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JP5404375B2 - Balance-unbalance converter - Google Patents
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JP5404375B2 - Balance-unbalance converter - Google Patents

Balance-unbalance converter Download PDF

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JP5404375B2
JP5404375B2 JP2009292037A JP2009292037A JP5404375B2 JP 5404375 B2 JP5404375 B2 JP 5404375B2 JP 2009292037 A JP2009292037 A JP 2009292037A JP 2009292037 A JP2009292037 A JP 2009292037A JP 5404375 B2 JP5404375 B2 JP 5404375B2
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frequency signal
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balanced
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JP2011135261A (en
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健太郎 宮里
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Kyocera Corp
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Description

本発明は、1つの入力信号を1対の平衡信号に変換して出力する機能を備えた平衡−不平衡変換器に関するものであり、特に高周波領域の電気特性が優れた小型の平衡−不平衡変換器に関するものである。   The present invention relates to a balanced-unbalanced converter having a function of converting one input signal into a pair of balanced signals and outputting them, and in particular, a compact balanced-unbalanced type having excellent electrical characteristics in a high frequency region. It relates to a converter.

1つの入力信号を1対の平衡信号(差動信号)に変換して出力する機能や2つの入力信号の位相差によって出力信号が出力されるポートを変更する機能を有する回路としてラットレース回路が知られている。ラットレース回路は、特定の長さを有する環状伝送線路の特定の位置に4つの入出力ポートを設けたものであり、環状伝送線路としてストリップラインやマイクロストリップラインを用いて構成したものが知られている(例えば、特許文献1を参照。)。   A rat race circuit is a circuit having a function of converting one input signal into a pair of balanced signals (differential signals) and outputting the same, and a function of changing a port from which an output signal is output according to a phase difference between two input signals. Are known. A rat race circuit is a circuit in which four input / output ports are provided at a specific position of an annular transmission line having a specific length, and a structure using a stripline or a microstrip line as an annular transmission line is known. (For example, refer to Patent Document 1).

特開2001−292012号公報JP 2001-292012 JP

しかしながら、特許文献1にて提案されたような従来のラットレース回路は以下のような幾つかの問題点を有していた。   However, the conventional rat race circuit as proposed in Patent Document 1 has several problems as follows.

第1の問題点は、使用する電気信号の高周波化にともなって特性が劣化してしまうことである。従来のラットレース回路はストリップラインやマイクロストリップラインを用いて環状伝送線路を形成していたため、高周波化に伴って環状伝送線路における伝送損失が増大し、これによってラットレース回路における損失が増大してしまうという問題があった。   The first problem is that the characteristics deteriorate as the electric signal used has a higher frequency. Since the conventional rat race circuit uses a strip line or a microstrip line to form an annular transmission line, the transmission loss in the annular transmission line increases as the frequency increases, and this increases the loss in the rat race circuit. There was a problem that.

第2の問題点は、サイズが大型化してしまうことである。ラットレース回路では、環状の伝送線路およびそれから放射状に延びる入出力線路が必要であるため、サイズが大型化してしまうという問題があった。特に、前述した第1の問題点を解決するために、高周波領域における伝送特性が優れた方形導波管を用いて環状の伝送線路を形成しようとすると、さらに大型化してしまうという問題があった。   The second problem is that the size increases. Since the rat race circuit requires an annular transmission line and an input / output line extending radially from the circuit, there is a problem that the size is increased. In particular, in order to solve the first problem described above, there is a problem that if an annular transmission line is formed using a rectangular waveguide having excellent transmission characteristics in a high frequency region, the size is further increased. .

本発明はこのような従来の技術における問題点に鑑みて案出されたものであり、その目的は、高周波領域の電気特性が優れた小型の平衡−不平衡変換器を提供することにある。   The present invention has been devised in view of such problems in the prior art, and an object thereof is to provide a compact balanced-unbalanced converter having excellent electric characteristics in a high-frequency region.

本発明の平衡−不平衡変換器は、誘電体基板,該誘電体基板の下面に配置された下側導体層,前記誘電体基板の上面に配置された上側導体層および高周波信号の伝播方向に前記高周波信号の波長の1/2未満の繰り返し間隔で前記上側導体層および前記下側導体層を電気的に接続するように配置された2列の側壁用貫通導体群を備え、前記上側導体層,前記下側導体層および前記2列の側壁用貫通導体群で囲まれた導波領域によって前記高周波信号が伝送される導波管型線路部と、前記誘電体基板の下面または上面に平衡信号が伝送可能な一対の線路導体が間隔をあけて配置された平衡線路部とを備え、前記導波管型線路部は、前記2列の側壁用貫通導体群の間に前記高周波信号の伝播方向に沿って前記高周波信号の波長の1/2未満の繰り返し間隔で前記上側導体層および前記下側導体層を電気的に接続するように配置された第1の分離壁用貫通導体群によって、前記高周波信号がTE10モードで伝播可能な第1および第2の導波路に前記導波領域が分割された第1部分と、該第1部分に接続された、前記導波領域全体で前記高周波信号がTE10モードおよびTE20モードで伝播可能な1つの導波路が構成された第2部分と、該第2部分に接続された、前記2列の側壁用貫通導体群の間に前記高周波信号の伝播方向に沿って前記高周波信号の波長の1/2未満の繰り返し間隔で前記上側導体層および前記下側導体層を電気的に接続するように配置された第2の分離壁用貫通導体群によって、前記高周波信号がTE10モードで伝播可能な第3および第4の導波路に前記導波領域が分割された第3部分と、該第3部分に接続された、前記導波領域全体で前記高周波信号がTE10モードおよびTE20モードで伝播可能な1つの導波路が構成された第4部分とで構成されており、前記第2部分は、TE10モードで通過する前記高周波信号の移相量とTE20モードで通過する前記高周波信号の移相量との差が90°に設定されており、前記第3および第4の導波路は、それぞれをTE10モードで通過する前記高周波信号の移相量の差が90°に設定されており、前記第4部分の前記第3部分に接続された側と反対側の端部において、前記誘電体基板の前記一対の線路導体が配置された面に位置する前記下側導体層または前記上側導体層に前記一対の線路導体が接続されて、前記導波管型線路部と前記平衡線路部とが接続されていることを特徴とするものである。このような構成を備える本例の平衡−不平衡変換器によれば、外部から第1または第2の導波路に高周波信号が入力されると、第2部分を介して第3および第4の導波路に互いに90°の位相差を有する高周波信号が入力され、第4部分を介して平衡線路部の一対の線路導体に互いに180°の位相差を有する高周波信号が入力されてそのまま出力されるので、1つの入力信号を1対の平衡信号(差動信号)に変換して出力する機能を備えた平衡−不平衡変換器を得ることができる。   The balanced-unbalanced converter of the present invention includes a dielectric substrate, a lower conductor layer disposed on the lower surface of the dielectric substrate, an upper conductor layer disposed on the upper surface of the dielectric substrate, and a high-frequency signal propagation direction. The upper conductor layer includes two rows of through conductor groups for side walls arranged to electrically connect the upper conductor layer and the lower conductor layer at a repetition interval of less than half of the wavelength of the high-frequency signal. , A waveguide-type line portion in which the high-frequency signal is transmitted by a waveguide region surrounded by the lower conductor layer and the two rows of through-wall conductor groups, and a balanced signal on the lower or upper surface of the dielectric substrate And a balanced line portion in which a pair of line conductors capable of transmitting are spaced apart, and the waveguide-type line portion has a propagation direction of the high-frequency signal between the two rows of through-conductor groups for side walls. Along the frequency of less than half of the wavelength of the high-frequency signal. The first and second high-frequency signals can be propagated in the TE10 mode by first separating wall through conductor groups arranged to electrically connect the upper conductor layer and the lower conductor layer at a distance from each other. A first portion in which the waveguide region is divided into the waveguide, and one waveguide connected to the first portion and capable of propagating the high-frequency signal in the TE10 mode and the TE20 mode throughout the waveguide region. A repetition of less than half of the wavelength of the high-frequency signal along the propagation direction of the high-frequency signal between the configured second portion and the two rows of side-wall through conductor groups connected to the second portion The third and fourth high-frequency signals can be propagated in the TE10 mode by the second through-wall through-wall conductor group arranged to electrically connect the upper conductor layer and the lower conductor layer at intervals. Waveguide into the waveguide A third part having a divided region, and a fourth part connected to the third part and configured as one waveguide capable of propagating the high-frequency signal in the TE10 mode and the TE20 mode throughout the waveguide region; The second portion is configured such that a difference between a phase shift amount of the high frequency signal passing in the TE10 mode and a phase shift amount of the high frequency signal passing in the TE20 mode is set to 90 °, The third and fourth waveguides each have a difference in phase shift amount of the high-frequency signal passing through the TE10 mode at 90 °, and the side of the fourth portion connected to the third portion At the opposite end, the pair of line conductors are connected to the lower conductor layer or the upper conductor layer located on the surface of the dielectric substrate on which the pair of line conductors are disposed, and the waveguide Connects the line section and the balanced line section And it is characterized in that they are. According to the balanced-unbalanced converter of this example having such a configuration, when a high-frequency signal is input from the outside to the first or second waveguide, the third and fourth through the second portion. High-frequency signals having a phase difference of 90 ° are input to the waveguide, and high-frequency signals having a phase difference of 180 ° are input to the pair of line conductors of the balanced line section via the fourth portion and output as they are. Therefore, a balanced-unbalanced converter having a function of converting one input signal into a pair of balanced signals (differential signals) and outputting the same can be obtained.

