JP5318445B2 - Flat panel display - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a phosphor particle capable of constituting a fluorescent substance region without reflecting outside light to become like a white diffusing layer. <P>SOLUTION: The phosphor particle comprises (A) a phosphor particle body, and (B) a thin film consisting of any one of the nitride selected from the group consisting of chromium nitride, titanium nitride, tungsten nitride, and boron nitride, the thin film being formed on the surface of the phosphor particle body. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

The present invention relates to a flat display device using a fluorescent particles.

  In the field of display devices used in television receivers and information terminal equipment, the flat panel type (flat panel) that can meet the demands of thinner, lighter, larger screens and higher definition than the conventional mainstream cathode ray tube (CRT). Type) display devices are rapidly moving. Examples of such a flat display device include a liquid crystal display (LCD), an electroluminescence display (ELD), a plasma display (PDP), and a cold cathode field emission display (FED: field emission display). Can do. Among these, liquid crystal display devices are widely used as display devices for information terminal equipment, but for application to stationary television receivers, there are still problems with high brightness and high-speed response. Yes. On the other hand, a cold cathode field emission display is a cold cathode field emission device (hereinafter, field emission) capable of emitting electrons from a solid into a vacuum based on the quantum tunnel effect without depending on thermal excitation. In some cases, it is called an element), and is attracting attention in terms of high brightness, high-speed response, and low power consumption.

  FIG. 4 shows a schematic partial end view of a cold cathode field emission display device (hereinafter sometimes referred to as a display device) provided with a field emission element, and shows a state in which the cathode panel CP and the anode panel AP are disassembled. FIG. 5 shows a schematic exploded perspective view of a part of the cathode panel CP and the anode panel AP. The field emission device shown in the figure is a so-called Spindt type field emission device having a conical electron emission portion. The field emission device includes a cathode electrode 11 formed on a support 10, an insulating layer 12 formed on the support 10 and the cathode electrode 11, a gate electrode 13 formed on the insulating layer 12, a gate An opening 14 provided in the electrode 13 and the insulating layer 12 and a conical electron emission portion 15 formed on the cathode electrode 11 located at the bottom of the opening 14 are configured. In general, the cathode electrode 11 and the gate electrode 13 are each formed in a band shape in a direction in which the projected images of these two electrodes are orthogonal to each other, and an area where the projected images of these two electrodes overlap (for one subpixel). In general, a plurality of field emission elements are provided in this region (hereinafter referred to as an electron emission region EA). Further, the electron emission areas EA are usually arranged in a two-dimensional matrix within the effective area EF (area that functions as an actual display portion) of the cathode panel CP. An interlayer insulating layer 16 is formed on the insulating layer 12, and a focusing electrode 17 is formed on the interlayer insulating layer 16.

  On the other hand, the anode panel AP includes a substrate 20, a phosphor region 22 formed on the substrate 20 and having a predetermined pattern, and an anode electrode 24 formed thereon. One sub-pixel (sub-pixel) faces a group of field emission elements provided in an overlapping area (electron emission area EA) between the cathode electrode 11 and the gate electrode 13 on the cathode panel side, and a group of these field emission elements. And the phosphor region 22 on the anode panel side. In the effective area EF, such pixels are arranged on the order of several hundred thousand to several million, for example. A light absorption layer (black matrix) 23 is formed on the substrate 20 between the phosphor region 22 and the phosphor region 22. In the figure, reference numeral 21 represents a partition, reference numeral 25 represents a spacer holding portion, reference numeral 26 represents a spacer extending in the first direction (X direction), and reference numeral 27 represents a joining member. Here, in FIG. 5, illustration of a partition and a spacer was abbreviate | omitted.

  The display device can be manufactured by arranging the anode panel AP and the cathode panel CP so that the electron emission region EA and the phosphor region 22 face each other and joining the outer peripheral portion via the joining member 27. . A through-hole (not shown) for evacuation is provided in the invalid area NF (for example, the invalid area NF of the cathode panel CP) that surrounds the effective area EF and has peripheral circuits for selecting pixels. An exhaust pipe (not shown) sealed after evacuation is connected around the through hole. That is, the space SP surrounded by the anode panel AP, the cathode panel CP, and the bonding member 27 is in a vacuum.

JP2001-303036

  When the anode panel AP is viewed from the substrate side, the phosphor region composed of the phosphor particles often has a state like a white diffusion layer because the phosphor particles are transparent and reflect external light well. Present. In addition, since the anode electrode 24 similar to the mirror surface is formed, it reflects external light more efficiently. Specifically, for example, when light having a wavelength of 550 nm is incident on the anode panel AP from the substrate 20, including direct reflection on the substrate 20, the light reflectance of the entire anode panel AP is as high as 60 to 80%. high. Therefore, as a result of reflecting the external light, the display image appears whitish, causing a problem that the contrast in the display device is lowered. Such a phenomenon is referred to as “contrast reduction due to external light” for convenience.

  Usually, an antireflection film is bonded to the outer surface of the substrate 20 for the purpose of preventing a decrease in contrast due to external light. Here, when an antireflection film is produced with a pattern in which transmission characteristics are changed for each of the three primary colors of red, green, and blue, when the image is viewed from an unspecified angle, the pitch, pattern, etc. for each of the three primary colors Moire occurs in relation to Therefore, it is impossible to produce an antireflection film with different transmission characteristics for each of the three primary colors. Therefore, the anti-reflection film cannot have optical filter characteristics for selectively selecting only a desired wavelength, and the anti-reflection film uniformly absorbs light emission in all wavelength regions, so that red, green, Luminance decreases for all three primary colors of blue.

  By forming a color filter layer between the phosphor region 22 and the substrate 20, it is possible to suppress a decrease in contrast due to external light. However, in general, the material constituting the color filter layer is poor in heat resistance. In the manufacture of the anode panel, there is a process that passes through a temperature of about 400 ° C. However, at such a temperature, there is a problem that the color filter layer is damaged or the color filter layer is discolored. is there.

  A technique for forming a metal oxide film on the surface of phosphor particles by sputtering is known from, for example, Japanese Patent Application Laid-Open No. 2001-303036. Here, the metal is one or more kinds of metals selected from the group of Si, Al, In, Sn, Zr, Mg, and Ca. In the technique disclosed in this patent publication, by forming a metal oxide film on the surface of the phosphor particles by a sputtering method, the degree of deterioration in luminance is particularly high with respect to electron beam irradiation with a high current density. When used in the phosphor region of the anode panel of a cold cathode field emission display device, the luminance maintenance rate during continuous use is improved, and the decrease in light emission luminance is small even after long-term use. It is supposed to be presented. However, this patent publication does not describe or suggest that the phosphor particles are transparent and reflect external light well, so that a decrease in contrast in the display device becomes a problem. The oxides of Si, Al, In, Sn, Zr, Mg, and Ca are usually white, or are almost transparent, and when viewed from the outside, the phosphor layer is still visible as a white layer. In other words, there is no effect for suppressing a decrease in contrast due to external light.

  Accordingly, an object of the present invention is to provide phosphor particles that can form a phosphor region that does not reflect external light and exhibit a state like a white diffusion layer, and a flat display using the phosphor particles. To provide an apparatus.

The flat-type display according to the present onset light to achieve the above object,
An anode panel in which a phosphor region and an anode electrode are provided on a substrate, and a cathode panel having electron emission regions arranged in a two-dimensional matrix on a support are joined at the outer periphery, and the cathode panel The space between the anode panel and the anode panel is kept in a vacuum,
The phosphor particles constituting the phosphor region are
(A) a phosphor particle body light reflectance is 98% or less as measured at a wavelength of 550 nm,
(B) formed on the surface of the phosphor particle body, and a thin film made of any of the following (a) ~ (c),
(C) a SiO _x film formed on the surface of the thin film ;
Consists of
When the average light reflectance values of the anode panel measured at wavelengths of 450 nm and 650 nm through the substrate are Rf ₄₅₀ and Rf ₆₅₀ , respectively.
0. 9 ≦ Rf ₆₅₀ / Rf ₄₅₀ ≦ 1.1
A flat display device that satisfies the above requirements.
(A) A thin film made of any one nitride selected from the group consisting of chromium nitride, titanium nitride, tungsten nitride, and boron nitride
(B) A thin film made of any one metal selected from the group consisting of chromium, titanium, vanadium, manganese, cobalt, nickel, copper, tungsten, palladium, platinum and gold.
(C) A thin film made of any one carbide selected from the group consisting of silicon carbide, titanium carbide and tungsten carbide.

  In order to achieve the above object, a flat display device according to the first to seventh aspects of the present invention includes an anode panel in which a phosphor region and an anode electrode are provided on a substrate, and two on a support. A flat panel display device in which a cathode panel having electron emission regions arranged in a dimensional matrix is joined at the outer periphery, and a space sandwiched between the cathode panel and the anode panel is maintained in a vacuum.

And in the flat display device according to the first aspect of the present invention, the phosphor particles constituting the phosphor region are:
(A) a phosphor particle body, and
(B) a thin film made of any one kind of nitride selected from the group consisting of chromium nitride, titanium nitride, tungsten nitride and boron nitride formed on the surface of the phosphor particle body;
It is composed of

The phosphor particles according to the second aspect of the present invention for achieving the above object are:
(A) a phosphor particle body, and
(B) formed of any one kind of metal selected from the group consisting of chromium, titanium, vanadium, manganese, cobalt, nickel, copper, tungsten, palladium, platinum, and gold formed on the surface of the phosphor particle body. Thin film,
It is composed of The metal element constituting the thin film is desirably different from the element constituting the activator contained in the phosphor particle body.

In the flat display device according to the second aspect of the present invention for achieving the above object, the phosphor particles constituting the phosphor region are:
(A) a phosphor particle body, and
(B) formed of any one kind of metal selected from the group consisting of chromium, titanium, vanadium, manganese, cobalt, nickel, copper, tungsten, palladium, platinum, and gold formed on the surface of the phosphor particle body. Thin film,
It is composed of The metal element constituting the thin film is desirably different from the element constituting the activator contained in the phosphor particle body.

The phosphor particles according to the third aspect of the present invention for achieving the above object are:
(A) a phosphor particle body, and
(B) A thin film made of any one carbide selected from the group consisting of silicon carbide, titanium carbide and tungsten carbide formed on the surface of the phosphor particle body,
It is composed of

In the flat display device according to the third aspect of the present invention for achieving the above object, the phosphor particles constituting the phosphor region are:
(A) a phosphor particle body, and
(B) A thin film made of any one carbide selected from the group consisting of silicon carbide, titanium carbide and tungsten carbide formed on the surface of the phosphor particle body,
It is composed of

The phosphor particles according to the fourth aspect of the present invention for achieving the above object are:
(A) a phosphor particle body having a light reflectance measured at a wavelength of 550 nm of 98% or less, preferably 90% or less, more preferably 85% or less, and
(B) a thin film formed on the surface of the phosphor particle body,
It is composed of

In the flat display device according to the fourth aspect of the present invention for achieving the above object, the phosphor particles constituting the phosphor region are:
(A) a phosphor particle body having a light reflectance measured at a wavelength of 550 nm of 98% or less, preferably 90% or less, more preferably 85% or less, and
(B) a thin film formed on the surface of the phosphor particle body,
It is composed of

The phosphor particles according to the fifth aspect of the present invention for achieving the above object are:
(A) a phosphor particle body, and
(B) a thin film formed on the surface of the phosphor particle body,
Consists of
The light reflectance measured at a wavelength of 550 nm of the material constituting the thin film is 85% or less, preferably 80% or less when the film thickness of the thin film is measured at 10 nm.

In the flat display device according to the fifth aspect of the present invention for achieving the above object, the phosphor particles constituting the phosphor region are:
(A) a phosphor particle body, and
(B) a thin film formed on the surface of the phosphor particle body,
Consists of
The light reflectance measured at a wavelength of 550 nm of the material constituting the thin film is 85% or less, preferably 80% or less when the film thickness of the thin film is measured at 10 nm.

  In the phosphor particles or the flat display device according to the first aspect of the present invention, the thin film made of nitride constituting the phosphor particles in the flat display device, or the phosphor particles or the flat display device according to the second aspect of the present invention A thin film made of metal constituting the phosphor particles, or a thin film made of carbide constituting the phosphor particles according to the third aspect of the present invention or the phosphor particles in the flat display device, has a small amount in the thin film formation process. Oxides and oxide films may be formed, and trace amounts of oxides and oxide films may be formed during storage of phosphor particles with thin films and in the manufacturing process of flat display devices. obtain. Moreover, when a thin film is comprised from a titanium carbide, the form with which the titanium carbide couple | bonded with the aluminum oxide is also included.

