JP5285495B2 - Manufacturing method of crystal unit - Google Patents

Description

  The present invention relates to a method for manufacturing a crystal resonator used in an electronic device.

  In recent years, with the miniaturization of crystal resonators, it has become difficult to process and manufacture crystal resonator elements mounted on the crystal resonators into individual pieces. For this reason, as a method for manufacturing such a miniaturized crystal resonator, for example, a manufacturing method for forming a crystal resonator element in a wafer state and manufacturing the crystal resonator while maintaining this state has been proposed. (For example, refer to Patent Document 1).

  First, a crystal resonator manufactured by a manufacturing method as shown in Patent Document 1 will be described. Such a crystal resonator is mainly composed of, for example, a crystal substrate, a first container body, and a second container body. In addition, such a crystal resonator has a first electrode provided on one main surface of the crystal substrate sealed with a first container body, and a first electrode provided on the other main surface of the crystal substrate. The second electrode is sealed with the second container body. Here, the quartz substrate is mainly composed of a vibration part and a frame part connected to the end of the vibration part, and the first electrode and the second electrode are provided in the vibration part.

  Next, a description will be given of a manufacturing method in which a crystal resonator element is formed in a wafer state and a crystal resonator is manufactured while maintaining this state. Such a crystal resonator manufacturing method mainly includes, for example, a crystal wafer forming process, an electrode forming process, a first bonding process, a second bonding process, and a singulation process.

  The crystal wafer forming step is a step of forming a portion to be a plurality of crystal substrates so as to be arranged in a matrix on the crystal wafer by using a photolithography technique and an etching technique.

In the electrode forming step, the first electrode, two pairs of connection terminals and the first wiring pattern are provided on one main surface of the quartz substrate by sputtering or the like, and the other main surface of the quartz substrate is provided. A second electrode and a second wiring pattern are provided.
The first wiring pattern is provided so as to connect the first electrode and the predetermined one connection terminal, and the second wiring pattern connects the second electrode and the predetermined other one connection terminal. Is provided.

The first bonding step includes a first wafer on which a plurality of first container bodies are arranged in a matrix and one main surface of a quartz wafer on which a plurality of quartz substrate parts are provided. Is a step of bonding.
A pair of tower terminals are provided on one main surface of the portion serving as the first container body, and a plurality of external connection terminals are provided on the other main surface. Each predetermined mounting terminal and each predetermined external connection terminal are electrically connected via the container body internal wiring provided in the first container body.
By joining the crystal wafer and the first wafer, the connection terminal provided in the portion serving as the crystal substrate and the tower terminal provided in the portion serving as the first container body are connected.

  The second bonding step includes a second wafer in which portions to be a plurality of second container bodies are arranged in a matrix and the other main surface of the crystal wafer in which portions to be a plurality of crystal substrates are provided. Is a step of bonding.

  The singulation process is a process of cutting the gaps between the recesses provided in the crystal wafer using dicing or the like to divide each crystal resonator into individual pieces.

  Further, in order to avoid the deterioration of crystal impedance and the Q value in response to the recent miniaturization of crystal resonators, for example, the crystal vibration of a structure having a curved convex portion on one main surface of the vibration portion A child has been proposed (see, for example, Patent Document 2).

  Here, a crystal wafer forming step including a step of forming a curved convex portion on one main surface of the vibrating portion will be described. The crystal wafer forming process mainly includes a frame part forming process and a vibrating part forming process.

  The frame portion forming step is a step of forming portions to be a plurality of frame portions by forming a plurality of concave portions on one main surface of the crystal wafer using a photolithography technique and an etching technique.

The vibration part forming process includes, for example, a cover forming process, an etching process, and a resist removing process.
The cover forming step is a step of forming a cover having a curved convex portion on one main surface of the crystal wafer. This cover forming method includes, for example, a resist coating process, an exposure process, and a development process.
In the resist coating process, a resist to be etched in the same state as the crystal is applied to one main surface of the wafer made of flat crystal.
In the exposure process, an electromagnetic wave whose exposure intensity is changed by a lens and / or a filter is irradiated from the center position of the vibration part toward the position where the edge of the vibration part is formed, and depending on the presence or absence of photosensitivity in the resist film This is a step of forming a convex exposure region.
The development process is a process of developing the exposed resist.
In the etching process, the quartz wafer on which the cover is formed is dry-etched. Since the cover has the same etching rate as that of quartz, the etched quartz wafer has a shape in which the shape of the cover is transferred.
The cover removing step is a step of removing the remaining resist.
Here, the vibration portion is formed between the curved convex portion and the main surface in the concave portion facing the convex portion.

Further, a method of forming a cover having a curved convex portion on one main surface of a crystal wafer is applied to one main surface of the crystal wafer by using, for example, a density distribution mask in an exposure process. For example, there is a method of exposing a resist.
Here, the concentration distribution mask mainly includes, for example, a glass flat plate and a plurality of chromium layers. The glass flat plate is made of a material that transmits light and has a flat plate shape. The plurality of chromium layers are provided on one main surface of the glass flat plate. In addition, the chrome layer may have different shapes and sizes, for example.
When the chromium layer has a size smaller than the resolution of the exposure apparatus or the resolution of the resist to be used, the resist exposed using the density distribution mask has a convex shape in a curved shape that continuously changes. In other words, a cover having the same shape as the vibrating portion of the crystal resonator can be formed by exposing the resist using the density distribution mask in the exposure process (see, for example, Patent Document 3).

JP 2006-148758 A Japanese Patent Laying-Open No. 2005-244677 JP 2009-31399 A

  However, the conventional method for manufacturing a crystal unit is to irradiate the resist with an electromagnetic wave whose exposure intensity has been changed by a lens and / or a filter to form a cover having the same shape as the vibrating part of the crystal unit and perform etching. Yes. Therefore, it takes time and labor to adjust the lens and / or the filter in order to form a curved cover having a convex shape, so that the manufacturing method of the conventional crystal unit may increase the manufacturing cost. There is.

  Since the conventional method for manufacturing a crystal resonator using a concentration distribution mask requires time and labor to align the fine pattern of the concentration distribution mask with the portion to be a quartz substrate, the conventional manufacturing method using the concentration distribution mask May increase manufacturing costs.

  Accordingly, an object of the present invention is to easily manufacture a crystal resonator in which the vibration part has a curved convex shape, and to reduce the manufacturing cost of the crystal resonator.