また、本発明の平衡−不平衡変換器は、上記構成において、前記第1および第2の導波路は、前記側壁用貫通導体群と前記第1の分離壁用貫通導体群との間隔が互いに等しく設定されており、前記第2部分は、TE10モードで通過する前記高周波信号の移相量とTE20モードで通過する前記高周波信号の移相量との差が90°になるように、前記高周波信号の伝播方向の長さおよび前記2つの側壁用貫通導体群の間隔が設定されており、前記第3および第4の導波路は、前記側壁用貫通導体群と前記第2の分離壁用貫通導体群との間隔が互いに異なっているとともに、それぞれをTE10モードで通過する前記高周波信号の移相量の差が90°になるように、前記高周波信号の伝播方向の長さおよびそれぞれの前記側壁用貫通導体群と前記第2の分離壁用貫通導体群との間隔が設定されていることを特徴とするものである。このような構成を備える本例の平衡−不平衡変換器によれば、導波領域内の誘電率を部分的に異ならせることなく、各導波路の幅(側壁用貫通導体群と各分離壁用貫通導体群との間隔または2つの側壁用貫通導体群の間の間隔)および長さ(高周波信号の伝播方向の長さ)によって、各導波路の移相量を設定できるので、製造が容易な平衡−不平衡変換器を得ることができる。   In the balanced-unbalanced converter according to the present invention, in the configuration described above, the first and second waveguides are spaced apart from each other through the side wall through conductor group and the first separation wall through conductor group. The high-frequency signal is set to be equal, and the second portion has the high-frequency signal so that a difference between a phase shift amount of the high-frequency signal passing in the TE10 mode and a phase shift amount of the high-frequency signal passing in the TE20 mode is 90 °. The length of the signal propagation direction and the interval between the two side wall through conductor groups are set, and the third and fourth waveguides pass through the side wall through conductor group and the second separation wall through hole. The length of the high-frequency signal in the propagation direction and each of the side walls are such that the distance from the conductor group is different from each other and the difference in phase shift amount of the high-frequency signal passing through each of them in the TE10 mode is 90 °. Penetrating conductor group and the second The distance between the separating wall through conductor group is set is characterized in. According to the balanced-unbalanced converter of this example having such a configuration, the width of each waveguide (the through-conductor group for the side wall and each separation wall) can be obtained without partially changing the dielectric constant in the waveguide region. Easy to manufacture because the phase shift amount of each waveguide can be set by the distance between the through-conductor group for use or the distance between the two through-hole conductor groups for the side wall) and the length (length in the propagation direction of the high-frequency signal) A balanced-unbalanced converter can be obtained.

なお、本明細書において、高周波信号の伝播方向とは、高周波信号が伝播して行く向きおよびその逆向きの両方が含まれる方向であり、2つの側壁が延びる方向にほぼ一致する方向である。   In this specification, the propagation direction of a high-frequency signal is a direction that includes both the direction in which the high-frequency signal propagates and the opposite direction, and is a direction that substantially coincides with the direction in which the two side walls extend.

上述した構成を備える本発明の平衡−不平衡変換器によれば、高周波領域の電気特性が優れた小型の平衡−不平衡変換器を得ることができる。   According to the balanced-unbalanced converter of the present invention having the above-described configuration, a small-sized balanced-unbalanced converter having excellent electric characteristics in a high frequency region can be obtained.

本発明の実施形態の一例の平衡−不平衡変換器を模式的に示す斜視図である。It is a perspective view which shows typically the balance-unbalance converter of an example of embodiment of this invention. 図1に示す平衡−不平衡変換器を模式的に示す平面図である。It is a top view which shows typically the balance-unbalance converter shown in FIG. 本発明の実施の形態の一例の平衡−不平衡変換器の電気特性を示すグラフである。It is a graph which shows the electrical property of the balance-unbalance converter of an example of embodiment of this invention. 本発明の実施の形態の一例の平衡−不平衡変換器の電気特性を示すグラフである。It is a graph which shows the electrical property of the balance-unbalance converter of an example of embodiment of this invention.

以下、本発明の平衡−不平衡変換器を添付の図面を参照しつつ詳細に説明する。   Hereinafter, the balanced-unbalanced converter of the present invention will be described in detail with reference to the accompanying drawings.

(実施の形態の例)
図1は本発明の第1の実施の形態の一例の平衡−不平衡変換器を模式的に示す斜視図である。図2は図1に示す平衡−不平衡変換器を模式的に示す平面図である。なお、図1および図2においては、構造をわかりやすくするために誘電体基板および上側導体層(上側の管壁)を透視した状態を示している。
(Example of embodiment)
FIG. 1 is a perspective view schematically showing a balanced-unbalanced converter as an example of the first embodiment of the present invention. FIG. 2 is a plan view schematically showing the balanced-unbalanced converter shown in FIG. 1 and 2 show a state in which the dielectric substrate and the upper conductor layer (upper tube wall) are seen through for easy understanding of the structure.

本例の平衡−不平衡変換器は、図1および図2に示すように、誘電体基板(図示せず),下側導体層31,上側導体層(図示せず),側壁用貫通導体群33a,33b,第1,第2の分離壁用貫通導体群35a,35b,整合用貫通導体群37,一対の線路導体51a,51bを備えている。また、本例の平衡−不平衡変換器は、高周波信号の伝播方向に沿って順次接続された第1〜第4部分41〜44によって構成された導波管型線路部40と、導波管型線路部40の第4部分44に接続された平衡線路部50とによって構成されている。   As shown in FIGS. 1 and 2, the balanced-unbalanced converter of this example includes a dielectric substrate (not shown), a lower conductor layer 31, an upper conductor layer (not shown), and a through conductor group for side walls. 33a, 33b, first and second separation wall through conductor groups 35a, 35b, a matching through conductor group 37, and a pair of line conductors 51a, 51b. Further, the balanced-unbalanced converter of this example includes a waveguide-type line portion 40 configured by first to fourth portions 41 to 44 sequentially connected along a propagation direction of a high-frequency signal, and a waveguide The balanced line portion 50 is connected to the fourth portion 44 of the mold line portion 40.

誘電体基板(図示せず)は、1層または複数層の誘電体層からなる。誘電体基板の誘電率は、誘電体基板の各部において等しくなるように設定されている。   A dielectric substrate (not shown) is composed of one or a plurality of dielectric layers. The dielectric constant of the dielectric substrate is set to be equal in each part of the dielectric substrate.

