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JP5332843B2 - X-ray holography measurement method - Google Patents
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JP5332843B2 - X-ray holography measurement method - Google Patents

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JP5332843B2
JP5332843B2 JP2009095444A JP2009095444A JP5332843B2 JP 5332843 B2 JP5332843 B2 JP 5332843B2 JP 2009095444 A JP2009095444 A JP 2009095444A JP 2009095444 A JP2009095444 A JP 2009095444A JP 5332843 B2 JP5332843 B2 JP 5332843B2
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健二 野村
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Abstract

<P>PROBLEM TO BE SOLVED: To perform both kinds of measurement, the diffracted X-ray holographic measurement and the transmission X-ray holographic measurement, regarding the method of X-ray holographic measurement. <P>SOLUTION: A specimen for measurement includes an X-ray absorbing-film absorbing X-rays on the other surface of a base material, as opposed to one surface thereof, the base material including a measuring part; a first opening bored through the absorbing film, in the other surface corresponding to the measuring part; a second opening bored through the absorbing film, the base material, and a domain adjoining the measuring part; and a crystal piece placed above the second opening. X-rays are applied to the other surface of each specimen, facing the one surface thereof, to overlap diffracted light from the measuring part with diffracted light from the crystal piece on a detection surface positioned on the one surface side. Interference fringes formed by the overlapping are analyzed as a hologram. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

本発明はX線ホログラフィ測定方法に関するものであり、例えば、測定用試料における同一の測定部から回折情報とX線吸収情報とを得るための構成に関するものである。   The present invention relates to an X-ray holography measurement method, for example, a configuration for obtaining diffraction information and X-ray absorption information from the same measurement unit in a measurement sample.

従来より、試料における諸物性の解析のためにX線を用いた回折による試料解析方法が行われている。通常使用されているX線は、X線のコヒーレント長(可干渉長)よりもビームサイズの方が大きいため、空間的に離れた2点からの波の間に干渉性がないインコヒーレントなX線である。   Conventionally, a sample analysis method by diffraction using X-rays has been performed in order to analyze various physical properties of a sample. Normally used X-rays have a beam size larger than the coherent length of X-rays (coherence length), so that incoherent X is not coherent between two spatially separated waves. Is a line.

インコヒーレントX線で回折測定を行った場合、実験で得られるX線回折強度では、位相情報が消失しているため、実空間の構造を得ることができない。そこで、ピンホールを測定試料の上流部に設置することで、X線のコヒーレント長よりも小さなビームを切り出し、得られたコヒーレントX線を用いた回折測定が試みられている。代表的な例として、Robinson等による金のナノ結晶の回折測定がある(例えば、非特許文献1参照)。   When diffraction measurement is performed with incoherent X-rays, phase information is lost in the X-ray diffraction intensity obtained in the experiment, and thus a real space structure cannot be obtained. Therefore, a diffraction measurement using a coherent X-ray obtained by cutting out a beam smaller than the coherent length of the X-ray by placing a pinhole upstream of the measurement sample has been attempted. A typical example is diffraction measurement of gold nanocrystals by Robinson et al. (See, for example, Non-Patent Document 1).

得られた回折測定の結果は、Hybrid Input Output法などの位相回復アルゴリズムを用いて位相を決定し、実空間の構造を得ることが可能である(例えば、非特許文献2参照)。   The phase of the obtained diffraction measurement can be determined using a phase recovery algorithm such as the Hybrid Input Output method to obtain a real space structure (see, for example, Non-Patent Document 2).

しかしながら、このような位相回復アルゴリズムを用いる場合、繰り返しの計算により収束した位相は、正しい実空間の構造ではなく、局所解である可能性がある。そのため、実験的に位相を決定することが可能な方法として、透過X線ホログラフィ測定が行われている。   However, when such a phase recovery algorithm is used, there is a possibility that the phase converged by repeated calculation is not a correct real space structure but a local solution. Therefore, transmission X-ray holography measurement is performed as a method capable of experimentally determining the phase.

透過X線ホログラフィ測定とは、コヒーレントX線の波面を2つに分割し、試料を透過したX線(物体光)と、試料を透過しないX線(参照光)を遠方の検出面で重ね合わせ、その干渉縞をホログラムとして記録する方法である。このホログラムには位相情報も記録されているので、一義的に実空間の構造を決定することができる。   Transmission X-ray holography measurement divides the wavefront of coherent X-rays into two, and superimposes the X-ray (object light) that has passed through the sample and the X-ray (reference light) that does not pass through the sample on the far-off detection surface In this method, the interference fringes are recorded as a hologram. Since phase information is also recorded in this hologram, the structure of the real space can be uniquely determined.

この透過X線ホログラフィ法では、試料を透過したX線と、参照光X線との干渉を測定しているため、試料によるX線の吸収量の違いから、その試料形状を評価することが可能である(例えば、非特許文献3参照)。   In this transmission X-ray holography method, since the interference between the X-ray transmitted through the sample and the reference light X-ray is measured, the sample shape can be evaluated from the difference in the amount of X-ray absorption by the sample. (For example, see Non-Patent Document 3).

また、右回り円偏光と左回り円偏光によるX線吸収量の違いを利用することで、磁性膜の磁気ドメイン分布を評価した例も報告されている(例えば、非特許文献4参照)。この方法は、試料によるX線の吸収量の違いを測定しているため、この他にも膜面内の密度分布や元素分布なども評価可能である。   In addition, an example in which the magnetic domain distribution of a magnetic film is evaluated by utilizing the difference in the amount of X-ray absorption between clockwise circularly polarized light and counterclockwise circularly polarized light has been reported (see, for example, Non-Patent Document 4). In this method, since the difference in the amount of X-ray absorption by the sample is measured, the density distribution and element distribution in the film surface can also be evaluated.

