JP5379500B2 - Semiconductor chip thinning processing apparatus and processing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To execute stable slicing machining of a semiconductor chip by means of grinding or polishing. <P>SOLUTION: An adhesive 2 is filled in a recessed part 11 provided at a holder 10, the semiconductor chip 3 is attached to the recessed part 11 from a surface 3a side of the semiconductor chip 3 after the adhesive 2 flows in a groove part 13 continuing to the recessed part 11, a grinding wheel spindle 51 for applying pressure to the semiconductor chip 3 is rotated together with rotation of a holder 10 in which the semiconductor chip 3 is incorporated to apply pressure to a back face 3b of the semiconductor chip 3 by the grinding wheel spindle 51 and to grind the back face 3b side of the semiconductor chip 3, a part on the back face 3b side of the semiconductor chip 3 protruded from a surface 10a of the holder 10 is ground until the grinding wheel spindle 51 reaches the surface 10a of the holder 10, and the depth of an aperture part 14 formed in a thickness direction of the holder 10 from the surface 10a of the holder 10 with the same depth as the recessed part 11 is measured to check the thickness of the semiconductor chip 3. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to a processing device for thinning a semiconductor chip for forming a thin semiconductor chip and a processing method therefor.

  SIMS (Secondary Ion Mass Spectroscopy) is widely used for impurity analysis in semiconductors because it is suitable for precise measurement of impurity distribution in semiconductors. When analyzing a semiconductor by SIMS, it may be required to reduce the thickness of the semiconductor (semiconductor chip). Therefore, for example, as shown in FIG. 20, it is also possible to consider forming a thin semiconductor chip for analysis by SIMS using a technique for forming a thin semiconductor chip as one method. .

  In FIG. 20A, a grinding wheel 110 is mounted on a spindle (not shown), and a grinding wheel (diamond or the like) 111 is fixed to the lower part of the grinding wheel 110. The grinding wheel 110 is supposed to rotate with the rotation of a spindle (not shown). When grinding the back surface 113a of the semiconductor chip 113 using the grinding wheel 110, the front surface 113b of the semiconductor chip 113 coated with the adhesive 114 is placed on the holder 112 provided on the table 115, and the holder The back surface 113 a of the semiconductor chip 113 placed (attached) on 112 is positioned directly below the grinding wheel 110.

  Then, the spindle (not shown) is rotated and the grinding wheel 110 is lowered, and the grinding wheel 111 fixed to the grinding wheel 110 rotating with the rotation of the spindle (not shown) comes into contact with the semiconductor chip 113 and is pressed. Thus, the back surface 113a is ground by the grinding wheel 111.

  In another grinding method, as shown in FIG. 20B, the surface 123a of the semiconductor chip 123 is attracted and held by the vacuum chuck 125, and the gap between the lower surface of the vacuum chuck 125 is adjusted to z. The grinding diamond wheel 126 is moved to perform grinding to obtain a semiconductor chip 123 having a total thickness z.

Japanese Patent Laid-Open No. 7-50280 (paragraph 0009, FIG. 1 (d))

  However, in FIG. 20A, since the adhesive 114 layer is formed on the front surface 113b of the semiconductor chip 113 and attached to the holder 112, the rotating grinding wheel 110 (grinding wheel 111) and the back surface 113a of the semiconductor chip 113 are used. When the side abuts, the semiconductor chip 113 may be displaced from the position of the holder 112 to which the semiconductor chip 113 has been adhered due to the pressing of the rotating grinding wheel 110 (grinding wheel 111). That is, the pressure of the rotating grinding wheel 110 (grinding wheel 111) is applied from the side of the semiconductor chip 113. Since the semiconductor chip 113 is only attached to the holder 112 with the adhesive 114 and is not positioned, the semiconductor chip 113 attached to the holder 112 is pressed by the rotating grinding wheel 110 (grinding wheel 111). It becomes easy to peel off from the end (edge) of the surface 113a.

  In addition, after grinding the back surface 113a of the semiconductor chip 113, the height of the back surface 113a of the semiconductor chip 113 can be measured with a measuring device such as a sensor on the basis of the front surface 112a of the holder 112. However, the semiconductor chip 113 is small, and it is not easy to bring a sensor or the like into contact with the back surface 113a of the semiconductor chip 113. A measuring device such as a sensor makes it easy to contact the back surface 113a of the semiconductor chip 113 with reference to the front surface 112a of the holder 112. It is difficult to measure the height.

  Further, since the adhesive 114 is applied to the surface 113b of the semiconductor chip 113 and adhered to the surface 112a of the holder 112, the adhesive 114 protrudes from the surface 113b of the semiconductor chip 113 and is placed on the surface 112a of the holder 112. Sometimes. Therefore, while the back surface 113a of the semiconductor chip 113 is being ground by the rotating grinding wheel 110 (grinding wheel 111), the adhesive 114 placed on the front surface 112a of the holder 112 becomes a lump, and the grinding wheel 110 (grinding wheel). 111) may hinder grinding of the back surface 113a of the semiconductor chip 113. As a result, it becomes difficult to obtain a semiconductor chip 113 having a predetermined thickness.

  Further, in the grinding method shown in FIG. 20B, the surface 123a of the semiconductor chip 123 is attracted and held by the vacuum chuck 125, and the gap between the lower surface of the vacuum chuck 125 is adjusted to z and the grinding diamond is adjusted. When the wheel 126 is moved to perform grinding on the back surface 123b side of the semiconductor chip 123, pressure from the grinding diamond wheel 126 is applied to the side of the semiconductor chip 123 (arrow direction shown in FIG. 20B). By applying the pressure, the semiconductor chip 123 is easily moved in the pressing direction. That is, since the semiconductor chip 123 is not positioned simply by being held by suction by the vacuum chuck 125, the semiconductor chip 123 is easily detached from the vacuum chuck 125 by pressing from the grinding diamond wheel 126, and Stable grinding becomes difficult.

  The present invention has been made in view of the above circumstances, and a semiconductor chip slicing processing apparatus that enables stable grinding or polishing of the back side of a semiconductor chip by positioning the semiconductor chip and its processing The purpose is to provide a method.

  In order to achieve the above object, according to the first aspect of the present invention, a semiconductor chip is attached to the front side, a holder that can be rotated while the semiconductor chip is attached, and the holder that is rotating A grinding member that grinds the semiconductor chip by rotating the semiconductor chip attached to the holder by applying pressure to the front surface of the semiconductor chip, and thins the semiconductor chip, and the holder And a control means for controlling the rotation of the grinding member and controlling the pressing of the grinding member to the surface side of the holder, and a processing device for thinning a semiconductor chip, the surface side of the holder In attaching the semiconductor chip to the holder, the semiconductor chip is assembled on the surface side of the holder. When the body chip is positioned, the periphery of the portion of the semiconductor chip that has entered from the surface side of the holder is surrounded, and the semiconductor chip protrudes from the surface of the holder so that the semiconductor chip protrudes from the surface of the holder. The concave portion formed in the thickness direction and the same depth as the concave portion formed in the thickness direction of the holder from the surface of the holder in the same direction as the concave portion provided to the surface of the holder. And a first groove formed continuously from the bottom surface of the recess along the thickness direction of the holder, and formed in the bottom surface of the recess. It is characterized by providing.

  Therefore, according to the first aspect of the present invention, the concave portion is formed in the thickness direction of the holder from the holder surface, and when the adhesive for attaching the semiconductor chip is injected into the concave portion, the bottom portion of the concave portion is formed. When a part of the adhesive injected into the recess flows into the first groove along the thickness direction of the holder, the semiconductor chip is incorporated into the recess, the semiconductor chip is positioned, and the semiconductor chip is fixed to the recess (recess When the semiconductor chip is attached to the surface of the holder, it surrounds the part of the semiconductor chip that enters from the front side of the holder, and a part of the semiconductor chip protrudes from the surface of the holder. The semiconductor chip that protrudes from the surface of the holder by applying pressure to the semiconductor chip attached to the Parts it is possible to grind the.

  The holder is also provided with a hole formed in the thickness direction of the holder from the surface of the holder and having the same depth as the recess, and the portion protruding from the surface of the holder of the semiconductor chip incorporated in the recess is ground. And, when measuring the thickness of the thinned semiconductor chip, it is possible to check the thickness of the thinned semiconductor chip by measuring the depth of the hole without directly measuring the thickness of the semiconductor chip. become. Furthermore, since a groove portion extending from the bottom surface portion of the recess portion along the thickness direction of the holder is provided on the bottom surface portion of the recess portion, when the adhesive for attaching the semiconductor chip is injected into the recess portion, the recess portion is formed. A part of the adhesive flows from the bottom surface portion to the first groove portion that continues to the concave portion along the thickness direction of the holder, and it is possible to remove excess adhesive from the bottom surface portion of the concave portion.

  According to a second aspect of the present invention, a semiconductor chip is attached to the surface side, a holder that can be rotated with the semiconductor chip attached thereto, and a pressure applied to the surface side of the rotating holder. A polishing member that polishes the semiconductor chip by applying pressure to the semiconductor chip attached to the holder while rotating and thins the semiconductor chip, and rotates the holder and the polishing member. And a control means for controlling the pressing by the polishing member to the surface side of the holder, and a processing device for thinning a semiconductor chip, wherein the surface side of the holder is connected to the holder When mounting the semiconductor chip, the semiconductor chip is mounted on the surface side of the holder and the semiconductor chip is positioned. And surrounding the portion of the semiconductor chip that has entered from the surface side of the holder, and forming the semiconductor chip in the thickness direction of the holder from the surface of the holder so that the semiconductor chip protrudes from the surface of the holder. And formed in the same direction as the concave portion with respect to the surface of the holder and at the same depth as the concave portion formed in the thickness direction of the holder from the surface of the holder. A hole portion, and a first groove portion formed continuously from the bottom surface portion of the concave portion and extending along the thickness direction of the holder, are formed on the bottom surface portion of the concave portion. It is characterized by.

  Therefore, according to the second aspect of the present invention, the concave portion is formed in the holder in the thickness direction of the holder from the holder surface, and when the adhesive for attaching the semiconductor chip is injected into the concave portion, the bottom portion of the concave portion When a part of the adhesive injected into the recess flows into the first groove along the thickness direction of the holder, the semiconductor chip is incorporated into the recess, the semiconductor chip is positioned, and the semiconductor chip is fixed to the recess (recess When the semiconductor chip is attached to the surface of the holder, it surrounds the part of the semiconductor chip that enters from the front side of the holder, and a part of the semiconductor chip protrudes from the surface of the holder. The semiconductor chip that protrudes from the surface of the holder by applying pressure to the semiconductor chip attached to the Parts it is possible to polish.

  The holder is also provided with a hole formed in the thickness direction of the holder from the surface of the holder and having the same depth as the recess, and the portion protruding from the surface of the holder of the semiconductor chip incorporated in the recess is polished. And, when measuring the thickness of the thinned semiconductor chip, it is possible to check the thickness of the thinned semiconductor chip by measuring the depth of the hole without directly measuring the thickness of the semiconductor chip. become. Furthermore, since a groove portion extending from the bottom surface portion of the recess portion along the thickness direction of the holder is provided on the bottom surface portion of the recess portion, when the adhesive for attaching the semiconductor chip is injected into the recess portion, the recess portion is formed. A part of the adhesive flows from the bottom surface portion to the first groove portion that continues to the concave portion along the thickness direction of the holder, and it is possible to remove excess adhesive from the bottom surface portion of the concave portion.

  Furthermore, the invention described in claim 3 is a semiconductor chip attached to the front surface side, a holder that can be rotated with the semiconductor chip attached thereto, and a pressure applied to the front surface side of the rotating holder. A grinding member that grinds the semiconductor chip by applying pressure to the semiconductor chip attached to the holder while rotating, and thins the semiconductor chip, and rotates the holder and the grinding member. And a control means for controlling the pressing by the grinding member to the surface side of the holder, and a processing device for thinning a semiconductor chip, wherein the surface side of the holder is connected to the holder When mounting the semiconductor chip, the semiconductor chip is positioned on the surface side of the holder and the semiconductor chip is positioned. Then, it surrounds the periphery of the portion of the semiconductor chip that has entered from the surface side of the holder, so that the semiconductor chip protrudes from the surface of the holder in the thickness direction of the holder. The recessed portion formed is formed in the same direction as the recessed portion with respect to the surface of the holder and at the same depth as the recessed portion formed in the thickness direction of the holder from the surface of the holder. The bottom surface portion is formed between the adjacent recesses along the thickness direction of the holder from the surface of the holder and connects the adjacent recesses, and the bottom surface portion is the same as the bottom surface portion of the recess And a second groove part that forms a flat surface.

