JP5428066B2 - Nanocarbon material manufacturing apparatus and manufacturing method thereof - Google Patents
Nanocarbon material manufacturing apparatus and manufacturing method thereof Download PDFInfo
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- JP5428066B2 JP5428066B2 JP2011541960A JP2011541960A JP5428066B2 JP 5428066 B2 JP5428066 B2 JP 5428066B2 JP 2011541960 A JP2011541960 A JP 2011541960A JP 2011541960 A JP2011541960 A JP 2011541960A JP 5428066 B2 JP5428066 B2 JP 5428066B2
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- Prior art keywords
- organic liquid
- tank body
- catalyst
- tank
- gas
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- 239000000463 material Substances 0.000 title claims description 88
- 229910021392 nanocarbon Inorganic materials 0.000 title claims description 76
- 238000004519 manufacturing process Methods 0.000 title claims description 43
- 239000007788 liquid Substances 0.000 claims description 223
- 239000000758 substrate Substances 0.000 claims description 116
- 239000003054 catalyst Substances 0.000 claims description 107
- 238000006243 chemical reaction Methods 0.000 claims description 105
- 239000007789 gas Substances 0.000 claims description 100
- 239000011261 inert gas Substances 0.000 claims description 79
- 238000003786 synthesis reaction Methods 0.000 claims description 69
- 230000015572 biosynthetic process Effects 0.000 claims description 63
- 238000010438 heat treatment Methods 0.000 claims description 46
- 238000001704 evaporation Methods 0.000 claims description 30
- 238000004891 communication Methods 0.000 claims description 13
- 230000002194 synthesizing effect Effects 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 81
- 229910052799 carbon Inorganic materials 0.000 description 49
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 41
- 239000002041 carbon nanotube Substances 0.000 description 30
- 229910021393 carbon nanotube Inorganic materials 0.000 description 29
- 238000000034 method Methods 0.000 description 24
- 239000002184 metal Substances 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 18
- 238000001816 cooling Methods 0.000 description 15
- 230000008020 evaporation Effects 0.000 description 13
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229910021536 Zeolite Inorganic materials 0.000 description 10
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 10
- 239000010457 zeolite Substances 0.000 description 10
- 125000004432 carbon atom Chemical group C* 0.000 description 9
- 239000002109 single walled nanotube Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 238000010992 reflux Methods 0.000 description 8
- 239000012159 carrier gas Substances 0.000 description 7
- 229910001873 dinitrogen Inorganic materials 0.000 description 7
- 239000012535 impurity Substances 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 238000005229 chemical vapour deposition Methods 0.000 description 6
- 239000002079 double walled nanotube Substances 0.000 description 6
- 238000002474 experimental method Methods 0.000 description 6
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 239000012808 vapor phase Substances 0.000 description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 5
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- 238000003780 insertion Methods 0.000 description 5
- 230000037431 insertion Effects 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
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- 229920006395 saturated elastomer Polymers 0.000 description 5
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
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- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910003481 amorphous carbon Inorganic materials 0.000 description 3
- 238000001241 arc-discharge method Methods 0.000 description 3
- BTANRVKWQNVYAZ-UHFFFAOYSA-N butan-2-ol Chemical compound CCC(C)O BTANRVKWQNVYAZ-UHFFFAOYSA-N 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 239000000470 constituent Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 238000003618 dip coating Methods 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
- 150000002430 hydrocarbons Chemical class 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
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- 239000007924 injection Substances 0.000 description 3
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- 239000010410 layer Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000002086 nanomaterial Substances 0.000 description 3
- 239000002074 nanoribbon Substances 0.000 description 3
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 150000003839 salts Chemical class 0.000 description 3
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- 239000000126 substance Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 229910052692 Dysprosium Inorganic materials 0.000 description 2
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052688 Gadolinium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 229910052777 Praseodymium Inorganic materials 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 2
- 238000001069 Raman spectroscopy Methods 0.000 description 2
- 229910052771 Terbium Inorganic materials 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 229910052786 argon Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 150000001722 carbon compounds Chemical class 0.000 description 2
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- -1 cyclic ester Chemical class 0.000 description 2
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- KTWOOEGAPBSYNW-UHFFFAOYSA-N ferrocene Chemical compound [Fe+2].C=1C=C[CH-]C=1.C=1C=C[CH-]C=1 KTWOOEGAPBSYNW-UHFFFAOYSA-N 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 229910021389 graphene Inorganic materials 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- 150000002576 ketones Chemical class 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- 229910052744 lithium Inorganic materials 0.000 description 2
- 150000002737 metalloid compounds Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- HZVOZRGWRWCICA-UHFFFAOYSA-N methanediyl Chemical compound [CH2] HZVOZRGWRWCICA-UHFFFAOYSA-N 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 150000007524 organic acids Chemical class 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000011232 storage material Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 1
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- ZAFNJMIOTHYJRJ-UHFFFAOYSA-N Diisopropyl ether Chemical compound CC(C)OC(C)C ZAFNJMIOTHYJRJ-UHFFFAOYSA-N 0.000 description 1
- GWESVXSMPKAFAS-UHFFFAOYSA-N Isopropylcyclohexane Natural products CC(C)C1CCCCC1 GWESVXSMPKAFAS-UHFFFAOYSA-N 0.000 description 1
- JGFBQFKZKSSODQ-UHFFFAOYSA-N Isothiocyanatocyclopropane Chemical compound S=C=NC1CC1 JGFBQFKZKSSODQ-UHFFFAOYSA-N 0.000 description 1
- 239000005642 Oleic acid Substances 0.000 description 1
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 235000011054 acetic acid Nutrition 0.000 description 1
- KXKVLQRXCPHEJC-UHFFFAOYSA-N acetic acid trimethyl ester Natural products COC(C)=O KXKVLQRXCPHEJC-UHFFFAOYSA-N 0.000 description 1
- GOKIPOOTKLLKDI-UHFFFAOYSA-N acetic acid;iron Chemical compound [Fe].CC(O)=O.CC(O)=O.CC(O)=O GOKIPOOTKLLKDI-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- PWLNAUNEAKQYLH-UHFFFAOYSA-N butyric acid octyl ester Natural products CCCCCCCCOC(=O)CCC PWLNAUNEAKQYLH-UHFFFAOYSA-N 0.000 description 1
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
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- 229940011182 cobalt acetate Drugs 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- QAHREYKOYSIQPH-UHFFFAOYSA-L cobalt(II) acetate Chemical compound [Co+2].CC([O-])=O.CC([O-])=O QAHREYKOYSIQPH-UHFFFAOYSA-L 0.000 description 1
- 239000000805 composite resin Substances 0.000 description 1
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- 239000012809 cooling fluid Substances 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
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- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000011549 displacement method Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- WBJINCZRORDGAQ-UHFFFAOYSA-N formic acid ethyl ester Natural products CCOC=O WBJINCZRORDGAQ-UHFFFAOYSA-N 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000010574 gas phase reaction Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000001727 in vivo Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 1
- 238000001182 laser chemical vapour deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000002048 multi walled nanotube Substances 0.000 description 1
- UUIQMZJEGPQKFD-UHFFFAOYSA-N n-butyric acid methyl ester Natural products CCCC(=O)OC UUIQMZJEGPQKFD-UHFFFAOYSA-N 0.000 description 1
- 239000002088 nanocapsule Substances 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 229910052754 neon Inorganic materials 0.000 description 1
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 1
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 1
- 235000021313 oleic acid Nutrition 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 235000019260 propionic acid Nutrition 0.000 description 1
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000029058 respiratory gaseous exchange Effects 0.000 description 1
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- 239000007787 solid Substances 0.000 description 1
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- 150000005846 sugar alcohols Polymers 0.000 description 1
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- 238000001771 vacuum deposition Methods 0.000 description 1
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B32/00—Carbon; Compounds thereof
- C01B32/15—Nano-sized carbon materials
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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Description
本発明は、ナノカーボン材料の製造装置及び製造方法に係り、特に良質のナノカーボン材料を量産することができるナノカーボン材料の製造装置及びその製造方法に関する。 The present invention relates to a nanocarbon material manufacturing apparatus and manufacturing method, and more particularly to a nanocarbon material manufacturing apparatus and a manufacturing method thereof capable of mass-producing high-quality nanocarbon materials.
特異の電子物性、吸着特性、機械的特性により例えば、走査型プローブ顕微鏡(SPM)探針、電界放出ディスプレイ(FED)用エミッタ、燃料電池用水素吸蔵材料、リチウム二次電池負極材料、高密度集積回路、高性能樹脂複合材料など、極めて広範囲の応用が期待されるカーボンナノチューブの開発、研究が進められており、特に、近時は高品質のカーボンナノチューブを安定して量産できる方法が模索されている。カーボンナノチューブ(Carbon Nano Tube:CNT)は、グラファイトの層を丸めた円筒状構造で生成される炭素微結晶であり、その製造方法として従来、アーク放電法、レーザ蒸発法、化学気相成長法(CVD)などが知られている。アーク放電法は例えば対向した炭素電極間に高電圧をかけ真空下でアーク放電を行なうことにより、陰極側にカーボンナノチューブを生成し堆積させるものであり、レーザ蒸発法は、加熱雰囲気下で触媒を混合した炭素にレーザ光を当てて炭素と触媒を気化反応させてカーボンナノチューブを生成させるものであり、化学的気相成長法(CVD)は、加熱高温雰囲気内にキャリアガスとともに炭化水素ガスを導入し、金属触媒上にカーボンナノチューブを成長させるものである。アーク放電法では欠陥が少なく品質の良いCNTが得られるが、工業的に利用可能な量を得るのは困難である。また、レーザ蒸発法は比較的高い純度の単層CNTを得る事ができ、また条件変更によりチューブ径の制御が可能であるが、収量が少なく、これについても工業的に量産するのは困難である。さらに、化学気相成長法(Chemical Vapor Deposition:CVD法)は、炭素源となる炭素化合物を原料ガスとして供給出来るために大量合成に向くが、合成されたCNTは一般に結晶性が劣るとされている。一方、カーボンナノチューブの製造方法について、従来、特許文献1,2並びに非特許文献1の方法がさらに提案されている。 For example, scanning probe microscope (SPM) probe, emitter for field emission display (FED), hydrogen storage material for fuel cell, negative electrode material for lithium secondary battery, high density integration Carbon nanotubes, which are expected to be used in a wide range of applications, such as circuits and high-performance resin composites, are being developed and researched.In particular, recently, a method for stable mass production of high-quality carbon nanotubes has been sought. Yes. Carbon nanotubes (CNTs) are carbon microcrystals produced in a cylindrical structure with a rounded graphite layer. Conventionally, as a manufacturing method thereof, an arc discharge method, a laser evaporation method, a chemical vapor deposition method ( CVD) and the like are known. In the arc discharge method, for example, a high voltage is applied between opposed carbon electrodes and arc discharge is performed under vacuum to generate and deposit carbon nanotubes on the cathode side. In the laser evaporation method, a catalyst is formed in a heated atmosphere. Laser light is applied to the mixed carbon to cause carbon and catalyst to vaporize and produce carbon nanotubes. Chemical vapor deposition (CVD) introduces a hydrocarbon gas together with a carrier gas into a heated high-temperature atmosphere. The carbon nanotubes are grown on the metal catalyst. The arc discharge method can produce CNTs with few defects and good quality, but it is difficult to obtain industrially usable quantities. In addition, the laser evaporation method can obtain single-walled CNTs with relatively high purity, and the tube diameter can be controlled by changing the conditions, but the yield is small and it is difficult to mass-produce this industrially. is there. Furthermore, the chemical vapor deposition (CVD) method is suitable for mass synthesis because a carbon compound as a carbon source can be supplied as a raw material gas, but the synthesized CNTs are generally considered to have poor crystallinity. Yes. On the other hand, the methods of Patent Documents 1 and 2 and Non-Patent Document 1 have been further proposed as methods for producing carbon nanotubes.
特許文献1及び非特許文献1は、基板上に金属触媒を堆積し、該基板を有機液体中で加熱してCNTを合成する方法である。しかしながら、これらの文献の方法では有機液体中に基板を浸漬して金属触媒を有機液体に直接に接触させた状態でCNTを合成させる(液中基板加熱法)ので基板がCNTの最適合成温度に到達する前に基板上の触媒が有機液体と反応してしまうため、安定して純度の高いカーボンナノチューブを得ることができなかった。また、触媒に関しては、有機液体に溶出する触媒材料はカーボンナノチューブ合成時に基板から剥離してしまうため、用いることができない。したがって、有機液体に溶出しにくい例えば鉄、コバルト、鉄系合金等を触媒として選択しなければならなかった。さらに、基板への触媒膜の付着力を高めるために、基板上にスパッタ法や真空蒸着法などでFe薄膜を堆積し、さらにFe薄膜を堆積した基板を水素プラズマ処理することによりFeを島状に微粒子とするとともに、基板に強固に結合させる必要があり、高価なスパッタ装置やプラズマ処理装置を必要とし、設備コスト、製造コストが高価となる問題があった。また、特許文献2は、触媒18を配置した石英管11を加熱炉12内に配置し、同じ石英管の端部寄りにエタノールを収容した容器16を配置し、エタノールの蒸発ガスを石英管の一端側から流すキャリアガスで触媒側に流動させてCNTを合成するものである。この装置では、加熱炉内に配置させる一方向に長い大型の石英管容器が必要であり、したがって、石英管容器及びその中の炭素源ガス全体を高温までに加熱する必要があることから、合成プロセスが複雑で加熱、冷却を含めたプロセス時間が長い。また、設備コストが高い上に、具体的な製造時の触媒や有機液体の着脱操作が煩雑で手間がかかり作業性が劣る問題があった。 Patent Document 1 and Non-Patent Document 1 are methods of synthesizing CNTs by depositing a metal catalyst on a substrate and heating the substrate in an organic liquid. However, in these methods, the substrate is immersed in an organic liquid and CNT is synthesized in a state where the metal catalyst is in direct contact with the organic liquid (submerged substrate heating method). Since the catalyst on the substrate reacts with the organic liquid before reaching, carbon nanotubes with high purity could not be obtained stably. As for the catalyst, the catalyst material eluted in the organic liquid cannot be used because it is peeled off from the substrate when the carbon nanotube is synthesized. Therefore, it has been necessary to select, for example, iron, cobalt, iron-based alloy, etc., which are difficult to elute into an organic liquid, as a catalyst. Further, in order to increase the adhesion of the catalyst film to the substrate, an Fe thin film is deposited on the substrate by sputtering or vacuum evaporation, and the Fe thin film is deposited on the substrate by hydrogen plasma treatment to form Fe into islands. In addition, there is a problem that it is necessary to form fine particles and firmly bond to the substrate, and an expensive sputtering apparatus or plasma processing apparatus is required, resulting in high equipment costs and manufacturing costs. Further, in Patent Document 2, a quartz tube 11 in which a catalyst 18 is disposed is disposed in a heating furnace 12, a container 16 containing ethanol is disposed near the end of the same quartz tube, and an ethanol evaporating gas is disposed in the quartz tube. The CNT is synthesized by flowing to the catalyst side with a carrier gas flowing from one end side. This apparatus requires a large quartz tube container that is long in one direction to be placed in a heating furnace. Therefore, it is necessary to heat the quartz tube container and the entire carbon source gas therein to a high temperature. The process is complicated and the process time including heating and cooling is long. In addition, the equipment cost is high, and there is a problem that the attaching and detaching operation of the catalyst and the organic liquid at the time of concrete production is complicated and troublesome and the workability is inferior.