  In order to solve the above-described problem, a quartz substrate recess forming step in which a plurality of crystal substrate recesses are provided in a matrix on one main surface of a crystal wafer, and substrate internal wiring is provided in the thickness direction in the vicinity of the crystal substrate recess, A cover for providing a cover made of a plurality of protective films by applying a plurality of annular resists having the same center to each other on the other main surface of the crystal wafer and serving as the crystal substrate using an ink jet method A forming step, a convex processing step of processing the other main surface of the quartz wafer provided with the cover, and a first electrode, a second electrode, and a first wiring on a portion of the quartz wafer that becomes a quartz substrate. An electrode forming step for providing a pattern, a second wiring pattern, and a connection terminal; a first wafer on which a plurality of first container bodies are provided; and the crystal wafer. A first bonding step of bonding a concave portion toward the first wafer side; a second wafer having a plurality of container body concave portions provided on one main surface; and the crystal wafer. A second bonding step of bonding toward the quartz wafer side, and a singulation step of cutting between the quartz substrate recesses of the quartz wafer to separate each crystal resonator. And

In such a method of manufacturing a crystal resonator, a plurality of annular resists having the same center are applied to a quartz crystal made of an anisotropic material by using an inkjet method, and cured to form a cover made of a plurality of protective films. Etching is performed.
In other words, since the etching speed of quartz, which is an anisotropic material, varies depending on the direction of the crystal axis, by providing a plurality of protective films with the same center on the quartz, a pseudo curved surface is formed on the vibrating part of the crystal unit after etching. A convex portion having a shape can be easily provided.
Therefore, such a method of manufacturing a crystal unit includes a labor for irradiating the resist with an electromagnetic wave whose exposure intensity is changed by a lens and / or a filter to form a cover having the same shape as the vibrating unit of the crystal unit. Since the time can be saved, the manufacturing cost can be reduced.

  Further, in such a method for manufacturing a crystal resonator, a resist can be directly applied to a crystal wafer by using an ink jet method, so that the crystal resonator can be manufactured without using a concentration distribution mask. In other words, such a method for manufacturing a crystal resonator eliminates the time and labor required for aligning the position of the concentration distribution mask and the portion serving as the crystal substrate, thereby reducing the manufacturing cost.

1 is a cross-sectional view of a crystal resonator manufactured by a method for manufacturing a crystal resonator according to a first embodiment of the present invention. It is a conceptual diagram which shows an example of the state of the crystal wafer after a crystal substrate recessed part formation process. It is a conceptual diagram which shows an example of the state of the crystal wafer after a cover formation process. It is a conceptual diagram which shows an example of the state of the cross section of the crystal wafer after a cover formation process. It is a conceptual diagram which shows an example of the state of the cross section of the quartz wafer after a convex process. It is a conceptual diagram which shows an example of the state of the crystal wafer after an electrode formation process. It is a conceptual diagram which shows an example of the state of the cross section of the crystal wafer after an electrode formation process. It is a conceptual diagram which shows an example of the crystal wafer state before a 1st joining process. It is a conceptual diagram which shows an example of the state of the 1st wafer before a 1st joining process. It is a conceptual diagram which shows an example of the state of the cross section of the crystal wafer after a 1st joining process and a 1st wafer. It is a conceptual diagram which shows an example of the state of the 2nd wafer before a 2nd joining process. It is a conceptual diagram which shows an example of the state of the cross section of the crystal wafer after a 2nd joining process, a 2nd wafer, and a 1st wafer. It is a conceptual diagram which shows the state after an individualization process. It is sectional drawing of the crystal oscillator manufactured with the manufacturing method of the crystal oscillator which concerns on 2nd embodiment of this invention.

  Next, the form for implementing this invention is demonstrated. In each drawing, the state of each component is exaggerated for easy understanding.

(First embodiment)
A method for manufacturing a crystal resonator according to the first embodiment of the present invention will be described.
First, the crystal resonator 100 manufactured by the crystal resonator manufacturing method according to the first embodiment of the present invention will be described.

As shown in FIG. 1, a crystal resonator 100 manufactured by the method for manufacturing a crystal resonator according to the first embodiment of the present invention includes a crystal substrate 10a, a first container body 20a, and a second container body 30a. And is composed mainly of. The crystal unit 100 has a structure in which a crystal substrate 10a is sandwiched between a first container body 20a and a second container body 30a. Further, in this crystal resonator 100, the first electrode 13a provided on the crystal substrate 10a is sealed with the crystal substrate 10a and the first container body 20a, and is provided on the crystal substrate 10a. The second electrode 14a is sealed with the quartz substrate 10a and the second container body 30a.
Here, in this crystal resonator 100, for example, one main surface of the crystal substrate 10a and the first container body 20a are joined by anodic bonding, and the other main surface of the crystal substrate 10a and the second container body 30a are joined. Are joined by anodic bonding.

The quartz substrate 10a is, for example, a rectangular flat plate as shown in FIGS. 1 and 6, with a quartz substrate recess 11a provided on one main surface, and a curved convex shape on the other main surface. A portion 12a is provided. The quartz substrate 10a is provided with a substrate through hole (not shown) in the thickness direction of the quartz substrate 10a and in the vicinity of the quartz substrate recess 11a.
The quartz substrate 10a is provided with a first electrode 13a, a first wiring pattern 17a, two pairs of connection terminals S, and a first bonding metal layer 15a on one main surface side, and the other main surface. On the side, a second electrode 14a, a second wiring pattern 18a, and a second bonding metal layer 16a are provided. Further, the quartz substrate 10a is provided with a substrate internal wiring NS inside the substrate through hole.

The quartz substrate recess 11a is provided on one main surface of the quartz substrate 10a.
The convex portion 12a having a curved surface is located at a position facing the quartz substrate recess 11a, and is located on the other main surface of the quartz substrate 10a so that the position of the maximum height coincides with the center of the bottom surface of the quartz substrate recess 11a. Is provided.

The first electrode 13a is provided on the bottom surface of the quartz substrate recess 11a.
The second electrode 14a is a position facing the first electrode 13a and is provided on the other main surface of the quartz crystal substrate 10a.
The substrate internal wiring NS is formed by embedding a metal or conductive paste in a substrate through hole provided in the vicinity of the quartz substrate recess 11a. Here, the vicinity is one main surface of the quartz substrate 10a where the quartz substrate recess 11a is not provided, and is the edge of the quartz substrate 10a.
For example, two connection terminals S are provided side by side on one short side of one main surface of the quartz substrate 10a. Further, the connection terminal S is provided at a position where one predetermined connection terminal S is connected to a first wiring pattern 17a, which will be described later, and one other predetermined connection terminal S is connected to the substrate internal wiring NS described above. It has been.

