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JP5388778B2 - Photoelectric conversion device, photoelectric conversion element storage package, and photoelectric conversion module - Google Patents
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JP5388778B2 - Photoelectric conversion device, photoelectric conversion element storage package, and photoelectric conversion module - Google Patents

Photoelectric conversion device, photoelectric conversion element storage package, and photoelectric conversion module Download PDF

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JP5388778B2
JP5388778B2 JP2009222310A JP2009222310A JP5388778B2 JP 5388778 B2 JP5388778 B2 JP 5388778B2 JP 2009222310 A JP2009222310 A JP 2009222310A JP 2009222310 A JP2009222310 A JP 2009222310A JP 5388778 B2 JP5388778 B2 JP 5388778B2
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photoelectric conversion
mounting substrate
element mounting
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JP2011071400A (en
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和弘 川畑
義明 植田
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Kyocera Corp
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/52PV systems with concentrators

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Description

本発明は、光電変換装置、光電変換素子収納用パッケージ、及びにその光電変換装置を用いる光電変換モジュールに関する。   The present invention relates to a photoelectric conversion device, a photoelectric conversion element storage package, and a photoelectric conversion module using the photoelectric conversion device.

近年、光電変換素子を有する光電変換装置の開発が進められている。例示的な光電変換装置としては、太陽エネルギーを電力に変換する太陽電池装置がある。特に、発電効率の向上を目的として、集光型の太陽電池装置の開発が進められている。この太陽電池装置の場合、光電変換素子は、太陽エネルギーを電力に変換する太陽電池素子である。集光された太陽光を効率良く太陽電池素子に照射する構造が、例えば、特許文献1に、開示されている。   In recent years, development of a photoelectric conversion device having a photoelectric conversion element has been advanced. As an exemplary photoelectric conversion device, there is a solar cell device that converts solar energy into electric power. In particular, for the purpose of improving the power generation efficiency, a concentrating solar cell device is being developed. In the case of this solar cell device, the photoelectric conversion element is a solar cell element that converts solar energy into electric power. For example, Patent Document 1 discloses a structure for efficiently irradiating condensed solar light onto a solar cell element.

上記特許文献1で提案されている太陽電池装置は、光電変換する太陽電池素子を搭載するレシーバ基板と、太陽電池素子を樹脂封止する樹脂封止部と、レシーバ基板上の太陽電池素子へ太陽光を導光する光学部材と、光学部材を保持し、レシーバ基板上に配置された光学保持部と、を含んで構成されている。   The solar cell device proposed in Patent Document 1 includes a receiver substrate on which a solar cell element for photoelectric conversion is mounted, a resin sealing portion for resin-sealing the solar cell element, and a solar cell element on the receiver substrate. An optical member that guides light and an optical holding unit that holds the optical member and is disposed on the receiver substrate are included.

特開2009−187971号公報JP 2009-187971 A

ところで、上記特許文献1で提案された太陽電池装置の構造では、太陽光等の照射によって、レシーバ基板で発生した熱が光学保持部を介して、光学部材に伝導し、その結果として、光学部材の熱膨張に起因して位置ずれ等を生じる可能性がある。   By the way, in the structure of the solar cell device proposed in the above-mentioned Patent Document 1, heat generated in the receiver substrate due to irradiation of sunlight or the like is conducted to the optical member through the optical holding unit, and as a result, the optical member There is a possibility of causing a positional shift or the like due to thermal expansion of the film.

本発明は、上記課題に鑑みてなされたものであり、放熱性に優れた光電変換装置、光電変換素子収納用パッケージ及び光電変換モジュールを提供することを目的とする。   This invention is made | formed in view of the said subject, and it aims at providing the photoelectric conversion apparatus excellent in heat dissipation, the package for photoelectric conversion element accommodation, and a photoelectric conversion module.

上記課題を解決するために、本発明の第1の態様に係る光電変換装置は、素子搭載基板と、前記素子搭載基板の一主面に設けられる光電変換素子と、前記素子搭載基板の一主面に前記光電変換素子を取り囲むように設けられる枠体と、前記枠体に接合されるとともに、前記光電変換素子の上方に空間を介して設けられる集光部材と、平面透視して、前記枠体で囲まれる領域内のみで、前記素子搭載基板の他主面に当接して設けられる熱伝導性基板と、を備え、前記熱伝導性基板の側面の一部は、前記素子搭載基板との当接部より外側であって前記素子搭載基板の他主面に沿った方向に突出するとともに、前記素子搭載基板の他主面から離れて設けられる延在部を有していることを特徴とする。
In order to solve the above problems, a photoelectric conversion device according to a first aspect of the present invention includes an element mounting substrate, a photoelectric conversion element provided on one main surface of the element mounting substrate, and a main element of the element mounting substrate. A frame provided on the surface so as to surround the photoelectric conversion element; a light condensing member that is bonded to the frame and provided above the photoelectric conversion element via a space; A thermal conductive substrate provided in contact with the other main surface of the element mounting substrate only in a region surrounded by a body, and a part of a side surface of the thermal conductive substrate is connected to the element mounting substrate. It has an extending portion provided outside the contact portion and projecting in a direction along the other main surface of the element mounting substrate, and provided apart from the other main surface of the element mounting substrate. To do.

また、本発明の第2の様態に係る光電変換素子収納用パッケージは、光電変換素子が搭載される搭載部を有した素子搭載基板と、前記素子搭載基板の一主面に前記搭載部を取り囲むように設けられる枠体と、前記枠体に接合されるとともに、前記光電変換素子の搭載予定位置よりも上方位置に設けられる集光部材と、平面透視して、前記枠体で囲まれる領域内のみで、前記素子搭載基板の他主面に当接して設けられる熱伝導性基板と、を備え、前記熱伝導性基板の側面の一部は、前記素子搭載基板との当接部より外側であって前記素子搭載基板の他主面に沿った方向に突出するとともに、前記素子搭載基板の他主面から離れて設けられる延在部を有していることを特徴とする。 The photoelectric conversion element storage package according to the second aspect of the present invention includes an element mounting substrate having a mounting portion on which a photoelectric conversion element is mounted, and surrounds the mounting portion on one main surface of the element mounting substrate. A frame body, and a condensing member that is joined to the frame body and provided at a position higher than a position where the photoelectric conversion element is to be mounted, and in a region surrounded by the frame body when seen in a plan view And a heat conductive substrate provided in contact with the other main surface of the element mounting substrate, and a part of a side surface of the heat conductive substrate is outside a contact portion with the element mounting substrate. And it has the extension part which protrudes in the direction along the other main surface of the said element mounting substrate, and is provided away from the other main surface of the said element mounting substrate, It is characterized by the above-mentioned.

また、本発明の第3の様態に係る光電変換モジュールは、前記光電変換装置と、前記光電変換装置上に設けられる受光部材と、を備えたことを特徴とする。   A photoelectric conversion module according to a third aspect of the present invention includes the photoelectric conversion device and a light receiving member provided on the photoelectric conversion device.

本発明は、放熱性に優れた光電変換装置、光電変換素子収納用パッケージ及び光電変換モジュールを提供することを目的とする。   An object of this invention is to provide the photoelectric conversion apparatus excellent in heat dissipation, the package for photoelectric conversion element accommodation, and a photoelectric conversion module.

本実施形態に係る光電変換モジュールの概観を示す分解斜視図である。It is a disassembled perspective view which shows the external appearance of the photoelectric conversion module which concerns on this embodiment. 本実施形態に係る光電変換装置の概観斜視図である。It is an outline perspective view of a photoelectric conversion device concerning this embodiment. 本実施形態に係る光電変換装置の集光部材を除いた概観斜視図である。It is a general-view perspective view except the condensing member of the photoelectric conversion apparatus which concerns on this embodiment.


図2に示す光電変換装置をA−A線で切断したときの断面図である。It is sectional drawing when the photoelectric conversion apparatus shown in FIG. 2 is cut | disconnected by the AA line. 図4に示す光電変換装置の平面図であって、(A)は、光電変換素子を搭載した状態を示す光電変換装置の平面図である。また、(B)は、光電変換素子を除き、熱伝導性基板の当接位置を示す光電変換装置の平面図である。また、(C)は、熱伝導性基板の素子搭載基板との当接状態を示す光電変換装置の概略断面図である。It is a top view of the photoelectric conversion apparatus shown in FIG. 4, Comprising: (A) is a top view of the photoelectric conversion apparatus which shows the state which mounted the photoelectric conversion element. Moreover, (B) is a top view of the photoelectric conversion apparatus which shows the contact position of a heat conductive board | substrate except a photoelectric conversion element. Further, (C) is a schematic cross-sectional view of the photoelectric conversion device showing a contact state between the thermally conductive substrate and the element mounting substrate. 本実施形態の変形例1に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on the modification 1 of this embodiment. 本実施形態の変形例2に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on the modification 2 of this embodiment. 図7に示す変形例2に係る光電変換装置の平面図であって、(A)は、光電変換素子を搭載した状態を示す光電変換装置の平面図である。また、(B)は、光電変換素子を除き、熱伝導性基板の当接位置を示す光電変換装置の平面図である。また、(C)は、熱伝導性基板の素子搭載基板との当接状態を示す光電変換装置の概略断面図である。It is a top view of the photoelectric conversion apparatus which concerns on the modification 2 shown in FIG. 7, Comprising: (A) is a top view of the photoelectric conversion apparatus which shows the state which mounted the photoelectric conversion element. Moreover, (B) is a top view of the photoelectric conversion apparatus which shows the contact position of a heat conductive board | substrate except a photoelectric conversion element. Further, (C) is a schematic cross-sectional view of the photoelectric conversion device showing a contact state between the thermally conductive substrate and the element mounting substrate. 本実施形態の変形例3に係る光電変換装置の平面図であって、(A)は、光電変換素子を搭載した状態を示す光電変換装置の平面図である。また、(B)は、光電変換素子を除き、熱伝導性基板の当接位置を示す光電変換装置の平面図である。また、(C)は、熱伝導性基板の素子搭載基板との当接状態を示す光電変換装置の概略断面図である。It is a top view of the photoelectric conversion apparatus which concerns on the modification 3 of this embodiment, Comprising: (A) is a top view of the photoelectric conversion apparatus which shows the state which mounted the photoelectric conversion element. Moreover, (B) is a top view of the photoelectric conversion apparatus which shows the contact position of a heat conductive board | substrate except a photoelectric conversion element. Further, (C) is a schematic cross-sectional view of the photoelectric conversion device showing a contact state between the thermally conductive substrate and the element mounting substrate.

