JP5293128B2 - Nanostructure manufacturing method and magnetic storage medium manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To produce magnetic particles having a nano-size in a desired shape and size. <P>SOLUTION: A die 510 made of a resist 512 which is dissolved by dissolution processing by an organic solvent and includes projecting and recessed parts of a nano size is prepared (step S101 to a step S102), Co films and Pd films are alternately layered on the die 510 by an MBE (molecular beam epitaxy) method to form a magnetic film 530 (a step S103) and the magnetic film 530 deposited in the recessed parts of the die 510 is taken out by removing the resist 512 by dissolution processing by the organic solvent to obtain the magnetic particles 211. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a nanostructure manufacturing method for manufacturing a nanosized structure, a nanostructure manufactured by such a nanostructure manufacturing method, a magnetic nanostructure manufactured by such a nanostructure manufacturing method, Magnetic storage medium manufacturing method for manufacturing magnetic storage medium using structure of nano-sized magnetic material manufactured by such nanostructure manufacturing method, magnetic storage medium manufactured by such magnetic storage medium manufacturing method The present invention relates to an information storage device on which such a magnetic storage medium is mounted.

  Hard disk drives (HDD) have become the mainstream of information storage devices as mass storage devices capable of high-speed data access and high-speed transfer. With respect to this HDD, the surface recording density has been increasing at a high annual rate so far, and further improvement in recording density is still required.

  In recent years, nano-sized magnetic particles formed of magnetic materials such as FePt, which are expected to have high recording density and stable information recording and information reproduction as next-generation magnetic storage media mounted on such HDDs in recent years Magnetic storage media having a structure in which are arranged on a substrate have been studied.

  Here, as a general magnetic storage medium, there is a so-called continuous medium having a recording layer continuously formed of a magnetic material on a substrate, or a plurality of tracks continuously formed of a magnetic material on a substrate. In addition, there are so-called discrete media in which each track is separated by a non-magnetic material, and so-called bit patterned media in which a plurality of bits each of which is formed of a magnetic material and records a minimum unit of information are arranged at equal intervals. Are known. Here, the structure of the above-mentioned next-generation magnetic storage medium can be applied to any of these continuous media, discrete media, and bit patterned media.

  For example, in application to a continuous medium, a recording layer in a continuous medium can be obtained by arranging the above magnetic particles in a dense structure on a substrate. Also, in the application to discrete media, a plurality of tracks on the discrete media can be obtained by arranging the magnetic particles as described above in a dense structure only at the locations to be tracks. Furthermore, in application to bit patterned media, each magnetic particle as described above is used as a bit in which a minimum unit of information is recorded.

  If such a next-generation magnetic storage medium structure is realized, the individual magnetic particles are nano-sized and very small, and the magnetic particles are regularly arranged on the substrate. High resistance to thermal fluctuations on magnetic storage media and reduction of medium noise during information recording and information reproduction are realized, and consequently high recording density and stable information recording and information reproduction are realized. It will be.

  Here, conventionally, many of such nano-sized magnetic particles are produced by chemical synthesis or the like, and in most cases, the particle shape is spherical.

  In general, in a magnetic storage medium, the easy axis of magnetization is aligned in, for example, a direction perpendicular to the medium surface or a direction parallel to the medium surface over the entire recording layer in which information is recorded as the magnetization direction. Need to be. However, it is very difficult to arrange spherical magnetic particles on a substrate with the easy magnetization axes of the magnetic particles aligned in one direction. Thus, the fact that many of the nano-sized magnetic particles obtained at present are spherical, is a major factor that hinders the realization of a magnetic storage medium by such an array of magnetic particles. For example, in the case of a disk-shaped particle or the like, it is relatively easy to arrange on the substrate so that the thickness direction of the disk is perpendicular to the substrate surface. For this reason, a manufacturing method capable of manufacturing nano-sized magnetic particles in a desired shape such as a disk shape is desired.

  In addition, in the above-described application to bit patterned media, the size of each bit when the shape of each bit is assumed to be spherical is the size of the head that performs information recording and information reproduction for each bit. Accordingly, the diameter is preferably on the order of several tens of nm. However, in the method for producing nano-sized magnetic particles by the above-described chemical synthesis or the like, it is not easy to produce particles having a size exceeding 10 nm, and the nano-sized magnetic particles have not only a desired shape but also a desired shape. There is a demand for a method of manufacturing magnetic particles that can be manufactured in size.

  The magnetic properties of magnetic particles in a magnetic recording medium need to have greater magnetocrystalline anisotropy as they become finer in order to maintain thermal stability. However, the magnetic field intensity required for magnetization reversal also increases, making it difficult to record with a magnetic head that is miniaturized with the recording density. Therefore, in recent magnetic recording continuous media, attempts have been made to achieve desired characteristics with a composite material in which a magnetic layer that maintains thermal stability and a magnetic layer that facilitates recording are combined. For example, a graded medium and an ECC medium are examples thereof, and it has been proposed to combine and combine a layer having a high magnetocrystalline anisotropy and a layer having a low magnetocrystalline anisotropy with an appropriate exchange coupling force. Such a structure needs to be achieved inside the magnetic particle, but in the conventional particle forming method, the surface is chemically modified after the particle is formed, or a layer is formed. Methods have been taken to change the material. With such a method, it is difficult to direct the crystal or the easy magnetization axis in a specific direction with respect to the shape, and a new method is required.

  Here, a technique for producing nano-sized particles with a desired shape and size using a nano-sized template formed by lithography has been proposed (see, for example, Patent Document 1). According to this technique, since a template having a desired shape and size can be formed by a lithography method, particles having such a desired shape and size can be obtained. However, the technique described in Patent Document 1 described above is to form a film of metal oxide or the like on a nano-sized template, and then remove the template to obtain nano-sized particles. With this technique, it is impossible to produce magnetic particles having magnetic anisotropy due to, for example, a crystal structure using epitaxial growth in a multilayer structure.

As a magnetic storage medium having a nano-sized structure that can be realized at present, the nano-sized magnetic particles are not arranged on the substrate as described above. For example, nano-sized holes are formed on the surface of the substrate by anodic oxidation or the like. Examples thereof include a magnetic storage medium formed by forming an array and filling each hole with a magnetic material by a plating method or the like.
JP 2004-351608 A

  However, uniform nano-sized holes of uniform size are provided by anodic oxidation over a wide range such as the entire surface of the magnetic disk mounted on the hard disk device, and any alloy material crystal such as FePt is uniform. No technology has been established for producing a medium by epitaxial growth. In addition, as a method of forming such nano-sized holes with high accuracy, electron beam drawing or the like can be mentioned. However, it takes time to form nano-sized holes over a wide range as described above by electron beam drawing. It will pass.

  In the end, a magnetic storage medium having a nano-sized structure is preferably a nano-sized magnetic particle arrayed on a substrate. However, a nano-sized magnetic particle having a shape and size suitable for such a magnetic storage medium is manufactured. The lack of a realistic method that can do this is a bottleneck in the realization of such a magnetic storage medium.

