JP5349664B2 - Solar cell module and method for manufacturing solar cell module - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solar battery cell, the solar battery cell with wiring, a solar battery module, and a method for manufacturing the solar battery cell with the wiring which can stably suppress reduction in characteristics due to ionic migration. <P>SOLUTION: A solar battery cell, the solar battery cell with wiring, a solar battery module, and a method for manufacturing the solar battery cell with the wiring comprise: a substrate; a first electrode provided on one-face side of the substrate; and a first coating layer that covers a surface of the first electrode. The first coating layer is made of material that causes less ionic migration than metallic material constituting the first electrode. <P>COPYRIGHT: (C)2013,JPO&amp;INPIT

Description

The present invention relates to a method of manufacturing a solar cell module Contact and solar cell module.

In recent years, development of clean energy has been demanded due to problems of depletion of energy resources and global environmental problems such as an increase in CO _{2 in} the atmosphere. In particular, solar power generation using solar cells is a new energy source. It has been developed, put into practical use, and is on the path of development.

  Conventionally, a solar cell has formed a pn junction by diffusing an impurity having a conductivity type opposite to that of a silicon substrate into a light receiving surface of a monocrystalline or polycrystalline silicon substrate, for example, Double-sided electrode type solar cells manufactured by forming electrodes on the back surface opposite to the light receiving surface are mainly used. In a double-sided electrode type solar cell, it is also common to increase the output by the back surface field effect by diffusing impurities of the same conductivity type as the silicon substrate at a high concentration on the back surface of the silicon substrate. .

  Research and development is also underway for a back electrode type solar cell (for example, see Patent Document 1) in which an electrode is not formed on the light receiving surface of a silicon substrate and an n electrode and a p electrode are formed only on the back surface of the silicon substrate. . In such a back electrode type solar cell, since it is not necessary to form an electrode that blocks incident light on the light receiving surface of the silicon substrate, an improvement in conversion efficiency of the solar cell is expected. In addition, technical development of a solar cell with a wiring sheet in which the electrode of the back electrode type solar cell is connected to the wiring of the wiring sheet is also in progress.

JP 2006-332273 A

  A metal material is usually used for the electrode of the back electrode type solar cell and the wiring of the wiring sheet, but the metal material has an ion migration property that a metal material ionized by an electric field is deposited along the electric field direction. doing. The ease with which this ion migration occurs depends on the type of metal material and the electric field strength of the electric field when the ambient temperature and humidity are the same.

  It has also been found that there is a close relationship between the interelectrode pitch between the p electrode and the n electrode and the conversion efficiency, and the conversion efficiency tends to increase as the interelectrode pitch decreases. On the other hand, when the pitch between the electrodes is narrowed, the electric field strength of the electric field generated between the electrodes increases, so that the ion migration is promoted, and the needle-like substance formed from the metal ions precipitated by the ion migration is used between the electrodes. There is a risk that the conversion efficiency may decrease due to short-circuiting.

In view of the above circumstances, an object of the present invention is to provide a method for producing a stable Ru can be suppressed by solar cell modules contact and solar cell modules deterioration of characteristics due to ion migration .

The present invention relates to a substrate, a back electrode type solar cell provided with a first electrode and a second electrode having different polarities provided on one surface side of the substrate, and electrically connected to the first electrode. A first wiring member, a second wiring member electrically connected to the second electrode, a first covering layer covering at least part of the surface of the first electrode, and a second of the second wiring the solar cell with the Ru and a coating layer covering at least part of the surface of the electrode, a sealed solar cell module with a sealing material, the first coating layer a first The second coating layer is made of a material that is less likely to cause ion migration than the metal material that constitutes the second electrode, and the second coating layer is made of a material that is less likely to cause ion migration than the metal material that constitutes the electrode. 2 electrodes are arranged next to each other, and the first electrode Insulating material having a so as to contact the back surface of back electrode type solar cell between a second electrode adjacent to the first electrode, the ion migration suppressing function of a different material than the sealing member Is disposed, the first coating layer is interposed between the first electrode and the insulating material in contact with the back surface of the back electrode type solar cell, and the second coating layer is insulated from the second electrode. a solar cell module that are interposed in contact with the back surface of back electrode type solar cell with the sexual material.

Furthermore, the present invention includes a back electrode type solar cell which is disposed a second electrode of different polarity to the first electrode and the first electrode adjacent to each other on one surface of the base plate, next to one another A method of manufacturing a solar cell module in which a solar cell with wiring provided with a matching first wiring member and second wiring member is sealed with a sealing material, the first electrode and the first Installing at least one of the second electrode and the second wiring member a step of installing a first covering member made of a material that is less likely to cause ion migration than the metal material constituting the first electrode on at least one of the wiring members; A step of installing a second covering member made of a material that is less likely to cause ion migration than the metal material constituting the second electrode; and the first covering member is heated and melted and then solidified. The step of covering the surface of the first electrode with the formed first coating layer and electrically connecting the first electrode and the first wiring member; and heating and melting the second coating member Covering the surface of the second electrode with a second coating layer formed by solidification and electrically connecting the second electrode and the second wiring member, and further comprising: An insulating material is disposed between the electrode and the second electrode adjacent to the first electrode so as to be in contact with the back surface of the back electrode type solar cell, and the first covering layer is insulated from the first electrode. The second coating layer is in contact with the back surface of the back electrode type solar battery cell between the second electrode and the insulating material. and so as to intervene in, a resin composition different from the sealant ion migration resistant machine Cured to the process and the insulating resin composition to place an insulating resin composition having comprising the step of the insulating material, a method of manufacturing a solar cell module.