以下、本発明の一実施形態に係る光電変換モジュール、光電変換装置及び光電変換素子収納用パッケージについて、図面を参照しながら説明する。   Hereinafter, a photoelectric conversion module, a photoelectric conversion device, and a photoelectric conversion element storage package according to an embodiment of the present invention will be described with reference to the drawings.

<実施形態>
<光電変換モジュールの構成>
図1は、本発明の実施形態に係る光電変換モジュール1の概観斜視図と、その一部を拡大した分解斜視図である。また、図2は、図1に示す光電変換装置2の概観斜視図である。また、図3は、集光部材を取り除いた光電変換装置2の概観斜視図である。また、図4は、光電変換装置2の断面図である。また、図5は、集光部材を取り除いた光電変換装置2の平面図であって、図5(A)は、光電変換素子を搭載した状態を示す光電変換装置2の平面図である。また、図5(B)は、光電変換素子を取り除き、熱伝導性基板を配置した状態を示す光電変換装置2の平面図である。
<Embodiment>
<Configuration of photoelectric conversion module>
FIG. 1 is an overview perspective view of a photoelectric conversion module 1 according to an embodiment of the present invention, and an exploded perspective view in which a part thereof is enlarged. 2 is a schematic perspective view of the photoelectric conversion device 2 shown in FIG. FIG. 3 is a schematic perspective view of the photoelectric conversion device 2 from which the light collecting member is removed. FIG. 4 is a cross-sectional view of the photoelectric conversion device 2. FIG. 5 is a plan view of the photoelectric conversion device 2 from which the light collecting member is removed, and FIG. 5A is a plan view of the photoelectric conversion device 2 showing a state where the photoelectric conversion elements are mounted. FIG. 5B is a plan view of the photoelectric conversion device 2 showing a state in which the photoelectric conversion element is removed and a heat conductive substrate is arranged.

本実施形態に係る光電変換モジュール1は、太陽光エネルギーを電力に変換する太陽光発電モジュールである。また、本実施形態に係る光電変換装置2は、光エネルギーを電力に変換する光電変換素子9を含んでいる。かかる光電変換素子9は、例えば、太陽光エネルギーを電力に変換する機能を備えている太陽電池素子である。   The photoelectric conversion module 1 according to the present embodiment is a solar power generation module that converts solar energy into electric power. Moreover, the photoelectric conversion apparatus 2 according to the present embodiment includes a photoelectric conversion element 9 that converts light energy into electric power. For example, the photoelectric conversion element 9 is a solar cell element having a function of converting solar energy into electric power.

光電変換モジュール1は、複数の光電変換装置2と、複数の光電変換装置2の上方に設けられた受光部材3と外部基板4を含んで構成される。受光部材3は、外部からの光を受光するとともに、受光した光を集光部材11に集める機能を備えている。また、受光部材3は、複数個のレンズ部材3bが矩形のフレーム部材3aに固定されることにより構成されている。受光部材3のレンズ部材3bは、例えば、ドーム状のフレネルレンズであり、例えば、アクリル樹脂等の光学的特性に優れた樹脂材料からなる。複数の光電変換装置2は、外部基板4に実装されている。受光部材3は、外部基板4に固定されており、複数の光電変換装置2を覆っている。   The photoelectric conversion module 1 includes a plurality of photoelectric conversion devices 2, a light receiving member 3 and an external substrate 4 provided above the plurality of photoelectric conversion devices 2. The light receiving member 3 has a function of collecting light received from the outside and collecting the received light on the light collecting member 11. The light receiving member 3 is configured by fixing a plurality of lens members 3b to a rectangular frame member 3a. The lens member 3b of the light receiving member 3 is, for example, a dome-shaped Fresnel lens, and is made of a resin material having excellent optical characteristics such as acrylic resin. The plurality of photoelectric conversion devices 2 are mounted on the external substrate 4. The light receiving member 3 is fixed to the external substrate 4 and covers the plurality of photoelectric conversion devices 2.

また、外部基板4は、光電変換装置2から発せられる熱を放散させる機能を備えている。外部基板4は、例えば、アルミニウム、銅、炭素−金属複合材等の金属材料から成る。なお、外部基板4の熱伝導率は、例えば、100W/(m・K)以上500W/(m・K)以下に設定されている。   The external substrate 4 has a function of radiating heat generated from the photoelectric conversion device 2. The external substrate 4 is made of a metal material such as aluminum, copper, or a carbon-metal composite material. The thermal conductivity of the external substrate 4 is set to, for example, 100 W / (m · K) or more and 500 W / (m · K) or less.

受光部材3に入射された光は、光電変換装置2の集光部材11の上端部に集められる。すなわち、集光部材11は、受光部材3によって集められた光を光電変換素子9に導く機能を備えている。集光部材11に入射された光は、集光部材11で反射を繰り返しながら集光部材11の上端部から下端部へ進み、集光部材11の下端部から光電変換素子9の上面に入射される。そして、光電変換素子9は、光エネルギーを電力に変換する。   The light incident on the light receiving member 3 is collected at the upper end of the light collecting member 11 of the photoelectric conversion device 2. That is, the light collecting member 11 has a function of guiding the light collected by the light receiving member 3 to the photoelectric conversion element 9. The light incident on the light collecting member 11 proceeds from the upper end to the lower end of the light collecting member 11 while being repeatedly reflected by the light collecting member 11, and is incident on the upper surface of the photoelectric conversion element 9 from the lower end of the light collecting member 11. The The photoelectric conversion element 9 converts light energy into electric power.

光電変換装置2は、図4に示すように、素子搭載基板5と、素子搭載基板5の一主面に設けられる台座6と、素子搭載基板5の一主面に設けられる光電変換素子9と、光電変換素子9と電気的に接続されるともに、光電変換素子9の出力を外部に取り出す第1の出力端子8aと第2の出力端子8bと、素子搭載基板5の一主面の光電変換素子9を取り囲むように設けられる枠体10と、枠体10に接合されるとともに、光電変換素子9の上方に空間を介して設けられる集光部材11と、平面透視して、枠体10で囲まれる領域内であって、素子搭載基板5の他主面に当接して設けられる熱伝導性基板12と、を備えている。なお、枠体10は、素子搭載基板5の一主面を環状に取り囲むように形成されている。   As shown in FIG. 4, the photoelectric conversion device 2 includes an element mounting substrate 5, a pedestal 6 provided on one main surface of the element mounting substrate 5, and a photoelectric conversion element 9 provided on one main surface of the element mounting substrate 5. The first output terminal 8a and the second output terminal 8b that are electrically connected to the photoelectric conversion element 9 and take out the output of the photoelectric conversion element 9 to the outside, and photoelectric conversion on one main surface of the element mounting substrate 5 A frame 10 provided so as to surround the element 9, and a condensing member 11 that is bonded to the frame 10 and provided above the photoelectric conversion element 9 via a space, and is seen through the plane, And a thermally conductive substrate 12 provided in contact with the other main surface of the element mounting substrate 5 in an enclosed region. The frame 10 is formed so as to surround one main surface of the element mounting substrate 5 in an annular shape.

素子搭載基板5及び素子搭載基板5の一主面に設けられる台座6は、平面透視したときに矩形状に形成された部材である。また、枠体10は、平面透視したときに矩形状に形成された部材である。素子搭載基板5、台座6又は枠体10の平面透視したときの形状は、矩形状に限らず、円形状等の形状にすることができる。なお、枠体10の形状は、接合される集光部材11の形状に合わせて形成されることが好ましい。   The element mounting substrate 5 and the pedestal 6 provided on one main surface of the element mounting substrate 5 are members formed in a rectangular shape when seen through the plane. The frame body 10 is a member formed in a rectangular shape when seen through on a plane. The shape of the element mounting substrate 5, the pedestal 6, or the frame body 10 when seen through the plane is not limited to a rectangular shape, and may be a circular shape or the like. In addition, it is preferable that the shape of the frame 10 is formed according to the shape of the condensing member 11 to be joined.

素子搭載基板5、台座6及び枠体6は、例えば、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体、窒化珪素質焼結体又はガラスセラミック等のセラミックス、銅、鉄、タングステン、モリブデン、ニッケル又はコバルト等の金属材料或いはこれらの金属材料を含有する合金、ガラスエポキシ、アクリル又はエポキシ等の樹脂材料からなる。また、素子搭載基板5の熱膨張係数は、例えば、7(ppm/℃)以上9(ppm/℃)以下に設定されている。   The element mounting substrate 5, the pedestal 6, and the frame 6 are, for example, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or glass. It consists of ceramic materials such as ceramics, metal materials such as copper, iron, tungsten, molybdenum, nickel or cobalt, or alloys containing these metal materials, resin materials such as glass epoxy, acrylic or epoxy. Further, the coefficient of thermal expansion of the element mounting substrate 5 is set to, for example, 7 (ppm / ° C.) or more and 9 (ppm / ° C.) or less.

また、素子搭載基板5の一主面には、第1の導電パターン7aが形成される。また、素子搭載基板5の他主面には、熱伝導性基板12が当接される領域にメタライズ層が形成される。   A first conductive pattern 7 a is formed on one main surface of the element mounting substrate 5. In addition, a metallized layer is formed on the other main surface of the element mounting substrate 5 in a region where the thermally conductive substrate 12 abuts.

