JP5265076B2 - 光起電性構成部材とその製造方法 - Google Patents
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- JP5265076B2 JP5265076B2 JP2004556164A JP2004556164A JP5265076B2 JP 5265076 B2 JP5265076 B2 JP 5265076B2 JP 2004556164 A JP2004556164 A JP 2004556164A JP 2004556164 A JP2004556164 A JP 2004556164A JP 5265076 B2 JP5265076 B2 JP 5265076B2
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- H—ELECTRICITY
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- H10K30/30—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising bulk heterojunctions, e.g. interpenetrating networks of donor and acceptor material domains
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- H—ELECTRICITY
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- H10K71/611—Forming conductive regions or layers, e.g. electrodes using printing deposition, e.g. ink jet printing
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/50—Photovoltaic [PV] devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/211—Fullerenes, e.g. C60
- H10K85/215—Fullerenes, e.g. C60 comprising substituents, e.g. PCBM
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Description
基板の上に正電極(典型的にはITO、即ち酸化インジウム錫)を設ける。その上に必要により中間層として、例えば、陰イオンとしてPSS含有のPEDOTからなるホール導電層が設けられる。その隣接層は吸収剤、即ち光起電性活性材料であり、通常は有機半導体(例えば、共役ポリマーとフラーレンとの混合物)である。これに陰極、即ちカソード(例えば、Ca/AgまたはLiF/Al)が続く。従来カソード材料として用いられてきたのは、非貴金属であって、例えばカルシウム、バリウム、フッ化リチウム、もしくは類似の材料であり、それらの材料は仕事関数が低かった。これらの電極は蒸着もしくはスパッタリングにより調製される。しかし、これらのカソード材料の感受性から、最良の結果を得るには、これらから成る層は、真空中にて調製されねばならない。
上にある。
ITOからなる基板に設けられるのは半導体層であって、例えば、P3HT:PCBM(ポリ(3−ヘキシルチオフェン):〔6,6〕−フェニルC61 ブチル酸メチルエステル)(poly(3-hexylthiophene):[6,6]-phenyl C61 butyric acid methyl ester )混合物(低バンドギャップ)である。該半導体層は光起電性活性機能層を形成する。この層に続いて、例えばPEDOTからなる有機導電性機能層が置かれる。
先ず、例えばITO基板などの半透明基板に、半導体有機材料を塗布する。前記塗布は、印刷、スピン塗布などの大量生産に適する技術によって行うことが好ましい。好ましくは導電性有機材料よりなる頂部電極層もまた、半導体機能層に印刷技術を用いて設けることが好ましい。
例えば薄い箔もしくは薄い(極めて薄い)ガラスからなる基板1に対して、ITOからなる半透明な、もしくはアルミニウム、クロム、モリブデン、銅および/または亜鉛などの金属からなる不透明な底部電極2を設ける。この底部電極2に対して、光起電力活性であり、有機あるいは金属、もしくはハイブリッド材料であって、好ましくは溶媒での処理性が良好な半導体層3を設ける。この層の次には、半透明もしくは完全吸収性になされている頂部導電性機能層もしくは頂部電極4が設けられている。
形で存在してもよいし、同様に、無機粒子および/またはナノ粒子として存在してもよい。近似の、もしくは異なる電子親和力および/または近似のもしくは異なるバンドギャップを有する2種もしくはそれより多くの共役有機合成材料、無機粒子、および/またはナノ粒子の混合物であってもよい。
共役ポリマーや共役ポリマーを含有する混合物の薄膜は、スピン塗布によって製造できるし、他にもスクリーン印刷、インクジェット印刷、フレキソ印刷、グラビア印刷、凸版印刷もしくは平版印刷(もしくは他の/同等の溶剤付設工程)などの一般的な印刷方法によっても製造できる。ポリマーが用いられる場合には、これらの層は可撓性の基板上に付設することも可能である。
Claims (11)
- 基板と、
底部電極と、
有機材料よりなる光起電性活性層と、
主に有機材料からなる頂部電極とを備え、
前記底部電極は前記基板と前記光起電性活性層との間にあって第1の仕事関数を有し、
前記光起電性活性層は前記底部電極と前記頂部電極との間にあり、
前記頂部電極は不透明であり、かつ第1の仕事関数より高い第2の仕事関数を有することにより、前記底部電極はカソードとして作用し、前記頂部電極はアノードとして作用する、光起電性構成部材。 - リーケージ・コネクタが、前記構成部材が使用される際の抵抗損失を減少させるように前記頂部電極上に設けられている、請求項1に記載の構成部材。
- 前記リーケージ・コネクタが銀導電性ペーストよりなる、請求項2に記載の構成部材。
- 前記リーケージ・コネクタが前記頂部電極上に印刷される、請求項2に記載の構成部材。
- 前記頂部電極はPEDOTからなる、請求項1に記載の構成部材。
- 光起電性構成部材の製造方法であって、
基板に対して、第1の仕事関数を有する底部電極を設け、
その上に、有機材料からなる半導体光起電性活性機能層を設け、
さらに前記半導体光活性機能層上に主に有機材料からなる頂部電極を設ける、光起電性構成部材の製造方法であって、
前記頂部電極は不透明であり、かつ第1の仕事関数より高い第2の仕事関数を有することにより、前記底部電極はカソードとして作用し、前記頂部電極はアノードとして作用する光起電性構成部材の製造方法。 - 前記頂部電極は印刷技術により付設される、請求項6に記載の光起電性構成部材の製造方法。
- 前記頂部電極はPEDOTからなる、請求項6に記載の製造方法。
- リーケージ・コネクタが、前記構成部材が使用される際の抵抗損失を減少させるように前記頂部電極上に設けられている、請求項6に記載の製造方法。
- 前記リーケージ・コネクタが銀導電性ペーストよりなる、請求項9に記載の製造方法。
- 前記リーケージ・コネクタが前記頂部電極上に印刷される、請求項9に記載の製造方法。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10255964A DE10255964A1 (de) | 2002-11-29 | 2002-11-29 | Photovoltaisches Bauelement und Herstellungsverfahren dazu |
