JP5349038B2 - Dielectric structure, electric discharge device, fluid reforming device, and reaction system using dielectric structure - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a dielectric structure which can reduce a pressure loss of a fluid to be treated and remove particulate impurities in the fluid to be treated with high efficiency. <P>SOLUTION: The dielectric structure U1 includes a dielectric 2 having at least one through hole 3 between a first surface S1 and a second surface S2, a first electric conductor 4 provided between the first surface S1 and the second surface S2 in the dielectric and located at least partially along the inner peripheral surface of the through hole 3, and a second electric conductor 6 provided between the first electric conductor 4 and the second surface S2, or on the second surface S2 in the dielectric 2 and located partially along the through hole. In the through hole 3, the opening area of an opening in the first surface S1 is larger than that of an opening in the second surface S2. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a dielectric structure used as, for example, a plasma generator, a discharge device using the dielectric structure, a fluid reforming apparatus, and a reaction system.

  Plasma is used in various fields of reaction systems and light source systems. For example, in the reaction system, nitrogen oxide (NOx) decomposer, hydrocarbon (HC) decomposer, dioxin decomposer, saturated fluorocarbon and compound (PFC) decomposer, volatile organic compound (VOC), soot, etc. Plasma is used in particulate impurity (PM) removal devices, deodorization devices, virus sterilization devices, ozone generators, or negative ion generators. In the light source system, for example, plasma is used in a plasma lamp (fluorescent lamp, neon tube, etc.), a light source for an etching apparatus, a light source for a resist exposure apparatus, or a plasma display.

There are various forms of plasma generators that generate this plasma. In recent years, plasma generators are connected to a filter made of metal or ceramics, and the plasma generated in the plasma generator by the flow rate of the fluid supplied is reduced. Some fluids flow into the filter and flow through the connected plasma generator and the filter to react with the plasma (hereinafter referred to as a plasma generator and filter connection system) (see, for example, Patent Document 1).
JP 2001-87658 A

  However, in the plasma generator and filter connection method, depending on the shape of the connecting surface between the plasma generator and the filter, the plasma generated in the plasma generator does not flow uniformly in the filter, and the plasma distribution varies. As a result, there is a problem that the reaction of the fluid varies and the reaction efficiency is deteriorated.

  An object of the present invention is to provide a dielectric structure capable of reacting a fluid as uniformly as possible when used in a plasma generator and a filter coupling method, a discharge device using the dielectric structure, a fluid reformer, and It is to provide a reaction system.

The dielectric structure of the present invention is provided between the first surface and the second surface of the dielectric having at least one through hole between the first surface and the second surface, and the dielectric. , At least a portion of the first conductor located along the inner peripheral surface of the through hole, and on the first surface of the dielectric, between the first surface and the second surface, or the second A second conductor provided on the surface and at least part of which is located along the through hole, the through hole being capable of generating plasma therein, and having an opening in the first surface. opening area, with has a larger opening than the opening area of the opening in the second surface, the second der from the surface that the fluid flows through the first surface is, the first conductor and The second conductor has a through hole at a position corresponding to the through hole. Is a flat plate-like conductor having, in cross section in the direction of the through-holes with a dielectric, the corner formed between the side surface and the main surface of the first conductor through holes provided in the first conductor is perpendicular der Ri, Ru is used as the plasma generator. This dielectric structure is referred to as a first dielectric structure.

Preferably, the first dielectric structure described above, the when projected in the penetrating direction of the through hole dielectric has, any two locations in said through-hole in which the dielectric spaced along the penetrating direction has The position of the inner peripheral surface near the second surface is the same as or more inside than the position of the inner peripheral surface near the first surface. This dielectric structure is referred to as a second dielectric structure.

Preferably, a plurality of dielectrics having at least one through hole between the first surface and the second surface, and each of the dielectrics are provided between the first surface and the second surface. , At least a portion of the first conductor located along the inner peripheral surface of the through hole, and on the first surface of each dielectric, between the first surface and the second surface, or A second conductor provided on the second surface and at least a part of the second conductor is located along the through hole; and the plurality of dielectrics include the first conductor and the second conductor. The through holes that are alternately disposed and are provided in the dielectrics and in which plasma is generated are arranged to communicate with each other, and one of the dielectrics is arranged in the arrangement direction of the plurality of dielectrics. The penetration in the first surface located at the end; The opening area of the holes, as well as have size than the opening area of the through hole in the second surface located at the other end of each of the dielectric in the arrangement direction, from said second surface of said each dielectric The fluid is flowed to the first surface side, and the first conductor and the second conductor are flat conductors each having a through hole at a position corresponding to the through hole, and the dielectric has a through hole. in the through direction of the cross section of the hole, the corner formed between the side surface and the main surface of the first conductor of the through hole having the first conductor is Ri perpendicular der, Ru is used as the plasma generator. This dielectric structure is referred to as a fifth dielectric structure.

  Preferably, in the fifth dielectric structure, two arbitrary positions in the continuous through-holes spaced along the through-direction when projected in the through-direction of the continuous through-holes formed of the plurality of communicating through-holes. Among these, the position of the inner peripheral surface of the portion close to the second surface located at one end in the arrangement direction is the inner periphery of the portion close to the first surface located at the other end in the arrangement direction. It is the same as the position of the surface or inside. This dielectric structure is referred to as a sixth dielectric structure.

  Preferably, in any one of the first to sixth dielectric structures, the first conductor and the second conductor each have a flat plate shape having a through hole at a position corresponding to the through hole. It is a conductor. This dielectric structure is referred to as a seventh dielectric structure.

  Preferably, in any one of the first to seventh dielectric structures, an outer edge portion of the second conductor is an outer edge of the first conductor when projected in the penetration direction of the through hole. Located inside the section. This dielectric structure is referred to as an eighth dielectric structure.

Preferably, in any one of the first to eighth dielectric structures, the second conductor has a through hole in addition to a position corresponding to the through hole. This dielectric structure is referred to as a ninth dielectric structure. The discharge device according to the present invention has an alternating current between any one of the first to ninth dielectric structures and the first conductor and the second conductor. And a first power source for applying a voltage or a pulse voltage. This discharge device is referred to as a first discharge device.

  Preferably, the first discharge device includes a second power source for applying a DC voltage between the first conductor and the second conductor. This discharge device is referred to as a second discharge device.

  The fluid reforming apparatus of the present invention includes any one of the first to fourth discharge devices, a fluid supply unit for flowing a fluid from the second conductor side to the first conductor side in the through hole, and the discharge device. It is a fluid reforming device provided with a dust collection part provided downstream.

  The reaction system of the present invention includes a discharge device according to any one of the first and third discharge devices, a fluid supply unit for flowing a fluid from the first conductor side to the second conductor side in the through hole, and the dielectric An electrode provided on the opposite side of the fluid supply unit with respect to the structure, a third power source for supplying a DC potential between the electrode and the first conductor, and between the dielectric structure and the electrode It is the reaction system provided with the dust collection part provided in.

  Further, the reaction system of the present invention includes the second discharge device, a fluid supply section for flowing a fluid from the first conductor side to the second conductor side in the through hole, and the fluid supply with respect to the dielectric structure. An electrode provided on the opposite side of the electrode part, a dust collecting part provided between the dielectric structure and the electrode, the second power source, the first conductor and the second conductor And a switching unit that switches between the electrode and the first conductor.

  According to the dielectric structure of the present invention, the pressure loss of the processing fluid can be reduced, and particulate impurities in the processing fluid can be removed with high efficiency.

  According to the discharge device of the present invention, the pressure loss of the processing fluid can be reduced, and the particulate impurities in the processing fluid can be removed with high efficiency.

  According to the fluid reforming apparatus of the present invention, the pressure loss of the processing fluid can be reduced, and the particulate impurities in the processing fluid can be removed with high efficiency.

  According to the reaction system of the present invention, the pressure loss of the processing fluid can be reduced, and the particulate impurities in the processing fluid can be removed with high efficiency.

  Hereinafter, embodiments of a dielectric structure according to the present invention will be described in detail with reference to the accompanying drawings.

(First embodiment)
FIG. 1 is a front view of a dielectric structure according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line AA ′ in FIG. The dielectric structure U1 according to the present embodiment includes a base 2 made of a dielectric. The base body 2 has a through hole 3 penetrating between the first surface S1 and the second surface S2 facing each other. Inside the base 2, the first conductor 4 is disposed between the first surface S <b> 1 and the second surface S <b> 2 that face each other. The first conductor 4 has a through hole 5 at a position corresponding to the through hole 3 of the base 2. The diameter of the through hole 5 is larger than the diameter of the through hole 3 of the base 2, and the opening of the through hole 5 is located along the opening of the through hole 3.