According to the present invention can provide a method for producing a stable Ru can be suppressed by solar cell modules contact and solar cell modules deterioration of characteristics caused by ion migration.

3 is a schematic cross-sectional view of the solar battery cell according to Embodiment 1. FIG. It is a figure which shows the relative value of the ion migration sensitivity of various kinds of materials. (A)-(e) is typical sectional drawing illustrated about an example of the manufacturing method of the photovoltaic cell of Embodiment 1. FIG. (A) And (b) is typical sectional drawing illustrating an example of the manufacturing method of the photovoltaic cell with wiring of Embodiment 2. FIG. 6 is a schematic cross-sectional view of a solar cell module according to Embodiment 2. FIG. FIG. 6 is a schematic cross-sectional view of a modification of the solar cell with wiring of the second embodiment. 6 is a schematic cross-sectional view of a modification of the solar cell module according to Embodiment 2. FIG. (A)-(d) is typical sectional drawing illustrated about an example of the manufacturing method of a wiring sheet. FIG. 10 is a schematic cross-sectional view of still another modification of the solar cell with wiring of the second embodiment. 10 is a schematic cross-sectional view of still another modification of the solar cell module according to Embodiment 2. FIG. 6 is a schematic cross-sectional view of a solar cell with wiring according to Embodiment 3. FIG. 6 is a schematic cross-sectional view of a solar cell module according to Embodiment 3. FIG. FIG. 10 is a schematic cross-sectional view of a modification of the solar cell with wiring of the third embodiment. 6 is a schematic cross-sectional view of a modification of the solar cell module according to Embodiment 3. FIG.

  Embodiments of the present invention will be described below. In the drawings of the present invention, the same reference numerals represent the same or corresponding parts.

<Embodiment 1>
In FIG. 1, typical sectional drawing of the photovoltaic cell of Embodiment 1 which is an example of the photovoltaic cell of this invention is shown. Here, in the solar cell of the first embodiment, as shown in FIG. 1, the n-type electrode 6 and the p-type electrode 7 having different polarities (negative electrode and positive electrode) are provided on one surface side of the substrate 1. Each is a back electrode type solar cell provided.

  Solar cell 8 shown in FIG. 1 includes substrate 1, n-type impurity diffusion region 2 and p-type impurity diffusion region 3 formed on one surface (back surface) side of substrate 1, and n-type impurity diffusion region 2. It has an n-type electrode 6 formed so as to be in contact with it and a p-type electrode 7 formed so as to be in contact with the p-type impurity diffusion region 3.

  The n-type impurity diffusion region 2 and the p-type impurity diffusion region 3 are each formed in a strip shape extending to the front surface side and / or the back surface side of FIG. Are arranged at predetermined intervals on the back surface of the substrate 1.

  The n-type electrode 6 and the p-type electrode 7 are also formed in strips extending to the front side and / or the back side of the sheet of FIG. 1, respectively. The n-type electrode 6 and the p-type electrode 7 are respectively n-type impurities. It is formed along diffusion region 2 and p-type impurity diffusion region 3.

  The surface of the n-type electrode 6 is covered with a coating layer 66, and the surface of the p-type electrode 7 is covered with a coating layer 67. Here, the coating layer 66 is made of a material that is less likely to cause ion migration than the metal material that constitutes the n-type electrode 6, and the coating layer 67 is more ion migration than the metal material that constitutes the p-type electrode 7. Constructed from materials that are unlikely to occur.

  An uneven structure such as a texture structure is formed on the light receiving surface of the substrate 1, and an antireflection film 5 is formed so as to cover the uneven structure. For example, a passivation film may be formed on the back surface of the substrate 1.

  In the solar cell of the first embodiment, the surface of the n-type electrode 6 is covered with a coating layer 66 made of a material that is less likely to cause ion migration than the metal material that constitutes the n-type electrode 6. The surface of the p-type electrode 7 is covered with a coating layer 67 made of a material that is less likely to cause ion migration than the metal material constituting the p-type electrode 7. Thereby, the electrical connection between the n-type electrode 6 and the p-type electrode 7 due to the needle-like substance generated from the respective surfaces of the n-type electrode 6 and the p-type electrode 7 due to ion migration. It is possible to suppress the deterioration of the characteristics of the solar battery cell due to the occurrence of a short circuit or the like.

  The covering layer 66 only needs to cover at least part of the surface of the n-type electrode 6, and the covering layer 67 only needs to cover at least part of the surface of the p-type electrode 7. From the viewpoint of stably suppressing the resulting deterioration of the characteristics of the solar battery cell, the covering layer 66 covers the entire surface of the n-type electrode 6 and the covering layer 67 covers the entire surface of the p-type electrode 7. It is preferable.

  Each of the covering layer 66 and the covering layer 67 is preferably made of a conductive material. When the covering layer 66 and the covering layer 67 are made of a conductive material, the surfaces of the n-type electrode 6 and the p-type electrode 7 are covered with the covering layer 66 and the covering layer 67 made of a conductive material having the same potential. As a result, it is possible to suppress the generation of electric fields on the surfaces of the n-type electrode 6 and the p-type electrode 7. Thereby, since it can suppress that a metal ion precipitates by ion migration from each of the electrode 6 for n-types, and the electrode 7 for p-types, the fall of the characteristic of the photovoltaic cell resulting from ion migration is stabilized. Can be suppressed.