I.K.Robinson,I.A.Vartanyants,G.J.Williams,M.A.Pfeifer,J.A.Pitney,Phys.Rev.Lett.,Vol.87,p.195505,2001I. K. Robinson, I.D. A. Vartanyants, G.M. J. et al. Williams, M.M. A. Pfeifer, J. et al. A. Pitney, Phys. Rev. Lett. , Vol. 87, p. 195505, 2001 J.R.Fienup,Appl.Opt.Vol.20,p.2758−2369,1982J. et al. R. Fienup, Appl. Opt. Vol. 20, p. 2758-2369, 1982 W.F.Schlotter,R.Rick,K.Chen,A.Scherz,J.Stohr,J.Luning,S.Eisebitt,Ch.Gunther,W.Eberhardt,O.Hellwig,I.McNulty,Appl.Phys.Lett.,Vol.89,p.163112 ,2006W. F. Schlotter, R.A. Rick, K.M. Chen, A.M. Scherz, J .; Stohr, J .; Luning, S.M. Eisebitt, Ch. Gunther, W.M. Eberhardt, O .; Hellwig, I .; McNulty, Appl. Phys. Lett. , Vol. 89, p. 163112, 2006 S.Eisebitt,J.Lunlng,W.F.Schlotter,M.Lorgen,O.Hellwig,W.Eberhardt,J.Stohr,Nature,Vol.432,p.885,2004S. Eisebitt, J.M. Lunng, W.L. F. Schlotter, M.M. Lorgen, O .; Hellwig, W.M. Eberhardt, J. et al. Stohr, Nature, Vol. 432, p. 885,2004

しかし、この従来技術では、X線の回折を利用していないため、X線を回折させることで初めて知ることが可能な、試料の膜面内の結晶性、結晶配向性、結晶の積層欠陥、歪などの分布に関する情報を取得することができないという問題がある。   However, since this conventional technique does not utilize X-ray diffraction, crystallinity in the film surface of the sample, crystal orientation, crystal stacking fault, which can be known only by diffracting X-rays, There is a problem that it is not possible to acquire information on a distribution such as distortion.

したがって、本発明は、回折X線ホログラフィ測定と透過X線ホログラフィ測定の両法の測定を可能にすることを目的とする。   Therefore, an object of the present invention is to enable measurement by both methods of diffraction X-ray holography measurement and transmission X-ray holography measurement.

本発明の一観点からは、基板の表面側に設けた測定部と前記測定部に隣接して参照用X線を透過する透過孔を少なくとも一つ有し、前記基板の裏面側に前記測定部及び前記透過孔以外の領域を覆うX線吸収膜を有する測定用試料の裏面からコヒーレントなX線を照射し、前記測定部からの放出X線と前記透過孔からの放出X線を前記表面側に位置する検出面で重ね合わせ、前記重ね合わせにより形成された干渉縞をホログラムとして分析するX線ホログラフィ測定方法であって、前記透過孔と前記検出面との間に前記照射X線を回折する結晶片を設け、前記結晶片を設けた状態の透過孔からの回折X線と前記測定部からの回折X線との重ね合わせによる干渉縞を取得する工程と、前記結晶片を設けない状態の透過孔からの透過X線と前記測定部からの透過X線との重ね合わせによる干渉縞を取得する工程とを有する特徴とするX線ホログラフィ測定方法が提供される。   From one aspect of the present invention, the measurement unit provided on the front side of the substrate and at least one transmission hole that transmits reference X-rays adjacent to the measurement unit are provided, and the measurement unit is provided on the back side of the substrate. And a coherent X-ray is irradiated from the back surface of the measurement sample having an X-ray absorption film covering the region other than the transmission hole, and the emission X-ray from the measurement unit and the emission X-ray from the transmission hole are irradiated on the surface side. An X-ray holography measurement method in which the interference fringes formed by the superposition are analyzed as a hologram, and the irradiated X-rays are diffracted between the transmission hole and the detection surface. Providing a crystal piece, obtaining an interference fringe by superimposing the diffracted X-ray from the transmission hole in the state in which the crystal piece is provided and the diffracted X-ray from the measurement unit; and a state in which the crystal piece is not provided. Transmitted X-rays from the transmission hole and the measurement X-ray holography measurement method characterized and a step of acquiring the interference fringes due to superposition of the transmitted X-rays from is provided.

また、本発明の別の観点からは、基板の表面側に設けた測定部と前記測定部に隣接して参照用X線を透過する透過孔を少なくとも一つ有し、前記基板の裏面側に前記測定部及び前記透過孔以外の領域を覆うX線吸収膜を有する測定用試料の裏面からコヒーレントなX線を照射し、前記測定部からの放出X線と前記透過孔からの放出X線を前記表面側に位置する検出面で重ね合わせ、前記重ね合わせにより形成された干渉縞をホログラムとして分析するX線ホログラフィ測定方法であって、前記透過孔の少なくとも一つと前記検出面との間に前記照射X線を回折する結晶片を設けるとともに、前記透過孔の内の他の透過孔には前記結晶片を設けず、前記結晶片を設けた透過孔からの回折X線と前記測定部からの回折X線との重ね合わせによる干渉縞と、前記結晶片を設けない他の透過孔からの透過X線と前記測定部からの透過X線との重ね合わせによる干渉縞とを同時に取得することを特徴とするX線ホログラフィ測定方法が提供される。   From another viewpoint of the present invention, the measurement unit provided on the surface side of the substrate and at least one transmission hole that transmits the reference X-ray adjacent to the measurement unit are provided on the back side of the substrate. The coherent X-ray is irradiated from the back surface of the measurement sample having an X-ray absorption film covering the region other than the measurement unit and the transmission hole, and the emission X-ray from the measurement unit and the emission X-ray from the transmission hole are irradiated. An X-ray holography measurement method that superimposes on a detection surface located on the front surface side and analyzes the interference fringes formed by the superposition as a hologram, wherein the method includes between at least one of the transmission holes and the detection surface. A crystal piece for diffracting irradiated X-rays is provided, and the other transmission hole among the transmission holes is not provided with the crystal piece, and the diffraction X-ray from the transmission hole provided with the crystal piece and the measurement unit Drying by overlapping with diffraction X-rays An X-ray holography measurement method characterized by simultaneously obtaining a fringe and an interference fringe by superimposing a transmission X-ray from another transmission hole not provided with the crystal piece and a transmission X-ray from the measurement unit Provided.

開示のX線ホログラフィ測定方法によれば、回折X線ホログラフィ測定と透過X線ホログラフィ測定の両法の測定が可能になる。それによって、試料の膜面内の形状や試料の膜面内の結晶性の分布などを一義的に決定することが可能になる。   According to the disclosed X-ray holography measurement method, both the diffraction X-ray holography measurement and the transmission X-ray holography measurement can be measured. As a result, it is possible to uniquely determine the shape of the sample within the film surface, the distribution of crystallinity within the film surface of the sample, and the like.