  Therefore, according to the third aspect of the present invention, the holder has a recess formed in the thickness direction of the holder from the holder surface, and continues to the recess when an adhesive for attaching the semiconductor chip is injected into the recess. A part of the adhesive injected into the recess flows into the second groove, and the semiconductor chip is positioned by incorporating the semiconductor chip into the recess. When the semiconductor chip is fixed to the recess (when the semiconductor chip is attached to the recess), Surrounding the periphery of the part of the semiconductor chip that has entered from the surface of the holder, a part of the semiconductor chip will protrude from the surface of the holder. In this state, the holder is rotated and the semiconductor chip attached to the holder By applying pressure while rotating the grinding member, it becomes possible to grind a part of the semiconductor chip protruding from the surface of the holder

  The holder is also provided with a hole formed in the thickness direction of the holder from the surface of the holder and having the same depth as the recess, and the portion protruding from the surface of the holder of the semiconductor chip incorporated in the recess is ground. And, when measuring the thickness of the thinned semiconductor chip, it is possible to check the thickness of the thinned semiconductor chip by measuring the depth of the hole without directly measuring the thickness of the semiconductor chip. become. Furthermore, since the second groove is formed by connecting the recesses between the recesses along the thickness direction of the holder from the surface of the holder, and the bottom surface is flush with the bottom surface of the recess, the semiconductor chip is attached. When the adhesive for injection is injected into the recess, a part of the adhesive flows from the bottom surface of the recess to the bottom surface of the second groove, and it is possible to remove excess adhesive from the bottom surface of the recess.

  Furthermore, since the second groove portion connects the recesses and is continuous with the recesses, when the adhesive is injected into the recess, the adhesive flows through the second groove and the adhesive flows into the other recesses. Finally, it becomes possible to make the height of the liquid surface by the adhesive in the concave portion the same. Therefore, when the second groove part that connects the recesses is formed between all the recesses in the holder and all the recesses in the holder are connected by the second groove part, the adhesive is injected into the recesses. It becomes possible to make the level of the adhesive liquid level of all the concave portions in the holder the same, and it is possible to eliminate excess adhesive from the bottom surface portion of the concave portions.

The second groove formed between the recesses may be at any position as long as it is between the recesses. For example, the second groove may be formed between the side surfaces facing each other.

In that case, the second groove is formed between the side portions facing each other, connecting the recesses, extending from the side portions facing each other that are continuous with each other, and along the thickness direction of the holder. It is possible to make the liquid level of the adhesive in the concave part the same by injecting the adhesive into the concave part, and it is possible to eliminate excess adhesive from the bottom part of the concave part Become .

According to a fourth aspect of the present invention, there is provided a semiconductor chip attached to the front surface side, a holder that can be rotated with the semiconductor chip attached thereto, and a pressure applied to the front surface side of the rotating holder. A polishing member that polishes the semiconductor chip by applying pressure to the semiconductor chip attached to the holder while rotating and thins the semiconductor chip, and rotates the holder and the polishing member. And a control means for controlling the pressing by the polishing member to the surface side of the holder, and a processing device for thinning a semiconductor chip, wherein the surface side of the holder is connected to the holder When mounting the semiconductor chip, the semiconductor chip is mounted on the surface side of the holder and the semiconductor chip is positioned. And surrounding the portion of the semiconductor chip that has entered from the surface side of the holder, and forming the semiconductor chip in the thickness direction of the holder from the surface of the holder so that the semiconductor chip protrudes from the surface of the holder. And formed in the same direction as the concave portion with respect to the surface of the holder and at the same depth as the concave portion formed in the thickness direction of the holder from the surface of the holder. A bottom surface portion that is formed between the adjacent recesses along the thickness direction of the holder from the surface of the holder and the surface of the holder and connects the adjacent recesses is flush with the bottom surface portion of the recess And a second groove part for forming the structure .

Therefore, according to the fourth aspect of the present invention, the holder has a recess formed in the thickness direction of the holder from the holder surface, and when the adhesive for attaching the semiconductor chip is injected into the recess, the holder continues to the recess. A part of the adhesive injected into the recess flows into the second groove, and the semiconductor chip is positioned by incorporating the semiconductor chip into the recess. When the semiconductor chip is fixed to the recess (when the semiconductor chip is attached to the recess), Surrounding the periphery of the part of the semiconductor chip that has entered from the surface of the holder, a part of the semiconductor chip will protrude from the surface of the holder. In this state, the holder is rotated and the semiconductor chip attached to the holder , it is possible that the polishing member to polish the portion of the semiconductor chip protruding from the surface of the holder by adding pressing while rotating

The holder is also provided with a hole formed in the thickness direction of the holder from the surface of the holder and having the same depth as the recess, and the portion protruding from the surface of the holder of the semiconductor chip incorporated in the recess is polished. And, when measuring the thickness of the thinned semiconductor chip, it is possible to check the thickness of the thinned semiconductor chip by measuring the depth of the hole without directly measuring the thickness of the semiconductor chip. Become .

Furthermore, since the second groove is formed by connecting the recesses between the recesses along the thickness direction of the holder from the surface of the holder, and the bottom surface is flush with the bottom surface of the recess, the semiconductor chip is attached. When the adhesive for injection is injected into the recess, a part of the adhesive flows from the bottom surface of the recess to the bottom surface of the second groove, and it is possible to remove excess adhesive from the bottom surface of the recess .

Furthermore, since the second groove portion connects the recesses and is continuous with the recesses, when the adhesive is injected into the recess, the adhesive flows through the second groove and the adhesive flows into the other recesses. Finally, it becomes possible to make the height of the liquid surface by the adhesive in the concave portion the same .

Therefore, when the second groove part that connects the recesses is formed between all the recesses in the holder and all the recesses in the holder are connected by the second groove part, the adhesive is injected into the recesses. It becomes possible to make the level of the adhesive liquid level of all the concave portions in the holder the same, and it is possible to eliminate excess adhesive from the bottom surface portion of the concave portions .

The second groove formed between the recesses may be at any position as long as it is between the recesses. For example, the second groove may be formed between the side surfaces facing each other .

In that case, the second groove is formed between the side portions facing each other, connecting the recesses, extending from the side portions facing each other that are continuous with each other, and along the thickness direction of the holder. It is possible to make the liquid level of the adhesive in the concave part the same by injecting the adhesive into the concave part, and it is possible to eliminate excess adhesive from the bottom part of the concave part Become .

Furthermore, the invention according to claim 5 is the configuration according to any one of claims 1 to 4, and in addition, when the semiconductor chip is attached to the recess of the holder, the recess provided in the holder The surface of the semiconductor chip is placed on the bottom portion .

Therefore, according to the invention described in claim 5, the semiconductor chip is ground from the back side of the semiconductor chip in order to incorporate the semiconductor chip into the recess by placing the surface of the semiconductor chip on the bottom surface of the recess provided in the holder. Alternatively, the semiconductor chip is thinned in a state where the surface of the semiconductor chip is protected and the surface of the semiconductor chip that is to be polished is formed and the function of the semiconductor chip is maintained to obtain a thinned semiconductor chip Is possible .

According to a sixth aspect of the present invention, in addition to the structure according to any of the first to fifth aspects, the holder is made of silicon that can be ground or polished like the semiconductor chip. To do .

Therefore, according to the invention described in claim 6, since the holder can be ground similarly to the semiconductor chip, the surface of the holder is ground by rotating the grinding member or polishing member while pressing the holder, or Grind. In other words, a grinding member that is a fixed abrasive grain, or a polishing member that is a polishing surface (polishing cloth) and an abrasive (free abrasive grain) rotates while applying pressure to the holder, so that the back surface side of the semiconductor chip and the hole of the holder It becomes possible to grind or polish the surface side of the holder including the portion. As a result, when the semiconductor chip is assembled into the recess of the holder, it is not necessary to re-install the holder with a recess in which the back side of the semiconductor chip protrudes from the front surface of the holder. Make it possible to do .

According to the seventh aspect of the present invention, when an adhesive is injected into a concave portion provided on the front surface side of the holder, which is made of silicon that can be ground like a semiconductor chip, the thickness direction of the holder extends from the concave portion. A part of the adhesive flows into the first groove part, and a part of the adhesive is moved from the concave part to the first groove part; Positioning and mounting the semiconductor chip in the concave portion of the holder with the back surface of the semiconductor chip in the same direction as the front surface of the holder by incorporating, rotating the holder incorporating the semiconductor chip, and By rotating the grinding member that applies pressure to the semiconductor chip, the grinding member applies pressure to the back surface side of the semiconductor chip. A first grinding step of grinding a back surface side of a semiconductor chip and grinding a portion of the back surface side of the semiconductor chip protruding from the front surface of the holder until the grinding member reaches the front surface of the holder; After completion of the first grinding step, the grinding member is formed in the thickness direction of the holder from the back surface side of the semiconductor chip and the holder surface forming the same plane as the front surface of the holder. And a second grinding step of grinding the surface side of the holder including a hole having the same depth as the recess in the same direction as the recess .

Therefore, according to the seventh aspect of the present invention, the adhesive is injected into the concave portion provided in the holder, which is made of silicon that can be ground in the same manner as the semiconductor chip, and first from the concave portion along the thickness direction of the holder. Part of the adhesive flows into the groove, the semiconductor chip is assembled into the recess from the front side of the semiconductor chip, the semiconductor chip is positioned in the recess of the holder with the back surface of the semiconductor chip in the same direction as the front surface of the holder, After attaching to the recess, rotate the holder incorporating the semiconductor chip and rotate the grinding member that applies pressure to the semiconductor chip while applying pressure to the back surface side of the semiconductor chip by the grinding member. The grinding member reaches the surface of the holder on the back side of the semiconductor chip that protrudes from the surface of the holder. In addition, the grinding member rotates while applying pressure to the front surface side of the holder, so that the grinding member forms the same plane as the surface of the holder and the back surface side of the semiconductor chip and the holder including the hole portion of the holder. The semiconductor chip can be thinned by grinding the surface side .

Furthermore, in the invention according to claim 8, when an adhesive is injected into a recess provided on the surface side of the holder, which is made of silicon that can be ground in the same manner as a semiconductor chip, A part of the adhesive flows into the bottom surface of the second groove, which is flush with the bottom, and a part of the adhesive is moved from the recess to the second groove; Positioning the semiconductor chip in the recess of the holder by attaching the semiconductor chip from the front surface side of the semiconductor chip so that the back surface of the semiconductor chip is in the same direction as the front surface of the holder; The back surface of the semiconductor chip is rotated by the grinding member while rotating the embedded holder and rotating the grinding member that presses the semiconductor chip. By pressing, the back side of the semiconductor chip is ground and the back side portion of the semiconductor chip protruding from the front surface of the holder is ground until the grinding member reaches the front surface of the holder. And a first grinding step .

Therefore, according to the eighth aspect of the present invention, the adhesive is injected into the concave portion provided in the holder, which is made of silicon that can be ground like the semiconductor chip, and the bottom surface portion of the concave portion and the bottom surface portion of the concave portion are Part of the adhesive flows into the bottom surface of the second groove, which is the same plane, and the semiconductor chip is assembled into the recess from the front side of the semiconductor chip. After positioning the chip and attaching the semiconductor chip to the recess, the holder incorporating the semiconductor chip is rotated, and the grinding member that presses the semiconductor chip is rotated, and the grinding member presses the back side of the semiconductor chip. In addition, the grinding member grinds the back side of the semiconductor chip, and the grinding member holds the part on the back side of the semiconductor chip that protrudes from the surface of the holder. It enables thinning of the semiconductor chip by grinding until it reaches to the surface of the.

Further, in the ninth aspect of the present invention, when the adhesive is injected into the concave portion provided on the surface side of the holder, which is made of silicon that can be ground in the same manner as the semiconductor chip, the concave portion of the concave portion is A part of the adhesive flows into the bottom surface of the second groove, which is flush with the bottom, and a part of the adhesive is moved from the recess to the second groove; Positioning the semiconductor chip in the recess of the holder by attaching the semiconductor chip from the front surface side of the semiconductor chip so that the back surface of the semiconductor chip is in the same direction as the front surface of the holder; While rotating the built-in holder and rotating the grinding member that presses the semiconductor chip, the grinding member rotates the back side of the semiconductor chip. By applying pressure, the back surface side of the semiconductor chip is ground, and the back surface portion of the semiconductor chip protruding from the front surface of the holder is ground until the grinding member reaches the front surface of the holder. After completion of the first grinding step and the first grinding step, the holder from the back surface side of the semiconductor chip and the holder from the surface of the holder forming the same plane as the surface of the holder by the grinding member A second grinding step of grinding the surface side of the holder including a hole having the same depth as the recess in the same direction as the recess provided in the thickness direction. Features .

Therefore, according to the ninth aspect of the present invention, the adhesive is injected into the concave portion provided in the holder made of silicon that can be ground in the same manner as the semiconductor chip. Part of the adhesive flows into the bottom surface of the second groove, which is the same plane, and the semiconductor chip is assembled into the recess from the front side of the semiconductor chip. After positioning the chip and attaching the semiconductor chip to the recess, the holder incorporating the semiconductor chip is rotated, and the grinding member that presses the semiconductor chip is rotated, and the grinding member presses the back side of the semiconductor chip. In addition, the grinding member grinds the back side of the semiconductor chip, and the grinding member holds the part on the back side of the semiconductor chip that protrudes from the surface of the holder. Grinding until it reaches the front surface of the semiconductor chip, and the grinding member rotates while applying pressure to the front surface side of the holder, so that the grinding member forms the same plane as the front surface of the holder and the hole portion of the holder By grinding the surface side of the holder containing the semiconductor chip, the semiconductor chip can be thinned .

