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JP5256159B2 - Semiconductor package - Google Patents
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JP5256159B2 - Semiconductor package - Google Patents

Semiconductor package Download PDF

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JP5256159B2
JP5256159B2 JP2009225724A JP2009225724A JP5256159B2 JP 5256159 B2 JP5256159 B2 JP 5256159B2 JP 2009225724 A JP2009225724 A JP 2009225724A JP 2009225724 A JP2009225724 A JP 2009225724A JP 5256159 B2 JP5256159 B2 JP 5256159B2
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semiconductor chip
die pad
plate portion
rising
arrangement plate
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JP2011077211A (en
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登志幸 玉手
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Shindengen Electric Manufacturing Co Ltd
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Shindengen Electric Manufacturing Co Ltd
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/531Shapes of wire connectors
    • H10W72/536Shapes of wire connectors the connected ends being ball-shaped
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Lead Frames For Integrated Circuits (AREA)

Description

この発明は、樹脂封止型の半導体パッケージに関する。   The present invention relates to a resin-encapsulated semiconductor package.

従来の半導体パッケージとしては、例えば図4に示すように、半導体チップ101を半田により板状に形成された金属製のダイパッド102の上面に固定し、これら半導体チップ101及びダイパッド102を封止樹脂103により封止したものがある(例えば、特許文献1参照)。
また、この種の半導体パッケージには、半導体チップ101において生じた熱を効率よく外方に放熱するために、ダイパッド102の下面を封止樹脂103から外方に露出させたものもある。
As a conventional semiconductor package, for example, as shown in FIG. 4, a semiconductor chip 101 is fixed to the upper surface of a metal die pad 102 formed in a plate shape by soldering, and the semiconductor chip 101 and the die pad 102 are sealed with a sealing resin 103. (For example, refer to Patent Document 1).
In addition, there is a semiconductor package of this type in which the lower surface of the die pad 102 is exposed outward from the sealing resin 103 in order to efficiently dissipate heat generated in the semiconductor chip 101 outward.

特開平11−312775号公報JP 11-31775 A

しかしながら、上記従来の半導体パッケージに対して熱サイクル試験や熱疲労試験あるいは吸湿リフローを実施する等して、半導体パッケージを加熱冷却すると、ダイパッド102と封止樹脂103との材質の違いに基づく両者間の熱膨張係数の差によって、半導体チップ101とダイパッド102とが剥離してしまう虞がある。
より具体的に説明すれば、半導体パッケージを加熱冷却した際には、ダイパッド102の上面に沿う方向(面方向)に膨張収縮する量の差が、ダイパッド102と封止樹脂103との間で特に大きくなるため、半導体チップ101とダイパッド102とを接合する半田には大きなせん断応力が発生する。これにより、半田にクラックが生じる等して、半導体チップ101とダイパッド102とが剥離する。この剥離現象は、ダイパッド102の下面が外方に露出する構成の半導体パッケージにおいて特に生じ易い。
なお、従来では、例えばダイパッド102の上面に溝を形成し、この溝に封止樹脂103を係合させることで、上記剥離現象を抑制することも考えられている。しかしながら、このような構成では、半導体パッケージの加熱冷却を繰り返すことによる半田の疲労を十分に抑えることができず、依然として剥離現象を十分に抑制できない、という問題がある。特に、ダイパッド102の厚さ寸法が薄くなるほど溝の深さ寸法も小さくなることから、溝と封止樹脂103との係合を十分に確保できないため、ダイパッド102と封止樹脂103との密着性が十分に得られず、前述した剥離現象が生じ易い。
However, when the semiconductor package is heated and cooled by performing a thermal cycle test, a thermal fatigue test, or a moisture absorption reflow on the conventional semiconductor package, the difference between the two is based on the material difference between the die pad 102 and the sealing resin 103. There is a possibility that the semiconductor chip 101 and the die pad 102 may be separated due to the difference in thermal expansion coefficient.
More specifically, when the semiconductor package is heated and cooled, the difference in the amount of expansion and contraction in the direction along the upper surface of the die pad 102 (surface direction) is particularly significant between the die pad 102 and the sealing resin 103. Therefore, a large shear stress is generated in the solder that joins the semiconductor chip 101 and the die pad 102. As a result, the semiconductor chip 101 and the die pad 102 are peeled off due to, for example, cracks in the solder. This peeling phenomenon is particularly likely to occur in a semiconductor package having a configuration in which the lower surface of the die pad 102 is exposed to the outside.
Conventionally, for example, it has been considered to suppress the peeling phenomenon by forming a groove on the upper surface of the die pad 102 and engaging the sealing resin 103 with the groove. However, in such a configuration, there is a problem that solder fatigue due to repeated heating and cooling of the semiconductor package cannot be sufficiently suppressed, and the peeling phenomenon cannot be sufficiently suppressed. In particular, since the depth dimension of the groove becomes smaller as the thickness dimension of the die pad 102 becomes thinner, sufficient engagement between the groove and the sealing resin 103 cannot be ensured, so that the adhesion between the die pad 102 and the sealing resin 103 is reduced. Is not sufficiently obtained, and the aforementioned peeling phenomenon is likely to occur.

この発明は、上述した事情に鑑みたものであって、半導体チップとダイパッドとの剥離抑制の効果を高めることが可能な半導体パッケージを提供することを目的とする。   The present invention has been made in view of the above-described circumstances, and an object of the present invention is to provide a semiconductor package capable of enhancing the effect of suppressing peeling between a semiconductor chip and a die pad.