本発明の実施の形態のX線ホログラフィ測定方法の説明図である。It is explanatory drawing of the X-ray holography measuring method of embodiment of this invention. 本発明の実施例1のX線ホログラフィ測定方法に用いる測定用試料の作製工程の途中までの説明図である。It is explanatory drawing to the middle of the preparation process of the sample for a measurement used for the X-ray holography measuring method of Example 1 of this invention. 本発明の実施例1のX線ホログラフィ測定方法に用いる測定用試料の作製工程の図2以降の途中までの説明図である。It is explanatory drawing to the middle after FIG. 2 of the preparation process of the sample for a measurement used for the X-ray holography measuring method of Example 1 of this invention. 本発明の実施例1のX線ホログラフィ測定方法に用いる測定用試料の作製工程の図3以降の途中までの説明図である。It is explanatory drawing to the middle after FIG. 3 of the preparation process of the sample for a measurement used for the X-ray holography measuring method of Example 1 of this invention. 本発明の実施例1のX線ホログラフィ測定方法に用いる測定用試料の作製工程の図4以降の説明図である。It is explanatory drawing after FIG. 4 of the manufacturing process of the sample for a measurement used for the X-ray holography measuring method of Example 1 of this invention. 本発明の実施例2のX線ホログラフィ測定方法の説明図である。It is explanatory drawing of the X-ray holography measuring method of Example 2 of this invention. 本発明の実施例3のX線ホログラフィ測定方法の説明図である。It is explanatory drawing of the X-ray holography measuring method of Example 3 of this invention. 本発明の実施例4のX線ホログラフィ測定方法の説明図である。It is explanatory drawing of the X-ray holography measuring method of Example 4 of this invention.

ここで、図1を参照して、本発明の実施の形態のX線ホログラフィ測定方法を説明する。図1は本発明の実施の形態のX線ホログラフィ測定方法の概念的構成説明図である。図1に示すように、課題である回折X線ホログラフィ測定のための測定用試料10は、デバイスで使われるような微細加工された測定部13を含む薄膜12を設けた基板11の裏面側にX線吸収膜14を備えている。   Here, an X-ray holography measurement method according to an embodiment of the present invention will be described with reference to FIG. FIG. 1 is a conceptual configuration explanatory diagram of an X-ray holography measurement method according to an embodiment of the present invention. As shown in FIG. 1, a measurement sample 10 for diffraction X-ray holography measurement, which is a problem, is provided on the back side of a substrate 11 provided with a thin film 12 including a microfabricated measurement unit 13 used in a device. An X-ray absorption film 14 is provided.

このX線吸収膜14には測定箇所である測定部13をX線が透過可能なように開口部17が設けられるとともに、開口部17からX線の可干渉距離内に、基板11、薄膜12及びX線吸収膜14を貫通する少なくとも一つの貫通孔を設ける。なお、ここでは、2つの貫通孔15,16を設けた場合を図示している。   The X-ray absorption film 14 is provided with an opening 17 so that X-rays can pass through the measurement unit 13 as a measurement location, and the substrate 11 and the thin film 12 are within the X-ray coherence distance from the opening 17. And at least one through-hole penetrating the X-ray absorbing film 14 is provided. Here, a case where two through holes 15 and 16 are provided is illustrated.

貫通孔の内の少なくとも一つの貫通孔15の薄膜12側のX線の行路上に、回折X線ホログラフィ測定の参照光を発生するための結晶片18を設置する。この場合の結晶片18は薄膜12に直接接触するように配置しても良いし、或いは、結晶片18は図示しない補強・支持用ワッシャーから梁り出すように設置しても良く、必ずしも、薄膜12と直接接触している必要はない。   A crystal piece 18 for generating reference light for diffraction X-ray holography measurement is placed on the X-ray path on the thin film 12 side of at least one of the through holes 15. In this case, the crystal piece 18 may be arranged so as to be in direct contact with the thin film 12, or the crystal piece 18 may be installed so as to protrude from a reinforcing / supporting washer (not shown). There is no need to be in direct contact with 12.

この場合の結晶片18としては、結晶構造が簡明な単体であることが望ましく、特に、単結晶であることが望ましく、例えば、Si単結晶片や単結晶金属片を用いれば良い。なお、単体であれば多結晶金属片を用いても良い。   In this case, the crystal piece 18 is preferably a simple substance having a simple crystal structure, and particularly preferably a single crystal. For example, a Si single crystal piece or a single crystal metal piece may be used. If it is a simple substance, a polycrystalline metal piece may be used.

この結晶片18は、測定部13の格子定数と近似した格子定数、例えば、測定部13の格子定数の±5%の範囲の格子定数を有する結晶片を用いることが望ましい。その場合には、測定用試料10と結晶片18をなす角θがθ=0°の平行な状態に設置することで検出面24上で干渉縞を発生させることができる。特に、測定部13と同じ材料からなる結晶片18を用いることが望ましい。   As the crystal piece 18, it is desirable to use a crystal piece having a lattice constant approximate to the lattice constant of the measurement unit 13, for example, a lattice constant in a range of ± 5% of the lattice constant of the measurement unit 13. In that case, interference fringes can be generated on the detection surface 24 by placing the measurement sample 10 and the crystal piece 18 in a parallel state where the angle θ is θ = 0 °. In particular, it is desirable to use a crystal piece 18 made of the same material as the measurement unit 13.

また、測定部13の格子定数と異なった格子定数の結晶片18を選択した場合には、測定部13からの回折物質X線22のブラッグ角と、結晶片18からの回折参照X線23のブラッグ角が一致するように、測定用試料10と結晶片18のなす角θを決定すれば良い。   When a crystal piece 18 having a lattice constant different from the lattice constant of the measurement unit 13 is selected, the Bragg angle of the diffracted material X-ray 22 from the measurement unit 13 and the diffraction reference X-ray 23 from the crystal piece 18 are selected. What is necessary is just to determine angle (theta) which the sample 10 for a measurement and the crystal piece 18 make so that a Bragg angle may correspond.

