JP5286085B2 - Dicing die bonding tape and semiconductor chip manufacturing method - Google Patents

Abstract

Provided is a dicing/die bonding tape for easily and surely picking up a semiconductor chip, in the case of dicing a semiconductor wafer and picking up the semiconductor chip together with a die bonding film. The dicing/die bonding tape is provided with a cohesive/adhesive layer, and a non-cohesive layer laminated on the cohesive/adhesive layer. The non-cohesive layer is formed of a composition containing acrylic ester polymer as a main component, and the non-cohesive layer has a storage elastic modulus of 1-400MPa and a fracture elongation of 5-100% at a temperature when the semiconductor chip is picked up.

Description

  The present invention relates to a dicing die bonding tape used for manufacturing a semiconductor chip, and more particularly to a dicing die bonding tape that is bonded to a semiconductor wafer and used at the time of dancing and die bonding, and the dicing die bonding tape. The present invention relates to a method of manufacturing a semiconductor chip using the above.

  Conventionally, a dicing die bonding tape has been used to cut out a semiconductor chip from a semiconductor wafer and mount it on a substrate or the like. In the dicing-die bonding tape, a semiconductor wafer is stuck on one surface of a die bonding film, and a dicing film is stuck on the other surface of the die bonding film. In dicing, the semiconductor wafer is diced together with the die bonding film. After dicing, the die bonding film to which the semiconductor chip is bonded is peeled from the dicing film, and the semiconductor chip is taken out together with the die bonding film. Then, the semiconductor chip is mounted on the substrate from the die bonding film side.

  In dicing, the semiconductor wafer must be firmly bonded to the dicing film in order to perform dicing stably. Further, when picking up a semiconductor chip after dicing, the die bonding film to which the semiconductor chip is bonded must be peeled off from the dicing film without difficulty. Therefore, a dicing film including a base material and a pressure-sensitive adhesive layer that is laminated on the surface of the base material and is cured by irradiation with ultraviolet rays or radiation is used. In this type of dicing film, the pressure-sensitive adhesive layer is cured by irradiation with ultraviolet rays, radiation, light, or the like after dicing, thereby reducing the pressure-sensitive adhesive force of the pressure-sensitive adhesive layer. When the adhesive strength of the pressure-sensitive adhesive layer is reduced, the die bonding film to which the semiconductor chip is bonded is easily peeled from the dicing film.

For example, Patent Document 1 below discloses a dicing die bonding tape in which a dicing tape having a radiation curable pressure-sensitive adhesive layer is laminated on one side of a film adhesive layer. The film adhesive layer is made of a film adhesive containing a thermoplastic resin and an epoxy resin. Here, a trifunctional or higher functional epoxy resin and a liquid epoxy resin are used as the epoxy resin. The film adhesive layer corresponds to a die bonding film attached to one surface of a semiconductor chip.
JP 2004-292281 A

  As described in Patent Document 1, when a dicing tape having an adhesive layer that is cured by irradiation with radiation or ultraviolet rays is used, it is necessary to irradiate the adhesive with ultraviolet rays or radiation to reduce the adhesive strength of the adhesive. It was. Therefore, the process of irradiating with ultraviolet rays or radiation had to be performed. In addition, facilities for irradiating ultraviolet rays and radiation had to be prepared. Furthermore, ultraviolet curable resins and radiation curable resins are relatively expensive.

  Further, the radiation curable pressure-sensitive adhesive layer described in Patent Document 1 is relatively soft because it is uncured during dicing. Therefore, the machinability at the time of dicing is not sufficient, and when picking up the semiconductor chip after dicing, beard-like cutting waste is likely to be generated. Therefore, the semiconductor chip may not be picked up reliably. In addition, when the beard-like cutting waste adheres to the die bonding film or the semiconductor chip, the picked-up semiconductor chip may not be mounted in the correct orientation and with high accuracy.

  Furthermore, in recent years, semiconductor wafers have become thinner, and along with this, dicing with laser light has been widely used. When dicing by laser light irradiation, the pressure-sensitive adhesive cured by irradiation with ultraviolet rays or radiation may react even by laser light irradiation and be fused to the die bonding film. In this case, the diced semiconductor chip may not be picked up at all.

  Moreover, even if it irradiated with the radiation, the adhesive force of the radiation curable adhesive might not become low enough. When the die bonding film to which the semiconductor chip is bonded is to be peeled from the radiation curable pressure-sensitive adhesive layer whose adhesive force is not sufficiently lowered, an extra force is applied to the semiconductor chip. As a result, the semiconductor chip may be damaged.

  The object of the present invention is to easily dice a semiconductor wafer together with the die bonding film without requiring a complicated operation of irradiating ultraviolet rays or light when dicing the semiconductor wafer and picking up the semiconductor chip together with the die bonding film. Another object of the present invention is to provide a dicing die bonding tape that can be reliably picked up and a semiconductor chip manufacturing method using the dicing die bonding tape.

  The present invention is a dicing die bonding tape comprising an adhesive layer and a non-adhesive layer laminated on the adhesive layer, wherein the non-adhesive layer contains an acrylic polymer as a main component. The non-adhesive layer has a storage elastic modulus of 1 to 400 MPa and a breaking elongation of 5 to 100% at the temperature at which the semiconductor chip is picked up. The adhesive layer is a part used as a die bonding film. That is, the adhesive layer is a portion picked up together with the semiconductor chip when picking up the semiconductor chip.

The non-adhesive layer is preferably formed of a crosslinked product obtained by crosslinking a composition containing an acrylic polymer as a main component.
In the dicing die bonding tape according to the present invention, preferably, the peeling force between the non-adhesive layer and the adhesive layer is 1 to 15 N / m. When the peeling force is within this range, the adhesive layer to which the semiconductor chip is bonded can be easily removed from the non-adhesive layer without irradiating ultraviolet rays or the like, and the semiconductor chip can be easily removed together with the adhesive layer. And it can be reliably picked up.

  In the present invention, preferably, the composition further contains an oligomer having a double bond capable of reacting with an acrylic group and having a weight average molecular weight in the range of 100 to 50,000. This oligomer has flexibility at room temperature. For this reason, the storage elastic modulus and elongation at break can be easily set within the specific range by using the oligomer. The oligomer is at least one skeleton selected from the group consisting of a polyether skeleton, a polyester skeleton, a butadiene skeleton, a polyurethane skeleton, a silicate skeleton, an isoprene skeleton, a polyalkyl skeleton, a polyacrylonitrile skeleton, a polycarbonate skeleton, and a dicyclopentadiene skeleton. It is preferable to have. Since the oligomer having these skeletons is flexible, the storage elastic modulus and elongation at break of the non-adhesive layer can be more easily within the specific range.

  The non-adhesive layer preferably contains a filler powder having an average particle size of 0.1 to 10 μm. In this case, the machinability at the time of dicing can be improved. Accordingly, it is possible to suppress the attachment of cutting chips to the semiconductor chip and the adhesive layer that is cut together with the semiconductor chip.

  The dicing die bonding tape according to the present invention is used when a semiconductor wafer is diced into a semiconductor chip, and in the process of picking up the diced semiconductor chip together with the diced adhesive layer.

  In the dicing-die bonding tape of the present invention, the non-adhesive layer may also serve as a dicing film during dicing. In that case, a semiconductor wafer can be affixed on the dicing die-bonding tape of this invention, and dicing can be performed.

  The dicing die-bonding tape according to the present invention may further include a dicing film laminated on a surface of the non-adhesive layer opposite to the surface on which the adhesive layer is laminated. In this case, expansion or the like in dicing can be reliably performed by the dicing film. Accordingly, since the non-adhesive layer does not require a function as a dicing film, the non-adhesive layer can be freely designed with various materials and compositions.

  The method for producing a semiconductor chip according to the present invention comprises a step of preparing a dicing die bonding tape according to the present invention and a semiconductor wafer, and the non-adhesive layer of the adhesive layer of the dicing die bonding tape is laminated. A step of bonding the semiconductor wafer to a surface opposite to a surface on which the semiconductor wafer is bonded, and dicing the semiconductor wafer bonded to the dicing die bonding tape together with the adhesive layer to divide the semiconductor wafer into individual semiconductor chips. And a step of, after dicing, peeling off the adhesive layer to which the semiconductor chip is bonded from the non-adhesive layer and taking out the semiconductor chip together with the adhesive layer.

