JP5250874B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device that alleviates damage to a semiconductor element during bonding in flip chip bonding technology.

  In recent years, electronic devices have been remarkably reduced in size and functionality, and as a bonding technology advantageous for high density, semiconductor elements are faced down and connected to a wiring board through bumps to reduce size and size. Flip chip bonding technology that can be realized is applied to semiconductor mounting.

There are the following examples as conventional techniques related to the flip chip bonding technique.
This is because when the bumps connecting the semiconductor element and the wiring board are not arranged on the outer periphery of the semiconductor element but are concentrated near the center of the semiconductor element, the semiconductor element is inclined at the time of bonding. Certain bumps are deformed more than necessary, and reliability is impaired.

  As a technique for preventing such a defect due to the inclination of the semiconductor element, Patent Document 1 discloses that at least three dummy bumps serving as a support are provided on the outer periphery of the semiconductor element, the semiconductor element and the wiring board are kept parallel, and the deformation of the bump is performed. A method of making the amount uniform is introduced. According to this method, even if the semiconductor element is tilted, the installed dummy bumps serve as a spacer, and the semiconductor element is not tilted. Further, by preventing excessive deformation of the bump, damage to the semiconductor element can be reduced.

JP-A-9-115910

  However, the prior art as described above is based on the premise that the bump is disposed near the center of the semiconductor element and the dummy bump is disposed on the outer peripheral portion of the semiconductor element. Therefore, in the case of a structure in which dissimilar parts are mounted on the semiconductor element, the part covers the outer periphery of the semiconductor element, or the area where the part is mounted protrudes from the wiring board. When mounted or bumps are arranged on the outer periphery, dummy bumps cannot be provided on the outer periphery of the semiconductor element, and damage to the semiconductor element due to tilt cannot be mitigated.

  Specifically, the bonding tool at the time of bonding holds the center of the semiconductor element, but if the center position of the component mounted on the semiconductor element and the center position of the semiconductor element are shifted as described above, the weight The balance becomes worse and the semiconductor element is tilted at the time of bonding. Furthermore, if an ultrasonic bonding method is applied as the bonding method in that state, vibration may occur in a direction perpendicular to the wiring board when ultrasonic vibration is applied.

  When such vibration occurs, deterioration of the weight balance is promoted, and the semiconductor element is further inclined and joined to the side on which the component is mounted. Also, bumps arranged in an inclined direction receive a load and deform more than necessary, causing damage to the semiconductor element.

To arrange such dummy bumps on the outer periphery as in the prior art, it is necessary to increase the size of the semiconductor element and the wiring board, and it is difficult to cope with this phenomenon.
The present invention has been made in view of such a problem, and even when a semiconductor element has a component mounted thereon, when the semiconductor element is flip-chip bonded to a wiring board, the damage acting on the semiconductor element is reduced. An object of the present invention is to provide a semiconductor device having a structure.

  In the semiconductor device according to the first aspect of the present invention, the first electrode formed on the semiconductor element and the second electrode provided on the wiring board on which the mounting is performed face each other, and the first electrode and the second electrode A semiconductor device in which an electrode is bonded via a bump, wherein the semiconductor element is mounted on the same surface as the surface on which the first electrode is disposed and separated from the first electrode And a dummy electrode mounted between the first electrode and the component on the same surface as the surface on which the first electrode is disposed, and the semiconductor element is flip-chip bonded to the wiring board. A support that corrects the inclination of the semiconductor element with respect to the wiring board during the operation is interposed between the dummy electrode and the wiring board.

  In the semiconductor device according to claim 2 of the present invention, the first electrode formed on the semiconductor element and the second electrode provided on the wiring board to be mounted are opposed to each other, and the first electrode and the second electrode A semiconductor device in which an electrode is bonded via a bump, wherein the semiconductor element is mounted on the same surface as the surface on which the first electrode is disposed and separated from the first electrode And a dummy electrode mounted between the first electrode and the component on the same surface as the surface on which the first electrode is disposed, and provided on the dummy electrode and the wiring board. A support is interposed between the formed second electrode.