In the flat display devices according to the first to fifth aspects of the present invention including the above preferred configurations, the respective values of the average light reflectance of the anode panel measured at wavelengths of 450 nm and 650 nm through the substrate Is Rf ₄₅₀ and Rf ₆₅₀ ,
0.8 ≦ Rf ₆₅₀ / Rf ₄₅₀ ≦ 1.2
Preferably,
0.9 ≦ Rf ₆₅₀ / Rf ₄₅₀ ≦ 1.1
It is desirable to satisfy

  The phosphor particles according to the first to fifth aspects of the present invention including the above-mentioned preferred configurations, or the phosphor particles in the flat display devices according to the first to fifth aspects of the present invention ( Hereinafter, these phosphor particles are collectively referred to as “the phosphor particles according to the first to fifth embodiments of the present invention”), which emits red light or blue light. It can be set as the form which light-emits. In general, the color of the phosphor particles that emit green (body color) tends to be blackish or green, and the color of the phosphor particles that emit red or blue (body color) tends to be white. As described above, a thin film is formed on the surface of the phosphor particle main body emitting blue light, and the phosphor particles emitting red or blue light as a whole are blackish or grayish, or brownish, More effective. And by setting it as such a form, it becomes possible to maintain luminous efficiency high, suppressing the fall of the contrast by external light.

In the phosphor particles and the like according to the first to fifth aspects of the present invention including the preferred configurations and forms described above, the average film thickness of the thin film is 2 × 10 ⁻⁹ m to 5 × 10 ⁻⁸ m. Preferably, it is 5 × 10 ⁻⁹ m to 2 × 10 ⁻⁸ m. By setting the average film thickness of the thin film in such a range, the phosphor particles can be surely colored, the reflection of external light can be suppressed, and the phosphor particle main body can be passed through the thin film. Energy loss in the colliding electron thin film can be suppressed.

  Here, the average film thickness of the thin film can be measured based on measurement using a transmission electron microscope (TEM) or Rutherford backscattering spectroscopy (RBS method). The thin film may have a form in which the surface of the phosphor particle body is covered in a continuous film state or a form in which the surface of the phosphor particle body is covered in a discontinuous film state.

Furthermore, more preferred configuration described, in the phosphor particles or the like according to the first aspect to the fifth aspect of the present invention including forms, be on the thin film is formed SiO _X film, phosphor Dispersibility of phosphor particles when forming a phosphor region (phosphor layer) from the particles, more specifically, in a phosphor paste or phosphor slurry containing phosphor particles and an organic binder or a water-soluble binder As a result of the increased affinity between the phosphor particles and the organic binder or water-soluble binder, the phosphor particles are more easily dispersed in the phosphor paste or phosphor slurry, and the phosphor region finally obtained Uniformity such as luminance and chromaticity can be improved. In addition, the phosphor particles in the phosphor paste or phosphor slurry dispersion can be prevented from aggregating during a normal storage period (about 1 to 3 weeks). The SiO _x film may have a form in which the thin film is covered in a continuous film state or a form in which the thin film is covered in a discontinuous film state. The average film thickness of the SiO _x film is preferably 2 × 10 ⁻⁹ m to 2 × 10 ⁻⁸ m, for example.

In addition, in the phosphor particles according to the first to fifth aspects of the present invention including the preferred configurations and forms described above, the average light reflectance (phosphor) of the phosphor particles measured at a wavelength of 550 nm. 80% or less, preferably 70% or less of the light reflectance of the entire particle body and the thin film, or the light reflectance of the entire phosphor particle body, the thin film, and the SiO _x film. It is desirable that

  Here, the average light reflectance of the phosphor particles can be measured, for example, based on the following method. That is, phosphor particles are applied on a glass plate and dried. Next, a resin layer is applied to the entire surface so as to cover the entire phosphor particles, and dried, and then an aluminum film is formed on the resin layer by vacuum deposition or sputtering. The resin layer is a kind of varnish in a broad sense. Cellulose derivatives, generally those containing nitrocellulose as a main component, dissolved in a volatile solvent such as a lower fatty acid ester, or other synthetic polymers are used. It can be composed of urethane lacquer, acrylic lacquer, and water-soluble acrylic emulsion. Thereafter, baking is performed in air at about 400 ° C., and the resin layer is removed (fired). Then, from the glass plate side (that is, from the side opposite to the aluminum film), the average light reflectance including regular reflection of the glass plate is measured using an integrating sphere. On the other hand, the average light reflectance of the white calibration plate coated with MgO is measured, and the average light reflectance of the phosphor particles is calibrated using the obtained measured value as the average light reflectance of 100%. The measurement method of the average light reflectance in the phosphor particles according to the sixth aspect of the present invention described below can be the same. For the measurement, a color meter equipped with an integrating sphere (for example, CM-2600d manufactured by Konica Minolta Holdings, Inc.) may be used. The light reflectance of the phosphor particle main body measured at a wavelength of 550 nm and the light reflectance of the material constituting the thin film (film thickness: 10 nm) measured at a wavelength of 550 nm are also measured by a color meter (for example, Konica Minolta, Inc.). What is necessary is just to measure using CM-2600d) made by Holdings. In the measurement, an ordinary standard white plate EVER-WHITE No. 9582 manufactured by Evers Co. may be used as a standard with a reflectance of 92.8%, and measurement may be performed in the SCE mode (regular reflection light removal mode). In the measurement of the light reflectance of the phosphor particle main body measured at a wavelength of 550 nm, about 3 grams of the phosphor particle main body is uniformly spread on the slide glass, and another slide glass is attached to the layered phosphor particle main body. The layered phosphor particle main body is uniformly pressed and solidified by placing it on top and applying pressure to another slide glass to obtain a smooth phosphor particle main body. At this time, the thickness of the phosphor particle main body layer is set to 1 mm or more so that light is not transmitted during measurement. In this way, a measurement sample can be obtained. In measuring the light reflectance of a material constituting a thin film (film thickness: 10 nm) measured at a wavelength of 550 nm, a measurement sample can be obtained by forming a 10 nm thin film on a glass substrate. .

  In the phosphor particles and the like according to the first to fifth aspects of the present invention including the preferred configurations and forms described above, the phosphor particle main body is excited by electrons if the thin film is made of a conductive material. When charged, the charge can be moved to the anode electrode more easily, and the phosphor particle body can be reliably prevented from being charged and the light emission in a large current region can be stabilized.

  The phosphor particles according to the sixth aspect of the present invention for achieving the above object have an average light reflectance measured at a wavelength of 550 nm of 80% or less, preferably 70% or less.

  Here, the phosphor particles according to the sixth aspect of the present invention can emit red light or emit blue light.

In order to achieve the above object, the flat display device according to the sixth aspect of the present invention uses the average light reflectance values of the anode panel measured through the substrate at wavelengths of 450 nm and 650 nm as Rf ₄₅₀ and Rf ₆₅₀ , respectively. When
0.8 ≦ Rf ₆₅₀ / Rf ₄₅₀ ≦ 1.2
Preferably,
0.9 ≦ Rf ₆₅₀ / Rf ₄₅₀ ≦ 1.1
Satisfied.

  Here, the average light reflectance of the anode panel can be measured using a color meter (for example, CM-2600d manufactured by Konica Minolta Holdings, Inc.) provided with an integrating sphere. The above-described flat display devices according to the first to fifth aspects of the present invention and the method for measuring the average light reflectance of the anode panel in the flat display device according to the seventh aspect of the present invention described below are also provided. The same can be said.

  In the flat display device according to the seventh aspect of the present invention for achieving the above object, the average light reflectance of the anode panel measured at a wavelength of 550 nm through the substrate is 50% or less, preferably 40% or less. .

  In the flat display device according to the sixth aspect or the seventh aspect of the present invention, the phosphor region may emit red light or blue light.

As a fluorescent substance particle main body, it can select and use suitably from conventionally well-known fluorescent substance particles. In the case of color display, the phosphor particle body whose color purity is close to the three primary colors stipulated by NTSC, white balance is achieved when the three primary colors are mixed, the afterglow time is short, and the afterglow times of the three primary colors are almost equal. Are preferably combined. As the composition of the red light emitting phosphor particles constituting the red light emitting phosphor region, (Y ₂ O ₃ : Eu), (Y ₂ O ₂ S: Eu), (Y ₃ Al ₅ O ₁₂ : Eu), ( Examples include Y ₂ SiO ₅ : Eu), (Zn ₃ (PO ₄ ) ₂ : Mn), and (CaAlSiN ₃ : Eu). Among them, (Y ₂ O ₃ : Eu), (Y ₂ O ₂ S: Eu) is preferably used. Further, as the composition of the green light emitting phosphor main body constituting the green light emitting phosphor region, (ZnSiO ₂ : Mn), (Sr ₄ Si ₃ O ₈ Cl ₄ : Eu), (ZnS: Cu, Al), ( ZnS: Cu, Au, Al) , [(Zn, Cd) S: Cu, Al], (Y 3 Al 5 O 12: Tb), (Y 2 SiO 5: Tb), [Y 3 (Al, Ga) ₅ O ₁₂ : Tb], (ZnBaO ₄ : Mn), (GbBO ₃ : Tb), (Sr ₆ SiO ₃ Cl ₃ : Eu), (BaMgAl ₁₄ O ₂₃ : Mn), (ScBO ₃ : Tb), (Zn) ₂ SiO ₄ : Mn), (ZnO: Zn), (Gd ₂ O ₂ S: Tb), and (ZnGa ₂ O ₄ : Mn) can be exemplified, among which (ZnS: Cu, Al), ( ZnS: Cu, Au, Al), [(Zn, Cd) S: Cu, Al], (Y ₃ Al ₅ O ₁₂ : Tb), [Y ₃ (Al, Ga) ₅ O ₁₂ : Tb], and (Y ₂ SiO ₅ : Tb) are preferably used. Furthermore, as a composition of the blue light emitting phosphor main body constituting the blue light emitting phosphor region, (Y ₂ SiO ₅ : Ce), (CaWO ₄ : Pb), CaWO ₄ , YP _0.85 V _0.15 O ₄ , (BaMgAl ₁₄ O ₂₃ : Eu), (Sr ₂ P ₂ O ₇ : Eu), (Sr ₂ P ₂ O ₇ : Sn), (ZnS: Ag, Al), (ZnS: Ag), ZnMgO, ZnGaO ₄ , (AlN : Eu) can be exemplified, among which (ZnS: Ag) and (ZnS: Ag, Al) are preferably used.

  The phosphor region may be composed of monochromatic phosphor particles (including the preferred configurations and the phosphor particles according to the first to sixth aspects of the present invention including the form described above), It is composed of phosphor particles of three primary colors (at least one kind of phosphor particles is composed of phosphor particles according to the first to sixth aspects of the present invention including the preferred configurations and forms described above). May be. The arrangement pattern of the phosphor regions is, for example, a dot shape. Specifically, when the flat display device is a color display, examples of the arrangement and arrangement of the phosphor regions include a delta arrangement, a stripe arrangement, a diagonal arrangement, and a rectangle arrangement. That is, one row of the phosphor regions arranged in a straight line is occupied by the row occupied by the red light emitting phosphor region, the row occupied by the green light emitting phosphor region, and the blue light emitting phosphor region. May be composed of a row in which a red light-emitting phosphor region, a green light-emitting phosphor region, and a blue light-emitting phosphor region are sequentially arranged. Here, the phosphor region is defined as a phosphor region that generates one bright spot on the anode panel. One pixel (one pixel) is composed of a set of one red light emitting phosphor region, one green light emitting phosphor region, and one blue light emitting phosphor region, and one subpixel is one phosphor. The region is composed of one red light emitting phosphor region, one green light emitting phosphor region, or one blue light emitting phosphor region. A gap between adjacent phosphor regions may be filled with a light absorption layer (black matrix) for the purpose of improving contrast.

  For the phosphor region, the phosphor particle composition prepared from the phosphor particles according to the first to sixth aspects of the present invention is used. For example, a red photosensitive red phosphor particle composition (red) A light emitting phosphor slurry) is applied to the entire surface, exposed and developed to form a red light emitting phosphor region, and then green prepared from the phosphor particles according to the first to sixth embodiments of the present invention. The photosensitive green phosphor particle composition (green light-emitting phosphor slurry) is coated on the entire surface, exposed and developed to form a green light-emitting phosphor region, and the first to sixth aspects of the present invention. A method of forming a blue light-emitting phosphor region by applying a blue photosensitive blue phosphor particle composition (blue light-emitting phosphor slurry) prepared from the phosphor particles according to the embodiment to the entire surface, exposing and developing the composition. Can be formed. Note that the order of forming the red light-emitting phosphor region, the green light-emitting phosphor region, and the blue light-emitting phosphor region is essentially arbitrary. Alternatively, each phosphor region may be formed by a screen printing method, an ink jet printing method, a float coating method, a sedimentation coating method, a phosphor film transfer method, or the like. Although the average thickness of the phosphor region on the substrate is not limited, it is desirably 3 μm to 20 μm, preferably 5 μm to 10 μm.