導波管型線路部40において、下側導体層31は、誘電体基板(図示せず)の下面に配置されており、導波管型線路部40の下側の管壁として機能する。上側導体層(図示せず)は、誘電体基板(図示せず)の上面に配置されており、導波管型線路部40の上側の管壁として機能する。2列の側壁用貫通導体群33a,33bは、高周波信号の伝播方向に高周波信号の波長の1/2未満の繰り返し間隔で下側導体層31および上側導体層(図示せず)を電気的に接続するように配置されており、導波管型線路部40の2つの側壁として機能する。導波管型線路部40においては、下側導体層31,上側導体層(図示せず)および2つの側壁用貫通導体群33a,33bによって囲まれた導波領域を高周波信号が伝播する。第1,第2の分離壁用貫通導体群35a,35bは、それぞれ2列の側壁用貫通導体群33a,33bの間に高周波信号の伝播方向に高周波信号の波長の1/2未満の繰り返し間隔で下側導体層31および上側導体層(図示せず)を電気的に接続するように配置されており、導波領域を幅方向に分割する分離壁として機能する。   In the waveguide line section 40, the lower conductor layer 31 is disposed on the lower surface of a dielectric substrate (not shown) and functions as a tube wall on the lower side of the waveguide line section 40. The upper conductor layer (not shown) is disposed on the upper surface of the dielectric substrate (not shown), and functions as the upper tube wall of the waveguide line section 40. The two rows of through-hole conductor groups 33a and 33b electrically connect the lower conductor layer 31 and the upper conductor layer (not shown) at a repetition interval less than ½ of the wavelength of the high-frequency signal in the propagation direction of the high-frequency signal. It arrange | positions so that it may connect and functions as two side walls of the waveguide type | mold line part 40. FIG. In the waveguide line section 40, a high-frequency signal propagates through a waveguide region surrounded by the lower conductor layer 31, an upper conductor layer (not shown), and the two sidewall through conductor groups 33a and 33b. The first and second separation wall through conductor groups 35a and 35b have a repetition interval of less than half the wavelength of the high frequency signal in the propagation direction of the high frequency signal between the two rows of through wall conductor groups 33a and 33b. The lower conductor layer 31 and the upper conductor layer (not shown) are arranged so as to be electrically connected, and function as a separation wall that divides the waveguide region in the width direction.

第1部分41は、第1の分離壁用貫通導体群35aによって、高周波信号がTE10モードで伝播可能な第1の導波路41aおよび第2の導波路41bに導波領域が分割されている。すなわち、図2にW1,W2で示した第1および第2の導波路41a,41bの幅(側壁用貫通導体群33a,33bと第1の分離壁用貫通導体群35aとの間隔)は、高周波信号の波長λの1/2より大きく且つλ以下に設定されている。また、第1および第2の導波路41a,41bは、それぞれの幅(W1,W2)および長さ(L1)が互いに等しくされており、これによって、それぞれをTE10モードで通過する高周波信号の移相量が互いに等しくなるように設定されている。   In the first portion 41, a waveguide region is divided into a first waveguide 41a and a second waveguide 41b through which a high-frequency signal can propagate in the TE10 mode by the first separating wall through conductor group 35a. That is, the widths of the first and second waveguides 41a and 41b indicated by W1 and W2 in FIG. 2 (the distance between the side wall through conductor groups 33a and 33b and the first separation wall through conductor group 35a) are: It is set to be larger than ½ of the wavelength λ of the high frequency signal and smaller than λ. Further, the first and second waveguides 41a and 41b are equal in width (W1, W2) and length (L1) to each other, so that a high-frequency signal passing through each of them in the TE10 mode can be transferred. The phase amounts are set to be equal to each other.

第2部分42は、第1部分41に接続されており、導波領域全体で高周波信号がTE10モードおよびTE20モードで伝播可能な1つの導波路が構成されている。すなわち、図2にW3で示した第2部分42の導波路の幅(側壁用貫通導体群33a,33bの間隔)は、高周波信号の波長λよりも大きく且つ1.5λ以下に設定されている。また、第2部分42は、TE10モードで通過する高周波信号の移相量とTE20モードで通過する高周波信号の移相量との差が90°になるように、高周波信号の伝播方向の長さ(L2)および導波路の幅(W3)が設定されている。なお、第2部分42を通過する高周波信号の移相量は、第1部分41および第3部分43との接続部を通過する際の移相量と第2部分42内を伝播することによる移相量とを含むものであり、TE10モードで通過する高周波信号の移相量がTE20モードで通過する高周波信号の移相量よりも90°大きくなるようにされている。   The second portion 42 is connected to the first portion 41 and constitutes one waveguide through which the high-frequency signal can propagate in the TE10 mode and the TE20 mode over the entire waveguide region. That is, the width of the waveguide of the second portion 42 (interval between the side wall through conductor groups 33a and 33b) indicated by W3 in FIG. 2 is set to be larger than the wavelength λ of the high-frequency signal and 1.5λ or less. Further, the second portion 42 has a length in the propagation direction of the high frequency signal so that a difference between the phase shift amount of the high frequency signal passing in the TE10 mode and the phase shift amount of the high frequency signal passing in the TE20 mode is 90 °. (L2) and the waveguide width (W3) are set. Note that the amount of phase shift of the high-frequency signal passing through the second portion 42 is the amount of phase shift when passing through the connection portion between the first portion 41 and the third portion 43 and the amount of phase shift caused by propagating through the second portion 42. The phase shift amount of the high frequency signal passing in the TE10 mode is 90 ° larger than the phase shift amount of the high frequency signal passing in the TE20 mode.

第3部分43は、第2の分離壁用貫通導体群35bによって、高周波信号がTE10モードで伝播可能な第3の導波路43aおよび第4の導波路43bに導波領域が分割されている。すなわち、図2にW4で示した第3の導波路43aの幅(側壁用貫通導体群33aと第2の分離壁用貫通導体群35bとの間隔)およびW5で示した第4の導波路43bの幅(側壁用貫通導体群33bと第2の分離壁用貫通導体群35bとの間隔)は、それぞれ高周波信号の波長λの1/2より大きく且つλ以下に設定されている。また、第3の導波路43aおよび第4の導波路43bは、それぞれの導波路の幅(W4,W5)が互いに異なっているとともに、それぞれをTE10モードで通過する高周波信号の移相量の差が90°になるように、高周波信号の伝播方向の長さ(L3)およびそれぞれの導波路の幅(W4,W5)が設定されている。   In the third portion 43, the waveguide region is divided into a third waveguide 43a and a fourth waveguide 43b through which a high-frequency signal can propagate in the TE10 mode by the second through-wall group 35b for the separation wall. That is, the width of the third waveguide 43a indicated by W4 in FIG. 2 (the distance between the side wall through conductor group 33a and the second separation wall through conductor group 35b) and the fourth waveguide 43b indicated by W5. The width (the distance between the side wall through conductor group 33b and the second separation wall through conductor group 35b) is set to be larger than ½ of the wavelength λ of the high frequency signal and smaller than λ. The third waveguide 43a and the fourth waveguide 43b have different waveguide widths (W4, W5), and the difference in the amount of phase shift of the high-frequency signal that passes through each of them in the TE10 mode. The length in the propagation direction of the high-frequency signal (L3) and the width of each waveguide (W4, W5) are set so that is 90 °.

ここで、第3の導波路43aおよび第4の導波路43bを通過する高周波信号の位相差が90°になるには、第3の導波路43aにおける管内波長をλ[m],第4の導波路43bにおける管内波長をλ[m],第3の導波路43aおよび第4の導波路43bの高周波伝播方向の長さをL[m]とすると、
L=(4|λ -1 -1|)-1 ・・・(1)
を満足すればよい。また、管内波長は導波管の幅によって変化するため、高周波信号の周波数をf[Hz],光速をC[m/s],導波領域の比誘電率をEr,第3の導波路43aの幅をW[m],第4の導波路43bの幅をW[m]とすると、上記(1)式は次のようになる。
Here, in order for the phase difference of the high-frequency signal passing through the third waveguide 43a and the fourth waveguide 43b to be 90 °, the in-tube wavelength in the third waveguide 43a is set to λ 3 [m], When the guide wavelength in the waveguide 43b is λ 4 [m], and the lengths of the third waveguide 43a and the fourth waveguide 43b in the high-frequency propagation direction are L 3 [m],
L 3 = (4 | λ 3 -14 -1 |) -1 (1)
Should be satisfied. Further, since the guide wavelength varies depending on the width of the waveguide, the frequency of the high-frequency signal is f [Hz], the speed of light is C [m / s], the relative permittivity of the waveguide region is Er, and the third waveguide 43a. Is W 4 [m] and the width of the fourth waveguide 43b is W 5 [m], the above equation (1) is as follows.