  In view of the above circumstances, the present case is a nanostructure manufacturing method capable of manufacturing nanosized magnetic particles in a desired shape and size, a nanostructure manufactured by such a nanostructure manufacturing method, such a Magnetic nanostructure manufactured by nanostructure manufacturing method, magnetic storage medium manufacturing method for manufacturing magnetic storage medium using such nanostructure manufacturing method, manufactured by such magnetic storage medium manufacturing method It is an object of the present invention to provide a magnetic storage medium and an information storage device equipped with such a magnetic storage medium.

The basic form of the nanostructure manufacturing method that achieves the above object is as follows.
A mold creation process for creating a mold having nano-sized irregularities with a predetermined material,
The particles of the resistant material having higher resistance to the removal process for removing the material constituting the mold are blown toward the mold, and the resistant material is deposited on the convex portion and / or in the concave portion of the mold. The deposition process,
And a mold removing process for removing the mold in which the resistant material is deposited in the recess by the removing process.

  Here, the above-described deposition process means a technique for depositing a material on a mold by using a material deposition technique such as a molecular beam epitaxy (MBE) method or a sputtering method. To do.

  According to the basic form of this nanostructure manufacturing method, a structure having a shape and a size corresponding to the shape and size of the recess of the mold is manufactured using a mold having a nanosize recess. For this reason, the particle | grains of a desired shape and size can be obtained as a nanosize structure by forming the shape and size of the recessed part in the type | mold into a desired shape and size. Further, according to the basic form of this nanostructure manufacturing method, the material is deposited on the mold using a material deposition technique such as MBE or sputtering. According to these techniques, a magnetic material is used as the material, and the magnetic material is uniformly epitaxially grown and deposited with a desired crystal structure on the mold, so that it has an easy axis of magnetization in a desired direction. A deposited layer having magnetic properties can be formed. And the nano-sized magnetic particle which has such a desirable magnetic characteristic can be obtained by taking out the part accumulated in the said recessed part among the deposition layers. That is, according to the basic form of this nanostructure manufacturing method, nanosized magnetic particles can be manufactured in a desired shape and size, and furthermore, the magnetic particles can have desired magnetic properties.

In addition, the basic form of the nanostructure that achieves the above object is as follows:
A mold having nano-sized irregularities is made of a predetermined material, and particles of a resistant material having higher resistance to the removal treatment that removes the material constituting the mold are blown toward the mold, and the resistant material is removed. Depositing on the convex part and / or in the concave part of the mold, removing the mold on which the resistant material is deposited on the convex part and / or in the concave part by the removing process, and remaining after the removing process; It consists of the said resistant material deposited on the said convex part or in the said recessed part.

In addition, the basic form of the magnetic nanostructure that achieves the above object is as follows:
Create a mold with nano-sized irregularities with a predetermined material, and blow particles of magnetic material having higher resistance to the removal treatment that removes the material constituting the mold toward the mold, Depositing on the convex part and / or in the concave part of the mold, removing the mold on which the magnetic material is deposited on the convex part and / or in the concave part by the removing process, and remaining after the removing process; It consists of the said magnetic material deposited on the said convex part or in the said recessed part.

  According to these basic forms, it is possible to easily realize a desired shape, size, and magnetic characteristics of the nanostructure and the magnetic nanostructure.

In addition, the basic form of the magnetic storage medium manufacturing method that achieves the above object is as follows:
A mold making process for creating a mold having a nano-sized recess with a predetermined material;
A deposition process in which particles of a magnetic material having higher resistance to the removal treatment for removing the material constituting the mold are blown toward the mold, and the magnetic material is deposited in the recess of the mold;
A mold removal process for removing the mold in which the magnetic material is deposited in the recess by the removal process;
And an arrangement process in which the structure made of the magnetic material deposited in the recess and remaining after the mold removal process is arranged on a predetermined substrate.

  According to the basic form of this magnetic storage medium manufacturing method, a nano-sized structure made of a magnetic material can be obtained by the above-described nano-structure manufacturing method capable of manufacturing nano-sized magnetic particles in a desired shape and size. It is done. For this reason, since it is possible to obtain magnetic particles having a desirable shape suitable for arranging on the substrate with the easy axis of magnetization aligned in one direction, such as a disk shape, as a nano-sized structure, A preferable magnetic storage medium in which magnetic particles are reliably arranged on the substrate and high resistance to thermal fluctuation and reduction of medium noise are realized by a nano-sized structure can be obtained.

In addition, the basic form of the magnetic storage medium that achieves the above object is as follows:
A substrate,
A mold having a nano-sized recess is made of a predetermined material, and particles of a magnetic material having higher resistance to the removal process for removing the material constituting the mold are blown toward the mold, and the magnetic material is A structure made of the magnetic material deposited in the concave portion, which is deposited in the concave portion of the mold, the mold in which the magnetic material is deposited in the concave portion is removed by the removal treatment, and remains after the removal treatment. And a structure arranged on the substrate.

  In the basic form of the magnetic storage medium, the structure is manufactured by the above-described nanostructure manufacturing method capable of manufacturing nanosized magnetic particles in a desired shape and size. For this reason, according to this basic form of the magnetic storage medium, such an arrangement of the structures (magnetic particles) realizes high resistance to thermal fluctuations and reduction of medium noise, which can further improve the recording density. It becomes.

In addition, the basic form of the information storage device that achieves the above object is as follows:
A substrate,
A mold having a nano-sized recess is made of a predetermined material, and particles of a magnetic material having higher resistance to the removal process for removing the material constituting the mold are blown toward the mold, and the magnetic material is A structure made of the magnetic material deposited in the concave portion, which is deposited in the concave portion of the mold, the mold in which the magnetic material is deposited in the concave portion is removed by the removal treatment, and remains after the removal treatment. A magnetic storage medium comprising structures arranged on the substrate; and
A head for recording and / or reproducing information on the magnetic storage medium;
It is provided with.

  According to the basic form of the information storage device, since the above-described magnetic storage medium capable of further improving the recording density is provided, it is possible to record information with a further large capacity.

  As described above, according to the present case, a nanostructure manufacturing method capable of manufacturing nanosized magnetic particles in a desired shape and size, and a nanostructure manufactured by such a nanostructure manufacturing method , Magnetic nanostructure manufactured by such a nanostructure manufacturing method, a magnetic storage medium manufacturing method for manufacturing a magnetic storage medium using such a nanostructure manufacturing method, and such a magnetic storage medium manufacturing method And an information storage device equipped with such a magnetic storage medium can be obtained.

  Hereinafter, specific embodiments of the nanostructure manufacturing method, the nanostructure, the magnetic nanostructure, the magnetic storage medium manufacturing method, the magnetic storage medium, and the information storage device described above with reference to the basic embodiment will be described with reference to the drawings. I will explain.

  FIG. 1 is a diagram showing a hard disk device (HDD) corresponding to a specific embodiment of the information storage device described in the basic mode.

  A housing 101 of the HDD 10 shown in FIG. 1 has a head gimbal having a magnetic disk 200 mounted on a rotating shaft 102 and rotating, and a magnetic head 103 for recording and reproducing information with respect to the magnetic disk 200. The assembly 104, the head gimbal assembly 104 is fixed, and a carriage arm 106 that moves along the surface of the magnetic disk 200 around the arm shaft 105 and an arm actuator 107 that drives the carriage arm 106 are housed. Here, the magnetic disk 200 corresponds to an example of the magnetic storage medium in the basic form described above, and the magnetic head 103 corresponds to an example of the head in the basic form.