  Each of the covering layer 66 and the covering layer 67 may be made of an insulating material. However, when the covering layer 66 and the covering layer 67 are made of an insulating material, metal ions precipitated by ion migration from the n-type electrode 6 and the p-type electrode 7 are applied to the covering layer 66 and the covering layer 67, respectively. A material that can be prevented from entering is preferable. Thereby, since the penetration of the metal ions deposited by ion migration from the n-type electrode 6 and the p-type electrode 7 into the coating layer 66 and the coating layer 67 can be stopped by the coating layer 66 and the coating layer 67, A decrease in the characteristics of the solar battery cell due to ion migration can be stably suppressed. In addition, as a material which can suppress the penetration | invasion of the metal ion deposited by ion migration, the material with a low content rate of a halogen ion etc. can be mentioned, for example.

  FIG. 2 shows the relative values of ion migration sensitivity of various types of materials. FIG. 2 is a diagram showing relative values of ion migration sensitivities of various types of metal materials when the ion migration sensitivity of silver (Solid Ag (foil)) is taken as 100. FIG. The vertical axis in FIG. 2 shows various types of materials, and the horizontal axis in FIG. 2 shows the relative value of ion migration sensitivity of each material on the vertical axis. 2 is based on the description on page 3 of “Corrosion Center News No. 017” (September 1, 1998) edited by the Corrosion and Corrosion Protection Association. Further, the horizontal axis in FIG. 2 is a logarithmic axis.

  For example, when the n-type electrode 6 and the p-type electrode 7 are each made of silver, the ion migration sensitivity of the metal material constituting the n-type electrode 6 and the p-type electrode 7 is shown in FIG. The relative value is 100. In this case, as a material constituting the covering layer 66 and the covering layer 67, for example, a material having a relative value of ion migration sensitivity lower than 100 (see FIG. 2) can be used.

  Hereinafter, an example of the method for manufacturing the solar cell according to the first embodiment will be described with reference to the schematic cross-sectional views of FIGS. 3 (a) to 3 (e).

  First, as shown in FIG. 3A, a substrate 1 having a slice damage 1a formed on the surface of the substrate 1 is prepared by, for example, slicing from an ingot. Here, as the substrate 1, for example, a silicon substrate such as polycrystalline silicon or single crystal silicon having either n-type or p-type conductivity can be used.

  Next, as shown in FIG. 3B, the slice damage 1a on the surface of the substrate 1 is removed. Here, the removal of the slice damage 1a is performed, for example, when the substrate 1 is made of the above silicon substrate, the surface of the silicon substrate after the above slicing is mixed with an aqueous solution of hydrogen fluoride and nitric acid or an alkali such as sodium hydroxide. It can be performed by etching with an aqueous solution or the like. The size and shape of the substrate 1 after removal of the slice damage 1a are not particularly limited, but for example, the substrate 1 having a thickness of 100 μm or more and 500 μm or less can be used.

  Next, as shown in FIG. 3C, an n-type impurity diffusion region 2 and a p-type impurity diffusion region 3 are formed on the back surface of the substrate 1, respectively. Here, the n-type impurity diffusion region 2 can be formed by, for example, a method such as vapor phase diffusion using a gas containing n-type impurities or coating diffusion in which a heat treatment is applied after applying a paste containing n-type impurities. The p-type impurity diffusion region 3 can be formed, for example, by a method such as vapor phase diffusion using a gas containing p-type impurities or coating diffusion in which a heat treatment is applied after applying a paste containing p-type impurities.

As the gas containing an n-type impurity, a gas containing an n-type impurity such as phosphorus such as POCl ₃ can be used. As the gas containing a p-type impurity, a p-type such as boron such as BBr ₃ is used. A gas containing impurities can be used.

  The n-type impurity diffusion region 2 is not particularly limited as long as it includes an n-type impurity and exhibits n-type conductivity. As the n-type impurity, for example, phosphorus or the like can be used.

  The p-type impurity diffusion region 3 is not particularly limited as long as it includes a p-type impurity and exhibits p-type conductivity. As the p-type impurity, for example, boron and / or aluminum can be used.

A passivation film may be formed on the back surface of the substrate 1 after the n-type impurity diffusion region 2 and the p-type impurity diffusion region 3 are formed. The passivation film is formed by, for example, forming a silicon nitride film, a silicon oxide film, or a stacked body of a silicon nitride film and a silicon oxide film by a method such as a thermal oxidation method or a plasma CVD (Chemical Vapor Deposition) method. Can be produced. The thickness of the passivation film can be, for example, 0.05 μm or more and 1 μm or less.

  Next, as shown in FIG. 3D, after forming an uneven structure such as a texture structure on the entire light receiving surface of the substrate 1, an antireflection film 5 is formed on the uneven structure.

  Here, the texture structure can be formed, for example, by etching the light receiving surface of the substrate 1. For example, when the substrate 1 is a silicon substrate, for example, the substrate 1 is used by using an etching solution obtained by heating a solution obtained by adding isopropyl alcohol to an alkaline aqueous solution such as sodium hydroxide or potassium hydroxide to 70 ° C. or more and 80 ° C. or less. It can be formed by etching the light receiving surface.