この課題を解決するために、本発明の半導体パッケージは、板材によって形成されたダイパッド部と、該ダイパッド部のうち平板状に形成された配置板部の上面に半田を介して接合される半導体チップと、これらダイパッド部及び半導体チップを封止する封止樹脂とを備え、前記ダイパッド部が、前記配置板部から屈曲して前記上面の上方に延びる立ち上がり部と、該立ち上がり部の上端から該立ち上がり部と逆向きに屈曲して前記上面に沿って前記配置板部から離間する方向に延びる折り返し部とからなる多重折曲部を有して構成され、前記立ち上がり部が、前記上面に対向するように前記配置板部の上面の周縁から外側に延びる仮想の延長線に対して90度以上の角度で屈曲され、前記多重折曲部が、封止樹脂によって封止され、前記上面に対する前記立ち上がり部の上端の高さ位置が、前記半導体チップの上面よりも高く、前記多重折曲部が、前記半導体チップを挟み込む位置に一対形成され、前記立ち上がり部及び前記折り返し部が、前記配置板部に対して一方向に並べて配され、前記立ち上がり部及び前記折り返し部の幅方向の寸法が、前記配置板部の幅方向の寸法と等しいことを特徴とする。
In order to solve this problem, a semiconductor package of the present invention includes a die pad portion formed of a plate material, and a semiconductor chip joined to the upper surface of a plate-shaped arrangement plate portion of the die pad portion via solder. And a sealing resin for sealing the die pad part and the semiconductor chip, the die pad part being bent from the arrangement plate part and extending above the upper surface, and the rising part from the upper end of the rising part And a bent portion that is bent in a direction opposite to the portion and extends in a direction away from the arrangement plate portion along the upper surface, and the rising portion faces the upper surface. the bent at an angle of more than 90 degrees to an imaginary extended line from the periphery of the upper surface extending outward of the placement plate portion, the multiple bent portions are sealed by a sealing resin, the upper The height position of the upper end of the rising portion with respect to the semiconductor chip is higher than the upper surface of the semiconductor chip, a pair of the multiple bent portions are formed at the positions sandwiching the semiconductor chip, and the rising portion and the folded portion are arranged in the arrangement It is arranged in one direction with respect to the plate part, and the dimension in the width direction of the rising part and the folded part is equal to the dimension in the width direction of the arrangement plate part.

本発明の半導体パッケージにおいては、多重折曲部の立ち上がり部が、平板状態のダイパッド部を90度以上の角度で折り曲げることで画成されているため、配置板部の上面とこれに対向する立ち上がり部との間の空間領域は、配置板部の面方向に沿って半導体チップから立ち上がり部に向かうにしたがって狭くなる先細り状に形成されている。さらに、折り返し部も、平板状態のダイパッド部を90度以上の角度で折り曲げることで画成されているため、立ち上がり部と折り返し部との空間領域は、配置板部と立ち上がり部との空間領域とは逆向きの先細り状に形成されている。   In the semiconductor package of the present invention, the rising portion of the multiple bent portion is defined by bending the flat die pad portion at an angle of 90 degrees or more. The space region between the portions is formed in a tapered shape that becomes narrower from the semiconductor chip toward the rising portion along the surface direction of the arrangement plate portion. Furthermore, since the folded portion is also defined by folding the flat die pad portion at an angle of 90 degrees or more, the space region between the rising portion and the folded portion is the space region between the arrangement plate portion and the rising portion. Is formed in a tapered shape in the opposite direction.

そして、封止樹脂は、配置板部と立ち上がり部との狭窄な空間領域や立ち上がり部と折り返し部との狭窄な空間領域にそれぞれ入り込むことで多重折曲部に係合しているため、半導体パッケージが加熱冷却されても、封止樹脂と配置板部との間でこれらが膨張収縮する量の差を大きく減少させることができる。言い換えれば、配置板部に対する封止樹脂の膨張収縮を十分に抑制することができる。特に、前述した2つの空間領域は、配置板部の面に沿って半導体チップと多重折曲部とを配列した方向(配列方向)において互いに逆向きに先細る形状となっているため、封止樹脂と配置板部との間で前記配列方向に膨張収縮する量の差を減少させることができる。   The sealing resin engages with the multiple bent portions by entering the narrow space region between the arrangement plate portion and the rising portion and the narrow space region between the rising portion and the folded portion, respectively. Even if heated and cooled, the difference in the amount of expansion and contraction between the sealing resin and the arrangement plate portion can be greatly reduced. In other words, the expansion and contraction of the sealing resin with respect to the arrangement plate portion can be sufficiently suppressed. In particular, the above-described two spatial regions have shapes that taper in opposite directions in the direction (arrangement direction) in which the semiconductor chips and the multiple bent portions are arranged along the surface of the arrangement plate portion. The difference in the amount of expansion and contraction in the arrangement direction between the resin and the arrangement plate portion can be reduced.

以上のことから、半導体パッケージを加熱冷却しても、半導体チップと配置板部とを接合する半田には大きなせん断応力が発生せず、また、半導体パッケージの加熱冷却を繰り返すことによる半田の疲労も十分に抑えることができる。したがって、半導体チップと配置板部との剥離抑制の効果を高めることができる。
また、封止樹脂に係合する多重折曲部は、平板状態のダイパッド部を屈曲することで構成されているため、従来のようにダイパッド上面に溝を形成する場合と比較して、ダイパッド部の厚さ寸法が薄く設定されても、半導体チップの剥離防止を容易に図ることが可能である。
From the above, even when the semiconductor package is heated and cooled, no large shear stress is generated in the solder that joins the semiconductor chip and the placement plate, and solder fatigue due to repeated heating and cooling of the semiconductor package It can be suppressed sufficiently. Therefore, the effect of suppressing peeling between the semiconductor chip and the arrangement plate portion can be enhanced.
In addition, since the multiple bent portion that engages with the sealing resin is formed by bending the die pad portion in a flat plate state, the die pad portion is compared with the case where a groove is formed on the upper surface of the die pad as in the prior art. Even if the thickness dimension is set to be thin, it is possible to easily prevent the semiconductor chip from peeling off.

さらに、配置板部の上面に対する立ち上がり部の上端の高さ位置が、半導体チップの上面よりも高いことにより、多重折曲部との係合によって配置板部に対する膨張収縮が抑制される封止樹脂の領域が、半導体チップ上方の領域にまで拡大されるため、半導体チップと配置板部とを接合する半田に掛かるせん断応力の大きさをさらに減少できる。
Further, the sealing resin in which expansion and contraction with respect to the arrangement plate portion is suppressed by the engagement with the multiple bent portions because the height position of the upper end of the rising portion relative to the upper surface of the arrangement plate portion is higher than the upper surface of the semiconductor chip Since this area is expanded to the area above the semiconductor chip, the magnitude of the shear stress applied to the solder joining the semiconductor chip and the placement plate portion can be further reduced.

