JP5280139B2 - Semiconductor device manufacturing method and mounting substrate - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To suppress voids occurring when filling resins between a mounting substrate and a semiconductor chip. <P>SOLUTION: The method for manufacturing a semiconductor device includes the steps of: mounting the semiconductor chip 300 on a compartment region 200 of the mounting substrate 100; and filling the resin 400 between the semiconductor chip 300 and the mounting substrate 100. One end of the compartment region 200 is positioned under the semiconductor chip 300 and the other end has a first groove 210 positioned to a dicing line 110. The first groove 210 is parallel with the side intersecting with the first groove 210 out of the sides of the semiconductor chip 300 and not striding over the straight line S passing through the center of the semiconductor chip 300. In the process of filling the resin 400, the resin 400 penetrates in the direction intersecting with the first groove 210. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device, a semiconductor device, and a mounting substrate in which resin is filled between a mounting substrate and a semiconductor chip.

  One method for mounting a semiconductor chip on a mounting substrate is flip chip mounting. Flip chip mounting is a mounting method in which bumps of a semiconductor chip are directly connected to wiring of a mounting substrate, and a resin is filled in a space between the semiconductor chip and the mounting substrate. In this mounting method, the resin penetrates into the space between the semiconductor chip and the mounting substrate by capillary action, but this penetration speed is faster in the peripheral part of the semiconductor chip than in the central part. Will wrap around. For this reason, voids are easily generated in the resin.

  As techniques for suppressing the generation of voids in the resin, there are techniques described in Patent Document 1 and Patent Document 2. The technique described in Patent Document 1 forms a groove in a second semiconductor chip when the first semiconductor chip is flip-chip mounted on the second semiconductor chip. Although the groove is formed in the direction in which the resin is filled, it may be formed in a direction orthogonal to this direction. It is described that since the resin is poured along the groove, it is possible to prevent voids from being generated between the first semiconductor chip and the second semiconductor chip. In addition, a speed control groove may be formed at the outer peripheral position of the electrode of the first semiconductor chip.

The technique described in Patent Document 2 is provided with a protrusion located on the periphery of a semiconductor chip on a mounting substrate to inhibit the resin from wrapping around. Accordingly, it is described that the resin flow in the peripheral portion is delayed from the resin flowing in the central portion.
JP 2003-324182 A JP 10-50892 A

  However, when the resin is poured along the groove as described in Patent Document 1, the flow of the resin remains slow in the region located between the grooves, so that a void may be generated between the grooves. There was sex.

  In recent years, semiconductor devices have been miniaturized, and the difference in area between the mounting substrate and the semiconductor chip has been reduced. For this reason, the space for providing the speed control groove described in Patent Document 1 and the protrusion described in Patent Document 2 is reduced, and as a result, the flow of the resin cannot be sufficiently controlled, and a void may be generated in the resin. was there.

According to the present invention, preparing a mounting substrate having a plurality of partition regions partitioned from each other by a dicing line, and mounting a semiconductor chip in at least one partition region;
Filling the resin between the semiconductor chip and the mounting substrate;
With
The partition area on which the semiconductor chip is mounted has a first groove having one end positioned below the semiconductor chip and the other end positioned in the dicing line,
The first groove does not straddle a straight line passing through the center of the semiconductor chip and parallel to the side of the semiconductor chip where the first groove intersects,
In the step of filling the resin, a method of manufacturing a semiconductor device is provided in which the resin penetrates in a direction intersecting the first groove.

According to the present invention, a mounting substrate;
A semiconductor chip mounted on the main surface of the mounting substrate;
A resin filled between the mounting substrate and the semiconductor chip;
A groove provided on the main surface of the mounting substrate, one end located below the semiconductor chip and the other end located in the dicing line;
With
The first groove does not straddle a straight line passing through the center of the semiconductor chip and parallel to the side of the semiconductor chip where the first groove intersects,
A semiconductor device in which the first groove is filled with the resin is provided.

According to the present invention, a plurality of partitioned regions that are partitioned from each other by dicing lines and each has a semiconductor chip mounted thereon,
A first groove provided in each of the plurality of partition regions, having one end positioned below the semiconductor chip and the other end positioned in the dicing line;
A second groove provided in the dicing line and connected to the first groove;
A mounting substrate is provided in which the first groove is parallel to a side where the first groove of the sides of the semiconductor chip intersects and does not straddle a straight line passing through the center of the semiconductor chip.

  According to the present invention, the resin that has permeated the peripheral portion of the semiconductor chip is filled in the first groove and discharged outside the semiconductor chip. During this time, the penetration of the resin in the peripheral portion is temporarily interrupted, and the penetration of the resin in the central portion of the semiconductor chip proceeds. This interruption period is long because the other end of the first groove is located on the dicing line. Further, the first groove is not parallel to the side of the four sides of the semiconductor chip where the first groove intersects and does not straddle the line passing through the center of the semiconductor chip, so that the resin may wrap around the first groove. It is suppressed. Therefore, generation of voids in the resin is suppressed.