本発明は上記従来の課題に鑑みてなされたものであり、その一つの目的は、極めて簡単な構成で、金属触媒の選択の自由度が高く、基板への担持方法が簡単であり、合成時には高濃度の炭素源ガスのみを触媒に接触して良好な品質のナノカーボン材料を量産することのできるナノカーボン材料の製造装置並びにナノカーボン材料の製造方法を提供することにある。 The present invention has been made in view of the above-described conventional problems, and one object thereof is an extremely simple configuration, a high degree of freedom in selecting a metal catalyst, a simple method for supporting the substrate, and at the time of synthesis. An object of the present invention is to provide a nanocarbon material production apparatus and a nanocarbon material production method capable of mass-producing a good quality nanocarbon material by contacting only a high concentration carbon source gas with a catalyst.
上記課題を解決するために本発明は、閉鎖空間2aを内部に形成し有機液体6との連通部9を有する槽体2,200と、閉鎖空間2a内に配置した触媒担持基板4であって、担持した触媒3を槽体2の閉鎖空間2aに曝し、かつ触媒3を有機液体6に直接に接触させない位置に配置した触媒担持基板4と、触媒担持基板4の加熱装置5と、槽体2の連通部9において槽体2,200の閉鎖空間2aと接するように配置された有機液体6と、触媒担持基板4の加熱による有機液体6の蒸発時にその蒸発ガスVGと置換される不活性ガスIGであり、槽体2,200の閉鎖空間2aに該不活性ガスIGを供給する不活性ガス供給装置7と、を有し、槽体2,200の閉鎖空間2aが反応空間とされ、槽体2,200の槽璧21a〜21d、201a〜201dで囲まれた面F全体が反応空間と有機液体6との境界部8となるように有機液体6と槽体2,200との連通部9が形成されていることを特徴とするナノカーボン材料の製造装置1、30から構成される。 In order to solve the above-mentioned problems, the present invention includes a tank body 2,200 having a closed space 2a formed therein and a communicating portion 9 with the organic liquid 6, and a catalyst-carrying substrate 4 disposed in the closed space 2a. The catalyst-carrying substrate 4 is disposed in a position where the supported catalyst 3 is exposed to the closed space 2a of the tank body 2 and the catalyst 3 is not in direct contact with the organic liquid 6, the heating device 5 for the catalyst-carrying substrate 4, and the tank body The organic liquid 6 disposed so as to be in contact with the closed space 2a of the tank body 2 and 200 in the communicating portion 9 of the tank 2 and the inert gas substituted with the evaporated gas VG when the organic liquid 6 is evaporated by heating the catalyst supporting substrate 4 An inert gas supply device 7 that is a gas IG and supplies the inert gas IG to the closed space 2a of the tank body 2,200, and the closed space 2a of the tank body 2,200 is a reaction space, Tanks 21a-21d, 201 of tank body 2,200 The communication part 9 between the organic liquid 6 and the tank body 2 and 200 is formed so that the entire surface F surrounded by ˜201d becomes the boundary part 8 between the reaction space and the organic liquid 6. It comprises carbon material manufacturing apparatuses 1 and 30.
その際、ナノカーボン材料の製造装置30の槽体200は有機液体を収容し槽体全体をその有機液体中に浸漬させ得る液槽を有し、槽体は下面開口を連通部とする反転ケース体からなり、有機液体中に浸漬された状態で内部を閉鎖空間とし、支持機構を介して液槽内の有機液体に対して浸漬、引き揚げ可能に設けられ、さらに、槽体は、同槽体を液槽内の有機液体へ浸漬操作するとき、又は触媒担持基板を合成温度に向けて加熱昇温するとき、を含む非合成時には槽体内に不活性ガスを供給して閉鎖空間を不活性ガスによる高濃度状態とする態様と、有機液体中での触媒担持基板の加熱によるナノカーボン材料の合成中には不活性ガスの供給を停止し有機液体の蒸発ガスで置換して閉鎖空間内を有機液体の蒸発ガスによる高濃度状態とする態様と、を有する構成とするとよい。 In that case, the tank body 200 of the nanocarbon material manufacturing apparatus 30 has a liquid tank that can store an organic liquid and immerse the entire tank body in the organic liquid, and the tank body has an inversion case having a lower surface opening as a communicating portion. The body is a closed space in the state of being immersed in an organic liquid, and is provided so as to be immersed in and withdrawn from the organic liquid in the liquid tank via a support mechanism. When the substrate is immersed in an organic liquid in the liquid tank, or when the temperature of the catalyst-supporting substrate is heated to the synthesis temperature, the inert gas is supplied into the tank during non-synthesis, including the inert gas in the closed space. During the synthesis of the nanocarbon material by heating the catalyst-supporting substrate in organic liquid, the supply of inert gas is stopped and replaced with evaporative gas of organic liquid, and the enclosed space is organic High concentration by liquid evaporation gas When, it may be configured to have.
また、槽体2,200の閉鎖空間2aに面する有機液体6の液面F外縁サイズが槽体2,200の内法サイズ(x1、x2、y1、y2)と略同一とするとよい。 Moreover, the liquid surface F outer edge size of the organic liquid 6 facing the closed space 2a of the tank body 2,200 may be substantially the same as the inner size (x1, x2, y1, y2) of the tank body 2,200.
また、本発明は、槽体2,200の槽壁21a〜21d、201a〜201dで囲まれた面F全体が有機液体6と反応空間との境界8をなすように槽体2,200内の反応空間に面して有機液体6を配置し、触媒3を有機液体6に直接に接触させない位置で、かつ触媒3を槽体2,200の反応空間に曝した状態で触媒担持基板4を配置し、触媒担持基板4が合成温度に加熱されるとき以外は、反応空間内に不活性ガスIGを供給し、触媒担持基板4が合成温度に加熱された場合に有機液体6の蒸発ガスVGと置換して槽体2,200の槽璧21a〜21d、201a〜201dで囲まれた面F全体で有機液体蒸発ガスVGを供給しつつ触媒3上にカーボンナノ材料Nを合成することを特徴とするナノカーボン材料の製造方法から構成される。 In addition, the present invention provides the inside of the tank body 2, 200 so that the entire surface F surrounded by the tank walls 21 a to 21 d and 201 a to 201 d of the tank body 2 200 forms the boundary 8 between the organic liquid 6 and the reaction space. The organic liquid 6 is disposed facing the reaction space, and the catalyst-supporting substrate 4 is disposed in a position where the catalyst 3 is not in direct contact with the organic liquid 6 and the catalyst 3 is exposed to the reaction space of the tank body 2,200. Then, except when the catalyst-carrying substrate 4 is heated to the synthesis temperature, an inert gas IG is supplied into the reaction space, and when the catalyst-carrying substrate 4 is heated to the synthesis temperature, the evaporation gas VG of the organic liquid 6 The carbon nanomaterial N is synthesized on the catalyst 3 while supplying the organic liquid evaporating gas VG over the entire surface F surrounded by the tank walls 21a to 21d and 201a to 201d of the tank body 2,200. Constructed from manufacturing method of nanocarbon material
その際、また、下面を開口200Aした槽体200内を反応空間とし該反応空間に不活性ガスIGを充填した状態で有機液体6を収容した液槽31内に槽体200を浸漬し、その状態でナノカーボン材料を合成することとしてもよい。 At that time, the tank body 200 is immersed in the liquid tank 31 containing the organic liquid 6 in a state where the inside of the tank body 200 having the opening 200A on the lower surface is used as a reaction space and the reaction space is filled with the inert gas IG, The nanocarbon material may be synthesized in the state.
本発明のナノカーボン材料の製造装置では、内部を閉じた槽体に有機液体を収容し、残部の容積空間を反応空間とし、触媒担持基板の加熱により合成条件を生成させて有機液体の蒸発ガスを炭素源ガスとして触媒上にナノカーボン材料を気相成長させるものである。そして、特に、槽体の閉鎖空間を反応空間とし、槽体の槽璧で囲まれた面全体が反応空間と有機液体との境界部となるように有機液体と槽体との連通部を形成している。したがって、槽体の槽璧で囲まれた反応空間の有機液体との接液面全体で有機液体と反応空間が連通しており、これによって、有機液体からの蒸発ガス全体が無駄なく反応空間に供給され、高濃度の炭素源ガス雰囲気を維持することができる。 In the nanocarbon material manufacturing apparatus of the present invention, an organic liquid is contained in a tank body closed inside, and the remaining volume space is used as a reaction space, and a synthesis condition is generated by heating the catalyst-carrying substrate to evaporate the organic liquid. Is used for vapor phase growth of a nanocarbon material on the catalyst. In particular, the communication space between the organic liquid and the tank body is formed so that the closed space of the tank body is a reaction space and the entire surface surrounded by the tank wall of the tank body is the boundary between the reaction space and the organic liquid. doing. Therefore, the organic liquid and the reaction space communicate with each other over the entire surface of the reaction space that is surrounded by the tank wall of the tank body and the organic liquid, thereby allowing the entire evaporated gas from the organic liquid to enter the reaction space without waste. A high-concentration carbon source gas atmosphere can be maintained.
ナノカーボン材料の製造装置としては、閉鎖容器の形状、構成材料、大きさ、触媒担持基板のケース体への装着、着脱自在構成、合成物であるナノカーボン材料の取り出し、ケース体の具体的な形状、構造、構成材料、大きさ、触媒担持した基板の組み付け・着脱自在構造などの本発明の本質的な構成要素以外の部分は任意に設定できる。 The nanocarbon material manufacturing equipment includes the shape of the closed container, the constituent materials, the size, the mounting of the catalyst support substrate on the case body, the detachable configuration, the extraction of the nanocarbon material as a composite, and the specific case body Portions other than the essential constituent elements of the present invention, such as the shape, structure, constituent material, size, and structure for assembling / detaching the catalyst-carrying substrate, can be arbitrarily set.
また、本発明は、有機液体中に槽体を浸漬させることなく、液槽内に有機液体収容部と有機液体に接する状態で反応空間としての気相空間を設け、気相空間に接するように配置した触媒を担持する基板を加熱して高温の合成温度条件下においてのみ、有機液体の蒸発ガスで触媒に気相成長させることによっても効率的にナノカーボン材料を合成することができる。 Further, the present invention provides a gas phase space as a reaction space in contact with the organic liquid container and the organic liquid in the liquid tank without immersing the tank body in the organic liquid, and is in contact with the gas phase space. The nanocarbon material can be efficiently synthesized also by heating the substrate carrying the arranged catalyst and performing vapor phase growth on the catalyst with an evaporating gas of an organic liquid only under a high synthesis temperature condition.
また、本発明のナノカーボン材料の製造方法では、触媒担持基板が合成温度に加熱されるとき以外は、反応空間内に不活性ガスを供給し、触媒担持基板が合成温度に加熱された場合に有機液体の蒸発ガスと置換して槽体の槽壁で囲まれた面全体で有機液体蒸発ガスを供給しつつ触媒上にカーボンナノ材料を合成する。槽体の槽璧で囲まれた反応空間の有機液体との接液面全体で有機液体からの蒸発ガスが無駄なく反応空間に供給され、高濃度の炭素源ガス雰囲気を維持することができる。 In the method for producing a nanocarbon material of the present invention, except that the catalyst-carrying substrate is heated to the synthesis temperature, an inert gas is supplied into the reaction space, and the catalyst-carrying substrate is heated to the synthesis temperature. The carbon nanomaterial is synthesized on the catalyst while supplying the organic liquid evaporative gas over the entire surface surrounded by the tank wall of the tank body by replacing with the organic liquid evaporative gas. Evaporated gas from the organic liquid is supplied to the reaction space without waste over the entire surface in contact with the organic liquid in the reaction space surrounded by the tank wall of the tank body, and a high concentration carbon source gas atmosphere can be maintained.