  In addition, a second conductor 6 is provided on the second surface S2 of the base 2 so as to face the first conductor 4, and an outer edge portion is located on the second surface S2. The second conductor 6 also has a through hole 7 at a position corresponding to the through hole 3 of the base 2. The diameter of the through hole 7 is the same as or larger than the diameter of the through hole 3 of the base 2, and the opening of the through hole 7 is located along the opening of the through hole 3.

  Further, the through hole 3 has an opening area of the opening on the first surface S1 larger than an opening area of the opening on the second surface S2.

  Moreover, when the dielectric structure U1 is projected in the penetration direction of the through-hole 3, the position of the inner peripheral surface at a location close to the second surface S2 among any two locations of the through-hole 3 separated along the penetration direction is The first surface S1 is formed so as to exist inside the position of the inner peripheral surface near the first surface S1. That is, the opening area of the through hole 3 when the substrate 2 is cut along a plane perpendicular to the through direction of the through hole 3 increases from the second surface S2 to the first surface S1.

  Further, external terminals electrically connected to the first conductor 4 to supply power to the first conductor 4 are provided on the end surfaces S3 and S4 perpendicular to the first surface S1 and the second surface S2 of the base 2. 8 and an external terminal 9 electrically connected to the second conductor 6 for supplying electric power to the second conductor 6 are provided.

  In the dielectric structure U1 according to the present embodiment, a reference potential is supplied to the first conductor 4 and an AC voltage or a pulse voltage is applied between the first conductor 4 and the second conductor 6. , Creeping discharge (along the region in the through hole 3 corresponding to the region between the first conductor 4 and the second conductor 6 and the edge of the second conductor 6, that is, the opening of the through hole 7 ( Plasma) can be generated. As shown in FIG. 3, when creeping discharge occurs in a region in the through hole 3 corresponding to a region between the first conductor 4 and the second conductor 6, this region is referred to as a discharge region 11. .

The base 2 is made of an electrically insulating material, for example, ceramic. Specifically, when the substrate 2 is manufactured, a ceramic green sheet is prepared, and then the prepared ceramic green sheet is appropriately punched, and a plurality of sheets are laminated as necessary, so that a high temperature (about 1300 to 1800) is obtained. Manufactured by baking at a temperature of ° C. An example of the electrical insulating material is an aluminum oxide sintered body (alumina ceramic). For example, a green sheet made of an aluminum oxide sintered body is prepared by adding an appropriate organic solvent and solvent to raw material powders such as alumina (Al ₂ O ₃ ), silica (SiO ₂ ), calcia (CaO), and magnesia (MgO). It is obtained by mixing into a mud and adopting a conventionally known doctor blade method or calender roll method or the like and molding it into a sheet.

  When producing a laminate of ceramic green sheets, the ceramic green sheets are laminated and then subjected to pressure bonding. The pressure bonding is performed by applying a pressure of about 3.0 to 8.0 MPa, and heating is performed at 35 to 100 ° C. as necessary. At this time, in order to form the through hole 3, the green sheet is punched using a mold or a laser. Moreover, in order to obtain sufficient adhesiveness between the ceramic green sheets, an adhesive prepared by mixing a solvent and a resin binder may be used. In addition to the aluminum oxide sintered body, examples of the electrical insulating material include a mullite sintered body, an aluminum nitride sintered body, a cordierite sintered body, and a silicon carbide sintered body.

  Further, in order to form the opening area of the through hole opening on the first surface S1 larger than the opening area of the opening on the second surface S2, a plurality of ceramics are formed by a die punching method, a laser punching method, a cutting method, or the like. It is preferable that through holes having different diameters from large to small are formed in advance in the green sheet, and a plurality of ceramic green sheets are stacked in order of the diameter of the formed through holes from large to small, and pressed with a press or the like. If it does in this way, the through-hole 3 from which the diameter of a through-hole becomes large toward the 1st surface S1 from 2nd surface S2 can be obtained.

  As another method, by cutting a desired position of the laminated body in which a plurality of ceramic green sheets are laminated from the first surface S1 side with a taper drill or the like, the diameter is increased from the second surface S2 toward the first surface S1. The through-hole 3 which becomes large can be obtained.

Furthermore, as another method, the desired position of the ceramic green sheet laminate is pressed from the first surface S1 side while being heated from about 40 ° C. to about 100 ° C. with a conical or convex mold or the like. can diameter from 2 surface S 2 toward the first surface S 1 is obtained a through hole 3 larger.

  In the dielectric structure U1 according to the present embodiment, the first conductor 4 is held in the base 2, and the first conductor 4 is provided with a through hole 5 at a position corresponding to the through hole 3. ing. The second conductor 6 is held on the second surface S <b> 2 of the base 2, and the second conductor 6 is provided with a through hole 7 at a position corresponding to the through hole 3. Therefore, by supplying a reference potential to the first conductor 4 and applying an AC voltage between the first conductor 4 and the second conductor 6, the discharge region 11 of the through hole 3 and the second conductor Creeping discharge (plasma) can be generated in a region along the opening of the six through holes 7 (hereinafter also referred to as “opening region”). Thereby, the fluid supplied to the through hole 3 from the second surface S2 side can be reacted with the plasma in the opening region of the through hole 7 of the second conductor 6 and the discharge region 11. Thereby, the particulate impurities in the fluid and the plasma can be reacted.

  The first conductor 5, the first conductor 4, and the second conductor 6 are each led out to the vicinity of the outer surface of the base 2, and directly to the corresponding external terminals 8 and 9, Alternatively, they are electrically connected via an auxiliary conductor.

  The first conductor 4 and the second conductor 6 are made of a metal powder conductor such as tungsten, molybdenum, platinum, copper, or silver. The first conductor 4 and the second conductor 6 are printed and applied in a desired shape on a predetermined position of the ceramic green sheet for the substrate 2 using printing means such as a screen printing method. By co-firing with the ceramic green sheet for use, a predetermined pattern can be formed inside the substrate 2. The conductive paste is mixed and kneaded by kneading means such as a ball mill, a three-roll mill, or a planetary mixer, with an organic binder and an organic solvent, and if necessary, a dispersant added to the main component metal powder. Produced. Glass or ceramic powder may be added to the conductor paste in order to match the sintering behavior of the ceramic green sheet or to increase the bonding strength with the substrate 2 after sintering.

  Next, external terminals 8 and 9 are formed on the outer surface of the base 2. The external terminals 8 and 9 function as a conductive path for applying a voltage from the external power source to the first conductor 4 and the second conductor 6, and the first conductor 4 and the first conductor 4 led out to the outer surface of the base 2. The two conductors 6 are electrically connected to each other. The external terminals 8 and 9 are made of a metal powder conductor such as tungsten, molybdenum, platinum, copper, or silver, and a predetermined ceramic green sheet for the substrate 2 is used by printing means such as screen printing or spray printing. The conductive paste can be printed and applied at the position and simultaneously fired with the ceramic green sheet for the substrate 2 to be formed at a predetermined position of the dielectric structure U1.

  The first conductor 4, the second conductor 6, and the external terminals 8 and 9 are a ceramic green sheet for the base 2, a conductor paste for the first conductor 4 and the second conductor 6, and an external terminal. It can be formed by applying a conductor paste for 8, 9 and firing simultaneously. As another manufacturing method, the ceramic green sheet for the substrate 2 and the conductor paste for the first conductor 4 and the second conductor 6 are simultaneously fired, and then the conductor paste for the external terminals 8 and 9. The external terminals 8 and 9 can be formed at predetermined positions of the dielectric structure U1 by printing, applying, and baking to a desired position.

  The conductor paste for the external terminals 8 and 9 is produced in the same manner as the conductor paste for the first conductor 4 and the second conductor 6, but is adjusted to a viscosity suitable for printing by the amount of the organic binder and the organic solvent. Is done.

  In addition, it is preferable to form a metal having excellent corrosion resistance such as nickel or gold on the exposed surfaces of the external terminals 8 and 9 by a plating method or a vapor deposition method. The nickel plating layer having a thickness of about 1 to 10 μm is used to suppress the oxidative corrosion of the external terminals 8 and 9 and to strengthen the bonding between the external terminals 8 and 9 and the power supply terminal of the external power source. And a gold plating layer having a thickness of about 0.1 to 3 μm are preferably formed sequentially. Note that the external terminals 8 and 9 may also be formed of a single layer of metal having excellent corrosion resistance, such as nickel or gold, when used at a high temperature, as described above.

  Alternatively, the external terminals 8 and 9 are made of an iron-nickel alloy, an iron-nickel-cobalt alloy, platinum, copper, silver, or the like attached to a predetermined position after firing the ceramic green sheet for the substrate 2. It may be a board. For example, a brazing material mainly composed of silver and copper, or, when used at a relatively low temperature, a brazing material mainly composed of tin or silver is printed at a desired position after firing the ceramic green sheet for the substrate 2. Apply and fix the metal plate at the same position as the brazing material. Then, it can join to the external terminals 8 and 9 formed in the base | substrate 2 by performing brazing or reflow at the melting temperature of a brazing material. Moreover, when using at lower temperature, you may use the electrically conductive paste which knead | mixed metal powders, such as silver, resin, such as an epoxy, and an organic solvent, and was made into the paste form.