  According to the present invention, generation of voids in the resin is suppressed.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

  FIG. 1 is an enlarged plan view of a mounting substrate 100 used in the method for manufacturing a semiconductor device in the present embodiment, and FIG. 2 is a schematic plan view of the mounting substrate. A part of the configuration shown in FIG. 1 is omitted in FIG.

  The mounting substrate 100 has a plurality of partition regions 200 partitioned from each other by dicing lines 110. The semiconductor device manufacturing method according to the present embodiment includes a step of mounting the semiconductor chip 300 in at least one partition region 200 and a step of filling the resin 400 between the semiconductor chip 300 and the mounting substrate 100. In the step of filling the resin 400, the resin 400 penetrates in the direction intersecting with the first groove 210, but the penetration speed is faster in the peripheral part of the semiconductor chip 300 than in the central part.

  The partition region 200 has a first groove 210. One end of the first groove 210 is located below the semiconductor chip 300, and the other end is located on the dicing line 110. For this reason, the resin 400 that has permeated the periphery of the semiconductor chip 300 is filled in the first groove 210 and discharged outside the semiconductor chip 300. During this time, the penetration of the resin 400 in the peripheral portion is temporarily interrupted, and the penetration of the resin 400 in the central portion of the semiconductor chip 300 proceeds. This interruption period is long because the other end of the first groove 210 is positioned on the dicing line 110.

  Further, since the first groove 210 does not straddle the straight line S passing through the center of the semiconductor chip 300 and parallel to the sides 302 and 304 where the first groove 210 intersects among the four sides of the semiconductor chip 300, the resin 400 is used as the first groove 210. It is possible to suppress wraparound along one groove 210.

  Therefore, the resin 400 is prevented from flowing around the peripheral portion of the semiconductor chip 300, and as a result, the occurrence of voids in the resin 400 is suppressed. Details will be described below.

  As shown in FIG. 1, the semiconductor chip 300 is a quadrangle such as a square or a rectangle. The first groove 210 is provided corresponding to each of the two sides 302 and 304 facing each other among the four sides 302, 304, 306, and 308 of the semiconductor chip 300. The first groove 210 is provided so as to straddle the sides 302 and 304. The first groove 210 straddling the side 302 and the first groove 210 straddling the side 304 are provided symmetrically with respect to the straight line S, and are not connected to each other. In the figure, one first groove 210 is provided below each of the sides 302 and 304, but a plurality of first grooves 210 may be provided below each side. The position where the first groove 210 straddles the sides 302 and 304 is closer to the side 308 than the center of the sides 302 and 304, for example.

  When the semiconductor chip 300 is provided with a plurality of bumps 320 along the sides 302 and 304, one end of the first groove 210 is preferably located inside the semiconductor chip 300 from the bumps 320. In this case, the first groove 210 extends between the bump 320 and the bump 320.

  The mounting substrate 100 has a second groove 112. The second groove 112 is provided in the dicing line 110 and is connected to the other end of the first groove 210. The 2nd groove | channel 112 may be provided in the shape which is not mutually connected for every division area | region 200. FIG. Specifically, as shown in FIG. 9, in the partition region 200 sharing the dicing line 110, the length of the second groove 112 is less than half of one side of the partition region 200, and the two second grooves 112 are formed. May be arranged in the extending direction of the dicing line 110. Further, as shown in FIG. 10, two second grooves 112 may be arranged in the dicing line 110 in a direction perpendicular to the dicing line 110. In this case, it is preferable to make the dicing line 110 thick or to provide the dicing line 110 for each of the second grooves 112.

  3 is a cross-sectional view taken along the line AA ′ of FIG. The mounting substrate 100 is, for example, a multilayer substrate having multiple wiring layers. The wiring layer provided on the surface layer of the mounting substrate 100 is covered with a solder resist layer 120. A part of the solder resist layer 120 is removed in order to expose a part of the surface wiring layer as a land. This removal is performed by exposure and development.

  The first groove 210 and the second groove 112 are formed by removing the solder resist layer 120. The first groove 210 and the second groove 112 are formed in the same process as the land, for example, but may be removed by etching after the land is formed.

  A solder ball 230 is provided on the back surface of the mounting substrate 100. The solder ball 230 is connected to any wiring of the mounting substrate 100.