In the method for manufacturing a semiconductor chip with an adhesive layer according to the present invention, preferably, the removal of the semiconductor chip changes the peeling force between the adhesive layer and the non-adhesive layer after dicing. Done without. In the present invention, the semiconductor chip with an adhesive layer can be efficiently taken out without changing the peeling force after dicing.
(Effect of the invention)

Since the dicing die-bonding tape according to the present invention includes an adhesive layer and a non-adhesive layer, the surface of the adhesive layer opposite to the side where the non-adhesive layer is laminated is provided. A semiconductor wafer is bonded, a dicing process is performed according to the semiconductor chip manufacturing method of the present invention, and after dicing, the adhesive layer to which the semiconductor chip is bonded is peeled from the non-adhesive layer, and the semiconductor chip is bonded to the adhesive layer. The semiconductor chip with an adhesive layer can be manufactured by taking out the whole.
Further, the non-adhesive layer is formed of a composition containing an acrylic polymer as a main component, and the storage elastic modulus at a temperature at the time of picking up the semiconductor chip of the non-adhesive layer is 1 to 400 MPa, and the elongation at break. Since the degree is in the range of 5 to 100%, the adhesive layer to which the semiconductor chip is bonded can be easily and easily peeled from the non-adhesive layer without changing the peeling force of the non-adhesive layer after dicing. . In addition, at the time of dicing, the adhesive layer can be cut together with the semiconductor wafer without difficulty. Therefore, during dicing, it is difficult for cutting waste to occur, and pick-up failure due to the cutting waste is unlikely to occur.

  Moreover, in the prior art using a dicing tape having a radiation curable pressure-sensitive adhesive layer, the adhesive strength of the dicing film may not be sufficiently lowered even when irradiated with radiation. For this reason, when the die bonding film to which the semiconductor chip is bonded is peeled off, an excessive force is applied to the semiconductor chip, and the chip is likely to crack. On the other hand, in the dicing die bonding tape of the present invention, the semiconductor chip bonded to the adhesive layer can be picked up without difficulty without performing a process for reducing the adhesive force. For this reason, it is difficult to apply an extra force to the semiconductor chip, and the semiconductor chip is hardly damaged. Therefore, the dicing die bonding tape according to the present invention is particularly advantageous when used for processing a thin semiconductor wafer.

  When the non-adhesive layer is not configured such that the adhesive strength is reduced by light irradiation, the quality of the non-adhesive layer does not change by laser light irradiation. Therefore, in this case, a dicing die bonding tape can be suitably used for dicing by laser light irradiation.

1A and 1B are a partially cutaway front sectional view and a partially cutaway plan view showing a dicing die bonding tape according to an embodiment of the present invention. FIG. 2 is a partially cutaway front sectional view showing a dicing die bonding tape according to another embodiment of the present invention. FIG. 3 is a plan view showing a semiconductor wafer used for manufacturing a semiconductor chip. FIG. 4 is a view for explaining a method of manufacturing a semiconductor chip using a dicing die bonding tape according to an embodiment of the present invention. It is front sectional drawing which shows the state in which the semiconductor wafer was set | placed on the stage. FIG. 5 is a view for explaining a method of manufacturing a semiconductor chip using a dicing die bonding tape according to an embodiment of the present invention. It is front sectional drawing which shows a state when joining a semiconductor wafer to an adhesive agent layer. FIG. 6 is a view for explaining a method of manufacturing a semiconductor chip using a dicing die bonding tape according to an embodiment of the present invention. It is front sectional drawing which shows the state by which the semiconductor wafer was joined to the adhesive layer. FIG. 7 is a view for explaining a method of manufacturing a semiconductor chip using a dicing die bonding tape according to an embodiment of the present invention. It is a front sectional view showing the state where the semiconductor wafer with an adhesive layer was turned over and placed on another stage. 8A to 8D are views for explaining a method of manufacturing a semiconductor device using a dicing die bonding tape according to an embodiment of the present invention. It is a partial notch front sectional view which shows the process of dicing the semiconductor wafer with which the adhesive agent layer was joined, and dividing | segmenting into each semiconductor chip in steps. FIG. 9 is a front sectional view showing a semiconductor chip manufactured using a dicing die bonding tape according to an embodiment of the present invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... Dicing die bonding tape 2 ... Release film 2a ... Upper surface 3 ... Adhesive layer 3a ... Surface 4 ... Non-adhesive layer 4a ... One side 4b ... The other side 5 ... Dicing film 5a ... Base material 5b ... Adhesive layer 5c ... Extension part 6,7 ... Protective sheet 11 ... Dicing die bonding tape 15 ... Dicing die bonding tape 16 ... Dicing film 21 ... Semiconductor wafer 21a ... Front surface 21b ... Back surface 21c ... Outer peripheral surface 22 ... Stage 23 ... Dicing ring 24 ... Stage 31 ... Semiconductor chip 41 ... First cutting blade 42 ... First cutting portion 43 ... Second cutting blade 44 ... Second cutting portion

Details of the present invention will be described below.
1A and 1B show a dicing die bonding tape according to an embodiment of the present invention in a partially cutaway front sectional view and a partially cutaway plan view.

  As shown in FIGS. 1A and 1B, the dicing die bonding tape 1 has a long release film 2. On the upper surface 2a of the release film 2, an adhesive layer 3 as a die bonding film, a non-adhesive layer 4, and a dicing film 5 are laminated in this order. The adhesive layer 3 is attached to one surface 4 a of the non-adhesive layer 4. A dicing film 5 is attached to the other surface 4 b opposite to the one surface of the non-adhesive layer 4.

The planar shapes of the adhesive layer 3, the non-adhesive layer 4, and the dicing film 5 are circular.
The diameter of the adhesive layer 3 may be different from the diameter of the non-adhesive layer 4. The diameter of the non-adhesive layer 4 is preferably larger than the diameter of the adhesive layer 3. It is preferable that the outer peripheral side surface of the non-adhesive layer 4 projects outward from the outer peripheral side surface of the adhesive layer 3. In these cases, when the semiconductor wafer is bonded to the adhesive layer 3, the semiconductor wafer can be accurately aligned with the portion corresponding to the position where the non-adhesive layer 4 is provided. In addition, the semiconductor wafer can be reliably bonded to the adhesive layer 3.

  The diameter of the dicing film 5 is larger than the diameters of the adhesive layer 3 and the non-adhesive layer 4. Thus, the diameter of the dicing film 5 is preferably larger than the diameters of the adhesive layer 3 and the non-adhesive layer 4. It is preferable that the outer peripheral side surface of the dicing film 5 projects outward from the outer peripheral side surfaces of the adhesive layer 3 and the non-adhesive layer 4. In these cases, a dicing ring can be attached to the dicing film 5. In addition, the semiconductor wafer can be accurately aligned and affixed to the adhesive layer 3. In addition, since the dicing ring and the semiconductor wafer can be attached to different layers, the adhesive layer 3 and the dicing film can be formed of optimum materials. For this reason, cutting property and pick-up property, and bonding reliability after die bonding are enhanced.

Moreover, it is preferable that the outer peripheral side surface of the non-adhesive layer 4 is not covered with the adhesive layer 3.
The surface 3a to which the release film 2 of the adhesive layer 3 is attached is the surface to which the semiconductor wafer is attached.

  The dicing film 5 has the base material 5a and the adhesive layer 5b laminated | stacked on the single side | surface of the base material 5a. A dicing film 5 is stuck to the other surface 4b of the non-adhesive layer 4 from the adhesive layer 5b side. The dicing film 5 is indirectly attached to the adhesive layer 3 through the non-adhesive layer 4.

  One side of the extension portion 5c of the dicing film 5 is attached to the upper surface 2a of the release film with the adhesive layer 5b. That is, the dicing film 5 is stuck to the upper surface 2 a of the release film 2 in a region outside the outer peripheral side surfaces of the adhesive layer 3 and the non-adhesive layer 4.

  The dicing film 5 has the extension 5c when the semiconductor wafer is bonded to the surface 3a of the adhesive layer 3 when the extension 5c is located outside the outer peripheral side surface of the adhesive layer 3. This is for attaching a dicing ring to the adhesive layer 5b.

  As shown in FIG.1 (b), the several laminated body which consists of the adhesive layer 3, the non-adhesion layer 4, and the dicing film 5 is arrange | positioned at equal intervals on the upper surface 2a of the elongate release film 2. As shown in FIG. ing. Further, protective sheets 6 and 7 are provided on the upper surface 2 a of the release film 2. When the protective sheets 6 and 7 are provided, the pressure applied to the dicing film 5 when the dicing-die bonding tape 1 is wound, for example, in a roll shape is reduced by the protective sheets 6 and 7. Note that the protective sheets 6 and 7 may not be provided.