  Then, the reference potential side power supply terminal of the external AC power supply is electrically connected to the external terminal 8 by means such as pressure contact or joining, and the high voltage side power supply terminal is electrically connected to the external terminal 9 by means such as pressure contact or joining. Then, when an alternating high voltage is applied, creeping discharge can be generated in the discharge region 11.

  Also, the reference potential side power supply terminal of the external DC power supply is electrically connected to the external terminal 8 by means such as pressure contact or joining, and the high voltage side power supply terminal is electrically connected to the external terminal 9 by means such as pressure contact or joining. Then, when a DC high voltage is applied, the electric field region 15 can be formed.

Hereinafter, an operation of the dielectric structure U1 when a voltage is applied between the external terminals 8 and 9 of the dielectric structure U1 and a fluid is supplied to the through hole 3 will be described with reference to FIG. First, an alternating voltage is applied between the first conductor 4 and the second conductor 6 by the power source V <b> 1 to generate creeping discharge in the discharge region 11. When a fluid is supplied from the opening on the second surface S2 side where the second conductor 6 is formed into the through hole 3 of the dielectric structure U1, the fluid supply unit 12 forms fine particles in the fluid. Impurities pass through the creeping discharge region in the discharge region 11 and are decomposed by exchanging plasma (excited electrons).

For example, C (soot) is oxidized and reformed by the reaction shown in the following formula (1) under an oxygen condition with an oxygen concentration of about 10% or more to generate CO ₂ .

C + O ₂ → CO ₂ (1)
Further, for example, C _n H _m (organic substance) is oxidized and reformed by the reaction shown in the following formula (2) under an oxygen condition where the oxygen concentration is about 10% or more, and CO ₂ and H ₂ O Is generated.

_{C n H m + 2O 2 →} C n-1 H m-4 + CO 2 + 2H 2 O ··· (2)
In order to generate creeping discharge between the first conductor 4 and the second conductor 6, an alternating voltage having a high frequency is applied between the first conductor 4 and the second conductor 6. . The applied AC voltage is appropriately selected depending on the required creeping discharge intensity and the like. For example, the frequency of the alternating voltage applied in the dielectric structure U1 that modifies C (soot) in the exhaust gas of a diesel engine is, for example, 1 kHz to 100 MHz.

  The voltage applied between the first conductor 4 and the second conductor 6 may be a pulse voltage in addition to the AC voltage. The AC voltage is not limited to a sine wave voltage, and may be a rectangular wave voltage or a square wave voltage.

  As described above, in the dielectric structure U1 according to the present embodiment, the second conductor 6 is provided on the surface to which the fluid is supplied, and along the through hole 7 of the second conductor 6, that is, the dielectric. Since creeping discharge occurs along the fluid inlet of the structural structure U1, the particulate impurities in the fluid react with the plasma at the fluid inlet of the dielectric structure U1. Thereby, the particulate impurities in the fluid can be reacted with the plasma on the second surface S2 where the fluid tends to stay, and the reaction efficiency of the particulate impurities can be increased.

  The through hole 3 of the dielectric structure U1 has an opening area of the opening on the first surface S1 larger than the opening area of the opening on the second surface S2. Moreover, when the dielectric structure U1 is projected in the penetration direction of the through-hole 3, the position of the inner peripheral surface at a location close to the second surface S2 among any two locations of the through-hole 3 separated along the penetration direction is In addition, the through hole 3 is formed so as to be present inside the inner peripheral surface near the first surface S1, and the diameter of the through hole 3 gradually increases toward the downstream side of the fluid. Thereby, the diameter of the through hole 3 is reduced in the vicinity of the fluid inlet of the dielectric structure U1, the plasma is generated densely, the reaction efficiency of the processing fluid is increased, and the through hole 3 becomes closer to the fluid outlet. The diameter can be increased and the treated fluid can be smoothly discharged from the dielectric structure U1. As a result, while reducing the pressure loss of the processing fluid, the power consumption can be reduced and the reaction efficiency of the particulate impurities in the fluid can be increased.

  In the dielectric structure U1 shown in FIGS. 1 to 4, the second conductor 6 is provided on the second surface S2. However, the first conductor 5 and the second surface S2 in the base 2 are interposed between the second conductor S and the second surface S2. It may be provided. Even in such a case, it is possible to reduce the power loss while reducing the pressure loss of the processing fluid and increase the reaction efficiency of the fine particulate impurities in the fluid. Further, since the second conductor 6 is provided inside the base body 2, corrosion of the second conductor 6 by the processing fluid and plasma can be suppressed.

  Furthermore, as shown in FIG. 5, when a DPF (Diesel particulate filter) 13 is provided downstream of the dielectric structure U1 to further collect particulate impurities contained in the fluid, the dielectric structure U1 penetrates. Since the opening area of the opening on the first surface S1 of the hole 3 is large, the amount of fluid flowing through the DPF 13 per unit time increases, so that the collection efficiency can be increased.

  Further, when the plasma generated in the dielectric structure U1 flows into the downstream DPF 13, there is no shadow for the plasma flow on the connecting surface between the dielectric structure U1 and the DPF 13, that is, the path through which the plasma passes in the DPF 13. In other words, since it becomes thicker, the plasma flows into the DPF 13 without hindering the flow. As a result, when the particulate impurities contained in the fluid are collected by the DPF 13, the particulate impurities can be processed with high reaction efficiency.

  Further, as shown in FIG. 6, an electrode 14 is provided downstream of the DPF 13, and an AC voltage is applied between the first conductor 4 and the second conductor 6, and then the first conductor 4 and the electrode 14 are connected. When a DC voltage is applied between them, the particulate impurities charged in the discharge region 11 are attracted to the DPF 13 and the collection efficiency of the DPF 13 can be further increased. In addition, the plasma generated in the discharge region 11 is attracted to the electrode 14 and the plasma region expands downstream. As a result, the particulate impurities charged in the discharge region 11 are collected in the DPF 13 and the particulate impurities react with the plasma in the DPF 13 to be modified. As a result, more particulate impurities can be decomposed and modified.

  Further, when the plasma generated in the dielectric structure U1 is attracted to the electrode 14 and flows into the downstream DPF 13, there is no shadow for the plasma flow on the connecting surface of the dielectric structure U1 and the DPF 13, that is, Since the path through which the plasma passes in the DPF 13 becomes thicker, more plasma flows into the DPF 13 without being blocked by the plasma. As a result, when the particulate impurities contained in the fluid are collected by the DPF 13, the particulate impurities collected by the DPF 13 can be decomposed and modified more efficiently.

  Furthermore, according to the dielectric structure U1 according to the present embodiment, a DC voltage can be applied between the first conductor 4 and the second conductor 6 of the dielectric structure U1. For example, as shown in FIG. 7, by supplying a reference potential to the first conductor 4 and applying a DC high voltage between the first conductor 4 and the second conductor 6, A strong electric field can be generated in a region in the through hole 3 corresponding to a region between the conductor 4 and the second conductor 6. When a strong electric field is generated in a region in the through hole 3 corresponding to a region between the first conductor 4 and the second conductor 6, this region is referred to as an electric field region 15.

  Here, when a DC voltage is applied after applying an AC voltage between the first conductor 4 and the second conductor 6, the particulate impurities charged positively or negatively by reaction with plasma in the discharge region 11 are: It is electrically attracted to the electric field region 15 and is electrically adsorbed on the surface of the substrate 2 that is in contact with the electric field region 15. Thereby, the particulate impurities can be removed from the fluid passing through the through hole 3.

  Hereinafter, an operation of the dielectric structure U1 when a voltage is applied between the external terminals 8 and 9 of the dielectric structure U1 and a fluid is supplied to the through hole 3 will be described with reference to FIG. First, an alternating voltage is applied between the first conductor 4 and the second conductor 6 by the power source V <b> 1 to generate creeping discharge in the discharge region 11. And if a fluid is supplied by the fluid supply part 13 from the opening part by the side of the 2nd surface S2 in which the 2nd conductor 6 is formed in the through-hole 3 of the dielectric structure U1, it will be contained in the fluid. A substance such as NOx reacts with the plasma in the discharge region 11 to be decomposed and reformed.

  Further, the particulate impurities in the fluid pass through the creeping discharge region in the discharge region 11 and are decomposed by the transfer of plasma (excited electrons).

For example, C (soot) is oxidized and reformed by the reaction shown in the following formula (1) under an oxygen condition with an oxygen concentration of about 10% or more to generate CO ₂ .

C + O ₂ → CO ₂ (1)
Further, for example, C _n H _m (organic substance) is oxidized and reformed by the reaction shown in the following formula (2) under an oxygen condition where the oxygen concentration is about 10% or more, and CO ₂ and H ₂ O Is generated.