  When recording information on the magnetic disk 200 and reproducing information recorded on the magnetic disk 200, the carriage arm 106 is driven by the arm actuator 107, and the magnetic head 103 is moved to a desired position on the rotating magnetic disk 200. Positioned. The magnetic head 103 sequentially records a plurality of pieces of information on the magnetic disk 200 that passes directly under the rotation.

  In the present embodiment, a perpendicular magnetic recording method in which information is recorded by magnetization in a direction perpendicular to the disk surface of the magnetic disk 200 is employed. For this reason, the magnetic disk 200 has a recording layer described later having magnetic anisotropy with the direction perpendicular to the disk surface as the easy axis of magnetization. Information is recorded on the recording layer using two states, a state in which the magnetization is directed to the front side of the magnetic disk 200 and a state directed to the back side.

  At the time of recording information, an electrical recording signal is input to a magnetic head close to the magnetic disk 200, and a magnetic field having a polarity corresponding to the recording signal is applied to the magnetic disk 200 by the magnetic head 103. Information is recorded when the magnetization in the recording layer is directed to either the front side or the back side of the magnetic disk 200 according to the polarity of the applied magnetic field. In reproducing information, the magnetic head 103 detects a minute magnetic field generated by magnetization in the recording layer, and information is extracted as an electric reproduction signal corresponding to the polarity of the minute magnetic field.

  Here, in this embodiment, the recording layer of the magnetic disk 200 is formed by an array of a large number of nano-sized magnetic particles.

  FIG. 2 is a diagram schematically showing the internal structure of the magnetic disk shown in FIG.

  A part (a) of FIG. 2 is an enlarged top view schematically showing a part of the recording layer 210 of the magnetic disk 200 shown in FIG. 1, and part (b) of FIG. It is an expanded sectional view about a part.

  The magnetic disk 200 includes a disk substrate 201 made of a nonmagnetic material, a backing layer 202 formed of a soft magnetic material on the disk substrate 201, an intermediate layer 203 formed of a nonmagnetic material on the backing layer 202, and an intermediate layer 203. , A recording layer 210 formed by arranging a large number of magnetic particles 211 each having a nano size, a protective layer 204 formed of diamond-like carbon (DLC) on the recording layer 210, and fluorine on the surface of the protective layer 204 A lubricating layer 205 formed of a coating is provided. The disk substrate 201 corresponds to an example of the substrate in the above basic mode, and the magnetic particles 211 forming the recording layer 210 correspond to an example of the structure in the above basic mode. The magnetic particles 211 also correspond to the nanostructures and magnetic nanostructures described above for the basic form.

  Here, in this embodiment, the magnetic particles 211 forming the recording layer 210 are discs having a diameter of 30 nm and a thickness of 10 nm, and a Co film and a Pd film are alternately laminated in the thickness direction of the disc. Having an artificial lattice structure. The magnetic particles 211 are given magnetic anisotropy with the thickness direction of the disk as the easy axis of magnetization by this artificial lattice structure. In the magnetic disk 200, information recording by the above-described perpendicular magnetic recording method is realized by the magnetic anisotropy of each magnetic particle 211 in the recording layer 210.

  Next, a magnetic disk manufacturing method for manufacturing the magnetic disk 200 of FIG. 2 will be described.

  In the present embodiment, the magnetic disk manufacturing method includes a magnetic particle forming process for forming the nano-sized magnetic particles 211 constituting the recording layer 210 and an arranging process for arranging the magnetic particles 211. Here, the magnetic disk manufacturing method corresponds to one embodiment of the magnetic storage medium manufacturing method described above for the basic form, and the magnetic particle formation process corresponds to one embodiment of the nanostructure manufacturing method described above for the basic form. .

In contrast to the basic form described above,
The application form that “the resistant material is a magnetic material” is suitable.

  According to this application mode, it is possible to obtain nano-sized magnetic particles having a desired shape such as the above-described disk shape. Further, according to this application mode, it is possible to realize a desired crystal structure and desired magnetic characteristics by using a material deposition technique such as MBE or sputtering.

  The magnetic particle formation process of the present embodiment also corresponds to an embodiment of such a preferred application mode.

  First, a magnetic particle forming process in the magnetic disk manufacturing method of the present embodiment for manufacturing the magnetic disk 200 of FIG. 2 will be described.

  FIG. 3 is a diagram showing a flow of a series of processes in the magnetic particle formation process.

  In the magnetic particle forming process shown in FIG. 3, first, in step S101, a resist 512 that is cured by ultraviolet irradiation is applied to a mold substrate 511 of a predetermined material in an uncured state, and the diameter is 30 nm and the height is high. A mold 520 in which a plurality of 40 nm columnar protrusions 521 are arranged is prepared. In this embodiment, the mold 520 is formed of a material such as Ni, glass, or Si. Further, the protrusion 521 in the mold 520 is formed by a processing method capable of processing a desired shape such as electron beam drawing. As a method other than the electron beam drawing, there are a method of forming a shape based on nano-sized holes and pillars that are regularly arranged using alumina nanoholes or block copolymers, and a method of using an irregular arrangement. On the other hand, if the size is large, an optical method can also be used.

  The size of the mold 520 is such that it can be processed in an actual time by electron beam drawing or the like. The size of the mold 520 affects the number of magnetic particles obtained by the magnetic particle formation process shown in FIG. Here, the magnetic particle forming process shown in FIG. 3 is a process of forming a plurality of magnetic particles arranged in the arrangement process described later. In this embodiment, a large number of magnetic particles required for manufacturing the magnetic disk 200 are once added. The magnetic particle formation process shown in FIG. 3 may be repeated several times to finally obtain the required number of magnetic particles. For this reason, in this embodiment, the size of the mold 520 can be set to a size that can be processed within a realistic time as described above.

  Subsequently, in step S <b> 101, the mold 520 is pressed against the uncured resist 512, and the unevenness in the mold 520 is transferred to the resist 512. In the next step S102, the resist 512 is cured by irradiating the resist 512 with ultraviolet rays UV. In the present embodiment, the ultraviolet ray UV irradiation is performed in a state where the mold 520 is pressed against the resist 512. In the case where the mold 520 is formed of a material that transmits ultraviolet rays such as glass, the irradiation with the ultraviolet rays UV is performed through the mold 520. In addition, when the mold 520 is formed of a material that does not transmit ultraviolet light such as Ni, and the mold substrate 511 is formed of a material that transmits ultraviolet light such as glass, irradiation of the ultraviolet light UV is performed through the mold substrate 511. Is called. Thereafter, the mold 520 is peeled off from the cured resist 512. In the present embodiment, a release agent for the resist 512 is applied to the mold 520 in advance, thereby facilitating the above peeling. As a result, a mold 510 having a plurality of nano-sized holes 510a having a diameter of 30 nm and a depth of 40 nm on the surface is obtained.