The first wiring pattern 17a is provided along the surface in the quartz substrate recess 11a and one main surface of the quartz substrate 10a so as to be connected to the first electrode 13a and one predetermined connection terminal S. ing. Therefore, the first electrode 13a and the predetermined one connection terminal S are electrically connected.
The second wiring pattern 18a is provided on the other main surface of the quartz substrate 10a so as to be connected to the second electrode 14a and the substrate internal wiring NS. Therefore, the second electrode 14a and the predetermined other connection terminal S are electrically connected.

As shown in FIG. 8, the first bonding metal layer 15a is an edge of one main surface of the quartz substrate 10a and is provided in an annular shape so as not to contact the connection terminal S and the first wiring pattern 17a. It has been. The first bonding metal layer 15a is bonded to the first electrode sealing metal layer 21a provided on the first container body 20a described later by anodic bonding.
The second bonding metal layer 16a is an edge of the other main surface of the quartz crystal substrate 10a and opposes one main surface provided with a container body recess 32a of the container second body 30a described later. An annular position is provided at the position. The second bonding metal layer 16a is provided so as not to contact the second electrode 14a and the second wiring pattern 18a. The second bonding metal layer 16a is bonded to the second electrode sealing metal layer 31a provided in the second container body 30a described later by anodic bonding.

The first container body 20a is, for example, a rectangular flat plate as shown in FIGS. The first container body 20a has the same main surface as the main surface of the quartz substrate 10a. The first container body 20a is provided with a plurality of container body through holes (not shown).
The first container body 20a is provided with a first electrode sealing metal layer 21a and two pairs of tower terminals P on one main surface, and a plurality of external connection terminals G on the other main surface. Is provided. In the first container body 20a, the container body internal wiring NY1 is provided in the container through hole.

For example, four container body through holes are provided in the four corners of the first container body 20a in the thickness direction of the first container body 20a.
The container body internal wiring NY1 is formed by embedding a metal or conductive paste in the container body through hole.
For example, two tower terminals P are provided side by side on the short side of one main surface of the first container body 20a. Further, the tower terminal P is provided at a position facing the connection terminal S provided on the quartz substrate 10a, and at a position where each predetermined tower terminal P is connected to each predetermined container body internal wiring NY1. ing.
For example, four external connection terminals G are provided at four corners of the first container body 20a. The external connection terminals G are provided at positions where each predetermined external connection terminal G is connected to each predetermined container body internal wiring NY1.
Therefore, the predetermined one connection terminal S and the predetermined one external connection terminal G are electrically connected by the predetermined one container body internal wiring NY1, and similarly, the predetermined one other connection terminal S. And one other predetermined external connection terminal G are electrically connected.

The first electrode sealing metal layer 21a is an edge of one main surface of the first container body 20a, and is a tower terminal at a position facing the first bonding metal layer 15a of the quartz substrate 10a. It is provided in an annular shape so as not to contact P.
The first electrode sealing metal layer 21a is bonded to the first bonding metal layer 15a by anodic bonding, and the first container body 20a and the quartz substrate 10a are bonded to each other. Accordingly, since the quartz substrate 10a is joined to the first container body 20a with the quartz substrate recess 11a facing the first container body 20a, the first substrate provided on the bottom surface of the quartz substrate recess 11a. The electrode 13a is sealed.

  Further, by joining the crystal substrate 10a and the first container body 20a, each predetermined connection terminal S and each predetermined tower terminal P are brought into contact and electrically connected. Therefore, by joining the crystal substrate 10a and the first container body 20a, the first electrode 13a and the predetermined one external connection terminal G are electrically connected, and the second electrode 14a A predetermined other external connection terminal G is electrically connected.

  For example, as shown in FIGS. 1 and 11, the second container body 30 a is a rectangular flat plate. Moreover, the size of the main surface of the second container body 30a is the same as the size of the main surface of the crystal substrate 10a. Further, the second container body 30a is provided with a container body recess 32a and a second bonding metal layer 31a on one main surface.

The container recess 32a has a size that does not contact the curved convex portion 12a, the second electrode 14a, and the second wiring pattern 18a provided in the quartz substrate 10a.
The second electrode sealing metal layer 31a is an edge of one main surface of the second container body 30a, and is opposed to the second bonding metal layer 16a provided on the quartz substrate 10a. Further, it is provided in an annular shape so as not to contact the second electrode 14a and the second wiring pattern 18a.
The second electrode sealing metal layer 31a is bonded to the second bonding metal layer 16a by anodic bonding, and the second container body 30a and the crystal substrate 10a are bonded. Accordingly, since the second container body 30a is joined with the container body recess 32a facing the quartz substrate 10a, the second electrode 14a is sealed.

Next, a method for manufacturing the crystal unit 100 according to the first embodiment of the present invention will be described.
The manufacturing method of the crystal unit 100 according to the first embodiment of the present invention mainly includes a crystal substrate recess forming step, a cover forming step, a convex processing step, an electrode forming step, a first bonding step, and a second bonding. It consists of a process and an individualization process.

In the quartz substrate recess forming step, as shown in FIG. 2, a plurality of quartz substrate recesses 11a are provided in a matrix on one main surface of the crystal wafer W10a, and the substrate internal wiring NS is provided in the vicinity of the quartz crystal substrate recess 11a. It is a step of providing in the thickness direction. This crystal substrate recess forming step includes a recess forming step and a substrate internal wiring forming step.
The recess forming step is a step of providing a crystal substrate recess 11a and a substrate through hole (not shown) in a portion of the flat crystal wafer W10a that becomes the crystal substrate 10a. In addition, although the case where the quartz substrate recessed part 11a and a substrate through-hole are provided simultaneously is demonstrated, you may provide each separately.
The quartz substrate recess 11a is formed in a portion that becomes the quartz substrate 10a by using a photolithography technique and an etching technique.
The substrate through-hole is formed in the vicinity of the quartz substrate recess 11a, which is a portion that becomes the quartz substrate 10a, using a photolithography technique and an etching technique. Here, the vicinity means an edge portion of a portion to be the quartz substrate 10a and a portion where the quartz substrate recess 11a is not provided. The substrate through-hole is provided, for example, at a predetermined one of the four corners of the portion that becomes the quartz substrate 10a.
The substrate internal wiring formation step is a step of filling the plurality of substrate through holes provided in the crystal wafer W10a with metal, conductive paste or the like to form the substrate internal wiring NS.

In the cover forming step, a plurality of annular resists having the same center are applied to the portion of the other main surface of the quartz wafer that is to be the quartz substrate by using an inkjet method, and cured to form a plurality of protective films. A step of providing a cover comprising:
Here, the inkjet method refers to a method of printing a predetermined shape by ejecting a resist for each particle or droplet as in inkjet printing.