  A semiconductor device according to a third aspect of the present invention is the semiconductor device according to the second aspect, wherein the support is a line segment connecting the center of the component and the center of the region where the bump is disposed on the semiconductor element. The component is arranged in a region that is offset from the center of the semiconductor element.

  A semiconductor device according to a fourth aspect of the present invention is the semiconductor device according to the third aspect, wherein the planar shape of the semiconductor element is a quadrilateral, and the components are arranged so as to be offset from the center of the semiconductor element in both the vertical and horizontal directions. And arranged close to one corner of the semiconductor element.

  According to a fifth aspect of the present invention, in the semiconductor device according to the second aspect, the support member is disposed between a bump closest to the component among the plurality of bumps and the component. To do.

  A semiconductor device according to a sixth aspect of the present invention is the semiconductor device according to the second aspect, wherein the support member is disposed between a bump closest to the component among the plurality of bumps and the component. When the distance between the support and the support is L1, and the distance between the bump closest to the component and the support is L2, L1 = L2.

  A semiconductor device according to a seventh aspect of the present invention is the semiconductor device according to the second aspect, wherein the support member is disposed between a bump closest to the component among the plurality of bumps and the component. It is arranged on a line segment connecting the center and the center of the bump closest to the component.

The semiconductor device according to an eighth aspect of the present invention is the semiconductor device according to the first or second aspect, wherein the diameter of the support is larger than the diameter of the bump.
According to a ninth aspect of the present invention, in the semiconductor device according to the first or second aspect, the support is a stud bump or a plating bump.

A semiconductor device according to a tenth aspect of the present invention is the semiconductor device according to the first aspect, wherein the support is a convex portion formed by a step of the second electrode on the wiring board.
A semiconductor device according to an eleventh aspect of the present invention is the semiconductor device according to the first or second aspect, wherein the bump is a stud bump or a plated bump.

  According to this configuration, the support that corrects the inclination of the semiconductor element with respect to the wiring board when the semiconductor element is flip-chip bonded to the wiring board is interposed between the dummy electrode and the wiring board. When the semiconductor element is tilted when the semiconductor element is flip-chip bonded to the wiring board, the support contacts the wiring board side earlier than the bump during bonding, and an excessive load is applied to the bump. It is possible to suppress the application and damage to the semiconductor element can be reduced.

The enlarged plan view of the semiconductor element which shows the semiconductor device in Embodiment 1 of this invention, and the enlarged side view of a semiconductor device The enlarged plan view of the semiconductor element which shows the semiconductor device of the comparative example 1, and the enlarged side view of a semiconductor device An enlarged plan view of the semiconductor element showing the semiconductor device of Comparative Example 2, an enlarged side view of the semiconductor device, and an enlarged plan view of the semiconductor element showing the semiconductor device in the second embodiment of the present invention The enlarged plan view of the semiconductor element which shows the semiconductor device of the comparative example 3, and the enlarged plan view of the semiconductor element which shows the semiconductor device in Embodiment 3 of this invention The enlarged plan view of the semiconductor element which shows the semiconductor device of the comparative example 4, and the enlarged plan view of the semiconductor element which shows the semiconductor device in Embodiment 4 of this invention The enlarged plan view of the semiconductor element which shows the semiconductor device of the comparative example 5, and the enlarged plan view of the semiconductor element which shows the semiconductor device in Embodiment 5 of this invention

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
(Embodiment 1)
FIG. 1 shows a semiconductor device according to the first embodiment of the present invention, and FIG.

First, the comparative example 1 of FIG. 2 is demonstrated.
FIG. 2A is a plan view of the semiconductor element before bonding, and FIG. 2B is a side view showing a state in which the bump 3 of the semiconductor element is in contact with the electrode 2 as the first electrode of the wiring board 7.

  As shown in FIG. 2A, a plurality of electrodes 2, bumps 3 provided on the electrodes 2, and a component 4 are provided on the semiconductor element 1. The component 4 is mounted so as to be shifted in one direction (right side in FIG. 2A) from the center P1 of the semiconductor element 1, and is disposed so as to partially cover the outer peripheral portion of the semiconductor element 1.

