface of the discharge hole is D and the distance from the inlet surface of the discharge hole to the top of the reflecting member is h1, h1 ≧ (2/3) ) D.

According to a second aspect of the present invention, there is provided a vacuum deposition apparatus in which a dispersion vessel into which an evaporated deposition material is introduced has a discharge hole for discharging the deposition material toward a deposition target disposed opposite to the dispersion vessel. The discharge portion structure of the discharge hole is smaller in diameter than the diameter of the inlet surface of the discharge hole and closer to the inlet surface on the axis of the discharge hole from the inlet surface of the discharge hole to the counter-deposition material side of the dispersion container. A reflection member having an upright posture having a conical reflection surface is provided.

According to a third aspect of the present invention, in the configuration according to the first or second aspect , the discharge hole has a cylindrical shape or a funnel shape having a right cylindrical portion and an open tapered portion whose diameter is expanded from the upper edge of the right cylindrical portion. It is what.

According to the first aspect of the present invention, the vapor deposition material having a scattering path in the vicinity of the axial center portion of the discharge hole is provided by providing a conical and inverted reflection member on the deposition target side from the entrance surface of the discharge hole. The concentration of the vapor deposition material on the axial center of the emission hole is reflected to reduce the vapor deposition distribution on the material to be vaporized. Further, by setting the distance from the entrance surface of the discharge hole to the reflecting member to be not less than (2/3) times the hole diameter of the entrance surface of the discharge hole, it is possible to make the deposition distribution on the deposition target material more uniform. .

According to the second aspect of the present invention, the evaporation member having the scattering path in the vicinity of the axial center portion of the emission hole is provided by providing the conical and upright reflecting member on the side opposite to the evaporation target member from the entrance surface of the emission hole. The material is reflected to reduce the concentration of the vapor deposition material on the axial center of the discharge hole, thereby making the vapor deposition distribution on the vapor deposition material uniform.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
[Embodiment 1]
First, a vacuum deposition apparatus having an emission part according to the present invention will be described.

(First form of vacuum evaporation system)
This vacuum vapor deposition apparatus 10 deposits a single vapor deposition material. As shown in FIG. 6, an evaporation container 12 having a heating device (not shown) is disposed at the center lower part of the vacuum vapor deposition chamber 11. The crucible 13 for accommodating the vapor deposition material is disposed in the evaporation container 12. Then, a transfer duct 14 extending from the upper surface of the evaporation container 12 passes through the bottom wall and is introduced into the vacuum deposition chamber 11, and the center of the bottom surface of the hollow planar dispersion container 15 disposed at the bottom of the vacuum deposition chamber 11. It is connected to the. In addition, a substrate P, which is a material to be vapor-deposited held by a fixed holder (not shown), is disposed on the top of the vacuum vapor deposition chamber 11 so as to face the dispersion container 15. The dispersion container 15 has a square or rectangular hollow box shape having a predetermined thickness, and a discharge portion having a discharge hole 1 is provided at a predetermined position on the upper discharge surface facing the substrate P.

(Second form of vacuum evaporation system)
This vacuum deposition apparatus 20 is for depositing a single deposition material, and as shown in FIG. 7, an evaporation container 22 having a heating device (not shown) is arranged at the lower center of the vacuum deposition chamber 21. A crucible 23 for accommodating a vapor deposition material is disposed in the evaporation container 22. Then, a transfer duct 24 extending from the upper surface of the evaporation container 22 is introduced into the vacuum deposition chamber 21 through the bottom wall, and the hollow line-shaped dispersion container 25 disposed in the width direction at the bottom of the vacuum deposition chamber 21. It is connected to the bottom center. The dispersion container 25 has a hollow box shape having a predetermined thickness and long in the width direction, and discharge portions having discharge holes 1 are provided at predetermined intervals in the width direction on the upper discharge surface facing the substrate P. Furthermore, a movable holder (not shown) that holds the substrate P as a deposition material and moves it in the length direction is disposed at the top of the vacuum deposition chamber 21, and is disposed from the discharge hole 1 of the dispersion container 25. The released deposition material is deposited on the deposition surface below the substrate P moved by the movable holder.