In the phosphor particles and the like according to the first to fifth aspects of the present invention, a sputtering method can be mentioned as a method for forming a thin film. In addition, as a method for forming the SiO _x film, a sputtering method, a method in which fine silica particles are precipitated and reacted on a thin film formed on the phosphor surface by a wet method, a sol using a silicon-containing alkoxide, Formed by gel coating method, formed by hydrolyzing, precipitating and reacting with alkoxysilane using alkoxysilane, formed by dry coating silicate compound in vacuum based on laser ablation method A method can be mentioned. Examples of the method for identifying the thin film formed on the surface of the phosphor particle body include a method using a transmission electron microscope (TEM) and Rutherford backscattering spectroscopy (RBS method).

  The flat display devices according to the first to seventh embodiments of the present invention including the preferred configurations and forms described above (hereinafter collectively referred to as “the flat display device of the present invention”). In this case, as an electron-emitting device constituting the electron-emitting region, a cold cathode field electron-emitting device (hereinafter abbreviated as a field-emitting device), a metal / insulating film / metal-type device (MIM device), a surface conduction electron emission An element can be mentioned. Further, as the flat display device of the present invention, a flat display device (cold cathode field emission display device) provided with a cold cathode field electron emission device, a flat display device incorporating an MIM element, and a surface conduction electron emission. A flat display device in which an element is incorporated can be given.

In the flat display device of the present invention, the substrate constituting the cathode panel or the substrate constituting the anode panel may be any glass substrate, as long as the surfaces facing each other are composed of insulating members. Examples include a glass substrate with an insulating coating formed on the surface, a quartz substrate, a quartz substrate with an insulating coating formed on the surface, and a semiconductor substrate with an insulating coating formed on the surface. It is preferable to use a glass substrate or a glass substrate having an insulating film formed on the surface. As glass substrates, high strain point glass, low alkali glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), forsterite (2MgO · SiO ₂₎ ), Lead glass (Na ₂ O · PbO · SiO ₂ ), and alkali-free glass.

  Further, in the cathode panel in the flat display device of the present invention, the electron emission regions are arranged in a two-dimensional matrix, but the projection image in the first direction (X direction) in which the electron emission regions are arranged and the second are arranged. It is preferable from the viewpoint of simplification of the structure of the flat display device that the projected image in the direction (Y direction) is orthogonal, that is, the first direction and the second direction are orthogonal. Alternatively, in the cathode panel, the projected image of the cathode electrode and the projected image of the gate electrode are preferably orthogonal from the viewpoint of simplifying the structure of the cold cathode field emission display. Here, for example, the gate electrode may extend in the first direction (X direction), and the cathode electrode may extend in the second direction (Y direction).

  In the flat display device of the present invention, when the number of pixels is M × N, specifically, VGA (640, 480), S-VGA (800, 600), XGA (1024, 768), APRC (1152). , 900), S-XGA (1280, 1024), U-XGA (1600, 1200), HD-TV (1920, 1080), Q-XGA (2048, 1536), (1920, 1035), (720) , 480), (1280, 960), and the like, but some of the image display resolutions can be exemplified, but the present invention is not limited to these values.

Here, in the case where the flat display device of the present invention is a cold cathode field emission display device including a cold cathode field emission device (abbreviated as field emission device), the field emission device is:
(A) a strip-shaped cathode electrode formed on a support;
(B) an insulating layer formed on the support and the cathode electrode;
(C) a strip-shaped gate electrode formed on the insulating layer;
(D) an opening provided in a portion of the gate electrode and the insulating layer located in an overlapping region where the cathode electrode and the gate electrode overlap, and an exposed portion of the cathode electrode at the bottom; and
(E) an electron emission portion provided on the cathode electrode exposed at the bottom of the opening, the electron emission being controlled by application of a voltage to the cathode electrode and the gate electrode;
Consists of.

  The type of the field emission device is not particularly limited, and a Spindt-type field emission device (a field emission device in which a conical electron emission portion is provided on the cathode electrode positioned at the bottom of the opening) or a flat type field emission device An element (a field emission element in which a substantially planar electron emission portion is provided on a cathode electrode positioned at the bottom of an opening) can be given. In the cathode panel, an overlapping region where the gate electrode and the cathode electrode overlap constitutes an electron emission region, and the electron emission region is arranged in a two-dimensional matrix in the effective region of the cathode panel. Each electron emission region is provided with one or a plurality of field emission elements.

  In a cold cathode field emission display, when a display is activated, a strong electric field generated by a voltage applied to the gate electrode and the cathode electrode is applied to the electron emission portion. As a result, electrons are emitted from the electron emission portion by the quantum tunnel effect. Is done. The electrons are attracted to the anode panel by the anode electrode provided on the anode panel, and collide with the phosphor region. As a result of the collision of electrons with the phosphor region, the phosphor region emits light and can be recognized as an image.

  Here, the effective area is a central display area that performs a display function that is a practical function as a flat display device, and the ineffective area is located outside the effective area, and the effective area is framed. Besieged.

In the cold cathode field emission display, the cathode electrode is connected to the cathode electrode control circuit, the gate electrode is connected to the gate electrode control circuit, and the anode electrode is connected to the anode electrode control circuit. Note that these control circuits can be constituted by known circuits. During display operation, the voltage (anode voltage) V _A applied to the anode electrode from the anode electrode control circuit is normally constant, and can be set to, for example, 5 to 15 kilovolts. Alternatively, when the distance between the anode panel and the cathode panel is d ₀ (where 0.5 mm ≦ d ₀ ≦ 10 mm), the value of V _A / d ₀ (unit: kilovolt / mm) is 0. It is desirable to satisfy 5 or more and 20 or less, preferably 1 or more and 10 or less, and more preferably 4 or more and 8 or less. At the time of display operation of the cold cathode field emission display device, for example, with respect to the voltage V _C applied to the cathode electrode and the voltage V _G applied to the gate electrode, a voltage modulation method or a pulse width modulation method is adopted as a gradation control method. be able to.

A field emission device can be generally manufactured by the following method.
(1) forming a cathode electrode on a support;
(2) forming an insulating layer on the entire surface (on the support and the cathode electrode);
(3) forming a gate electrode on the insulating layer;
(4) forming an opening in a portion of the gate electrode and the insulating layer in a region where the cathode electrode and the gate electrode overlap, and exposing the cathode electrode at the bottom of the opening;
(5) A step of forming an electron emission portion on the cathode electrode located at the bottom of the opening.

Alternatively, the field emission device can be manufactured by the following method.
(1) forming a cathode electrode on a support;
(2) forming an electron emission portion on the cathode electrode;
(3) forming an insulating layer on the entire surface (on the support and the electron emission portion or on the support, the cathode electrode and the electron emission portion);
(4) forming a gate electrode on the insulating layer;
(5) A step of forming an opening in a portion of the gate electrode and the insulating layer in the overlapping region of the cathode electrode and the gate electrode, and exposing the electron emission portion at the bottom of the opening.

  In the flat display device of the present invention, when a focusing electrode (focus electrode) is provided, an interlayer insulating layer is further provided on the gate electrode and the insulating layer, and the focusing electrode is provided on the interlayer insulating layer. A structure or a structure in which a focusing electrode is provided above the gate electrode can be employed. Here, the focusing electrode is an electrode for converging the trajectory of emitted electrons that are emitted from the opening and directed toward the anode electrode, thereby improving the luminance and preventing optical crosstalk between adjacent pixels. It is. In a so-called high voltage type cold cathode field emission display, the potential difference between the anode electrode and the cathode electrode is on the order of several kilovolts or more and the distance between the anode electrode and the cathode electrode is relatively long. The electrode is particularly effective. A relatively negative voltage (for example, 0 volts) is applied to the focusing electrode from the focusing electrode control circuit. The focusing electrode does not necessarily have to be individually formed so as to surround each of the electron emission portion or the electron emission region provided in the overlapping region where the cathode electrode and the gate electrode overlap, for example, the electron emission portion or The electron emission regions may be extended along a predetermined arrangement direction, or the electron emission portion or the electron emission region may be surrounded by a single convergence electrode (that is, the convergence electrode may be formed in the entire effective region). In this case, a single sheet-like structure covering the plurality of electron emission portions or electron emission regions can be provided with a common convergence effect. Note that an opening (third opening) is provided in the focusing electrode and the interlayer insulating layer.

As constituent materials of the cathode electrode, the gate electrode, and the focusing electrode, chromium (Cr), aluminum (Al), tungsten (W), niobium (Nb), tantalum (Ta), molybdenum (Mo), copper (Cu), gold ( Various metals including metals such as Au), silver (Ag), titanium (Ti), nickel (Ni), cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn); Alloys (for example, MoW) or compounds (for example, TiW; nitrides such as TiN and WN; silicides such as WSi ₂ , MoSi ₂ , TiSi ₂ , and TaSi ₂ ); semiconductors such as silicon (Si); Examples thereof include carbon thin films such as diamond; conductive metal oxides such as ITO (indium oxide-tin), indium oxide, and zinc oxide. The gate electrode, the cathode electrode, and the focusing electrode can have a single layer structure or a stacked structure of these materials. In addition, as a method for forming these electrodes, for example, various physical vapor deposition methods (PVD methods) including vacuum deposition methods such as electron beam deposition method and hot filament deposition method, sputtering methods, ion plating methods, and laser ablation methods. Various chemical vapor deposition methods (CVD method); various printing methods including screen printing method, ink jet printing method, metal mask printing method; plating method (electroplating method and electroless plating method); lift-off method; sol-gel The method etc. can be mentioned, The combination of these methods and an etching method can also be mentioned. Here, by appropriately selecting the formation method, it is possible to directly form a patterned strip-shaped cathode electrode, gate electrode, and focusing electrode.

  In the Spindt-type field emission device, as the material constituting the electron emission portion, molybdenum, molybdenum alloy, tungsten, tungsten alloy, titanium, titanium alloy, niobium, niobium alloy, tantalum, tantalum alloy, chromium, chromium alloy, and And at least one material selected from the group consisting of silicon (polysilicon and amorphous silicon) containing impurities. The electron emission portion of the Spindt-type field emission device can be formed by various PVD methods such as a sputtering method and a vacuum deposition method, and various CVD methods.

In the flat field emission device, it is preferable that the material constituting the electron emission portion is composed of a material having a work function Φ smaller than that of the material constituting the cathode electrode. What is necessary is just to determine based on the work function of the material which comprises a cathode electrode, the electric potential difference between a gate electrode and a cathode electrode, the magnitude | size of the emission electron current density requested | required, etc. Alternatively, the material constituting the electron emission portion may be appropriately selected from materials in which the secondary electron gain δ of the material is larger than the secondary electron gain δ of the conductive material constituting the cathode electrode. Good. In the flat type field emission device, carbon, more specifically, amorphous diamond or graphite, a carbon nanotube structure (carbon nanotube and / or graphite nanofiber), as a particularly preferable constituent material of the electron emission portion, Examples thereof include ZnO whiskers, MgO whiskers, SnO ₂ whiskers, MnO whiskers, Y ₂ O ₃ whiskers, NiO whiskers, ITO whiskers, In ₂ O ₃ whiskers, and Al ₂ O ₃ whiskers. In addition, the material which comprises an electron emission part does not necessarily need to be provided with electroconductivity.

  Planar shape of the first opening (opening formed in the gate electrode) or the second opening (opening formed in the insulating layer) (shape when the opening is cut in a virtual plane parallel to the support surface) ) Can be any shape such as a circle, an ellipse, a rectangle, a polygon, a rounded rectangle, a rounded polygon. The formation of the first opening can be performed by, for example, anisotropic etching, isotropic etching, a combination of anisotropic etching and isotropic etching, or, depending on the method of forming the gate electrode, The first opening can also be formed directly. The second opening can also be formed by, for example, anisotropic etching, isotropic etching, or a combination of anisotropic etching and isotropic etching. The formation of the third opening provided in the focusing electrode and the interlayer insulating layer can be performed in the same manner.

  In the field emission device, depending on the structure of the field emission device, one electron emission portion may exist in one opening, or a plurality of electron emission portions may exist in one opening. In addition, a plurality of first openings are provided in the gate electrode, one second opening communicating with the first opening is provided in the insulating layer, and one or more are provided in one second opening provided in the insulating layer. There may be an electron emission portion.