また、多重折曲部が、半導体チップを挟み込む位置に一対形成されていることにより、封止樹脂のうち配置板部の上面から立ち上がり部の上端までの間で半導体チップを封止する部分(以下、チップ封止部分と呼ぶ。)が、一対の多重折曲部によって挟み込まれるため、半導体パッケージが加熱冷却されても、配置板部に対する前記チップ封止部分の前記配列方向への膨張収縮がさらに抑えられる。その結果として、封止樹脂と配置板部との間でこれらが膨張収縮する量の差をさらに減少させることができる。したがって、半導体チップと配置板部とを接合する半田に掛かるせん断応力の大きさをさらに減少できる。
In addition, by forming a pair of multiple bent portions at a position where the semiconductor chip is sandwiched, a portion of the sealing resin that seals the semiconductor chip between the upper surface of the arrangement plate portion and the upper end of the rising portion (hereinafter referred to as “a”). Is called a chip sealing portion.) Is sandwiched between a pair of multiple bent portions, so that even when the semiconductor package is heated and cooled, the expansion and contraction of the chip sealing portion with respect to the arrangement plate portion in the arrangement direction is further increased. It can be suppressed. As a result, the difference in the amount of expansion and contraction between the sealing resin and the arrangement plate portion can be further reduced. Therefore, the magnitude of the shear stress applied to the solder for joining the semiconductor chip and the arrangement plate portion can be further reduced.

さらに、上記構成に加え、立ち上がり部の高さ位置を半導体チップの上面よりも高く設定した場合には、一対の多重折曲部によって挟まれる前記チップ封止部分の領域が半導体チップの上方まで拡大されるため、前記チップ封止部分と配置板部との間でこれらが前記配列方向に膨張収縮する量の差を著しく減少させることができる。したがって、半導体チップと配置板部とを接合する半田に生じるせん断応力が著しく減少し、半導体チップが配置板部から剥離することを防止できる。   Furthermore, in addition to the above configuration, when the height of the rising portion is set higher than the upper surface of the semiconductor chip, the region of the chip sealing portion sandwiched between the pair of multiple bent portions expands to the upper side of the semiconductor chip. Therefore, the difference in the amount of expansion and contraction between the chip sealing portion and the arrangement plate portion in the arrangement direction can be significantly reduced. Therefore, the shear stress generated in the solder that joins the semiconductor chip and the arrangement plate portion is remarkably reduced, and the semiconductor chip can be prevented from peeling from the arrangement plate portion.

そして、前記半導体パッケージにおいては、前記上面に対する前記立ち上がり部の上端の高さ位置が、一対の前記多重折曲部の間で互いに異なっていてもよい。   And in the said semiconductor package, the height position of the upper end of the said rising part with respect to the said upper surface may mutually differ between a pair of said multiple bending parts.

また、前記半導体パッケージにおいては、前記上面に対する前記立ち上がり部の屈曲角度が、一対の前記多重折曲部の間で互いに異なっていてもよい。
この場合には、配置板部と立ち上がり部との空間領域における先細りの度合いが、一対の多重折曲部の間で互いに異なる。
In the semiconductor package, the bending angle of the rising portion with respect to the upper surface may be different between the pair of the multiple bent portions.
In this case, the degree of taper in the space region between the arrangement plate portion and the rising portion is different between the pair of multiple bent portions.

本発明によれば、封止樹脂を多重折曲部に係合させることで、半導体パッケージの加熱冷却に基づく半導体チップとダイパッド部との剥離抑制の効果を高めることができる。特に、半導体チップとダイパッド部との剥離防止に寄与する多重折曲部は、ダイパッド部の屈曲によって構成されるため、ダイパッド部の厚さ寸法が薄く設定されても、半導体チップの剥離防止を容易に図ることができる。   According to the present invention, the effect of suppressing the separation between the semiconductor chip and the die pad portion based on the heating and cooling of the semiconductor package can be enhanced by engaging the sealing resin with the multiple bent portions. In particular, the multiple bent portion that contributes to prevention of peeling between the semiconductor chip and the die pad portion is formed by bending the die pad portion, so that it is easy to prevent peeling of the semiconductor chip even if the thickness of the die pad portion is set thin. Can be aimed at.

本発明の一実施形態に係る半導体パッケージを示す概略平面図である。1 is a schematic plan view showing a semiconductor package according to an embodiment of the present invention. 図1のA−A矢視断面図である。It is AA arrow sectional drawing of FIG. 図1,2の半導体パッケージを構成するダイパッド部本体を示す拡大断面図である。It is an expanded sectional view which shows the die pad part main body which comprises the semiconductor package of FIG. 従来の半導体パッケージの一例を示す概略断面図である。It is a schematic sectional drawing which shows an example of the conventional semiconductor package.

以下、図1〜3を参照して本発明の一実施形態について説明する。
図1,2に示すように、この実施形態に係る半導体パッケージ1は、半導体チップ2、ダイパッド部3、リード4及び接続子5を封止樹脂6により封止して大略構成されている。
半導体チップ2は、例えばダイオードやトランジスタなどの半導体素子であり、平面視矩形の板状に形成されてその上面2a及び下面2bに電極を有して構成されている。
ダイパッド部3及びリード4は、銅などの導電性の板材をプレス加工等してなるリードフレームによって構成されるものである。
Hereinafter, an embodiment of the present invention will be described with reference to FIGS.
As shown in FIGS. 1 and 2, the semiconductor package 1 according to this embodiment is generally configured by sealing a semiconductor chip 2, a die pad portion 3, leads 4 and connectors 5 with a sealing resin 6.
The semiconductor chip 2 is a semiconductor element such as a diode or a transistor, for example, and is formed in a plate shape having a rectangular shape in plan view, and has electrodes on its upper surface 2a and lower surface 2b.
The die pad portion 3 and the lead 4 are constituted by a lead frame formed by pressing a conductive plate material such as copper.