  Each drawing in FIG. 4 is a plan view for explaining the details of the method of manufacturing the semiconductor device. First, as shown in FIG. 4A, the semiconductor chip 300 is mounted on the partition region 200 of the mounting substrate 100. At this time, the bump of the semiconductor chip 300 and the land of the mounting substrate 100 are connected. Next, the resin 400 is penetrated from the side 306 of the semiconductor chip 300 into the space between the semiconductor chip 300 and the mounting substrate 100. The penetration speed of the resin 400 in the peripheral part of the semiconductor chip 300 is faster than the penetration speed of the resin 400 in the central part of the semiconductor chip 300.

  Then, as shown in FIG. 4B, the resin 400 that has permeated along the periphery of the semiconductor chip 300 reaches the first groove 210. Then, the resin 400 that has permeated along the periphery of the semiconductor chip 300 flows into the first groove 210 and the second groove 112 and temporarily does not advance further. During this time, the resin 400 continues to penetrate the central portion of the semiconductor chip 300. As a result, the resin 400 that has permeated the central portion of the semiconductor chip 300 precedes the resin 400 that has permeated along the peripheral portion of the semiconductor chip 300.

  Then, as shown in FIG. 4C, the resin 400 fills the entire space between the mounting substrate 100 and the semiconductor chip 300 with the resin 400. As described above, by providing the first groove 210 and the second groove 112, the resin 400 that has permeated the central portion of the semiconductor chip 300 has permeated along the peripheral portion of the semiconductor chip 300. More ahead. For this reason, generation of voids in the resin 400 can be suppressed. In this state, the first groove 210 and the second groove 112 are filled with the resin 400.

  Thereafter, as shown in FIG. 4D, the mounting substrate 100 is divided along the dicing line 110. Thereby, the mounting substrate 100 is divided into the partitioned areas 200. In this step, the resin 400 filled in the first groove 210 and the second groove 112 may be removed or may remain. The first groove 210 is opened at the end face of the mounting substrate 100. In this way, a semiconductor package in which the semiconductor chip 300 is mounted on the mounting substrate 100 is manufactured.

  As described above, according to the present embodiment, the resin 400 that has permeated the peripheral portion of the semiconductor chip 300 is temporarily blocked because it fills the first groove 210. Further, since the other end of the first groove 210 is positioned on the dicing line 110, the first groove 210 has a long anti-rescue effect on the resin 400. Accordingly, the resin 400 is prevented from flowing around the peripheral portion of the semiconductor chip 300, and as a result, the generation of voids in the resin 400 filled between the semiconductor chip 300 and the mounting substrate 100 is suppressed.

  In addition, since the other end of the first groove 210 is connected to the second groove 112 provided in the dicing line 110, the resin 400 that has flowed into the first groove 210 also flows into the second groove 112. To be filled. Therefore, the effect of preventing the resin 400 by the first groove 210 is further prolonged.

  FIG. 5 is a plan view for explaining the method for manufacturing the semiconductor device according to the second embodiment. The manufacturing method of the semiconductor device according to this embodiment is different from that of the first embodiment in the following points. The first groove 210 of the mounting substrate 100 is provided on each of the two sides 302 and 308 forming one corner of the four sides of the semiconductor chip 300 so as to straddle the side. The position of the second groove 112 is moved in accordance with the position of the first groove 210. In the step of filling the resin 400, the resin 400 is permeated from the two sides 304 and 306 other than the two sides 302 and 308 of the semiconductor chip 300. Except for these, the semiconductor device manufacturing method is the same as that of the first embodiment. The position where the first groove 210 straddles the sides 302 and 308 is closer to the corner 310 formed by the sides 302 and 308 than the central portion of the sides 302 and 308, for example.

  Also according to this embodiment, the resin 400 penetrates in the direction intersecting with the first groove 210, so that the same effect as that of the first embodiment can be obtained.

  FIG. 6 is a plan view for explaining the method for manufacturing the semiconductor device according to the third embodiment. The manufacturing method of the semiconductor device according to the present embodiment is the same as the manufacturing method of the semiconductor device according to the second embodiment, except that the resin 400 penetrates from the sides 302 and 308 in the step of filling the resin 400. It is.

  The position where the first groove 210 straddles the sides 302 and 308 is closer to the corner opposite to the corner 310 than the center of the sides 302 and 308, for example. Also according to this embodiment, the resin 400 penetrates in the direction intersecting with the first groove 210, so that the same effect as that of the first embodiment can be obtained. In this embodiment, in the step of filling the resin 400, the resin 400 may be penetrated from the corner 310 formed by the sides 302 and 308.

  FIG. 7 is a cross-sectional view for explaining the semiconductor device according to the fourth embodiment, and FIG. 8 is a plan view of the mounting substrate 100 in the semiconductor device shown in FIG. This semiconductor device is the first to third embodiments except that the mounting substrate 100 includes lands 220 and the mounting component 500 is stacked on the semiconductor package shown in the first embodiment. It is the same. In FIG. 8, the mounting component 500 is omitted.