また、他の方法では、有機液体中に浸漬される槽体であって、少なくとも合成温度まで加熱され内壁の一部に触媒を担持させた槽体内に、外部から供給される不活性ガスを介して有機液体の蒸発ガスと置換可能な反応空間としての気相空間を設け、高温の合成温度時にのみ有機液体の蒸発ガスを、気相空間に飽和させる。そして、高温の合成温度条件が満たされた合成温度時間帯あるいは反応時間帯には、有機液体の蒸発ガスのみを気相空間である反応空間に存在させてナノカーボン材料を触媒に気相成長させ、高温の合成温度時以外の温度上昇あるいは降下途中では、気相空間には不活性ガスを供給し続けるようにしたものである。有機液体は炭素源であり、炭素を含む有機化合物の溶液である。ナノカーボン材料の合成温度は一般に900℃程度であり、加熱途中あるいは室温への放温途中に触媒が有機液体の蒸発ガス及び有機液体に接触しないように不活性ガスと置換させる。これによって、合成温度より低温での反応による不純物やアモルファスカーボンが生成しないようにする。 In another method, the tank is immersed in an organic liquid, and is heated to at least the synthesis temperature and has a catalyst supported on a part of the inner wall via an inert gas supplied from the outside. Thus, a vapor phase space is provided as a reaction space that can replace the vaporized organic liquid gas, and the vaporized organic liquid gas is saturated in the vapor phase space only at a high synthesis temperature. Then, in the synthesis temperature time zone or reaction time zone when the high temperature synthesis temperature condition is satisfied, only the evaporative gas of the organic liquid is present in the reaction space, which is the gas phase space, and the nanocarbon material is vapor-phase grown on the catalyst. The inert gas is continuously supplied to the gas phase space during the temperature increase or decrease except for the high synthesis temperature. The organic liquid is a carbon source and is a solution of an organic compound containing carbon. The synthesis temperature of the nanocarbon material is generally about 900 ° C., and the catalyst is replaced with an inert gas so that the catalyst does not come into contact with the evaporating gas and the organic liquid of the organic liquid during heating or during the temperature release to room temperature. This prevents impurities and amorphous carbon from being generated by a reaction at a temperature lower than the synthesis temperature.
本発明のナノカーボン材料の製造装置及びナノカーボン材料の製造方法によれば、閉鎖空間と有機液体とが接するように槽体及び有機液体を配置し、閉鎖空間に配置した触媒担持基板の加熱による有機液体の蒸発ガスを閉鎖空間により形成される反応空間に生成させ、合成温度で基板の触媒上にナノカーボン材料を気相成長させるから、(1)基板のみの加熱構成でよく、装置の小型化、低コスト化を達成できる。(2)また、真空装置等を必要としないから装置を低コストで構成させることができるとともに、真空から大気圧に戻す工程などが不要で、成長したナノカーボン材料の回収を簡単に行なうことができ、製造段階での操作性、工程管理が容易である。また、(3)炭素源ガスの高濃度雰囲気と大きな温度勾配相を簡単な構成で確実に実現し、これを閉鎖空間でできるので、基板の温度昇降変化により生成されやすい不純物を含まない高純度、高品質のナノカーボン材料を合成することができるとともに、成長効率を大幅に向上させることができる。(4)さらに、有機液体中での気相成長法による生成であるから、基板を介した加熱による有機液体の加熱温度調整を正確に行なってナノカーボン材料を精度良く生成制御可能である。(5)加えて、反応空間にはキャリアガスなどをほとんど含まないから温度や気体濃度あるいは密度等と関連する単層、複層のカーボンナノチューブ等合成の制御パラメータ設定を簡単に行なうことができる(6)。特に、槽体の閉鎖空間が反応空間とされ、槽体の槽璧で囲まれた面全体が反応空間と有機液体との境界部となるように有機液体と槽体との連通部が形成されることにより、合成反応に必要で合成反応にほぼすべてが利用可能な炭素源としての充分な有機液体量を確保して、反応空間内を高濃度の炭素源ガス雰囲気に維持し続けることができ、結晶性、純度等の点で良質なナノカーボン材料を製造することができる。 According to the nanocarbon material manufacturing apparatus and the nanocarbon material manufacturing method of the present invention, the tank body and the organic liquid are disposed so that the closed space and the organic liquid are in contact with each other, and the catalyst-supporting substrate disposed in the closed space is heated. Since the evaporation gas of organic liquid is generated in the reaction space formed by the closed space and the nanocarbon material is vapor-phase grown on the catalyst of the substrate at the synthesis temperature, (1) the heating structure of only the substrate is sufficient, and the apparatus is compact. And cost reduction can be achieved. (2) In addition, since a vacuum apparatus or the like is not required, the apparatus can be configured at low cost, and a process of returning from vacuum to atmospheric pressure is not required, and the grown nanocarbon material can be easily recovered. It is easy to operate and manage the process at the manufacturing stage. In addition, (3) a high-concentration atmosphere of carbon source gas and a large temperature gradient phase can be reliably realized with a simple configuration, and this can be done in a closed space, so it does not contain impurities that are likely to be generated by changes in the temperature of the substrate. High-quality nanocarbon materials can be synthesized and the growth efficiency can be greatly improved. (4) Furthermore, since it is the production | generation by the vapor phase growth method in an organic liquid, the heating temperature adjustment of the organic liquid by the heating through a board | substrate can be performed correctly, and production | generation control of a nanocarbon material can be performed accurately. (5) In addition, since the reaction space contains almost no carrier gas, it is possible to easily set control parameters for synthesis of single-walled and multi-walled carbon nanotubes related to temperature, gas concentration, density, etc. ( 6). In particular, the communication space between the organic liquid and the tank body is formed so that the closed space of the tank body is the reaction space, and the entire surface surrounded by the tank wall of the tank body is the boundary between the reaction space and the organic liquid. As a result, a sufficient amount of organic liquid can be secured as a carbon source that is necessary for the synthesis reaction and almost all of the synthesis reaction can be used, and the reaction space can be maintained in a high-concentration carbon source gas atmosphere. In addition, it is possible to produce a high-quality nanocarbon material in terms of crystallinity and purity.
以下添付図面を参照しつつ本発明の実施形態に係るナノカーボン材料の製造装置並びにナノカーボン材料の製造方法について説明するが、本発明は以下の実施形態の構成にのみ限定されるものではない。まず、ナノカーボン材料の製造装置の構成について説明する。 Hereinafter, a nanocarbon material manufacturing apparatus and a nanocarbon material manufacturing method according to embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the configurations of the following embodiments. First, the configuration of the nanocarbon material manufacturing apparatus will be described.
図1は、本発明の第1の実施形態に係るナノカーボン材料の製造装置の原理的構成を示しており、本実施形態において、ナノカーボン材料の製造装置1は、閉鎖空間2aを内部に有する槽体2と、触媒3を担持した触媒担持基板4と、加熱装置5と、槽体2内に収容された有機液体6と、閉鎖空間2aに不活性ガスIGを供給する不活性ガス供給装置7と、境界部8と、を備えている。内部を閉じた槽体2に有機液体6を収容し、残部の容積空間を反応空間とし、触媒担持基板の加熱により合成条件を生成させて有機液体の蒸発ガスを炭素源ガスとして触媒上にナノカーボン材料を気相成長させるものである。 FIG. 1 shows the basic configuration of a nanocarbon material production apparatus according to a first embodiment of the present invention. In this embodiment, the nanocarbon material production apparatus 1 has a closed space 2a therein. Tank 2, catalyst-carrying substrate 4 carrying catalyst 3, heating device 5, organic liquid 6 accommodated in tank 2, and inert gas supply device for supplying inert gas IG to closed space 2 a 7 and a boundary portion 8. The organic liquid 6 is accommodated in the tank body 2 which is closed inside, the remaining volume space is used as a reaction space, a synthesis condition is generated by heating the catalyst-carrying substrate, and the organic liquid evaporative gas is used as a carbon source gas to form nano particles on the catalyst. A carbon material is vapor-phase grown.
ここでナノカーボン材料とは、ナノもしくはミクロン単位のカーボン材料をさし、好ましくは、径がナノメートルオーダーで、長さが数ミクロンから数百ミクロンオーダーのカーボン材料で、供給された炭素原料が触媒に作用することによって得られるもので、例えばファイバー形状、チューブ形状等の種々の形状を有するカーボンを言う。 Here, the nanocarbon material refers to a carbon material in nanometer or micron unit, preferably a carbon material having a diameter of the order of nanometers and a length of several microns to several hundreds of microns. It is obtained by acting on a catalyst and refers to carbon having various shapes such as a fiber shape and a tube shape.
図1において、槽体2は、四周壁21a〜21dと、天壁21eと、底壁21fと、により閉じた空間2aを内部に形成した、両端を閉鎖した角筒形あるいは丸筒形の筒形槽で形成されている。四周壁21a〜21dあるいは天壁21eのいずれかあるいはそれらのいくつかに図示しない点検用の開閉扉が設けられている。 In FIG. 1, a tank body 2 is a rectangular or round tube with both ends closed, in which a closed space 2 a is formed by four circumferential walls 21 a to 21 d, a top wall 21 e and a bottom wall 21 f. It is formed of a shape tank. One of the four walls 21a to 21d and the top wall 21e or some of them is provided with an inspection opening / closing door (not shown).
槽体2内には例えば槽体内高さの2分の1弱程度の液面高さとなるように炭素源としての有機液体6が投入されて収容配置されている。 In the tank body 2, for example, an organic liquid 6 as a carbon source is introduced and accommodated so that the liquid surface height is about a half of the tank body height.
本実施形態において、有機液体として例えばアルコールが適用されている。有機液体6は、カーボンナノチューブ等のナノカーボン材料の合成のための炭素源であり、常温常圧で液体の炭化水素、アルコール、エステル、ケトン、有機酸その他の炭素化合物が好適に使用される。炭化水素としては炭素数が5〜18の鎖状あるいは環状の炭化水素が好ましい。例えば、ペンタン、ヘキサン、ヘプタン、ベンゼン、トルエン等が挙げられる。アルコールとしては、炭素数が1〜16の鎖状あるいは環状の一価アルコール、多価アルコールが好ましい。例えば、メタノール、エタノール、1−プロパノール、2−ブタノール、エチレングリコール等が挙げられるが、特にメタノール、エタノールが好ましい。エステルとしては、炭素数が2以上の鎖状あるいは環状エステルが好ましい。例えば、ギ酸エチル、酢酸メチル、酪酸メチル等が挙げられる。ケトンとしては、炭素数が3以上の鎖状あるいは環状のケトンが好ましい。例えば、アセトン、メチルエチルケトン、シクロヘキサンが挙げられる。有機酸としては炭素数が1〜10の飽和あるいは不飽和のカルボン酸あるいはオキシカルボン酸が好ましい。これには例えば、ギ酸、酢酸、プロピオン酸、オレイン酸が挙げられる。さらに、その他の有機液体としては、例えばジエチルエーテル、ジイソプロピルエーテル等入手が容易なものを選択できる。 In this embodiment, for example, alcohol is applied as the organic liquid. The organic liquid 6 is a carbon source for synthesizing nanocarbon materials such as carbon nanotubes, and hydrocarbons, alcohols, esters, ketones, organic acids, and other carbon compounds that are liquid at normal temperature and pressure are preferably used. The hydrocarbon is preferably a chain or cyclic hydrocarbon having 5 to 18 carbon atoms. For example, pentane, hexane, heptane, benzene, toluene and the like can be mentioned. As the alcohol, a linear or cyclic monohydric alcohol or polyhydric alcohol having 1 to 16 carbon atoms is preferable. For example, methanol, ethanol, 1-propanol, 2-butanol, ethylene glycol and the like can be mentioned, and methanol and ethanol are particularly preferable. The ester is preferably a chain or cyclic ester having 2 or more carbon atoms. For example, ethyl formate, methyl acetate, methyl butyrate and the like can be mentioned. The ketone is preferably a chain or cyclic ketone having 3 or more carbon atoms. For example, acetone, methyl ethyl ketone, and cyclohexane are mentioned. The organic acid is preferably a saturated or unsaturated carboxylic acid or oxycarboxylic acid having 1 to 10 carbon atoms. This includes, for example, formic acid, acetic acid, propionic acid, oleic acid. Furthermore, as other organic liquids, for example, easily available materials such as diethyl ether and diisopropyl ether can be selected.
そして、閉鎖空間2aの一部、すなわち、全体の空間のうち有機液体6が占有する容積の残部の閉鎖空間が反応空間2bとされる。すなわち、本実施形態において、槽体2内の閉鎖された空間部分が反応空間2bとされ、図2に示すように槽体2の槽璧である四周壁21a〜21dで囲まれた面F全体が反応空間2bと有機液体6との境界部8となるように有機液体6と槽体2との連通部9が形成されている。したがって、槽体2の槽璧で囲まれた反応空間2bの有機液体との接液面全体で有機液体6と反応空間2bが連通しており、これによって、後述するように有機液体6からの蒸発ガス全体が無駄なく反応空間2bに供給され、高濃度の炭素源ガス雰囲気を維持することができる。 A part of the closed space 2a, that is, the remaining closed space of the volume occupied by the organic liquid 6 in the entire space is defined as the reaction space 2b. That is, in this embodiment, the closed space part in the tank body 2 is made into the reaction space 2b, and the whole surface F enclosed by the four surrounding walls 21a-21d which are the tank walls of the tank body 2 as shown in FIG. A communication portion 9 between the organic liquid 6 and the tank body 2 is formed so as to be a boundary portion 8 between the reaction space 2 b and the organic liquid 6. Therefore, the organic liquid 6 and the reaction space 2b communicate with each other over the entire liquid contact surface with the organic liquid in the reaction space 2b surrounded by the tank wall of the tank body 2, and thereby, as described later, The entire evaporated gas is supplied to the reaction space 2b without waste, and a high concentration carbon source gas atmosphere can be maintained.