In the invention according to claim 10, when an adhesive is injected into a recess provided on the surface side of the holder, which is made of silicon that can be polished in the same manner as a semiconductor chip, the thickness of the holder extends from the recess. A part of the adhesive flows into the first groove part, and a part of the adhesive is moved from the concave part to the first groove part; Positioning and mounting the semiconductor chip in the concave portion of the holder with the back surface of the semiconductor chip in the same direction as the front surface of the holder by incorporating, rotating the holder incorporating the semiconductor chip, and While rotating the polishing member that applies pressure to the semiconductor chip, by applying pressure to the back side of the semiconductor chip by the polishing member, A first polishing step of polishing the back surface side of the semiconductor chip and polishing the back surface portion of the semiconductor chip protruding from the surface of the holder until the polishing member reaches the surface of the holder; After completion of the first polishing step, the polishing member is formed in the thickness direction of the holder from the back surface side of the semiconductor chip and the holder surface forming the same plane as the front surface of the holder. And a second polishing step of polishing the surface side of the holder including a hole having the same depth as the recess in the same direction as the recess.

Therefore, according to the tenth aspect of the present invention, the adhesive is injected into the concave portion provided in the holder, which is made of silicon that can be polished in the same manner as the semiconductor chip, and first from the concave portion along the thickness direction of the holder. Part of the adhesive flows into the groove, the semiconductor chip is assembled into the recess from the front side of the semiconductor chip, the semiconductor chip is positioned in the recess of the holder with the back surface of the semiconductor chip in the same direction as the front surface of the holder, After attaching to the recess, the back side of the semiconductor chip is rotated by rotating the holder incorporating the semiconductor chip and rotating the polishing member that applies pressure to the semiconductor chip while pressing the back side of the semiconductor chip by the polishing member. The polishing member reaches the surface of the holder on the back side of the semiconductor chip protruding from the surface of the holder. Further, the polishing member is rotated while applying pressure to the front surface side of the holder, so that the polishing member has a back surface side of the semiconductor chip that forms the same plane as the front surface of the holder and the holder including the hole portion of the holder. By polishing the surface side, the semiconductor chip can be thinned.

Furthermore, in the invention described in claim 11, when the adhesive is injected into the concave portion provided on the surface side of the holder, which is made of silicon that can be polished in the same manner as the semiconductor chip, the concave portion of the concave portion is introduced from the bottom surface portion of the concave portion. A part of the adhesive flows into the bottom surface of the second groove, which is flush with the bottom, and a part of the adhesive is moved from the recess to the second groove; Positioning the semiconductor chip in the recess of the holder by attaching the semiconductor chip from the front surface side of the semiconductor chip so that the back surface of the semiconductor chip is in the same direction as the front surface of the holder; While rotating the holder that has been incorporated, and rotating the polishing member that applies pressure to the semiconductor chip, the polishing member backs the semiconductor chip. By pressing the side, the back side of the semiconductor chip is polished, and the polishing member reaches the surface of the holder at the back side of the semiconductor chip protruding from the surface of the holder. And a first polishing step for polishing.

Therefore, according to the eleventh aspect of the present invention, the adhesive is injected into the concave portion provided in the holder, which is made of silicon that can be polished in the same manner as the semiconductor chip, and the bottom surface portion of the concave portion is formed from the bottom surface portion of the concave portion. Part of the adhesive flows into the bottom surface of the second groove, which is the same plane, and the semiconductor chip is assembled into the recess from the front side of the semiconductor chip. After positioning the chip and attaching the semiconductor chip to the recess, the holder incorporating the semiconductor chip is rotated, and the polishing member that presses the semiconductor chip is rotated, and the polishing member presses the back side of the semiconductor chip. In addition, the back surface side of the semiconductor chip is polished, and the polishing member holds the back surface portion of the semiconductor chip protruding from the front surface of the holder. It enables thinning of the semiconductor chip by grinding until it reaches to the surface of the chromatography.

According to the twelfth aspect of the present invention, when an adhesive is injected into the concave portion provided on the surface side of the holder, which is made of silicon that can be polished in the same manner as a semiconductor chip, the concave portion A part of the adhesive flows into the bottom surface of the second groove, which is flush with the bottom, and a part of the adhesive is moved from the recess to the second groove; Positioning the semiconductor chip in the recess of the holder by attaching the semiconductor chip from the front surface side of the semiconductor chip so that the back surface of the semiconductor chip is in the same direction as the front surface of the holder; The back surface of the semiconductor chip is rotated by the polishing member while rotating the embedded holder and rotating the polishing member that presses the semiconductor chip. The back surface side of the semiconductor chip is polished by applying pressure to the surface, and the back surface side portion of the semiconductor chip protruding from the front surface of the holder is polished until the polishing member reaches the front surface of the holder. A first polishing step, and after completion of the first polishing step, the polishing member forms the same plane as the surface of the holder by the polishing member from the back surface side of the semiconductor chip and the holder from the surface of the holder. A second polishing step of polishing the surface side of the holder including a hole having the same depth as the recess in the same direction as the recess provided in the thickness direction of the holder. It is characterized by.

Therefore, according to the twelfth aspect of the present invention, the adhesive is injected into the concave portion provided in the holder made of silicon that can be polished in the same manner as the semiconductor chip, and the bottom surface portion of the concave portion and the bottom surface portion of the concave portion are Part of the adhesive flows into the bottom surface of the second groove, which is the same plane, and the semiconductor chip is assembled into the recess from the front side of the semiconductor chip. After positioning the chip and attaching the semiconductor chip to the recess, the holder incorporating the semiconductor chip is rotated, and the polishing member that presses the semiconductor chip is rotated, and the polishing member presses the back side of the semiconductor chip. In addition, the back surface side of the semiconductor chip is polished, and the polishing member holds the back surface portion of the semiconductor chip protruding from the front surface of the holder. The surface of the semiconductor chip is polished until it reaches the surface of the surface, and the polishing member rotates while applying pressure to the surface of the holder so that the polishing member forms the same plane as the surface of the holder. By polishing the surface side of the holder including the portion, the semiconductor chip can be thinned.

  According to the present invention, a recess is formed in the thickness direction of the holder from the surface of the holder, and the semiconductor chip is positioned in the recess to position the semiconductor chip, and the semiconductor chip is fixed to the recess of the holder and protrudes from the surface of the holder. The semiconductor chip can be thinned by grinding or polishing the back side of the semiconductor chip. Further, since the semiconductor chip is incorporated in the recess of the holder, the side surface of the semiconductor chip is surrounded by the side surface (wall surface) of the recess, and the back side of the semiconductor chip protruding from the surface of the holder is ground. Alternatively, it is possible to prevent the deformation of the side surface portion of the semiconductor chip caused by pressing the semiconductor chip during polishing.

  Furthermore, since the groove part (the first groove part or the second groove part) that is continuous with the concave part is formed, when the adhesive is injected into the concave part, the adhesive flows through the groove part and more adhesive than necessary enters the concave part. Therefore, it is possible to make uniform the portions protruding from the surfaces of the holders of the plurality of semiconductor chips, which are incorporated in the concave portions of the holder. In addition, the holder is provided with a hole formed in the thickness direction of the holder from the surface of the holder and having the same depth as the recess, and a portion protruding from the holder on the back side of the semiconductor chip is ground or polished. Thus, when measuring the thickness of the thinned semiconductor chip, confirm the thickness of the thinned semiconductor chip by measuring the depth of the hole without directly measuring the thickness of the semiconductor chip. Can do.

It is explanatory drawing of the holder used with the processing apparatus of thinning of the semiconductor chip which is this invention. It is a front view of FIG. It is explanatory drawing which shows the outline of the grinding device which is a processing apparatus of thinning of a semiconductor chip. It is explanatory drawing which shows the outline of the control system of the grinding apparatus shown in FIG. It is explanatory drawing which shows injection | pouring of the adhesive agent to the holder shown in FIG. It is explanatory drawing shown from the cross-sectional direction which follows the AA line of FIG. (A) is explanatory drawing which shows the recessed part and hole part of a holder in which the adhesive agent was inject | poured from the cross-sectional direction which follows an AA line. (B) is explanatory drawing which shows the recessed part and hole part of a holder in which the semiconductor chip was integrated and in which the adhesive agent was inject | poured from the cross-sectional direction which follows an AA line. It is explanatory drawing which shows the state which grinds the semiconductor chip integrated in the holder. It is explanatory drawing shown from the cross-sectional direction in alignment with the AA of FIG. 5 at the time of incorporating a semiconductor chip. (A) is a cross-sectional view taken along the line AA of the concave portion and the hole portion of the holder into which the semiconductor chip is incorporated, in which the back surface side of the semiconductor chip is ground or polished up to the front surface of the holder, and into which the adhesive is injected. It is explanatory drawing shown from a direction. (B) shows the AA line with the recess and the hole of the holder into which the semiconductor chip is incorporated and the adhesive is injected, in which the surface side of the holder is further ground or polished from the state of (a). It is explanatory drawing shown from the cross-sectional direction which follows. It is explanatory drawing which shows the outline of the grinding | polishing apparatus which is a processing apparatus of thinning of a semiconductor chip. It is explanatory drawing which shows the outline of the control system of the grinding | polishing apparatus shown in FIG. It is explanatory drawing which shows the state which grind | polishes the semiconductor chip integrated in the holder. It is explanatory drawing of the holder of the other form used with the processing apparatus of thinning of the semiconductor chip which is this invention. It is a front view of FIG. It is explanatory drawing which shows injection | pouring of the adhesive agent to the holder shown in FIG. It is explanatory drawing shown from the cross-sectional direction which follows the EE line | wire of FIG. (A) is explanatory drawing which shows the recessed part and hole part of a holder in which the adhesive agent was inject | poured from the cross-sectional direction which follows an EE line | wire. (B) is explanatory drawing which shows the recessed part and hole part of a holder in which the adhesive agent was inject | poured and the semiconductor chip was integrated from the cross-sectional direction in alignment with an EE line. It is explanatory drawing which shows the state which grinds the semiconductor chip integrated in the holder. It is explanatory drawing shown from the cross-sectional direction in alignment with the EE line | wire of FIG. 14 at the time of incorporating a semiconductor chip. (A) is a cross-section along the line E-E where the back surface side of the semiconductor chip is ground or polished to the surface of the holder, the semiconductor chip is incorporated, the adhesive is injected, and the concave portion and hole portion of the holder are injected It is explanatory drawing shown from a direction. (B) is a state in which the surface side of the holder is further ground or polished from the state of (a), the semiconductor chip is incorporated, the adhesive is injected, and the concave portion and the hole portion of the holder are changed to the EE line. It is explanatory drawing shown from the cross-sectional direction which follows. It is explanatory drawing which shows the state which grind | polishes the semiconductor chip integrated in the holder. It is explanatory drawing which shows the measuring method of the hole formed in the holder. (A) is explanatory drawing which shows the measuring method of the depth of the hole formed in the holder at the time of grinding or grind | polishing the back surface side of a semiconductor chip to the surface of a holder. (B) is explanatory drawing which shows the measuring method of the depth of the hole formed in the holder when the surface side of a holder is further ground or polished from the state of (a). It is explanatory drawing which shows the grinding process of the conventional semiconductor chip. (A) is explanatory drawing which shows the state which grinds a semiconductor chip with the grinding wheel of a grinding wheel. (B) is explanatory drawing which shows the state which adjusts the clearance gap with the lower surface of a vacuum chuck to z, moves a grinding wheel, and grinds a semiconductor chip.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

(Example 1)
FIG. 1 shows a disc-shaped holder 10 for incorporating a semiconductor chip 3, and the holder 10 is made of the same material as the semiconductor chip 3 to be ground or polished. The holder 10 is made of the same silicon (Si) as the semiconductor chip 3. The holder 10 has a thickness of 0.4 mm to 0.8 mm, and in this example, a thickness of 0.5 mm is used. As shown in FIG. 1, a plurality of recesses 11 are provided on the surface 10 a of the holder 10. In this example, five concave portions 11 are provided, but the number is not limited to five, and any number can be provided.

  Since the semiconductor chip 3 is incorporated in the recess 11, the recess 11 has a size that can accommodate the outer periphery of the semiconductor chip 3. Since the semiconductor chip 3 used in this example has a size of 10 mm × 10 mm, the recess 11 has a size of 10.5 mm × 10.5 mm. The depth of the recess 11 is the thickness of the semiconductor chip 3 formed by grinding the back surface 3b of the semiconductor chip 3. In this example, the depth of the recess 11 is 20 μm, but the depth is particularly limited to 20 μm. For example, it is appropriately set within a range of about 5 μm to 30 μm.