The cover 40a is provided on the other main surface of the crystal wafer W10a at a position facing the bottom surface of the crystal substrate recess 11a. Further, the cover 40a is provided with a curved convex portion 12a provided in a convex processing step, which will be described later, at a position having a predetermined radius of curvature. The cover 40a is composed of a plurality of annular protective films.
The plurality of protective films have the same center and are annular. The intervals between the plurality of protective films are increased toward the edge of the portion that becomes the quartz substrate 10a.

Here, the case where the cover 40a has four protective films as shown in FIGS. 3 and 4, for example, will be described.
The cover 40a includes a first protective film 41a, a second protective film 41b, a third protective film 41c, and a fourth protective film 41d.
The first protective film 41a is provided so that the center thereof is the center of the portion that becomes the quartz substrate 10a. The first protective film 41a is formed by directly applying a resist applied to the quartz wafer W10a using an ink jet method and irradiating it with an electromagnetic wave.
The second protective film 41b is provided in an annular shape so as to surround the first protective film 41a. The second protective film 41b is provided such that the center thereof is the same as the center of the first protective film 41a. That is, here, the second protective film 41b is provided so that the center thereof is the center of the portion that becomes the quartz substrate 10a. The second protective film 41b is formed by curing the resist applied to the crystal wafer W10a directly by applying an electromagnetic wave using an ink jet method.
The third protective film 41c surrounds the second protective film 41b at a position where the distance between the second protective film 41b is wider than the distance between the first protective film 41a and the second protective film 41b. It is provided in an annular shape. The third protective film 41c is provided so that the center thereof is the same as the center of the first protective film 41a. The third protective film 41c is formed by irradiating the resist applied to the quartz crystal wafer W10a directly using an ink jet method and radiating it with an electromagnetic wave.
The fourth protective film 41d surrounds the third protective film 41c at a position where the distance between the third protective film 41c is wider than the distance between the second protective film 41b and the third protective film 41c. It is provided in an annular shape. The fourth protective film 41d is provided such that the center thereof is the same as the center of the first protective film 41a. The fourth protective film 41d is formed by irradiating and curing an electromagnetic wave on a resist directly applied to the crystal wafer W10a using an inkjet method.
That is, the distance between the four protective films toward the edge of the portion that becomes the quartz substrate increases with the adjacent protective film.

Therefore, in the cover forming step, the resist applied by the ink jet method is cured by electromagnetic waves to form a plurality of protective films.
Although a case where a plurality of protective films are formed is described here, a plurality of protective films may be formed at the same time.

The convex processing step is a step of processing the other main surface of the crystal wafer W10a provided with the cover 40a. Here, a case where wet etching is used will be described as an example. In the convex processing step, the pseudo-curved convex portion 12a is formed by using wet etching.
The quartz wafer W10a is mainly made of quartz, which is an anisotropic material having an etching rate that varies depending on the axial direction of the crystal axis.
For this reason, in the quartz wafer W10a, the etching in the thickness direction is stopped depending on the interval between the protective films and the etching time, and the portion protected by the protective film may be etched. Such a phenomenon generally tends to occur when the interval between the protective films is narrow and the etching time is long.

As described above, for example, as shown in FIGS. 3 and 4, the cover 40 a is composed of a plurality of protective films, and the interval between adjacent protective films becomes wider toward the edge of the portion that becomes the quartz substrate 10 a. ing.
That is, the adjacent distance between the first protective film 41a and the second protective film 41b is the adjacent distance between the second protective film 41b and the third protective film 41c or the third protective film 41c and the fourth protective film 41b. It is narrower than the distance between adjacent protective films 41d.
For this reason, between the first protective film 41a and the second protective film 41b, etching in the thickness direction is stopped first, and the first protective film 41a and the second protective film 41b are protected. The part is in an etched state. By increasing the etching time, the same phenomenon occurs between the second protective film 41b and the third protective film 41c and between the third protective film 41c and the fourth protective film 41d.
For this reason, in the vicinity of the center of the portion to be the quartz substrate 10a provided with the first protective layer 41a, the portion protected by the protective film without being etched much in the thickness direction is etched, and the fourth protective layer The edge side of the portion to be the quartz crystal substrate 10a provided with 41d is etched in the thickness direction.
That is, the principal surface provided with the cover 40a of the portion that becomes the quartz substrate 10a has a pseudo-curved convex shape in which the vicinity of the center is not etched much in the thickness direction and the vicinity of the edge is etched in the thickness direction. Become.

As shown in FIGS. 1 and 6, the electrode forming step includes a first electrode 13a, a second electrode 14a, a first wiring pattern 17a, and a second wiring on the portion of the crystal wafer W10a that becomes the crystal substrate 10a. This is a step of providing the pattern 18a and the connection terminal S.
The first electrode 13a is formed by sputtering or the like on the bottom surface of the quartz substrate recess 11a in the portion that becomes the quartz substrate 10a of the quartz wafer W10a.
The second electrode 14a is formed on the other main surface of the portion of the quartz wafer W10a that becomes the quartz substrate 10a at a position facing the first electrode 13a by sputtering or the like.
Two connection terminals S are formed by sputtering or the like. For example, two connection terminals S are formed side by side on one short side of one main surface of a portion to be the quartz substrate 10a. The connection terminal S is a position where one other predetermined connection terminal S is connected to a first wiring pattern 17a, which will be described later, and the other predetermined one connection terminal S is connected to the above-described substrate internal wiring NS. Provided.
The first wiring pattern 17a is connected to the first electrode 13a and one predetermined connection terminal S by sputtering or the like, and is one of the surface in the quartz substrate recess 11a and the portion that becomes the quartz substrate 10a. It is formed along the main surface. Therefore, the first electrode 13a and the predetermined one connection terminal S are electrically connected.
The second wiring pattern 18a is formed on the other main surface of the quartz substrate 10a so as to be connected to the second electrode 14a and the substrate internal wiring NS by sputtering or the like. Accordingly, the second electrode 14a is electrically connected to the other predetermined connection terminal S.

  In the first bonding step, one main portion of the first wafer W10a in which portions to be the plurality of first container bodies 20a are arranged in a matrix and the quartz wafer W10a in which the quartz substrate recess 11a is provided. It is a process of joining the surfaces. Here, the crystal wafer 10a and the first wafer W20a are bonded by, for example, anodic bonding.

Since the quartz wafer W10a is bonded to the first wafer W20a by anodic bonding, the first bonding metal layer 15a is provided on one main surface to be bonded.
The first bonding metal layer 15a is formed using, for example, sputtering. The first bonding metal layer 15a is provided on the edge portion of one main surface of the portion that becomes the quartz substrate 10a and on the portion that becomes the first container body 20a of the first wafer W20a described later. Further, it is formed in an annular shape so as not to contact the connection terminal S and the first wiring pattern 17a at a position facing the first electrode sealing metal layer 21a.