  The above-described processing from step S101 to step S102 corresponds to an example of a mold creation process in the basic form described above, and the mold 510 corresponds to an example of a mold in the basic form described above.

  When the formation of the mold 510 is completed, in the next step S103, the formation of the Co film (film thickness nm) and the Pd film (film thickness nm) by the MBE method are entirely performed on the surface of the mold 510. The film is alternately repeated a plurality of times until the film thickness reaches 10 nm, and the magnetic anisotropy with the Co direction and the Pd film alternately stacked on the surface of the mold 510 and the stacking direction as the easy axis of magnetization. A magnetic film 530 having an artificial lattice structure having a thickness of 10 nm is formed. This step S103 corresponds to an example of the deposition process in the basic form described above.

  In the next step S104, ion milling is performed in which the magnetic film 530 on the die 510 is cut by colliding Ar ions or the like. Here, the ion milling in step S104 is performed so that ions collide with the magnetic film 530 from an oblique direction. For example, it is inclined about 60 degrees from the perpendicular of the magnetic film. As a result, of the magnetic film 530 on the mold 510, the magnetic film 530 on the convex portion of the mold 510 is removed while leaving the magnetic film 530 inside the hole 510a.

  In the final step S105 in the magnetic particle formation process shown in FIG. 3, the mold 510 in which the magnetic film 530 remains in the hole 510a is immersed in acetone, and the resist 512 is dissolved. Thereafter, the mold substrate 511 is removed using a filter having a coarser size than the nano size, and acetone is further removed by volatilization or the like, so that the magnetic film 530 inside the hole 510a of the mold 510 has a diameter of 30 nm. The nano-sized magnetic particles 211 having a thickness of 10 nm are taken out. This step S105 corresponds to an example of a mold removal process in the basic form described above.

  In the present embodiment, as an example of the mold removal process in the basic form described above, the above-described step S105 that employs the dissolution method using acetone is exemplified. However, the melting method used in the mold removal process in this basic form is not limited to this. For example, a dissolution method using an organic solvent such as DMA (N-N-dimethylacetamide) other than acetone may be used. Further, for example, a chemical removal method using a resist remover, various acids, alkalis, or the like may be used. Also, physicochemical treatment such as ultrasonic cleaning, water vapor cleaning, ozone dissolution, oxygen plasma ashing, sulfuric acid / hydrogen peroxide mixed liquid processing, or the like may be used. Which treatment is adopted depends on the degree of effectiveness with respect to the material to be dissolved (in the present embodiment, the resist 512 of the mold 510 described above) and the nanostructure (the magnetic particle 211 in the present embodiment) taken out by dissolution. Decided by a trade-off with less impact.

Moreover, in this embodiment, in this step S105, the unnecessary mold substrate 511 is removed by filtering using the above-described filter. In the present embodiment, this filtering ensures the acquisition of only the nano-sized magnetic particles 211. This is different from the basic form described above.
Application form: “Using a filter with a coarser grain than the nano-sized irregularities of the above-mentioned type, and having a filtering process for removing unnecessary substances other than the nano-sized structure made of the above-mentioned resistant material after the above-mentioned mold removing process” Is preferred.

  The process of step S105 also corresponds to an example of a process that combines the mold removal process in the mold removal process in the basic form described above and the filtering process in this applied form.

  Here, in the magnetic particle formation process in the present embodiment described above, as described above, the magnetic film 530 on the convex portion of the mold 510, which is an unnecessary part of the magnetic film 530 on the mold 510, The resist 512 is removed before the dissolution treatment. However, the nanostructure manufacturing method described above with respect to the basic form is not limited to such a form. For example, the unnecessary portion has the same area as the mold 510 and has a plurality of nano-sized through holes. In view of the above, the dissolution process of the resist 512 is performed while leaving an unnecessary part, and then the unnecessary part is removed together with the mold substrate 511 using a filter having a coarse eye. May be. When forming the magnetic film 530, it is preferable to increase the depth of the unevenness so that the magnetic film 530 inside the hole 510a used as the magnetic particle 211 is not connected to an unnecessary portion on the convex portion. However, there is a possibility of connection depending on conditions, in which case it becomes difficult to remove only unnecessary portions of the magnetic film 530 on the mold 510 with a filter or the like. Therefore, it is preferable that this unnecessary portion is removed before the dissolution process of the resist 512 as in this embodiment.

This is different from the basic form described above.
“The deposition process is a process of depositing the resistant material on both the concave portion and the convex portion of the mold.
A material removal process for removing the resistant material deposited on the convex portions of the mold;
This means that the application form that “the mold removing process is a process executed after the material removing process” is suitable.

  3 is equivalent to an example of the material removal process in this application form, and the process of step S105 is also equivalent to an example of the mold removal process in this application form.

  Moreover, in this embodiment, the unnecessary part on the convex part of the type | mold 510 is removed by ion milling. Ion milling is known as a processing method capable of easily and reliably performing nano-scale cutting, and is a processing method suitable for removing a thin film having a thickness of only 10 nm, such as the unnecessary portion.

This is for the type of application with the material removal process described above.
This means that the application form that “the material removal process is a process of removing the resistant material by milling with an ion beam” is more preferable.

  The removal process of the unnecessary portion in step S104 in FIG. 3 corresponds to an example of a material removal process in this more preferable application form.

  Here, as a processing method capable of easily and surely performing the unnecessary portion, there are other processing methods exemplified below in addition to ion milling as in the present embodiment.

  FIG. 4 is a diagram showing a processing method different from the processing method of FIG. 3 for removing unnecessary portions on the convex portions of the mold.

  The processing method shown in FIG. 4 is a processing method in which unnecessary portions on the convex portions of the mold 510 are removed by a chemical polishing process using a predetermined polishing pad 601. Chemical polishing is also known as a processing method capable of easily and reliably performing nano-scale cutting, and is a processing method suitable for removing the unnecessary portion.

This is for the type of application with the material removal process described above.
The application form that “the material removal process is a process of removing the resistant material by chemical polishing treatment” means that it is further suitable.

  The unnecessary portion removal process shown in FIG. 4 corresponds to an example of a material removal process in this more preferable application mode.

  FIG. 5 is a diagram showing a processing method different from the processing method of FIGS. 3 and 4 for removing unnecessary portions on the convex portions of the mold.

  In the processing method shown in FIG. 5, a base film 602 made of a predetermined material that dissolves in a solvent that does not dissolve the resist 512 is formed in advance only on the convex portion of the mold 510, and after the magnetic film 530 is formed. This is a processing method called lift-off in which the base film 602 is dissolved with the above-described solvent to remove unnecessary portions on the convex portion from the mold 510. Here, as a method of previously forming the base film 602 only on the convex portion of the mold 510, for example, the base film 602 is uniformly formed on the resist 512 cured in a flat state, and after the formation, the electron beam There is a method of making the hole 510a by drawing or the like. According to such a method, a state in which the base film 602 does not exist inside the hole 510a and the base film 602 exists only on the convex portion is obtained. The above-described processing method called lift-off is known as a processing method that can easily and reliably remove a thin film, and this processing method is also a processing method suitable for removing the above-described unnecessary portion. .