(Third form of vacuum evaporation system)
The vacuum deposition apparatus 30 deposits three kinds of deposition materials on the deposition surface of the substrate P at a time, and has a heating device (not shown) at the lower center of the vacuum deposition chamber 31 as shown in FIG. Three evaporation containers 32A to 32C are arranged, respectively, and crucibles 33A to 33C each containing a vapor deposition material are arranged in the evaporation containers 32A to 32C. At the bottom of the vacuum vapor deposition chamber 31, there are provided an upper dispersion container 35A, an intermediate dispersion container 35B, and a lower dispersion container 35C having a hollow box shape in three upper and lower stages with a predetermined gap, and each evaporation container 32A. To 32C, the transfer ducts 34A to 34C extending from the upper surface of the gas are respectively introduced into the vacuum deposition chamber 31 through the bottom wall. The transfer duct 34C is directly connected to the vicinity of the center of the bottom surface of the upper dispersion vessel 35C, and the transfer duct 34B. Passes through the lower dispersion container 35B and is connected to the vicinity of the center of the bottom of the middle dispersion container 35B, and the transfer duct 34A passes through the lower dispersion container 35C and the middle dispersion container 35B, and is near the center of the bottom of the upper dispersion container 35A. It is connected to the.

  Each of the dispersion containers 35A to 35C has a square or rectangular box shape having a predetermined thickness, and a discharge portion having a discharge hole 1 is provided at a predetermined position on the discharge surface of the upper dispersion container 35A. Out of the plurality of discharge holes 1, the discharge hole 1 communicating with the upper dispersion container 35 </ b> A is directly opened on the upper surface plate to discharge the vapor deposition material in the upper dispersion container 35 </ b> A. Further, it is connected to the discharge hole 1 communicated with the middle stage dispersion container 35B from the upper surface plate of the middle stage dispersion container 35B through the middle stage connection nozzle 36B penetrating the upper stage dispersion container 35A and discharges the vapor deposition material in the middle stage dispersion container 35B. . Further, the discharge hole 1 communicating with the lower dispersion container 35C is connected from the upper surface plate of the lower dispersion container 35C via the lower dispersion nozzle 35C penetrating the middle dispersion container 34B and the upper dispersion container 35A, and vapor deposition in the lower dispersion container 35C. Release material.

  A substrate P, which is a material to be vapor-deposited held by a fixed holder 37, is disposed on the top of the vacuum vapor deposition chamber 31, and the vapor deposition material discharged from each discharge hole 1 of the upper dispersion vessel 35A is applied to the substrate P. Vapor deposited.

(4th form of a vacuum evaporation system)
The vacuum deposition apparatus 40 of the fourth embodiment is such that the transfer ducts 34A to 34C in the third embodiment are respectively connected to the side end portions of the upper, middle, and lower dispersion containers 35A to 35C, and will be described with reference to FIG. . Since the other members are configured identically, the same members as those in the third embodiment are denoted by the same reference numerals, and description thereof is omitted.

  The vapor deposition material discharged from the outlets of the transfer ducts 34A to 34C is guided into the central portions of the dispersion containers 35A to 35C in the dispersion containers 35A to 35C, to which the transfer ducts 34A to 34C are respectively connected to the side ends. Inner manifolds 41A to 41C are provided. Each of the inner manifolds 41A to 41C is formed by a duct arranged at the bottom of the dispersion containers 35A to 35C from the connection portion of the transfer ducts 34A to 34C to the center of each of the dispersion containers 35A to 35C. Exits 41a to 41c are opened in the part. Accordingly, the vapor deposition material can be uniformly dispersed in each of the dispersion containers 35 </ b> A to 35 </ b> C, and the vapor deposition material can be uniformly discharged from each discharge hole 1.