In the field emission device, a resistor thin film may be formed between the cathode electrode and the electron emission portion. By forming the resistor thin film, the operation of the field emission device can be stabilized, the electron emission characteristics can be made uniform, and the leakage current between the cathode electrode and the gate electrode can be suppressed. Materials constituting the resistor thin film include carbon-based resistor materials such as silicon carbide (SiC) and SiCN, semiconductor resistor materials such as SiN and amorphous silicon, and high melting points such as ruthenium oxide (RuO ₂ ), tantalum oxide, and tantalum nitride. Examples thereof include metal oxides and refractory metal nitrides. Examples of the method for forming the resistor thin film include various printing methods such as a sputtering method, a CVD method, and a screen printing method. The electric resistance value per one electron emitting portion may be about 1 × 10 ⁵ to 1 × 10 ¹¹ Ω, preferably several MΩ to several tens of gigaΩ.

Insulating layer, as a constituent material of the interlayer insulating _{layer, SiO 2, BPSG, PSG,} BSG, AsSG, PbSG, SiON, SOG ( spin on glass), low-melting glass, SiO ₂ based materials such glass paste; SiN-based materials; polyimide These insulating resins can be used alone or in appropriate combination. For forming the insulating layer and the interlayer insulating layer, known processes such as various printing methods such as various CVD methods, coating methods, sputtering methods, and screen printing methods can be used.

  In the flat display device of the present invention, examples of the configuration of the anode electrode and the phosphor region include a configuration in which the anode electrode is formed on the substrate and the phosphor region is formed on the anode electrode. In this case, a so-called metal back film that is electrically connected to the anode electrode may be formed on the phosphor region.

The anode electrode may be composed of one anode electrode as a whole, or may be composed of a plurality of anode electrode units. In the latter case, it is preferable that the anode electrode unit and the anode electrode unit are electrically connected by an anode electrode resistor layer. The material constituting the anode resistor layer is a carbon-based material such as carbon, silicon carbide (SiC), SiCN; SiN-based material; ruthenium oxide (RuO ₂ ), tantalum oxide, tantalum nitride, chromium oxide, titanium oxide, etc. Examples thereof include melting point metal oxides and high melting point metal nitrides; semiconductor materials such as amorphous silicon; ITO. It is also possible to realize a stable desired sheet resistance value by combining a plurality of films such as laminating a carbon thin film having a low resistance value on the SiC resistance film. Examples of the sheet resistance value of the anode electrode resistor layer include 1 × 10 ⁻¹ Ω / □ to 1 × 10 ¹⁰ Ω / □, preferably 1 × 10 ³ Ω / □ to 1 × 10 ⁸ Ω / □. it can. The number of anode electrode units [UN] may be two or more. For example, when the total number of phosphor regions arranged in a straight line is [un], [UN] = [un], or , [Un] = u · [UN] (u is an integer of 2 or more, preferably 10 ≦ u ≦ 100, more preferably 20 ≦ u ≦ 50), or spacers arranged at a constant interval. The number of pixels can be a number obtained by adding 1, or the number of pixels or the number of subpixels can be matched, or the number of pixels or the number of subpixels can be an integer. The size of each anode electrode unit may be the same regardless of the position of the anode electrode unit, or may vary depending on the position of the anode electrode unit. An anode electrode resistor layer may be formed on one anode electrode as a whole. As described above, if the anode electrode is divided into anode electrode units having a smaller area, instead of being formed over almost the entire effective area, the static electricity between the anode electrode unit and the electron emission area is formed. The electric capacity can be reduced. As a result, the occurrence of discharge can be reduced, and the occurrence of damage to the anode electrode and the electron emission region due to the discharge can be effectively reduced.

  When the anode electrode is composed of an anode electrode unit and a partition wall (described later) is formed, the anode electrode unit may be formed so as to extend from each phosphor region to the partition wall side surface. it can. The anode electrode unit may be formed from each phosphor region to the middle of the side wall of the partition wall.

The anode electrode (including the anode electrode unit) may be formed using a conductive material layer. As a method for forming the conductive material layer, for example, vacuum deposition methods such as electron beam deposition method and hot filament deposition method, various PVD methods such as sputtering method, ion plating method and laser ablation method; various CVD methods; various methods including screen printing method Examples thereof include printing method; metal mask printing method; lift-off method; sol-gel method. That is, a conductive material layer is formed, and based on lithography technology and etching technology, this conductive material layer can be patterned to form an anode electrode. Alternatively, the anode electrode can be obtained by forming a conductive material based on various PVD methods or various printing methods through a mask or screen having an anode electrode pattern. The anode electrode resistor layer can also be formed by the same or similar method as the anode electrode. That is, an anode electrode resistor layer may be formed from a resistor material, and the anode electrode resistor layer may be patterned based on a lithography technique and an etching technique, or a mask or a screen having an anode electrode resistor layer pattern. The anode electrode resistor layer can be obtained by forming the resistor material through various PVD methods and various printing methods. 3 × 10 ⁻⁸ m (30 nm) to 1 as the average thickness of the anode electrode on the substrate (or above the substrate) (when the partition is provided as described later, the average thickness of the anode electrode on the top surface of the partition) Examples include x10 ⁻⁶ m (1 μm), preferably 5 × 10 ⁻⁸ m (50 nm) to 5 × 10 ⁻⁷ m (0.5 μm).

As the constituent material of the anode electrode, aluminum (Al), molybdenum (Mo), chromium (Cr), tungsten (W), niobium (Nb), tantalum (Ta), gold (Au), silver (Ag), titanium (Ti ), Cobalt (Co), zirconium (Zr), iron (Fe), platinum (Pt), zinc (Zn), etc .; alloys or compounds containing these metal elements (for example, nitrides such as TiN, WSi ₂ , MoSi ₂ , TiSi ₂ , TaSi _2, etc.); silicon (Si), semiconductors; diamond, graphite and other carbon thin films; ITO (indium oxide-tin), indium oxide, zinc oxide, etc., conductive metal oxides Can be illustrated. When the anode electrode resistor layer is formed, the anode electrode is preferably made of a conductive material that does not change the electric resistance value of the anode electrode resistor layer. For example, the anode electrode resistor layer is made of silicon carbide (SiC). When comprised, it is preferable to comprise an anode electrode from molybdenum (Mo) or aluminum (Al).

  It is preferable from the viewpoint of improving the contrast of the display image that the light absorption layer that absorbs light from the phosphor region is formed between adjacent phosphor regions or between a partition wall and a substrate described later. Here, the light absorption layer functions as a so-called black matrix. As a material constituting the light absorption layer, it is preferable to select a material that absorbs 90% or more of light from the phosphor region. Such materials include carbon, metal thin films (eg, chromium, nickel, aluminum, molybdenum, etc., or alloys thereof), metal oxides (eg, chromium oxide), metal nitrides (eg, chromium nitride), heat resistance Materials such as photosensitive organic resins, glass pastes, glass pastes containing conductive particles such as black pigments and silver, and specifically, photosensitive polyimide resins, chromium oxides, and chromium oxide / chromium laminated films Can be illustrated. In the chromium oxide / chromium laminated film, the chromium film is in contact with the substrate. The light absorption layer depends on the material used, for example, a combination of a vacuum deposition method, a sputtering method and an etching method, a combination of a vacuum deposition method, a sputtering method, a spin coating method and a lift-off method, various printing methods, a lithography technique, etc. Thus, it can be formed by a method selected as appropriate.

  In order to prevent an electron recoiled from the phosphor region or a secondary electron emitted from the phosphor region from entering another phosphor region, so-called optical crosstalk (color turbidity) is generated. It is preferable to provide a partition wall. Examples of the partition wall forming method include a screen printing method, a dry film method, a photosensitive method, a casting method, and a sandblast forming method. Here, in the screen printing method, an opening is formed in a portion of the screen corresponding to a portion where a partition is to be formed, and the partition forming material on the screen is passed through the opening using a squeegee, and the partition is formed on the substrate. In this method, after the formation material layer is formed, the partition wall formation material layer is fired. The dry film method is a method of laminating a photosensitive film on a substrate, removing the photosensitive film at the part where the partition wall is to be formed by exposure and development, embedding the partition wall forming material in the opening generated by the removal, and baking. . The photosensitive film is burned and removed by baking, and the partition wall-forming material embedded in the openings remains to form partition walls. The photosensitive method is a method in which a barrier rib-forming material layer having photosensitivity is formed on a substrate, the barrier rib-forming material layer is patterned by exposure and development, and then fired (cured). The casting method (embossing molding method) refers to a method for forming a partition wall forming material layer by extruding a partition wall forming material layer made of a paste-like organic material or inorganic material onto a substrate from a mold (cast). In this method, the partition wall forming material layer is fired. The sand blast forming method is, for example, a method for forming a partition wall forming material layer on a substrate using a screen printing method, a metal mask printing method, a roll coater, a doctor blade, a nozzle discharge type coater, etc. In this method, the portion of the partition wall forming material layer to be formed is covered with a mask layer, and then the exposed portion of the partition wall forming material layer is removed by sandblasting. After the partition wall is formed, the partition wall may be polished to flatten the top surface of the partition wall. Further, a part of the partition may function as a spacer holding portion.

  As a planar shape of the part surrounding the phosphor region in the partition wall (corresponding to the inner contour line of the projected image of the partition wall side surface and a kind of opening region), a rectangular shape, a circular shape, an elliptical shape, an oval shape, a triangular shape, Examples include pentagonal or more polygonal shapes, rounded triangular shapes, rounded rectangular shapes, rounded polygons, etc., and linear shapes extending parallel to two sides of the phosphor region (Rod-like shape). By arranging these planar shapes (planar shapes of the opening regions) in a two-dimensional matrix, a lattice-like partition is formed. This two-dimensional matrix-like arrangement may be arranged, for example, like a cross or like a zigzag.

Examples of the partition wall forming material include photosensitive polyimide resin, lead glass colored with a metal oxide such as cobalt oxide, SiO ₂ , and a low melting point glass paste. A protective layer (for example, made of SiO ₂ , SiON, or AlN) is provided on the surface (top surface and side surface) of the partition wall to prevent an electron beam from colliding with the partition wall and releasing gas from the partition wall. It may be formed.

The cathode panel and the anode panel are joined at the outer periphery, but the joining may be performed using an adhesive layer as a joining member, or a rod-like or frame-like (frame-like) insulation such as glass or ceramics. You may carry out using the joining member which consists of the frame body comprised from material and an adhesive layer. When using a joining member consisting of a frame and an adhesive layer, the height of the frame is appropriately selected, so that the cathode panel and the anode panel are compared with the case where a joining member consisting only of the adhesive layer is used. It is possible to set the facing distance between the longer. The material constituting the adhesive layer is generally a frit glass such as B ₂ O ₃ —PbO-based frit glass or SiO ₂ —B ₂ O ₃ —PbO-based frit glass, but has a melting point of about 120 to 400 ° C. These so-called low melting point metal materials may be used. As such low melting point metal materials, In (indium: melting point 157 ° C.); indium-gold low melting point alloy; Sn ₈₀ Ag ₂₀ (melting point 220 to 370 ° C.), Sn ₉₅ Cu ₅ (melting point 227 to 370 ° C.) Tin (Sn) high-temperature solder such as Pb _97.5 Ag _2.5 (melting point 304 ° C.), Pb _94.5 Ag _5.5 (melting point 304 to 365 ° C.), Pb _97.5 Ag _1.5 Sn _1.0 (melting point 309 ° C.) (Pb) high temperature solder; zinc (Zn) high temperature solder such as Zn ₉₅ Al ₅ (melting point 380 ° C.); Sn ₅ Pb ₉₅ (melting point 300 to 314 ° C.), Sn ₂ Pb ₉₈ (melting point 316 to 322 ° C.) Examples thereof include tin-lead based standard solder such as C); brazing material such as Au ₈₈ Ga ₁₂ (melting point 381 ° C.) (the above subscripts all represent atomic%).

  When joining the three members of the cathode panel, the anode panel, and the joining member, the three members may be joined at the same time, or in the first stage, either the cathode panel or the anode panel and the joining member are joined, In the second stage, the other of the cathode panel or the anode panel and the joining member may be joined. If the three-party simultaneous bonding or the second stage bonding is performed in a high vacuum atmosphere, the space surrounded by the cathode panel, the anode panel, and the bonding member becomes a vacuum simultaneously with the bonding. Alternatively, after the three members are joined, the space surrounded by the cathode panel, the anode panel, and the joining member can be evacuated to create a vacuum. When exhausting after joining, the atmosphere pressure during joining may be either normal pressure or reduced pressure, and the gas constituting the atmosphere may be nitrogen gas or a gas belonging to Group 0 of the periodic table (for example, Ar gas) ) Is preferable, but it can also be performed in the atmosphere.