  The plurality of bumps 3 are formed by stud bumps or plating bumps by a ball bonding method, and are symmetrically positioned in the region where the component 4 is mounted with respect to the center P1 of the semiconductor element 1 (left side in FIG. 2A). In the same manner as the component 4, the outer peripheral portion of the semiconductor element 1 is partially covered. On the wiring board 7, electrodes 8 as second electrodes are formed corresponding to the bumps 3.

  In order to connect the semiconductor element 1 face-down to the electrodes 8 of the wiring board 7 in a lump, the center P1 of the semiconductor element 1 is sucked and held by a suction nozzle (not shown), and is flip-chip using, for example, ultrasonic vibration. At the time of bonding, since the bump 3 is provided so as to be offset from one side of the semiconductor element 1, the bump 3 is brought into contact with the electrode 8 of the wiring board 7 as shown in FIG. The semiconductor element 1 that is held and pressed against the wiring board 7 is provided with the component 4 of the semiconductor element 1 as indicated by the phantom line J2 in FIG. 2B, with the broken line J1 passing through the center P1 as a boundary. The semiconductor element 1 is tilted by the moment force that rotates the semiconductor element 1 downward.

  Therefore, in this comparative example 1, when ultrasonic vibration is generated, deterioration of the weight balance is promoted, and the semiconductor element 1 is further inclined and joined to the side on which the component 4 is mounted. Further, the bumps 3 arranged in an inclined direction (= close to the center P1) among the plurality of bumps 3 are subjected to a load and are deformed more than necessary, thereby damaging the semiconductor element 1.

  In contrast to the comparative example 1, in the semiconductor device of the first embodiment, as shown in FIG. 1A, the semiconductor element 1 includes the electrode 2 and the component 4 on the same surface as the surface on which the electrode 2 is disposed. A dummy electrode 5 is provided between them, and a support 6 is provided on the dummy electrode 5. In this embodiment, the dummy electrode 5 and the support 6 are provided on a line segment J5 connecting the center P2 of the component 4 and the center P3 of the region where the bump 3 is disposed on the semiconductor element 1. . More specifically, the dummy electrode 5 and the support 6 are disposed on the center P1. Others are the same as Comparative Example 1.

  There is no problem even if the bumps 3 and the support 6 are formed differently, but it is preferable to use the same formation method because the process can be simplified. Further, the support 6 has a diameter larger than that of the bump 3.

  With this configuration, when the semiconductor element 1 is face-downed and connected to the electrodes 8 of the wiring substrate 7 at once, the center P1 of the semiconductor element 1 is held and, for example, flip chip bonding is performed using ultrasonic vibration. Since it can be specified that the direction in which the semiconductor element 1 is inclined is the side on which the component 4 is mounted, if the support body 6 is arranged at the position as described above, the support body 6 is ahead of the bump 3. Will come into contact with the electrode 8. Since the diameter of the support 6 is larger than the diameter of the bump 3, excessive deformation of the bump 3 due to the inclination of the semiconductor element 1 can be prevented by the support 6, and at the same time, damage to the semiconductor element 1 is prevented. Can be relaxed. The diameter of the support 6 is set so that the bump 3 has a desired diameter after bonding.

  As a result, as shown in FIG. 1B, the bump 3 and the support 6 are solid-phase diffusion bonded to the electrode 8 of the wiring substrate 7, and the diameter after bonding of the support 6 is larger than that of the bump 3. . At this time, the semiconductor element 1 and the wiring board 7 are not electrically connected by the support 6. Further, since the component 4 is thicker than the wiring substrate 7, the region where the component 4 is mounted is mounted so as to protrude from the wiring substrate 7.

(Embodiment 2)
In the first embodiment, the component 4 mounted on the semiconductor element 1 is provided on the side opposite to the plurality of bumps 3 in FIG. 1A with the center P1 as a boundary. 1A is not offset in the vertical direction of the paper surface in FIG. 1A, but in the second embodiment, the position of the component 4 in the semiconductor element 1 is offset as shown in FIGS. 3A, 3B, and 3C. ing.