  In the first wafer W20a, portions to be a plurality of first container bodies 20a are arranged in a matrix. In addition, the arrangement position of the part used as the 1st container body 20a of the 1st wafer W20a respond | corresponds to the arrangement position of the part used as the quartz substrate 10a of the quartz wafer 10a.

The portion that becomes the first container body 20a has, for example, a rectangular shape, and the main surface thereof is the same size as the main surface of the portion that becomes the crystal substrate 10a. Moreover, the part used as the 1st container body 20a is provided with the several container body through-hole (not shown).
The portion to be the first container body 20a is provided with the first electrode sealing metal layer 21a and two pairs of tower terminals P on one main surface, and a plurality of on the other main surface. An external connection terminal G is provided. Moreover, the part used as the 1st container body 20a is provided with the some container internal wiring NY1.

For example, four container body through-holes are provided in the thickness direction of the first wafer W20a at four corners of the portion to be the first container body 20a.
The container body internal wiring NY1 is formed by embedding a metal or conductive paste in the container body through hole.
For example, two tower terminals P are provided side by side on the short side of one main surface of the portion to be the first container body 20a. Moreover, the tower terminal P is a position facing the connection terminal S provided in the portion that becomes the crystal substrate 10a, and a position at which each predetermined tower terminal P is connected to each predetermined container body internal wire NY1. Is provided.
For example, four external connection terminals G are provided at four corners of the portion that becomes the first container body 20a. The external connection terminals G are provided at positions where each predetermined external connection terminal G is connected to each predetermined container body internal wiring NY1.
The first electrode sealing metal layer 21a is an edge of one main surface of the portion that becomes the first container body 20a, and faces the first bonding metal layer 15a of the portion that becomes the crystal substrate 10a. It is provided in an annular shape so that it does not come into contact with the tower terminal P.
The first electrode sealing metal layer 21a is bonded to the first bonding metal layer 15a by anodic bonding, and the first wafer W20a provided with portions to be the plurality of first container bodies 20a is provided. A quartz wafer W10a provided with a portion to be a plurality of quartz substrates 10a is bonded.

  The first electrode sealing metal layer 21a provided in the portion to be the first container body 20a and the first bonding metal layer 15a formed in the portion to be the quartz substrate 10a are joined by anodic bonding. Thus, the first wafer W20a and the crystal wafer W10a are bonded. Accordingly, the plurality of crystal substrate recesses 11a formed on the crystal wafer W10a are overlapped and bonded toward the one main surface side of the first wafer W20a, so that the crystal substrate 10a is formed in a portion to be the crystal substrate 10a. Thus, the first electrode 13a is sealed.

Further, the first wafer W20a and the quartz wafer W10a are bonded to each other, so that each predetermined tower terminal P provided in the portion serving as the first container body 20a and the quartz substrate 10a are formed. Each predetermined connecting terminal S is in contact with and electrically connected.
Accordingly, the first wafer W20a and the crystal wafer W10a are bonded to each other so that the first electrode 13a and one predetermined external connection terminal G are electrically connected. In addition, the second electrode 14a and a predetermined other external connection terminal G are electrically connected.

  In the second bonding step, the quartz wafer W10a is provided with the second wafer W30a in which portions to be a plurality of second container bodies 30a are arranged in a matrix and the convex portion 12a having a curved shape. This is a step of joining the other main surfaces. Here, the crystal wafer W10a and the second wafer W30a are bonded by, for example, anodic bonding.

Since the quartz wafer W10a is bonded to the second wafer W30a by anodic bonding, a second bonding metal layer 16a is provided on the other main surface to be bonded.
The second bonding metal layer 16a is formed using, for example, sputtering. The second bonding metal layer 16a is provided on the edge of the other main surface of the portion that becomes the quartz substrate 10a and in the portion that becomes the second container body 30a of the second wafer W30a described later. The second electrode sealing metal layer 31a is formed in an annular shape so as not to contact the second electrode 14a and the second wiring pattern 18a.

  In the second wafer W30a, portions to be a plurality of second container bodies 30a are arranged in a matrix. In addition, the arrangement position of the part used as the 2nd container body 30a of the 2nd wafer W30a respond | corresponds to the arrangement position of the part used as the quartz substrate 10a of the quartz wafer W10a.

The portion that becomes the second container body 30a has, for example, a rectangular shape, and the main surface thereof is the same size as the main surface of the portion that becomes the crystal substrate 10a.
In the portion to be the second container body 30a, a container body recess 32a and a second electrode sealing metal layer 31a are formed on one main surface by sputtering or the like.

The container concave portion 32a is sized so as not to contact the curved convex portion 12a, the second electrode 14a, and the second wiring pattern 18a provided in the portion to be the quartz substrate 10a.
The second electrode sealing metal layer 31a is an edge portion of one main surface of the portion that becomes the second container body 30a, and is a second bonding metal provided on the portion that becomes the crystal substrate 10a. An annular shape is provided at a position facing the layer 16a so as not to contact the second electrode 14a and the second wiring pattern 18a.

  The second electrode sealing metal layer 31a formed in the portion that becomes the second container body 30a is joined to the portion that becomes the quartz substrate 10a by anodic bonding with the second joining metal layer 16a. The second wafer W30a and the quartz wafer W10a are bonded together. Accordingly, the plurality of container recesses 32a provided on the second wafer W30a are overlapped and bonded toward the other main surface side of the crystal wafer W10a, and thus are formed in a portion that becomes the crystal substrate 10a. The second electrode 14a is sealed.

  The singulation step is a step of cutting the crystal wafer recesses 11a of the crystal wafer W10a into individual pieces for each crystal resonator 100. In the singulation process, the crystal wafer W10a bonded to the first wafer W20a and the second wafer W30a is bonded to the first container body 20a and the second container body 30a. Each substrate 10a is cut by dicing or the like.

In such a method for manufacturing a crystal resonator according to the first embodiment of the present invention, a plurality of annular resists having the same center are applied to a quartz crystal made of an anisotropic material by using an inkjet method and cured. Etching is performed by providing a cover made of a plurality of protective films.
In other words, since the etching speed of quartz, which is an anisotropic material, varies depending on the direction of the crystal axis, by providing a plurality of protective films with the same center on the quartz, it is possible to simulate the crystal resonator vibration part after etching. A curved surface-shaped convex portion can be easily provided.
Therefore, such a method of manufacturing a crystal unit includes a labor for irradiating the resist with an electromagnetic wave whose exposure intensity is changed by a lens and / or a filter to form a cover having the same shape as the vibrating unit of the crystal unit. Since the time can be saved, the manufacturing cost can be reduced.