  When exhaust is performed, the exhaust can be performed through an exhaust pipe called a tip pipe connected in advance to the cathode panel and / or the anode panel. The exhaust pipe is typically a glass pipe, or a metal or alloy having a low coefficient of thermal expansion [for example, an iron (Fe) alloy containing 42 wt% nickel (Ni), 42 wt% nickel (Ni), A hollow tube made of an iron (Fe) alloy containing 6 wt% chromium (Cr)], and the above-mentioned frit glass or After being joined using a low melting point metal material and the space has reached a predetermined degree of vacuum, it is sealed off by thermal fusion or sealed by crimping. In addition, if the whole flat display device is once heated and then cooled before sealing, it is preferable because residual gas can be released into the space, and this residual gas can be removed out of the space by exhaust. .

Since the space sandwiched between the cathode panel and the anode panel is maintained in a vacuum state, locally, between the cathode panel and the anode panel, so that the flat display device is not damaged by atmospheric pressure, It is preferable to arrange a spacer. One row of spacers may be composed of a single spacer or a plurality of spacers. That is, the number of spacers along the X direction may be one or two or more, and depends on the specifications of the flat display device. The spacer base | substrate which comprises a spacer can be comprised from ceramics or glass material, for example. When the spacer substrate is composed of ceramics, the ceramics include aluminum silicate compounds such as mullite, aluminum oxides such as alumina, barium titanate, lead zirconate titanate, zirconia (zirconium oxide), cordiolite, borosilicate barium, Examples thereof include iron silicate, glass ceramic materials, titanium oxide, chromium oxide, magnesium oxide, iron oxide, vanadium oxide, nickel oxide added to these, and for example, JP 2003-524280 A The materials described in (1) can also be used. In this case, a spacer substrate can be manufactured by forming a so-called green sheet, firing the green sheet, and cutting the fired green sheet product. Glass materials include high strain point glass, low alkali glass, non-alkali glass, soda glass (Na ₂ O · CaO · SiO ₂ ), borosilicate glass (Na ₂ O · B ₂ O ₃ · SiO ₂ ), Examples thereof include stellite (2MgO · SiO ₂ ), lead glass (Na ₂ O · PbO · SiO ₂ ), and crystalline glass. In addition, it is preferable to chamfer the end portion of the spacer to remove the protruding portion. For example, the spacer may be fixed by being sandwiched between partition walls provided in the anode panel, or, for example, a spacer holding portion may be formed on the anode panel and / or the cathode panel and fixed by the spacer holding portion. do it.

An antistatic film, a resistor film, or the like may be provided on the side surface of the spacer (more specifically, the side surface of the spacer base). The material constituting the antistatic film preferably has a secondary electron emission coefficient close to 1. As the material constituting the antistatic film, a semiconductor such as Si or Ge, a semimetal such as graphite, an oxide, or a boride , Carbides, sulfides, nitrides, and the like can be used. Specifically, for example, compounds containing a metalloid element such as a semi-metal and MoSe _x such as _{graphite, CrO x, NdO x, CrAl} x O y, manganese _{oxide, La x Ba 2-x CuO} 4, La x Y Oxides such as _1-x CrO ₃ , borides such as AlB _x and TiB _x , carbides such as SiC, sulfides such as MoS _x and WS _x , and compounds of tungsten nitride and germanium nitride, BN, TiN, AlN In addition, for example, materials described in JP-T-2004-500688 and the like can also be used. Examples of the material constituting the resistor film include ruthenium oxide (RuO _x ) and cermet. The film provided on the surface of the spacer such as an antistatic film may be made of a single type of material or may be made of a plurality of types of materials. For example, the film may have a single-layer structure, and the layer may be composed of a plurality of types of materials, or the film is formed by laminating a plurality of layers, and each layer is composed of different materials. Also good. These films can be formed by well-known methods such as various PVD methods such as sputtering and vacuum deposition, various CVD methods, and screen printing methods. Moreover, what is necessary is just to set arbitrarily the film thickness of these films | membranes as needed.

  In the phosphor particles according to the first to third aspects of the present invention or the phosphor particles in the flat display device, a thin film made of a specific nitride, metal or carbide is formed on the surface of the phosphor particle body. The formed thin film has a function as a kind of filter layer having light absorption. That is, the phosphor region can be in a colored state, and the phosphor region itself has a characteristic of absorbing external light. In addition, in the phosphor particles according to the fourth aspect of the present invention or the phosphor particles in the flat display device, the light reflectance measured at a wavelength of 550 nm of the phosphor particle main body is defined, and the first of the present invention. In the phosphor particles according to the aspect 5 or the phosphor particles in the flat display device, the light reflectance measured at a wavelength of 550 nm of the material constituting the thin film is defined. Furthermore, the sixth aspect of the present invention In the phosphor particles according to the aspect, the average light reflectance of the phosphor particles is defined, and in the flat display device according to the sixth aspect or the seventh aspect of the present invention, the average of the anode panel The light reflectance is specified. Therefore, the display image does not appear whitish due to the reflection of the external light, and the external light is not reflected to exhibit a state like a white diffusion layer, so that the contrast due to the external light is not reduced. . Therefore, a flat display device having high display quality can be provided. Moreover, in a flat display device that performs color display, the phosphor particles constituting the red light emitting phosphor region, the phosphor particles constituting the green light emitting phosphor region, and the phosphor particles constituting the blue light emitting phosphor region Since it is possible to optimize the characteristic of reflecting external light every time, it is possible to avoid the occurrence of problems such as the luminance of the three primary colors of red, green and blue being uniformly reduced, and the antireflection film It is also unnecessary to provide a color filter layer.

  Hereinafter, the present invention will be described based on examples with reference to the drawings. Prior to that, a common outline of flat display devices in examples 1 to 3 will be described below. Here, the flat display devices in Examples 1 to 3 are cold cathode field emission display devices (hereinafter abbreviated as display devices). In the display devices according to the first to third embodiments, the strip-shaped gate electrode (for example, scanning electrode) 13 extends in the first direction (X direction), and the strip-shaped cathode electrode (for example, data electrode) 11 is the second. (Y direction).

  A schematic partial end view of the display device in the embodiment is the same as that shown in FIG. 4, and a schematic exploded perspective view of a part of the cathode panel CP and the anode panel AP when the cathode panel CP and the anode panel AP are disassembled. The figure is similar to that shown in FIG. That is, the display device according to the embodiment includes the anode panel AP in which the phosphor region 22 and the anode electrode 24 are provided on the substrate 20, and the first direction (X direction and row direction) and the second direction on the support 10. The cathode panel CP including the electron emission regions EA arranged in a two-dimensional matrix along the direction (Y direction, column direction) is bonded to the outer peripheral portion, more specifically, via the bonding member 27. Thus, the space SP sandwiched between the cathode panel CP and the anode panel AP is kept in a vacuum.

Here, the display device according to the embodiment includes an effective area EF and an invalid area NF surrounding the effective area EF. The effective area EF is a display area located substantially in the center that performs a practical image display function as a display device. The effective area EF is surrounded by an ineffective area NF that surrounds the frame. The space SP sandwiched between the cathode panel CP, the anode panel AP, and the bonding member 27 is maintained in a vacuum (pressure: for example, 10 ⁻³ Pa or less). The ineffective area NF of the cathode panel CP is provided with a through hole (not shown) for evacuation, and an exhaust pipe (not shown) called a tip pipe that is sealed after evacuation is provided around the through hole. Is attached.

In the embodiment, the field emission element constituting the electron emission region is constituted by, for example, a Spindt type field emission element. Spindt-type field emission devices
(A) a strip-shaped cathode electrode 11 formed on the support 10;
(B) an insulating layer 12 formed on the support 10 and the cathode electrode 11;
(C) a strip-shaped gate electrode 13 formed on the insulating layer 12;
(D) An opening 14 (provided in the gate electrode 13) provided in a portion of the gate electrode 13 and the insulating layer 12 located in the overlapping region where the cathode electrode 11 and the gate electrode 13 overlap, with the cathode electrode 11 exposed at the bottom. 14A of 1st opening parts, 2nd opening part 14B provided in the insulating layer 12, and,
(E) an electron emitting portion 15 provided on the cathode electrode 11 exposed at the bottom of the opening 14 and whose electron emission is controlled by applying a voltage to the cathode electrode 11 and the gate electrode 13;
It is composed of Here, the shape of the electron emission portion 15 is a conical shape. An interlayer insulating layer 16 is formed on the insulating layer 12, and a focusing electrode 17 is formed on the interlayer insulating layer 16.

  In the display device of the embodiment, the gate electrode 13 and the cathode electrode 11 are each formed in a strip shape in the directions (first direction and second direction) in which the projected images of the electrodes 13 and 11 are orthogonal to each other. In addition, a plurality of field emission elements are provided in a region where the projection images of these two electrodes overlap (corresponding to a region corresponding to one subpixel (subpixel), which is an electron emission region EA). For simplification of the drawing, FIG. 4 shows two electron emission portions 15 in each electron emission area EA. The electron emission areas EA are usually arranged in a two-dimensional matrix as described above in the effective area EF (area that functions as an actual display portion) of the cathode panel CP.

  The anode panel AP includes a substrate 20, a phosphor region 22 formed on the substrate 20 and having a predetermined pattern, and an anode electrode 24 formed thereon. One sub-pixel (one sub-pixel) includes an electron emission area EA and a phosphor area 22 on the anode panel side facing the electron emission area EA. In the effective area EF, the sub-pixels are arranged on the order of several hundred thousand to several million, for example. A light absorption layer (black matrix) 23 is formed on the substrate 20 between the phosphor region 22 and the phosphor region 22 in order to prevent color turbidity of the display image and occurrence of optical crosstalk. ing. The anode electrode 24 is made of aluminum (Al) having a thickness of about 0.3 μm, is in the form of a thin sheet that covers the effective region EF, and is provided so as to cover the phosphor region 22. In FIG. 5, illustration of the partition walls, the spacers, and the spacer holding portions is omitted. In the case of a color display device, one pixel (one pixel) is composed of a set of one red light emitting phosphor region 22R, one green light emitting phosphor region 22G, and one blue light emitting phosphor region 22B. Has been. A grid-like partition wall 21 surrounding each phosphor region 22 is formed on the substrate 20. The planar shape (corresponding to the inner contour line of the projected image of the partition wall side surface and a kind of opening region) of the portion surrounding the phosphor region 22 in the lattice-shaped partition wall 21 is a rectangular shape (rectangle), and these planes The shape (planar shape of the opening region) is arranged in a two-dimensional matrix (more specifically, a cross beam), and a lattice-like partition wall 21 is formed. A part of the partition functions as the spacer holding part 25.

In the display device of the embodiment, a plurality of rows of flat spacers 26 extending in the first direction (X direction) are arranged between the cathode panel CP and the anode panel AP. In addition, several tens to several hundreds of gate electrodes 13 are sandwiched between the spacers 26 and 26. The top surface and the bottom surface of the spacer 26 are parallel to the XY plane, the side surfaces are parallel to the XZ plane, and the end surfaces are parallel to the YZ plane. The spacer base 26A constituting the spacer 26 is made of, for example, aluminum oxide (Al ₂ O ₃ ), and the resistance value between the top surface and the bottom surface of the spacer 26 is about 1 × 10 ¹⁰ Ω (about ¹⁰ GΩ). Further, on the side surface of the spacer base 26A, for example, an antistatic film 26B made of chromium oxide (CrO _x ) having a thickness of 4 nm is formed based on an RF sputtering method. Chromium oxide has a relatively small secondary electron emission coefficient and is a very preferable material for the antistatic film under the condition that the spacer 26 is positively charged. Further, an end electrode layer 26C made of platinum (Pt) is formed on the top and bottom surfaces of the spacer base 26A. Alternatively, a nickel-vanadium alloy can be used as a material constituting the end electrode layer 26C.

In the display device according to the embodiment, the cathode electrode 11 is connected to the cathode electrode control circuit 31, the gate electrode 13 is connected to the gate electrode control circuit 32, and the focusing electrode is provided. Connected to a circuit (not shown), the anode electrode 24 is connected to an anode electrode control circuit 33. At the time of display operation of the display device, the anode voltage V _A applied from the anode electrode control circuit 33 to the anode electrode 24 is normally constant, for example, 5 to 15 kilovolts, specifically, for example, 9 kilovolts ( For example, d ₀ = 2.0 mm). On the other hand, regarding the voltage V _C applied to the cathode electrode 11 and the voltage V _G applied to the gate electrode 13 during the display operation of the display device,
(1) A method in which the voltage V _C applied to the cathode electrode 11 is constant and the voltage V _G applied to the gate electrode 13 is changed. (2) The voltage V _C applied to the cathode electrode 11 is changed and applied to the gate electrode 13. changing the voltage V _C is applied the voltage V _G to the method (3) a cathode electrode 11, fixed to, and, any method to change the voltage V _G applied to the gate electrode 13 may be employed but, In the display device in the embodiment, the above-described method (2) is adopted.