L=WWC|2W(4W fEr-C)0.5-2W(4W fEr-C)0.5|-1 ・・・(2)
すなわち、上記(2)式を満足するように、第3の導波路43aの幅W,第4の導波路43bの幅Wならびに第3および第4の導波路43a,43bの高周波伝播方向の長さをLを設定することにより、第3の導波路43aおよび第4の導波路43bを通過する高周波信号の位相差を90°にすることができる。
L 3 = W 4 W 5 C | 2W 5 (4W 4 2 f 2 Er-C 2 ) 0.5 -2W 4 (4W 5 2 f 2 Er-C 2 ) 0.5 | -1 (2)
In other words, so as to satisfy the above expression (2), the width W 4 of the third waveguide 43a, the width W 5 and the third and fourth waveguides 43a of the fourth waveguide 43 b, 43 b of the high-frequency propagation direction of the length by setting L 3, the phase difference between the high-frequency signal passing through the third waveguide 43a and the fourth waveguide 43b can be 90 °.

なお、本例の平衡−不平衡変換器においては、第3の導波路43aの幅Wは第4の導波路43bの幅Wよりも小さくされており、第3の導波路43aにおける管内波長λは第4の導波路43bにおける管内波長λよりも大きくされている。すなわち、第3の導波路43aをTE10モードで通過する高周波信号の移相量は、第4の導波路43bをTE10モードで通過する高周波信号の移相量よりも90°小さく設定されている。 Incidentally, the equilibrium of this example - in the unbalanced transformer, the width W 4 of the third waveguide 43a is smaller than the width W 5 of the fourth waveguide 43 b, the tube in the third waveguide 43a The wavelength λ 3 is set larger than the guide wavelength λ 4 in the fourth waveguide 43b. That is, the phase shift amount of the high frequency signal passing through the third waveguide 43a in the TE10 mode is set to be 90 ° smaller than the phase shift amount of the high frequency signal passing through the fourth waveguide 43b in the TE10 mode.

また、第3部分43と第4部分44の間には、下側導体層31と上側導体層(図示せず)とを接続する整合用貫通導体群37が設けられており、第3部分43と第4部分44とのインピーダンス整合および高周波信号の分配比率調整の働きをしている。   Further, a matching through conductor group 37 for connecting the lower conductor layer 31 and the upper conductor layer (not shown) is provided between the third portion 43 and the fourth portion 44, and the third portion 43 And the fourth portion 44 for impedance matching and high-frequency signal distribution ratio adjustment.

第4部分44は、第3部分43に接続されており、導波領域全体で高周波信号がTE10モードおよびTE20モードで伝播可能な1つの導波路が構成されている。すなわち、図2にW6で示した第4部分44の導波路の幅(側壁用貫通導体群33a,33bの間隔)は、高周波信号の波長λよりも大きく且つ1.5λ以下に設定されている。第4部分44の導波路の長さ(L4)は適宜設定される。   The fourth portion 44 is connected to the third portion 43, and constitutes one waveguide through which the high-frequency signal can propagate in the TE10 mode and the TE20 mode over the entire waveguide region. That is, the width of the waveguide of the fourth portion 44 (interval between the side wall through conductor groups 33a and 33b) indicated by W6 in FIG. 2 is set to be larger than the wavelength λ of the high frequency signal and not more than 1.5λ. The length (L4) of the waveguide of the fourth portion 44 is set as appropriate.

平衡線路部50では、誘電体基板(図示せず)の下面に平衡信号が伝送可能な一対の線路導体51a,51bが間隔をあけて配置されている。そして、一対の線路導体51a,51bの一方端は、第4部分44の第3部分43に接続された側と反対側の端部において、下側導体層31に接続されている。なお、一対の線路導体51a,51bの一方端は、第4部分44の導波路の中央部(2つの側壁用貫通導体群33a,33b間の中央部)に接続されている。そして、下側導体層31と一対の線路導体51a,51bとの接続部が導波管型線路部40と平衡線路部50との接続部になっている。また、誘電体基板(図示せず)の上面では導波管型線路部40の上側導体層(図示せず)が平衡線路部50まで延長されており、平衡線路部50において電界を誘電体基板(図示せず)内に偏在させることによって導波管型線路部40と平衡線路部50との接続を良好なものにする働きをしている。   In the balanced line section 50, a pair of line conductors 51a and 51b capable of transmitting a balanced signal are disposed on the lower surface of a dielectric substrate (not shown) with a gap therebetween. One end of each of the pair of line conductors 51 a and 51 b is connected to the lower conductor layer 31 at the end of the fourth portion 44 opposite to the side connected to the third portion 43. One end of the pair of line conductors 51a and 51b is connected to the central portion of the waveguide of the fourth portion 44 (the central portion between the two side wall through conductor groups 33a and 33b). A connection portion between the lower conductor layer 31 and the pair of line conductors 51a and 51b is a connection portion between the waveguide line portion 40 and the balanced line portion 50. Further, on the upper surface of the dielectric substrate (not shown), the upper conductor layer (not shown) of the waveguide type line portion 40 is extended to the balanced line portion 50, and the electric field is transferred to the dielectric substrate at the balanced line portion 50. It serves to improve the connection between the waveguide-type line unit 40 and the balanced line unit 50 by being unevenly distributed in (not shown).

次に、このような構成を備える本例の平衡−不平衡変換器の動作について説明する。外部回路から第1の導波路41aに入力された高周波信号は、第2部分42をTE10モードおよびTE20モードの両方で伝播して、第3の導波路43aおよび第4の導波路43bに入力される。このとき、第2部分42は、TE10モードで通過する高周波信号の移相量とTE20モードで通過する高周波信号の移相量との差が90°に設定されているので、第3の導波路43aに入力される高周波信号と第4の導波路43bに入力される高周波信号との位相差は約90°になる。すなわち、第3の導波路43aに入力される高周波信号の位相は、第4の導波路43bに入力される高周波信号の位相よりも90°遅れている。また、第3の導波路43aに入力される高周波信号の振幅と第4の導波路43bに入力される高周波信号の振幅が等しくなるように、側壁用貫通導体群33a,33bの位置が微調整されている。なお、第1の導波路41aから第2部分42に入力された高周波信号は、TE10モードとTE20モードとが打ち消し合うことによって第2の導波路41bには殆ど出力されない。   Next, the operation of the balanced-unbalanced converter of this example having such a configuration will be described. The high-frequency signal input from the external circuit to the first waveguide 41a propagates through the second portion 42 in both the TE10 mode and the TE20 mode, and is input to the third waveguide 43a and the fourth waveguide 43b. The At this time, since the difference between the phase shift amount of the high-frequency signal passing in the TE10 mode and the phase shift amount of the high-frequency signal passing in the TE20 mode is set to 90 ° in the second portion 42, the third waveguide The phase difference between the high frequency signal input to 43a and the high frequency signal input to the fourth waveguide 43b is approximately 90 °. That is, the phase of the high-frequency signal input to the third waveguide 43a is delayed by 90 ° from the phase of the high-frequency signal input to the fourth waveguide 43b. Further, the positions of the through-hole conductor groups 33a and 33b for side walls are finely adjusted so that the amplitude of the high-frequency signal input to the third waveguide 43a is equal to the amplitude of the high-frequency signal input to the fourth waveguide 43b. Has been. Note that the high-frequency signal input from the first waveguide 41a to the second portion 42 is hardly output to the second waveguide 41b because the TE10 mode and the TE20 mode cancel each other.