  A plurality of lands 220 are formed on the same surface as the first groove 210, and are located in a region not overlapping the semiconductor chip 300. The first groove 210 does not overlap the land 220.

  The mounting component 500 is, for example, a semiconductor package, in which a semiconductor chip 520 is mounted on a mounting substrate 510 and the semiconductor chip 520 and the mounting substrate 510 are connected by a wire 540. The semiconductor chip 520 and the wire 540 are sealed with a mold resin 530. A solder ball 550 is provided on the lower surface of the mounting substrate 510. The solder ball 550 is connected to the land 220 of the mounting substrate 100.

  Also according to this embodiment, the same effect as that of the first embodiment can be obtained. Since the land 220 is not overlapped with the first groove 210, the mounting component 500 can be laminated on the semiconductor package shown in the first or second embodiment. In the present embodiment, the configuration in which one mounting component 500 is stacked on the semiconductor package shown in the first embodiment is illustrated, but a configuration in which a plurality of mounting components 500 are stacked may be employed.

  As mentioned above, although embodiment of this invention was described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

It is a plane enlarged view of the mounting substrate used for the manufacturing method of the semiconductor device in a 1st embodiment. It is a plane schematic diagram of a mounting substrate. It is AA 'sectional drawing of FIG. Each drawing is a plan view for explaining the details of the manufacturing method of the semiconductor device. It is a top view for demonstrating the manufacturing method of the semiconductor device concerning 2nd Embodiment. It is a top view for demonstrating the manufacturing method of the semiconductor device concerning 3rd Embodiment. It is sectional drawing for demonstrating the semiconductor device concerning 4th Embodiment. It is a top view for demonstrating the semiconductor device concerning 4th Embodiment. It is a top view for demonstrating the modification of the semiconductor device concerning 1st Embodiment. It is a top view for demonstrating the modification of the semiconductor device concerning 1st Embodiment.

Explanation of symbols

100 mounting substrate 110 dicing line 120 solder resist layer 112 second groove 200 partition region 210 first groove 220 land 230 solder ball 300 semiconductor chip 302 side 304 side 306 side 308 side 310 corner 320 bump 400 resin 500 mounting component 510 mounting Substrate 520 Semiconductor chip 530 Mold resin 540 Wire 550 Solder ball

Claims (7)

Preparing a mounting substrate having a plurality of partitioned areas partitioned from each other by a dicing line, and mounting a semiconductor chip in at least one of the partitioned areas;
Filling the resin between the semiconductor chip and the mounting substrate;
With
The partition area on which the semiconductor chip is mounted has a first groove having one end positioned below the semiconductor chip and the other end positioned in the dicing line,
The first groove does not straddle a straight line passing through the center of the semiconductor chip and parallel to the side of the semiconductor chip where the first groove intersects,
In the step of filling the resin, the resin penetrates in a direction intersecting the first groove ,
The mounting substrate is provided in the dicing line, and a method for manufacturing a semiconductor device including a second groove connected to the first groove . In the manufacturing method of the semiconductor device according to claim 1 ,
The semiconductor chip is square,
The first groove is provided on each of two opposite sides of the four sides of the semiconductor chip so as to straddle the side.
A method of manufacturing a semiconductor device, wherein, in the step of filling the resin, the resin penetrates from sides other than the two sides of the semiconductor chip. In the manufacturing method of the semiconductor device according to claim 1 ,
The semiconductor chip is square,
The first groove is provided on each of two sides forming one corner of the four sides of the semiconductor chip so as to straddle the side.
A method of manufacturing a semiconductor device, wherein, in the step of filling the resin, the resin penetrates from two sides other than the two sides of the semiconductor chip. In the manufacturing method of the semiconductor device according to claim 1 ,
The semiconductor chip is square,
The first groove is provided on each of two sides forming one corner of the four sides of the semiconductor chip so as to straddle the side.
A method of manufacturing a semiconductor device, wherein, in the step of filling the resin, the resin penetrates from the one corner of the semiconductor chip. A plurality of partitioned regions that are partitioned from each other by a dicing line and each has a semiconductor chip mounted thereon;
A first groove provided in each of the plurality of partition regions, having one end positioned below the semiconductor chip and the other end positioned in the dicing line;
A second groove provided in the dicing line and connected to the first groove;
The first groove is a mounting substrate that is parallel to a side where the first groove intersects among the sides of the semiconductor chip and does not straddle a straight line passing through the center of the semiconductor chip. The mounting board according to claim 5 ,
The semiconductor chip is square,
The first groove is a mounting substrate provided on each of two opposite sides of the four sides of the semiconductor chip so as to straddle the sides. The mounting board according to claim 5 ,
The semiconductor chip is square,
The first groove is a mounting substrate provided on each of two sides forming one corner of the four sides of the semiconductor chip so as to straddle the side.

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