また、本実施形態では、槽体2の閉鎖空間2aに面する有機液体6の液面外縁サイズF□が槽体2の内法サイズ(x1、x2、y1、y2)と略同一で構成されている。これによって、合成反応に必要で合成反応にほぼすべて利用可能な炭素源としての充分な有機液体量を確保でき、それによって有機液体の蒸発ガスがすべて反応空間に供給され常時高濃度の炭素源ガス雰囲気維持を実効させ得る。また、触媒担持基板4が槽体2の閉鎖空間2bに挿入、取り出し自在に設けられ、槽体2内に投入された有機液体6の液面Fが反応空間2bと有機液体6との境界部8を形成するように槽体2の閉鎖空間2aは閉鎖筒形に形成されている。すなわち、槽体の内壁が平面状に設けられることにより槽体の内法全体について有機液体が収容され、有機液体の蒸発時の蒸発ガスがすべて反応空間に供給され常時高濃度の炭素源ガス雰囲気を維持しつづけることができる。 Further, in the present embodiment, the liquid surface outer edge size F □ of the organic liquid 6 facing the closed space 2a of the tank body 2 is configured to be substantially the same as the inner size (x1, x2, y1, y2) of the tank body 2. ing. This makes it possible to secure a sufficient amount of organic liquid as a carbon source that is necessary for the synthesis reaction and that can be used for almost all of the synthesis reaction. The atmosphere can be maintained effectively. Further, the catalyst-carrying substrate 4 is provided so as to be freely inserted into and removed from the closed space 2 b of the tank body 2, and the liquid level F of the organic liquid 6 introduced into the tank body 2 is the boundary between the reaction space 2 b and the organic liquid 6. 8, the closed space 2 a of the tank body 2 is formed in a closed cylindrical shape. That is, the inner wall of the tank body is provided in a flat shape, so that the organic liquid is accommodated for the entire inner method of the tank body, and all the evaporated gas at the time of evaporation of the organic liquid is supplied to the reaction space so that the carbon source gas atmosphere is always in a high concentration. Can be maintained.
槽体2の外面は冷却ジャケット等の冷却装置10が設けられて槽体全体を冷却する。 A cooling device 10 such as a cooling jacket is provided on the outer surface of the tank body 2 to cool the entire tank body.
槽体2内の閉鎖空間、特にその反応空間2bには、ヒータ等の加熱装置5が設置されている。実施形態では、ヒータは縦方向に長く配置されている。25は、基板温度検出用温度センサである。 A heating device 5 such as a heater is installed in a closed space in the tank body 2, particularly in the reaction space 2 b. In the embodiment, the heater is arranged long in the vertical direction. Reference numeral 25 denotes a substrate temperature detection temperature sensor.
さらに、この加熱装置6のヒータに加熱される位置と槽体から引き上げられて外部に取り出す位置とに位置変更可能に触媒担持基板4が設けられている。触媒担持基板4は、例えばシリカ、アルミナ、ゼオライト,MgO、ジルコニア、チタニアを用いることができる。すなわち、触媒担持基板4は図示しない挿脱装置に支持されて、ヒータに沿うように上下方向に槽体2の反応空間2bに対して挿入、取り出し自在に設けられている。触媒担持基板4が反応空間2bに配置されたときには、それに担持させた触媒3は槽体2の閉鎖空間である反応空間2bに曝された位置であり、かつ、触媒3を有機液体6に直接に接触させない位置に配置される。触媒5としては、例えば金属触媒があり、例えばCr、Fe、Co、Ni、Cu、Mo、Pt、Pd、Rh、Ir、Y、La、Ce、Pr、Nd、Gd、Tb、Dy、Ho、Er、Lu等を挙げることができる。また、それらの金属の組み合わせなども用いることができる。ヒータから外部に引き出された電極11が設けられており、図示を省略した電源に接続されて加熱用電力が供給される。なお、12は、触媒担持基板4を反応空間2bに挿入した際に内部を気密閉鎖するスライドシャッタである。 Furthermore, the catalyst-carrying substrate 4 is provided so that the position can be changed between a position heated by the heater of the heating device 6 and a position where the heater is pulled up and taken out. For example, silica, alumina, zeolite, MgO, zirconia, or titania can be used for the catalyst support substrate 4. That is, the catalyst carrying substrate 4 is supported by an unillustrated insertion / removal device, and is provided so as to be freely inserted into and removed from the reaction space 2b of the tank body 2 in the vertical direction along the heater. When the catalyst-carrying substrate 4 is disposed in the reaction space 2b, the catalyst 3 carried thereon is in a position exposed to the reaction space 2b that is a closed space of the tank body 2, and the catalyst 3 is directly applied to the organic liquid 6. It is arrange | positioned in the position which is not made to contact. Examples of the catalyst 5 include metal catalysts such as Cr, Fe, Co, Ni, Cu, Mo, Pt, Pd, Rh, Ir, Y, La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Lu, etc. can be mentioned. A combination of these metals can also be used. An electrode 11 drawn out from the heater is provided, and is connected to a power source (not shown) to supply heating power. Reference numeral 12 denotes a slide shutter that hermetically seals the interior when the catalyst-carrying substrate 4 is inserted into the reaction space 2b.
さらに、槽体2の槽璧には不活性ガス供給ポート13が設置され、不活性ガス供給装置7からガス供給管14を介して不活性ガスIGが反応空間2b内に供給される。槽体の閉鎖空間には収容された有機液体6が配置されるので、その液面高さよりも高い位置に不活性ガス供給ポート13が設置されている。さらに、この不活性ガス供給ポート13よりも低位置に有機液体供給ポート15が設置されている。有機液体供給ポート15の設置高さはこれに限らず、不活性ガス供給ポート13よりも高位置であったり、あるいは槽体の周壁に限らず、天壁などに設けてもよい。有機液体供給装置16から有機液体供給管17を介して有機液体6が槽体2の閉鎖空間2aに導入される。 Further, an inert gas supply port 13 is installed in the tank wall of the tank body 2, and the inert gas IG is supplied from the inert gas supply device 7 through the gas supply pipe 14 into the reaction space 2 b. Since the accommodated organic liquid 6 is disposed in the closed space of the tank body, the inert gas supply port 13 is installed at a position higher than the liquid level. Further, an organic liquid supply port 15 is installed at a position lower than the inert gas supply port 13. The installation height of the organic liquid supply port 15 is not limited to this, and may be higher than the inert gas supply port 13 or may be provided not only on the peripheral wall of the tank body but also on the top wall. The organic liquid 6 is introduced from the organic liquid supply device 16 into the closed space 2 a of the tank body 2 through the organic liquid supply pipe 17.
図1において、天壁21eには、そのジャケット部分を貫通し槽体の外部に突出して還流装置18が設けられている。還流装置18は、加熱による有機液体からの蒸発ガスを冷却して槽体側に還流させる還流手段であり、本実施形態において還流装置18は、天壁21eのジャケット部分を貫通し槽体2の外部に突出した閉鎖筒管19と、閉鎖筒管19内に凝縮管部20を突入させて外部に循環連通する冷却管装置22と、を備えている。冷却管装置22の冷却管内に水等の冷媒流体を流して凝縮管部20で蒸発ガスを凝縮液化させケース体内へ還流させる。なお、図中23は、有機液体の蒸発ガスや不活性ガス等のリリーフ孔である。また、24は、必要に応じて不活性ガスを供給するための上部供給用バルブであり、不活性ガス供給装置7に供給管を介して接続されている。 In FIG. 1, the top wall 21e is provided with a reflux device 18 that penetrates the jacket portion and protrudes outside the tank body. The reflux device 18 is a reflux means for cooling the evaporated gas from the organic liquid by heating and refluxing it to the tank body side. In this embodiment, the reflux device 18 penetrates the jacket portion of the top wall 21e and is outside the tank body 2. And a cooling pipe device 22 that circulates and communicates with the condensing pipe portion 20 into the closed cylinder pipe 19. A refrigerant fluid such as water is allowed to flow through the cooling pipe of the cooling pipe device 22 to condense and liquefy the evaporated gas in the condensation pipe portion 20 and return it to the case body. In the figure, reference numeral 23 denotes a relief hole for evaporating gas or inert gas of organic liquid. Reference numeral 24 denotes an upper supply valve for supplying an inert gas as required, and is connected to the inert gas supply device 7 via a supply pipe.
なお、本実施形態において、不活性ガス供給装置、外部電源、触媒担持基板4の挿入取出し装置、加熱装置に電気的に接続した図示省略の制御装置を設け、工程制御を行なわせるようになっている。 In this embodiment, an inert gas supply device, an external power source, a catalyst carrier substrate 4 insertion / extraction device, and a control device (not shown) electrically connected to the heating device are provided to perform process control. Yes.
次に、図3を参照して第1実施形態のナノカーボン材料の作用について、その製造方法とも合わせ説明する。図3において、有機液体供給装置16を駆動して有機液体供給ポート15から例えばエタノール液を槽体2の閉鎖空間に供給し、例えば容積空間の半分程度の量を充填する(S1)。このときの、有機液体量が閉鎖空間の残部である反応空間容積を決め、この反応空間においてナノカーボン材料合成用の触媒が配置されるから、ある程度の反応空間容積を確保できる程度に有機液体投入量を設定する必要がある。 Next, the operation of the nanocarbon material of the first embodiment will be described with reference to FIG. In FIG. 3, the organic liquid supply device 16 is driven to supply, for example, an ethanol liquid from the organic liquid supply port 15 to the closed space of the tank body 2, for example, filling about half of the volume space (S 1). At this time, the amount of the organic liquid determines the reaction space volume that is the remainder of the closed space, and the catalyst for synthesizing the nanocarbon material is arranged in this reaction space, so that the organic liquid is charged to the extent that a certain amount of reaction space volume can be secured. The amount needs to be set.
次に、不活性ガス供給装置7を駆動して不活性ガス供給ポート13から例えばアルゴンガスAr等の不活性ガスIGを供給し反応空間2b内を高濃度に充填する(S2)。これはナノカーボン材料の合成前に触媒に酸化膜が形成されて気相成長を妨げられないようにするために酸素をパージするためである。 Next, the inert gas supply device 7 is driven to supply an inert gas IG such as argon gas Ar from the inert gas supply port 13 to fill the reaction space 2b with a high concentration (S2). This is because oxygen is purged so that an oxide film is formed on the catalyst before the synthesis of the nanocarbon material and vapor phase growth is not hindered.
次に、触媒担持基板4を反応空間2bに挿入し例えば基板に設けたガイドにより加熱装置5のヒータ5aに沿わせて密着させる(S3)。 Next, the catalyst-carrying substrate 4 is inserted into the reaction space 2b and brought into close contact with the heater 5a of the heating device 5 by, for example, a guide provided on the substrate (S3).
次に、加熱装置のヒータ5aに通電し加熱する(S4)。例えば炭素源有機液体がメタノールやエタノールの場合、64℃程度あるいは78℃程度で表面から蒸発を始め、蒸発ガスを反応空間に生成させる(S5)。加熱装置の加熱開始後に不活性ガス供給を停止する(S6)。これにより、蒸発ガスと不活性ガスが置換され反応空間2b内でしだいに蒸発ガス濃度が高くなっていく。 Next, the heater 5a of the heating device is energized and heated (S4). For example, when the carbon source organic liquid is methanol or ethanol, evaporation starts from the surface at about 64 ° C. or about 78 ° C., and evaporated gas is generated in the reaction space (S5). The inert gas supply is stopped after the heating apparatus starts heating (S6). As a result, the evaporation gas and the inert gas are replaced, and the concentration of the evaporation gas gradually increases in the reaction space 2b.
昇温時に反応空間2b内は有機液体蒸発ガスの濃度をしだいに大きくし、合成温度時には高濃度の有機液体蒸発ガス雰囲気となる。そして、触媒担持基板4が目的のナノカーボン材料の合成温度の例えば900℃に到達すると触媒上にナノカーボン材料が気相成長する(S7)。このとき、反応空間2b内は高濃度の炭素源ガスが存在しかつ新たな蒸発ガスが継続して生成され続ける状態となっている。そして、反応空間内では融点が60℃〜80℃程度の有機液体と900℃の基板4が近接した位置に配置されこれによって大きな温度勾配を形成している。この反応空間の雰囲気において、高温の基板表面で触媒粒子によって炭素源ガスが分解し、炭素原子が触媒粒子に溶け込んで過飽和状態になることにより、炭素原子が触媒内部から表面に析出し成長するものと考えられる。 The reaction space 2b gradually increases in concentration in the reaction space 2b when the temperature rises, and becomes a high concentration organic liquid evaporation gas atmosphere at the synthesis temperature. When the catalyst-supporting substrate 4 reaches a synthesis temperature of the target nanocarbon material, for example, 900 ° C., the nanocarbon material is vapor-phase grown on the catalyst (S7). At this time, the reaction space 2b is in a state in which a high concentration of carbon source gas exists and new evaporation gas is continuously generated. In the reaction space, the organic liquid having a melting point of about 60 ° C. to 80 ° C. and the substrate 4 having a temperature of 900 ° C. are arranged close to each other, thereby forming a large temperature gradient. In this reaction space atmosphere, carbon source gas is decomposed by catalyst particles on the surface of the high-temperature substrate, and carbon atoms dissolve into the catalyst particles and become supersaturated, so that carbon atoms precipitate and grow on the surface from the inside of the catalyst. it is conceivable that.
合成反応終了後、加熱装置5による加熱を停止し、この間、触媒担持基板4の温度が室温に戻るまで不活性ガスIGを反応空間2bに供給再開させる(S8)。これにより、触媒3の温度が低下する過程でカーボン以外の不純物やアモルファスカーボンが生成されるのを防止する。また、ヒータ停止により気相空間としての反応空間2b内で有機液体の蒸発ガスが冷却されることにより凝集し、有機液体6が反応空間2b内に浸入して、生成したナノカーボン材料が基板から剥離しないようにし得る。 After completion of the synthesis reaction, heating by the heating device 5 is stopped, and during this time, the inert gas IG is restarted to be supplied to the reaction space 2b until the temperature of the catalyst-carrying substrate 4 returns to room temperature (S8). This prevents impurities other than carbon and amorphous carbon from being generated in the process of lowering the temperature of the catalyst 3. Further, the evaporative gas of the organic liquid is aggregated by cooling in the reaction space 2b as the gas phase space by stopping the heater, and the organic liquid 6 enters the reaction space 2b, and the generated nanocarbon material is removed from the substrate. It can be prevented from peeling.