_{C n H m + 2O 2 →} C n-1 H m-4 + CO 2 + 2H 2 O ··· (2)
Furthermore, some of the particulate impurities in the fluid are positively or negatively charged by the plasma.

  Next, the external terminals 8 and 9 are connected to the power source V2, and the voltage applied to the external terminals 8 and 9 is switched to a DC high voltage, whereby the charged particulate impurities are attracted to the electric field region 15, and the second conductor 6 and the charged fine particulate impurities can be electrically adsorbed on the surface of the substrate 2 in the vicinity of the second conductor 6. Thereby, the particulate impurities in the fluid can be removed.

  Here, when a DC voltage is applied between the first conductor 4 and the second conductor 6, the DC voltage is appropriately selected depending on the required electric field strength. For example, C (soot) in the exhaust gas of a diesel engine is charged in the discharge region 11, and then the C (soot) charged on the surface of the second conductor 6 and the base 2 in the vicinity of the second conductor 6 is electrically charged. The magnitude of the direct-current voltage applied when attracted to the surface is 1 kV to 50 kV or −50 kV to −1 kV. In addition, since soot is generally negatively charged in the discharge region 11, soot is supplied when a ground potential which is a reference potential is supplied to the first conductor 4 and a positive potential is supplied to the second conductor 6. The second conductor 6 and the surface of the base 2 near the second conductor 6 are electrically adsorbed.

  The dielectric structure U1 is provided with the second conductor 6 on the surface to which fluid is supplied, and along the through hole 7 of the second conductor 6, that is, along the fluid inlet of the dielectric structure U1. As a result of the occurrence of creeping discharge, the particulate impurities in the fluid react with the plasma at the fluid inlet of the dielectric structure U1 and have a charge. Therefore, when a DC voltage is applied between the first conductor 4 and the second conductor 6, these particulate impurities are attracted to the electric field region 15. Thereby, when the fluid is supplied to the dielectric structure U1, it is possible to prevent the particulate impurities from adhering to and depositing in the vicinity of the opening of the through hole 3, and for example, the particulate impurity can prevent the opening of the through hole 3 from opening. It is possible to prevent the fluid from becoming difficult to flow by blocking. Further, since the total amount of particulate impurities deposited on the surface of the second conductor 6 can be reduced, an increase in pressure loss of the fluid can be suppressed, and as a result, the particulate impurities in the fluid can be more stable over a long period of time. Can be decomposed and modified.

  In addition, when the DPF 13 is provided downstream of the dielectric structure U1 and the plasma generated in the dielectric structure U1 flows into the downstream DPF 13, a shadow portion against the plasma flow on the connecting surface of the dielectric structure U1 and the DPF 13 Is not present, that is, the path through which the plasma passes in the DPF 13 becomes so thick that the plasma flows into the DPF 13 without being hindered. As a result, when the particulate impurities contained in the fluid are collected by the DPF 13, the particulate impurities can be processed with high reaction efficiency.

(Second Embodiment)
FIG. 8 is a cross-sectional view corresponding to FIG. 2 of a dielectric structure according to the second embodiment of the present invention. In FIG. 8, the same components as those of FIG. As shown in FIG. 8, the dielectric structure U <b> 2 according to the present embodiment has a third conductor 16 on the first surface S <b> 1 of the base 2.
When the reference potential is supplied to the first conductor 4, an AC potential is supplied to the third conductor 16 as in the case of the second conductor 6. That is, an AC voltage is applied between the first conductor 4 and the third conductor 16. At this time, creeping discharge occurs near the surface of the third conductor 16.

  When creeping discharge is generated using the third conductor 16 in this way, fine impurities in the processing fluid can be reacted with plasma also at the fluid outlet of the dielectric structure U11. Here, the third conductor 16 may be a flat plate-like conductor having a through hole at a position corresponding to the through hole 3 of the base 2, or may be simply a plurality of individual conductors.

  Further, as shown in FIG. 8, the third conductor 16 preferably has a smaller cross-sectional area perpendicular to the penetration direction of the through hole 3 as the distance from the first surface S1 increases along the penetration direction. With such a shape, the flow of the fluid is not hindered, and even when a minute amount of particulate impurities that have not reacted with the plasma passes through the discharge region 11, the particulate impurities are deposited on the first surface S1. It becomes difficult to do. Therefore, since the total amount of particulate impurities deposited on the surface of the first surface S1 can be reduced, an increase in the pressure loss of the fluid can be suppressed, and as a result, the particulate impurities in the fluid can be more stable over a long period of time. It can be decomposed and modified.

  In order to form the cross-sectional area perpendicular to the penetration direction of the through hole 3 so as to decrease as the distance from the first surface S1 along the penetration direction, a die punching method, a laser punching method, or a cutting method is used. Different through holes with large to small diameters are formed in advance in a plurality of ceramic green sheets, and a plurality of ceramic green sheets are stacked in order of large to small diameters in the formed through holes and pressed with a press or the like. . If it does in this way, the through-hole 3 from which the diameter of a through-hole becomes large toward the 1st surface S1 from 2nd surface S2 can be obtained.

Furthermore, as another method, the desired position of the ceramic green sheet laminate is pressed from the first surface S1 side while being heated from about 40 ° C. to about 100 ° C. with a conical or convex mold. can diameter from 2 surface S 2 toward the first surface S 1 is obtained a through hole 3 larger.

  In the through hole 3 corresponding to the region between the first conductor 4 and the third conductor 16 by controlling the AC voltage applied between the first conductor 4 and the third conductor 16. In this region, creeping discharge can be generated. As described above, when a creeping discharge is generated between the first conductor 4 and the third conductor 16, more particulate impurities in the fluid can be reacted.

  Further, as described in the first embodiment, an AC voltage is applied between the first conductor 4 and the second conductor 6 and between the first conductor 4 and the third conductor 16. Thereafter, if a DC voltage is applied between the first conductor 4 and the second conductor 6 and at least one of the first conductor 4 and the third conductor 16, the charged particulate impurities are applied to the surface of the substrate 2. It can be adsorbed and particulate impurities can be removed from the fluid.

  Further, when the DPF 13 and the electrode 14 are provided downstream of the dielectric structure U2, at least the cross-sectional area of the third conductor 16 in the direction perpendicular to the penetrating direction of the through hole 3 decreases as the distance from the first surface S1 increases. If so, the area of the DPF 13 that is blocked by the base 2 is reduced. Therefore, when the plasma generated in the discharge region 11 is attracted to the electrode 14 through the DPF 13, there is no shadow for the plasma flow on the connecting surface of the dielectric structure U 1 and the DPF 13, that is, the plasma passes through the DPF 13. Since the path becomes thicker, the particulate impurities collected in the DPF 13 can be decomposed and modified more efficiently. That is, regarding this effect, the opening area of the opening on the first surface S1 and the opening area of the opening on the second surface S2 may be the same.

  Further, the cross-sectional area of the third conductor 16 is made substantially the same along the penetrating direction of the through-hole 3, and a dielectric member is further formed on the surface opposite to the surface adjacent to the first surface S1 of the third conductor 16. May be provided. And it is preferable that the dielectric member becomes small as the cross-sectional area perpendicular | vertical to the penetration direction of the through-hole 3 leaves | separates from 1st surface S1 along a penetration direction. With such a configuration, since the total amount of particulate impurities deposited on the surface of the first surface S1 can be reduced, an increase in pressure loss of the fluid can be suppressed, and as a result, particulate impurities in the fluid can be prevented over a long period. And can be decomposed and modified more stably. Moreover, since the 3rd conductor 16 can be made thin and a dielectric member can be given thickness, manufacturing cost can also be held down cheaply.

  Further, when the DPF 13 and the electrode 14 are provided downstream of the dielectric structure, at least the cross-sectional area of the dielectric member in the direction perpendicular to the penetrating direction of the through hole 3 decreases as the distance from the first surface S1 increases. The area of the DPF 13 that is blocked by the base 2 is reduced. Therefore, when the plasma generated in the discharge region 11 is attracted to the electrode 14 through the DPF 13, there is no shadow for the plasma flow on the connecting surface between the dielectric structure U2 and the DPF 13, that is, the plasma passes through the DPF 13. Since the path becomes thicker, the particulate impurities collected in the DPF 13 can be decomposed and modified more efficiently.

  As for the effect when the DPF 13 is provided downstream, the opening area of the opening on the first surface S1 and the opening area of the opening on the second surface S2 may be the same. Even in such a case, if the cross-sectional area of the dielectric member decreases with distance from the first surface S1, there is no shadow for the plasma flow on the connecting surface between the dielectric structure U2 and the DPF 13, that is, in the DPF 13. Since the path through which the plasma passes becomes thicker, the particulate impurities collected in the DPF 13 can be decomposed and modified more efficiently.