(First embodiment of discharge section)
Next, a first embodiment of the discharge portion provided in the vacuum deposition apparatus 10, 20, 30, 40 according to the present invention will be described with reference to FIGS.

As shown in FIG. 1A, the discharge portions provided in the dispersion containers 15, 25, and 35 </ b> A include a discharge hole 1 formed in the upper surface plate 52 and an inverted posture arranged on the axis of the discharge hole 1. And the reflecting member 51. The discharge port 1 is formed in a cylindrical shape having a distance H (the thickness of the upper surface plate 52 in the figure). The top of the reflecting member 51 is disposed at a distance h1 from the entrance surface 1a, which is a reference surface.

Of course, as shown in FIG. 1B, the discharge hole 1 may be formed in a columnar shape with a distance H by a cylindrical member 62a erected on the upper plate 62 having a thin plate thickness.
The reflecting member 51 has an inverted bottomless conical shape with the lower end at the top, and the outer peripheral surface of the conical pyramid is configured as a reflecting surface, and the apex angle β is 90 ° in the figure. The apex angle β is preferably in the range of 75 ° to 105 °, and the range of β = 60 ° to 120 ° is also effective. Although not shown, the reflecting member 51 is attached by a support plate that is erected on the upper surface plate 52 and is arranged in the radial direction from the axis of the discharge hole 1, for example.

Next, FIG. 2 shows a graph in which the dispersion effect by the reflecting member 51 is obtained by simulation. Here, the hole diameter D of the discharge hole 1 is set to 9 mm, the distance H is set to 6 mm, and the reflection member 51 is arranged at h1 = H = 6 mm so that the top portion is in contact with the exit surface of the discharge hole 1 and the bottom outer diameter thereof. In case 1, W1 = (1/9) D = 1 mm, in case 2, W1 = (5/9) D = 5 mm, and in case 3, W1 = D = 9 mm. Finding the number of deposits. Here, in the graph of (a), the vertical axis is calculated by setting the maximum value of the film thickness distribution to 1, and in both the graphs of (a) and (b), the horizontal axis is from the axis of the discharge hole 1. The ratio (x / L) between the radius x of the gas and the distance L from the discharge hole 1 to the substrate P is shown.

As shown in the basic case without the reflecting member 51, the dilute flow of the vapor deposition material emitted from the emission hole 1 shows a distribution according to cos ⁿ θ (cosine law) with the axis of the emission hole 1 as the center. In the vicinity of the axis, the deposition material is released most, and the distribution decreases with increasing distance from the axis. However, in the present invention, the reflective member 51 is disposed on the axial center, and the vapor deposition material scattered along the scattering path in the vicinity of the axial center is reflected to improve the uniformity of the vapor deposition distribution.

That is, according to FIG. 2, the case 3 in which the hole diameter D of the discharge hole 1 is equal to the bottom outer diameter W1 of the reflecting member 51 has the best uniformity, and the distribution concentration is greatly reduced. Even in the case 1, the uniformity is slightly improved compared to the basic case, but the uniformity is slightly improved. However, in the case 2, the distribution concentration is more effectively reduced. Recognize. As described above, the effect of the reflection member 51 is confirmed in a state where the top portion of the reflection member 51 is disposed so as to contact the exit surface (h = D) of the discharge hole 1, and the bottom outer diameter of the reflection member 51 is from W1 = (1/9) D, the greater the W1 = (1/5) D, W1 = D, it was confirmed that it is possible to reduce the distribution degree of concentration.

FIG. 3 shows a graph in which the effect of the reflecting member 51 is obtained by simulation under other conditions. The reflecting member 51 has a base outer diameter W1 = (5/9) D = 5 mm, and the arrangement position h1 is h1 = (1/3) D = 3 mm in case 4 and h1 = (2/3) in case 5. In order to satisfy D = 6 mm and h1 = D = 9 mm of the case 6, the thickness is varied on the axis of the discharge hole 1 to obtain the film thickness distribution and the number of deposited deposition materials. Here, the horizontal and vertical axes in FIGS. 3A and 3B are represented in the same manner as in FIG.