That is, during display operation of the display device, a relatively negative voltage (V _C ) is applied to the cathode electrode 11 from the cathode electrode control circuit 31, and a relatively positive voltage (V _G ) is applied to the gate electrode 13. When a focusing electrode is provided from the control circuit 32, for example, 0 V is applied to the focusing electrode from the focusing electrode control circuit, and a positive voltage (anode) higher than the gate electrode 13 is applied to the anode electrode 24. _A voltage V _A ) is applied from the anode electrode control circuit 33. In such a display device, when an image is displayed by a line sequential driving method, for example, a video signal is input from the cathode electrode control circuit 31 to the cathode electrode 11 and a scanning signal is input from the gate electrode control circuit 32 to the gate electrode 13. . When the cathode electrode 11 is a scan electrode and the gate electrode 13 is a data electrode, a scan signal is input from the cathode electrode control circuit 31 to the cathode electrode 11 and a video signal is input from the gate electrode control circuit 32 to the gate electrode 13. You can enter. Electrons are emitted from the electron emitter 15 based on the quantum tunnel effect due to an electric field generated when a voltage is applied between the cathode electrode 11 and the gate electrode 13, and the electrons are attracted to the anode electrode 24. It passes through and collides with the phosphor region 22. As a result, the phosphor region 22 is excited to emit light, and a desired image can be obtained. That is, the operation of this display device is basically controlled by the voltage V _G applied to the gate electrode 13 and the voltage V _C applied to the cathode electrode 11. The cathode electrode 11 is driven by a cathode electrode drive driver, and the gate electrode 13 is driven by a gate electrode drive driver. The cathode electrode control circuit 31, the gate electrode control circuit 32, the anode electrode control circuit 33, and the drive driver can be composed of known circuits.

  Example 1 is the phosphor particles according to the first, fourth, fifth and sixth aspects of the present invention, and the first, fourth and fifth aspects of the present invention. And a flat display device according to the sixth and seventh aspects.

As shown in the schematic cross-sectional view of FIG.
(A) a phosphor particle body, and
(B) A thin film made of any one nitride selected from the group consisting of chromium nitride, titanium nitride, tungsten nitride, and boron nitride formed on the surface of the phosphor particle body, specifically, Example 1, a thin film made of chromium nitride (CrN),
It is composed of In the display device of Example 1, the phosphor particles constituting the phosphor region 22 are:
(A) a phosphor particle body, and
(B) A thin film made of any one nitride selected from the group consisting of chromium nitride, titanium nitride, tungsten nitride, and boron nitride formed on the surface of the phosphor particle body, specifically, Example 1, a thin film made of the above nitride,
It is composed of

Here, the average film thickness of the thin film is 10 nm. By setting the thickness of the thin film to such a value, the phosphor particles can be reliably colored black, the reflection of external light can be suppressed, and the phosphor particle body passes through the thin film. The energy loss in the thin film of electrons that collide with can be suppressed. Furthermore, an SiO _x film having an average thickness of 0.2 nm is formed on the thin film.

  The phosphor particles emit blue light, and the composition of the phosphor particle main body is (ZnS: Ag, Al). The composition of the phosphor particle body in the phosphor particles constituting the blue light emitting phosphor region 22B in the display device is (ZnS: Ag, Al). The same applies to Examples 2 to 3 described later.

Alternatively, the phosphor particles emit red light, and the composition of the phosphor particle main body is (Y ₂ O ₂ S: Eu). The composition of the phosphor particle body in the phosphor particles constituting the red light emitting phosphor region 22R in the display device is (Y ₂ O ₂ S: Eu). The same applies to Examples 2 to 3 described later.

  The composition of the phosphor particles constituting the green light emitting phosphor region 22G in the display device is (ZnS: Cu, Al). However, since the color (body color) of the phosphor particles having such a composition is greenish, a thin film is not formed on the surface of the phosphor particles emitting green, but a phosphor emitting red or blue. Similar to the particles, a thin film may be formed on the surface. The same applies to Examples 2 to 3 described later.

In the phosphor particles emitting red light of Example 1, the average light reflectance measured at a wavelength of 550 nm (light reflectance of the phosphor particle main body, the thin film, and the entire SiO _x film) was 64.1%. The light reflectivity was 90.2% when only the phosphor particle main body emitting red light was measured by the same method. On the other hand, in the phosphor particles emitting blue light, the average light reflectance (light reflectance in the whole phosphor particle body, thin film, and SiO _x film) measured at a wavelength of 550 nm was 59.2%. The light reflectance when measuring only the phosphor particle main body emitting blue light by the same method was 86.5%. The light reflectance measured at a wavelength of 550 nm of the material constituting the thin film was 69.7% when the thickness of the thin film was measured at 10 nm.

  Hereinafter, the method for producing the phosphor particles by forming a thin film on the surface of the phosphor particle main body in Example 1 will be described with reference to FIGS. ) Will be described.

[Step-100]
First, the phosphor particle body is pretreated. That is, the phosphor particle main body is a fine particle having a diameter of 3 μm to 10 μm, for example, and thus has a large surface area. Therefore, when the atmosphere occupied by the phosphor particle main body is vacuum, the phosphor particle main body gradually releases the adsorbed gas such as moisture and oxygen gas adsorbed in the atmosphere, and forms a thin film by sputtering method. In this case, the chemical composition of the thin film may be shifted due to reaction with sputter ions or a target. Therefore, it is desirable to perform drying and degassing of the phosphor particle body as a pretreatment before forming the thin film.

  In the pretreatment, the phosphor particle body is baked in an inert gas stream to promote desorption of the adsorbed gas. Specifically, in an inert gas stream such as helium gas, argon gas, or nitrogen gas, avoid deterioration of the luminance of the phosphor particle body, avoid adverse effects on the composition and crystallinity, and in addition to oxygen gas, moisture, etc. The phosphor particle main body is heated to 200 to 400 ° C., which can desorb a representative adsorption gas, and degassed. The aggregate of phosphor particle bodies is heated with sufficient stirring so that the aggregate of phosphor particle bodies is heated uniformly. Then, after raising the temperature to a predetermined temperature, for example, heating is performed for 1 hour or longer so that the degassing is uniformly performed at the predetermined temperature. Even after cooling to room temperature, cooling in an inert gas stream is performed until the aggregate of the phosphor particle main bodies is sufficiently cooled. For heating, a rotary kiln type oven may be used as long as it can be kept airtight. It is desirable to store the phosphor particle main body after the pretreatment in a sealed container filled with an inert gas.

More specifically, 100 g of a phosphor particle main body having a particle diameter (50 volume% particle diameter represented by D ₅₀ ) of 5.0 μm was placed in an oven equipped with a stirring function, and a dry argon stream of 3 liters per minute After degassing by heating at 200 ° C. for 1 hour, argon gas was kept flowing to cool to room temperature.

[Step-110]
Next, a thin film made of CrN is formed on the surface of the phosphor particle main body by sputtering. That is, sputtering is performed at a predetermined target current-phosphor particle distance (hereinafter referred to as “T-S distance”) for a predetermined time under a predetermined gas composition, flow rate and pressure at a predetermined sputtering current density. Do. In order to form a thin film having a uniform film thickness on the surface of the phosphor particle main body, sputtering is performed while stirring the phosphor particle main body.

  As for stirring, a phenomenon in which air molecules existing between the phosphor particle main bodies function as a cushion layer and assist the flow of the phosphor particle main bodies does not occur under a vacuum condition under normal pressure. In addition, when the friction between the phosphor particles on which the thin film is formed is large, the phenomenon that the phosphor particles are entangled and stirred in a large lump state frequently occurs. As a result of the above, in many cases, during the sputtering, there is a problem that many lumped phosphor particles (phosphor particle aggregates) are spilled off. As a countermeasure against such a problem, the horizontal stirring blade 102 and the vertical stirring blade 103 are separately provided in the container 100 in order to prevent the formation of phosphor particle aggregates. It is attached to the rotating shaft 101. Then, the vertical stirring blades 103 are divided narrowly to prevent the phosphor particle main body from being stirred in a lump. As blades 102 for stirring in the horizontal direction, blades in the form of knife edges are arranged vertically in the stirring direction. Even if the lump 103 and the lump 102 for agitation in the horizontal direction are rotated around the rotation axis 101, the lump of phosphor particles (phosphor particle aggregates) are generated. The blades 102 and 103 can be used for separation. By providing such blades 102 and 103, the surface of the layered phosphor particles or the phosphor particle main body in the container 100 can be obtained without overflowing the phosphor particles or the phosphor particle main body outside the container 100. The uniform height can be maintained, and as a result, the T-S distance can be stabilized, so that a thin film can be stably formed on the surface of the phosphor particle main body. In FIG. 2, reference numeral 104 represents a scraper for scraping off the phosphor particles and the phosphor particle main body adhering to the side wall of the container 100, and reference numeral 105 is a process gas pipe for supplying process gas. Reference numeral 110 represents a target.

  Regarding the sputtering conditions, it is important from the viewpoint of stabilizing the chemical composition of the thin film to be formed that the composition and pressure of the process gas to be introduced are kept constant and the distance between T and S is kept constant. Within a pressure range of 0.3 Pa to 15 Pa, for example, a TS distance of 15 to 100 millimeters is optimal. When the T-S distance is shorter than 15 millimeters, the layered phosphor particles in the container or the upper part of the phosphor particle main body directly enters the plasma atmosphere, and the surface of the phosphor particle main body is etched. There is a possibility that the crystallinity of the surface of the phosphor particle main body is deteriorated and the luminance of the phosphor particles is lowered. On the other hand, when the T-S distance is longer than 100 millimeters, the frequency at which the sputter ions collide with the gas molecules before reaching the surface of the phosphor particle main body increases, so that the plasma spreads beyond the desired state, and the thin film There is a risk that the efficiency of forming the film will be reduced.

  More specifically, a thin film made of CrN is formed on the surface of the phosphor particle body under the following sputtering conditions. In addition, by mixing a trace amount of oxygen gas into the process gas, it is possible to further prevent the phosphor particle main body from aggregating in the container during sputtering.

[Table 1]
Target: Chrome (Cr)
Process gas: Ar / N ₂ / O ₂ = 20/8 / 0.1 (volume ratio)
Sputtering power: 500W
TS distance: 75mm

[Step-120]
Thereafter, a SiO _x film is formed under the following DC sputtering conditions. Thus, phosphor particles having a two-layer structure of a thin film and a SiO _x film on the surface could be obtained.

[Table 2]
Target: n-type silicon (Si)
Process gas: Ar / O ₂ = 10 / 0.2 (volume ratio)
Sputtering power: 500W
TS distance: 75mm

  Hereinafter, the anode panel AP will be described with reference to FIGS. 6A to 6C and FIGS. 7A to 7B which are schematic partial end views of the substrate 20 and the like constituting the anode panel AP. The anode panel AP in Examples 2 to 3 to be described later can also be manufactured by the same method.

[Step-A1]
First, a grid-like partition wall 21 is formed on the substrate 20 (see FIG. 6A). The partition wall 21 also functions as the spacer holding part 25. Specifically, after forming the photosensitive polyimide resin layer on the substrate 20 based on the coating method, the photosensitive polyimide resin layer is selectively removed by photolithography technique and development, and then the remaining photosensitive polyimide resin layer Is fired to form a grid-like partition wall 21 and a spacer holding portion 25. The size of the opening region of the partition wall 21 was approximately vertical × horizontal × height = 280 μm × 100 μm × 40 μm. Before forming the partition walls 21, it is preferable to form a light absorption layer (black matrix) 23 made of, for example, chromium oxide on the surface of the portion of the substrate 20 where the partition walls 21 are to be formed. Specifically, a low melting point glass paste colored black with a metal oxide such as cobalt oxide is printed on the substrate 20 by a screen printing method, and then the low melting point glass paste is baked to form a lattice-shaped light. The absorption layer 23 may be formed. In addition, the thickness of the light absorption layer 23 was about 8 μm.

[Step-A2]
Next, a phosphor region 22 is formed on the portion of the substrate 20 surrounded by the partition walls 21 (see FIG. 6B). Specifically, in order to form the red light-emitting phosphor region 22R, the red light-emitting phosphor obtained in [Step-100] to [Step-120] described above, for example, in polyvinyl alcohol (PVA) resin and water. After the particles are dispersed and a red light emitting phosphor slurry added with ammonium bichromate is applied to the entire surface, the red light emitting phosphor slurry is dried. Thereafter, the portion of the red light emitting phosphor slurry in which the red light emitting phosphor region 22R is to be formed is irradiated with ultraviolet rays from the substrate side to expose the red light emitting phosphor slurry. The red light emitting phosphor slurry is gradually cured from the substrate side. The thickness of the red light-emitting phosphor region 22R to be formed is determined by the amount of ultraviolet light applied to the red light-emitting phosphor slurry. Here, for example, the irradiation time of the ultraviolet light with respect to the red light emitting phosphor slurry is adjusted so that the thickness of the red light emitting phosphor region 22R is about 8 μm. Thereafter, the red light-emitting phosphor region 22R can be formed in a predetermined region by developing the red light-emitting phosphor slurry. Hereinafter, the green light emitting phosphor region 22G is formed by dispersing the conventional green light emitting phosphor particles and performing the same treatment on the green light emitting phosphor slurry to which ammonium dichromate is added. The blue light-emitting phosphor particles obtained in [Step-100] to [Step-120] were dispersed, and the blue light-emitting phosphor slurry added with ammonium dichromate was further subjected to the same treatment. A blue light emitting phosphor region 22B is formed. The method for forming the phosphor region is not limited to the method described above, and each phosphor region may be formed by, for example, a screen printing method. Further, the order of forming the red light-emitting phosphor region 22R, the green light-emitting phosphor region 22G, and the blue light-emitting phosphor region 22B is essentially arbitrary.