この後、触媒担持基板4を反応空間2bから引き抜いて槽体外に移動させ(S9)、所望のナノカーボン材料を回収する(S10)。 Thereafter, the catalyst-carrying substrate 4 is pulled out of the reaction space 2b and moved out of the tank body (S9), and a desired nanocarbon material is recovered (S10).
上記のように、本実施形態のナノカーボン材料の製造装置では、ナノカーボン材料の製造装置1は、閉鎖空間2aを内部に有する槽体2と、触媒3を担持した触媒担持基板4と、加熱装置5と、槽体2内に収容された有機液体6と、閉鎖空間2aに不活性ガスIGを供給する不活性ガス供給装置7と、境界部8と、を備えている。内部を閉じた槽体2に有機液体6を収容し、残部の容積空間を反応空間とし、触媒担持基板の加熱により合成条件を生成させて有機液体の蒸発ガスを炭素源ガスとして触媒上にナノカーボン材料を気相成長させる。このとき、合成反応に必要で合成反応にほぼすべて利用可能な炭素源としての有機液体量を常時確保でき、それによって有機液体の蒸発ガスがすべて反応空間に供給され常時高濃度の炭素源ガス雰囲気を維持させる。特に、槽体の槽璧で囲まれた面全体が反応空間2bと有機液体6との境界部8となるように有機液体6と槽体2との連通部9が形成されて、槽体2の槽璧で囲まれた反応空間2bの有機液体との接液面全体から有機液体6の蒸発ガスを生成し常時反応空間内を高濃度の炭素源ガス雰囲気に維持させることができる結果、基板の温度昇降変化により生成されやすい不純物を含まない高純度、高品質のカーボンナノチューブを合成することができるばかりでなく、反応空間にはキャリアガスなどを含まないから温度や気体濃度あるいは密度等と関連する単層、複層のチューブ合成の制御パラメータ設定が簡単となる。また、真空装置や開放型でのキャリアガスの注入排気制御が不要で、かつ、槽体自体の構成が簡単であり装置コストの低コスト化を図れる。のみならず、成長したカーボンナノチューブを液体に接触させることで流されて触媒からカーボンナノチューブが離脱することが防止されるので、基体への触媒固定方法を限定させる必要がなく、よって触媒選択の自由度が高い。つまり、例えば触媒としての金属塩をゼオライト等に担持させた溶剤を作製し、基板への塗布処理、乾燥により基板へ固定したものでも適用可能である。また、化学気相合成法で単層・二層カーボンナノチューブの効率的な触媒として用いられる有機金属膜なども使用することができる。有機金属触媒として、例えば金属カルボニル、カルベン錯体、フェロセンを含むメタロセン等が挙げられる。また、ケイ素、ヒ素、ホウ素等の半金属化合物などを用いることができる。また、ディップコーティングやスピンコーティング、滴下などで簡単に良好な精度の膜厚制御が可能であり、これによって、単層、二層カーボンナノチューブ合成を簡易に実現できる。 As described above, in the nanocarbon material production apparatus of the present embodiment, the nanocarbon material production apparatus 1 includes a tank body 2 having a closed space 2a therein, a catalyst-carrying substrate 4 carrying a catalyst 3, and heating. A device 5, an organic liquid 6 accommodated in the tank body 2, an inert gas supply device 7 for supplying an inert gas IG to the closed space 2 a, and a boundary portion 8 are provided. The organic liquid 6 is accommodated in the tank body 2 which is closed inside, the remaining volume space is used as a reaction space, a synthesis condition is generated by heating the catalyst-carrying substrate, and the organic liquid evaporative gas is used as a carbon source gas to form nano particles on the catalyst. Vapor growth of carbon material. At this time, the amount of organic liquid as a carbon source that is necessary for the synthesis reaction and can be used almost completely in the synthesis reaction can be secured at all times. To maintain. In particular, the communication portion 9 between the organic liquid 6 and the tank body 2 is formed so that the entire surface surrounded by the tank wall of the tank body becomes the boundary portion 8 between the reaction space 2 b and the organic liquid 6. As a result, the evaporative gas of the organic liquid 6 can be generated from the entire contact surface with the organic liquid in the reaction space 2b surrounded by the tank wall, and the reaction space can be constantly maintained in a high concentration carbon source gas atmosphere. In addition to being able to synthesize high-quality, high-quality carbon nanotubes that do not contain impurities that are likely to be generated due to changes in temperature, the reaction space does not contain carrier gas, etc., so it is related to temperature, gas concentration, density, etc. This makes it easy to set control parameters for single- and multi-layer tube synthesis. In addition, it is not necessary to control the injection / exhaust of the carrier gas in a vacuum apparatus or an open type, and the structure of the tank body itself is simple, so that the cost of the apparatus can be reduced. In addition, since the grown carbon nanotubes are prevented from flowing away from the catalyst by being brought into contact with the liquid, it is not necessary to limit the method of fixing the catalyst to the substrate, and thus freedom of catalyst selection High degree. That is, for example, a solvent in which a metal salt as a catalyst is supported on zeolite or the like, and fixed to the substrate by applying treatment to the substrate and drying can also be applied. In addition, an organic metal film that is used as an efficient catalyst for single- and double-walled carbon nanotubes by chemical vapor synthesis can also be used. Examples of the organometallic catalyst include metal carbonyl, carbene complex, metallocene including ferrocene, and the like. In addition, metalloid compounds such as silicon, arsenic, and boron can be used. In addition, it is possible to easily control the film thickness with good accuracy by dip coating, spin coating, dripping, etc., and this makes it possible to easily synthesize single-walled and double-walled carbon nanotubes.
上記実施形態で、触媒担持基板4の槽体2の反応空間2bに対する挿入位置は、図1上、断面で左端寄り位置であるが、右端、中央寄り位置などでもよいし、また挿入方向も水平方向への挿脱構成とすることができる。また、加熱装置のヒータ5aは槽体2に固定的に設置しているが、触媒担持基板と共に、あるいは単独で反応空間に対して挿脱移動しうるようにしても良い。また、槽体2は円筒形、楕円筒形、多角筒形等の構造としてもよい。 In the above embodiment, the insertion position of the catalyst-supporting substrate 4 with respect to the reaction space 2b of the tank body 2 is a position closer to the left end in the cross section in FIG. 1, but may be a right end, a position closer to the center, etc. An insertion / removal configuration in the direction can be adopted. Further, although the heater 5a of the heating device is fixedly installed in the tank body 2, it may be configured to be able to be inserted into and removed from the reaction space together with the catalyst carrying substrate or independently. The tank body 2 may have a cylindrical shape, an elliptical cylindrical shape, a polygonal cylindrical shape, or the like.
また、これらのナノカーボン材料の製造方法としては、槽体2の周壁21a〜21dで囲まれた面F全体が有機液体6と反応空間2bとの境界8をなすように槽体2内の反応空間2bに面して有機液体6を配置し、触媒3を有機液体6に直接に接触させない位置で、かつ触媒3を槽体2の反応空間2bに曝した状態で触媒担持基板4を配置し、反応空間2b内に不活性ガスIGを供給しつつ、触媒担持基板4を加熱して材料の合成温度にある場合に有機液体6の蒸発ガスと置換して槽体2の周壁21a〜21dで囲まれた面F全体で有機液体蒸発ガスを供給しつつ触媒3上にカーボンナノ材料を合成するものである。 Moreover, as a manufacturing method of these nanocarbon materials, reaction in the tank body 2 is performed so that the entire surface F surrounded by the peripheral walls 21a to 21d of the tank body 2 forms a boundary 8 between the organic liquid 6 and the reaction space 2b. The organic liquid 6 is disposed facing the space 2b, the catalyst supporting substrate 4 is disposed in a position where the catalyst 3 is not in direct contact with the organic liquid 6 and the catalyst 3 is exposed to the reaction space 2b of the tank body 2. While the inert gas IG is supplied into the reaction space 2b, the catalyst-carrying substrate 4 is heated to replace the evaporating gas of the organic liquid 6 when the material is at the synthesis temperature of the material, and the peripheral walls 21a to 21d of the tank body 2 are replaced. The carbon nanomaterial is synthesized on the catalyst 3 while supplying the organic liquid evaporative gas over the entire enclosed surface F.
次に、図4ないし図10により、本発明の第2の実施形態に係るナノカーボン材料の製造装置30を説明するが、第1実施形態と同一部材には同一符号を付して説明する。第2実施形態のナノカーボン材料の製造装置30は、液槽31と、液槽31内に充填された有機液体6と、閉鎖空間2aを内部に有する槽体200と、触媒3を担持した触媒担持基板4と、加熱装置5と、閉鎖空間2aに不活性ガスIGを供給する不活性ガス供給装置7と、境界部8と、を備えている。 Next, the nanocarbon material manufacturing apparatus 30 according to the second embodiment of the present invention will be described with reference to FIGS. 4 to 10. The same members as those in the first embodiment will be described with the same reference numerals. The nanocarbon material manufacturing apparatus 30 according to the second embodiment includes a liquid tank 31, an organic liquid 6 filled in the liquid tank 31, a tank body 200 having a closed space 2 a therein, and a catalyst carrying the catalyst 3. The carrier substrate 4, the heating device 5, an inert gas supply device 7 that supplies an inert gas IG to the closed space 2 a, and a boundary portion 8 are provided.
この実施形態では、槽体200は下面開口200Aを連通部9とする反転ケース体からなり、さらに、有機液体6は、槽体より大きな液槽31に投入配置されている。そして、槽体200全体が開口面を下側に配置した反転状態のままで液槽31内の有機液体6内に挿入、浸漬される。槽体200全体は支持機構32を介して液槽31内の有機液体6に対して浸漬、引き揚げ可能に支持される。 In this embodiment, the tank body 200 is composed of an inverted case body having the lower surface opening 200A as the communication portion 9, and the organic liquid 6 is placed in a liquid tank 31 larger than the tank body. And the whole tank body 200 is inserted and immersed in the organic liquid 6 in the liquid tank 31, with the opening surface arranged in the inverted state. The entire tank body 200 is supported via the support mechanism 32 so as to be immersed in and withdrawn from the organic liquid 6 in the liquid tank 31.
この実施形態では、下面開口200Aのみを有機液体6側に開放しているので、槽体200を反転状態で液体中に浸漬させると槽体内の閉鎖空間は槽体と有機液体により閉鎖される。したがって、この状態で外部から不活性ガスを閉鎖空間に供給すると一種の上方置換法により、不活性ガス又は有機液体の蒸発ガスが該閉鎖空間に供給される。 In this embodiment, since only the lower surface opening 200A is opened to the organic liquid 6 side, when the tank body 200 is immersed in the liquid in an inverted state, the closed space in the tank body is closed by the tank body and the organic liquid. Accordingly, when an inert gas is supplied from the outside to the closed space in this state, an inert gas or an evaporating gas of an organic liquid is supplied to the closed space by a kind of upward displacement method.
具体的には、図4(a)において、液槽31は、有機液体6を内部に収容し、上面側を開閉自在とした中空容器体からなり、上面開口51は蓋部材33により開閉自在に閉鎖される。液槽31の四周壁及び底壁は、外部が液槽31の周壁及び底壁と二重壁を形成して間隙内に冷却用流体、固体などの冷却媒体が配置されて冷却装置10が形成され、液槽31内を冷却する。 Specifically, in FIG. 4A, the liquid tank 31 is formed of a hollow container body that contains the organic liquid 6 and whose upper surface is freely opened and closed, and the upper surface opening 51 can be opened and closed by the lid member 33. Closed. The four circumferential walls and the bottom wall of the liquid tank 31 form the double wall with the peripheral wall and the bottom wall of the liquid tank 31, and a cooling medium such as a cooling fluid and a solid is disposed in the gap to form the cooling device 10. Then, the liquid tank 31 is cooled.
蓋部材33により槽体200は支持されて蓋部材の下方位置に吊支状に支持される。したがって、蓋部材33の開閉に応じて槽体200が有機液体6内に浸漬される状態と、引き上げられて合成されたナノカーボン材料の回収操作などに供される状態と、が形成される。 The tank body 200 is supported by the lid member 33 and is supported in a suspended manner at a position below the lid member. Therefore, a state in which the tank body 200 is immersed in the organic liquid 6 according to the opening and closing of the lid member 33 and a state in which the nanocarbon material synthesized by being pulled up is recovered are formed.
詳しくは、図4(a)において、蓋部材33には、外部電源34に接続する電極35としての電極棒Rがその上端部を蓋部材33から上方に突設させ、下部が蓋部材33を貫通して下端側を槽体200に固定して蓋部材33により槽体200をその下方位置において支持している。したがって、蓋部材33を液槽31の開口を閉鎖するとそのまま液槽31の有機液体6内に槽体200全体が浸漬されるようになっている。ここに、支持機構32は、槽体200の支持体本体を構成する蓋部材33と、蓋部材33に上部を固定し下部側に槽体200を支持する電極棒Rと、を含む。 Specifically, in FIG. 4A, an electrode rod R as an electrode 35 connected to the external power source 34 is provided on the lid member 33 so that its upper end protrudes upward from the lid member 33, and the lower portion has the lid member 33. It penetrates and the lower end side is fixed to the tank body 200, and the tank body 200 is supported at the lower position by the lid member 33. Therefore, when the opening of the liquid tank 31 is closed with the lid member 33, the entire tank body 200 is immersed in the organic liquid 6 of the liquid tank 31 as it is. Here, the support mechanism 32 includes a lid member 33 constituting a support body of the tank body 200, and an electrode rod R that fixes the upper part to the lid member 33 and supports the tank body 200 on the lower side.