| DE10255964.3 | 2002-11-29 | ||
| PCT/EP2003/013095 WO2004051756A2 (de) | 2002-11-29 | 2003-11-21 | Photovoltaisches bauelement und herstellungsverfahren dazu |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| JP2012256169A Division JP2013034033A (ja) | 2002-11-29 | 2012-11-22 | 光起電性構成部材とその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2006508538A JP2006508538A (ja) | 2006-03-09 |
| JP5265076B2 true JP5265076B2 (ja) | 2013-08-14 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2004556164A Expired - Lifetime JP5265076B2 (ja) | 2002-11-29 | 2003-11-21 | 光起電性構成部材とその製造方法 |
| JP2012256169A Pending JP2013034033A (ja) | 2002-11-29 | 2012-11-22 | 光起電性構成部材とその製造方法 |
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| JP2012256169A Pending JP2013034033A (ja) | 2002-11-29 | 2012-11-22 | 光起電性構成部材とその製造方法 |
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| Country | Link |
|---|---|
| US (1) | US7612367B2 (ja) |
| EP (1) | EP1565947B1 (ja) |
| JP (2) | JP5265076B2 (ja) |
| KR (1) | KR100973018B1 (ja) |
| CN (2) | CN102738397A (ja) |
| AU (1) | AU2003292075A1 (ja) |
| DE (1) | DE10255964A1 (ja) |
| WO (1) | WO2004051756A2 (ja) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1447860A1 (en) * | 2003-02-17 | 2004-08-18 | Rijksuniversiteit Groningen | Organic material photodiode |
| EP1672653B1 (en) * | 2004-12-20 | 2019-07-17 | Merck Patent GmbH | Patterned photovoltaic cell |
| US20070181179A1 (en) * | 2005-12-21 | 2007-08-09 | Konarka Technologies, Inc. | Tandem photovoltaic cells |
| US20080006324A1 (en) * | 2005-07-14 | 2008-01-10 | Konarka Technologies, Inc. | Tandem Photovoltaic Cells |
| US7781673B2 (en) * | 2005-07-14 | 2010-08-24 | Konarka Technologies, Inc. | Polymers with low band gaps and high charge mobility |
| DE102006009452B4 (de) | 2005-10-20 | 2010-07-01 | Carl Zeiss Surgical Gmbh | Stereomikroskop |
| DE102006012388A1 (de) | 2005-10-20 | 2007-04-26 | Carl Zeiss Surgical Gmbh | Mikroskopiesystem |
| EP1974386A4 (en) * | 2006-01-04 | 2010-11-17 | Univ California | PASSIVATION LAYER FOR FLEXIBLE ELECTRONIC ARRANGEMENTS |
| DE102006010767B4 (de) * | 2006-03-08 | 2008-04-17 | Carl Zeiss Surgical Gmbh | Mikroskopiesystem |
| US8008421B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with silole-containing polymer |
| US8008424B2 (en) | 2006-10-11 | 2011-08-30 | Konarka Technologies, Inc. | Photovoltaic cell with thiazole-containing polymer |
| US7847364B2 (en) * | 2007-07-02 | 2010-12-07 | Alcatel-Lucent Usa Inc. | Flexible photo-detectors |
| JP5462998B2 (ja) * | 2007-08-10 | 2014-04-02 | 住友化学株式会社 | 組成物及び有機光電変換素子 |
| US20090229667A1 (en) * | 2008-03-14 | 2009-09-17 | Solarmer Energy, Inc. | Translucent solar cell |
| US8455606B2 (en) * | 2008-08-07 | 2013-06-04 | Merck Patent Gmbh | Photoactive polymers |
| EP2172986B1 (en) * | 2008-08-27 | 2013-08-21 | Honeywell International Inc. | Solar cell having hybrid hetero junction structure |
| US8367798B2 (en) | 2008-09-29 | 2013-02-05 | The Regents Of The University Of California | Active materials for photoelectric devices and devices that use the materials |
| EP2172987A1 (en) * | 2008-10-02 | 2010-04-07 | Honeywell International Inc. | Solar cell having tandem organic and inorganic structures and related system and method |