  The antireflection film 5 can be formed by, for example, a plasma CVD method. As the antireflection film 5, for example, a silicon nitride film or the like can be used, but is not limited thereto.

  When a passivation film is formed on the back surface of the substrate 1, at least a part of the surface of the n-type impurity diffusion region 2 and the surface of the p-type impurity diffusion region 3 are removed by removing a part of the passivation film on the back surface of the substrate 1. A contact hole that exposes at least a part of each may be formed.

  The contact hole is formed by, for example, forming a resist pattern having an opening on a portion corresponding to a contact hole formation portion on the passivation film using a photolithography technique, and then removing the passivation film from the opening of the resist pattern by etching or the like, Alternatively, it can be formed by, for example, a method of etching and removing the passivation film by applying an etching paste to the portion of the passivation film corresponding to the contact hole forming portion and then heating.

  Next, as shown in FIG. 3E, an n-type electrode 6 in contact with the n-type impurity diffusion region 2 on the back surface of the semiconductor substrate 1 is formed, and a p-type electrode 7 in contact with the p-type impurity diffusion region 3 is formed. Form.

  Each of the n-type electrode 6 and the p-type electrode 7 is formed by, for example, applying a silver paste so as to be in contact with each of the n-type impurity diffusion region 2 and the p-type impurity diffusion region 3 and then baking the silver paste. be able to. Thereby, each of the n-type electrode 6 and the p-type electrode 7 can be an electrode containing silver at least on the surface thereof. Needless to say, each of the n-type electrode 6 and the p-type electrode 7 may not be an electrode containing silver at least on the surface thereof.

  Thereafter, a coating layer 66 is formed on the surface of the n-type electrode 6 and a coating layer 67 is formed on the surface of the p-type electrode 7. The method for forming the coating layer 66 and the coating layer 67 is not particularly limited as long as it is a method capable of covering at least part of the surface of the n-type electrode 6 and at least part of the surface of the p-type electrode 7. Not. As described above, the solar battery cell of the first embodiment can be manufactured.

  It should be noted that the concept of the back electrode type solar cell in the present invention only has a configuration in which both the n-type electrode and the p-type electrode are formed only on one surface side (back surface side) of the substrate described above. And so-called back contact type solar cells (opposite to the light receiving surface side of the solar cells) such as MWT (Metal Wrap Through) cells (solar cells having a part of electrodes arranged in through holes provided on the substrate) All of the solar cells having a structure in which current is taken out from the back side of the side.

<Embodiment 2>
The solar cell with wiring of the second embodiment is characterized in that a plurality of the solar cells 8 of the first embodiment are electrically connected by a wiring member.

  Hereinafter, an example of the method for manufacturing the solar cell with wiring according to the second embodiment will be described with reference to the schematic cross-sectional views of FIGS. 4 (a) and 4 (b). First, as shown in FIG. 4A, the solar cells 8 of the first embodiment are arranged above the surfaces of the n-type wiring member 12 and the p-type wiring member 13, respectively. Here, in the solar cell 8 of the first embodiment, the n-type electrode 6 is located above the surface of the n-type wiring member 12, and the p-type electrode 7 is located above the surface of the p-type wiring member 13. To be arranged.

  The n-type wiring member 12 and the p-type wiring member 13 are not particularly limited as long as each is a wiring member made of a conductive material, but the conductive material constituting the n-type wiring member 12 and the p-type wiring member 13 is It is preferable that the material is less likely to cause ion migration than the metal materials constituting the n-type electrode 6 and the p-type electrode 7 respectively. For example, when the metal material constituting the n-type electrode 6 and the p-type electrode 7 is silver, the n-type wiring member 12 and the p-type wiring member 13 are less susceptible to ion migration than silver. Copper or the like can be suitably used (see FIG. 2).

  Further, the n-type wiring member 12 and the p-type wiring member 13 are shaped so that the n-type wiring member 12 and the p-type wiring member 13 are electrically connected to the n-type electrode 6 and the p-type electrode 7, respectively. The shape is not particularly limited as long as it can be formed. For example, as described later, the width D1 of the n-type wiring member 12 is wider than the width d1 of the n-type electrode 6 and the width D2 of the p-type wiring member 13 is p-type. It is preferable that the electrode 7 has a shape wider than the width d2.

  When there are a plurality of n-type electrodes 6 and a plurality of p-type electrodes 7, a plurality of n-type wiring members 12 and a plurality of p-type wiring members 13 may also be present in shapes corresponding to these electrodes. . The n-type wiring member 12 and the p-type wiring member 13 electrically connect the plurality of n-type wiring members 12 and the plurality of p-type wiring members 13 to each other. A wiring member or the like may be provided. Further, the n-type wiring member 12 and the p-type wiring member 13 may include a wiring member for electrically connecting the plurality of solar battery cells 8.

  In the present embodiment, the n-type wiring member 12 and the p-type wiring member 13 are each formed in a strip shape extending to the front side and / or the back side of the paper surface of FIG. Therefore, the surface of the n-type wiring member 12 faces the surface of the covering layer 66 made of a conductive material covering the surface of the n-type electrode 6 along the normal direction of the paper surface of FIG. The surface of the wiring member 13 faces the surface of the covering layer 67 made of a conductive material that covers the surface of the p-type electrode 7.