3C shows a semiconductor element used in the semiconductor device according to the second embodiment of the present invention, and FIGS. 3A and 3B show the semiconductor device of Comparative Example 2. FIG.
First, Comparative Example 2 in FIGS. 3A and 3B will be described.

  The component 4 is shifted from the center P1 of the semiconductor element 1 both in the vertical direction and the horizontal direction in the drawing, and is disposed close to the corner C1 of the semiconductor element 1, and the space outside the component 4 is small and more. Nothing can be placed. Other than that is the same as Comparative Example 1.

  When the semiconductor element 1 is face-downed and connected to the electrodes 8 of the wiring board 7 in a lump, the center P1 of the semiconductor element 1 is held, and when the flip chip bonding is performed using, for example, ultrasonic vibration, the center P1 As shown in FIG. 3 (b), the semiconductor element 1 that holds and is pressed against the wiring board 7 has the component 4 of the semiconductor element 1 as indicated by a virtual line J4 with the broken line J3 shown in FIG. 3 (a) as a boundary. A tilting force is generated in the semiconductor element 1 by applying a moment force that rotates the provided side downward.

  Therefore, in this comparative example 2, when ultrasonic vibration occurs, deterioration of the weight balance is promoted, and the semiconductor element 1 is further inclined and joined to the side on which the component 4 is mounted. Further, among the plurality of bumps 3, the bump 3 closer to the broken line J <b> 3 receives a load and deforms more than necessary, and damages the semiconductor element 1.

  In contrast to the comparative example 2, in the semiconductor device of the second embodiment, as shown in FIG. 3C, the center P2 of the component 4 and the center P3 of the region where the bumps 3 are arranged are connected to the semiconductor element 1. A dummy electrode 5 is provided in a region (lower side) where the component 4 is offset from the center of the semiconductor element 1 with respect to the elliptical line segment J5, and a support body 6 is provided on the dummy electrode 5.

  If the support 6 is disposed in this region, the support 6 comes into contact with the electrode 8 before the bump 3, and the support 6 prevents excessive deformation of the bump 3 due to the inclination of the semiconductor element 1. can do. The rest is the same as in the first embodiment.

In addition, the bump 3 region may be formed so that all the bumps 3 can be accommodated by forming a quadrangle with each of the outermost bumps 3 as a vertex.
(Embodiment 3)
In the first embodiment, the plurality of pumps 3 are evenly arranged in the symmetrical position of the region where the component 4 is mounted with respect to the center P1 of the semiconductor element 1, but in this third embodiment, As shown in FIGS. 4A and 4B, the positions of the bumps 3 in the semiconductor element 1 are not uniform but are offset.

FIG. 4B shows a semiconductor element used in the semiconductor device according to the third embodiment of the present invention, and FIG. 4A shows a semiconductor element used in the semiconductor device of Comparative Example 3.
First, Comparative Example 3 in FIG.

The plurality of bumps 3 are arranged in an L shape with a position close to the corner C2 of the semiconductor element 1 as a bending point of the array. Others are the same as those of Comparative Example 2.
When the semiconductor element 1 is face-downed and collectively connected to the electrodes 8 of the wiring substrate 7, the center P1 of the semiconductor element 1 is held and, for example, when flip chip bonding is performed using ultrasonic vibration, the semiconductor element 1 Is applied with a moment force that rotates the direction in which the component 4 of the semiconductor element 1 is provided downward, as indicated by a virtual line J2 in FIG. 2B, with the broken line J1 passing through the center P1 as a boundary. As a result, the semiconductor element 1 is inclined.

  Therefore, in this comparative example 3, when ultrasonic vibration occurs, deterioration of the weight balance is promoted, and the semiconductor element 1 is further inclined and joined to the side on which the component 4 is mounted. Further, the bumps 3 arranged in an inclined direction (= close to the center P1) among the plurality of bumps 3 are subjected to a load and are deformed more than necessary, thereby damaging the semiconductor element 1.