第2部分42から第3の導波路43aおよび第4の導波路43bに入力された高周波信号は、第3の導波路43aおよび第4の導波路43bをTE10モードで伝播して、それぞれ第4部分44に入力される。このとき、第3の導波路43aをTE10モードで通過する高周波信号の移相量は、第4の導波路43bをTE10モードで通過する高周波信号の移相量よりも90°小さく設定されていることから、第3の導波路43aから第4部分44へ出力される高周波信号の位相と、第4の導波路43bから第4部分44へ出力される高周波信号の位相とは、互いに180°異なるものになる。このようにして、互いに振幅が等しく位相が180°異なる高周波信号が第3の導波路43aおよび第4の導波路43bから第4部分44へ入力される。   The high-frequency signals input from the second portion 42 to the third waveguide 43a and the fourth waveguide 43b propagate in the TE10 mode through the third waveguide 43a and the fourth waveguide 43b, respectively. Entered in portion 44. At this time, the phase shift amount of the high-frequency signal passing through the third waveguide 43a in the TE10 mode is set to be 90 ° smaller than the phase shift amount of the high-frequency signal passing through the fourth waveguide 43b in the TE10 mode. Therefore, the phase of the high-frequency signal output from the third waveguide 43a to the fourth portion 44 is different from the phase of the high-frequency signal output from the fourth waveguide 43b to the fourth portion 44 by 180 °. Become a thing. In this way, high-frequency signals having the same amplitude and different phases by 180 ° are input from the third waveguide 43a and the fourth waveguide 43b to the fourth portion 44.

入力された高周波信号はTE20モードで第4部分44を伝播して、そのまま一対の線路導体51a,51bに入力される。よって、線路導体51aに入力される高周波信号と線路導体51bに入力される高周波信号とは、互いに振幅が等しく位相が180°異なるものになる。   The input high-frequency signal propagates through the fourth portion 44 in the TE20 mode and is input as it is to the pair of line conductors 51a and 51b. Therefore, the high frequency signal input to the line conductor 51a and the high frequency signal input to the line conductor 51b have the same amplitude and a phase difference of 180 °.

入力された高周波信号は、一対の線路導体51a,51bをそれぞれ伝播して、一対の線路導体51a,51bから外部へ出力される。このとき、一対の線路導体51a,51bは、それぞれを通過する高周波信号の移相量が互いに等しくなるように、幅および長さの両方とも等しく設定されているため、一対の線路導体51a,51bから出力される一対の高周波信号は、互いに振幅が等しく位相が180°異なる平衡信号(差動信号)となる。   The input high-frequency signal propagates through the pair of line conductors 51a and 51b, and is output to the outside from the pair of line conductors 51a and 51b. At this time, the pair of line conductors 51a and 51b are set to be equal in both width and length so that the phase shift amounts of the high-frequency signals passing through the pair of line conductors 51a and 51b are equal to each other. The pair of high-frequency signals output from the signal are balanced signals (differential signals) having the same amplitude and different phases by 180 °.

このようにして、本例の平衡−不平衡変換器によれば、第1の導波路41aに入力された高周波信号を一対の平衡信号(差動信号)に変換して一対の線路導体51a,51bから出力することができる。また、一対の線路導体51a,51bに平衡信号を入力すると、上述したプロセスと逆のプロセスによって、第1の導波路41aから高周波信号を出力することができる。   Thus, according to the balanced-unbalanced converter of this example, the high-frequency signal input to the first waveguide 41a is converted into a pair of balanced signals (differential signals), and a pair of line conductors 51a, 51b can be output. When a balanced signal is input to the pair of line conductors 51a and 51b, a high-frequency signal can be output from the first waveguide 41a by a process reverse to the above-described process.

また、外部回路から第2の導波路41bに高周波信号が入力された場合には、第2部分42をTE10モードおよびTE20モードの両方で伝播して第3の導波路43aに入力される高周波信号は、第4の導波路43bに入力される高周波信号よりも位相が90°進んだものとなる。第3の導波路43aをTE10モードで通過する高周波信号の移相量は、第4の導波路43bをTE10モードで通過する高周波信号の移相量よりも90°小さく設定されていることから、第3の導波路43aから第4部分44へ出力される高周波信号は、第4の導波路43bから第4部分44へ出力される高周波信号と位相の等しい信号になる。第3の導波路43aおよび第4の導波路43bから入力された位相および振幅の等しい高周波信号は、第4部分44をTE10モードで伝播して、そのまま一対の線路導体51a,51bに入力される。よって、線路導体51aに入力される高周波信号と線路導体51bに入力される高周波信号とは、互いに同相同振幅の信号になる。一対の線路導体51a,51bは、それぞれを通過する高周波信号の移相量が互いに等しくなるように設定されているため、一対の線路導体51a,51bから出力される一対の高周波信号も、互いに同相同振幅の信号となる。   When a high-frequency signal is input from the external circuit to the second waveguide 41b, the high-frequency signal propagates through the second portion 42 in both the TE10 mode and the TE20 mode and is input to the third waveguide 43a. Is a phase advanced by 90 ° from the high-frequency signal input to the fourth waveguide 43b. Since the phase shift amount of the high frequency signal passing through the third waveguide 43a in the TE10 mode is set to be 90 ° smaller than the phase shift amount of the high frequency signal passing through the fourth waveguide 43b in the TE10 mode, The high frequency signal output from the third waveguide 43a to the fourth portion 44 is a signal having the same phase as the high frequency signal output from the fourth waveguide 43b to the fourth portion 44. High-frequency signals having the same phase and amplitude input from the third waveguide 43a and the fourth waveguide 43b propagate through the fourth portion 44 in the TE10 mode and are input to the pair of line conductors 51a and 51b as they are. . Therefore, the high-frequency signal input to the line conductor 51a and the high-frequency signal input to the line conductor 51b are signals having the same homologous amplitude. Since the pair of line conductors 51a and 51b are set so that the phase shift amounts of the high-frequency signals passing through the pair of line conductors 51a and 51b are equal to each other, the pair of high-frequency signals output from the pair of line conductors 51a and 51b are also the same. It becomes a signal of homologous amplitude.

このようにして、本例の平衡−不平衡変換器によれば、第2の導波路41bに入力された高周波信号を一対の同相同振幅の信号に変換して一対の線路導体51a,51bから出力することができる。また、外部から一対の線路導体51a,51bに同相同振幅の高周波信号を入力すると、上述したプロセスと逆のプロセスによって、第2の導波路41bから高周波信号を出力することができる。   Thus, according to the balanced-unbalanced converter of the present example, the high-frequency signal input to the second waveguide 41b is converted into a pair of signals having the same homologous amplitude, and the pair of line conductors 51a and 51b are used. Can be output. When a high-frequency signal having the same amplitude is input to the pair of line conductors 51a and 51b from the outside, the high-frequency signal can be output from the second waveguide 41b by a process reverse to the above-described process.

さらに、外部から一対の線路導体51a,51bに入力される信号の位相差φが、0<φ<180°の場合には、高周波信号が第4部分44をTE10モードおよびTE20モードの両方で伝播する。そして、第3および第4の導波路43a,43bならびに第2部分42を経て、第1の導波路41aおよび第2の導波路41bの両方から高周波信号を出力することができる。このとき、一対の線路導体51a,51bに入力される信号の位相差を変化させることにより、第1の導波路41aおよび第2の導波路41bから出力される高周波信号の分配比率を変えることができる。   Further, when the phase difference φ of the signals input from the outside to the pair of line conductors 51a and 51b is 0 <φ <180 °, the high-frequency signal propagates through the fourth portion 44 in both the TE10 mode and the TE20 mode. To do. A high-frequency signal can be output from both the first waveguide 41a and the second waveguide 41b via the third and fourth waveguides 43a and 43b and the second portion 42. At this time, the distribution ratio of the high-frequency signals output from the first waveguide 41a and the second waveguide 41b can be changed by changing the phase difference between the signals input to the pair of line conductors 51a and 51b. it can.

上述したように、本例の平衡−不平衡変換器によれば、ラットレース回路と同様の種々の機能を備えた平衡−不平衡変換器を得ることができる。また、ラットレース回路と比較して幅方向の寸法が非常に小さく、ストリップラインやマイクロストリップラインを用いた従来のラットレース回路と比較して高周波領域での伝送損失が非常に小さくなる。このように、高周波領域の電気特性が優れた小型の平衡−不平衡変換器を得ることができる。   As described above, according to the balanced-unbalanced converter of this example, a balanced-unbalanced converter having various functions similar to the rat race circuit can be obtained. Further, the dimension in the width direction is very small as compared with the rat race circuit, and the transmission loss in the high frequency region is very small as compared with the conventional rat race circuit using the stripline or the microstrip line. In this manner, a small balanced-unbalanced converter having excellent electrical characteristics in the high frequency region can be obtained.