台座6上には、第2の導電パターン7bが形成される。第1の導電パターン7a及び第2の導電パターン7bは、例えば、タングステン、モリブデン又はマンガン等の金属材料からなり、例えば、スクリーン印刷法によるメタライズ形成技術を用いて形成される。   A second conductive pattern 7 b is formed on the pedestal 6. The first conductive pattern 7a and the second conductive pattern 7b are made of, for example, a metal material such as tungsten, molybdenum, or manganese, and are formed using, for example, a metallization forming technique by a screen printing method.

また、枠体10は、集光部材11を支持する機能を備える。すなわち、枠体10は、図4に示すように、枠体10の上面から枠体6の全周にわたって、枠体10の内壁側が低くなる方向に傾斜している傾斜面を有する支持部10aを有している。枠体10の支持部10aの傾斜の形状は、集光部材11の傾斜の形状に合わせて形成される。尚、支持部10aの傾斜の形状と集光部材11の傾斜の形状、すなわち、断面視したときの支持部10aの傾斜面の傾斜角と集光部材11の側面の傾斜角の差が、20°以下の範囲内であれば好ましい。   The frame 10 has a function of supporting the light collecting member 11. That is, as shown in FIG. 4, the frame body 10 includes a support portion 10 a having an inclined surface that is inclined in a direction in which the inner wall side of the frame body 10 is lowered from the upper surface of the frame body 10 to the entire circumference of the frame body 6. Have. The inclined shape of the support portion 10 a of the frame 10 is formed in accordance with the inclined shape of the light collecting member 11. The difference between the inclined shape of the support portion 10a and the inclined shape of the light collecting member 11, that is, the inclination angle of the inclined surface of the support portion 10a and the inclination angle of the side surface of the light collecting member 11 when viewed in cross section is 20 It is preferable if it is within the range of ° or less.

集光部材11の側面が枠体10の支持部10aの傾斜面で接合されるため、両者が滑らかに接合され、集光部材11に傷等が付きにくく、両者を良好に接合することができる。その結果、傷等によって光電変換素子9に導かれる光の進行方向の変化を抑制することができ、集光性を向上することができる。また、枠体10の支持部10aは、枠体10の上面から内壁面にかけて切り欠いた段差であっても良い。   Since the side surface of the light collecting member 11 is joined by the inclined surface of the support portion 10a of the frame body 10, both are smoothly joined, the light collecting member 11 is hardly damaged, and both can be joined well. . As a result, a change in the traveling direction of the light guided to the photoelectric conversion element 9 due to scratches or the like can be suppressed, and the light collecting property can be improved. Further, the support portion 10 a of the frame body 10 may be a stepped notch from the upper surface of the frame body 10 to the inner wall surface.

集光部材11との接合のために、枠体10の支持部10aの傾斜面には、メタライズ層が形成されている。接合部材10bを介して、支持部10aの傾斜面のメタライズ層と集光部材11の側面部に設けられた金属膜が接合される。メタライズ層としては、例えば、タングステン、モリブデン又はマンガン等の金属材料が、例えば、スクリーン印刷法によるメタライズ形成技術を用いて形成される。なお、集光部材11の詳細な構成については後述する。   A metallized layer is formed on the inclined surface of the support portion 10 a of the frame 10 for joining with the light collecting member 11. The metallized layer on the inclined surface of the support portion 10a and the metal film provided on the side surface portion of the light collecting member 11 are bonded via the bonding member 10b. As the metallized layer, for example, a metal material such as tungsten, molybdenum, or manganese is formed by using, for example, a metallization forming technique by a screen printing method. The detailed configuration of the light collecting member 11 will be described later.

ここで、素子搭載基板5、台座6及び枠体10がセラミックスで形成される場合について、三者が一体化される状態の素子搭載基板5、台座6及び枠体10の作製方法について説明する。焼成前の未硬化の素子搭載基板5上の一主面に、例えば、スクリーン印刷法によるメタライズ形成技術を用いて、第1の導電パターン7aを形成し、他主面に熱伝導性基板12が当接される領域にメタライズ層を形成する。また、焼成前の未硬化の台座6上に、例えば、スクリーン印刷法によるメタライズ形成技術を用いて、第2の導電パターン7bを形成する。また、焼成前の未硬化の枠体10の支持部10aの傾斜面に、例えば、スクリーン印刷法によるメタライズ形成技術を用いて、集光部材11との接合のためのメタライズ層を形成する。そして、第1の導電パターン7aが形成された焼成前の未硬化の素子搭載基板5の一主面に、第2の導電パターン7bが形成された焼成前の未硬化の台座6、更に、焼成前の未硬化の枠体10を圧着して、三者を同時に焼成する。このようにして、焼成後に、素子搭載基板5、台座6及び枠体10が一体化される。   Here, in the case where the element mounting substrate 5, the pedestal 6 and the frame body 10 are formed of ceramics, a manufacturing method of the element mounting substrate 5, the pedestal 6 and the frame body 10 in a state where the three are integrated will be described. The first conductive pattern 7a is formed on one main surface of the uncured element mounting substrate 5 before firing using, for example, a metallization forming technique by screen printing, and the heat conductive substrate 12 is formed on the other main surface. A metallized layer is formed in the contact area. Further, the second conductive pattern 7b is formed on the uncured pedestal 6 before firing using, for example, a metallization forming technique by a screen printing method. Further, a metallized layer for joining with the light collecting member 11 is formed on the inclined surface of the support portion 10a of the uncured frame body 10 before firing using, for example, a metallization forming technique by a screen printing method. Then, an uncured base 6 before firing on which the second conductive pattern 7b is formed on one main surface of the uncured element mounting substrate 5 before firing on which the first conductive pattern 7a is formed, and further firing. The previous uncured frame 10 is pressure-bonded and the three are fired simultaneously. In this way, the element mounting substrate 5, the pedestal 6, and the frame body 10 are integrated after firing.

光電変換素子9は、例えば、III−V族化合物半導体を含んでいる太陽電池素子である。光電変換素子9は、光起電力効果により、受けた光エネルギーを即時に電力に変換して出力することができる。例えば、太陽電池素子は、InGaP/GaAs/Ge3接合型セルの構造を有している。インジウムガリウムリン(InGaP)トップセルは、660nm以下の波長領域に含まれる光をエネルギー変換する。ガリウムヒ素(GaAs)ミドルセルは、660nmから890nmまでの波長領域に含まれる光をエネルギー変換する。ゲルマニウム(Ge)ボトムセルは、890nmから2000nmまでの波長領域に含まれる光をエネルギー変換する。3つのセルは、トンネル接合を介して直列に接続されている。開放電圧は、3つのセルの起電圧の和である。   The photoelectric conversion element 9 is, for example, a solar cell element that includes a III-V group compound semiconductor. The photoelectric conversion element 9 can immediately convert the received light energy into electric power and output it by the photovoltaic effect. For example, the solar cell element has an InGaP / GaAs / Ge3 junction type cell structure. The indium gallium phosphide (InGaP) top cell converts energy contained in a wavelength region of 660 nm or less. The gallium arsenide (GaAs) middle cell converts energy contained in a wavelength region from 660 nm to 890 nm. The germanium (Ge) bottom cell converts light contained in a wavelength region from 890 nm to 2000 nm. The three cells are connected in series via a tunnel junction. The open circuit voltage is the sum of the electromotive voltages of the three cells.

光電変換素子9の下面には、光電変換素子9の下面電極が形成されている。かかる下面電極は、例えば、銀、アルミニウム等により形成され、低融点半田、導電性エポキシ樹脂等の接合材を介して第1の導電パターン7aと電気的に接続されている。   A lower surface electrode of the photoelectric conversion element 9 is formed on the lower surface of the photoelectric conversion element 9. The lower electrode is made of, for example, silver or aluminum and is electrically connected to the first conductive pattern 7a via a bonding material such as low melting point solder or conductive epoxy resin.

また、光電変換素子9の上面には、光電変換素子9の上面電極が形成されている。かかる上面電極は、例えば、銀、アルミニウム等により形成され、導電性ワイヤで第2の導電パターン7bと電気的に接続されている。なお、上面電極の第2の導電パターン7bに対する導電性ワイヤの接続箇所は、2箇所としているが、これに限らず、3箇所以上としても良い。これにより、導電性ワイヤの1本あたりの電流が低減し、熱の発生を抑制することができる。   Further, the upper surface electrode of the photoelectric conversion element 9 is formed on the upper surface of the photoelectric conversion element 9. The upper surface electrode is formed of, for example, silver, aluminum or the like, and is electrically connected to the second conductive pattern 7b with a conductive wire. In addition, although the connection place of the conductive wire with respect to the 2nd conductive pattern 7b of an upper surface electrode is made into two places, it may not be restricted to this but may be three or more places. Thereby, the current per one conductive wire can be reduced, and the generation of heat can be suppressed.

更に、第1の導電パターン7a及び第2の導電パターン7bは、接合材を介して第1の出力端子8aと第2の出力端子8bに電気的に接続されている。第1の出力端子8a及び第2の出力端子8bは、例えば、鉄−ニッケル−コバルト(Fe−Ni−Co)合金である。また、接合材としては、例えば、銀−銅ロウ、低融点半田又は導電性エポキシ樹脂等である。   Further, the first conductive pattern 7a and the second conductive pattern 7b are electrically connected to the first output terminal 8a and the second output terminal 8b through a bonding material. The first output terminal 8a and the second output terminal 8b are, for example, an iron-nickel-cobalt (Fe—Ni—Co) alloy. The bonding material is, for example, silver-copper solder, low melting point solder, conductive epoxy resin, or the like.

ここで、例えば、第1の出力端子8aは、正極として機能する。また、第2の出力端子8bは、負極として機能する。そして、光電変換素子9は、第1の出力端子8a及び第2の出力端子8bに電気的に接続されており、第1の出力端子8a及び第2の出力端子8bを介して外部に電気を取り出すことができる。   Here, for example, the first output terminal 8a functions as a positive electrode. The second output terminal 8b functions as a negative electrode. The photoelectric conversion element 9 is electrically connected to the first output terminal 8a and the second output terminal 8b, and electricity is supplied to the outside through the first output terminal 8a and the second output terminal 8b. It can be taken out.