(Third embodiment)
FIG. 9 is a sectional view of a dielectric structure according to the third embodiment of the present invention. 9, the same components as those in FIG. 2 are denoted by the same reference numerals. As shown in FIG. 9, the dielectric structure U <b> 3 according to the present embodiment is formed by arranging a plurality of substrates 2. Here, the dielectric structure U3 includes a plurality of bases 2a, 2b, 2c having at least one through hole 3a, 3b, 3c between the first surface and the second surface, and the bases 2a, 2b, 2c. The first conductors 4a, 4b, and 4c provided between the first surface and the second surface of the substrate, and the second surfaces of the substrates 2a, 2b, and 2c, respectively, and the outer edge portion of the second surface. It has 2nd conductor 6a, 6b, 6c located on the top. The plurality of bases 2a, 2b, and 2c have first conductors 4a, 4b, and 4c and second conductors 6a, 6b, and 6c alternately positioned, and through holes 3a, 3b, and 3c provided in each base 2 Are arranged to communicate with each other.

  Further, each of the through holes 3a, 3b, 3c provided in the bases 2a, 2b, 2c has an opening area on the first surface S1 larger than an opening area on the second surface S2. Thereby, the opening area of the through holes 3a, 3b, 3c in the first surface S1 located at one end in the arrangement direction of the plurality of base bodies 2a, 2b, 2c is the same as the arrangement direction of the plurality of base bodies 2a, 2b, 2c. Are formed larger than the opening areas of the through holes 3a, 3b, 3c on the second surface S2 located at the other end.

  In order to form such through-holes 3a, 3b, 3c, a plurality of ceramic green sheets are formed on each of the dielectric structures U1, U2, U3 by a die punching method, a laser punching method, a cutting method or the like. The through holes having different diameters from large to small may be formed in advance, and a plurality of ceramic green sheets may be stacked in order from the large through small diameters of the formed through holes and pressed with a press or the like. If it does in this way, the through-hole 3 from which the diameter of a through-hole becomes large toward the 1st surface S1 from 2nd surface S2 can be obtained. The shape shown in FIG. 9 can be formed by connecting or joining the dielectric structures U1, U2 and U3 thus formed.

Furthermore, as another method, for each of the dielectric structures U1, U2, and U3, the desired position of the ceramic green sheet laminate from the first surface S1 side is 40 ° C. to 100 ° C. with a conical or convex mold. by pressing with heating to about ° C., can be radial from the second surface S 2 toward the first surface S 1 is obtained a becomes the through-hole 3 increases. The shape shown in FIG. 9 can be formed by connecting or joining the dielectric structures U1, U2 and U3 thus formed.

  Here, an AC voltage is applied between the first conductors 4a, 4b, 4c and the second conductors 6a, 6b, 6c of the dielectric structure U3 in the same manner as the dielectric structure U1 according to the first embodiment. When applied, discharge regions 11a, 11b, 11c are formed between the first conductors 4a, 4b, 4c and the second conductors 6a, 6b, 6c.

  In addition, the through-hole which consists of the through-holes 3a, 3b, and 3c that communicate and penetrates the dielectric structures U1, U2, and U3 can also be called a continuous through-hole. One continuous through hole has three discharge regions 11a, 11b, and 11c.

  In such a dielectric structure U3, when there are many particulate impurities in the fluid entering the through hole 3a, plasma is generated in all the discharge regions 11a, 11b, and 11c, and particulate impurities in the fluid are generated. Decompose and reform. When there are few particulate impurities in the fluid entering the through-hole 3a, plasma is generated in any one of the discharge regions 11a, 11b, and 11c to decompose and modify the particulate impurities in the fluid. Do. Thus, in the dielectric structure U3, the particulate impurities can be decomposed and modified while appropriately controlling the power consumption according to the amount of the particulate impurities in the fluid.

  When a DC voltage is applied between the first conductors 4a, 4b, 4c and the second conductors 6a, 6b, 6c in the same manner as the dielectric structure U1 according to the first embodiment, the first conductor Electric field regions 15a, 15b, 15c are formed between 4a, 4b, 4c and the second conductors 6a, 6b, 6c. Further, when the DPF 13 or the DPF 13 and the electrode 14 are provided downstream of the dielectric structure U3, the same effects as those described in the first embodiment can be obtained.

  In addition, in the dielectric structure U3, a plurality of discharge regions 11 can be formed, so that the amount of fine particles impurities that have not reacted with plasma can be reduced in the processing fluid discharged from the fluid outlet. Further, in the dielectric structure U3, since the plurality of electric field regions 15 can be formed, the amount of particulate impurities can be reduced in the processing fluid discharged from the fluid outlet.

Further, in the dielectric structure U3, the voltage applied between the first conductors 5a, 5b, 5c and the second conductors 6a, 6b, 6c can be changed, so that the discharge regions 11a, 11b, The amount of plasma generated in 11c, the frequency of plasma generation, and the plasma intensity can be changed for each discharge region 11a, 11b, 11c. For this reason, it is possible to perform decomposition with different decomposition efficiencies for a plurality of types of particulate impurities in the fluid. For example, in the discharge region 11a, C (soot) is mainly decomposed, and in the discharge region 11b, C _n H _m is mainly decomposed, so that the materials to be decomposed by the discharge regions 11a, 11b, and 11c are different. Can do.

Note that the operation and effects when the DPF 13 is provided downstream of the dielectric structure U3 are the same as the operations and effects described in the first and second embodiments.
(Fourth embodiment)
FIG. 10 is a cross-sectional view corresponding to FIG. 2 of a dielectric structure according to a fourth embodiment of the present invention. 10, the same components as those in FIG. 2 are denoted by the same reference numerals. As shown in FIG. 10, in the dielectric structure U4 according to the present embodiment, the opening area of the opening on the first surface S1 is larger than the opening area of the opening on the second surface S2. Then, when the dielectric structure U3 is projected in the penetration direction of the through-hole 3, the second surface S located at one end in the arrangement direction among any two locations of the through-holes 3 separated along the penetration direction. The position of the inner peripheral surface at a location close to 2 is the same as or more inside than the position of the inner peripheral surface at a location close to the first surface S1 located at the other end in the arrangement direction.

  According to the dielectric structure U4 shown in FIG. 10, unlike the dielectric structures U1 to U3 described so far, the diameter of the through hole 3 increases stepwise toward the surface S1 along the penetration direction. Even in such a case, the diameter of the through hole 3 is reduced in the vicinity of the fluid inlet of the dielectric structure U1 to generate plasma densely, increasing the reaction efficiency of the processing fluid, and as the fluid outlet is approached. The diameter of the through hole 3 is increased, and the processed fluid can be smoothly discharged from the dielectric structure U1. As a result, while reducing the pressure loss of the processing fluid, the power consumption can be reduced and the reaction efficiency of the particulate impurities in the fluid can be increased.

  Further, when the diameter of the through hole 3 gradually increases, the fluid can be discharged more smoothly. However, when the diameter of the through hole 3 increases in a stepwise manner, the inner circumference of the through hole 3 is increased. Since a step is formed at a portion where the diameter changes on the surface, fluid easily accumulates temporarily at the step portion. Therefore, when the discharge region 11 is formed so that the step portion is located inside, the particulate impurities in the fluid can be reacted efficiently. In addition, a catalyst that reacts with particulate impurities may be supported on the stepped portion.

  In order to increase the diameter of the through-hole 3 in stages, different through-holes having large to small diameters are previously formed in a plurality of ceramic green sheets by a die punching method, a laser punching method, a cutting method, or the like. It is preferable to form a plurality of ceramic green sheets in order from the largest through the smallest diameter of the through-holes and pressurize them with a press or the like. If it does in this way, the through-hole 3 from which the diameter of a through-hole becomes large toward the 1st surface S1 from 2nd surface S2 can be obtained. Thus, it is possible to obtain the through hole 3 in which the diameter of the through hole 3 is increased stepwise.

  Note that the operation and effect when the DPF 13 or the DPF 13 and the electrode 14 are provided downstream of the above-described dielectric structures U1 to U3 are the same as those described in the first embodiment.

  In the above-described dielectric structures U1 to U4, if the first conductor 4 and the second conductor 6 each have a region along the inner peripheral surface of the through hole 3, When an AC voltage is applied between the first conductor 4 and the second conductor 6, creeping discharge occurs in the through hole 3. Therefore, the 1st conductor 4 and the 2nd conductor 6 do not necessarily need to be arrange | positioned facing each other. However, when the first conductor 4 and the second conductor 6 are arranged to face each other, the electric field strength generated between the first conductor 4 and the second conductor 6 becomes more uniform, and as a result, the discharge Since the plasma density generated in the region 11 is also more uniform, it is possible to more stably decompose and modify the particulate impurities.