また、蓋部材33の中央に穿孔した開口36を介して通流する有機液体6の蒸発ガスを凝縮還流させる還流装置18が蓋部材33から上方に突設して設けられている。還流装置18は、開口36に連通する一端のみを開口した閉鎖筒管19と、閉鎖筒管19内に凝縮管部20を突入させて外部に循環連通する冷却管装置22と、を備えている。冷却管装置22の冷却管内に水等の冷媒流体を流して凝縮管部20で蒸発ガスを凝縮液化させ液槽31の有機液体貯留部へ還流させる。なお、図中37は、不活性ガス又は有機液体蒸発ガスのリリーフ孔である。さらに、本実施形態において、蓋部材33には必要に応じて外部から不活性ガスIGを導入させるためのバルブ38、さらには後述する不活性ガス供給装置7のガス導入管42が該蓋を貫通し下端側を有機液体内に配置させて取付けあるいは、支持されている。 A reflux device 18 for condensing and refluxing the evaporated gas of the organic liquid 6 flowing through the opening 36 drilled in the center of the lid member 33 is provided so as to protrude upward from the lid member 33. The reflux device 18 includes a closed tube 19 that is open at only one end that communicates with the opening 36, and a cooling tube device 22 that enters the closed tube 19 into the condensation tube portion 20 and circulates and communicates with the outside. . A refrigerant fluid such as water is flowed into the cooling pipe of the cooling pipe device 22 to condense and liquefy the evaporative gas in the condensing pipe part 20 and return it to the organic liquid storage part of the liquid tank 31. In the figure, reference numeral 37 denotes a relief hole for an inert gas or an organic liquid evaporating gas. Further, in the present embodiment, a valve 38 for introducing an inert gas IG from the outside to the lid member 33 as necessary, and a gas introduction pipe 42 of an inert gas supply device 7 to be described later pass through the lid. The lower end is disposed or supported in the organic liquid.
有機液体は、上記第1実施形態と同様の炭素源液体を用いることができる。 As the organic liquid, the same carbon source liquid as that in the first embodiment can be used.
前述の通り、槽体200は、下面を開放し開放壁面側を下向きに配置させた上下反転ケースの態様で有機液体6中に配置される。詳細には、槽体200は、下面の開口200Aを有し、四周壁201a〜201dと、天壁201eとにより下面を開口した中空立体矩形状で構成されている。特に、本実施形態では、四周壁の側壁201bを触媒担持基板4が兼用して壁体を構成している。触媒担持基板4は槽体200の一壁部として一体的に成形あるいは組み付けされている。槽体200は耐熱性で有機液体と化学反応しない素材で例えば石英ガラスその他の構造物壁体から構成される。槽体200はその内部温度を測定してカーボンナノチューブ等のナノカーボン材料の合成温度を検知する必要があり、不透明材などの非透過性素材を用いた場合には、温度測定用の透過窓などを形成するとよい。また、触媒担持基板4の加熱温度を検出する加熱温度検出手段としての放射温度計40、並びにケース体内温度検出のための図示しない温度センサが設置されている。槽体200の具体的な外形、内部構造、材質は加熱合成条件生成、不活性ガスと有機液体蒸発ガスとの置換機能を損なわない限りにおいて、任意に設定することができる。 As described above, the tank body 200 is disposed in the organic liquid 6 in the form of an upside down case in which the lower surface is opened and the open wall surface is disposed downward. Specifically, the tank body 200 has an opening 200A on the lower surface, and is formed in a hollow three-dimensional rectangular shape whose lower surface is opened by the four peripheral walls 201a to 201d and the top wall 201e. In particular, in the present embodiment, the wall 201 is configured such that the side wall 201b of the four circumferential walls is also used as the catalyst carrying substrate 4. The catalyst carrying substrate 4 is integrally formed or assembled as one wall portion of the tank body 200. The tank body 200 is a heat-resistant material that does not chemically react with the organic liquid, and is composed of, for example, quartz glass or other structure wall. It is necessary to measure the internal temperature of the tank body 200 to detect the synthesis temperature of the nanocarbon material such as a carbon nanotube. When a non-permeable material such as an opaque material is used, a transmission window for temperature measurement, etc. It is good to form. Further, a radiation thermometer 40 as a heating temperature detecting means for detecting the heating temperature of the catalyst carrying substrate 4 and a temperature sensor (not shown) for detecting the temperature inside the case are installed. The specific external shape, internal structure, and material of the tank body 200 can be arbitrarily set as long as the heat synthesis condition generation and the replacement function of the inert gas and the organic liquid evaporation gas are not impaired.
触媒担持基板4は、加熱によりカーボンナノチューブを成長させる基体であり、触媒3を担持する支持手段である。基板材料として、例えばシリカ、アルミナ、ゼオライト、MgO、ジルコニア、チタニアを用いることができる。さらに、シリコン基板、耐熱ガラス基板、石英基板などの無機材料あるいはポリマー基板等の有機材料さらにはそれらの複合材料を選択することもできる。図4ないし図6において、触媒担持基板4は電極35を構成する電極棒Rの下端に接続されたヒータ5aに図示しないホルダを介して密着状に取り付けられており、これによって、電極棒Rを介して槽体200全体が液中で位置や開口の方向を決められて蓋部材33ににより安定して支持されている。加熱装置5は、ヒータ5a、電極35、外部の直流電源34を含む。 The catalyst-carrying substrate 4 is a base on which carbon nanotubes are grown by heating, and is a support means for carrying the catalyst 3. As the substrate material, for example, silica, alumina, zeolite, MgO, zirconia, titania can be used. Furthermore, an inorganic material such as a silicon substrate, a heat-resistant glass substrate, or a quartz substrate, an organic material such as a polymer substrate, or a composite material thereof can be selected. 4 to 6, the catalyst-carrying substrate 4 is attached in close contact with a heater 5a connected to the lower end of the electrode rod R constituting the electrode 35 via a holder (not shown). Thus, the entire tank body 200 is determined in position in the liquid and the direction of the opening, and is stably supported by the lid member 33. The heating device 5 includes a heater 5a, an electrode 35, and an external DC power supply 34.
触媒5としては、例えば金属触媒があり、例えばCr、Fe、Co、Ni、Cu、Mo、Pt、Pd、Rh、Ir、Y、La、Ce、Pr、Nd、Gd、Tb、Dy、Ho、Er、Lu等を挙げることができる。また、それらの金属の組み合わせなども用いることができる。 Examples of the catalyst 5 include metal catalysts such as Cr, Fe, Co, Ni, Cu, Mo, Pt, Pd, Rh, Ir, Y, La, Ce, Pr, Nd, Gd, Tb, Dy, Ho, Er, Lu, etc. can be mentioned. A combination of these metals can also be used.
基板上に金属触媒を担持させる方法として、水、アルコールなどの溶媒に金属塩を溶かして含浸させた担体をディップコーティングやスピンコーティングにより基板上に塗付させ、乾燥させて触媒を基板上に固定させたものなどを用いることができる。なお、コスト高等を考慮しなければスパッタリング、真空蒸着、イオンプレーティング、熱CVD、レーザCVDその他任意の薄膜形成手段を用いてもよい。さらに、本実施形態では、槽体200の構造材の全部又は一部を上記金属触媒材料で形成させることもできる。 As a method of supporting a metal catalyst on a substrate, a carrier impregnated by dissolving a metal salt in a solvent such as water or alcohol is applied on the substrate by dip coating or spin coating, and dried to fix the catalyst on the substrate. Can be used. Note that sputtering, vacuum deposition, ion plating, thermal CVD, laser CVD, or any other thin film forming means may be used if cost is not considered. Furthermore, in this embodiment, all or part of the structural material of the tank body 200 can be formed of the metal catalyst material.
そして、槽体200の内部が反応空間2bとされ、有機液体6の蒸発ガスVGが連通部9としての下面開口200Aから導入されて触媒3に接触する。すなわち、本実施形態において、槽体200の閉鎖空間200a全体が反応空間とされ、図4(a)、(b)、図5〜図10に示すように槽体200の槽璧である四周壁201a〜201dで囲まれた面F全体が反応空間(200a)と有機液体6との境界部8となるように有機液体6と槽体2との連通部9が形成されている。したがって、槽体200の槽璧で囲まれた反応空間の有機液体との接液面全体で有機液体6と反応空間が連通しており、これによって、有機液体6からの蒸発ガスVG全体が無駄なく反応空間に供給され、高濃度の炭素源ガス雰囲気を維持することができる。 And the inside of the tank body 200 is made into the reaction space 2b, and the evaporative gas VG of the organic liquid 6 is introduced from the lower surface opening 200A as the communication part 9 and contacts the catalyst 3. That is, in this embodiment, the whole closed space 200a of the tank body 200 is used as a reaction space, and the four-walled wall that is the tank wall of the tank body 200 as shown in FIGS. 4 (a), 4 (b), and FIGS. A communication portion 9 between the organic liquid 6 and the tank body 2 is formed so that the entire surface F surrounded by 201a to 201d becomes a boundary portion 8 between the reaction space (200a) and the organic liquid 6. Therefore, the organic liquid 6 and the reaction space communicate with each other over the entire liquid contact surface with the organic liquid in the reaction space surrounded by the tank wall of the tank body 200, so that the entire evaporated gas VG from the organic liquid 6 is wasted. Without being supplied to the reaction space, a high concentration carbon source gas atmosphere can be maintained.
さらに、上記の反応空間としての槽体200内閉鎖空間に不活性ガスを供給する不活性ガス供給装置7が設けられている。不活性ガス供給装置7は、アルゴン(Ar)、ヘリウム(He)、ネオン(Ne)等の希ガスや窒素(N2)ガスなどのように、化学反応を起こしにくい、あるいは反応性の低い物質のガスを必要に応じてケース体の反応空間内に供給し、密閉容器の有機液体6内に槽体200を配置させたときに、有機液体6が反応空間内に進入しないようにさせる液中での気相成長補助手段であり、本実施形態では加熱装置で触媒担持基板4を加熱し合成温度でカーボンを気相成長させているとき以外は槽体200内に不活性ガスIGが供給される。すなわち、不活性ガス供給装置7は槽体200の下面開口200Aに出口41が臨むように配置された不活性ガス導入管42を介して槽体内の反応空間に不活性ガスを供給駆動させる。不活性ガス供給装置7は必ずしも出口41を下面開口200Aに臨むように配置させた不活性ガス導入管42を槽体と別体に設けて配管した構成に限られず、例えば不活性ガス導入管42の先端を槽体200の周壁の1つに直接に連結して槽体内と連通させてもよい。Furthermore, the inert gas supply apparatus 7 which supplies an inert gas to the closed space in the tank body 200 as said reaction space is provided. The inert gas supply device 7 is a substance that hardly causes a chemical reaction or has low reactivity, such as a rare gas such as argon (Ar), helium (He), neon (Ne), or nitrogen (N 2 ) gas. When necessary, the gas is supplied into the reaction space of the case body and the organic liquid 6 is prevented from entering the reaction space when the tank body 200 is disposed in the organic liquid 6 of the sealed container. In this embodiment, the inert gas IG is supplied into the tank body 200 except when the catalyst-carrying substrate 4 is heated by the heating device and carbon is vapor-grown at the synthesis temperature. The That is, the inert gas supply device 7 drives and supplies the inert gas to the reaction space in the tank body via the inert gas introduction pipe 42 arranged so that the outlet 41 faces the lower surface opening 200A of the tank body 200. The inert gas supply device 7 is not necessarily limited to the configuration in which the inert gas introduction pipe 42 in which the outlet 41 is disposed so as to face the lower surface opening 200A is provided separately from the tank body, and for example, the inert gas introduction pipe 42 is provided. May be directly connected to one of the peripheral walls of the tank body 200 to communicate with the tank body.
図4に示すように、本実施形態において、不活性ガス供給装置7、外部電源34、基板温度検出センサとしての放射温度計40(図6)に電気的に接続された管理装置44が設けられている。管理装置44は、槽体200の有機液体6内への挿入、引き上げ、加熱装置5による加熱、合成温度条件生成、合成終了、などの工程を基板温度検出センサで温度検出しながら制御する管理手段であり、例えば演算制御機能を備えたコントローラ等が用いられる。 As shown in FIG. 4, in this embodiment, a management device 44 electrically connected to an inert gas supply device 7, an external power source 34, and a radiation thermometer 40 (FIG. 6) as a substrate temperature detection sensor is provided. ing. The management device 44 controls the steps such as insertion and pulling of the tank body 200 into the organic liquid 6, heating by the heating device 5, generation of the synthesis temperature condition, and completion of synthesis while detecting the temperature with the substrate temperature detection sensor. For example, a controller having an arithmetic control function is used.
次に、図7ないし図10並びに図11の工程フローチャートを参照して第2実施形態のナノカーボン材料の作用並びに製造方法について説明する。まず、液槽31内に有機液体6を導入し収容させる。このとき、槽体200全体を少なくとも完全に浸漬させさらにその状態で槽体の下面開口200Aから液槽の底壁まである程度深さ方向に余裕を有する程度の量の有機液体を投入させる(S11)。次に、外部のガス供給駆動装置により不活性ガス導入管42から不活性ガスを槽体200内に導入しながら蓋部材33を液槽の上部開口に閉蓋するように操作し、触媒担持基板4を付随させた槽体200を有機液体6中に浸漬する(図7)(S12)。このとき、不活性ガスIGが槽体200内に注入され続ける(S13)からこれらの機器を液中に沈降移動させる際に液圧が上昇して槽体内、つまり、反応空間内に有機液体が浸入するのを防止する(図8)。 Next, the operation and manufacturing method of the nanocarbon material of the second embodiment will be described with reference to the process flowcharts of FIGS. 7 to 10 and FIG. 11. First, the organic liquid 6 is introduced and stored in the liquid tank 31. At this time, the entire tank body 200 is at least completely immersed, and in that state, an amount of organic liquid having a margin in the depth direction is introduced from the lower surface opening 200A of the tank body to the bottom wall of the liquid tank (S11). . Next, an operation is performed so that the lid member 33 is closed at the upper opening of the liquid tank while introducing an inert gas into the tank body 200 from the inert gas introduction pipe 42 by an external gas supply driving device. 4 is immersed in the organic liquid 6 (FIG. 7) (S12). At this time, since the inert gas IG continues to be injected into the tank body 200 (S13), the liquid pressure rises when these devices are moved down into the liquid, and the organic liquid enters the tank body, that is, the reaction space. Intrusion is prevented (FIG. 8).