| DE102008051656A1 (de) | 2008-10-08 | 2010-04-15 | Technische Universität Ilmenau | Verfahren zum Aufbringen einer metallischen Elektrode auf eine Polymerschicht |
| US20100101636A1 (en) * | 2008-10-23 | 2010-04-29 | Honeywell International Inc. | Solar cell having supplementary light-absorbing material and related system and method |
| EP2404333A2 (en) * | 2009-03-05 | 2012-01-11 | Konarka Technologies, Inc. | Photovoltaic cell having multiple electron donors |
| US20100276071A1 (en) * | 2009-04-29 | 2010-11-04 | Solarmer Energy, Inc. | Tandem solar cell |
| US8440496B2 (en) * | 2009-07-08 | 2013-05-14 | Solarmer Energy, Inc. | Solar cell with conductive material embedded substrate |
| US8372945B2 (en) | 2009-07-24 | 2013-02-12 | Solarmer Energy, Inc. | Conjugated polymers with carbonyl substituted thieno[3,4-B]thiophene units for polymer solar cell active layer materials |
| KR20110015999A (ko) * | 2009-08-10 | 2011-02-17 | 삼성전자주식회사 | 태양 전지 및 그 제조 방법 |
| US8399889B2 (en) | 2009-11-09 | 2013-03-19 | Solarmer Energy, Inc. | Organic light emitting diode and organic solar cell stack |
| US20110232717A1 (en) * | 2010-02-18 | 2011-09-29 | OneSun, LLC | Semiconductors compositions for dye-sensitized solar cells |
| US20120285521A1 (en) * | 2011-05-09 | 2012-11-15 | The Trustees Of Princeton University | Silicon/organic heterojunction (soh) solar cell and roll-to-roll fabrication process for making same |
| US9073937B2 (en) | 2011-06-16 | 2015-07-07 | Board Of Trustees Of The University Of Alabama | Organic photovoltaic-battery hybrid device |
| JP6149856B2 (ja) | 2012-04-04 | 2017-06-21 | コニカミノルタ株式会社 | 有機光電変換素子およびこれを用いた太陽電池 |
| JP6925800B2 (ja) * | 2016-12-26 | 2021-08-25 | 株式会社東京精密 | 無線測定システム及び工作機械の測定装置 |
Family Cites Families (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4520086A (en) * | 1980-11-18 | 1985-05-28 | The United States Of America As Represented By The United States Department Of Energy | Rechargeable solid polymer electrolyte battery cell |
| DE3049551A1 (de) * | 1980-12-31 | 1982-07-29 | Basf Ag, 6700 Ludwigshafen | Elektrisch leitfaehige poly(pyrrol)-derivate |
| JPS5821876A (ja) | 1981-07-31 | 1983-02-08 | Seiko Epson Corp | 塗布型の太陽電池の製造方法 |
| DE3604917A1 (de) * | 1986-02-17 | 1987-08-27 | Messerschmitt Boelkow Blohm | Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen |
| JPS63289874A (ja) * | 1987-05-21 | 1988-11-28 | Ricoh Co Ltd | 光電変換素子 |
| JPH01154571A (ja) * | 1987-12-11 | 1989-06-16 | Ricoh Co Ltd | 光電変換素子 |
| US5196144A (en) * | 1988-10-31 | 1993-03-23 | The Regents Of The University Of California | Electrically conductive polyaniline |
| JPH03181181A (ja) * | 1989-12-11 | 1991-08-07 | Canon Inc | 光起電力素子 |
| US5331183A (en) * | 1992-08-17 | 1994-07-19 | The Regents Of The University Of California | Conjugated polymer - acceptor heterojunctions; diodes, photodiodes, and photovoltaic cells |
| JP2613719B2 (ja) * | 1992-09-01 | 1997-05-28 | キヤノン株式会社 | 太陽電池モジュールの製造方法 |
| DE19507413A1 (de) * | 1994-05-06 | 1995-11-09 | Bayer Ag | Leitfähige Beschichtungen |
| JPH07307483A (ja) * | 1994-05-11 | 1995-11-21 | Fuji Xerox Co Ltd | 有機太陽電池 |
| JP2992464B2 (ja) | 1994-11-04 | 1999-12-20 | キヤノン株式会社 | 集電電極用被覆ワイヤ、該集電電極用被覆ワイヤを用いた光起電力素子及びその製造方法 |
| JPH10112549A (ja) * | 1996-10-08 | 1998-04-28 | Canon Inc | 太陽電池モジュール |