  When the semiconductor chip 3 is mounted on the surface 10a side of the holder 10 and the semiconductor chip 3 is positioned when the semiconductor chip 3 is attached to the holder 10, the recess 11 is a portion of the semiconductor chip 3 that enters from the surface 10a side of the holder 10. It is formed in the thickness direction of the holder 10 from the surface 10 a of the holder 10 so as to surround the periphery and the semiconductor chip 3 protrudes from the surface 10 a of the holder 10.

  As shown in FIG. 1, a groove (first groove) 13 is formed on the bottom surface 12 of the recess 11. The groove portion 13 is formed by extending from the bottom surface portion 12 of the recess 11 along the thickness direction of the holder 10 from the bottom surface portion 12 of the recess 11 and continuing to the bottom surface portion 12 of the recess 11. In this example, the groove 13 extends along the wall surface 11 a of the recess 11. Specifically, the wall surface 11 a of the recess 11 is formed to extend along the thickness direction of the holder 10 by the same length as the wall surface 11 a of the recess 11. In this example, as shown in FIG. 1, the groove 13 extends along the thickness direction of the holder 10 from the pair of opposing wall surfaces 11 a of the bottom surface 12.

  The groove 13 is not limited to such a shape. For example, the groove 13 extends from the bottom surface 12 along the thickness direction of the holder 10 so as to cross the bottom surface 12 (in a cross shape with respect to the bottom surface 12). It may be the case. That is, the groove portion 13 may be any shape that is continuous with the bottom surface portion 12 from the bottom surface portion 12 of the recess portion 11 and extends along the thickness direction of the holder 10 from the bottom surface portion 12. Moreover, in this example, although the groove part 13 extended along the thickness direction of the holder 10 from the bottom face part 12 is formed in two places, it is a case where it forms in one place, without being limited to forming in two places. It is also possible to form three or more locations.

  In this example, the width of the groove 13 (the length along the direction of the bottom surface 12) is 20 μm. However, the width is not limited to 20 μm, and the width can be set wider than 20 μm or set narrower. It is also possible. In this example, the length of the groove portion 13 extending from the bottom surface portion 12 along the thickness direction of the holder 10 extends from the bottom surface portion 12 by 20 μm along the thickness direction of the holder 10. In this example, the holder 10 extends 20 μm in the thickness direction, but is not limited to 20 μm and can be set longer than 20 μm or can be set shorter.

  The adhesive is poured into the groove 13 continuing to the recess 11 (bottom surface 12) before the semiconductor chip 3 is incorporated into the recess 11. That is, when the semiconductor chip 3 is incorporated in the recess 11, the semiconductor chip 3 (the surface 3 a thereof) is fixed to the bottom surface portion 12 of the recess 11. Then, it flows into the groove portion 13 that is continuous with the recess portion 11 (the bottom surface portion 12 thereof) that contacts the semiconductor chip 3. That is, when an unnecessary amount of adhesive flows into the recess 11, the groove 13 flows into the groove 13 without accumulating the adhesive in the recess 11, and a necessary amount of adhesive (the bottom surface portion 12 of the recess 11). It is possible to store only the adhesive) that is placed on the recess 11.

  In addition, as shown in FIG. 1, a hole 14 is formed in the holder 10 between the recesses 11 with the same depth as the recesses 11 formed in the thickness direction of the holder 10 from the surface 10 a of the holder 10. Has been. That is, the hole portion 14 is formed in the same direction as the concave portion 11 with respect to the surface 10a of the holder 10 and at the same depth as the concave portion 11 formed in the thickness direction of the holder 10 from the surface 10a of the holder 10. Has been. In this example, the hole part 14 is formed between the wall surfaces 11a which the recessed parts 11 oppose, as shown in FIG.1 and FIG.2.

  Basically, the hole 14 is formed between the recesses 11, and in addition to the hole 14 (solid line) shown in this example, the opposing wall surfaces of the recesses 11 shown by dotted lines in FIG. It is also possible to form between 11a. However, the position where the hole 14 is formed is not limited to the position sandwiched between the wall surfaces 11a of the recesses 11 as described above. For example, the hole 14 can be formed between the corners 11b of the recesses 11. However, it may be difficult to form the hole 14 between the recesses 11 due to the number of the recesses 11 provided in the holder 10. In that case, the hole 14 can be formed adjacent to the periphery of the holder 10 instead of between the recesses 11.

  That is, the hole 14 can be formed at any location within the holder 10. In this example, the hole 14 is formed as a cylindrical hole shape in the holder 10, but is not particularly limited to a cylindrical hole shape. For example, the hole portion 14 can be a rectangular parallelepiped hole shape, and the hole shape is not particularly limited. Furthermore, the diameter of the hole 14 can be in the range of 10 μm to 1000 μm (1 mm). In this example, the diameter of the hole 14 is 500 μm.

  Since the hole 14 is formed at the same depth as the recess 11 formed in the thickness direction of the holder 10 from the surface 10 a of the holder 10, the hole 14 extends from the surface 10 a of the holder 10 of the semiconductor chip 3 incorporated in the recess 11. The thickness of the semiconductor chip 3 when the protruding portion is ground can be confirmed without removing the semiconductor chip 3 incorporated in the recess 11 from the recess. That is, the portion of the semiconductor chip 3 incorporated in the recess 11 that protrudes from the front surface 10 a of the holder 10 is ground so that the ground back surface 3 b of the semiconductor chip 3 (the back surface 3 b of the semiconductor chip 3) matches the front surface 10 a of the holder 10. . As a result, the thickness of the semiconductor chip 3 (the depth in the thickness direction of the holder 10) incorporated in the recess 11 and the depth of the hole 14 (the depth in the thickness direction of the holder 10) match. Thus, the thickness of the semiconductor chip 3 can be confirmed by measuring the depth of the hole 14 (depth in the thickness direction of the holder 10).

  A grinding device 5 which is a processing device for thinning a semiconductor chip including the holder 10 having the above configuration has a configuration shown in FIG. In the grinding device 5, the holder 10 for incorporating the semiconductor chip 3 is incorporated in the table 53 and is connected to a table spindle 54 that rotates the table 53. A grindstone spindle 51 as a grinding means is provided so as to face the holder 10 incorporated in the table 53, and a grindstone as a fixed abrasive for grinding is provided on the table 53 side of the grindstone spindle 51. 52 is provided. As shown in FIG. 3, the grindstone spindle 51 is connected to a support portion 62 that supports the grindstone spindle 51. Then, the grindstone spindle 51 moves together with the support portion 62 by the servo motor 61, so that the grindstone spindle 51 approaches or moves away from the table 53.

  The servo motor 61 is connected to a control unit 55 provided in the grinding device 5 via a servo driver 60, and moves the grinding spindle 51 by driving the servo motor 61 under the control of the control unit 55. become. For example, as shown in FIG. 3, a servo motor 61 is connected to a ball screw 63, and a nut portion 62 a of a support portion 62 that supports the grinding spindle 51 is screwed to the ball screw 63. The support portion 62 can be moved together with the grinding spindle 51 by rotating the ball screw 63 by driving the servo motor 61. As shown in FIG. 4, the grindstone spindle 51 is driven by an inverter motor 59, and the inverter motor 59 is connected to the control unit 55 via a driver 59. The grindstone spindle 51 is rotated by the inverter motor 59 under the control of the control unit 55.

  Further, as shown in FIGS. 3 and 4, the table spindle 54 is driven by an inverter motor 57, and the inverter motor 57 is connected to the control unit 55 via a driver 56. The table spindle 54 is rotated by the inverter motor 57 under the control of the control unit 55. Then, by rotating the table spindle 54 under the control of the control unit 55, the table 53 (holder 10) is rotated, and the grindstone spindle 51 of the grinding means is rotated and moved to the surface 10a side of the holder 10. It is possible to apply pressure to the surface 10a side of the holder 10 and to release the pressure. That is, by moving the grindstone spindle 51 with respect to the table 53 while rotating, the holder 10 is pressed or released.

  A process of thinning the semiconductor chip 3 using the holder 10 incorporating the semiconductor chip 3 in the grinding apparatus 5 having the above configuration will be described.

  First, as shown in FIG. 5, the adhesive 2 is injected into the recess 11 provided in the holder 10 along the arrow B direction. The injected adhesive 2 flows through the bottom surface 12 of the recess 11 and also flows into the groove 13. At this time, as shown in FIG. 6A, the adhesive 2 that cannot be placed on the bottom surface 12 of the recess 11 flows into the groove 13. Then, in a state where the adhesive 2 is thinly applied uniformly to the bottom surface portion 12 of the recess 11 and the adhesive 2 that has not been applied flows into the groove 13, the semiconductor chip 3 is recessed as shown in FIG. 11 is incorporated. At this time, the thickness of the semiconductor chip 3 is longer than the depth of the recess 11.

  When the semiconductor chip 3 is assembled, the semiconductor chip 3 is positioned from the surface 3a of the semiconductor chip 3 on which the elements and the like are formed to the recess 11, and the surface 3a of the semiconductor chip 3 is bonded to the bottom surface 12 of the recess 11. 2 is fixed (attached). By positioning and fixing the semiconductor chips 3 in this manner, the positions of the back surfaces 3b of the plurality of semiconductor chips 3 are the same (the heights of the back surfaces 3b of the plurality of semiconductor chips 3 from the front surface 10a of the holder 10 are the same). ). When the semiconductor chip 3 is thus positioned in the recess 11, the back surface 3 b of the semiconductor chip 3 faces the same side as the front surface 10 a of the holder 10, and the back surface 3 b side of the semiconductor chip 3 is the front surface 10 of the holder 10. It will be more prominent.

  By incorporating the semiconductor chip 3 into the recess 11, as shown in FIG. 6B, the periphery of the portion of the semiconductor chip 3 entering from the surface 10a side of the holder 10 is surrounded, and the semiconductor chip 3 is oriented in the direction of the side surface 3c. It is possible to restrict the movement of the semiconductor chip 3 from the positioning position by the wall surface 11a of the recess 11 even if a pressure is applied from the position. In addition, since the side surface 3c of the semiconductor chip 3 (the portion of the semiconductor chip 3 entering from the surface 10a side of the holder 10) is surrounded by the wall surface 11a of the recess 11, a pressure is applied in the direction of the side surface 3c of the semiconductor chip 3. In addition, it is possible to prevent the deformation of the side surface 3c due to the pressing to the side surface 3c of the semiconductor chip 3.

  Next, the table 53 is rotated under the control of the control unit 55 to rotate the holder 10 in which the semiconductor chip 3 is incorporated, and the grindstone spindle 51 that is a disk-shaped member for applying pressure to the semiconductor chip 3 is rotated. While moving toward the table 53, the grindstone spindle 51 is brought into contact with the holder 10, and the pressing by the grindstone spindle 51 against the holder 10 is controlled by the control unit 55. Specifically, as shown in FIG. 7, the holder 10 incorporating the semiconductor chip 3 is positioned so as to face the grindstone spindle 51, and the holder 10 (table 53) is moved in the direction of arrow C by the control of the control unit 55. While rotating, the grindstone spindle 51 is similarly rotated in the direction of arrow C, and the grindstone spindle 51 is moved to contact the back surface 3b side of the semiconductor chip 3, thereby pressing the holder 10 and controlling the pressure. In FIG. 7, in order to clarify the relationship between the grindstone spindle 51 and the holder 10, the table 53 in which the holder 10 is incorporated is omitted.

  The grindstone spindle 51 abuts on the back surface 3b side of the semiconductor chip 3 and rotates while applying pressure, whereby the back surface 3b side of the semiconductor chip 3 is ground. Under the control of the control unit 55, the grinding wheel spindle 51 continues to apply pressure to the back surface 3 b side of the semiconductor chip 3, thereby continuing grinding of the back surface 3 b side of the semiconductor chip 3 by the grinding wheel spindle 51 and protruding from the front surface 10 a of the holder 10. The back surface 3 b side of the semiconductor chip 3 is ground, and the grindstone spindle 51 reaches the front surface 10 a of the holder 10. The thickness of the semiconductor chip 3 at this time is the same as the depth of the hole 14 formed at the same depth as the recess 11 formed in the holder 10 in advance as shown in FIG. Therefore, the thickness of the semiconductor chip 3 can be confirmed by measuring the depth of the hole 14 without removing the semiconductor chip 3 from the holder 10.

  Further, when it is necessary to reduce the thickness of the semiconductor chip 3, the back surface 3 b side of the semiconductor chip 3 is further ground by the grindstone spindle 51. Specifically, the grindstone spindle 51 rotates from the state in which the grindstone spindle 51 polishes the back surface 3b side of the semiconductor chip 3 protruding from the front surface 10a of the holder 10 and the grindstone spindle 51 reaches the front surface 10a of the holder 10. The surface 10a side of the holder 10 is ground by rotating the holder 10 including the semiconductor chip 3 while applying pressure. That is, the grindstone spindle 51 rotates while applying pressure to the front surface 10 a side of the holder 10, so that the grindstone spindle 51 and the back surface 3 b side of the semiconductor chip 3 having the same height as the front surface 10 a of the holder 10 and the hole 14 of the holder 10. The surface 10a side of the holder 10 including the above is ground. As a result, as shown in FIG. 8B, the front surface 10a of the holder 10 is ground, the back surface 3b side of the semiconductor chip 3 is ground, and the hole portion 14 is also ground.