  The thickness and shape of the release film are not particularly limited. For example, a square release film may be used. On the upper surface of the release film, only one laminate comprising an adhesive layer, a non-adhesive layer, and a dicing film may be disposed. Moreover, the said laminated body and release film do not need to be wound by roll shape. Further, the thickness and shape of the adhesive layer, the non-adhesive layer, and the dicing film are not particularly limited.

  The dicing-die bonding tape 1 of the present embodiment is characterized in that the non-adhesive layer 4 is formed of a composition containing an acrylic polymer as a main component, and the non-adhesive layer 4 at the temperature at the time of picking up a semiconductor chip. The storage elastic modulus is 1 to 400 MPa and the elongation at break is 5 to 100%.

When the storage elastic modulus is less than 1 MPa, the non-adhesive layer 4 becomes too soft, and the handleability of the non-adhesive layer 4 itself may be lowered. When the storage elastic modulus exceeds 400 MPa, a separation starting point is hardly generated, and the semiconductor chip may not be picked up satisfactorily. When the breaking elongation is less than 5%, the handleability of the non-adhesive layer 4 may be lowered. When the breaking elongation exceeds 100%, cutting waste may be easily generated during dicing.
The storage elastic modulus is preferably in the range of 1 to 150 MPa. The breaking elongation at the temperature at the time of picking up the semiconductor chip is preferably in the range of 10 to 50%.

  In this specification, “storage elastic modulus” means that a non-adhesive layer 4 having a thickness of 0.5 mm and a width of 5 mm is cut into a width of 3 cm, and 10 Hz and a strain of 0.1% are obtained using DVA-200 manufactured by IT Measurement Co. It means the value of storage elastic modulus when measured under the conditions.

  In this specification, “temperature during pick-up” is a value obtained by measuring the temperature of a semiconductor chip when a semiconductor chip after dicing is pushed up by a push-up pin with a thermocouple in the step of picking up the semiconductor chip. It is preferable that the temperature at the time of pick-up exists in the range of 20-25 degreeC.

  In this specification, “breaking elongation” means that, based on JIS K7127, using RTC-1310A manufactured by Orientec, pulling the non-adhesive layer 4 alone at a tensile speed of 300 mm / min, It means a value obtained by measuring elongation.

  In the dicing die bonding tape 1, the peeling force between the adhesive layer 3 and the non-adhesive layer 4 is preferably in the range of 1 to 15 N / m, and in the range of 1 to 8 N / m. Is more preferable. When the peeling force between the adhesive layer 3 and the non-adhesive layer 4 is within these preferable ranges, the adhesive layer 3 is easily peeled from the non-adhesive layer 4 without reducing the peeling force. be able to. Furthermore, when the semiconductor wafer is diced or when the semiconductor chip is taken out, damage to the semiconductor chip can be prevented.

  If the peeling force between the adhesive layer 3 and the non-adhesive layer 4 is less than 1 N / m, chip fly is likely to occur during dicing. When the peeling force exceeds 15 N / m, it is difficult to peel the adhesive layer 3 to which the semiconductor chip is bonded from the non-adhesive layer 4.

  The said peeling force is calculated | required with the following method. First, a stainless steel plate is affixed to the surface of the adhesive layer 3 of the dicing die bonding tape 1 opposite to the surface to which the non-adhesive layer 4 is affixed. And the adhesive agent layer 3 and a stainless steel board are fully joined, and a test body is obtained. Thereafter, the specimen is fixed so that the adhesive layer 3 is on the bottom and the non-tacky layer 4 is on the top. In this state, a force is applied to the non-adhesive layer 4 in the direction of 180 degrees with respect to the interface between the adhesive layer 3 and the non-adhesive layer 4 to peel the non-adhesive layer 4 from the adhesive layer 3. The force required for peeling at this time is measured by using AGS-100D manufactured by Shimadzu Corporation, and is defined as peeling force.

  In the dicing-die bonding tape 1, the non-adhesive layer 4 is used in order to make the peeling force within the specific range. That is, the non-adhesive layer 4 is used as a peeling force adjusting film for adjusting the peeling force.

  In addition, the specific material of the non-adhesion layer 4 for making the said storage elastic modulus, breaking elongation, and peeling force into each said specific range is explained in full detail later.

  In the dicing die bonding tape according to the present invention, the dicing film 5 may be omitted, and the non-adhesive layer 4 may also serve as the dicing film.

  However, since dicing can be more effectively prevented during dicing, a dicing film is provided on the surface of the non-adhesive layer 4 opposite to the surface to which the adhesive layer 3 is attached. 5 is preferably affixed. In this case, since the non-adhesive layer 4 is not required to have expandability during dicing, the material and composition of the non-adhesive layer 4 can be selected from a wider range.

(Details of material constituting non-adhesive layer 4)
The non-adhesive layer 4 is formed of a composition containing an acrylic polymer as a main component, the storage elastic modulus at the temperature at the time of picking up a semiconductor chip is in the specific range, and the elongation at break is the specific value. As long as it is in the range, it is not particularly limited. Various acrylic resin films can be used as the non-adhesive layer 4.

  In the present specification, the non-adhesive layer has a “non-adhesive” property. “Non-tacky” includes not only the case where the surface is not sticky, but also the case where the surface is so sticky that it does not stick when touched with a finger.

  The composition containing the acrylic polymer as a main component contains 50% by weight or more of an acrylic polymer as a resin component. An acrylic resin film formed of such a composition is softer than a polyolefin film or the like. By using the composition containing the acrylic polymer as a main component, the storage elastic modulus can be made relatively low, for example, the storage elastic modulus can be about 400 MPa. Therefore, it is possible to improve the machinability during dicing. Moreover, by selecting the acrylic polymer used as the main component, the polarity of the non-adhesive layer 4 can be lowered, the storage elastic modulus can be lowered, and the elongation at break can be easily set within the specific range.

  The acrylic polymer is not particularly limited. The acrylic polymer is preferably a (meth) acrylic acid alkyl ester polymer. As the (meth) acrylic acid alkyl ester polymer, a (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms is preferably used. When the (meth) acrylic acid alkyl ester polymer having an alkyl group having 1 to 18 carbon atoms is used, the polarity of the non-adhesive layer 4 can be sufficiently reduced, and the surface energy of the non-adhesive layer 4 is reduced. In addition, the peelability of the adhesive layer 3 from the non-adhesive layer 4 can be enhanced. If the alkyl group has more than 18 carbon atoms, it may be difficult to produce a non-adhesive layer. The alkyl group preferably has 6 or more carbon atoms. In this case, the polarity of the non-adhesive layer 4 can be further reduced.

  In the present specification, “(meth) acrylic acid” means “methacrylic acid or acrylic acid”.

  The acrylic polymer is preferably a polymer obtained using a (meth) acrylic acid alkyl ester monomer having an alkyl group having 1 to 18 carbon atoms as a main monomer. The acrylic polymer is a (meth) acryl obtained by copolymerizing the main monomer, a functional group-containing monomer, and, if necessary, another modifying monomer that can be copolymerized therewith by a conventional method. More preferably, it is an acid alkyl ester polymer. The number of carbon atoms in the alkyl group of the (meth) acrylic acid alkyl ester polymer is preferably 2 or more, and particularly preferably 6 or more. The acrylic polymer has a weight average molecular weight of about 200,000 to 2,000,000.

  The other modifying monomers are not particularly limited. The other modifying monomer is preferably not a monomer containing a carboxyl group. When the monomer containing a carboxyl group is used, the polarity of the non-adhesive layer 4 becomes high, and as a result, the pick-up property may be adversely affected.

  The (meth) acrylic acid alkyl ester monomer is not particularly limited. The (meth) acrylic acid alkyl ester monomer is an alkyl (meth) acrylate obtained by an esterification reaction between a primary or secondary alkyl alcohol having a C 1-18 alkyl group and (meth) acrylic acid. An ester monomer is preferred.

  Specific examples of the (meth) acrylic acid alkyl ester monomer include methyl (meth) acrylate, ethyl (meth) acrylate, propyl (meth) acrylate, isopropyl (meth) acrylate, and (meth) acrylic acid. Examples include n-butyl, t-butyl (meth) acrylate, 2-ethylhexyl (meth) acrylate, octyl (meth) acrylate, or lauryl (meth) acrylate.

In addition, the said (meth) acrylic-acid alkylester monomer may be used independently, or 2 or more types may be used together.
Examples of the functional group-containing monomer include 2-hydroxyethyl (meth) acrylate, 2-hydroxypropyl (meth) acrylate, 4-hydroxybutyl (meth) acrylate, 6-hydroxyhexyl (meth) acrylate, (meth And hydroxyl group-containing monomers such as 8-hydroxyoctyl acrylate, 10-hydroxydecyl (meth) acrylate, 12-hydroxylauryl (meth) acrylate or (4-hydroxymethylcyclohexyl) methyl (meth) acrylate.