  In contrast to the comparative example 3, in the semiconductor device of the third embodiment, the dummy electrode 5 is provided between the component 4 and the bump 3 in the semiconductor element 1 as shown in FIG. The distance L1 is equal to the distance L2 from the bump 3 closest to the component 4. A support 6 is provided on the dummy electrode 5.

  According to this configuration, since the component 4 is displaced in only one direction from the center P1 of the semiconductor element 1, the inclination direction of the semiconductor element 1 is also one direction. The support 6 comes into contact with the electrode 8 before 3, and the support 6 can prevent excessive deformation of the bump 3 due to the inclination of the semiconductor element 1. The rest is the same as in the first embodiment.

  The position of the support 6 does not necessarily have to be equidistant from the component 4 and the bump 3 closest to the component 4. If the support 6 is closer to the component 4 than the bump 3 closest to the component 4, First, the support 6 comes into contact with the electrode 8, and excessive deformation of the bump 3 due to the inclination of the semiconductor element 1 can be prevented by the support 6.

(Embodiment 4)
In the second embodiment, the plurality of pumps 3 are evenly arranged in a symmetrical position in the region where the component 4 is mounted with respect to the center P1 of the semiconductor element 1, but in this fourth embodiment, As shown in FIGS. 5A and 5B, the positions of the bumps 3 in the semiconductor element 1 are not uniform but are offset.

FIG. 5B shows a semiconductor element used in the semiconductor device of Embodiment 4 of the present invention, and FIG. 5A shows a semiconductor element used in the semiconductor device of Comparative Example 4.
First, the comparative example 4 of Fig.5 (a) is demonstrated.

  The plurality of bumps 3 are arranged in an L shape with a position close to the corner C2 of the semiconductor element 1 as a bending point of the array. The component 4 is shifted from the center P1 of the semiconductor element 1 both in the vertical direction and the horizontal direction in the drawing, and is disposed close to the corner C1 of the semiconductor element 1, and the space outside the component 4 is small and more. Nothing can be placed. Other than that is the same as Comparative Example 2.

  When flip-chip bonding is performed using, for example, ultrasonic vibration while holding the center P1 of the semiconductor element 1 in order to connect the semiconductor element 1 face down to the electrodes 8 of the wiring substrate 7 at once, as shown in FIG. A tilt is generated in the semiconductor element 1 due to the moment force acting to rotate the part where the component 4 of the semiconductor element 1 is provided downward from the broken line J3 shown in a).

  Therefore, in this comparative example 4, when ultrasonic vibration occurs, deterioration of the weight balance is promoted, and the semiconductor element 1 is further inclined and joined to the side on which the component 4 is mounted. Further, among the plurality of bumps 3, the bump 3 closer to the broken line J <b> 3 receives a load and deforms more than necessary, and damages the semiconductor element 1.

  In contrast to the comparative example 4, in the semiconductor device of the fourth embodiment, the center P2 of the component 4 and the center P4 of the bump 3 closest to the component 4 are connected to the semiconductor element 1 as shown in FIG. The dummy electrode 5 is provided on the broken line J6, and the support 6 is provided on the dummy electrode 5.

  If the support body 6 is arranged at this position, the support body 6 comes into contact with the electrode 8 before the bump 3, and excessive deformation of the bump 3 due to the inclination of the semiconductor element 1 is prevented by the support body 6. can do. The rest is the same as in the second embodiment.

(Embodiment 5)
In the first embodiment, the semiconductor element 1 is flipped to the wiring board 7 by inserting a support 6 made of a stud bump or a plating bump between the dummy electrode 5 of the semiconductor element 1 and the electrode 8 of the wiring board 7. Although the configuration is such that the inclination of the semiconductor element 1 with respect to the wiring substrate 7 at the time of chip bonding is corrected, in the fifth embodiment shown in FIGS. An electrode 9 higher than the electrode 8 of the first embodiment is disposed at a position corresponding to the position, and the inclination of the semiconductor element 1 with respect to the wiring board 7 when the semiconductor element 1 is flip-chip bonded to the wiring board 7 is The electrode 9 is configured to be in contact with the dummy electrode 5 for correction by the step 9. The rest is the same as in the first embodiment.