集光部材11は、側面の全周にわたって金属膜が形成される。尚、金属膜は、枠体10の支持部10aに相当する位置に蒸着法やスパッタ法等の薄膜形成技術によって形成される。金属膜は、例えば、チタン、白金、金、クロム、ニッケル、金、銀、銅、或いはそれらの合金等の金属材料である。集光部材11の側面の金属膜が、接合部材10bを介して、枠体10の全周にわたって、枠体10の支持部10aの傾斜面で接合される。両者は、ロウ接合、半田接合又は樹脂接合等で接合される。   As for the condensing member 11, a metal film is formed over the perimeter of a side surface. The metal film is formed at a position corresponding to the support portion 10a of the frame 10 by a thin film forming technique such as vapor deposition or sputtering. The metal film is a metal material such as titanium, platinum, gold, chromium, nickel, gold, silver, copper, or an alloy thereof. The metal film on the side surface of the light collecting member 11 is bonded to the inclined surface of the support portion 10a of the frame body 10 over the entire circumference of the frame body 10 via the bonding member 10b. Both are joined by brazing, soldering, resin joining, or the like.

また、接合部材10bは、例えば、ロウ材、半田、低融点ガラス又はエポキシ樹脂等からなる。ロウ材としては、例えば、銀−銅ロウ等である。半田としては、金−錫系、金−ゲルマニウム系、錫−鉛系等である。また、低融点ガラスとは、ガラス転移点が600℃以下のガラスのことをいう。枠体10と集光部材11が、枠体10の支持部10aのみで接合されることによって、枠体10と集光部材11の接合面積が小さくできる。その結果、枠体10から集光部材11への圧縮応力が低減でき、集光部材11の屈折率の変化による光電変換素子9への照射光の位置ずれを抑制し、集光性を向上することができる。   The joining member 10b is made of, for example, a brazing material, solder, low-melting glass, epoxy resin, or the like. Examples of the brazing material include silver-copper brazing. Examples of solder include gold-tin, gold-germanium, and tin-lead. The low melting point glass means a glass having a glass transition point of 600 ° C. or lower. By joining the frame body 10 and the light collecting member 11 only by the support portion 10 a of the frame body 10, the joint area between the frame body 10 and the light collecting member 11 can be reduced. As a result, the compressive stress from the frame 10 to the light collecting member 11 can be reduced, the positional deviation of the irradiation light to the photoelectric conversion element 9 due to the change in the refractive index of the light collecting member 11 is suppressed, and the light collecting property is improved. be able to.

集光部材11は、枠体10の全周にわたって接合されるとともに、光電変換素子9の上方に空間SPを介して設けられる。結果として、光電変換素子9は、素子搭載基体5、台座6、枠体10及び集光部材11で囲まれる空間SPに設けられ、気密封止される。内部の空間SPに設けられることによって、光電変換素子9を気密封止することができるため、耐湿性が向上し、光電変換素子9を長期にわたって信頼性良く作動させることができる。   The condensing member 11 is joined over the entire circumference of the frame body 10 and is provided above the photoelectric conversion element 9 via the space SP. As a result, the photoelectric conversion element 9 is provided in a space SP surrounded by the element mounting base 5, the pedestal 6, the frame body 10, and the light collecting member 11 and hermetically sealed. Since the photoelectric conversion element 9 can be hermetically sealed by being provided in the internal space SP, moisture resistance is improved, and the photoelectric conversion element 9 can be operated with reliability over a long period of time.

また、集光部材11は、透光性を有しており、受光部材3から届いた光を光電変換素子9に導く機能を備えている。集光部材11の透光性とは、光電変換素子9が、太陽電池素子である場合は、太陽光の少なくとも一部の波長領域に含まれる光が透過できることをいう。集光部材11は、例えば、ホウ珪酸ガラスである。   Further, the light collecting member 11 has translucency and has a function of guiding the light reaching from the light receiving member 3 to the photoelectric conversion element 9. The translucency of the condensing member 11 means that light contained in at least a part of the wavelength region of sunlight can be transmitted when the photoelectric conversion element 9 is a solar cell element. The condensing member 11 is, for example, borosilicate glass.

また、集光部材11は、集光プリズムであり、その形状は、集光部材11の上端部から下端部へ光電変換素子9に向かうに従って断面積が小さくなる四角錐台形状である。集光部材11に届いた光は、集光部材11の内部と外部との界面において繰り返し反射される。集光部材11は、光電変換素子9に向かう過程で反射によって断面積内の光エネルギーの強度分布を均等化するという機能を備えている。なお、集光部材11の周囲には、例えば、蒸着法等によって、太陽光を反射する機能を有する反射部材として、金属の薄膜を設けても良い。   The condensing member 11 is a condensing prism, and has a quadrangular frustum shape whose cross-sectional area decreases from the upper end portion to the lower end portion of the condensing member 11 toward the photoelectric conversion element 9. The light that reaches the light collecting member 11 is repeatedly reflected at the interface between the inside and the outside of the light collecting member 11. The condensing member 11 has a function of equalizing the intensity distribution of light energy in the cross-sectional area by reflection in the process toward the photoelectric conversion element 9. Note that a metal thin film may be provided around the light collecting member 11 as a reflective member having a function of reflecting sunlight, for example, by vapor deposition.

また、集光部材11は、光の反射によって断面積内の光エネルギーの強度分布を均等化する機能を有していればよい。集光部材11の形状は、集光部材11の上端部から下端部へ光電変換素子9に向かうに従って断面積が小さくなる円錐台形状であっても良い。なお、枠体10の形状は、集光部材11の形状に合わせて形成されることが好ましい。   Moreover, the condensing member 11 should just have the function to equalize the intensity distribution of the light energy in a cross-sectional area by reflection of light. The shape of the light collecting member 11 may be a truncated cone shape whose cross-sectional area decreases from the upper end portion to the lower end portion of the light collecting member 11 toward the photoelectric conversion element 9. The shape of the frame 10 is preferably formed in accordance with the shape of the light collecting member 11.

熱伝導性基板12は、平面透視して、枠体10で囲まれる領域内、すなわち、図5(B)に示すように、一点鎖線で囲まれる領域内で、素子搭載基板5の他主面に当接して設けられる。なお、熱伝導性基板12は、平面透視して、枠体10で囲まれる領域内のみで、素子搭載基板5の他主面に当接されることが好ましい。熱伝導性基板12は、熱伝導性の優れた材料からなり、例えば、銅、銀、金、鉄、アルミニウム、ニッケル、コバルト又はクロム等の金属材料、或いはそれらの合金からなる。熱伝導性基板12は、素子搭載基板5の他主面で、枠体10で囲まれる領域内に形成されたメタライズ層に、ロウ材を介して、素子搭載基板5と接合される。また、熱導電性基板12の熱膨張係数は、例えば、7(ppm/℃)以上23(ppm/℃)以下に設定されている。   The thermal conductive substrate 12 is seen through the plane, and the other main surface of the element mounting substrate 5 in the region surrounded by the frame 10, that is, in the region surrounded by the alternate long and short dash line as shown in FIG. Is provided in contact with. The heat conductive substrate 12 is preferably in contact with the other main surface of the element mounting substrate 5 only in a region surrounded by the frame body 10 as seen through the plane. The heat conductive substrate 12 is made of a material having excellent heat conductivity, for example, a metal material such as copper, silver, gold, iron, aluminum, nickel, cobalt, or chromium, or an alloy thereof. The thermally conductive substrate 12 is bonded to the element mounting substrate 5 via a brazing material on a metallized layer formed in a region surrounded by the frame 10 on the other main surface of the element mounting substrate 5. The thermal expansion coefficient of the thermally conductive substrate 12 is set to, for example, 7 (ppm / ° C.) or more and 23 (ppm / ° C.) or less.

熱伝導性基板12の熱伝導率は、例えば、100W/(m・K)以上500W/(m・K)以下に設定されている。また、熱伝導性基板12は、図5(B)に示すように、平面透視した場合に、熱伝導性基板12と枠体10との距離Lは、集光部材11への熱伝導の抑制という点で、L1は、0.1mm以上3.0mm以下、L2は、0.1mm以上3.0mm以下、L3は、0.1mm以上3.0mm以下、L4は、0.1mm以上3.0mm以下にそれぞれ設定されることが好ましい。また、熱伝導性基板12の厚みT1は、素子搭載基板5と熱伝導性基板12との熱膨張係数の差による接合応力の緩和という点で、0.1mm以上1.0mm以下に設定されることが好ましい。   The thermal conductivity of the thermally conductive substrate 12 is set to, for example, 100 W / (m · K) or more and 500 W / (m · K) or less. In addition, as shown in FIG. 5B, the distance L between the heat conductive substrate 12 and the frame body 10 is the suppression of heat conduction to the light collecting member 11 when the heat conductive substrate 12 is seen through a plane. Therefore, L1 is 0.1 mm to 3.0 mm, L2 is 0.1 mm to 3.0 mm, L3 is 0.1 mm to 3.0 mm, and L4 is 0.1 mm to 3.0 mm. Each of the following is preferably set. Further, the thickness T1 of the heat conductive substrate 12 is set to 0.1 mm or more and 1.0 mm or less in terms of relaxation of bonding stress due to a difference in thermal expansion coefficient between the element mounting substrate 5 and the heat conductive substrate 12. It is preferable.

