JP5359641B2 - Display device - Google Patents

Description

The present invention relates to a display device including an optical sensor that detects the illuminance of light.

  A non-light-emitting display device such as a liquid crystal display device performs display by irradiating light from the outside onto a display portion in which pixels are arranged in a matrix. As a method for irradiating light from the outside, there are a method using external light around the display device and a method in which a light source (backlight) is provided on the back of the display unit and the display unit is illuminated by the backlight. In general, the former display device is called a reflective display device, and the latter display device is called a transmissive display device.

  By the way, it is known that the visibility of display in a transmissive display device changes according to the brightness around the display device. For example, if the periphery of the display device is dark, the appearance of the display device is good, but if the periphery of the display device becomes bright, the appearance of the display device is deteriorated.

  Therefore, in Patent Document 1 and the like, the illuminance of light (external light) from the periphery of the display device is detected by an optical sensor, and the illuminance of the backlight is controlled according to the detected illuminance of the external light to make the display device appear. It has improved.

  Further, as a proposal for obtaining a small and high dynamic range sensor in such an optical sensor for detecting the illuminance of light, for example, in Patent Document 2, a photocurrent signal detected by a photodiode constituting the optical sensor is used. Current amplification is performed by a bipolar transistor.

JP 2000-112382 A JP 2003-75252 A

  When the optical sensor is used to detect the ambient brightness of a display device as shown in Patent Document 1, if the optical sensor is composed of an amorphous silicon thin film transistor (hereinafter referred to as a-Si TFT), the optical sensor and the display are displayed. Can be manufactured in the same process. Here, in the optical sensor using the a-Si TFT, when a negative voltage (for example, about −5 V to −10 V) is applied to the gate electrode of the TFT, the light sensor is connected between the drain and source of the TFT according to the illuminance of light. A current that flows (referred to as a leakage current) is detected.

  By the way, since the leakage current of the a-Si TFT is generally very small, in order to use the photosensor of the a-Si TFT for controlling the illuminance of the backlight as proposed in Patent Document 1, the optical sensor It is desirable to amplify the leakage current from and then take it out. Here, the method proposed in Patent Document 2 is to amplify the output current from the optical sensor using a bipolar transistor. Therefore, when using the technique of the above-mentioned Patent Document 2, since the manufacturing process is different between the a-Si TFT and the bipolar transistor, the display unit and the optical sensor cannot be manufactured in the same process, and an increase in the manufacturing process is avoided. I can't.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a display device including an optical sensor particularly suitable for illuminance control of a backlight of the display device.

In order to achieve the above object, a display device of the present invention is a display device that controls the illuminance of light emitted from a light source according to the illuminance of external light, each of which is formed on the same substrate. An optical sensor composed of a thin film transistor, and a control unit that is provided as a member different from the optical sensor and controls the illuminance of light emitted from the light source based on a current signal output from the optical sensor, The optical sensor receives external light, outputs a photocurrent signal corresponding to the illuminance of the received external light, a current-voltage converter that converts the photocurrent signal into a voltage signal, and the voltage A voltage amplifying unit for amplifying a signal; and a current amplifying unit for outputting a current signal corresponding to the amplified voltage signal to the control unit. The photoelectric conversion unit has a control terminal connected to a negative power source. , One current path is the first A first thin film transistor connected to a connection point and having the other current path grounded; and the current-voltage converter includes a control terminal and one current path connected to a positive power source, and the other current path connected to the first current path. The voltage amplification unit has a control terminal connected to the first connection point, one current path connected to the second connection point, and the other one connected to the second connection point; A third thin film transistor having a current path grounded, a control terminal and a fourth thin film transistor having one current path connected to the positive power source and the other current path connected to the second connection point. The current amplifier includes a fifth thin film transistor having a control terminal connected to the second connection point, one current path connected to the positive power supply, and the other current path connected to the output terminal. It is characterized by that.

ADVANTAGE OF THE INVENTION According to this invention, the display apparatus provided with the optical sensor especially suitable for the illumination intensity control of the backlight of a display apparatus can be provided.

It is a figure which shows the whole structure of the liquid crystal display device as an example of the display apparatus provided with the optical sensor which concerns on one Embodiment of this invention. It is a block diagram which shows the internal structure of a backlight controller. It is a figure which shows the circuit structure of an optical sensor. It is a figure which shows the gate voltage Vg-drain current Id characteristic at the time of light irradiation of TFT. It is a figure which shows the simulation result with respect to the circuit of FIG. It is a figure which shows sectional drawing of TFT. It is a figure shown about the bending structure of TFT.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.
FIG. 1 is a diagram illustrating an overall configuration of a liquid crystal display device as an example of a display device including an optical sensor according to an embodiment of the present invention. The display device illustrated in FIG. 1 includes a display panel 10, an optical sensor 20, and a backlight controller 30. Here, the display device illustrated in FIG. 1 is not necessarily a liquid crystal display device as long as it is a transmissive display device that performs display using a backlight.