[Step-A3]
Thereafter, a resin layer 28 (often referred to as an intermediate film) is formed on the top surface of the partition wall 21 and on the phosphor region 22 (see FIG. 6C). Specifically, the resin layer 28 can be formed based on a metal mask printing method, a screen printing method, or an ink jet printing method. The resin layer 28 is a kind of varnish in a broad sense, and is a cellulose derivative, generally a mixture of nitrocellulose as a main component dissolved in a volatile solvent such as a lower fatty acid ester, or other synthetic polymer. It is composed of the urethane lacquer, acrylic lacquer, and water-soluble acrylic emulsion used. Next, the resin layer 28 is dried. That is, the substrate 20 is carried into a drying furnace and dried at a predetermined temperature. The drying temperature of the resin layer 28 is preferably in the range of 50 ° C. to 90 ° C., for example, and the drying time of the resin layer 28 is preferably in the range of several minutes to several tens of minutes, for example. Of course, as the drying temperature increases and decreases, the drying time decreases.

[Step-A4]
After that, an anode electrode 24 that covers the display area is formed (see FIG. 7A). Specifically, an anode electrode 24 made of aluminum (Al) is formed by various vacuum deposition methods or sputtering methods so as to cover the resin layer 28 formed on the top surface of the partition wall 21 and the phosphor region 22. To do. The thickness of the formed anode electrode 24 was about 0.3 μm.

[Step-A5]
Next, the resin layer 28 is removed by heat treatment (see FIG. 7B). Specifically, the resin layer 28 is baked at about 400 ° C. By this firing treatment, the resin layer 28 is burned and burned out, and the anode electrode 24 made of aluminum (Al) is left on the phosphor region 22 and the partition wall 21. The gas generated by the combustion of the resin layer 28 is discharged to the outside through, for example, fine holes generated in the anode electrode 24. Since the holes are fine, they do not seriously affect the structural strength and image display characteristics of the anode electrode 24. Through the above steps, the anode panel AP can be completed.

  Hereinafter, a method for manufacturing a Spindt-type field emission device is shown in FIGS. 8A, 8B, and 9A, which are schematic partial end views of the support 10 and the like constituting the cathode panel CP. As will be described with reference to (B), the cathode panel CP in Examples 2 to 3 to be described later can also be manufactured by the same method. In the method described below, the description of the process of forming the interlayer insulating layer 16 and the focusing electrode 17 is omitted.

  This Spindt-type field emission device can be basically obtained by a method of forming the conical electron emission portion 15 by vertical vapor deposition of a metal material. That is, the vapor deposition particles are perpendicularly incident on the first opening 14A provided in the gate electrode 13, but use the shielding effect by the overhanging deposit formed near the opening end of the first opening 14A. Thus, the amount of vapor deposition particles reaching the bottom of the second opening 14B is gradually reduced, and the electron emission portion 15 that is a conical deposit is formed in a self-aligning manner. Here, a method of forming the separation layer 18 in advance over the gate electrode 13 and the insulating layer 12 in order to facilitate removal of unnecessary overhang-like deposits will be described. In the drawing for explaining the method of manufacturing the field emission device, only one electron emission portion is shown.

[Step-B0]
First, a cathode electrode conductive material layer made of, for example, polysilicon is formed on the support 10 made of, for example, a glass substrate by a plasma CVD method, and then the cathode electrode conductive material layer is formed based on a lithography technique and a dry etching technique. Is patterned to form a strip-like cathode electrode 11. Thereafter, an insulating layer 12 made of SiO _{2 is} formed on the entire surface by a CVD method.

[Step-B1]
Next, a gate electrode conductive material layer (for example, a TiN layer) is formed on the insulating layer 12 by a sputtering method, and then the gate electrode conductive material layer is patterned by a lithography technique and a dry etching technique. Thus, the strip-shaped gate electrode 13 can be obtained. The strip-shaped cathode electrode 11 extends in the left-right direction in the drawing, and the strip-shaped gate electrode 13 extends in the direction perpendicular to the drawing.

  The gate electrode 13 is formed by a well-known thin film such as a PVD method such as a vacuum evaporation method, a CVD method, a plating method such as an electroplating method or an electroless plating method, a screen printing method, a laser ablation method, a sol-gel method, a lift-off method. You may form by the combination of formation and an etching technique as needed. According to the screen printing method or the plating method, for example, a strip-shaped gate electrode can be directly formed.

[Step-B2]
Thereafter, a resist layer is formed again, the first opening 14A is formed in the gate electrode 13 by etching, the second opening 14B is formed in the insulating layer, and the cathode electrode 11 is formed at the bottom of the second opening 14B. Then, the resist layer is removed. Thus, the structure shown in FIG. 8A can be obtained.

[Step-B3]
Next, nickel (Ni) is obliquely deposited on the insulating layer 12 including the gate electrode 13 while rotating the support 10 to form a release layer 18 (see FIG. 8B). At this time, by selecting a sufficiently large incident angle of the vapor deposition particles with respect to the normal of the support 10 (for example, an incident angle of 65 to 85 degrees), nickel is hardly deposited on the bottom of the second opening 14B. A release layer 18 can be formed on the gate electrode 13 and the insulating layer 12. The release layer 18 protrudes in a bowl shape from the opening end of the first opening 14A, whereby the diameter of the first opening 14A is substantially reduced.

[Step-B4]
Next, for example, molybdenum (Mo) is vertically deposited as an electrically conductive material on the entire surface (incident angle: 3 to 10 degrees). At this time, as shown in FIG. 9A, as the conductive member layer 19 having an overhang shape grows on the release layer 18, the substantial diameter of the first opening 14A is gradually reduced. The vapor deposition particles that contribute to the deposition at the bottom of the second opening 14B are gradually limited to those that pass near the center of the first opening 14A. As a result, a conical deposit is formed at the bottom of the second opening 14 </ b> B, and this conical deposit becomes the electron emission portion 15.

[Step-B5]
Thereafter, as shown in FIG. 9B, the peeling layer 18 is peeled off from the surfaces of the gate electrode 13 and the insulating layer 12 by a lift-off method, and the conductive member layer 19 above the gate electrode 13 and the insulating layer 12 is selected. To remove. Thus, a cathode panel CP in which a plurality of Spindt type field emission devices are formed can be obtained. After that, it is preferable to perform isotropic etching to retract the side wall surface of the insulating layer 12 in the opening 14 so that the end of the gate electrode 13 protrudes in the first opening of the gate electrode 13. .

[Step-C1]
Then, the anode panel AP and the cathode panel CP obtained based on the method described above are assembled. Specifically, the spacer 26 is attached to the spacer holding portion 25 provided in the anode panel AP, and the anode panel AP and the cathode panel CP are arranged so that the phosphor region 22 and the electron emission region EA face each other, and the anode The panel AP and the cathode panel CP (more specifically, the substrate 20 and the support 10) are joined at the outer peripheral portion via a joining member 27 made of a frame body having a height of about 2 mm made of ceramics or glass. To do. At the time of joining, frit glass as an adhesive layer is applied to the joining part between the joining member 27 and the anode panel AP and the joining part between the joining member 27 and the cathode panel CP, and the frit glass is dried by preliminary firing. Then, the anode panel AP, the cathode panel CP, and the bonding member 27 are bonded together, and the main baking is performed at about 450 ° C. for 10 to 30 minutes. Thereafter, the space SP surrounded by the anode panel AP, the cathode panel CP, and the joining member 27 is exhausted through a through hole (not shown) and an exhaust pipe (not shown), and the pressure of the space SP is 10 ⁻⁴ Pa. When reaching the degree, the exhaust pipe is sealed by heating and melting. In this manner, the space SP surrounded by the anode panel AP, the cathode panel CP, and the bonding member 27 can be evacuated. Alternatively, for example, the bonding member 27, the anode panel AP, and the cathode panel CP may be bonded together in a high vacuum atmosphere. Alternatively, depending on the structure of the display device, the anode panel AP and the cathode panel CP may be bonded together by using only an adhesive layer without a frame. Thereafter, wiring connection with necessary external circuits is performed, and the display device is completed. In the second embodiment to be described next, a display device can be obtained by the same method.

  The measurement result of the average light reflectance of the anode panel AP in the display device of Example 1 obtained in this way is shown by a thick solid curve in FIG.

  Moreover, the measurement result (represented by Comparative Example 1) of the average light reflectance of the anode panel AP in the display device manufactured by the same process as that of Example 1 in which the thin film is made of chromium oxide is shown in FIG. Shown in thin solid lines.

  Furthermore, the display device manufactured in [Step-A1] to [Step-A5], [Step-B0] to [Step-B5], and [Step-C1] without forming a thin film on the phosphor particles. The measurement results (represented by Comparative Example 2) of the average light reflectance of the anode panel AP in FIG. 3 are also shown by dotted lines in FIG.

  In FIG. 3, the maximum value of the average light reflectance in the anode panel of Comparative Example 2 is 76%. In the anode panel AP, the light incident from the substrate 20 is partially absorbed in the phosphor region 22. This is because part of the light is reflected and also absorbed by the light absorption layer (black matrix) 23.

In the display device of the first embodiment, when the respective values of the average reflectance of the anode panel AP measured at a wavelength of 450nm and 650nm through the substrate 20 was set to Rf ₄₅₀ and Rf _650, the value of Rf ₄₅₀ and Rf ₆₅₀ is Each was as follows. Furthermore, the value of the average light reflectance Rf ₅₅₀ of the anode panel AP measured through the substrate 20 at a wavelength of 550 nm was as follows. The average light reflectance is measured for the entire anode panel AP. That is, the average light reflectance of the anode panel AP includes elements constituting the anode panel AP such as the substrate 20, the partition wall 21, the phosphor region 22, the light absorption layer (black matrix) 23, the anode electrode 24, and the spacer 26. Average light reflectance. From FIG. 3, it can be seen that in the display device of Example 1, the light incident from the substrate 20 is suppressed from being reflected by the phosphor region 22 as compared with Comparative Example 1 or Comparative Example 2. Further, it can be seen that the wavelength dependency of the incident light when the phosphor region 22 absorbs the light incident from the substrate 20, that is, the value of Rf ₆₅₀ / Rf ₄₅₀ is larger in the first embodiment. That is, even when white light enters the phosphor region 22 from the substrate 20, in Example 1, the reflection or absorption of light by the phosphor particles (phosphor region) is made more uniform. It can be said that it is in the direction.

[Table 3]
Rf ₄₅₀ Rf ₆₅₀ Rf ₆₅₀ / Rf ₄₅₀ Rf ₅₅₀
Example 1 36.8% 37.5% 1.02 39.5%
Comparative Example 1 65.1% 47.7% 0.73 54.1%
Comparative Example 2 73.6% 50.7% 0.69 58.4%

  Example 2 shows phosphor particles according to the second, fourth, fifth, and sixth aspects of the present invention, and the second, fourth, and fifth aspects of the present invention. And a flat display device according to the sixth and seventh aspects.

The phosphor particles of Example 2 are
(A) a phosphor particle body, and
(B) formed of any one kind of metal selected from the group consisting of chromium, titanium, vanadium, manganese, cobalt, nickel, copper, tungsten, palladium, platinum, and gold formed on the surface of the phosphor particle body. A thin film, specifically, in Example 2, a thin film made of chromium (Cr),
It is composed of In addition, the metal which comprises a thin film differs from the element which comprises the activator contained in a fluorescent substance particle main body. In the display device of Example 2, the phosphor particles constituting the phosphor region 22 are:
(A) a phosphor particle body, and
(B) formed of any one kind of metal selected from the group consisting of chromium, titanium, vanadium, manganese, cobalt, nickel, copper, tungsten, palladium, platinum, and gold formed on the surface of the phosphor particle body. A thin film, specifically, in Example 2, a thin film made of the above metal,
It is composed of Here, the average film thickness of the thin film is 15 nm. By setting the thickness of the thin film to such a value, the phosphor particles can be reliably colored black, the reflection of external light can be suppressed, and the phosphor particle body passes through the thin film. The energy loss in the thin film of electrons that collide with can be suppressed. Furthermore, an SiO _x film having an average thickness of 0.3 nm is formed on the thin film. The schematic cross-sectional view of the phosphor particles of Example 2 is the same as that shown in FIG.