  As a result, the thickness of the holder 10 is reduced as shown in FIGS. 8A to 8B. That is, from the state in which the front surface 10a of the holder 10 and the back surface 3b of the semiconductor chip 3 form the same plane as shown in FIG. 8A, the same plane of the front surface 10a of the holder 10 and the back surface 3b of the semiconductor chip 3 is formed. By maintaining the above state and grinding the surface 10a side of the holder 10, the surface 10 of the holder 10 is ground, and the back surface 3b and the hole 14 of the semiconductor chip 3 are ground. By the grinding, the thickness t of the holder 10 shown in FIG. 8A is changed to the thickness t ′ of the holder 10 shown in FIG. 8B, and the thickness of the holder 10 is reduced.

  In the measurement of the thickness of the semiconductor chip 3 ground as described above, the hole 14 (the surface 10a of the holder 10) having the same depth as the depth of the recess 11 in which the semiconductor chip 3 is incorporated is also ground. The thickness of the semiconductor chip 3 can be confirmed by measuring the depth of the hole 14. As a result of the measurement, when the thickness of the semiconductor chip 3 has not reached the target value, the grindstone is again again from the state where the grindstone spindle 51 has reached the surface 10a of the holder 10 (from the abutted state). The spindle 51 rotates while applying pressure to the surface 10a side of the holder 10 including the semiconductor chip 3 to grind the surface 10a side of the holder 10. After grinding, the thickness of the semiconductor chip 3 is confirmed by measuring the depth of the hole 14 again. The above is the grinding for thinning the semiconductor chip 3 by incorporating the semiconductor chip 3 into the holder 10 in the grinding apparatus.

(Example 2)
In Example 2, polishing for thinning the semiconductor chip 3 using the polishing apparatus 7 which is a processing apparatus for thinning a semiconductor chip using the holder 10 incorporating the semiconductor chip 3 shown in Example 1 will be described. In the polishing apparatus 7, as shown in FIG. 9, the holder 10 for incorporating the semiconductor chip 3 is incorporated in the pressure head 70 and is connected to a pressure head spindle 74 that rotates the pressure head 70. . Further, a polishing surface plate 72 as a polishing means is provided so as to face the holder 10 incorporated in the pressure head 70, and the pressure plate 70 side of the polishing surface plate 72 is for polishing. A polishing surface 71 is formed (a polishing cloth can be installed as the polishing surface 71). Then, the polishing platen 72 (polishing surface 71) is supplied with an abrasive that is free abrasive grains for polishing. That is, in the polishing, the semiconductor chip 3 is performed with the polishing surface plate 72 (polishing surface 71) and the abrasive. As shown in FIG. 9, the pressure head 70 is connected to a support portion 83 that supports the pressure head 70. Then, the pressurization head 70 moves together with the support portion 83 by the servo motor 77, so that the pressurization head 70 approaches or moves away from the polishing surface plate 72 (polishing surface 71).

  As shown in FIG. 10, the servo motor 77 is connected to a control unit 75 provided in the polishing apparatus 7 via a servo driver 76, and the servo motor 77 is driven by the control of the control unit 75. The pressure head 70 is moved. For example, as shown in FIG. 10, a servo motor 77 is connected to a ball screw 84, and a nut portion 83 a of a support portion 83 that supports the pressure head 70 is screwed to the ball screw 84. The support 83 and the pressure head 70 can be moved by rotating the ball screw 84 by driving the servo motor 77. Also, as shown in FIG. 10, the pressure head 70 is driven by a servo motor 79, and the servo motor 79 is connected to a control unit 75 via a servo driver 59. Then, under the control of the control unit 75, the pressurizing head 70 is rotated by the servo motor 79.

  Further, as shown in FIGS. 9 and 10, the polishing surface plate spindle 73 is driven by a servo motor 82, and the servo motor 82 is connected to a control unit 75 via a servo driver 81. Under the control of the control unit 75, the polishing surface plate spindle 73 (polishing surface plate 72) is rotated by the servo motor 82. Then, the polishing platen 72 (holder 10) is rotated by rotating the polishing platen spindle 73 under the control of the control unit 75, and the holder is rotated while the polishing platen 72 (polishing surface 71) of the polishing means is rotated. It is possible to apply pressure to the surface 10a side of 10 and to release the pressure. That is, by moving the pressure head 70 with respect to the polishing surface plate 72 (polishing surface 71) while rotating the polishing surface plate 72 (polishing surface 71), the holder 10 is pressed or released. Become. In this example, the pressurizing head 70 is rotated and moved by servo motors 77 and 79, and the polishing surface plate 72 (polishing surface plate spindle 73) is rotated by a servo motor 82. It is also possible to move the polishing plate by an air cylinder or the like and rotate the polishing platen 72 (polishing platen spindle 73) by an inverter motor.

  A process of thinning the semiconductor chip 3 using the holder 10 incorporating the semiconductor chip 3 shown in Example 1 in the polishing apparatus 7 having the above configuration will be described.

  First, as in Example 1, as shown in FIG. 5, the adhesive 2 is injected into the recess 11 provided in the holder 10 along the arrow B direction. As shown in FIG. 6A, the adhesive 2 that cannot fit on the bottom surface portion 12 of the recess 11 flows into the groove portion 13, and the thin adhesive 2 is uniformly applied to the bottom surface portion 12 of the recess 11. Next, as shown in FIG. 6 (b), the semiconductor chip 3 is positioned by incorporating it into the recess 11 from the surface 3 a of the semiconductor chip 3 on which an element or the like is formed, and the surface 3 a of the semiconductor chip 3 is positioned at the bottom of the recess 21. It is fixed (attached) to the part 12 from the adhesive 2. As a result, the wall surface 11 a of the recess 11 surrounds the periphery of the portion of the semiconductor chip 3 that has entered from the surface 10 a side of the holder 10. Then, the back surface 3 b of the semiconductor chip 3 faces the same side as the front surface 10 a of the holder 10, and the thickness of the semiconductor chip 3 is longer than the length of the recess 11, so the back surface 3 b side of the semiconductor chip 3 is the front surface of the holder 10. 10 will protrude.

  Next, under the control of the control unit 75 to rotate the holder 10 incorporating the semiconductor chip 3, while rotating the pressure head 70 and rotating the polishing surface plate 72 for applying pressure to the semiconductor chip 3, The pressure head 70 is moved toward the polishing surface plate 72, the holder 10 in the pressure head 70 is brought into contact with the polishing surface plate 72 (the polishing surface 71 thereof), and the pressing by the polishing surface plate 72 against the holder 10 is performed. Control is performed by the control unit 75. Specifically, as shown in FIG. 11, the polishing surface plate 72 and the holder 10 incorporating the semiconductor chip 3 are positioned so as to face each other, and the holder 10 (pressure head 70) is controlled by the control unit 75. While rotating in the direction of arrow D, the polishing surface plate 72 is also rotated in the direction of arrow D, and the abrasive is supplied along the direction of arrow G onto the polishing surface 71 of the polishing surface plate 72 under the control of the control unit 75. Then, the holder 10 is moved, and the back surface 3b side of the semiconductor chip 3 is pressed against the holder 10 from the polishing surface plate 72 by sandwiching and contacting the polishing agent 71 with the polishing surface 71 of the polishing surface plate 72. To control. In FIG. 11, in order to clarify the relationship between the polishing surface plate 72 and the holder 10, the description of the pressure head 70 in which the holder 10 is incorporated is omitted.

  Pressure is applied to the polishing surface plate 72 from the side of the rotating holder 10 in which the semiconductor chip 3 is incorporated, and the polishing surface plate 72 is connected to the polishing surface 71 of the polishing surface plate 72 and the back surface 3b of the semiconductor chip 3 (holder 10). The back surface 3b side of the semiconductor chip 3 is polished by rotating while applying pressure to the semiconductor chip 3 (holder 10) through the polishing agent between them. Furthermore, by continuing to apply pressure from the holder 20 to the polishing surface plate 72 (by continuing to apply pressure from the polishing surface plate 72 to the back surface 3b side of the semiconductor chip 3), the polishing surface 71 of the polishing surface plate 72 and the polishing surface plate 72 are fixed. The polishing on the back surface 3b side of the semiconductor chip 3 is continued by the abrasive between the polishing surface 71 of the board 72 and the back surface 3b of the semiconductor chip 3, and the back surface 3b side of the semiconductor chip 3 protruding from the front surface 10a of the holder 10 is polished. The polishing surface 71 of the polishing surface plate 72 reaches the surface 10 a of the holder 10. The thickness of the semiconductor chip 3 at this time is the same as the depth of the hole 14 formed at the same depth as the recess 11 formed in the holder 10 in advance as shown in FIG. Therefore, the thickness of the semiconductor chip 3 can be confirmed by measuring the depth of the hole 14 without removing the semiconductor chip 3 from the holder 10.

  Further, when it is necessary to reduce the thickness of the semiconductor chip 3, the back surface 3 b side of the semiconductor chip 3 is further removed by the polishing surface plate 72 using an abrasive between the polishing surface 71 of the polishing surface plate 72 and the holder 10. Grind. Specifically, from the state where the polishing surface 71 of the polishing surface plate 72 reaches the surface 10 a of the holder 10, the polishing surface plate 72 rotates while applying pressure to the holder 10 including the semiconductor chip 3. By doing so, the surface 10a side of the holder 10 is polished. That is, the polishing surface 71 of the polishing surface plate 72, and the polishing agent between the polishing surface 71 of the polishing surface plate 72 and the back surface 3 b (holder 10) of the semiconductor chip 3 are the surface 10 a of the holder 10. The surface 10a side of the holder 10 including the back surface 3b side of the semiconductor chip 3 having the same height as the surface 10a of the holder 10 and the hole portion 14 of the holder 10 is polished. As a result, as shown in FIG. 6B, the front surface 10a of the holder 10 is polished, the back surface 3b side of the semiconductor chip 3 is polished, and the hole 14 is also polished.

  As a result, the thickness of the holder 10 is reduced as shown in FIGS. 6 (a) to 6 (b). That is, from the state where the surface 10a of the holder 10 and the back surface 3b of the semiconductor chip 3 form the same plane as shown in FIG. 6A, the same plane of the front surface 10a of the holder 10 and the back surface 3b of the semiconductor chip 3 is formed. By polishing the surface 10a side of the holder 10 while maintaining the above state, the surface 10 of the holder 10 is polished, and the back surface 3b and the hole 14 of the semiconductor chip 3 are polished. By the polishing, the thickness t of the holder 10 shown in FIG. 6A is changed to the thickness t ′ of the holder 10 shown in FIG. 6B, and the thickness of the holder 10 is reduced.

  The thickness of the semiconductor chip 3 incorporated in the thinned holder 10 polished as described above is measured by polishing the hole 14 having the same depth as the recess 11 in which the semiconductor chip 3 is incorporated. Therefore, the thickness of the semiconductor chip 3 can be confirmed by measuring the depth of the hole portion 14. If the thickness of the semiconductor chip 3 does not reach the target value as a result of the measurement, the control unit 75 controls the holder 10 in which the semiconductor chip 3 is incorporated while rotating the holder 10 again. A pressure is applied to the polishing surface plate 72 from the front surface 10a side, and the polishing surface plate 72 is connected to the polishing surface 71 of the polishing surface plate 72, the polishing surface 71 of the polishing surface plate 72, and the back surface 3b (holder 10) of the semiconductor chip 3. By rotating the semiconductor chip 3 (holder 10) while applying pressure to the semiconductor chip 3 in between, the front surface 10 of the holder 10 is polished, whereby the back surface 3b and the hole 14 of the semiconductor chip 3 are polished. After polishing, the thickness of the semiconductor chip 3 is confirmed by measuring the depth of the hole 14. The above is the polishing for thinning the semiconductor chip 3 by incorporating the semiconductor chip 3 into the holder 10 in the polishing apparatus 7.

(Example 3)
FIG. 12 shows a disk-shaped holder 20 similar to FIG. 1, which is made of the same material as the semiconductor chip 3 to be ground. In this example, as in Example 1, the disk-shaped holder 20 is It is made of the same silicon (Si) as the semiconductor chip 3. The holder 20 has a thickness of 0.4 mm to 0.8 mm. In this example, a thickness of 0.5 mm is used as in Example 1. As shown in FIG. 8, a plurality of recesses 21 are provided on the surface 20 a of the holder 20. In this example, five recesses 21 are provided as in Example 1, but any number of recesses 21 can be provided without being limited to five.