  The width D1 of the n-type wiring member 12 is wider than the width d1 of the n-type electrode 6, and the width D2 of the p-type wiring member 13 is wider than the width d2 of the p-type electrode 7. . The width d1 of the n-type electrode 6, the width d2 of the p-type electrode 7, the width D1 of the n-type wiring member 12, and the width D2 of the p-type wiring member 13 are respectively in the extending direction (the paper surface of FIG. 4). This corresponds to the length in the direction perpendicular to the normal direction) (the left-right direction in FIG. 4).

  The width d1 of the n-type electrode 6 and the width d2 of the p-type electrode 7 can be set to, for example, 100 μm or more and 300 μm or less. Further, the thickness of the n-type electrode 6 and the thickness of the p-type electrode 7 can be set to, for example, 5 μm or more and 15 μm or less, respectively. The width d1 of the n-type electrode 6 and the width d2 of the p-type electrode 7 do not necessarily have the same value, and the thickness of the n-type electrode 6 and the thickness of the p-type electrode 7 are not necessarily the same. It does not have to be the same value.

  The width D1 of the n-type wiring member 12 and the width D2 of the p-type wiring member 13 can be set to 300 μm or more and 600 μm or less, respectively. Moreover, the thickness of the n-type wiring member 12 and the thickness of the p-type wiring member 13 can be, for example, 10 μm or more and 50 μm or less. The width D1 of the n-type wiring member 12 and the width D2 of the p-type wiring member 13 do not necessarily have the same value. The thickness of the n-type wiring member 12 and the width of the p-type wiring member 13 are not necessarily the same. The thicknesses are not necessarily the same value.

  Next, a coating layer 66 covering the surface of the n-type electrode 6 is provided so as to be in contact with the surface of the n-type wiring member 12, and the surface of the p-type electrode 7 is in contact with the surface of the p-type wiring member 13. A covering layer 67 is installed to cover. Thereafter, the coating layers 66 and 67 are heated and melted, respectively, and then solidified. As a result, the coating layers 66 and 67 are once melted and spread to the respective surfaces of the n-type wiring member 12 and the p-type wiring member 13, and then solidify in a shape that has been wetted and spread by cooling or the like. Then, as shown in FIG. 4B, the n-type electrode 6 and the p-type electrode 7 are respectively made of the n-type wiring member 12 and the p-type wiring by the covering layers 66 and 67 solidified in a wet and spread shape. Bonding with the member 13 forms an electrical connection. As described above, the solar cell with wiring according to the second embodiment can be manufactured.

  As described above, the width D1 of the n-type wiring member 12 is larger than the width d1 of the n-type electrode 6, and the width D2 of the p-type wiring member 13 is larger than the width d2 of the p-type electrode 7. Is also getting wider. Therefore, since the molten coating layers 66 and 67 are sufficiently wet and spread on the respective surfaces of the n-type wiring member 12 and the p-type wiring member 13, the solidified coating layers 66 and 67 become the n-type electrode 6 and Each surface of the p-type electrode 7 can be covered.

  That is, the coating layers 66 and 67 are preferably made of a brazing material or a conductive adhesive that melts by heating. In particular, from the viewpoint of electrical connection between the n-type electrode 6 and the n-type wiring member 12 and electrical connection between the p-type electrode 7 and the p-type wiring member 13, the coating layers 66 and 67. Is preferably made of a conductive material. The melting points of the covering layers 66 and 67 made of brazing material or conductive adhesive are the melting points of the electrodes (n-type electrode 6 and p-type electrode 7) and the wiring members (n-type wiring member 12 and p-type). The melting point of the wiring member 13) is preferably lower. In this case, since the coating layers 66 and 67 can be melted without changing the shape of the electrodes and wiring members, the coating layers 66 and 67 tend to easily cover the surfaces of the electrodes and wiring members. It is in.

  Further, when the metal material constituting the electrodes (the n-type electrode 6 and the p-type electrode 7) is silver, it is preferable to use solder that is a tin alloy as the coating layers 66 and 67. In this case, in addition to the above-described effect due to the covering layers 66 and 67 being made of a conductive material, a voltage drop at the connection portion between the electrode and the wiring member can be reduced. The output power can be improved.

  In addition, in the above, the case where the photovoltaic cell 8 of Embodiment 1 in which the coating layer 66 and the coating layer 67 are installed on the surfaces of the n-type electrode 6 and the p-type electrode 7 has been described. However, the covering layer 66 and the covering layer 67 may be provided only on the surface of the wiring member (n-type wiring member 12, p-type wiring member 13), and electrodes (n-type electrode 6, p-type electrode). 7) and wiring members (n-type wiring member 12, p-type wiring member 13) may be provided on the respective surfaces. The covering layer 66 and the covering layer 67 are not limited to the surface of the electrodes (the n-type electrode 6 and the p-type electrode 7), and may be disposed on the side surfaces of the electrodes or on the back surface of the semiconductor substrate 1 near the electrodes. .