  The acrylic polymer is preferably a curable acrylic polymer having a reactive double bond. In this case, the crosslinking density of the crosslinked body obtained by crosslinking the composition containing the curable acrylic polymer as a main component can be increased. Examples of the curable acrylic polymer include a curable acrylic polymer having a reactive double bond in the side chain, main chain, or main chain terminal. The method for introducing a reactive double bond into the acrylic polymer is not particularly limited. Since the molecular design is easy, the reactive double bond is preferably introduced into the side chain. For example, after preparing a functional group-containing acrylic polymer obtained by copolymerizing a functional group-containing monomer with an acrylic polymer, a functional group (hereinafter referred to as functional group B) that can react with this functional group (hereinafter also referred to as functional group A). And a compound having both a reactive double bond (hereinafter, also referred to as compound C) to the functional group-containing acrylic polymer by condensation reaction or addition reaction so that the reactive double bond remains. The method to introduce is mentioned.

  Examples of the combination of the functional group A and the functional group B include a combination of a carboxyl group and an epoxy group, a carboxyl group and an aziridyl group, or a hydroxyl group and an isocyanate group. Among these combinations of functional groups, since the reaction can be easily controlled, a combination of a hydroxyl group and an isocyanate group is preferable. In the combination of these functional groups, any functional group may be contained in the functional group-containing acrylic polymer, and any functional group may be contained in the compound C. A combination of a functional group-containing acrylic polymer having a hydroxyl group and the above compound having an isocyanate group is preferred. Examples of the isocyanate compound having an isocyanate group and a reactive double bond include methacryloyl isocyanate, 2-methacryloyloxyethyl isocyanate, 1,1-bis (acryloyloxymethyl) ethyl isocyanate, or m-isopropenyl-α, α- Examples thereof include dimethylbenzyl isocyanate. The functional group-containing acrylic polymer having a hydroxyl group is preferably an acrylic polymer obtained by copolymerizing the above-mentioned hydroxyl group-containing monomer or hydroxyl group-containing ether compound with an acrylic polymer. Examples of the hydroxyl group-containing ether compound include 2-hydroxyethyl vinyl ether, 4-hydroxybutyl vinyl ether, diethylene glycol monovinyl ether, and the like.

  The non-adhesive layer is preferably formed of a crosslinked product obtained by crosslinking a composition containing an acrylic polymer as a main component. In this case, the machinability at the time of dicing and the peelability from the non-adhesive layer of the adhesive layer after dicing can be improved.

  As a method for producing the non-adhesive layer, first, a composition containing the acrylic polymer, a photoreaction initiator or a thermal reaction initiator, and other compounds to be blended as necessary is used on a release film. To form a composition layer. Then, at least one of light irradiation and heating is performed. Accordingly, the composition layer is cured (crosslinked) by photocuring or thermosetting, or by photocuring and thermosetting, and a non-adhesive layer composed of the cured (crosslinked) composition layer is obtained. Among these, it is particularly preferable to use photocuring.

  When producing a non-adhesion layer by thermosetting, the release film laminated | stacked on the composition layer heat-shrinks depending on the temperature at the time of hardening. When the release film is thermally contracted, the thickness accuracy of the obtained non-adhesive layer may be lowered. When the thickness accuracy of the non-adhesive layer decreases, the adhesion between the non-adhesive layer and the adhesive layer may decrease. Moreover, when the thickness accuracy of the non-adhesive layer is low and the adhesive layer and the non-adhesive layer are not sufficiently adhered, the unevenness of the surface of the adhesive layer may increase. If the unevenness of the surface of the adhesive layer is large, the adhesion between the adhesive layer and the semiconductor wafer may be reduced. In this case, chip jump is likely to occur during dicing.

The photoinitiator is not particularly limited. As the photoreaction initiator, for example, a photo radical generator or a photo cation generator can be used. The thermal reaction initiator is not particularly limited. Examples of the thermal reaction initiator include a thermal radical generator.
The photo radical generator is not particularly limited. Examples of commercially available photo radical generators include Irgacure 184, Irgacure 2959, Irgacure 907, Irgacure 819, Irgacure 651, Irgacure 369, and Irgacure 379 (all of which are manufactured by Ciba Specialty Chemicals), Benzoin Methyl. Examples include ether, benzoin ethyl ether, benzoin isopropyl ether, and lucillin TPO (manufactured by BASF Japan).

  As the photocation generator, onium salts or organometallic complexes can also be used. Examples of the onium salts include aromatic diazonium salts, aromatic halonium salts, and aromatic sulfonium salts. Examples of the organometallic complexes include iron-allene complexes, titanocene complexes, and arylsilanol-aluminum complexes.

  Examples of the thermal radical generator include organic peroxides or azo compounds. Examples of the organic peroxide include cumene hydroperoxide, diisopropylbenzene peroxide, di-t-butyl peroxide, lauryl peroxide, benzoyl peroxide, t-butylperoxyisopropyl carbonate, and t-butylperoxy-2- Examples thereof include ethyl hexanoate and t-amyl peroxy-2-ethyl hexanoate. Examples of the azo compound include 2,2′-azobis (isobutyronitrile), 1,1′-azobis (cyclohexanecarbonitrile), 2,2′-azobis (2,4-dimethylvaleronitrile), dimethyl 2, And 2'-azobis (2-methylpropionate).

  In addition to the acrylic polymer as the main component, the composition preferably further contains an oligomer having a double bond capable of reacting with an acrylic group and having a weight average molecular weight of 500 to 50,000. By containing such an oligomer, the storage elastic modulus of the non-adhesive layer formed by the crosslinked body obtained by crosslinking the composition mainly composed of the acrylic polymer can be easily controlled to 1 to 400 MPa. . Moreover, the said breaking elongation of the non-adhesion layer formed of the crosslinked body which bridge | crosslinked the composition which has an acrylic polymer as a main component can be easily controlled to 5-100%. If the weight average molecular weight of the oligomer is less than 500, the effect of blending the oligomer may not be sufficiently obtained. When the weight average molecular weight of the oligomer exceeds 50,000, the pick-up property of the semiconductor chip may be deteriorated.

  The oligomer is not particularly limited. The oligomer preferably has a flexible skeleton. Examples of the flexible skeleton include a polyether skeleton, a polyester skeleton, a butadiene skeleton, a polyurethane skeleton, a silicate skeleton, and a dicyclopentadiene skeleton.

  The oligomer is more preferably an acrylic oligomer having a polyether skeleton or a polyester skeleton. The skeleton having flexibility is a skeleton having a Tg of 25 ° C. or lower. An acrylic oligomer having a polyether skeleton or a polyester skeleton has high flexibility. Examples of the acrylic oligomer having a polyether skeleton or a polyester skeleton include polypropylene oxide diacrylate or a polyether-based urethane acrylic oligomer. Examples of these commercially available products include M-225 (manufactured by Toa Gosei Co., Ltd.) and UN-7600 (manufactured by Negami Kogyo Co., Ltd.).

  The double bond that can react with the acrylic group is not particularly limited. Examples of the group containing a double bond include a (meth) acryl group, a vinyl group, and an allyl group. Of these, an acrylic group is preferable. In this case, it is easy to control the storage elastic modulus and the breaking elongation within the specific range.

It is preferable that two or more double bonds capable of reacting with the acrylic group are contained in one molecule of the oligomer.
The oligomer having a double bond capable of reacting with the acrylic group is crosslinked with the above-mentioned acrylic polymer by heating or light irradiation. By this crosslinking, a skeleton derived from the oligomer is incorporated into the crosslinked body. For this reason, storage elastic modulus and breaking elongation can be controlled to a desired range.

  Further, two double bonds capable of reacting with the acrylic group may be present at both ends of the molecule, or may be present in the molecular chain. Among them, it is preferable that two acrylic groups exist at both ends of the molecule, or an acrylic group exists at both ends of the molecule and in the molecular chain.

  Examples of the polyether skeleton include a polypropylene oxide skeleton and a polyethylene oxide skeleton.

  Examples of the acrylic oligomer having the polyether skeleton and having an acrylic group only at both ends of the molecule include polypropylene oxide diacrylate and polyester urethane acrylic oligomer. Examples of these commercially available products include UA340P and UA4200 (manufactured by Shin-Nakamura Chemical Co., Ltd.), Aronix M-1600 and Aronix M-220 (manufactured by Toagosei Co., Ltd.).