This is for the type of application with the material removal process described above.
“In the mold making process, the mold is made of a material having a lower resistance to the second removal process different from the removal process on the convex portion than both the mold material and the resistant material. Is the process of creating a thing with a geological layer
This means that the material removal process is a process of removing the resistant material deposited on the protrusions by removing the base film in the second removal process. ing.

  In the processing method called lift-off described with reference to FIG. 5, the process of forming the mold 510 with the base film 602 corresponds to an example of a mold creation process in this more preferable application mode, and the base film 602 is formed with a solvent. The process of melting and removing corresponds to an example of a material removing process in this more preferable application form.

  FIG. 6 is a diagram showing a processing method different from the processing methods of FIGS. 3 to 5 for removing unnecessary portions on the convex portions of the mold.

  The processing method shown in FIG. 6 is a processing method of physically peeling off the convex portion of the mold 510 from the mold 510, and is performed according to the following procedure.

  In the processing method shown in FIG. 6, first, in step S <b> 201, a release plate 610 in which an uncured resist 612 is applied to an ultraviolet transmission plate 611 formed of a material that transmits ultraviolet UV is prepared. The resist 612 is pressed against the mold 510 on which the magnetic film 530 has been formed 610.

  In the subsequent step S202, the resist 612 is irradiated with ultraviolet UV through the ultraviolet transmitting plate 611, and the resist 612 is cured. Thereby, the unnecessary portion of the convex portion of the mold 510 is fixed to the peeling plate 610 by the resist 612.

  In the last step S203, the peeling plate 610 is peeled off from the mold 510. In step S202 described above, since the unnecessary portion is fixed to the peeling plate 610, the unnecessary portion is peeled off from the mold 510 together with the peeling plate 610 by peeling off the peeling plate 610 in step 203.

  The above-described processing method of FIG. 6 is also known as a processing method that can easily and reliably remove the thin film, and this processing method is also a processing method suitable for removing the unnecessary portion. .

This is for the type of application with the material removal process described above.
“In the material removal process, the surface of a member coated with an adhesive material that adheres the resistant material with an adhesiveness higher than that of the convex portion and the resistant material is pressed against the mold. Furthermore, it means that the application form “is a process of removing the resistant material deposited on the convex portion by peeling the member from the mold” is also preferable.

  The processing method of the processing method of FIG. 6 corresponds to an example of a material removal process in this more preferable application form. Further, the release plate 610 shown in FIG. 6 corresponds to an example of “a member having an adhesive material applied to the surface” in this more preferable application mode.

  Here, in the magnetic particle formation process in the present embodiment shown in FIG. 3, as described above, nano-sized irregularities in which a plurality of holes 510a corresponding to the shape of the nano-sized magnetic material 530 in the mold 510 are arranged. The structure is formed by transferring the uneven structure in the mold 520 formed by electron beam drawing or the like to the resist 512. A method for forming a nano-sized uneven structure by such transfer is called nanoimprint, and it is known as a forming method whether a nano-sized uneven structure can be easily formed. Further, according to the magnetic particle forming process of the present embodiment shown in FIG. 3 using this forming method called nanoimprint, the mold 510 as described above can be repeatedly produced in a short time with the mold 520. As compared with a method of creating the mold 510 itself by, for example, electron beam drawing, a large number of magnetic particles 211 can be efficiently manufactured.

This is different from the basic form described above.
Meaning that the application form of “preparing a mold having a convex shape corresponding to the concave portion and transferring the convex shape of the mold to the mold material is a suitable process” is suitable. doing.

  The processing from step S101 to step S102 shown in FIG. 3 corresponds to an example of a mold creation process in this applied form, and the mold 520 corresponds to an example of a mold in this applied form.

  As described above, the magnetic particle forming process of the present embodiment described with reference to FIG. 3 and the processing method for removing unnecessary portions described with reference to FIGS. 4 to 6 are different from those of the present embodiment. According to the particle formation process, in any form, it is possible to obtain magnetic particles 211 of a desired size in a desired shape such as a disk shape suitable for the magnetic disk 200 shown in FIG. 2 having a diameter of 30 nm and a thickness of 10 nm. it can. Furthermore, according to these magnetic particle formation processes, the magnetic film 530 that is the source of the magnetic particles 211 is formed by a film formation method called MBE, in which material particles are deposited toward the film formation target to deposit the material. . According to this MBE method, it is possible to easily form a laminated film composed of a plurality of films having different constituent materials, and in this embodiment, the Co film and the Pd film are alternately formed by this MBE method. By forming the magnetic film 530 having an artificial lattice structure laminated on the magnetic particles 211, it is possible to provide the magnetic particles 211 with desired magnetic characteristics such as magnetic anisotropy with the disk-shaped thickness direction as the easy axis of magnetization. .

This is different from the basic form described above.
This means that an application form that “the deposition process is a process of flying the particles of the resistant material toward the mold by the MBE method” is also suitable.

  The process of step S103 in the magnetic particle formation process of the present embodiment described with reference to FIG. 3 corresponds to an example of a deposition process in this applied form.

  As an embodiment of the nanostructure manufacturing method described above with respect to the basic form, a mold 510 having a plurality of nano-sized holes 510a is used, and the magnetic film 530 deposited in the holes 510a is used as the magnetic particles 211. The process of forming magnetic particles has been described. However, the nanostructure manufacturing method described above for the basic form is not limited to such a form. The nanostructure manufacturing method described above with respect to the basic form uses, for example, a mold having a plurality of projections each of which is nano-sized and isolated in an island shape, and uses a magnetic film deposited on the projections as the magnetic particles 211 described above. It may be a form.

  In the case of this form, the magnetic film deposited in the lower part except on the protrusion becomes unnecessary. Since the protrusions are isolated from each other in the shape of islands, the unnecessary material becomes a wide magnetic film having a plurality of nano-sized through holes corresponding to the protrusions and having the same dimensions as the outer shape of the mold. Therefore, in the case of this embodiment, this wide magnetic film, which is an unnecessary material, is removed by the same process as the above-described filtering after the mold is removed. As a result, only the magnetic film deposited in the shape of each protrusion is reliably obtained as the magnetic particles 211 described above.

  As described above, as an embodiment of the nanostructure manufacturing method, there are a form in which a material deposited in a nanosized recess is used as a nanosize structure, and a material deposited in the protrusion is a nanosized structure. As a form to be used. In other words, the “nano-sized unevenness” in the basic form means an unevenness in which either one of the concave portion and the convex portion of the mold is nano-sized.

  Next, in the magnetic disk manufacturing method of the present embodiment for manufacturing the magnetic disk 200 of FIG.

  FIG. 7 is a schematic diagram showing an arrangement process for arranging nano-sized magnetic particles.

  In this embodiment, prior to this arrangement process, the backing layer 202 and the intermediate layer 203 are each formed on the disk substrate 201 by sputtering. The formation of the backing layer 202 and the intermediate layer 203 is a known technique and will not be described.

  Then, a large number of nano-sized magnetic particles 211 manufactured in the magnetic particle formation process of the present embodiment described with reference to FIG. 3 are arranged on the surface of the intermediate layer 203 by the advection accumulation method described below. .