  Since the semiconductor chip 3 is incorporated into the recess 21 as in FIG. 1, the recess 21 has a size that can accommodate the outer periphery of the semiconductor chip 3. Since the semiconductor chip 3 used in this example has a size of 10 mm × 10 mm as in FIG. 1, the recess 11 has a size of 10.5 mm × 10.5 mm. The depth of the recess 21 (the length extending from the front surface 20a of the holder 20 along the thickness direction of the holder 20) is the thickness of the semiconductor chip 3 formed by grinding the back surface 3b of the semiconductor chip 3. In this example, the depth of the concave portion 21 is set to 20 μm as in FIG. 1, but is not particularly limited to 20 μm, and is appropriately set within a range of, for example, about 5 μm to 30 μm.

  Unlike the groove 13 in FIG. 1, the groove (second groove) 23 formed in the recess 21 is formed so as to connect all the recesses 21 formed on the holder 20. The groove 23 is formed between the adjacent recesses 21 along the thickness direction of the holder 20 from the surface 20 a of the holder 20, and the bottom surface 25 connecting the adjacent recesses 21 is connected to the bottom 22 of the recess 21. The same plane is formed. In this example, the groove 23 is formed to the same depth as the depth of the recess 21 (length in the thickness direction of the holder 20) (the same plane as the bottom surface 22 of the recess 21 and the bottom surface 25 of the groove 23). The groove 23 is formed so as to penetrate through the side portions (wall surface 21a) facing each other between the adjacent recesses 21a.

  In the groove portion 23 of this example, the groove portion 23 is formed in a straight line between the side surface portions (wall surface 21a) facing each other between the adjacent recess portions 21a so as to penetrate the side surface portion (wall surface 21a) of the recess portion 21. Yes. However, the groove 23 is not limited to such a shape as long as it can connect all the recesses 21 formed in the holder 20. For example, it is also possible to form the groove portion 23 between the side portions (wall surface 21a) facing each other between the adjacent recess portions 21a so as to penetrate the side surface portion (wall surface 21a) of the recess portion 21. Moreover, it is also possible to penetrate through the side surface (wall surface 21a) of the recess 21 by forming a plurality of groove portions 23 between the side surfaces (wall surface 21a) facing each other between the adjacent recesses 21a.

  In this example, the width of the groove portion 23 (the length along the bottom surface portion 22) is 500 μm. However, the width is not limited to 500 μm, and the width can be set wider than 500 μm or set narrower. Is also possible. In this example, the length (depth) of the groove 23 extending from the surface 20 a of the holder 20 along the thickness direction of the holder 20 is the same as the depth of the recess 21. Thus, in this example, although the depth of the recessed part 21 and the groove part 23 is the same, it is not limited to being the same, It is also possible to make the depth of the recessed part 21 deeper than the depth of the groove part 23. In addition, the depth of the recess 21 can be made shallower than the depth of the groove 23.

  As in FIG. 1, the adhesive is poured into the groove 23 continuing to the concave portion 21 (bottom surface portion 22) before the semiconductor chip 3 is incorporated into the concave portion 21. That is, when the semiconductor chip 3 is incorporated into the recess 21, the semiconductor chip 3 is fixed to the bottom surface portion 22 of the recess 21. In this example, since all the concave portions 21 are connected by the groove portion 23, the bottom surface portion 22 of the concave portion 21 and the bottom surface portion 25 of the groove portion 23 are continuous, and the adhesive is transferred to the bottom surface portion 22 of the concave portion 21. When flowing, the adhesive will flow to the bottom surface portions 22 of all the recesses 21 through the bottom surface portion 25 of the groove portion 23. As a result, an adhesive is applied to all of the bottom surface portion 22 of the recess 21, and the semiconductor chip 3 can be fixed to the bottom surface portion 22 of the recess 21.

  As in FIG. 1, in the holder 20, as shown in FIG. 12, between the recesses 21, the same depth as the recess 21 formed in the thickness direction of the holder 20 from the surface 20 a of the holder 20. A hole 24 is formed. The hole 24 is formed in the same direction as the concave portion 21 with respect to the surface 20 a of the holder 20 and at the same depth as the concave portion 21 formed in the thickness direction of the holder 20 from the surface 20 a of the holder 20. Yes. In this example, as shown in FIGS. 12 and 13, the hole 24 is formed between the opposing wall surfaces 21 a of the recesses 21.

  Basically, the hole 24 is formed between the recesses 21, and in addition to the hole 24 (solid line) shown in this example, the opposing wall surfaces of the recesses 21 shown by dotted lines in FIG. It is also possible to form between 21a. In this example, as shown in FIGS. 12 and 13, the hole 24 is formed between the corners 21 b of the recesses 21. Basically, the hole 24 is formed between the recesses 21, and in addition to the hole 24 (solid line) shown in this example, the opposing wall surfaces of the recesses 21 shown by dotted lines in FIG. It is also possible to form between 21a.

  However, the position where the hole 24 is formed is not limited to the position between the wall surfaces 21a of the recesses 21 as described above. For example, the hole 24 can be formed between the corners 21b of the recesses 21. However, depending on the number of recesses 21 provided in the holder 20, it may be difficult to form the hole 24 between the recesses 21. In that case, the hole 24 can be formed adjacent to the periphery of the holder 20 instead of between the recesses 21.

  That is, the hole 24 can be formed at any location within the holder 20. Further, in this example, as in Example 1, the hole 24 is formed in the holder 20 as a cylindrical hole shape, but is not particularly limited to a cylindrical hole shape. For example, the hole 24 can be a rectangular parallelepiped hole. For example, the hole portion 24 can be a rectangular parallelepiped hole shape, and the hole shape is not particularly limited. Furthermore, the diameter of the hole 24 can be in the range of 10 μm to 1000 μm (1 mm). In this example, the diameter of the hole 24 is 500 μm.

  As in Example 1, the hole 24 is formed at the same depth as the recess 21 formed in the thickness direction of the holder 20 from the surface 20a of the holder 20, and the holder of the semiconductor chip 3 incorporated in the recess 21 The thickness of the semiconductor chip 3 when the portion protruding from the surface 20a of the semiconductor 20 is ground can be confirmed without removing the semiconductor chip 3 incorporated in the recess 21 from the recess 21. That is, the portion of the semiconductor chip 3 incorporated in the recess 21 that protrudes from the surface 20 a of the holder 20 is ground, and the ground surface of the semiconductor chip 3 (the back surface 3 b of the semiconductor chip 3) is made to coincide with the surface 20 a of the holder 20. As a result, the thickness of the semiconductor chip 3 (the depth in the thickness direction of the holder 20) incorporated in the recess 21 and the depth of the hole 24 (the depth in the thickness direction of the holder 20) match. Thus, the thickness of the semiconductor chip 3 can be confirmed by measuring the depth of the hole 24 (depth in the thickness direction of the holder 20).

  The grinding device 5 that is a processing device for thinning a semiconductor chip including the holder 20 having the above-described configuration is the same as the grinding device 5 shown in Example 1. Similar to Example 1, the holder 20 incorporating the semiconductor chip 3 is incorporated in the table 53. In the following, a process for thinning the semiconductor chip 3 incorporated in the holder 20 in the grinding apparatus 5 will be described.

  First, as shown in FIG. 14, the adhesive 2 is injected into the recess 21 provided in the holder 20 along the direction of arrow F. The injected adhesive 2 flows through the bottom surface portion 22 of the recess 21 and flows into the groove portion 23. That is, as shown in FIG. 15A, the adhesive 2 protruding from the bottom surface portion 22 of the recess 21 flows into the groove portion 23. Then, the adhesive 2 is thinly applied uniformly to the bottom surface 22 of the recess 21, and the adhesive 2 is thinly uniformly applied to the bottom 25 of the groove 23. In this example, since the bottom surface portion 22 of the recess 21 and the bottom surface portion 25 of the groove portion 23 are formed to be in the same plane, the adhesive 2 has a uniform height as shown in FIG. It is formed as two layers of adhesive at (height with respect to the bottom surface portion 22 and the bottom surface portion 25).

  Then, as shown in FIG. 15B, the semiconductor chip 3 is incorporated into the recess 21. At this time, the thickness of the semiconductor chip 3 is longer than the depth of the recess 21. When the semiconductor chip 3 is incorporated, as in Example 1, the semiconductor chip 3 is incorporated into the recess 21 from the surface 3a of the semiconductor chip 3 on which an element or the like is formed, and the semiconductor chip 3 is positioned, and the surface 3a of the semiconductor chip 3 is inserted into the recess 21. It adheres (attaches) to the bottom surface portion 12 of the adhesive 2 from the adhesive 2. By positioning and fixing the semiconductor chips 3 in this manner, the positions of the back surfaces 3b of the plurality of semiconductor chips 3 become the same (the heights of the back surfaces 3b of the plurality of semiconductor chips 3 from the front surface 20a of the holder 20 are the same). Become). When the semiconductor chip 3 is thus positioned in the recess 21, the back surface 3 b of the semiconductor chip 3 faces the same side as the front surface 20 a of the holder 20, and the back surface 3 b side of the semiconductor chip 3 is the front surface 20 a of the holder 20. It will be more prominent.

  By incorporating the semiconductor chip 3 into the recess 21, as shown in FIG. 15B, the periphery of the portion of the semiconductor chip 3 entering from the surface 20a side of the holder 20 is surrounded, and the semiconductor chip 3 is oriented in the side surface 3c direction. Even if a pressure is applied from above, the movement of the semiconductor chip 3 from the positioning position can be restricted by the wall surface 21a (see FIG. 13) of the recess 21. Further, since the side surface 3c of the semiconductor chip 3 (the portion of the semiconductor chip 3 that has entered from the surface 20a side of the holder 20) is surrounded by the wall surface 21a of the recess 21, a pressure is applied in the direction of the side surface 3c of the semiconductor chip 3. In addition, it is possible to prevent deformation due to pressing of the side surface 3 c of the semiconductor chip 3.

  Next, the table 53 is rotated under the control of the control unit 55 to rotate the holder 20 in which the semiconductor chip 3 is incorporated, and a disk-shaped member for applying pressure to the semiconductor chip 3 is fixed for grinding. The grindstone spindle 51 provided with the grindstone 52 that is an abrasive grain is moved toward the table 53 while rotating, the grindstone spindle 51 is brought into contact with the holder 20, and the pressing by the grindstone spindle 51 to the holder 20 is controlled by the control unit 55. To do. Specifically, as shown in FIG. 16, the holder 20 incorporating the semiconductor chip 3 is positioned so as to face the grindstone spindle 51, and the holder 20 (table 53) is moved in the arrow C direction under the control of the control unit 55. While rotating, the grindstone spindle 51 is also rotated in the direction of the arrow C, and the grindstone spindle 51 is moved and brought into contact with the back surface 3b side of the semiconductor chip 3, thereby applying pressure to the holder 20 and controlling the pressure. In FIG. 16, in order to clarify the relationship between the grindstone spindle 51 and the holder 20, the description of the table 53 in which the holder 20 is incorporated is omitted.

  The grindstone spindle 51 abuts on the back surface 3b side of the semiconductor chip 3 and rotates while applying pressure, whereby the back surface 3b side of the semiconductor chip 3 is ground. Under the control of the control unit 55, the grinding wheel spindle 51 continues to apply pressure to the back surface 3 b side of the semiconductor chip 3, thereby continuing grinding of the back surface 3 b side of the semiconductor chip 3 by the grinding wheel spindle 51 and protruding from the front surface 20 a of the holder 20. The back surface 3 b side of the semiconductor chip 3 is ground, and the grindstone spindle 51 reaches the front surface 20 a of the holder 20. The thickness of the semiconductor chip 3 at this time is the same as the depth of the hole 24 formed at the same depth as the depth of the recess 21 formed in the holder 20 in advance as shown in FIG. Therefore, the thickness of the semiconductor chip 3 can be confirmed by measuring the depth of the hole 24 without removing the semiconductor chip 3 from the holder 20.

  Further, when it is necessary to reduce the thickness of the semiconductor chip 3, the back surface 3 b side of the semiconductor chip 3 is further ground by the grindstone spindle 51. Specifically, the grindstone spindle 51 rotates from the state in which the grindstone spindle 51 grinds the back surface 3b side of the semiconductor chip 3 protruding from the front surface 20a of the holder 20 and the grindstone spindle 51 reaches the front surface 20a of the holder 20. The surface 20a side of the holder 20 is ground by rotating while applying pressure to the holder 20 including the semiconductor chip 3. That is, the grindstone spindle 51 rotates while applying pressure to the front surface 20 a side of the holder 20, so that the grindstone spindle 51 and the hole 24 of the holder 20 and the back surface 3 b side of the semiconductor chip 3 having the same height as the front surface 20 a of the holder 20. The surface 20a side of the holder 20 including the above is ground. As a result, as shown in FIG. 17B, the front surface 20a of the holder 20 is ground, the back surface 3b side of the semiconductor chip 3 is ground, and the hole 24 is also ground.