ダイパッド部3は、平面視矩形板状のダイパッド部本体7と、ダイパッド部本体7に対して一体に連結された吊りリード8とを備えている。さらに、ダイパッド部本体7は、平板状に形成された配置板部11と、配置板部11から屈曲してその上面11aの上方に延びる立ち上がり部12と、その上端から該立ち上がり部12と逆向きに屈曲された折り返し部13とを備えている。
配置板部11の上面11aの中央部には、半田14を介して半導体チップ2が接合されており、これによって、半導体チップ2とダイパッド部3とが電気的に接続されている。
The die pad portion 3 includes a die pad portion main body 7 having a rectangular plate shape in plan view and a suspension lead 8 integrally connected to the die pad portion main body 7. Furthermore, the die pad main body 7 includes a flat plate-shaped arrangement plate portion 11, a rising portion 12 that is bent from the arrangement plate portion 11 and extends above the upper surface 11a, and is opposite to the rising portion 12 from its upper end. And a folded portion 13 that is bent.
The semiconductor chip 2 is joined to the central portion of the upper surface 11a of the arrangement plate portion 11 via the solder 14, whereby the semiconductor chip 2 and the die pad portion 3 are electrically connected.

立ち上がり部12は、配置板部11の上面11aに対向するように、例えば図3に示すように、配置板部11の上面11aの周縁から外側に延びる仮想の延長線L1に対して90度以上の角度で屈曲されている。すなわち、立ち上がり部12は、平板状態のダイパッド部3を90度以上の角度で折り曲げることで画成されている。これによって、配置板部11の上面11aに対する立ち上がり部12の角度θ(第一屈曲角度θ)が90度未満に設定されている。言い換えれば、配置板部11の上面11aとこれに対向する立ち上がり部12との間の空間領域21(第一空間領域21)が、配置板部11の面方向(X軸方向)に沿って半導体チップ2から立ち上がり部12に向かうにしたがって狭くなる先細り状に形成されている。   For example, as shown in FIG. 3, the rising portion 12 is 90 degrees or more with respect to a virtual extension line L <b> 1 extending outward from the peripheral edge of the upper surface 11 a of the arrangement plate portion 11 so as to face the upper surface 11 a of the arrangement plate portion 11. Is bent at an angle of That is, the rising portion 12 is defined by bending the flat die pad portion 3 at an angle of 90 degrees or more. Thus, the angle θ (first bending angle θ) of the rising portion 12 with respect to the upper surface 11a of the arrangement plate portion 11 is set to be less than 90 degrees. In other words, the space region 21 (first space region 21) between the upper surface 11a of the placement plate portion 11 and the rising portion 12 facing the semiconductor substrate is a semiconductor along the surface direction (X-axis direction) of the placement plate portion 11. It is formed in a tapered shape that becomes narrower from the chip 2 toward the rising portion 12.

一方、折り返し部13も、立ち上がり部12と同様に、平板状態のダイパッド部を90度以上の角度で折り曲げることで画成されている。そして、折り返し部13は、立ち上がり部12の上端に対し、配置板部11から離間するように配置板部11の面方向(X軸方向)に延びている。すなわち、配置板部11及び折り返し部13は互いに平行している。したがって、立ち上がり部12に対する折り返し部13の角度φ(第二屈曲角度φ)は、第一屈曲角度θと等しくなるように90度未満に設定されている。また、立ち上がり部12とこれに対向する折り返し部13との間の空間領域22(第二空間領域22)は、第一空間領域21とは逆向きの先細り状に形成されることになる。なお、前述した2つの屈曲角度θ,φは、少なくとも0度よりも大きく、かつ、90度未満に設定されていればよいが、例えば30度以上80度以下に設定されることがより好ましい。
これら立ち上がり部12及び折り返し部13は多重折曲部15を構成しており、この多重折曲部15は、半導体チップ2を挟み込む位置に一対形成されている。具体的には、配置板部11上の半導体チップ2を挟み込むように、平面視矩形状に形成された配置板部11の一方の対辺に沿う方向(X軸方向)の両端に一対設けられている。
On the other hand, like the rising portion 12, the folded portion 13 is also defined by bending a flat die pad portion at an angle of 90 degrees or more. The folded portion 13 extends in the surface direction (X-axis direction) of the arrangement plate portion 11 so as to be separated from the arrangement plate portion 11 with respect to the upper end of the rising portion 12. That is, the arrangement plate part 11 and the folded part 13 are parallel to each other. Therefore, the angle φ (second bending angle φ) of the folded portion 13 with respect to the rising portion 12 is set to be less than 90 degrees so as to be equal to the first bending angle θ. Further, the space region 22 (second space region 22) between the rising portion 12 and the folded-back portion 13 facing the rising portion 12 is formed in a tapered shape opposite to the first space region 21. The two bending angles θ and φ described above may be set to be at least greater than 0 degree and less than 90 degrees, but are more preferably set to, for example, 30 degrees or more and 80 degrees or less.
The rising portion 12 and the folded portion 13 constitute a multiple bent portion 15, and a pair of the multiple bent portions 15 are formed at positions where the semiconductor chip 2 is sandwiched. Specifically, a pair is provided at both ends in the direction along one opposite side (X-axis direction) of the placement plate portion 11 formed in a rectangular shape in plan view so as to sandwich the semiconductor chip 2 on the placement plate portion 11. Yes.

これら一対の多重折曲部15においては、いずれも配置板部11の上面11aに対する立ち上がり部12の上端の高さ位置が、半導体チップ2の上面2aよりも高く設定されている。
ただし、配置板部11の上面11aに対する立ち上がり部12の上端の高さ位置は、一対の多重折曲部15A,15Bの間で互いに異なっている。また、配置板部11の上面11aに対する立ち上がり部12の第一屈曲角度θも、一対の多重折曲部15A,15Bの間で互いに異なる。言い換えれば、第一空間領域21の先細り度合いが一対の多重折曲部15A,15Bの間で互いに異なっている。
In each of the pair of multiple bent portions 15, the height position of the upper end of the rising portion 12 with respect to the upper surface 11 a of the arrangement plate portion 11 is set higher than the upper surface 2 a of the semiconductor chip 2.
However, the height position of the upper end of the rising portion 12 with respect to the upper surface 11a of the arrangement plate portion 11 is different between the pair of multiple bent portions 15A and 15B. Further, the first bending angle θ of the rising portion 12 with respect to the upper surface 11a of the arrangement plate portion 11 is also different between the pair of multiple bent portions 15A and 15B. In other words, the taper degree of the first space region 21 is different between the pair of multiple bent portions 15A and 15B.