According to FIG. 3, it was found that the case 4 and the case 6 have a uniform uniformity around the case 5, and a uniformity superior to that of the basic case can be obtained. Further, when comparing the case 4 and the case 6, the case 6 is slightly better, and it is estimated that the uniformity peak is in the vicinity of h1 = 7 mm. Thereby, the effectiveness of the reflecting member 51 was confirmed. From the above graph, the reflecting member 51 that can ensure practical uniformity is the distance from the entrance surface 1a to the reflecting member 51: h1 is not less than (2/3) times the hole diameter D of the discharge hole 1 [h1 ≧ (2/3) D] was found to be desirable. Furthermore, it has been found that the reflection member 51 may be disposed in the vicinity of the upper portion from the exit surface.

  According to the above-described embodiment, by disposing the reflecting member 51 having the outer peripheral portion of the cone side as the reflecting surface on the axis side of the discharge hole 1 from the entrance surface 1a to the substrate P side in an inverted posture, The vapor deposition material having the scattering path in the vicinity of the axial center portion is reflected to reduce the concentration of the vapor deposition material on the axial center portion, thereby making the vapor deposition distribution on the substrate P uniform.

Further, by setting the distance h1 from the entrance surface 1a of the discharge hole 1 to the reflecting member 51 to be not less than (2/3) times the hole diameter D of the entrance surface 1a of the discharge hole 1, the deposition distribution on the substrate P can be further increased. It can be made uniform.

Incidentally, FIG. 1 (c) (d) is shows the modified example of forming the opening taper portion 52c, 62c to release holes 1. The release holes 1 is a straight cylindrical portion 52b of the distance h2 from the entrance face 1a, 62b and a straight cylindrical portion 52b, the distance h3 to be expanded as the exit surface 1b with an opening angle α from the upper edge of 62b funnel-shaped The open taper portions 52c and 62c are formed. In these modified examples, it is confirmed that the same effect can be obtained by the reflecting member 51 without changing the tendency to improve the uniformity of the vapor deposition distribution on the substrate P as compared with the first embodiment. . Here, the inclination angle α with respect to the axial center of the open taper portions 52c and 62c is shown as 60 ° in the figure, for example, but 45 ° ≦ α ≦ 75 ° is a preferable value.

(Second embodiment of discharge section)
Next, a second embodiment of the discharge portion according to the present invention provided in the vacuum evaporation apparatuses 10 and 20 will be described with reference to FIGS. Note that the same members as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted.

  As shown in FIG. 4A, the discharge holes 1 formed in the dispersion containers 15 and 25 are formed in a columnar shape having a distance H (here, the thickness of the upper surface plate 52). On the axis, a reflecting member 61 in an upright posture is provided, the apex of which is located at a distance h4 downward (on the opposite side of the substrate P) from a position that coincides with the entrance surface 1a that is the reference surface. Of course, as shown in FIG. 4B, the discharge hole 1 may be formed by a cylindrical member 62a erected on the upper plate 62 having a thin plate thickness.

  The reflecting member 61 is a bottomless conical shape in an upright posture with the upper end at the top, and the outer peripheral surface of the cone-shaped cone side is formed as a reflecting surface, and the apex angle β is 90 ° in the figure. However, the apex angle β is preferably in the range of 75 ° to 105 °, and β = 60 ° to 120 ° is also effective. Although not shown, the reflecting member 61 is attached by a support plate that is suspended from the upper surface plate 52 and arranged in a radial direction centered on the axis of the discharge hole 1.