  Further, in the method for manufacturing a crystal resonator according to the first embodiment of the present invention, a resist can be directly applied to a crystal wafer by using an ink jet method, so that a crystal can be used without using a concentration distribution mask. A vibrator can be manufactured. In other words, such a method for manufacturing a crystal resonator eliminates the time and labor required for aligning the position of the concentration distribution mask and the portion serving as the crystal substrate, thereby reducing the manufacturing cost.

(Second embodiment)
Next, a crystal resonator 110 manufactured by the method for manufacturing a crystal resonator according to the second embodiment of the present invention will be described.
In the crystal resonator 110 manufactured by the method for manufacturing a crystal resonator according to the second embodiment, the connection terminal S is provided on the main surface on which the second electrode 14b of the crystal substrate 10b is provided. The connection terminal G is different from the first embodiment in that the connection terminal G is provided in the second container body 30b.
Therefore, the manufacturing method of the crystal resonator according to the second embodiment is different from that of the first embodiment in that the connection terminal S is provided on the other main surface of the portion that becomes the crystal substrate 10b in the electrode forming step. Different.

First, the crystal resonator 110 manufactured by the crystal resonator manufacturing method according to the second embodiment will be described.
The quartz substrate 10b is, for example, a rectangular flat plate. A quartz substrate recess 11b is provided on one main surface, and a curved projection 12b is provided on the other main surface. The quartz substrate 10b is provided with a substrate through-hole (not shown) in the thickness direction of the quartz substrate 10b and in the vicinity of the quartz substrate recess 11b.
The quartz substrate 10b is provided with a first electrode 13b, a first wiring pattern 17b, and a first bonding metal layer 15b on one main surface side, and a second electrode 14b on the other main surface side. A second wiring pattern 18b, a second bonding metal layer 16b, and two pairs of connection terminals S are provided. Further, in the quartz substrate 10b, the substrate internal wiring NS is provided inside the substrate through hole.

The quartz substrate recess 11b is provided on one main surface of the quartz substrate 10b.
The curved convex portion 12b is located at a position facing the quartz substrate concave portion 11b, and is located on the other main surface of the quartz substrate 10b so that the position of the maximum height coincides with the center of the bottom surface of the quartz substrate concave portion 11b. Is provided.

The first electrode 13b is provided on the bottom surface of the quartz substrate recess 11b.
The second electrode 14b is a position facing the first electrode 13b and is provided on the other main surface of the quartz substrate 10b.
The substrate internal wiring NS is formed by embedding a metal or conductive paste in a substrate through hole provided in the vicinity of the quartz substrate recess 11b. Here, the vicinity means one main surface of the quartz substrate 10b in which the quartz substrate recess 11b is not provided, and is an edge of the quartz substrate 10b.
For example, two connection terminals S are provided side by side on one short side of the other main surface of the crystal substrate 10b. The connection terminal S is provided at a position where one other predetermined connection terminal S is connected to the substrate internal wiring NS and the other predetermined connection terminal S is connected to the second wiring pattern 18b. Yes.

The first wiring pattern 17b is provided along the surface in the quartz substrate recess 11b and one main surface of the quartz substrate 10b so as to be connected to the first electrode 13b and the substrate internal wiring NS. Therefore, the first electrode 13b and the predetermined one connection terminal S are electrically connected.
The second wiring pattern 18b is provided on the other main surface of the quartz substrate 10b so as to be connected to the second electrode 14b and another predetermined connection terminal S. Therefore, the second electrode 14b and the predetermined other connection terminal S are electrically connected.

The first bonding metal layer 15b is an edge of one main surface of the quartz substrate 10b, and is provided in an annular shape so as not to contact the first wiring pattern 17b. The first bonding metal layer 15b is bonded to the first electrode sealing metal layer 21b provided in the first container body 20b described later by anodic bonding.
The second bonding metal layer 16b is an edge of the other main surface of the quartz substrate 10b, and is opposed to one main surface provided with a container body recess 32b of the container second body 30b described later. An annular position is provided at the position. The second bonding metal layer 16b is provided so as not to contact the second electrode 14b, the second wiring pattern 18b, and the connection terminal S. The second bonding metal layer 16b is bonded to a second electrode sealing metal layer 31b provided in a second container body 30b described later by anodic bonding.

The first container body 20b is, for example, a rectangular flat plate. The first container body 20b has the same main surface as the main surface of the quartz substrate 10b.
The first container body 20b is provided with a first electrode sealing metal layer 21b on one main surface.

The first electrode sealing metal layer 21b is provided in an annular shape at the edge of one main surface of the first container body 20b and facing the first bonding metal layer 15b of the crystal substrate 10b. It has been.
The first electrode sealing metal layer 21b is bonded to the first bonding metal layer 15b by anodic bonding, and the first container body 20b and the crystal substrate 10b are bonded. Therefore, since the quartz substrate 10b is joined to the first container body 20b with the quartz substrate recess 11b facing the first container body 20b, the first substrate provided on the bottom surface of the quartz substrate recess 11b. The electrode 13b is sealed.

The second container body 30b is, for example, a rectangular flat plate. Moreover, the size of the main surface of the second container body 30b is the same as the size of the main surface of the crystal substrate 10b. The second container body 30b has a plurality of container body through holes (not shown) provided in the thickness direction of the second container body 30b.
The second container body 30b is provided with a container body recess 32b, a second bonding metal layer 31b, and two pairs of mounting terminals P on one main surface, and an external connection terminal S on the other main surface. Is provided. In the second container body 30b, the container body internal wiring NY2 is provided inside the container body through hole.

For example, four container body through holes are provided in the four corners of the second container body 30b in the thickness direction of the second container body 20b.
The container body internal wiring NY2 is formed by embedding a metal or a conductive paste in the container body through hole.
For example, two tower terminals P are provided side by side on the short side of one main surface of the second container body 30b. Moreover, the tower terminal P is provided at a position facing the connection terminal S provided on the quartz substrate 10b, and at a position where each predetermined tower terminal P is connected to each predetermined container body internal wiring NY2. ing.
For example, four external connection terminals G are provided at four corners of a portion that becomes the second container body 30b. The external connection terminals G are provided at positions where each predetermined external connection terminal G is connected to each predetermined container body internal wire NY2.

The second electrode sealing metal layer 31b is an edge of one main surface where the container body recess 32b of the second container body 30b is not provided, and is a second bonding metal layer of the crystal substrate 10b. It is provided in an annular shape so as not to contact the tower terminal P at a position facing the 16b.
The second electrode sealing metal layer 31b is bonded to the second bonding metal layer 16b by anodic bonding, and the second container body 30b and the crystal substrate 10b are bonded.
Accordingly, since the second container body 30b is joined to the second container body 30b with the container body recess 32b facing the crystal substrate 10b, the second container body 30b is provided on the other main surface of the crystal substrate 10b. The second electrode 14b is sealed.