  The display panel 10 includes a flexible printed circuit board (FPC) 13 connected to a glass substrate on which the display unit 11 and the driver 12 are mounted, and a backlight 14 disposed on the back surface of the display unit 11. The display unit 11 includes a pixel including an a-Si TFT and a liquid crystal layer. Each pixel of the display unit 11 has a characteristic of changing the light transmittance upon application of a voltage from the driver 12, and performs gradation display using this characteristic. The driver 12 applies a voltage to the display unit 11 based on display data input via the FPC 13. The FPC 13 connects an external power source (not shown) and the display panel 10. The backlight 14 includes, for example, an LED and a light guide plate that guides light from the LED to the display unit 11, and performs light irradiation from the back surface of the display unit 11.

  The optical sensor 20 is mounted on the glass substrate of the display panel 10, detects the brightness around the display unit 11 (illuminance of outside light incident on the display unit 11), and a current corresponding to the detected illuminance of outside light. The signal Iout is output to the backlight controller 30. Details of the optical sensor 20 will be described later.

  The backlight controller 30 takes in the current signal Iout from the optical sensor 20 and controls the illuminance of the backlight 14 according to the magnitude of the taken current signal.

  FIG. 2 is a block diagram showing the internal configuration of the backlight controller 30. As shown in FIG. 2, the backlight controller 30 includes an IV conversion unit 31, a level conversion unit 32, and an LED driver 33. The IV conversion unit 31 converts the current signal Iout from the optical sensor 20 into a voltage signal Vout (Vout = −Iout × R). The level conversion unit 32 performs level conversion (gain adjustment) on the voltage signal Vout obtained by the IV conversion unit 31. The LED driver 33 generates a voltage for driving the LED of the backlight 14 according to the voltage signal obtained by the level conversion unit 32 and supplies the voltage to the backlight 14. The LED driver 33 increases the drive voltage of the LED so as to increase the illuminance of the LED when the illuminance of external light detected by the optical sensor 20 is strong. Thereby, the appearance of the display unit 11 is improved. On the other hand, when the illuminance of external light detected by the optical sensor 20 is weak, the LED drive voltage is lowered so as to reduce the illuminance of the LED. This will reduce power consumption.

  Details of the optical sensor 20 will be described below. FIG. 3 is a diagram showing a circuit configuration of the optical sensor 20 in the present embodiment. The optical sensor 20 shown in FIG. 3 includes transistors Tr1, Tr2, Tr3, Tr4, and Tr5 each composed of an a-Si thin film transistor (TFT).

  The transistor Tr1 has a gate terminal which is a control terminal connected to a negative voltage source −V, one of a drain terminal and a source terminal which is a current path is connected to a point A which is a first connection point, and the other is grounded Has been. The transistor Tr1 is a photoelectric conversion unit that detects the illuminance of light by using the gate voltage Vg-drain current Id characteristic when the TFT is irradiated with light as shown in FIG. As shown in FIG. 4, in the TFT, when a negative voltage (for example, about −5 V to −10 V) is applied to the gate terminal, a photocurrent signal corresponding to the illuminance of the light flows when light irradiation is performed. It has characteristics. By detecting this photocurrent signal, the TFT can be used as an optical sensor.

  However, since the drain current (leakage current) flowing through the TFT by light irradiation is very small as shown in FIG. 4, it is difficult to use it for illuminance control of the backlight 14 as it is. Therefore, in this embodiment, the current Id flowing through the transistor Tr1 is amplified and supplied to the backlight controller 30. Hereinafter, an amplifier circuit for this purpose will be described.

  In the transistor Tr2, one of a drain terminal and a source terminal which are current paths is connected to a positive voltage source + V together with a gate terminal which is a control terminal, and the other is connected to a point A. The transistor Tr2 forms an inverter circuit together with the transistor Tr1, and is a current-voltage converter that generates a potential corresponding to the leak current at the point A when a leak current flows through the transistor Tr1 due to light irradiation.

  In the transistor Tr3, a gate terminal which is a control terminal is connected to a point A, one of a drain terminal and a source terminal which is a current path is connected to a point B which is a second connection point, and the other is grounded. The transistor Tr4 has one of a drain terminal and a source terminal which are current paths connected to a positive voltage source + V together with a gate terminal which is a control terminal, and the other connected to a point B. The transistor Tr3 and the transistor Tr4 form an inverter circuit, and are a voltage amplification unit that generates a potential at the point B by inverting and amplifying the potential generated at the point A.