なお、本実施形態においては、配置板部11のX軸方向の一端側に設けられた一方の立ち上がり部12Aの上端が、配置板部11の他端側に設けられた他方の立ち上がり部12Bの上端よりも高く位置している。また、一方の立ち上がり部12Aの第一屈曲角度θAが、他方の立ち上がり部12Bの第一屈曲角度θBよりも大きく設定されている。すなわち、一方の第二屈曲角度φAは他方の第二屈曲角度φBよりも大きく設定されることになる。
また、X軸方向に沿う折り返し部13の長さ寸法についても、一対の多重折曲部15A,15Bの間で互いに異なる。なお、本実施形態においては、配置板部11の一端側に設けられた一方の折り返し部13Aの長さ寸法が、配置板部11の他端側に設けられた他方の折り返し部13Bの長さ寸法よりも短く設定されている。
In the present embodiment, the upper end of one rising portion 12A provided on one end side in the X-axis direction of the arrangement plate portion 11 is the other rising portion 12B provided on the other end side of the arrangement plate portion 11. It is located higher than the upper end. Further, the first bending angle θA of one rising portion 12A is set larger than the first bending angle θB of the other rising portion 12B. That is, one second bending angle φA is set larger than the other second bending angle φB.
Further, the length dimension of the folded portion 13 along the X-axis direction is also different between the pair of multiple bent portions 15A and 15B. In the present embodiment, the length dimension of one folded portion 13A provided on one end side of the placement plate portion 11 is equal to the length of the other folded portion 13B provided on the other end side of the placement plate portion 11. It is set shorter than the dimension.

図1に示すように、吊りリード8は、ダイパッド部本体7と比較して細長い形状を呈しており、配置板部11の一端側に設けられた一方の折り返し部13Aの端部のうちY軸方向の中間部分に対して一体に連結されている。この吊りリード8は、一方の折り返し部13Aの端部からさらに延長するようにX軸方向に延びている。
図1,2に示すように、リード4は、一方の折り返し部13Aの端部に対して間隔をあけて複数(図示例では2つ)配されており、それぞれ吊りリード8に平行してダイパッド部本体7から離間するようにX軸方向に延びている。また、各リード4は、吊りリード8や一方の折り返し部13Aと同じ高さ位置に配されている。
As shown in FIG. 1, the suspension lead 8 has an elongated shape as compared with the die pad unit body 7, and the Y axis is the end of one folded portion 13 </ b> A provided on one end side of the arrangement plate unit 11. It is integrally connected to the middle part of the direction. The suspension lead 8 extends in the X-axis direction so as to further extend from the end portion of the one folded portion 13A.
As shown in FIGS. 1 and 2, a plurality of leads 4 (two in the illustrated example) are arranged at intervals with respect to the end portion of one folded portion 13 </ b> A, and are parallel to the suspension leads 8 and die pads. It extends in the X-axis direction so as to be separated from the main part 7. Each lead 4 is arranged at the same height as the suspension lead 8 and one folded portion 13A.

各接続子5は、半導体チップ2上及びリード4上の両方に接合されており、これによって、半導体チップ2及びリード4が互いに電気接続されている。なお、接続子5は、図示例のようにボンディングワイヤによって構成されていてもよいが、例えば銅材等の板状部材によって構成されてもよい。そして、接続子5が板状部材からなる場合には、その両端が半田等の導電性接着剤を介して半導体チップ2やリード4に接合されればよい。
封止樹脂6は、半導体チップ2、ダイパッド部本体7及び接続子5を埋設するように形成されており、リード4及び吊リード8の延出方向先端側だけが封止樹脂6の外側に突出している。さらに詳細に説明すれば、封止樹脂6は、配置板部11と立ち上がり部12との間の狭窄な第一空間領域21や、立ち上がり部12と折り返し部13との狭窄な第二空間領域22にそれぞれ入り込んでおり、これによって、多重折曲部15に係合している。
Each connector 5 is joined to both the semiconductor chip 2 and the lead 4, whereby the semiconductor chip 2 and the lead 4 are electrically connected to each other. The connector 5 may be formed of a bonding wire as in the illustrated example, but may be formed of a plate-like member such as a copper material. And when the connector 5 consists of plate-shaped members, the both ends should just be joined to the semiconductor chip 2 and the lead | read | reed 4 via conductive adhesives, such as solder.
The sealing resin 6 is formed so as to embed the semiconductor chip 2, the die pad main body 7 and the connector 5, and only the leading end side in the extending direction of the lead 4 and the suspension lead 8 protrudes outside the sealing resin 6. ing. More specifically, the sealing resin 6 includes a narrow first space region 21 between the arrangement plate portion 11 and the rising portion 12 and a narrow second space region 22 between the rising portion 12 and the folded portion 13. , Respectively, thereby engaging the multiple bent portion 15.