  In any of the second to fourth embodiments, as in the first embodiment, a support made of a stud bump or a plating bump is provided between the dummy electrode 5 of the semiconductor element 1 and the electrode 8 of the wiring board 7. Although the configuration is such that the inclination of the semiconductor element 1 with respect to the wiring board 7 when the semiconductor element 1 is flip-chip bonded to the wiring board 7 with the body 6 interposed therebetween, the wiring is similar to the embodiment. On the substrate 7, an electrode 9 higher than the electrode 8 of the first embodiment is disposed at a position corresponding to the position of the dummy electrode 5, and the wiring substrate when the semiconductor element 1 is flip-chip bonded to the wiring substrate 7. The inclination of the semiconductor element 1 with respect to 7 can be corrected by the step of the electrode 9 so that the electrode 9 abuts against the dummy electrode 5.

  The semiconductor device of the present invention has an effect of alleviating damage to the semiconductor element, and is useful when flip-chip bonding a structure in which a component is mounted on the semiconductor element.

1 Semiconductor element 2 Electrode (first electrode)
3 Bump 4 Component 5 Dummy electrode 6 Support 7 Wiring board 8, 9 Electrode (second electrode)
P1 Center of semiconductor element 1 P2 Center of component 4 P3 Center of area where bump 3 is arranged C1, C2 Corner of semiconductor element 1

Claims (11)

A semiconductor device in which a first electrode formed on a semiconductor element and a second electrode provided on a wiring board to be mounted face each other, and the first electrode and the second electrode are joined via a bump Because
The semiconductor element is
A component mounted apart from the first electrode on the same surface as the surface on which the first electrode is disposed;
A dummy electrode mounted on the same surface as the surface on which the first electrode is disposed and between the first electrode and the component;
A semiconductor device in which a support for correcting an inclination of the semiconductor element with respect to the wiring board when the semiconductor element is flip-chip bonded to the wiring board is interposed between the dummy electrode and the wiring board. A semiconductor device in which a first electrode formed on a semiconductor element and a second electrode provided on a wiring board to be mounted face each other, and the first electrode and the second electrode are joined via a bump Because
The semiconductor element is
A component mounted apart from the first electrode on the same surface as the surface on which the first electrode is disposed;
A dummy electrode mounted on the same surface as the surface on which the first electrode is disposed and between the first electrode and the component;
A semiconductor device in which a support is interposed between the dummy electrode and a second electrode provided on the wiring board. The support is a region where the component is offset from the center of the semiconductor element with respect to a line segment connecting the center of the component and the center of the region where the bump is disposed on the semiconductor element. The semiconductor device according to claim 2, wherein the semiconductor device is disposed on the substrate. The planar shape of the semiconductor element is a quadrilateral, and the component is arranged so as to be offset from the center of the semiconductor element in both a vertical direction and a horizontal direction, and is arranged close to one corner of the semiconductor element. Item 4. The semiconductor device according to Item 3. The semiconductor device according to claim 2, wherein the support is disposed between a bump closest to the component among the plurality of bumps and the component. The support is disposed between a bump closest to the component among the plurality of bumps and the component, and a distance between the component and the support: L1, a bump closest to the component and the bump 3. The semiconductor device according to claim 2, wherein L1 = L2 when the distance from the support is L2. The support is disposed between a bump closest to the component among the plurality of bumps and the component, and above a line segment connecting the center of the component and the center of the bump closest to the component. The semiconductor device according to claim 2, wherein the semiconductor device is disposed on the substrate. The semiconductor device according to claim 1, wherein a diameter of the support is larger than a diameter of the bump. The semiconductor device according to claim 1, wherein the support is a stud bump or a plating bump. The semiconductor device according to claim 1, wherein the support is a convex portion formed by a step of the second electrode on the wiring board. The semiconductor device according to claim 1, wherein the bump is a stud bump or a plating bump.

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