また、本例の平衡−不平衡変換器によれば、第1および第2の導波路41a,41bの幅が互いに等しく設定されており、第2部分42は、TE10モードで通過する高周波信号の移相量とTE20モードで通過する高周波信号の移相量との差が90°になるように、幅および長さが設定されており、第3および第4の導波路43a,43bは、それぞれをTE10モードで通過する高周波信号の移相量の差が90°になるように、それぞれの幅および長さが設定されていることから、導波領域内の誘電率を部分的に異ならせることなく、各導波路の移相量を設定できるので、製造が容易な平衡−不平衡変換器を得ることができる。   In addition, according to the balanced-unbalanced converter of this example, the widths of the first and second waveguides 41a and 41b are set to be equal to each other, and the second portion 42 is a high-frequency signal that passes in the TE10 mode. The width and length are set so that the difference between the phase shift amount and the phase shift amount of the high-frequency signal passing through the TE20 mode is 90 °, and the third and fourth waveguides 43a and 43b are respectively Since the respective widths and lengths are set so that the difference in phase shift amount of the high-frequency signal passing through the TE10 mode in the TE10 mode is 90 °, the dielectric constant in the waveguide region may be partially different. Since the phase shift amount of each waveguide can be set, a balanced-unbalanced converter that can be easily manufactured can be obtained.

さらに、上述した構成を備える本例の平衡−不平衡変換器によれば、周知のテープ多層技術を用いて誘電体基板(図示せず)に平衡−不平衡変換器を形成することができるので、小型で製造が容易な平衡−不平衡変換器を得ることができる。   Further, according to the balanced-unbalanced converter of this example having the above-described configuration, the balanced-unbalanced converter can be formed on a dielectric substrate (not shown) using a known tape multilayer technology. Thus, a balanced and unbalanced converter that is small and easy to manufacture can be obtained.

本例の平衡−不平衡変換器において、誘電体基板の比誘電率は、例えば2〜20程度とされる。誘電体基板の材質としては、高周波信号の伝送を妨げない特性を有するものであれば特に限定するものではなく、ガラスエポキシ等の樹脂を使用することも可能であるが、平衡−不平衡変換器を形成する際の精度および製造の容易性の点からは誘電体セラミックスを使用することが望ましい。下側導体層31,上側導体層(図示せず)は、良導電性の金属からなり、その厚みは、例えば、3μm〜50μm程度とされる。側壁用貫通導体群33a,33bおよび第1,第2の分離壁用貫通導体群35a,35bの繰り返し間隔は、高周波信号の漏洩を防止する観点から、高周波信号の波長の1/2未満であることが必要であり、1/4未満であることが好ましい。側壁用貫通導体群33a,33bおよび第1,第2の分離壁用貫通導体群35a,35bとしてはビアホールやスルーホールを用いることができ、その直径は、例えば0.05mm〜0.5mm程度とされる。   In the balanced-unbalanced converter of this example, the relative permittivity of the dielectric substrate is, for example, about 2-20. The material of the dielectric substrate is not particularly limited as long as it has a characteristic that does not hinder the transmission of high-frequency signals. A resin such as glass epoxy can be used, but a balanced-unbalanced converter can be used. It is desirable to use dielectric ceramics from the viewpoints of accuracy in forming and ease of manufacturing. The lower conductor layer 31 and the upper conductor layer (not shown) are made of a highly conductive metal and have a thickness of, for example, about 3 μm to 50 μm. The repetition interval between the side wall through conductor groups 33a and 33b and the first and second separation wall through conductor groups 35a and 35b is less than ½ of the wavelength of the high frequency signal from the viewpoint of preventing leakage of the high frequency signal. It is necessary that it is less than ¼. Via holes and through holes can be used as the side wall through conductor groups 33a and 33b and the first and second separation wall through conductor groups 35a and 35b, and the diameter thereof is, for example, about 0.05 mm to 0.5 mm. .

本例の平衡−不平衡変換器は、例えば、次のようにして作製することができる。まず、ガラス,アルミナ,窒化アルミニウム等を主成分とするセラミック原料粉末に適当な有機溶剤と溶媒とを添加混合して得た泥漿を用いて、ドクターブレード法やカレンダーロール法等によってセラミックグリーンシートを作製する。次に、得られたセラミックグリーンシートにパンチングマシーン等を用いて側壁用貫通導体群33a,33bおよび第1,第2の分離壁用貫通導体群35a,35bを形成するための貫通孔を形成し、金属粉末に適当なアルミナ・シリカ・マグネシア等の酸化物や有機溶剤等を添加混合してペースト状にしたものを、厚膜印刷法により貫通孔に充填するとともにセラミックグリーンシートの表面に塗布して導体ペースト付きセラミックグリーンシートを作製する。次に、得られた導体ペースト付きセラミックグリーンシートを積層し、ホットプレス装置を用いて圧着して積層体を形成する。そして、得られた積層体を、誘電体層がガラスセラミックスの場合は850℃〜1000℃程度、アルミナ質セラミックスの場合は1500℃〜1700℃程度、窒化アルミニウム質セラミックスの場合は1600℃〜1900℃程度のピーク温度で焼成することによって作製される。なお、金属粉末としては、誘電体層がガラスセラミックスの場合は銅,金または銀が、誘電体層がアルミナ質セラミックスまたは窒化アルミニウム質セラミックスの場合にはタングステンまたはモリブデンが好適である。   The balanced-unbalanced converter of this example can be manufactured as follows, for example. First, using a slurry obtained by adding and mixing a suitable organic solvent and solvent to a ceramic raw material powder mainly composed of glass, alumina, aluminum nitride, etc., a ceramic green sheet is formed by a doctor blade method or a calender roll method. Make it. Next, through holes for forming the side wall through conductor groups 33a and 33b and the first and second separation wall through conductor groups 35a and 35b are formed in the obtained ceramic green sheet using a punching machine or the like. A paste made by adding an appropriate oxide, organic solvent, etc. such as alumina, silica, magnesia, etc. to metal powder is filled into the through-holes by thick film printing and applied to the surface of the ceramic green sheet. To produce a ceramic green sheet with a conductive paste. Next, the obtained ceramic green sheets with a conductive paste are laminated and pressed using a hot press apparatus to form a laminate. And when the dielectric layer is made of glass ceramics, the obtained laminate is about 850 ° C. to 1000 ° C., alumina ceramics is about 1500 ° C. to 1700 ° C., and aluminum nitride ceramics is about 1600 ° C. to 1900 ° C. It is produced by firing at a peak temperature of about. The metal powder is preferably copper, gold or silver when the dielectric layer is glass ceramic, and tungsten or molybdenum when the dielectric layer is alumina ceramic or aluminum nitride ceramic.

(変形例)
本発明は上述した実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更,改良が可能である。
(Modification)
The present invention is not limited to the embodiments described above, and various modifications and improvements can be made without departing from the scope of the present invention.

例えば、上述した実施の形態の例においては、第3の導波路43aの幅(W4)が第4の導波路43bの幅(W5)よりも小さくされて、第3の導波路43aをTE10モードで通過する高周波信号の移相量が、第4の導波路43bをTE10モードで通過する高周波信号の移相量よりも90°小さくされた例を示したが、これに限定されるものではない。第3の導波路43aをTE10モードで通過する高周波信号の移相量が、第4の導波路43bをTE10モードで通過する高周波信号の移相量よりも90°大きくなるように、第3の導波路43aの幅(W4)を第4の導波路43bの幅(W5)より大きくしても構わない。このような場合には、上述した実施の形態の例の平衡−不平衡変換器に対して、第1の導波路41aと第2の導波路41bとの関係が逆になる。例えば、第2の導波路41bに高周波信号を入力すると一対の線路導体51a,51bから平衡信号(差動信号)を出力することができる。   For example, in the example of the embodiment described above, the width (W4) of the third waveguide 43a is made smaller than the width (W5) of the fourth waveguide 43b, and the third waveguide 43a is changed to the TE10 mode. In this example, the phase shift amount of the high-frequency signal passing through is set 90 ° smaller than the phase shift amount of the high-frequency signal passing through the fourth waveguide 43b in the TE10 mode. However, the present invention is not limited to this. . The third phase is set so that the phase shift amount of the high-frequency signal passing through the third waveguide 43a in the TE10 mode is 90 ° larger than the phase shift amount of the high-frequency signal passing through the fourth waveguide 43b in the TE10 mode. The width (W4) of the waveguide 43a may be larger than the width (W5) of the fourth waveguide 43b. In such a case, the relationship between the first waveguide 41a and the second waveguide 41b is reversed with respect to the balanced-unbalanced converter of the example of the embodiment described above. For example, when a high frequency signal is input to the second waveguide 41b, a balanced signal (differential signal) can be output from the pair of line conductors 51a and 51b.