Here, the graph which calculated | required the dispersion | distribution effect by this reflective member 61 by simulation in FIG. 5 is shown. Here, for comparison, a disc-shaped reflecting plate and a conical reflecting member 61 were used. The disc case 1 using a disc-shaped reflector has an outer diameter of 1 mm and a distance h4 = − (1/3) D from the entrance surface 1a serving as a reference for the discharge holes 1, 1A to 1C. = −3 mm (“−” indicates the side opposite to the substrate P, D is the hole diameter of the inlet surface of the discharge hole 1 ). Further, in the same disk case 2, the outer diameter of the reflecting plate was set to 1 mm, and the distance h4 = − (1/9) D = −1 mm from the entrance surface 1a. Furthermore, in the same disc case 3, the outer diameter of the reflecting plate was set to (1/3) D = 3 mm, and the distance h4 from the entrance surface 1a was set to −3 mm. Further, the conical case using the reflecting member 61 is formed in the same manner as in the first embodiment with the base outer diameter W1 = 5 mm, and is located at a distance h4 = − (1/3) D = −3 mm from the entrance surface 1a. Arranged. Here, the hole diameter D of the discharge hole 1 is 9 mm, and the distance H is 6 mm. Here, the horizontal and vertical axes in FIGS. 3A and 3B are represented in the same manner as in FIG.

  According to FIG. 5, in the case of the disk cases 1 to 3 using the disk-shaped reflector, even if the distance h4 from the entrance surface 1a is changed, it is almost the same as the basic case, and the film thickness distribution is not much. no change. However, in the case of the conical case, although it does not reach the uniformity of the bottom outer diameter W1 = 5 mm and h1 = 6 mm shown in the first form of the discharge portion, the uniformity can be improved as compared with the basic case. It was.

  According to the above embodiment, the vapor deposition material having the scattering path in the vicinity of the axial center portion of the discharge hole 1 is provided by providing the conical reflection member 61 in an upright posture on the inner side from the entrance surface 1 a of the discharge hole 1. The concentration of the vapor deposition material on the axial center is reduced by reflection, so that the vapor deposition distribution on the substrate P can be made uniform.

Further, by setting the outer diameter W1 of the bottom side of the reflecting member 61 to be equal to or greater than (1/9) times the hole diameter D of the entrance surface 1a of the discharge hole 1, the deposition distribution on the substrate P can be made more uniform.
4 (c) and 4 (d) show a modification in which the discharge hole 1 is formed in the discharge hole 1 with open taper portions 52c and 62c, and the right circular cylinder portions 52b and 62b at a distance h2 from the inlet surface 1a, and the right circular cylinder. Funnel-shaped open taper portions 52c and 62c having a distance h3 whose diameter is increased from the upper edge portions of the portions 52b and 62b by the open angle α toward the exit surface 1b are formed. In these modified examples, it is confirmed that the same effect can be obtained by the reflecting member 61 without changing the tendency of improving the uniformity of the vapor deposition distribution on the substrate P as compared with the second embodiment . . Here, the inclination angle α with respect to the axial center of the open taper portions 52c and 62c is shown as 60 ° in the figure, for example, but 45 ° ≦ α ≦ 75 ° is a preferable value.