  Moreover, although the case where the photovoltaic cell 8 of Embodiment 1 was used was demonstrated in the above, the photovoltaic cell with wiring of Embodiment 2 is a metal material which comprises an electrode in at least one of an electrode and a wiring member A step of installing a covering member made of a material that is less likely to cause ion migration, and covering the surface of the electrode with a covering layer formed by heating and melting the covering member and then solidifying the electrode and the wiring member It can also be manufactured by a method including a step of electrical connection. The covering member becomes a covering layer that covers the electrode surface by solidifying after wetting and spreading on the surface of the wiring member by melting by heating.

  If a coating layer covering the electrode surface can be formed by wetting and spreading on the surface of the wiring member by melting by heating, the coating member is installed only on the side of the electrode, for example, without installing the coating member on the electrode surface can do. Thereby, even when the electrode needs to be in direct contact with the wiring member because the covering member is made of an insulating material or has a high electric resistance, the covering layer can be installed.

  Here, the covering member is preferably made of a brazing material or a conductive adhesive having a melting point lower than the melting points of the metal material and the wiring member constituting the electrode. The melting point of the covering member made of brazing material or conductive adhesive is the melting point of the electrodes (n-type electrode 6 and p-type electrode 7) and the wiring members (n-type wiring member 12 and p-type wiring member 13). The melting point is preferably lower than the melting point. In this case, since the covering member can be melted without changing the shape of the electrode or the wiring member, the covering member tends to easily cover the surface of the electrode or the wiring member.

  Also in this method, the width of the wiring member is preferably wider than the width of the electrode. In this case, the tendency that the covering member can cover the surface of the electrode without protruding from the surface of the wiring member due to melting of the covering member by heating increases.

  Then, for example, as shown in the schematic cross-sectional view of FIG. 5, by sealing the solar cell with wiring of the second embodiment in the sealing material 18 between the transparent substrate 17 and the back surface protective material 19, The solar cell module of Embodiment 2 can be manufactured.

  Here, as the transparent substrate 17, a substrate capable of transmitting light incident on the solar cell module such as a glass substrate can be used. As the sealing material 18, resin etc. which can permeate | transmit the light which injects into solar cell modules, such as ethylene vinyl acetate, for example can be used. As the back surface protective material 19, a member capable of protecting a solar cell with wiring, such as a polyester film, can be used.

  FIG. 6 shows a schematic cross-sectional view of a modified example of the solar cell with wiring of the second embodiment, and FIG. 7 shows a schematic cross-sectional view of a modified example of the solar cell module of the second embodiment. In the solar cell with wiring shown in FIG. 6 and the solar battery module shown in FIG. 7, the wiring in which the n-type wiring member 12 and the p-type wiring member 13 are installed on the surface of the insulating substrate 11. The sheet 10 is characterized in that a plurality of solar cells 8 are electrically connected in series. When such a wiring sheet 10 is used, it is preferable in that an electrical connection between a large number of electrodes and a wiring member can be easily and reliably performed.

  Hereinafter, an example of a method for manufacturing the wiring sheet 10 will be described with reference to the schematic cross-sectional views of FIGS. 8 (a) to 8 (d).

  First, as shown in FIG. 8A, a conductive layer 41 made of a conductive material is formed on the surface of the insulating substrate 11.

  Here, as the insulating base material 11, for example, a substrate made of a resin such as polyester, polyethylene naphthalate, or polyimide can be used, but is not limited thereto. The thickness of the insulating base material 11 can be, for example, 10 μm or more and 200 μm or less.

  Next, as shown in FIG. 8B, a resist 42 is formed on the conductive layer 41 on the surface of the insulating substrate 11.

  Here, the resist 42 is formed in a shape having an opening at a place other than the place where the wiring member of the wiring sheet 10 such as the n-type wiring member 12 and the p-type wiring member 13 is left. As the resist 42, for example, a conventionally known one can be used. For example, a resist obtained by curing a resin applied at a predetermined position by a method such as screen printing, dispenser application, or ink jet application can be used.

  Next, as shown in FIG. 8C, the conductive layer 41 is patterned by removing the conductive layer 41 exposed from the resist 42 in the direction of the arrow 43, and from the remainder of the conductive layer 41. Wiring members of the wiring sheet 10 such as the n-type wiring member 12 and the p-type wiring member 13 are formed.

  Here, the removal of the conductive layer 41 can be performed, for example, by wet etching using an acid or alkali solution.

  Next, as shown in FIG. 8D, the resist 42 is completely removed from the surface of the n-type wiring member 12 and the surface of the p-type wiring member 13. Thereby, the wiring sheet 10 in which the n-type wiring member 12 and the p-type wiring member 13 are formed on the insulating substrate 11 is produced. In addition to the n-type wiring member 12 and the p-type wiring member 13, for example, a wiring that electrically connects a plurality of n-type wiring members 12 to each other as the wiring member formed on the insulating substrate 11. A member, a wiring member for electrically connecting the plurality of p-type wiring members 13, a wiring member for electrically connecting the plurality of solar cells 8, and the like may be formed.

  FIG. 9 shows a schematic cross-sectional view of still another modification of the solar cell with wiring of the second embodiment, and FIG. 10 shows a schematic cross-section of still another modification of the solar battery module of the second embodiment. The figure is shown. In the solar cell with wiring shown in FIG. 9 and the solar cell module shown in FIG. 10, an insulating material 16 is disposed between the substrate 1 and the insulating base 11, and the solar cell 8 and the wiring are connected. The sheet 10 is characterized in that it is joined by an insulating material 16.