  In the transistor Tr5, a gate terminal which is a control terminal is connected to the point B, one of a drain terminal and a source terminal which is a current path is connected to a positive voltage source + V, and the other is connected to the backlight controller 30 as an output terminal. Has been.

  In the configuration of FIG. 3, when the transistor Tr1 is irradiated with light, a drain current (leakage current) Id corresponding to the illuminance of the light flows. When a current flows through the transistor Tr1, the potential at the point A changes accordingly. In the configuration of FIG. 3, the potential at point A decreases when Id increases and increases when Id decreases. When the potential at point A changes, the potential at point B also changes. In the configuration of FIG. 3, the potential at the point B increases when the potential at the point A decreases, and decreases when the potential increases. Further, when a potential is generated at the point B, the magnitude of the current Iout flowing through the transistor Tr5 also changes. In the configuration of FIG. 3, the output current Iout increases as the potential at point B increases, and decreases as the potential at point B decreases.

  That is, in the configuration of FIG. 3, the output current Iout increases when the illuminance of light irradiated to the transistor Tr1 increases (Id increases), and decreases when it decreases. In this way, the output current of the transistor Tr1 is amplified.

Here, assuming that the ratio of the current Iout flowing through the transistor Tr5 and the current Id flowing through the transistor Tr1 is the current amplification factor of the entire circuit of FIG. be able to. For example, in the configuration of FIG. 3, when the voltage of the voltage source is ± 12 V, the channel length L of each transistor is 6.2 μm, and a TFT having a channel width W of 100,000 μm (= 100 mm) is used as the transistor Tr1, When the channel widths W of Tr2, Tr3, Tr4, and Tr5 are 1600 μm, 7400 μm, 80 μm, and 1000 μm, respectively, the current amplification factor can be increased to about 100 times. The result of circuit simulation with this setting is shown in FIG. In this circuit simulation, it can be seen that Iout of 10 ⁻⁵ order is obtained from Id of 10 ⁻⁷ order, and the current amplification factor is about 100 times. The reason why Id is larger than that of the example of FIG. 4 is that the channel width W of the transistor Tr1 is longer than that of FIG.

  In addition, when the transistor Tr1 similar to the above is used, if the channel widths W of the transistors Tr2, Tr3, Tr4, and Tr5 are 12800 μm, 74000 μm, 80 μm, and 8000 μm, respectively, the current amplification factor can be increased by about 1000 times. When the channel widths W of the transistors Tr2, Tr3, Tr4, and Tr5 are 160 μm, 740 μm, 80 μm, and 100 μm, respectively, the current amplification factor can be increased to about 10 times.

  Hereinafter, the configuration of the TFT that constitutes the pixel of the optical sensor 20 or the display unit 11 illustrated in FIG. 3 will be described. As described above, in the present embodiment, the photosensor 20 and the transistors constituting the pixels of the display unit 11 are configured by a-Si TFTs. Therefore, these transistors can be manufactured in a common manufacturing process.

FIG. 6 is a diagram showing a cross-sectional view of the TFT constituting the pixel of the optical sensor 20 or the display unit 11. In the TFT shown in FIG. 6, a gate electrode 102 is formed on the glass substrate 101 of the display panel 10. The gate electrode 102 is formed, for example, by forming a metal film such as Cr, Al, Ti or the like on the glass substrate 101 by sputtering and etching the metal film. In FIG. 6, a gate insulating film 103 made of SiO ₂ , SiN _x or the like is formed on the glass substrate 101 on which the gate electrode 102 is formed. The gate insulating film 103 is formed by, for example, a plasma CVD method.

In FIG. 6, an intrinsic a-Si layer 104 and an n ⁺ a-Si layer 105 are formed on the gate insulating film 103. The intrinsic a-Si layer 104 and the n ⁺ a-Si layer 105 are formed by, for example, a plasma CVD method. In addition, an etching stopper 106 is formed between the intrinsic a-Si layer 104 and the n ⁺ a-Si layer 105.

In FIG. 6, a source electrode and a drain electrode 107 are formed on the n ⁺ a-Si layer 105. These source and drain electrodes 107 are formed by forming a metal film such as Cr, Al, Ti or the like on the n ⁺ a-Si layer 105 by sputtering and etching the metal film. The etching stopper 106 is formed so as not to damage the intrinsic a-Si layer 104 during the etching for forming the drain electrode and the source electrode 107.