As the acrylic oligomer, a tri- to 10-functional urethane acrylic oligomer is preferably used. In the case of less than trifunctional urethane acrylic oligomer, the flexibility of the non-adhesive layer becomes too high, and cutting waste tends to be generated during dicing. In the case of a urethane acrylic oligomer having more than 10 functionalities, the non-adhesive layer becomes brittle, and contamination easily occurs during dicing.
Examples of the 3 to 10 functional urethane acrylic oligomer having a polyether skeleton and a polyurethane skeleton include a urethane acryl oligomer having a polypropylene oxide main chain. As these commercial products, U-2PPA, U-4HA, U-6HA, U-15HA, UA-32P, U-324A, U-108A, U-200AX, UA-4400, UA-2235PE, UA-160TM And UA-6100 (manufactured by Shin-Nakamura Chemical Co., Ltd.), UN-7600, UN-7700, UN-333 and UN-1255 (manufactured by Negami Kogyo Co., Ltd.).

  The blending amount of the oligomer is not particularly limited. The oligomer is preferably blended at a ratio of 1 part by weight or more with respect to 100 parts by weight of the (meth) acrylic acid ester polymer. If the amount of the oligomer is less than 1 part by weight, the effect of blending the oligomer may not be sufficiently obtained. The oligomer is preferably blended at a ratio of 100 parts by weight or less with respect to 100 parts by weight of the acrylic polymer. When there is too much quantity of the said oligomer, an oligomer will not melt | dissolve and manufacture of a non-adhesion layer may be difficult.

In the case of an oligomer having an acrylic group at both ends, the oligomer is preferably blended at a ratio of 1 to 100 parts by weight, and blended at a ratio of 1 to 50 parts by weight with respect to 100 parts by weight of the acrylic polymer. More preferably.
In the case of a polyfunctional urethane acrylic oligomer, the oligomer is preferably blended at a ratio of 1 to 50 parts by weight with respect to 100 parts by weight of the (meth) acrylic acid ester polymer, and 1 to 30 parts by weight. It is more preferable to mix | blend in the ratio.

  The non-adhesive layer 4 preferably contains filler particles. By including the filler particles, the machinability can be improved. For this reason, adhesion of the cutting waste to the adhesive layer 3 or the semiconductor chip can be suppressed.

The average particle diameter of the filler particles is preferably 0.1 to 10 μm, more preferably 0.1 to 5 μm. If the average particle size is too large, the in-plane thickness of the non-adhesive layer 4 may vary. If the average particle size is too small, the machinability during dicing may not be sufficiently improved.
In the present specification, “average particle diameter” refers to a volume average diameter measured by a dynamic laser scattering method.

  The filler particles are not particularly limited. Silica or alumina can be used as the filler particles.

Examples of commercially available fillers include SC1050MJD, SC2050MB, SC4050MNA, SC4050MNB, and SC4050SEJ (all of which are manufactured by Admatechs).

  The filler is preferably blended at a ratio of 0.1 to 150 parts by weight with respect to a total of 100 parts by weight of the material constituting the non-adhesive layer 4 excluding the filler particles. If the amount of the filler particles is too large, the non-adhesive layer 4 may break during expansion. If the amount of the filler particles is too small, the machinability may not be sufficiently improved.

The non-adhesive layer 4 may contain an ultraviolet absorber.
The thickness of the non-adhesive layer 4 is not particularly limited. The non-adhesive layer 4 preferably has a thickness in the range of 30 to 100 μm. If the thickness is less than 30 μm, the expandability may be insufficient. If the thickness exceeds 100 μm, the thickness may be non-uniform. If the thickness is not uniform, dicing may not be performed properly.

(Release film 2)
The said release film 2 is used in order to protect the surface 3a to which the semiconductor wafer of the adhesive agent layer 3 is affixed. In addition, a release film does not necessarily need to be used.

  Examples of the release film 2 include polyester films such as polyethylene terephthalate films, polytetrafluoroethylene films, polyethylene films, polypropylene films, polymethylpentene films, polyolefin films such as polyvinyl acetate films, polyvinyl chloride films, and polyimide films. Such as plastic film. One side of these films may be subjected to a release treatment using a silicone release agent or a release agent having a long-chain alkyl group or the like. The release film 2 is preferably a synthetic resin film such as a polyethylene phthalate film. The synthetic resin film is excellent in smoothness and thickness accuracy.

  The release film may be a single layer film or a laminated film in which two or more of the films are laminated. When the release film is a laminated film, two or more different types of the above films may be laminated.

(Adhesive layer 3)
The adhesive layer 3 is used for bonding a semiconductor chip to a substrate, another semiconductor chip or the like. The adhesive layer 3 is cut along with the semiconductor wafer during dicing.

The adhesive layer 3 is formed of, for example, a curable resin composition containing an appropriate curable resin, a thermoplastic resin, or the like. Since the curable resin composition before curing is soft, it is easily deformed by an external force. Moreover, after obtaining the semiconductor chip, the adhesive layer 3 is cured by applying heat or light energy to the substrate or other adherend through the adhesive layer 3. Can be firmly joined.
The curable resin is not particularly limited. Examples of the curable resin include a thermosetting resin and a photocurable resin.

  The thermoplastic resin is not particularly limited. Examples of the thermoplastic resin include poly (meth) acrylate resin, polyester resin, polyvinyl alcohol resin, and polyvinyl acetate resin. These thermoplastic resins may be used independently and 2 or more types may be used together.

  The thermosetting resin is not particularly limited. As said thermosetting resin, an epoxy resin or a polyurethane resin etc. are mentioned, for example. These thermosetting resins may be used alone or in combination of two or more.

  The said photocurable resin is not specifically limited. Examples of the photocurable resin include an epoxy resin that is polymerized by a photocationic catalyst such as a photosensitive onium salt, or an acrylic resin having a photosensitive vinyl group. These photocurable resins may be used alone or in combination of two or more.

  As the curable resin, an epoxy resin, a polyester resin, methyl methacrylate, or a hot melt adhesive resin is preferably used. Examples of the hot-melt adhesive resin include poly (meth) acrylate resins having butyl acrylate as a main monomer unit.

  The adhesive layer 3 preferably contains an epoxy resin, a solid polymer having a functional group that reacts with the epoxy resin, and a curing agent. In this case, the bonding reliability between the semiconductor chip and the substrate bonded via the adhesive layer 3 or between the plurality of semiconductor chips is increased.

  The epoxy resin is not particularly limited. The epoxy resin is preferably an epoxy resin having a polycyclic hydrocarbon skeleton in the main chain. When an epoxy resin having a polycyclic hydrocarbon skeleton in the main chain is used, the cured product becomes rigid and the movement of molecules is inhibited. For this reason, the mechanical strength, heat resistance, and moisture resistance of the cured product are increased.

  The epoxy resin which has the said polycyclic hydrocarbon skeleton in a principal chain is not specifically limited. Examples of the epoxy resin having a polycyclic hydrocarbon skeleton in the main chain include dicyclopentadiene dioxide, dicyclopentadiene type epoxy resin, naphthalene type epoxy resin, tetrahydroxyphenylethane type epoxy resin, tetrakis (glycidyloxyphenyl). ) Ethane, or 3,4-epoxy-6-methylcyclohexylmethyl-3,4-epoxy-6-methylcyclohexane carbonate. Of these, dicyclopentadiene type epoxy resins or naphthalene type epoxy resins are preferably used.

  Specific examples of the dicyclopentadiene type epoxy resin include phenol novolac epoxy resins having a dicyclopentadiene skeleton. Specific examples of the naphthalene type epoxy resin include 1-glycidylnaphthalene, 2-glycidylnaphthalene, 1,2-diglycidylnaphthalene, 1,5-diglycidylnaphthalene, 1,6-diglycidylnaphthalene, 1,7-di. Examples thereof include glycidylnaphthalene, 2,7-diglycidylnaphthalene, triglycidylnaphthalene, 1,2,5,6-tetraglycidylnaphthalene, and the like.

  These epoxy resins having a polycyclic hydrocarbon skeleton in the main chain may be used alone or in combination of two or more. Moreover, the said dicyclopentadiene type | mold epoxy resin and naphthalene type | mold epoxy resin may each be used independently, and both may be used together.

  The minimum with a preferable weight average molecular weight of the epoxy resin which has the said polycyclic hydrocarbon skeleton in a principal chain is 500, and a preferable upper limit is 1000. If the weight average molecular weight is less than 500, the mechanical strength, heat resistance and moisture resistance of the cured product may not be sufficiently improved. When the said weight average molecular weight exceeds 1000, hardened | cured material may become too rigid and may become weak.