  In the above-described dielectric structures U1 to U4, the first conductor 4 and the second conductor 6 are flat conductors each having a through hole at a position corresponding to the through hole 3. As described above, in the case of a flat conductor, when a voltage is applied to the first conductor 4 and the second conductor 6, the convex portions where the electric field concentrates are reduced, and a more uniform electric field strength can be obtained. As a result, since the plasma density generated in the discharge region 11 becomes more uniform, more stable decomposition and modification of particulate impurities are possible.

  In the above-described dielectric structures U1 to U4, the second conductor 6 may have a through hole in addition to the position corresponding to the through hole 3. FIG. 11 is a cross-sectional view showing a modification of the dielectric structure U1 in such a case. As shown in FIG. 11, the second conductor 6 has a through hole 7 a at a position corresponding to the through hole 3 and also has a through hole 7 b at another position. In such a dielectric structure, it is possible to generate a creeping discharge also in a region along the through hole 7 b of the second conductor 6. As a result, it is possible to more efficiently decompose and modify the particulate impurities attached and deposited in the opening region of the through hole 7b. Therefore, in the case of long-term use, the accumulation of particulate impurities that may drop off due to vibration or the like and deposit at the fluid inlet can be removed in advance, and more stable decomposition and reforming efficiency can be obtained over a long period of time. Is possible.

  Further, when the above-described dielectric structures U <b> 1 to U <b> 4 are seen in a plan view in the penetration direction of the through hole 3, the outer edge portion of the second conductor 6 is located outside the outer edge portion of the first conductor 4. However, if it is located inside, creeping discharge is likely to occur along the outer edge of the second conductor 6. When creeping discharge is generated along the outer edge in this way, the particulate impurities attached and deposited near the outer edge of the second conductor 6 can be more efficiently decomposed and modified.

  Moreover, in the above-described dielectric structures U1 to U4, the outer edge portion of the second conductor 6 is located on the second surface S2 of the base body 2, and this outer edge portion is, for example, on the third surface S3 or the fourth surface. It may be located on the surface S4. However, if the outer edge portion of the second conductor 6 is on the second surface S2 perpendicular to the fluid flow direction, the possibility that particulate impurities are deposited near the fluid inlet can be further reduced.

  In the above description, when a DC voltage is applied to the external terminals 8 and 9, that is, the first and second conductors 4 and 6 and then switched to the AC voltage again, the discharge region 11 is formed again, and the base 2 The particulate impurities adsorbed on the surface can be decomposed and modified by plasma.

  When the voltage applied to the external terminals 8 and 9 is controlled in this way, particulate impurities that could not be decomposed in the first creeping discharge are also charged and adsorbed on the surface of the substrate 2, and then decomposed and modified by plasma again. Therefore, the particulate impurities can be removed more sufficiently. Furthermore, since it is possible to remove the particulate impurities adhering to the substrate 2, it is possible to further suppress an increase in the pressure loss of the fluid, and as a result, the particulate impurities in the fluid can be further reduced over a long period of time. It can be stably decomposed and modified.

  In the above description, attention is focused only on particulate impurities. For example, other substances contained in a fluid such as NOx also react with the plasma in the discharge region 11 to be decomposed and modified.

(Fifth embodiment)
FIG. 12 is a cross-sectional view showing a configuration example of a dielectric structure according to the fifth embodiment of the present invention. In FIG. 12, the same components as those of the dielectric structure U1 according to the first embodiment are denoted by the same reference numerals, and description thereof is omitted. In the dielectric structure U5 according to the present embodiment, the second conductor 6 is provided not on the second surface S2 but on the first surface S1. In addition, the second conductor 6 has a smaller cross-sectional area perpendicular to the penetration direction of the through hole 7 as the distance from the first surface S1 increases along the penetration direction. The diameter of the through hole 7 increases as the distance from the first surface S1 increases.

  At this time, when an AC voltage is applied between the first conductor 4 and the second conductor 6 via the external terminals 8 and 9, the opening of the discharge region 11 and the through hole 7 of the second conductor 6. Creeping discharge occurs in the area. When the fluid supplied by the fluid supply unit 12 passes through the creeping discharge region, the particulate impurities in the fluid react with the plasma and are decomposed and reformed. However, some of the particulate impurities remain in a charged state without being decomposed. Next, when a reference potential is supplied to the first conductor 4 and a DC voltage is applied between the first conductor 4 and the second conductor 6, the charged particulate impurities are attracted to the electric field region 15. Then, it is electrically adsorbed on the surface of the substrate 2 in contact with the electric field region 15.

  In the dielectric structure U5 according to the present embodiment, the second conductor 6 is provided on the surface on the fluid discharge side, and along the through hole 7 of the second conductor 6, that is, the dielectric structure U5. Creeping discharge occurs along the fluid discharge port. Here, by arranging the DPF 13 and the electrode 22 on the downstream side of the dielectric structure U5 in the fluid flow direction, the following operation can be realized. First, a reference potential is supplied to the first conductor 4, an AC voltage is applied between the first conductor 4 and the second conductor 6 by the power source V <b> 1, and the discharge region 11 and the second conductor 6 pass through. A creeping discharge is generated in the opening region of the hole 7. Then, a DC voltage is applied between the electrode 22 and the first conductor 4 using the power source V <b> 3 while an AC voltage is applied between the first conductor 4 and the second conductor 6. Then, the plasma generated on the second conductor 6 side is attracted to the electrode 22, the plasma region expands to the downstream side, and flows into the DPF 13.

  As a result, the particulate impurities charged in the discharge region 11 are attracted to the electrode 22 and collected by the DPF 13, react with the plasma inside the DPF 13, and are modified. That is, more particulate impurities can be decomposed and modified.

  In addition, since there is no shadow for the plasma flow on the connecting surface of the dielectric structure U1 and the DPF 13, that is, the path through which the plasma passes in the DPF 13 becomes thicker, so that the plasma is not disturbed. Plasma flows into the DPF 13. As a result, when the particulate impurities contained in the fluid are collected by the DPF 13, the particulate impurities collected by the DPF 13 can be decomposed and modified more efficiently.

  In addition, since the diameter of the through hole 7 of the second conductor 6 is increased as the distance from the first surface S1 increases, the flow of the fluid is not hindered, and a small amount of fine impurities that are unreacted with the plasma are discharged in the discharge region. Even when passing through 11, the particulate impurities are difficult to deposit on the first surface S1. Therefore, since the total amount of particulate impurities deposited on the surface of the first surface S1 can be reduced, an increase in the pressure loss of the fluid can be suppressed, and as a result, the particulate impurities in the fluid can be more stable over a long period of time. It can be decomposed and modified.

(Sixth embodiment)
FIG. 13 is a conceptual diagram showing a structural configuration of the reaction apparatus 100 according to the sixth embodiment of the present invention. In addition, about the structure similar to 1st Embodiment, the same code | symbol as 1st Embodiment is attached | subjected and description is abbreviate | omitted.

  The reaction apparatus 100 includes the dielectric structure U1 of the first embodiment, and is configured as an apparatus that processes and discharges a fluid to be processed by the dielectric structure U1. The fluid to be treated is, for example, exhaust gas of an internal combustion engine of an automobile, and NOx is reformed by a chemical change in the through hole 3. Further, for example, the fluid to be treated is chlorofluorocarbon used as a cooling medium in a refrigerator or an air conditioner, and chlorofluorocarbon is decomposed by a chemical change in the through hole 3. In the following description, a portion of the reaction apparatus 100 other than the dielectric structure U1 may be referred to as a reaction apparatus main body 101.

  The reactor main body 101 includes a fluid source 103 that supplies a fluid to be processed, a supply pipe 105 that guides the fluid to be processed from the fluid source 103 to the dielectric structure U1, and a fluid to be processed that has been processed by the dielectric structure U1. The discharge pipe 107 for discharging the fluid, the pump 109 for the fluid to be processed for controlling the flow of the fluid to be processed, the refrigerant source 111 for supplying the cooling medium, and the cooling medium from the refrigerant source 111 to the dielectric structure U1 Supply flow pipe 50A (an example of a cooling unit), discharge flow pipe 50B for guiding the cooling medium from dielectric structure U1 to refrigerant source 111, and cooling medium pump 113 (cooling) for controlling the flow of the cooling medium An example). The fluid source 103 and the supply pipe 105 constitute a fluid supply unit.

  The fluid source 103 generates a fluid to be processed such as an internal combustion engine of an automobile that discharges exhaust gas as the fluid to be processed. Alternatively, the fluid source 103 holds a fluid to be processed such as a tank that holds a cooling medium of a used refrigerator or an air conditioner.

  One end side of the supply pipe 105 communicates with a space for generating or holding a fluid to be processed of the fluid source 103, and the other end side communicates with the through hole 3 of the dielectric structure U1. The dielectric pipe body U1 side of the supply pipe 105 corresponds to the number of the through holes 3, and is referred to as a first branch part 105aA, a second branch part 105aB, a third branch part 105aC (hereinafter simply referred to as “branch part 105a”, The first branch part 105aA to the third branch part 105aC communicate with the through hole 3A to the through hole 3C, respectively.