  Here, the insulating material 16 is not particularly limited as long as it is an insulating material. For example, as the resin component, an electrically containing epoxy resin, an acrylic resin, or a mixed resin of an epoxy resin and an acrylic resin is used. An insulating thermosetting and / or photocurable resin composition can be used. The insulating material 16 may contain one or more conventionally known additives such as a curing agent as a component other than the resin component.

  As the insulating material 16, it is preferable to use a material that prevents intrusion of metal ions deposited by ion migration, such as an insulating material having a low halogen ion content that promotes ion migration. In this case, the deterioration of the characteristics of the solar cell with wiring and the solar cell module due to ion migration can be stably suppressed.

  Insulating material 16 is preferably an insulating adhesive. In this case, since the solar cell 8 and the wiring sheet 10 can be more firmly bonded by the insulating material 16, the mechanical strength of the solar cell with wiring and the solar cell module can be improved. In addition, since the intrusion of moisture into the region between the n-type electrode 6 and the p-type electrode 7 can be suppressed, the tendency to further suppress the occurrence of ion migration is increased.

  In addition, the photovoltaic cell with wiring shown in FIG. 9 and the solar cell module shown in FIG. 10 are the solar cell 8 after applying the insulating material 16 to at least one of the solar cell 8 and the wiring sheet 10, respectively. It can be manufactured by bonding the wiring sheet 10 together.

  As described above, also in the solar cell with wiring and the solar cell module of the second embodiment shown in FIGS. 4 to 7 and FIGS. 9 to 10, the surface of the n-type electrode 6 is replaced with the n-type electrode 6. The surface of the p-type electrode 7 is less likely to cause ion migration than the metal material constituting the p-type electrode 7 because the surface of the p-type electrode 7 is covered with a coating layer 66 made of a material that is less likely to cause ion migration than the constituent metal material. It is covered with a covering layer 67 made of a material. Therefore, an electrical short circuit between the n-type electrode 6 and the p-type electrode 7 due to needle-like substances generated from the respective surfaces of the n-type electrode 6 and the p-type electrode 7 due to ion migration. It is possible to suppress the deterioration of characteristics due to the occurrence of the above.

  Further, in the solar cell with wiring and the solar cell module according to Embodiment 2 shown in FIGS. 4 to 7 and 9 to 10, the n-type electrode 6 and the p-type electrode 7 are arranged adjacent to each other. The covering layer 66 covers at least part of the surface of the n-type electrode 6 adjacent to the p-type electrode 7, and the covering layer 67 is adjacent to the n-type electrode 6 of the p-type electrode 7. It is preferable to cover at least part of the surface. In this case, of the respective surfaces of the n-type electrode 6 and the p-type electrode 7, at least one of the surfaces corresponding to the portion where the distance between the n-type electrode 6 and the p-type electrode 7 is shortened. The portions tend to be covered with the covering layers 66 and 67, respectively. For this reason, there is a large tendency that the deterioration of characteristics due to the occurrence of an electrical short circuit between the n-type electrode 6 and the p-type electrode 7 due to the acicular material generated due to ion migration can be suppressed. Become.

  Since the description other than the above in the present embodiment is the same as that in the first embodiment, the description thereof is omitted here.

<Embodiment 3>
FIG. 11 shows a schematic cross-sectional view of a solar cell with wiring according to Embodiment 3, which is still another example of the solar cell with wiring according to the present invention, and FIG. 12 shows still another solar cell module according to the present invention. The typical sectional view of the solar cell module of Embodiment 3 which is an example is shown.

  In the solar cell with wiring and the solar cell module of Embodiment 3, the n-type electrode 6 and the n-type wiring member 12 are arranged to face each other, and the p-type electrode 7 and the p-type wiring member 13 are arranged. Are placed facing each other. The n-type wiring member 12 and the p-type wiring member 13 are arranged adjacent to each other, and the covering layer 66 is formed on the surface p of the n-type wiring member 12 connected to the n-type electrode 6. A portion of the corner 12b at the end adjacent to the mold wiring member 13 is covered, and the covering layer 67 is n-type on the surface of the p-type wiring member 13 connected to the p-type electrode 7. A portion of the corner 13b at the end on the side adjacent to the wiring member 12 is covered.

  Here, the corner portion includes not only a so-called apex angle but also a so-called side portion formed by bending a surface. In the example shown in FIG. 11, the corner portion 12 b of the n-type wiring member 12 has the surface of the n-type wiring member 12 facing the n-type electrode 6 and the n-type wiring member 13 facing the p-type wiring member 13. This corresponds to the line of intersection with the side surface 12 a of the wiring member 12. Further, the corner portion 13 b of the p-type wiring member 13 includes a surface of the p-type wiring member 13 that faces the p-type electrode 7 and a side surface 13 a of the p-type wiring member 13 that faces the n-type wiring member 12. Is equivalent to the line of intersection.

  FIG. 13 shows a schematic cross-sectional view of a modification of the solar cell with wiring of Embodiment 3, which is still another example of the solar cell with wiring of the present invention, and FIG. 14 shows the solar cell module of the present invention. Furthermore, the typical sectional drawing of the modification of the solar cell module of Embodiment 3 which is another example is shown.