The 1st Embodiment of the discharge | release part of the vacuum evaporation system which concerns on this invention is shown, (a) is a longitudinal cross-sectional view which shows 1st Embodiment, (b) is a modification of 1st Embodiment. FIG. 4C is a longitudinal sectional view showing a modification of the first embodiment, and FIG. 4D is a longitudinal sectional view showing a modification of the modification. The film thickness distribution by the change of the base outer diameter of the reflective member in 1st Embodiment is shown, (a) is a film thickness distribution on a vertical axis | shaft, the radius from the axis of an emission hole and the emission hole to a board | substrate on a horizontal axis. (B) is a graph showing the ratio between the number of deposition materials deposited on the vertical axis, the diameter from the axis of the discharge hole, and the distance from the discharge hole to the substrate. It is. The film thickness distribution by the change of the arrangement position of the reflecting member in 1st Embodiment is shown, (a) is the film thickness distribution on a vertical axis | shaft, the radius from the axis of a discharge hole on a horizontal axis, and from a discharge hole to a board | substrate. (B) is a graph showing the ratio between the number of deposition materials deposited on the vertical axis and the radius from the axis of the discharge hole to the distance from the discharge hole to the substrate. is there. The 2nd Embodiment of the discharge | release part of the vacuum evaporation system which concerns on this invention is shown, (a) is a longitudinal cross-sectional view which shows 2nd form, (b) is a longitudinal cross-section which shows the modification of 2nd Embodiment. FIG. 4C is a longitudinal sectional view showing another modification of the second embodiment, and FIG. 4D is a longitudinal sectional view showing a modification of the other modification. In 2nd Embodiment, thickness distribution when a flat plate and a cone-shaped reflecting member are arrange | positioned is shown, (a) is a film thickness distribution on a vertical axis | shaft, and the radius and discharge | release from the axial center of an emission hole are shown on a horizontal axis. (B) is a graph showing the ratio of the distance from the hole to the substrate, and (b) shows the ratio of the number of deposition materials deposited on the vertical axis and the radius from the axis of the discharge hole to the distance from the discharge hole to the substrate on the horizontal axis. It is the shown graph. It is a schematic perspective view which shows the 1st form of the vacuum evaporation system which has the discharge | release part which concerns on this invention. It is a schematic perspective view which shows the 2nd form of the vacuum evaporation system which has the discharge | release part which concerns on this invention. It is a side view which shows the 3rd form of the vacuum evaporation system which has a discharge | release part based on this invention. The 4th form of the vacuum evaporation system which has the discharge | release part which concerns on this invention is shown, (a) is a side view, (b) is a longitudinal cross-sectional view of a dispersion container.

DESCRIPTION OF SYMBOLS 1 Release hole P Board | substrate 10,20,30,40 Vacuum evaporation apparatus 11,21,31 Vacuum evaporation chamber 12,22,32A-32C Evaporation container 13,23,33A-33C Crucible 14,24,34A-34C Transfer duct 15 , 25, 35A to 35C Dispersion vessel 36B Middle connection nozzle 36C Lower connection nozzle 51, 61 Reflective member 52, 62 Upper surface plate
62a cylindrical member 52b , 62b straight cylindrical part 52c , 62c open taper part

Claims (3)

A discharge container structure of a vacuum evaporation apparatus in which a discharge hole for discharging a vapor deposition material is formed in a dispersion container into which evaporated vapor deposition material is introduced, and the vapor deposition material is discharged toward a material to be deposited facing the dispersion container,
A conical reflecting surface having a diameter smaller than the diameter of the entrance surface of the discharge hole and a larger diameter away from the entrance surface on the deposition target side from the entrance surface of the discharge hole on the axis of the discharge hole. Provide a reflective member in an inverted position,
When the hole diameter at the entrance surface of the discharge hole is D, and the distance from the entrance surface of the discharge hole to the top of the reflecting member is h1,
The discharge part structure of the vacuum evaporation apparatus characterized by satisfying h1 ≧ (2/3) D. A discharge container structure of a vacuum evaporation apparatus in which a discharge hole for discharging a vapor deposition material is formed in a dispersion container into which evaporated vapor deposition material is introduced, and the vapor deposition material is discharged toward a material to be deposited facing the dispersion container,
An upright having a conical reflecting surface that is smaller in diameter than the diameter of the inlet surface of the discharge hole and closer to the inlet surface on the side opposite to the material to be deposited from the inlet surface of the discharge hole on the axis of the discharge hole An emission part structure of a vacuum vapor deposition apparatus, characterized in that a reflective member having a posture is provided. 3. The vacuum evaporation apparatus according to claim 1 , wherein the discharge hole has a columnar shape or a funnel shape including a straight columnar portion and an open taper portion whose diameter is expanded from an upper edge of the right columnar portion . Emission part structure.

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