In the phosphor particles emitting red light in Example 2, the average light reflectance (light reflectance in the whole of the phosphor particle main body, the thin film, and the SiO _x film) measured at a wavelength of 550 nm was 54.1%. The light reflectivity was 90.1% when only the phosphor particle main body emitting red light was measured by the same method. Further, in the phosphor particles emitting green light, the average light reflectance (light reflectance in the whole of the phosphor particle main body, the thin film, and the SiO _x film) measured at a wavelength of 550 nm was 71.3%. In addition, the light reflectance when only the phosphor particle main body emitting green light was measured by the same method was 97.1%. Furthermore, in the phosphor particles emitting blue light, the average light reflectance (light reflectance in the entirety of the phosphor particle main body, the thin film, and the SiO _x film) measured at a wavelength of 550 nm was 69.0%. The light reflectance when measuring only the phosphor particle main body emitting blue light by the same method was 86.9%. The light reflectance measured at a wavelength of 550 nm of the material constituting the thin film was 72.8% when the thickness of the thin film was measured at 10 nm. Furthermore, in the display device of Example 2, when the average light reflectance values of the anode panel AP measured at wavelengths of 450 nm and 650 nm through the substrate 20 are Rf ₄₅₀ and Rf ₆₅₀ , respectively.
Rf ₄₅₀ = 38.8%
Rf ₆₅₀ = 42.2%
Rf ₆₅₀ / Rf ₄₅₀ = 1.09
Met. Further, the average light reflectance Rf ₅₅₀ of the anode panel AP measured at a wavelength of 550 nm through the substrate 20 is Rf ₅₅₀ = 46.6%.
Met.

  Hereinafter, a method for producing phosphor particles by forming a thin film on the surface of the phosphor particle main body in Example 2 will be described.

[Step-200]
First, the phosphor particle main body is pretreated in the same manner as in [Step-100] of Example 1.

[Step-210]
Next, in the same manner as in [Step-110] of Example 1, a thin film is formed on the surface of the phosphor particle main body that emits red and blue light by sputtering. Specifically, after forming a thin film having a thickness of 5 nm on the surface of the phosphor particle main body under the sputtering conditions shown in Table 4-1, the thin film having a thickness of 10 nm is formed under the sputtering conditions shown in Table 4-2. Further form. Further, a thin film having a thickness of 1.5 nm is formed on the surface of the phosphor particle main body emitting green light under the sputtering conditions shown in Table 4-2.

[Table 4-1]
Target: Chrome (Cr)
Process gas: Ar / N ₂ / O ₂ = 20/8 / 0.1 (volume ratio)
Sputtering power: 500W
TS distance: 75 mm [Table 4-2]
Target: Chrome (Cr)
Process gas: Ar / O ₂ = 10 / 0.2 (volume ratio)
Sputtering power: 500W
TS distance: 75mm

[Step-220]
Thereafter, a SiO _x film is formed on the thin film in the same manner as in [Step-120] in Example 1.

  Example 3 shows phosphor particles according to the third, fourth, fifth, and sixth aspects of the present invention, and the third, fourth, and fifth aspects of the present invention. And a flat display device according to the sixth and seventh aspects.

The phosphor particles of Example 3 are
(A) a phosphor particle body, and
(B) A thin film made of any one carbide selected from the group consisting of silicon carbide, titanium carbide and tungsten carbide formed on the surface of the phosphor particle main body, specifically, in Example 3. Is a thin film made of silicon carbide (SiC) containing 80 mol% of carbon,
It is composed of In the display device of Example 3, the phosphor particles constituting the phosphor region 22 are:
(A) a phosphor particle body, and
(B) A thin film made of any one carbide selected from the group consisting of silicon carbide, titanium carbide and tungsten carbide formed on the surface of the phosphor particle main body, specifically, in Example 3. Is a thin film made of the above carbide,
It is composed of Here, the average film thickness of the thin film is 10 nm. By setting the thickness of the thin film to such a value, the phosphor particles can be surely colored to a slightly brownish black, and reflection of external light can be suppressed, and the thin film can pass through the thin film. The energy loss in the thin film of electrons colliding with the phosphor particle main body can be suppressed. Furthermore, an SiO _x film having an average thickness of 0.3 nm is formed on the thin film. The schematic cross-sectional view of the phosphor particles of Example 3 is the same as that shown in FIG.

In the phosphor particles emitting red light in Example 3, the average light reflectance measured at a wavelength of 550 nm (light reflectance of the phosphor particle main body, the thin film, and the entire SiO _x film) was 54.6%. The light reflectivity was 90.2% when only the phosphor particle main body emitting red light was measured by the same method. On the other hand, in the phosphor particles emitting blue light, the average light reflectance (light reflectance in the whole of the phosphor particle main body, the thin film, and the SiO _x film) measured at a wavelength of 550 nm was 51.4%. The light reflectivity was 94.2% when only the phosphor particle main body emitting blue light was measured by the same method. Further, the light reflectance measured at a wavelength of 550 nm of the material constituting the thin film was 60.8% when the thickness of the thin film was measured at 10 nm. Furthermore, in the display device of Example 3, when the average light reflectance values of the anode panel AP measured through the substrate 20 at wavelengths of 450 nm and 650 nm are Rf ₄₅₀ and Rf ₆₅₀ , respectively.
Rf ₄₅₀ = 35.2%
Rf ₆₅₀ = 36.0%
Rf ₆₅₀ / Rf ₄₅₀ = 1.02
Met. Further, the average light reflectance Rf ₅₅₀ of the anode panel AP measured at a wavelength of 550 nm through the substrate 20 is Rf ₅₅₀ = 38.2%.
Met.

  Hereinafter, a method for producing phosphor particles by forming a thin film on the surface of the phosphor particle main body in Example 3 will be described.

[Step-300]
First, the phosphor particle main body is pretreated in the same manner as in [Step-100] of Example 1.

[Step-310]
Next, in the same manner as in [Step-110] in Example 1, a thin film is formed on the surface of the phosphor particle main body by sputtering. Specifically, a thin film is formed on the surface of the phosphor particle main body under the following sputtering conditions.

[Table 5]
Target: SiC (carbon content 80 mol%)
Process gas: Ar = 100% (volume ratio)
Sputtering power: 500W
TS distance: 75mm

[Step-320]
Thereafter, a SiO _x film is formed on the thin film in the same manner as in [Step-120] in Example 1.

  As mentioned above, although this invention was demonstrated based on the preferable Example, this invention is not limited to these Examples. The configurations and structures of the flat display device, the cathode panel and the anode panel, the cold cathode field emission display device and the cold cathode field emission device described in the embodiments are examples, and can be changed as appropriate. The display device has been described by taking color display as an example, but it may also be a single color display.

  In the field emission device, a mode in which one electron emission portion corresponds to one opening has been described. However, depending on the structure of the field emission device, a mode in which a plurality of electron emission portions correspond to one opening. Alternatively, one electron emission portion may correspond to a plurality of openings. Alternatively, a plurality of first openings may be provided in the gate electrode, a second opening connected to the plurality of first openings related to the insulating layer may be provided, and one or a plurality of electron emission portions may be provided. .

The electron emission region can also be constituted by an electron emission element commonly called a surface conduction electron emission element. This surface conduction electron-emitting device is formed on a support made of glass, for example, tin oxide (SnO ₂ ), gold (Au), indium oxide (In ₂ O ₃ ) / tin oxide (SnO ₂ ), carbon, palladium oxide ( A pair of electrodes made of a conductive material such as (PdO), having a very small area and arranged with a predetermined gap (gap) are formed in a matrix. A carbon thin film is formed on each electrode. The row direction wiring is connected to one electrode (for example, the first electrode) of the pair of electrodes, and the column direction wiring is connected to the other electrode (for example, the second electrode) of the pair of electrodes. It has a configuration. By applying a voltage to the pair of electrodes (first electrode and second electrode), an electric field is applied to the carbon thin films facing each other across the gap, and electrons are emitted from the carbon thin film. By causing the electrons to collide with the phosphor region on the anode panel, the phosphor region is excited to emit light, and a desired image can be obtained. Alternatively, the electron emission region can be formed from a metal / insulating film / metal type element.

FIG. 1 is a schematic cross-sectional view of the phosphor particles of Examples 1 to 3. 2A and 2B are conceptual diagrams of a sputtering apparatus for producing phosphor particles by forming a thin film on the surface of the phosphor particle main body in Examples 1 to 3. FIG. FIG. 3 shows the measurement result of the average light reflectance of the anode panel constituting the flat display device of Example 1, and the measurement of the average light reflectance of the anode panel constituting the flat display devices of Comparative Example 1 and Comparative Example 2. It is a graph which shows a result. FIG. 4 is a schematic partial end view of a cold cathode field emission display device having a Spindt type cold cathode field emission device as a flat display device. FIG. 5 is a schematic exploded perspective view of a part of the cathode panel and the anode panel when the cathode panel and the anode panel constituting the cold cathode field emission display shown in FIG. 4 are disassembled. 6A to 6C are schematic partial end views of a substrate and the like for explaining a method of manufacturing an anode panel constituting the flat display device of the embodiment. 7A to 7B are schematic partial end faces of a substrate and the like for explaining a method for manufacturing an anode panel constituting the flat display device of the embodiment, following FIG. 6C. FIG. FIGS. 8A and 8B are schematic partial end views of a support and the like for explaining a method for manufacturing a Spindt-type cold cathode field emission device. FIGS. 9A and 9B are schematic partial end views of a support and the like for explaining the manufacturing method of the Spindt-type cold cathode field emission device following FIG. 8B. .

Explanation of symbols

DESCRIPTION OF SYMBOLS 10 ... Support body, 11 ... Cathode electrode, 12 ... Insulating layer, 13 ... Gate electrode, 14, 14A, 14B ... Opening part, 15 ... Electron emission part, 16 ... Interlayer insulation layer, 17 ... convergence electrode, 18 ... release layer, 19 ... conductive member layer, 20 ... substrate, 21 ... partition, 22, 22R, 22G, 22B ... fluorescence Body region, 23 ... light absorption layer (black matrix), 24 ... anode electrode, 25 ... spacer holding part, 26 ... spacer, 26A ... spacer base, 26B ... antistatic film , 26C ... end electrode layer, 27 ... bonding member, 28 ... resin layer, 31 ... cathode electrode control circuit, 32 ... gate electrode control circuit, 33 ... anode electrode control circuit , 100 ... container, 101 ... rotating shaft, 102 ... Horizontal stirring blades, 103 ... Vertical stirring blades, 104 ... Scraper, 105 ... Process gas piping, 110 ... Target, CP ... Cathode panel, AP ... Anode panel, EA ... Electron emission area, EF ... Effective area, NF ... Invalid area

Claims (5)

And an anode panel having fluorescent region and an anode electrode is provided on the substrate, on the support and the cathode panel having electron emitting regions arranged in a two-dimensional matrix composed are joined at the outer peripheral portion, the cathode space sandwiched by the panel and said anode panel is held in a vacuum,
The phosphor particles constituting the phosphor region are:
(A) a phosphor particle body light reflectance is 98% or less as measured at a wavelength of 550 nm,
(B) formed on the surface of the phosphor particle body, and a thin film made of any of the following (a) ~ (c),
(C) a SiO _X film formed on the surface of the thin film
Consists of
When each value of the average reflectance of the anode panel measured at a wavelength of 450nm and 650nm through the substrate was Rf ₄₅₀ and Rf _650,
0. 9 ≦ Rf ₆₅₀ / Rf ₄₅₀ ≦ 1.1
A flat display device that satisfies the above requirements.
(A) A thin film made of any one nitride selected from the group consisting of chromium nitride, titanium nitride, tungsten nitride, and boron nitride
(B) A thin film made of any one metal selected from the group consisting of chromium, titanium, vanadium, manganese, cobalt, nickel, copper, tungsten, palladium, platinum and gold.
(C) A thin film made of any one carbide selected from the group consisting of silicon carbide, titanium carbide and tungsten carbide. It said phosphor particles A display device according to claim 1 for emitting red light. It said phosphor particles A display device according to claim 1 which emits blue light. The average thickness of the thin film, flat-panel display according to any one of a 2 × 10 ^-9 m to 5 × 10 ^-8 m claims 1 to 3. The plane according to any one of claims 1 to 4, wherein the light reflectance measured at a wavelength of 550 nm of the material constituting the thin film is 85% or less when the thickness of the thin film is measured at 10 nm. Type display device.

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