  The advection accumulation method is a self-organization phenomenon in which the regular dense structure schematically shown in Part (a) of FIG. 2 is created spontaneously by nano-sized fine particles without any external control. This is the arrangement method used.

  In this embodiment, first, a suspension 540 in which a large number of nano-sized magnetic particles 211 are suspended in a predetermined liquid is prepared. Then, a laminate of the disk substrate 201, the backing layer 202, and the intermediate layer 203 is immersed vertically in the suspension 540, and then the laminate is moved in the direction of arrow A in the drawing at an ultra-low speed of about several μm per second. Be raised. Then, as shown in FIG. 7, a self-organization phenomenon occurs at the gas-liquid interface, and the magnetic particles 211 having a disk shape are spontaneously arranged in a dense structure on the surface of the above laminate. Since the adhesion of the suspension and the particles is determined by the wettability of the deposit surface, the adhesion region can be controlled by preparing regions (chemical surface patterns) having different wettability on the surface. At the stage where the laminate is pulled up, the magnetic particles 211 can be attached not only on the intermediate layer 203 but also on the back surface of the disk substrate 201 opposite to the intermediate layer 203 side, the side surface of the laminate, or the like. However, the magnetic particles 211 adhering to places other than those on the intermediate layer 203 are suppressed by wettability control, and when adhering, they are appropriately washed and wiped off.

  In the present embodiment, the magnetic particles 211 are arranged in a dense structure on the intermediate layer 203 by the arrangement process described with reference to FIG. 7, thereby forming the recording layer 210 in FIG. 2. Thereafter, the protective layer 204 by sputtering and the lubricating layer 205 by fluorine coating are formed to complete the magnetic disk 200. However, since the formation of the protective layer 204 and the lubricating layer 205 is also a known technique, the description is omitted. To do.

  According to the magnetic disk manufacturing method of the present embodiment described above, nano-sized magnetic particles 211 having a desired shape and size of 30 nm in diameter and 10 nm in thickness are manufactured by the above-described magnetic particle manufacturing process. The nano-sized structure in which desirable magnetic particles 211 are arranged achieves high resistance to thermal fluctuations and reduction of medium noise, and the magnetic disk 200 capable of further increasing the recording density can be obtained. As a result, the HDD 10 (see FIG. 1) on which the magnetic disk 200 is mounted can record information with a larger capacity.

  In the above description, as one embodiment of the nanostructure manufacturing method described above with respect to the basic form, a magnetic particle manufacturing process for manufacturing nanosized magnetic particles 211 having a disk shape suitable for the magnetic disk 200 shown in FIG. Was illustrated. However, the nanostructure manufacturing method described above with respect to the basic form is not limited to the form for forming such disk-shaped particles, and various shapes other than the disk-shaped particles as exemplified below. The method of manufacturing the structure may be used.

  FIG. 8 is a diagram illustrating a horizontally long plate-shaped structure, and FIG. 9 is a diagram illustrating a structure having an arbitrary shape such as a rectangular parallelepiped shape, a ring shape, a star shape, or an arrow shape. For example, in addition to the difference in the ratio of each side such as plate shape, wire shape, disc, rectangular parallelepiped, triangular pyramid, rings, polygons, circles and polygons, etc. It is possible to create. A multilayer structure made of different materials may be used.

  The structures 651 in FIG. 8 and the structures 652, 653,..., 657 in FIG. 9 are formed by, for example, changing the shape of the mold used in the nanoimprint described above into the shape of these structures by electron beam drawing or the like. It can be easily realized by processing into a corresponding shape or by processing the mold itself into a shape corresponding to the shape of these structures by electron beam drawing or the like.

  These structures 651 in FIG. 8 and structures 652, 653,..., 657 in FIG. 9 also correspond to one embodiment of the nanostructure described above for the basic form.

However, the nanostructure manufacturing method described above for the basic form is not limited to such a form. For example, a magnetic particle having a multilayer structure in which a layer of a soft magnetic material and a layer of a hard magnetic material are stacked, gold, or the like Multi-layer magnetic particles in which a metal material layer and a magnetic material layer are laminated, multi-layer particles in which an insulating layer and a magnetic layer such as MgO, alumina, and TiO ₂ are laminated, and a multi-layer in which a magnetic layer is laminated It may be in the form of forming magnetic particles having various structures other than the artificial lattice structure, such as structured particles, particles having a multilayer structure in which a dielectric layer and a magnetic layer are laminated, and the like. As the magnetic material, generally known inexpensive materials such as iron oxide can be considered, and as the hard magnetic material, generally known high crystal magnetic anisotropic materials such as Fe—Pt alloy and Co—Pt alloy can be considered. Furthermore, covering with a material that protects the particles may be performed as necessary.

  Further, in the above, as one embodiment of the nanostructure manufacturing method described above with respect to the basic form, the magnetic property of a single layer structure composed only of a magnetic film having an artificial lattice structure in which Co films and Pd films are alternately stacked. The magnetic particle manufacturing process for manufacturing the particles 211 was illustrated. However, the nanostructure manufacturing method described above with respect to the basic form is not limited to such a form. For example, a magnetic particle or dielectric having a multilayer structure in which a soft magnetic material layer and a hard magnetic material layer are laminated. It may be in the form of forming magnetic particles of various structures other than the artificial lattice structure, such as particles having a multilayer structure in which a layer and a magnetic layer are laminated. As the hard magnetic material, generally known high crystal magnetic anisotropic materials such as Fe—Pt alloy and Co—Pt alloy are conceivable.

  Hereinafter, as another embodiment of the nanostructure manufacturing method described above with respect to the basic mode, another magnetic particle manufacturing process for manufacturing the magnetic particles having the multilayer structure as described above will be described.

  In addition, regarding this other magnetic particle manufacturing process, the basic processing flow is the same as the series of processing flow shown in FIG. Therefore, the illustration is limited to the illustration of magnetic particles having a multilayer structure.

  FIG. 10 is a schematic view showing magnetic particles having a multilayer structure.

  The magnetic particles 710 shown in FIG. 10 include a Pd underlayer 711, a hard magnetic layer 712 having an artificial lattice structure in which Co films and Pd films are alternately stacked, and a general soft layer not specified here. A magnetic particle having a multilayer structure in which a soft magnetic layer 713 formed of a magnetic material is laminated. The magnetic particles 710 shown in FIG. 10 also correspond to an embodiment of the nanostructure or magnetic nanostructure described above for the basic form.

  In another magnetic particle manufacturing process for forming the magnetic particle 710 shown in FIG. 10, film formation by the MBE method executed in step S103 of FIG. 3 is performed in the order of the underlayer 711, the hard magnetic layer 712, and the soft magnetic layer 713. Then, the process is performed in three stages by sequentially changing the material.

  In this three-stage film formation, first, a hard magnetic layer 712 having an artificial lattice structure is formed on an underlayer 711 made of Pd, so that the hard magnetic layer 712 is perpendicular to the stacking direction in the drawing. The crystal growth that brings about magnetic anisotropy with the direction as the easy axis of magnetization is ensured. Further, since the soft magnetic layer 713 is formed on the hard magnetic layer 712, high thermal stability due to a high coercive force in the hard magnetic layer 712 and ease of recording with the assistance of magnetization reversal by the soft magnetic layer 713 are achieved. It will be compatible.