  The method for manufacturing a crystal resonator according to the second embodiment of the present invention is the first implementation in that, in the electrode forming step, the connection terminal S is provided on the other main surface of the portion that becomes the crystal substrate 10b. Different from form.

The electrode forming step is a step of providing a first electrode 13b, a second electrode 14b, a first wiring pattern 17b, a second wiring pattern 18b, and a connection terminal on a portion to be the quartz substrate 10b of the quartz wafer W10b. is there.
The first electrode 13b is formed by sputtering or the like on the bottom surface of the quartz substrate recess 11b in the portion that becomes the quartz substrate 10b of the quartz wafer W10b.
The second electrode 14b is formed by sputtering or the like on the other main surface of the portion that becomes the crystal substrate 10b of the crystal wafer W10b at a position facing the first electrode 13b.
Two connection terminals S are formed by sputtering or the like. For example, two connection terminals S are formed on the other main surface of the portion to be the quartz substrate 10b and arranged side by side on one short side. The connection terminal S is provided at a position where one predetermined connection terminal S is connected to the substrate internal wiring NS and another predetermined connection terminal S is connected to the second wiring pattern 18b.
The first wiring pattern 17b is formed on one main surface of the surface in the quartz substrate recess 11b and the portion to be the quartz substrate 10b so as to be connected to the first electrode 13b and the substrate internal wiring NS by sputtering or the like. Formed along. Accordingly, the first electrode 13b and the predetermined one connection terminal S are electrically connected via the first wiring pattern 17b and the substrate internal wiring NS.
The second wiring pattern 18b is formed on the other main surface of the quartz substrate 10b so as to be connected to the second electrode 14b and one other predetermined connection terminal S by sputtering or the like. Therefore, the second electrode 14b is electrically connected to the other predetermined connection terminal S.

  In the first bonding step, one main portion of the first wafer W20b in which portions to be the plurality of first container bodies 20b are arranged in a matrix and the quartz crystal wafer W10b in which the quartz substrate recess 11b is provided. It is a process of joining the surfaces. Here, the crystal wafer W10b and the first wafer W20b are bonded by, for example, anodic bonding.

Since the quartz wafer W10b is bonded to the first wafer W20b by anodic bonding, a first bonding metal layer 15b is provided on one main surface to be bonded.
The first bonding metal layer 15b is formed using, for example, sputtering. The first bonding metal layer 15b is provided on the edge portion of one main surface of the portion that becomes the quartz substrate 10b and on the portion that becomes the first container body 20b of the first wafer W20b described later. Further, it is formed in an annular shape at a position facing the first electrode sealing metal layer 21b so as not to contact the first wiring pattern 17b.

  In the first wafer W20b, portions to be a plurality of first container bodies 20b are arranged in a matrix. In addition, the arrangement position of the part used as the 1st container body 20b of the 1st wafer W20b respond | corresponds to the arrangement position of the part used as the quartz substrate 10b of the quartz wafer 10b.

The portion that becomes the first container body 20b has, for example, a rectangular shape, and the main surface thereof is the same size as the main surface of the portion that becomes the crystal substrate 10b.
The part which becomes the first container body 20b is provided with the first electrode sealing metal layer 21b on one main surface.

The first electrode sealing metal layer 21b is an edge of one main surface of the portion that becomes the first container body 20b, and faces the first bonding metal layer 15b of the portion that becomes the crystal substrate 10b. It is provided in an annular shape at a position where
The first electrode sealing metal layer 21b is bonded to the first bonding metal layer 15b by anodic bonding, and the first wafer W20b provided with portions to be a plurality of first container bodies 20b is provided. A quartz wafer W10b provided with a portion to be a plurality of quartz substrates 10b is bonded.

  The first electrode sealing metal layer 21b provided in the portion to be the first container body 20b and the first bonding metal layer 15b formed in the portion to be the quartz substrate 10b are joined by anodic bonding. Thus, the first wafer W20b and the crystal wafer W10b are bonded. Accordingly, since the plurality of quartz substrate recesses 11b formed on the quartz wafer W10b are superposed and bonded toward one main surface side of the first wafer W20b, they are formed in a portion that becomes the quartz substrate 10b. The first electrode 13b that has been sealed is in a sealed state.

  In the second bonding step, the quartz wafer W10b is provided with the second wafer W30b in which portions to be a plurality of second container bodies 30b are arranged in a matrix and the convex portion 12b having a curved shape. This is a step of joining the other main surfaces. Here, the crystal wafer 10b and the second wafer W30b are bonded by, for example, anodic bonding.

Since the quartz wafer W10b is bonded to the second wafer W30b by anodic bonding, a second bonding metal layer 16b is provided on the other main surface to be bonded.
The second bonding metal layer 16b is formed using, for example, sputtering. The second bonding metal layer 16b is provided on the edge of the other main surface of the portion that becomes the quartz substrate 10b and in the portion that becomes the second container body 30b of the second wafer W30b described later. Further, it is formed in an annular shape at a position facing the second electrode sealing metal layer 31b so as not to contact the connection terminal S, the second electrode 14b, and the second wiring pattern 17b.

  In the second wafer W30b, portions to be a plurality of second container bodies 30b are arranged in a matrix. In addition, the arrangement position of the part used as the 2nd container body 30b of the 2nd wafer W30b respond | corresponds to the arrangement position of the part used as the quartz substrate 10b of the quartz wafer 10b.

The portion that becomes the second container body 30b has, for example, a rectangular shape, and the main surface thereof is the same size as the main surface of the portion that becomes the crystal substrate 10b. Moreover, the container body recessed part 32b is provided in the one main surface in the part used as the 2nd container body 30b. Moreover, the part used as the 2nd container body 30b is provided with the several container body through-hole (not shown).
The portion to be the second container body 30b is provided with a second electrode sealing metal layer 21b and two tower terminals P on one main surface, and a plurality of the other main surfaces are provided on the other main surface. External connection terminal G is provided. In addition, the portion that becomes the second container body 30b is provided with a plurality of container internal wirings NY2.

The container concave portion 32b is sized so as not to contact the curved convex portion 12b, the second electrode 14b, the second wiring pattern 18b, and the connection terminal S provided in the portion to be the quartz substrate 10b.
For example, four container body through-holes are provided in the thickness direction of the second wafer W30b at four corners of the portion to be the second container body 20b.