  The high molecular polymer having a functional group that reacts with the epoxy group is not particularly limited. Examples of the polymer include polymers having an amino group, a urethane group, an imide group, a hydroxyl group, a carboxyl group, an epoxy group, or the like. Among these, a polymer having an epoxy group is preferable. When a polymer having an epoxy group is used, the flexibility of the cured product is increased.

  Further, when an epoxy resin having a polycyclic hydrocarbon skeleton in the main chain and a polymer polymer having an epoxy group are used, the mechanical strength of the cured product by the epoxy resin having the polycyclic hydrocarbon skeleton in the main chain, While heat resistance and moisture resistance can be improved, the flexibility of the cured product is increased by the polymer having the epoxy group.

The polymer having an epoxy group preferably has an epoxy group on at least one of a terminal and a side chain (pendant position).
Examples of the polymer polymer having an epoxy group include an epoxy group-containing acrylic rubber, an epoxy group-containing butadiene rubber, a bisphenol type high molecular weight epoxy resin, an epoxy group-containing phenoxy resin, an epoxy group-containing acrylic resin, an epoxy group-containing urethane resin, or Examples thereof include an epoxy group-containing polyester resin. Especially, since the mechanical strength and heat resistance of hardened | cured material can be improved, an epoxy-group-containing acrylic resin is used suitably. These polymer polymers having an epoxy group may be used alone or in combination of two or more.

  The said hardening | curing agent is not specifically limited. Examples of the curing agent include heat curing acid anhydride curing agents such as trialkyltetrahydrophthalic anhydride, phenolic curing agents, amine curing agents, latent curing agents such as dicyandiamide, and cationic catalyst curing agents. Etc. These curing agents may be used alone or in combination of two or more.

  Specific examples of the thermosetting curing agent that is liquid at room temperature include, for example, acid anhydride-based curing such as methyltetrahydrophthalic anhydride, methylhexahydrophthalic anhydride, methylnadic anhydride, or trialkyltetrahydrophthalic anhydride. Agents. Especially, since it is hydrophobized, methyl nadic anhydride or trialkyltetrahydrophthalic anhydride is preferably used. These acid anhydride curing agents may be used alone or in combination of two or more.

  In order to adjust the curing speed, the physical properties of the cured product, and the like, a curing accelerator may be used together with the curing agent.

  The said hardening accelerator is not specifically limited. Examples of the curing accelerator include imidazole-based curing accelerators and tertiary amine-based curing accelerators. Of these, imidazole curing accelerators are preferably used. When an imidazole-type curing accelerator is used, the curing speed, the physical properties of the cured product, and the like can be easily adjusted. These hardening accelerators may be used independently and 2 or more types may be used together.

  The imidazole curing accelerator is not particularly limited. Examples of the imidazole-based curing accelerator include 1-cyanoethyl-2-phenylimidazole in which the 1-position of imidazole is protected with a cyanoethyl group, or a trade name “2MAOK-PW” (Shikoku Kasei Kogyo Co., Ltd.) whose basicity is protected with isocyanuric acid. Etc.). These imidazole type hardening accelerators may be used independently and 2 or more types may be used together.

  When using an acid anhydride curing agent in combination with a curing accelerator such as an imidazole curing accelerator, the addition amount of the acid anhydride curing agent should be less than or equal to the theoretically required equivalent to the epoxy group. Is preferred. If the addition amount of the acid anhydride curing agent is excessive, chlorine ions may be easily eluted from the cured product by moisture. For example, when elution components are extracted from a cured product using hot water, the pH of the extraction water is lowered to about 4 to 5, and a large amount of chloride ions extracted from the epoxy resin may be eluted. .

  In addition, when an amine curing agent and a curing accelerator such as an imidazole curing accelerator are used in combination, the addition amount of the amine curing agent may be less than or equal to the theoretically required equivalent to the epoxy group. preferable. If the added amount of the amine curing agent is excessive, chlorine ions may be easily eluted from the cured product of the curable resin composition by moisture. For example, when elution components are extracted from a cured product using hot water, the pH of the extraction water is high, the extraction water becomes basic, and a large amount of chloride ions extracted from the epoxy resin may be eluted. is there.

(Dicing film 5)
The dicine film 5 has the base material 5a and the adhesive layer 5b laminated on one surface of the base material 5a as described above. The pressure-sensitive adhesive layer 5b is a pressure-sensitive adhesive layer for attaching a dicing ring to which a dicing ring is attached.

  The base material 5a is not particularly limited. Specific examples of the substrate 5a include polyester films such as polyethylene terephthalate films, polytetrafluoroethylene films, polyethylene films, polypropylene films, polymethylpentene films, polyolefin films such as polyvinyl acetate films, polyvinyl chloride films, Examples thereof include a plastic film such as a polyimide film. Especially, since it is excellent in expandability and environmental impact is small, a polyolefin-type film is used suitably.

  The pressure-sensitive adhesive layer 5b is not particularly limited as long as the peeling force between the non-sticking layer 4 and the dicing film is larger than the peeling force between the pressure-sensitive adhesive layer 3 and the non-sticking layer 4. Specific examples of the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer 5b include an acrylic pressure-sensitive adhesive, a special synthetic rubber-based pressure-sensitive adhesive, a synthetic resin-based pressure-sensitive adhesive, and a rubber-based pressure-sensitive adhesive. Of these, a pressure-sensitive acrylic pressure-sensitive adhesive is preferable. When the pressure-sensitive acrylic pressure-sensitive adhesive is used, the dicing ring can be more easily peeled off from the pressure-sensitive adhesive layer 5b. Furthermore, the cost of the pressure-sensitive adhesive layer 5b can be reduced.

  FIG. 2 is a partially cutaway front sectional view of a dicing die bonding tape according to another embodiment of the present invention.

  The dicing die bonding tape 15 shown in FIG. 2 is a laminate in which the release film 2, the adhesive layer 3, the non-adhesive layer 4 and the dicing film 16 are laminated in this order. That is, the dicing die bonding tape 15 is configured in the same manner as the dicing die bonding tape 1 except that the configuration of the dicing film is different. In the dicing die-bonding tape 15, unlike the dicing film 5 described above, a dicing film 16 that is not provided with an adhesive layer is used.

  The dicing film may not have an adhesive layer. When the dicing film does not have the pressure-sensitive adhesive layer, the dicing film is made of, for example, a material having adhesive force.

  Next, a method for manufacturing a semiconductor chip when the above-described dicing die bonding tape 1 is used will be described with reference to FIGS.

  First, the dicing die bonding tape 1 and the semiconductor wafer 21 described above are prepared.

  As shown in FIG. 3, the planar shape of the semiconductor wafer 21 is circular. On the surface 21a of the semiconductor wafer 21, although not shown, circuits for forming individual semiconductor chips are formed in each region partitioned in a matrix by streets. The back surface 21b of the semiconductor wafer 21 is polished so as to have a predetermined thickness.

  The thickness of the semiconductor wafer 21 is preferably 30 μm or more. If the thickness of the semiconductor wafer 21 is less than 30 μm, cracks or the like may occur during grinding or handling, and the semiconductor chip may be damaged.

  In addition, the semiconductor wafer 21 is divided | segmented for every area | region divided into matrix form at the time of the dicing mentioned later.

  As shown in FIG. 4, the semiconductor wafer 21 is turned over, and the semiconductor wafer 21 turned over is placed on the stage 22. That is, the semiconductor wafer 21 is placed on the stage 22 from the surface 21a side. An annular dicing ring 23 is provided on the stage 22 at a position spaced apart from the outer peripheral side surface 21 c of the semiconductor wafer 21. The height of the dicing ring 23 is equal to or slightly lower than the total thickness of the semiconductor wafer 21, the adhesive layer 3, and the non-adhesive layer 4.

  Next, the semiconductor wafer 21 is bonded to the surface 3 a of the adhesive layer 3 of the dicing die bonding tape 1. FIG. 5 is a front sectional view showing a state when the semiconductor wafer 21 is bonded to the adhesive layer 3.

The dicing film 5 has an extension portion 5 c that extends outward from the outer peripheral side surfaces of the adhesive layer 3 and the non-adhesive layer 4. As shown in FIG. 5, the release film 2 of the dicing die bonding tape 1 is peeled to expose the surface 3 a of the adhesive layer 3 and the adhesive layer 5 b of the extension 5 c of the dicing film 5.
After the release film 2 is peeled off or while the release film 2 is peeled off, the adhesive layer 5b of the extension portion 5c of the exposed dicing film 5 is stuck on the dicing ring 23. Furthermore, the exposed adhesive layer 3 is bonded to the back surface 21 b of the semiconductor wafer 21.

  FIG. 6 is a front sectional view showing a state where the semiconductor wafer 21 is bonded to the adhesive layer 3.