One end side of the discharge pipe 107 communicates with the through hole 3 of the dielectric structure U1 from the opposite side to the supply pipe 105, and the other end side is opened to the atmosphere, or holds the processed fluid after processing. It communicates with a space (not shown) in which another processing is performed on the processed fluid after processing. The dielectric pipe U1 side of the discharge pipe 107 corresponds to the number of the through holes 3, and the first branch part 107aA and the second branch part 107a.
B, branching into a third branch part 107aC (hereinafter simply referred to as “branch part 107a”, which may not be distinguished from each other), and the first branch part 107aA to the third branch part 107aC are formed in the through holes 3A to It communicates with the through hole 3C. Note that the discharge pipe 107 may be omitted. For example, the processed fluid after processing may be directly discharged from the through hole 3 to the atmosphere.

  The supply pipe 105 and the discharge pipe 107 are formed of an appropriate material such as metal or resin. The supply pipe 105 and the discharge pipe 107 may or may not have flexibility. For example, the branch portion 105a and the branch portion 107a are connected to the through hole 3 by bringing the end portions of the branch portion 105a and the branch portion 107a into contact with the side surface of the base 2 that does not have the opening of the through hole 3. The branch portion 105a and the branch portion 107a are fixed to the base body 2 by an appropriate fixing member such as an adhesive or a screwing member. The branching portion 105a and the branching portion 107a are fitted and inserted into the through hole 3, or a protruding annular portion such as an outflow connection pipe is formed integrally with the base body 2 at the end of the through hole 3, and the protruding portion May be carried out by fitting and inserting into the branch part 105a and the branch part 107a.

The fluid pump 109 to be processed is provided in at least one of the supply pipe 105 and the discharge pipe 107. FIG. 10 illustrates a case where the supply pipe 105 is provided. When the fluid to be processed is caused to flow by the power of the fluid source 103, such as when the fluid source 103 is an internal combustion engine, the pump for fluid to be processed 109 may be omitted. In addition, the pump for fluid to be processed 109 can be provided in the dielectric structure U1. The fluid pump 109 to be processed may be constituted by an appropriate pump such as a rotary pump or a reciprocating pump.
The refrigerant source 111 includes, for example, a heat exchanger, and lowers the temperature of the cooling medium from the discharge flow pipe 50B by the heat exchanger and supplies it to the supply flow pipe 50A. Note that the coolant source 111 need only be able to supply a cooling medium, and may not receive the cooling medium from the discharge flow pipe 50B and circulate the cooling medium. That is, the cooling medium from the discharge flow pipe 50 </ b> B may be discharged to a location different from the refrigerant source 111. For example, when tap water is used as the cooling medium, the water from the discharge flow pipe 50 </ b> B may be discharged to a location different from the water source as the refrigerant source 111. Conversely, when the cooling medium is circulated, the refrigerant source 111 may be omitted.

  One end of the supply flow pipe 50A communicates with the refrigerant source 111, and the other end communicates with the through hole 3 (flow path) of the dielectric structure U1 via the inflow connection pipe as described above. ing. One end of the discharge flow pipe 50 </ b> B communicates with the through hole 3 of the dielectric structure U <b> 1 through an outflow connection pipe provided integrally with the base 2, and the other end communicates with the refrigerant source 111. ing. The flow tube 50 is formed of an appropriate material such as metal or resin. The flow tube 50 may or may not have flexibility.

  The cooling medium pump 113 is provided in at least one of the supply flow pipe 50A and the discharge flow pipe 50B. FIG. 10 illustrates the case where the supply flow pipe 50A is provided. Note that the cooling medium pump 113 is omitted when the coolant source 111 is a tank in a high position and power for flowing the cooling medium appropriately can be obtained, for example, the cooling medium can flow by gravity. Also good. The cooling medium pump 113 can also be provided in the dielectric structure U1. The cooling medium pump 113 may be configured by an appropriate pump such as a rotary pump or a reciprocating pump.

  FIG. 14 is a block diagram showing the configuration of the electrical system of the reaction apparatus 100. Here, as an example, a temperature detection element 115 for detecting the temperature of the base 2 and a heater 116 for heating the base 2 are provided inside the base 2. Further, the external terminals 8 and 9 for applying a voltage to the first conductive rod 4 and the second conductor 6 and the sensor terminal 118 for outputting an electric signal from the temperature detecting element 115 are provided on the surface of the base 2. The heater terminals 119 for supplying power to the heater 116 are exposed.

  The reactor main body 101 includes a conductor terminal 117, a sensor terminal 118, a device-side conductor terminal 141 connected to the heater terminal 119, a device-side sensor terminal 143, and a device-side heater terminal 145. Yes. The dielectric structure U1 is driven and controlled by power supplied from the reaction device main body 101 through these terminals. Specifically, it is as follows.

  The power supply unit 121 is configured to include, for example, a battery, and converts DC power from the battery into AC power or DC power having an appropriate voltage for supply. Alternatively, AC power having a commercial frequency is converted into AC power or DC power having an appropriate voltage and supplied. The power of the power supply unit 121 is supplied to the control unit 123, the discharge control unit 125, the temperature detection unit 127, the heater driving unit 129, the fluid pump 109 to be processed, and the cooling medium pump 113.

  The discharge control unit 125 converts the power supplied from the power supply unit 121 into AC power having a voltage corresponding to the control signal from the control unit 123, and converts the converted power into the device-side conductor terminal 141 and the conductor. The first conductor 4 and the second conductor 6 are supplied through the terminal 117 for use. For example, the discharge control unit 125 includes a power supply circuit such as an inverter or a transformer. At this time, in the discharge region 11, an amount of discharge corresponding to the voltage applied by the discharge control unit 125 is performed.

  Further, the discharge control unit 125 converts the power supplied from the power supply unit 121 into a DC voltage having a voltage corresponding to the control signal from the control unit 123, and converts the converted power into the device-side conductor terminal 141 and The first conductor 4 and the second conductor 6 are supplied via the conductor terminal 117. For example, the discharge control unit 125 includes a power supply circuit such as an inverter or a transformer. At this time, in the electric field region 15, a potential gradient according to the voltage applied by the discharge control unit 125 is formed, and the particulate impurities charged in the electric field region 15 can be collected.

  For example, when the temperature detection element 115 is configured by a resistor whose resistance value changes due to a temperature change, the temperature detection unit 127 converts the power supplied from the power supply unit 121 into DC power or AC power of an appropriate voltage. Then, the converted electric power is supplied to the temperature detection element 115 via the device-side sensor terminal 143 and the sensor terminal 118. Then, the temperature detection element 115 detects the resistance value of the temperature detection element 115 and outputs a signal corresponding to the detected resistance value to the control unit 123. The temperature detection element 115 may calculate the temperature of the temperature detection element 115 based on the detected resistance value and output a signal corresponding to the calculated value to the control unit 123.

  The heater drive unit 129 converts the power supplied from the power supply unit 121 into DC power or AC power having a voltage corresponding to a control signal from the control unit 123, and converts the converted power into the device-side heater conductor 145 and The heat is supplied to the heater 116 via the heater conductor 119. The heater driving unit 129 includes a power supply circuit such as a rectifier circuit or a transformer, for example. The heater 116 generates heat in an amount corresponding to the voltage applied by the heater driving unit 129.

  Each of the fluid pump 109 and the cooling medium pump 113 includes, for example, a motor as a pump drive source and a motor driver that drives the motor, although not particularly illustrated. The electric power supplied from the power supply unit 121 is converted into AC power or DC power having a voltage corresponding to a control signal from the control unit 123 and applied to the motor. The motor rotates at the number of rotations corresponding to the applied voltage, and consequently a force corresponding to the applied voltage is applied to the fluid to be processed and the cooling medium.

  The input unit 131 receives a user operation and outputs a signal corresponding to the user operation to the control unit 123. For example, the input unit 131 receives a drive start operation, a drive stop operation, various temperature setting operations related to temperature setting and flow rate control of the reaction apparatus 100, and outputs a signal corresponding to the operation. The input unit 131 includes, for example, a control panel including various switches and a keyboard.

  For example, although not particularly illustrated, the control unit 123 is configured by a computer including a CPU, a ROM, a RAM, and an external storage device. The control unit 123 outputs control signals to the discharge control unit 125, the heater driving unit 129, the fluid to be processed pump 109, and the cooling medium pump 113 based on signals from the temperature detection unit 127 and the input unit 131.

  For example, when a signal corresponding to the driving start operation of the reaction apparatus 100 is input from the input unit 131, the control unit 123 instructs the discharge control unit 125 to start supplying power to the conductor terminal 117. When a control signal is output and a signal corresponding to a driving stop operation of the reaction apparatus 100 is input from the input unit 131, the supply of power to the first conductor 4 and the second conductor 6 is stopped. A control signal is output to the discharge controller 125.