As described above, by forming the magnetic particles in a multilayer structure, desired crystal growth, desired magnetic characteristics, and the like can be further ensured. This is different from the basic form described above.
“In the deposition process, a plurality of different resistant materials are used as the resistant material, and particles of each of the plurality of resistant materials are sequentially blown toward the mold and stacked. This means that the application form “is a process of forming a film having a multilayer structure on the part and / or in the recess” is preferable.

  The above-described three-stage film formation executed in forming the magnetic particles 710 shown in FIG. 10 corresponds to an example of a deposition process in this application mode.

  In addition, the multilayer structure formed in the deposition process of this application form is not limited to the disk shape like the magnetic particle 710 in FIG. 10, and the single-layer structure in FIGS. 8 and 9 is used. The various shapes illustrated in (1) may be used.

  FIG. 11 is a diagram showing a plate-shaped or wire-shaped structure having a multilayer structure, and FIG. 12 is a structure having an arbitrary shape such as a rectangular parallelepiped shape having a multilayer structure, a ring shape, a star shape, an arrow shape, or a hemispherical shape. It is a figure which shows a body.

  The structures shown in these drawings also correspond to one embodiment of the nanostructure described above for the basic form.

  These plate-shaped multilayer structure 720, wire-shaped multilayer structure 730, and various-shaped multilayer structures 740, 750,..., 800 in FIG. This is realized by flying and depositing particles of the material of each layer. A plurality of stages of film formation executed in forming the structure shown in each of these drawings also corresponds to an example of a deposition process in an application mode corresponding to the multilayer structure.

  This is the end of the description of another magnetic particle manufacturing process for manufacturing a multi-layered magnetic particle.

  Moreover, in the above, the magnetic particle manufacturing process which forms a magnetic film on a type | mold by MBE method was illustrated as one Embodiment of the nano structure manufacturing method mentioned above about the basic form. However, the nanostructure manufacturing method described above with respect to the basic form is not limited to such a form. For example, the magnetic structure is formed by sputtering with directivity in the particle scattering direction so that the particles of the material are directed to the mold. The form etc. which form a film | membrane etc. may be sufficient.

  Further, in the above, as an example of the magnetic storage medium in the basic form described above, the magnetic disk 200 in which the magnetic particles are densely structured and arranged on the entire surface of the intermediate layer is illustrated. The magnetic storage medium in the basic form is not limited, and may be so-called discrete media, bit patterned media, or the like. In the discrete media to which the above-described basic form is applied, a plurality of magnetic particles formed as described above are arranged in a track shape with a dense structure, and a track of the discrete media is formed. Further, in the bit patterned media to which the above-described basic form is applied, the bits constituting the bit patterned media are formed by arranging the plurality of magnetic particles formed as described above at equal intervals. Become.

  Further, in the above, as an example of the magnetic storage medium in the basic form described above, the magnetic disk 200 in which the magnetic particles are densely structured and arranged on the entire surface of the intermediate layer is illustrated. The magnetic storage medium in the basic form may be a magnetic tape or the like in which magnetic particles are arranged on a nonmagnetic material tape.

  In the above, as an embodiment of the magnetic nanostructure described for the basic form, the magnetic particle 211 having a disk shape and having an easy axis of magnetization perpendicular to the disk surface is exemplified. However, the magnetic nanostructure described in the above is not limited thereto. That is, this embodiment does not limit the correspondence between the shape and the direction of the easy magnetization axis, such as having an easy magnetization axis perpendicular to the disk surface as long as it is a disk shape. . The magnetic nanostructure described for the basic form may be, for example, one having a disk shape and having an easy axis in the in-plane direction along the disk surface. The easy magnetization axis can be oriented in a desired direction depending on the use of the magnetic nanostructure described for the basic form.

  In the above description, a method for removing unnecessary materials by ion milling is illustrated as an example of a material removing process for removing unnecessary materials deposited on the mold. However, the material removing process is not limited to such a method. Absent. This material removal process may be a method that can remove unnecessary material at a specific location in the mold without adversely affecting other locations, and may be a method of removing unnecessary material by etching, for example.

  Hereinafter, the following additional remarks are disclosed regarding various forms including the basic form described above.

(Appendix 1)
A mold creation process for creating a mold having nano-sized irregularities with a predetermined material,
The particles of the resistant material having higher resistance to the removal process for removing the material constituting the mold are blown toward the mold, and the resistant material is deposited on the convex portion and / or in the concave portion of the mold. The deposition process,
A method of manufacturing a nanostructure, comprising: a mold removing step of removing a mold in which the resistant material is deposited on a convex part and / or in a concave part by the removing process.

(Appendix 2)
The deposition process is a process of depositing the resistant material on both the concave portion and the convex portion of the mold;
A material removal process for removing the resistant material deposited on the convex portions of the mold;
2. The method of manufacturing a nanostructure according to claim 1, wherein the mold removing process is a process executed after the material removing process.

(Appendix 3)
The nanostructure manufacturing method according to claim 2, wherein the material removing process is a process of removing the resistant material by milling using an ion beam.

(Appendix 4)
The nanostructure manufacturing method according to appendix 2, wherein the material removal step is a step of removing the resistant material by chemical polishing treatment.

(Appendix 5)
As the mold, the mold creation process is a base film made of a material having a lower resistance to the second removal process different from the removal process on the convex portion than both the material of the mold and the resistant material. Is the process of creating what has
The nanostructure manufacturing method according to claim 2, wherein the material removing process is a process of removing the resistant material deposited on the convex portion by removing the base film in the second removing process. Method.

(Appendix 6)
The material removal process is to press the surface of the member coated with an adhesive material that adheres the resistant material to the mold with an adhesive property higher than the adhesive property between the convex portion and the resistant material, The nanostructure manufacturing method according to appendix 2, further comprising a step of removing the resistant material deposited on the protrusions by peeling the member from the mold.

(Appendix 7)
The mold making process is a process of forming a mold by preparing a mold having a convex shape corresponding to the concave portion, and transferring the convex shape of the mold to the material of the mold. The nanostructure manufacturing method according to any one of 2 to 6.

(Appendix 8)
The nanostructure manufacturing method according to any one of appendices 2 to 7, wherein the deposition step is a step of flying particles of the resistant material toward the mold by MBE.

(Appendix 9)
The deposition process uses a plurality of different types of resistant materials as the resistant material, and sequentially stacks the particles of the plurality of types of resistant material toward the mold, thereby stacking the convex portions of the mold. The method for producing a nanostructure according to any one of claims 1 to 8, which is a process of forming a film having a multi-layer structure on and / or in a recess.

(Appendix 10)
A filter having a coarser grain than the nano-sized irregularities of the mold is used, and after the mold removal process, there is a filtering process for removing unnecessary substances other than the nano-sized structure made of the resistant material. The method for producing a nanostructure according to any one of claims 1 to 9.

(Appendix 11)
11. The nanostructure manufacturing method according to any one of appendices 1 to 10, wherein the resistant material is a magnetic material.