また、前述した実施の形態の例においては、一対の線路導体51a,51bが下側導体層31に接続された例を示したが、一対の線路導体51a,51bが上側導体層(図示せず)に接続されるようにしても構わない。   In the above-described embodiment, the pair of line conductors 51a and 51b is connected to the lower conductor layer 31, but the pair of line conductors 51a and 51b is connected to the upper conductor layer (not shown). ) May be connected.

さらに、上述した実施の形態の例においては、導波管型線路部40の誘電体基板(図示せず)の上面に配置された上側導体層(図示せず)が平衡線路部50まで延長された例を示したが、平衡線路部50における誘電体基板(図示せず)の上面に別の接地導体を配置しても構わない。また、場合によっては接地導体を配置しなくても構わない。   Furthermore, in the example of the embodiment described above, the upper conductor layer (not shown) disposed on the upper surface of the dielectric substrate (not shown) of the waveguide type line portion 40 is extended to the balanced line portion 50. However, another ground conductor may be disposed on the upper surface of the dielectric substrate (not shown) in the balanced line portion 50. In some cases, the ground conductor may not be disposed.

またさらに、上述した実施の形態の例においては、導波路の形状の差異によって導波路の移相量の差異を生じさせた例を示したが、これに限定されるものではない。例えば、導波路内の誘電率の差異によって導波路の移相量の差異を生じさせるようにしても構わない。   Furthermore, in the example of the above-described embodiment, the example in which the difference in the amount of phase shift of the waveguide is caused by the difference in the shape of the waveguide is shown, but the present invention is not limited to this. For example, a difference in the amount of phase shift of the waveguide may be caused by a difference in dielectric constant in the waveguide.

次に、本発明の平衡−不平衡変換器の具体例について説明する。   Next, a specific example of the balanced-unbalanced converter of the present invention will be described.

図1および図2に示した平衡−不平衡変換器の電気特性をシミュレーションした。シミュレーションにおいて、誘電体基板は、比誘電率を9.4とし、厚みを0.15mmとした。側壁用貫通導体群33a,33bおよび第1,第2の分離壁用貫通導体群35a,35bは直径0.1mmのビアホールとした。側壁用貫通導体群33a,33bおよび第1,第2の分離壁用貫通導体群35a,35bのそれぞれの貫通導体の配列ピッチは、隣接する貫通導体の中心同士の間隔で0.3mmとした。第1および第2の導波路41a,41bの幅(W1,W2)はどちらも1.05mmとし、第2部分42の幅(W3)は1.61mmとし、第3の導波路43aの幅(W4)は0.75mmとし、第4の導波路43bの幅(W5)は1.05mmとし、第4部分44の幅(W6)は1.68mmとした。第1および第2の導波路41a,41bの長さ(L1)は1.04mmとし、第2部分42の長さ(L2)は1.31mmとし、第3および第4の導波路43a,43bの長さ(L3)は1.54mmとし、第4部分44の長さ(L4)は2.3mmとした。   The electrical characteristics of the balanced-unbalanced converter shown in FIGS. 1 and 2 were simulated. In the simulation, the dielectric substrate had a relative dielectric constant of 9.4 and a thickness of 0.15 mm. The side wall through conductor groups 33a and 33b and the first and second separation wall through conductor groups 35a and 35b were via holes having a diameter of 0.1 mm. The arrangement pitch of the through conductors of the side wall through conductor groups 33a and 33b and the first and second separation wall through conductor groups 35a and 35b was set to 0.3 mm at the interval between the centers of the adjacent through conductors. The widths (W1, W2) of the first and second waveguides 41a, 41b are both 1.05 mm, the width (W3) of the second portion 42 is 1.61 mm, and the width (W4) of the third waveguide 43a. Was 0.75 mm, the width (W5) of the fourth waveguide 43b was 1.05 mm, and the width (W6) of the fourth portion 44 was 1.68 mm. The length (L1) of the first and second waveguides 41a and 41b is 1.04 mm, the length (L2) of the second portion 42 is 1.31 mm, and the length of the third and fourth waveguides 43a and 43b. The length (L3) was 1.54 mm, and the length (L4) of the fourth portion 44 was 2.3 mm.

そして、一対の線路導体51a,51bの外側端部をポート1,第2の導波路41bの外側端部をポート2,第1の導波路41aの外側端部をポート3として、ポート間の通過特性をシミュレーションした。   Then, the outer ends of the pair of line conductors 51a and 51b are port 1, the outer end of the second waveguide 41b is port 2, the outer end of the first waveguide 41a is port 3, and the passage between the ports is performed. The characteristics were simulated.

まず、ポート1に差動信号を入力したときのポート2への通過特性(S21)およびポート3への通過特性(S31)を求めた。図3はその結果を示すグラフであり、横軸は周波数を表し、縦軸は振幅を表している。図3に示すグラフによれば、ポート1(一対の線路導体51a,51b)に平衡信号(差動信号)を入力した場合には、第1の導波路41aを介してポート3から高周波信号が良好に出力されるものの、第2の導波路41bに接続されたポート2からは高周波信号が殆ど出力されないことがわかる。また、この結果より、外部より第1の導波路41aに高周波信号を入力した場合には、一対の線路導体51a,51bから平衡信号が出力されることがわかる。   First, the passage characteristic to port 2 (S21) and the passage characteristic to port 3 (S31) when a differential signal was input to port 1 were obtained. FIG. 3 is a graph showing the results, in which the horizontal axis represents frequency and the vertical axis represents amplitude. According to the graph shown in FIG. 3, when a balanced signal (differential signal) is input to the port 1 (the pair of line conductors 51a and 51b), a high-frequency signal is output from the port 3 via the first waveguide 41a. Although it is output satisfactorily, it can be seen that almost no high-frequency signal is output from the port 2 connected to the second waveguide 41b. Further, it can be seen from this result that when a high frequency signal is input from the outside to the first waveguide 41a, a balanced signal is output from the pair of line conductors 51a and 51b.

次に、ポート1に同相信号を入力したときのポート2への通過特性(S21)およびポート3への通過特性(S31)を求めた。図4はその結果を示すグラフであり、横軸は周波数を表し、縦軸は振幅を表している。図4に示すグラフによれば、ポート1(一対の線路導体51a,51b)に同相信号を入力した場合には、第2の導波路41bを介してポート2から高周波信号が良好に出力されるものの、第1の導波路41aに接続されたポート3からは高周波信号が殆ど出力されないことがわかる。また、この結果より、外部より第2の導波路41bに高周波信号を入力した場合には、一対の線路導体51a,51bから同相信号が出力されることがわかる。   Next, the passage characteristic to port 2 (S21) and the passage characteristic to port 3 (S31) when an in-phase signal was input to port 1 were obtained. FIG. 4 is a graph showing the results, in which the horizontal axis represents frequency and the vertical axis represents amplitude. According to the graph shown in FIG. 4, when an in-phase signal is input to port 1 (a pair of line conductors 51a and 51b), a high-frequency signal is satisfactorily output from port 2 via the second waveguide 41b. However, it can be seen that almost no high-frequency signal is output from the port 3 connected to the first waveguide 41a. Further, it can be seen from this result that when a high-frequency signal is input from the outside to the second waveguide 41b, an in-phase signal is output from the pair of line conductors 51a and 51b.