<光電変換素子収納用パッケージの構成>
ここで、光電変換素子収納用パッケージについて説明する。光電変換素子収納用パッケージとは、素子搭載基板5の一主面上に光電変換素子9が未搭載の状態である。すなわち、光電変換素子収納用パッケージは、素子搭載基板5の一主面に光電変換素子9が搭載される導電パターンを含む搭載部を有した素子搭載基板5と、素子搭載基板5の一主面の搭載部を取り囲むように設けられる枠体10と、を備えている。枠体10は、光電変換素子9の搭載予定位置より上方位置に設けられる予定の集光部材11を接合するために、枠体10の内壁側が低くなる方向に傾斜している傾斜面を有している。また、枠体10の支持部10aは、枠体10の上面から内壁面にかけて切り欠いた段差を有していても良い。
<Configuration of photoelectric conversion element storage package>
Here, the photoelectric conversion element storage package will be described. The photoelectric conversion element storage package is a state in which the photoelectric conversion element 9 is not mounted on one main surface of the element mounting substrate 5. That is, the photoelectric conversion element storage package includes an element mounting board 5 having a mounting portion including a conductive pattern on which the photoelectric conversion element 9 is mounted on one main surface of the element mounting board 5, and one main surface of the element mounting board 5. And a frame 10 provided so as to surround the mounting portion. The frame body 10 has an inclined surface that is inclined in a direction in which the inner wall side of the frame body 10 is lowered in order to join the light collecting member 11 that is to be provided at a position above the planned mounting position of the photoelectric conversion element 9. ing. Further, the support portion 10 a of the frame body 10 may have a stepped portion cut out from the upper surface of the frame body 10 to the inner wall surface.

光電変換素子収納用パッケージの素子搭載基板5の一主面に、例えば、半田や樹脂等の接合材を介して光電変換素子9を搭載し、更に、枠体10に、光電変換素子9の上方に空間を介して集光部材11が設けられる。更に、熱伝導性基板12が、平面透視して、枠体10で囲まれる領域内で素子搭載基板5の他主面に当接して設けられる。接合部材10bを介して、枠体10の支持部10aのメタライズ層と集光部材11の金属膜が接合されることにより、集光部材11が設けられた光電変換装置2となる。   For example, a photoelectric conversion element 9 is mounted on one main surface of the element mounting substrate 5 of the photoelectric conversion element storage package via a bonding material such as solder or resin, and the frame 10 is further provided above the photoelectric conversion element 9. A condensing member 11 is provided through a space. Further, the heat conductive substrate 12 is provided in contact with the other main surface of the element mounting substrate 5 in a region surrounded by the frame body 10 as seen in a plan view. By joining the metallized layer of the support portion 10a of the frame 10 and the metal film of the light collecting member 11 via the bonding member 10b, the photoelectric conversion device 2 provided with the light collecting member 11 is obtained.

本実施形態によれば、熱伝導性基板12が、平面透視して、枠体10で囲まれた領域内で素子搭載基板5の他主面に当接して設けられることで、光電変換素子9で発生する熱が熱伝導性基板12に効率良く放熱されるため、光電変換素子9の温度上昇を抑制することができる。その結果、光電変換素子9の温度上昇が抑制され、光電変換素子9の変換効率の低下を抑制することができる。   According to the present embodiment, the thermal conductive substrate 12 is provided in contact with the other main surface of the element mounting substrate 5 in a region surrounded by the frame body 10 in a plan view. Since the heat generated at is efficiently radiated to the heat conductive substrate 12, the temperature rise of the photoelectric conversion element 9 can be suppressed. As a result, a temperature increase of the photoelectric conversion element 9 is suppressed, and a decrease in conversion efficiency of the photoelectric conversion element 9 can be suppressed.

また、熱伝導性基板12が、平面視して、枠体10で囲まれた領域内で素子搭載基板5の他主面に当接して設けられているため、光電変換素子9から熱伝導性基板12に伝導される熱を、枠体10にまで伝導するのを抑制することができるため、枠体10に接合されている集光部材11は、光電変換素子9で発生した熱の影響を受けにくくなる。結果として、枠体10から集光部材11に伝導する熱を低減することができる。集光部材11が熱の影響を受けにくくなることによって、集光部材11の熱膨張による集光効率の低下が抑制される。すなわち、集光部材11と光電変換素子9との高さの変動や光電変換素子9への照射光の位置ずれによる集光効率の低下が抑制される。   Further, since the heat conductive substrate 12 is provided in contact with the other main surface of the element mounting substrate 5 in a region surrounded by the frame body 10 in a plan view, the heat conductivity from the photoelectric conversion element 9. Since the heat conducted to the substrate 12 can be suppressed from being conducted to the frame body 10, the light collecting member 11 joined to the frame body 10 is affected by the heat generated by the photoelectric conversion element 9. It becomes difficult to receive. As a result, the heat conducted from the frame 10 to the light collecting member 11 can be reduced. By making the condensing member 11 less susceptible to heat, a decrease in condensing efficiency due to thermal expansion of the condensing member 11 is suppressed. That is, a decrease in light collection efficiency due to a variation in height between the light collecting member 11 and the photoelectric conversion element 9 and a positional shift of irradiation light to the photoelectric conversion element 9 is suppressed.

また、例えば、枠体10から集光部材11に熱が多く伝導すると、枠体10と集光部材11とを接続する接続部材10bが熱の影響を受けて、集光部材11の位置ずれが発生し、集光部材11から光電変換素子9への照射光の位置ずれにより集光性が低下する虞がある。本実施例によれば、熱伝導性基板12を平面透視して、枠体10で囲まれる領域内に当接して設けることで、熱伝導性基板12から枠体10に伝導する熱を低減することができる。結果として、枠体10から集光部材11に伝導する熱を低減することができるため、枠体10と集光部材11とを接続する接続部材10bが熱の影響を受けにくく、集光部材11の位置ずれが抑制され、集光部材11から光電変換素子9への照射光の位置ずれを抑制することができ、集光性を向上することができる。   Further, for example, when a large amount of heat is conducted from the frame 10 to the light collecting member 11, the connecting member 10 b that connects the frame 10 and the light collecting member 11 is affected by the heat, and the position shift of the light collecting member 11 is caused. There is a possibility that the light condensing performance is deteriorated due to the positional deviation of the irradiation light from the light collecting member 11 to the photoelectric conversion element 9. According to the present embodiment, the heat conductive substrate 12 is seen through in plan and is provided in contact with the region surrounded by the frame body 10, thereby reducing the heat conducted from the heat conductive substrate 12 to the frame body 10. be able to. As a result, since heat conducted from the frame body 10 to the light collecting member 11 can be reduced, the connection member 10b connecting the frame body 10 and the light collecting member 11 is hardly affected by heat, and the light collecting member 11 The positional deviation of the irradiation light from the condensing member 11 to the photoelectric conversion element 9 can be suppressed, and the light condensing property can be improved.

また、例えば、集光部材11で集光された太陽光が、光電変換素子9以外の領域に、位置ずれした状態で多く照射されると、素子搭載基板5の温度が上昇する。本実施例によれば、熱伝導性基板12に効率良く放熱されるため、集光部材11で集光された太陽光が、光電変換素子9以外の領域に、位置ずれした状態で照射されても、素子搭載基板5の温度上昇を抑制することができる。結果として、集光された太陽光の位置ずれに起因して発生する熱による素子搭載基板5の温度上昇及び光電変換素子9の変換効率の低下を抑制することができる。   In addition, for example, when the sunlight collected by the light collecting member 11 is irradiated in a large amount in a position shifted to a region other than the photoelectric conversion element 9, the temperature of the element mounting substrate 5 rises. According to the present embodiment, in order to efficiently dissipate heat to the heat conductive substrate 12, sunlight condensed by the light collecting member 11 is irradiated to a region other than the photoelectric conversion element 9 in a misaligned state. Moreover, the temperature rise of the element mounting substrate 5 can be suppressed. As a result, it is possible to suppress an increase in the temperature of the element mounting substrate 5 and a decrease in the conversion efficiency of the photoelectric conversion element 9 due to heat generated due to the misalignment of the concentrated sunlight.

<光電変換モジュールの製造方法>
ここで、図1に示す光電変換モジュール1及び図2に示す光電変換装置2の製造方法を説明する。
<Method for producing photoelectric conversion module>
Here, a method for manufacturing the photoelectric conversion module 1 shown in FIG. 1 and the photoelectric conversion device 2 shown in FIG. 2 will be described.

まず、素子搭載基板5、台座6及び枠体10を準備する。素子搭載基板5、台座6及び枠体10が、例えば酸化アルミニウム質焼結体から成る場合、酸化アルミニウム、酸化珪素、酸化マグネシウム及び酸化カルシウム等の原料粉末に、有機バインダー、可塑剤又は溶剤等を添加混合して混合物を得る。そして、素子搭載基板5、台座6及び枠体10の型枠内に、混合物を充填して乾燥させた後、焼結前の素子搭載基板5、台座6及び枠体10を取り出す。   First, the element mounting substrate 5, the pedestal 6, and the frame 10 are prepared. When the element mounting substrate 5, the pedestal 6, and the frame 10 are made of, for example, an aluminum oxide sintered body, an organic binder, a plasticizer, a solvent, or the like is added to raw powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. Add and mix to obtain a mixture. The mixture of the element mounting substrate 5, the pedestal 6 and the frame 10 is filled with the mixture and dried, and then the element mounting substrate 5, the pedestal 6 and the frame 10 before being sintered are taken out.

また、タングステン又はモリブデン等の高融点金属粉末を準備し、この粉末に有機バインダー、可塑剤又は溶剤等を添加混合して金属ペーストを得る。   Moreover, a high melting point metal powder such as tungsten or molybdenum is prepared, and an organic binder, a plasticizer, a solvent, or the like is added to and mixed with the powder to obtain a metal paste.

そして、取り出した焼結前の素子搭載基板5の一主面に対して、例えばスクリーン印刷法を用いて、金属ペーストを塗って、第1の導電パターン7aとなるメタライズ層を形成する。また、素子搭載基板5の他主面に対して、熱伝導性基板12が当接される領域に、例えばスクリーン印刷法を用いて、金属ペーストを塗って、メタライズ層を形成する。   Then, a metal paste is applied to one main surface of the taken-out element mounting substrate 5 before sintering using, for example, a screen printing method to form a metallized layer that becomes the first conductive pattern 7a. Further, a metal paste is applied to a region where the heat conductive substrate 12 is brought into contact with the other main surface of the element mounting substrate 5 by using, for example, a screen printing method to form a metallized layer.