  The adhesive layer 3 is bonded to the entire back surface 21 b of the semiconductor wafer 21. The extension portion 5 c of the dicing film 5 is supported by the dicing ring 23 so that an extra force is not applied to the semiconductor wafer 21.

  Next, as shown in a front sectional view in FIG. 7, the semiconductor wafer 21 to which the adhesive layer 3 is bonded is taken out from the stage 22 and turned over. At this time, the dicing ring 23 is taken out while being attached to the dicing film 5. The taken-out semiconductor wafer 21 is turned over so that the surface 21 a faces upward, and placed on another stage 24.

Next, the semiconductor wafer 21 to which the adhesive layer 3 is bonded is diced and divided into individual semiconductor chips.
A process of dicing the semiconductor wafer 21 to which the adhesive layer 3 is bonded and dividing the semiconductor wafer 21 into individual semiconductor chips 31 will be described with reference to FIGS.

  FIGS. 8A to 8D are partial cutaway front cross-sectional views showing the step of dividing into individual semiconductor chips 31 step by step.

  8A to 8D, dicing is performed in two stages (step cut) in order to prevent damage to the semiconductor wafer 21 due to dicing. 8A and 8B show the first stage of dicing, and FIGS. 8C and 8D show the second stage of dicing. Note that dicing may be performed in one step as long as damage to the semiconductor wafer 21 during dicing can be prevented.

  As shown in FIG. 8A, first, the first cutting blade 41 of the dicing apparatus is inserted from the front surface 21a of the semiconductor wafer 21 to a position that does not reach the back surface 21b of the semiconductor wafer 21, for example. Thereafter, by removing the first cutting blade 41, a first cutting portion 42 is formed as shown in FIG. 9B.

  Next, as shown in FIG. 8C, a second cutting blade 43 that is thinner than the first cutting blade 41 of the dicing apparatus is inserted into the center of the first cutting portion 42. The second cutting blade 43 is inserted to a position deeper than the first cutting portion 42. The insertion depth of the second cutting blade 43 is not particularly limited as long as it penetrates the adhesive layer 3. It is preferable that the 2nd cutting blade 43 is inserted to the position which does not penetrate the non-adhesion layer 4, for example, the position below half of the thickness of the non-adhesion layer 4.

  By removing the second cutting blade 43, as shown in FIG. 8D, the second cutting having a cutting width narrower than that of the first cutting portion 42 at a position deeper than the first cutting portion 42. A portion 44 is formed.

  The method for dicing the semiconductor wafer is not particularly limited. Examples of the dicing method include a single cut that is cut with one blade, a step cut that is cut with the two blades described above, or a bevel cut that is cut with two blades. In the bevel cut, a blade having a V-shaped cross section is used to cut the surface of the semiconductor wafer. Among these, step cut is preferable because the semiconductor wafer is hardly damaged during dicing.

  Further, as a semiconductor wafer dicing method, a laser irradiation method may be used. When the semiconductor wafer is cut together with the adhesive layer 3 by laser light irradiation, the laser light is irradiated so as to reach the non-adhesive layer 4. In the case of using a conventional dicing film such as an ultraviolet curable type or a radiation curable type, if dicing is performed by irradiating laser light, the dicing film reacts with the energy of the laser light and may be fused to another layer. there were. In this case, the semiconductor chip cannot be picked up from the dicing film.

  On the other hand, in this embodiment, since the non-adhesion layer 4 is difficult to react by irradiation with laser light, the non-adhesion layer 4 is difficult to fuse to the adhesive layer 3. Therefore, even when dicing using laser light is performed, the semiconductor chip can be picked up without difficulty.

  After the semiconductor wafer is diced and divided into individual semiconductor chips, the dicing film is stretched to extend the distance between the divided individual semiconductor chips. Thereafter, the adhesive layer 3 to which the semiconductor chip is bonded is peeled from the non-adhesive layer 4 and the semiconductor chip 31 shown in FIG. 9 is taken out.

  In addition, as a method of peeling the adhesive layer 3 to which the semiconductor chip is bonded from the non-adhesive layer 4, a method of pushing up from the back side of the semiconductor wafer using a multi-pin, a method of pushing up using a multi-stage pin, a semiconductor Examples include a method of vacuum peeling from the surface side of the wafer, a method of utilizing ultrasonic vibration, and the like.

(Examples 1-11 and Comparative Examples 1-5)
In order to produce a non-adhesive layer, any one of acrylic polymers 1 to 5 shown in Table 1 below was used. A non-adhesive layer was formed from a composition containing any one of the acrylic polymers 1 to 5 as a main component.
First, the following acrylic polymers were synthesized.

(Acrylic polymer 1)
95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, 0.2 parts by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution) as a photo radical generator, and 0.01 parts by weight of lauryl mercaptan Was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Further, 3.5 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI) is reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer (acrylic polymer 1). Obtained. The obtained acrylic polymer 1 had a weight average molecular weight of 700,000 and an acid value of 0.86 (mgKOH / g).

(Acrylic polymer 2)
94 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, 1 part by weight of acrylic acid, 0.2 part by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution), and lauryl 0.01 parts by weight of mercaptan was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Further, 3.5 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI) is reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer (acrylic polymer 2). Obtained. The resulting acrylic polymer 2 had a weight average molecular weight of 760,000 and an acid value of 6.73 (mgKOH / g).

(Acrylic polymer 3)
97 parts by weight of 2-ethylhexyl acrylate, 3 parts by weight of 2-hydroxyethyl acrylate, 0.2 parts by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution) as a photo radical generator, and 0.01 parts by weight of lauryl mercaptan Was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Furthermore, 1.8 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI) is reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer (acrylic polymer 3). Obtained. The obtained acrylic polymer 3 had a weight average molecular weight of 890,000 and an acid value of 0.58 (mgKOH / g).

(Acrylic polymer 4)
99 parts by weight of 2-ethylhexyl acrylate, 1 part by weight of 2-hydroxyethyl acrylate, 0.2 part by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution) as a photo radical generator, and 0.01 part by weight of lauryl mercaptan Was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Furthermore, 0.9 parts by weight of 2-methacryloyloxyethyl isocyanate (produced by Showa Denko KK, Karenz MOI) is reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer (acrylic polymer 4). Obtained. The weight average molecular weight of the obtained acrylic polymer 4 was 730,000, and the acid value was 0.34 (mgKOH / g).

(Acrylic polymer 5)
95 parts by weight of 2-ethylhexyl acrylate, 5 parts by weight of 2-hydroxyethyl acrylate, 0.2 parts by weight of Irgacure 651 (manufactured by Ciba Geigy Co., Ltd., 50% ethyl acetate solution) as a photo radical generator, and 0.01 parts by weight of lauryl mercaptan Was dissolved in ethyl acetate to obtain a solution. Polymerization was performed by irradiating this solution with ultraviolet rays to obtain an ethyl acetate solution of the polymer. Furthermore, 7 parts by weight of 2-methacryloyloxyethyl isocyanate (manufactured by Showa Denko KK, Karenz MOI) was reacted with 100 parts by weight of the solid content of this solution to obtain an acrylic copolymer (acrylic polymer 5). . The resulting acrylic polymer 5 had a weight average molecular weight of 920,000 and an acid value of 1.00 (mgKOH / g).

  In addition, the following compounds were prepared as a material which comprises the composition for forming a non-adhesion layer.

Photopolymerization initiator: Irgacure 651 (manufactured by Ciba Chemical Specialty)
(Filler)
SC4050: manufactured by Admatechs, silica filler, average particle size: 1 μm
SC2050: manufactured by Admatechs, silica filler, average particle size: 0.5 μm
SC1050: manufactured by Admatechs, silica filler, average particle size: 0.3 μm
(Oligomer)
U324A: manufactured by Shin-Nakamura Chemical Co., Ltd., urethane acrylic oligomer (10 functional urethane acrylic oligomer), weight average molecular weight: 1,300
UA340P: manufactured by Shin-Nakamura Chemical Co., Ltd., urethane acrylic oligomer (bifunctional), weight average molecular weight: 12,000
UN7600: manufactured by Negami Kogyo Co., Ltd., urethane acrylic oligomer (bifunctional), weight average molecular weight: 11,500
UN7700: manufactured by Negami Kogyo Co., Ltd., urethane acrylic oligomer (bifunctional), weight average molecular weight: 20,000
EBECRYL12: manufactured by Daicel Cytec, polypropylene glycol triacrylate, weight average molecular weight: 780

Example 1
100 parts by weight of the acrylic polymer 1, 1 part by weight of Irgacure 651, and 15 parts by weight of U324A as a urethane acrylic oligomer were blended to obtain a composition. The obtained composition was irradiated with light having an energy of 4000 mJ / cm ² using two 160 W mercury lamps, and the composition was cured to obtain a non-adhesive film as a non-adhesive layer. The storage elastic modulus at 23 ° C. as the temperature at the time of picking up the semiconductor chip of the non-adhesive layer thus obtained and the elongation at break were measured by the following methods.