これらの結果より、外部から第1の導波路41aに高周波信号が入力されると、一対の線路導体51a,51bから平衡信号(差動信号)が出力されることが確認できた。また、外部から第2の導波路41bに高周波信号が入力されると、一対の線路導体51a,51bから同相信号が出力されることが確認できた。さらに、一対の線路導体51a,51bに入力する一対の高周波信号同士の位相関係を変化させることによって、第1の導波路41aおよび第2の導波路41bから出力される高周波信号の強度を変化させることができることが確認できた。これにより、本発明の有効性が確認できた。   From these results, it was confirmed that when a high-frequency signal was input from the outside to the first waveguide 41a, a balanced signal (differential signal) was output from the pair of line conductors 51a and 51b. Further, it was confirmed that when a high frequency signal was input from the outside to the second waveguide 41b, an in-phase signal was output from the pair of line conductors 51a and 51b. Further, the intensity of the high-frequency signal output from the first waveguide 41a and the second waveguide 41b is changed by changing the phase relationship between the pair of high-frequency signals input to the pair of line conductors 51a and 51b. It was confirmed that it was possible. Thereby, the effectiveness of the present invention was confirmed.

31:下側導体層
33a,33b:側壁用貫通導体群
35a:第1の分離壁用貫通導体群
35b:第2の分離壁用貫通導体群
40:導波管型線路部
41:第1部分
42:第2部分
43:第3部分
44:第4部分
41a:第1の導波路
41b:第2の導波路
43a:第3の導波路
43b:第4の導波路
50:平衡線路部
51a,51b:線路導体
31: Lower conductor layer
33a, 33b: Side wall through conductor group
35a: First through wall through conductor group
35b: Second through wall through conductor group
40: Waveguide type line section
41: 1st part
42: Second part
43: Third part
44: Fourth part
41a: first waveguide
41b: second waveguide
43a: third waveguide
43b: Fourth waveguide
50: balanced line section
51a, 51b: Line conductor

Claims (2)

誘電体基板,該誘電体基板の下面に配置された下側導体層,前記誘電体基板の上面に配置された上側導体層および高周波信号の伝播方向に前記高周波信号の波長の1/2未満の繰り返し間隔で前記上側導体層および前記下側導体層を電気的に接続するように配置された2列の側壁用貫通導体群を備え、前記上側導体層,前記下側導体層および前記2列の側壁用貫通導体群で囲まれた導波領域によって前記高周波信号が伝送される導波管型線路部と、前記誘電体基板の下面または上面に平衡信号が伝送可能な一対の線路導体が間隔をあけて配置された平衡線路部とを備え、
前記導波管型線路部は、
前記2列の側壁用貫通導体群の間に前記高周波信号の伝播方向に沿って前記高周波信号の波長の1/2未満の繰り返し間隔で前記上側導体層および前記下側導体層を電気的に接続するように配置された第1の分離壁用貫通導体群によって、前記高周波信号がTE10モードで伝播可能な第1および第2の導波路に前記導波領域が分割された第1部分と、
該第1部分に接続された、前記導波領域全体で前記高周波信号がTE10モードおよびTE20モードで伝播可能な1つの導波路が構成された第2部分と、
該第2部分に接続された、前記2列の側壁用貫通導体群の間に前記高周波信号の伝播方向に沿って前記高周波信号の波長の1/2未満の繰り返し間隔で前記上側導体層および前記下側導体層を電気的に接続するように配置された第2の分離壁用貫通導体群によって、前記高周波信号がTE10モードで伝播可能な第3および第4の導波路に前記導波領域が分割された第3部分と、
該第3部分に接続された、前記導波領域全体で前記高周波信号がTE10モードおよびTE20モードで伝播可能な1つの導波路が構成された第4部分とで構成されており、
前記第2部分は、TE10モードで通過する前記高周波信号の移相量とTE20モードで通過する前記高周波信号の移相量との差が90°に設定されており、
前記第3および第4の導波路は、それぞれをTE10モードで通過する前記高周波信号の移相量の差が90°に設定されており、
前記第4部分の前記第3部分に接続された側と反対側の端部において、前記誘電体基板の前記一対の線路導体が配置された面に位置する前記下側導体層または前記上側導体層に前記一対の線路導体が接続されて、前記導波管型線路部と前記平衡線路部とが接続されていることを特徴とする平衡−不平衡変換器。
A dielectric substrate, a lower conductor layer disposed on the lower surface of the dielectric substrate, an upper conductor layer disposed on the upper surface of the dielectric substrate, and less than half of the wavelength of the high-frequency signal in the propagation direction of the high-frequency signal 2 side wall through conductor groups arranged to electrically connect the upper conductor layer and the lower conductor layer at repeated intervals, the upper conductor layer, the lower conductor layer, and the two rows A waveguide-type line section in which the high-frequency signal is transmitted by a waveguide region surrounded by a through-hole conductor group for side walls and a pair of line conductors capable of transmitting a balanced signal on the lower surface or the upper surface of the dielectric substrate are spaced from each other. With a balanced line section that is open,
The waveguide line section is
The upper conductor layer and the lower conductor layer are electrically connected between the two rows of through-hole conductor groups for the sidewalls along the propagation direction of the high-frequency signal at a repetition interval of less than half of the wavelength of the high-frequency signal. A first portion in which the waveguide region is divided into first and second waveguides through which the high-frequency signal can propagate in a TE10 mode by a first through-wall group for separation walls arranged so as to
A second portion that is connected to the first portion and is configured to have a single waveguide capable of propagating the high-frequency signal in the TE10 mode and the TE20 mode throughout the waveguide region;
Between the two rows of through-wall conductor groups connected to the second portion, the upper conductor layer and the upper conductor layer at a repetitive interval of less than half of the wavelength of the high-frequency signal along the propagation direction of the high-frequency signal The waveguide region is formed in the third and fourth waveguides through which the high-frequency signal can propagate in the TE10 mode by the second through-wall group of separation walls arranged so as to electrically connect the lower conductor layers. A third part divided;
A fourth portion configured by one waveguide connected to the third portion and capable of propagating the high-frequency signal in the TE10 mode and the TE20 mode in the entire waveguide region;
In the second portion, the difference between the phase shift amount of the high frequency signal passing in the TE10 mode and the phase shift amount of the high frequency signal passing in the TE20 mode is set to 90 °,
In the third and fourth waveguides, the difference in phase shift amount of the high-frequency signal passing through each in the TE10 mode is set to 90 °,
The lower conductor layer or the upper conductor layer located on the surface of the dielectric substrate opposite to the side connected to the third portion of the fourth portion, on the surface on which the pair of line conductors are disposed. The balanced-unbalanced converter is characterized in that the pair of line conductors are connected to each other, and the waveguide line section and the balanced line section are connected.
前記第1および第2の導波路は、前記側壁用貫通導体群と前記第1の分離壁用貫通導体群との間隔が互いに等しく設定されており、
前記第2部分は、TE10モードで通過する前記高周波信号の移相量とTE20モードで通過する前記高周波信号の移相量との差が90°になるように、前記高周波信号の伝播方向の長さおよび前記2つの側壁用貫通導体群の間隔が設定されており、
前記第3および第4の導波路は、前記側壁用貫通導体群と前記第2の分離壁用貫通導体群との間隔が互いに異なっているとともに、それぞれをTE10モードで通過する前記高周波信号の移相量の差が90°になるように、前記高周波信号の伝播方向の長さおよびそれぞれの前記側壁用貫通導体群と前記第2の分離壁用貫通導体群との間隔が設定されていることを特徴とする請求項1に記載の平衡−不平衡変換器。
In the first and second waveguides, the interval between the side wall through conductor group and the first separation wall through conductor group is set to be equal to each other,
The second portion has a length in the propagation direction of the high-frequency signal so that a difference between a phase shift amount of the high-frequency signal passing in the TE10 mode and a phase shift amount of the high-frequency signal passing in the TE20 mode is 90 °. And the interval between the two side wall through conductor groups is set,
In the third and fourth waveguides, the interval between the side wall through conductor group and the second separation wall through conductor group is different from each other, and the transfer of the high-frequency signal passing through each in the TE10 mode is different. The length in the propagation direction of the high-frequency signal and the distance between each of the side wall through conductor groups and the second separation wall through conductor group are set so that the phase amount difference is 90 °. The balanced-unbalanced converter according to claim 1.
JP2009292037A 2009-12-24 2009-12-24 Balance-unbalance converter Expired - Fee Related JP5404375B2 (en)

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