(Appendix 12)
A mold having nano-sized irregularities is made of a predetermined material, and particles of a resistant material having higher resistance to the removal treatment for removing the material constituting the mold are blown toward the mold, and the resistant material is Depositing on the convex part and / or in the concave part of the mold, removing the mold on which the resistant material is deposited on the convex part and / or in the concave part by the removing process, and remaining after the removing process; It consists of the said resistant material deposited on the said convex part or in the said recessed part, The nanostructure characterized by the above-mentioned.

(Appendix 13)
A mold having nano-sized irregularities is made of a predetermined material, and particles of a magnetic material having higher resistance to a removal process for removing the material constituting the mold are blown toward the mold, and the magnetic material is Depositing on the convex part and / or in the concave part of the mold, removing the mold on which the magnetic material is deposited on the convex part and / or in the concave part by the removing process, and remaining after the removing process; A magnetic nanostructure comprising the magnetic material deposited on the convex portion or in the concave portion.

(Appendix 14)
A mold creation process for creating a mold having nano-sized irregularities with a predetermined material,
The particles of the magnetic material having higher resistance to the removal process for removing the material constituting the mold are blown toward the mold, and the magnetic material is deposited on the convex portion and / or the concave portion of the mold. The deposition process,
A mold removing step of removing the mold on which the magnetic material is deposited on the convex part and / or in the concave part by the removing process;
A magnetic storage medium manufacturing comprising: arranging a structure made of the magnetic material remaining on the convex portion or in the concave portion after the mold removal process on a predetermined substrate Method.

(Appendix 15)
A substrate,
A mold having nano-sized irregularities is made of a predetermined material, and particles of a magnetic material having higher resistance to a removal process for removing the material constituting the mold are blown toward the mold, and the magnetic material is Depositing on the convex part and / or in the concave part of the mold, removing the mold on which the magnetic material is deposited on the convex part and / or in the concave part by the removing process, and remaining after the removing process; A magnetic storage medium comprising: a structure made of the magnetic material deposited on the convex portion or in the concave portion and arranged on the substrate.

(Appendix 16)
A substrate,
A mold having nano-sized irregularities is made of a predetermined material, and particles of a magnetic material having higher resistance to a removal process for removing the material constituting the mold are blown toward the mold, and the magnetic material is Depositing on the convex part and / or in the concave part of the mold, removing the mold on which the magnetic material is deposited on the convex part and / or in the concave part by the removing process, and remaining after the removing process; A magnetic storage medium comprising a structure made of the magnetic material deposited on the convex portion or in the concave portion and arranged on the substrate; and
A head for recording and / or reproducing information on the magnetic storage medium;
An information storage device comprising:

It is a figure which shows the hard disk drive (HDD) equivalent to one specific embodiment of the information storage device which demonstrated the basic form. It is a figure which shows typically the internal structure of the magnetic disc shown in FIG. It is a figure which shows the flow of a series of processes in a magnetic particle formation process. It is a figure which shows the processing method different from the processing method of FIG. 3 which removes the unnecessary part on the convex part of a type | mold. It is a figure which shows the processing method different from the processing method of FIG. 3 and FIG. 4 which removes the unnecessary part on the convex part of a type | mold. It is a figure which shows the processing method different from the processing method of FIGS. 3-5 which removes the unnecessary part on the convex part of a type | mold. It is a schematic diagram which shows the arrangement | sequence process which arranges a nanosize magnetic particle. It is a figure which shows a horizontally long plate-shaped structure. It is a figure which shows the structure of arbitrary shapes, such as a rectangular parallelepiped shape, a ring shape, a star shape, an arrow shape. It is a schematic diagram which shows the magnetic particle of a multilayer structure. It is a figure which shows the plate-shaped and wire-shaped structure which has a multilayer structure. It is a figure which shows the structure of arbitrary shapes, such as a rectangular parallelepiped shape which has a multilayer structure, a ring shape, a star shape, an arrow shape.

Explanation of symbols

10 HDD
DESCRIPTION OF SYMBOLS 101 Housing 102 Rotating shaft 103 Magnetic head 104 Head gimbal assembly 105 Arm shaft 106 Carriage arm 107 Arm actuator 200 Magnetic disk 201 Disk substrate 202 Backing layer 203 Intermediate layer 204 Protective layer 205 Lubricating layer 210 Recording layer 211,710 Magnetic particle 510 type 510a Hole 511 Type substrate 512 Resist 520 Mold 530 Magnetic film 540 Suspension 601 Polishing pad 602 Base film 610 Peeling plate 611 Ultraviolet transmitting plate 612 Resist 651, 652, 653, 654, 655, 656, 657, 720, 730, 740, 750, 760, 770, 780, 790, 800 Structure 711 Underlayer 712 Hard magnetic layer 713 Soft magnetic layer

Claims (7)

A mold making process of creating a mold having a nano-sized unevenness and a recessed part being non-penetrating with a predetermined material,
Using a plurality of different types of resistant materials that are higher in resistance to the removal treatment for removing the material constituting the mold, the particles of the plurality of types of resistant material are directed to the mold. The film having anisotropy due to the direction of the deposition is formed on the convex part and / or the concave part of the mold by sequentially skipping and depositing on the convex part and / or the concave part of the mold. The deposition process
A mold removing step of removing the mold in which the film having anisotropy is formed on the convex part and / or in the concave part, including the part forming the bottom of the concave part, by the removing process. The nanostructure manufacturing method characterized by the above-mentioned. The deposition process is a process of depositing the resistant material on both the concave portion and the convex portion of the mold;
A material removal process for removing the resistant material deposited on the convex portions of the mold;
2. The method of manufacturing a nanostructure according to claim 1, wherein the mold removing process is a process executed after the material removing process.   3. The method of manufacturing a nanostructure according to claim 2, wherein the material removing process is a process of removing the resistant material by milling using an ion beam.   3. The nanostructure manufacturing method according to claim 2, wherein the material removing process is a process of removing the resistant material by chemical polishing treatment. As the mold, the mold creation process is a base film made of a material having a lower resistance to the second removal process different from the removal process on the convex portion than both the material of the mold and the resistant material. Is the process of creating what has
3. The nanostructure according to claim 2, wherein the material removing process is a process of removing the resistant material deposited on the convex portion by removing the base film in the second removing process. Production method.   The nanostructure manufacturing method according to claim 1, wherein the resistant material is a magnetic material.   A mold making process of creating a mold having a nano-sized unevenness and a recessed part being non-penetrating with a predetermined material,
  A magnetic material having higher resistance to the removal treatment for removing the material constituting the mold than the material, and using a plurality of different types of magnetic materials, the particles of the plurality of types of magnetic materials are directed to the mold. The film having anisotropy due to the direction of the deposition is formed on the convex part and / or the concave part of the mold by sequentially skipping and depositing on the convex part and / or the concave part of the mold. The deposition process
  A mold removing process in which the mold on which the film having anisotropy is formed on the convex part and / or in the concave part is removed by the removing process, including the part forming the bottom of the concave part,
  An arraying step of arranging a structure made of the anisotropic film formed on the convex portion or in the concave portion remaining after the mold removing step on a predetermined substrate. A method of manufacturing a magnetic storage medium.

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