上記構成の半導体パッケージ1によれば、配置板部11と立ち上がり部12との狭窄な第一空間領域21や、立ち上がり部12と折り返し部13との狭窄な第二空間領域22にそれぞれ入り込むことで多重折曲部15に係合しているため、半導体パッケージ1が加熱冷却されても、封止樹脂6と配置板部11との間でこれらが膨張収縮する量の差を大きく減少させることができる。言い換えれば、配置板部11に対する封止樹脂6の膨張収縮を十分に抑制することができる。
特に、本実施形態の半導体パッケージ1では、多重折曲部15が半導体チップ2を挟み込む位置に一対形成されると共に、各立ち上がり部12の高さ位置が半導体チップ2の上面2aよりも高く設定されているため、封止樹脂6のうち配置板部11上に位置して半導体チップ2を埋設する部分(例えば図2において第一空間領域21を含むチップ封止部分23)が、配置板部11に対して一対の多重折曲部15の配列方向(X軸方向)に膨張収縮することを特に抑制できる。すなわち、封止樹脂6と配置板部11との間でこの配列方向に膨張収縮する量の差を著しく減少させることができる。
According to the semiconductor package 1 having the above-described configuration, by entering the narrow first space region 21 between the arrangement plate portion 11 and the rising portion 12 and the narrow second space region 22 between the rising portion 12 and the folded portion 13, respectively. Since the multiple bent portion 15 is engaged, even if the semiconductor package 1 is heated and cooled, the difference in the amount of expansion and contraction between the sealing resin 6 and the arrangement plate portion 11 can be greatly reduced. it can. In other words, the expansion and contraction of the sealing resin 6 with respect to the arrangement plate portion 11 can be sufficiently suppressed.
In particular, in the semiconductor package 1 of the present embodiment, a pair of multiple bent portions 15 are formed at positions where the semiconductor chip 2 is sandwiched, and the height positions of the rising portions 12 are set higher than the upper surface 2 a of the semiconductor chip 2. Therefore, the portion of the sealing resin 6 that is located on the placement plate portion 11 and embeds the semiconductor chip 2 (for example, the chip sealing portion 23 including the first space region 21 in FIG. 2) is the placement plate portion 11. In contrast, the expansion and contraction in the arrangement direction (X-axis direction) of the pair of multiple bent portions 15 can be particularly suppressed. That is, the difference in the amount of expansion and contraction in the arrangement direction between the sealing resin 6 and the arrangement plate portion 11 can be significantly reduced.

以上のことから、半導体パッケージ1が加熱冷却されても、半導体チップ2と配置板部11とを接合する半田14に生じるせん断応力が著しく減少し、また、半導体パッケージ1の加熱冷却を繰り返すことによる半田14の疲労も十分に抑えることができる。したがって、半導体チップ2とダイパッド部3との剥離を防止することができる。
また、半導体チップ2とダイパッド部3との剥離防止に寄与する多重折曲部15は、ダイパッド部3の屈曲によって構成されるため、ダイパッド部3の厚さ寸法が薄く設定されても、半導体チップ2の剥離防止を容易に図ることができる。
From the above, even if the semiconductor package 1 is heated and cooled, the shear stress generated in the solder 14 that joins the semiconductor chip 2 and the arrangement plate portion 11 is remarkably reduced, and the heating and cooling of the semiconductor package 1 are repeated. The fatigue of the solder 14 can also be sufficiently suppressed. Therefore, peeling between the semiconductor chip 2 and the die pad portion 3 can be prevented.
In addition, since the multiple bent portion 15 that contributes to prevention of peeling between the semiconductor chip 2 and the die pad portion 3 is configured by bending of the die pad portion 3, even if the thickness dimension of the die pad portion 3 is set thin, the semiconductor chip 2 can be easily prevented from being peeled off.

また、本実施形態の半導体パッケージ1では、立ち上がり部12や折り返し部13が平板状態のダイパッド部3を90度以上の角度で折り曲げることにより画成されているため、半導体パッケージ1の加熱冷却によって、例えば封止樹脂6が配置板部11よりもX軸方向に大きく膨張しようとする際でも、立ち上がり部12に対する配置板部11や折り返し部13の屈曲角度θ,φを確実に保持することができる。
なお、立ち上がり部12に対して配置板部11や折り返し部13を90度未満の角度で折り曲げた半導体パッケージでは、半導体パッケージの加熱冷却によって封止樹脂6が配置板部11よりもX軸方向に大きく膨張しようとする際に、膨張する封止樹脂6によって立ち上がり部12が配置板部11の外側に押される等して、立ち上がり部12に対する配置板部11や折り返し部13の屈曲角度θ,φが大きくなってしまう。このため、前述した封止樹脂6と配置板部11との相対的な膨張収縮を抑えることはできない。
In the semiconductor package 1 of the present embodiment, the rising portion 12 and the folded portion 13 are defined by bending the flat die pad portion 3 at an angle of 90 degrees or more. For example, even when the sealing resin 6 is about to expand more in the X-axis direction than the arrangement plate portion 11, the bending angles θ and φ of the arrangement plate portion 11 and the folded portion 13 with respect to the rising portion 12 can be reliably held. .
Note that in a semiconductor package in which the placement plate portion 11 and the folded portion 13 are bent at an angle of less than 90 degrees with respect to the rising portion 12, the sealing resin 6 is moved more in the X-axis direction than the placement plate portion 11 by heating and cooling of the semiconductor package. When the expansion resin is greatly expanded, the rising portion 12 is pushed to the outside of the arrangement plate portion 11 by the expanding sealing resin 6, so that the bending angles θ and φ of the arrangement plate portion 11 and the folded portion 13 with respect to the rising portion 12. Will become bigger. For this reason, the relative expansion and contraction between the sealing resin 6 and the arrangement plate portion 11 described above cannot be suppressed.

なお、上記実施形態において、配置板部11の一端側に設けられる一方の多重折曲部15Aは、ダイパッド部本体7のみに形成されるとしたが、少なくともダイパッド部3に形成されていればよい。したがって、一方の多重折曲部15Aは、例えば吊リード8のみに形成されてもよいし、例えばダイパッド部本体7及び吊リード8の両方に形成されてもよい。言い換えれば、一方の立ち上がり部12A及び折り返し部13Aが両方とも吊りリード8に形成されてもよいし、あるいは、一方の立ち上がり部12Aがダイパッド部本体7及び吊りリード8の両方に形成されると共に折り返し部13Aが吊リード8に形成されてもよい。   In addition, in the said embodiment, although one multiple bending part 15A provided in the one end side of the arrangement | positioning board part 11 was formed only in the die pad part main body 7, it should just be formed in the die pad part 3 at least. . Accordingly, one of the multiple bent portions 15A may be formed only on the suspension lead 8, for example, or may be formed on both the die pad main body 7 and the suspension lead 8, for example. In other words, one rising portion 12A and the folded portion 13A may both be formed on the suspension lead 8, or one rising portion 12A may be formed on both the die pad main body 7 and the suspension lead 8 and folded. The part 13 </ b> A may be formed on the suspension lead 8.