この測定用試料10に対してX線吸収膜14側からコヒーレントX線19を照射すると、開口部17を通過したコヒーレントX線19は測定部13で吸収されるとともに、回折されて透過物質X線20と回折物質X線22とが発生する。一方、貫通孔16を通過したコヒーレントX線19はそのまま透過参照X線21となり、また、貫通孔15を通過したコヒーレントX線19は結晶片18により回折されて回折参照X線23となる。   When the measurement sample 10 is irradiated with coherent X-rays 19 from the X-ray absorption film 14 side, the coherent X-rays 19 that have passed through the opening 17 are absorbed by the measurement unit 13 and are diffracted and transmitted X-rays. 20 and diffracted material X-rays 22 are generated. On the other hand, the coherent X-ray 19 that has passed through the through-hole 16 becomes the transmission reference X-ray 21 as it is, and the coherent X-ray 19 that has passed through the through-hole 15 is diffracted by the crystal piece 18 to become the diffraction reference X-ray 23.

なお、コヒーレントX線19としては、コヒーレンス長が大きなX線が望ましく、例えば、自由電子レーザを用いると、コヒーレンス長は数100μm程度になる。   The coherent X-ray 19 is preferably an X-ray having a large coherence length. For example, when a free electron laser is used, the coherence length is about several hundreds of μm.

この透過物質X線20と透過参照X線21とが50cm〜5m程度離れた検出面24で干渉して干渉縞が形成され、この干渉縞を検出面24に配置した検出器25で検出することで透過X線ホログラフィ測定が行われる。   The transmission material X-ray 20 and the transmission reference X-ray 21 interfere with each other on the detection surface 24 separated by about 50 cm to 5 m to form an interference fringe, and the interference fringe is detected by the detector 25 disposed on the detection surface 24. A transmission X-ray holography measurement is performed.

一方、回折物質X線22と回折参照X線23も検出面24で干渉して干渉縞が形成され、この干渉縞を検出面24に配置した検出器26で検出することで従来測定できなかった回折X線ホログラフィ測定が同時に行われることになる。   On the other hand, the diffracted material X-ray 22 and the diffraction reference X-ray 23 also interfere with each other on the detection surface 24 to form interference fringes, which could not be measured conventionally by detecting the interference fringes with the detector 26 disposed on the detection surface 24. Diffraction X-ray holography measurement will be performed simultaneously.

このように、回折X線ホログラフィ測定によって、従来不可能であった、試料の膜面内の結晶性の分布などを一義的に決定することが可能となる。また、本試料を用いることで、従来技術である透過X線ホログラフィ測定も同時に行うことも可能となる。そのため、微細加工された基板上薄膜試料の結晶状態と磁気ドメインについて、同じ試料で評価し、両者の関係を調べることなども可能となる。   As described above, the diffraction X-ray holography measurement makes it possible to uniquely determine the crystallinity distribution in the film surface of the sample, which has been impossible in the past. In addition, by using this sample, it is possible to perform transmission X-ray holography measurement, which is a conventional technique, at the same time. Therefore, it is possible to evaluate the crystal state and magnetic domain of the thin film sample on the micro-processed substrate using the same sample and investigate the relationship between the two.

なお、参照X線用の貫通孔を一つだけ設けた場合には、まず、貫通孔を開放状態として透過X線ホログラフィ測定を行ったのち、貫通孔を覆うように結晶片を設置して回折X線ホログラフィを行えば良い。なお、順序は逆でも良い。   When only one reference X-ray through-hole is provided, first, after performing transmission X-ray holography measurement with the through-hole open, a crystal piece is placed so as to cover the through-hole and diffracted. X-ray holography may be performed. The order may be reversed.

以上を前提として、次に、図2乃至図5を参照して本発明の実施例1のX線ホログラフィ測定方法に用いる測定用試料の作製工程を説明する。まず、図2(a)に示すようにSiウェーハ31上に測定対象物33を含む薄膜32を形成する。ここでは、測定対象物は例えば、Pt下部電極/PZT膜/Pt上部電極からなる強誘電体キャパシタとし、この強誘電体キャパシタが層間絶縁膜に被覆された状態とする。   Based on the above, a measurement sample manufacturing process used in the X-ray holography measurement method according to the first embodiment of the present invention will be described with reference to FIGS. First, as shown in FIG. 2A, a thin film 32 including a measurement object 33 is formed on a Si wafer 31. Here, the measurement object is, for example, a ferroelectric capacitor including a Pt lower electrode / PZT film / Pt upper electrode, and the ferroelectric capacitor is covered with an interlayer insulating film.

なお、符号34は測定のために測定対象物33を含む領域を試料サイズに切り出すための切断線である。試料サイズは任意であるが、ハンドリングの容易性等の観点から例えば、3mm×3mm〜10mm×10mm程度とする。   Reference numeral 34 denotes a cutting line for cutting out a region including the measurement object 33 into a sample size for measurement. The sample size is arbitrary, but is set to, for example, about 3 mm × 3 mm to 10 mm × 10 mm from the viewpoint of ease of handling.

次いで、図2(b)に示すように、例えば、ダイサー(図示は省略)を用いてSiウェーハ31を切断線34に沿って切り出してSi基板35とする。或いは、ダイサーの代わりにディスクパンチを用いて打ち抜いても良い。   Next, as shown in FIG. 2B, for example, the Si wafer 31 is cut out along the cutting line 34 using a dicer (not shown) to form the Si substrate 35. Or you may punch using a disk punch instead of a dicer.

次いで、図3(c)に示すように、次の薄層化工程においてSi基板35を補強・支持するために薄膜32側に支持用のワッシャー36を接着剤により貼り付ける。   Next, as shown in FIG. 3C, a supporting washer 36 is attached to the thin film 32 side with an adhesive in order to reinforce and support the Si substrate 35 in the next thinning step.

次いで、図3(d)に示すように、Si基板35の裏面を研磨等により薄層化する。例えば、紙ヤスリ等で数100μm程度の厚さまで研磨したのち、グラインダー等で10〜50μm程度の厚さまで研磨し、最後はイオンミリング等で最適な試料厚まで加工する。
最適な試料厚は、測定するX線のエネルギーに依存するものである。
Next, as shown in FIG. 3D, the back surface of the Si substrate 35 is thinned by polishing or the like. For example, after polishing to a thickness of about several hundreds μm with a paper file or the like, it is polished to a thickness of about 10 to 50 μm with a grinder or the like, and finally processed to an optimum sample thickness by ion milling or the like.
The optimum sample thickness depends on the energy of the X-ray to be measured.