また、取り出した焼成前の未硬化の台座6上に、例えばスクリーン印刷法を用いて、金属ペーストを塗って、第2の導電パターン7bを形成する。また、取り出した焼結前の枠体10の支持部10aの傾斜面に対して、例えばスクリーン印刷法を用いて、金属ペーストを塗って、集光部材11との接合のためのメタライズ層を形成する。   Further, the second conductive pattern 7b is formed on the uncured pedestal 6 before firing by applying a metal paste using, for example, a screen printing method. In addition, a metal paste is applied to the inclined surface of the support portion 10a of the frame 10 before sintering taken out by using, for example, a screen printing method to form a metallized layer for joining with the light collecting member 11. To do.

さらに、素子搭載基板5の一主面に台座6及び枠体10を載せて加圧させることで、三者を密着させる。そして、三者を約1600℃の温度で焼成することにより、素子搭載基板5、台座6及び枠体10の一体品を作製することができる。その後、一体焼成された素子搭載基板5、台座6及び枠体10に、熱伝導性基板12を、素子搭載基板5の他主面に形成されたメタライズ層にロウ材を介して接合する。   Further, the pedestal 6 and the frame body 10 are placed on one main surface of the element mounting substrate 5 and pressed to bring the three members into close contact with each other. Then, by firing the three members at a temperature of about 1600 ° C., an integrated product of the element mounting substrate 5, the pedestal 6, and the frame body 10 can be manufactured. Thereafter, the thermally conductive substrate 12 is bonded to the metal mounting layer formed on the other main surface of the element mounting substrate 5 via the brazing material on the element mounting substrate 5, the pedestal 6, and the frame body 10 that are integrally fired.

次に、素子搭載基板5、台座6及び枠体10で囲まれる領域であって、第1の導電パターン7a上に、例えば、導電性エポキシ樹脂で光電変換素子9を実装する。そして、第1の導電パターン7aと光電変換素子9の下面電極とを電気的に接続する。また、第2の導電パターン7bから、光電変換素子7の上面電極に対して、導電性ワイヤを介して電気的に接続する。そして、枠体10の支持部10aに半田を介して集光部材11を接合する。このようにして、光電変換装置2を作製することができる。   Next, in a region surrounded by the element mounting substrate 5, the pedestal 6, and the frame 10, the photoelectric conversion element 9 is mounted on the first conductive pattern 7a with, for example, a conductive epoxy resin. Then, the first conductive pattern 7a and the lower electrode of the photoelectric conversion element 9 are electrically connected. Further, the second conductive pattern 7b is electrically connected to the upper surface electrode of the photoelectric conversion element 7 through a conductive wire. And the condensing member 11 is joined to the support part 10a of the frame 10 via solder. In this way, the photoelectric conversion device 2 can be manufactured.

次に、光電変換モジュール1の作製方法について説明する。まず、複数個の光電変換装置2と、外部基板4を準備する。ここでは、二つの光電変換装置2の接続方法について説明する。一方の光電変換装置2の第1の出力端子8aと他方の光電変換装置2の第2の出力端子8bとが隣り合うように、両者を配置する。そして、配置した二つの光電変換装置2を外部基板4上に設け、接続部材を介して配置した二つの光電変換装置2を接続する。その結果、二つの光電変換装置2を外部基板4に対して固定することができる。   Next, a method for manufacturing the photoelectric conversion module 1 will be described. First, a plurality of photoelectric conversion devices 2 and an external substrate 4 are prepared. Here, a method of connecting the two photoelectric conversion devices 2 will be described. Both are arrange | positioned so that the 1st output terminal 8a of one photoelectric conversion apparatus 2 and the 2nd output terminal 8b of the other photoelectric conversion apparatus 2 may adjoin. Then, the two arranged photoelectric conversion devices 2 are provided on the external substrate 4, and the two arranged photoelectric conversion devices 2 are connected via a connecting member. As a result, the two photoelectric conversion devices 2 can be fixed to the external substrate 4.

このようにして、光電変換装置2を外部基板4に固定することができる。同様にして、複数個の光電変換装置2を外部基板4に配置して固定する。そして、外部基板4に配置した複数個の光電変換装置2上に受光部材3を設けることで、光電変換モジュール1を作製することができる。   In this way, the photoelectric conversion device 2 can be fixed to the external substrate 4. Similarly, a plurality of photoelectric conversion devices 2 are arranged and fixed on the external substrate 4. And the photoelectric conversion module 1 can be produced by providing the light receiving member 3 on the plurality of photoelectric conversion devices 2 arranged on the external substrate 4.

<変形例>
本発明は上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。以下、本実施形態の変形例について説明する。なお、本実施形態の変形例に係る光電変換装置のうち、本実施形態に係る光電変換装置2と同様な部分については、同一の符号を付して適宜説明を省略する。
<Modification>
The present invention is not limited to the above-described embodiments, and various changes and improvements can be made without departing from the scope of the present invention. Hereinafter, modifications of the present embodiment will be described. Note that, in the photoelectric conversion device according to the modification of the present embodiment, the same portions as those of the photoelectric conversion device 2 according to the present embodiment are denoted by the same reference numerals, and description thereof is omitted as appropriate.

<変形例1>
上記実施例に係る光電変換装置2は、素子搭載基板5の一主面に第1の導電パターン7aが形成され、台座6に第2の導電パターン7bが形成され、その上に枠体10を配置する構造としているが、これに限らない。図6に示すように、素子搭載基板5の一主面に、第1の導電パターン7a及び第2の導電パターン7bを形成し、素子搭載基板5の一主面に枠体10を配置する構造にしてもよい。その結果、光電変換装置2は、素子搭載基板5と枠体10で構成される構造となり、台座6を使用しないため、製造プロセスを削減することができる。
<Modification 1>
In the photoelectric conversion device 2 according to the above embodiment, the first conductive pattern 7a is formed on one main surface of the element mounting substrate 5, the second conductive pattern 7b is formed on the pedestal 6, and the frame body 10 is formed thereon. Although it is set as the structure to arrange, it is not restricted to this. As shown in FIG. 6, a structure in which the first conductive pattern 7 a and the second conductive pattern 7 b are formed on one main surface of the element mounting substrate 5, and the frame body 10 is arranged on one main surface of the element mounting substrate 5. It may be. As a result, the photoelectric conversion device 2 has a structure constituted by the element mounting substrate 5 and the frame body 10 and does not use the pedestal 6, so that the manufacturing process can be reduced.

<変形例2>
上記実施形態に係る光電変換装置2は、熱伝導性基板12が、平面透視して、枠体10で囲まれる領域内に当接するように設けられているが、これに限らない。熱伝導性基板12が、図7に示すように、熱伝導性基板12が、平面透視して、枠体10で囲まれる領域内に当接するように設けられ、更に、熱伝導性基板12の両側面の一部が、素子搭載基板5の他主面に沿った方向に突出するとともに、素子搭載基板5の他主面と間を空けて設けられる延在部13を有している。
<Modification 2>
In the photoelectric conversion device 2 according to the above-described embodiment, the heat conductive substrate 12 is provided so as to come into contact with a region surrounded by the frame body 10 as seen through a plane, but is not limited thereto. As shown in FIG. 7, the heat conductive substrate 12 is provided so that the heat conductive substrate 12 comes into contact with a region surrounded by the frame body 10 in a plan view. A part of both side surfaces protrudes in a direction along the other main surface of the element mounting substrate 5, and has an extending portion 13 provided to be spaced from the other main surface of the element mounting substrate 5.

光電変換装置2は、図8に示すように、素子搭載基板5と当接する熱伝導性基板12の上面と対向する下面の面積を大きくするとともに、熱伝導性基板12は、平面透視して、枠体10で囲まれる領域内、すなわち、図8(B)に示すように、一点鎖線で囲まれる領域内で、素子搭載基板5に当接して設けられる。更に、熱伝導性基板12の延在部13は、図8(C)に示すように、素子搭載基板5の他主面との間に空隙A1を有して設けられる。なお、熱伝導性基板12は、平面透視して、枠体10で囲まれる領域内のみで、素子搭載基板5の他主面に当接されることが好ましく、また、熱伝導性基板12の延在部13は、平面透視して、枠体10の下面で、素子搭載基板5の他主面との間に空隙A1を有して設けられることが好ましい。   As shown in FIG. 8, the photoelectric conversion device 2 increases the area of the lower surface facing the upper surface of the thermal conductive substrate 12 in contact with the element mounting substrate 5, and the thermal conductive substrate 12 is seen through the plane. In the region surrounded by the frame 10, that is, as shown in FIG. 8B, it is provided in contact with the element mounting substrate 5 in the region surrounded by the alternate long and short dash line. Furthermore, the extending portion 13 of the heat conductive substrate 12 is provided with a gap A1 between the other main surface of the element mounting substrate 5 as shown in FIG. 8C. The heat conductive substrate 12 is preferably in contact with the other main surface of the element mounting substrate 5 only in a region surrounded by the frame body 10 in a plan view. The extending portion 13 is preferably provided with a gap A <b> 1 between the lower surface of the frame body 10 and the other main surface of the element mounting substrate 5 in a plan view.

光電変換装置2は、素子搭載基板5と当接する熱伝導性基板12の上面より下面の面積を大きくすることで、外部基板4上に固定する際に、光電変換装置2の安定性を向上させることができる。また、熱伝導性基板12に、螺子穴を設けて、外部基板4に螺子を締めて直接固定することで、より簡易的な固定ができる。   The photoelectric conversion device 2 improves the stability of the photoelectric conversion device 2 when it is fixed on the external substrate 4 by increasing the area of the lower surface from the upper surface of the thermally conductive substrate 12 that contacts the element mounting substrate 5. be able to. Further, by providing a screw hole in the heat conductive substrate 12 and fastening the screw to the external substrate 4 directly to fix the heat conductive substrate 12, simpler fixing can be performed.