次に、電源34、電極35を介してヒータ5aに通電を開始し触媒担持基板4を加熱する(S14)。この際、基板温度が合成温度に達するまで不活性ガスIGを導入し続ける。有機液体6としてメタノールやエタノール等の低級アルコールを用いる場合、これらは沸点が64.7℃、78.3℃であり、加熱開始後、間もなくして有機液体表面から蒸発を始める(S15)。そして、たとえば900度程度の高温の合成温度に達する前に反応空間内は高濃度の炭素源ガス雰囲気が生成される。このとき、不活性ガスIGが槽体200内に導入され続けることで、槽体200の下面開口200Aに面する部分の有機液体は反応空間内に進入できなくされる。したがって、反応空間内で蒸発ガス濃度を高くしながら、反応空間内に支持された触媒に有機液体が直接に接触しないように保持される。この結果、設定温度以下でカーボン等目的となる物質以外の不純物が合成されて品質が劣るナノカーボン材料を生成しないようにしている。 Next, energization of the heater 5a is started via the power source 34 and the electrode 35 to heat the catalyst carrying substrate 4 (S14). At this time, the inert gas IG is continuously introduced until the substrate temperature reaches the synthesis temperature. When lower alcohols such as methanol and ethanol are used as the organic liquid 6, they have boiling points of 64.7 ° C. and 78.3 ° C., and soon after the start of heating, evaporation starts from the surface of the organic liquid (S15). For example, a high concentration carbon source gas atmosphere is generated in the reaction space before reaching a high synthesis temperature of about 900 degrees. At this time, since the inert gas IG is continuously introduced into the tank body 200, the portion of the organic liquid facing the lower surface opening 200A of the tank body 200 cannot enter the reaction space. Therefore, the organic liquid is kept from coming into direct contact with the catalyst supported in the reaction space while increasing the concentration of the evaporated gas in the reaction space. As a result, impurities other than the target substance such as carbon are synthesized at a temperature lower than the set temperature, so that a nanocarbon material with poor quality is not generated.
900℃程度の合成温度に達すると不活性ガス導入管42からの不活性ガス導入を停止し(S16)、一方、ヒータ5aによる加熱を維持して所要の合成時間中加熱を継続する(図6)。不活性ガス導入の停止により、それまで注入されていた不活性ガスIGが有機液体の蒸発ガスVGと置換されて(図9)、反応空間内が有機液体の蒸発ガスVGで飽和する。この状態で、ほぼ炭素源ガスのみが触媒3に接触し、気相雰囲気下でナノカーボン材料Nが成長する(S17)。この反応メカニズムはある程度推測されるとおり、高温の基板表面で触媒粒子によって炭素源ガスが分解し、炭素原子が触媒粒子に溶け込んで過飽和状態になることにより、炭素原子が触媒内部から表面に析出し成長するものと考えられる。 When the synthesis temperature reaches about 900 ° C., the introduction of the inert gas from the inert gas introduction pipe 42 is stopped (S16), while the heating by the heater 5a is maintained and the heating is continued for the required synthesis time (FIG. 6). ). By stopping the introduction of the inert gas, the inert gas IG injected so far is replaced with the organic liquid evaporating gas VG (FIG. 9), and the reaction space is saturated with the organic liquid evaporating gas VG. In this state, only the carbon source gas comes into contact with the catalyst 3, and the nanocarbon material N grows in a gas phase atmosphere (S17). As this reaction mechanism is presumed to some extent, the carbon source gas is decomposed by the catalyst particles on the substrate surface at a high temperature, and the carbon atoms dissolve into the catalyst particles and become supersaturated, so that the carbon atoms are deposited from the inside of the catalyst to the surface. It is considered to grow.
ナノカーボン材料Nが成長し合成終了したら、ヒータ41の電源を切ると同時、あるいはその直前、直後に外部の不活性ガス供給装置7を供給駆動させて不活性ガス導入管42から不活性ガスIGの槽体200内への供給を再開する(図10)。この不活性ガスIGの槽体200内への供給は、触媒担持基板4の温度が室温に戻るまで継続される(S18)。これにより、触媒3の温度が低下する過程でカーボン以外の不純物やアモルファスカーボンが生成されるのを防止する。また、ヒータ停止により気相空間としての反応空間内で有機ガスが冷却されることにより凝集し、有機液体6が反応空間内に進入して生成したナノカーボン材料Nが基板から剥離しないようにし得る。そして、不活性ガスIGを槽体200内へ導入しながら蓋部材33を操作して槽体200を有機液体6から引き上げて取り出し、ナノカーボン材料を回収する(S19)、(S20)。このようにして、槽体200の下面開口200Aからの有機液体6の蒸発ガスVGと外部から供給される不活性ガスIGとの交換により触媒3と有機液体6とを非接触としつつ有機液体蒸発ガスVGを反応空間内に飽和させて触媒担持基板4の合成温度条件においてナノカーボン材料Nを合成させる工程と、触媒担持基板4が合成温度に到達する前後において、基板温度の加熱上昇時及び加熱停止後の非加熱放冷時に、外部から不活性ガスを槽体内に供給する工程と、を実行させる。 When the nanocarbon material N grows and the synthesis is completed, the inert gas IG is supplied from the inert gas introduction pipe 42 by driving the external inert gas supply device 7 at the same time, immediately before, or immediately after the heater 41 is turned off. Is resumed into the tank body 200 (FIG. 10). The supply of the inert gas IG into the tank body 200 is continued until the temperature of the catalyst carrying substrate 4 returns to room temperature (S18). This prevents impurities other than carbon and amorphous carbon from being generated in the process of lowering the temperature of the catalyst 3. Further, the organic gas is aggregated by cooling the organic gas in the reaction space as the gas phase space when the heater is stopped, and the nanocarbon material N generated by the organic liquid 6 entering the reaction space can be prevented from peeling off from the substrate. . Then, the lid member 33 is operated while the inert gas IG is introduced into the tank body 200 to pull out the tank body 200 from the organic liquid 6 and collect the nanocarbon material (S19) and (S20). In this manner, the organic liquid evaporates while keeping the catalyst 3 and the organic liquid 6 in non-contact by exchanging the evaporated gas VG of the organic liquid 6 from the lower surface opening 200A of the tank body 200 and the inert gas IG supplied from the outside. The process of saturating the gas VG in the reaction space and synthesizing the nanocarbon material N under the synthesis temperature condition of the catalyst-carrying substrate 4, and before and after the catalyst-carrying substrate 4 reaches the synthesis temperature And a step of supplying an inert gas from the outside into the tank at the time of non-heating and cooling after the stop.
上述したように、本実施形態のナノカーボン材料の製造方法によれば、炭素源としての有機液体中に、反応空間内に触媒を曝して担持した基板と協働する槽体を浸漬させ、その状態で触媒担持基板を加熱する。ナノカーボン材料の合成温度で合成中は浸漬液体の蒸発ガスを反応空間に飽和させるとともに、合成温度以下の時間帯には不活性ガスを反応空間内に満たして特定温度域で炭素源ガスのみを触媒に接触させて合成する。これによって、基板の温度昇降変化により生成されやすい不純物を含まない良好な品質のナノカーボン材料を合成することができるばかりでなく、反応空間にはキャリアガスなどを含まないから温度や気体濃度あるいは密度等と関連する単層、複層のチューブ合成の制御パラメータ設定等が簡単となる。また、真空装置や開放型でのキャリアガスの注入排気制御が不要で、かつ、槽体自体の構成が簡単であり装置全体の小型化、装置コストの低コスト化を図れる。のみならず、成長したナノカーボン材料を液体に接触させることで流されて触媒からナノカーボン材料が離脱することが防止されるので、基体への触媒固定方法を限定させる必要がなく、よって触媒選択の自由度が高い。つまり、例えば触媒としての金属塩をゼオライト等に担持させた溶剤を作製し、基板への塗布処理、乾燥により基板へ固定したものでも適用可能である。また、化学気相合成法で単層・二層カーボンナノチューブの効率的な触媒として用いられる有機金属膜なども使用することができる。有機金属触媒として、例えば金属カルボニル、カルベン錯体、フェロセンを含むメタロセン等が挙げられる。また、ケイ素、ヒ素、ホウ素等の半金属化合物などを用いることができる。また、ディップコーティングやスピンコーティング、滴下などで簡単に良好な精度の膜厚制御が可能であり、これによって、単層、二層カーボンナノチューブ合成を簡易に実現できる。 As described above, according to the method for producing a nanocarbon material of the present embodiment, the tank body cooperating with the substrate supported by exposing the catalyst in the reaction space is immersed in the organic liquid as the carbon source, The catalyst-carrying substrate is heated in the state. During the synthesis at the synthesis temperature of the nanocarbon material, the evaporating gas of the immersion liquid is saturated in the reaction space, and in the time zone below the synthesis temperature, the reaction space is filled with an inert gas and only the carbon source gas is filled in a specific temperature range. Synthesize by contacting with catalyst. This makes it possible not only to synthesize good quality nanocarbon materials that do not contain impurities that are likely to be generated due to changes in temperature of the substrate, but also because the reaction space does not contain carrier gas, etc. It is easy to set control parameters for single-layer and multi-layer tube synthesis. In addition, it is not necessary to control the injection and exhaust of the carrier gas in a vacuum apparatus or an open type, and the structure of the tank body itself is simple, so that the entire apparatus can be downsized and the apparatus cost can be reduced. Not only does it prevent the nanocarbon material from flowing away from the catalyst by contacting the grown nanocarbon material with the liquid, so there is no need to limit the method of fixing the catalyst to the substrate. High degree of freedom. That is, for example, a solvent in which a metal salt as a catalyst is supported on zeolite or the like, and fixed to the substrate by applying treatment to the substrate and drying can be applied. In addition, an organic metal film that is used as an efficient catalyst for single- and double-walled carbon nanotubes by chemical vapor synthesis can also be used. Examples of the organometallic catalyst include metal carbonyl, carbene complex, metallocene including ferrocene, and the like. In addition, metalloid compounds such as silicon, arsenic, and boron can be used. In addition, it is possible to easily control the film thickness with good accuracy by dip coating, spin coating, dripping, etc., and this makes it possible to easily synthesize single-walled and double-walled carbon nanotubes.
また、本実施形態においても、槽体2内に投入された有機液体6の液面面積F全体がそのまま槽体の内法サイズとなっているので、有機液体の蒸発時の蒸発ガスがすべて反応空間に供給され常時高濃度の炭素源ガス雰囲気を維持しつづけることができる。 Also in this embodiment, since the entire liquid surface area F of the organic liquid 6 charged into the tank body 2 is the internal size of the tank body as it is, all of the evaporated gas at the time of evaporation of the organic liquid reacts. It is possible to continue to maintain a high concentration carbon source gas atmosphere supplied to the space.
上記した第2実施形態の構成は限定的なものではない。例えば図12のように、触媒3を担持した触媒担持基板4は天壁201e側に配置されて天壁と兼用され、さらに、その基板4にヒータ5aが密接配置されるようにしてもよい。また、図13のように、下面開口200Aの中央部にヒータ5a、触媒担持基板4を設置し、基板4の両側の隙間から有機液体を蒸発ガスとして導入させることもできる。また、槽体200は円筒形、楕円筒形、多角筒形等の構造としてもよい。 The configuration of the second embodiment described above is not limited. For example, as shown in FIG. 12, the catalyst-carrying substrate 4 carrying the catalyst 3 may be arranged on the top wall 201e side and also used as the top wall, and the heater 5a may be closely arranged on the substrate 4. In addition, as shown in FIG. 13, the heater 5 a and the catalyst carrying substrate 4 can be installed at the center of the lower surface opening 200 </ b> A, and the organic liquid can be introduced as an evaporating gas from the gaps on both sides of the substrate 4. The tank body 200 may have a cylindrical shape, an elliptical cylindrical shape, a polygonal cylindrical shape, or the like.
本願発明者は、本発明の装置を用いてナノカーボン材料を製造し得ることを検証するために、下記の実験を行った。 In order to verify that the nanocarbon material can be produced using the apparatus of the present invention, the present inventor conducted the following experiment.
<有機溶液>図4の装置の液槽内に炭素源有機液体として高純度エタノール(99.5%)を容器容積の80%程度収容した。
<基板>Si(100)面方位、寸法9×15×0.5mm3のシリコン基板を用いてカーボンナノチューブの合成試験を行なった。基板はあらかじめアセトン中で超音波洗浄し、さらに大気中1000℃で一時間、酸化処理を行い基板表面にSiO2膜を形成させた。
<触媒の調製>
(1)エタノール4mlに触媒原料となる酢酸鉄と酢酸コバルトを溶かした溶液に、ゼオライト(超安定化Y型、平均細孔直径0.74nm)0.1gを超音波分散させた。金属重量比はゼオライトに対してそれぞれ2.5wt%とした。
(2)80℃でエタノールを蒸発させて乾燥させた。
(3)得られた乾燥粉末をエタノール溶液4mlに再度超音波分散させた。
(4)80℃でエタノールを蒸発させ、ゼオライトへ触媒原料を担持させた。
(5)酢酸鉄担持ゼオライトを0.7wt%の割合でエタノール中に分散させ触媒原料担体分散液とした。
(6)100℃に加熱したSi基板上に触媒原料担体分散液を滴下して触媒原料担体塗付膜を形成した。
<合成>(6)で触媒原料担体を塗付したSi基板を槽体200にセットし、槽体200内に窒素(N2)ガスを導入しながら槽体200をエタノール中に沈降配置させた。そして、基板表面温度を放射温度計で外部から計測しながら基板背後のカーボンヒータ5aに直流電流を流し、基板を加熱した。そして、基板表面温度を700℃から1100℃まで50℃刻みで合成温度条件を変えてそれぞれ合成実験を行った。設定した合成温度への昇温途中も槽体200内に窒素(N2)ガスを導入し続け、基板表面温度が設定した合成温度に達した時点で窒素ガス導入を停止し、窒素ガスと置換して反応空間に飽和したエタノール蒸発ガスと触媒とを反応させて10分間カーボンナノチューブを成長させた。窒素ガス導入を停止し、エタノール蒸発ガスが反応空間に進入して窒素ガスと置換する際に、気相の反応空間から窒素ガスやエタノールガス、反応による生成ガスが泡となって槽体200内から排出されるのが観察された(図9参照)。窒素ガス導入停止から10分後に窒素ガス導入を再開し、同時にヒータへの通電を停止した。そして、基板温度が室温に戻ってから基板上に堆積したカーボンナノチューブとともに、槽体200をエタノール中から取り出した。<Organic Solution> High purity ethanol (99.5%) as a carbon source organic liquid was accommodated in the liquid tank of the apparatus of FIG.