  As a result, the thickness of the holder 20 is reduced as shown in FIGS. 17 (a) to 17 (b). That is, from the state where the front surface 20a of the holder 20 and the back surface 3b of the semiconductor chip 3 form the same plane as shown in FIG. 17A, the same plane of the front surface 20a of the holder 20 and the back surface 3b of the semiconductor chip 3 is formed. By maintaining the above state and grinding the surface 20a side of the holder 20, the surface 20 of the holder 20 is ground, and the back surface 3b and the hole 24 of the semiconductor chip 3 are ground. The grinding changes the thickness t of the holder 20 shown in FIG. 17A to the thickness t ′ of the holder 20 shown in FIG. 17B, and the thickness of the holder 20 is reduced.

  In the measurement of the thickness of the semiconductor chip 3 ground as described above, the hole 24 (the surface 20a of the holder 20) having the same depth as the depth of the recess 21 in which the semiconductor chip 3 is incorporated is also ground. The thickness of the semiconductor chip 3 can be confirmed by measuring the depth of the hole 24. As a result of the measurement, when the thickness of the semiconductor chip 3 has not reached the target value, the grindstone is again again from the state where the grindstone spindle 51 has reached the surface 20a of the holder 20 (from the abutted state). The spindle 51 rotates while applying pressure to the surface 20a side of the holder 20 including the semiconductor chip 3, so that the surface 20a side of the holder 20 is ground. After grinding, the thickness of the semiconductor chip 3 is confirmed by measuring the depth of the hole 24 again. The above is the grinding for thinning the semiconductor chip 3 by incorporating the semiconductor chip 3 into the holder 20 in the grinding apparatus.

(Example 4)
In Example 4, a process of thinning the semiconductor chip 3 using the polishing apparatus 7 which is a processing apparatus for thinning a semiconductor chip using the holder 20 incorporating the semiconductor chip 3 shown in Example 3 will be described. The polishing apparatus 7 used in Example 4 is the same as the polishing apparatus 7 shown in Example 2. In the polishing apparatus 7, the holder 20 incorporating the semiconductor chip 3 is incorporated in the pressure head 70.

  First, as in Example 3, as shown in FIG. 14, the adhesive 2 is injected into the recess 21 provided in the holder 20 along the arrow F direction. The adhesive 2 flows through the bottom surface portion 22 of the concave portion 21 and also flows into the groove portion 23, so that the adhesive 2 is thinly applied uniformly to the bottom surface portion 22 of the concave portion 21 and thinly applied to the bottom surface portion 25 of the groove portion 23. The adhesive 2 is applied uniformly. In this example, as in Example 3, the adhesive 2 is formed as two layers of adhesive with a uniform height (height relative to the bottom surface portion 22 and the bottom surface portion 25), as shown in FIG. .

  Then, as shown in FIG. 15B, as in Example 3, the semiconductor chip 3 is incorporated into the recess 11 from the surface 3a of the semiconductor chip 3 on which elements and the like are formed, the semiconductor chip 3 is positioned, and the surface 3a of the semiconductor chip 3 is The adhesive 2 is fixed (attached) to the bottom surface 12 of the recess 11. By such positioning and fixing, the positions of the back surfaces 3b of the plurality of semiconductor chips 3 become the same (the heights of the back surfaces 3b of the plurality of semiconductor chips 3 from the front surface 20a of the holder 20 are the same). Also in this case, as in Example 3, the back surface 3b of the semiconductor chip 3 faces the same side as the front surface 20a of the holder 20, and the back surface 3b side of the semiconductor chip 3 protrudes from the front surface 20a of the holder 20. . At this time, the thickness of the semiconductor chip 3 is longer than the depth of the recess 21.

  Similar to Example 2, also in Example 4, a polishing surface plate 72 as a polishing means is provided so as to face the holder 10 incorporated in the pressure head 70, and the pressure head of the polishing surface plate 72 is provided. A polishing surface 71 for polishing is formed on the 70 side (a polishing cloth can be installed as the polishing surface 71). Then, the polishing platen 72 (polishing surface 71) is supplied with an abrasive that is free abrasive grains for polishing. That is, in the polishing, the semiconductor chip 3 is performed with the polishing surface plate 72 (polishing surface 71) and the abrasive.

  Next, under the control of the control unit 75 to rotate the holder 20 incorporating the semiconductor chip 3, while rotating the pressure head 70 and rotating the polishing surface plate 72 for applying pressure to the semiconductor chip 3, The pressure head 70 is moved along the support portion 83, the holder 1 in the pressure head 70 is brought into contact with the polishing surface plate 72 (the polishing surface 71 thereof), and the pressing by the polishing surface plate 72 to the holder 20 is controlled. Control is performed by the unit 75. Specifically, as shown in FIG. 18, the polishing surface plate 72 and the holder 20 incorporating the semiconductor chip 3 are positioned so as to face each other, and the holder 20 is rotated in the arrow D direction under the control of the control unit 75. At the same time, the polishing surface plate 72 is similarly rotated in the direction of arrow D, and the abrasive is supplied along the direction of arrow G onto the polishing surface 71 of the polishing surface plate 72 under the control of the control unit 75, and the holder 20 is moved. Then, the back surface 3b side of the semiconductor chip 3 is pressed against the holder 20 by pressing the polishing platen 72 with the abrasive sandwiched between the holder 20 and the polishing surface 71 of the polishing platen 72 to control the pressing. In FIG. 18, in order to clarify the relationship between the polishing surface plate 72 and the holder 20, the description of the pressure head 70 in which the holder 20 is incorporated is omitted.

  A pressure is applied to the polishing surface plate 72 from the rotating holder 20 side in which the semiconductor chip 3 is incorporated, so that the polishing surface plate 72 has a polishing surface 71 of the polishing surface plate 72 and a polishing surface 71 of the polishing surface plate 72. By rotating while applying pressure to the semiconductor chip 3 (holder 20) through an abrasive between the semiconductor chip 3 and the back surface 3b (holder 20), the back surface 3b side of the semiconductor chip 3 is polished. Furthermore, by continuing to apply pressure from the holder 20 to the polishing surface plate 72 (by continuing to apply pressure from the polishing surface plate 72 to the back surface 3b side of the semiconductor chip 3), the polishing surface 71 of the polishing surface plate 72 and the polishing surface plate 72 are fixed. The polishing of the back surface 3b side of the semiconductor chip 3 is continued with the abrasive between the polishing surface 71 of the board 72 and the back surface 3b of the semiconductor chip 3, and the back surface 3b side of the semiconductor chip 3 protruding from the front surface 20a of the holder 20 is polished. Then, the polishing surface 71 of the polishing surface plate 72 reaches the surface 20 a of the holder 20. The thickness of the semiconductor chip 3 at this time is the same as the depth of the hole 24 formed at the same depth as the depth of the recess 21 formed in the holder 20 in advance as shown in FIG. Therefore, the thickness of the semiconductor chip 3 can be confirmed by measuring the depth of the hole 24 without removing the semiconductor chip 3 from the holder 20.

  Further, when it is necessary to reduce the thickness of the semiconductor chip 3, the polishing surface plate 72 further polishes the polishing surface 71 of the polishing surface plate 72 and the polishing surface 71 of the polishing surface plate 72 and the holder 20. The back surface 3b side of the semiconductor chip 3 is polished with an agent. Specifically, from the state in which the polishing surface 71 of the polishing surface plate 72 reaches the surface 20a of the holder 20, the polishing surface plate 72 rotates while applying pressure to the holder 20 including the semiconductor chip 3 rotating. By doing so, the surface 20a side of the holder 20 is polished. That is, the polishing surface 71 of the polishing surface plate 72, and the polishing agent between the polishing surface 71 of the polishing surface plate 72 and the back surface 3 b (holder 20) of the semiconductor chip 3 are the surface 20 a of the holder 20. By rotating while pressing, the back surface 3b side of the semiconductor chip 3 and the front surface 20a side of the holder 20 including the hole portion 24 of the holder 20 are polished. As a result, as shown in FIG. 17B, the front surface 20a of the holder 20 is polished, the back surface 3b side of the semiconductor chip 3 is polished, and the hole 24 is also polished.

  As a result, the thickness of the holder 20 is reduced as shown in FIGS. 17 (a) to 17 (b). That is, from the state where the front surface 20a of the holder 20 and the back surface 3b of the semiconductor chip 3 form the same plane as shown in FIG. 17A, the same plane of the front surface 20a of the holder 20 and the back surface 3b of the semiconductor chip 3 is formed. By polishing the surface 20a side of the holder 20 while maintaining this state, the surface 20 of the holder 20 is polished, and the back surface 3b and the hole 24 of the semiconductor chip 3 are polished. By the polishing, the thickness t of the holder 20 shown in FIG. 17A is changed to the thickness t ′ of the holder 20 shown in FIG. 17B, and the thickness of the holder 20 is reduced.

  The thickness of the semiconductor chip 3 incorporated in the thinned holder 20 polished as described above is measured by polishing the hole 24 having the same depth as the recess 21 in which the semiconductor chip 3 is incorporated. Therefore, the thickness of the semiconductor chip 3 can be confirmed by measuring the depth of the hole 24. If the thickness of the semiconductor chip 3 does not reach the target value as a result of the measurement, the holder 20 side is rotated while rotating the holder 20 incorporating the semiconductor chip 3 under the control of the control unit 75 again. Is applied to the polishing surface plate 72 so that the polishing surface plate 72 is polished between the polishing surface 71 of the polishing surface plate 72 and the polishing surface 71 of the polishing surface plate 72 and the back surface 3b (holder 20) of the semiconductor chip 3. It rotates while applying pressure to the semiconductor chip 3 (holder 20) through the agent, so that the front surface 20 of the holder 20 is polished and the back surface 3b and the hole 24 of the semiconductor chip 3 are polished. After polishing, the thickness of the semiconductor chip 3 is confirmed by measuring the depth of the hole 24. The above is the polishing for thinning the semiconductor chip 3 by incorporating the semiconductor chip 3 into the holder 20 in the grinding apparatus 7.

  A method for measuring the holes 14 and 24 formed in the holders 10 and 20 will be described by taking Example 1 as an example.

  First, the back surface 3b side of the semiconductor chip 3 protruding from the front surface 10a of the holder 10 shown in FIG. 5A is ground, and the thickness of the semiconductor chip 3 is the same as the depth of the recess 11 formed in the holder 10 in advance. The surface 10a of the holder 10 which is the same as the depth of the hole 14 formed in this step is washed with a cleaning liquid or the like, and the grinding powder generated by grinding the back surface 3b side of the semiconductor chip 3 from the surface 10a of the holder 10 is removed. Remove. At that time, the grinding powder in the hole 14 is also removed by vacuum or the like. Then, the level difference measuring device 4 is arranged on the surface 10a of the holder 10 as shown in FIG. 19 in a state where there is no grinding powder of the semiconductor chip 3 on the surface 10a of the holder 10.

  As shown in FIG. 19, the level difference measuring device 4 includes a main body portion 41 and a needle portion 42 that projects from the main body portion 41 and scans the surface 10 a of the holder 10. The diameter of the tip of the needle portion 42 that scans on the surface 10a of the holder 10 may be 10 μm or less, and in this example, the diameter of the tip is 2 μm. When measuring the step, as shown in FIG. 19A, the needle portion 42 protruding from the main body 41 of the step measuring instrument 4 on the surface 10a of the holder 10 is moved along the arrow direction shown in FIG. , Scan (move). As shown in FIG. 19A, the needle portion 42 scans (moves) on the surface 10 a of the holder 10 without the hole portion 14, and scans the bottom surface portion of the hole portion 14. The depth (DP) of the hole 14 can be obtained by measuring the level difference between the surface 10 a of the holder 10 without the hole 14 and the bottom surface of the hole 14.

  Next, as shown in FIG. 5B, the surface 10a of the holder 10 is ground, the back surface 3b side of the semiconductor chip 3 is ground, and the surface 10a of the holder 10 whose hole 14 is also ground is cleaned with a cleaning liquid or the like. Washing is performed to remove the grinding powder generated by grinding the surface 10a of the holder 10 from the surface 10a of the holder 10. At that time, the grinding powder in the hole 14 is also removed by vacuum or the like. Then, with no grinding powder on the surface 10 a of the holder 10, the step difference measuring device 4 is again arranged on the surface 10 a of the holder 10 as shown in FIG. 19.

  Then, as shown in FIG. 19B, the needle portion 42 protruding from the main body portion 41 of the level difference measuring device 4 on the surface 10a of the holder 10 is scanned along the arrow direction shown in FIG. Move). The needle part 42 scans (moves) on the surface 10a of the holder 10 without the hole part 14, and scans the bottom face part of the hole part 14, as shown in FIG.19 (b). The depth (dp) of the hole 14 can be obtained by measuring the level difference between the surface 10a of the holder 10 without the hole 14 and the bottom surface of the hole 14. As a result, it is possible to measure how thick the semiconductor chip 3 shown in FIG. 19B is (t ′). Also, the thickness of the semiconductor chip 3 ground is confirmed by the difference between the depth (DP) of the hole 14 shown in FIG. 19A and the depth (DP) of the hole 14 shown in FIG. 19B. It becomes possible. That is, it is possible to confirm the amount of change from the thickness t to t ′ of the semiconductor chip.