  Also in the modification of the solar cell with wiring and the modification of the solar battery module of Embodiment 3, the n-type wiring member 12 and the p-type wiring member 13 are arranged adjacent to each other, and the covering layer 66 is The surface of the n-type wiring member 12 connected to the n-type electrode 6 covers the entire corner 12b at the end adjacent to the p-type wiring member 13, and the covering layer 67 is formed of p All of the corners 13b at the end of the p-type wiring member 13 connected to the mold electrode 7 on the side adjacent to the n-type wiring member 12 are covered.

  In general, it is known that the electric field generated between two planes is concentrated at the corners to increase the electric field strength. However, as in this embodiment, the conductive material The n-type wiring member 12 and the p-type wiring member 13 are prevented from being exposed to the electric fields at the corners 12b and 13b of the n-type wiring member 12 and the p-type wiring member 13 by the covering layers 66 and 67 made of It can suppress that ion migration is accelerated | stimulated in each corner | angular part 12b, 13b.

  Therefore, in the solar cell with wiring and the solar cell module shown in FIGS. 11 to 14, the occurrence of ion migration in each of the n-type wiring member 12 and the p-type wiring member 13 can be suppressed. The deterioration of the characteristics of the solar cell with wiring and the solar cell module due to migration can be suppressed.

  The covering layer 66 is preferably made of a material that is less likely to cause ion migration than the material forming the n-type wiring member 12. In this case, since it is possible to further suppress the occurrence of ion migration at the contact portion of the n-type wiring member 12 with the coating layer 66, the characteristics of the solar cell with wiring and the solar cell module resulting from ion migration can be reduced. The tendency to be able to suppress the decrease stably increases.

  The covering layer 67 is preferably made of a material that is less likely to cause ion migration than the material constituting the p-type wiring member 13. In this case, since the occurrence of ion migration at the contact portion of the p-type wiring member 13 with the coating layer 67 can be suppressed, the characteristics of the solar cell with wiring and the solar cell module due to ion migration are deteriorated. The tendency that can be suppressed stably increases.

  Since the description other than the above in the present embodiment is the same as that in the first embodiment and the second embodiment, the description thereof is omitted here.

  The embodiment disclosed this time should be considered as illustrative in all points and not restrictive. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

The present invention can be utilized in the method of manufacturing a solar cell module Contact and solar cell module.

  1 substrate, 1a slice damage, 2 n-type impurity diffusion region, 3 p-type impurity diffusion region, 5 antireflection film, 6 n-type electrode, 7 p-type electrode, 8 solar cell, 10 wiring sheet, 11 insulating property Base material, 12 n-type wiring member, 13 p-type wiring member, 12a, 13a side surface, 12b, 13b corner, 16 insulating material, 17 transparent substrate, 18 sealing material, 19 back surface protective material, 41 conductive layer , 42 resist, 43 arrow, 66, 67 coating layer.

Claims (2)

A substrate, a back electrode type solar cell provided with a first electrode and a second electrode having different polarities provided on one surface of the substrate, and electrically connected to the first electrode A first wiring member, a second wiring member electrically connected to the second electrode, a first covering layer covering at least part of the surface of the first electrode, and the first second wiring the solar cell with the Ru and a coating layer covering at least a portion of a surface of the second electrode, a solar cell module which is sealed with a sealing material,
The first coating layer is made of a material that is less likely to cause ion migration than the metal material constituting the first electrode.
The second coating layer is made of a material that is less likely to cause ion migration than the metal material constituting the second electrode,
The first electrode and the second electrode are arranged next to each other;
The sealing material is a material different from the first electrode and the second electrode adjacent to the first electrode so as to come into contact with the back surface of the back electrode type solar battery cell. An insulating material having a migration suppression function is arranged,
The first coating layer is interposed between the first electrode and the insulating material in contact with the back surface of the back electrode solar cell, and the second coating layer is the second electrode. the contact with the back surface of back electrode type solar cell is interposed, solar cell module between the insulating material and. A back electrode type solar cell in which a first electrode adjacent to each other on one surface side of the substrate and a second electrode having a polarity different from that of the first electrode are disposed, and a first wiring member adjacent to each other And a solar cell with wiring comprising the second wiring member is a method of manufacturing a solar cell module sealed with a sealing material,
Installing at least one of the first electrode and the first wiring member a first covering member made of a material that is less likely to cause ion migration than the metal material constituting the first electrode;
Installing at least one of the second electrode and the second wiring member a second covering member made of a material that is less likely to cause ion migration than the metal material constituting the second electrode;
The first covering member covers the surface of the first electrode with a first covering layer formed by heating and melting and solidifying the first covering member, and the first electrode and the first wiring member Electrically connecting
Covering the surface of the second electrode with a second coating layer formed by solidifying after heating and melting the second coating member, the second electrode, and the second wiring member Electrically connecting
Furthermore, an insulating material is disposed between the first electrode and the second electrode adjacent to the first electrode so as to contact the back surface of the back electrode type solar cell, and the first electrode A coating layer is interposed between the first electrode and the insulating material in contact with the back surface of the back electrode solar cell, and the second coating layer is interposed between the second electrode and the insulating material. An insulating resin composition having a function of suppressing ion migration, which is a resin composition different from the sealing material, is disposed so as to be in contact with and interposed between the material and the back surface of the back electrode type solar battery cell. The manufacturing method of a solar cell module including the process and the process of hardening | curing this insulating resin composition and making it an insulating material.

Images