この試料厚は経験に基づいて満足できる測定精度が得られる膜厚とするものであり、ここでは、例えば、測定エネルギーでのX線透過強度が、入射X線強度の10%以上になる基板厚までSi基板35を薄くする。より高精度な測定が必要な場合は、さらに基板厚を薄くすれば良い。   This sample thickness is a film thickness that provides satisfactory measurement accuracy based on experience. Here, for example, the substrate thickness is such that the X-ray transmission intensity at the measurement energy is 10% or more of the incident X-ray intensity. The Si substrate 35 is thinned up to. If more accurate measurement is required, the substrate thickness may be further reduced.

次いで、図4(e)に示すように、薄層化したSi基板35の裏面にスパッタ法、真空蒸着法、或いは、めっき法を用いてX線吸収膜37を成膜する。この場合のX線吸収膜37の膜厚も経験に基づいて満足できる測定精度が得られる膜厚とするものであり、ここでは、例えば、測定X線エネルギーでのX線透過強度が入射X線強度の1%以下になる膜厚に成膜する。なお、より高精度な測定が必要な場合は、さらに膜厚を厚くすれば良い。   Next, as shown in FIG. 4E, an X-ray absorption film 37 is formed on the back surface of the thinned Si substrate 35 by using a sputtering method, a vacuum evaporation method, or a plating method. In this case, the film thickness of the X-ray absorption film 37 is also set to a film thickness that can provide satisfactory measurement accuracy based on experience. The film is formed to a thickness that is 1% or less of the strength. In addition, when more highly accurate measurement is required, the film thickness may be further increased.

ここで、Si基板35を薄層化したのち、再度、X線吸収膜37を成膜する理由を説明する。一般的に、小さくて深い穴を開けることは難しく、例えば、FIB(収束イオンビーム)法では、膜厚方向に垂直ではなく、1°程度の角度をもって削れるため、深くなると穴の径が小さくなっていき、最終的にはある深さで穴が開けられなくなる。   Here, the reason for forming the X-ray absorption film 37 again after thinning the Si substrate 35 will be described. In general, it is difficult to make a small and deep hole. For example, in the FIB (focused ion beam) method, it is not perpendicular to the film thickness direction but can be cut at an angle of about 1 °. Eventually, a hole cannot be drilled at a certain depth.

一方、膜によるX線の吸収は、X線のエネルギー、膜中の元素の種類、膜の密度、膜厚等に依存することが知られている。エネルギーの高いX線を使用して測定を行う場合には、X線吸収膜37の厚さを厚くすればよいが、その反面、小さな穴を開けることが困難になる。   On the other hand, it is known that the absorption of X-rays by a film depends on the energy of X-rays, the type of elements in the film, the density of the film, the film thickness, and the like. When measurement is performed using high-energy X-rays, the thickness of the X-ray absorption film 37 may be increased, but on the other hand, it is difficult to make a small hole.

そこで、薄い膜厚で、効率良くX線を吸収させるためには、下表に示したような原子番号が大きく、高密度の膜を選ぶと良く、イリジウム、白金、金などが最適である。

Figure 0005332843
Therefore, in order to efficiently absorb X-rays with a small film thickness, it is preferable to select a high-density film having a large atomic number as shown in the table below, and iridium, platinum, gold, etc. are optimal.
Figure 0005332843

なお、原子番号が14で、密度が2.3〔g/cm3 〕であるSi基板35はX線の吸収効率が悪い(700eVのX線に対して、1μm厚のX線透過率は3.78×10-1)。したがって、Si基板35を薄層化したのち、イリジウム、白金、金などの膜を成膜することで、測定用試料全体の膜厚が薄くなり、後述する参照X線用の小さな穴を開けることが容易になる。 The Si substrate 35 having an atomic number of 14 and a density of 2.3 [g / cm 3 ] has poor X-ray absorption efficiency (the X-ray transmittance of 1 μm thickness is 3 for 700 eV X-rays). .78 × 10 −1 ). Therefore, after thinning the Si substrate 35, a film of iridium, platinum, gold or the like is formed, so that the film thickness of the entire measurement sample is reduced, and a small hole for reference X-ray described later is opened. Becomes easier.

次いで、図4(f)に示すように、FIB法を用いてX線ホログラフィの参照光用の試料を貫通する貫通孔38,39を形成する。この場合、所望の測定対象物33を確認して、参照光用の貫通孔38,39を開ける場所を決定することが可能なように、薄膜面側から開孔する。   Next, as shown in FIG. 4F, through-holes 38 and 39 that penetrate the sample for reference light of X-ray holography are formed using the FIB method. In this case, the desired measurement object 33 is confirmed, and a hole is opened from the thin film surface side so that it is possible to determine a location where the reference light through holes 38 and 39 are opened.

この場合の参照光用の貫通孔38,39の大きさや、測定対象物33から貫通孔38,39までの距離は、入射X線のコヒーレンス長を考慮して決定される。ここでは、貫通孔38,39の大きさは0.05μm×0.05μm〜0.5μm×0.5μm程度とし、測定対象物33から貫通孔38,39までの距離は0.5μm〜50μm程度とするが、いずれにしても、入射X線のコヒーレンス長の範囲内とする。   In this case, the size of the reference light through holes 38 and 39 and the distance from the measurement object 33 to the through holes 38 and 39 are determined in consideration of the coherence length of the incident X-rays. Here, the size of the through holes 38 and 39 is about 0.05 μm × 0.05 μm to 0.5 μm × 0.5 μm, and the distance from the measurement object 33 to the through holes 38 and 39 is about 0.5 μm to 50 μm. In any case, it is within the range of the coherence length of incident X-rays.

次いで、図5(g)に示すように、FIB法を用いてSi基板35の測定対象物33に対応する領域が露出するようにX線吸収膜37を選択的に除去して開口部40を形成する。この時、貫通孔38,39は測定対象物33をX線吸収膜37側から特定するために利用される。   Next, as shown in FIG. 5G, the X-ray absorption film 37 is selectively removed using the FIB method so that the region corresponding to the measurement object 33 of the Si substrate 35 is exposed, and the opening 40 is formed. Form. At this time, the through holes 38 and 39 are used for specifying the measurement object 33 from the X-ray absorption film 37 side.