DESCRIPTION OF SYMBOLS 2 ... Adhesive 3 ... Semiconductor chip, 3a ... Front surface, 3b ... Back surface, 3c ... Side surface 4 ... Level difference measuring device, 41 ... Main-body part, 42 ... Needle part 5 ... Grinding wheel spindle 7 ... Polishing surface plate 10, 20 ... Holder, 10a, 20a ... surface,
DESCRIPTION OF SYMBOLS 11, 21 ... Recessed part, 11a, 21a ... Wall surface, 12, 22 ... Bottom face part 13, 23 ... Groove part, 25 ... Bottom face part 14, 24 ... Hole part 5 ... Grinding device (processing device for thinning semiconductor chip), 51 ... grinding wheel spindle, 52 ... grinding wheel, 53 ... table, 54 ... table spindle, 55 ... control part, 56, 58 ... driver, 57, 59 ... inverter motor, 60 ... servo driver, 61 ... servo motor, 62 ... support part, 62a ... nut portion, 63 ... ball screw 7 ... polishing device (semiconductor chip thinning processing device), 70 ... pressure head, 71 ... polishing surface, 72 ... polishing surface plate, 73 ... polishing surface plate spindle, 74 ... additional Pressure head spindle, 75 ... control unit, 76, 78, 81 ... servo driver, 77, 79, 82 ... servo motor, 83 ... support unit, 83a ... nut unit, 84 ... Ball screw

Claims (12)

A semiconductor chip is attached to the surface side, and a holder that can be rotated with the semiconductor chip attached,
Rotating the semiconductor chip attached to the holder by applying pressure to the surface side of the holder, and grinding the semiconductor chip by applying pressure while rotating to thin the semiconductor chip A grinding member to be
In a processing device for thinning a semiconductor chip, comprising a control means for controlling the rotation of the holder and the grinding member and controlling the pressing by the grinding member to the surface side of the holder,
On the surface side of the holder,
When attaching the semiconductor chip to the holder and positioning the semiconductor chip by incorporating the semiconductor chip on the surface side of the holder, surrounding the portion of the semiconductor chip that has entered from the surface side of the holder, A recess formed in the thickness direction of the holder from the surface of the holder so that the semiconductor chip protrudes from the surface of the holder;
A hole formed at the same depth as the recess formed in the thickness direction of the holder from the surface of the holder in the same direction as the recess provided to the surface of the holder;
The bottom surface portion of the concave portion includes a first groove portion that extends from the bottom surface portion of the concave portion along the thickness direction of the holder and is formed continuously with the bottom surface portion of the concave portion. Processing device for semiconductor chip thinning. A semiconductor chip is attached to the surface side, and a holder that can be rotated with the semiconductor chip attached,
Rotating the semiconductor chip attached to the holder by applying pressure to the surface side of the holder, and polishing the semiconductor chip by applying pressure while rotating to thin the semiconductor chip An abrasive member to
In a processing device for thinning a semiconductor chip, comprising: a control means for controlling rotation of the holder and the polishing member and controlling pressing by the polishing member on the surface side of the holder;
On the surface side of the holder,
When attaching the semiconductor chip to the holder and positioning the semiconductor chip by incorporating the semiconductor chip on the surface side of the holder, surrounding the portion of the semiconductor chip that has entered from the surface side of the holder, A recess formed in the thickness direction of the holder from the surface of the holder so that the semiconductor chip protrudes from the surface of the holder;
A hole formed at the same depth as the recess formed in the thickness direction of the holder from the surface of the holder in the same direction as the recess provided to the surface of the holder;
The bottom surface portion of the concave portion includes a first groove portion that extends from the bottom surface portion of the concave portion along the thickness direction of the holder and is formed continuously with the bottom surface portion of the concave portion. Processing device for semiconductor chip thinning. A semiconductor chip is attached to the surface side, and a holder that can be rotated with the semiconductor chip attached,
Rotating the semiconductor chip attached to the holder by applying pressure to the surface side of the holder, and grinding the semiconductor chip by applying pressure while rotating to thin the semiconductor chip A grinding member to be
In a processing device for thinning a semiconductor chip, comprising a control means for controlling the rotation of the holder and the grinding member and controlling the pressing by the grinding member to the surface side of the holder,
On the surface side of the holder,
When attaching the semiconductor chip to the holder and positioning the semiconductor chip by incorporating the semiconductor chip on the surface side of the holder, surrounding the portion of the semiconductor chip that has entered from the surface side of the holder, A recess formed in the thickness direction of the holder from the surface of the holder so that the semiconductor chip protrudes from the surface of the holder;
A hole formed at the same depth as the recess formed in the thickness direction of the holder from the surface of the holder in the same direction as the recess provided to the surface of the holder;
A bottom surface portion is formed between the adjacent concave portions along the thickness direction of the holder from the surface of the holder, and connects the adjacent concave portions, and a bottom surface portion forms the same plane as the bottom surface portion of the concave portion. A processing device for thinning a semiconductor chip, comprising: a second groove portion. A semiconductor chip is attached to the surface side, and a holder that can be rotated with the semiconductor chip attached,
Rotating the semiconductor chip attached to the holder by applying pressure to the surface side of the holder, and polishing the semiconductor chip by applying pressure while rotating to thin the semiconductor chip An abrasive member to
In a processing device for thinning a semiconductor chip, comprising: a control means for controlling rotation of the holder and the polishing member and controlling pressing by the polishing member on the surface side of the holder;
On the surface side of the holder,
When attaching the semiconductor chip to the holder and positioning the semiconductor chip by incorporating the semiconductor chip on the surface side of the holder, surrounding the portion of the semiconductor chip that has entered from the surface side of the holder, A recess formed in the thickness direction of the holder from the surface of the holder so that the semiconductor chip protrudes from the surface of the holder;
A hole formed at the same depth as the recess formed in the thickness direction of the holder from the surface of the holder in the same direction as the recess provided to the surface of the holder;
A bottom surface portion is formed between the adjacent concave portions along the thickness direction of the holder from the surface of the holder, and connects the adjacent concave portions, and a bottom surface portion forms the same plane as the bottom surface portion of the concave portion. A processing device for thinning a semiconductor chip, comprising: a second groove portion.   5. The surface of the semiconductor chip is placed on the bottom surface of the concave portion provided in the holder when the semiconductor chip is attached to the concave portion of the holder. 6. Semiconductor chip thinning processing equipment.   6. The processing apparatus for thinning a semiconductor chip according to claim 1, wherein the holder is made of silicon that can be ground or polished like the semiconductor chip. When an adhesive is injected into a recess provided on the surface side of the holder, which is made of silicon that can be ground like a semiconductor chip, a part of the adhesive enters the first groove along the thickness direction of the holder from the recess And a part of the adhesive is moved from the concave portion to the first groove portion, and
Positioning the semiconductor chip in the concave portion of the holder by attaching the semiconductor chip to the concave portion from the front surface side of the semiconductor chip so that the back surface of the semiconductor chip is in the same direction as the front surface of the holder;
While rotating the holder incorporating the semiconductor chip and rotating the grinding member that applies pressure to the semiconductor chip, the back surface side of the semiconductor chip is applied by applying pressure to the back surface side of the semiconductor chip by the grinding member A first grinding step of grinding the back surface side portion of the semiconductor chip protruding from the front surface of the holder until the grinding member reaches the front surface of the holder;
After completion of the first grinding step, the grinding member is formed in the thickness direction of the holder from the back surface side of the semiconductor chip and the holder surface forming the same plane as the front surface of the holder. A second grinding step of grinding the surface side of the holder including a hole having the same depth as the recess in the same direction as the recess. Thinning processing method . When the adhesive is injected into the concave portion provided on the front surface side of the holder, which is made of silicon that can be ground like the semiconductor chip, the second groove portion that is flush with the bottom surface portion of the concave portion from the bottom surface portion of the concave portion A part of the adhesive flows into the bottom surface of the part, a part of the adhesive is moved from the recess to the second groove, and
Positioning the semiconductor chip in the concave portion of the holder by attaching the semiconductor chip to the concave portion from the front surface side of the semiconductor chip so that the back surface of the semiconductor chip is in the same direction as the front surface of the holder;
While rotating the holder incorporating the semiconductor chip and rotating the grinding member that applies pressure to the semiconductor chip, the back surface side of the semiconductor chip is applied by applying pressure to the back surface side of the semiconductor chip by the grinding member And a first grinding step of grinding a portion of the back surface side of the semiconductor chip that protrudes from the front surface of the holder until the grinding member reaches the front surface of the holder. A processing method for thinning a semiconductor chip . When the adhesive is injected into the concave portion provided on the front surface side of the holder, which is made of silicon that can be ground like the semiconductor chip, the second groove portion that is flush with the bottom surface portion of the concave portion from the bottom surface portion of the concave portion A part of the adhesive flows into the bottom surface of the part, a part of the adhesive is moved from the recess to the second groove, and
Positioning the semiconductor chip in the concave portion of the holder by attaching the semiconductor chip to the concave portion from the front surface side of the semiconductor chip so that the back surface of the semiconductor chip is in the same direction as the front surface of the holder;
While rotating the holder incorporating the semiconductor chip and rotating the grinding member that applies pressure to the semiconductor chip, the back surface side of the semiconductor chip is applied by applying pressure to the back surface side of the semiconductor chip by the grinding member A first grinding step of grinding the back surface side portion of the semiconductor chip protruding from the front surface of the holder until the grinding member reaches the front surface of the holder;
After completion of the first grinding step, the grinding member is formed in the thickness direction of the holder from the back surface side of the semiconductor chip and the holder surface forming the same plane as the front surface of the holder. A second grinding step of grinding the surface side of the holder including a hole having the same depth as the recess in the same direction as the recess. Thinning processing method . When an adhesive is injected into a recess provided on the surface side of the holder, which is made of silicon that can be polished like a semiconductor chip, a part of the adhesive is introduced into the first groove portion from the recess along the thickness direction of the holder. And a part of the adhesive is moved from the concave portion to the first groove portion, and
Positioning the semiconductor chip in the concave portion of the holder by attaching the semiconductor chip to the concave portion from the front surface side of the semiconductor chip so that the back surface of the semiconductor chip is in the same direction as the front surface of the holder;
While rotating the holder incorporating the semiconductor chip and rotating the polishing member that applies pressure to the semiconductor chip, the back surface side of the semiconductor chip is applied to the back surface side of the semiconductor chip by the polishing member A first polishing step of polishing the portion of the back surface side of the semiconductor chip protruding from the surface of the holder until the polishing member reaches the surface of the holder;
After completion of the first polishing step, the polishing member is formed in the thickness direction of the holder from the back surface side of the semiconductor chip and the holder surface forming the same plane as the front surface of the holder. A second polishing step of polishing the surface side of the holder including a hole having the same depth as the recess in the same direction as the recess. Thinning processing method . When the adhesive is poured into the concave portion provided on the surface side of the holder, which is made of silicon that can be polished like the semiconductor chip, the second groove portion that is flush with the bottom surface portion of the concave portion from the bottom surface portion of the concave portion A part of the adhesive flows into the bottom surface of the part, a part of the adhesive is moved from the recess to the second groove, and
Positioning the semiconductor chip in the concave portion of the holder by attaching the semiconductor chip to the concave portion from the front surface side of the semiconductor chip so that the back surface of the semiconductor chip is in the same direction as the front surface of the holder;
While rotating the holder incorporating the semiconductor chip and rotating the polishing member that applies pressure to the semiconductor chip, the back surface side of the semiconductor chip is applied to the back surface side of the semiconductor chip by the polishing member And a first polishing step for polishing the back surface portion of the semiconductor chip protruding from the front surface of the holder until the polishing member reaches the front surface of the holder. A processing method for thinning a semiconductor chip . When the adhesive is poured into the concave portion provided on the surface side of the holder, which is made of silicon that can be polished like the semiconductor chip, the second groove portion that is flush with the bottom surface portion of the concave portion from the bottom surface portion of the concave portion A part of the adhesive flows into the bottom surface of the part, a part of the adhesive is moved from the recess to the second groove, and
Positioning the semiconductor chip in the concave portion of the holder by attaching the semiconductor chip to the concave portion from the front surface side of the semiconductor chip so that the back surface of the semiconductor chip is in the same direction as the front surface of the holder;
While rotating the holder incorporating the semiconductor chip and rotating the polishing member that applies pressure to the semiconductor chip, the back surface side of the semiconductor chip is applied to the back surface side of the semiconductor chip by the polishing member A first polishing step of polishing the portion of the back surface side of the semiconductor chip protruding from the surface of the holder until the polishing member reaches the surface of the holder;
After completion of the first polishing step, the polishing member is formed in the thickness direction of the holder from the back surface side of the semiconductor chip and the holder surface forming the same plane as the front surface of the holder. A second polishing step of polishing the surface side of the holder including a hole having the same depth as the recess in the same direction as the recess. Thinning processing method .

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