<Substrate> A carbon nanotube synthesis test was performed using a silicon substrate having a Si (100) plane orientation and a size of 9 × 15 × 0.5 mm 3 . The substrate was ultrasonically cleaned in advance in acetone, and further oxidized in the atmosphere at 1000 ° C. for 1 hour to form a SiO 2 film on the substrate surface.
<Preparation of catalyst>
(1) 0.1 g of zeolite (ultra-stabilized Y-type, average pore diameter 0.74 nm) was ultrasonically dispersed in a solution of iron acetate and cobalt acetate as catalyst raw materials dissolved in 4 ml of ethanol. The metal weight ratio was 2.5 wt% with respect to the zeolite.
(2) Ethanol was evaporated and dried at 80 ° C.
(3) The obtained dry powder was ultrasonically dispersed again in 4 ml of ethanol solution.
(4) Ethanol was evaporated at 80 ° C., and the catalyst raw material was supported on the zeolite.
(5) An iron acetate-carrying zeolite was dispersed in ethanol at a ratio of 0.7 wt% to obtain a catalyst raw material carrier dispersion.
(6) A catalyst raw material carrier dispersion was dropped onto a Si substrate heated to 100 ° C. to form a catalyst raw material carrier coating film.
<Synthesis> The Si substrate coated with the catalyst raw material support in (6) was set in the tank body 200, and the tank body 200 was placed in ethanol while being introduced into the tank body 200 while introducing nitrogen (N 2 ) gas. . Then, while measuring the substrate surface temperature from the outside with a radiation thermometer, a direct current was passed through the carbon heater 5a behind the substrate to heat the substrate. The substrate surface temperature was changed from 700 ° C. to 1100 ° C. in increments of 50 ° C., and the synthesis temperature conditions were changed to perform synthesis experiments. During the temperature rising to the set synthesis temperature, nitrogen (N 2 ) gas is continuously introduced into the tank body 200. When the substrate surface temperature reaches the set synthesis temperature, the nitrogen gas introduction is stopped and replaced with nitrogen gas. Then, the ethanol evaporation gas saturated in the reaction space and the catalyst were reacted to grow carbon nanotubes for 10 minutes. When the introduction of nitrogen gas is stopped and the ethanol evaporating gas enters the reaction space and is replaced with nitrogen gas, nitrogen gas, ethanol gas, and gas generated by the reaction form bubbles in the tank body 200 from the gas phase reaction space. Was observed (see FIG. 9). Nitrogen gas introduction was restarted 10 minutes after the nitrogen gas introduction stop, and at the same time, the energization of the heater was stopped. And the tank body 200 was taken out from ethanol together with the carbon nanotubes deposited on the substrate after the substrate temperature returned to room temperature.
図14、図15、図16は、上記実施例1の実験により同じ基板に成長したカーボンナノチューブの走査型電子顕微鏡(SEM:Scanning Electron
Microscope、SEM)画像で図14が二層のカーボンナノチューブ、図15、図16が単層のカーボンナノチューブを示す。図14の二層カーボンナノチューブでは、チューブが入れ子状に配置され間隔の狭い筋が見られる。図15より、側面が濃い二本線で直径が1.0[nm]程度でバンドル状の何本かの束となった単層カーボンナノチューブが確認される。また、図16では、結晶性の高い1本の単層カーボンナノチューブが確認される。14, 15, and 16 show scanning electron microscopes (SEM) of carbon nanotubes grown on the same substrate in the experiment of Example 1 above.
In a microscope (SEM) image, FIG. 14 shows a double-walled carbon nanotube, and FIGS. 15 and 16 show a single-walled carbon nanotube. In the double-walled carbon nanotube of FIG. 14, the tubes are arranged in a nested manner, and narrow stripes are seen. From FIG. 15, single-walled carbon nanotubes that are bundles of several bundles with a diameter of about 1.0 [nm] on a double line with dark side surfaces are confirmed. Moreover, in FIG. 16, one single-walled carbon nanotube with high crystallinity is confirmed.
図17(a),(b)は、実施例1の実験の結果合成されたカーボンナノチューブで合成温度が850℃の場合と、900℃の場合でのラマン分光スペクトルを示す。計測は、レーザ波長532[nm]で行なった。(a)の合成温度が850℃及び(b)の合成温度が900℃のいずれの場合においても、232cm−1でピーク(RBM:radial breathing mode)が観察され、単層カーボンナノチューブの合成が確認される。(b)の合成温度900℃のほうがシグナルが強く出ており、より多くのカーボンナノチューブが生成していることが分かる。また、このときのカーボンナノチューブの直径は、248/(RBMのラマンシフト(cm−1))より、248/232=1.07nmとされる。FIGS. 17A and 17B show Raman spectroscopy spectra of the carbon nanotubes synthesized as a result of the experiment of Example 1 when the synthesis temperature is 850 ° C. and 900 ° C. FIG. The measurement was performed at a laser wavelength of 532 [nm]. A peak (RBM: radial breathing mode) was observed at 232 cm −1 in both cases where the synthesis temperature of (a) was 850 ° C. and the synthesis temperature of (b) was 900 ° C., confirming the synthesis of single-walled carbon nanotubes. Is done. The signal is stronger at the synthesis temperature of 900 ° C. in (b), indicating that more carbon nanotubes are generated. Further, the diameter of the carbon nanotube at this time is 248/232 = 1.07 nm from 248 / (Raman Raman shift (cm −1 )).
図4の装置を用いて行なった実施例1の実験で同じ触媒にカーボンナノチューブとともに、カーボンナノウォール及びカーボンナノリボン(グラフェン)の生成を確認した。走査型電子顕微鏡写真画像の図18中、糸くずのように見えているのがカーボンナノウォールCW、塊ZLがゼオライト、ゼオライトのしまの橋渡しをしている紐状に見えるものがカーボンナノリボン(グラフェン)CRである。図19は、図18の拡大画像である。 In the experiment of Example 1 performed using the apparatus of FIG. 4, the formation of carbon nanowalls and carbon nanoribbons (graphene) was confirmed together with carbon nanotubes on the same catalyst. In FIG. 18 of the scanning electron micrograph image, the carbon nanowall CW is seen as lint, the mass ZL is zeolite, and the carbon nanoribbon (graphene) is seen as a string that bridges the zeolite. ) CR. FIG. 19 is an enlarged image of FIG.
本発明のナノカーボン材料の製造装置並びにその方法により得られるナノカーボン材料は、エレクトロニクス分野、ナノテクノロジー分野、環境、エネルギー分野、各種複合材料分野において利用可能である。例えば、エレクトロニクス分野においては、電界効果トランジスタその他の電子素子、ナノ配線、フラットパネルディスプレイ(電界放出型電子源)、透明電極などにおいて適用できる。ナノテクノロジー分野では、ナノピンセット、走査型プローブ顕微鏡探針、ナノ試験管などでの利用が見込める。また、環境、エネルギー分野では、ガスセンサ、水素吸蔵材料、リチウム電池、太陽電池などでの応用が期待できる。さらに、医療分野においては、薬の体内輸送・放出に用いるナノカプセルや注射針などの応用が考えられる。 The nanocarbon material production apparatus and the nanocarbon material obtained by the method of the present invention can be used in the fields of electronics, nanotechnology, environment, energy, and various composite materials. For example, in the electronics field, the present invention can be applied to field effect transistors and other electronic devices, nanowiring, flat panel displays (field emission electron sources), transparent electrodes, and the like. In the nanotechnology field, it can be used in nano tweezers, scanning probe microscope probes, nano test tubes, and so on. In the environment and energy fields, applications in gas sensors, hydrogen storage materials, lithium batteries, solar cells, etc. can be expected. Further, in the medical field, applications such as nanocapsules and injection needles used for in-vivo transport / release of drugs are conceivable.
1、30 ナノカーボン材料の製造装置
2、200 槽体
2a 閉鎖空間
2b 反応空間
3 触媒
4 触媒担持基板
5 加熱装置
6 有機液体
7 不活性ガス供給装置
8 境界部
9 連通部
10 冷却装置
16 有機液体供給装置
21a〜21d、201a〜201d 四周壁
31 液槽
33 蓋部材
IG 不活性ガス
VG 蒸発ガス
F 槽璧で囲まれた面
N ナノカーボン材料DESCRIPTION OF SYMBOLS 1,30 Nanocarbon material manufacturing apparatus 2,200 Tank 2a Closed space 2b Reaction space 3 Catalyst 4 Catalyst support substrate 5 Heating device 6 Organic liquid 7 Inert gas supply device 8 Boundary portion 9 Communication portion 10 Cooling device 16 Organic liquid Supply devices 21a to 21d, 201a to 201d Quadrilateral wall 31 Liquid tank 33 Lid member IG Inert gas VG Evaporative gas F Surface N surrounded by tank wall Nanocarbon material
Claims (5)
閉鎖空間内に配置した触媒担持基板であって、担持した触媒を槽体の閉鎖空間に曝し、かつ触媒を有機液体に直接に接触させない位置に配置した触媒担持基板と、
触媒担持基板の加熱装置と、
槽体の連通部において槽体の閉鎖空間と接するように配置された有機液体と、
触媒担持基板の加熱による有機液体の蒸発時にその蒸発ガスと置換される不活性ガスであり、槽体の閉鎖空間に該不活性ガスを供給する不活性ガス供給装置と、を有し、
槽体の閉鎖空間が反応空間とされ、槽体の槽璧で囲まれた面全体が反応空間と有機液体との境界部となるように有機液体と槽体との連通部が形成されていることを特徴とするナノカーボン材料の製造装置。A tank body having a communication space with the organic liquid and forming a closed space inside;
A catalyst-carrying substrate disposed in a closed space, the catalyst-carrying substrate disposed in a position where the supported catalyst is exposed to the closed space of the tank body and the catalyst is not in direct contact with the organic liquid;
A heating device for the catalyst-carrying substrate;
An organic liquid disposed so as to be in contact with the closed space of the tank body at the communicating portion of the tank body;
An inert gas supply device that is an inert gas that is substituted for the evaporated gas when the organic liquid is evaporated by heating the catalyst-carrying substrate, and that supplies the inert gas to the closed space of the tank body,
The communication space between the organic liquid and the tank body is formed so that the closed space of the tank body is a reaction space and the entire surface surrounded by the tank wall of the tank body is the boundary between the reaction space and the organic liquid. An apparatus for producing a nanocarbon material characterized by the above.
槽体は下面開口を連通部とする反転ケース体からなり、有機液体中に浸漬された状態で内部を閉鎖空間とし、支持機構を介して液槽内の有機液体に対して浸漬、引き揚げ可能に設けられ、
さらに、槽体は、同槽体を液槽内の有機液体へ浸漬操作するとき、又は触媒担持基板を合成温度に向けて加熱昇温するとき、を含む非合成時には槽体内に不活性ガスを供給して閉鎖空間を不活性ガスによる高濃度状態とする態様と、
有機液体中での触媒担持基板の加熱によるナノカーボン材料の合成中には不活性ガスの供給を停止し有機液体の蒸発ガスで置換して閉鎖空間内を有機液体の蒸発ガスによる高濃度状態とする態様と、を有することを特徴とする請求項1記載のナノカーボン材料の製造装置。It has a liquid tank that contains the organic liquid and can immerse the entire tank body in the organic liquid,
The tank body consists of a reversing case body with the opening at the bottom as a communication part. The inside of the tank body is a closed space when immersed in an organic liquid, and can be immersed in and lifted from the organic liquid in the liquid tank via a support mechanism. Provided,
Further, when the tank body is immersed in the organic liquid in the liquid tank, or when the catalyst-carrying substrate is heated to the synthesis temperature, the inert gas is introduced into the tank body during non-synthesis. A mode in which the closed space is supplied to a high concentration state by an inert gas,
During the synthesis of the nanocarbon material by heating the catalyst-carrying substrate in the organic liquid, the supply of the inert gas is stopped and replaced with the evaporative gas of the organic liquid, and the enclosed space is brought into a high concentration state by the evaporative gas of the organic liquid The apparatus for producing a nanocarbon material according to claim 1, further comprising:
触媒を有機液体に直接に接触させない位置で、かつ触媒を槽体の反応空間に曝した状態で触媒担持基板を配置し、
触媒担持基板が合成温度に加熱されるとき以外は、反応空間内に不活性ガスを供給し、触媒担持基板が合成温度に加熱された場合に有機液体の蒸発ガスと置換して槽体の槽壁で囲まれた面全体で有機液体蒸発ガスを供給しつつ触媒上にナノカーボン材料を合成することを特徴とするナノカーボン材料の製造方法。Place the organic liquid facing the reaction space in the tank body so that the entire surface surrounded by the tank wall of the tank body forms a boundary between the organic liquid and the reaction space,
Place the catalyst-carrying substrate in a position where the catalyst is not in direct contact with the organic liquid and with the catalyst exposed to the reaction space of the tank body,
A tank of a tank body that supplies an inert gas into the reaction space except when the catalyst-carrying substrate is heated to the synthesis temperature, and replaces the organic liquid evaporative gas when the catalyst-carrying substrate is heated to the synthesis temperature. A method for producing a nanocarbon material, comprising synthesizing a nanocarbon material on a catalyst while supplying an organic liquid evaporating gas over the entire surface surrounded by a wall.
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