この場合の開口部40の大きさは、例えば、1μm×1μm〜2μm×2μmであり、また、深さは、X線吸収膜37が完全に除去されていれば良い。なお、原理的には、Si基板35を完全に除去することが望ましいが、現実的には測定対象物33が除去工程においてFIBによるダメージを受けるので余り深くすることは望ましくない。   In this case, the size of the opening 40 is, for example, 1 μm × 1 μm to 2 μm × 2 μm, and the depth is sufficient if the X-ray absorption film 37 is completely removed. In principle, it is desirable to completely remove the Si substrate 35. However, in reality, it is not desirable to make the measurement object 33 too deep because the measurement object 33 is damaged by the FIB in the removal process.

最後に、図5(h)に示すように、一方の貫通孔38を覆うように、回折X線ホログラフィ測定の参照光を発生するための結晶片41を、測定用試料と結晶片41のなす角θがθ=0°となるように設置する。なお、ここでは、結晶片41の設置には、FIBとSEM(走査型電子顕微)の両方の機能を備えたデュアルビーム装置を用いる。   Finally, as shown in FIG. 5 (h), a crystal piece 41 for generating reference light for diffraction X-ray holography measurement is formed between the measurement sample and the crystal piece 41 so as to cover one through-hole 38. The angle θ is set so that θ = 0 °. Here, a dual beam apparatus having both functions of FIB and SEM (scanning electron microscope) is used to install the crystal piece 41.

まず、予め用意された結晶からFIBを用いて結晶片41を切り出す。結晶片41の大きさは、貫通孔38より大きな面を持ち、且つ、設置しても物体光用の開口部40を投影的に遮らない大きさとし、例えば、1辺が1μm程度の立方体とする。ここでは、強誘電体キャパシタを測定対象としているので、例えば、結晶片41としては単体のPt片を用いる。Pt片は単結晶であることが望ましいが、通常は多結晶である。   First, a crystal piece 41 is cut out from a prepared crystal using FIB. The size of the crystal piece 41 is set to a size having a surface larger than the through-hole 38 and does not projectably block the object light opening 40 even if the crystal piece 41 is installed, for example, a cube having one side of about 1 μm. . Here, since the ferroelectric capacitor is a measurement object, for example, a single Pt piece is used as the crystal piece 41. The Pt piece is preferably a single crystal, but is usually polycrystalline.

この切り出した結晶片41を、デュアルビーム装置にあるマイクロサンプリング用の針に接着する。SEM像を確認しながら、切り出した結晶片41を貫通孔38の上に持ってくる。この場合、測定用試料と結晶片41のなす角θは、SEM像を確認することでおよそ0.1°の精度で好みの角度にすることが可能である。   The cut crystal piece 41 is bonded to a microsampling needle in the dual beam apparatus. While checking the SEM image, the cut crystal piece 41 is brought on the through hole 38. In this case, the angle θ formed between the measurement sample and the crystal piece 41 can be set to a desired angle with an accuracy of about 0.1 ° by checking the SEM image.

また、測定用試料と結晶片の接着には、FIB装置のデポ機能を利用し、例えば、X線をほとんど吸収しないカーボン膜42のデポにより両者を固定する。測定用試料と結晶片41の固定後に、マイクロサンプリング用の針と結晶片41をFIBにより切り離す。なお、結晶片41が厚すぎる場合には、この後にFIBで加工し、薄くすることも可能である。   In addition, for adhesion between the measurement sample and the crystal piece, the deposition function of the FIB apparatus is used, for example, both are fixed by the deposition of the carbon film 42 that hardly absorbs X-rays. After fixing the measurement sample and the crystal piece 41, the microsampling needle and the crystal piece 41 are separated by FIB. If the crystal piece 41 is too thick, it can be thinned by processing with FIB after this.

以上のように、試料加工を順次行うことで、実デバイスの所望の測定対象物33に対して、上記の図1に示したように回折X線ホログラフィ測定と透過X線ホログラフィ測定とを同時に行うことが可能な測定用試料が得られる。   As described above, by performing the sample processing sequentially, the diffraction X-ray holography measurement and the transmission X-ray holography measurement are simultaneously performed on the desired measurement object 33 of the actual device as shown in FIG. A measurement sample that can be obtained is obtained.

次に、図6を参照して本発明の実施例2のX線ホログラフィ測定方法を説明する。図6は本発明の実施例2のX線ホログラフィ測定方法に用いる測定用試料の概念的断面図である。実施例1で説明したように、測定対象物と同じ材料の結晶片41或いは同じ格子定数の結晶片を選択した場合には、回折X線のブラッグ角が同じになるので、θ=0°で良い。   Next, an X-ray holography measurement method according to Embodiment 2 of the present invention will be described with reference to FIG. FIG. 6 is a conceptual cross-sectional view of a measurement sample used in the X-ray holography measurement method of Example 2 of the present invention. As described in the first embodiment, when the crystal piece 41 of the same material as the object to be measured or the crystal piece of the same lattice constant is selected, the Bragg angles of the diffracted X-rays are the same, so θ = 0 ° good.

しかし、測定対象物33と異なった格子定数の結晶片41、例えば、Si単結晶片を選択した場合には、結晶片41を測定用試料に対して傾斜させる必要がある。測定用試料と検出器との距離が50cm〜5m程度であり、貫通孔38と開口部40との距離に比べて十分遠いことを考慮すると、測定用試料からの回折物質X線のブラッグ角と、結晶片41からの回折参照光X線のブラッグ角が一致するようになす角θを決定する。   However, when a crystal piece 41 having a lattice constant different from that of the measurement object 33, for example, a Si single crystal piece is selected, the crystal piece 41 needs to be inclined with respect to the measurement sample. Considering that the distance between the measurement sample and the detector is about 50 cm to 5 m and is sufficiently far compared with the distance between the through hole 38 and the opening 40, the Bragg angle of the diffracted material X-ray from the measurement sample is Then, the angle θ formed so that the Bragg angles of the diffraction reference light X-rays from the crystal piece 41 coincide with each other is determined.