また、素子搭載基板5の他主面との間に空隙A1を有することで、熱伝導性基板12から枠体10に伝わる熱を抑制することができる。その結果、枠体10に接合されている集光部材11は、光電変換素子9で発生した熱の影響が抑制される。   Moreover, the heat | fever transmitted from the heat conductive board | substrate 12 to the frame 10 can be suppressed by having space | gap A1 between the other main surfaces of the element mounting board | substrate 5. FIG. As a result, the influence of the heat generated in the photoelectric conversion element 9 is suppressed in the light collecting member 11 bonded to the frame body 10.

また、素子搭載基板5の他主面との間に空隙A1を有することで、光電変換素子9から発生する熱を、熱伝導性基板12を介して効果的に外部に放散することができる。   Further, by having the gap A <b> 1 between the other main surface of the element mounting substrate 5, the heat generated from the photoelectric conversion element 9 can be effectively dissipated to the outside through the thermally conductive substrate 12.

熱伝導性基板12の熱伝導率は、例えば、100W/(m・K)以上500W/(m・K)以下に設定されている。また、熱伝導性基板12は、図8(B)に示すように、平面透視した場合に、熱伝導性基板12と枠体10との距離Mは、集光部材11への熱伝導の抑制という点で、M1は、0.1mm以上3.0mm以下、M2は、0.1mm以上3.0mm以下、M3は、0.1mm以上3.0mm以下、M4は、0.1mm以上3.0mm以下にそれぞれ設定されることが好ましい。   The thermal conductivity of the thermally conductive substrate 12 is set to, for example, 100 W / (m · K) or more and 500 W / (m · K) or less. Further, as shown in FIG. 8B, when the heat conductive substrate 12 is seen through a plane, the distance M between the heat conductive substrate 12 and the frame body 10 is the suppression of heat conduction to the light collecting member 11. Therefore, M1 is 0.1 mm to 3.0 mm, M2 is 0.1 mm to 3.0 mm, M3 is 0.1 mm to 3.0 mm, and M4 is 0.1 mm to 3.0 mm. Each of the following is preferably set.

また、図8(C)に示すように、熱伝導性基板12の厚みT2は、素子搭載基板5と熱伝導性基板12との熱膨張係数の差による接合応力の緩和という点で、0.1mm以上1.0mm以下に設定されることが好ましい。   Further, as shown in FIG. 8C, the thickness T2 of the heat conductive substrate 12 is 0. 0 in terms of relaxation of bonding stress due to a difference in thermal expansion coefficient between the element mounting substrate 5 and the heat conductive substrate 12. It is preferably set to 1 mm or more and 1.0 mm or less.

また、素子搭載基板5の他主面との間の空隙A1は、集光部材11への熱伝導の抑制という点で、0.1mm以上3.0mm以下に設定されることが好ましい。   Further, the gap A1 between the other main surface of the element mounting substrate 5 is preferably set to 0.1 mm or more and 3.0 mm or less in terms of suppressing heat conduction to the light collecting member 11.

図8では、熱伝導性基板12の両側面の一部が、素子搭載基板5の他主面に沿った方向に突出するとともに、素子搭載基板5の他主面と間を空けて設けられる延在部13を有しているが、これに限らない。熱伝導性基板12の一方の側面の一部が素子搭載基板5の他主面に沿った方向に突出するとともに、素子搭載基板5の他主面と間を空けて設けられる延在部13を有し、熱伝導性基板12の他方の側面の一部は、平面透視して、枠体10で囲まれる領域内に設けてもよい。熱伝導性基板12は、平面透視して、枠体10で囲まれる領域内のみで、素子搭載基板5の他主面に当接されることが好ましい。   In FIG. 8, a part of both side surfaces of the heat conductive substrate 12 protrudes in a direction along the other main surface of the element mounting substrate 5, and is provided to be spaced from the other main surface of the element mounting substrate 5. Although it has the existing part 13, it is not restricted to this. A part of one side surface of the heat conductive substrate 12 protrudes in a direction along the other main surface of the element mounting substrate 5, and an extending portion 13 provided to be spaced from the other main surface of the element mounting substrate 5. And a part of the other side surface of the heat conductive substrate 12 may be provided in a region surrounded by the frame body 10 in a plan view. The heat conductive substrate 12 is preferably brought into contact with the other main surface of the element mounting substrate 5 only in a region surrounded by the frame body 10 as seen in a plan view.

<変形例3>
上記変形例2の光電変換装置2は、熱伝導性基板12が、熱伝導性基板12の両側面の一部を素子搭載基板5の他主面に沿った方向に突出するとともに、素子搭載基板5の他主面と間を空けて設けられる延在部13を有しているが、これに限らない。熱伝導性基板12が、図9に示すように、熱伝導性基板12が、平面透視して、枠体10で囲まれる領域内で当接するように設けられる。更に、熱伝導性基板12の両側面の一部が、素子搭載基板5の他主面に沿った方向に突出するとともに、素子搭載基板5の他主面と間を空けて設けられる延在部13を有し、平面透視して、熱伝導性基板12の延在部13が、第1の出力端子8aと第2の出力端子8bと重ならないように切り欠き部を有している。
<Modification 3>
In the photoelectric conversion device 2 of Modification 2 described above, the thermally conductive substrate 12 projects part of both side surfaces of the thermally conductive substrate 12 in a direction along the other main surface of the element mounting substrate 5, and the element mounting substrate. Although it has the extension part 13 provided in gap with the other main surface of 5, it is not restricted to this. As shown in FIG. 9, the heat conductive substrate 12 is provided so that the heat conductive substrate 12 abuts within a region surrounded by the frame body 10 as seen through a plane. Further, a part of both side surfaces of the heat conductive substrate 12 protrudes in a direction along the other main surface of the element mounting substrate 5, and an extending portion provided to be spaced from the other main surface of the element mounting substrate 5. 13 and has a cutout portion so that the extending portion 13 of the thermally conductive substrate 12 does not overlap the first output terminal 8a and the second output terminal 8b as seen in a plan view.

光電変換装置2は、図9に示すように、素子搭載基板5と当接する熱伝導性基板12の上面と対向する下面の面積を大きくするとともに、熱伝導性基板12は、平面透視して、枠体10で囲まれる領域内、すなわち、図9(B)に示すように、一点鎖線で囲まれる領域内で、素子搭載基板5に当接して設けられる。更に、図9(C)に示すように、熱伝導性基板12の延在部13は、素子搭載基板5の他主面との間に空隙A2を有して設けられる。なお、熱伝導性基板12は、平面透視して、枠体10で囲まれる領域内のみで、素子搭載基板5の他主面に当接されることが好ましく、また、熱伝導性基板12の延在部13は、平面透視して、枠体10の下面で、素子搭載基板5の他主面との間に空隙A1を有して設けられることが好ましい。   As shown in FIG. 9, the photoelectric conversion device 2 increases the area of the lower surface facing the upper surface of the heat conductive substrate 12 in contact with the element mounting substrate 5, and the heat conductive substrate 12 is seen through the plane. In the region surrounded by the frame 10, that is, as shown in FIG. 9B, it is provided in contact with the element mounting substrate 5 in the region surrounded by the alternate long and short dash line. Further, as shown in FIG. 9C, the extending portion 13 of the thermally conductive substrate 12 is provided with a gap A <b> 2 between the other main surface of the element mounting substrate 5. The heat conductive substrate 12 is preferably in contact with the other main surface of the element mounting substrate 5 only in a region surrounded by the frame body 10 in a plan view. The extending portion 13 is preferably provided with a gap A <b> 1 between the lower surface of the frame body 10 and the other main surface of the element mounting substrate 5 in a plan view.

光電変換装置2は、素子搭載基板5と当接する熱伝導性基板12の上面より下面の面積を大きくすることで、外部基板4上に固定する際に、光電変換装置2の安定性を向上させることができる。また、熱伝導性基板12に、螺子穴を設けて、外部基板4に螺子を締めて直接固定することで、より簡易的な固定ができる。   The photoelectric conversion device 2 improves the stability of the photoelectric conversion device 2 when it is fixed on the external substrate 4 by increasing the area of the lower surface from the upper surface of the thermally conductive substrate 12 that contacts the element mounting substrate 5. be able to. Further, by providing a screw hole in the heat conductive substrate 12 and fastening the screw to the external substrate 4 directly to fix the heat conductive substrate 12, simpler fixing can be performed.

また、素子搭載基板5の他主面との間に空隙A2を有することで、熱伝導性基板12から枠体10に伝わる熱を抑制することができる。その結果、枠体10に接合されている集光部材11は、光電変換素子9で発生した熱の影響が抑制される。   Moreover, the heat | fever transmitted from the heat conductive board | substrate 12 to the frame 10 can be suppressed by having space | gap A2 between the other main surfaces of the element mounting board | substrate 5. FIG. As a result, the influence of the heat generated in the photoelectric conversion element 9 is suppressed in the light collecting member 11 bonded to the frame body 10.

また、素子搭載基板5の他主面との間に空隙A2を有することで、光電変換素子9から発生する熱を、熱伝導性基板12を介して効果的に外部に放散することができる。   In addition, by having the gap A <b> 2 between the other main surface of the element mounting substrate 5, the heat generated from the photoelectric conversion element 9 can be effectively dissipated to the outside through the thermally conductive substrate 12.

また、熱伝導性基板12の一部が、平面透視して、第1の出力端子8aと第2の出力端子8bと重ならないように熱伝導性基板12の延在部13の一部に切り欠き部を有しているので、熱伝導性基板12が、熱伝導性基板12と第1の出力端子8aと第2の出力端子8bとの間で、電気的にショートすることを抑制することができる。   Further, a part of the heat conductive substrate 12 is cut into a part of the extending portion 13 of the heat conductive substrate 12 so as not to overlap the first output terminal 8a and the second output terminal 8b when seen in a plan view. Since it has a notch, the thermal conductive substrate 12 is prevented from being electrically short-circuited between the thermal conductive substrate 12, the first output terminal 8a, and the second output terminal 8b. Can do.