| EP0851513B1 (en) | 1996-12-27 | 2007-11-21 | Canon Kabushiki Kaisha | Method of producing semiconductor member and method of producing solar cell |
| FR2759495B1 (fr) * | 1997-02-10 | 1999-03-05 | Commissariat Energie Atomique | Dispositif semiconducteur en polymere comportant au moins une fonction redresseuse et procede de fabrication d'un tel dispositif |
| AU8783998A (en) | 1997-08-15 | 1999-03-08 | Uniax Corporation | Organic diodes with switchable photosensitivity |
| GB9803763D0 (en) * | 1998-02-23 | 1998-04-15 | Cambridge Display Tech Ltd | Display devices |
| US6483099B1 (en) * | 1998-08-14 | 2002-11-19 | Dupont Displays, Inc. | Organic diodes with switchable photosensitivity |
| US6451415B1 (en) * | 1998-08-19 | 2002-09-17 | The Trustees Of Princeton University | Organic photosensitive optoelectronic device with an exciton blocking layer |
| JP4440359B2 (ja) * | 1998-09-17 | 2010-03-24 | 大日本印刷株式会社 | 有機太陽電池の製造方法 |
| US6500690B1 (en) * | 1999-10-27 | 2002-12-31 | Kaneka Corporation | Method of producing a thin-film photovoltaic device |
| KR100377321B1 (ko) * | 1999-12-31 | 2003-03-26 | 주식회사 엘지화학 | 피-형 반도체 성질을 갖는 유기 화합물을 포함하는 전기소자 |
| DE10024933A1 (de) | 2000-05-19 | 2001-11-22 | Bayer Ag | Polymerblends enthaltend Polyamid und über Masse-Polymerisationsverfahren hergestellte kautschukmodifizierte Polymerisate |
| DE10024993A1 (de) | 2000-05-22 | 2001-11-29 | Univ Bremen | Elektrisches Bauelement und Verfahren zu seiner Herstellung |
| JP2002222970A (ja) * | 2001-01-25 | 2002-08-09 | Fuji Xerox Co Ltd | 光電変換素子及びその製造方法 |
| DE60216257T2 (de) * | 2001-04-17 | 2007-06-14 | Matsushita Electric Industrial Co., Ltd., Kadoma | Leitfähiger organischer Dünnfilm, Verfahren zu dessen Herstellung, sowie Elektrde und elektrisches Kabel, die davon Gebrauch machen |
| US6746751B2 (en) * | 2001-06-22 | 2004-06-08 | Agfa-Gevaert | Material having a conductive pattern and a material and method for making a conductive pattern |
-
2002
- 2002-11-29 DE DE10255964A patent/DE10255964A1/de not_active Ceased
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2003
- 2003-11-21 JP JP2004556164A patent/JP5265076B2/ja not_active Expired - Lifetime
- 2003-11-21 CN CN2012100431766A patent/CN102738397A/zh active Pending
- 2003-11-21 KR KR1020057009671A patent/KR100973018B1/ko not_active Expired - Fee Related
- 2003-11-21 US US10/536,568 patent/US7612367B2/en not_active Expired - Lifetime
- 2003-11-21 AU AU2003292075A patent/AU2003292075A1/en not_active Abandoned
- 2003-11-21 WO PCT/EP2003/013095 patent/WO2004051756A2/de not_active Ceased
- 2003-11-21 CN CNA2003801072543A patent/CN1729580A/zh active Pending
- 2003-11-21 EP EP03767605.3A patent/EP1565947B1/de not_active Expired - Lifetime
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Also Published As
| Publication number | Publication date |
|---|---|
| KR100973018B1 (ko) | 2010-07-30 |
| JP2013034033A (ja) | 2013-02-14 |
| EP1565947A2 (de) | 2005-08-24 |
| US7612367B2 (en) | 2009-11-03 |
| CN102738397A (zh) | 2012-10-17 |
| US20060141662A1 (en) | 2006-06-29 |
| CN1729580A (zh) | 2006-02-01 |
| DE10255964A1 (de) | 2004-07-01 |
| JP2006508538A (ja) | 2006-03-09 |
| WO2004051756A2 (de) | 2004-06-17 |
| EP1565947B1 (de) | 2019-03-20 |
| KR20050088090A (ko) | 2005-09-01 |
| WO2004051756A3 (de) | 2005-06-23 |
| AU2003292075A1 (en) | 2004-06-23 |
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