ここでは結晶片41を、デュアルビーム装置にあるマイクロサンプリング用の針に接着し、SEM像を確認しながら、結晶片41を貫通孔38の上に持ってくる。次いで、測定用試料と結晶片41のなす角θが予め決定した角度になるようにSEM像を確認しながら設置する。   Here, the crystal piece 41 is adhered to a microsampling needle in the dual beam apparatus, and the crystal piece 41 is brought on the through hole 38 while confirming the SEM image. Next, the sample is placed while confirming the SEM image so that the angle θ between the measurement sample and the crystal piece 41 becomes a predetermined angle.

次いで、FIB装置のデポ機能を利用し、例えば、X線をほとんど吸収しないカーボン膜42を蒸着することによって両者を固定すれば良い。測定用試料と結晶片41の固定後に、マイクロサンプリング用の針と、結晶片41をFIBにより切り離すことによって、図6に示した測定用試料が得られる。   Next, using the deposition function of the FIB apparatus, for example, a carbon film 42 that hardly absorbs X-rays may be deposited to fix the both. After the measurement sample and the crystal piece 41 are fixed, the measurement sample shown in FIG. 6 is obtained by separating the microsampling needle and the crystal piece 41 by FIB.

次に、図7を参照して本発明の実施例3のX線ホログラフィ測定方法を説明する。図7は本発明の実施例3のX線ホログラフィ測定方法に用いる測定用試料の概念的断面図である。この実施例3においては、所望の測定対象物33が薄膜32の表面近傍にあり、その後の試料作製工程でダメージを受ける可能性がある。   Next, an X-ray holography measurement method according to Example 3 of the present invention will be described with reference to FIG. FIG. 7 is a conceptual cross-sectional view of a measurement sample used in the X-ray holography measurement method of Example 3 of the present invention. In Example 3, the desired measurement object 33 is in the vicinity of the surface of the thin film 32 and may be damaged in the subsequent sample preparation process.

そこで、Siウェーハ31から切り出す前に、薄膜32上に可視光領域で透明な保護膜43を設ける。ここでは、例えば、メチレン・エタン/Arガスを用いたプラズマ重合膜を保護膜43として設ける。このような炭素系のプラズマ重合膜はX線を殆ど吸収しないので測定に影響を与えることがない。   Therefore, before cutting out from the Si wafer 31, a transparent protective film 43 is provided on the thin film 32 in the visible light region. Here, for example, a plasma polymerization film using methylene ethane / Ar gas is provided as the protective film 43. Since such a carbon-based plasma polymerized film hardly absorbs X-rays, it does not affect the measurement.

以降は、上述の実施例1と同様に各工程を順次行うことによって、図7に示した測定用試料が得られる。なお、この保護膜43に、所望の測定対象物33の位置の特定が可能なように、マーキングをレーザにより施しておいても良い。   Thereafter, the measurement sample shown in FIG. 7 is obtained by sequentially performing each step in the same manner as in Example 1 described above. The protective film 43 may be marked with a laser so that the position of the desired measurement object 33 can be specified.

次に、図8を参照して本発明の実施例4のX線ホログラフィ測定方法を説明する。この本発明の実施例4は参照光用の貫通孔を一つだけ設けたものであり、基本的な製造工程は上記の実施例1と同様である。   Next, an X-ray holography measurement method according to Example 4 of the present invention will be described with reference to FIG. In the fourth embodiment of the present invention, only one through hole for reference light is provided, and the basic manufacturing process is the same as in the first embodiment.

まず、図8(a)に示すように、貫通孔38を結晶片で覆わない状態でコヒーレントX線44を照射して透過X線ホログラムを取得する。コヒーレントX線44を照射すると開口部40を介して測定対象物33を透過した透過物質X線45と、貫通孔38を通過した透過参照X線46とが干渉し、50cm〜5m離れた検出面47において干渉縞として検出器(図示は省略)で検出する。   First, as shown in FIG. 8A, a transmission X-ray hologram is obtained by irradiating coherent X-rays 44 without covering the through-holes 38 with crystal pieces. When the coherent X-ray 44 is irradiated, the transmission material X-ray 45 that has passed through the measurement object 33 through the opening 40 interferes with the transmission reference X-ray 46 that has passed through the through hole 38, and a detection surface separated by 50 cm to 5 m. In 47, an interference fringe is detected by a detector (not shown).

次いで、図8(b)に示すように、貫通孔38を結晶片41で覆った状態でコヒーレントX線44を照射して回折X線ホログラムを取得する。コヒーレントX線44を照射すると開口部40を介して測定対象物33から回折された回折物質X線48と、貫通孔38を通過して結晶片41で回折された回折参照X線49とが干渉し、検出面47において干渉縞として検出器(図示は省略)で検出する。   Next, as shown in FIG. 8B, a diffracted X-ray hologram is obtained by irradiating the coherent X-ray 44 with the through-hole 38 covered with the crystal piece 41. When the coherent X-ray 44 is irradiated, the diffracted material X-ray 48 diffracted from the measurement object 33 through the opening 40 and the diffraction reference X-ray 49 diffracted by the crystal piece 41 through the through hole 38 interfere with each other. Then, the detection surface 47 detects the interference fringes with a detector (not shown).

透過X線ホログラムからは、X線の吸収量の違いから測定対象物33の形状に関する情報が得られ、一方、回折X線ホログラムからは、測定対象物33の結晶性、結晶配向性、積層欠陥、或いは、歪の分布等の結晶性に関する情報が得られる。   From the transmission X-ray hologram, information on the shape of the measurement object 33 is obtained from the difference in the amount of X-ray absorption. On the other hand, from the diffraction X-ray hologram, the crystallinity, crystal orientation, and stacking fault of the measurement object 33 are obtained. Alternatively, information on crystallinity such as strain distribution can be obtained.

これらの各情報は、同じ位置の測定対象物33についての情報であることが担保されているので、透過X線ホログラフィ測定と回折X線ホログラフィ測定を同時に行わなくても精度の高い解析を行うことが可能となる。なお、透過X線ホログラフィ測定と回折X線ホログラフィ測定の順序は逆でも良い。   Since each of these pieces of information is guaranteed to be information about the measurement object 33 at the same position, high-precision analysis can be performed without performing transmission X-ray holography measurement and diffraction X-ray holography measurement at the same time. Is possible. The order of transmission X-ray holography measurement and diffraction X-ray holography measurement may be reversed.