熱伝導性基板12の熱伝導率は、例えば、100W/(m・K)以上500W/(m・K)以下に設定されている。また、熱伝導性基板12は、図9(B)に示すように、平面透視した場合に、熱伝導性基板12と枠体10との距離Nは、集光部材11への熱伝導の抑制という点で、N1は、0.1mm以上3.0mm以下、N2は、0.1mm以上3.0mm以下、N3は、0.1mm以上3.0mm以下、N4は、0.1mm以上3.0mm以下にそれぞれ設定されることが好ましい。   The thermal conductivity of the thermally conductive substrate 12 is set to, for example, 100 W / (m · K) or more and 500 W / (m · K) or less. Further, as shown in FIG. 9B, when the heat conductive substrate 12 is seen through a plane, the distance N between the heat conductive substrate 12 and the frame body 10 is the suppression of heat conduction to the light collecting member 11. N1 is 0.1 mm or more and 3.0 mm or less, N2 is 0.1 mm or more and 3.0 mm or less, N3 is 0.1 mm or more and 3.0 mm or less, and N4 is 0.1 mm or more and 3.0 mm or less. Each of the following is preferably set.

また、平面透視した場合に、熱伝導性基板12の延在部13と第1の出力端子8a及び第2の出力端子8bとの間隙Sは、熱伝導性基板12の延在部13と第1の出力端子8a及び第2の出力端子8bとの電気的絶縁という点で、S1は、0.1mm以上3.0mm以下、S2は、0.1mm以上3.0mm以下,S3は、0.1mm以上3.0mm以下、S4は、0.1mm以上3.0mm以下に設定されることが好ましい。   In addition, when viewed through, the gap S between the extended portion 13 of the thermally conductive substrate 12 and the first output terminal 8a and the second output terminal 8b is equal to the extended portion 13 of the thermally conductive substrate 12 and the first output terminal 8b. S1 is 0.1 mm or more and 3.0 mm or less, S2 is 0.1 mm or more and 3.0 mm or less, and S3 is 0. 0 mm or less in terms of electrical insulation between the first output terminal 8a and the second output terminal 8b. 1 mm to 3.0 mm, and S4 is preferably set to 0.1 mm to 3.0 mm.

また、図9(C)に示すように、熱伝導性基板12の厚みT3は、素子搭載基板5と熱伝導性基板12との熱膨張係数の差による接合応力の緩和という点で、0.1mm以上1.0mm以下に設定されることが好ましい。   Further, as shown in FIG. 9C, the thickness T3 of the heat conductive substrate 12 is 0. 0 in terms of relaxation of bonding stress due to a difference in thermal expansion coefficient between the element mounting substrate 5 and the heat conductive substrate 12. It is preferably set to 1 mm or more and 1.0 mm or less.

また、素子搭載基板5の他主面との間の空隙A2は、集光部材11への熱伝導の抑制という点で、0.1mm以上3.0mm以下に設定されることが好ましい。   In addition, the gap A2 between the other main surface of the element mounting substrate 5 is preferably set to 0.1 mm or more and 3.0 mm or less in terms of suppressing heat conduction to the light collecting member 11.

図9では、熱伝導性基板12の両側面の一部が、素子搭載基板5の他主面に沿った方向に突出するとともに、素子搭載基板5の他主面と間を空けて設けられる延在部13を有しているが、これに限らない。熱伝導性基板12の一方の側面の一部を素子搭載基板5の他主面に沿った方向に突出するとともに、素子搭載基板5の他主面と間を設けて設けられる延在部13を有し、熱伝導性基板12の他方の側面の一部は、平面透視して、枠体10で囲まれる領域内に設けてもよい。熱伝導性基板12は、平面透視して、枠体10で囲まれる領域内のみで、素子搭載基板5の他主面に当接されることが好ましい。   In FIG. 9, a part of both side surfaces of the heat conductive substrate 12 protrudes in a direction along the other main surface of the element mounting substrate 5, and the extension provided to be spaced from the other main surface of the element mounting substrate 5. Although it has the existing part 13, it is not restricted to this. A part of one side surface of the heat conductive substrate 12 protrudes in a direction along the other main surface of the element mounting substrate 5, and an extending portion 13 provided between the other main surface of the element mounting substrate 5 is provided. And a part of the other side surface of the heat conductive substrate 12 may be provided in a region surrounded by the frame body 10 in a plan view. The heat conductive substrate 12 is preferably brought into contact with the other main surface of the element mounting substrate 5 only in a region surrounded by the frame body 10 as seen in a plan view.

1 光電変換モジュール
2 光電変換装置
3 受光部材
3a フレーム部材
3b レンズ部材
4 外部基板
5 素子搭載基板
6台座
7a 第1の導電パターン
7b 第2の導電パターン
8a 第1の出力端子
8b 第2の出力端子
9 光電変換素子
10 枠体
10a 支持部
10b 接合部材
11 集光部材
12 熱伝導性基板
13 延在部
SP 空間
A1、A2 空隙
S1〜S4 間隙
T1〜T3 熱伝導性基板の厚み
L1〜L4 枠体と熱伝導性基板との距離
M1〜M4 枠体と熱伝導性基板との距離
N1〜N4 枠体と熱伝導性基板との距離
DESCRIPTION OF SYMBOLS 1 Photoelectric conversion module 2 Photoelectric conversion apparatus 3 Light reception member 3a Frame member 3b Lens member 4 External substrate 5 Element mounting substrate 6 Base 7a 1st conductive pattern 7b 2nd conductive pattern 8a 1st output terminal 8b 2nd output terminal DESCRIPTION OF SYMBOLS 9 Photoelectric conversion element 10 Frame 10a Support part 10b Joining member 11 Condensing member 12 Thermal conductive substrate 13 Extension part SP Space A1, A2 Space | gap S1-S4 Gap T1-T3 Thermal conductive substrate thickness L1-L4 Frame Distance M1-M4 between frame and heat conductive substrate Distance N1-N4 between frame and heat conductive substrate Distance between frame and heat conductive substrate

Claims (5)

素子搭載基板と、
前記素子搭載基板の一主面に設けられる光電変換素子と、
前記素子搭載基板の一主面に前記光電変換素子を取り囲むように設けられる枠体と、
前記枠体に接合されるとともに、前記光電変換素子の上方に空間を介して設けられる集光部材と、
平面透視して、前記枠体で囲まれる領域内のみで、前記素子搭載基板の他主面に当接して設けられる熱伝導性基板と、を備え
前記熱伝導性基板の側面の一部は、前記素子搭載基板との当接部より外側であって前記素子搭載基板の他主面に沿った方向に突出するとともに、前記素子搭載基板の他主面から離れて設けられる延在部を有していることを特徴とする光電変換装置。
An element mounting substrate;
A photoelectric conversion element provided on one main surface of the element mounting substrate;
A frame provided to surround the photoelectric conversion element on one main surface of the element mounting substrate;
A condensing member that is joined to the frame and provided above the photoelectric conversion element via a space;
A heat conductive substrate provided in contact with the other main surface of the element mounting substrate only in a region surrounded by the frame body in a plan view ,
A part of the side surface of the thermally conductive substrate protrudes in a direction along the other main surface of the element mounting substrate outside the contact portion with the element mounting substrate, and the other main surface of the element mounting substrate. A photoelectric conversion device having an extending portion provided away from a surface .
請求項1に記載の光電変換装置であって、
前記光電変換素子と電気的に接続されるとともに、前記光電変換素子の出力を外部に取り出す第1の出力端子および第2の出力端子を有していることを特徴とする光電変換装置。
The photoelectric conversion device according to claim 1,
A photoelectric conversion device characterized by having a first output terminal and a second output terminal that are electrically connected to the photoelectric conversion element and take out the output of the photoelectric conversion element to the outside .
請求項2に記載の光電変換装置であって、
前記延在部は、平面透視して、前記枠体の外側の領域にまで延在されていることを特徴とする光電変換装置。
The photoelectric conversion device according to claim 2,
The photoelectric conversion device, wherein the extension part extends to a region outside the frame body as seen through a plane.
光電変換素子が搭載される搭載部を有した素子搭載基板と、
前記素子搭載基板の一主面に前記搭載部を取り囲むように設けられる枠体と、
前記枠体に接合されるとともに、前記光電変換素子の搭載予定位置よりも上方位置に設けられる集光部材と、
平面透視して、前記枠体で囲まれる領域内のみで、前記素子搭載基板の他主面に当接して設けられる熱伝導性基板と、を備え
前記熱伝導性基板の側面の一部は、前記素子搭載基板との当接部より外側であって前記素子搭載基板の他主面に沿った方向に突出するとともに、前記素子搭載基板の他主面から離れて設けられる延在部を有していることを特徴とする光電変換素子収納用パッケージ。
An element mounting substrate having a mounting portion on which a photoelectric conversion element is mounted;
A frame provided on one principal surface of the element mounting substrate so as to surround the mounting portion;
A condensing member that is joined to the frame body and provided at a position higher than the planned mounting position of the photoelectric conversion element;
A heat conductive substrate provided in contact with the other main surface of the element mounting substrate only in a region surrounded by the frame body in a plan view ,
A part of the side surface of the thermally conductive substrate protrudes in a direction along the other main surface of the element mounting substrate outside the contact portion with the element mounting substrate, and the other main surface of the element mounting substrate. A package for storing photoelectric conversion elements, characterized in that it has an extending portion provided away from the surface .
請求項1乃至請求項3のいずれか記載の光電変換装置と、
前記光電変換装置上に設けられ、前記集光部材に光を集める受光部材と、
を備えたことを特徴とする光電変換モジュール。
A photoelectric conversion device according to any one of claims 1 to 3,
A light receiving member provided on the photoelectric conversion device and collecting light on the light collecting member;
A photoelectric conversion module comprising:
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