  Further, for example, in the control unit 123, the temperature detected by the temperature detection unit 127 does not reach a predetermined target temperature set as a temperature at which the dielectric structure U1 can efficiently generate creeping discharge. If it is determined, the control signal is output to the discharge control unit 125 so that the power supplied to the first conductor 4 and the second conductor 6 is increased more than the power supplied during normal operation, and the dielectric structure When the body U1 reaches the target temperature, a control signal is output to the discharge controller 125 so that the power supplied to the first conductor 4 and the second conductor 6 is maintained at the power supplied during normal operation. .

  Further, for example, the control unit 123 determines that the temperature detected by the temperature detection unit 127 does not reach a predetermined target temperature set as a temperature at which the dielectric structure U1 can efficiently generate plasma. If it is determined, a control signal is output to the heater drive unit 129 so that power is supplied to the heater 116 or power supplied to the heater 116 is increased. When the dielectric structure U1 reaches the target temperature, a control signal is sent to the heater drive unit 129 so that the power supplied to the heater 116 is reduced or the power supply to the heater 116 is stopped. Output.

  Further, for example, the control unit 123 may detect the temperature detected by the temperature detection unit 127 and the temperature at which the dielectric structure U1 can efficiently generate creeping discharge, or the dielectric structure U1 and the reaction device main body. When the detected temperature is higher than the target temperature, the flow rate of the cooling medium is increased. When the detected temperature is lower than the target temperature, the flow rate of the cooling medium is compared. A control signal is output to the cooling medium pump 113 so as to lower the value.

  Further, for example, in the control unit 123, the temperature detected by the temperature detection unit 127 does not reach a predetermined target temperature set as a temperature at which the dielectric structure U1 can efficiently generate creeping discharge. If it is determined that the flow rate of the fluid to be processed is low, and if it is determined that the flow rate has been reached, a control signal is output to the pump 109 for fluid to be processed so as to increase the flow velocity of the fluid to be processed.

  Further, for example, the control unit 123 compares the temperature detected by the temperature detection unit 127 with a predetermined temperature range set as a temperature at which the dielectric structure U1 and the reaction device main body unit 101 are safely operated. When the detected temperature exceeds a set temperature range, a control signal is output so as to notify the occurrence of abnormality to a notifying unit such as a display device or a speaker (not shown).

  According to the third embodiment described above, the reactor 100 includes the dielectric structure U1 according to the first embodiment, the supply pipe 105 that supplies the fluid to be processed to the through hole 3, and the through hole 3. Since the discharge pipe 107 for discharging the reaction fluid obtained by generating plasma and chemically changing the fluid to be processed is provided, the durability of the dielectric structure U1 is improved as in the first embodiment. Further, the effect of reducing the size of the dielectric structure U1 can be obtained, and as a result, the durability of the reactor 100 can be improved and the effect of size reduction can be obtained.

  The present invention can be variously modified without departing from the gist of the present invention. For example, in the above description, the modification of exhaust gas such as diesel engines used in automobiles, ships, generators, etc. is described. It may be applied. For example, the present invention can be applied to an air cleaning device used for deodorization, dioxin decomposition, pollen decomposition, etc., plasma etching, a dielectric structure and a reaction device mounted on a thin film device or the like. Moreover, it is possible to apply to the dielectric structure for reacting or decomposing the fluid which passes the through-hole 3 by creeping discharge, and its reaction apparatus.

FIG. 1 is a front view of a dielectric structure according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along line AA ′ in FIG.
It is a front view of the dielectric structure U1 by the 1st Embodiment of this invention. It is sectional drawing in the AA 'line in FIG. FIG. 3 is a partially enlarged view of FIG. 2. It is a figure which shows the operation example of the dielectric structure by 1st Embodiment. It is a figure which shows the operation example of the dielectric structure by 1st Embodiment. It is a figure which shows the operation example of the dielectric structure by 1st Embodiment. It is a figure which shows the operation example of the dielectric structure by 1st Embodiment. It is sectional drawing which shows the dielectric structure by the 2nd Embodiment of this invention. It is sectional drawing which shows the dielectric structure by the 3rd Embodiment of this invention. It is sectional drawing which shows the dielectric structure by the 4th Embodiment of this invention. It is sectional drawing which shows the modification of the dielectric structure by 1st thru | or 4th embodiment. It is sectional drawing which shows the dielectric structure by the 5th Embodiment of this invention, and a figure which shows an electrical connection. It is a conceptual diagram which shows the structural structural example of the reaction apparatus of this invention. It is a block diagram which shows the structural example of the electric system of the reaction apparatus of FIG.

Explanation of symbols

U1... Dielectric structure 2... Base 3... Through-hole 4 ... First conductor 5. Through-hole 6 of the second conductor 7 through-holes 8 and 9 of the second conductor external terminal

Claims (11)

A dielectric having at least one through hole between the first surface and the second surface;
A first conductor provided between the first surface and the second surface of the dielectric, at least a part of which is located along an inner peripheral surface of the through hole;
A second conductor provided on the first surface of the dielectric, between the first surface and the second surface, or on the second surface, and at least a part of which is located along the through hole; Have
The through hole is intended to be to generate plasma therein, the opening area of the opening in said first surface, with not greater than the opening area of the opening in the second surface, wherein from said second surface first 1 Fluid is flowed to the surface side ,
The first conductor and the second conductor are flat conductors each having a through hole at a position corresponding to the through hole,
Wherein in the cross-sectional view of a penetrating direction of the through hole dielectric has, the through-hole side surface and the principal surface and forms a corner of the first conductor to the first conductor has the Ri perpendicular der plasma generator It is that dielectric structure used as a. Wherein when projected in a penetrating direction of the through hole dielectric having an inner peripheral surface of the portion closer to the second surface of any two locations in said through-hole in which the dielectric spaced along the penetrating direction has The dielectric structure according to claim 1, wherein the position is the same as or more inside than the position of the inner peripheral surface at a location close to the first surface. A plurality of dielectrics having at least one through hole between the first surface and the second surface;
A first conductor provided between each of the first surface and the second surface of each of the dielectrics, wherein at least a part is located along an inner peripheral surface of the through hole;
The second conductive material is provided on the first surface, between the first surface and the second surface, or on the second surface, and at least a part of the dielectric is located along the through hole. Having a body,
The plurality of dielectrics are arranged so that the first conductors and the second conductors are alternately positioned, and the through holes that are provided in the respective dielectrics and generate plasma therein communicate with each other. And
The opening area of the through hole in the first surface located at one end of each dielectric in the arrangement direction of the plurality of dielectrics is located at the other end of each dielectric in the arrangement direction. together have size than the opening area of the through hole in the second surface, each of said dielectric
Fluid flows from the second surface side of the body to the first surface side ;
The first conductor and the second conductor are flat conductors each having a through hole at a position corresponding to the through hole,
Wherein in the cross-sectional view of a penetrating direction of the through hole dielectric has, the through-hole side surface and the principal surface and forms a corner of the first conductor to the first conductor has the Ri perpendicular der plasma generator It is that dielectric structure used as a. When projected in the penetrating direction of the continuous through hole made up of the plurality of communicating through holes, one of the two positions in the continuous through hole spaced along the penetrating direction is positioned at one end in the arrangement direction. The position of the inner peripheral surface near the second surface is the same as or more inside than the position of the inner peripheral surface near the first surface located at the other end in the arrangement direction. 4. The dielectric structure according to 3 . The dielectric according to any one of claims 1 to 4 , wherein an outer edge portion of the second conductor is located inside an outer edge portion of the first conductor when projected in a penetration direction of the through hole. Structure. It said second conductors, dielectric structure according to any one of claims 1 to 5 which also has a through-hole other than a position corresponding to the through hole. A dielectric structure according to any one of claims 1 to 6 , and a first power source for applying an alternating voltage or a pulse voltage between the first conductor and the second conductor. Discharge device. The discharge device according to claim 7 , further comprising a second power source for applying a DC voltage between the first conductor and the second conductor. The discharge device according to claim 7 or 8 , a fluid supply unit for flowing a fluid from the second surface side to the first surface side through the through hole, and a dust collecting unit provided downstream of the discharge device. A fluid reforming apparatus comprising: The discharge device according to claim 7 , a fluid supply part that causes a fluid to flow from the second surface side to the first surface side through the through hole, and a side opposite to the fluid supply part with respect to the dielectric structure. Reaction system comprising: an electrode, a third power source for supplying a direct current potential between the electrode and the first conductor, and a dust collecting portion provided between the dielectric structure and the electrode . The discharge device according to claim 8 , a fluid supply unit that allows fluid to flow from the second surface side to the first surface side in the through-hole, and a side opposite to the fluid supply unit with respect to the dielectric structure. An electrode, a dust collecting portion provided between the dielectric structure and the electrode, the second power source, the first conductor and the second conductor, and the electrode and the first The reaction system provided with the switching part switched between 1 conductors.

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