また、配置板部11の上面11aに対する立ち上がり部12の上端の高さ位置、及び、配置板部11の上面11aに対する立ち上がり部12の第一屈曲角度θ、及び、折り返し部13の長さ寸法は、一対の多重折曲部15の間で互いに異なるとしたが、例えば同等に設定されていてもよい。
さらに、一対の多重折曲部15は、配置板部11のX軸方向の両端に設けられるとしたが、少なくとも半導体チップ2を挟み込むように配置板部11の面に沿う任意の一方向の両端に一対設けられていればよい。すなわち、一対の多重折曲部15は、例えば、配置板部11の他方の対辺に沿う方向(Y軸方向)に設けられてもよい。また、多重折曲部15は、例えばX軸方向の両端及びY軸方向の両端に一対ずつ設けられていてもよい。
Further, the height position of the upper end of the rising portion 12 with respect to the upper surface 11a of the arrangement plate portion 11, the first bending angle θ of the rising portion 12 with respect to the upper surface 11a of the arrangement plate portion 11, and the length dimension of the folded portion 13 are as follows. The pair of multiple bent portions 15 are different from each other, but may be set equally, for example.
Further, although the pair of multiple bent portions 15 are provided at both ends in the X-axis direction of the placement plate portion 11, both ends in any one direction along the surface of the placement plate portion 11 so as to sandwich at least the semiconductor chip 2 therebetween. It suffices if a pair is provided. That is, the pair of multiple bent portions 15 may be provided, for example, in a direction along the other opposite side of the arrangement plate portion 11 (Y-axis direction). In addition, a pair of multiple bent portions 15 may be provided, for example, at both ends in the X-axis direction and both ends in the Y-axis direction.

さらに、ダイパッド部3においては、配置板部11の上面11aに対する立ち上がり部12の上端の高さ位置が、例えば半導体チップ2の上面2aと同等でもよいし、例えば上面2aよりも低くてもよい。また、多重折曲部15は、例えば1つだけ設けられていても構わない。
このような構成であっても、封止樹脂6が多重折曲部15に係合していることから、配置板部11と封止樹脂6との間でこれらが膨張収縮する量の差を大きく減少させることが可能である。特に、多重折曲部15における2つの空間領域21,22は、配置板部11の面に沿って半導体チップ2と多重折曲部15とを配列した方向(配列方向、図示例におけるX軸方向)において互いに逆向きに先細る形状を呈しているため、封止樹脂6と配置板部11との間でこれらが前記配列方向に膨張収縮する量の差を著しく減少させることができる。
Further, in the die pad portion 3, the height position of the upper end of the rising portion 12 with respect to the upper surface 11a of the arrangement plate portion 11 may be equal to, for example, the upper surface 2a of the semiconductor chip 2, or may be lower than, for example, the upper surface 2a. Further, for example, only one multiple bending portion 15 may be provided.
Even in such a configuration, since the sealing resin 6 is engaged with the multiple bent portion 15, the difference in the amount of expansion and contraction between the arrangement plate portion 11 and the sealing resin 6 can be reduced. It can be greatly reduced. In particular, the two space regions 21 and 22 in the multiple bent portion 15 are arranged in the direction in which the semiconductor chip 2 and the multiple bent portion 15 are arranged along the surface of the arrangement plate portion 11 (arrangement direction, X-axis direction in the illustrated example). ), The difference in the amount of expansion and contraction between the sealing resin 6 and the arrangement plate portion 11 in the arrangement direction can be remarkably reduced.

ただし、例えば、立ち上がり部12の上端が半導体チップ2の上面2aよりも低く位置していても、半導体チップ2を挟み込むように一対の多重折曲部15を設けていれば、配置板部11上に位置する封止樹脂6のうち半導体チップ2の下面2b側を封止する部分(チップ封止部分)が一対の多重折曲部15の間に位置することになる。したがって、多重折曲部15を一対設けた場合には、1つだけ設けた場合と比較して、半導体パッケージ1を加熱冷却しても、少なくとも前記チップ封止部分が配置板部11に対して一対の多重折曲部15の配列方向(図示例におけるX軸方向)に膨張収縮しないため、封止樹脂6と配置板部11との間でこれらが前記配列方向に膨張収縮する量の差をさらに減少できる。その結果、半導体チップ2と配置板部11とを接合する半田14に掛かるせん断応力の大きさをさらに減少できる。   However, for example, even if the upper end of the rising portion 12 is positioned lower than the upper surface 2 a of the semiconductor chip 2, if the pair of multiple bent portions 15 are provided so as to sandwich the semiconductor chip 2, The portion (chip sealing portion) that seals the lower surface 2 b side of the semiconductor chip 2 in the sealing resin 6 positioned at is located between the pair of multiple bent portions 15. Therefore, when a pair of the multiple bent portions 15 are provided, at least the chip sealing portion is located with respect to the arrangement plate portion 11 even when the semiconductor package 1 is heated and cooled, as compared with the case where only one is provided. Since the pair of multiple bent portions 15 does not expand and contract in the arrangement direction (X-axis direction in the illustrated example), the difference in the amount of expansion and contraction between the sealing resin 6 and the arrangement plate portion 11 in the arrangement direction is determined. It can be further reduced. As a result, the magnitude of the shear stress applied to the solder 14 that joins the semiconductor chip 2 and the placement plate portion 11 can be further reduced.

また、例えば、多重折曲部15を1つだけ設けても、立ち上がり部12の上端が半導体チップ2の上面2aよりも高く位置していれば、多重折曲部15との係合によって配置板部11に対する膨張収縮が抑制される封止樹脂6の領域が、半導体チップ2上方の領域にまで拡大されることになる。したがって、立ち上がり部12の上端の高さ位置を半導体チップ2の上面2aよりも高く設定した場合には、上面2aと同等に設定した場合や上面2aよりも低く設定した場合と比較して、半導体チップ2と配置板部11とを接合する半田14に掛かるせん断応力の大きさをさらに減少できる。   Further, for example, even if only one multiple bent portion 15 is provided, if the upper end of the rising portion 12 is positioned higher than the upper surface 2 a of the semiconductor chip 2, the arrangement plate is engaged with the multiple bent portion 15. The region of the sealing resin 6 in which the expansion and contraction with respect to the portion 11 is suppressed is expanded to the region above the semiconductor chip 2. Therefore, when the height position of the upper end of the rising portion 12 is set higher than the upper surface 2a of the semiconductor chip 2, the semiconductor is compared with the case where it is set equal to the lower surface 2a or lower than the upper surface 2a. The magnitude of the shear stress applied to the solder 14 that joins the chip 2 and the placement plate portion 11 can be further reduced.