  1) Measurement of storage elastic modulus: A completely cured non-adhesive layer having a thickness of 0.5 mm and a width of 5 mm was cut into a width of 3 cm to obtain a test sample. The storage elastic modulus at 23 ° C. of the test sample was determined under the conditions of 10 Hz and strain 0.1% using DVA-200 manufactured by IT Measurement.

  2) Elongation at break: A completely cured non-adhesive layer having a thickness of 0.5 mm, a width of 5 mm and 7 cm was prepared as a test sample. Using a tensile tester AG-IS manufactured by Shimadzu Corporation, the test sample was pulled at a rate of 300 mm / min at 23 ° C., and the elongation at the time of breaking was measured to obtain the breaking elongation.

Using the non-adhesive layer, a dicing die bonding tape was produced in the following manner.
G-2050M (Nippon Yushi Co., Ltd., epoxy-containing acrylic polymer, weight average molecular weight Mw 200,000) 15 parts by weight, EXA-7200HH (Dainippon Ink, dicyclopentadiene type epoxy) 70 parts by weight, HP-4032D ( 15 parts by weight of Dainippon Ink Co., Ltd., naphthalene type epoxy), 38 parts by weight of YH-309 (manufactured by Japan Epoxy Resin Co., Ltd., acid anhydride curing agent), and 8 weights of 2 MAOK-PW (manufactured by Shikoku Kasei Co., Ltd., imidazole) Part, 2 parts by weight of S320 (manufactured by Chisso Corporation, aminosilane) and 4 parts by weight of MT-10 (manufactured by Tokuyama Corporation, surface hydrophobized fumed silica) were blended to obtain a blend. The obtained formulation was added to methyl ethyl ketone (MEK) as a solvent so as to have a solid content of 60%, and stirred to obtain a coating solution. The obtained coating liquid was applied on the release film so as to have a thickness of 40 μm, and was dried by heating in an oven at 110 ° C. for 3 minutes to form an adhesive layer on the release film.

  The non-adhesive layer was laminated at 60 ° C. on the surface opposite to the surface on which the release film of the adhesive layer was laminated to obtain a laminate. After cutting the laminate into a circle, PE tape # 6318-B (adhesive film made by Sekisui Chemical Co., Ltd.) as a dicing film on the surface opposite to the surface on which the adhesive layer of the non-adhesive layer is laminated. A pressure-sensitive adhesive film in which a rubber-based pressure-sensitive adhesive layer having a thickness of 10 μm was formed on one side of a polyethylene substrate having a thickness of 70 μm was attached from the pressure-sensitive adhesive layer side. Then, the dicing film was cut out circularly so that it might have a diameter larger than the diameter of the said adhesive agent layer. In this manner, a dicing die bonding tape having a four-layer laminated structure in which a release film / adhesive layer / non-adhesive layer / dicing film was laminated in this order was produced.

(Examples 2-11 and Comparative Examples 1-5)
As shown in Tables 2 and 3 below, a non-adhesive layer was obtained in the same manner as in Example 1 except that the material type and blending ratio of the composition for forming the non-adhesive layer were changed.

(Evaluation)
The results of measuring the storage elastic modulus and elongation at break at 23 ° C. of the non-adhesive layer as described above are shown in Tables 2 and 3 below.

  The peeling force between the non-adhesive layer and the adhesive layer of the obtained dicing die-bonding tape was measured as follows. The results are shown in Tables 2 and 3 below.

  Measurement of peel force: A non-adhesive layer was laminated at 60 ° C. on one surface of the adhesive layer. Next, a stainless steel plate was affixed to the surface opposite to the surface to which the non-adhesive layer of the adhesive layer was affixed. Thereafter, the adhesive layer and the stainless steel plate were sufficiently bonded to obtain a test specimen. Next, the test body was fixed so that the adhesive layer was on the bottom and the non-stick layer was on the top. A force was applied to the non-adhesive layer in the direction of 180 degrees with respect to the interface between the adhesive layer and the non-adhesive layer at a speed of 300 mm / min, and the non-adhesive layer was peeled from the adhesive layer. At this time, the force required for peeling was measured under the condition of a measurement width of 25 mm using AGS-100D manufactured by Shimadzu Corporation, and the average value of the obtained values was taken as the peeling force.

Furthermore, evaluation at the time of manufacturing a semiconductor chip was performed as follows.
The release film of the dicing die-bonding tape was peeled off from the adhesive layer to expose the adhesive layer. The exposed adhesive layer was laminated on one surface of an 8 inch diameter silicon wafer (thickness 80 μm) at a temperature of 60 ° C. to prepare an evaluation sample.

  The evaluation sample was diced into a chip size of 10 mm × 10 mm at a feed rate of 50 mm / sec using a dicing apparatus DFD651 (manufactured by Disco). The presence or absence of chips flying during dicing was evaluated. In addition, the presence or absence of whiskers and the presence or absence of cracks in the semiconductor chip were observed. Tables 2 and 3 show the results. The meanings of the evaluation symbols in Tables 2 and 3 are as follows.

○: No tip fly, whiskers and cracks △: One of tip fly, whiskers, and cracks ×: Chip fly, whiskers and cracks There are any two. After dicing, using a die bonder best D-02 (manufactured by Canon Machinery Co., Ltd.), continuous pickup of divided semiconductor chips under the conditions of a collet size of 8 mm square, a push-up speed of 5 mm / sec, and a pickup temperature of 23 ° C. And evaluated whether pickup was possible. Tables 2 and 3 show the results. The meanings of the evaluation symbols in Tables 2 and 3 are as follows.

○: The percentage of semiconductor chips that could not be picked up was 0%
Δ: Ratio of semiconductor chips that could not be picked up 1-15%
×: The percentage of semiconductor chips that could not be picked up was 16% or more

Claims (8)

A dicing die bonding tape comprising an adhesive layer and a non-adhesive layer laminated on the adhesive layer,
A base material and a pressure-sensitive adhesive layer laminated on one side of the base material, from the pressure-sensitive adhesive layer side to the surface of the non-adhesive layer opposite to the surface on which the adhesive layer is laminated Further comprising a laminated dicing film,
The non-adhesive layer is formed of a composition containing an acrylic polymer as a main component,
A dicing die-bonding tape, wherein the non-adhesive layer has a storage elastic modulus of 1 to 400 MPa and a breaking elongation of 5 to 100% at a temperature at which a semiconductor chip is picked up.   The dicing die-bonding tape according to claim 1, wherein the non-adhesive layer is formed of a crosslinked body obtained by crosslinking a composition containing an acrylic polymer as a main component.   The dicing die-bonding tape of Claim 1 or 2 which has the peeling force between the said non-adhesion layer and the said adhesive agent layer in the range of 1-15 N / m.   The dicing die according to any one of claims 1 to 3, wherein the composition further contains an oligomer having a double bond capable of reacting with an acrylic group and having a weight average molecular weight of 100 to 50,000. Bonding tape.   The oligomer is at least one skeleton selected from the group consisting of a polyether skeleton, a polyester skeleton, a butadiene skeleton, a polyurethane skeleton, a silicate skeleton, an isoprene skeleton, a polyalkyl skeleton, a polyacrylonitrile skeleton, a polycarbonate skeleton, and a dicyclopentadiene skeleton. The dicing die-bonding tape according to claim 4, comprising:   The dicing die bonding tape according to any one of claims 1 to 5, wherein the non-adhesive layer contains filler powder having an average particle size of 0.1 to 10 µm. Preparing a dicing die bonding tape according to any one of claims 1 to 6 and a semiconductor wafer;
Dicing-bonding the semiconductor wafer to the surface of the adhesive layer of the die bonding tape opposite to the surface on which the non-adhesive layer is laminated;
Dicing the semiconductor wafer bonded to the dicing die bonding tape together with the adhesive layer, and dividing the semiconductor wafer into individual semiconductor chips;
A method of manufacturing a semiconductor chip, comprising: after dicing, peeling off the adhesive layer to which the semiconductor chip is bonded from the non-adhesive layer and taking out the semiconductor chip together with the adhesive layer. The method for manufacturing a semiconductor chip according to claim 7 , wherein the semiconductor chip is taken out without changing a peeling force between the adhesive layer and the non-adhesive layer after dicing.

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