10 測定用試料
11 基板
12 薄膜
13 測定部
14,37 X線吸収膜
15,16,38,39 貫通孔
17,40 開口部
18,41 結晶片
19,44 コヒーレントX線
20,45 透過物質X線
21,46 透過参照X線
22,48 回折物質X線
23,49 回折参照X線
24,47 検出面
25 検出器
26 検出器
31 Siウェーハ
32 薄膜
33 測定対象物
34 切断線
35 Si基板
36 ワッシャー
42 カーボン膜
43 保護膜
DESCRIPTION OF SYMBOLS 10 Sample for measurement 11 Substrate 12 Thin film 13 Measuring part 14, 37 X-ray absorption film 15, 16, 38, 39 Through-hole 17, 40 Opening part 18, 41 Crystal piece 19, 44 Coherent X-ray 20, 45 Transmitted substance X-ray 21 and 46 Transmission reference X-rays 22 and 48 Diffraction material X-rays 23 and 49 Diffraction reference X-rays 24 and 47 Detection surface 25 Detector 26 Detector 31 Si wafer 32 Thin film 33 Measurement object 34 Cutting line 35 Si substrate 36 Washer 42 Carbon film 43 Protective film

Claims (5)

基板の表面側に設けた測定部と前記測定部に隣接して参照用X線を透過する透過孔を少なくとも一つ有し、前記基板の裏面側に前記測定部及び前記透過孔以外の領域を覆うX線吸収膜を有する測定用試料の裏面からコヒーレントなX線を照射し、
前記測定部からの放出X線と前記透過孔からの放出X線を前記表面側に位置する検出面で重ね合わせ、
前記重ね合わせにより形成された干渉縞をホログラムとして分析するX線ホログラフィ測定方法であって、
前記透過孔と前記検出面との間に前記照射X線を回折する結晶片を設け、前記結晶片を設けた状態の透過孔からの回折X線と前記測定部からの回折X線との重ね合わせによる干渉縞を取得する工程と、
前記結晶片を設けない状態の透過孔からの透過X線と前記測定部からの透過X線との重ね合わせによる干渉縞を取得する工程とを有する特徴とするX線ホログラフィ測定方法。
A measurement unit provided on the front side of the substrate and at least one transmission hole that transmits reference X-rays adjacent to the measurement unit, and a region other than the measurement unit and the transmission hole is provided on the back side of the substrate. Irradiate coherent X-rays from the back side of the measurement sample having an X-ray absorption film to cover,
The emission X-ray from the measurement unit and the emission X-ray from the transmission hole are superimposed on the detection surface located on the surface side,
An X-ray holography measurement method for analyzing interference fringes formed by the superposition as a hologram,
A crystal piece for diffracting the irradiated X-ray is provided between the transmission hole and the detection surface, and the diffracted X-ray from the transmission hole in a state where the crystal piece is provided and the diffraction X-ray from the measurement unit are overlapped. Obtaining interference fringes by matching; and
An X-ray holography measurement method comprising: obtaining interference fringes by superimposing transmission X-rays from a transmission hole in a state where no crystal piece is provided and transmission X-rays from the measurement unit.
基板の表面側に設けた測定部と前記測定部に隣接して参照用X線を透過する透過孔を少なくとも一つ有し、前記基板の裏面側に前記測定部及び前記透過孔以外の領域を覆うX線吸収膜を有する測定用試料の裏面からコヒーレントなX線を照射し、
前記測定部からの放出X線と前記透過孔からの放出X線を前記表面側に位置する検出面で重ね合わせ、
前記重ね合わせにより形成された干渉縞をホログラムとして分析するX線ホログラフィ測定方法であって、
前記透過孔の少なくとも一つと前記検出面との間に前記照射X線を回折する結晶片を設けるとともに、前記透過孔の内の他の透過孔には前記結晶片を設けず、前記結晶片を設けた透過孔からの回折X線と前記測定部からの回折X線との重ね合わせによる干渉縞と、前記結晶片を設けない他の透過孔からの透過X線と前記測定部からの透過X線との重ね合わせによる干渉縞とを同時に取得することを特徴とするX線ホログラフィ測定方法。
A measurement unit provided on the front side of the substrate and at least one transmission hole that transmits reference X-rays adjacent to the measurement unit, and a region other than the measurement unit and the transmission hole is provided on the back side of the substrate. Irradiate coherent X-rays from the back side of the measurement sample having an X-ray absorption film to cover,
The emission X-ray from the measurement unit and the emission X-ray from the transmission hole are superimposed on the detection surface located on the surface side,
An X-ray holography measurement method for analyzing interference fringes formed by the superposition as a hologram,
A crystal piece for diffracting the irradiated X-ray is provided between at least one of the transmission holes and the detection surface, and the crystal piece is not provided in the other transmission holes of the transmission hole. Interference fringes due to superposition of the diffracted X-rays from the provided transmission holes and the diffracted X-rays from the measurement unit, the transmission X-rays from other transmission holes not provided with the crystal pieces, and the transmission X from the measurement unit An X-ray holography measurement method characterized by simultaneously obtaining interference fringes by superimposing with a line.
前記測定部と前記透過孔との間の距離は前記照射するコヒーレントなX線の可干渉距離内であることを特徴とする請求項1または2に記載のX線ホログラフィ測定方法。   The X-ray holography measurement method according to claim 1, wherein a distance between the measurement unit and the transmission hole is within a coherent distance of the irradiated coherent X-ray. 前記結晶片はカーボン膜を介して前記測定用試料の表面に接着されることを特徴とする請求項1乃至請求項3のいずれか1項に記載のX線ホログラフィ測定方法。   The X-ray holography measurement method according to any one of claims 1 to 3, wherein the crystal piece is bonded to a surface of the measurement sample via a carbon film. 前記測定部におけるブラッグ角と、前記結晶片におけるブラッグ角が一致するように、前記結晶片の回折面を調整することを特徴とする請求項1乃至請求項4のいずれか1項に記載のX線ホログラフィ測定方法。   5. The X according to claim 1, wherein a diffraction plane of the crystal piece is adjusted so that a Bragg angle in the measurement unit and a Bragg angle in the crystal piece coincide with each other. X-ray holography measurement method.
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