  In FIG. 6, a protective film 108 is formed on the drain electrode and the source electrode 107.

  Here, when the intrinsic a-Si layer 104 shown in FIG. 6 is irradiated with light, a current is generated by photoelectric conversion. This current is the above-described leakage current. When the TFT is used as a pixel of the display unit 11, the intrinsic a-Si layer 104 is shielded from light by the protective film 108 so that this leakage current does not occur. Further, when the TFT is used as the photoelectric conversion unit of the optical sensor 20, the intrinsic a-Si layer 104 is not shielded from light. Note that the leakage current generated by photoelectric conversion can be increased by increasing the channel length L or the channel width W. However, if these are simply increased, the optical sensor 20 cannot be increased in size. .

  Therefore, in the present embodiment, the TFT is bent to increase the channel width W while suppressing an increase in size of the optical sensor 20 so that a large leakage current can be obtained. FIG. 7 shows a bent structure of the TFT. As shown in FIG. 7, the gate electrode 102 is formed by bending one electrode. The source and drain electrodes 107 are formed so that the source electrodes are connected to each other between the bent gate electrodes, and the drain electrodes are connected to each other between the drain electrodes. With such a configuration, the channel width W can be increased according to the number of bendings.

  As described above, according to the present embodiment, the photoelectric conversion unit and the amplification circuit of the optical sensor 20 are formed by the same a-Si TFT as the pixel of the display unit 11. Can be manufactured on a glass substrate in the same manufacturing process. For this reason, it is particularly suitable for an optical sensor used for illuminance control of a backlight such as a liquid crystal display device.

  In addition, since the photocurrent output from the photoelectric conversion unit of the a-Si TFT can be amplified to a level that can be used for illumination control of the backlight, etc., the photocurrent can be generated using an inexpensive IV conversion unit. It is possible to take it out. Furthermore, since the output current from the optical sensor is large, there is no need to worry about external noise or the like.

  Further, by adopting a bent structure for each TFT constituting the photosensor 20, it is possible to increase the size of the photosensor 20 while increasing the channel length of each TFT.

  Although the present invention has been described above based on the embodiments, the present invention is not limited to the above-described embodiments, and various modifications and applications are naturally possible within the scope of the gist of the present invention.

  Further, the above-described embodiments include various stages of the invention, and various inventions can be extracted by appropriately combining a plurality of disclosed constituent elements. For example, even if some configuration requirements are deleted from all the configuration requirements shown in the embodiment, the above-described problem can be solved, and this configuration requirement is deleted when the above-described effects can be obtained. The configuration can also be extracted as an invention.

  DESCRIPTION OF SYMBOLS 10 ... Display panel, 11 ... Display part, 12 ... Driver, 13 ... Flexible printed circuit board (FPC), 14 ... Backlight, 20 ... Optical sensor, 30 ... Backlight controller

Claims (4)

A display device that controls the illuminance of light emitted from a light source according to the illuminance of external light,
An optical sensor comprising a plurality of thin film transistors each formed on the same substrate;
A control unit that is provided as a member different from the optical sensor and controls the illuminance of light emitted from the light source based on a current signal output from the optical sensor;
With
The optical sensor is
A photoelectric conversion unit that receives external light and outputs a photocurrent signal according to the illuminance of the received external light;
A current-voltage converter that converts the photocurrent signal into a voltage signal;
A voltage amplifier for amplifying the voltage signal;
A current amplifier that outputs a current signal corresponding to the amplified voltage signal to the controller;
Have,
The photoelectric conversion unit includes a first thin film transistor having a control terminal connected to a negative power source, one current path connected to a first connection point, and the other current path grounded,
The current-voltage converter includes a second thin film transistor in which a control terminal and one current path are connected to a positive power source, and the other current path is connected to the first connection point,
The voltage amplifier includes a third thin film transistor having a control terminal connected to the first connection point, one current path connected to the second connection point, and the other current path grounded, a control terminal, A fourth thin film transistor having one current path connected to the positive power supply and the other current path connected to the second connection point;
The current amplifier includes a fifth thin film transistor having a control terminal connected to the second connection point, one current path connected to the positive power source, and the other current path connected to an output terminal. Characteristic display device. The display device according to claim 1 , wherein each of the thin film transistors is a thin film transistor made of amorphous silicon. 3. The display device according to claim 2 , wherein each of the thin film transistors is formed in a structure that can be manufactured by a common process. A display unit in which a thin film transistor is formed for each pixel;
4. The display device according to claim 3 , wherein each thin film transistor in the optical sensor and each thin film transistor in the display portion are formed in a structure that can be manufactured by a common process.

Images