The container body internal wiring NY2 is formed by embedding a metal or a conductive paste in the container body through hole.
For example, two tower terminals P are provided side by side on the short side of one main surface of the portion to be the second container body 30b. Moreover, the tower terminal P is a position facing the connection terminal S provided in the portion to be the quartz substrate 10b, and a position at which each predetermined tower terminal P is connected to each predetermined container body internal wiring NY2. Is provided.
For example, four external connection terminals G are provided at four corners of a portion that becomes the second container body 30b. The external connection terminals G are provided at positions where each predetermined external connection terminal G is connected to each predetermined container body internal wire NY2.
The second electrode sealing metal layer 31b is an edge of one main surface of the portion that becomes the second container body 30b, and faces the second bonding metal layer 16b of the portion that becomes the crystal substrate 10b. It is provided in an annular shape so that it does not come into contact with the tower terminal P.

  The second electrode sealing metal layer 31b is bonded to the second bonding metal layer 16b by anodic bonding, and a second wafer W30b provided with portions to be a plurality of second container bodies 30b is provided. A quartz wafer W10b provided with a portion to be a plurality of quartz substrates 10b is bonded.

  When the second electrode sealing metal layer 31b formed in the portion to be the second container body 30b is bonded to the portion to be the crystal substrate 10b by anodic bonding with the second bonding metal layer 16b. The second wafer W30b and the quartz wafer W10b are bonded together. Therefore, since the plurality of container body recesses 32b provided on the second wafer W30b are overlapped and bonded toward the other main surface side of the crystal wafer W10b, they are formed in a portion that becomes the crystal substrate 10b. The second electrode 14b is sealed.

Further, by joining the second wafer W30b and the quartz wafer W10b, each predetermined tower terminal P provided in the portion serving as the second container body 30b and the portion serving as the quartz substrate 10b are formed. Each predetermined connecting terminal S is in contact with and electrically connected.
Therefore, by joining the second wafer W30b and the quartz wafer W10b, the first electrode 13b and one predetermined external connection terminal G are electrically connected. Further, the second electrode 14b and a predetermined other external connection terminal G are electrically connected.

  In such a method of manufacturing a crystal resonator according to the second embodiment of the present invention, a plurality of annular resists having the same center are applied to a quartz crystal made of an anisotropic material by using an inkjet method, and cured. Then, a cover 40b made of a plurality of protective films is provided and etching is performed to provide a pseudo-curved convex portion 12b on the vibrating portion of the crystal resonator. In other words, the method for manufacturing the crystal resonator according to the second embodiment is the same as the method for manufacturing the crystal resonator according to the first embodiment, and therefore has the same effect.

  In the electrode forming step, the case of forming by sputtering is described, but a method of forming a metal film by using a photolithography technique and an etching technique after forming a metal film on the entire surface of the wafer may be used. .

  In the electrode forming step, the first electrode, the second electrode, the first wiring pattern, the second wiring pattern, and the connection terminal are formed at the same time, but they may be formed separately.

  In the first bonding step, the case where the first bonding metal layer is formed by sputtering or the like has been described. However, after the metal film is formed on the entire surface of the wafer, the metal film is formed using photolithography technology and etching technology. Alternatively, a method of forming the above may be used.

  In the second bonding step, the case where the second bonding metal layer is formed by sputtering or the like has been described. However, after the metal film is formed on the entire surface of the wafer, the metal film is formed using a photolithography technique and an etching technique. Alternatively, a method of forming the above may be used.

  In addition, although the case where the 1st container body was flat form was demonstrated, if the 1st electrode can be sealed with a 1st container body, a 1st container body recessed part will be provided in a 1st container body. It may be done.

  Although the case where the crystal wafer and the first wafer are bonded by anodic bonding has been described, the crystal wafer and the first wafer may be bonded directly or by resin or the like.

  Although the case where the crystal wafer and the second wafer are bonded by anodic bonding has been described, the crystal wafer and the second wafer may be bonded directly or by resin or the like.

  In addition, although the case where the convex part of curved surface shape is provided in the main surface of the quartz substrate facing the bottom face of a quartz substrate recessed part is demonstrated, you may provide in the bottom face of a quartz substrate recessed part.

  In addition, although the case where the convex part of the curved surface is provided on the main surface of the quartz substrate facing the bottom surface of the quartz substrate recess is described, there is one on the principal surface of the quartz substrate facing the bottom surface and the bottom surface of the quartz substrate recess. You may provide each.

  In addition, although the manufacturing method of the crystal unit according to the present invention has been described with respect to the case where a curved surface-shaped convex portion is provided in the vibrating portion of the crystal unit, it is similar to a curved surface-shaped concave portion or a curved surface-shaped concave portion. A recess may be provided. In such a case, the plurality of protective films are provided so that the distance from the adjacent protective film becomes wider toward the center of the portion to be the quartz substrate 10a.

100, 110 Crystal resonators 10a, 10b Crystal substrates 11a, 11b Crystal substrate recesses 12a, 12b Curved projections 13a, 13b First electrodes 14a, 14b Second electrodes 15a, 15b First bonding metal layer 16a , 16b Second bonding metal layers 17a, 17b First wiring patterns 18a, 18b Second wiring patterns 20a, 20b First container bodies 21a, 21b First electrode sealing metal layers 30a, 30b Second Container body 31a, 31b Second electrode sealing metal layer 32a, 32b Container body recess 40a Cover 41a, 41b, 41c, 41d Protective film P Tower terminal S Connection terminal NS Substrate internal wiring NY1, NY2 Container body internal wiring

Claims (1)

A quartz substrate recess forming step in which a plurality of crystal substrate recesses are provided in a matrix on one main surface of the crystal wafer, and substrate internal wiring is provided in the thickness direction in the vicinity of the crystal substrate recesses;
A plurality of annular resists having the same center are applied to the portion of the other main surface of the quartz wafer, which becomes the quartz substrate, by using an inkjet method, and cured to provide a cover made of a plurality of protective films. A cover forming step;
A convex processing step of processing the other main surface of the quartz wafer provided with the cover;
An electrode forming step of providing a first electrode, a second electrode, a first wiring pattern, a second wiring pattern, and a connection terminal on a portion to be a quartz substrate of the quartz wafer;
A first bonding step of bonding a first wafer provided with a plurality of first container bodies and the crystal wafer, with the crystal substrate recess facing the first wafer;
A second bonding step of bonding a second wafer having a plurality of container body recesses provided on one main surface and the crystal wafer with the container body recess facing the crystal wafer side;
A singulation step of cutting between the quartz substrate recesses of the quartz wafer and separating each quartz crystal unit,
A method for manufacturing a crystal resonator, comprising:

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