さらに、上記実施形態において、封止樹脂6は、ダイパッド部本体7全体を埋設するとしたが、ダイパッド部本体7のうち少なくとも配置板部11の上面11aを封止すると共に、第一空間領域21及び第二空間領域22に充填されるように、また、立ち上がり部12や折り返し部13を埋設するように多重折曲部15を封止していればよい。したがって、例えば配置板部11の下面11bが封止樹脂6の外側に露出していてもよい。   Furthermore, in the said embodiment, although the sealing resin 6 embed | buried the whole die pad part main body 7, while sealing the at least upper surface 11a of the arrangement | positioning board part 11 among the die pad part main bodies 7, and 1st space area | region 21 and The multiple bent portion 15 may be sealed so that the second space region 22 is filled and the rising portion 12 and the folded portion 13 are embedded. Therefore, for example, the lower surface 11 b of the arrangement plate portion 11 may be exposed to the outside of the sealing resin 6.

また、本発明の半導体パッケージは、上記実施形態のように上面2a及び下面2bに電極を有する半導体チップ2に限らず、例えば上面に複数の電極パッドを備えるICやLSI等の半導体チップにも適用可能である。   Further, the semiconductor package of the present invention is not limited to the semiconductor chip 2 having electrodes on the upper surface 2a and the lower surface 2b as in the above embodiment, but is also applied to a semiconductor chip such as an IC or LSI having a plurality of electrode pads on the upper surface, for example. Is possible.

以上、本発明の実施形態について図面を参照して詳述したが、具体的な構成はこの実施形態に限られるものではなく、本発明の要旨を逸脱しない範囲の設計変更等も含まれる。   As mentioned above, although embodiment of this invention was explained in full detail with reference to drawings, the concrete structure is not restricted to this embodiment, The design change etc. of the range which does not deviate from the summary of this invention are included.

1 半導体パッケージ
2 半導体チップ
3 ダイパッド部
4 リード
5 接続子
6 封止樹脂
11 配置板部
12,12A、12B 立ち上がり部
13,13A、13B 折り返し部
14 半田
15,15A、15B 多重折曲部
21 第一空間領域
22 第二空間領域
L1 仮想の延長線
θ,θA,θB 第一屈曲角度(屈曲角度)
φ,φA,φB 第二屈曲角度
DESCRIPTION OF SYMBOLS 1 Semiconductor package 2 Semiconductor chip 3 Die pad part 4 Lead 5 Connector 6 Sealing resin 11 Arrangement board part 12,12A, 12B Standing part 13,13A, 13B Folding part 14 Solder 15,15A, 15B Multiple bending part 21 1st Space region 22 Second space region L1 Virtual extension lines θ, θA, θB First bending angle (bending angle)
φ, φA, φB Second bending angle

Claims (3)

板材によって形成されたダイパッド部と、該ダイパッド部のうち平板状に形成された配置板部の上面に半田を介して接合される半導体チップと、これらダイパッド部及び半導体チップを封止する封止樹脂とを備え、
前記ダイパッド部が、前記配置板部から屈曲して前記上面の上方に延びる立ち上がり部と、該立ち上がり部の上端から該立ち上がり部と逆向きに屈曲して前記上面に沿って前記配置板部から離間する方向に延びる折り返し部とからなる多重折曲部を有して構成され、
前記立ち上がり部が、前記上面に対向するように前記配置板部の上面の周縁から外側に延びる仮想の延長線に対して90度以上の角度で屈曲され、
前記多重折曲部が、封止樹脂によって封止され、
前記上面に対する前記立ち上がり部の上端の高さ位置が、前記半導体チップの上面よりも高く、
前記多重折曲部が、前記半導体チップを挟み込む位置に一対形成され、
前記立ち上がり部及び前記折り返し部が、前記配置板部に対して一方向に並べて配され、
前記立ち上がり部及び前記折り返し部の幅方向の寸法が、前記配置板部の幅方向の寸法と等しいことを特徴とする半導体パッケージ。
A die pad portion formed of a plate material, a semiconductor chip bonded to the upper surface of a flat plate-shaped arrangement plate portion of the die pad portion, and a sealing resin for sealing the die pad portion and the semiconductor chip And
The die pad portion bends from the placement plate portion and extends above the upper surface, and bends from the upper end of the rise portion in the opposite direction to the rise portion and is separated from the placement plate portion along the upper surface. A multi-folded part composed of a folded part extending in the direction of
The rising portion is bent at an angle of 90 degrees or more with respect to a virtual extension line extending outward from the periphery of the upper surface of the arrangement plate portion so as to face the upper surface,
The multiple bent portion is sealed with a sealing resin;
The height position of the upper end of the rising portion with respect to the upper surface is higher than the upper surface of the semiconductor chip,
A pair of the multiple bent portions are formed at positions sandwiching the semiconductor chip,
The rising portion and the folded portion are arranged in one direction with respect to the arrangement plate portion,
The semiconductor package according to claim 1 , wherein a dimension in the width direction of the rising part and the folded part is equal to a dimension in the width direction of the arrangement plate part.
前記上面に対する前記立ち上がり部の上端の高さ位置が、一対の前記多重折曲部の間で互いに異なることを特徴とする請求項1に記載の半導体パッケージ。 The semiconductor package according to claim 1 , wherein a height position of an upper end of the rising portion with respect to the upper surface is different between the pair of the multiple bent portions. 前記上面に対する前記立ち上がり部の屈曲角度が、一対の前記多重折曲部の間で互いに異なることを特徴とする請求項1又は請求項2に記載の半導体パッケージ。
3. The semiconductor package according to claim 1 , wherein a bending angle of the rising portion with respect to the upper surface is different between the pair of the multiple bent portions.
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